Substrate cleaning apparatus and substrate processing system

Abstract

The utility model provides a kind of substrate cleaning device and substrate processing system, substrate cleaning device includes processing chamber, substrate holding part, liquid medicine supply unit one, liquid medicine supply unit two, flushing liquid supply unit, protection drainage part and control part, liquid medicine supply unit one includes first nozzle and second nozzle, liquid medicine supply unit two includes third nozzle and fourth nozzle, flushing liquid supply unit includes fifth nozzle, protection drainage part includes protective baffle and the collection tank corresponding with protective baffle, control part is used to control the supply, rotation and lift of liquid medicine of first nozzle, second nozzle, third nozzle and fourth nozzle, control part is also used to control the clamping and rotation of substrate holding part, and the lift switching of the protective baffle of control protection drainage part, the substrate cleaning device can improve the removal performance of substrate surface particle and pollutant, improve the performance and yield of semiconductor device.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, specifically to a substrate cleaning device and substrate processing system. Background Technology

[0002] With the continuous development of semiconductor technology, the requirements for substrate cleaning processes are becoming increasingly stringent. During semiconductor manufacturing, particles and contaminants on the substrate surface can severely affect device performance and yield; therefore, efficient substrate cleaning equipment is crucial for semiconductor manufacturing.

[0003] Current substrate cleaning processes require the use of multiple processing solutions to treat substrates such as semiconductor wafers. For example, in methods for processing monolithic substrates, after treating the upper surface of the substrate with multiple processing solutions, a rinsing solution is used to clean the upper surface, followed by a high-speed rotation drying process to dry the upper surface, thus completing the substrate cleaning process. Existing substrate cleaning apparatus and methods for removing particles and contaminants adhering to substrates such as silicon wafers and compound semiconductor wafers have room for further improvement. Utility Model Content

[0004] The purpose of this invention is to provide a substrate cleaning device and substrate processing system to improve the removal performance of particles and contaminants on the substrate surface, thereby improving the performance and yield of semiconductor devices.

[0005] The technical solution adopted by this utility model to solve its technical problem is as follows: The first aspect of this utility model provides a substrate cleaning device, including a processing chamber, a substrate holding part, a first chemical supply part, a second chemical supply part, a rinsing liquid supply part, a protective draining part, and a control part. The substrate holding part is disposed inside the processing chamber, the first drug supply part includes a first nozzle and a second nozzle, the second drug supply part includes a third nozzle and a fourth nozzle, and the rinsing liquid supply part includes a fifth nozzle. The protective drainage section includes a protective baffle and a collection tank corresponding to the protective baffle. The protective baffle can be raised and lowered so that the collection tank collects the cleaning liquid thrown out from the substrate. The control unit is used to control the supply of liquid medicine to the first nozzle, second nozzle, third nozzle, fourth nozzle and fifth nozzle, as well as the rotation and lifting of the first nozzle, second nozzle, third nozzle and fourth nozzle. The control unit is also used to control the clamping and rotation of the substrate holding part, and to control the lifting and lowering switching of the protective baffle of the protective drain part.

[0006] Furthermore, the first nozzle and the second nozzle are used to supply acidic liquid, and the third nozzle and the fourth nozzle are used to supply alkaline liquid. The first nozzle and the second nozzle are disposed on the first rocker arm, and the third nozzle and the fourth nozzle are disposed on the second rocker arm.

[0007] Furthermore, the protective baffle includes a first baffle and a second baffle. The first baffle corresponds to a first collection tank, and the second baffle corresponds to a second collection tank. The first collection tank is connected to a plurality of drain boxes, and the second collection tank is connected to at least one drain box. Each drain box is connected to the corresponding collection tank through a pipe, and each pipe is equipped with a switch valve.

[0008] Furthermore, the number of drainage boxes connected to the first collection tank is greater than or equal to four.

[0009] Furthermore, the first medicine supply unit, the second medicine supply unit, and the rinsing fluid supply unit all include medicine pipes connected to nozzles, and the medicine pipes are equipped with switching valves. The switching valves of the first medicine supply unit, the second medicine supply unit, and the rinsing fluid supply unit are all electrically connected to the control unit.

[0010] Furthermore, the flushing fluid supply unit is used to supply a mixture of carbon dioxide and deionized water. The flushing fluid supply unit includes a medicine pipe connected to a nozzle, and a switch valve is provided on the medicine pipe. The switch valve of the flushing fluid supply unit is electrically connected to the control unit.

[0011] Furthermore, the cleaning device also includes an air regulating structure, which is used to blow air from the upper part of the processing chamber into the processing chamber and discharge the gas flowing through the protective drain section.

[0012] Furthermore, the air regulating structure includes an air supply unit and an exhaust unit, with the air supply unit located at the top of the processing chamber and the exhaust unit located at the bottom of the processing chamber.

