Gas distribution device and semiconductor thin film deposition apparatus

Abstract

The utility model discloses a kind of gas distribution device and semiconductor thin film deposition equipment, the gas distribution device includes: gas distribution block, air inlet baffle, connecting piece and multiple air guide plates, gas distribution block is opened with air inlet channel passing through its own along its axial direction, connecting piece and multiple air guide plates are located in air inlet channel, connecting piece is arranged along the axial direction of air inlet channel, multiple air guide plates are evenly distributed around the circumferential direction of connecting piece and are arranged along the radial direction of air inlet channel, air inlet baffle is connected with the end of connecting piece close to air inlet channel outlet to be suspended below air inlet channel outlet;Wherein, each air guide plate is provided with air guide face to meet airflow, air guide face and the air inlet direction of airflow flowing along the axial direction of air inlet channel form air inlet deflection angle, air guide face is all towards clockwise direction or counterclockwise direction. By being provided with air guide face with specific deflection angle and same direction, make airflow generate vortex airflow below when passing through air guide plate, effectively improve the uniformity of gas distribution.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to a gas separation device and a semiconductor thin film deposition equipment. Background Technology

[0002] In the field of high-temperature atomic layer deposition (ACHM) technology, with the continuous improvement of thin film material performance requirements, increasingly stringent standards have been placed on the uniformity of thin film performance. This directly leads to a significant increase in the requirements for the uniformity of gas distribution within the reaction chamber. To achieve uniform gas distribution, existing technologies typically place an inlet baffle upstream of the spray plate. This baffle pre-distributes the incoming process gas to promote a relatively uniform distribution of the reactant gas before it enters the reaction chamber, thereby ensuring the quality of thin film deposition. However, the existing inlet baffle design has significant drawbacks: it is fixed to the gas distribution block by three evenly distributed 120-degree connecting structures. These fixed connecting structures obstruct the gas flow path, causing interference with gas flow in the area directly below the connecting structures. This easily leads to localized airflow turbulence, resulting in uneven gas distribution and affecting the uniformity of gas distribution. This makes it difficult to meet the high uniformity requirements of high-temperature ACHM technology. Therefore, an optimized design to improve gas distribution uniformity is urgently needed. Utility Model Content

[0003] The present invention provides a gas distribution device and a semiconductor thin film deposition equipment, which aims to solve the problem that uneven gas distribution is easily caused by the obstruction of the connection structure directly below the existing gas distribution device.

[0004] In a first aspect, the present invention provides an air distribution device, comprising: an air distribution block, an air inlet baffle, a connector, and a plurality of air guide plates. The air distribution block has an air inlet channel extending through it along its axial direction. The connector and the plurality of air guide plates are all disposed in the air inlet channel. The connector is arranged along the axial direction of the air inlet channel. The plurality of air guide plates are evenly distributed around the circumference of the connector and arranged radially along the air inlet channel. The air inlet baffle is connected to one end of the connector near the outlet of the air inlet channel to be suspended below the outlet of the air inlet channel.

[0005] Each of the air guide plates is provided with an air guide surface facing the airflow. The air guide surface forms an air intake deflection angle with the air intake direction of the airflow flowing along the axial direction of the air intake channel. The air guide surfaces are all oriented in a clockwise or counterclockwise direction.

[0006] Furthermore, the air distribution device also includes a rotating shaft, and the air guide plate is provided with a mounting hole that penetrates the air guide plate radially along the air intake channel. The rotating shaft passes through the mounting hole and its two ends are respectively connected to the outer wall of the connector and the inner wall of the air distribution block.

[0007] Furthermore, the intake deflection angle is 0-30 degrees.

[0008] Furthermore, the air intake channel gradually increases in size from its inlet toward its outlet.

[0009] Furthermore, the air guide plate has a vertical end wall and an inclined end wall at both ends of the radial direction of the air intake channel, the vertical end wall is in close contact with the outer wall of the connector, and the inclined end wall is in close contact with the inner wall of the air distribution block.

[0010] Furthermore, the air intake baffle is in the shape of a tapered cone, and the top of the air intake baffle is fixedly connected to one end of the connector near the outlet of the air intake channel.

