A chemical vapor deposition apparatus

Abstract

The utility model discloses a kind of chemical vapor deposition equipment, which comprises: reaction cavity, reaction cavity includes deposition cavity and wafer transfer channel, wafer transfer channel is located at the side of deposition cavity and is communicated with deposition cavity, wafer transfer channel side wall has two openings, two openings are oppositely arranged;Two light transmission plates, two light transmission plates correspond to two openings one-to-one, light transmission plate is set at corresponding opening and is sealed with opening cooperation;Laser transmitter, located at the outside of wafer transfer channel, the emission head of laser transmitter is opposite to one light transmission plate;Laser receiver, located at the outside of wafer transfer channel, laser receiver is opposite to another light transmission plate, laser transmitter is used to emit laser signal towards laser receiver through light transmission plate, and laser receiver is used to receive laser signal and convert laser signal into light intensity signal. The chemical vapor deposition equipment can detect the cleaning condition of the position with low film cleaning efficiency without opening the reaction cavity for subjective evaluation.

Description

Technical Field

[0001] This utility model relates to the field of chemical vapor deposition technology, and in particular to a chemical vapor deposition device. Background Technology

[0002] Chemical vapor deposition (CVD) is an advanced technology widely used in the preparation of semiconductor, optoelectronic, and thin film materials. During the CVD process, the quality of the deposited thin film is crucial to the performance of the final product.

[0003] There are many types of CVD processes, among which sub-atmospheric chemical vapor deposition (SACVD) is a thermal reaction method without an RF system. During film growth, SACVD has a better "reflow" capability compared to other CVD methods. This superior "reflow" capability leads to stronger film growth at the inner wall of the chamber. Film growth occurs at all locations within the chamber during the growth process, such as heater edges, near valves, and at contact surfaces with relevant parts.

[0004] After deposition is completed and the substrate is transferred out of the cavity, CVD equipment executes a clean recipe to remove any residual film within the cavity. This prevents the film from accumulating and causing environmental changes that could affect process stability and film quality, while also mitigating the risk of particle accumulation. However, the clean rate varies at different locations within the cavity. Areas with lower clean rates after deposition may not be completely cleaned. With continued wafer transfer, film accumulation can reach a point where film quality is compromised, necessitating optimization of the clean recipe. However, monitoring the clean rate is challenging. For example, in existing SACVD equipment, after transferring 500 wafers, a significant amount of residual film is visible on the sidewalls upon opening the cavity. Current monitoring methods cannot effectively identify this anomaly, requiring macroscopic observation by opening the cavity. Utility Model Content

[0005] This invention provides a chemical vapor deposition (CVD) apparatus that can detect the cleaning status of locations with low film cleaning efficiency without requiring the opening of the reaction chamber for subjective human evaluation.

[0006] To achieve the above objectives, this utility model provides the following technical solution:

[0007] A chemical vapor deposition apparatus includes:

[0008] The reaction chamber includes a deposition chamber and a transfer channel. The transfer channel is located on one side of the deposition chamber and is connected to the deposition chamber. The side wall of the transfer channel has two openings, which are arranged opposite to each other.

[0009] Two light-transmitting plates, each corresponding to one of the two openings, are disposed at the corresponding openings and are sealed to each opening;

[0010] A laser emitter is located outside the transfer channel, and the emitting head of the laser emitter is opposite to one of the light-transmitting plates;

[0011] A laser receiver is located outside the transfer channel, and the laser receiver is opposite to another of the light-transmitting plates;

[0012] The laser emitter is used to emit a detection laser signal through the light-transmitting plate toward the laser receiver, and the laser receiver is used to receive the laser signal passing through the two light-transmitting plates and convert the laser signal into a light intensity signal.

[0013] Optionally, the end of the transfer channel away from the deposition chamber has a transfer port, and a valve is provided at the transfer port;

[0014] The opening is located near the valve.

[0015] Optionally, the distance between the opening and the valve is 15mm to 25mm.

[0016] Optionally, the opening is a circular hole with a diameter of 3 mm to 6 mm.

