High-temperature resistant reaction vessel for silicon powder purification

Abstract

This utility model provides a high-temperature reaction vessel for silicon powder purification, including a reaction vessel body, several rectangular isolation silicon plates, and several high-temperature resistant fasteners. The fasteners are welded and fixed at intervals along the inner wall of the reaction vessel body and extend along the height direction of the reaction vessel body. A fixed channel is formed between two adjacent fasteners. The rectangular isolation silicon plates have slots that match the fixed channels on their opposite sides along their length direction. The rectangular isolation silicon plates are sequentially inserted into each fixed channel through the slots, and the rectangular isolation silicon plates inserted into two adjacent fixed channels and the rectangular isolation silicon plates inserted into each fixed channel are tightly closed to each other, forming an isolation layer on the inner wall of the reaction vessel body to seal the fasteners and the inner wall of the reaction vessel body, so that the silicon powder entering the reaction vessel body does not come into contact with the fasteners and the inner wall of the reaction vessel body, thereby reducing the pollution of silicon powder caused by the precipitation of metal ions in the reaction vessel body.

Description

Technical Field

[0001] This utility model relates to the field of reaction vessel technology, specifically to a high-temperature resistant reaction vessel for silicon powder purification. Background Technology

[0002] Silicon powder is a key basic material in the manufacturing of semiconductors, photovoltaics, and electronic components, and its purity directly affects the performance and reliability of downstream products. The production and preparation of silicon powder requires high-temperature purification in a reaction vessel.

[0003] Traditional reaction vessels are generally made of metal materials (such as stainless steel and carbon steel). During the high-temperature purification process of silicon powder in the reaction vessel, the core temperature of the silicon powder can reach about 600°. When the inner wall of the reaction vessel comes into contact with the high-temperature silicon powder, metal ions (such as Fe, Ni, Cr, etc.) in the inner wall of the reaction vessel will slowly precipitate out and adhere to the surface of the silicon powder. These metal ions will significantly reduce the purity of the silicon powder, thereby affecting its electrical performance in semiconductor or photovoltaic applications.

[0004] Currently, in order to reduce metal ion precipitation pollution, the industry usually uses polishing or spraying silicon material coating on the inner wall of the reaction vessel to isolate it and alleviate the above problems. However, these methods still have limitations: the polishing process cannot completely eliminate metal activity, and the silicon material coating is easy to wear off during use, resulting in a short service life and poor stability of the reaction vessel. Therefore, silicon powder will still become a weak point in pollution control during the high-temperature reaction process in the reaction vessel. Utility Model Content

[0005] In view of this, it is necessary to provide a high-temperature resistant reaction vessel for silicon powder purification to solve the technical problem that silicon powder is easily contaminated by metal ions during the high-temperature reaction process in the reaction vessel, which exists in the prior art.

[0006] The technical solution adopted by this utility model to solve its technical problem is:

[0007] A high-temperature resistant reaction vessel for silicon powder purification includes a reaction vessel body, several rectangular isolation silicon plates, and several high-temperature resistant fasteners welded and fixed to the inner wall of the reaction vessel body. The fasteners are fixed at intervals along the circumference of the inner wall of the reaction vessel body and extend along the height direction of the reaction vessel body. A fixed channel is formed between two adjacent fasteners. The rectangular isolation silicon plates have slots that match the fixed channels on their opposite sides along their length direction. The rectangular isolation silicon plates are sequentially inserted into each fixed channel through the slots, and the rectangular isolation silicon plates inserted into two adjacent fixed channels and the rectangular isolation silicon plates inserted into each fixed channel are tightly closed to each other, forming an isolation layer on the inner wall of the reaction vessel body to seal the fasteners and the inner wall of the reaction vessel body, so that the silicon powder entering the reaction vessel body does not come into contact with the fasteners and the inner wall of the reaction vessel body.

[0008] Preferably, each of the fixing components includes a long strip-shaped base plate, a stiffening plate, and a retaining plate. The base plate extends along the height direction of the reaction vessel body and is fixedly installed on the inner wall of the reaction vessel body. The stiffening plate extends along the height direction of the reaction vessel body and is fixedly installed at the middle of the upper part of the base plate. The retaining plate extends along the height direction of the reaction vessel body and is fixedly installed at the upper part of the stiffening plate, and is directly opposite and parallel to the base plate. The base plate, stiffening plate, and retaining plate are combined to form a long strip-shaped I-beam frame. The aforementioned fixing channel is formed between the side edges of the retaining plates of two adjacent fixing components. The slots on both sides of the rectangular isolation silicon plate are correspondingly engaged on the side edges of the retaining plates of two adjacent fixing components, and the two adjacent edges of the rectangular isolation silicon plates in the two adjacent fixing channels facing the inner side of the reaction vessel body are tightly closed to each other.

