MOS transistor synchronous rectification power management circuit with low conduction loss

Abstract

The utility model relates to circuit technical field, concretely relates to low conduction loss's MOS pipe synchronous rectification power management circuit. Including: at least one synchronous rectification MOS pipe for rectifying power supply, the synchronous rectification MOS pipe has very low on -resistance, voltage detection module is connected to the drain and source of synchronous rectification MOS pipe for real -time detection synchronous rectification MOS pipe's drain -source voltage, logic control module is with voltage detection module electricity connection, receives the drain -source voltage signal from voltage detection module, the logic control module according to the preset voltage threshold condition, when the detected drain -source voltage is lower than the opening threshold value, the application can according to application scene, load variation and environmental factor dynamic optimization MOS pipe working state.

Description

Technical Field

[0001] This utility model relates to the field of circuit technology, specifically to a MOS transistor synchronous rectification power management circuit with low conduction loss. Background Technology

[0002] In the current power management field, with the increasing energy efficiency requirements of electronic devices, reducing the conduction losses of MOSFET synchronous rectification power management circuits has become a key technical challenge. In existing MOSFET synchronous rectification power management circuits, the MOSFET has inherent resistance when conducting, resulting in significant heat loss when current flows through it, making it difficult to overcome the bottleneck in power efficiency. Especially under different application scenarios and load conditions, traditional circuits use fixed on / off control strategies, failing to dynamically adjust the MOSFET's operating state according to actual operating conditions. This makes it difficult for the MOSFET to always be at its optimal operating point, further exacerbating conduction losses. Furthermore, changes in ambient temperature affect the performance parameters of the MOSFET, but traditional circuits lack effective mechanisms for adaptively adjusting operating parameters, leading to a significant decrease in power efficiency under complex environments.

[0003] Therefore, there is an urgent need for a power management circuit solution that can effectively reduce the conduction loss of MOSFETs and dynamically optimize the operating state of MOSFETs according to application scenarios, load changes, and environmental factors. Utility Model Content

[0004] To address the problems existing in current technologies, this utility model provides a low-conduction-loss MOSFET synchronous rectification power management circuit, comprising:

[0005] At least one synchronous rectifier MOSFET is used to rectify the power supply, and the synchronous rectifier MOSFET has extremely low on-resistance.

[0006] A voltage detection module is connected to the drain and source of the synchronous rectifier MOSFET to detect the drain-source voltage of the synchronous rectifier MOSFET in real time.

[0007] The logic control module is electrically connected to the voltage detection module and receives the drain-source voltage signal from the voltage detection module. According to the preset voltage threshold conditions, when the detected drain-source voltage is lower than the turn-on threshold, the logic control module outputs a turn-on control signal to the gate of the synchronous rectifier MOSFET, and when the detected drain-source voltage is higher than the turn-off threshold, it outputs a turn-off control signal to the gate of the synchronous rectifier MOSFET. The turn-on threshold and turn-off threshold can be dynamically adjusted by an external adjustment circuit according to different application scenarios and load requirements.

[0008] An adaptive adjustment circuit, connected to the logic control module and the voltage detection module, can automatically adjust the turn-on threshold and turn-off threshold according to the real-time operating parameters of the power management circuit, including but not limited to input voltage, output current, and ambient temperature, to ensure that the synchronous rectifier MOSFET can achieve optimal turn-on and turn-off timing under different operating conditions, thereby further reducing conduction losses.

[0009] Preferably, there are multiple synchronous rectifier MOSFETs, which form a full-bridge rectifier structure or a half-bridge rectifier structure. In the full-bridge rectifier structure, the four synchronous rectifier MOSFETs are connected in a specific topology, two to one, to control the current conduction during the positive and negative half-cycles respectively. In the half-bridge rectifier structure, the two synchronous rectifier MOSFETs work in a complementary manner, alternately turning on and off to rectify the AC power.

[0010] Preferably, the voltage detection module includes a differential amplifier circuit, the two input terminals of which are respectively connected to the drain and source of the synchronous rectifier MOSFET, for differential amplification of the drain-source voltage to improve the accuracy of voltage detection and anti-interference capability. The amplified signal output by the differential amplifier circuit is transmitted to the logic control module.

