An integrated circuit facilitating embedding of electromagnetic shielding microstructures

Abstract

The utility model discloses a kind of integrated circuits of embedded electromagnetic shielding microstructure, it is related to integrated circuit electromagnetic shielding technical field. Including connecting plate, the top surface of the connecting plate is fixedly connected with multiple IC, the top surface of the connecting plate is fixedly connected with shielding shell, through the three-dimensional shielding component of being set, shielding layer of graphene material forms layer isolation with multiple IC, so that the three-dimensional conductive network of shielding layer formed by plasma-enhanced chemical vapor deposition growth vertical arrangement in the interlayer dielectric of IC, three-dimensional conductive network generates strong reflection to high-frequency electromagnetic wave through surface plasmon resonance effect, to reach better shielding suppression effect, solve the shortcoming of traditional plane shielding capacity deficiency, through the heat dissipation component of being set, so that carbon nanotube absorbs the heat of shielding layer and quickly conducts to fin, to avoid heat accumulation, maintain IC temperature stable, solve the problem of traditional shielding structure poor heat dissipation performance.

Description

Technical Field

[0001] This utility model relates to the field of electromagnetic shielding technology for integrated circuits, specifically to an integrated circuit that is easy to embed with an electromagnetic shielding microstructure. Background Technology

[0002] As integrated circuits (ICs) develop towards higher frequencies and higher integration, electromagnetic interference (EMI) problems within chips are becoming increasingly prominent. Crosstalk between adjacent circuit modules and interference from radio frequency noise on sensitive components seriously affect circuit performance and stability. Traditional electromagnetic shielding technologies mostly use overall packaged shielding covers, but for chip-level internal microstructure shielding, due to poor process compatibility and space limitations, it is difficult to implement effectively.

[0003] In existing technologies, traditional metal shielding layers require complex deposition and photolithography processes, which are incompatible with mainstream IC manufacturing processes such as CMOS, increasing manufacturing costs and complexity. At the same time, planar shielding structures have limited shielding effects against electromagnetic interference in three-dimensional space, especially insufficient suppression of crosstalk in the vertical direction. Furthermore, although traditional shielding materials are conductive, they have poor thermal conductivity, which can easily lead to heat accumulation and affect chip performance. Therefore, there is an urgent need for an integrated circuit that can be easily embedded with electromagnetic shielding microstructures to solve the above problems. Utility Model Content

[0004] The purpose of this invention is to provide an integrated circuit that is easy to embed into an electromagnetic shielding microstructure, so as to solve the problems of limited shielding effectiveness and poor heat dissipation performance of traditional metal shielding mentioned in the background art.

[0005] To achieve the above objectives, this utility model provides the following technical solution: an integrated circuit that facilitates the embedding of electromagnetic shielding microstructures, comprising a connecting plate, wherein multiple ICs are fixedly connected to the top surface of the connecting plate, and a shielding shell is fixedly connected to the top surface of the connecting plate; the integrated circuit further comprises:

[0006] A three-dimensional shielding assembly is disposed on the top surface of the connecting plate and is used to shield the multiple ICs inside the connecting plate from each other.

[0007] A heat dissipation assembly is disposed on both sides of the connecting plate and is used to dissipate heat from multiple ICs inside the connecting plate.

[0008] Preferably, the three-dimensional shielding component includes a shielding layer, which is fixedly connected to the top surface of the connecting plate. The plurality of shielding layers are arranged in a vertical array, and the top surface of the shielding layer is fixedly connected to the inner wall of the shielding shell.

[0009] Preferably, the heat dissipation assembly includes two heat sinks, which are respectively fixedly connected to the two sides of the shielding shell. Multiple carbon nanotubes are fixedly connected inside the shielding layer, and each of the multiple carbon nanotubes is fixedly connected to the side wall of the heat sink.

[0010] Preferably, the top surface of the shielding layer has multiple embedding grooves, and the inner wall of the embedding grooves is fixedly connected with magnetic alloy nanowires.

[0011] Preferably, an ultra-thin dielectric layer is fixedly connected to both sides of the shielding layer, and the size of the ultra-thin dielectric layer matches the size of the shielding layer.

[0012] Preferably, the shielding layer is made of graphene, and the dimensions of the multiple shielding layers are matched.

