Display device and electronic device including display device

Abstract

According to embodiments of this disclosure, a display device and an electronic device including the display device are provided. The display device includes: a light-emitting element disposed on a base layer and including an anode electrode, a cathode electrode, and a light-emitting structure electrically connected to the anode electrode and the cathode electrode; a pixel defining layer covering a portion of the anode electrode; a sidewall disposed on the pixel defining layer and including a first sidewall and a second sidewall on the first sidewall; a conductive sidewall portion, at least a portion of which is disposed on a side surface of the first sidewall and exposes the anode electrode; and a transparent conductive layer disposed on the cathode electrode and the conductive sidewall portion, and made of a transparent conductive material.

Description

Technical Field

[0001] This disclosure relates to a display device, a method of manufacturing the display device, and an electronic device including the display device. Background Technology

[0002] Recently, with increasing attention to information display, research and development of display devices is ongoing.

[0003] The display device may include light-emitting elements and may include multiple layers forming a conductive structure and arranged adjacent to each other.

[0004] Multiple layers need to be closely adjacent to each other. If some of the layers are not closely adjacent, there is a risk of warping and other risks, as well as the risk that impurities such as moisture may not be properly blocked. Utility Model Content

[0005] Technical issues

[0006] One aspect of this disclosure provides a display device in which a light-emitting element or the like is tightly encapsulated to prevent the penetration of impurities such as moisture, a method for manufacturing the display device, and an electronic device including the display device.

[0007] One aspect of this disclosure provides a display device capable of stably forming an electrical path for a signal applied to a light-emitting element, a method for manufacturing the display device, and an electronic device including the display device.

[0008] One aspect of this disclosure provides a display device, a method for manufacturing the display device, and an electronic device including the display device, which enables adjacent layers to be closely adjacent to each other by excellently setting the adhesive force between the light-emitting element and the adjacent layer.

[0009] Technical solution

[0010] According to embodiments of this disclosure, a display device may include: a light-emitting element disposed on a base layer and including an anode electrode, a cathode electrode, and a light-emitting structure electrically connected to the anode electrode and the cathode electrode; a pixel defining layer covering a portion of the anode electrode; a sidewall disposed on the pixel defining layer and including a first sidewall and a second sidewall on the first sidewall; a conductive sidewall portion, at least a portion of which is disposed on a side surface of the first sidewall and exposes the anode electrode; and a transparent conductive layer disposed on the cathode electrode and the conductive sidewall portion, and made of a transparent conductive material.

[0011] According to an embodiment, the second sidewall may have a width greater than that of the first sidewall.

[0012] According to an embodiment, the conductive sidewall portion can completely cover the side surface of the first sidewall and has a thickness thinner than that of the second sidewall.

[0013] According to an embodiment, when viewed in a plane, the conductive sidewall portion and the second sidewall may have ends that overlap each other.

[0014] According to an embodiment, the cathode electrode may not expose the conductive sidewall portion on the first sidewall.

[0015] According to an embodiment, the cathode electrode may partially expose the conductive sidewall portion on the first sidewall.

[0016] According to an embodiment, the transparent conductive layer can completely cover the conductive sidewall portion and the cathode electrode.

[0017] According to an embodiment, the cathode electrode can be electrically connected to the first sidewall.

[0018] According to an embodiment, the first sidewall may have a higher conductivity than the second sidewall.

[0019] According to an embodiment, the conductive sidewall portion and the second sidewall may be made of the same conductive material.

[0020] According to an embodiment, the first sidewall may be made of aluminum (Al). The second sidewall may be made of titanium (Ti). The conductive sidewall portion may be made of one of titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum alloys. The cathode electrode may be made of silver (Ag). The transparent conductive layer may be made of one of indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (IO), tin oxide (TO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), aluminum tin oxide (ATO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (SnO2).

[0021] According to an embodiment, the display device may include: a first sub-pixel region providing light of a first color; a second sub-pixel region providing light of a second color; and a third sub-pixel region providing light of a third color. The light-emitting element may include a first light-emitting element in the first sub-pixel region, a second light-emitting element in the second sub-pixel region, and a third light-emitting element in the third sub-pixel region.

[0022] A method for manufacturing a display device according to an embodiment of the present disclosure may include the following steps: patterning an anode electrode on a base layer; patterning a sidewall including a first sidewall and a second sidewall on the first sidewall on the base layer; patterning a conductive sidewall portion covering the side surface of the first sidewall; patterning a light-emitting structure on the anode electrode; patterning a cathode electrode covering the conductive sidewall portion and electrically connected to the light-emitting structure; and patterning a transparent conductive layer covering the cathode electrode.

[0023] According to an embodiment, the step of patterning the conductive sidewall portion may include the following steps: forming a basic conductive sidewall portion covering the anode electrode and the first sidewall based on a sputtering process; and performing a full-surface etching process on the basic conductive sidewall portion and the second sidewall to provide the conductive sidewall portion.

[0024] According to an embodiment, the full-surface etching process can be an anisotropic dry etching process.

[0025] According to an embodiment, the step of patterning the cathode electrode may include forming an electrode layer based on a sputtering process. The step of patterning the transparent conductive layer may include patterning the conductive layer based on a sputtering process.

[0026] According to an embodiment, the step of patterning the conductive sidewall portion may include the step of the conductive sidewall portion entirely covering the side surface of the first sidewall. The step of patterning the transparent conductive layer may include the step of the transparent conductive layer entirely covering the cathode electrode.

[0027] According to an embodiment, the first sidewall may comprise aluminum (Al). The second sidewall may comprise titanium (Ti). The conductive sidewall portion may comprise one or more of titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum alloys. The cathode electrode may comprise silver (Ag). The transparent conductive layer may comprise one or more of indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (IO), tin oxide (TO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), aluminum tin oxide (ATO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (SnO2).

