Large-size high-purity indium phosphide polycrystalline semiconductor material horizontal synthesis equipment
By introducing a rotating mechanism and a feeding structure into the large-size high-purity indium phosphide polycrystalline semiconductor material synthesis equipment, the problem of adhesion between indium phosphide raw materials and the inner wall of the quartz tube was solved, improving heating uniformity and synthesis quality. Furthermore, the use of ceramic filter plates to filter waste gas reduced environmental pollution and met the synthesis requirements of high-purity indium phosphide polycrystalline semiconductor materials.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHAANXI INDIUM JIE SEMICON CO LTD
- Filing Date
- 2025-07-30
- Publication Date
- 2026-05-29
AI Technical Summary
In the synthesis of large-size high-purity indium phosphide polycrystalline semiconductor materials, indium phosphide raw materials tend to adhere to the inner wall of the quartz tube, resulting in uneven heating and reducing the purity and quality of the synthesized product. At the same time, existing stirring or loosening methods are difficult to implement effectively and cannot meet the synthesis requirements of high-purity indium phosphide polycrystalline semiconductor materials.
It adopts a rotating mechanism and a feeding structure. The quartz tube is driven to rotate by a dual-axis motor and a feeding roller is set inside it. The feeding plate contacts the inner wall of the quartz tube to prevent the indium phosphide raw material from adhering. At the same time, a ceramic filter plate is used to filter the exhaust gas and remove impurities and harmful substances.
It improves heating efficiency and synthesis quality, reduces environmental pollution, and achieves efficient synthesis of high-purity indium phosphide polycrystalline semiconductor materials, possessing the advantages of high synthesis quality and strong practicality.
Smart Images
Figure CN224299451U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the technical field of indium phosphide production equipment, specifically a horizontal synthesis equipment for large-size, high-purity indium phosphide polycrystalline semiconductor materials. Background Technology
[0002] Indium phosphide (IP) is an important semiconductor material with significant applications in optical communication, millimeter-wave high-frequency, low-noise, and broadband microelectronic integration. IPP-based long-wavelength light-emitting diodes, lasers, and detectors are widely used in fiber optic communication systems. IPP-based heterojunction bipolar transistors and high-electron-mobility transistors are also used in next-generation high-speed communication systems. IPP is also one of the preferred materials in the terahertz field.
[0003] In the synthesis of large-size, high-purity indium phosphide polycrystalline semiconductor materials, a horizontally placed quartz tube is typically used as the reaction vessel. Heating causes the raw materials to undergo a chemical reaction to generate indium phosphide polycrystalline semiconductors. However, in existing synthesis equipment, indium phosphide raw materials tend to adhere to the inner wall of the quartz tube during heating. This adhesion not only leads to uneven heating of the raw materials, affecting heating efficiency, but also reduces the purity and quality of the synthesized product, increasing production costs. Furthermore, existing stirring or loosening methods are difficult to implement effectively within large-size, horizontally placed quartz tubes, failing to meet the high requirements for the synthesis of high-purity indium phosphide polycrystalline semiconductor materials. Therefore, a horizontal synthesis device for large-size, high-purity indium phosphide polycrystalline semiconductor materials is proposed to address the aforementioned problems. Utility Model Content
[0004] To address the shortcomings of existing technologies, this invention provides a horizontal synthesis device for large-size high-purity indium phosphide polycrystalline semiconductor materials. It has the advantages of high synthesis quality and strong practicality. It solves the problem that in existing synthesis equipment, indium phosphide raw materials are prone to adhesion to the inner wall of the quartz tube during heating. In addition, existing stirring or loosening methods are difficult to implement effectively in large-size horizontally placed quartz tubes, which cannot meet the high requirements for the synthesis of high-purity indium phosphide polycrystalline semiconductor materials.
[0005] To achieve the above objectives, this utility model provides the following technical solution: a horizontal synthesis device for large-size high-purity indium phosphide polycrystalline semiconductor materials, comprising a heating chamber, an air inlet pipe fixedly connected to one side of the top of the heating chamber, an air outlet pipe fixedly connected to the other side of the top of the heating chamber, and a quartz tube disposed inside the heating chamber. The heating chamber is provided with a rotating mechanism for rotating the quartz tube, and the outside of the quartz tube is provided with a material-loosening structure extending into its interior for loosening the indium phosphide raw material inside.
