A packaging material and photovoltaic module

Abstract

The application discloses a packaging material, which comprises a weather-resistant layer, a supporting layer, a conductive layer and a buffer layer. The supporting layer is connected to one side of the weather-resistant layer, and the conductive layer is connected to the side of the supporting layer away from the weather-resistant layer. The conductive layer is a patterned layer, and the conductive layer comprises a hollow part. The projection of the hollow part on the supporting layer is defined as a hollow projection. The buffer layer is a patterned layer, and the buffer layer is configured to be at least partially inlaid in the hollow part of the conductive layer. The buffer layer is configured to be at least partially protruded from the conductive layer. The projection of the buffer layer on the supporting layer is defined as a buffer projection. The hollow projection and the buffer projection substantially coincide. By using the packaging material to package a photovoltaic module, the structure of the photovoltaic module and the process complexity during packaging can be simplified.

Description

Technical Field

[0001] This application relates to the field of photovoltaic technology, and in particular to an encapsulation material and a photovoltaic module. Background Technology

[0002] In recent years, solar energy has received increasing attention as a clean energy source. With the continuous advancement of photovoltaic cell and module technology and the expanding application scenarios, the requirements for the performance of encapsulation materials are also showing a more diversified trend.

[0003] In the field of photovoltaic building applications, such as flat roofs, pitched roofs, curtain walls, and canopies, lightweight components are gradually becoming an important development direction due to the limitations of building load-bearing capacity. These components use polymer materials to replace traditional inorganic glass to achieve significant weight reduction. Currently, commonly used materials for lightweight front panels mainly include polymers such as ETFE, acrylic resin, epoxy resin, PET, fluoropolymer films, and fluoropolymer coatings. The fabrication of lightweight components involves sequentially stacking the front panel, front film, cells connected in series with metal wires, back film, and backsheet, followed by lamination using a laminator. The overall process is quite complex.

[0004] Meanwhile, high-efficiency cell technologies such as PERC, TOPCon, HJT, BC, perovskite tandem, and back-contact solar cells have developed rapidly, increasing cell conversion efficiency from 23% to 33%, which also places higher demands on the performance of encapsulation materials. Not only is excellent weather resistance required, but also optimized cell connection methods and encapsulation schemes to ensure the long-term stability of cell performance. Taking back-contact solar cells as an example, they typically achieve conductive interconnection through a conductive backsheet to form a complete photovoltaic module. However, existing conductive backsheet technologies require filling the openings with conductive material, resulting in complex processes and poor stability and reliability.

[0005] Therefore, how to reduce the complexity of photovoltaic module packaging processes while ensuring the basic performance of packaging materials is a technical problem that urgently needs to be solved in this field. Utility Model Content

[0006] In order to overcome the shortcomings of the prior art, the purpose of this application is to provide an encapsulation material and a photovoltaic module, which reduces the complexity of the encapsulation process of photovoltaic modules through the encapsulation material.

[0007] To achieve the above objectives, this application adopts the following technical solution:

[0008] An encapsulation material for encapsulating photovoltaic modules includes a weather-resistant layer, a support layer, a conductive layer, and a buffer layer. The support layer is connected to one side of the weather-resistant layer. The conductive layer is a patterned layer connected to the side of the support layer away from the weather-resistant layer. The conductive layer includes cutouts, and the projection of the cutouts onto the support layer is defined as a cutout projection. The buffer layer is a patterned layer configured to be at least partially embedded in the cutouts and at least partially protruding from the conductive layer. The projection of the buffer layer onto the support layer is defined as a buffer projection, and the cutout projection and the buffer projection substantially coincide.

[0009] Furthermore, the conductive layer includes a first conductive portion and a second conductive portion; the first conductive portion and the second conductive portion are strip-shaped, the width of the first conductive portion ranges from 0.003 mm to 0.1 mm, the width of the second conductive portion ranges from 0.1 mm to 10 mm, and the length of the second conductive portion ranges from 200 mm to 1000 mm.