[0028] According to an embodiment, the manufacturing method may further include the step of patterning a pixel definition layer that partially covers the anode electrode on the base layer before patterning the sidewalls. The step of patterning the pixel definition layer may include the step of exposing the anode electrode.

[0029] According to an embodiment, the manufacturing method may further include the following steps: forming a base pixel definition layer that partially covers the anode electrode on the base layer before patterning the sidewall; and patterning a pixel definition layer that exposes the anode electrode by etching the base pixel definition layer after patterning the conductive sidewall portion.

[0030] According to embodiments of this disclosure, an electronic device may include: a processor; a display device capable of outputting image information; and a power module capable of supplying power to the display device. The display device may include: a light-emitting element disposed on a base layer and including an anode electrode, a cathode electrode, and a light-emitting structure electrically connected to the anode electrode and the cathode electrode; a pixel-defining layer covering a portion of the anode electrode; a sidewall disposed on the pixel-defining layer and including a first sidewall and a second sidewall on the first sidewall; a conductive sidewall portion, at least a portion of which is disposed on a side surface of the first sidewall and exposes the anode electrode; and a transparent conductive layer disposed on the cathode electrode and the conductive sidewall portion, and made of a transparent conductive material.

[0031] Technical effect

[0032] According to embodiments of this disclosure, a display device in which a light-emitting element or the like is tightly encapsulated to prevent the penetration of impurities such as moisture, a method for manufacturing the display device, and an electronic device including the display device can be provided.

[0033] According to embodiments of the present disclosure, a display device capable of stably forming an electrical path for a signal applied to a light-emitting element, a method for manufacturing the display device, and an electronic device including the display device can be provided.

[0034] According to embodiments of the present disclosure, a display device, a method of manufacturing the display device, and an electronic device including the display device can be provided, which enables adjacent layers to be closely adjacent to each other by excellently setting the adhesive force between the light-emitting element and the adjacent layer. Attached Figure Description

[0035] Figure 1 This is a schematic plan view illustrating a display device according to an embodiment.

[0036] Figure 2 and Figure 4 This is a schematic cross-sectional view illustrating a display device according to an embodiment.

[0037] Figure 3 yes Figure 2 A schematic enlarged view of the EA1 region.

[0038] Figure 5 yes Figure 4 A schematic enlarged view of the EA2 region.

[0039] Figure 6 This is a schematic cross-sectional view showing a light-emitting element according to an embodiment.

[0040] Figures 7 to 16 This is a schematic cross-sectional view illustrating a method for manufacturing a display device according to an embodiment, step by step.

[0041] Figure 17 This is a block diagram of an electronic device according to an embodiment.

[0042] Figure 18 This is a schematic diagram of an electronic device according to various embodiments.

[0043] Explanation of reference numerals in the attached figures

[0044] DD: Display device

[0045] BSL: Basic Layer

[0046] DA: Display Area

[0047] NDA: Non-display area

[0048] PXL: Pixels

[0049] SPX: Subpixel

[0050] SPXA: Subpixel region

[0051] PCL: Pixel Circuit Layer

[0052] LEL: Light-emitting element layer

[0053] UL: Upper layer

[0054] PXC: Pixel Circuit

[0055] VIAL: Through-hole layer

[0056] LD: Light-emitting element

[0057] AE: Anode electrode

[0058] EMS: Light-emitting structure

[0059] CE: Cathode electrode

[0060] PDL: Pixel Definition Layer

[0061] SW: Sidewall

[0062] TCL: Transparent conductive layer

[0063] PAT: Conductive sidewall portion

[0064] TFE: Encapsulation layer Detailed Implementation

[0065] This disclosure can be modified in many ways and can take many forms, as will be illustrated by way of example in the accompanying drawings and specific embodiments will be described in detail herein. However, this is not intended to limit this disclosure to a particular form, and it should be understood to include all modifications, equivalents, and even substitutions that fall within the concept and scope of this disclosure.

[0066] The terms "first," "second," etc., can be used to describe multiple constituent elements, but the constituent elements are not limited by the terms. The terms are used only to distinguish one constituent element from another. For example, without departing from the scope of the claims of this disclosure, a first constituent element may be named a second constituent element, and similarly, a second constituent element may be named a first constituent element. Unless the context clearly indicates otherwise, singular expressions include plural expressions.

[0067] In this disclosure, terms such as "comprising" or "having" are used to specify the presence of features, figures, steps, operations, constituent elements, components, or combinations thereof described in the specification, and should be understood as not precluding the presence or additional possibility of one or more other features or figures, steps, operations, constituent elements, components, or combinations thereof. Furthermore, when referring to a layer, film, region, plate, or other portion as being "on" another portion, this includes not only the case where it is "immediately above" the other portion, but also the case where other portions exist in between. Additionally, in this specification, when referring to a layer, film, region, plate, or other portion being formed on another portion, the direction of formation is not limited to the upper direction, but also includes the case where it is formed on a side surface or in a lower direction. Conversely, when referring to a layer, film, region, plate, or other portion being located "below" another portion, this includes not only the case where it is "immediately below" the other portion, but also the case where other portions exist in between.

[0068] This disclosure relates to a display device, a method of manufacturing a display device, and an electronic device including a display device. Hereinafter, a display device, a method of manufacturing a display device, and an electronic device including a display device according to embodiments will be described with reference to the accompanying drawings.

[0069] Figure 1 This is a schematic plan view illustrating a display device according to an embodiment.

[0070] Reference Figure 1 The display device DD may include a base layer BSL and pixels PXL disposed on the base layer BSL. The display device DD may also include driving circuitry (e.g., a scan driving section and a data driving section) for driving the pixels PXL, wiring, and pads.

[0071] The display device DD (or base layer BSL) may include a display area DA and a non-display area NDA. The non-display area NDA may refer to the area outside the display area DA. The non-display area NDA may surround at least a portion of the display area DA.

