Perovskite solar cell
By using a 4PADCB layer to modify the metal oxide hole transport layer and electrodes in perovskite solar cells, the problems of interface defects and insufficient adhesion were solved, thereby improving the efficiency and stability of the device.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- 旗滨新能源发展(深圳)有限责任公司
- Filing Date
- 2025-05-19
- Publication Date
- 2026-07-07
AI Technical Summary
Interfacial defects exist between the hole transport layer and the electrode in perovskite solar cells, leading to reduced carrier collection efficiency. Furthermore, the poor chemical compatibility between the metal oxide hole transport layer and the electrode affects the stability and lifespan of the device.
A 4PADCB layer is used to modify the metal oxide hole transport layer and the electrode. The anchoring groups of the 4PADCB layer passivate the defects on the electrode surface and avoid direct contact between the metal oxide hole transport layer and the electrode, thereby improving energy level matching and increasing adhesion.
This improved the efficiency and stability of perovskite solar cells, enhanced hole extraction efficiency, reduced energy loss, and extended device lifespan.
Smart Images
Figure CN224473678U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of solar cell technology, and in particular to a perovskite solar cell. Background Technology
[0002] Due to the limitations of the fabrication process, interface defects easily form between the hole transport layer and the electrodes in perovskite solar cells. These defects can act as non-radiative recombination centers, reducing carrier collection efficiency and thus affecting the overall performance of the device. Furthermore, the poor chemical compatibility between metal oxide hole transport layer materials such as nickel oxide (NiOx) and the electrodes results in poor adhesion between them. This poor bonding not only affects charge transport efficiency but may also lead to delamination or degradation of the device during long-term operation or under environmental stress, thereby impacting the device's stability and lifespan. Utility Model Content
[0003] The main purpose of this invention is to propose a perovskite solar cell that aims to solve the problem of defects existing between the hole transport layer (such as NiOx) and the transparent front electrode in the prior art.
[0004] To achieve the above objectives, this utility model proposes a perovskite solar cell, comprising a first electrode layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a second electrode layer stacked sequentially.
[0005] The hole transport layer includes a stacked 4PADCB layer and a metal oxide hole transport layer.
[0006] In one embodiment, the 4PADCB layer includes a first 4PADCB layer and a second 4PADCB layer, and the metal oxide hole transport layer is disposed between the first 4PADCB layer and the second 4PADCB layer.
[0007] In one embodiment, the thickness of the first 4PADCB layer is 2 nm to 5 nm; and / or,
[0008] The thickness of the second 4PADCB layer is 5nm to 10nm.
[0009] In one embodiment, the metal oxide hole transport layer includes a NiO layer, a NiO2 layer, a CuO2 layer, or a CuO layer; and / or,
[0010] The thickness of the metal oxide hole transport layer is 5 nm to 20 nm.
[0011] In one embodiment, the first electrode layer includes a transparent front electrode layer, and the second electrode layer includes a metal electrode layer.
[0012] In one embodiment, the thickness of the first electrode layer is 100 nm to 300 nm; and / or,
[0013] The thickness of the second electrode layer is 50 nm to 200 nm; and / or,
[0014] The thickness of the electron transport layer is 10 nm to 40 nm.
[0015] In one embodiment, the perovskite light-absorbing layer includes a perovskite layer and a perovskite modification layer, wherein the perovskite modification layer is disposed between the perovskite layer and the electron transport layer.
[0016] In one embodiment, the thickness of the perovskite modification layer is 1 nm to 10 nm; and / or,
[0017] The perovskite modification layer includes a piperazine hydroiodide layer.
[0018] In one embodiment, the perovskite solar cell further includes a hole-blocking layer disposed between the electron transport layer and the second electrode layer.
[0019] In one embodiment, the hole-blocking layer comprises a copper bath layer or a SnO2 layer; and / or,
[0020] The thickness of the hole blocking layer is 1 nm to 20 nm.
