Solar cells and photovoltaic modules
By alternating different types of doped regions in the doped layer of the solar cell and increasing the number of first grid lines, the problem of reduced carrier collection capacity caused by the increase in the area ratio of P-type doped regions is solved, thereby improving the power generation efficiency of the cell and the overall performance of the photovoltaic module.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- 扬州阿特斯太阳能电池有限公司
- Filing Date
- 2025-05-22
- Publication Date
- 2026-06-02
AI Technical Summary
In existing back-contact solar cells, the increased area of the P-type doped region leads to a weakening of carrier collection ability, an increase in series resistance, and consequently a decrease in fill factor and a reduction in cell power generation efficiency.
In the doped layer of a solar cell, alternating first and second doped regions are used to increase the area ratio of the first doped region. By increasing the number of first grid lines in the first doped region, the distance between the charge carriers and the grid lines is shortened, thereby improving the charge carrier collection capability.
It improves carrier collection efficiency, enhances solar cell power generation efficiency, reduces power generation costs, and promotes the sustainable development of the photovoltaic industry.
Smart Images
Figure CN224319811U_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of photovoltaic technology, and in particular relates to a solar cell and a photovoltaic module. Background Technology
[0002] A solar cell is a semiconductor structure that directly generates electricity using sunlight. One type of solar cell (such as a back-contact solar cell) is characterized by placing the positive and negative electrodes and the PN junction (the interface formed by the contact of P-type and N-type semiconductors) on the back side of the cell (the backlight side), while the front side (the light-receiving side) is unobstructed. This design maximizes the use of incident light and reduces optical losses, thereby improving the cell's conversion efficiency.
[0003] In solar cells, taking an N-type substrate as an example, the P-type doped region is the hole collection region, and the N-type doped region is the electron collection region. Ideally, the larger the area of the P-type doped region, that is, the higher the area of the PN junction region, the stronger the carrier collection efficiency and the higher the power generation efficiency of the cell.
[0004] However, due to the increased area of the P-type doped region, the ability of the grid lines in the P-type doped region to collect carriers in the P-type doped region is weakened in practice, resulting in an increase in series resistance, which in turn leads to a further decrease in the fill factor and a decrease in battery power generation efficiency. Utility Model Content
[0005] This application aims to address at least one of the technical problems existing in the related art. To this end, this application proposes a solar cell and photovoltaic module that enables charge carriers to be collected and transported away by the first grid line as close as possible and as quickly as possible, thereby improving the charge carrier collection capability and thus improving the power generation efficiency of the cell.
[0006] In a first aspect, this application provides a solar cell, comprising:
[0007] The substrate includes a light-receiving surface and a back-lighting surface that are positioned opposite to each other;
[0008] A doped layer is disposed on the back surface of the substrate, having a first doped region and a second doped region. The first doped region includes a plurality of finger-shaped first doped sub-regions, and the second doped region includes a plurality of finger-shaped second doped sub-regions. The plurality of first doped sub-regions and the plurality of second doped sub-regions are arranged alternately along a first direction parallel to the substrate. The size of the first doped sub-region along the first direction is larger than the size of the second doped sub-region along the first direction. The doping type of the second doped region is opposite to that of the first doped region.
[0009] A plurality of first gate lines are provided, and the first gate line extending along a second direction is correspondingly provided on the side of the first doped subregion away from the substrate; the second direction is parallel to the substrate and perpendicular to the first direction;
[0010] Multiple second gate lines are provided, with the second gate line extending along the second direction corresponding to the side of the second doped subregion away from the substrate;
[0011] In this embodiment, each of the first doped sub-regions is provided with at least two first gate lines arranged at intervals along the first direction.
[0012] According to the solar cell provided in this application, the substrate includes a light-receiving surface and a back-lighting surface disposed opposite to each other. The doped layer is disposed on the back-lighting surface of the substrate, without obstructing the light-receiving surface, which maximizes the utilization of incident light, reduces optical loss, and thus improves the conversion efficiency of the cell. The doped layer includes a first doped region and a second doped region with different doping types. The first doped sub-regions of the first doped region and the second doped sub-regions of the second doped region are arranged in an interdigitated pattern. In this embodiment, while keeping the area of the doped layer constant, the area ratio of the first doped region is increased by making the size of the first doped sub-region along the first direction larger than that of the second doped sub-region along the first direction, thereby improving the carrier collection efficiency. Moreover, the first grid line is used to collect carriers from the first doped region, and the second grid line is used to collect carriers from the second doped region. In this embodiment, by increasing the number of first grid lines in the first doped sub-region, the distance between the carriers diffused in the first doped sub-region and the first grid line is shortened, so that the carriers are collected and transported out by the first grid line as close as possible and as fast as possible, thereby improving the carrier collection capability and thus improving the power generation efficiency of the solar cell.
