Wafer carrier and thin film deposition apparatus

Abstract

The utility model provides a kind of wafer bearing device and thin film deposition equipment, wafer bearing device includes heating disc and bearing ring, bearing ring is sleeved in heating disc outside, and with heating disc upper and lower sliding connection, the height of bearing ring is greater than the height of heating disc, the upper surface of bearing ring is equipped with multiple interval arrangement's support gasket, support gasket is set by the upper surface of bearing ring upward protruding, for supporting wafer;Wherein, drive heating disc to move to its bottom and the top end of bearing ring when clamping, heating disc upper surface is higher or equal to support gasket upper surface.This application is by setting bearing ring in heating disc outside, and support gasket is equipped on bearing ring, support gasket is supported to wafer, to optimize the layout of heating wire in heating disc, simple structure, and improve the uniformity of heating disc temperature;While bearing ring has greater weight, so that bearing ring and heating disc are more smooth in movement, improve the stability of wafer bearing device when operating and production efficiency when semiconductor production.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and in particular to a wafer carrier device and a thin film deposition equipment. Background Technology

[0002] In semiconductor manufacturing processes, wafer transfer and positioning are critical steps. Currently, when platform robots transfer wafers to the reaction chamber of thin-film deposition equipment, they commonly use a method of first placing the wafer on a support pin on a heated plate. The specific process is as follows: after the wafer lands on the support pin, the heated plate rises to transfer the wafer to its surface, and continues to lift it to the process reaction location for film growth; after the process is completed, the heated plate descends, the wafer falls back onto the support pin, and is then picked up by the platform robot, completing the entire wafer transfer process.

[0003] However, this traditional method of placing support pins on the heating plate has many technical drawbacks. From a heat conduction perspective, the presence of the support pins hinders the rational layout of the heating wires inside the heating plate, disrupts the temperature field distribution on the surface of the heating plate, leading to uneven heating of the wafer, affecting the uniformity and consistency of thin film growth, and thus reducing the yield of semiconductor devices. In terms of mechanical structure, the relative movement between the heating plate and the support pins is prone to jamming, requiring extremely high precision in the fitting of the mounting holes, increasing the difficulty of processing and assembly. At the same time, to ensure the smooth drop of the support pins, an additional weight needs to be installed under them, which not only increases equipment cost and complexity but may also introduce additional mechanical failure risks, seriously restricting the stability and production efficiency of semiconductor manufacturing equipment. Utility Model Content

[0004] The embodiments of this utility model provide a wafer carrier device and a thin film deposition equipment to solve the problems of uneven heating plate temperature and complex structure, thereby improving the operational stability and production efficiency of the equipment.

[0005] This utility model provides a wafer carrier device, which includes:

[0006] Heating plate;

[0007] A support ring is sleeved on the outside of the heating plate and is slidably connected to the heating plate. The height of the support ring is greater than the height of the heating plate. The upper surface of the support ring is provided with a plurality of spaced support pads. The support pads protrude upward from the upper surface of the support ring and are used to support the wafer.

[0008] When the heating plate is driven to move upwards until its bottom end engages with the top end of the bearing ring, the upper surface of the heating plate is higher than or equal to the upper surface of the support pad.

[0009] In the wafer carrier device provided by this utility model, the heating plate includes a heating part and a snap-fit ​​part. The snap-fit ​​part extends horizontally outward from the bottom end of the heating part and is used to snap-fit ​​with the top end of the carrier ring.

[0010] In the wafer carrier device provided by this utility model, the snap-fit ​​portion is circumferentially disposed at the bottom end of the heating portion along the circumferential direction of the heating portion.

[0011] In the wafer carrier device provided by this utility model, the carrier ring is provided with a through hole and a mounting groove. The through hole passes through the mounting groove and the upper surface of the carrier ring. The diameter of the through hole is smaller than the diameter of the snap-fit ​​part. The mounting groove is located inside the carrier ring and is used to install the heating plate.