[0011] Preferably, the logic control module includes a comparator circuit. The comparator circuit compares the drain-source voltage signal from the voltage detection module with preset turn-on threshold and turn-off threshold signals. When the drain-source voltage signal is lower than the turn-on threshold signal, the comparator circuit outputs a high-level signal as a turn-on control signal. When the drain-source voltage signal is higher than the turn-off threshold signal, the comparator circuit outputs a low-level signal as a turn-off control signal. The comparator circuit also has hysteresis characteristics to prevent malfunctions near the thresholds.

[0012] Preferably, the adaptive adjustment circuit includes:

[0013] The sampling circuit is used to sample at least one parameter among input voltage, output current, and ambient temperature in real time.

[0014] The microcontroller is connected to the sampling circuit and receives the parameter signals collected by the sampling circuit. The microcontroller stores a data table of optimal turn-on threshold and turn-off threshold corresponding to different parameter combinations. The microcontroller queries the data table based on the real-time parameters obtained by sampling, calculates and generates the corresponding adjustment signal.

[0015] The digital-to-analog converter circuit, connected to the microcontroller and the logic control module, converts the digital adjustment signal output by the microcontroller into an analog voltage signal, which is used to adjust the turn-on threshold and turn-off threshold in the logic control module.

[0016] Preferably, it also includes an overcurrent protection circuit, which is connected in series in the source or drain circuit of the synchronous rectifier MOSFET. When the current through the synchronous rectifier MOSFET exceeds a preset overcurrent threshold, the overcurrent protection circuit quickly activates and sends an overcurrent signal to the logic control module. After receiving the overcurrent signal, the logic control module immediately outputs a shutdown control signal to turn off the synchronous rectifier MOSFET, thereby protecting the circuit from damage caused by excessive current. After the overcurrent fault is cleared, the overcurrent protection circuit can automatically return to normal operation.

[0017] Preferably, the synchronous rectifier MOSFET is manufactured using a novel semiconductor material. This semiconductor material has a lower resistivity and better carrier mobility than traditional silicon materials, thereby further reducing the on-resistance of the synchronous rectifier MOSFET under the same size and structure, and enabling it to withstand higher current densities, thus improving the overall performance and reliability of the circuit.

[0018] Preferably, the system further includes a drive enhancement circuit connected between the logic control module and the gate of the synchronous rectifier MOSFET. This drive enhancement circuit enhances the driving capability of the turn-on and turn-off control signals output by the logic control module. It can quickly charge and discharge the gate capacitance of the synchronous rectifier MOSFET, reducing the switching delay time and further reducing switching losses. The drive enhancement circuit includes a push-pull amplifier circuit, whose input signal comes from the logic control module and whose output signal is connected to the gate of the synchronous rectifier MOSFET.

[0019] Technical effects:

[0020] This utility model establishes the basic architecture of a low-conduction-loss MOSFET synchronous rectification power management circuit. The core component includes at least one synchronous rectification MOSFET with extremely low on-resistance, responsible for power rectification; low on-resistance is key to reducing losses. A voltage detection module monitors the drain-source voltage of the synchronous rectification MOSFET in real time, providing data for subsequent control. The logic control module receives the voltage detection signal and, based on preset turn-on and turn-off thresholds, precisely controls the gate signal of the synchronous rectification MOSFET to achieve turn-on and turn-off. An external adjustment circuit can dynamically adjust the thresholds to adapt to different application scenarios and load requirements. An adaptive adjustment circuit further optimizes the thresholds automatically based on real-time operating parameters such as input voltage, output current, and ambient temperature, ensuring the MOSFET operates at its optimal state under various conditions. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0022] Figure 1 This is a schematic diagram of the low conduction loss MOSFET synchronous rectification power management circuit of this application.

[0023] Figure 2 This is a schematic diagram of the adaptive adjustment circuit connection in this application. Detailed Implementation

[0024] In the following description, specific details such as particular system architectures and techniques are set forth for illustrative purposes and not for limitation, in order to provide a thorough understanding of the embodiments of this application. However, those skilled in the art will understand that this application may also be implemented in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, apparatuses, circuits, and methods have been omitted so as not to obscure the description of this application with unnecessary detail.

[0025] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.