[0013] According to one embodiment of this application, the dimension of the first doped sub-region along the first direction is D1, and D1 is positively correlated with the number of the first gate lines corresponding to the first doped sub-region.
[0014] According to one embodiment of this application, a plurality of first gate lines corresponding to the first doped sub-region are arranged at equal intervals;
[0015] The distance between the outermost first gate line and the edge of the first doped sub-region is D2, and the distance between adjacent first gate lines is D3; D3 = 2D2.
[0016] According to one embodiment of this application, the arrangement of the first gate lines is the same in each of the first doped subregions;
[0017] Each of the second doped sub-regions is provided with a second gate line, and the second gate line passes through the center point of the second doped sub-region.
[0018] According to one embodiment of this application, the spacing between the center points of adjacent first doped sub-regions is D4, the spacing between the first gate lines in the same position within adjacent first doped sub-regions is D5, and the spacing between the center points of adjacent second doped sub-regions is D6; D4 = D5 = D6.
[0019] According to one embodiment of this application, 1.0 mm ≤ D4 ≤ 1.2 mm; and / or,
[0020] 0.3 mm ≤ D3 ≤ 0.4 mm; and / or,
[0021] The spacing between the first gate lines that are close to each other in adjacent first doped subregions is D7, where 0.7 mm ≤ D7 ≤ 0.8 mm.
[0022] According to one embodiment of this application, along the first direction, the size of a single first gate line is smaller than the size of a single second gate line.
[0023] According to one embodiment of this application, along the first direction, the linewidth of the first gate line is not less than 12 micrometers and not more than 35 micrometers;
[0024] The linewidth of the second gate line is not less than 15 micrometers and not more than 40 micrometers.
[0025] According to one embodiment of this application, the first doped region further includes a third doped sub-region extending along the first direction, the third doped sub-region being connected to a plurality of the first doped sub-regions respectively; the second doped region further includes a fourth doped sub-region extending along the first direction, the fourth doped sub-region being connected to a plurality of the second doped sub-regions respectively.
[0026] The solar cell also includes:
[0027] A first connecting gate line is disposed on the side of the third doped subregion away from the substrate and extends along the first direction; each of the first gate lines is electrically connected to the first connecting gate line;
[0028] The second connecting gate line is disposed on the side of the fourth doped subregion away from the substrate and extends along the first direction; each of the second gate lines is electrically connected to the second connecting gate line.
[0029] Secondly, this application provides a photovoltaic module, including any of the solar cells provided in the first aspect above.
[0030] According to the photovoltaic module of this application, the size of the first doped region along the first direction of at least one cell is larger than the size of the second doped region along the first direction, thereby increasing the area ratio of the first doped region and thus improving the carrier collection efficiency. Furthermore, by increasing the number of first grid lines in the first doped region, the embodiments of this application shorten the distance between the diffused carriers in the first doped region and the first grid lines, enabling the carriers to be collected and transported by the first grid lines as close and faster as possible. This improves the carrier collection capability, increases the power generation efficiency of the solar cell, thereby improving the power generation efficiency of the photovoltaic module, reducing power generation costs, and contributing to the sustainable development of the photovoltaic industry.
[0031] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description
[0032] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:
[0033] Figure 1 This is a schematic diagram of the structure of a solar cell provided in an embodiment of this application.
[0034] Figure label:
[0035] 100-doped layer;
[0036] 110 - First doped region; 111 - First doped sub-region; 112 - Third doped sub-region;
[0037] 120 - Second doped region; 121 - Second doped sub-region; 122 - Fourth doped sub-region;
[0038] 200 - First gate line; 300 - First connecting gate line;
[0039] 400 - Second grid line; 500 - Second connecting grid line;
[0040] 600 - First contact pad; 700 - Second contact pad;
[0041] 800-spacer layer;
[0042] X - First direction. Detailed Implementation
[0043] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.
[0044] The following is for reference. Figure 1 A solar cell according to an embodiment of this application is described, comprising: a substrate, a doped layer 100, a plurality of first grid lines 200 and a plurality of second grid lines 400.
[0045] The substrate includes a light-receiving surface and a back-lighting surface that are positioned opposite each other.
[0046] A doped layer 100 is disposed on the back surface of a substrate and has a first doped region 110 and a second doped region 120. The first doped region 110 includes a plurality of finger-shaped first doped sub-regions 111, and the second doped region 120 includes a plurality of finger-shaped second doped sub-regions 121. The plurality of first doped sub-regions 111 and the plurality of second doped sub-regions 121 are arranged alternately along a first direction X parallel to the substrate. The size of the first doped sub-region 111 along the first direction X is larger than the size of the second doped sub-region 121 along the first direction X. The doping type of the second doped region 120 is opposite to that of the first doped region 110.