[0072] The base layer (BSL) can form the substrate surface of the display device (DD). According to an embodiment, the base layer (BSL) can be a lower substrate for arranging layers forming the display device (DD). The base layer (BSL) can be a rigid or flexible substrate or film. For example, the base layer (BSL) can contain a glass material. Alternatively, the base layer (BSL) can contain a silicon material. Alternatively, the base layer (BSL) can contain polyimide. However, this disclosure is not limited thereto.

[0073] The plane defined in this specification is the direction extending along the first direction DR1 and the second direction DR2, and is defined with reference to the plane on which the base layer BSL is disposed. According to an embodiment, the third direction DR3 may be the thickness direction of the base layer BSL, and the third direction DR3 may also be the direction in which the display device DD emits light.

[0074] The display area DA can refer to the area where pixels PXL are arranged. The non-display area NDA can refer to the area where pixels PXL are not arranged. In the non-display area NDA, drive circuitry, wiring, and pads that are connected to the pixels PXL of the display area DA can be arranged.

[0075] According to an embodiment, pixel PXL (or sub-pixel SPX) can be configured according to stripe or pentilet. ® Arrangement can be achieved through various methods such as arrangement and structure, but is not limited to these. Various implementation forms can be applied in this disclosure.

[0076] According to an embodiment, a pixel PXL (or sub-pixel SPX) may include a first sub-pixel SPX1, a second sub-pixel SPX2, and a third sub-pixel SPX3. The first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 may each be a sub-pixel. At least one first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 may form a pixel unit capable of emitting multiple colors of light.

[0077] The first sub-pixel SPX1, the second sub-pixel SPX2, and the third sub-pixel SPX3 can each emit a different color of light.

[0078] For example, the first sub-pixel SPX1 could be a red pixel emitting red light (as an example, the first color), the second sub-pixel SPX2 could be a green pixel emitting green light (as an example, the second color), and the third sub-pixel SPX3 could be a blue pixel emitting blue light (as an example, the third color). The red pixel can provide light in the wavelength range of 600nm to 750nm. The green pixel can provide light in the wavelength range of 480nm to 560nm. The blue pixel can provide light in the wavelength range of 370nm to 460nm.

[0079] According to an embodiment, the number of second sub-pixels SPX2 can be greater than the number of first sub-pixels SPX1 and the number of third sub-pixels SPX3. However, the color, type, and / or number of the first sub-pixels SPX1, second sub-pixels SPX2, and third sub-pixels SPX3 forming each pixel unit are not limited to a specific example.

[0080] Reference Figures 2 to 6 The display device DD according to the embodiment will be described.

[0081] Figure 2 and Figure 4 This is a schematic cross-sectional view illustrating a display device according to an embodiment. Figure 3 yes Figure 2 A schematic enlarged view of the EA1 region. Figure 5 yes Figure 4 A schematic enlarged view of the EA2 region. Figure 2 and Figure 3 A display device DD according to the first embodiment is shown. Figure 4 and Figure 5 A display device DD according to a second embodiment is shown. (Combined with...) Figure 3 It can be clearly understood Figure 2 The detailed structure. Combined with... Figure 5 It can be clearly understood Figure 4 The detailed structure. Figure 6 This is a schematic cross-sectional view showing a light-emitting element according to an embodiment.

[0082] Reference Figures 2 to 6 According to the embodiment, the display device DD may include a pixel circuit layer PCL, a light-emitting element layer LEL on the pixel circuit layer PCL, and an upper layer UL on the light-emitting element layer LEL, and may include a sub-pixel SPX corresponding to the sub-pixel region SPXA.

[0083] According to an embodiment, sub-pixels SPX can form sub-pixel regions SPXA. Sub-pixel regions SPXA can be regions where light of a certain color is perceived. For example, sub-pixel regions SPXA may include: a first sub-pixel region SPXA1, formed by the first sub-pixel SPX1 and providing light of the first color; a second sub-pixel region SPXA2, formed by the second sub-pixel SPX2 and providing light of the second color; and a third sub-pixel region SPXA3, formed by the third sub-pixel SPX3 and providing light of the third color.

[0084] The pixel circuit layer (PCL) may include a base layer (BSL), pixel circuits (PXC), and a via layer (VIAL). According to an embodiment, the pixel circuit layer (PCL) may be referred to as a backplane layer.

[0085] The base layer (BSL) can form a substrate for arranging pixel circuits (PXCs) configured to drive light-emitting elements (LDs). According to an embodiment, the light-emitting element (LD) can be an organic light-emitting diode (OLED).

[0086] Pixel circuits (PXCs) can be disposed on the base layer (BSL) and can be configured to drive light-emitting elements (LDs). The pixel circuit layer (PCL) may include a conductive layer and an insulating layer, with the conductive layer forming the pixel circuits (PXCs). Pixel circuits (PXCs) may be included in corresponding sub-pixels (SPXs). For example, pixel circuits (PXCs) may include a first pixel circuit (PXC1) in a first sub-pixel region (SPXA1), a second pixel circuit (PXC2) in a second sub-pixel region (SPXA2), and a third pixel circuit (PXC3) in a third sub-pixel region (SPXA3).

[0087] A via layer (VIAL) can be formed on top of the pixel circuit layer (PCL) and can cover the pixel circuit (PXC). The via layer (VIAL) can be a planarization layer and can be a layer with contacts (not shown) forming an electrical connection between the pixel circuit (PXC) and the anode electrode (AE). The via layer (VIAL) can contain various organic materials. However, this disclosure is not limited thereto.

[0088] The light-emitting element layer (LEL) can be disposed on the pixel circuit layer (PCL). The LEL may include an anode electrode (AE), a pixel definition layer (PDL), sidewalls (SW), conductive sidewall portions (PAT), a light-emitting structure (EMS), a cathode electrode (CE), a transparent conductive layer (TCL), and an encapsulation layer (TFE).