[0011] Furthermore, the end of the connector near the air intake channel inlet is conical.

[0012] Furthermore, there are three air guide plates, which are evenly distributed at 120-degree intervals along the circumference of the connector.

[0013] Secondly, this utility model also provides a semiconductor thin film deposition apparatus, comprising: a cavity, a spray plate, a gas distribution device, a cover plate, and an air inlet flange. The gas distribution device is the aforementioned gas distribution device. The spray plate is disposed in the cavity, and the cover plate is disposed on the cavity. The cover plate has an air outlet facing the spray plate. The gas distribution block of the gas distribution device is disposed on the cover plate. The outlet of the air inlet channel of the gas distribution block is aligned and connected with the air outlet. The air inlet flange has an air inlet, and the air inlet is aligned and connected with the inlet of the air inlet channel.

[0014] Furthermore, the air inlet, the air inlet channel, and the air outlet are connected in sequence, and the cross-sections of the air inlet, the air inlet channel, and the air outlet gradually increase from the air inlet toward the air outlet.

[0015] This invention provides a gas distribution device and a semiconductor thin film deposition apparatus. The gas distribution device includes a gas distribution block, an inlet baffle, a connector, and multiple guide plates. The gas distribution block has an inlet channel extending through it along its axial direction. The connector and the multiple guide plates are all disposed within the inlet channel. The connector is arranged along the axial direction of the inlet channel, and the multiple guide plates are evenly distributed around the circumference of the connector and arranged radially along the inlet channel. The inlet baffle is connected to the end of the connector near the outlet of the inlet channel to be suspended below the outlet of the inlet channel. Each guide plate has a guide surface facing the airflow. The guide surface forms an inlet deflection angle with the inlet direction of the airflow flowing along the axial direction of the inlet channel, and the guide surfaces are all oriented clockwise or counterclockwise. This device, by forming a deflection angle between the guide surface and the airflow and unifying their orientation, can cause the airflow to form a vortex, effectively improving the problem of uneven gas distribution, enhancing the uniformity of gas distribution, and meeting the requirements of thin film uniformity. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 A cross-sectional schematic diagram of a semiconductor thin film deposition apparatus according to an embodiment of the present invention is shown;

[0018] Figure 2 A cross-sectional schematic diagram of the gas distribution device according to an embodiment of this utility model is shown;

[0019] Figure 3 A cross-sectional schematic diagram of the air guide plate of the air distribution device according to an embodiment of the present invention is shown;

[0020] Figure 4 This invention presents a partially enlarged top view of the gas distribution device according to an embodiment of the present invention;

[0021] Figure 5 Showing Figure 1 Enlarged view of part A;

[0022] Figure label:

[0023] 1. Inlet flange; 11. Inlet port; 2. Air distribution device; 21. Air distribution block; 211. Inlet channel; 22. Inlet baffle; 23. Connecting piece; 24. Air guide plate; 241. Air guide surface; 242. Mounting hole; 243. Vertical end wall; 244. Inclined end wall; 25. Rotating shaft; 3. Cover plate; 31. Air outlet; 4. Spray plate; 5. Cavity. Detailed Implementation

[0024] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0025] The directional terms used in this invention, such as "up," "down," "front," "back," "left," "right," "inner," "outer," and "side," are merely for reference to the accompanying drawings. Therefore, the directional terms used are for explanation and understanding of this invention, and not for limiting it. Furthermore, in the accompanying drawings, structures that are similar or identical are indicated by the same reference numerals.

[0026] In high-temperature ACHM processes, the uniformity of the thin film performance places extremely high demands on the uniformity of gas distribution. Existing gas distribution devices typically use an inlet baffle upstream of the spray plate for pre-distribution. However, this inlet baffle is installed on the gas distribution block via multiple connecting structures distributed at fixed angles. These connecting structures create physical obstructions in the gas flow path, causing airflow turbulence in the area directly below the connecting structures. In other words, the area directly below the connecting structures is blocked, resulting in less airflow passing through, while the gaps between adjacent connecting structures are unobstructed, allowing more airflow to pass through. This leads to uneven gas distribution, which in turn affects the uniformity of thin film deposition.