[0006] The rotating mechanism includes a mounting base fixedly installed on the inner wall of the heating box and a gear ring fixedly installed on the outside of the quartz tube. A dual-axis motor is fixedly installed inside the mounting base, and a transmission gear that meshes with the gear ring is fixedly connected to the output shaft at the right end of the dual-axis motor.
[0007] The feeding structure includes a rotating shaft rotatably connected inside the quartz tube and extending to the outside of the heating chamber. A feeding roller is fixedly connected to the outside of the rotating shaft. A driven wheel is fixedly installed at the left end of the rotating shaft. A synchronization structure is provided on the outside of the driven wheel.
[0008] Furthermore, the quartz tube is rotatably connected to the inside of the heating chamber via a gear ring, and the outer diameter of the quartz tube is adapted to the inner diameter of the heating chamber.
[0009] Furthermore, the synchronization structure includes a transmission wheel fixedly mounted on the left output shaft of the dual-axis motor. The transmission wheel and the driven wheel are externally connected by a synchronous belt. The rotating shaft is rotatably connected to the inside of the heating box and extends into the inside of the quartz tube via the synchronous belt.
[0010] Furthermore, four feeding plates are fixedly connected to the outside of the feeding roller. The four feeding plates are arranged in a ring shape on the outside of the feeding roller and abut against the inner wall of the quartz tube.
[0011] Furthermore, a limiting seat adapted to the rotating shaft is fixedly installed on the outside of the heating box, and a bearing adapted to the rotating shaft is fixedly installed inside the limiting seat.
[0012] Furthermore, a feed hopper extending into the quartz tube is fixedly connected to the right side of the heating box, and a flow guide seat is fixedly connected to the bottom of the heating box.
[0013] Furthermore, a heating wire is fixedly installed between the internal cavity of the heating box and the quartz tube, and a limiting ring is fixedly connected inside the heating box. Both ends of the quartz tube are rotatably connected to the inside of the limiting ring.
[0014] Furthermore, a filter box is fixedly connected to the top of the air outlet pipe, a ceramic filter plate is slidably connected inside the filter box, a handle is fixedly connected to the top of the ceramic filter plate, and a movable opening adapted to the ceramic filter plate is opened inside the filter box. There are two sets of both the ceramic filter plate and the handle.
[0015] Compared with the prior art, this utility model provides a horizontal synthesis device for large-size high-purity indium phosphide polycrystalline semiconductor materials, which has the following beneficial effects:
[0016] 1. This large-size, high-purity indium phosphide polycrystalline semiconductor material horizontal synthesis equipment uses a controller to start a dual-axis motor. The transmission gear on the right output shaft meshes with the gear ring, driving the quartz tube to rotate. The transmission wheel on the left output shaft of the dual-axis motor drives the driven wheel to rotate via a synchronous belt, which in turn drives the rotating shaft and the feeding roller to rotate inside the quartz tube. The feeding plate on the feeding roller rotates inside the quartz tube, loosening the indium phosphide raw material inside, reducing its adhesion to the inner wall of the quartz tube, improving heating efficiency and quality, and achieving the advantage of high synthesis quality.
[0017] 2. This large-size, high-purity indium phosphide polycrystalline semiconductor material horizontal synthesis equipment filters waste gas through ceramic filter plates in the filter box. The ceramic filter plates have good filtration performance and high temperature resistance, which can effectively remove impurities and harmful substances in the waste gas, reduce environmental pollution, and the ceramic filter plates can be easily pulled out for cleaning or replacement, making maintenance convenient and achieving the advantages of strong practicality. Attached Figure Description
[0018] Figure 1 This is a three-dimensional view of the structure of this utility model;
[0019] Figure 2 This is a three-dimensional cross-sectional view of the heating box, rotating mechanism, and feeding structure of this utility model.