[0089] The anode electrode AE ​​can be disposed on the pixel circuit layer PCL (e.g., via layer VIAL). The anode electrode AE ​​can be electrically connected to the pixel circuit PXC through a contact portion (not shown) penetrating the via layer VIAL. The anode electrode AE ​​can include a first anode electrode AE1 disposed in a first sub-pixel region SPXA1, a second anode electrode AE2 disposed in a second sub-pixel region SPXA2, and a third anode electrode AE3 disposed in a third sub-pixel region SPXA3.

[0090] The anode electrode AE ​​can contain a variety of conductive materials. For example, the anode electrode AE ​​can also contain transparent conductive materials. For instance, the anode electrode AE ​​can contain materials such as indium tin oxide (ITO), indium zinc oxide (IZO), and zinc oxide (ZnO). x The anode electrode AE ​​may contain at least one of a transparent conductive material such as zinc oxide, indium gallium zinc oxide (IGZO), and indium tin zinc oxide (ITZO). The anode electrode AE ​​may contain an opaque conductive material capable of reflecting light. For example, the anode electrode AE ​​may contain one or more of the group consisting of titanium nitride (TiN), silver (Ag), and aluminum (Al).

[0091] The pixel definition layer (PDL) can cover the anode electrode (AE) and can be disposed on the pixel circuit layer (PCL) (e.g., via layer (VIAL)). The pixel definition layer (PDL) can expose at least a portion of the anode electrode (AE).

[0092] The pixel definition layer (PDL) may contain organic or inorganic materials. For example, the pixel definition layer (PDL) may include multiple layers, each containing an inorganic material. However, this disclosure is not limited thereto.

[0093] Sidewalls (SW) can be arranged on the pixel definition layer (PDL). Sidewalls (SW) can be arranged in the boundary region between sub-pixel regions (SPXA). Sidewalls (SW) can be arranged between adjacent first light-emitting structures (EMS1), second light-emitting structures (EMS2), and third light-emitting structures (EMS3).

[0094] The sidewall SW may include a first sidewall SW1 on the pixel definition layer PDL and a second sidewall SW2 on the first sidewall SW1. The first sidewall SW1 may form a base for arranging the second sidewall SW2. The second sidewall SW2 may have a width greater than the width of the first sidewall SW1, thereby forming a pointed tip protruding in the planar direction of the base layer BSL. For example, when viewed in a planar plane, at least a portion of the second sidewall SW2 may not overlap with the first sidewall SW1. When viewed in a planar plane, the second sidewall SW2 may completely cover the first sidewall SW1.

[0095] The first sidewall SW1 and the second sidewall SW2 may comprise conductive materials. According to embodiments, the first sidewall SW1 and the second sidewall SW2 may comprise different conductive materials. For example, the first sidewall SW1 may have a higher conductivity than the second sidewall SW2. Compared to the first sidewall SW1, the second sidewall SW2 may have stronger properties to the etching environment. For example, the first sidewall SW1 may comprise aluminum (Al), and the second sidewall SW2 may comprise titanium (Ti). However, this disclosure is not limited thereto.

[0096] The conductive sidewall portion PAT can be disposed on the first sidewall SW1, and according to an embodiment, can cover a portion of the pixel definition layer PDL. The conductive sidewall portion PAT can expose the anode electrode AE.

[0097] The conductive sidewall portion PAT can be disposed at the lower part of the second sidewall SW2. The conductive sidewall portion PAT can cover the side surface of the first sidewall SW1. According to an embodiment, the conductive sidewall portion PAT can completely cover the side surface of the first sidewall SW1. The conductive sidewall portion PAT can not expose the side surface of the first sidewall SW1. For example, the conductive sidewall portion PAT can be patterned based on a sputtering process, and the conductive sidewall portion PAT can completely cover the side surface of the first sidewall SW1.

[0098] The conductive sidewall portion PAT may contain a conductive material. The conductive sidewall portion PAT may be electrically connected to the first sidewall SW1. A portion of a cathode path may be formed in the conductive sidewall portion PAT. For example, the conductive sidewall portion PAT is suitable for dry etching processes and may contain a conductive material with a relatively reduced risk of oxide film formation. As an example, the conductive sidewall portion PAT may contain one or more of titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum alloys.

[0099] According to an embodiment, the conductive sidewall portion PAT may contain the same conductive material as the second sidewall SW2. For example, the conductive sidewall portion PAT may contain titanium (Ti), just like the second sidewall SW2.

[0100] The conductive sidewall portion PAT can be arranged in each of the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3. For example, the conductive sidewall portion PAT can be formed in each sidewall SW in the region adjacent to the light-emitting element LD.

[0101] The conductive sidewall portion PAT can have a relatively thin thickness. For example, the conductive sidewall portion PAT can have a thickness that is thinner than that of the second sidewall SW2.

[0102] According to an embodiment, the conductive sidewall portion PAT enables the cathode electrode CE to be tightly bonded to the sidewall SW. For example, when the first sidewall SW1 contains aluminum, an aluminum oxide layer can be formed on a portion of the outer surface of the first sidewall SW1 during the manufacturing process of the display device DD. In this case, experimentally, the cathode electrode CE may be difficult to bond tightly to the first sidewall SW1 due to the aluminum oxide layer. However, according to an embodiment, the conductive sidewall portion PAT, having a relatively thin thickness, is arranged on the first sidewall SW1, thereby maintaining the conductivity characteristics of the first sidewall SW1 relatively, and the conductive sidewall portion PAT is sandwiched between the first sidewall SW1 and the cathode electrode CE, thereby improving the adhesion of the cathode electrode CE. This reduces the risk of interlayer peeling and improves the structural stability of the display device DD.