[0017] Optionally, the light-transmitting plate is made of fluorine-resistant quartz glass.

[0018] Optionally, the laser emitter is a semiconductor laser, and the laser receiver is a photodiode.

[0019] Optionally, the reaction chamber is integrally cast.

[0020] Optionally, it also includes a control unit, which is signal-connected to the laser emitter and the laser receiver;

[0021] The control unit is used to: control the laser emitter to emit a detection laser signal, receive the light intensity signal output by the laser receiver, and calculate the thickness of the thin film deposited on the light-transmitting plate based on the detection laser signal and the light intensity signal.

[0022] Optionally, it also includes an alarm unit, which is signal-connected to the control unit;

[0023] The control unit is used for:

[0024] If the thickness of the film deposited on the light-transmitting plate is greater than the preset thickness, the alarm unit is controlled to issue an alarm signal.

[0025] Optionally, the alarm unit is a display screen.

[0026] This invention provides a chemical vapor deposition (CVD) apparatus. In this apparatus, two opposing light-transmitting plates are arranged on the sidewall of the wafer transfer channel. A laser emitter and a laser receiver are located on the outer side of the wafer transfer channel. The laser emitter emits detection laser signals through the light-transmitting plates towards the laser receiver, and the laser receiver receives the laser signals passing through the two light-transmitting plates and outputs a light intensity signal. After the CVD process is performed in the reaction chamber, a thin film is deposited on the inner wall of the reaction chamber, meaning a thin film is also deposited on the light-transmitting plates. Different thicknesses of the thin film on the light-transmitting plates result in different laser signals received by the laser receiver, leading to different output light intensity signals. The cleaning effect at the wafer transfer channel can be judged by the light intensity signal. The wafer transfer channel is a location with low film cleaning efficiency. By using the laser emitter and laser receiver, the cleaning status of this low-efficiency location can be detected, and the cleaning effect inside the reaction chamber can be judged without opening the reaction chamber for subjective human evaluation. Attached Figure Description

[0027] Figure 1 A schematic diagram of a chemical vapor deposition apparatus provided for an embodiment of this utility model;

[0028] Figure 2 A schematic diagram of another chemical vapor deposition apparatus provided in this embodiment of the present invention;

[0029] Figure 3 This is a schematic diagram of an opening structure provided in an embodiment of the present utility model;

[0030] Figure 4 A graph showing the relationship between the film thickness and light intensity signal on the light-transmitting plate provided in this embodiment of the utility model.

[0031] icon:

[0032] 1-Reaction chamber; 11-Deposition chamber; 12-Plate transfer channel; 121-Opening; 2-Light-transmitting plate; 3-Laser emitter; 4-Laser receiver; 5-Gate valve; 6-Heating platform; 7-Support rod. Detailed Implementation

[0033] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0034] Chemical vapor deposition (CVD) equipment, including sub-atmospheric chemical vapor deposition (SACVD) equipment, executes a clean recipe after deposition and substrate transfer from the chamber. This cleans away any residual film within the chamber, preventing film accumulation and ensuring a stable process environment that could affect film quality and process stability. It also mitigates the risk of particle buildup. Remote plasma source cleaning (RPS) is typically used for this purpose. However, the clean rate varies across different locations within the chamber. After deposition, areas with lower clean rates may not be completely cleaned. Continuous wafer transfer can lead to film accumulation that negatively impacts quality, necessitating optimization of the clean operation. However, monitoring the effectiveness of the clean operation is challenging, requiring macroscopic observation through window opening to ensure complete cleaning.

[0035] From the perspective of machine utilization efficiency, monitoring the cleaning effect of the process chamber requires relatively frequent opening of the chamber, and there is a lag in the detection of cleaning abnormalities. That is, when an abnormality is detected after opening the chamber, it means that the abnormality has already occurred for a certain period of time. The opening operation leads to a serious decrease in the utilization efficiency of the machine. Moreover, multiple opening operations also pose certain risks to personnel operation and increase certain uncertainties. When judging the cleaning effect, there will inevitably be some interference from the subjective judgment of personnel, which will lead to the inability to output quantitative data on the cleaning effect.