[0010] Furthermore, the conductive layer includes a first conductive layer disposed close to the support layer and a second conductive layer disposed away from the support layer. The thickness of the first conductive layer ranges from 0.001 μm to 1 μm, and the surface roughness Ra of the first conductive layer ranges from 0.5 μm to 5 μm. The thickness of the second conductive layer ranges from 0.5 μm to 50 μm, and the surface roughness of the second conductive layer ranges from 0 μm to 2 μm.

[0011] Furthermore, the conductive layer is made of at least one of copper, aluminum, indium oxide, or tin oxide.

[0012] Furthermore, the thickness of the buffer layer ranges from 10 μm to 450 μm; the thickness of the support layer ranges from 50 μm to 450 μm; and the thickness of the weather-resistant layer ranges from 3 μm to 150 μm.

[0013] Furthermore, the encapsulation material also includes a base coating layer located on at least one side of the support layer, the base coating layer having a thickness ranging from 0.5 μm to 5 μm.

[0014] Furthermore, the buffer layer is one of the following: polyethylene layer, polypropylene layer, polybutene layer, polyisobutylene layer, polyethylene vinyl acetate layer, ethylene-octene copolymer layer, ethylene-butene copolymer layer, ethylene-norbornene copolymer layer, isobutylene-isoprene copolymer layer, or butene-polyvinyl butyral layer.

[0015] Furthermore, the support layer is one of the following: polyethylene terephthalate layer, polyethylene naphthalate layer, polypropylene layer, polycarbonate layer, ethylene-propylene copolymer layer, or ethylene-cycloolefin copolymer layer.

[0016] Furthermore, the weather-resistant layer is one of the following: fluoropolymer resin layer, polycarbonate resin layer, polyvinyl alcohol resin layer, acrylic resin layer, alkyd resin layer, polyester resin layer, polyurethane resin layer, epoxy resin layer, phenolic resin layer, or terpene resin layer.

[0017] Furthermore, the transmittance of the encapsulation material at a wavelength of 700 nm is greater than or equal to 85%, the transmittance of the conductive layer at a wavelength of 700 nm is greater than or equal to 90%, and the transmittance of the buffer layer at a wavelength of 700 nm is greater than or equal to 90%.

[0018] Furthermore, the volume resistivity of the encapsulation material is greater than or equal to 10. 14 Ω·cm, water vapor transmission rate less than or equal to 0.5 g / m 2 • After 24 hours, the peel force between each layer is greater than or equal to 5 N / cm.

[0019] Furthermore, the reflectivity of the encapsulation material at a wavelength of 800 nm is higher than 90%.

[0020] To achieve the above objectives, this application adopts the following technical solution:

[0021] A photovoltaic module comprising the aforementioned encapsulation material.

[0022] The aforementioned encapsulation material achieves electrical connections between solar cells by using a patterned conductive layer, thereby avoiding the need for additional metal materials between the cells. This reduces the complexity of the photovoltaic module encapsulation process and prevents cell breakage caused by rigid metal materials between the cells. Simultaneously, the buffer layer is also patterned. The buffer layer and the conductive layer work together to protect the cells, reducing the amount of encapsulating film used and further simplifying the photovoltaic module encapsulation process. Attached Figure Description

[0023] Figure 1 This is a structural diagram of a photovoltaic module provided in an embodiment of this application.

[0024] Figure 2 This is a structural diagram of the first encapsulation material provided in the embodiments of this application.

[0025] Figure 3 This is a structural diagram of the conductive layer provided in an embodiment of this application.

[0026] Figure 4 This is a structural diagram of the second type of packaging material provided in an embodiment of this application.

[0027] Figure 5 This is a structural diagram of the third type of packaging material provided in the embodiments of this application.

[0028] Figure 6 This is a structural diagram of the fourth type of packaging material provided in the embodiments of this application.