[0026] Please see Figure 1 In traditional MOSFET synchronous rectification power management circuits, the conduction loss of the MOSFET is a significant factor affecting power efficiency. Because the MOSFET has a certain resistance when conducting, heat is generated when current flows through it, leading to energy loss. Furthermore, the optimal operating state of the MOSFET varies depending on the application scenario and load conditions. Fixed control strategies are insufficient to achieve optimal turn-on and turn-off timings, further exacerbating losses. In addition, environmental factors such as temperature changes also affect the performance and operating state of the MOSFET, and traditional circuits lack effective adaptive adjustment mechanisms to cope with these changes.

[0027] Based on this, this application provides a low-conduction-loss MOSFET synchronous rectification power management circuit, comprising:

[0028] At least one synchronous rectifier MOSFET is used to rectify the power supply, and the synchronous rectifier MOSFET has extremely low on-resistance.

[0029] A voltage detection module is connected to the drain and source of the synchronous rectifier MOSFET to detect the drain-source voltage of the synchronous rectifier MOSFET in real time.

[0030] The logic control module is electrically connected to the voltage detection module and receives the drain-source voltage signal from the voltage detection module. According to the preset voltage threshold conditions, when the detected drain-source voltage is lower than the turn-on threshold, the logic control module outputs a turn-on control signal to the gate of the synchronous rectifier MOSFET, and when the detected drain-source voltage is higher than the turn-off threshold, it outputs a turn-off control signal to the gate of the synchronous rectifier MOSFET. The turn-on threshold and turn-off threshold can be dynamically adjusted by an external adjustment circuit according to different application scenarios and load requirements.

[0031] An adaptive adjustment circuit, connected to the logic control module and the voltage detection module, can automatically adjust the turn-on threshold and turn-off threshold according to the real-time operating parameters of the power management circuit, including but not limited to input voltage, output current, and ambient temperature, to ensure that the synchronous rectifier MOSFET can achieve optimal turn-on and turn-off timing under different operating conditions, thereby further reducing conduction losses.

[0032] It is worth mentioning that this embodiment constructs the basic architecture of a low-conduction-loss MOSFET synchronous rectification power management circuit. The core component includes at least one synchronous rectification MOSFET with extremely low on-resistance, responsible for power rectification; low on-resistance is key to reducing losses. A voltage detection module monitors the drain-source voltage of the synchronous rectification MOSFET in real time, providing data for subsequent control. The logic control module receives the voltage detection signal and, based on preset turn-on and turn-off thresholds, precisely controls the gate signal of the synchronous rectification MOSFET to achieve turn-on and turn-off. An external adjustment circuit can dynamically adjust the thresholds to adapt to different application scenarios and load requirements. An adaptive adjustment circuit further optimizes the thresholds automatically based on real-time operating parameters such as input voltage, output current, and ambient temperature, ensuring that the MOSFET operates at its optimal state under various conditions.

[0033] This embodiment reduces conduction losses and improves power supply efficiency directly at the hardware level by employing a synchronous rectifier MOSFET with extremely low on-resistance. The cooperation between the voltage detection module and the logic control module enables precise control of the MOSFET's on and off states, avoiding unnecessary energy loss. The introduction of external adjustment circuitry and adaptive adjustment circuitry allows the circuit to dynamically adjust the control strategy according to actual needs and operating conditions. Regardless of different application scenarios or changing environmental conditions, it ensures the MOSFET operates in its optimal state, further reducing conduction losses and significantly improving the overall efficiency and stability of the power management circuit, thus enhancing its applicability and reliability.

[0034] Traditional technical solutions suffer from the following problems: a single synchronous rectifier MOSFET may be insufficient when handling power rectification with high power or specific voltage and current requirements. For example, its maximum current handling capacity is limited, and it may be damaged due to excessive current in high-power applications; in applications requiring high output voltage stability, a single MOSFET is insufficient. Traditional simple circuit structures cannot fully utilize the performance advantages of MOSFETs, cannot meet diverse power rectification needs, and limit the application scope and performance improvement of power management circuits.

[0035] Based on this, there are multiple synchronous rectifier MOSFETs, which form a full-bridge rectification structure or a half-bridge rectification structure. In the full-bridge rectification structure, the four synchronous rectifier MOSFETs are connected in a specific topology, two to one, to control the current conduction of the positive and negative half-cycles respectively. In the half-bridge rectification structure, the two synchronous rectifier MOSFETs work in a complementary manner, alternately turning on and off to achieve rectification of the AC power.