[0013] Compared with the prior art, the beneficial effects of this utility model are:

[0014] By using a three-dimensional shielding component, the graphene shielding layer forms interlayer isolation with multiple ICs. This allows the vertically aligned shielding layers grown in the interlayer medium of the ICs through plasma-enhanced chemical vapor deposition to form a three-dimensional conductive network. The three-dimensional conductive network generates strong reflection of high-frequency electromagnetic waves through surface plasmon resonance, thereby achieving a better shielding and suppression effect and overcoming the shortcomings of traditional planar shielding. The heat dissipation component allows carbon nanotubes to quickly conduct the heat absorbed by the shielding layer to the heat sink, thereby preventing heat accumulation, maintaining the IC temperature stability, and solving the heat dissipation problem of traditional shielding structures. Attached Figure Description

[0015] Figure 1 This is a three-dimensional structural diagram of the present invention;

[0016] Figure 2 This is a schematic diagram of the heat dissipation component structure of this utility model;

[0017] Figure 3 This is a schematic diagram of the three-dimensional shielding component structure of this utility model;

[0018] Figure 4 for Figure 3 Enlarged structural diagram at point A in the middle.

[0019] In the diagram: 1. Connecting plate; 2. IC; 3. Shielding shell; 4. Three-dimensional shielding assembly; 401. Shielding layer; 402. Embedded groove; 403. Magnetic alloy nanowire; 404. Ultra-thin dielectric layer; 5. Heat dissipation assembly; 501. Heat sink; 502. Carbon nanotube. Detailed Implementation

[0020] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0021] Please see Figure 1 - Figure 4 This utility model provides an integrated circuit that is easy to embed with an electromagnetic shielding microstructure. It includes a connecting plate 1, a plurality of ICs 2 are fixedly connected to the top surface of the connecting plate 1, a shielding shell 3 is fixedly connected to the top surface of the connecting plate 1, the integrated circuit also includes a three-dimensional shielding component 4, which is disposed on the top surface of the connecting plate 1 and is used to shield the plurality of ICs 2 inside the connecting plate 1 from each other, and a heat dissipation component 5, which is disposed on both sides of the connecting plate 1 and is used to dissipate heat from the plurality of ICs 2 inside the connecting plate 1. Through the three-dimensional shielding component 4, the three-dimensional network generates strong reflection of high-frequency electromagnetic waves through surface plasmon resonance effect, thereby achieving a good shielding effect against electromagnetic interference in three-dimensional space. Through the heat dissipation component 5, heat conversion inside the ICs is facilitated.

[0022] Furthermore, the three-dimensional shielding component 4 includes a shielding layer 401, which is fixedly connected to the top surface of the connecting plate 1. Multiple shielding layers 401 are arranged in a vertical array. The top surface of the shielding layer 401 is fixedly connected to the inner wall of the shielding shell 3. Ultra-thin dielectric layers 404 are fixedly connected to both sides of the shielding layer 401. The size of the ultra-thin dielectric layer 404 matches the size of the shielding layer 401. Through the three-dimensional shielding component 4, the shielding layer 401 forms interlayer isolation with multiple IC2s, so that the vertically arranged shielding layers 401 grown in the interlayer medium of IC2 through plasma-enhanced chemical vapor deposition form a three-dimensional conductive network. The three-dimensional conductive network generates strong reflection of high-frequency electromagnetic waves through surface plasma resonance effect, thereby achieving a better shielding and suppression effect and solving the shortcomings of insufficient traditional planar shielding capability. The ultra-thin dielectric layer 404 makes it easier to prevent the shielding layer 401 from short-circuiting with adjacent circuits, thus improving safety performance.

[0023] It should be noted that the shielding layer 401 is made of graphene. Multiple shielding layers 401 are matched in size. Through the graphene shielding layer 401, when the local electromagnetic interference intensity increases, the carrier concentration distribution in the graphene changes, dynamically adjusting the shielding effectiveness and achieving adaptive shielding.

[0024] Furthermore, the heat dissipation component 5 includes two heat sinks 501, which are fixedly connected to both sides of the shielding shell 3. Multiple carbon nanotubes 502 are fixedly connected inside the shielding layer 401, and the multiple carbon nanotubes 502 are fixedly connected to the side wall of the heat sink 501. Through the heat dissipation component 5, the carbon nanotubes 502 can quickly conduct the heat absorbed by the shielding layer 401 to the heat sink 501, thereby avoiding heat accumulation, maintaining the temperature stability of IC2, and solving the heat dissipation problem of traditional shielding structures.

[0025] Furthermore, the top surface of the shielding layer 401 is provided with multiple embedded grooves 402, and the inner wall of the embedded grooves 402 is fixedly connected with magnetic alloy nanowires 403. Through the multiple magnetic alloy nanowires 403, the magnetic alloy nanowires 403 convert electromagnetic wave energy into heat energy dissipation through hysteresis loss, achieving a better absorption effect on low-frequency magnetic field interference. At the same time, during use, a heterojunction is formed at the interface between the shielding layer 401 and the magnetic alloy nanowires 403, thereby enhancing the interface polarization effect and expanding the shielding bandwidth. By combining the array of graphene shielding layers 401 with the magnetic alloy nanowires 403, a three-dimensional composite shielding microstructure is constructed, breaking through the limitations of traditional two-dimensional planar shielding and realizing omnidirectional, broadband electromagnetic shielding.

