A MOSFET gate drive protection device

Abstract

This application provides a MOSFET gate drive protection device, relating to the field of silicon carbide technology. It includes a metal plate with a main chip fixedly mounted on its top. A drive signal input module receives externally input drive signals and transmits them to a signal processing module. This effectively isolates external circuits from the protection device, preventing external interference signals from entering the device while ensuring fast and accurate transmission of drive signals. An overvoltage protection module is connected to the MOSFET gate for real-time monitoring of the gate voltage. When the overvoltage protection module detects that the gate voltage exceeds a preset safety threshold, it immediately sends an overvoltage signal to the signal processing module. An overcurrent protection module is connected in series in the MOSFET source circuit to monitor the MOSFET's operating current. When the detected operating current exceeds a preset current threshold, the overcurrent protection module sends an overcurrent signal to the signal processing module.

Description

Technical Field

[0001] This utility model relates to the field of silicon carbide technology, and in particular to a MOSFET gate drive protection device. Background Technology

[0002] MOSFETs, as commonly used power switching devices, are widely used in many electronic circuits such as power management, motor drives, and inverters. In practical applications, the gate drive circuit of a MOSFET plays a crucial role, directly affecting its switching performance and operational reliability.

[0003] However, existing MOSFET gate drive circuits have some shortcomings. On the one hand, when abnormal conditions such as overvoltage or overcurrent occur in the circuit, excessively high voltage may break down the gate oxide layer of the MOSFET, leading to device damage; excessive current may cause the MOSFET to overheat severely, shortening its lifespan. On the other hand, during fast switching, voltage spikes and oscillations may be generated at the gate. These disturbances can affect the normal switching of the MOSFET, or even cause malfunctions, thereby affecting the stability and reliability of the entire circuit system.

[0004] While there are some protection measures for MOSFETs, most of them are complex in structure and expensive. In practical applications, they cannot effectively balance response speed and protection effect, and cannot meet the requirements of modern electronic circuits for efficient and reliable operation of MOSFETs. Therefore, we propose a MOSFET gate drive protection device. Utility Model Content

[0005] In view of this, this application provides a MOSFET gate drive protection device, which solves the above technical problems to a certain extent.

[0006] To achieve the above objectives, the present invention adopts the following technical solution:

[0007] A MOSFET gate drive protection device includes a metal plate. A main chip is fixedly mounted on the top of the metal plate, and a gate, drain, and metal electrode are fixedly mounted on one side of the metal plate. A drive signal input module, an overvoltage protection module, an overcurrent protection module, and a signal processing module are fixedly mounted on the top of the metal plate. The drive signal input module, the overvoltage protection module, and the overcurrent protection module are electrically connected to the signal processing module.

[0008] Preferably, the drive signal input module includes a high-speed optocoupler isolator, which is used for electrical isolation.

[0009] Preferably, the overvoltage protection module includes a Zener diode and a voltage comparator, which are used to monitor the voltage.

[0010] Preferably, the overcurrent protection module includes a current transformer and an operational amplifier, which are used to monitor the current.

[0011] Preferably, the signal processing module includes a processing chip, which is used to integrate and process information sent by other modules.

[0012] Preferably, the metal plate is made of copper.

[0013] Preferably, the signal processing module includes a programmable logic controller (PLC), which is used to combine and process different signals.

[0014] Preferably, the gate, drain, and metal electrode are electrically connected to the main chip.

[0015] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0016] (1) A MOSFET gate drive protection device of the present invention includes a drive signal input module for receiving externally input drive signals and transmitting them to a signal processing module; the drive signal input module adopts a high-speed optocoupler isolator, which can effectively isolate the external circuit from the protection device, prevent external interference signals from entering the device, and ensure fast and accurate transmission of drive signals; the overvoltage protection module is connected to the gate of the MOSFET and is used to monitor the gate voltage in real time; when the overvoltage protection module detects that the gate voltage exceeds the preset safety threshold, it will immediately send an overvoltage signal to the signal processing module; the overcurrent protection module is connected in series in the source circuit of the MOSFET and is used to monitor the operating current of the MOSFET; when the operating current is detected to exceed the preset current threshold, the overcurrent protection module will send an overcurrent signal to the signal processing module.