[0012] In the wafer carrier device provided by this utility model, the support pad includes a vertical section and a horizontal section. The vertical section extends vertically upward from the sidewall of the through hole. One end of the horizontal section is connected to the vertical section, and the other end extends horizontally toward the center of the through hole. The horizontal section is used to support the wafer.

[0013] In the wafer carrier device provided by this utility model, the upper surface of the horizontal section is provided with a downwardly recessed positioning groove, which is located on the side of the horizontal section near the center of the through hole, and is used to position the wafer.

[0014] In the wafer carrier device provided by this utility model, the upper surface of the heating part is provided with a plurality of downwardly recessed embedding grooves, the plurality of embedding grooves are correspondingly arranged with the plurality of support pads, and the embedding grooves extend from the edge of the heating part toward the center of the heating part for embedding the horizontal segment.

[0015] In the wafer carrier device provided by this utility model, a plurality of vertically extending grooves are provided on the outer wall of the heating part, the plurality of grooves and the plurality of support pads are correspondingly arranged, and the grooves are slidably connected to the vertical section.

[0016] In the wafer carrier device provided by this utility model, the carrier ring is provided with three support pads, and the three support pads are circumferentially spaced and evenly arranged along the sidewall of the through hole.

[0017] This utility model also provides a thin film deposition apparatus, which includes:

[0018] A wafer carrier device, wherein the wafer carrier device is any one of the wafer carrier devices described above.

[0019] This application provides a support ring on the outside of the heating plate and a support pad on the support ring. The support pad supports the wafer, preventing it from affecting the layout of the heating wires inside the heating plate. The heating plate has a simple structure and improves the temperature uniformity of the heating plate. At the same time, the support ring has a greater weight, which makes the movement of the support ring and the heating plate smoother and avoids jamming when the support ring and the heating plate move relative to each other. This improves the stability of the wafer carrier device during operation and the production efficiency of semiconductor manufacturing. Attached Figure Description

[0020] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figures 1a to 1c These are structural diagrams of the wafer carrier device from various perspectives in embodiments of this utility model;

[0022] Figures 2a to 2c These are exploded views of the wafer carrier device from various perspectives in embodiments of this utility model;

[0023] Figure 3 This is a cross-sectional view of the thin film deposition apparatus in an embodiment of this utility model;

[0024] Figure 4 for Figure 3 Enlarged view of point A in the middle;

[0025] Figures 5a to 5b This is a structural diagram of the wafer carrier device from various perspectives in another embodiment of the present invention;

[0026] Figure 6 This is a cross-sectional view of a thin film deposition apparatus according to another embodiment of the present invention;

[0027] Figure 7 for Figure 6 Enlarged view of point B in the middle.

[0028] The labels for the attached figures are as follows:

[0029] 1. Heating plate; 11. Heating section; 111. Embedded groove; 112. Sliding groove; 12. Snap-fit ​​part; 2. Bearing ring; 21. Support pad; 211. Vertical section; 212. Horizontal section; 2122. Positioning groove; 22. Through hole; 23. Mounting groove; 3. Wafer; 4. Thin film deposition equipment. Detailed Implementation

[0030] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The preferred embodiments of this utility model will now be described in detail with reference to the accompanying drawings.

[0031] Reference Figures 1a to 7 The diagram illustrates an embodiment of the wafer carrier device and thin film deposition equipment 4 of this invention. The wafer carrier device includes a heating plate 1 and a carrier ring 2. The carrier ring 2 is sleeved on the outside of the heating plate 1 and is slidably connected to the heating plate 1 vertically. The height of the carrier ring 2 is greater than the height of the heating plate 1. The upper surface of the carrier ring 2 is provided with a plurality of spaced support pads 21. The support pads 21 protrude upward from the upper surface of the carrier ring 2 and are used to support the wafer 3. When the heating plate 1 is driven to move upward until its bottom end engages with the top end of the carrier ring 2, the upper surface of the heating plate 1 is higher than or equal to the upper surface of the support pads 21.