[0036] It is worth mentioning that, based on the above embodiments, this embodiment optimizes the application structure of synchronous rectifier MOSFETs, proposing that multiple synchronous rectifier MOSFETs can form a full-bridge rectifier structure or a half-bridge rectifier structure. In the full-bridge rectifier structure, four synchronous rectifier MOSFETs are connected according to a specific topology, two to one opposite each other, and conduct during the positive and negative half-cycles of the AC current respectively, achieving full-wave rectification of the AC current. The half-bridge rectifier structure consists of two synchronous rectifier MOSFETs, which alternately turn on and off in a complementary manner, also completing the rectification of the AC current. This multi-MOSFET rectifier structure design fully utilizes the characteristics of MOSFETs to achieve more efficient power conversion.

[0037] The technical effects achieved by the above embodiments include: Firstly, employing a full-bridge or half-bridge rectifier structure improves the circuit's power handling capability. The collaborative operation of multiple MOSFETs can share the current, reducing the workload on individual MOSFETs and improving the circuit's reliability and stability, enabling it to meet the rectification requirements of high-power supplies. Secondly, this structure allows for better control of output voltage and current. Through reasonable MOSFET turn-on and turn-off timing control, a more stable output can be achieved, improving power quality. Furthermore, different rectifier structures can be selected according to specific application scenarios and requirements, enhancing the flexibility and adaptability of the power management circuit and expanding its application range in various fields.

[0038] Traditional technical solutions suffer from the following problems: In the actual operating environment of power management circuits, various electromagnetic interference noise signals exist, which may be superimposed on the drain-source voltage signal of the synchronous rectifier MOSFET. If the voltage signal containing noisy signals is directly transmitted to the logic control module, it may cause the logic control module to make incorrect judgments, resulting in deviations in the conduction and turn-off control of the MOSFET, affecting the normal operation and performance of the power management circuit. Traditional voltage detection methods often cannot effectively remove these interference signals, leading to inaccurate voltage detection and reducing the stability and reliability of the circuit.

[0039] Based on this, the voltage detection module includes a differential amplifier circuit. The two input terminals of the differential amplifier circuit are respectively connected to the drain and source of the synchronous rectifier MOS transistor to perform differential amplification of the drain-source voltage, so as to improve the accuracy of voltage detection and anti-interference capability. The amplified signal output by the differential amplifier circuit is transmitted to the logic control module.

[0040] It is worth mentioning that this embodiment focuses on optimizing the voltage detection module, explicitly including a differential amplifier circuit. The two input terminals of the differential amplifier circuit are connected to the drain and source of the synchronous rectifier MOSFET, respectively. Its working principle is to differentially amplify the drain-source voltage. By extracting and amplifying the difference signal between the drain and source voltages, common-mode interference signals can be effectively suppressed, improving the accuracy and anti-interference capability of voltage detection. The amplified signal after processing by the differential amplifier circuit is transmitted to the logic control module, providing a more accurate voltage signal basis for the turn-on and turn-off control of the MOSFET.

[0041] The technical effects achieved by the above embodiments include: the application of the differential amplifier circuit significantly improves the accuracy of drain-source voltage detection by the voltage detection module. By suppressing common-mode interference, the detected voltage signal more accurately reflects the actual operating state of the MOSFET, providing a reliable input signal for the logic control module. Based on the accurate voltage signal, the logic control module can more precisely control the conduction and turn-off of the MOSFET, avoiding malfunctions caused by voltage detection errors, thereby improving the operational stability and reliability of the power management circuit, reducing energy loss caused by erroneous control, and further enhancing the overall performance of the circuit.

[0042] Traditional technical solutions suffer from the following problems: In power management circuits, voltage signals may fluctuate and generate noise. If the comparator circuit lacks hysteresis and relies solely on a fixed threshold, it may frequently change its output signal when the voltage signal fluctuates around that threshold, causing the MOSFET to repeatedly turn on and off. This frequent switching not only increases the switching losses of the MOSFET and shortens its lifespan but also causes instability in the power output, generating voltage ripple and affecting the normal operation and performance of the entire circuit.