[0017] (2) A MOSFET gate drive protection device of the present invention comprises a signal processing module connected to a drive signal input module, an overvoltage protection module, and an overcurrent protection module, respectively, for receiving drive signals, overvoltage signals, and overcurrent signals; the signal processing module performs logical judgment and processing based on the received signals; when an overvoltage signal or an overcurrent signal is received, the signal processing module will immediately adjust the drive signal to reduce the gate voltage of the MOSFET or cut off the drive signal, thereby protecting the MOSFET from damage; the signal processing module adopts a programmable logic controller (PLC), which has powerful logic processing capabilities and fast response speed, and can flexibly process different signal combinations; the signal processing module is connected to the gate of the MOSFET and is used to output the processed drive signal to the gate of the MOSFET to drive the switching action of the MOSFET. Attached Figure Description

[0018] Figure 1 This is a three-dimensional structural diagram of a MOSFET gate drive protection device proposed in this utility model;

[0019] Figure 2 A schematic diagram of a frame-type portion structure of a MOSFET gate drive protection device according to an embodiment of this application is shown;

[0020] Figure 3 A schematic diagram of a frame-type portion structure of a MOSFET gate drive protection device according to an embodiment of this application is shown;

[0021] Figure 4 A schematic diagram of the frame-type structure of a MOSFET gate drive protection device according to an embodiment of this application is shown.

[0022] Figure label:

[0023] 1. Metal plate; 2. Main chip; 3. Gate; 4. Drain; 5. Metal electrode; 6. Drive signal input module; 7. High-speed optocoupler isolator; 8. Overvoltage protection module; 9. Zener diode; 10. Voltage comparator; 11. Overcurrent protection module; 12. Current transformer; 13. Operational amplifier; 14. Signal processing module. Detailed Implementation

[0024] To further understand the invention content, features and effects of this utility model, the following embodiments are provided, and detailed descriptions are given below in conjunction with the accompanying drawings;

[0025] The structure of this utility model will now be described in detail with reference to the accompanying drawings.

[0026] refer to Figure 1-4A MOSFET gate drive protection device includes a metal plate 1, a main chip 2 fixedly mounted on the top of the metal plate 1, a gate 3, a drain 4 and a metal electrode 5 fixedly mounted on one side of the metal plate 1, a drive signal input module 6, an overvoltage protection module 8, an overcurrent protection module 11 and a signal processing module 14 fixedly mounted on the top of the metal plate 1, and the drive signal input module 6, the overvoltage protection module 8 and the overcurrent protection module 11 are electrically connected to the signal processing module 14.

[0027] In this embodiment, the drive signal input module 6 includes a high-speed optocoupler isolator 7, which is used for electrical isolation. The drive signal input module 6 is used to receive externally input drive signals and transmit them to the signal processing module 14. The drive signal input module 6 uses a high-speed optocoupler isolator 7, which can effectively isolate the external circuit from the protection device, prevent external interference signals from entering the device, and ensure the fast and accurate transmission of drive signals.

[0028] In this embodiment, the overvoltage protection module 8 includes a Zener diode 9 and a voltage comparator 10, which are used to monitor the voltage. The overvoltage protection module 8 is connected to the gate 3 of the MOSFET and is used to monitor the gate voltage in real time. When the overvoltage protection module 8 detects that the gate voltage exceeds a preset safety threshold, it will immediately send an overvoltage signal to the signal processing module 14. The overvoltage protection module 8 is composed of a Zener diode 9 and a voltage comparator 10. The breakdown voltage of the Zener diode 9 is set as the upper limit of the safe voltage of the MOSFET gate 3. When the gate voltage exceeds this value, the Zener diode 9 is turned on, and the overvoltage signal is output through the voltage comparator 10.

[0029] In this embodiment, the overcurrent protection module 11 includes a current transformer 12 and an operational amplifier 13, which are used to monitor the current. The signal processing module 14 is connected to the drive signal input module 6, the overvoltage protection module 8, and the overcurrent protection module 11, respectively, and is used to receive drive signals, overvoltage signals, and overcurrent signals. The signal processing module 14 performs logical judgment and processing based on the received signals. When an overvoltage signal or an overcurrent signal is received, the signal processing module 14 will immediately adjust the drive signal to reduce the gate voltage of the MOSFET or cut off the drive signal, thereby protecting the MOSFET from damage.

[0030] In this embodiment, the signal processing module 14 includes a processing chip, which is used to integrate and process information sent by other modules.

[0031] In this embodiment, the metal plate 1 is made of copper; the copper material allows the metal plate 1 to have low resistance, and its signal will not be interfered with during transmission.

[0032] In this embodiment, the signal processing module 14 includes a programmable logic controller (PLC), which is used to process different signals in combination. The signal processing module 14 adopts a programmable logic controller (PLC), which has powerful logic processing capabilities and fast response speed, and can flexibly process different signal combinations.

