Vertical cavity surface emitting laser
CN224697212UActive Publication Date: 2026-08-28HANGZHOU KAIKAI TECHNOLOGY CO LTD +1
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Patent Information
- Application Number
- CN202520699086.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-15
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2035-04-15
AI Technical Summary
Technical Problem
外层金属原子扩散到半导体中会形成深能级缺陷，这些缺陷会成为非辐射复合中心，影响载流子的寿命和器件的发光效率
Benefits of technology
本实用新型提供的垂直腔面发射激光器，由于将抗氧化性能更好的外层上导电金属与磊晶层分割开，避免了上导电金属中的金属原子扩散到磊晶层的半导体材料当中的问题，降低了深能级缺陷可能产生的非辐射复合中心的概率，提高了载流子的寿命和器件的发光效率。另外，由于最外层上导电金属的边缘未直接接触磊晶层，亦不会导致接触部分的半导体材料与上导电金属之间的功函数不匹配，从而在高温下可能发生合金化反应，导致界面不稳定，甚至形成空洞的问题。使器件的发光效率和使用寿命得到有效提升。
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Abstract
The embodiment of the present application relates to a kind of vertical cavity surface emitting lasers, including substrate, be located on the epitaxial layer of substrate and the conductive metal of electric connection with the epitaxial layer;The conductive metal includes upper conductive metal and lower conductive metal, the lower conductive metal is located on the epitaxial layer, and electric contact is made with the epitaxial layer, the upper conductive metal is located on the lower conductive metal, and not contact with the epitaxial layer.This application can improve the phenomenon of conductive metal material drilling, improve device reliability.
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