[0043] Based on this, the logic control module includes a comparator circuit. The comparator circuit compares the drain-source voltage signal from the voltage detection module with preset turn-on and turn-off threshold signals. When the drain-source voltage signal is lower than the turn-on threshold signal, the comparator circuit outputs a high-level signal as a turn-on control signal. When the drain-source voltage signal is higher than the turn-off threshold signal, the comparator circuit outputs a low-level signal as a turn-off control signal. The comparator circuit also has hysteresis characteristics to prevent malfunctions near the thresholds.

[0044] This embodiment focuses on describing a key component of the logic control module—the comparator circuit. The comparator circuit receives the drain-source voltage signal from the voltage detection module and compares it with preset turn-on and turn-off threshold signals. When the drain-source voltage signal is lower than the turn-on threshold signal, the comparator circuit outputs a high-level signal as a turn-on control signal, driving the synchronous rectifier MOSFET to turn on; when the drain-source voltage signal is higher than the turn-off threshold signal, the comparator circuit outputs a low-level signal as a turn-off control signal, turning off the MOSFET. Furthermore, the comparator circuit possesses hysteresis characteristics, meaning that the turn-on and turn-off thresholds are not fixed single values ​​but exist within a certain threshold range. This effectively prevents malfunctions caused by signal fluctuations near the thresholds.

[0045] The technical effects achieved by the above embodiments include: the hysteresis characteristic of the comparator circuit effectively solves the problem of malfunction caused by voltage signal fluctuations. By setting a certain threshold range, the comparator circuit will only change its output state when the voltage signal exceeds this range, avoiding frequent switching of the MOSFET near the threshold, reducing switching losses, and extending the lifespan of the MOSFET. Simultaneously, stable MOSFET switching control makes the power supply output more stable, reduces voltage ripple, improves power supply quality and reliability, and ensures stable operation of the power management circuit under various operating conditions.

[0046] Traditional power management solutions suffer from the following technical problems: In actual operation, power management circuits face complex and variable operating conditions, with input voltage, output load, and ambient temperature all altering their performance. Traditional power management circuits typically use fixed turn-on and turn-off thresholds, failing to automatically adjust to these changing conditions. This results in MOSFETs potentially operating at their optimal state under different operating conditions, leading to significant conduction losses, reduced power efficiency, and even impacting the normal operation and reliability of the circuit.

[0047] Based on this, please refer to Figure 2 The adaptive adjustment circuit includes:

[0048] The sampling circuit is used to sample at least one parameter among input voltage, output current, and ambient temperature in real time.

[0049] The microcontroller is connected to the sampling circuit and receives the parameter signals collected by the sampling circuit. The microcontroller stores a data table of optimal turn-on threshold and turn-off threshold corresponding to different parameter combinations. The microcontroller queries the data table based on the real-time parameters obtained by sampling, calculates and generates the corresponding adjustment signal.

[0050] The digital-to-analog converter circuit, connected to the microcontroller and the logic control module, converts the digital adjustment signal output by the microcontroller into an analog voltage signal, which is used to adjust the turn-on threshold and turn-off threshold in the logic control module.

[0051] It is worth mentioning that this embodiment details the composition and working principle of the adaptive adjustment circuit. This circuit consists of a sampling circuit, a microcontroller, and a digital-to-analog converter. The sampling circuit collects at least one parameter from the input voltage, output current, and ambient temperature in real time to obtain the real-time operating status information of the power management circuit. The microcontroller is connected to the sampling circuit, receives the sampled data, and internally stores a data table of optimal turn-on and turn-off thresholds corresponding to different parameter combinations. Based on the sampled real-time parameters, the microcontroller queries the data table and generates the corresponding adjustment signal through calculation. The digital-to-analog converter converts the digital adjustment signal output by the microcontroller into an analog voltage signal, which is then transmitted to the logic control module to realize the dynamic adjustment of the turn-on and turn-off thresholds.

[0052] The technical effects achieved by the above embodiments include: the introduction of the adaptive adjustment circuit enables the power management circuit to intelligently adapt to different operating conditions. Through real-time sampling and dynamic threshold adjustment, regardless of input voltage fluctuations, output load changes, or ambient temperature variations, it ensures that the synchronous rectifier MOSFET always operates at the optimal turn-on and turn-off timing, minimizing conduction losses and improving power efficiency. This adaptive adjustment mechanism enhances the circuit's adaptability to complex operating environments, improves the stability and reliability of the power management circuit, and meets the demands of modern electronic devices for efficient and stable power supplies.