[0027] To address this issue, this invention provides a gas distribution device and a semiconductor thin film deposition apparatus. By using an adjustable-angle gas guide plate to generate a vortex airflow below the gas guide plate, the problem of uneven airflow distribution is solved, effectively improving the uniformity of gas distribution and enhancing the uniformity of the thin film.

[0028] To solve the aforementioned problem of uneven gas distribution, this embodiment of the invention offers the following specific approach:

[0029] By optimizing the structural design and installation method of the air guide plates, adjustable-angle air guide plates are used to guide airflow into an orderly vortex, eliminating local airflow unevenness. Specifically, the air guide plates are installed in the air intake channel of the gas distributor via a rotating shaft structure, allowing each air guide plate to rotate around the shaft to adjust the angle of the air guide surface facing the airflow. Multiple air guide plates are evenly distributed around the circumference of the connector, with their air guide surfaces uniformly facing clockwise or counterclockwise. When the gas flows axially along the air intake channel, by adjusting the deflection angle of the air guide surface relative to the air intake direction, the airflow can be guided to generate a rotational tendency after impacting the air guide surface, forming a stable vortex. This allows the gas to diffuse more evenly after passing through the air intake channel outlet, thus avoiding local air distribution unevenness caused by fixed structural obstruction. Furthermore, the adjustable angle function achieved through the rotating shaft can adapt to the air distribution requirements under different process conditions, further improving the controllability and applicability of air distribution uniformity.

[0030] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0031] Please see Figures 1-5 This utility model embodiment illustrates an air distribution device 2, comprising: an air distribution block 21, an air inlet baffle 22, a connector 23, and multiple air guide plates 24. The air distribution block 21 has an air inlet channel 211 extending through it along its axial direction. The connector 23 and the multiple air guide plates 24 are all disposed in the air inlet channel 211. The connector 23 is arranged along the axial direction of the air inlet channel 211. The multiple air guide plates 24 are evenly distributed around the circumference of the connector 23 and arranged radially along the air inlet channel 211. The air inlet baffle 22 is connected to one end of the connector 23 near the outlet of the air inlet channel 211 to be suspended below the outlet of the air inlet channel 211. Each air guide plate 24 has an air guide surface 241 facing the airflow. The air guide surface 241 forms an air inlet deflection angle with the airflow direction flowing along the axial direction of the air inlet channel 211. The air guide surfaces 241 are all oriented in a clockwise or counterclockwise direction.

[0032] Reference Figure 1-4Specifically, the gas distribution block 21 in the gas distribution device 2 can be cylindrical, cuboid, or other three-dimensional structures adapted to the installation scenario, without limitation. Its main function is to serve as the base of the device, providing an installation foundation for other components and forming a channel for gas flow. The air inlet channel 211 is a channel that runs through the gas distribution block 21 along its axial direction. Its cross-sectional shape can be circular, square, or polygonal, etc., for allowing the cleaning gas to flow axially. The connecting member 23 can be a rod-shaped structure, such as a cylindrical rod or a prism rod, or a tubular structure. Its function is to connect and support the air guide plate 24 and the air inlet baffle 22, keeping them in a relatively fixed positional relationship. The number of the multiple air guide plates 24 can be set to 2, 3, 4, or more according to actual needs. Their shape can be flat, arc-shaped, etc. The air guide surface 241 facing the airflow on each air guide plate 24 can be set as a flat or slightly arc-shaped surface, used to interact with the airflow to change the airflow direction. The air intake baffle 22 can be a circular plate, a square plate, or a plate with a flow guiding structure on the edge. Its function is to further distribute the gas flowing out from the air intake channel 211 so that the gas enters the spray plate 4 more smoothly.

