A high voltage direct current support capacitor electrode structure

Abstract

The utility model discloses a kind of high-voltage direct-current support capacitor electrode structures, electrode structure mainly by electrode structure including core rod, first layer high square resistance metallized film, second layer high square resistance metallized film, first spraying gold layer, second spraying gold layer and outer film, first layer high square resistance metallized film includes first base film and first evaporation layer, and first evaporation layer includes first edge thickening area, first active area, second active area, first intermediate screen belt, third active area, fourth active area, fifth active area and first edge screen belt, second layer high square resistance metallized film includes second base film and second evaporation layer, and second evaporation layer includes second edge thickening area, sixth active area, seventh active area, second intermediate screen belt, eighth active area, ninth active area, tenth active area and second edge screen belt.The utility model simple structure, manufacture aspect, can satisfy high-voltage direct-current support capacitor high long-term safe and reliable operation.

Description

Technical Field

[0001] This utility model belongs to the field of capacitor design technology, specifically relating to a high-voltage DC supported capacitor electrode structure. Background Technology

[0002] DC support capacitors are key components of converters, primarily serving functions such as voltage stabilization and filtering. Currently, dry-type DC support capacitors are widely used in new energy, rail transportation, and smart grid sectors. These capacitors are characterized by their dry-type structure, high voltage rating, and large capacitance.

[0003] The rated voltage of the DC support capacitor depends on the IGBT device voltage of the converter power module. Currently, the main IGBT device voltage levels are 3300V and 4500V. In recent years, domestic and foreign research institutions and device manufacturers have conducted extensive research on high-voltage, high-power IGBT technology. Some manufacturers' IGBT devices have reached the 6000V / 2000A level. In addition, commercially available IGCT devices and IGBTs produced by domestic and foreign device manufacturers have reached the 6500V / 3000A level. The rated voltage of the DC support capacitor for power modules with device voltage levels of 6000V and 6500V is 3.8~4.0kV.

[0004] Currently, there are two types of internal electrode structures for large-capacity high-voltage DC-DC supported capacitors: external series connection and internal series connection. DC-DC supported capacitors with a voltage rating of 4.0kV mainly adopt a two-internal-series structure, with an operating electric field strength typically designed to be 233~240V / μm. For DC-DC supported capacitors with voltage ratings above 4.0kV, external series connection is used. Due to limitations in film thickness, the electrode structure of 4kV DC-DC supported capacitors can use a two-internal-series structure with thicknesses of 8μm and 9μm, with operating electric field strengths of 250V / μm and 222.2V / μm, respectively. Using external series connection for high-voltage DC-DC supported capacitors above 4kV requires additional soldering points, increasing capacitor losses and inductance, thus reducing reliability.

[0005] For high-voltage DC support capacitors with voltage levels of 4.0kV and above: due to the influence of film thickness, the operating field strength of DC support capacitors with metallized film of corresponding thickness varies greatly; if the operating field strength is high, the size is smaller, but the long-term reliability is lower, and vice versa. Using external series connection requires additional soldering points, which increases the capacitor loss and inductance, increases manufacturing cost, and also reduces reliability.

[0006] In summary, the electrode structure of high-voltage DC-supported capacitors needs to focus on: multiple internal series structures; high sheet resistance; thin film thickness; and operating field strength. Solving these key technologies is the crucial point to overcome in the research and development of this type of electrode structure. Summary of the Invention

[0007] In order to overcome the shortcomings of existing DC-supported capacitor electrode structure technology, this utility model proposes a high-voltage DC-supported capacitor electrode structure.

[0008] The technical solution adopted in this utility model is as follows.

[0009] This invention provides a high-voltage DC supported capacitor electrode structure, which mainly consists of a core rod, a first high sheet resistance metallized film, a second high sheet resistance metallized film, a first gold-plated layer, a second gold-plated layer, and an outer coating. The first and second high sheet resistance metallized films are wound around the core rod. The first and second high sheet resistance metallized films are stacked together after being staggered by a certain distance. The first gold-plated layer is connected to one end of the first high sheet resistance metallized film and serves as the positive electrode, and the second gold-plated layer is connected to one end of the second high sheet resistance metallized film and serves as the negative electrode. The outer coating is inserted between the first and second high sheet resistance metallized films and wound together, forming the outermost layer.