[0013] The second aspect of this utility model provides a substrate processing system, including a substrate cleaning device, wherein the substrate cleaning device is the substrate cleaning device described above.

[0014] The substrate cleaning apparatus of this invention includes a processing chamber, a substrate holding section, a first chemical supply section, a second chemical supply section, a rinsing fluid supply section, a protective drain section, and a control section. The substrate holding section is disposed inside the processing chamber. The first chemical supply section includes a first nozzle and a second nozzle, the second chemical supply section includes a third nozzle and a fourth nozzle, and the rinsing fluid supply section includes a fifth nozzle. The protective drain section includes a protective baffle and a collection tank corresponding to the protective baffle. The protective baffle can be raised and lowered so that the collection tank collects the cleaning fluid thrown out from the substrate. The control section is used to control the supply of cleaning fluid to the first, second, third, fourth, and fifth nozzles, as well as the rotation and raising and lowering of the first, second, third, and fourth nozzles. The control section is also used to control the clamping and rotation of the substrate holding section, and to control the raising and lowering switching of the protective baffle of the protective drain section. This substrate cleaning apparatus can improve the removal performance of particles and contaminants on the substrate surface, and improve the performance and yield of semiconductor devices. Attached Figure Description

[0015] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 A schematic cross-sectional view of the substrate cleaning apparatus provided in an embodiment of this utility model; Figure 2 A schematic diagram showing the lifting positions of different heights of the protective baffles in the protective drain section of the substrate cleaning device provided in this embodiment of the utility model. Figure 3 A top view of the scanning movement trajectory of the liquid nozzle in the substrate cleaning device provided in this embodiment of the utility model; Figure 4 An illustrative cross-sectional view provided for illustrating the substrate cleaning method in an embodiment of this utility model; Figure 5 An illustrative cross-sectional view provided for illustrating the substrate cleaning method in an embodiment of this utility model; Figure 6 An illustrative cross-sectional view provided for illustrating the substrate cleaning method in an embodiment of this utility model; Figure 7 An illustrative cross-sectional view provided for illustrating the substrate cleaning method in an embodiment of this utility model; Figure 8 An illustrative cross-sectional view provided for illustrating the substrate cleaning method in an embodiment of this utility model; Figure 9This is an illustrative cross-sectional view provided for illustrating a substrate cleaning method in an embodiment of the present invention.

[0017] The following are the labeling elements in the figure: 1-Processing chamber; 2-Substrate holding section; 3-Medication supply section one; 4-Medication supply section two; 5-Rinsing solution supply section; 6-Protective drainage section; 7-Control section; 8-Gas regulation structure; 21-Rotating base; 22-Chuck clamping part; 23-Rotary motor; 31-First nozzle; 32-Second nozzle; 33-First rocker arm; 41-Third nozzle; 42-Fourth nozzle; 43-Second rocker arm; 51-Fifth nozzle; 61-Protective baffle; 62-Collection tank; 311-First liquid pipe; 312-First liquid switch valve; 321-Second liquid pipe; 322-Second liquid switch valve; 411-Third liquid pipe; 412-Third liquid switch valve; 421-Fourth liquid pipe; 422-Fourth liquid switch valve; 511-Fifth liquid pipe; 512-Fifth liquid switch valve; 611-First baffle; 612-Second baffle; 621-First collection tank; 622-Second collection tank; (V1, V2, V3, V4, V5) - Switch valves; (D1, D2, D3, D4, D5) - Drainage boxes; W - Base plate; (M1, M2) - Lifting motors; (R1, R2, R3) - Rotating shafts; (Y1, Y2) - Up and down directions; (H2, H4) - Height of the first baffle; (H1, H3) - Height of the second baffle; (NP1, NP2, NP3, NP4) - Origin position; (P1, P2) - Edge position; CP - Center point of the base plate; DHF - Hydrofluoric acid solution; SPM - Mixture of hydrogen peroxide and water; DIW - Deionized water; SC1 - Mixture of ammonium hydroxide, hydrogen peroxide, and water; CO2W - Mixture of carbon dioxide and deionized water. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0019] In the description of this utility model, it should be understood that the terms "comprising" and "having" as used herein, and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.

[0020] It should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", and "outer" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0021] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. It should be understood that the term "and / or" as used herein is merely a description of the relationship between related objects, indicating that three relationships may exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. In the description of this utility model, unless otherwise stated, "multiple" means two or more.

[0022] With the continuous development of semiconductor technology, the requirements for substrate cleaning processes are becoming increasingly stringent. During semiconductor manufacturing, particles and contaminants on the substrate surface can severely affect device performance and yield; therefore, efficient substrate cleaning equipment is crucial for semiconductor manufacturing.

[0023] Existing substrate cleaning devices generally suffer from the following problems: when multiple cleaning solutions are used continuously, it is difficult to effectively prevent cross-contamination between different cleaning solutions; the lack of an efficient drainage and sorting collection system leads to difficulties in waste liquid treatment; and the nozzle layout is not reasonable enough, affecting the cleaning effect. Therefore, there is an urgent need for an improved substrate cleaning device.