[0033] Specifically, the gas distributor 21 serves as a basic component, with its axially extending intake channel 211 providing space for gas flow and component installation. The connector 23 is positioned within the intake channel 211 along its axial direction. Multiple guide plates 24 are evenly distributed around the connector 23, meaning the included angle between adjacent guide plates 24 is equal, and each guide plate 24 is radially positioned along the intake channel 211. Their connection to the connector 23 can be a fixed connection (e.g., welding, integral molding) or a rotatable connection (e.g., via a pivot 25, hinge connection). The intake baffle 22 is connected to the end of the connector 23 near the outlet of the intake channel 211. The connection method can be welding, threaded connection, or snap-fit ​​connection. After connection, the intake baffle 22 is suspended below the outlet of the intake channel 211, maintaining a certain distance from the outlet to allow gas passage. The air guide surface 241 of each air guide plate 24 forms an air intake deflection angle α with the air intake direction of the airflow flowing along the axial direction of the air intake channel 211. This deflection angle α can be formed by setting a fixed angle of the air guide plate 24 or by adjusting it through a rotatable connection structure. All air guide surfaces 241 of all air guide plates 24 are uniformly oriented in a clockwise direction or uniformly oriented in a counterclockwise direction.

[0034] By aligning the air guide surfaces 241 of multiple air guide plates 24 with the axial airflow at an inlet deflection angle while maintaining the same direction, the gas flowing through the air guide plates 24 will exhibit a rotational tendency under the guidance of the air guide surfaces 241, forming an orderly vortex airflow. This vortex airflow promotes thorough mixing and diffusion of the gas, effectively avoiding the localized uneven gas distribution phenomenon caused by the obstruction of the fixed connection structure in the prior art. Simultaneously, the inlet baffle 22 further organizes the airflow below the outlet of the inlet channel 211, enabling the gas to be more evenly distributed in the reaction area, thereby improving the gas distribution uniformity of the gas distribution device 2. This meets the high requirements for film uniformity in processes such as high-temperature ACHM, and by encompassing various air guide plate 24 configurations, including fixed-angle and adjustable-angle options, it can adapt to the gas distribution needs under different process conditions.

[0035] Reference Figure 2 In one embodiment, the air distribution device 2 further includes a rotating shaft 25. The air guide plate 24 is provided with a mounting hole 242 that radially penetrates the air guide plate 24 along the air intake channel 211. The rotating shaft 25 passes through the mounting hole 242, and its two ends are respectively connected to the outer wall of the connector 23 and the inner wall of the air distribution block 21. Specifically, the air distribution device 2 further includes a rotating shaft 25. Each air guide plate 24 is provided with a mounting hole 242 that radially penetrates the air guide plate 24 along the air intake channel 211. The cross-sectional shape of the mounting hole 242 can be adapted to the rotating shaft 25, such as circular or square. The rotating shaft 25 passes through the mounting hole 242, and one end can be connected to the outer wall of the connector 23 by welding, snap-fit, or threaded connection, etc. The other end is connected to the inner wall of the air distribution block 21 by the same method. With the cooperation of the rotating shaft 25 and the mounting hole 242, the air guide plate 24 can rotate around the rotating shaft 25, so that the air guide plate 24 can be rotated and adjusted within a certain angle range around the rotating shaft 25, thereby realizing the adjustment of the air intake deflection angle between the air guide surface 241 and the air intake direction. This allows the angle of the air guide plate 24 to be flexibly changed according to different process requirements, further improving the controllability of gas distribution uniformity and adapting to more diverse gas distribution scenarios.

[0036] Reference Figure 3In this embodiment, the air intake deflection angle is 0-30 degrees. Specifically, the air intake deflection angle α formed between the air guide surface 241 of the air guide plate 24 and the air intake direction of the airflow flowing axially along the air intake channel 211 is 0-30 degrees. When the deflection angle is 0 degrees, the air guide plate 24 is parallel to the airflow direction. As the angle increases, the swirling effect gradually strengthens, and 30 degrees is the verified optimal upper limit value. The angle adjustment can be achieved through manual operation, tooling assistance, or automatic control. The operator can select the most suitable deflection angle according to the actual process requirements to obtain the best gas distribution uniformity effect. The setting of this angle range can ensure that the air guide surface 241 effectively guides the airflow, prompting the airflow to generate sufficient rotational tendency to form vortices, achieving uniform gas mixing and diffusion, while avoiding a significant increase in airflow resistance due to an excessively large angle, which would affect the gas flow efficiency, thereby achieving a balance between gas distribution uniformity and gas flowability.