[0021] In this invention, a 4PADCB layer is used to modify the metal oxide hole transport layer and the first electrode layer. The anchoring groups of the 4PADCB layer can effectively passivate surface defects of the first electrode. Furthermore, the terminal functional groups of the 4PADCB layer prevent direct contact between the metal oxide hole transport layer and the first electrode, solving the problem of insufficient adhesion between them. The 4PADCB layer can also effectively passivate bottom defects of the metal oxide hole transport layer. This structural design can improve the efficiency and stability of perovskite solar cells. Attached Figure Description
[0022] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.
[0023] Figure 1 This is a structural diagram of the perovskite solar cell in Embodiment 2 provided by this utility model;
[0024] Figure 2 The current density-voltage (JV) characteristic curves of the perovskite solar cells in Embodiment 1, Embodiment 2 and Comparative Example 1 provided by this utility model;
[0025] Figure 3 The maximum power point (MPPT) output curves of the perovskite solar cells in Embodiment 1, Embodiment 2, and Comparative Example 1 provided by this utility model.
[0026] Explanation of icon numbers:
[0027] 100. Perovskite solar cell; 1. First electrode layer; 2. Hole transport layer; 21. First 4PADCB layer; 22. Metal oxide hole transport layer; 23. Second 4PADCB layer; 3. Perovskite light-absorbing layer; 31. Perovskite layer; 32. Perovskite modification layer; 4. Electron transport layer; 5. Hole blocking layer; 6. Second electrode layer.
[0028] The realization of the purpose, functional features and advantages of this utility model will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation
[0029] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions in the embodiments of this utility model will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Where the manufacturers of reagents or instruments are not specified, they are all conventional products that can be purchased commercially. Furthermore, the meaning of "and / or" throughout the text includes three parallel solutions; for example, "A and / or B" includes solution A, or solution B, or a solution where both A and B are satisfied simultaneously. In addition, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.
[0030] Due to the limitations of the fabrication process, interface defects easily form between the hole transport layer and the electrodes in perovskite solar cells. These defects can act as non-radiative recombination centers, reducing carrier collection efficiency and thus affecting the overall performance of the device. Furthermore, the poor chemical compatibility between metal oxide hole transport layer materials such as nickel oxide (NiOx) and the electrodes results in poor adhesion between them. This poor bonding not only affects charge transport efficiency but may also lead to delamination or degradation of the device during long-term operation or under environmental stress, thereby impacting the device's stability and lifespan.
[0031] In view of this, the present invention provides a perovskite solar cell 100, comprising a first electrode layer 1, a hole transport layer 2, a perovskite light-absorbing layer 3, an electron transport layer 4, and a second electrode layer 6 stacked sequentially; wherein the hole transport layer 2 comprises a 4PADCB layer and a metal oxide hole transport layer 22 stacked together.
[0032] In this invention, a 4PADCB layer is used to modify the metal oxide hole transport layer 22 and the first electrode layer 1. The anchoring groups of the 4PADCB layer can effectively passivate surface defects of the first electrode. The terminal functional groups of the 4PADCB layer also prevent direct contact between the metal oxide hole transport layer 22 and the first electrode, solving the problem of insufficient adhesion between them. Furthermore, the 4PADCB layer can effectively passivate bottom defects of the metal oxide hole transport layer 22. This structural design can improve the efficiency and stability of the perovskite solar cell 100.
[0033] Among them, 4PADCB is ((4-(7H-dibenzo[c,g]carbazol-7-yl)butyl)phosphonic acid, and its Chinese name is ((4-(7h-dibenzo[c,g]carbazol-7-yl)butyl)phosphonic acid. Its structure has a molten 7h-dibenzo[c,g]carbazol terminal group, a butyl linking group, and a phosphonic acid group as a substrate surface anchor.
[0034] It should be noted that the first electrode layer 1 can be a transparent front electrode or a metal electrode. When the first electrode layer 1 is a transparent front electrode, the second electrode layer 6 is a metal electrode; when the first electrode layer 1 is a metal electrode, the second electrode layer 6 is a transparent front electrode.
