An intake disc structure and a semiconductor device

Abstract

This invention discloses an air intake plate structure and a semiconductor device. The air intake plate structure includes an air intake plate body, an air intake unit, an air supply unit, and an air distribution unit. The air intake unit includes at least two independent air intake channels, the air supply unit includes at least two rings of independent air supply channels, and the air distribution unit has at least two sets, with each air intake channel, air supply channel, and air distribution unit corresponding to the others. The air distribution unit includes multiple channels distributed along the circumference, with the diameter of each channel gradually increasing along a first direction, which is from near the inlet of the corresponding air intake channel to away from the inlet of the corresponding air intake channel. This invention, by setting at least two independent air intake channels in the air intake unit and uniquely connecting each to at least two rings of independent air supply channels in the air supply unit, allows the gas type and flow rate in different circumferential regions of the wafer to be independently controlled and adjusted, solving the problem in the prior art where a single channel cannot independently regulate the gas distribution in the outermost ring.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, and in particular to an air intake disc structure and semiconductor device. Background Technology

[0002] In semiconductor thin film deposition equipment, film uniformity directly affects device performance and process stability. Existing gas inlet devices only have a single gas inlet channel on the side. This channel can only regulate the gas distribution in the outermost region of the wafer, and cannot independently adjust the gas distribution in the sub-outer region, resulting in limited freedom of process control from the wafer edge to the sub-edge region. Simultaneously, due to the lack of a uniform gas distribution structure, gas entering the cavity directly from the inlet produces circumferential uneven distribution, with excessively high gas concentration near the inlet and insufficient concentration further away, causing a decrease in circumferential uniformity of the film deposition. Especially for advanced processes requiring the deposition of multiple thin films in a single pass, existing devices cannot achieve precise adjustment of local film performance by independently controlling the gas parameters of the outer and sub-outer rings, becoming a technical bottleneck for improving deposition uniformity. Utility Model Content

[0003] The present invention provides an air intake disc structure and a semiconductor device, which solves the technical problem of uneven circumferential distribution of gas when the gas directly enters the cavity from the air intake port in the traditional air intake disc structure.

[0004] To address the aforementioned problems, according to one aspect of this application, an embodiment of the present invention provides an air intake disc structure, the air intake disc structure comprising an air intake disc body, an air intake unit, an air supply unit, and an air equalization unit, the air intake unit being disposed on the side of the air intake disc body, the air supply unit being disposed within the air intake disc body and communicating with the air intake unit, and the air equalization unit being disposed within the air supply unit;

[0005] The air intake unit includes at least two independent air intake channels, the air supply unit includes at least two independent air supply channels, and the air equalization unit has at least two sets, with the air intake channels, the air supply channels, and the air equalization unit corresponding one-to-one; wherein, the air equalization unit includes multiple channels distributed along the circumferential direction, and the diameter of each channel gradually increases along a first direction, the first direction being from the direction close to the inlet of the corresponding air intake channel to the direction away from the inlet of the corresponding air intake channel.

[0006] In some embodiments, the gas equalization unit includes a primary gas equalization section and a secondary gas equalization section. The primary gas equalization section includes a plurality of channels with gradually changing apertures, and the secondary gas equalization section includes two branch channels. The output end of each channel is split into the two branch channels; and the flow resistance gradually decreases as the gas flows through the channels to the branch channels.

[0007] In some embodiments, the aperture of the branch channel is larger than the aperture of the corresponding channel.

[0008] In some embodiments, the gas injection direction of the branch channel forms an angle of 30°-45° with the horizontal plane of the intake disc body.

[0009] In some embodiments, the air intake unit includes a first air intake channel and a second air intake channel, and the air supply unit includes an outer ring air supply channel and a secondary outer ring air supply channel; the first air intake channel is connected to the outer ring air supply channel, and the second air intake channel is connected to the secondary outer ring air supply channel.