[0037] Reference Figure 5 In one embodiment, the air intake channel 211 gradually increases in size from its inlet to its outlet. Specifically, the air intake channel 211 gradually increases in size from its inlet to its outlet, and its cross-sectional dimensions can be continuously or steppedly increased along the axial direction. For example, the inlet may have a circular cross-section with a small diameter, while the outlet may also have a circular cross-section with a larger diameter, or the inlet may have a square cross-section, and the outlet may have a larger square cross-section, etc. This structural design allows the flow space to gradually expand as the gas flows along the air intake channel 211, which can reduce the gas velocity and reduce the disturbance caused by airflow impact. At the same time, it provides more sufficient diffusion space for the vortex airflow guided by the air guide plate 24, avoiding airflow turbulence caused by narrow channels, further promoting uniform gas mixing, and working in conjunction with the guiding effect of the air guide plate 24 to improve the overall gas distribution effect.

[0038] Continue to refer to Figure 5In this embodiment, the air guide plate 24 is provided with a vertical end wall 243 and an inclined end wall 244 at both ends of the radial direction of the air intake channel 211. The vertical end wall 243 is in close contact with the outer wall of the connector 23, and the inclined end wall 244 is in close contact with the inner wall of the air distribution block 21. Specifically, the air guide plate 24 is provided with a vertical end wall 243 and an inclined end wall 244 at both ends of the radial direction of the air intake channel 211. The vertical end wall 243 is in close contact with the outer wall of the connector 23, and the contact can be achieved through surface contact to ensure the relative position between the two is stable. The inclined end wall 244 is in close contact with the inner wall of the air distribution block 21. Since the air intake channel 211 has a shape that gradually increases from the inlet to the outlet, the corresponding position of the inner wall of the air distribution block 21 is an inclined surface. The inclination angle of the inclined end wall 244 is adapted to the inclination angle of the inner wall to achieve a tight fit. This structural design makes the connection between the air guide plate 24, the connector 23, and the air distribution block 21 more stable, preventing the gas from forming turbulence in the gap. At the same time, the fit between the inclined end wall 244 and the inner wall of the air distribution block 21 can guide the airflow to flow smoothly along the inner wall of the channel, reducing airflow resistance. Combined with the deflection angle design of the air guide surface 241, it further enhances the orderliness of the vortex airflow and improves the uniformity of air distribution.

[0039] Reference Figure 5 In one embodiment, the intake baffle 22 is a tapered cone shape, and the top of the intake baffle 22 is fixedly connected to the end of the connector 23 near the outlet of the intake channel 211. Specifically, the intake baffle 22 adopts a tapered cone structure, that is, its overall shape is a cone, but the top is cut off to form a flat or small-area end face. This structure gives the intake baffle 22 a side that gradually expands from the top to the bottom. The top of the intake baffle 22 is fixedly connected to the end of the connector 23 near the outlet of the intake channel 211. The connection method can be welding, threaded connection, or integral molding, etc., to ensure a stable connection between the two. When the gas flows out of the intake channel 211, it will first come into contact with the side of the intake baffle 22. Since the side of the truncated cone is inclined, it can guide the airflow, so that the gas can be evenly diffused along the side, avoiding local accumulation or turbulence after the airflow directly impacts the baffle. At the same time, this structure can increase the contact area between the gas and the baffle, reduce the airflow impact force per unit area, and make the gas disperse more smoothly in all directions. In addition, it can further cooperate with the vortex airflow formed by the guide plate 24 to improve the uniformity of gas distribution in the reaction area.

[0040] Reference Figure 5In one embodiment, the end of the connector 23 near the inlet of the air intake channel 211 is conical. Specifically, the end of the connector 23 near the inlet of the air intake channel 211 is conical, meaning that the end has a conical structure with the tip facing the inlet of the air intake channel 211. When gas flows in from the inlet of the air intake channel 211, it first comes into contact with the conical end of the connector 23. Since the conical surface is a smooth, inclined curved surface, the airflow can smoothly flow outwards along the conical surface, avoiding airflow impact and turbulence caused by the end of the connector 23 being a flat surface or other right-angled structure. This conical design can guide the gas to form a more orderly flow state in the early stage of entering the air intake channel 211, reducing local stagnation of the airflow near the connector 23, and making the gas flow more evenly to the surrounding air guide plates 24. This provides a basis for the subsequent formation of vortex airflow by the air guide plates 24 through deflection angle, thereby further improving the uniformity of the gas distribution of the entire gas distribution device 2. At the same time, the conical structure can reduce the resistance to gas flow, ensuring that the gas passes through the intake channel 211 in a more stable state.