[0020] Figure 3 This is a three-dimensional structural view of the filter box and ceramic filter plate of this utility model.
[0021] In the diagram: 1. Heating box; 2. Inlet pipe; 3. Outlet pipe; 4. Quartz tube; 5. Rotating mechanism; 51. Mounting base; 52. Dual-shaft motor; 53. Transmission gear; 54. Gear ring; 6. Feeding structure; 61. Rotating shaft; 62. Feeding roller; 63. Driven wheel; 64. Transmission wheel; 65. Synchronous belt; 7. Filter box; 8. Ceramic filter plate; 9. Handle; 10. Feed hopper; 11. Guide seat. Detailed Implementation
[0022] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0023] Please see Figures 1 to 3This embodiment of a horizontal synthesis device for large-size high-purity indium phosphide polycrystalline semiconductor material includes a heating chamber 1, an air inlet pipe 2 fixedly connected to one side of the top of the heating chamber 1, an air outlet pipe 3 fixedly connected to the other side of the top of the heating chamber 1, and a quartz tube 4 disposed inside the heating chamber 1. The heating chamber 1 is provided with a rotating mechanism 5 for rotating the quartz tube 4, and the quartz tube 4 is provided with a material-loosening structure 6 extending into its interior for loosening the indium phosphide raw material inside.
[0024] The rotating mechanism 5 includes a mounting base 51 fixedly installed on the inner wall of the heating chamber 1 and a gear ring 54 fixedly installed on the outside of the quartz tube 4. A dual-axis motor 52 is fixedly installed inside the mounting base 51, and a transmission gear 53 that meshes with the gear ring 54 is fixedly connected to the output shaft at the right end of the dual-axis motor 52. The quartz tube 4 is rotatably connected to the inside of the heating chamber 1 through the gear ring 54, and the outer diameter of the quartz tube 4 is adapted to the inner diameter of the heating chamber 1. When the dual-axis motor 52 is started by the controller, the output shaft at the right end of the dual-axis motor 52 drives the transmission gear 53 to rotate. Since the transmission gear 53 meshes with the gear ring 54 fixedly installed on the outside of the quartz tube 4, and the quartz tube 4 is rotatably connected to the inside of the heating chamber 1 through the gear ring 54, and its outer diameter is adapted to the inner diameter of the heating chamber 1, the rotation of the transmission gear 53 will drive the gear ring 54 to rotate, thereby causing the quartz tube 4 to rotate inside the heating chamber 1. The rotation of the quartz tube 4 allows the indium phosphide raw material inside to be heated more evenly.
[0025] Specifically, a feed hopper 10 extending into the quartz tube 4 is fixedly connected to the right side of the heating chamber 1, and a guide seat 11 is fixedly connected to the bottom of the heating chamber 1. A heating wire is fixedly installed between the internal cavity of the heating chamber 1 and the quartz tube 4. A limiting ring is fixedly connected inside the heating chamber 1, and both ends of the quartz tube 4 are rotatably connected to the inside of the limiting ring. The heating wire fixedly installed between the internal cavity of the heating chamber 1 and the quartz tube 4 is activated by the controller to heat the quartz tube 4. The limiting ring inside the heating chamber 1 supports and positions the quartz tube 4, ensuring that both ends of the quartz tube 4 can be stably rotatably connected to the inside of the limiting ring, thus guaranteeing the stability of the quartz tube 4 during the heating process.
[0026] It should be noted that by adding an air inlet pipe 2 and an air outlet pipe 3, an air pump can be connected to the air inlet pipe 2. By pumping air in through the air pump, it is convenient to blow air to clean the heating box 1 when it stops working, and to clean any residual waste or debris inside.
[0027] Please see Figures 1 to 2In this embodiment, the feeding structure 6 includes a rotating shaft 61 that is rotatably connected inside the quartz tube 4 and extends to the outside of the heating box 1. A feeding roller 62 is fixedly connected to the outside of the rotating shaft 61. A driven wheel 63 is fixedly installed at the left end of the rotating shaft 61. A synchronization structure is provided on the outside of the driven wheel 63.