[0024] The substrate cleaning device and substrate processing system provided by this utility model will be described in detail below with reference to specific embodiments.

[0025] Figure 1 For a schematic cross-sectional view of the substrate cleaning apparatus provided in an embodiment of this utility model, please refer to [link / reference]. Figure 1The first aspect of this utility model provides a substrate cleaning apparatus, including a processing chamber 1, a substrate holding part 2, a first chemical supply part 3, a second chemical supply part 4, a rinsing liquid supply part 5, a protective draining part 6, and a control part 7. The substrate holding part 2 is disposed inside the processing chamber 1, the first drug supply part 3 includes a first nozzle 31 and a second nozzle 32, the second drug supply part 4 includes a third nozzle 41 and a fourth nozzle 42, and the rinsing liquid supply part 5 includes a fifth nozzle 51. The protective drainage section 6 includes a protective baffle 61 and a collection tank 62 corresponding to the protective baffle 61. The protective baffle 61 can be raised and lowered so that the collection tank 62 collects the cleaning liquid thrown out from the substrate W. The control unit 7 is used to control the supply of medicine to the first nozzle 31, the second nozzle 32, the third nozzle 41, the fourth nozzle 42 and the fifth nozzle 51, as well as the rotation and lifting of the first nozzle 31, the second nozzle 32, the third nozzle 41 and the fourth nozzle 42. The control unit 7 is also used to control the clamping and rotation of the substrate W holding part, and to control the lifting and lowering switching of the protective baffle 61 of the protective drain part 6.

[0026] In this embodiment, the processing chamber 1 is used to house the substrate holding part 2, the first nozzle 31 and the second nozzle 32 of the liquid supply part 1 3, the third nozzle 41 and the fourth nozzle 42 of the liquid supply part 2 4, and the fifth nozzle 51 of the rinsing liquid supply part 5. The processing chamber 1 is generally made of corrosion-resistant material and has good sealing performance. A closed space is formed between the cover and the chamber body by an elastic sealing component (such as an O-ring) to prevent the cleaning liquid from leaking or external impurities from entering. In this embodiment, the volume of the processing chamber 1 is not particularly limited.

[0027] like Figure 1 As shown, the substrate holding unit 2 holds a substrate W in a horizontal position within the processing chamber 1. The substrate holding unit 2 is controlled by the control unit 7 to clamp and rotate. The substrate holding unit 2 has a rotating base 21 and multiple chuck clamping units 22. The rotating base 21 is disc-shaped, and its lower end is fixedly connected to the rotation shaft 231 of the rotary motor 23, causing the substrate W to rotate around a vertical rotation axis R1 passing through the center of the substrate W. The rotating base 21 supports the multiple chuck clamping units 22 in a horizontal position. The multiple chuck clamping units 22 are installed at equal intervals on the edge of the rotating base 21, clamping the edge of the substrate W.

[0028] like Figure 1As shown, the chemical supply unit 3 includes a first nozzle 31, a first chemical pipe 311, and a first chemical switch valve 312. The first chemical pipe 311 is connected to the first nozzle 31, and the first chemical switch valve 312 is disposed on the first chemical pipe 311. When the first chemical switch valve 312 is open, the first chemical pipe 311 supplies chemical solution to the first nozzle 31. When the first chemical switch valve 312 is closed, the first chemical pipe 311 stops supplying chemical solution to the first nozzle 31. In this embodiment, the first nozzle 31 supplies a mixture of sulfuric acid, hydrogen peroxide, and water (SPM) to the substrate W. SPM treatment solution is often used to remove organic contaminants on the surface of the substrate. Because SPM treatment solution has a strong oxidizing ability, it can remove organic contaminants and some metallic contaminants. The solution supply unit 3 further includes a second nozzle 32, a second solution pipe 321, and a second solution switching valve 322. The second solution pipe 321 is connected to the second nozzle 32, and the second solution switching valve 322 is disposed on the second solution pipe 321. When the second solution switching valve 322 is open, it supplies solution to the second nozzle 32. When the second solution switching valve 322 is closed, the second solution pipe 321 stops supplying solution to the second nozzle 32. In this embodiment, the second nozzle 32 supplies hydrofluoric acid solution (DHF) to the substrate W. DHF is a solution made by diluting hydrofluoric acid with water. DHF reacts with the oxide layer on the surface of the silicon wafer to generate a water-soluble substance, thereby achieving the purpose of removing the oxide layer and obtaining a clean surface. In this embodiment, the control unit 7 controls the opening and closing of the first solution switching valve 312 and the second solution switching valve 322. The first nozzle 31 and the second nozzle 32 can move in the vertical direction Y1 within the processing chamber 1 and can also rotate along the rotation axis R2.