[0009] Preferably, a feed pipe communicating with the interior is provided on the outer wall of the reaction vessel body. A first tubular isolation silicon plate is sleeved in the feed pipe. The first tubular isolation silicon plate is inserted into the reaction vessel body along the feed pipe. The first tubular isolation silicon plate forms an isolation layer on the inner wall of the feed pipe. The rectangular isolation silicon plate on the inner wall of the reaction vessel body and the outer wall of the end of the first tubular isolation silicon plate inserted into the reaction vessel body are tightly closed to each other, so that the silicon powder does not come into contact with the inner wall of the feed pipe when it is transported from the feed pipe into the reaction vessel body.

[0010] Preferably, a plate-shaped isolation silicon plate is laid parallel to the bottom of the reaction vessel body, and the lower end of the rectangular isolation silicon plate on the inner wall of the reaction vessel body is closely closed with the plate-shaped isolation silicon plate at the bottom of the reaction vessel body, so that the silicon powder entering the reaction vessel body does not come into contact with the bottom of the reaction vessel body.

[0011] Preferably, a discharge pipe communicating with the inner bottom of the tank is provided at the outer bottom of the tank bottom. A second tubular isolation silicon plate is sleeved in the discharge pipe. The second tubular isolation silicon plate is inserted into the inner bottom of the tank bottom along the discharge pipe. The second tubular isolation silicon plate forms an isolation layer on the inner wall of the discharge pipe. The plate-shaped isolation silicon plate laid at the inner bottom of the tank bottom and the outer wall of the end of the second tubular isolation silicon plate inserted into the inner bottom of the tank bottom are tightly closed to each other, so that the silicon powder in the reaction tank body does not come into contact with the inner wall of the discharge pipe when it is discharged from the discharge pipe.

[0012] Preferably, the bottom of the tank is detachably connected to the side wall of the reaction vessel body.

[0013] Preferably, the rectangular isolation silicon plate, the plate-shaped isolation silicon plate, the first tubular isolation silicon plate, and the second tubular isolation silicon plate are all made by cutting monocrystalline silicon or polycrystalline silicon.

[0014] Preferably, the rectangular isolation silicon plate, the plate-shaped isolation silicon plate, the first tubular isolation silicon plate, and the second tubular isolation silicon plate all have chamfers on their four periphery.

[0015] As can be seen from the above technical solution, the high-temperature resistant reaction vessel for silicon powder purification provided in this application establishes a fixed channel on the inner wall of the reaction vessel body by welding several high-temperature resistant fasteners at intervals. The rectangular isolation silicon plates have slots on both sides that match the fixed channel. Several rectangular isolation silicon plates are sequentially inserted into each fixed channel through the slots, with the rectangular isolation silicon plates tightly closed to each other, forming an isolation layer on the inner wall of the reaction vessel body. This seals the fasteners and the inner wall of the reaction vessel body. Its beneficial effect is that the fasteners, within the reaction vessel body... A fixed channel is established on the inner wall, and a rectangular isolation silicon plate is embedded and fixed to the inner wall of the reaction vessel body through the fixed channel to form an isolation layer. The fastener has good high temperature resistance and is fixed by welding, which is not easy to fall off or loosen, and can provide stable support for the rectangular isolation silicon plate. The rectangular isolation silicon plate has the same raw materials, chemical composition and physical properties as silicon powder. In the reaction vessel body, it can effectively isolate silicon powder, reduce the contamination of silicon powder by metal ion precipitation in the reaction vessel body, and the rectangular isolation silicon plate has high wear resistance and stability, which can improve the service life of the reaction vessel. Attached Figure Description

[0016] Figure 1 This is a three-dimensional structural diagram of the utility model.

[0017] Figure 2 This is a top view of the structure of the utility model.

[0018] Figure 3 for Figure 1 Schematic diagram of the cross-sectional structure at point AA along the middle.

