Display device

Abstract

The application belongs to the technical field of display, and particularly relates to a display device, which comprises a display panel and a flexible circuit board, the flexible circuit board is electrically connected with the display panel; the display panel comprises a substrate and a photosensitive transistor and a first transistor arranged on the substrate, the control end of the photosensitive transistor is electrically connected with a control signal, the first end of the photosensitive transistor is electrically connected with a first power signal, the second end of the photosensitive transistor is connected with a first node, the control end of the first transistor is connected with the first node, the first end of the first transistor is electrically connected with the first node, and the second end of the first transistor is electrically connected with a second power signal; the flexible circuit board is provided with a second transistor, the control end of the second transistor is electrically connected with the first node, the first end of the second transistor is electrically connected with a third power signal, and the second end of the second transistor is electrically connected with a fourth power signal. The application can effectively improve the photosensitive current and reduce the cost.

Description

Technical Field

[0001] This application belongs to the field of display technology, and specifically relates to a display device. Background Technology

[0002] Currently, the backlight brightness of displays is usually set manually and remains fixed, unlike mobile phones which can automatically adjust their brightness. In this case, if the environment is dark but the backlight brightness is high, it will not only harm the eyes but also waste electricity.

[0003] To solve this technical problem, existing technologies use the leakage current of photosensitive transistors on the display panel to sense the ambient light intensity and then adjust the backlight brightness.

[0004] However, the leakage current of the phototransistor in this method is extremely small. Such a small current makes the selection of amplifiers extremely demanding, requiring the use of high-precision amplifiers, which leads to a significant increase in cost. Utility Model Content

[0005] The purpose of this application is to solve the technical problem of increased cost caused by low leakage current in photosensitive transistors in the prior art.

[0006] This application provides a display device, which includes a display panel and a flexible circuit board, the flexible circuit board being electrically connected to the display panel; the display panel includes a substrate and a photosensitive transistor and a first transistor disposed on the substrate, the control terminal of the photosensitive transistor being electrically connected to a control signal, the first terminal of the photosensitive transistor being electrically connected to a first power signal, the second terminal of the photosensitive transistor being connected to a first node, the control terminal of the first transistor being connected to the first node, the first terminal of the first transistor being electrically connected to the first node, and the second terminal of the first transistor being electrically connected to a second power signal; the flexible circuit board has a second transistor disposed thereon, the control terminal of the second transistor being electrically connected to the first node, the first terminal of the second transistor being electrically connected to a third power signal, and the second terminal of the second transistor being electrically connected to a fourth power signal.

[0007] In one exemplary embodiment of this application, the flexible circuit board is further provided with: a resistor, the first end of which is electrically connected to the third power signal, and the second end of which is electrically connected to the first end of the second transistor; an operational amplifier, the first end of which is electrically connected to the first end of the second transistor and the second end of the resistor, and the second end of which is electrically connected to the analog-to-digital converter.

[0008] In one exemplary embodiment of this application, the second transistor is a metal-oxide-semiconductor field-effect transistor.

[0009] In one exemplary embodiment of this application, the current of the photosensitive transistor is equal to the drain current of the first transistor; the drain current of the first transistor is: Where, μ n It is electron mobility, C 0x It is the gate oxide capacitance per unit area. It is the ratio of the channel width to the channel length of the first transistor, V. GS It is the voltage from the gate to the source, V th1 It is the threshold voltage.

[0010] In one exemplary embodiment of this application, the gate-to-source voltage of the second transistor is equal to the gate-to-source voltage of the first transistor; the drain current of the second transistor is: Where, μ n It is electron mobility, C 0x It is the gate oxide capacitance per unit area. It is the ratio of the channel width to the channel length of the second transistor, V. GS It is the voltage from the gate to the source, V th2 It is the threshold voltage.