[0029] like Figure 1As shown, the second chemical supply unit 4 includes a third nozzle 41, a third chemical supply pipe 411, and a third chemical supply switch valve 412. The third chemical supply pipe 411 is connected to the third nozzle 41, and the third chemical supply switch valve 412 is disposed on the third chemical supply pipe 411. When the third chemical supply switch valve 412 is open, the third chemical supply pipe 411 supplies chemical solution to the third nozzle 41; when the third chemical supply switch valve 412 is closed, the third chemical supply pipe 411 stops supplying chemical solution to the third nozzle 41. In this embodiment, the third nozzle 41 supplies deionized water (DIW) to the substrate W. The DIW removes residual chemical solution after the substrate W has been sprayed with the chemical solution for cleaning. The second chemical supply unit 4 also includes a fourth nozzle 42, a fourth chemical supply pipe 421, and a fourth chemical supply switch valve 422. The fourth chemical supply pipe 421 is connected to the fourth nozzle 42, and the fourth chemical supply switch valve 422 is disposed on the fourth chemical supply pipe 421. When the fourth chemical supply switch valve 422 is open, the fourth chemical supply pipe 421 supplies chemical solution to the fourth nozzle 42; when the fourth chemical supply switch valve 422 is closed, the fourth chemical supply pipe 421 stops supplying chemical solution to the fourth nozzle 42. In this embodiment, the fourth nozzle 42 supplies a mixture of ammonium hydroxide, hydrogen peroxide, and water (SC1) to the substrate W. The SC1 treatment solution is an alkaline solution, mainly used to remove particles, organic matter, and some metal contaminants from the surface of the substrate W. In this embodiment, the control unit 7 controls the opening and closing of the third chemical supply switch valve 412 and the fourth chemical supply switch valve 422. The third nozzle 41 and the fourth nozzle 42 can move in the vertical direction Y2 within the processing chamber 1 and can also rotate along the rotation axis R3.

[0030] In this embodiment, the first nozzle 31 and the second nozzle 32 are used to supply acidic solutions, and the third nozzle 41 and the fourth nozzle 42 are used to supply alkaline solutions. The first nozzle 31 and the second nozzle 32 are mounted on the first rocker arm 33, and the third nozzle 41 and the fourth nozzle 42 are mounted on the second rocker arm 43. By mounting the first nozzle 31 and the second nozzle 32 for supplying acidic solutions on the first rocker arm 33, and the third nozzle 41 and the fourth nozzle 42 for supplying alkaline solutions on the second rocker arm 43, this embodiment avoids the situation where acidic solutions from the solution supply section 1 3 splash onto the nozzles of the solution supply section 2 4 during solution spraying, thus preventing acid-base neutralization reactions that generate impurities and contaminate the nozzles. This embodiment also improves the cleanliness of the environment within the processing chamber 1 to a certain extent by mounting the first nozzle 31 and the second nozzle 32 for supplying acidic solutions on the first rocker arm 33 and the third nozzle 41 and the fourth nozzle 42 for supplying alkaline solutions on the second rocker arm 43.

[0031] Furthermore, the first rocker arm 33 includes a first end for setting a nozzle and a second end away from the nozzle. The second ends of the first rocker arm 33 and the second ends of the second rocker arm 43 are located on the same side of the substrate holding portion 2. A pipeline interface is provided on the processing chamber 4, and the second ends of the first rocker arm 33 and the second ends of the second rocker arm 43 are both close to the pipeline interface. In this embodiment, the first liquid pipe 311, the second liquid pipe 321, the third liquid pipe 411, and the fourth liquid pipe 421 all enter the processing chamber 1 from the pipeline interface. In this embodiment, the second ends of the first rocker arm 33 and the second ends of the second rocker arm 43 are both close to the pipeline interface of the processing chamber 1, which can minimize the length of the liquid dispensing pipeline.

[0032] like Figure 1 As shown, the rinsing fluid supply unit includes a fifth nozzle 51, a fifth chemical solution pipe 511, and a fifth chemical solution switching valve 512. The fifth chemical solution pipe 511 is connected to the fifth nozzle 512, and the fifth chemical solution switching valve 512 is disposed on the fifth chemical solution pipe 511. When the fifth chemical solution switching valve 512 is open, the fifth chemical solution pipe 511 supplies chemical solution to the fifth nozzle 51; when the fifth chemical solution switching valve 512 is closed, the fifth chemical solution pipe 511 stops supplying chemical solution to the fifth nozzle 51. In this embodiment, the fifth nozzle 51 is a fixed nozzle that sprays chemical solution in a stationary state, neither rising nor falling nor scanning. In this embodiment, the rinsing fluid is a mixture of carbon dioxide and deionized water (CO2W), and the fifth nozzle 51 supplies CO2W to the substrate W. CO2W is composed of carbon dioxide gas added to DIW, and it is conductive, which can conduct away the static electricity generated on the substrate W during chemical solution cleaning, avoiding contamination of the substrate W.