[0033] In this embodiment, the gate 3, drain 4, and metal electrode 5 are electrically connected to the main chip 2; the signal processing module 14 is connected to the gate 3 of the MOSFET and is used to output the processed drive signal to the gate 3 of the MOSFET to drive the switching action of the MOSFET. It can provide sufficient drive current and fast switching speed to ensure that the MOSFET can perform accurate and fast switching operation.

[0034] Specifically, the drive signal input module 6 receives externally input drive signals and transmits them to the signal processing module 14. The drive signal input module 6 uses a high-speed optocoupler isolator 7, which effectively isolates the external circuit from the protection device, preventing external interference signals from entering the device while ensuring fast and accurate transmission of the drive signal. The overvoltage protection module 8 is connected to the gate 3 of the MOSFET and is used to monitor the gate voltage in real time. When the overvoltage protection module 8 detects that the gate voltage exceeds a preset safety threshold, it immediately sends an overvoltage signal to the signal processing module 14. The overvoltage protection module 8 consists of a Zener diode 9 and a voltage comparator 10. The breakdown voltage of the Zener diode 9 is set to MO. The upper limit of the safe gate voltage of SFET 3. When the gate voltage exceeds this value, Zener diode 9 turns on, and the overvoltage signal is output through voltage comparator 10. Overcurrent protection module 11 is connected in series in the source circuit of MOSFET to monitor the operating current of MOSFET. When the operating current is detected to exceed the preset current threshold, overcurrent protection module 11 will send an overcurrent signal to signal processing module 14. Overcurrent protection module 11 uses current transformer 12 and operational amplifier 13. Current transformer 12 can accurately detect changes in source current. Operational amplifier 13 converts the current signal into a voltage signal and compares it with the voltage corresponding to the preset current threshold. When the threshold is exceeded, an overcurrent signal is output.

[0035] The signal processing module 14 is connected to the drive signal input module 6, the overvoltage protection module 8, and the overcurrent protection module 11, respectively, and is used to receive drive signals, overvoltage signals, and overcurrent signals. The signal processing module 14 performs logical judgment and processing based on the received signals. When an overvoltage signal or an overcurrent signal is received, the signal processing module 14 will immediately adjust the drive signal to reduce the gate voltage of the MOSFET or cut off the drive signal, thereby protecting the MOSFET from damage. The signal processing module 14 adopts a programmable logic controller (PLC), which has powerful logic processing capabilities and fast response speed, and can flexibly process different signal combinations. The signal processing module 14 is connected to the gate 3 of the MOSFET and is used to output the processed drive signal to the gate 3 of the MOSFET to drive the switching action of the MOSFET. It can provide sufficient drive current and fast switching speed to ensure that the MOSFET can perform accurate and fast switching operations.

[0036] It should be noted that although embodiments of the present invention have been shown and described, those skilled in the art will understand that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the present invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A MOSFET gate drive protection device, characterized in that, include: A metal plate (1) is provided, on the top of which a main chip (2) is fixedly mounted. A gate (3), a drain (4) and a metal electrode (5) are fixedly mounted on one side of the metal plate (1). A drive signal input module (6), an overvoltage protection module (8), an overcurrent protection module (11) and a signal processing module (14) are fixedly mounted on the top of the metal plate (1). The drive signal input module (6), the overvoltage protection module (8) and the overcurrent protection module (11) are electrically connected to the signal processing module (14).

2. The MOSFET gate drive protection device according to claim 1, characterized in that, The drive signal input module (6) includes a high-speed optocoupler isolator (7), which is used for electrical isolation.

3. The MOSFET gate drive protection device according to claim 1, characterized in that, The overvoltage protection module (8) includes a Zener diode (9) and a voltage comparator (10), which are used to monitor the voltage.

4. A MOSFET gate drive protection device according to claim 1, characterized in that, The overcurrent protection module (11) includes a current transformer (12) and an operational amplifier (13), which are used to monitor the current.

5. A MOSFET gate drive protection device according to claim 2, characterized in that, The signal processing module (14) includes a processing chip, which is used to integrate and process information sent by other modules.

6. A MOSFET gate drive protection device according to claim 1, characterized in that, The metal plate (1) is made of copper.

7. A MOSFET gate drive protection device according to claim 1, characterized in that, The signal processing module (14) includes a programmable logic controller (PLC) for combining and processing different signals.

8. A MOSFET gate drive protection device according to claim 1, characterized in that, The gate (3), drain (4) and metal electrode (5) are electrically connected to the main chip (2).

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