[0035] When the first electrode layer 1 is a transparent front electrode, the perovskite solar cell 100 of this invention has an inverted perovskite solar cell structure. The 4PADCB layer disposed between the first electrode layer 1 and the metal oxide hole transport layer 22 is a self-assembled monolayer (SAM), which has unique and flexible chemical structural characteristics and physical interface properties. The structural design of the metal oxide hole transport layer 22 / 4PADCB interface not only securely anchors the 4PADCB molecules on the interface of the metal oxide hole transport layer 22 / perovskite light-absorbing layer 3, but also establishes a strong hole selection layer. However, defects still exist between the metal oxide hole transport layer 22 and the perovskite light-absorbing layer 3, which will seriously affect the photoelectric performance and stability of the device.
[0036] like Figure 1As shown, in some embodiments of this invention, the 4PADCB layer includes a first 4PADCB layer 21 and a second 4PADCB layer 23, and the metal oxide hole transport layer 22 is disposed between the first 4PADCB layer 21 and the second 4PADCB layer 23. The placement of the second 4PADCB layer 23 between the metal oxide hole transport layer 22 and the perovskite light-absorbing layer 3 reduces defects between the two layers and improves the energy level matching between them, thereby increasing hole extraction efficiency and reducing energy loss.
[0037] In some embodiments of this invention, the thickness of the first 4PADCB layer 21 is 2nm to 5nm. That is, the thickness of the first 4PADCB layer 21 can be 2nm, 3nm or 5nm. When its thickness is higher than 5nm, the extra groups will hinder carrier transport and affect the device current and fill factor; when its thickness is lower than 2nm, there are not enough groups to passivate defects, which will affect the device voltage and fill factor.
[0038] In some embodiments of this invention, the thickness of the second 4PADCB layer 23 is 5nm to 10nm. That is, the thickness of the second 4PADCB layer 23 can be 5nm, 6nm, or 10nm, etc. When its thickness is higher than 10nm, the extra groups will hinder carrier transport and affect the device current and fill factor; when its thickness is lower than 5nm, there are not enough groups to passivate defects, which will affect the device voltage and fill factor.
[0039] In some embodiments of this invention, the metal oxide hole transport layer 22 includes a NiO layer, a NiO2 layer, a CuO2 layer, or a CuO layer. These layers possess good hole transport capability, suitable energy level matching, and relatively high stability.
[0040] In some embodiments of this invention, the thickness of the metal oxide hole transport layer 22 is 5 nm to 20 nm. That is, the thickness of the metal oxide hole transport layer 22 can be 5 nm, 10 nm, or 20 nm. When its thickness is higher than 20 nm, the excess functional groups will hinder carrier transport, affecting the device current and fill factor; when its thickness is lower than 5 nm, there are not enough functional groups to pair with 4PADCB, resulting in poor passivation and affecting the device voltage and fill factor.
[0041] In some embodiments of this invention, the first electrode layer 1 includes a transparent front electrode layer, and the second electrode layer 6 includes a metal electrode layer. Specifically, in some embodiments of this invention, the thickness of the first electrode layer 1 is 100nm to 300nm. That is, the thickness of the first electrode layer 1 can be 100nm, 250nm, or 300nm. When its thickness is higher than 300nm, the light transmittance and conductivity are poor, interface defects increase, and the device current and carrier transport are affected. When its thickness is lower than 100nm, the conductivity and light transmittance are insufficient, the interface is unstable, and the device current and carrier transport are affected. In some embodiments of this invention, the thickness of the second electrode layer 6 is 50nm to 200nm. That is, the thickness of the second electrode layer 6 can be 50nm, 80nm, 140nm, or 200nm. When its thickness is higher than 200nm, light reflection is severe, affecting the device current and increasing costs. When its thickness is lower than 50nm, the conductivity is poor, the carrier transport capacity is insufficient, and the overall device performance deteriorates. It is understood that the transparent front electrode layer includes an indium tin oxide (ITO) layer or a fluorine-doped tin oxide (FTO) layer; the metal electrode layer includes a silver layer or a gold layer.