[0011] In one exemplary embodiment of this application, when the turn-on voltages of the first transistor and the second transistor are equal, the drain current of the second transistor is: Wherein, the I Q1 The photosensitive current of the photosensitive transistor is given, and the ratio of the channel width to the channel length of the second transistor is greater than the ratio of the channel width to the channel length of the first transistor.

[0012] In one exemplary embodiment of this application, the substrate has a display area and a non-display area, the non-display area is disposed around the display area, and the photosensitive transistor and the first transistor are disposed within the non-display area.

[0013] In one exemplary embodiment of this application, the photosensitive transistor includes at least two transistors arranged in parallel, with the source, drain, and gate of adjacent transistors shorted together.

[0014] In one exemplary embodiment of this application, the widths and lengths of adjacent transistors are equal.

[0015] In one exemplary embodiment of this application, the display device further includes a flip-chip film, and the flexible circuit board is electrically connected to the display panel through the flip-chip film.

[0016] The display device of this application has at least the following beneficial effects:

[0017] The display device of this application includes an interconnected display panel and a flexible circuit board. A photosensitive transistor and a first transistor are disposed on the substrate of the display panel. The control terminal of the photosensitive transistor is electrically connected to a control signal, the first terminal of the photosensitive transistor is electrically connected to a first power signal, and the second terminal of the photosensitive transistor is connected to a first node. The control terminal of the first transistor is also electrically connected to the first node, and the second terminal of the first transistor is electrically connected to a second power signal. On the flexible circuit board, the control terminal of the second transistor is electrically connected to the first node, the first terminal of the second transistor is electrically connected to a third power signal, and the second terminal of the second transistor is electrically connected to a fourth power signal. Through the aforementioned proportional circuit, the photosensitive current of the photosensitive transistor can be amplified and transferred to the second transistor, effectively increasing the current of the photosensitive transistor. This eliminates the need for a high-precision amplifier, effectively reducing costs. Furthermore, amplifying the photosensitive current also reduces the requirements for the amplifier, making amplifier selection easier and more flexible. In addition, the increased photosensitive current enhances anti-interference capabilities, and the design of the acquisition circuit is simpler and more reliable.

[0018] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0019] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0020] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0021] Figure 1 A schematic diagram of the connection structure of the display panel, the flip-chip film, and the flexible circuit board provided in Embodiment 1 or Embodiment 2 of this application is shown.

[0022] Figure 2 A schematic diagram of a proportional current circuit provided in Embodiment 1 or Embodiment 2 of this application is shown.

[0023] Figure 3 A schematic diagram of the structure of two transistors arranged in parallel according to Embodiment 2 of this application is shown.

[0024] Figure 4 A circuit diagram showing two transistors arranged in parallel according to Embodiment 2 of this application is shown.

[0025] Explanation of reference numerals in the attached figures:

[0026] 10. Display device; 100. Display panel; 110. Substrate; 200. Flexible circuit board; 300. Chip-on film; 400. First power signal line; 500. Second power signal line; 600. Third power signal line; 700. Fourth power signal line; 800. Control signal line; Q1. Photosensitive transistor; Q2. First transistor; Q3. Second transistor; VG. Control signal; VD. First power signal; VSS1. Second power signal; VDD. Third power signal; VSS2. Fourth power signal; R. Resistor; OP. Operational amplifier; A. First node; ADC. Analog-to-digital converter. Detailed Implementation

[0027] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0028] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0029] In this application, unless otherwise expressly specified and limited, the terms "assembly," "connection," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0030] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0031] Example 1

[0032] Figure 1 A schematic diagram of the connection structure of the display panel, the flip-chip film 300, and the flexible circuit board provided in an embodiment of this application is shown. Figure 2 A schematic diagram of a proportional current circuit provided in an embodiment of this application is shown.

[0033] See Figure 1 As shown, this application embodiment provides a display device 10, which includes a display panel 100 and a flexible circuit board 200, wherein the display panel 100 and the flexible circuit board 200 are electrically connected.