[0032] Specifically, the wafer carrier is one of the important structures in semiconductor manufacturing equipment, mainly used to support the wafer 3. Especially during the wafer 3 coating process, the wafer carrier is installed in the reaction chamber. The robot arm transfers the wafer 3 to the wafer carrier through the transfer channel. The wafer carrier supports and moves the wafer 3 to the coating position in the reaction chamber, while heating the wafer 3 so that the reaction gas produces a chemical reaction on the surface of the wafer 3 to form a thin film, thereby improving the efficiency and uniformity of the wafer 3 coating.

[0033] The wafer carrier device in this embodiment includes a heating plate 1 and a carrier ring 2. The heating plate 1 is used to support the wafer 3 to the coating position and heat the wafer 3, thereby promoting the coating efficiency and coating uniformity of the wafer 3. The carrier ring 2 is used to support the wafer 3 so that the robot can easily grasp and place the wafer 3 during transportation, ensuring the quality of the wafer 3 and avoiding interference between the robot and the heating plate 1.

[0034] The support ring 2 is sleeved on the outside of the heating plate 1, and the support ring 2 extends circumferentially along the heating plate 1, that is, the support ring 2 is arranged around the outside of the heating plate 1, and the support ring 2 is slidably connected to the heating plate 1 vertically, that is, the heating plate 1 slides vertically inside the support ring 2, so that the upper surface of the heating plate 1 can rise above the support ring 2 to support the wafer 3, and the heating plate 1 can also descend below the upper surface of the support ring 2, so that the wafer 3 falls onto the support ring 2; in order to prevent the heating plate 1 from detaching from the support ring 2 during the upward sliding process, this embodiment... In this example, the bottom end of the heating plate 1 is engaged with the top end of the support ring 2. The height of the support ring 2 is greater than the height of the heating plate 1, so that the heating plate 1 can be completely located inside the support ring 2. When the heating plate 1 descends towards the bottom of the reaction chamber, the bottom end of the support ring 2 contacts the bottom end of the reaction chamber first, preventing the support ring 2 from continuing to move down with the heating plate 1. When the heating plate 1 continues to move down to the lowest position, the wafer 3 on the heating plate 1 will fall to the top end of the support ring 2, so that the support ring 2 supports the wafer 3, making it convenient for the robot arm to grasp the wafer 3.

[0035] The upper surface of the support ring 2 is provided with a plurality of support pads 21. The plurality of support pads 21 are arranged at intervals along the circumference of the support ring 2 on the inner edge of the support ring 2, that is, the plurality of support pads 21 are arranged close to the heating plate 1. The support pads 21 are convex upward from the upper surface of the support ring 2. The support pads 21 are used to support the wafer 3, so that when the wafer 3 is supported by the support pads 21, there is a certain distance between the wafer 3 and the upper surface of the support ring 2, that is, there is a gap between the wafer 3 and the upper surface of the support ring 2. Therefore, it is convenient for the robot to grasp the wafer 3 through the gap, avoiding interference between the robot and the support ring 2. The wafer carrying device has high structural stability and improves the efficiency of the robot in transferring the wafer 3.