[0028] The synchronization structure includes a transmission wheel 64 fixedly mounted on the output shaft of the left end of the dual-axis motor 52. The transmission wheel 64 and the driven wheel 63 are externally connected by a synchronous belt 65. The rotating shaft 61 is rotatably connected to the inside of the heating box 1 and extends into the inside of the quartz tube 4 through the synchronous belt 65.
[0029] Specifically, four feeding plates are fixedly connected to the outside of the feeding roller 62. The four feeding plates are arranged in a ring shape on the outside of the feeding roller 62 and abut against the inner wall of the quartz tube 4. A limiting seat adapted to the rotating shaft 61 is fixedly installed on the outside of the heating box 1. A bearing adapted to the rotating shaft 61 is fixedly installed inside the limiting seat. The transmission wheel 64 on the left output shaft of the dual-shaft motor 52 drives the driven wheel 63 to rotate through the synchronous belt 65, which in turn drives the rotating shaft 61 and the feeding roller 62 to rotate inside the quartz tube 4. The feeding plates on the feeding roller 62 rotate inside the quartz tube 4, loosening the indium phosphide raw material inside, reducing its adhesion to the inner wall of the quartz tube 4, and improving heating efficiency and quality.
[0030] Please see Figure 1 and Figure 3 In this embodiment, a filter box 7 is fixedly connected to the top of the exhaust pipe 3. A ceramic filter plate 8 is slidably connected inside the filter box 7, and a handle 9 is fixedly connected to the top of the ceramic filter plate 8. The filter box 7 has a movable opening adapted to the ceramic filter plate 8. There are two sets of both the ceramic filter plate 8 and the handle 9. The waste gas generated during the reaction enters the filter box 7 through the exhaust pipe 3, is filtered by the ceramic filter plate 8 to remove impurities and harmful substances, and is then discharged into the atmosphere. When the ceramic filter plate 8 needs cleaning or replacement, it can be pulled out from the movable opening using the handle 9.
[0031] The working principle of the above embodiments is as follows:
[0032] In operation, indium phosphide raw material is fed into the quartz tube 4 inside the heating chamber 1 via the feed hopper 10. The heating wire is activated by the controller, heating the interior of the heating chamber 1 to ensure that the temperature inside the quartz tube 4 reaches the high-temperature conditions required for synthesis. Argon as a protective gas and phosphine as a reactive gas are introduced into the heating chamber 1 through the gas inlet pipe 2 to ensure a stable gas environment during the synthesis process. The dual-shaft motor 52 is activated by the controller. The transmission gear 53 on its right output shaft meshes with the gear ring 54, driving the quartz tube 4 to rotate. The transmission wheel 64 on the left output shaft of the dual-shaft motor 52 drives the driven wheel 63 to rotate via the synchronous belt 65, which in turn drives the rotating shaft 61 and the feeding roller 62 to rotate inside the quartz tube 4. The feeding plate on the feeding roller 62 rotates inside the quartz tube 4, loosening the indium phosphide raw material inside and reducing its adhesion to the inner wall of the quartz tube 4, thus improving heating efficiency and quality. The waste gas generated during the synthesis process enters the filter box 7 through the exhaust pipe 3. Inside the filter box 7, the waste gas is filtered through the ceramic filter plate 8, which can adsorb harmful substances in the waste gas and reduce environmental pollution. The filtered waste gas is discharged into the environment through the outlet of the filter box 7. After the synthesis is completed, the heating wire and gas supply are stopped, and the synthesized indium phosphide polycrystalline material is discharged through the guide seat 11.
[0033] The installation, connection, or setting methods disclosed in this embodiment are all common mechanical connection methods, and any method that achieves the desired beneficial effect can be implemented. Furthermore, all electrical components in this embodiment are electrically connected to the main controller and power supply. The main controller can be a conventional, known device such as a computer that performs control functions. Those skilled in the art can control the electrical components through simple programming, and the existing disclosed power connection technologies are common knowledge in the field. Therefore, this embodiment will not elaborate further on their specific structural composition and working principles.