[0042] In some embodiments of this invention, the thickness of the electron transport layer 4 is 10 nm to 40 nm. That is, the thickness of the electron transport layer 4 can be 10 nm, 20 nm, 30 nm or 40 nm. When its thickness is higher than 40 nm, parasitic absorption is severe, resulting in a decrease in device current. When its thickness is lower than 10 nm, the conductivity is poor, the electron carrier transport capacity is insufficient, and the overall device performance deteriorates.
[0043] In some embodiments of this invention, the perovskite light-absorbing layer 3 includes a perovskite layer 31 and a perovskite modification layer 32, with the perovskite modification layer 32 disposed between the perovskite layer 31 and the electron transport layer 4. It is understood that the surface of perovskite materials often contains defect states (such as dangling bonds, impurities, etc.). These defects can act as nonradiative recombination centers, leading to recombination losses of electrons and holes, reducing the open-circuit voltage and fill factor of the device. The perovskite modification layer 32, disposed between the perovskite layer 31 and the electron transport layer 4, can effectively passivate these surface defects, reduce nonradiative recombination, and improve the overall performance of the device. Furthermore, the perovskite modification layer 32 treatment can also help perovskite crystals grow better, forming larger grain sizes and reducing the number of grain boundaries. Larger grains and fewer grain boundaries facilitate carrier transport, reduce carrier scattering and recombination at grain boundaries, thereby improving charge collection efficiency.
[0044] In some embodiments of this invention, the thickness of the perovskite modification layer 32 is 1 nm to 10 nm. That is, the thickness of the perovskite modification layer 32 can be 1 nm, 5 nm, or 10 nm. When its thickness is higher than 10 nm, the excess groups will hinder carrier transport, affecting device current and fill factor. When its thickness is lower than 1 nm, there are not enough groups to passivate defects, which will affect device voltage and fill factor.
[0045] In some embodiments of this invention, the perovskite modification layer 32 includes a piperazine hydroiodide layer. Modifying the perovskite layer 31 with the aforementioned layer can adjust the phase composition of the perovskite, effectively passivate surface defects, and improve device efficiency.
[0046] In some embodiments of this invention, the perovskite solar cell 100 further includes a hole-blocking layer 5, which is disposed between the electron transport layer 4 and the second electrode. Specifically, the hole-blocking layer 5 includes a copper bath layer or a SnO2 layer, and / or the thickness of the hole-blocking layer 5 is 1–20 nm. Selecting the above-mentioned hole-blocking layer and controlling its thickness within the above range can effectively prevent holes from being transported to the second electrode layer, thereby increasing the probability of electron-hole recombination and thus improving the overall conversion efficiency of the device.
[0047] This invention also provides a method for preparing a perovskite solar cell 100, comprising the following steps: First, a first 4PADCB solution with a concentration of 0.1–0.2 mg / mL is spin-coated onto a clean transparent electrode; then, a NiOx solution with a concentration of 2.5–20 mg / mL is spin-coated onto the first 4PADCB layer 21; subsequently, a second 4PADCB solution with a concentration of 0.33–0.5 mg / mL is spin-coated onto the NiOx layer; finally, the composite substrate is annealed on a constant-temperature heating stage. Then, a perovskite layer 31, a perovskite modification layer 32, an electron transport layer 4, a hole blocking layer 5, and a metal electrode are sequentially prepared on the second 4PADCB layer 23 of the composite substrate.
[0048] It should be noted that the optimal concentration of the first 4PADCB solution is 0.1 mg / mL, the optimal concentration of the NiOx solution is 2.5 mg / mL, and the optimal concentration of the second 4PADCB solution is 0.33 mg / mL.