[0019] Figure 4 for Figure 1 A magnified view of part A in the diagram.

[0020] Figure 5 A three-dimensional structural diagram showing the fixture installed inside the reaction vessel body.

[0021] Figure 6 A top view of the structure in which the fixing element is installed inside the reaction vessel body.

[0022] Figure 7 This is a schematic diagram showing the exploded structure of the reaction vessel body and bottom.

[0023] Figure 8 This is a schematic diagram of the rectangular isolation silicon plate structure.

[0024] Figure 9 This is a schematic diagram of the assembly structure of the rectangular isolation silicon plate and the fixing component.

[0025] Figure 10 This is a schematic diagram of the rectangular isolation silicon plate and the fastener assembly from another angle.

[0026] In the figure: reaction vessel body 10, feed pipe 11, discharge pipe 12, tank bottom 13, rectangular isolation silicon plate 20, slot 21, chamfer 22, fastener 30, fixing channel 31, bottom plate 32, rib plate 33, clamping plate 34, first tubular isolation silicon plate 40, plate-shaped isolation silicon plate 50, second tubular isolation silicon plate 60. Detailed Implementation

[0027] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Please refer to Figures 1 to 6This utility model provides a high-temperature resistant reaction vessel for silicon powder purification, including a reaction vessel body 10, several rectangular isolation silicon plates 20, and several high-temperature resistant fasteners 30 welded and fixed to the inner wall of the reaction vessel body 10. The reaction vessel body 10 is a cylindrical tank made of metal material (such as stainless steel or carbon steel). The upper port of the reaction vessel body 10 is used to connect silicon powder production equipment or install a sealing cover. The rectangular isolation silicon plates 20 are silicon plates of predetermined size cut from monocrystalline or polycrystalline silicon. The several fasteners 30 are welded and evenly distributed and spaced along the circumference of the inner wall of the reaction vessel body 10, and extend along the height direction of the reaction vessel body 10. A fixing channel 31 is formed between two adjacent fasteners 30, and the width of the fixing channel 31 is adapted to the width of the rectangular isolation silicon plates 20. The rectangular isolation silicon plates 20 have slots 21 on their opposite sides along their length that match the fixed channels 31. Several rectangular isolation silicon plates 20 are sequentially inserted into each fixed channel 31 through the slots 21. The fixed channels 31 hold each rectangular isolation silicon plate 20 in place, making it tightly adhere to the inner wall of the reaction vessel body 10. The rectangular isolation silicon plates 20 inserted into the same fixed channel 31 are connected end to end and tightly closed to each other. Furthermore, the two adjacent edges of the rectangular isolation silicon plates 20 inserted into two adjacent fixed channels 31 facing the inside of the reaction vessel body 10 are tightly closed to each other, forming an isolation layer on the inner wall of the reaction vessel body 10 to seal the fixing member 30 and the inner wall of the reaction vessel body 10, so that the silicon powder entering the reaction vessel body 10 does not come into contact with the fixing member 30 and the inner wall of the reaction vessel body 10.

[0029] Please refer to Figures 6 to 10Specifically, the fixing member 30 is made of stainless steel or carbon steel. Each fixing member 30 includes a base plate 32, a stiffening rib 33, and a clamping plate 34 of equal length. The base plate 32 is welded and fixed to the inner wall of the reaction vessel body 10 along the height direction. The stiffening rib 33 is welded and fixed to the middle of the upper end of the base plate 32 along the height direction of the reaction vessel body 10. The clamping plate 34 is welded and fixed to the upper end of the stiffening rib 33, and is directly opposite and parallel to the base plate 32. The base plate 32, stiffening rib 33, and clamping plate 34 are welded together to form a long strip-shaped I-beam frame. Several fixing members 30 are evenly distributed and fixed at intervals along the circumference of the inner wall of the reaction vessel body 10, so that the fixing channel 31 is formed between the side edges of the clamping plates 34 of two adjacent fixing members 30. The slots 21 on both sides of the rectangular isolation silicon plate 20 match the clamping plates 34 and stiffening ribs 33 of the fixing members 30. The slots 21 on the rectangular isolation silicon plates 20 can be combined to form a T-shaped groove that accommodates the card plate 34 and the rib plate 33. After several rectangular isolation silicon plates 20 are inserted into each fixed channel 31 in sequence, the two adjacent edges of the rectangular isolation silicon plates 20 in two adjacent fixed channels 31 facing the inside of the reaction vessel body 10 are tightly closed to each other, forming a wrap-around shield for the card plate 34. Furthermore, the rectangular isolation silicon plates 20 inserted in the same fixed channel 31 are connected end to end and tightly closed to each other. The fixed channel 31 is established on the inner wall of the reaction vessel body 10 by the fixing member 30. The rectangular isolation silicon plates 20 are fixed to the inner wall of the reaction vessel body 10 by the insertion and locking method, so that they form an isolation layer on the inner wall of the reaction vessel body 10. This prevents the silicon powder entering the reaction vessel body 10 from contacting the fixing member 30 and the inner wall of the reaction vessel body 10. In this way, the contamination of silicon powder caused by the precipitation of metal ions in the fixing member 30 and the inner wall of the reaction vessel body 10 can be reduced.