[0036] From the perspective of equipment maintenance costs, each cavity opening requires a certain amount of manpower and time costs, and the cavity opening operation may also cause contamination or damage to the equipment, which also increases the potential equipment maintenance costs.

[0037] To avoid these problems, it is particularly important to achieve effective cleaning of the testing chamber without opening it.

[0038] Specifically, the steps for remote plasma source cleaning (RPS) can be as follows:

[0039] First, remote plasma excitation is performed. In an independent remote plasma source, a cleaning gas (such as NF3, O2, or inert gas) is discharged using radio frequency (RF) or microwave energy (such as 2.45 GHz) to generate high-energy plasma.

[0040] Then, active particles (free radicals, ions) in the plasma are uniformly transported into the reaction chamber through pipes, which are usually connected to the top of the reaction chamber. The activated particles react chemically with the thin film inside the chamber, decomposing it into volatile products or easily removable substances.

[0041] Staff can optimize cleaning instructions by adjusting parameters such as radio frequency (RF) or microwave energy power, gas flow rate, chamber pressure, and cleaning time.

[0042] The inventors of this application discovered through research that when cleaning the reaction chamber, the plasma is concentrated in the middle region of the reaction chamber, and the plasma density gradually decreases from the middle position of the reaction chamber to both ends. The plasma density at the location of the transfer channel is similar to the plasma density at both ends of the chamber. Therefore, the location of the transfer channel and both ends of the reaction chamber are the locations with low cleaning efficiency.

[0043] To solve the above technical problems, such as Figure 1 and Figure 2 As shown, this utility model provides a chemical vapor deposition apparatus comprising:

[0044] The reaction chamber 1 includes a deposition chamber 11 and a transfer channel 12. The transfer channel 12 is located on one side of the deposition chamber 11 and is connected to the deposition chamber 11. The side wall of the transfer channel 12 has two openings 121, which are arranged opposite to each other.

[0045] Two light-transmitting plates 2, each corresponding to one of the two openings 121, are set at the corresponding openings 121 and are sealed to fit with the openings 121.

[0046] Laser emitter 3 is located outside the transfer channel 12, and the emitting head of laser emitter 3 is opposite to a light-transmitting plate 2;

[0047] Laser receiver 4 is located outside the film transfer channel 12, and laser receiver 4 is opposite to another light-transmitting plate 2;

[0048] The laser emitter 3 is used to emit detection laser signals through the light-transmitting plate 2 toward the laser receiver 4, and the laser receiver 4 is used to receive the laser signals passing through the two light-transmitting plates 2 and convert the laser signals into light intensity signals.

[0049] In the chemical vapor deposition apparatus provided in this embodiment of the present invention, two opposing light-transmitting plates 2 are arranged on the side wall of the transfer channel 12. A laser emitter 3 and a laser receiver 4 are arranged on the outside of the transfer channel 12. The laser emitter 3 can emit detection laser signals through the light-transmitting plates 2 toward the laser receiver 4. The laser receiver 4 can receive the laser signals passing through the two light-transmitting plates 2 and output a light intensity signal. After the chemical vapor deposition process is performed in the reaction chamber 1, a thin film will be deposited on the inner wall of the reaction chamber 1, that is, a thin film will also be deposited on the light-transmitting plates 2. The thickness of the thin film on the light-transmitting plates 2 is different, and the laser signals received by the laser receiver 4 through the light-transmitting plates 2 are different, so the output light intensity signals are different. The cleaning effect at the transfer channel 12 can be judged by the light intensity signal. The transfer channel 12 is a position with low film cleaning efficiency. By using the laser emitter 3 and the laser receiver 4, the cleaning status of the position with low film cleaning efficiency can be detected, and the cleaning effect on the inside of the reaction chamber 1 can be judged without opening the reaction chamber 1 for subjective human evaluation.

