IGBT modules and IGBT devices with MOSFET chips

Abstract

This utility model discloses an IGBT module and IGBT device with a MOSFET chip. The IGBT module includes one or more IGBT units. Each IGBT unit includes a substrate, a conductive sheet disposed on the substrate, a MOSFET chip soldered to the conductive sheet, and a CLIP component soldered between the MOSFET chip and the conductive sheet. The conductive sheet includes a first conductive sheet, a second conductive sheet, and a third conductive sheet arranged sequentially at intervals along a first direction, wherein the area of ​​the second conductive sheet is larger than the areas of the first and third conductive sheets. The MOSFET chip integrates a diode chip, and the drain (D) terminal of the MOSFET chip is soldered to the second conductive sheet. The CLIP component includes a first CLIP component soldered between the source (S) terminal of the MOSFET chip and the third conductive sheet, and a second CLIP component soldered between the gate (G) terminal of the MOSFET chip and the first conductive sheet. Compared with the prior art, this utility model has a simple packaging process and a high yield rate.

Description

Technical Field

[0001] This utility model relates to the semiconductor field, and more particularly to the packaging of IGBT modules with MOSFET chips. Background Technology

[0002] Existing IGBT modules typically consist of multiple IGBT sub-units, each containing an IGBT chip and a diode chip. The IGBT module packaging structure generally includes a heat dissipation substrate, conductive sheets laid on the heat dissipation substrate, IGBT and diode chips soldered onto the conductive sheets, and electrical connectors connecting the IGBT chip, diode chip, and conductive sheets. Not only do the IGBT and diode chips need to be soldered separately onto the conductive sheets, but electrical connectors are also required to connect them. This involves numerous steps and increases the complexity and variety of the electrical connectors, making IGBT module packaging more difficult and reducing yield.

[0003] Therefore, there is an urgent need for an IGBT module and IGBT device with a MOSFET chip that can solve the above problems. Utility Model Content

[0004] The purpose of this invention is to provide an IGBT module and IGBT device with a MOSFET chip, which has a simple packaging process and a high yield rate.

[0005] To achieve the above objectives, this utility model provides an IGBT module with a MOSFET chip, including a substrate and one or more IGBT units disposed on the substrate. Each IGBT unit includes a conductive sheet disposed on the substrate, a MOSFET chip soldered to the conductive sheet, and a CLIP component soldered between the MOSFET chip and the conductive sheet. The conductive sheet includes a first conductive sheet, a second conductive sheet, and a third conductive sheet arranged at intervals along a first direction, wherein the area of ​​the second conductive sheet is larger than the areas of the first and third conductive sheets. The MOSFET chip integrates a diode chip, and the drain (D) terminal of the MOSFET chip is soldered to the second conductive sheet. The CLIP component includes a first CLIP component soldered between the source (S) terminal of the MOSFET chip and the third conductive sheet, and a second CLIP component soldered between the gate (G) terminal of the MOSFET chip and the first conductive sheet.

[0006] Preferably, the second conductive sheet has a first stepped pattern with a matching shape between its first side in the first direction and the corresponding side of the first conductive sheet, and a second stepped pattern with a matching shape between its second side in the first direction and the corresponding side of the third conductive sheet. The first and second sides of the second conductive sheet are opposite sides along the first direction. The first stepped pattern causes the step size of the first conductive sheet to increase as it extends in the second direction perpendicular to the first direction, and the second stepped pattern causes the step size of the third conductive sheet to increase as it extends in the second direction. This design allows for larger areas of the first and third conductive sheets, increasing the maximum current carrying capacity and improving heat dissipation.

[0007] Specifically, there are two IGBT units, which are spaced apart along the second direction. The second conductive sheets of the two IGBT units are positioned correspondingly in the second direction. The first conductive sheet of one IGBT unit and the third conductive sheet of the other IGBT unit are positioned correspondingly in the second direction. The areas of the first and second stepped patterns of the two IGBT units increase in size stepwise in the second direction toward the adjacent IGBT unit.

[0008] More specifically, a second conductive sheet of one IGBT unit extends from one end adjacent to another IGBT unit between a first conductive sheet of the IGBT unit and a third conductive sheet of the other IGBT unit, such that the second conductive sheet of one IGBT unit and the third conductive sheet of the other IGBT unit are spaced apart, and the CLIP member includes a third CLIP member soldered between the aforementioned spaced second and third conductive sheets.