[0030] Please continue reading. Figures 1 to 5Furthermore, a feed pipe 11 communicating with the interior is provided on the outer wall of the reaction vessel body 10. The feed pipe 11 is used to transport silicon powder into the reaction vessel body 10. In order to improve the isolation effect and reduce the contamination of silicon powder by metal ion precipitation in the feed pipe 11, a first tubular isolation silicon plate 40 is sleeved in the feed pipe 11. The first tubular isolation silicon plate 40 is also made of a tubular structure cut from monocrystalline silicon or polycrystalline silicon. The outer diameter of the first tubular isolation silicon plate 40 matches the inner diameter of the feed pipe 11. A rectangular isolation silicon plate 20 inserted into the inner wall of the reaction vessel body 10 has openings that correspond to the first tubular isolation silicon plate. With a matching through hole or arc-shaped opening on the outer diameter of the plate 40, after the first tubular isolation silicon plate 40 is inserted into the reaction vessel body 10 along the feed pipe 11, the rectangular isolation silicon plate 20 and the outer side wall of the end of the first tubular isolation silicon plate 40 inserted into the reaction vessel body 10 are tightly closed to each other. The first tubular isolation silicon plate 40 forms an isolation layer on the inner wall of the feed pipe 11, so that when the silicon powder is fed into the reaction vessel body 10 from the first tubular isolation silicon plate 40, the silicon powder does not come into contact with the inner wall of the feed pipe 11, which can reduce the contamination of silicon powder by the precipitation of metal ions in the feed pipe 11, and further ensure the purity of silicon powder in the high-temperature reaction process.

[0031] Please refer to Figure 2 , Figure 3 and Figure 6 Furthermore, a plate-shaped isolation silicon plate 50 is laid parallel to the bottom of the tank bottom 13 of the reaction vessel body 10. The plate-shaped isolation silicon plate 50 is also made of monocrystalline silicon or polycrystalline silicon and is a plate-shaped structure that matches the bottom of the tank bottom 13. The lower end of the rectangular isolation silicon plate 20 on the inner wall of the reaction vessel body 10 is close to the plate-shaped isolation silicon plate 50 at the bottom of the reaction vessel body 10, so that the silicon powder entering the reaction vessel body 10 does not come into contact with the bottom of the reaction vessel body 10, which further ensures the purity of the silicon powder during the high-temperature reaction process.

[0032] The bottom of the tank 13 is provided with a discharge pipe 12 communicating with its inner bottom. A second tubular silicon isolation plate 60 is sleeved in the discharge pipe 12. The second tubular silicon isolation plate 60 is also made of monocrystalline silicon or polycrystalline silicon and has a tubular structure that matches the discharge pipe 12. The outer diameter of the second tubular silicon isolation plate 60 matches the inner diameter of the discharge pipe 12. A through hole matching the outer diameter of the second tubular silicon isolation plate 60 is opened on the plate-shaped silicon isolation plate 50 laid in the inner bottom of the tank 13. The second tubular silicon isolation plate 60 is inserted along the discharge pipe 12. After being inserted into the bottom of the tank bottom 13, the plate-shaped isolation silicon plate 50 and the second tubular isolation silicon plate 60, which are inserted into the bottom of the tank bottom 13, are tightly closed around their outer sides. The second tubular isolation silicon plate 60 forms an isolation layer on the inner wall of the discharge pipe 12, preventing the silicon powder in the reaction vessel body 10 from contacting the inner wall of the discharge pipe 12 when it is discharged outwards. This reduces the contamination of the silicon powder by metal ions precipitated from the discharge pipe 12, further ensuring the purity of the silicon powder during the high-temperature reaction process. In this embodiment, for ease of assembly, the tank bottom 13 is detachably connected to the side wall of the reaction vessel body 10.