[0049] It is understandable that the perovskite layer 31 can be prepared by solvent spin coating, and the final perovskite layer 31 is a type of ABX3 material, where the A site can be a methylamine ion (MA). + ), formamidinium ion (FA) + ), cesium ions (Cs) + ), dimethylammonium ion (DMA) +It is a mixture of one or more of these components in any proportion. The B site is a lead ion (Pb). 2+ The X-position can be an iodide ion (I). - ), bromide ions (Br) - ), chloride ions (Cl) - ), thiocyanate (SCN) - It can be a mixture of one or more of the following in any proportion. By controlling the perovskite concentration, spin coating speed, antisolvent drop time, and annealing conditions, a perovskite layer 31 with a thickness of 300–800 nm can be obtained.
[0050] The technical solution of this utility model will be further described in detail below with reference to specific embodiments and accompanying drawings. It should be understood that the following embodiments are only used to explain this utility model and are not intended to limit this utility model.
[0051] Example 1
[0052] A perovskite solar cell 100 is prepared by the following method:
[0053] S10: Using an ITO substrate as the transparent front electrode, the ITO substrate is ultrasonically cleaned for 30 minutes in sequence with detergent, deionized water, acetone and isopropanol. After cleaning, the ITO substrate is placed in an oven to dry. After drying, it is placed in an ultraviolet ozone treatment machine for 20 minutes to remove organic residues on the surface of the ITO substrate and obtain a clean ITO substrate.
[0054] S20: Preparation of NiOx / 4PADCB hole transport layer using solution spin coating: Prepare a 2.5 mg / mL NiOx solution using deionized water and isopropanol (volume ratio 4:1), shake well before use; pipette the NiOx solution and drop it onto a clean ITO substrate, then start the spin coater to evenly cover the ITO with the NiOx solution. The spin coater parameters are: 3000 rpm, 3000 rpm / s, 30 s. Then prepare a 0.33 mg / mL 4PADCB solution using ethanol. After preparation, stir the solution for at least 12 hours and filter before use; pipette the 4PADCB solution and drop it onto the NiOx film. After spin coating, anneal at 100℃ for 10 min. The spin coater parameters are: 3000 rpm, 3000 rpm / s, 30 s.
[0055] S30: Perovskite layer prepared by solution spin coating; 31: 1.5 M Cs 0.05 FA 0.8 MA 0.15 Pb(I 0.75 Br 0.253. Perovskite precursor solution: PbCl2 with a final concentration of 4 mg / mL was added to the perovskite precursor solution. The solvents were N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (volume ratio 4:1). After preparation, the perovskite precursor solution was stirred at room temperature for 1.5 hours and then filtered before use. The perovskite precursor solution was pipetted onto the NiOx / 4PADCB hole transport layer substrate. The spin coater was started to evenly cover the perovskite precursor solution on the NiOx / 4PADCB hole transport layer substrate. During the last 10 seconds of spin coating, 150 μL of anisole (as an antisolvent to promote the crystallization of the perovskite precursor solution) was slowly added dropwise while spin coating. After spin coating, the perovskite was quickly placed on a constant temperature table and annealed at 100℃ for 20 min. After annealing, the perovskite layer 31 was formed.
[0056] The spin coater parameters were as follows: first, 3000 rpm, 1500 rpm / s, 10 s; then, 5000 rpm, 2500 rpm / s, 20 s; and finally, 8000 rpm, 800 rpm / s, 15 s. During the last 10 s of spin coating, 150 μL of anisole was added slowly and evenly dropwise.
[0057] S40: Perovskite modification layer 32 was prepared by spin coating: 1 mg formamidine hydrochloride was dissolved in 1 mL of isopropanol solvent, 1 mg phenethylamine hydroiodide was dissolved in 1 mL of isopropanol solvent, and piperazine hydroiodide was dissolved in 1 mL of isopropanol solvent. All three solutions were stirred thoroughly overnight. Then, the three solutions were mixed in a volume ratio of 9:9:4 and filtered through a 0.22 μm oil filter to obtain the perovskite modification solution. The perovskite modification solution was pipetted onto the perovskite layer 31. The spin coater was started to uniformly cover the perovskite layer 31 with the perovskite modification solution. The spin coater parameters were: 6000 rpm, 3000 rpm / s, 30 s. After spin coating, the layer was annealed at 100℃ for 5 min.