[0034] It should be noted that the orientations or positional relationships indicated herein are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the purpose of facilitating the description of this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0035] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0036] Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.
Claims
1. A horizontal synthesis apparatus for large-size, high-purity indium phosphide polycrystalline semiconductor materials, characterized in that: It includes a heating box (1), an air inlet pipe (2) fixedly connected to one side of the top of the heating box (1), an air outlet pipe (3) fixedly connected to the other side of the top of the heating box (1), and a quartz tube (4) disposed inside the heating box (1). The heating box (1) is provided with a rotating mechanism (5) for rotating the quartz tube (4), and the quartz tube (4) is provided with a material-loosening structure (6) extending into its interior to loosen the indium phosphide raw material inside. The rotating mechanism (5) includes a mounting base (51) fixedly installed on the inner wall of the heating box (1) and a gear ring (54) fixedly installed on the outside of the quartz tube (4). A dual-axis motor (52) is fixedly installed inside the mounting base (51), and a transmission gear (53) that meshes with the gear ring (54) is fixedly connected to the output shaft at the right end of the dual-axis motor (52). The feeding structure (6) includes a rotating shaft (61) rotatably connected inside the quartz tube (4) and extending to the outside of the heating box (1). A feeding roller (62) is fixedly connected to the outside of the rotating shaft (61). A driven wheel (63) is fixedly installed at the left end of the rotating shaft (61). A synchronization structure is provided on the outside of the driven wheel (63).
2. The horizontal synthesis equipment for large-size high-purity indium phosphide polycrystalline semiconductor materials according to claim 1, characterized in that: The quartz tube (4) is rotatably connected to the inside of the heating box (1) via a gear ring (54), and the outer diameter of the quartz tube (4) is adapted to the inner diameter of the heating box (1).
3. The horizontal synthesis equipment for large-size high-purity indium phosphide polycrystalline semiconductor materials according to claim 1, characterized in that: The synchronization structure includes a transmission wheel (64) fixedly installed on the output shaft at the left end of the dual-axis motor (52). The transmission wheel (64) and the driven wheel (63) are externally connected by a synchronous belt (65). The rotating shaft (61) is rotatably connected to the inside of the heating box (1) and extends into the inside of the quartz tube (4) via the synchronous belt (65).
4. The horizontal synthesis equipment for large-size high-purity indium phosphide polycrystalline semiconductor materials according to claim 1, characterized in that: The material feeding roller (62) is fixedly connected to four feeding plates. The four feeding plates are arranged in a ring shape on the outside of the material feeding roller (62) and abut against the inner wall of the quartz tube (4).
5. The horizontal synthesis equipment for large-size high-purity indium phosphide polycrystalline semiconductor materials according to claim 1, characterized in that: The heating box (1) is externally fixedly equipped with a limiting seat adapted to the rotating shaft (61), and the limiting seat is internally fixedly equipped with a bearing adapted to the rotating shaft (61).
6. The horizontal synthesis equipment for large-size high-purity indium phosphide polycrystalline semiconductor materials according to claim 1, characterized in that: The right side of the heating box (1) is fixedly connected to a feed hopper (10) extending into the quartz tube (4), and the bottom of the heating box (1) is fixedly connected to a flow guide seat (11).
7. The horizontal synthesis equipment for large-size high-purity indium phosphide polycrystalline semiconductor materials according to claim 1, characterized in that: A heating wire is fixedly installed between the internal cavity of the heating box (1) and the quartz tube (4). A limiting ring is fixedly connected inside the heating box (1), and both ends of the quartz tube (4) are rotatably connected to the inside of the limiting ring.
8. The horizontal synthesis equipment for large-size high-purity indium phosphide polycrystalline semiconductor materials according to claim 1, characterized in that: The top of the air outlet pipe (3) is fixedly connected to a filter box (7), and a ceramic filter plate (8) is slidably connected inside the filter box (7). A handle (9) is fixedly connected to the top of the ceramic filter plate (8). The filter box (7) has a movable opening that matches the ceramic filter plate (8). There are two sets of ceramic filter plates (8) and handles (9).