[0010] In some embodiments, the gas outlet of the outer ring gas supply channel covers the wafer edge region, and the gas outlet of the secondary outer ring gas supply channel covers the wafer secondary edge region; wherein, the edge region corresponds to a region with a radius between R1 and R2, and the secondary edge region corresponds to a region with a radius between R3 and R4, where 120mm≤R1≤125mm, 145mm≤R2≤150mm, 60mm≤R3≤65mm, and 85mm≤R4≤90mm.

[0011] In some embodiments, the outer ring gas supply channel and the secondary outer ring gas supply channel are independent of each other, so as to introduce gas media with independently controlled flow rates or components.

[0012] In some embodiments, the diameter of the channel increases linearly along the first direction, and the increase factor of the diameter of adjacent channels is 0.05-0.2 mm.

[0013] In some embodiments, the channels of the air distribution unit are symmetrically distributed on both sides of the corresponding air intake channel, with 15-25 channels on each side.

[0014] According to another aspect of this application, an embodiment of the present invention provides a semiconductor device including the above-described air intake disc structure.

[0015] Compared with the prior art, the intake disc structure of this utility model has at least the following beneficial effects:

[0016] The air intake disc structure provided by this utility model includes an air intake disc body, an air intake unit, an air supply unit, and an air distribution unit. The air intake unit is disposed on the side of the air intake disc body, the air supply unit is disposed inside the air intake disc body and communicates with the air intake unit, and the air distribution unit is disposed on the air supply unit. The air intake unit includes at least two independent air intake channels, the air supply unit includes at least two rings of independent air supply channels, and the air distribution unit has at least two sets, with each air intake channel, air supply channel, and air distribution unit corresponding to the others. The air distribution unit includes multiple channels distributed along the circumference, and the diameter of each channel gradually increases along a first direction, which is from near the inlet of the corresponding air intake channel to away from the inlet of the corresponding air intake channel.

[0017] This invention features at least two independent air intake channels in the air intake unit, each uniquely connected to at least two independent gas supply channels in the gas supply unit. This allows for independent control and adjustment of the gas type and flow rate in different circumferential regions of the wafer, solving the problem in the prior art where a single channel cannot independently regulate the gas distribution in the outermost ring. Simultaneously, by incorporating a gas equalization unit within each gas supply channel, with its orifice diameter gradually increasing from near the inlet to the distance away, the flow resistance difference balances the gas output flow rate at different positions along the circumference of the gas supply channel. This overcomes the defect of uneven circumferential gas distribution within the annular channel, thereby improving the uniformity of thin film deposition along the wafer's circumference.

[0018] The semiconductor device provided by this utility model is designed based on the above-mentioned air intake plate structure. Its beneficial effects are the same as those of the above-mentioned air intake plate structure, and will not be repeated here.

[0019] The above description is only an overview of the technical solution of this utility model. In order to better understand the technical means of this utility model and to implement it in accordance with the contents of the specification, the preferred embodiments of this utility model are described in detail below with reference to the accompanying drawings. Attached Figure Description

[0020] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0021] Figure 1 This invention presents a transverse cross-sectional view of an air intake disc structure at the air distribution unit according to an embodiment of the present invention;

[0022] Figure 2 yes Figure 1 A magnified view of a section at point A in the middle;

[0023] Figure 3 This invention provides a transverse sectional view of an intake disc structure at the first intake channel according to an embodiment of the present invention.

[0024] Figure 4 This invention provides a transverse sectional view of an intake disc structure at the second intake channel according to an embodiment of the present invention.

[0025] Figure 5 This invention provides a longitudinal sectional view of an intake disc structure at the first intake channel according to an embodiment of the present invention.

[0026] Figure 6 This invention provides a longitudinal sectional view of an intake disc structure at the second intake channel according to an embodiment of the present invention.

[0027] Figure 7 This invention provides a schematic diagram of an intake disc structure according to an embodiment of the present invention.