[0047] A first gate line 200 extending along a second direction is provided on the side of the first doped region 111 away from the substrate; the second direction is parallel to the substrate and perpendicular to the first direction X.
[0048] A second gate line 400 extending along the second direction is provided on the side of the second doped region 121 away from the substrate.
[0049] In this embodiment, each of the first doped sub-regions 111 is provided with at least two first gate lines 200 arranged at intervals along the first direction X.
[0050] According to the solar cell provided in this application, the substrate includes a light-receiving surface and a back-lighting surface disposed opposite to each other. The doped layer 100 is disposed on the back-lighting surface of the substrate, without obstructing the light-receiving surface, thereby maximizing the utilization of incident light, reducing optical losses, and improving the conversion efficiency of the cell. The doped layer 100 includes a first doped region 110 and a second doped region 120 with different doping types. The first doped sub-regions 111 of the first doped region 110 and the second doped sub-regions 121 of the second doped region 120 are arranged in an interdigitated pattern. In this embodiment, while keeping the area of the doped layer 100 constant, the area ratio of the first doped region 110 is increased by making the size of the first doped sub-region 111 along the first direction X larger than the size of the second doped sub-region 121 along the first direction X, thereby improving the carrier collection efficiency. Furthermore, the first grid line 200 is used to collect the carriers in the first doped region 110, and the second grid line 400 is used to collect the carriers in the second doped region 120. In this embodiment, by increasing the number of first grid lines 200 in the first doped region 111, the distance between the carriers diffused in the first doped region 111 and the first grid line 200 is shortened, thereby enabling the carriers to be collected and transported by the first grid line 200 as close as possible and as fast as possible, which can improve the carrier collection capability and thus improve the power generation efficiency of the solar cell.
[0051] It should be noted that there are multiple first doped sub-regions 111. One first doped sub-region 111 may have at least two first gate lines 200, while the other first doped sub-regions 111 may have one first gate line 200. Alternatively, each of the multiple first doped sub-regions 111 may have at least two first gate lines 200 spaced apart along the first direction X, while the remaining first doped sub-regions 111 may each have one first gate line 200. Or, each first doped sub-region 111 may have multiple first gate lines 200. In this embodiment, providing multiple first gate lines 200 for at least one first doped sub-region 111 can improve the carrier collection capability of the first doped sub-region 111, thereby improving the overall power generation efficiency of the solar cell.
[0052] The solar cell can be at least one of the following structural forms:
[0053] Firstly, the first doping region 110 is P-type doped, the second doping region 120 is N-type doped, and the substrate is an N-type substrate.
[0054] Secondly, the first doping region 110 is N-type doped, the second doping region 120 is P-type doped, and the substrate is a P-type substrate.
[0055] It should be noted that the specific interpretations of P-type doping and N-type doping are consistent with the relevant technologies, and will not be repeated here.
[0056] In some embodiments, the solar cell further includes a spacer layer 800 that separates the first doped region 110 and the second doped region 120.
[0057] In some embodiments, such as Figure 1 As shown, the size of the first doped sub-region 111 along the first direction X is D1, and D1 is positively correlated with the number of first gate lines 200 corresponding to the first doped sub-region 111.
[0058] In this embodiment, while keeping the planar dimensions of the battery unchanged, as the size D1 of each first doped region 111 along the first direction X increases, the number of first grid lines 200 is increased to shorten the distance between the diffused charge carriers and the first grid lines 200 as much as possible, thereby improving the collection efficiency of the first grid lines 200 for charge carriers and improving the power generation efficiency of the solar cell.
[0059] It should be noted that, while keeping the planar dimensions of the battery unchanged, the dimension D1 of the first doped sub-region 111 along the first direction X can be considered as the width of the first doped sub-region 111. The first doped sub-region 111 is roughly rectangular, and its width is positively correlated with its area. The larger the dimension D1 of the first doped sub-region 111 along the first direction X, the larger the area of the first doped sub-region 111, and the larger its area ratio. Correspondingly, the smaller the dimension D8 of the second doped sub-region 121 along the first direction X, the smaller the area of the second doped sub-region 121, and the smaller its area ratio.
[0060] In some embodiments, such as Figure 1 As shown, the first doped sub-region 111 corresponds to a plurality of first gate lines 200 arranged at equal intervals;
[0061] The distance between the outermost first gate line 200 (i.e. the first gate line 200 closest to the edge of the first doped sub-region 111) and the edge of the first doped sub-region 111 is D2, and the distance between adjacent first gate lines 200 is D3; D3 = 2D2.