[0033] like Figure 1 and Figure 2 As shown, the protective drainage section of this embodiment includes a protective baffle 61 and a collection tank 62 corresponding to the protective baffle 61. The protective baffle 61 surrounds the substrate W and the substrate holding section 2, and blocks the treatment liquid discharged from the substrate W during cleaning.

[0034] In this embodiment, the protective baffle 61 includes a first baffle 611 and a second baffle 612. The first baffle 611 corresponds to the first collection tank 621, and the second baffle 612 corresponds to the second collection tank 622. The first collection tank 621 is connected to multiple drainage boxes, and the second collection tank 622 is connected to at least one drainage box. Each drainage box is connected to the corresponding collection tank via a pipe, and each pipe is equipped with a switch valve. Specifically, in this embodiment, the second collection tank 622 is connected to drainage boxes (D1, D2, D3, D4), and the first collection tank 621 is connected to drainage box (D5). Switch valves (V1, V2, V3, V4) are installed on the pipes connecting the drainage boxes (D1, D2, D3, D4) to the second collection tank 622, and a switch valve (V5) is installed on the pipe connecting the drainage box (D5) to the first collection tank 621. In this embodiment, the first baffle 611 and the second baffle 612 are driven by the lifting motor M1 and the lifting motor M2, respectively, to collect the treatment liquid discharged from the cleaning process.

[0035] In this embodiment, the first baffle 611 is driven and connected to the lifting motor M1, and the second baffle 612 is driven and connected to the lifting motor M2. Before the collection of the treatment liquid begins, the H2 position of the first baffle 611 and the H1 position of the second baffle 612 are at a certain position below the upper plane of the rotating base 3. When the collection of the treatment liquid by the first baffle 611 is required, the control unit 7 controls the lifting motor M1 to move linearly, thereby raising the first baffle 611 from the H2 height position to the H4 height position. The treatment liquid thrown out from the substrate W by the centrifugal force of rotation is blocked by the inner wall of the first baffle 611. The treatment liquid flows to the first collection tank 621 by its own weight, and then flows from the first collection tank 621 to the drain box D5. At this time, the drain switch valve V5 is in the open state. When the second baffle 612 is needed to collect the treatment liquid, the control unit 7 controls the lifting motor M2 to move linearly, thereby raising the second baffle 612 from the height position H1 to the height position H3. The treatment liquid thrown out from the substrate W by the centrifugal force of rotation is blocked by the inner wall of the second baffle 612. The blocked treatment liquid flows to the second collection tank 622. The drain valve (V1, V2, V3, V4) is opened or closed under the control of the control unit, and the treatment liquid flows to different drain boxes (D1, D2, D3, D4), thereby realizing the classified discharge of various treatment liquids.

[0036] In the above embodiments, such as Figure 1As shown, the cleaning device further includes an air regulating structure 8, which includes an air supply unit and an exhaust unit. The air supply unit is located at the top of the processing chamber 1, and the exhaust unit is located at the bottom of the processing chamber 1. Exemplarily, the processing chamber 1 is a closed space. The substrate W is sent into the processing chamber 1 and processed within it. The air supply unit is installed above the top plate of the processing chamber 1, continuously blowing clean air from the upper part of the processing chamber 1 into the chamber. The exhaust unit discharges the gas flowing through the protective drain section from the lower part of the processing chamber 1, thereby ensuring a continuous downward flow of clean gas within the processing chamber 1. This ensures that acid and alkali atomized droplets are continuously removed from the processing chamber 1, preventing acid and alkali atomized droplets from contaminating the substrate W and further improving the cleaning effect of the substrate W.

[0037] The substrate cleaning apparatus of this utility model includes a processing chamber, a substrate holding section, a first chemical supply section, a second chemical supply section, a rinsing fluid supply section, a protective drain section, and a control section. The substrate holding section is disposed inside the processing chamber. The first chemical supply section includes a first nozzle and a second nozzle, the second chemical supply section includes a third nozzle and a fourth nozzle, the rinsing fluid supply section includes a fifth nozzle, and the protective drain section includes a protective baffle and a collection tank corresponding to the protective baffle. The protective baffle can be raised and lowered so that the collection tank collects the cleaning fluid thrown out from the substrate. The control section is used to control the supply of cleaning fluid to the first nozzle, the second nozzle, the third nozzle, the fourth nozzle, and the fifth nozzle, as well as the rotation and raising and lowering of the first nozzle, the second nozzle, the third nozzle, and the fourth nozzle. The control section is also used to control the clamping and rotation of the substrate holding section, and to control the raising and lowering switching of the protective baffle of the protective drain section. This substrate cleaning apparatus can improve the removal performance of particles and contaminants on the substrate surface, and improve the performance and yield of semiconductor devices.