[0028] Figure label:

[0029] 1. Intake disc body; 2. Intake unit; 21. First intake channel; 22. Second intake channel; 3. Air supply unit; 31. Outer ring air supply channel; 32. Secondary outer ring air supply channel; 4. Air distribution unit; 41. Primary air distribution section; 42. Secondary air distribution section; 421. Branch channel. Detailed Implementation

[0030] To further illustrate the technical means and effects adopted by this utility model to achieve its intended purpose, the specific implementation methods, structures, features, and effects according to this utility model application are described in detail below with reference to the accompanying drawings and preferred embodiments. In the following description, different "an embodiment" or "an embodiment" do not necessarily refer to the same embodiment. Furthermore, specific features, structures, or characteristics in one or more embodiments can be combined in any suitable form.

[0031] In the description of this utility model, it should be clarified that the terms "first," "second," etc., in the specification, claims, and drawings of this utility model are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence; the terms "vertical," "lateral," "longitudinal," "front," "back," "left," "right," "up," "down," "horizontal," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing this utility model, and do not mean that the device or element referred to must have a specific orientation or position, and therefore should not be construed as a limitation of this utility model.

[0032] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0033] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0034] Example 1

[0035] This embodiment provides an intake disc structure, such as Figures 1-7 As shown, the air intake plate structure includes an air intake plate body 1, an air intake unit 2, an air supply unit 3, and an air equalization unit 4. The air intake unit 2 is disposed on the side of the air intake plate body 1. The air supply unit 3 is disposed inside the air intake plate body 1 and communicates with the air intake unit 2. The air equalization unit 4 is disposed inside the air supply unit 3.

[0036] The air intake unit 2 includes at least two independent air intake channels, the air supply unit 3 includes at least two independent air supply channels, and the air equalization unit 4 has at least two sets, and the air intake channels, the air supply channels, and the air equalization unit 4 correspond one-to-one; wherein, the air equalization unit 4 includes a plurality of channels distributed along the circumferential direction, and the diameter of each channel gradually increases along a first direction, the first direction being from the direction close to the inlet of the corresponding air intake channel to the direction away from the inlet of the corresponding air intake channel.

[0037] An intake unit 2 is provided on the side of the intake disc body 1. The intake unit 2 contains at least two independent intake channels. Each intake channel is connected inside the intake disc body 1 to an independent air supply channel in the corresponding air supply unit 3. Each air supply channel is provided with an air equalization unit 4, so that an intake channel, an air supply channel and an air equalization unit 4 form an independent air path system, and the groups are not interconnected. The air equalization unit 4 contains multiple channels arranged in a circumferential direction. For each group of systems, the diameter of the channels gradually increases from the position near the inlet of the intake channel in that group to the direction away from the inlet (i.e., in the circumferential direction).

[0038] The main body 1 of the intake plate constitutes the core support and gas flow path carrier of the device. The intake unit 2 introduces external gas through at least two independent intake channels. The supply unit 3 delivers gas to the target annular region above the wafer through at least two independent supply channels. The gas equalization unit 4 regulates the circumferential distribution uniformity of gas within the supply channels through its gradually varying orifice diameters. The intake channel is the inlet path for gas entering the device. The supply channel is the chamber through which gas is transported within the device to the target region. The orifice diameter is the specific airflow regulation structure of the gas equalization unit 4, generating different flow resistances through variations in its orifice diameter.

[0039] In this embodiment, external gas enters the device through different intake channels of the intake unit 2. Gas from each intake channel flows into a specific supply channel of the supply unit 3, which is uniquely connected to it. The gas flows within the supply channel and reaches the gas equalization unit 4 embedded therein. When the gas flows through the orifices of the gas equalization unit 4, the orifices closer to the intake channel inlet have smaller orifice diameters and higher flow resistance, thus limiting the gas flow rate; while the orifices farther from the intake channel inlet have larger orifice diameters and lower flow resistance, allowing more gas to pass through. This orifice gradient design automatically compensates for the pressure difference in the circumferential direction, ensuring that the gas ultimately flows out uniformly from the supply channel outlets throughout the entire circumference, covering the target annular region of the wafer.