[0062] In this embodiment, multiple first grid lines 200 are uniformly arranged in the first doped sub-region 111. Specifically, it can be assumed that the number of first grid lines 200 is n, and the first doped sub-region 111 is divided into n equal parts along the first direction X. The first grid lines 200 are correspondingly arranged at the center of each equal part of the first doped sub-region 111, so that the distance between the outermost first grid line 200 and the edge of the first doped sub-region 111 is half the dimension of the first doped sub-region 111 along the first direction X, and the distance between adjacent first grid lines 200 is the same as the dimension of the first doped sub-region 111 along the first direction X. In this embodiment, the uniformly arranged first grid lines 200 can balance the distance between the diffused charge carriers and the first grid lines 200, and can make each charge carrier have a first grid line 200 that is as close as possible, reducing the non-uniformity of local current density, thereby improving the power generation efficiency of the solar cell.
[0063] For example, each first doped sub-region 111 is provided with two first gate lines 200. The two first gate lines 200 are evenly arranged in the first doped sub-region 111, and the distance D2 between the outermost first gate line 200 and the edge of the first doped sub-region 111 is equal to half of the distance D3 between adjacent first gate lines 200.
[0064] In some embodiments, such as Figure 1 As shown, the arrangement of the first gate lines 200 is the same in each of the first doped regions 111.
[0065] Each second doped sub-region 121 is provided with a second gate line 400, which passes through the center point of the second doped sub-region 121.
[0066] In this embodiment, the layout of the first gate lines 200 corresponding to each first doped sub-region 111 is the same, that is, the number of first gate lines 200 is the same, and their corresponding positions within their respective first doped sub-regions 111 are also the same. This embodiment uses consistent process parameters across multiple first doped sub-regions 111, which can reduce process complexity and improve manufacturing efficiency.
[0067] In some embodiments, such as Figure 1 As shown, the spacing between the center points of adjacent first doped sub-regions 111 is D4, the spacing between the first gate lines 200 in the same position within adjacent first doped sub-regions 110 is D5, and the spacing between the center points of adjacent second doped sub-regions 120 is D6; D4 = D5 = D6.
[0068] In this embodiment, the spacing D4 between the center points of adjacent first doped sub-regions 111 can be understood as the interdigital spacing. In this embodiment, the first doped sub-regions 111 and the second doped sub-regions 121 are uniformly alternated, such that the spacing D4 between the center points of adjacent first doped sub-regions 111 is the same as the spacing D6 between the center points of adjacent second doped sub-regions 121. That is, along the first direction X, the interdigital spacing remains consistent, D4 = D6. Furthermore, the layout of the first gate lines 200 in all first doped sub-regions 111 is identical, thus ensuring that the spacing D5 between the first gate lines 200 in the same position within adjacent first doped sub-regions 111 is also consistent with the interdigital spacing. This guarantees that the first gate lines 200 in each first doped sub-region 111 are uniformly distributed, uniformly collecting charge carriers and reducing the non-uniformity of local current density.
[0069] It should be noted that, as Figure 1 As shown, since the shape of each first doped sub-region 111 is regular, the spacing D4 between the center points of adjacent first doped sub-regions 111 is equal to the spacing between the edges of adjacent first doped sub-regions 111 that are in the same position (such as the spacing between the left edges of adjacent first doped sub-regions 111), and also equal to the spacing D5 between the first gate lines 200 that are in the same position of adjacent first doped sub-regions 111 (such as the spacing between the first gate lines 200 on the left side of adjacent first doped sub-regions 111), and also equal to the sum of the width D1 of the first doped sub-region 111, the width D8 of the second doped sub-region 121, and the width of the two spacer layers 800.
[0070] like Figure 1 As shown, the spacing between the first gate lines 200 in the same position within adjacent first doped sub-regions 111 is D5, the spacing between adjacent first gate lines 200 within the same first doped sub-region 111 is D3, and the spacing between the first gate lines 200 in adjacent first doped sub-regions 111 that are close to each other is D7, where D5 = D3 + D7.
[0071] This application also provides a specific embodiment in which D4 = D6 = 1.1 mm, D3 = 0.36 mm, D7 = 0.74 mm, D1 = 0.72 mm, D8 = 0.2 mm, and the width of a single spacer layer is 0.09 mm.
[0072] It should be noted that when calculating the spacing between any two grid lines, the beginning and end points indicate the same position on both grid lines. For example, both the beginning and end point to the left edge of the two grid lines, or both point to the center line of the two grid lines, or both point to the right edge of the two grid lines. Furthermore, since the grid lines are relatively thin, their width can be ignored when calculating the spacing.
[0073] In some embodiments, 1.0 mm ≤ D4 ≤ 1.2 mm, for example, 1.1 mm.