[0050] In this embodiment of the invention, the chemical vapor deposition equipment may further include a control unit, which is connected to the laser emitter 3 and the laser receiver 4 via signal connection. By connecting the control unit to the laser emitter 3 and the laser receiver 4 via signal connection, automatic real-time monitoring of the cleaning status inside the reaction chamber 1 can be achieved. If an abnormality occurs in the cleaning of the chamber, the operator can detect the problem immediately through the real-time monitoring data, thus avoiding serious production abnormalities.

[0051] Specifically, the control unit can control the laser emitter 3 to emit a detection laser signal, receive the light intensity signal output by the laser receiver 4, and calculate the thickness of the thin film deposited on the light-transmitting plate 2 based on the detection laser signal and the light intensity signal.

[0052] In the aforementioned chemical vapor deposition equipment, during the real-time monitoring of the cleaning status inside the reaction chamber 1, or after the reaction chamber 1 has been cleaned, the control unit can control the laser emitter 3 to emit a detection laser signal. The laser receiver 4 can receive the laser signal passing through the light-transmitting plate 2 in real time, read the intensity of the received laser signal in real time, display it as an intensity signal, and transmit it to the control unit. The control unit can calculate the thickness of the film deposited on the light-transmitting plate based on the intensity value of the detection laser signal and the intensity signal value, and thus judge the cleaning effect inside the reaction chamber 1 without opening the reaction chamber 1 for subjective human evaluation.

[0053] Specifically, the control unit can be used for:

[0054] The thickness of the thin film deposited on the light-transmitting plate 2 is calculated based on the detected laser signal and light intensity signal.

[0055] If the thickness of the film deposited on the light-transmitting plate 2 is greater than the preset thickness, it is determined that the cleaning of the inside of the reaction chamber 1 is incomplete.

[0056] In the aforementioned chemical vapor deposition equipment, after the internal cleaning of the reaction chamber 1 is completed, the control unit receives the light intensity signal output by the laser receiver 4. The specific light intensity loss value can be obtained by comparing the value of this light intensity signal with the light intensity value of the detected laser signal. This light intensity loss value can then be used to calculate the thickness of the film deposited on the light-transmitting plate 2. If the thickness of the film deposited on the light-transmitting plate 2 is greater than the preset thickness, it can be determined that the cleaning of the internal parts of the reaction chamber 1 is incomplete, requiring optimization of the cleaning command and adjustment of various parameters during cleaning to avoid serious production abnormalities. Conversely, if the thickness of the film deposited on the light-transmitting plate 2 is less than or equal to the preset thickness, it can be determined that the internal cleaning of the reaction chamber 1 is complete, the current cleaning command is appropriate, and no adjustment is required.

[0057] In this embodiment of the invention, the chemical vapor deposition apparatus may further include an alarm unit, which may be connected to the control unit via a signal; the control unit may control the alarm status of the alarm unit based on the cleaning effect inside the reaction chamber 1.

[0058] Specifically, the control unit can be used to: if the thickness of the film deposited on the light-transmitting plate 2 is greater than the preset thickness, control the alarm unit to issue an alarm signal.

[0059] In the aforementioned chemical vapor deposition equipment, when the control unit determines that the cleaning inside the reaction chamber 1 is incomplete, it can control the alarm unit to sound an alarm, reminding the staff to optimize the cleaning instructions, adjust various parameters during cleaning, and improve the cleaning efficiency inside the reaction chamber 1. When the control unit determines that the cleaning inside the reaction chamber 1 is complete, the alarm unit will not sound an alarm.

[0060] Specifically, the alarm unit can be a display screen, which can display the value of the monitored light intensity signal or the value of the film thickness on the light-transmitting plate, as well as a reminder that the cleaning is incomplete, to alert the operator; or, the alarm unit can be an indicator light, which the control unit can control to light up to trigger an alarm; or, the alarm unit can be a speaker, which the control unit can control to emit a sound to trigger an alarm.