[0040] This embodiment uses an intake unit 2 to provide at least two independent intake channels, each uniquely connected to at least two independent gas supply channels in the gas supply unit 3. This allows for independent control and adjustment of the gas type and flow rate in different circumferential regions of the wafer, solving the problem in the prior art where a single channel cannot independently regulate the gas distribution in the outermost ring. Simultaneously, by providing a gas equalization unit 4 within each gas supply channel, with its orifice diameter gradually increasing from near the intake channel inlet to further away, the flow resistance difference balances the gas output flow rate at different positions along the circumference of the gas supply channel. This overcomes the defect of uneven circumferential gas distribution within the annular channel, thereby improving the uniformity of thin film deposition along the wafer's circumference.

[0041] In a specific embodiment, such as Figure 1 and Figure 2 As shown, the gas equalization unit 4 includes a primary gas equalization section 41 and a secondary gas equalization section 42. The primary gas equalization section 41 includes a plurality of channels with gradually changing apertures. The secondary gas equalization section 42 includes two branch channels 421. The output end of each channel is split into the two branch channels 421. The flow resistance gradually decreases as the gas flows through the channel to the branch channel 421.

[0042] In the gas equalization unit 4, the primary gas equalization section 41 includes multiple channels with gradually changing diameters distributed along the circumferential direction. The output end of each channel is connected to the secondary gas equalization section 42, which consists of two branch channels 421, meaning that the output end of each channel is divided into two branches and connected to the two branch channels 421. The gas flow path is as follows: it first passes through the channels of the primary gas equalization section 41, and then enters the corresponding two branch channels 421. During this process, because the flow cross-sectional area of ​​the branch channel 421 is larger than that of its upstream channel, the flow resistance gradually decreases as the gas flows through the channel to the branch channel 421.

[0043] The primary gas equalization section 41 functions to achieve initial flow distribution and equalization of gas in the circumferential direction through its circumferentially varying orifice diameter (smaller near the inlet, larger far from the inlet). The secondary gas equalization section 42 performs secondary distribution and diffusion of the gas after the initial distribution by the primary gas equalization section 41. The branch channel 421, as a specific component of the secondary gas equalization section 42, receives and diverts gas from individual orifices, further promoting uniform gas distribution by expanding the flow path and reducing the gas velocity to make the flow smoother.

[0044] In this embodiment, the gas first flows through the channels of the primary gas equalization section 41, where the circumferential pressure difference is compensated by the aperture gradient (smaller near the end and larger far the end), achieving initial equalization of the circumferential flow rate. Subsequently, the gas flowing out of each channel is evenly distributed to the two downstream branch channels 421. Since the flow cross-sectional area of ​​the branch channels 421 is larger than that of the upstream channels, the flow resistance is further reduced, the flow velocity is lowered, and the turbulence is weakened when the gas flows through them. The coordinated operation of the two-stage gas equalization structure allows the gas to undergo two distribution and diffusion processes, ultimately significantly improving the uniformity of the gas distribution in the circumferential direction and the smoothness of the flow when entering the reaction chamber.

[0045] In a specific embodiment, the aperture of the branch channel 421 is larger than the aperture of the corresponding channel.