[0053] Traditional power management solutions suffer from the following technical problems: During the operation of the power management circuit, overcurrent situations may occur due to various reasons, such as load short circuits or circuit component failures. Excessive current can cause the synchronous rectifier MOSFET and other circuit components to overheat or even burn out, seriously threatening the safe operation of the circuit. Traditional power management circuits may lack effective overcurrent protection measures or have inadequate protection mechanisms, failing to promptly cut off overcurrent circuits and adequately protect circuit components, thus reducing the reliability and safety of the circuit.

[0054] Based on this, an overcurrent protection circuit is also included. The overcurrent protection circuit is connected in series in the source or drain circuit of the synchronous rectifier MOSFET. When the current through the synchronous rectifier MOSFET exceeds the preset overcurrent threshold, the overcurrent protection circuit acts quickly and sends an overcurrent signal to the logic control module. After receiving the overcurrent signal, the logic control module immediately outputs a shutdown control signal to turn off the synchronous rectifier MOSFET, so as to protect the circuit from damage caused by excessive current. After the overcurrent fault is cleared, the overcurrent protection circuit can automatically return to normal working state.

[0055] It is worth mentioning that this embodiment proposes to add an overcurrent protection circuit to the power management circuit. This circuit is connected in series in the source or drain circuit of the synchronous rectifier MOSFET to monitor the current through the MOSFET in real time. The overcurrent protection circuit has a preset overcurrent threshold. When the detected current exceeds the threshold, the overcurrent protection circuit quickly activates and sends an overcurrent signal to the logic control module. After receiving the overcurrent signal, the logic control module immediately outputs a shutdown control signal to turn off the synchronous rectifier MOSFET, cutting off the path of excessive current and protecting other components in the circuit from damage. Moreover, the overcurrent protection circuit has an automatic recovery function, and can automatically return to normal operation after the overcurrent fault is cleared, without manual intervention.

[0056] The technical effects achieved by the above embodiments include: the overcurrent protection circuit provides reliable safety assurance for the power management circuit. In the event of an overcurrent, it can quickly respond and disconnect the MOSFET, preventing excessive current from damaging circuit components and effectively protecting the synchronous rectifier MOSFET and other critical circuit components, thus improving the reliability and safety of the circuit. Simultaneously, the automatic recovery function allows the circuit to quickly return to normal operation after fault resolution, reducing manual maintenance costs and downtime, ensuring the continuous and stable operation of the power management circuit, and making it suitable for various application scenarios with high reliability requirements.

[0057] Traditional technical solutions suffer from the following problems: As electronic devices increasingly demand higher power efficiency and power density, traditional silicon-based MOSFETs are finding it increasingly difficult to meet these requirements. Their high resistivity leads to significant conduction losses, limiting improvements in power efficiency. Under high current density operating conditions, the performance of silicon MOSFETs is affected, even leading to overheating, making them unsuitable for some high-power, high-frequency applications. The limitations of traditional materials have become a bottleneck restricting further improvements in the performance of power management circuits.

[0058] Based on this, the synchronous rectifier MOSFET is manufactured using a novel semiconductor material. This semiconductor material has a lower resistivity and better carrier mobility than traditional silicon material, thereby further reducing the on-resistance of the synchronous rectifier MOSFET under the same size and structure, and enabling it to withstand higher current densities, thus improving the overall performance and reliability of the circuit.

[0059] It is worth mentioning that this embodiment focuses on material innovation for synchronous rectifier MOSFETs, proposing the use of novel semiconductor materials to manufacture them. Compared to traditional silicon materials, this new semiconductor material has lower resistivity and better carrier mobility. Lower resistivity means that, with the same size and structure, the on-resistance of the MOSFET can be further reduced; better carrier mobility allows the MOSFET to withstand higher current densities. Through material improvement, the performance of the synchronous rectifier MOSFET is fundamentally enhanced, thereby optimizing the overall performance of the power management circuit.

[0060] The technical effects achieved by the above embodiments include: the synchronous rectifier MOSFET manufactured using novel semiconductor materials significantly reduces on-resistance, further reduces conduction losses, and improves the efficiency of the power management circuit. Simultaneously, due to its ability to withstand higher current densities, the circuit can operate stably under conditions of higher current and higher power, expanding the application range of the power management circuit and making it suitable for electronic devices with higher power performance requirements, such as server power supplies and new energy vehicle power supplies. The application of novel materials fundamentally improves the performance of the MOSFET, bringing higher reliability and stability to the power management circuit.