[0061] In this embodiment of the utility model, such as Figure 1 and Figure 2 As shown, the deposition chamber 11 may have a heating platform 6, which is supported by a support rod 7. The wafer can be subjected to chemical vapor deposition on the heating platform 6. The wafer transfer channel 12 can be used to transfer wafers. Wafers can be placed on the heating platform 6 through the wafer transfer channel 12 or removed from the heating platform 6 through the wafer transfer channel 12.

[0062] Since the wafer transfer channel 12 is located on one side of the deposition chamber 11, there is less plasma at the wafer transfer channel 12 when cleaning the thin film inside the reaction chamber 1, making the wafer transfer channel 12 a location with weak cleaning effect. A laser emitter 3 and a laser receiver 4 are installed at this location with weak cleaning effect. As the number of wafers transferred within the reaction chamber 1 accumulates, the monitoring system composed of the laser emitter 3, laser receiver 4, and control unit can reflect the thin film accumulation at the location with weak cleaning effect through the intensity of the laser signal, and convert the intensity of the laser signal into the corresponding "residual film" thickness, achieving a visualized and quantifiable state of thin film cleaning. Operators can judge the cleaning effect of existing cleaning commands based on the monitored signals without needing to open the reaction chamber 1 for subjective human evaluation.

[0063] In practical applications of the aforementioned chemical vapor deposition equipment, the monitoring system composed of laser emitter 3, laser receiver 4, and control unit can be effectively used in the development process of various parameters for cleaning commands. It can also be used to monitor the cleaning process of reaction chamber 1 throughout the entire PM (preventive maintenance) cycle, enabling real-time monitoring of cleaning capabilities at locations with weak cleaning effects. The intensity of the laser signal received by laser receiver 4 can be used to determine the amount of film residue at that location, thus assessing the cleaning effect. This allows for timely detection of incomplete cleaning within reaction chamber 1, prompting operators to optimize cleaning parameters and preventing long-term film accumulation that could lead to process changes and other potential process problems, effectively improving film quality and efficiency. Furthermore, if abnormal chamber cleaning occurs, real-time monitoring data can detect the problem immediately, and the monitoring system's signal can be transmitted to the control unit for immediate response, preventing serious production anomalies.

[0064] Specifically, the control unit can be the machine control unit of the chemical vapor deposition equipment, which can greatly improve the utilization rate of the machine to a certain extent. The monitoring function module is configured in the machine software. By setting a preset thickness value at the machine end, the "residual film" of the film after cleaning exceeds the set preset thickness value, so as to realize the first-time response and avoid serious production abnormalities.

[0065] Specifically, the aforementioned chemical vapor deposition equipment can be a subatmospheric chemical vapor deposition (SACVD) device. SACVD uses ozone / tetraethyl orthosilicate as a precursor and deposits BPSG (boron-phosphorus-doped silicon oxide film) or USG (undoped silicon oxide film) onto the wafer through subatmospheric chemical vapor deposition.

[0066] Alternatively, the chemical vapor deposition equipment described above can also be other types of chemical vapor deposition equipment, which are not limited here and depend on the actual situation.

[0067] Specifically, the preset thickness value can be determined according to the deposition process in the chemical vapor deposition equipment. In particular, the preset thickness value will be different depending on the deposition process. There is no restriction here, and it depends on the actual situation.

[0068] In this embodiment of the utility model, such as Figure 1 and Figure 2 As shown, the wafer transfer channel 12 has a wafer transfer port at the end away from the deposition chamber 11. A valve 5 can be installed at the wafer transfer port. The valve 5 can be opened and closed. When the valve 5 is opened, the reaction chamber 1 can be opened to transfer the wafer through the wafer transfer channel 12. When the valve 5 is closed, the reaction chamber 1 can be closed.

[0069] The opening 121 can be positioned near the valve 5, meaning the light-transmitting plate 2 is positioned near the valve 5. The area near the valve 5 is a weak point in the cleaning process of the chemical vapor deposition equipment. Positioning the opening 121 near the valve 5 facilitates the monitoring of the cleaning effect in this weak point.