[0046] The orifice size of the branch channel 421 is designed to be larger than the orifice size of the corresponding channel in the primary gas equalization section 41 directly connected upstream. This feature means that when gas flows out of a single channel in the primary gas equalization section 41 and enters the two branch channels 421 of the secondary gas equalization section 42, the flow cross-sectional area is significantly increased. This orifice relationship directly results in a further reduction in the flow resistance encountered by the gas when flowing through the branch channel 421 compared to when flowing through the upstream channel, thereby achieving a flow resistance reduction effect in the secondary gas equalization process. This significantly reduces the flow resistance of the gas entering the branch channel 421 from the channel. Due to the increased flow cross-section, the gas velocity is reduced, the flow state is more stable, and turbulence is weakened. This helps to promote the uniform diffusion and distribution of gas within the branch channel 421, further optimizing and consolidating the initial gas equalization effect of the primary gas equalization section 41, ultimately improving the uniformity and stability of the gas output in the entire circumferential direction.

[0047] In a specific embodiment, the gas injection direction of the branch channel 421 forms an angle of 30°-45° with the horizontal plane of the intake disc body 1.

[0048] The outlet direction of branch channel 421 is set to form an inclined angle of 30° to 45° with the horizontal reference plane of the inlet disk body 1. This means that the gas ejected from the end of branch channel 421 is not vertically downward, but enters the reaction chamber obliquely downward at an angle of 30°-45°. Its core effect is to optimize the flow state of the gas after entering the reaction chamber. The oblique injection reduces the vertical impact force of the gas on the wafer surface and avoids local airflow disturbance. At the same time, this angle promotes the generation of radial and circumferential diffusion components of the gas, enhancing the mixing and distribution uniformity of the gas in the target annular region on the wafer. The final effect is to further improve the deposition uniformity and process stability of the thin film in the wafer edge to sub-edge region.

[0049] In a specific embodiment, such as Figures 3-6 As shown, the air intake unit 2 includes a first air intake channel 21 and a second air intake channel 22, and the air supply unit 3 includes an outer ring air supply channel 31 and a secondary outer ring air supply channel 32; the first air intake channel 21 is connected to the outer ring air supply channel 31, and the second air intake channel 22 is connected to the secondary outer ring air supply channel 32.

[0050] The intake unit 2 includes a first intake channel 21 and a second intake channel 22 that are independent of each other, and the air supply unit 3 includes an outer ring air supply channel 31 and a secondary outer ring air supply channel 32 that are independent of each other; wherein the first intake channel 21 is directly connected to the outer ring air supply channel 31 inside the intake plate body 1 to form an independent first air passage system, and the second intake channel 22 is directly connected to the secondary outer ring air supply channel 32 inside the intake plate body 1 to form an independent second air passage system, and the two air passage systems are not connected to each other in structure.

[0051] This embodiment achieves precise, independent control of different edge regions of the wafer. Through the dedicated connection between the first air intake channel 21 and the outer ring air supply channel 31, the type and flow rate of the gas acting on the outermost region of the wafer can be independently adjusted. Similarly, through the dedicated connection between the second air intake channel 22 and the secondary outer ring air supply channel 32, the type and flow rate of the gas acting on the secondary outer ring region of the wafer can be independently adjusted. This physically isolated dual-channel design completely solves the problem in the prior art where a single channel cannot independently control the gas distribution in the secondary outer ring, providing differentiated process control methods for the wafer edge to the secondary edge region.

[0052] In a specific embodiment, such as Figures 1-4 As shown, the gas outlet of the outer ring gas supply channel 31 covers the wafer edge region, and the gas outlet of the secondary outer ring gas supply channel 32 covers the wafer secondary edge region; wherein, the edge region corresponds to the region with radius between R1 and R2, and the secondary edge region corresponds to the region with radius between R3 and R4, where 120mm≤R1≤125mm, 145mm≤R2≤150mm, 60mm≤R3≤65mm, and 85mm≤R4≤90mm.