[0034] Among them, see Figure 1 and Figure 2 As shown, the display panel 100 includes a substrate 110 and a photosensitive transistor Q1 and a first transistor Q2 disposed on the substrate 110. A second transistor Q3 is disposed on the flexible circuit board 200, and a proportional current circuit is formed between the flexible circuit board 200 and the display circuit board. This proportional current circuit includes the photosensitive transistor Q1, the first transistor Q2, and the second transistor Q3.

[0035] Please continue reading Figure 2 As shown, in the proportional current circuit: the control terminal of phototransistor Q1 is electrically connected to the control signal VG. This control signal VG can control phototransistor Q1 to turn on or off. The first terminal of phototransistor Q1 is electrically connected to the first power supply signal VD. The second terminal of phototransistor Q1 is connected to the first node A. The control terminal of the first transistor Q2 is electrically connected to the first node A. The first terminal of the first transistor Q2 is electrically connected to the first node A. The second terminal of the first transistor Q2 is electrically connected to the second power supply signal VSS1.

[0036] The control terminal of the second transistor Q3 is electrically connected to the first node A, the first terminal of the second transistor Q3 is electrically connected to the third power supply signal VDD, and the second terminal of the second transistor Q3 is electrically connected to the fourth power supply signal VSS2.

[0037] The proportional current circuit formed by the aforementioned photosensitive transistor Q1, first transistor Q2, and second transistor Q3 can transfer the photosensitive current of photosensitive transistor Q1 to the second transistor Q3 on the flexible circuit board 200, thereby increasing the photosensitive current value. Increasing the photosensitive current reduces the requirements on the operational amplifier (OP), making OP selection easier and more flexible. Furthermore, by increasing the photosensitive current value, it eliminates the need for expensive high-precision amplifiers, effectively reducing costs. In addition, increasing the photosensitive current also improves anti-interference capabilities, making the design of the acquisition circuit simpler and more reliable.

[0038] In some embodiments of this application, the second transistor Q3 is a metal-oxide-semiconductor field-effect transistor (MOSFET). The aspect ratio of the second transistor Q3 is greater than that of the photosensitive transistor Q1 and the first transistor Q2.

[0039] In some embodiments of this application, see Figure 2 As shown, according to this proportional current circuit, the photosensitive current of phototransistor Q1 is equal to the drain current of the first transistor Q2, i.e., I0 DQ2 =I Q1 Among them, I DQ2 I is the drain current of the first transistor Q2. Q1 This is the photocurrent of phototransistor Q1.

[0040] The drain current of the first transistor Q2 is: μ n It is electron mobility, C 0x It is the gate oxide capacitance per unit area. It is the ratio of the channel width to the channel length of the first transistor Q2, V. GS It is the voltage from the gate to the source, V th1 It is the threshold voltage of the first transistor Q2.

[0041] In some embodiments of this application, please refer to... Figure 2 As shown, according to the proportional current circuit, the gate-to-source voltage of the second transistor Q3 is equal to the gate-to-source voltage of the first transistor Q2. The drain current of the second transistor Q3 is: I DQ3 The current of the second transistor Q3 is μ. n It is electron mobility, C 0x It is the gate oxide capacitance per unit area. It is the ratio of the channel width to the channel length of the second transistor Q3, V. GS It is the voltage from the gate to the source, V th2 It is the threshold voltage of the second transistor Q3.

[0042] In some embodiments of this application, when the turn-on voltage of the second transistor Q3 is equal to that of the first transistor Q2, that is, when the threshold voltage V of the first transistor Q2 is equal... th1 With the threshold voltage V of the second transistor Q3 th2 At the same time, the drain current of the second transistor Q3 is: This proportional current circuit allows the photosensitive current of photosensitive transistor Q1 to be transferred to the second transistor Q3.