[0103] The conductive sidewall portion PAT and the second sidewall SW2 can each have overlapping ends. For example, when performing an etching process to pattern the conductive sidewall portion PAT, the conductive structure corresponding to the position of the conductive sidewall portion PAT can be avoided by the second sidewall SW2. This eliminates the need for additional masking and other process steps, improving process convenience. Further details will be provided in [reference needed]. Figure 8 and Figure 9 The accompanying diagrams will be discussed later.

[0104] The light-emitting structure EMS can be disposed between the anode electrode AE ​​and the cathode electrode CE, and one surface of the light-emitting structure EMS can be electrically connected to the anode electrode AE, and the other surface of the light-emitting structure EMS can be electrically connected to the cathode electrode CE. At least a portion of the light-emitting structure EMS can cover the conductive sidewall portion PAT.

[0105] The light-emitting structure EMS may include a first light-emitting structure EMS1 configured to emit light of a first color, a second light-emitting structure EMS2 configured to emit light of a second color, and a third light-emitting structure EMS3 configured to emit light of a third color.

[0106] A light-emitting structure (EMS) may include multiple layers. For example, an EMS may include a hole transport unit (HTU), a light-emitting unit (EML) (or a light-generating layer), and an electron transport unit (ETU). Each layer forming the EMS may contain an organic material, and according to embodiments, may also contain inorganic materials such as metal-containing compounds or quantum dots.

[0107] The hole transport unit (HTU) may include a multilayer structure having multiple layers each containing different materials. As an example, the hole transport unit (HTU) may include a hole injection layer and a hole transport layer, and according to embodiments, may also include a light-emitting auxiliary layer and an electron blocking layer, etc.

[0108] The light-emitting element (EML) may contain a material capable of emitting light of a single color. The EML may include a substrate and a dopant. The substrate of the EML, as a light-emitting material capable of capturing charge carriers (electrons and holes) for light generation, can be induced to efficiently generate excitons. The dopant may include a phosphorescent dopant or a fluorescent dopant. According to embodiments, examples of dopant are not particularly limited. According to embodiments, the dopant may contain an organic material or a metal complex, etc.

[0109] The electron transport unit (ETU) may include a multilayer structure having multiple layers each containing different materials. The ETU may include an electron injection layer and an electron transport layer, and according to embodiments, may also include an electron buffer layer, a hole blocking layer, etc.

[0110] The cathode electrode CE can be disposed on the light-emitting structure EMS and the conductive sidewall portion PAT. The cathode electrode CE can be deposited on the light-emitting structure EMS, and during the deposition process, at least a portion of the cathode electrode CE can be disconnected in the boundary region between the sub-pixel regions SPXA due to the second sidewall SW2.

[0111] According to an embodiment, the cathode electrode CE may include: a first cathode electrode CE1 included in a first sub-pixel SP1; a second cathode electrode CE2 included in a second sub-pixel SP2; and a third cathode electrode CE3 included in a third sub-pixel SP3.

[0112] According to an embodiment, the cathode electrode CE can receive a cathode signal (e.g., cathode voltage) through a sidewall SW (e.g., a first sidewall SW1) and a conductive sidewall portion PAT. For example, although not shown in the figures, the sidewall SW can be electrically connected to the power wiring formed in the pixel circuit layer PCL through a contact member penetrating the pixel definition layer PDL.

[0113] The cathode electrode CE can comprise a variety of conductive materials. For example, the cathode electrode CE can be a conductive thin film containing silver (Ag). For example, the cathode electrode CE can contain silver (Ag) and may also contain additional metals. The additional metals may include one or more of magnesium (Mg), aluminum (Al), copper (Cu), calcium (Ca), and barium (Ba). For example, the cathode electrode CE can comprise a silver-magnesium (AgMg) alloy. However, this disclosure is not limited thereto.

[0114] According to the embodiments (refer to) Figure 2 and Figure 3 The cathode electrode CE can entirely cover the conductive sidewall portion PAT. For example, in the region between the sidewalls SW, the end of the cathode electrode CE can be formed in a region corresponding to the height of the first sidewall SW1. The end of the cathode electrode CE can be defined (e.g., formed) in the lower portion immediately adjacent to the second sidewall SW2. The cathode electrode CE may not expose the conductive sidewall portion PAT. In this case, the cathode electrode CE can be stably electrically connected to the first sidewall SW1 through the conductive sidewall portion PAT, and a cathode electrical path with relatively low contact resistance can be tightly defined.

[0115] However, this disclosure is not limited thereto. In another embodiment (see...) Figure 4 and Figure 5 The cathode electrode CE may cover a portion of the conductive sidewall portion PAT, or it may not cover a portion of the conductive sidewall portion PAT. For example, in the region between the sidewalls SW, the end of the cathode electrode CE may be formed at a height lower than the height of the first sidewall SW1. The end of the cathode electrode CE may be defined (e.g., formed) to be spaced apart from the second sidewall SW2. The cathode electrode CE may expose a portion of the conductive sidewall portion PAT.

[0116] The first anode electrode AE1, the first light-emitting structure EMS1, and the first cathode electrode CE1 can form a first light-emitting element LD1 that emits light of a first color; the second anode electrode AE2, the second light-emitting structure EMS2, and the second cathode electrode CE2 can form a second light-emitting element LD2 that emits light of a second color; and the third anode electrode AE3, the third light-emitting structure EMS3, and the third cathode electrode CE3 can form a third light-emitting element LD3 that emits light of a third color.

[0117] A transparent conductive layer (TCL) can be disposed on the cathode electrode (CE). The transparent conductive layer (TCL) can be deposited on the cathode electrode (CE), and during the deposition process, at least a portion of the transparent conductive layer (TCL) can be disconnected in the boundary region between the sub-pixel regions (SPXA) due to the second sidewall (SW2).