[0009] Specifically, the first stepped pattern is a two-step pattern, and the second stepped pattern is a three-step pattern.

[0010] Preferably, there are two IGBT units, which are spaced apart along a second direction perpendicular to the first direction. The second conductive plates of both IGBT units extend from the side furthest from the other IGBT unit along the second direction to corresponding positions of the first and third conductive plates, forming a T-shaped expansion structure at the end of the second conductive plate. This design not only effectively increases the length of the second conductive plate but also facilitates soldering to external conductive terminals.

[0011] Preferably, the conductive sheet is a copper-clad laminate, and the CLIP component is a bent copper sheet component.

[0012] Preferably, the substrate of the MOSFET chip is a silicon carbide substrate, which has good performance.

[0013] Preferably, the first and third conductive sheets are provided with at least one welding positioning hole, which is used for welding electrical connection pieces that are electrically connected to the conductive terminals. This not only strengthens the bonding force between the first and third conductive sheets and the substrate and makes the welding more stable, but also increases the connection stability between the conductive terminals and the conductive sheets.

[0014] This utility model also provides an IGBT device, including a housing, an IGBT module installed in the housing, and conductive terminals installed on the housing. The IGBT module is the IGBT module described above, and the conductive terminals are electrically connected to the IGBT module.

[0015] Compared with existing technologies, this invention uses a MOSFET chip that integrates an IGBT chip and a diode chip. This eliminates the need for a clip to electrically connect the IGBT chip and diode chip during IGBT module packaging, saving assembly and packaging processes, reducing packaging difficulty, and increasing yield. The area of ​​the second conductive plate is larger than that of the first and third conductive plates. In this invention, the second conductive plate, which is used to solder the MOSFET chip, can withstand a larger current and has better heat dissipation. Attached Figure Description

[0016] Figure 1 This is a perspective view of the IGBT device of this utility model.

[0017] Figure 2 This is an exploded view of the IGBT device of this utility model.

[0018] Figure 3 This is a perspective view of the IGBT module of this utility model.

[0019] Figure 4 This is a structural diagram of the conductive sheet in the IGBT module of this utility model. Detailed Implementation

[0020] To explain in detail the technical content, structural features, objectives, and effects of this utility model, the following description is provided in conjunction with the embodiments and accompanying drawings.

[0021] refer to Figure 1 and Figure 2 This utility model discloses an IGBT device, including a housing 10, an IGBT module 100 installed inside the housing 10, and conductive terminals installed on the housing 10, wherein the conductive terminals are electrically connected to the IGBT module 100. The housing 10 includes a base plate 12 and an upper shell 11, and the conductive terminals include power terminals 13 and signal terminals 14.

[0022] refer to Figure 3 and Figure 4The IGBT module 100 includes a substrate 15 and one or more IGBT units 101 disposed on the substrate 15. Each IGBT unit 101 includes a conductive sheet 20 disposed on the substrate 15, a MOSFET chip 40 soldered to the conductive sheet 20, and a CLIP component 30 soldered between the MOSFET chip 40 and the conductive sheet 20. The MOSFET chip 40 (metal-oxide-semiconductor field-effect transistor chip) integrates a diode chip (e.g., an FRD chip - fast recovery diode chip, or a SiC SBD - silicon carbide Schottky barrier diode chip), which is equivalent to a structure in which an IGBT chip and a diode chip are integrated together.

[0023] refer to Figure 3 and Figure 4 The conductive sheet 20 includes a first conductive sheet 21, a second conductive sheet 22, and a third conductive sheet 23 arranged sequentially at intervals along a first direction. The area of ​​the second conductive sheet 22 is larger than the areas of the first conductive sheet 21 and the third conductive sheet 23. The drain (D) electrode of the MOSFET chip 40 is soldered to the second conductive sheet 22. The CLIP component 30 includes a first CLIP component 31 soldered between the source (S) electrode of the MOSFET chip 40 and the third conductive sheet 23, and a second CLIP component 32 soldered between the gate (G) electrode of the MOSFET chip 40 and the first conductive sheet 21. In this embodiment, the first direction is the left-right direction. The conductive sheet 20 is a copper-clad laminate, and the CLIP component 30 is a bent copper sheet. The substrate of the MOSFET chip 40 is a silicon carbide substrate, which has good performance.