[0061] Traditional technical solutions suffer from the following problems: In power management circuits, the control signals output by the logic control module have limited driving capability. When the signal is transmitted to the gate of the synchronous rectifier MOSFET, due to the gate's capacitance, a certain amount of time is required for charging and discharging, resulting in a delay in the MOSFET's switching process. This switching delay causes the MOSFET to be in an incompletely turned-on or incompletely turned-off state during the switching process, increasing switching losses and reducing the efficiency of the power management circuit. Traditional circuit structures often cannot effectively solve this problem, affecting the improvement of circuit performance.

[0062] Based on this, a drive enhancement circuit is also included. The drive enhancement circuit is connected between the logic control module and the gate of the synchronous rectifier MOSFET. It is used to enhance the driving capability of the turn-on control signal and turn-off control signal output by the logic control module. The drive enhancement circuit can quickly charge and discharge the gate capacitance of the synchronous rectifier MOSFET, reduce the switching delay time of the synchronous rectifier MOSFET, and thus further reduce switching losses. The drive enhancement circuit includes a push-pull amplifier circuit. The input signal of the push-pull amplifier circuit comes from the logic control module, and the output signal is connected to the gate of the synchronous rectifier MOSFET. The controllable laser is not in a constant temperature state, and the wavelength will still fluctuate to some extent.

[0063] It is worth mentioning that this embodiment adds a drive enhancement circuit to the circuit, which is connected between the logic control module and the gate of the synchronous rectifier MOSFET. The main function of the drive enhancement circuit is to enhance the driving capability of the turn-on control signal and turn-off control signal output by the logic control module. It adopts a push-pull amplifier circuit structure, with the input signal from the logic control module and the output signal connected to the gate of the synchronous rectifier MOSFET. Through the push-pull amplifier circuit, the gate capacitance of the synchronous rectifier MOSFET can be charged and discharged quickly, shortening the switching delay time of the MOSFET and thus reducing switching losses.

[0064] The technical effects achieved by the above embodiments include: the introduction of the drive enhancement circuit effectively enhances the driving capability of the control signal, accelerates the charging and discharging speed of the MOSFET gate capacitor, and significantly shortens the switching delay time of the MOSFET. The MOSFET can achieve turn-on and turn-off more quickly and accurately, reducing energy loss during the switching process and further improving the efficiency of the power management circuit. Simultaneously, the fast switching response also allows the circuit to better adapt to high-frequency operating environments, improving the circuit's operating frequency and performance, and meeting the needs of modern electronic devices for efficient, high-frequency power management.

[0065] Unless otherwise specified, the equipment components involved in the above embodiments are all conventional equipment components, and the connection methods and control methods involved are all conventional connection methods and control methods unless otherwise specified.

[0066] The present invention has been described in detail above with reference to the embodiments. However, those skilled in the art will understand that, without departing from the spirit of the present invention, various specific parameters in the above embodiments can be changed to form multiple specific embodiments, all of which are common variations of the present invention, and will not be described in detail here.

Claims

1. A low-conduction-loss MOSFET synchronous rectification power management circuit, characterized in that, include: At least one synchronous rectifier MOSFET is used to rectify the power supply, and the synchronous rectifier MOSFET has extremely low on-resistance. A voltage detection module is connected to the drain and source of the synchronous rectifier MOSFET to detect the drain-source voltage of the synchronous rectifier MOSFET in real time. The logic control module is electrically connected to the voltage detection module and receives the drain-source voltage signal from the voltage detection module. According to the preset voltage threshold conditions, when the detected drain-source voltage is lower than the turn-on threshold, the logic control module outputs a turn-on control signal to the gate of the synchronous rectifier MOSFET, and when the detected drain-source voltage is higher than the turn-off threshold, it outputs a turn-off control signal to the gate of the synchronous rectifier MOSFET. The turn-on threshold and turn-off threshold can be dynamically adjusted by an external adjustment circuit according to different application scenarios and load requirements. An adaptive adjustment circuit, connected to the logic control module and the voltage detection module, can automatically adjust the turn-on threshold and turn-off threshold according to the real-time operating parameters of the power management circuit, including but not limited to input voltage, output current, and ambient temperature, to ensure that the synchronous rectifier MOSFET can achieve optimal turn-on and turn-off timing under different operating conditions, thereby further reducing conduction losses.