[0043] Analysis using the formula for the drain current of the second transistor Q3 shows that the required current can be derived simply by considering the width-to-length ratio (W / L) of the second transistor Q3 and the first transistor Q2. This is because the width-to-length ratio (W / L) of the second transistor Q3 is much larger than that of the first transistor Q2 and the photosensitive transistor Q1.

[0044] For example, the aspect ratio (W / L) of the second transistor Q3 can differ from that of the first transistor Q2 by a factor of thousands. Therefore, this method can be used to measure the photosensitive current I of the photosensitive transistor Q1. Q1 By performing a 1,000-fold amplification replacement on the second transistor Q3, the photosensitive current can be effectively increased from the nanoampere (nA) level to the microampere (μA) level, significantly enhancing the photosensitive current.

[0045] In other words, the photosensitive current can be amplified and replaced by thousands of times through the above proportional current circuit, which effectively alleviates the difficulty of selecting operational amplifiers (OPs), makes the selection of operational amplifiers (OPs) more flexible and easier, avoids the selection of high-precision operational amplifiers (OPs), and effectively reduces costs.

[0046] Please refer to some embodiments of this application. Figure 1 and Figure 2 As shown, the flexible circuit board 200 also includes a resistor R and an operational amplifier OP. The first terminal of resistor R is electrically connected to the third power supply signal VDD, and the second terminal of resistor R is electrically connected to the first terminal of the second transistor Q3. The first terminal of the operational amplifier (OP) is electrically connected to the first terminal of the second transistor Q3 and the second terminal of resistor R, and the second terminal of the operational amplifier OP is electrically connected to an analog-to-digital converter (ADC).

[0047] The photocurrent of photosensitive transistor Q1 is amplified and transferred to the second transistor Q3 through a proportional current circuit. The current of the second transistor Q3 is converted into voltage after flowing through resistor R, and then the converted voltage is sent to operational amplifier OP for further amplification through signal lines, and then provided to analog-to-digital converter ADC for analog-to-digital conversion.

[0048] This approach increases the photosensitive current value, resolving the difficulty in selecting operational amplifiers (OPs) and making the selection process easier and more flexible. It avoids the need for high-precision OPs, effectively reducing costs. Furthermore, it improves current interference immunity, making the acquisition circuit design simpler and more reliable.

[0049] In some embodiments of this application, the substrate 110 may be a glass substrate, but is not limited thereto, and may also be a substrate of other materials, such as PI material, etc.

[0050] It should be noted that the substrate 110 has a display area (not shown in the figure) and a non-display area (not shown in the figure). The non-display area surrounds the display area, and the display area has multiple pixel units (not shown in the figure) arranged in an array. The display area is used for display, and the non-display area contains the aforementioned photosensitive transistor Q1 and the first transistor Q2, as shown in the figure. Figure 1 As shown, this is to avoid occupying too many pixel aperture ratios and to ensure display effect.

[0051] In some embodiments of this application, please refer to... Figure 1 As shown, the display device 10 also includes a chip-on-film (COF) 300, through which the flexible circuit board 200 is electrically connected to the display panel 100.

[0052] It is worth mentioning that, please continue to see Figure 1 As shown, the display device 10 also includes a first power signal line 400, a second power signal line 500, a third power signal line 600, a fourth power signal line 700, and a control signal line 800.

[0053] In some embodiments of this application, the first power signal line 400 can release the first power signal VD, the second power signal line 500 can release the second power signal VSS1, the third power signal line 600 can release the third power signal VDD, the fourth power signal line 700 can release the fourth power signal VSS2, and the control signal line 800 can release the control signal VG.

[0054] The signal input terminals of the first power signal line 400, the second power signal line 500, and the control signal line 800 are located on the flexible circuit board 200 and are electrically connected to the photosensitive transistor Q1 and the first transistor Q2 in the non-display area of ​​the display panel 100 through the flip-chip film 300. The third power signal line 600 and the fourth power signal line 700 are located on the flexible circuit board 200.