[0074] In some embodiments, 0.3 mm ≤ D3 ≤ 0.4 mm, for example 0.36 mm.
[0075] In some embodiments, the spacing between adjacent first gate lines 200 in adjacent first doped sub-regions 111 is D7, where 0.7 mm ≤ D7 ≤ 0.8 mm. For example, 0.74 mm.
[0076] In some embodiments, along the first direction X, the size of a single first gate line 200 is smaller than the size of a single second gate line 400.
[0077] In this embodiment, by appropriately increasing the number of first gate lines 200, the size of a single first gate line 200 along the first direction X can be appropriately reduced, that is, the width of the first gate line 200 can be reduced. This allows for the optimization of gate line design and manufacturing process while maintaining a low resistance, thereby reducing the amount of silver paste used, thus reducing wet weight and cost, while ensuring that the first gate line 200 has the required carrier collection capability.
[0078] In some embodiments, along the first direction X, the linewidth of the first gate line 200 is not less than 12 micrometers and not more than 35 micrometers.
[0079] The linewidth of the second gate line 400 is not less than 15 micrometers and not more than 40 micrometers.
[0080] In this embodiment, the linewidth of the first gate line 200 is controlled between 12 micrometers and 35 micrometers, and the linewidth of the second gate line 400 is controlled between 15 micrometers and 40 micrometers. This can reduce the amount of silver paste used while maintaining low resistance, and also improve the power generation efficiency of the battery.
[0081] In some embodiments, the first doped region 110 further includes a third doped sub-region 112 extending along the first direction X, the third doped sub-region 112 being connected to a plurality of first doped sub-regions 111 respectively; the second doped region 120 further includes a fourth doped sub-region 122 extending along the first direction X, the fourth doped sub-region 122 being connected to a plurality of second doped sub-regions 121 respectively.
[0082] The solar cell also includes: a first connecting grid line 300 and a second connecting grid line 500.
[0083] The first connecting gate line 300 is disposed on the side of the third doped subregion 112 away from the substrate and extends along the first direction X; each first gate line 200 is electrically connected to the first connecting gate line 300.
[0084] The second connecting gate line 500 is disposed on the side of the fourth doped subregion 122 away from the substrate and extends along the first direction X; each second gate line 400 is electrically connected to the second connecting gate line 500.
[0085] In this embodiment, the first gate line 200 is used to collect photogenerated carriers from the first doped region 110 and transfer them to the first connecting gate line 300. The first connecting gate line 300 is used to collect the current transferred by each of the first gate lines 200 and connect to an external circuit. The first connecting gate line 300 is located on the side of the third doped sub-region 112 away from the substrate, that is, at the edge of the first doped region 110, which eliminates the need for additional planar space and facilitates manufacturing. Similarly, the second gate line 400 is used to collect photogenerated carriers from the second doped region 120 and transfer them to the second connecting gate line 500. The second connecting gate line 500 is used to collect the current transferred by each of the second gate lines 400 and connect to an external circuit. The second connecting gate line 500 is located on the side of the fourth doped sub-region 122 away from the substrate, that is, at the edge of the second doped region 120.
[0086] In some embodiments, the first connecting gate line 300 may be a continuous connecting gate line or a series of disconnected connecting gate lines, with each connecting gate line connecting multiple first gate lines 200.
[0087] In some embodiments, the second connecting gate line 500 may be a continuous connecting gate line or a series of disconnected connecting gate lines, with each connecting gate line connecting multiple second gate lines 400.
[0088] In some embodiments, the solar cell further includes: at least one first contact pad 600 located at the junction between at least one first grid line 200 and a first connecting grid line 300. It also includes at least one second contact pad 700 located at the junction between at least one second grid line 400 and a second connecting grid line 500.
[0089] It should be noted that the number of the first contact pad 600 and the second contact pad 700 can be determined according to the actual situation, and there is no limit here.
[0090] In some embodiments, the thickness of the first gate line 200 is not less than 6 micrometers and not more than 10 micrometers, and the thickness of the second gate line 400 is not less than 6 micrometers and not more than 10 micrometers.
[0091] The following describes the embodiments of this application in detail using specific experimental data, taking the first doping region 110 as having P-type doping, the second doping region 120 as having N-type doping, and the substrate as an N-type substrate.
[0092]
[0093] Table 1
[0094] In Table 1:
[0095] Pitch is the spacing between the center points of adjacent first doped sub-regions 111, and also... Figure 1 The spacing D6 between the center points of adjacent second doped subregions 121;
[0096] The N-region linewidth refers to the linewidth of the second gate line 400 of the second doped subregion 121 along the first direction X;
[0097] The P-region linewidth refers to the linewidth of the first gate line 200 of the first doped subregion 111 along the first direction X;
[0098] Voc refers to open-circuit voltage;
[0099] Jsc refers to current density;
[0100] FF refers to the fill factor;
[0101] pFF refers to the partial fill factor;
[0102] ETA refers to the efficiency of a solar cell in converting sunlight into electrical energy.