[0118] The transparent conductive layer TCL may include: a first transparent conductive layer TCL1 included in the first sub-pixel SP1; a second transparent conductive layer TCL2 included in the second sub-pixel SP2; and a third transparent conductive layer TCL3 included in the third sub-pixel SP3.

[0119] The transparent conductive layer (TCL) may contain a transparent conductive material. This transparent conductive material may include one or more of the following: indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (IO), tin oxide (TO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), aluminum tin oxide (ATO), indium tin zinc oxide (ITZO), zinc oxide (ZnO), and tin oxide (SnO2). However, this disclosure is not limited thereto.

[0120] The transparent conductive layer TCL can completely cover the conductive sidewall portion PAT. The transparent conductive layer TCL can also completely cover the cathode electrode CE on the conductive sidewall portion PAT. The end of the transparent conductive layer TCL can be defined (e.g., formed) immediately below the second sidewall SW2. The transparent conductive layer TCL may not expose the conductive sidewall portion PAT and the cathode electrode CE. In this case, the transparent conductive layer TCL can compensate for the relatively low adhesion of the cathode electrode CE. For example, since the transparent conductive layer TCL can completely cover the upper surface of the cathode electrode CE, the encapsulation layer TFE can be tightly formed on the cathode electrode CE. That is, the encapsulation layer TFE can be directly adjacent to the layer below it, and the risk of layers peeling off from each other can be reduced, thus the encapsulation layer TFE can tightly encapsulate the layer below it. Accordingly, the risk of external impurities such as moisture penetrating into the light-emitting element LD can be reduced.

[0121] According to the embodiments (refer to) Figure 2 and Figure 3 The transparent conductive layer TCL can be separated from the conductive sidewall portion PAT. Alternatively, in another embodiment (see...) Figure 4 and Figure 5 In this process, the transparent conductive layer TCL can contact a portion of the conductive sidewall portion PAT exposed via the cathode electrode CE.

[0122] According to an embodiment, at least a portion of each of the following materials can be disposed on the second sidewall SW2: the material formed in the same process as the first light-emitting structure EMS1, the second light-emitting structure EMS2 and the third light-emitting structure EMS3, the material formed in the same process as the cathode electrode CE, and the material formed in the same process as the transparent conductive layer TCL.

[0123] The encapsulation layer TFE can encapsulate the light-emitting element (LD) and can offset the step difference formed by the layers formed beneath the encapsulation layer TFE. The encapsulation layer TFE can include a multilayer structure. For example, the encapsulation layer TFE can include a first encapsulation layer TFE1, a second encapsulation layer TFE2, and a third encapsulation layer TFE3. According to an embodiment, the first encapsulation layer TFE1 can include an inorganic layer, the second encapsulation layer TFE2 can include an organic layer, and the third encapsulation layer TFE3 can include an inorganic layer. The first encapsulation layer TFE1 can passivate the light-emitting element (LD), the transparent conductive layer TCL, and the sidewall SW, and the second encapsulation layer TFE2 and the third encapsulation layer TFE3 can be sequentially arranged on the first encapsulation layer TFE1. According to an embodiment, the encapsulation layer TFE can be a thin-film encapsulation film.

[0124] The upper UL layer can be arranged on the light-emitting element layer LEL with reference to the display orientation of the display device DD (e.g., third orientation DR3). The upper UL layer can include various functional layers. For example, the upper UL layer can be formed in each of the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3, and respectively include a first color filter, a second color filter, and a third color filter that transmit light of the first color, the second color, and the third color. The upper UL layer can also include cover windows, etc. The structure of the upper UL layer is not particularly limited.

[0125] Reference Figures 7 to 16 The manufacturing method of the display device DD according to the embodiment will be described. Content that may overlap with the above description will be briefly described or will not be repeated.

[0126] Figures 7 to 16 This is a schematic cross-sectional view illustrating each process step of a method for manufacturing a display device according to an embodiment. For ease of explanation, Figures 7 to 16 Therefore, it is a reference Figure 2 and Figure 4 The cross-sectional structure shown in the illustration is based on the reference.

[0127] Figures 7 to 16 The process steps for forming the pixel circuit layer PCL and the light-emitting element layer LEL in the manufacturing process of the display device DD are shown.

[0128] First, refer to Figures 7 to 12 The manufacturing method of the display device DD according to the embodiment will be described.

[0129] Reference Figure 7 It can provide a pixel circuit layer PCL, and can pattern the anode electrode AE, pixel definition layer PDL and sidewall SW on the pixel circuit layer PCL.

[0130] According to embodiments, the conductive or insulating layer on the base layer (BSL) can be formed based on conventional processes used for manufacturing semiconductor devices. For example, the conductive or insulating layer on the base layer (BSL) can be formed by photolithography, etched using various methods (wet etching, dry etching, etc.), and deposited using various methods (sputtering, chemical vapor deposition, etc.). This disclosure is not limited to specific examples.

[0131] In this step, the first pixel circuit PXC1, the second pixel circuit PXC2, and the third pixel circuit PXC3 can be patterned on the base layer BSL, and a via layer VIAL can be formed covering the first pixel circuit PXC1, the second pixel circuit PXC2, and the third pixel circuit PXC3.

[0132] In this step, the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be patterned within the first sub-pixel region SPXA1, the second sub-pixel region SPXA2, and the third sub-pixel region SPXA3, and the pixel definition layer PDL that partially covers the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3 can be patterned.

[0133] In this step, a first sidewall SW1 and a second sidewall SW2 can be patterned on the pixel definition layer PDL. The first sidewall SW1 may include a tapered side surface, and the second sidewall SW2 may form a portion protruding from the first sidewall SW1.

[0134] Reference Figure 8 The basic conductive sidewall portion PAT_B can be patterned.

[0135] In this step, the basic conductive sidewall portion PAT_B can be deposited in a manner that covers the side surface of the first sidewall SW1 and the anode electrode AE. According to an embodiment, the basic conductive sidewall portion PAT_B can be formed based on a sputtering process. In this case, compared to the case where a thermal deposition process is applied, the basic conductive sidewall portion PAT_B can completely cover the sidewall of the first sidewall SW1.