[0029] Figure 7 This is a structural diagram of the fifth packaging material provided in the embodiments of this application.

[0030] In the diagram: 100, photovoltaic module; 11, front substrate; 12, cell string layer; 13, back substrate; 200, encapsulation material; 21, weather-resistant layer; 22, support layer; 23, conductive layer; 231, cutout; 232, first conductive part; 233, second conductive part; 234, first conductive layer; 235, second conductive layer; 24, buffer layer; 25, base coating. Detailed Implementation

[0031] To enable those skilled in the art to better understand the present application, the technical solutions in specific embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.

[0032] It should be noted that the terms "first," "second," and similar terms used in this application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms "an" or "a" and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. Unless otherwise stated, the terms "comprising" and similar terms mean that the elements or objects preceding "comprising" cover the elements or objects listed after "comprising" and their equivalents, and do not exclude other elements or objects. The terms "connected" or "linked" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0033] The singular forms “a,” “the,” and “the” used in this application specification and appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise.

[0034] like Figure 1 As shown, this application provides a photovoltaic module 100, which converts solar energy into electrical energy and outputs the converted electrical energy. The photovoltaic module 100 includes a front substrate 11, a cell string layer 12, and a rear substrate 13. The front substrate 11 and the rear substrate 13 encapsulate the cell string layer 12 to form a complete photovoltaic module 100, and also protect the cell string layer 12. At least one of the front substrate 11 or the rear substrate 13 adopts a method such as... Figure 2The encapsulation material 200 shown is as follows. Those skilled in the art will know that in conventional photovoltaic modules, when photovoltaic glass or a photovoltaic backsheet is used as the front substrate 11 or the back substrate 13, a photovoltaic encapsulant film (not shown) needs to be provided between the front substrate 11 and the cell string layer 12, and between the back substrate 13 and the cell string layer 12. When the front substrate 11 uses... Figure 2 When the encapsulation material 200 shown is used, the encapsulation film between the front substrate 11 and the cell string layer 12 in the photovoltaic module 100 can be omitted accordingly. When the back substrate 13 adopts, as shown in the figure, the encapsulation film between the front substrate 11 and the cell string layer 12 in the photovoltaic module 100 can be omitted accordingly. Figure 2 When the encapsulation material 200 shown is used, the encapsulation film between the back substrate 13 and the cell string layer 12 in the photovoltaic module 100 can be omitted accordingly.

[0035] like Figure 2 As shown, the encapsulation material 200 includes a weather-resistant layer 21, a support layer 22, a conductive layer 23, and a buffer layer 24. The weather-resistant layer 21 is located on the outermost side of the encapsulation material 200 and is used to prevent ultraviolet radiation from damaging the support layer 22, conductive layer 23, and buffer layer 24. The support layer 22 is connected to one side of the weather-resistant layer 21 and forms the basic framework of the encapsulation material 200, supporting the weather-resistant layer 21, conductive layer 23, and buffer layer 24. The conductive layer 23 is connected to the side of the support layer 22 away from the weather-resistant layer 21 and is used to connect with the solar cells in the cell string layer 12, enabling electrical connection between the cells. At least a portion of the buffer layer 24 is bonded to the conductive layer 23. The buffer layer 24 primarily serves to bond the encapsulation material 200 and the cell string layer 12, forming a complete whole within the photovoltaic module 100. Meanwhile, the buffer layer 24 can also fill the gap between the conductive layer 23 and the solar cell, thereby bonding the conductive layer 23 and the solar cell to improve the stability of the electrical connection in the photovoltaic module 100.