[0053] The gas outlet of the outer ring gas supply channel 31 faces the outermost annular region of the wafer, and the gas outlet of the second outer ring gas supply channel 32 faces the second outermost annular region of the wafer. The gas output from the outer ring gas supply channel 31 precisely covers the process adjustment area at the wafer edge (i.e., the outermost ring), while the gas output from the second outer ring gas supply channel 32 precisely covers the process adjustment area at the wafer's second edge (i.e., the second outer ring). The core effect of this feature is that the physically isolated dual-channel design enables independent gas supply to the wafer edge and second-edge regions. This ensures that the gas from the outer ring gas supply channel 31 only affects the thin film deposition process in the edge region, and the gas from the second outer ring gas supply channel 32 only affects the thin film deposition process in the second-edge region, thereby providing differentiated gas environment control capabilities for different radial positions of the wafer.

[0054] The optimal radius range for the edge region is R1 = 122.5 mm to R2 = 147.5 mm, and the optimal radius range for the secondary edge region is R3 = 62.5 mm to R4 = 87.5 mm. This range has two effects: First, the outer ring gas supply channel 31 covers a 25 mm wide annular region of 122.5-147.5 mm, precisely corresponding to the outermost high-uniformity sensitive area of ​​the wafer; the secondary outer ring gas supply channel 32 covers a 25 mm wide annular region of 62.5-87.5 mm, precisely corresponding to the critical control area of ​​the secondary outer edge of the wafer. Second, this 25 mm annular width design ensures effective gas coverage of the target area while avoiding overlap with adjacent functional areas; the 122.5 mm starting point avoids the sensitive area at the wafer center, the 147.5 mm ending point covers the entire edge, the 62.5 mm starting point connects to the central uniform area, and the 87.5 mm ending point precisely separates the edge and the secondary edge, collectively achieving refined independent control of the gradient process from the wafer edge to the secondary edge.

[0055] In a specific embodiment, the outer ring gas supply channel 31 and the secondary outer ring gas supply channel 32 are independent of each other, so as to introduce gas media with independently controlled flow rates or components.

[0056] The outer ring air supply channel 31 and the secondary outer ring air supply channel 32 are physically isolated independent cavity structures within the air intake plate body 1, and there is no gas communication path between them. Based on this structural characteristic, the outer ring air supply channel 31 can be independently connected to an external air source system A and introduced with a gas medium of a specific flow rate and composition (such as a reactive gas or an inert gas). The secondary outer ring air supply channel 32 can be independently connected to an external air source system B and introduced with a gas medium of the same or different flow rate and the same or different composition (such as another reactive gas or an inert gas). The gas parameters of the two channels are controlled separately by independent air source control systems. The core effect of this feature is that it enables decoupled control of process parameters between the wafer edge region and the sub-edge region: a customized gas environment is independently input into the wafer edge region (e.g., 122.5-147.5mm) through the outer ring gas supply channel 31, while a differentiated gas environment is independently input into the wafer sub-edge region (e.g., 62.5-87.5mm) through the sub-outer ring gas supply channel 32. This allows for precise control of reactant concentration distribution in different annular regions, solving the technical defect that a single channel cannot control in different areas, and significantly improving the uniformity of thin film deposition in the wafer radial direction.

[0057] In a specific embodiment, the diameter of the channel increases linearly along the first direction, and the increase factor of the diameter of adjacent channels is 0.05-0.2 mm.

[0058] In the gas equalization unit 4, the diameter of all channels increases linearly and uniformly along a first direction (i.e., from the circumferential direction away from the corresponding air intake inlet), with a fixed difference between adjacent channels, ranging from 0.05 mm to 0.2 mm. 0.1 mm is used as the optimal increase factor, resulting in the smallest diameter for the first channel closest to the air intake inlet, with each subsequent channel increasing by 0.1 mm until the largest diameter is found in the last channel furthest from the air intake inlet. The core effect of this feature is to achieve regular compensation for the circumferential pressure attenuation within the gas supply channel through precisely controlled linear diameter gradients: smaller increase factors are suitable for high-precision fine-tuning scenarios, generating a smooth flow resistance transition; larger increase factors are suitable for processes requiring significant flow compensation, producing a noticeable flow resistance step change; and the optimal 0.1 mm increase factor, under verification, achieves the best balance in gas uniformity. This quantifiable linear growth design ensures a highly consistent gas flow rate when the gas exits from the orifice throughout the entire circumference, completely solving the problem of uneven circumferential gas distribution in the prior art.