[0136] In this step, the basic conductive sidewall portion PAT_B may cover a portion of the anode electrode AE ​​exposed by the pixel definition layer PDL. When viewed in a plane, a portion of the basic conductive sidewall portion PAT_B may not overlap with the second sidewall SW2.

[0137] Reference Figure 9 At least a portion of the basic conductive sidewall portion PAT_B can be etched, and conductive sidewall portion PAT can be provided.

[0138] In this step, a full-surface etching process can be performed on the basic conductive sidewall portion PAT_B and the second sidewall SW2. The full-surface etching process applied in this step can be an anisotropic dry etching process. According to an embodiment, the thickness of the second sidewall SW2 can be reduced, and when viewed in a plane, the portion of the basic conductive sidewall portion PAT_B that does not overlap with the second sidewall SW2 (e.g., is not covered by the second sidewall SW2) can be removed, and when viewed in a plane, the anode electrode AE ​​can be exposed in the area that does not overlap with the second sidewall SW2 (e.g., is not covered by the second sidewall SW2).

[0139] In this step, the basic conductive sidewall portion PAT_B can be etched using an anisotropic dry etching process, so the ends of the manufactured conductive sidewall portion PAT and the second sidewall SW2 can be defined (e.g., formed) to overlap. Furthermore, the basic conductive sidewall portion PAT_B can contain the same conductive material as the second sidewall SW2 (e.g., titanium (Ti)). Accordingly, the basic conductive sidewall portion PAT_B can be patterned based on the thickness relationship between the second sidewalls SW2, thereby forming the conductive sidewall portion PAT. Therefore, an additional photomask is not required, thus simplifying the process steps and improving the process convenience of etching the basic conductive sidewall portion PAT_B.

[0140] Reference Figure 10 and Figure 11 The first light-emitting structure EMS1, the second light-emitting structure EMS2, and the third light-emitting structure EMS3 can be sequentially patterned on the first anode electrode AE1, the second anode electrode AE2, and the third anode electrode AE3, respectively. The first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3 can also be patterned. The first transparent conductive layer TCL1, the second transparent conductive layer TCL2, and the third transparent conductive layer TCL3 can also be patterned.

[0141] In this step, the first light-emitting structure EMS1, the second light-emitting structure EMS2, and the third light-emitting structure EMS3 can be patterned separately based on a deposition process. For example, each of the first light-emitting structure EMS1, the second light-emitting structure EMS2, and the third light-emitting structure EMS3 can be deposited using a fine metal mask (FMM). However, this disclosure is not limited thereto.

[0142] In this step, electrode layers for patterning the first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3 can be deposited. According to an embodiment, the first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3 can be formed based on a sputtering process.

[0143] In this case, compared to the case using thermal deposition, the first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3 can appropriately cover the conductive sidewall portion PAT on the sidewall of the first sidewall SW1 (refer to...). Figure 10 However, this disclosure is not limited thereto. For example (see...) Figure 11The first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3 can be based on a sputtering process, and the sputtering process can be performed so that the ends of the first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3 are defined at a relatively low height. The first cathode electrode CE1, the second cathode electrode CE2, and the third cathode electrode CE3 can also be patterned as part of the exposed conductive sidewall portion PAT.

[0144] In this step, conductive layers for patterning the first transparent conductive layer TCL1, the second transparent conductive layer TCL2, and the third transparent conductive layer TCL3 can be deposited. According to an embodiment, the first transparent conductive layer TCL1, the second transparent conductive layer TCL2, and the third transparent conductive layer TCL3 can be formed based on a sputtering process. In this case, compared to the case using a thermal deposition process, the first transparent conductive layer TCL1, the second transparent conductive layer TCL2, and the third transparent conductive layer TCL3 can integrally cover the conductive sidewall portion PAT on the sidewall of the first sidewall SW1 and the cathode electrode CE.

[0145] Reference Figure 12 It can form a TFE encapsulation layer covering the light-emitting element LD, the transparent conductive layer TCL, and the sidewall SW.

[0146] In this step, a first encapsulation layer TFE1, a second encapsulation layer TFE2, and a third encapsulation layer TFE3 can be formed sequentially. Thus, the lower layers of the encapsulation layers TFE can be appropriately encapsulated.

[0147] Subsequently, according to an embodiment, an upper layer UL comprising multiple functional layers can be formed on the encapsulation layer TFE, and a display device DD according to the embodiment can be provided.

[0148] Next, refer to Figures 13 to 16 The manufacturing method of the display device DD according to a partially modified embodiment will be described. Content that may overlap with the above description will be briefly explained or will not be repeated.

[0149] Unlike the manufacturing method of the aforementioned display device DD, in Figures 13 to 16 In the manufacturing method of the display device DD shown, after the conductive sidewall portion PAT is patterned, the pixel definition layer PDL can expose the anode electrode AE.

[0150] For example, refer to Figure 13 Before patterning the sidewalls SW, a base pixel definition layer PDL_B covering the anode electrode AE ​​can be formed, and in this step, the anode electrode AE ​​may not be exposed.

[0151] Reference Figure 14When the base pixel definition layer PDL_B does not expose the anode electrode AE, a base conductive sidewall portion PAT_B can be formed, as shown in the reference. Figure 15 When the base pixel definition layer PDL_B does not expose the anode electrode AE, the base conductive sidewall portion PAT_B can be etched, thereby patterning the conductive sidewall portion PAT. Then, refer to... Figure 16 After patterning the conductive sidewall portion PAT, the base pixel definition layer PDL_B can be etched to pattern the pixel definition layer PDL, and the anode electrode AE ​​can be exposed. According to this embodiment, after the base pixel definition layer PDL_B is etched, the anode electrode AE ​​can be exposed, thus more precisely preventing damage to the anode electrode AE.