[0055] It should be noted that the first power signal VD transmitted by the first power signal line 400 and the third power signal VDD transmitted by the third power signal line 600 are high-level signals, while the second power signal VSS1 transmitted by the second power signal line 500 and the fourth power signal VSS2 transmitted by the fourth power signal line 700 are low-level signals. That is, the second power signal line 500 and the fourth power signal line 700 are grounded.

[0056] According to the embodiments of this application, the specific type of the display device 10 is not particularly limited. Any type of display device 10 commonly used in the art can be used, such as liquid crystal displays, mobile devices such as mobile phones and laptops, wearable devices such as watches, VR devices, etc. Those skilled in the art can make appropriate selections according to the specific purpose of the display device, which will not be elaborated here.

[0057] It should be noted that, in addition to the display panel 100 and the flexible circuit board 200, the display device 10 also includes other necessary components and parts. Taking the display as an example, it may also include a housing, power cord, etc. Those skilled in the art can make corresponding additions according to the specific usage requirements of the display device 10, which will not be elaborated here.

[0058] Example 2

[0059] Figure 3 A schematic diagram of the structure of two transistors arranged in parallel according to Embodiment 2 of this application is shown. Figure 4 A circuit diagram showing two transistors arranged in parallel according to Embodiment 2 of this application is shown.

[0060] The difference between Embodiment 2 and Embodiment 1 is that the photosensitive transistor Q1 includes at least two transistors.

[0061] In some embodiments of this application, the photosensitive transistor Q1 includes at least two transistors arranged in parallel, with adjacent transistors spliced ​​together. The at least two transistors arranged in parallel can be formed by the same photomask, that is, at least two transistors arranged in parallel can be fabricated by the same photomask.

[0062] In this configuration, the sources of adjacent transistors are short-circuited, the drains of adjacent transistors are short-circuited, and the gates of adjacent transistors are short-circuited. That is, the sources, drains, and gates of adjacent transistors are on the same straight line.

[0063] It is understandable that the channel width-to-length ratio (W / L) of the phototransistor Q1 is directly proportional to the photocurrent; that is, the larger the channel width-to-length ratio (W / L) of the phototransistor Q1, the larger the photocurrent.

[0064] In some embodiments of this application, the length of the source / drain can be increased by using at least two transistors arranged in parallel, that is, the width W of the channel can be widened, so that the channel width W of the photosensitive transistor Q1 can reach a multiple of the channel width of a single transistor. By widening the channel width W, the channel width-to-length ratio (W / L) of the photosensitive transistor Q1 is effectively increased.

[0065] For example, see Figure 3 and Figure 4As shown, the photosensitive transistor Q1 includes two transistors arranged in parallel, with the source and drain of both transistors having the same distance, i.e., the same channel length L; the source and drain lengths are also the same, i.e., the same channel width W. The two transistors are shorted in the source / drain extension direction, which widens the channel width W of the photosensitive transistor Q1, up to twice the width of a single transistor, thereby effectively increasing the photosensitive current I of the photosensitive transistor Q1. Q1 This is to increase the drain current I of the replaced second transistor Q3. DQ3 .

[0066] It should be noted that by using at least two transistors arranged in parallel in the phototransistor Q1, the photosensitive area can be increased. Under the same ambient light conditions, the photosensitive current I of the phototransistor Q1 fabricated in this way is... Q1 This will improve the photocurrent of the phototransistor Q1. Photocurrent I Q1 The photosensitive current I flows into the proportional current circuit. Q1 The photosensitive current I generated by the photosensitive transistor Q1 is transmitted through the first transistor Q2 in the non-display area of ​​the display panel 100 and the second transistor Q3 on the flexible circuit board. Q1 The current can be boosted from the nanoamp (nA) level to the microamp (μA) or milliamp (mA) level. The amplified current is then converted to voltage via resistor R, and this voltage is provided to the analog-to-digital converter (ADC) for analog-to-digital conversion. In this case, an operational amplifier (OP) is unnecessary for signal amplification; the OP is eliminated, and the voltage converted by the proportional current circuit is directly transmitted to the ADC for analog-to-digital conversion, thus saving the cost of the OP.