[0036] In the initial state of semiconductor processing, the heating plate 1 is located inside the support ring 2, with the bottom end of the support ring 2 abutting against the bottom end of the reaction chamber. The support pad 21 is located above the heating plate 1. Therefore, the robotic arm picks up the wafer 3, passes it through the transfer channel into the reaction chamber, and places the wafer 3 on the support pad 21. The robotic arm then moves to the outside of the reaction chamber and seals it. Next, the heating plate 1 is driven to move upwards within the internal space of the support ring 2, while the support ring 2 remains stationary. This continues until the bottom end of the heating plate 1 engages with the top end of the support ring 2. At this point, the upper surface of the heating plate 1 is higher than or flush with the upper surface of the support pad 21, causing the wafer 3 on the support pad 21 to fall onto the upper surface of the heating plate 1. At this point, the wafer 3 is tightly attached to the upper surface of the heating plate 1. The wafer 3 and the support ring 2 are attached together, and the heating plate 1 drives the wafer 3 and the support ring 2 to continue moving upward. Finally, the upper surface of the heating plate 1, the upper surface of the support ring 2, and the wafer 3 are all located at the coating position. The heating plate 1 heats the wafer 3, and various reactive gases form a thin film on the surface of the wafer 3, thereby performing the coating process. After the wafer 3 is coated, the heating plate 1 drives the wafer 3 and the support ring 2 to move downward until the bottom end of the support ring 2 abuts against the bottom end of the reaction chamber. At this time, the support ring 2 remains stationary, and the heating plate 1 drives the wafer 3 to continue moving downward until the wafer 3 falls onto the support pad 21. At this time, the support pad 21 supports the wafer 3. The heating plate 1 continues to descend to the initial position, that is, after the heating plate 1 is located inside the support ring 2, the heating plate 1 stops moving. The robot arm picks up the wafer 3 from the support pad 21 and transfers the wafer 3 to the next process through the transfer channel.

[0037] This application provides a support ring 2 on the outside of the heating plate 1, and a support pad 21 on the support ring 2. The support pad 21 supports the wafer 3, thus preventing the support pad 21 from affecting the layout of the heating wires inside the heating plate 1. The structure of the heating plate 1 is simple, and the temperature uniformity of the heating plate 1 is improved. At the same time, the support ring 2 has a greater weight, so that the support ring 2 and the heating plate 1 move more smoothly during the movement, avoiding jamming when the support ring 2 and the heating plate 1 move relative to each other, thereby improving the stability of the wafer carrier device during operation and the production efficiency of semiconductor manufacturing.

[0038] In one embodiment, reference is made to Figures 2a to 3 , Figure 6As shown, the heating plate 1 includes a heating part 11 and a locking part 12. The locking part 12 extends horizontally outward from the bottom end of the heating part 11 and is used to lock onto the top end of the support ring 2. Specifically, the heating plate 1 includes a heating part 11 and a locking part 12. The heating part 11 supports and heats the wafer 3. The locking part 12 is located at the bottom end of the heating part 11 and extends horizontally outward from the bottom end of the heating part 11, that is, the locking part 12 is similar to the outer edge of the bottom end of the heating part 11. The locking part 12 is used to lock onto the top end of the support ring 2, thereby preventing the heating plate 1 from detaching from the support ring 2, ensuring that the heating plate 1 slides on the support ring 2, and improving the stability of the heating plate 1 when sliding. Moreover, the locking part 12 and the heating part 11 do not interfere with each other, improving the structural stability of the heating plate 1. The heating wire of the heating plate 1 is arranged in the heating part 11 to ensure the uniformity of heating of the heating plate 1.

[0039] In a specific embodiment, refer to Figures 2a to 3 , Figure 6 As shown, the latching portion 12 is circumferentially disposed at the bottom end of the heating portion 11. Specifically, the latching portion 12 extends circumferentially along the bottom end of the heating portion 11 and is circumferentially disposed at the bottom end of the heating portion 11 to increase the latching area between the latching portion 12 and the top end of the support ring 2, thereby improving the stability of the connection between the heating plate 1 and the support ring 2, further preventing the heating plate 1 from detaching from the support ring 2, improving the structural stability of the wafer carrier device, and the structure of the heating plate 1 is simple.