[0036] The conductive layer 23 is a patterned layer, forming corresponding conductive patterns. It can essentially replace the interconnecting strips and busbars in the photovoltaic module 100, enabling electrical connections between the cells in the photovoltaic module 100. A cutout 231 is formed in the conductive layer 23. The cutout 231 separates adjacent conductive structures in the conductive layer 23, preventing short circuits between adjacent conductive structures and improving the operational stability of the photovoltaic module 100. The buffer layer 24 is also a patterned layer, filling the cutout 231 in the conductive layer 23 and connecting to the support layer 22, forming a pattern substantially the same as the cutout 231. At least a portion of the buffer layer 24 is embedded in the cutout 231, while the remaining portion of the buffer layer 24 is configured to protrude from the conductive layer 23. The buffer layer 24 separates adjacent structures in the conductive layer 23, preventing short circuits between conductive layers 23 and maintaining the normal operation of the photovoltaic module 100. Specifically, the projection of the hollow part 231 onto the support layer 22 is defined as the hollow projection, and the projection of the buffer layer 24 onto the support layer 22 is defined as the buffer projection. The hollow projection and the buffer projection basically coincide.

[0037] By setting the conductive layer 23 as a patterned layer, the traditional interconnecting strips and busbars in the photovoltaic module can be replaced by the conductive layer 23 to achieve electrical connection of the cells in the photovoltaic module 100. Simultaneously, by using the aforementioned encapsulation material 200, at least the encapsulating film on the side using the encapsulation material can be omitted, reducing the amount of encapsulating film used, simplifying the structure and encapsulation process of the photovoltaic module 100, and lowering the manufacturing cost of the photovoltaic module 100. Furthermore, the interlocking arrangement of the conductive layer 23 and the buffer layer 24 can improve the compactness of the conductive layer 23 and the buffer layer 24, reduce the thickness of the encapsulation material 200, lower the cost of the encapsulation material 200, and reduce the overall thickness of the photovoltaic module 100.

[0038] Encapsulation material 200 with a volume resistivity greater than or equal to 10 14 Ω·cm, water vapor transmission rate less than or equal to 0.5 g / m 2• The peel force between each layer is greater than or equal to 5 N / cm over 24 hours. The encapsulation material 200 provided in this application meets the above technical requirements. The volume resistivity of the encapsulation material 200 gives it good insulation properties, reducing the possibility of short circuits in the photovoltaic module 100. Simultaneously, reducing the water vapor transmission rate of the encapsulation material 200 reduces the intrusion of water vapor into its interior, thereby reducing the degree of corrosion of the internal structure and components of the photovoltaic module 100 and extending its service life. Furthermore, the peel force between the layers of the encapsulation material 200 prevents it from detaching or peeling off during assembly or use of the photovoltaic module 100, thus improving its service life. The volume resistivity test environment is controlled at a temperature of 23℃±2℃ and a relative humidity of 50%±5%RH, and the water vapor transmission rate test environment is controlled at a temperature of 38℃ and a relative humidity of 90%RH. The interlayer peel force was measured as follows: Glass / 2 layers of adhesive film / backsheet were stacked sequentially in a 300mm×150mm pattern. After lamination, the flexible backsheet / adhesive film layers were cut into 10mm±0.5mm samples with a 5mm gap in the width direction to test the adhesion between EVA and glass. The tensile testing machine was set to a tensile speed of 100±10mm / min to test the peel force F between the adhesive film and glass. Three replicates were required for each test sample.

[0039] like Figure 3 As shown, in one embodiment, the conductive layer 23 includes a first conductive portion 232 and a second conductive portion 233, which are strip-shaped. The first conductive portion 232 is used to realize the electrical connection between adjacent solar cells, and the second conductive portion 233 is used to realize the electrical connection between adjacent solar cell strings. Through the above arrangement, the first conductive portion 232 and the second conductive portion 233 can realize the circuit connection between each solar cell in the photovoltaic module 100, thereby maintaining the circuit conduction of the photovoltaic module 100 during operation.