[0067] By using two transistors arranged in parallel and employing a proportional current circuit, the photosensitive current can be effectively increased, saving the use of operational amplifiers (OPs), reducing production costs, and improving the current anti-interference capability, making the acquisition circuit design simpler and more reliable.

[0068] In the description of this specification, references to terms such as "some embodiments," "exemplarily," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. The illustrative expressions of the above terms in this specification do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0069] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application. Therefore, any changes or modifications made in accordance with the claims and description of this application should fall within the scope of this patent application.

Claims

1. A display device comprising a display panel and a flexible circuit board, wherein the flexible circuit board is electrically connected to the display panel; characterized in that, The display panel includes a substrate and a photosensitive transistor and a first transistor disposed on the substrate. The control terminal of the photosensitive transistor is electrically connected to a control signal, the first terminal of the photosensitive transistor is electrically connected to a first power signal, the second terminal of the photosensitive transistor is connected to a first node, the control terminal of the first transistor is connected to the first node, the first terminal of the first transistor is electrically connected to the first node, and the second terminal of the first transistor is electrically connected to a second power signal. The flexible circuit board has a second transistor. The control terminal of the second transistor is electrically connected to the first node, the first terminal of the second transistor is electrically connected to a third power signal, and the second terminal of the second transistor is electrically connected to a fourth power signal.

2. The display device according to claim 1, characterized in that, The flexible circuit board is also provided with: A resistor, wherein the first end of the resistor is electrically connected to the third power supply signal, and the second end of the resistor is electrically connected to the first end of the second transistor; An operational amplifier, wherein a first terminal of the operational amplifier is electrically connected to a first terminal of the second transistor and a second terminal of the resistor, and a second terminal of the operational amplifier is electrically connected to an analog-to-digital converter.

3. The display device according to claim 1, characterized in that, The second transistor is a metal-oxide-semiconductor field-effect transistor.

4. The display device according to claim 3, characterized in that, The current of the photosensitive transistor is equal to the drain current of the first transistor; The drain current of the first transistor is: Where, μ n It is electron mobility, C 0x It is the gate oxide capacitance per unit area. It is the ratio of the channel width to the channel length of the first transistor, V. GS It is the voltage from the gate to the source, V th1 It is the threshold voltage.

5. The display device according to claim 4, characterized in that, The gate-to-source voltage of the second transistor is equal to the gate-to-source voltage of the first transistor; The drain current of the second transistor is: Where, μ n It is electron mobility, C 0x It is the gate oxide capacitance per unit area. It is the ratio of the channel width to the channel length of the second transistor, V. GS It is the voltage from the gate to the source, V th2 It is the threshold voltage.

6. The display device according to claim 5, characterized in that, When the turn-on voltages of the first transistor and the second transistor are equal, the drain current of the second transistor is: Wherein, the I Q1 The photosensitive current of the photosensitive transistor is given, and the ratio of the channel width to the channel length of the second transistor is greater than the ratio of the channel width to the channel length of the first transistor.

7. The display device according to claim 1, characterized in that, The substrate has a display area and a non-display area, the non-display area is arranged around the display area, and the photosensitive transistor and the first transistor are arranged in the non-display area.

8. The display device according to claim 7, characterized in that, The photosensitive transistor includes at least two transistors, which are arranged in parallel, with the source, drain, and gate of adjacent transistors shorted together.

9. The display device according to claim 8, characterized in that, The width and length of adjacent transistors are equal.

10. The display device according to claim 1, characterized in that, The display device further includes a crystal-coated film, and the flexible circuit board is electrically connected to the display panel through the crystal-coated film.

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