[0010] The first high sheet resistance metallized film consists of a first base film and a first vapor-deposited layer. The first vapor-deposited layer consists of a first edge thickened region, a first active region, a second active region, a first intermediate screen strip, a third active region, a fourth active region, a fifth active region, and the first edge screen strip. The first edge thickened region is horizontally connected to the first active region, the first active region is horizontally connected to the second active region, the first intermediate screen strip is horizontally connected between the second and third active regions, the fourth active region is horizontally connected between the third and fifth active regions, and the fifth active region is horizontally connected to the first edge screen strip.

[0011] The second high sheet resistance metallized film consists of a second base film and a second vapor-deposited layer. The second vapor-deposited layer comprises a second edge thickened region, a sixth active region, a seventh active region, a second intermediate screen strip, an eighth active region, a ninth active region, a tenth active region, and a second edge screen strip. The second edge thickened region is horizontally connected to the sixth active region, the sixth active region is horizontally connected to the seventh active region, the second intermediate screen strip is horizontally connected between the seventh and eighth active regions, the ninth active region is horizontally connected between the eighth and tenth active regions, and the tenth active region is horizontally connected to the second edge screen strip.

[0012] After the first and second high sheet resistance metallized films are applied, the first and second vapor-deposited layers are further separated. The first edge thickened area, the first active area, the second active area, the first intermediate screen strip, the ninth active area, the tenth active area, and the second edge screen strip constitute the first series capacitor C1. The first intermediate screen strip, the third active area, the fourth active area, the second intermediate screen strip, the eighth active area, and the ninth active area constitute the second series capacitor C2. The fourth active area, the fifth active area, the first edge screen strip, the second edge thickened area, the sixth active area, the seventh active area, and the second intermediate screen strip constitute the third series capacitor C3. The whole structure forms a three-inner-series capacitor C.

[0013] Furthermore, the first and second gold-plated layers can also serve as the negative and positive electrodes of a DC support capacitor.

[0014] The core rod is made of polyurethane, with a diameter of 9mm, a cylindrical structure, and hexagonal through holes inside, and can withstand a high temperature of 140℃.

[0015] The first base film is a high-temperature resistant electrical polypropylene film with a maximum operating temperature of 120℃.

[0016] The second base film is a high-temperature resistant electrical polypropylene film with a maximum operating temperature of 120℃.

[0017] The outer wrapping material is polypropylene film for packaging, usually 12 to 15 layers.

[0018] The first and second gold-plated layers are made of zinc or composite materials.

[0019] The width of the first edge thickening area is 5mm, and the sheet resistance of the vapor-deposited metal layer is 2 (1~3) Ω / □. Its material is zinc-aluminum alloy.

[0020] The sheet resistance of the metal layer vapor-deposited in the first active area is 7 (5~9) Ω / □, and its material is zinc-aluminum alloy.

[0021] The sheet resistance of the metal layer vapor-deposited in the second active area is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0022] The width of the first intermediate screen is 5mm.

[0023] The sheet resistance of the metal layer vapor-deposited in the third active area is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0024] The sheet resistance of the metal layer vapor-deposited in the fourth active zone is 7 (5~9) Ω / □, and its material is zinc-aluminum alloy.

[0025] The sheet resistance of the metal layer vapor-deposited in the fifth active zone is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0026] The width of the first edge screen band is 2.5~3mm.

[0027] The second edge thickening area has a width of 5mm, and the sheet resistance of the vapor-deposited metal layer is 2 (1~3) Ω / □. Its material is zinc-aluminum alloy.

[0028] The sheet resistance of the metal layer vapor-deposited in the sixth active zone is 7 (5~9) Ω / □, and its material is zinc-aluminum alloy.

[0029] The sheet resistance of the metal layer vapor-deposited in the seventh active zone is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0030] The width of the second intermediate screen is 5mm.

[0031] The sheet resistance of the metal layer vapor-deposited in the eighth active zone is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0032] The sheet resistance of the metal layer vapor-deposited in the ninth active zone is 7 (5~9) Ω / □, and its material is zinc-aluminum alloy.

[0033] The sheet resistance of the metal layer vapor-deposited in the tenth active area is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0034] The width of the second edge screen band is 2.5~3mm.

