A power module
By employing a double-sided heat dissipation structure in the power module, and utilizing a combination of upper and lower metal layers and insulating layers, the problem of temperature rise caused by single-sided heat dissipation is solved, achieving a more efficient heat dissipation effect and extending the module's service life.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHANGHAI LIONSGATE SEMICON CO LTD
- Filing Date
- 2025-07-09
- Publication Date
- 2026-07-21
AI Technical Summary
The current power module uses a single-sided heat dissipation method, which leads to increased temperature and affects performance and lifespan.
A double-sided heat dissipation structure is adopted, which conducts heat through the upper and lower metal layers respectively. Combined with the combination of insulating layer and metal material, the chip achieves double-sided heat dissipation.
It improves heat dissipation efficiency, reduces temperature, and extends the lifespan of the power module.
Smart Images
Figure CN224538723U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of circuit heat dissipation technology, and more particularly to power modules. Background Technology
[0002] The chips in the power module generate heat, causing the temperature to rise. Excessive temperature can degrade the power module's performance and shorten its lifespan; therefore, the power module requires heat dissipation.
[0003] like Figure 1 The conventional heat dissipation method is single-sided heat dissipation, which dissipates heat from the insulating ceramic plate below, and the signal source of the chip is connected to the outside by the metal wire above.
[0004] How to improve the heat dissipation of the aforementioned power module is the technical problem that this application aims to solve. Utility Model Content
[0005] The purpose of this application is to provide a power module to improve the heat dissipation effect of power modules in the prior art.
[0006] The power module includes a first metal layer, a first insulating and heat dissipation layer, a lower first metal layer, a chip, an upper metal layer, a second insulating layer, and a top metal layer; The first metal layer is connected to the lower surface of the first insulating heat dissipation layer; The lower first metal layer is disposed on the upper surface of the first insulating heat dissipation layer, and the upper surface of the lower first metal layer is connected to the lower surface of the chip; The upper surface of the chip is connected to the upper metal layer, which is used for the circuit connection of the chip; The upper surface of the upper metal layer is connected to the lower surface of the second insulating layer; The upper surface of the second insulating layer is connected to the top metal layer.
[0007] Optionally, the power module further includes an upper welding material; The upper surface of the chip is connected to the upper metal layer through the upper welding material.
[0008] The upper surface of the chip is connected to the upper metal layer by welding. The advantage of this embodiment is that it makes the connection between the chip and the upper metal layer more stable.
[0009] Optionally, the power module further includes a lower first welding material; The upper surface of the lower first metal layer is connected to the lower surface of the chip via the lower first welding material.
[0010] The lower surface of the chip is connected to the lower first metal layer by welding. The advantage of this embodiment is that it makes the connection between the chip and the lower first metal layer more stable.
[0011] Optionally, the power module further includes a lower second welding material and a lower second metal; The lower second metal is disposed on the upper surface of the first insulating heat dissipation layer, and the lower second metal is connected to the upper metal layer through the lower second welding material.
[0012] The lower second metal layer and the upper metal layer form a corresponding relationship, and the lower second metal layer has a supporting function.
[0013] Optionally, the lower second metal layer is connected to the periphery of the upper metal layer via the lower second welding material; The outer periphery of the upper metal layer protrudes downwards, and the outer periphery of the upper metal layer forms an upward concave space, in which the chip is embedded.
[0014] The outer periphery of the upper metal layer allows the circuit to be led out, while also forming the mounting space for the chip.
[0015] Optionally, the orthographic projection of the lower second welding material onto the first insulating heat dissipation layer coincides with the orthographic projection of the outer periphery of the upper metal layer onto the first insulating heat dissipation layer.
[0016] The lower second welding material and the outer periphery of the upper metal layer are positioned correspondingly, and the lower second welding material and the outer periphery of the upper metal layer are connected to each other, thus jointly providing support.
[0017] Optionally, the power module further includes an insulating encapsulation material located in the space surrounding the chip and the upper metal layer.
[0018] The insulating encapsulation material ensures that the internal components, such as the chip, are isolated from each other, preventing accidental connection during movement.
[0019] Optionally, the insulating encapsulation material is epoxy resin or insulating adhesive.
[0020] The advantage of using epoxy resin or insulating adhesive as the insulating encapsulation material is that epoxy resin and insulating adhesive are readily available and their costs are controllable.