[0103] As shown in Table 1, the related technology has a scheme where the first doped sub-region 111 has only one first gate line 200, while this application has a scheme where the first doped sub-region 111 has multiple first gate lines 200. Table 1 shows that by increasing the number of first gate lines 200 in the first doped sub-region 111 and reducing the P-region linewidth, compared with the related technology, while keeping the pitch constant, the difference in open-circuit voltage and current density is not significant, but the fill factor is significantly increased. The efficiency of the solar cell in converting sunlight into electrical energy also increases by 0.1%. This indicates that the solar cell provided in this application provides an output power closer to the theoretical maximum value under actual operating conditions, thereby improving the overall conversion efficiency of the cell and reducing resistance loss.
[0104] The embodiments of this application will be described in detail below from two implementation perspectives.
[0105] I. This application provides a solar cell, including: a substrate, a doped layer 100, a plurality of first grid lines 200 and a plurality of second grid lines 400.
[0106] The substrate includes a light-receiving surface and a back-lighting surface that are positioned opposite each other.
[0107] A doped layer 100 is disposed on the back surface of a substrate and has a first doped region 110 and a second doped region 120. The first doped region 110 includes a plurality of finger-shaped first doped sub-regions 111, and the second doped region 120 includes a plurality of finger-shaped second doped sub-regions 121. The plurality of first doped sub-regions 111 and the plurality of second doped sub-regions 121 are arranged alternately along a first direction X parallel to the substrate. The size of the first doped sub-region 111 along the first direction X is larger than the size of the second doped sub-region 121 along the first direction X. The doping type of the first doped region 110 is P-type doping, the doping type of the second doped region 120 is N-type doping, and the substrate is an N-type substrate.
[0108] A first gate line 200 extending along a second direction is provided on the side of the first doped region 111 away from the substrate; the second direction is parallel to the substrate and perpendicular to the first direction X.
[0109] A second gate line 400 extending along the second direction is provided on the side of the second doped region 121 away from the substrate.
[0110] In this embodiment, each of the first doped sub-regions 111 is provided with at least two first gate lines 200 arranged at intervals along the first direction X.
[0111] According to one embodiment of this application, the size of the first doped sub-region 110 along the first direction X is D1, and D1 is positively correlated with the number of first gate lines 200 corresponding to the first doped sub-region 110.
[0112] According to one embodiment of this application, a plurality of first gate lines 200 are equally spaced in the first doped sub-region 110.
[0113] The distance between the outermost first gate line 200 and the edge of the first doped subregion 110 is D2, and the distance between adjacent first gate lines 200 is D3; D3 = 2D2.
[0114] According to one embodiment of this application, the arrangement of the first gate lines 200 is the same in each of the first doped subregions 110.
[0115] Each second doped sub-region 121 is provided with a second gate line 400, which passes through the center point of the second doped sub-region 121.
[0116] According to one embodiment of this application, the spacing between the center points of adjacent first doped sub-regions 110 is D4, the spacing between the first gate lines 200 in the same position within adjacent first doped sub-regions 110 is D5, and the spacing between the center points of adjacent second doped sub-regions 121 is D6; D4 = D5 = D6.
[0117] According to one embodiment of this application, 1.0 mm ≤ D4 ≤ 1.2 mm.
[0118] According to one embodiment of this application, 0.3 mm ≤ D3 ≤ 0.4 mm.
[0119] According to one embodiment of this application, the spacing between adjacent first gate lines 200 that are close to each other in adjacent first doped sub-regions 110 is D7, where 0.7 mm ≤ D7 ≤ 0.8 mm.
[0120] According to one embodiment of this application, along a first direction X, the size of a single first gate line 200 is smaller than the size of a single second gate line 400.
[0121] According to one embodiment of this application, along the first direction X, the linewidth of the first gate line 200 is not less than 12 micrometers and not more than 35 micrometers.
[0122] The linewidth of the second gate line 400 is not less than 15 micrometers and not more than 40 micrometers.
[0123] According to one embodiment of this application, the first doped region 110 further includes a third doped sub-region 112 extending along the first direction X, and the third doped sub-region 112 is connected to a plurality of first doped sub-regions 111 respectively; the second doped region 120 further includes a fourth doped sub-region 122 extending along the first direction X, and the fourth doped sub-region 122 is connected to a plurality of second doped sub-regions 121 respectively.