[0070] In this embodiment of the utility model, the distance between the opening 121 and the valve 5 can be 15mm to 25mm, which facilitates the setting of the opening 121.

[0071] For example, the opening 121 is located at a straight-line distance of 20mm from the valve 5. Alternatively, the distance between the opening 121 and the valve 5 can be other distances, which are not limited here.

[0072] Specifically, the transfer channel 12 is connected to the side wall 111 of the deposition chamber 11, and the side wall 111 of the deposition chamber 11 is located between the top wall 112 and the bottom wall 113 of the deposition chamber 11. The transfer channel 12 can be formed by sequentially connecting and fitting an upper side wall, a left side wall, a lower side wall, and a right side wall. The upper side wall and the lower side wall are opposite each other and arranged along a first direction, and the left side wall and the right side wall are opposite each other. The first direction is the arrangement direction of the top and bottom walls of the reaction chamber 1. Two openings 121 can be respectively set in the middle area along the first direction on the left side wall and the right side wall of the transfer channel 12. Figure 3 As shown, this facilitates the monitoring of cleaning effectiveness in areas where cleaning is weak.

[0073] In this embodiment of the utility model, the opening 121 can be a circular hole with a diameter of 3mm to 6mm. The structure is simple and easy to manufacture, which is beneficial for the detection laser signal emitted by the laser emitter 3 to pass through the light-transmitting plate 2 at the opening 121.

[0074] For example, the diameter of the opening 121 can be 5mm. Alternatively, the shape of the opening 121 can also be other shapes, and the size of the opening 121 can also be other sizes. There are no restrictions here, and it depends on the actual situation.

[0075] In this embodiment of the invention, the light-transmitting plate 2 can be made of fluorine-resistant quartz glass, a common and easy-to-manufacture material. Alternatively, the light-transmitting plate 2 can be made of other materials, which are not limited here.

[0076] Specifically, the material of the light-transmitting plate 2 can be the same as the material of the observation window on the reaction chamber 1.

[0077] In this embodiment of the utility model, the light-transmitting plate 2 is a consumable part that is easily damaged. For example, the condition of the light-transmitting plate 2 needs to be checked every 3 months and replaced in a timely manner to ensure the accuracy of the test signal.

[0078] In this embodiment of the invention, the laser emitter 3 is a semiconductor laser and the laser receiver 4 is a photodiode. The structure is simple, easy to set up, and saves equipment costs.

[0079] Semiconductor lasers offer advantages such as small size, long lifespan, low price, and light weight. Optionally, the laser emitter 3 can also be an emitter of other structures; this is not limited here and depends on the specific circumstances.

[0080] Specifically, the output power of the semiconductor laser can be 10mW, the wavelength of the emitted laser signal can be 650nm, and it can generate different photocurrents as the light intensity changes. For example, the light intensity of the laser signal emitted by the semiconductor laser can be 1W / cm². 2 Alternatively, the data parameters of the semiconductor laser can also be other values; there are no restrictions here, and it depends on the actual situation.

[0081] Alternatively, the laser receiver 4 can also be a receiver of other structures, which is not limited here and depends on the actual situation.

[0082] In this embodiment of the present invention, the reaction chamber 1 can be integrally cast, which can ensure the accuracy of the size and position of the opening 121, which is beneficial to the sealing fit between the light-transmitting plate 2 and the opening 121, and prevents the material inside the reaction chamber 1 from leaking out.

[0083] The detection data of the chemical vapor deposition equipment provided in this embodiment of the invention in practical applications can be seen in Table 1 and... Figure 4 As shown, Figure 4 The graph shows the relationship between the light intensity signal and the film thickness on the transparent plate. The wavelength of the detection laser signal emitted by laser emitter 3 is 650nm, and the initial light intensity is 1W / cm². 2 The initial value of the light intensity signal (the light intensity value of the first light intensity signal output by the laser receiver after cleaning) is 0.982 to 0.989.