[0021] Optionally, the first insulating heat dissipation layer is ceramic; the advantage of using ceramic as the first insulating heat dissipation layer is that ceramic has both good thermal conductivity and insulation properties.
[0022] Optionally, the second insulating layer comprises a polymer material or ceramic; the advantage of using ceramic as the second insulating layer is that ceramic has both good thermal conductivity and insulation properties. Polymer materials also have good insulation properties, and an appropriate thickness can be selected to achieve good heat dissipation.
[0023] Optionally, the top metal layer includes copper or aluminum; the advantage of using copper or aluminum as the top metal layer is that copper and aluminum have good thermal conductivity, which is conducive to heat dissipation from the top, and they are commonly used materials in circuit technology, easy to obtain, and cost controllable.
[0024] Optionally, the upper metal layer is copper; the advantage of using copper as the upper metal layer is that copper has good thermal conductivity, which is conducive to heat dissipation from the top, and copper has good electrical conductivity, which is suitable for use as a circuit connection. It is a commonly used material in circuit technology, easy to obtain, and cost controllable.
[0025] Optionally, the first metal layer is copper. The advantage of using copper as the first metal layer is that copper has good thermal conductivity, which is conducive to heat dissipation from the bottom down. It is also a commonly used material in circuit technology, which is easy to obtain and has controllable cost.
[0026] Optionally, the lower first metal is copper; the advantage of choosing copper as the lower first metal is that copper has good thermal conductivity, which is conducive to heat dissipation from below, and copper has good electrical conductivity, which is suitable for use as a circuit connection. It is a commonly used material in circuit technology, easy to obtain, and cost controllable.
[0027] Optionally, the lower second metal is copper; the advantage of choosing copper as the lower second metal is that copper has good thermal conductivity, which is conducive to heat dissipation from below, and copper has good electrical conductivity, which is suitable for use as a circuit connection. It is a commonly used material in circuit technology, easy to obtain, and cost controllable.
[0028] Optionally, the upper metal layer includes a first region and a second region; the area of the first region is larger than that of the second region; when the power module is working, the current in the first region is greater than that in the second region.
[0029] The beneficial effects of this implementation are that it distinguishes between low-current and high-current regions, arranges a good heat dissipation structure for high-current regions, and optimizes the utilization of materials and space.
[0030] Compared with the prior art, this application has the following advantages: The chip can dissipate heat upwards, with heat passing through the upper metal layer and the second insulating layer to reach the top metal layer for heat dissipation; the chip can also dissipate heat downwards, with heat passing through the lower first metal layer and the first insulating heat dissipation layer to reach the first metal layer for heat dissipation; therefore, the power module of this application embodiment has the effect of double-sided heat dissipation, which greatly improves the heat dissipation efficiency compared to the traditional single-sided heat dissipation power module. Attached Figure Description
[0031] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.
[0032] Figure 1 This is a schematic diagram of a power module with unidirectional heat dissipation in the prior art; Figure 2 A schematic diagram of a bidirectional heat dissipation power module provided in an embodiment of this application; Figure 3 A schematic diagram showing that the upper surface of a chip 1 is connected to an upper metal layer 9 by welding, according to an embodiment of this application; Figure 4 A schematic diagram showing that the upper surface of a lower first metal 8 is connected to the lower surface of a chip 1 by welding, as provided in an embodiment of this application; Figure 5 A schematic diagram showing the alignment of the lower second metal layer and the outer periphery of the upper metal layer 9, provided for an embodiment of this application; Figure 6 A schematic diagram showing an upper metal layer 9 surrounded by an insulating material filling a space provided in an embodiment of this application; Figure 7 A schematic diagram illustrating an embodiment of this application in which an insulating encapsulation material is disposed on the outer periphery of the upper metal layer 9; Figure 8 This is a schematic diagram of an upper metal layer including a first region 16 and a second region 17, provided in an embodiment of this application.
[0033] Explanation of reference numerals in the attached figures: 1 chip 2 Welding materials 3. Metallic materials 4 Insulating ceramics 5 metal wires 6 First metal layer 7 First Insulating Heat Dissipation Layer 8 Lower layer first metal 9. Upper metal layer 10 Second Insulation Layer 11 Top metal layer 12 Upper layer welding materials 13 Lower layer first welding material 14 Lower layer second welding material 15 Lower layer second metal 16 First District 17 Second District Detailed Implementation To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. The described embodiments are only some embodiments of this application, not all embodiments. The components of the embodiments of this application described in the accompanying drawings can generally be arranged and designed in various different configurations.