[0040] In this embodiment, the width of the first conductive portion 232 ranges from 0.003 mm to 0.1 mm, specifically from 0.008 mm to 0.08 mm, and more specifically from 0.01 mm to 0.05 mm. This configuration ensures sufficient contact area between the first conductive portion 232 and the grid lines of the solar cell, allowing for a thorough connection between the first conductive portion 232 and the grid lines, thereby improving the stability of the connection between the conductive layer 23 and the solar cell. Simultaneously, it avoids excessive width of the first conductive portion 232, reducing excessive shading of the solar cell and thus improving the overall photoelectric conversion efficiency of the solar cell, ultimately enhancing its working efficiency.

[0041] Furthermore, the width of the second conductive portion 233 ranges from 0.1 mm to 10 mm. Specifically, the width of the second conductive portion 233 ranges from 0.5 mm to 8 mm. More specifically, the width of the second conductive portion 233 ranges from 1 mm to 5 mm. Through the above configuration, the current transmission efficiency of the second conductive portion 233 can be improved, thereby improving the conductivity efficiency when the conductive layer 23 is connected to the solar cell, which is beneficial to improving the operating efficiency of the photovoltaic module 100.

[0042] Furthermore, the length of the second conductive portion 233 ranges from 200mm to 1000mm. Specifically, the length of the second conductive portion 233 ranges from 300mm to 900mm. More specifically, the length of the second conductive portion 233 ranges from 400mm to 800mm. Since different types of battery cells have different sizes, and the circuit connection methods between the conductive layer 23 and the battery cell differ in encapsulation materials 200 of different sizes, the above-described configuration allows the length of the second conductive portion 233 to be set according to the actual requirements of the encapsulation material 200. This allows for the use of second conductive portions 233 of different lengths to connect the first conductive portion 232 and the battery cell, thus satisfying different circuit connection methods between the conductive layer 23 and the battery cell.

[0043] like Figure 4 As shown, in one embodiment, the conductive layer 23 includes a first conductive layer 234 disposed near the support layer 22 and a second conductive layer 235 disposed away from the support layer 22. With this arrangement, in the conductive layer 23, the first conductive layer 234 is responsible for achieving better adhesion with the support layer 22, while the second layer is responsible for achieving better conductivity, so that the conductive layer 23 as a whole has both better adhesion to the support layer 22 and better overall conductivity.

[0044] In this embodiment, the thickness of the first conductive layer 234 ranges from 0.001 μm to 1 μm, and the thickness of the second conductive layer 235 ranges from 0.5 μm to 50 μm. Specifically, the thickness of the first conductive layer 234 ranges from 0.005 μm to 0.5 μm, and the thickness of the second conductive layer 235 ranges from 5 μm to 40 μm. More specifically, the thickness of the first conductive layer 234 ranges from 0.01 μm to 0.1 μm, and the thickness of the second conductive layer 235 ranges from 10 μm to 30 μm. By reducing the thickness of the first conductive layer 234 and the second conductive layer 235, the amount of material used in the first conductive layer 234 and the second conductive layer 235 can be reduced, thereby reducing the manufacturing cost of the first conductive layer 234 and the second conductive layer 235, and thus reducing the manufacturing cost of the encapsulation material 200. Furthermore, this design avoids the first conductive layer 234 and the second conductive layer 235 being too thick, which would affect the overall thickness of the encapsulation material 200 and thus facilitate the lightweighting of the photovoltaic module 100. The thinner first conductive layer 234 better adapts to the surface morphology of the support layer 22, resulting in better adhesion between it and the support layer 22, as well as better bonding with the second conductive layer 235. In addition, the first conductive layer 234 has a relatively high manufacturing cost; making it thinner than the second conductive layer reduces the overall manufacturing cost of the conductive layer 23.