[0038] The method for cleaning a substrate using the substrate cleaning apparatus described in the above embodiments includes: The transport robot moves the substrate above the rotating base, where the chuck clamps the substrate to keep it horizontal. The substrate is treated by supplying a mixture of sulfuric acid, hydrogen peroxide and water to the substrate through a first nozzle; The substrate is treated by supplying a mixture of carbon dioxide and deionized water to the substrate through a fifth nozzle; Hydrofluoric acid solution is supplied to the substrate through a second nozzle to treat the substrate; Deionized water is supplied to the substrate through the third nozzle 41 to treat the substrate; Specifically, such as Figure 2-4As shown, the second baffle 612 switches from height position H1 to height position H3, and the substrate W begins to rotate at a first rotational speed on the substrate holding part 2. The first nozzle 31 of the liquid supply part 3 moves along the horizontal plane from the origin position NP1 to the center point CP position of the substrate W. The first nozzle 31 supplies SPM liquid to the center point CP of the substrate W held on the substrate holding part 2 and holds it for a predetermined time. Please refer to... Figure 3 Position P1 is the edge of substrate W. Optionally, in this embodiment, the control unit 7 controls the first nozzle 31 to scan and spray liquid cleaning between the center point CP of substrate W and the edge position P1, or the control unit 7 controls the first nozzle 31 to spray liquid cleaning at the center point CP of substrate W. The SPM solution scattered from the rotating substrate W is blocked by the inner wall of the second baffle 612 and collected in the second collection tank 622. At this time, the control unit 7 controls the drain valve V1 to be open, and the cleaning solution is discharged from the drain box D1. Since the SPM treatment solution has a strong oxidizing ability, the SPM treatment solution in this embodiment can remove organic contaminants and some metallic contaminants on the surface of the substrate.

[0039] like Figure 5 As shown, the first liquid supply valve 312 of the SPM first nozzle 31 is closed, and the SPM first nozzle 31 returns from the substrate center point CP to the origin position NP1. The drain valve V1 is switched to the closed state. The substrate holding part rotates at the second rotation speed, and the fifth liquid supply valve 512 of the rinsing liquid supply part 5 is opened, so that the fifth nozzle 51 supplies CO2W rinsing liquid at a fixed angle toward the substrate center point CP for a predetermined time. The drain valve V3 is opened, and the rinsing liquid flows through the second collection tank 622 and is discharged into the drain box D3. The second baffle 612 is maintained at the height position H3, and the substrate W starts to rotate at the third rotation speed on the substrate holding part. The fifth liquid supply valve 512 is closed to stop supplying CO2W rinsing liquid, and the drain valve V3 is closed to stop collecting CO2W drain liquid. The second nozzle 32 of the liquid supply part 3 moves along the horizontal plane from the origin position NP2 to the substrate W center point CP. The second nozzle 32 supplies DHF liquid to the substrate W center point CP held in the substrate holding part and holds for a predetermined time. In this embodiment, DHF is a solution prepared by diluting hydrofluoric acid with water. DHF reacts with the oxide layer on the silicon wafer surface to generate a water-soluble substance, thereby removing the oxide layer and obtaining a clean surface. Please refer to [link to relevant documentation]. Figure 3 Position P1 is the edge position of substrate W. Optionally, in this embodiment, the control unit 7 controls the second nozzle 32 to scan and spray liquid cleaning between the center point CP position and the edge position P1 position of substrate W, or the control unit 7 controls the second nozzle 32 to spray liquid cleaning at the center point CP position of substrate W. The DHF liquid that flies off from the rotating substrate W is blocked by the inner wall of the second baffle 612 and collected into the second collection tank 622. At this time, the control unit 7 controls the drain valve V2 to be in the open state, and the cleaning liquid flows to the drain box D2 for discharge.

[0040] like Figure 6 As shown, the second liquid supply valve 322 of the second nozzle 32 supplying DHF is closed, and the drain valve V2 is in the closed state. The second baffle 612 is maintained at height H3, and the substrate W begins to rotate at the fourth rotation speed on the substrate holding part; the third nozzle 41 of the liquid supply part 4 moves along the horizontal plane from the origin position NP3 to the center point CP position of the substrate W, and the third nozzle 41 supplies DIW liquid to the center point CP of the substrate W held in the substrate holding part and holds it for a predetermined time, replacing the residual DHF on the substrate W with DIW. Please refer to Figure 3 Position P2 is the edge position of substrate W. Optionally, in this embodiment, the control unit 7 controls the third nozzle 41 to scan and spray liquid cleaning between the center point CP position and the edge position P2 position of substrate W, or the control unit 7 controls the third nozzle 41 to spray liquid cleaning at the center point CP position of substrate W. The DIW liquid that flies off from the rotating substrate W is blocked by the inner wall of the second baffle 612 and collected into the second collection tank 622. At this time, the control unit 7 controls the drain valve V3 to be open, and the cleaning liquid flows to the drain box D3 for discharge.