[0034] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0035] In the description of this application, it should be noted that: Relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations; "Connection" should be interpreted broadly. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium.
[0036] like Figure 2 The power module in this embodiment includes a first metal layer 6, a first insulating heat dissipation layer 7, a lower first metal layer 8, a chip 1, an upper metal layer 9, a second insulating layer 10, and a top metal layer 11. The various parts have the following positional relationship: The first metal layer 6 is connected to the lower surface of the first insulating heat dissipation layer 7; The upper surface of the first insulating heat dissipation layer 7 is provided with a lower first metal layer 8. The upper surface of the lower first metal layer 8 is connected to the lower surface of the chip 1. The lower first metal layer can be used for chip grounding or for connecting the negative terminal of the chip power supply. The upper surface of chip 1 is connected to the upper metal layer 9, which is used for the circuit connection of chip 1, such as the positive power supply and signal. The upper surface of the upper metal layer 9 is connected to the lower surface of the second insulating layer 10; The upper surface of the second insulating layer 10 is connected to the top metal layer 11.
[0037] The first insulating heat dissipation layer 7 has a heat dissipation function and can be made of ceramic material. The advantage of using ceramic material is that ceramic has good thermal conductivity, and ceramic is a mature circuit board with controllable cost. The lower first metal 8 can be copper, and the first metal layer 6 can also be copper.
[0038] The second insulating layer 10 may comprise a polymer material or a ceramic material. The upper metal layer 9 may be made of copper. The thickness of the second insulating layer 10 does not need to be too large, thus achieving good thermal conductivity. The top metal layer 11 may comprise copper or aluminum, providing good heat dissipation.
[0039] like Figure 2 The two arrows in the image indicate the direction of heat conduction: Chip 1 can dissipate heat upwards, and the heat is dissipated through the upper metal layer 9 and the second insulating layer 10 to the top metal layer 11. Chip 1 can also dissipate heat downwards. The heat is dissipated through the lower first metal 8, the first insulating heat dissipation layer 7, and the first metal layer 6. Therefore, the power module of this embodiment has the effect of double-sided heat dissipation, which greatly improves the heat dissipation efficiency compared with the traditional single-sided heat dissipation power module.
[0040] The outer periphery of the upper metal layer 9 protrudes downwards, forming an upward-facing concave space in which the chip 1 is embedded. The outer periphery of the upper metal layer 9 provides support.
[0041] like Figure 3 The power module may also include an upper welding material 12. The upper surface of the chip 1 is connected to the upper metal layer 9 through a welding process, which can make the connection between the chip 1 and the upper metal layer 9 more stable.
[0042] like Figure 4 The power module may also include a lower first welding material 13. The upper surface of the lower first metal 8 is connected to the lower surface of the chip 1 by welding, which can make the connection between the chip 1 and the lower first metal 8 more stable.
[0043] like Figure 5 The power module may also include a lower second welding material 14 and a lower second metal 15; the lower second metal 15 is disposed on the upper surface of the first insulating heat dissipation layer 7, and the lower second metal 15 is connected to the upper metal layer 9 through the lower second welding material 14.
[0044] The lower second metal layer 15 serves as a circuit connection, a signal input / output interface for chip 1, and a heat dissipation layer. The material of the lower second metal layer 15 can be copper.
[0045] The lower second metal 15 is connected to the upper metal layer 9 by welding, which makes the connection between the lower second metal 15 and the upper metal layer 9 more stable.
[0046] like Figure 5 The lower second metal 15 is connected to the periphery of the upper metal layer 9 via the lower second welding material 14; the periphery of the upper metal layer 9 protrudes downward, forming an upward concave space, in which the chip 1 is embedded. This concave space can be formed by etching.
[0047] The periphery of the upper metal layer 9 forms the mounting space for the chip, and the periphery of the upper metal layer 9 also provides support.
[0048] like Figure 5 The lower second metal 15 can be aligned with the outer periphery of the upper metal layer 9. The projection of the lower second welding material 14 onto the first insulating heat dissipation layer 7 coincides with the projection of the outer periphery of the upper metal layer 9 onto the first insulating heat dissipation layer 7. At this time, the lower second metal 15 can form an integral support with the outer periphery of the upper metal layer 9, which is more stable.
[0049] The space enclosed by the outer perimeter of the upper metal layer 9 can be filled with insulating material, such as... Figure 6 The area filled with diagonal lines is filled with insulating encapsulation material to better ensure the insulation performance between different circuit connection points of the chip and prevent short circuits.