[0045] The surface roughness Ra of the first conductive layer 234 ranges from 0.5 μm to 5 μm, and the surface roughness of the second conductive layer 235 ranges from 0 μm to 2 μm. Specifically, the surface roughness Ra of the first conductive layer 234 ranges from 1 μm to 4 μm, and the surface roughness of the second conductive layer 235 ranges from 0.5 μm to 2 μm. More specifically, the surface roughness Ra of the first conductive layer 234 ranges from 1.5 μm to 3 μm, and the surface roughness of the second conductive layer 235 ranges from 1 μm to 2 μm. By increasing the surface roughness of the first conductive layer 234, the bonding strength between the first conductive layer 234 and the support layer 22 and the second conductive layer 235 can be increased, thereby improving the structural strength inside the conductive layer 23 and the bonding force between the conductive layer 23 and the support layer 22, thus preventing detachment or peeling after long-term use. Simultaneously, it avoids the problem of poor bonding and high resistance between the first conductive layer 234 and the second conductive layer 235 due to excessively large surface roughness Ra of the first conductive layer 234, thereby improving the conductivity efficiency of the conductive layer 23 and thus improving the working efficiency of the photovoltaic module 100. Similarly, the surface roughness of the second conductive layer 235 can improve the bonding force between the second conductive layer 235 and the first conductive layer 234, thereby improving the structural strength of the conductive layer 23. In addition, the first conductive layer 234 has a larger roughness than the second conductive layer 235. The larger roughness of the first conductive layer 234 can improve the adhesion of the first conductive layer 234 and enhance the bonding ability with the support layer 22 and the second conductive layer 235. The second conductive layer 235 needs to play a key conductive role, and its smaller and smoother surface roughness can improve the conductivity between the second conductive layer 235 and the conductive structure on the surface of the cell string layer 12.

[0046] In one implementation, the conductive layer 23 is made of at least one of copper, aluminum, indium oxide, or tin oxide. Copper has the characteristics of high conductivity and low cost, which can balance the manufacturing cost of the conductive layer 23 and improve its conductivity. Aluminum has the characteristics of low cost and high reflectivity, which can increase the optical path, allowing the solar cell to absorb light a second time, thereby improving the working performance of the solar cell. Indium oxide has the characteristics of high transmittance and high conductivity. Using indium oxide as the manufacturing material of the front substrate 11 can improve the transmittance of the front substrate 11, thereby improving the photoelectric conversion efficiency of the photovoltaic module 100. Tin oxide has the characteristics of high conductivity and high stability, which can improve the stability of the conductive layer 23 during operation. Therefore, through the above settings, the conductive layer 23 can be manufactured with a suitable material according to the actual usage requirements of the conductive layer 23 to meet the different performance requirements of the encapsulation material 200 for the conductive layer 23.

[0047] In one implementation, the thickness of the buffer layer 24 ranges from 10 μm to 450 μm. Specifically, the thickness of the buffer layer 24 ranges from 50 μm to 400 μm. More specifically, the thickness of the buffer layer 24 ranges from 100 μm to 400 μm. This configuration prevents adjacent solar cells from connecting to each other, thereby preventing short circuits in the solar cells of the photovoltaic module 100 during power-on, thus facilitating the normal operation of the photovoltaic module 100 when powered on.

[0048] Furthermore, the thickness of the support layer 22 ranges from 50 μm to 450 μm. Specifically, the thickness of the support layer 22 ranges from 100 μm to 400 μm. More specifically, the thickness of the support layer 22 ranges from 150 μm to 350 μm. Through the above configuration, the support layer 22 has sufficient thickness, thereby increasing its rigidity and thus improving the mechanical strength of the encapsulation material 200.

[0049] Furthermore, the thickness of the weather-resistant layer 21 ranges from 3 μm to 150 μm. Specifically, the thickness of the weather-resistant layer 21 ranges from 10 μm to 140 μm. More specifically, the thickness of the weather-resistant layer 21 ranges from 20 μm to 130 μm. Through the above configuration, the weather-resistant layer 21 has sufficient thickness, thereby improving its resistance to ultraviolet aging. This helps extend the resistance to ultraviolet aging of the weather-resistant layer 21, the support layer 22, the conductive layer 23, and the buffer layer 24, and ultimately extends the service life of the encapsulation material 200.