[0041] Reference Figure 4 In one embodiment, three air guide plates 24 are provided, and the three air guide plates 24 are evenly distributed at 120-degree intervals along the circumferential direction of the connector 23. Specifically, the number of air guide plates 24 is set to three, and the three air guide plates 24 are evenly distributed at 120-degree intervals along the circumferential direction of the connector 23, that is, the central angle between any two adjacent air guide plates 24 is 120 degrees. This distribution can form a balanced airflow layout around the connector 23, making the force and guidance of the airflow in the circumferential direction within the air intake channel 211 more symmetrical. When the gas flows axially along the air intake channel 211, the three air guide plates 24 distributed at 120-degree intervals can guide the airflow from three evenly spaced directions. Combined with the uniform orientation of the air guide surface 241 (clockwise or counterclockwise), it can more stably promote the formation of rotating vortices in the airflow, avoiding problems such as increased airflow resistance due to too many air guide plates 24, or uneven guiding force and unstable vortex formation due to too few air guide plates 24. Meanwhile, the 120-degree interval distribution pattern is highly compatible with the circumferential structure of the air distribution device 2, which allows the effective range of each air guide plate 24 to uniformly cover the radial cross section of the air intake channel 211, ensuring that the airflow can be fully and uniformly guided when passing through the area of ​​the air guide plate 24, further improving the air distribution uniformity of the air distribution device 2.

[0042] Reference Figure 1-5This utility model embodiment also provides a semiconductor thin film deposition apparatus, including: a cavity 5, a spray plate 4, a gas distribution device 2, a cover plate 3, and an inlet flange 1. The gas distribution device 2 is the one described above. The spray plate 4 is disposed inside the cavity 5, and the cover plate 3 covers the cavity 5. The cover plate 3 has an outlet 31 facing the spray plate 4. The gas distribution block 21 of the gas distribution device 2 is disposed on the cover plate 3. The outlet of the inlet channel 211 of the gas distribution block 21 is aligned and connected to the outlet 31. The inlet flange 1 has an inlet 11, which is aligned and connected to the inlet of the inlet channel 211. The gas distribution device 2 has been described in detail in the above embodiments, and for the sake of brevity, it will not be described again here.

[0043] Specifically, the semiconductor thin film deposition equipment includes a cavity 5, a spray plate 4, a gas distribution device 2, a cover plate 3, and an inlet flange 1, wherein the gas distribution device 2 is the same as that described in the above embodiment. The cavity 5 serves as the reaction space for thin film deposition, providing a closed environment for the internal process reactions. The spray plate 4 is disposed within the cavity 5 and is used to uniformly spray gas onto the surface of the wafer to be processed. It can adopt a plate-like structure with multiple fine nozzles to ensure that the gas enters the reaction area in a dispersed state. The cover plate 3 covers the cavity 5, sealing it. The cover plate 3 has an outlet 31 facing the spray plate 4. This outlet 31 serves as a transition channel for gas to enter the cavity 5 from the gas distribution device 2, and its shape and size can be adapted to the outlet of the inlet channel 211 of the gas distribution device 2. The gas distribution block 21 of the gas distribution device 2 is installed on the cover plate 3. The installation method can be bolted, snap-fitted, or welded, so that the outlet of the gas inlet channel 211 of the gas distribution block 21 is aligned and connected with the outlet 31 on the cover plate 3, ensuring that the gas processed by the gas distribution device 2 can smoothly enter the cavity 5 through the outlet 31. An inlet port 11 is provided on the inlet flange 1 for receiving external cleaning gas. The inlet port 11 is aligned and connected with the inlet of the gas inlet channel 211 of the gas distribution device 2. The connection method can be through pipeline connection or direct docking, so that the external gas can enter the gas distribution device 2 for processing along the path of the inlet port 11 and the inlet channel 211. During equipment operation, external gas enters the inlet channel 211 of the gas distribution device 2 through the inlet 11 of the inlet flange 1. Guided by the guide plate 24 inside the gas distribution device 2, a vortex airflow is formed, achieving uniform mixing and distribution of the gas. Subsequently, the gas enters the cavity 5 through the outlet of the inlet channel 211 and the outlet 31 of the cover plate 3, and is then uniformly sprayed onto the substrate surface by the dispersion effect of the spray plate 4, completing the thin film deposition process. By employing the aforementioned gas distribution device 2, this semiconductor thin film deposition equipment effectively solves the problem of uneven gas distribution in traditional equipment, improves the uniformity of gas distribution within the cavity 5, and thus enhances the uniformity of the deposited thin film, meeting the requirements of high-precision thin film deposition processes such as high-temperature ACHM. Simultaneously, the alignment and interconnection design between components ensures smooth gas flow paths, reduces airflow resistance and disturbances, and further guarantees process stability.