[0041] The substrate is treated by supplying a mixture of ammonium hydroxide, hydrogen peroxide and water to the substrate through the fourth nozzle 42. The substrate is treated by supplying a mixture of carbon dioxide and deionized water to the substrate through the fifth nozzle 51; Specifically, such as Figure 7 As shown, the third liquid supply valve 412 of the third nozzle 41 supplying the DIW is closed, and the drain valve V3 is in the closed state. The second baffle 612 is maintained at height H3, and the substrate W begins to rotate at the 5th rotation speed on the substrate holding part 2; the fourth nozzle 42 of the liquid supply part 4 moves along the horizontal plane from the origin position NP4 to the center point CP position of the substrate W, and the fourth nozzle 42 supplies SC1 liquid to the center point CP of the substrate W held in the substrate holding part and holds it for a predetermined time. The SC1 treatment liquid in this embodiment is an alkaline liquid, which can remove particles, organic matter, and some metal contaminants from the surface of the substrate W. Please refer to Figure 3 Position P2 is the edge position of substrate W. Optionally, in this embodiment, the control unit 7 controls the fourth nozzle 42 to scan and spray liquid cleaning between the center point CP position and the edge position P2 of substrate W, or the control unit 7 controls the fourth nozzle 42 to spray liquid cleaning at the center point CP position of substrate W. The SC1 liquid that flies off from the rotating substrate W is blocked by the inner wall of the second baffle 612 and collected into the second collection tank 622. At this time, the control unit 7 controls the drain valve V4 to be in the open state, and the cleaning liquid flows to the drain box D4 for discharge.

[0042] like Figure 8As shown, the fourth liquid switch valve 422 supplying the fourth nozzle 42 of SC1 is closed, and the drain valve V4 is closed to stop collecting SC1 drain. The second baffle 612 switches to the H1 height position, and the first baffle 611 remains at the H4 height position. The substrate W starts to rotate at the sixth rotation speed on the substrate holding part. The fifth liquid switch valve 512 of the fifth nozzle 51 of the rinsing liquid supply part opens, and the fifth nozzle 51 supplies CO2W rinsing liquid at a fixed angle toward the center point CP of the substrate for a predetermined time. The CO2W replaces the SC1 remaining on the substrate W. At this time, the drain valve V5 is open, and the CO2W rinsing liquid flows to the drain box D5. Since the substrate W may generate static electricity during the cleaning process, static electricity can attract particles and cause contamination of the wafer or discharge damage to the patterned devices on the wafer. In this embodiment, the CO2W is composed of carbon dioxide gas added to the DIW. It is conductive and can conduct away the static electricity generated by the substrate W during the cleaning process, further avoiding static electricity contamination of the substrate W.

[0043] The rotational speed of the substrate is increased to dry the substrate, specifically, as follows: Figure 9 As shown, after the control unit 7 stops supplying the rinsing fluid to the rinsing fluid supply unit 5, the first baffle 611 remains at a height of H4. The control unit 2 increases the rotation speed of the substrate W to the sixth rotation speed and maintains it for a predetermined time. The rinsing fluid adhering to the substrate W is dispersed around the substrate W due to the applied centrifugal force. After the rinsing fluid is removed from the substrate W, the substrate W is dried. The rinsing fluid dispersed from the substrate W is blocked by the inner wall of the first baffle 611 and collected in the first collection tank 621. At this time, the control unit 7 controls the drain valve V5 to be open, and the cleaning fluid flows to the drain box D5 for discharge.

[0044] After the drying process is completed, the control unit 7 decelerates the substrate holding unit 2 from the 6th rotation speed to the stop rotation state, and the first baffle 611 located at the H4 height position is switched to the H2 height position to perform the substrate W removal process.

[0045] In the above embodiments, the first rotational speed is relatively low, for example, 400 revolutions per minute. This speed allows the liquid in the nozzle to fully contact the substrate W, thereby cleaning the substrate W. The second rotational speed is approximately 1400 revolutions per minute, the third rotational speed is approximately 800 revolutions per minute, the fourth rotational speed is approximately 1000 revolutions per minute, the fifth rotational speed is approximately 500 revolutions per minute, and the sixth rotational speed is relatively high, for example, the sixth rotational speed can be 2000 revolutions per minute. At this time, the liquid on the substrate W is subjected to a large centrifugal force, which can ensure that the liquid on the substrate W is thrown off, thereby drying the substrate W.