[0050] In one embodiment, the encapsulation material 200 further includes a base coating 25, which is located on at least one side of the support layer 22. This can be achieved as follows: Figure 5 The example shown shows that only the base layer 25 is provided between the support layer 22 and the conductive layer 23. Alternatively, it can be as follows: Figure 6 The example shown shows that only the primer layer 25 is provided between the weather-resistant layer 21 and the support layer 22, and it can also be as follows: Figure 7 As shown, a base coating 25 is provided on both sides of the support layer 22. The thickness of the base coating 25 ranges from 0.5 μm to 5 μm. Specifically, the thickness of the base coating 25 ranges from 1 μm to 4 μm. More specifically, the thickness of the base coating 25 ranges from 2 μm to 3 μm.

[0051] Therefore, through the above-described configuration, the base coating 25 can act as an adhesive between the support layer 22 and the conductive layer 23, thereby preventing detachment or peeling between the support layer 22 and the conductive layer 23 and thus improving the service life of the encapsulation material 200. Simultaneously, a thinner base coating 25 can reduce the amount of material used, thereby reducing the manufacturing cost of the encapsulation material 200.

[0052] In one embodiment, the buffer layer 24 is one of the following: a polyethylene layer, a polypropylene layer, a polybutene layer, a polyisobutylene layer, a polyethylene vinyl acetate layer, an ethylene-octene copolymer layer, an ethylene-butene copolymer layer, an ethylene-norbornene copolymer layer, an isobutylene-isoprene copolymer layer, or a butene-polyvinyl butyral layer. The buffer layer 24 can employ a layer structure with the above-mentioned components, or it can adopt other layer structures commonly used in encapsulation films in the photovoltaic module field. The layer structures with the above-mentioned components can effectively encapsulate the photovoltaic module and also prevent the parts of the photovoltaic module from detaching or peeling off after prolonged use.

[0053] In this embodiment, the support layer 22 is one of a polyethylene terephthalate layer, a polyethylene naphthalate layer, a polypropylene layer, a polycarbonate layer, an ethylene-propylene copolymer layer, or an ethylene-cyclic olefin copolymer layer. The layer structure of the above components has good mechanical strength, which can enhance the overall mechanical strength of the encapsulation material 200, thereby improving the impact resistance of the encapsulation material 200. It can also improve the support capacity of the support layer 22 for the photovoltaic module 100, thereby improving the mechanical strength of the photovoltaic module 100.

[0054] As one implementation method, the weather-resistant layer 21 is one of the following: a fluoropolymer resin layer, a polycarbonate resin layer, a polyvinyl alcohol resin layer, an acrylic resin layer, an alkyd resin layer, a polyester resin layer, a polyurethane resin layer, an epoxy resin layer, a phenolic resin layer, or a terpene resin layer. The weather-resistant layer 21 can adopt a layer structure with the above components, or a layer structure commonly used in the photovoltaic technology field. All of the above-mentioned layer structures have good UV resistance, which can enhance the protective effect of the weather-resistant layer 21 against UV aging of various parts of the photovoltaic module 100, thereby extending the service life of the photovoltaic module 100.

[0055] In one implementation, the light transmittance of the encapsulation material 100 at a wavelength of 700 nm is greater than or equal to 85%, the light transmittance of the region containing the conductive layer 23 at a wavelength of 700 nm is greater than or equal to 90%, and the light transmittance of the region containing the buffer layer 24 at a wavelength of 700 nm is greater than or equal to 90%. This configuration ensures the light transmittance of the encapsulation material 100, increases the amount of light irradiating the cell string 12, and improves the overall photoelectric conversion efficiency of the photovoltaic module 100, thereby enhancing the operating efficiency of the photovoltaic module 100. The encapsulation material 200 with the above characteristics is more suitable for use as the front substrate 11 material of the photovoltaic module 100.