[0026] Working principle: During use, through the set three-dimensional shielding component 4, the graphene shielding layer 401 forms interlayer isolation with multiple IC2s, so that the vertically arranged shielding layer 401 grown in the interlayer medium of IC2 through plasma-enhanced chemical vapor deposition forms a three-dimensional conductive network. The three-dimensional conductive network generates strong reflection of high-frequency electromagnetic waves through surface plasma resonance effect, thereby achieving a better shielding and suppression effect and solving the shortcomings of insufficient traditional planar shielding capabilities.

[0027] Meanwhile, the heat dissipation component 5 enables the carbon nanotubes 502 to quickly conduct the heat absorbed by the shielding layer 401 to the heat sink 501, thereby preventing heat accumulation, maintaining the stable temperature of IC2, and solving the heat dissipation problem of traditional shielding structures.

[0028] Secondly, by setting multiple magnetic alloy nanowires 403, the magnetic alloy nanowires 403 convert electromagnetic wave energy into heat energy dissipation through hysteresis loss, achieving a better absorption effect on low-frequency magnetic field interference. At the same time, during use, a heterojunction is formed at the interface between the shielding layer 401 and the magnetic alloy nanowires 403, thereby enhancing the interface polarization effect and expanding the shielding bandwidth.

[0029] Furthermore, by combining the graphene shielding layer 401 array with the magnetic alloy nanowires 403, a three-dimensional composite shielding microstructure is constructed, breaking through the limitations of traditional two-dimensional planar shielding and achieving omnidirectional, wideband electromagnetic shielding. At the same time, it integrates electromagnetic shielding, adaptive adjustment, and efficient heat dissipation, solving the problems of single function and poor heat dissipation performance in existing technologies. Using a low-temperature compatible process, the shielding structure is directly integrated in the interlayer dielectric of IC2 without additional packaging steps, providing an excellent solution for chip-level electromagnetic compatibility.

[0030] It will be apparent to those skilled in the art that this invention is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this invention. Therefore, the embodiments should be considered illustrative and non-limiting in all respects, and the scope of this invention is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this invention. No reference numerals in the claims should be construed as limiting the scope of the claims.

Claims

1. An integrated circuit facilitating embedding of an electromagnetic shielding microstructure, comprising a connecting plate (1), a plurality of ICs (2) are fixedly connected to the top surface of the connecting plate (1), a shielding shell (3) is fixedly connected to the top surface of the connecting plate (1), characterized in that, The integrated circuit also includes: A three-dimensional shielding component (4) is disposed on the top surface of the connecting plate (1) and is used to shield the multiple ICs (2) inside the connecting plate (1) from each other. Heat dissipation assembly (5) is disposed on both sides of the connecting plate (1) and is used to dissipate heat from multiple ICs (2) inside the connecting plate (1).

2. An integrated circuit that is easy to embed into an electromagnetic shielding microstructure according to claim 1, characterized in that: The three-dimensional shielding component (4) includes a shielding layer (401), which is fixedly connected to the top surface of the connecting plate (1). The multiple shielding layers (401) are arranged in a vertical array, and the top surface of the shielding layer (401) is fixedly connected to the inner wall of the shielding shell (3).

3. An integrated circuit that facilitates the embedding of electromagnetic shielding microstructures according to claim 2, characterized in that: The heat dissipation assembly (5) includes two heat sinks (501), which are fixedly connected to the two sides of the shielding shell (3). Multiple carbon nanotubes (502) are fixedly connected inside the shielding layer (401), and the multiple carbon nanotubes (502) are fixedly connected to the side wall of the heat sink (501).

4. An integrated circuit that is easy to embed into an electromagnetic shielding microstructure according to claim 2, characterized in that: The top surface of the shielding layer (401) is provided with a plurality of embedding grooves (402), and magnetic alloy nanowires (403) are fixedly connected to the inner wall of the embedding grooves (402).

5. An integrated circuit that is easy to embed into an electromagnetic shielding microstructure according to claim 2, characterized in that: Both sides of the shielding layer (401) are fixedly connected to an ultra-thin dielectric layer (404), the size of which matches the size of the shielding layer (401).

6. An integrated circuit that facilitates the embedding of electromagnetic shielding microstructures according to claim 2, characterized in that: The shielding layer (401) is made of graphene, and the dimensions of the multiple shielding layers (401) are matched.

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