[0044] It should be noted that in this embodiment, the process gas of the semiconductor thin film deposition equipment enters from the gas distribution block 21, and the cleaning gas enters from the gas inlet flange 1. The gas inlet paths of the process gas and the cleaning gas are different.

[0045] The process gas intake path is as follows: multiple intake holes are radially provided on the gas distribution block 21, and these intake holes are all connected to the inlet of the intake channel 211. The process gas enters from the four sides of the gas distribution block 21 through the above-mentioned multiple intake holes, and after converging at the inlet of the intake channel 211, it flows into the interior of the intake channel 211. Since the multiple intake holes are evenly distributed radially along the gas distribution block 21, the process gas enters from all sides simultaneously, which can form a relatively balanced initial airflow state at the inlet of the intake channel 211, reducing the airflow deviation that may be caused by unilateral intake. After entering the intake channel 211, the gas forms a vortex airflow under the guidance of the guide plate 24. After further mixing and distribution, it enters the cavity 5 through the outlet of the intake channel 211 and the outlet 31 of the cover plate 3 in sequence, and finally is sprayed to the reaction area by the spray plate 4. This radially porous air intake design, combined with the flow guiding structure inside the gas distribution device 2, ensures that the process gas has good uniformity before entering the reaction chamber, providing a stable gas source foundation for the thin film deposition process.

[0046] The cleaning gas enters through the inlet 11 of the inlet flange 1, flows directly into the inlet of the inlet channel 211 of the gas distributor 2, and then flows axially along the inlet channel 211. As it flows past the guide plate 24, it is guided by the guide surface 241 to form a vortex airflow, achieving uniform gas diffusion. Afterwards, it enters the cavity 5 through the outlet of the inlet channel 211 and the outlet 31 of the cover plate 3, cleaning the spray plate 4 and other components within the cavity 5. Unlike the radially porous intake of the process gas, the cleaning gas enters through the inlet flange 1. This design utilizes the structural characteristics of the inlet flange 1 to easily control the flow rate and pressure of the cleaning gas, allowing it to enter the inlet channel 211 with sufficient impact force. Combined with the diffusion effect of the vortex airflow, this more comprehensively covers the areas inside the cavity 5 that need cleaning, ensuring thorough cleaning.