[0040] In one embodiment, reference is made to Figure 1b , Figures 2a to 3 , Figure 6 As shown, the support ring 2 has a through hole 22 and a mounting groove 23. The through hole 22 penetrates the mounting groove 23 and the upper surface of the support ring 2. The diameter of the through hole 22 is smaller than the diameter of the snap-fit ​​part 12. The mounting groove 23 is located inside the support ring 2 and is used to install the heating plate 1. Specifically, the support ring 2 has a through hole 22 and a mounting groove 23. The through hole 22 is located at the top of the support ring 2 and penetrates the upper surface of the support ring 2 and the mounting groove 23. The mounting groove 23 is located inside the support ring 2 and is used to install the heating plate 1. That is, the diameter of the mounting groove 23 is greater than or equal to the diameter of the snap-fit ​​part 12, so that the heating plate 1 can be completely located inside the mounting groove 23. The diameter of the through hole 22 is smaller than the diameter of the snap-fit ​​part 12, so that the snap-fit ​​part 12 cannot slide through the through hole 22 to the top of the support ring 2, that is, the snap-fit ​​part 12 is secured to the top of the support ring 2.

[0041] When the heating plate 1 slides upward, the heating part 11 passes through the through hole 22 and is located above the upper surface of the support ring 2. The locking part 12 is locked below the through hole 22 to prevent the heating plate 1 from detaching from the support ring 2. At this time, the wafer 3 falls on the upper surface of the heating part 11. When the heating plate 1 continues to move upward, the locking part 12 and the top end of the support ring 2 abut together. Therefore, the heating plate 1 can drive the support ring 2 to move upward until it reaches the coating position. When the heating plate 1 descends, since the locking part 12 and the top end of the support ring 2 abut together, the heating plate 1 can drive the support ring 2 to move downward synchronously until the bottom end of the support ring 2 abuts the bottom end of the reaction chamber. At this time, the heating plate 1 continues to move downward, and the locking part 12 separates from the top end of the support ring 2. Therefore, the heating part 11 passes through the through hole 22 and moves downward toward the mounting groove 23, so that the wafer 3 falls onto the support pad 21.

[0042] The structure of the bearing ring 2 is simple, and by setting the diameter of the through hole 22 to be smaller than the diameter of the snap-fit ​​part 12, the heating plate 1 is snapped onto the bearing ring 2, thus preventing the two from separating. The connection method is simple and the stability is high.

[0043] More specifically, in this embodiment, the mounting groove 23 is formed by the bottom end of the bearing ring 2 being recessed upwards. Therefore, when installing the bearing ring 2 and the heating plate 1, the bearing ring 2 can be directly fitted onto the outside of the heating plate 1 from top to bottom, making the installation method simple. When disassembling, the bearing ring 2 can be directly removed from bottom to top, making disassembly simple and the installation and disassembly efficiency high.

[0044] In one embodiment, reference is made to Figures 1b to 7 As shown, the support pad 21 includes a vertical section 211 and a horizontal section 212. The vertical section 211 extends vertically upward from the side wall of the through hole 22. One end of the horizontal section 212 is connected to the vertical section 211, and the other end extends horizontally toward the center of the through hole 22. The horizontal section 212 is used to support the wafer 3. Specifically, the support pad 21 includes a vertical section 211 and a horizontal section 212. The vertical section 211 extends vertically upward from the sidewall of the through hole 22, so that the top end of the vertical section 211 is at a certain distance from the upper surface of the support ring 2, thereby avoiding interference between the robot and the support ring 2. One end of the horizontal section 212 is fixedly connected to the top end of the vertical section 211, and the other end of the horizontal section 212 extends horizontally toward the center of the through hole 22. The horizontal section 212 is used to support the wafer 3 so that the wafer 3 can be placed horizontally on the support pad 21. The support pad 21 has an inverted "L" structure, which is simple in structure and provides high stability for supporting the wafer 3.