[0152] Then, as mentioned above... Figures 10 to 12 The aforementioned method can sequentially form layers for forming a light-emitting element layer LEL, and can arrange an upper layer UL on the light-emitting element layer LEL, thereby providing a display device DD according to an embodiment.

[0153] The display device according to the embodiments can be applied to a variety of electronic devices. An electronic device according to one embodiment may include the aforementioned display device, and in addition to the display device, may also include modules or devices with other additional functions.

[0154] Figure 17 This is a block diagram of an electronic device according to one embodiment. (Refer to...) Figure 17 According to one embodiment, the electronic device 10 may include a display module 11, a processor 12, a memory 13, and a power module 14.

[0155] The processor 12 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0156] The memory 13 may store data information required for the operation of the processor 12 or the display module 11. If the processor 12 runs an application stored in the memory 13, it may transmit image data signals and / or input control signals to the display module 11, and the display module 11 may process the received signals to output image information through the display screen.

[0157] The power module 14 may include a power supply module such as a power adapter or battery device, and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 10. The power module 14 may be configured to supply power to the display module 11.

[0158] At least one of the aforementioned components of the electronic device 11 may be included within the display device according to the above-described embodiment. Furthermore, a portion of an individual module functionally included within a single module may be included within the display device, while another portion may be provided separately from the display device. For example, the display device may include the display module 11, while the processor 12, memory 13, and power module 14 may be provided as other devices within the electronic device 11 that are not part of the display device.

[0159] Figure 18 This is a schematic diagram of an electronic device according to various embodiments.

[0160] Reference Figure 18 According to the embodiments, the various electronic devices used in the application display device may include not only electronic devices for displaying images such as smartphones 10_1a, tablet PCs 10_1b, laptop computers 10_1c, televisions (TVs) 10_1d, and desktop monitors 10_1e, but also wearable electronic devices including display modules such as smart glasses 10_2a, head-mounted displays 10_2b, and smartwatches 10_2c, as well as vehicle electronic devices 10_3 including display modules such as car dashboards, central dashboards, central information displays (CIDs) arranged on the dashboard, and room mirror displays.

[0161] As described above, although preferred embodiments of the present disclosure have been described with reference to them, it is understood that those skilled in the art or those with ordinary knowledge of the corresponding art can modify and change the present disclosure in various ways without departing from the concept and technical scope of the present disclosure as set forth in the appended claims.

[0162] Therefore, the technical scope of this disclosure is not limited to the contents described in the detailed specification, but should be determined by the claims.

Claims

1. A display device, characterized by comprising: include: A light-emitting element is disposed on a base layer and includes an anode electrode, a cathode electrode, and a light-emitting structure electrically connected to the anode electrode and the cathode electrode; A pixel definition layer that covers a portion of the anode electrode; A sidewall is disposed on the pixel definition layer and includes a first sidewall and a second sidewall on the first sidewall; A conductive sidewall portion, at least a portion of which is disposed on the side surface of the first sidewall and exposes the anode electrode; as well as A transparent conductive layer is disposed on the cathode electrode and the conductive sidewall portion, and is made of a transparent conductive material.

2. The display device according to claim 1, characterized in that, The second sidewall has a width greater than that of the first sidewall.

3. The display device according to claim 1, characterized in that, The conductive sidewall portion integrally covers the side surface of the first sidewall and has a thickness thinner than that of the second sidewall.

4. The display device according to claim 1, characterized in that, When viewed in a plane, the conductive sidewall portion and the second sidewall have ends that overlap each other.

5. The display device according to claim 1, characterized in that, The cathode electrode does not expose the conductive sidewall portion on the first sidewall.

6. The display device according to claim 1, characterized in that, The cathode electrode partially exposes the conductive sidewall portion on the first sidewall.

7. The display device according to claim 1, characterized in that, The transparent conductive layer completely covers the conductive sidewall portion and the cathode electrode.

8. The display device according to claim 1, characterized in that, The cathode electrode is electrically connected to the first sidewall.

9. The display device according to claim 1, characterized in that, The first sidewall has a higher conductivity than the second sidewall.

10. The display device according to claim 9, characterized in that, The conductive sidewall portion and the second sidewall are made of the same conductive material.

11. The display device according to claim 1, characterized in that, The first sidewall is made of aluminum. The second sidewall is made of titanium. The conductive sidewall is made of one of titanium, titanium nitride, molybdenum, and molybdenum alloys. The cathode electrode is made of silver. The transparent conductive layer is composed of one of indium tin oxide, indium zinc oxide, indium oxide, tin oxide, indium gallium zinc oxide, aluminum zinc oxide, aluminum tin oxide, indium tin zinc oxide, zinc oxide, and tin oxide.

12. The display device according to claim 1, wherein include: The first sub-pixel region provides light of the first color; The second sub-pixel region provides light of the second color; as well as The third sub-pixel region provides light of the third color. The light-emitting element includes a first light-emitting element in the first sub-pixel region, a second light-emitting element in the second sub-pixel region, and a third light-emitting element in the third sub-pixel region.

13. An electronic device, comprising: include: processor; The display device is capable of outputting image information; as well as The power module is capable of supplying power to the display device. The display device includes: A light-emitting element is disposed on a base layer and includes an anode electrode, a cathode electrode, and a light-emitting structure electrically connected to the anode electrode and the cathode electrode; A pixel definition layer that covers a portion of the anode electrode; A sidewall is disposed on the pixel definition layer and includes a first sidewall and a second sidewall on the first sidewall; A conductive sidewall portion, at least a portion of which is disposed on the side surface of the first sidewall and exposes the anode electrode; and A transparent conductive layer is disposed on the cathode electrode and the conductive sidewall portion, and is made of a transparent conductive material.

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