[0024] refer to Figure 4 The second conductive sheet 22 has a first stepped pattern that matches the shape between its first side in the first direction and the corresponding side of the first conductive sheet 21, and a second stepped pattern that matches the shape between its second side in the first direction and the corresponding side of the third conductive sheet 23. The first and second sides of the second conductive sheet 22 are opposite sides along the first direction. The first stepped pattern makes the area of ​​the first conductive sheet 21 increase in size when extended in the second direction perpendicular to the first direction, and the second stepped pattern makes the area of ​​the third conductive sheet 23 increase in size when extended in the second direction. The stepped patterns between the second conductive sheet 22 and the first and third conductive sheets 21 and 23 make the areas of the first and third conductive sheets 21 and 23 larger, increasing the maximum current carrying capacity and heat dissipation rate. In this embodiment, the second direction is the front-back direction. The first stepped pattern is a two-step pattern, and the second stepped pattern is a three-step pattern.

[0025] Preferably, the IGBT module 100 includes two IGBT units 101, which are spaced apart along a second direction. The second conductive sheets 22 of the two IGBT units 101 are positioned correspondingly in the second direction. The first conductive sheet 21 of one IGBT unit 101 and the third conductive sheet 23 of the other IGBT unit 101 are positioned correspondingly in the second direction. The areas of the first and second stepped patterns of the two IGBT units 101 increase in a stepped manner in the second direction toward the adjacent IGBT unit 101.

[0026] Specifically, the second conductive sheet 22 of one IGBT unit 101 extends from one end adjacent to another IGBT unit 101 between the first conductive sheet 21 of the IGBT unit 101 and the third conductive sheet 23 of the other IGBT unit 101, so that the second conductive sheet 22 of one IGBT unit 101 and the third conductive sheet 23 of the other IGBT unit 101 are spaced apart. The CLIP component includes a third CLIP component 34 soldered between the spaced second conductive sheet 22 and the third conductive sheet 23.

[0027] In this embodiment, there are two IGBT units 101. The two IGBT units 101 are arranged at a distance along a second direction perpendicular to the first direction. The second conductive sheets 22 of the two IGBT units 101 extend from the side away from the other IGBT unit 101 along the second direction to the corresponding positions of the first conductive sheet 21 and the third conductive sheet 23, so as to form a T-shaped expansion structure at the end of the second conductive sheet 22. This not only effectively increases the length of the second conductive sheet 22, but also facilitates welding to external conductive terminals.

[0028] Preferably, at least one welding positioning hole 201 is provided on the first conductive sheet 21 and the second conductive sheet 22. The welding positioning hole 201 is used to weld the electrical connection piece 50 that is electrically connected to the conductive terminal, so that the bonding force between the first conductive sheet 21 and the third conductive sheet 23 and the substrate 15 is stronger and the welding is more stable. Specifically, the welding positioning hole 201 is used to weld the electrical connection piece 50 that is electrically connected to the communication terminal 14. The communication terminal 14 is electrically connected to the electrical connection piece 50 through a wire, gold wire or metal strip. The electrical connection piece 50 is welded to the conductive sheet at the position with the welding positioning hole 201. The bottom foot of the power terminal 13 is directly welded to the conductive sheet 20. Specifically, the conductive sheet also includes a fourth conductive sheet 24. The fourth conductive sheet 24 is located on the side of the first conductive sheet 21 of one IGBT unit 101 adjacent to another IGBT unit 101. One bottom foot of the power terminal 13 is welded to the third conductive sheet 23 of the other IGBT unit 101, and the other bottom foot is welded to the fourth conductive sheet 24 that is spaced opposite to the third conductive sheet 23.

[0029] Compared with existing technologies, this invention uses a MOSFET chip 40 instead of an IGBT chip and a diode chip, eliminating the need for a clip to electrically connect the IGBT chip and diode chip when packaging the IGBT module 100. This saves on assembly and packaging processes, reduces packaging difficulty, and increases yield. The area of ​​the second conductive sheet 22 is larger than that of the first conductive sheet 21 and the third conductive sheet 23, allowing the second conductive sheet 22, which is used to solder the MOSFET chip 40, to withstand a larger current and provides better heat dissipation.