[0046] In the above embodiments, the substrate cleaning method further includes blowing air into the processing chamber from the upper part of the processing chamber to discharge the gas flowing through the protective drainage section. Specifically, as shown in the figure... Figure 1As shown, the cleaning device in this embodiment includes an air regulating structure 8, which includes an air supply unit and an exhaust unit. The air supply unit is located at the top of the processing chamber 1, and the exhaust unit is located at the bottom of the processing chamber 1. The processing chamber 1 is a closed space. The substrate W is sent into the processing chamber 1 and processed inside. The air supply unit is installed above the top plate of the processing chamber 1 and continuously blows clean air into the chamber from the top. The exhaust unit discharges the gas flowing through the protective drain section from the bottom of the processing chamber 1, thereby creating a continuous downward flow of clean gas inside the processing chamber 1. This ensures that acid and alkali atomized droplets inside the processing chamber 1 are continuously removed, preventing acid and alkali atomized droplets from contaminating the substrate W and further improving the cleaning effect of the substrate W.

[0047] A second aspect of this utility model provides a substrate processing system, including the substrate cleaning apparatus described in the above embodiments. This substrate cleaning apparatus can improve the removal performance of particles and contaminants on the substrate surface, thereby improving the performance and yield of semiconductor devices. When multiple cleaning solutions are used continuously, the substrate cleaning apparatus can effectively prevent cross-contamination of different cleaning solutions, and the discharged cleaning solutions are collected separately, achieving classified discharge of multiple processing solutions.

[0048] In the above description, the terms "an embodiment," "some embodiments," "example," "specific example," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this utility model. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0049] The above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this utility model.

Claims

1. A substrate cleaning apparatus, characterized in that: It includes a processing chamber, a substrate holding section, a chemical supply section 1, a chemical supply section 2, a rinsing solution supply section, a protective drainage section, and a control section; The substrate holding part is disposed inside the processing chamber, the first drug supply part includes a first nozzle and a second nozzle, the second drug supply part includes a third nozzle and a fourth nozzle, and the rinsing liquid supply part includes a fifth nozzle. The protective drainage section includes a protective baffle and a collection tank corresponding to the protective baffle. The protective baffle can be raised and lowered so that the collection tank collects the cleaning liquid thrown out from the substrate. The control unit is used to control the supply of liquid medicine to the first nozzle, second nozzle, third nozzle, fourth nozzle and fifth nozzle, as well as the rotation and lifting of the first nozzle, second nozzle, third nozzle and fourth nozzle. The control unit is also used to control the clamping and rotation of the substrate holding part, and to control the lifting and lowering switching of the protective baffle of the protective drain part.

2. The substrate cleaning apparatus according to claim 1, characterized in that: The first nozzle and the second nozzle are used to supply acidic liquid, and the third nozzle and the fourth nozzle are used to supply alkaline liquid. The first nozzle and the second nozzle are disposed on the first rocker arm, and the third nozzle and the fourth nozzle are disposed on the second rocker arm.

3. The substrate cleaning apparatus according to claim 2, characterized in that: The first rocker arm includes a first end for setting a nozzle and a second end away from the nozzle. The second ends of the first rocker arm and the second ends of the second rocker arm are located on the same side of the substrate holding portion. A pipeline interface is provided on the processing chamber. The second ends of the first rocker arm and the second ends of the second rocker arm are both close to the pipeline interface.

4. The substrate cleaning apparatus according to claim 1, characterized in that: The protective baffle includes a first baffle and a second baffle. The first baffle corresponds to a first collection tank, and the second baffle corresponds to a second collection tank. The first collection tank is connected to a plurality of drain boxes, and the second collection tank is connected to at least one drain box. Each drain box is connected to the corresponding collection tank through a pipe, and each pipe is equipped with a switch valve.

5. The substrate cleaning apparatus according to claim 4, characterized in that: The number of drainage boxes connected to the first collection tank is greater than or equal to four.

6. The substrate cleaning apparatus according to claim 1, characterized in that: The first medicine supply unit, the second medicine supply unit, and the rinsing fluid supply unit all include medicine piping connected to a nozzle. A switch valve is provided on the medicine piping. The switch valves of the first medicine supply unit, the second medicine supply unit, and the rinsing fluid supply unit are all electrically connected to the control unit.

7. The substrate cleaning apparatus according to claim 1, characterized in that: The flushing fluid supply unit is used to supply a mixture of carbon dioxide and deionized water. The flushing fluid supply unit includes a medicine pipe connected to a nozzle, and a switch valve is provided on the medicine pipe. The switch valve of the flushing fluid supply unit is electrically connected to the control unit.

8. The substrate cleaning apparatus according to any one of claims 1-7, characterized in that: The cleaning device further includes an air regulating structure, which is used to blow air from the upper part of the processing chamber into the processing chamber and discharge the gas flowing through the protective drain section.

9. The substrate cleaning apparatus according to claim 8, characterized in that: The air conditioning structure includes an air supply unit and an exhaust unit. The air supply unit is located at the top of the processing chamber, and the exhaust unit is located at the bottom of the processing chamber.

10. A substrate processing system, characterized in that, The invention includes a substrate cleaning apparatus, wherein the substrate cleaning apparatus is the substrate cleaning apparatus according to any one of claims 1-9.

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