[0059] In a specific embodiment, the channels of the air distribution unit 4 are symmetrically distributed on both sides of the corresponding air intake channel, with 15-25 channels on each side.

[0060] In this embodiment, all channels are symmetrically distributed in a circular direction with the inlet axis of the corresponding air intake channel (such as the first air intake channel 21 or the second air intake channel 22) as the center of symmetry. Simultaneously, the number of channels distributed on one side (i.e., one side of the center of symmetry) is set to 15 to 25, with an optimal number of 20. The core effects of this feature are reflected in three aspects: First, the symmetrical distribution design ensures completely balanced airflow distribution on both sides of the air intake channel, eliminating circumferential flow deviation caused by asymmetrical layout. Second, the range of 15-25 channels per side balances gas uniformity accuracy and processing feasibility; 15 channels can meet basic gas uniformity requirements and reduce processing complexity, 25 channels can improve gas distribution resolution, and the optimal 20-channel design can achieve fine flow adjustment in the circumferential direction with a reasonable density. Third, the symmetrical and optimized number of channels work together on the gas uniformity unit 4, enabling the gas to obtain a highly consistent mass flow output at the entire circumferential outlet of the gas supply channel, completely solving the defect of uneven circumferential gas distribution in the prior art.

[0061] In this embodiment, gas first enters the intake plate body 1 independently through the first intake channel 21 and the second intake channel 22 of the intake unit 2. Gas from the first intake channel 21 flows into the outer ring supply channel 31 connected to it, and gas from the second intake channel 22 flows into the secondary outer ring supply channel 32 connected to it, with the gas in the two channels completely isolated. Within the outer ring supply channel 31, the gas flows to the primary gas equalization section 41 of the gas equalization unit 4. The channels in this section are symmetrically distributed along the circumference, and the orifice diameter increases linearly from the inlet near the first intake channel 21 to the distance away. By limiting the flow rate through the small orifice diameter and high flow resistance at the near end, and increasing the flow rate through the large orifice diameter and low flow resistance at the far end, the gas is initially evenly distributed circumferentially. Subsequently, the gas is diverted from the output end of each channel of the primary gas equalization section 41 to the two branch channels 421 of the secondary gas equalization section 42. Because the orifice diameter of the branch channel 421 is larger than that of the corresponding channel, the flow cross-section is expanded, further reducing the flow resistance, reducing the gas flow velocity, and making the flow more stable. Branch channel 421 injects gas into the chamber at a 30°-45° tilt angle, reducing airflow impact and enhancing diffusion. Finally, the gas in the outer ring gas supply channel 31 uniformly covers the wafer edge region of 122.5-147.5 mm. Simultaneously, the gas in the secondary outer ring gas supply channel 32 undergoes the same process: after being homogenized through the gradually changing aperture channels of the primary gas homogenizing section 41, it is diverted to the branch channel 421 of the secondary gas homogenizing section 42 for drag reduction and deceleration, and then ejected at an tilt angle, uniformly covering the wafer's secondary edge region of 62.5-87.5 mm. The flow rate or composition of the gas medium introduced into the two gas supply channels can be independently controlled, achieving differentiated and precise control of different annular regions of the wafer.

[0062] Example 2

[0063] This embodiment provides a semiconductor device, which includes the air intake disc structure described in Embodiment 1.