[0045] In a specific embodiment, refer to Figure 2a , Figure 2b and Figure 4 , Figure 7 As shown, the upper surface of the horizontal segment 212 is provided with a downwardly recessed positioning groove 2122. The positioning groove 2122 is located on the side of the horizontal segment 212 near the center of the through hole 22, and is used to position the wafer 3. Specifically, the horizontal segment 212 is provided with a positioning groove 2122, which is used to position the wafer 3 and prevent the wafer 3 from shifting. The positioning groove 2122 is located on the side of the horizontal segment 212 near the center of the through hole 22, and the positioning groove 2122 is formed by the downward indentation of the upper surface of the horizontal segment 212, thereby forming a step on the upper surface of the horizontal segment 212. The horizontal segment 212 is lower on the side where the positioning groove 2122 is located, and higher on the other side. Therefore, when the wafer 3 is placed on the upper surface of the horizontal segment 212, one side of the wafer 3 is located on the... Within the positioning groove 2122, the outer edge of the wafer 3 abuts against the side wall of the positioning groove 2122 away from the center of the through hole 22. This restricts the outer edge of the wafer 3 to be positioned on the horizontal section 212 of the plurality of support pads 21 by the positioning grooves 2122 of the plurality of support pads 21 at intervals. This prevents the wafer 3 from deviating from its fixed position when it falls on the support pads 21, thus preventing the wafer 3 from falling or becoming misaligned when it falls onto the heating plate 1, which would affect the coating quality. At the same time, it also prevents the wafer 3 from shaking when it is on the support pads 21, which would affect subsequent coating operations.

[0046] In one embodiment, reference is made to Figures 2a to 2b , Figure 4As shown, the upper surface of the heating part 11 is provided with a plurality of downwardly recessed embedding grooves 111. The plurality of embedding grooves 111 are correspondingly arranged with the plurality of support pads 21. The embedding grooves 111 extend from the edge of the heating part 11 toward the center of the heating part 11 and are used to embed the horizontal segment 212. Specifically, the upper surface of the heating part 11 is provided with a plurality of embedding grooves 111, which are formed by a downward indentation of the upper surface of the heating part 11. The plurality of embedding grooves 111 are arranged in a one-to-one correspondence with the positions of the plurality of support pads 21, and the embedding grooves 111 extend from the edge of the heating part 11 toward the center of the heating part 11. The embedding grooves 111 are adapted to the horizontal sections 212 of the support pads 21, so that when the heating plate 1 moves to the point where its upper surface is flush with the horizontal section 212, the horizontal section 212 will be embedded in the embedding grooves 111, thereby causing the temperature of the wafer 3 on the horizontal section 212 to fall on the upper surface of the heating part 11, improving the fit between the heating plate 1 and the carrier ring 2, making the connection stability between the heating plate 1 and the carrier ring 2 higher, and improving the structural stability of the wafer carrier device; at the same time, it can also integrate the structure of the wafer carrier device, making its volume small.

[0047] In a specific embodiment, refer to Figures 2a to 2b , Figure 4 As shown, the outer wall of the heating part 11 is provided with a plurality of vertically extending grooves 112 extending from top to bottom. The plurality of grooves 112 and the plurality of support pads 21 are correspondingly arranged, and the grooves 112 are slidably connected to the vertical section 211. Specifically, the heating part 11 is also provided with a plurality of grooves 112, the positions of the plurality of grooves 112 and the support pads 21 are one-to-one, and the grooves 112 are used to limit the sliding of the vertical section 211; the grooves 112 extend vertically downward from the top end of the heating part 11 to the bottom end of the heating part 11, and the grooves 112 are provided on the outer wall of the heating part 11, formed by the inward indentation of the outer wall of the heating part 11; when the heating plate 1 slides to abut against the side wall of the through hole 22 The vertical segment 211 is embedded in the sliding groove 112, and the vertical segment 211 is slidably connected to the sliding groove 112. The sliding groove 112 has a limiting function for the vertical segment 211, so that the vertical segment 211 can slide up and down in the sliding groove 112, which improves the stability and smoothness of the sliding of the heating plate 1 and the bearing ring 2, and prevents the heating plate 1 from deviating from the position of the support pad 21 during the movement, thereby ensuring that the wafer 3 on the support pad 21 can be accurately and stably placed on the heating plate 1.