[0124] Solar cells also include:
[0125] The first connecting gate line 300 is disposed on the side of the third doped subregion 112 away from the substrate and extends along the first direction X; each first gate line 200 is electrically connected to the first connecting gate line 300.
[0126] The second connecting gate line 500 is disposed on the side of the fourth doped subregion 122 away from the substrate and extends along the first direction X; each second gate line 400 is electrically connected to the second connecting gate line 500.
[0127] II. This application provides a solar cell, including: a substrate, a doped layer 100, a plurality of first grid lines 200 and a plurality of second grid lines 400.
[0128] The substrate includes a light-receiving surface and a back-lighting surface that are positioned opposite each other.
[0129] A doped layer 100 is disposed on the back surface of a substrate and has a first doped region 110 and a second doped region 120. The first doped region 110 includes a plurality of finger-shaped first doped sub-regions 111, and the second doped region 120 includes a plurality of finger-shaped second doped sub-regions 121. The plurality of first doped sub-regions 111 and the plurality of second doped sub-regions 121 are arranged alternately along a first direction X parallel to the substrate. The size of the first doped sub-region 111 along the first direction X is larger than the size of the second doped sub-region 121 along the first direction X. The doping type of the first doped region 110 is N-type doping, the doping type of the second doped region 120 is P-type doping, and the substrate is a P-type substrate.
[0130] A first gate line 200 extending along a second direction is provided on the side of the first doped region 111 away from the substrate; the second direction is parallel to the substrate and perpendicular to the first direction X.
[0131] A second gate line 400 extending along the second direction is provided on the side of the second doped region 121 away from the substrate.
[0132] In this embodiment, each of the first doped sub-regions 111 is provided with at least two first gate lines 200 arranged at intervals along the first direction X.
[0133] According to one embodiment of this application, the first doped sub-region 111 has a dimension D1 along a first direction, and D1 is positively correlated with the number of first gate lines 200 corresponding to the first doped sub-region 111.
[0134] According to one embodiment of this application, a plurality of first gate lines 200 are equally spaced in the first doped sub-region 110.
[0135] The distance between the outermost first gate line 200 and the edge of the first doped subregion 110 is D2, and the distance between adjacent first gate lines 200 is D3; D3 = 2D2.
[0136] According to one embodiment of this application, the arrangement of the first gate lines 200 is the same in each of the first doped subregions 111.
[0137] Each second doped sub-region 121 is provided with a second gate line 400, which passes through the center point of the second doped sub-region 120.
[0138] According to one embodiment of this application, the spacing between the center points of adjacent first doped sub-regions 111 is D4, the spacing between the first gate lines 200 in the same position within adjacent first doped sub-regions 111 is D5, and the spacing between the center points of adjacent second doped sub-regions 121 is D6; D4 = D5 = D6.
[0139] According to one embodiment of this application, 1.0 mm ≤ D4 ≤ 1.2 mm.
[0140] According to one embodiment of this application, 0.3 mm ≤ D3 ≤ 0.4 mm.
[0141] According to one embodiment of this application, 0.7 mm ≤ D7 ≤ 0.8 mm.
[0142] According to one embodiment of this application, along a first direction X, the size of a single first gate line 200 is smaller than the size of a single second gate line 400.
[0143] According to one embodiment of this application, along the first direction X, the linewidth of the first gate line 200 is not less than 12 micrometers and not more than 35 micrometers.
[0144] The linewidth of the second gate line 200 is not less than 15 micrometers and not more than 40 micrometers.
[0145] According to one embodiment of this application, the first doped region 110 further includes a third doped sub-region 112 extending along the first direction X, and the third doped sub-region 112 is connected to a plurality of first doped sub-regions 111 respectively; the second doped region 120 further includes a fourth doped sub-region 122 extending along the first direction X, and the fourth doped sub-region 122 is connected to a plurality of second doped sub-regions 121 respectively.
[0146] Solar cells also include:
[0147] The first connecting gate line 300 is disposed on the side of the third doped subregion 112 away from the substrate and extends along the first direction X; each first gate line 200 is electrically connected to the first connecting gate line 300.
[0148] The second connecting gate line 500 is disposed on the side of the fourth doped subregion 122 away from the substrate and extends along the first direction X; each second gate line 400 is electrically connected to the second connecting gate line 500.
[0149] Based on the same inventive concept, embodiments of this application also provide a photovoltaic module, including: a solar cell as provided in any of the foregoing embodiments.