[0064] This semiconductor device achieves a breakthrough optimization of wafer edge processing by integrating the air intake disk structure of Embodiment 1: its outer ring gas supply channel 31 and the secondary outer ring gas supply channel 32 can independently supply gas media with different flow rates or compositions, precisely controlling the reactant concentration distribution in the wafer edge region (122.5-147.5mm) and the secondary edge region (62.5-87.5mm), overcoming the limitation of single channels in terms of zoned control. Simultaneously, the primary gas homogenizing unit 41 of the gas homogenizing unit 4 compensates for circumferential gas pressure attenuation through linearly tapered orifice channels, while the branch channels 421 of the secondary gas homogenizing unit 42 reduce flow resistance by enlarging the orifice and injecting gas at a 30°-45° angle. The two stages work together to ensure uniform and stable gas output in the circumferential direction. The final effect is a significant improvement in the uniformity of thin film deposition from the wafer edge to the secondary edge region, especially meeting the advanced process requirements of single-pass deposition of multilayer thin films, enhancing device performance and production yield.

[0065] The above description is merely a specific embodiment of this utility model, but the protection scope of this utility model is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this utility model, and these modifications or substitutions should all be covered within the protection scope of this utility model. Therefore, the protection scope of this utility model should be determined by the scope of the claims.

Claims

1. An intake disc structure, characterized in that, The air intake disc structure includes an air intake disc body, an air intake unit, an air supply unit, and an air equalization unit. The air intake unit is disposed on the side of the air intake disc body, the air supply unit is disposed inside the air intake disc body and communicates with the air intake unit, and the air equalization unit is disposed inside the air supply unit. The air intake unit includes at least two independent air intake channels, the air supply unit includes at least two independent air supply channels, and the air equalization unit has at least two sets, with the air intake channels, the air supply channels, and the air equalization unit corresponding one-to-one; wherein, the air equalization unit includes multiple channels distributed along the circumferential direction, and the diameter of each channel gradually increases along a first direction, the first direction being from the direction close to the inlet of the corresponding air intake channel to the direction away from the inlet of the corresponding air intake channel.

2. The intake disc structure according to claim 1, characterized in that, The gas equalization unit includes a primary gas equalization section and a secondary gas equalization section. The primary gas equalization section includes multiple channels with gradually changing apertures. The secondary gas equalization section includes two branch channels, and the output end of each channel is split into the two branch channels. Furthermore, the flow resistance gradually decreases as the gas flows through the orifice to the branch channel.

3. The intake disc structure according to claim 2, characterized in that, The diameter of the branch channel is larger than the diameter of the corresponding channel.

4. The intake disc structure according to claim 2, characterized in that, The gas injection direction of the branch channel forms an angle of 30°-45° with the horizontal plane of the main body of the air intake plate.

5. The intake disc structure according to claim 1, characterized in that, The air intake unit includes a first air intake channel and a second air intake channel, and the air supply unit includes an outer ring air supply channel and a secondary outer ring air supply channel; the first air intake channel is connected to the outer ring air supply channel, and the second air intake channel is connected to the secondary outer ring air supply channel.

6. The intake disc structure according to claim 5, characterized in that, The gas outlet of the outer ring gas supply channel covers the wafer edge region, and the gas outlet of the secondary outer ring gas supply channel covers the wafer secondary edge region; wherein, the edge region corresponds to the region with radius between R1 and R2, and the secondary edge region corresponds to the region with radius between R3 and R4, where 120mm≤R1≤125mm, 145mm≤R2≤150mm, 60mm≤R3≤65mm, and 85mm≤R4≤90mm.

7. The intake disc structure according to claim 5, characterized in that, The outer ring gas supply channel and the secondary outer ring gas supply channel are independent of each other, so that they can be supplied with gas media with independently controlled flow rates or components.

8. The intake disc structure according to claim 1, characterized in that, The diameter of the channel increases linearly along the first direction, and the increase factor of the diameter of adjacent channels is 0.05-0.2 mm.

9. The intake disc structure according to claim 1, characterized in that, The channels of the gas equalization unit are symmetrically distributed on both sides of the corresponding air intake channel, with 15-25 channels on each side.

10. A semiconductor device, characterized in that, The semiconductor device includes the intake disc structure as described in any one of claims 1-9.

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