[0030] The above-disclosed embodiments are merely preferred embodiments of the present utility model and should not be construed as limiting the scope of the present utility model. Therefore, any equivalent variations made in accordance with the scope of the present utility model shall still fall within the scope of the present utility model.

Claims

1. An IGBT module with a MOSFET chip, characterized in that: It includes one or more IGBT units, each of the IGBT units including a substrate, a conductive sheet disposed on the substrate, a MOSFET chip soldered to the conductive sheet, and a CLIP component soldered between the MOSFET chip and the conductive sheet; The conductive sheet includes a first conductive sheet, a second conductive sheet, and a third conductive sheet arranged at intervals along a first direction, wherein the area of ​​the second conductive sheet is larger than the area of ​​the first conductive sheet and the third conductive sheet respectively. The MOSFET chip integrates a diode chip. The drain (D) terminal of the MOSFET chip is soldered to the second conductive plate. The CLIP component includes a first CLIP component soldered between the source (S) terminal of the MOSFET chip and the third conductive plate, and a second CLIP component soldered between the gate (G) terminal of the MOSFET chip and the first conductive plate.

2. The IGBT module with a MOSFET chip as described in claim 1, characterized in that: The second conductive sheet has a first stepped pattern that matches the shape between its first side in the first direction and the corresponding side of the first conductive sheet, and a second stepped pattern that matches the shape between its second side in the first direction and the corresponding side of the third conductive sheet. The first side and the second side of the second conductive sheet are opposite sides along the first direction. The first stepped pattern causes the step size to increase when the area of ​​the first conductive sheet extends in the second direction perpendicular to the first direction, and the second stepped pattern causes the step size to increase when the area of ​​the third conductive sheet extends in the second direction.

3. The IGBT module with a MOSFET chip as described in claim 2, characterized in that: The IGBT unit has two parts, which are spaced apart along the second direction. The second conductive sheets of the two IGBT units are positioned correspondingly in the second direction. The first conductive sheet of one IGBT unit and the third conductive sheet of the other IGBT unit are positioned correspondingly in the second direction. The areas of the first and second stepped patterns of the two IGBT units increase in size stepwise in the second direction toward the adjacent IGBT unit.

4. The IGBT module with a MOSFET chip as described in claim 3, characterized in that: A second conductive sheet of one IGBT cell extends from one end adjacent to another IGBT cell between a first conductive sheet of the IGBT cell and a third conductive sheet of the other IGBT cell, such that the second conductive sheet of one IGBT cell and the third conductive sheet of the other IGBT cell are spaced apart. The CLIP component includes a third CLIP component soldered between the spaced-apart second and third conductive sheets.

5. The IGBT module with a MOSFET chip as described in claim 2, characterized in that: The first stepped pattern is a two-step pattern, and the second stepped pattern is a three-step pattern.

6. The IGBT module with a MOSFET chip as described in claim 1, characterized in that: There are two IGBT units, which are spaced apart along a second direction perpendicular to the first direction. The second conductive plates of the two IGBT units extend from the side away from the other IGBT unit along the second direction to the corresponding positions of the first and third conductive plates, so as to form a T-shaped expansion structure at the end of the second conductive plate.

7. The IGBT module with a MOSFET chip as described in claim 1, characterized in that: The conductive sheet is a copper-clad sheet, and the CLIP component is a bent copper sheet component.

8. The IGBT module with a MOSFET chip as described in claim 1, characterized in that: The substrate of the MOSFET chip is a silicon carbide substrate.

9. The IGBT module with a MOSFET chip as described in claim 1, characterized in that: The first conductive sheet and the third conductive sheet are provided with at least one welding positioning hole, which is used to weld the electrical connection sheet that is electrically connected to the conductive terminal.

10. An IGBT device, characterized in that: The device includes a housing, an IGBT module mounted inside the housing, and conductive terminals mounted on the housing. The IGBT module is an IGBT module with a MOSFET chip as described in any one of claims 1-9, and the conductive terminals are electrically connected to the IGBT module.

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