[0048] In one embodiment, reference is made to Figures 1a to 2cAs shown, the bearing ring 2 is provided with three support pads 21, which are spaced apart and evenly distributed along the circumferential sidewall of the through hole 22. Specifically, in this embodiment, the bearing ring 2 is provided with three support pads 21, which are spaced apart and evenly distributed along the circumferential sidewall of the through hole 22. The tops of the three support pads 21 are higher than the tops of the through hole 22. The three support pads 21 work together to support the wafer 3, ensuring improved stability during support without increasing cost.

[0049] This embodiment also provides a thin film deposition apparatus 4, which includes a wafer carrier device. The wafer carrier device can be any type of wafer carrier device provided by this utility model. Since the specific structure and working principle of the wafer carrier device have been described in detail in the previous specification, they will not be repeated here for the sake of brevity.

[0050] The thin film deposition equipment 4 in this embodiment adopts the wafer carrier device provided by this utility model. The wafer carrier device has a simple structure, so the cost of the thin film deposition equipment 4 is low. The risk of jamming of the heating plate 1 and the carrier ring 2 is low, which makes the operation of the wafer carrier device smooth and thus improves the stability and production efficiency of the thin film deposition equipment 4. In addition, the layout of the heating wires inside the heating plate 1 is optimized, which improves the temperature uniformity of the heating plate 1 and thus improves the production quality of the thin film deposition equipment 4.

[0051] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this utility model, and these modifications or substitutions should all be covered within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.

Claims

1. A wafer carrier device, characterized in that, include: Heating plate; A support ring is sleeved on the outside of the heating plate and is slidably connected to the heating plate. The height of the support ring is greater than the height of the heating plate. The upper surface of the support ring is provided with a plurality of spaced support pads. The support pads protrude upward from the upper surface of the support ring and are used to support the wafer. When the heating plate is driven to move upwards until its bottom end engages with the top end of the bearing ring, the upper surface of the heating plate is higher than or equal to the upper surface of the support pad.

2. The wafer carrier device according to claim 1, characterized in that, The heating plate includes a heating part and a snap-fit ​​part. The snap-fit ​​part extends horizontally outward from the bottom end of the heating part and is used to snap-fit ​​with the top end of the bearing ring.

3. The wafer carrier device according to claim 2, characterized in that, The snap-fit ​​portion is circumferentially disposed at the bottom end of the heating portion along the circumference of the heating portion.

4. The wafer carrier device according to claim 2, characterized in that, The bearing ring is provided with a through hole and a mounting groove. The through hole passes through the mounting groove and the upper surface of the bearing ring. The diameter of the through hole is smaller than the diameter of the snap-fit ​​part. The mounting groove is located inside the bearing ring and is used to install the heating plate.

5. The wafer carrier device according to claim 4, characterized in that, The support pad includes a vertical section and a horizontal section. The vertical section extends vertically upward from the sidewall of the through hole. One end of the horizontal section is connected to the vertical section, and the other end extends horizontally toward the center of the through hole. The horizontal section is used to support the wafer.

6. The wafer carrier device according to claim 5, characterized in that, The upper surface of the horizontal section is provided with a downwardly recessed positioning groove, which is located on the side of the horizontal section near the center of the through hole and is used to position the wafer.

7. The wafer carrier device according to claim 5, characterized in that, The upper surface of the heating element is provided with a plurality of downwardly recessed embedding grooves, which are correspondingly arranged with the plurality of support pads. The embedding grooves extend from the edge of the heating element toward the center of the heating element and are used to embed the horizontal segment.

8. The wafer carrier device according to claim 5, characterized in that, The outer wall of the heating section is provided with a plurality of vertically extending grooves from top to bottom. The plurality of grooves and the plurality of support pads are correspondingly arranged, and the grooves are slidably connected to the vertical section.

9. The wafer carrier device according to claim 4, characterized in that, The bearing ring is provided with three support pads, which are spaced apart and evenly arranged circumferentially along the sidewall of the through hole.

10. A thin film deposition apparatus, characterized in that, include: A wafer carrier device, wherein the wafer carrier device is the wafer carrier device according to any one of claims 1-9.

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