[0047] Reference Figure 5In one embodiment, the air inlet 11, the air inlet channel 211, and the air outlet 31 are sequentially connected, and the cross-sections of the air inlet 11, the air inlet channel 211, and the air outlet 31 gradually increase from the air inlet 11 towards the air outlet 31. Specifically, in this semiconductor thin film deposition equipment, the air inlet 11 on the air inlet flange 1, the air inlet channel 211 of the gas distribution device 2, and the air outlet 31 on the cover plate 3 are sequentially connected to form a complete gas flow path. The cross-sectional dimensions of the three gradually increase from the air inlet 11 towards the air outlet 31, that is, the cross-sectional area of ​​the air inlet 11 is the smallest, the cross-sectional area of ​​the air inlet channel 211 is larger than that of the air inlet 11, and the cross-sectional area of ​​the air outlet 31 is the largest. Among them, the outward expansion slope of the air outlet 31 is significantly greater than that of the air inlet 11 and the air inlet channel 211, that is, the expansion range of the cross-section of the air outlet 31 within the same axial length is significantly larger, making the air outlet 31 form a large-diameter structure. After entering through inlet 11, the gas velocity gradually decreases as the flow cross-section expands, reducing airflow disturbance and maintaining a stable state before entering the inlet channel 211 of the gas distributor 2. After being guided by the guide plate 24 within the gas distributor 2 to form a uniform vortex airflow, the gas enters the outlet 31 with a larger outward expansion slope, rapidly diffusing to a larger cross-sectional area over a short distance. This allows for uniform coverage of the area above the spray plate 4, providing a sufficient and evenly distributed gas source for the spray plate 4. The large-diameter outlet 31 and its corresponding arrangement with the spray plate 4 ensure that the gas forms a broad and uniform distribution before reaching the spray plate 4. Combined with the dispersing function of the spray plate 4, this further enhances the uniformity of gas distribution within the cavity 5, ultimately ensuring the uniformity and consistency of semiconductor thin film deposition.

[0048] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this utility model, and these modifications or substitutions should all be covered within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.

Claims

1. A gas distribution device, characterized in that, include: The air distribution block comprises an air intake baffle, a connector, and multiple air guide plates. The air distribution block has an air intake channel extending through it along its axial direction. The connector and multiple air guide plates are all disposed in the air intake channel. The connector is arranged along the axial direction of the air intake channel. The multiple air guide plates are evenly distributed around the circumference of the connector and arranged radially along the air intake channel. The air intake baffle is connected to the end of the connector near the outlet of the air intake channel to be suspended below the outlet of the air intake channel. Each of the air guide plates is provided with an air guide surface facing the airflow. The air guide surface forms an air intake deflection angle with the air intake direction of the airflow flowing along the axial direction of the air intake channel. The air guide surfaces are all oriented in a clockwise or counterclockwise direction.

2. The gas distribution device of claim 1, wherein It also includes a rotating shaft. The air guide plate has a mounting hole that extends radially through the air intake channel. The rotating shaft passes through the mounting hole and its two ends are respectively connected to the outer wall of the connector and the inner wall of the air distribution block.

3. The gas distribution device of claim 2, wherein The intake deflection angle is 0-30 degrees.

4. The gas distribution device of claim 2, wherein The air intake channel gradually increases in size from its inlet toward its outlet.

5. The gas distribution device of claim 4, wherein The air guide plate has a vertical end wall and an inclined end wall at both ends of the radial direction of the air intake channel. The vertical end wall is in close contact with the outer wall of the connector, and the inclined end wall is in close contact with the inner wall of the air distribution block.

6. The gas distribution device of claim 1, wherein The air intake baffle is in the shape of a tapered cone, and the top of the air intake baffle is fixedly connected to the end of the connector near the outlet of the air intake channel.

7. The gas distribution device of claim 1, wherein The end of the connector near the air intake channel inlet is conical.

8. The gas distribution device of any of claims 1-7, wherein, The air guide plate is provided in three parts, and the three air guide plates are evenly distributed at 120-degree intervals along the circumference of the connector.

9. A semiconductor thin film deposition apparatus, characterized by comprising: include: The device comprises a cavity, a spray plate, a gas distribution device, a cover plate, and an air inlet flange. The gas distribution device is the gas distribution device according to any one of claims 1-8. The spray plate is disposed in the cavity, and the cover plate is disposed on the cavity. The cover plate has an air outlet facing the spray plate. The gas distribution block of the gas distribution device is disposed on the cover plate. The outlet of the air inlet channel of the gas distribution block is aligned and connected with the air outlet. The air inlet flange has an air inlet, and the air inlet is aligned and connected with the inlet of the air inlet channel.

10. The semiconductor thin film deposition apparatus according to claim 9, wherein The air inlet, the air inlet channel, and the air outlet are connected in sequence, and the cross-sections of the air inlet, the air inlet channel, and the air outlet gradually increase from the air inlet toward the air outlet.

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