[0058] S50: C prepared by thermal evaporation method 60 Electron transport layer 4 has a thickness of 25 nm.
[0059] S60: A copper-based hole-blocking layer 5 with a thickness of 7 nm was prepared by thermal evaporation.
[0060] S70: The silver metal electrode layer 6 is prepared by thermal evaporation and has a thickness of 120 nm.
[0061] Example 2
[0062] The difference between Example 2 and Example 1 is that:
[0063] In step S20, a 4PADCB / NiOx / 4PADCB hole transport layer is prepared using a solution spin coating method: A 0.1 mg / mL first 4PADCB solution is prepared using ethanol as the solvent, stirred for at least 12 hours, and then filtered before use. The first 4PADCB solution is pipetted onto a clean ITO substrate, and the spin coater is started to uniformly cover the ITO with the first 4PADCB solution. The spin coater parameters are: 3000 rpm, 3000 rpm / s, 30 s. Then, a 2.5 mg / mL NiOx solution is prepared using deionized water and isopropanol (volume ratio 4:1), shaken thoroughly before use. The NiOx solution is pipetted onto the first 4PADCB film, and the spin coater parameters are: 3000 rpm, 3000 rpm / s, 30 s. Finally, prepare a second 4PADCB solution of 0.33 mg / mL in ethanol, stir for more than 12 hours, filter and use. Use the solution by pipetting the second 4PADCB solution onto the NiOx film. After spin coating, anneal at 100℃ for 10 min. The parameters of the spin coater are: 3000 rpm, 3000 rpm / s, 30 s.
[0064] Comparative Example 1
[0065] The difference between Comparative Example 1 and Example 1 is that:
[0066] In step S20, a 4PADCB hole transport layer is prepared using a solution spin coating method: a 0.33 mg / mL 4PADCB solution is prepared using ethanol as the solvent, stirred for more than 12 hours, and then filtered before use; the 4PADCB solution is pipetted onto a clean ITO substrate, and the spin coater is started to uniformly cover the ITO with the 4PADCB solution. After spin coating, annealing is performed at 100°C for 10 minutes. The parameters of the spin coater are: 3000 rpm, 3000 rpm / s, 30 s.
[0067] Performance testing
[0068] The photoelectric conversion efficiency, open-circuit voltage, short-circuit current, and fill factor of the perovskite solar cells prepared in Examples 1, 2, and 1 were tested, and the test results are shown in Table 1.
[0069] Table 1. Performance characterization of perovskite solar cells in Examples 1, 2, and Comparative Example 1.
[0070] Photoelectric conversion efficiency (%) Open circuit voltage (V) <![CDATA[Short-circuit current (mA·cm -2 )]]> Fill factor (%) Example 1 20.89 1.22 20.51 83.5 Example 2 21.87 1.234 20.84 85.04 Comparative Example 1 20.24 1.213 20.15 82.78
[0071] As shown in Table 1, the wide bandgap solar cell fabricated based on the 4PADCB hole transport layer in Comparative Example 1 has a photoelectric conversion efficiency of 20.24%, the wide bandgap solar cell fabricated based on the NiOx / 4PADCB hole transport layer in Example 1 has a photoelectric conversion efficiency of 20.89%, and the wide bandgap solar cell fabricated based on the 4PADCB / NiOx / 4PADCB hole transport layer in Example 2 has a photoelectric conversion efficiency of 21.89%. The improvement in photoelectric conversion efficiency is due to the improvement of open-circuit voltage, fill factor, and short-circuit current.