[0035] Furthermore, the first base film and the second base film have the same thickness and material, but they can also have different thicknesses under special operating conditions.

[0036] Furthermore, the width of the first active area is 10% of the width of the first base film, the width of the second active area is 20% of the width of the first base film, the width of the third active area is 20% of the width of the first base film, the width of the fourth active area is 20% of the width of the first base film, and the width of the fifth active area is 20% of the width of the first base film. The width accuracy is ±5%.

[0037] Furthermore, the width of the sixth active region accounts for 10% of the width of the second base film, the width of the seventh active region accounts for 20% of the width of the second base film, the width of the eighth active region accounts for 20% of the width of the second base film, the width of the ninth active region accounts for 20% of the width of the second base film, and the width of the tenth active region accounts for 20% of the width of the second base film. The width accuracy is ±5%.

[0038] The beneficial effects of this utility model are: the electrode structure has the advantages of high current density, small size and reduced processing steps of the inner string structure metallized thin film, and the use of a thin three inner string structure metallized thin film can achieve a capacitor working field strength of 240V / µm, reduce the size of the capacitor and improve its self-healing ability.

[0039] This utility model has a simple structure and is easy to manufacture, and can meet the requirements for high long-term safe and reliable operation of high voltage DC support capacitors. Attached Figure Description

[0040] Figure 1 This is a schematic diagram of the present invention;

[0041] Figure 2 This is a side view of the first high sheet resistance metallized thin film;

[0042] Figure 3 This is the second high sheet resistance metallization film;

[0043] Figure 4 This is a schematic diagram of the stacking of the first high sheet resistance metallized film and the second high sheet resistance metallized film.

[0044] In the figure, 1-core rod; 2-first high sheet resistance metallization film; 3-first high sheet resistance metallization film; 4-first gold sputtering layer; 5-second gold sputtering layer; 6-outer coating film;

[0045] 21-First base film; 22-First vapor-deposited layer;

[0046] 31-Second base film; 32-Second vapor-deposited layer;

[0047] 221-First edge thickened area; 222-First active area; 223-Second active area; 224-First middle screen strip; 225-Third active area; 226-Fourth active area; 227-Fifth active area; 228-First edge screen strip;

[0048] 321 - Second edge thickened area; 322 - Sixth active area; 323 - Seventh active area; 324 - Second middle screen strip; 325 - Eighth active area; 326 - Ninth active area; 327 - Tenth active area; 328 - Second edge screen strip. Detailed Implementation

[0049] The present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0050] exist Figure 1As can be seen, the electrode structure of the high voltage DC support capacitor mainly consists of a core rod (1), a first high sheet resistance metallized film (2), a second high sheet resistance metallized film (3), a first gold sputtering layer (4), a second gold sputtering layer (5), and an outer film (6). The first high sheet resistance metallized film (2) and the second high sheet resistance metallized film (3) are wound around the core rod (1). The first high sheet resistance metallized film (2) and the second high sheet resistance metallized film (3) are stacked together after being staggered by a certain distance. The first gold sputtering layer (4) is connected to one end of the first high sheet resistance metallized film (1) and serves as the positive electrode. The second gold sputtering layer (5) is connected to one end of the second high sheet resistance metallized film (3) and serves as the negative electrode. The outer film (6) is inserted between the first high sheet resistance metallized film (2) and the second high sheet resistance metallized film (3) and wound together and is on the outermost side.

[0051] Depend on Figure 2 As can be seen, the first high sheet resistance metallized film (2) is composed of a first base film (21) and a first vapor deposition layer (22). The first vapor deposition layer (22) is composed of a first edge thickening region (221), a first active region (222), a second active region (223), a first intermediate screen strip (224), a third active region (225), a fourth active region (226), a fifth active region (227), and a first edge screen strip (228). The first edge thickening region (221) is horizontally connected to the first active region (222), the first active region (222) is horizontally connected to the second active region (223), the first intermediate screen strip (224) is horizontally connected between the second active region (223) and the third active region (225), the fourth active region (226) is horizontally connected between the third active region (225) and the fifth active region (227), and the fifth active region (227) is horizontally connected to the first edge screen strip (228).