[0033] In the above embodiments, the number of feed pipes 11 and discharge pipes 12 can be set according to actual usage requirements.

[0034] In the above embodiments, the rectangular isolation silicon plate 20, the plate-shaped isolation silicon plate 50, the first tubular isolation silicon plate 40, and the second tubular isolation silicon plate 60 in the high-temperature reaction vessel are preferably made by cutting polycrystalline silicon. The thickness of the rectangular isolation silicon plate 20, the plate-shaped isolation silicon plate 50, the first tubular isolation silicon plate 40, and the second tubular isolation silicon plate 60 is preferably 8-12 mm. Polycrystalline silicon is manufactured by ingot casting, which is simpler and has lower production costs than monocrystalline silicon. Polycrystalline silicon has the same raw materials, chemical composition, and physical properties as silicon powder, and has high wear resistance and stability. By using polycrystalline silicon to establish an isolation layer on the inner wall of the reaction vessel body 10, the feed pipe 11, and the discharge pipe 12, the silicon powder can be effectively isolated, reducing the precipitation of metal ions in the reaction vessel body 10, the feed pipe 11, and the discharge pipe 12 and preventing contamination of the silicon powder, thus ensuring the purity of the silicon powder during high-temperature reaction and transportation.

[0035] Due to the material properties, the edges and corners of the rectangular isolation silicon plate 20, the plate-shaped isolation silicon plate 50, the first tubular isolation silicon plate 40, and the second tubular isolation silicon plate 60 are relatively fragile and prone to chipping. Therefore, chamfers 22 are provided on the four periphery of the rectangular isolation silicon plate 20, the plate-shaped isolation silicon plate 50, the first tubular isolation silicon plate 40, and the second tubular isolation silicon plate 60.

[0036] It should be noted that during the manufacturing process of this high-temperature resistant reaction vessel, certain gaps or gaps may exist at the joints of the rectangular isolation silicon plates 20, the joints between the rectangular isolation silicon plate 20 and the first tubular isolation silicon plate 40, the joints between the rectangular isolation silicon plate 20 and the plate-shaped isolation silicon plate 50, and the joints between the plate-shaped isolation silicon plate 50 and the second tubular isolation silicon plate 60 due to defects in the construction process. However, in actual use, some silicon powder will enter the gaps or gaps between the high-purity silicon plates and fill them, thereby playing a further sealing role and will not affect the stability of the silicon powder during the reaction process.

[0037] This high-temperature resistant reactor uses rectangular isolation silicon plates 20, plate-shaped isolation silicon plates 50, first tubular isolation silicon plates 40, and second tubular isolation silicon plates 60, all made of polycrystalline or monocrystalline silicon materials, to create an isolation layer within the reactor body 10, the feed pipe 11, and the discharge pipe 12. This prevents the silicon powder entering the reactor body 10 from contacting the fixing component 30, the reactor body 10, the feed pipe 11, and the inner wall of the discharge pipe 12. Since the polycrystalline or monocrystalline silicon has the same raw materials, chemical composition, and physical properties as the silicon powder, it can effectively isolate the silicon powder within the reactor body 10, reducing the contamination of the silicon powder caused by the precipitation of metal ions in the reactor body 10. Furthermore, both polycrystalline and monocrystalline silicon materials have high wear resistance and stability, which can extend the service life of the reactor.

[0038] The above-disclosed embodiments are merely preferred embodiments of the present utility model and should not be construed as limiting the scope of the present utility model. Those skilled in the art can understand that implementing all or part of the above-described embodiments and making equivalent changes in accordance with the claims of the present utility model are still within the scope of the utility model.