2. The low conduction loss MOS transistor synchronous rectification power management circuit according to claim 1, characterized in that, The synchronous rectifier MOSFETs are multiple, forming a full-bridge rectifier structure or a half-bridge rectifier structure. In the full-bridge rectifier structure, the four synchronous rectifier MOSFETs are connected in a specific topology, two to one, to control the current conduction during the positive and negative half-cycles respectively. In the half-bridge rectifier structure, the two synchronous rectifier MOSFETs work in a complementary manner, alternately turning on and off to rectify the AC power.

3. The low conduction loss MOS transistor synchronous rectification power management circuit according to claim 1, characterized in that, The voltage detection module includes a differential amplifier circuit. The two input terminals of the differential amplifier circuit are respectively connected to the drain and source of the synchronous rectifier MOSFET, which is used to differentially amplify the drain-source voltage to improve the accuracy of voltage detection and anti-interference capability. The amplified signal output by the differential amplifier circuit is transmitted to the logic control module.

4. The low conduction loss MOS transistor synchronous rectification power management circuit according to claim 1, characterized in that, The logic control module includes a comparator circuit. The comparator circuit compares the drain-source voltage signal from the voltage detection module with preset turn-on and turn-off threshold signals. When the drain-source voltage signal is lower than the turn-on threshold signal, the comparator circuit outputs a high-level signal as a turn-on control signal. When the drain-source voltage signal is higher than the turn-off threshold signal, the comparator circuit outputs a low-level signal as a turn-off control signal. The comparator circuit also has hysteresis characteristics to prevent malfunctions near the thresholds.

5. The low conduction loss MOS transistor synchronous rectification power management circuit according to claim 1, characterized in that, The adaptive adjustment circuit includes: The sampling circuit is used to sample at least one parameter among input voltage, output current, and ambient temperature in real time. The microcontroller is connected to the sampling circuit and receives the parameter signals collected by the sampling circuit. The microcontroller stores a data table of optimal turn-on threshold and turn-off threshold corresponding to different parameter combinations. The microcontroller queries the data table based on the real-time parameters obtained by sampling, calculates and generates the corresponding adjustment signal. The digital-to-analog converter circuit, connected to the microcontroller and the logic control module, converts the digital adjustment signal output by the microcontroller into an analog voltage signal, which is used to adjust the turn-on threshold and turn-off threshold in the logic control module.

6. The low conduction loss MOS transistor synchronous rectification power management circuit according to claim 1, characterized in that, It also includes an overcurrent protection circuit, which is connected in series in the source or drain circuit of the synchronous rectifier MOSFET. When the current through the synchronous rectifier MOSFET exceeds the preset overcurrent threshold, the overcurrent protection circuit acts quickly and sends an overcurrent signal to the logic control module. After receiving the overcurrent signal, the logic control module immediately outputs a shutdown control signal to turn off the synchronous rectifier MOSFET, thereby protecting the circuit from damage caused by excessive current. After the overcurrent fault is cleared, the overcurrent protection circuit can automatically return to normal operation.

7. The low conduction loss MOS transistor synchronous rectification power management circuit according to claim 1, characterized in that, The synchronous rectifier MOSFET is manufactured using a novel semiconductor material that has lower resistivity and better carrier mobility than traditional silicon. This allows the synchronous rectifier MOSFET to have a lower on-resistance and be able to withstand higher current densities while maintaining the same size and structure, thus improving the overall performance and reliability of the circuit.

8. The low conduction loss MOS transistor synchronous rectification power management circuit according to claim 1, characterized in that, It also includes a drive enhancement circuit, which is connected between the logic control module and the gate of the synchronous rectifier MOSFET. The drive enhancement circuit is used to enhance the driving capability of the turn-on control signal and turn-off control signal output by the logic control module. The drive enhancement circuit can quickly charge and discharge the gate capacitance of the synchronous rectifier MOSFET, reduce the switching delay time of the synchronous rectifier MOSFET, and thus further reduce switching losses. The drive enhancement circuit includes a push-pull amplifier circuit. The input signal of the push-pull amplifier circuit comes from the logic control module, and the output signal is connected to the gate of the synchronous rectifier MOSFET.

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