[0072] JV performance curves of the perovskite solar cells prepared in Examples 1, 2, and 1 were analyzed, as follows: Figure 2 As shown, the optimal photoelectric conversion efficiency of the wide-bandgap solar cell based on the 4PADCB hole transport layer in Comparative Example 1 is 20.24%. The optimal photoelectric conversion efficiency of the wide-bandgap solar cell based on the NiOx / 4PADCB hole transport layer in Example 1 is 20.89%, with the improvement in conversion efficiency attributed to improvements in open-circuit voltage, fill factor, and short-circuit current. The optimal photoelectric conversion efficiency of the wide-bandgap solar cell based on the 4PADCB / NiOx / 4PADCB hole transport layer in Example 2 is 21.87%, a 1% improvement compared to the device in Comparative Example 1, also due to improvements in open-circuit voltage, fill factor, and short-circuit current.
[0073] Maximum power point (MPPT) output curves were analyzed for the perovskite solar cells prepared in Examples 1, 2, and 1, as follows: Figure 3 As shown, the wide bandgap solar cell based on the 4PADCB hole transport layer in Comparative Example 1 retains 90% of its initial performance after 125 hours, but the device performance degrades rapidly. The wide bandgap solar cell based on the NiOx / 4PADCB hole transport layer in Example 1 retains 90% of its initial performance after 150 hours, and the device performance degrades more slowly. In contrast, the wide bandgap solar cell based on the 4PADCB / NiOx / 4PADCB hole transport layer in Example 2 retains 93.75% of its initial performance after 190 hours, exhibiting the slowest performance degradation.
[0074] Referring to Table 1, Figure 2 and Figure 3 The results show that the 4PADCB hole transport layer between the transparent front electrode layer and the NiOx layer can effectively passivate the surface defects of the transparent electrode ITO and the bottom defects of NiOx, and can also prevent NiOx from directly contacting the transparent electrode, thus solving the problem of insufficient adhesion between NiOx and the transparent electrode.
[0075] The above are merely preferred embodiments of this utility model and do not limit the patent scope of this utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the patent protection scope of this utility model.
Claims
1. A perovskite solar cell, characterized in that, It includes a first electrode layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a second electrode layer, which are stacked sequentially. The hole transport layer includes a stacked 4PADCB layer and a metal oxide hole transport layer. The 4PADCB layer includes a first 4PADCB layer and a second 4PADCB layer, and the metal oxide hole transport layer is disposed between the first 4PADCB layer and the second 4PADCB layer.
2. The perovskite solar cell as described in claim 1, characterized in that, The thickness of the first 4PADCB layer is 2 nm to 5 nm; and / or, The thickness of the second 4PADCB layer is 5 nm to 10 nm.
3. The perovskite solar cell according to claim 1, characterized in that, The metal oxide hole transport layer includes a NiO layer, a NiO2 layer, a CuO2 layer, or a CuO layer; and / or, The thickness of the metal oxide hole transport layer is 5 nm to 20 nm.
4. The perovskite solar cell according to claim 1, characterized in that, The first electrode layer includes a transparent front electrode layer, and the second electrode layer includes a metal electrode layer.
5. The perovskite solar cell as described in claim 4, characterized in that, The thickness of the first electrode layer is 100 nm to 300 nm; and / or, The thickness of the second electrode layer is 50 nm to 200 nm; and / or, The thickness of the electron transport layer is 10 nm to 40 nm.
6. The perovskite solar cell according to claim 1, characterized in that, The perovskite light-absorbing layer includes a perovskite layer and a perovskite modification layer, wherein the perovskite modification layer is disposed between the perovskite layer and the electron transport layer.
7. The perovskite solar cell according to claim 6, characterized in that, The thickness of the perovskite modification layer is 1 nm to 10 nm; and / or, The perovskite modification layer includes a piperazine hydroiodide layer.
8. The perovskite solar cell according to claim 1, characterized in that, The perovskite solar cell further includes a hole blocking layer disposed between the electron transport layer and the second electrode layer.
9. The perovskite solar cell as described in claim 8, characterized in that, The hole-blocking layer includes a copper bath layer or a SnO2 layer; and / or, The thickness of the hole blocking layer is 1 nm to 20 nm.