[0052] Depend on Figure 3 As can be seen, the second high sheet resistance metallized film (3) is composed of a second base film (31) and a second vapor deposition layer (32). The second vapor deposition layer (32) is composed of a second edge thickening region (321), a sixth active region (322), a seventh active region (323), a second intermediate screen strip (324), an eighth active region (325), a ninth active region (326), a tenth active region (327), and a second edge screen strip (328). The second edge thickening region (321) is horizontally connected to the sixth active region (322), the sixth active region (322) is horizontally connected to the seventh active region (323), the second intermediate screen strip (324) is horizontally connected between the seventh active region (323) and the eighth active region (325), the ninth active region (326) is horizontally connected between the eighth active region (325) and the tenth active region (327), and the tenth active region (327) is horizontally connected to the second edge screen strip (328).

[0053] Depend on Figure 4 It can be seen that after the first high sheet resistance metallization film (2) and the second high sheet resistance metallization film (3), the first vapor deposition layer (22) and the second vapor deposition layer (32) are divided twice. The first edge thickening area (221), the first active area (222), the second active area (223), the first intermediate screen strip (224), the ninth active area (326), the tenth active area (327), and the second edge screen strip (328) constitute the first string capacitor C1. The first intermediate screen strip (224), the third active area (225), the fourth active area (226), the second intermediate screen strip (324), the eighth active area (325), and the ninth active area (326) constitute the second series capacitor C2. The fourth active area (226), the fifth active area (227), the first edge screen strip (228), the second edge thickened area (321), the sixth active area (322), the seventh active area (323), and the second intermediate screen strip (324) constitute the third series capacitor C3. The whole structure constitutes a three-inner-series capacitor C.

[0054] Furthermore, the first gold-plated layer (4) and the second gold-plated layer (5) can also serve as the negative and positive poles of the DC support capacitor.

[0055] The core material (1) is polyurethane material with a diameter of 9mm, cylindrical structure, and hexagonal through holes inside, which can withstand high temperature of 140℃.

[0056] The first base film (21) is a high-temperature resistant electrical polypropylene film with a maximum working temperature of 120°C.

[0057] The second base film (31) is a high-temperature resistant electrical polypropylene film with a maximum working temperature of 120°C.

[0058] The outer wrapping film (6) is made of polypropylene film for packaging, usually 12 to 15 layers.

[0059] The first gold-plated layer (4) and the second gold-plated layer (5) are made of zinc or composite materials.

[0060] The width of the first edge thickened area (221) is 5mm, and the sheet resistance of the vapor-deposited metal layer is 2 (1~3) Ω / □. Its material is zinc-aluminum alloy.

[0061] The sheet resistance of the metal layer vapor-deposited in the first active area (222) is 7 (5~9) Ω / □, and its material is zinc-aluminum alloy.

[0062] The sheet resistance of the metal layer vapor-deposited in the second active area (223) is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0063] The width of the first intermediate screen strip (224) is 5mm.

[0064] The sheet resistance of the metal layer vapor-deposited in the third active area (225) is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0065] The sheet resistance of the metal layer deposited in the fourth active area (226) is 7 (5~9) Ω / □, and its material is zinc-aluminum alloy.

[0066] The sheet resistance of the metal layer vapor-deposited in the fifth active area (227) is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0067] The width of the first edge screen strip (228) is 2.5~3mm.

[0068] The second edge thickening area (321) has a width of 5 mm, and the sheet resistance of the vapor-deposited metal layer is 2 (1~3) Ω / □. Its material is zinc-aluminum alloy.

[0069] The sheet resistance of the metal layer vapor-deposited in the sixth active area (322) is 7 (5~9) Ω / □, and its material is zinc-aluminum alloy.

[0070] The sheet resistance of the metal layer vapor-deposited in the seventh active area (323) is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0071] The width of the second intermediate screen strip (324) is 5mm.

[0072] The sheet resistance of the metal layer vapor-deposited in the eighth active area (325) is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0073] The sheet resistance of the metal layer vapor-deposited in the ninth active area (326) is 7 (5~9) Ω / □, and its material is zinc-aluminum alloy.

[0074] The sheet resistance of the metal layer vapor-deposited in the tenth active area (327) is 50 (40~60) Ω / □, and its material is zinc-aluminum alloy.