[0050] Epoxy resin or insulating adhesive can be selected as the insulating encapsulation material for filling the space.
[0051] Epoxy resin undergoes a cross-linking reaction under the action of a curing agent, forming a hard solid material. After curing, epoxy resin exhibits high strength, high hardness, and good toughness. Its tensile and compressive strengths are both high, enabling it to withstand significant mechanical loads. Therefore, filling the aforementioned spaces with epoxy resin can provide support and fixation for the chip, ensuring its stable position during subsequent use and preventing displacement that could lead to short circuits or other malfunctions.
[0052] An insulating encapsulation material can also be provided on the outer periphery of the upper metal layer 9, such as... Figure 7 The area with diagonal lines on the outer periphery of the upper metal layer 9 only exposes the external pins, thus protecting the internal structure and providing excellent moisture-proof, dust-proof, and shock-proof performance. This prevents interference and damage to the electronic equipment from the external environment.
[0053] The upper metal layer 9 can also be divided into different regions. Figure 8 One implementation is shown. The top view is a top view. Yellow represents metal, purple represents chip 1, green represents insulating encapsulation material, and blue represents the second insulating layer. The portion below the lower second metal 15 is omitted in the top view.
[0054] like Figure 8 In the top view, the upper metal layer 9 can include a first region 16 on the left and a second region 17 on the right. The area of the first region 16 is larger than that of the second region 17. When the power module is working, the current in the first region 16 is greater than that in the second region 17. This distinguishes between low-current and high-current regions, and allows for a well-designed heat dissipation structure for the high-current regions, optimizing the utilization of materials and space.
[0055] Based on the above embodiments, this application also provides an electronic device, which includes any of the power modules described above.
[0056] The apparatus and system embodiments described above are merely illustrative. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement these embodiments without any creative effort.
[0057] The above are merely preferred embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A power module, characterized in that, It includes a first metal layer, a first insulating and heat dissipation layer, a lower first metal layer, a chip, an upper metal layer, a second insulating layer, and a top metal layer; The first metal layer is connected to the lower surface of the first insulating heat dissipation layer; The lower first metal layer is disposed on the upper surface of the first insulating heat dissipation layer, and the upper surface of the lower first metal layer is connected to the lower surface of the chip; The upper surface of the chip is connected to the upper metal layer, which is used for the circuit connection of the chip; The upper surface of the upper metal layer is connected to the lower surface of the second insulating layer; The upper surface of the second insulating layer is connected to the top metal layer.
2. The power module as described in claim 1, characterized in that, The power module also includes an upper welding material; The upper surface of the chip is connected to the upper metal layer through the upper welding material.
3. The power module as described in claim 1, characterized in that, The power module also includes a lower first welding material; The upper surface of the lower first metal layer is connected to the lower surface of the chip via the lower first welding material.
4. The power module as described in claim 3, characterized in that, The power module also includes a lower second welding material and a lower second metal; The lower second metal is disposed on the upper surface of the first insulating heat dissipation layer, and the lower second metal is connected to the upper metal layer through the lower second welding material.
5. The power module as described in claim 4, characterized in that, The lower second metal layer is connected to the periphery of the upper metal layer via the lower second welding material; The outer periphery of the upper metal layer protrudes downwards, and the outer periphery of the upper metal layer forms an upward concave space, in which the chip is embedded.
6. The power module as described in claim 5, characterized in that, The orthographic projection of the lower second welding material onto the first insulating and heat-dissipating layer coincides with the orthographic projection of the outer periphery of the upper metal layer onto the first insulating and heat-dissipating layer.
7. The power module as described in claim 5, characterized in that, The power module also includes an insulating encapsulation material that fills the space between the chip and the periphery of the upper metal layer.
8. The power module as described in claim 7, characterized in that, The insulating encapsulation material is epoxy resin or insulating adhesive.
9. The power module as described in claim 5, characterized in that, The first insulating heat dissipation layer is ceramic; The second insulating layer comprises a polymer material or ceramic; The top metal layer includes copper or aluminum; The upper metal layer is copper; The first metal layer is copper; The lower first metal is copper; The second metal in the lower layer is copper.
10. The power module as described in claim 1, characterized in that, The upper metal layer includes a first region and a second region; The area of the first region is larger than that of the second region; When the power module is working, the current in the first region is greater than the current in the second region.