[0150] According to the photovoltaic module of this application, the size of the first doped sub-region 111 along the first direction X of at least one cell is larger than the size of the second doped sub-region 121 along the first direction X, thereby increasing the area ratio of the first doped region 110 and thus improving the carrier collection efficiency. Furthermore, by increasing the number of first grid lines 200 in the first doped sub-region 111, the embodiments of this application shorten the distance between the carriers diffused within the first doped sub-region 111 and the first grid lines 200, enabling the carriers to be collected and transported by the first grid lines 200 as close and faster as possible. This improves the carrier collection capability, increases the power generation efficiency of the solar cell, thereby improving the power generation efficiency of the photovoltaic module, reducing power generation costs, and contributing to the sustainable development of the photovoltaic industry.
[0151] The terms "first," "second," etc., used in the specification and claims of this application are used to distinguish similar objects and not to describe a specific order or sequence. It should be understood that such use of data can be interchanged where appropriate so that embodiments of this application can be implemented in orders other than those illustrated or described herein, and the objects distinguished by "first," "second," etc., are generally of the same class and the number of objects is not limited; for example, a first object can be one or more. Furthermore, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.
[0152] In the description of this application, it should be understood that the terms "center", "length", "width", "thickness", "left", "right", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0153] In the description of this application, "first feature" and "second feature" may include one or more of the features.
[0154] In the description of this application, "multiple" means two or more.
[0155] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.
[0156] Although embodiments of this application have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of this application, the scope of which is defined by the claims and their equivalents.
Claims
1. A solar cell, characterized in that, include: The substrate includes a light-receiving surface and a back-lighting surface that are positioned opposite to each other; A doped layer is disposed on the back surface of the substrate, having a first doped region and a second doped region. The first doped region includes a plurality of finger-shaped first doped sub-regions, and the second doped region includes a plurality of finger-shaped second doped sub-regions. The plurality of first doped sub-regions and the plurality of second doped sub-regions are arranged alternately along a first direction parallel to the substrate. The size of the first doped sub-region along the first direction is larger than the size of the second doped sub-region along the first direction. The doping type of the second doped region is opposite to that of the first doped region. A plurality of first gate lines are provided, and the first gate line extending along a second direction is correspondingly provided on the side of the first doped subregion away from the substrate; the second direction is parallel to the substrate and perpendicular to the first direction; Multiple second gate lines are provided, with the second gate line extending along the second direction corresponding to the side of the second doped subregion away from the substrate; In this embodiment, each of the first doped sub-regions is provided with at least two first gate lines arranged at intervals along the first direction.
2. The solar cell according to claim 1, characterized in that, The dimension of the first doped sub-region along the first direction is D1, and D1 is positively correlated with the number of the first gate lines corresponding to the first doped sub-region.
3. The solar cell according to claim 1, characterized in that, The first doped sub-region is provided with multiple first gate lines arranged at equal intervals; The distance between the outermost first gate line and the edge of the first doped sub-region is D2, and the distance between adjacent first gate lines is D3; D3 = 2D2.
4. The solar cell according to claim 1, characterized in that, The arrangement of the first gate lines is the same in each of the first doped subregions; Each of the second doped sub-regions is provided with a second gate line, and the second gate line passes through the center point of the second doped sub-region.
5. The solar cell according to claim 4, characterized in that, The spacing between the center points of adjacent first doped sub-regions is D4, the spacing between the first gate lines in the same position within adjacent first doped sub-regions is D5, and the spacing between the center points of adjacent second doped sub-regions is D6; D4 = D5 = D6.
6. The solar cell according to claim 5, characterized in that, 1.0 mm ≤ D4 ≤ 1.2 mm; and / or, 0.3 mm ≤ D3 ≤ 0.4 mm; and / or, The spacing between the first gate lines that are close to each other in adjacent first doped subregions is D7, where 0.7 mm ≤ D7 ≤ 0.8 mm.
7. The solar cell according to claim 1, characterized in that, Along the first direction, the size of a single first gate line is smaller than the size of a single second gate line.
8. The solar cell according to claim 7, characterized in that, Along the first direction, the linewidth of the first gate line is not less than 12 micrometers and not more than 35 micrometers; The linewidth of the second gate line is not less than 15 micrometers and not more than 40 micrometers.
9. The solar cell according to any one of claims 1-8, characterized in that, The first doped region further includes a third doped sub-region extending along the first direction, the third doped sub-region being connected to a plurality of the first doped sub-regions respectively; the second doped region further includes a fourth doped sub-region extending along the first direction, the fourth doped sub-region being connected to a plurality of the second doped regions respectively. The solar cell also includes: A first connecting gate line is disposed on the side of the third doped subregion away from the substrate and extends along the first direction; each of the first gate lines is electrically connected to the first connecting gate line; The second connecting gate line is disposed on the side of the fourth doped subregion away from the substrate and extends along the first direction; each of the second gate lines is electrically connected to the second connecting gate line.
10. A photovoltaic module, characterized in that, include: The solar cell as described in any one of claims 1-9.