[0075] The width of the second edge screen strip (328) is 2.5~3mm.

[0076] Furthermore, the first base film (21) and the second base film (31) have the same thickness and material, but they can also have different thicknesses under special operating conditions.

[0077] Furthermore, the width of the first active region (222) is 10% of the width of the first base film (21), the width of the second active region (223) is 20% of the width of the first base film (21), the width of the third active region (225) is 20% of the width of the first base film (21), the width of the fourth active region (226) is 20% of the width of the first base film (21), and the width of the fifth active region (227) is 20% of the width of the first base film (21).

[0078] Furthermore, the width of the sixth active region (322) is 10% of the width of the second base film, the width of the seventh active region (323) is 20% of the width of the second base film, the width of the eighth active region (325) is 20% of the width of the second base film, the width of the ninth active region (326) is 20% of the width of the second base film, and the width of the tenth active region (327) is 20% of the width of the second base film.

[0079] The above description is merely a preferred embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in this utility model should be included within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.

Claims

1. A high-voltage DC supported capacitor electrode structure, characterized in that: The high-voltage DC supported capacitor electrode structure includes a core rod, a first high sheet resistance metallized film, a second high sheet resistance metallized film, a first gold sputtering layer, a second gold sputtering layer, and an outer film. The first and second high sheet resistance metallized films are wound around the core rod. The first and second high sheet resistance metallized films are stacked together after being staggered by a certain distance. The first gold sputtering layer is connected to one end of the first high sheet resistance metallized film and serves as a positive electrode. The second gold sputtering layer is connected to one end of the second high sheet resistance metallized film and serves as a negative electrode. The outer film is inserted between the first and second high sheet resistance metallized films and wound together, and is on the outermost side. The first high sheet resistance metallized film includes a first base film and a first vapor deposition layer. The first vapor deposition layer includes a first edge thickening region, a first active region, a second active region, a first intermediate screen strip, a third active region, a fourth active region, a fifth active region, and a first edge screen strip. The first edge thickening region is horizontally connected to the first active region, the first active region is horizontally connected to the second active region, the first intermediate screen strip is horizontally connected between the second and third active regions, the fourth active region is horizontally connected between the third and fifth active regions, and the fifth active region is horizontally connected to the first edge screen strip. The second high sheet resistance metallized film includes a second base film and a second vapor deposition layer. The second vapor deposition layer includes a second edge thickening region, a sixth active region, a seventh active region, a second intermediate screen strip, an eighth active region, a ninth active region, a tenth active region, and a second edge screen strip. The second edge thickening region is horizontally connected to the sixth active region, the sixth active region is horizontally connected to the seventh active region, the second intermediate screen strip is horizontally connected between the seventh and eighth active regions, the ninth active region is horizontally connected between the eighth and tenth active regions, and the tenth active region is horizontally connected to the second edge screen strip. After the first high sheet resistance metallized film and the second high sheet resistance metallized film are formed, the first vapor deposition layer and the second vapor deposition layer are separated again and the whole is formed into a three-string capacitor. The first edge thickening area, the first active area, the second active area, the first intermediate screen strip, the ninth active area, the tenth active area, and the second edge screen strip constitute the first string capacitor. The first intermediate screen strip, the third active area, the fourth active area, the second intermediate screen strip, the eighth active area, and the ninth active area constitute the second string capacitor. The fourth active area, the fifth active area, the first edge screen strip, the second edge thickening area, the sixth active area, the seventh active area, and the second intermediate screen strip constitute the third string capacitor.

2. The high-voltage DC supported capacitor electrode structure according to claim 1, characterized in that: The width of the first active area is 10% of the width of the first base film, the width of the second active area is 20% of the width of the first base film, the width of the third active area is 20% of the width of the first base film, the width of the fourth active area is 20% of the width of the first base film, and the width of the fifth active area is 20% of the width of the first base film.

3. The high-voltage DC supported capacitor electrode structure according to claim 1, characterized in that: The width of the sixth active area is 10% of the width of the second base film, the width of the seventh active area is 20% of the width of the second base film, the width of the eighth active area is 20% of the width of the second base film, the width of the ninth active area is 20% of the width of the second base film, and the width of the tenth active area is 20% of the width of the second base film.

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