[0084] Table 1

[0085]

[0086] From Table 1 and Figure 4 The data shows that if the cleaning capability of the current cleaning command is insufficient, the amount of "residual film" in the weak cleaning position inside the reaction chamber 1 will be relatively large, and the light intensity value of the laser signal detected by the laser receiver 4 will be relatively low. Conversely, if the cleaning capability of the current cleaning command is good, the light intensity value of the laser signal detected by the laser receiver 4 will be relatively high. After each cleaning operation is executed, the cleaning capability of the cleaning operation can be judged by comparing the initial value of the light intensity signal. After the number of wafers transmitted to the deposition chamber 11 accumulates to a certain number, it is only necessary to check the data output by the laser receiver 4. There is no need to open the chamber, which greatly saves time and manpower costs and avoids potential risks in the process of opening the chamber.

[0087] It should be noted that when the thickness of the film remaining on the light-transmitting plate 2 is uniform, the light intensity value of the laser signal received by the laser receiver 4 will be affected by factors such as the type of laser emitter 3, wavelength, and light intensity setting of the detected laser signal, resulting in different responses. Similarly, the response degree of films with different refractive indices and extinction coefficients will inevitably have certain differences. In this embodiment, the specific detection data of the chemical vapor deposition equipment are based on the materials of the laser emitter 3, laser receiver 4, and deposited film in actual applications, and no restrictions are imposed here.

[0088] Obviously, those skilled in the art can make various modifications and variations to the embodiments of this utility model without departing from the spirit and scope of this utility model. Therefore, if these modifications and variations of this utility model fall within the scope of the claims of this utility model and their equivalents, this utility model also intends to include these modifications and variations.

Claims

1. A chemical vapor deposition apparatus, characterized in that, include: The reaction chamber includes a deposition chamber and a transfer channel. The transfer channel is located on one side of the deposition chamber and is connected to the deposition chamber. The side wall of the transfer channel has two openings, which are arranged opposite to each other. Two light-transmitting plates, each corresponding to one of the two openings, are disposed at the corresponding openings and are sealed to each opening; A laser emitter is located outside the transfer channel, and the emitting head of the laser emitter is opposite to one of the light-transmitting plates; A laser receiver is located outside the transfer channel, and the laser receiver is opposite to another of the light-transmitting plates; The laser emitter is used to emit a detection laser signal through the light-transmitting plate toward the laser receiver, and the laser receiver is used to receive the laser signal passing through the two light-transmitting plates and convert the laser signal into a light intensity signal.

2. The chemical vapor deposition apparatus according to claim 1, characterized in that, The transfer channel has a transfer port at one end away from the deposition chamber, and a valve is provided at the transfer port; The opening is located near the valve.

3. The chemical vapor deposition apparatus according to claim 2, characterized in that, The distance between the opening and the valve is 15mm to 25mm.

4. The chemical vapor deposition apparatus according to claim 1, characterized in that, The opening is a circular hole with a diameter of 3mm to 6mm.

5. The chemical vapor deposition apparatus according to claim 1, characterized in that, The light-transmitting panel is made of fluorine-resistant quartz glass.

6. The chemical vapor deposition apparatus according to claim 1, characterized in that, The laser emitter is a semiconductor laser, and the laser receiver is a photodiode.

7. The chemical vapor deposition apparatus according to claim 1, characterized in that, The reaction chamber is integrally cast.

8. The chemical vapor deposition apparatus according to any one of claims 1-7, characterized in that, It also includes a control unit, which is signal-connected to the laser transmitter and the laser receiver; The control unit is used to: control the laser emitter to emit a detection laser signal, receive the light intensity signal output by the laser receiver, and calculate the thickness of the thin film deposited on the light-transmitting plate based on the detection laser signal and the light intensity signal.

9. The chemical vapor deposition apparatus according to claim 8, characterized in that, It also includes an alarm unit, which is signal-connected to the control unit; The control unit is used for: If the thickness of the film deposited on the light-transmitting plate is greater than the preset thickness, the alarm unit is controlled to issue an alarm signal.

10. The chemical vapor deposition apparatus according to claim 9, characterized in that, The alarm unit is a display screen.

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