Claims

1. A high-temperature resistant reaction vessel for silicon powder purification, characterized in that: The device includes a reaction vessel body, several rectangular isolation silicon plates, and several high-temperature resistant fasteners welded and fixed to the inner wall of the reaction vessel body. The fasteners are fixed at intervals along the circumference of the inner wall of the reaction vessel body and extend along the height direction of the reaction vessel body. A fixed channel is formed between two adjacent fasteners. The rectangular isolation silicon plates have slots on their opposite sides along their length direction that match the fixed channels. The rectangular isolation silicon plates are sequentially inserted into each fixed channel through the slots. The rectangular isolation silicon plates inserted into two adjacent fixed channels and the rectangular isolation silicon plates inserted into each fixed channel are tightly closed to each other, forming an isolation layer on the inner wall of the reaction vessel body to seal the fasteners and the inner wall of the reaction vessel body, so that the silicon powder entering the reaction vessel body does not come into contact with the fasteners and the inner wall of the reaction vessel body.

2. The high-temperature resistant reaction vessel for silicon powder purification as described in claim 1, characterized in that: Each of the aforementioned fasteners includes a long strip-shaped base plate, a stiffening rib, and a retaining plate. The base plate extends along the height direction of the reaction vessel body and is fixedly installed on the inner wall of the reaction vessel body. The stiffening rib extends along the height direction of the reaction vessel body and is fixedly installed at the middle of the upper part of the base plate. The retaining plate extends along the height direction of the reaction vessel body and is fixedly installed at the upper part of the stiffening rib, and is directly opposite and parallel to the base plate. The base plate, stiffening rib, and retaining plate are combined to form a long strip-shaped I-beam frame. The aforementioned fixing channel is formed between the side edges of the retaining plates of two adjacent fasteners. The slots on both sides of the rectangular isolation silicon plate are correspondingly engaged on the side edges of the retaining plates of two adjacent fasteners, and the two adjacent edges of the rectangular isolation silicon plates in the two adjacent fixing channels facing the inner side of the reaction vessel body are tightly closed to each other.

3. The high-temperature resistant reaction vessel for silicon powder purification as described in claim 2, characterized in that: The outer wall of the reaction vessel body is provided with a feed pipe that connects to its interior. A first tubular isolation silicon plate is sleeved in the feed pipe. The first tubular isolation silicon plate is inserted into the reaction vessel body along the feed pipe. The first tubular isolation silicon plate forms an isolation layer on the inner wall of the feed pipe. The rectangular isolation silicon plate on the inner wall of the reaction vessel body and the outer wall of the end of the first tubular isolation silicon plate inserted into the reaction vessel body are tightly closed to each other, so that the silicon powder does not come into contact with the inner wall of the feed pipe when it is transported from the feed pipe into the reaction vessel body.

4. The high-temperature resistant reaction vessel for silicon powder purification as described in claim 2, characterized in that: The bottom of the reaction vessel body is provided with a plate-shaped isolation silicon plate laid in parallel. The lower end of the rectangular isolation silicon plate on the inner wall of the reaction vessel body is close to and closed with the plate-shaped isolation silicon plate at the bottom of the reaction vessel body, so that the silicon powder entering the reaction vessel body does not come into contact with the bottom of the reaction vessel body.

5. The high-temperature resistant reaction vessel for silicon powder purification as described in claim 4, characterized in that: A discharge pipe communicating with the inner bottom of the tank is provided at the outer bottom of the tank. A second tubular isolation silicon plate is sleeved in the discharge pipe. The second tubular isolation silicon plate is inserted into the inner bottom of the tank along the discharge pipe. The second tubular isolation silicon plate forms an isolation layer on the inner wall of the discharge pipe. The plate-shaped isolation silicon plate laid at the inner bottom of the tank and the outer wall of the end of the second tubular isolation silicon plate inserted into the inner bottom of the tank are tightly closed to each other, so that the silicon powder in the reaction tank body does not come into contact with the inner wall of the discharge pipe when it is discharged from the discharge pipe.

6. The high-temperature resistant reaction vessel for silicon powder purification as described in claim 5, characterized in that: The bottom of the tank is detachably connected to the side wall of the reaction vessel body.

7. The high-temperature resistant reaction vessel for silicon powder purification as described in any one of claims 1, 3, and 5, characterized in that: The rectangular isolation silicon plate, the plate-shaped isolation silicon plate, the first tubular isolation silicon plate, and the second tubular isolation silicon plate are all made by cutting monocrystalline silicon or polycrystalline silicon.

8. The high-temperature resistant reaction vessel for silicon powder purification as described in claim 7, characterized in that: The rectangular isolation silicon plate, the plate-shaped isolation silicon plate, the first tubular isolation silicon plate, and the second tubular isolation silicon plate all have chamfered edges on their four perimeters.

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