[0056] In one implementation, the reflectivity of the encapsulation material 200 at a wavelength of 800 nm is higher than 90%. This configuration increases the optical path length of 800 nm wavelength light acting on the encapsulation material 200, allowing the reflected 800 nm wavelength light to be reabsorbed by the photovoltaic module 100 for photoelectric conversion, thereby improving the operating efficiency of the photovoltaic module 100. The encapsulation material 200 with these characteristics is more suitable for use as the back substrate 13 material of the photovoltaic module 100.

[0057] For example, in this application, encapsulation material 200 can be used as the front substrate 11, and the rear substrate 13 can be an existing substrate with a corresponding rear encapsulation film; alternatively, encapsulation material 200 can be used as the rear substrate 13, and the front substrate 11 can be an existing substrate with a corresponding front encapsulation film; alternatively, encapsulation material 200 can be used as both the front substrate 11 and the rear substrate 13, completely omitting the encapsulation film in the photovoltaic module. Through these configurations, encapsulation material 200 can partially or completely replace the existing substrate, thereby reducing the manufacturing cost of the photovoltaic module 100.

[0058] Finally, it should be noted that the above are only some preferred embodiments of this application and are not intended to limit this application. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An encapsulant material for encapsulating a photovoltaic module, characterized by, include: Weathering layer, A support layer, which is connected to one side of the weather-resistant layer. A conductive layer, which is a patterned layer, is connected to the side of the support layer away from the weather-resistant layer. The conductive layer includes a cutout portion, and the projection of the cutout portion onto the support layer is defined as the cutout projection. A buffer layer, which is a patterned layer, is configured to be at least partially embedded in the cutout portion and at least partially protruding from the conductive layer. The projection of the buffer layer onto the support layer is defined as the buffer projection, and the cutout projection and the buffer projection substantially coincide.

2. The encapsulation material according to claim 1, characterized in that: The conductive layer includes a first conductive portion and a second conductive portion; the first conductive portion and the second conductive portion are strip-shaped, the width of the first conductive portion ranges from 0.003 mm to 0.1 mm, the width of the second conductive portion ranges from 0.1 mm to 10 mm, and the length of the second conductive portion ranges from 200 mm to 1000 mm.

3. The encapsulation material according to claim 1, characterized in that: The conductive layer includes a first conductive layer disposed near the support layer and a second conductive layer disposed away from the support layer. The thickness of the first conductive layer ranges from 0.001 μm to 1 μm, and the surface roughness Ra of the first conductive layer ranges from 0.5 μm to 5 μm. The thickness of the second conductive layer ranges from 0.5 μm to 50 μm, and the surface roughness of the second conductive layer ranges from 0 μm to 2 μm.

4. The encapsulation material according to claim 1, characterized in that: The conductive layer is made of at least one of copper, aluminum, indium oxide, or tin oxide.

5. The encapsulation material according to claim 1, characterized in that: The thickness of the buffer layer ranges from 10 μm to 450 μm; The thickness of the support layer ranges from 50 μm to 450 μm; The thickness of the weather-resistant layer ranges from 3 μm to 150 μm.

6. The encapsulation material according to claim 1, characterized in that: The encapsulation material further includes a base coating layer located on at least one side of the support layer, the base coating layer having a thickness ranging from 0.5 μm to 5 μm.

7. The encapsulation material according to claim 1, characterized in that: The buffer layer is one of the following: a polyethylene layer, a polypropylene layer, a polybutene layer, a polyisobutylene layer, a polyethylene vinyl acetate layer, an ethylene-octene copolymer layer, an ethylene-butene copolymer layer, an ethylene-norbornene copolymer layer, an isobutylene-isoprene copolymer layer, or a butene-polyvinyl butyral layer. And / or, the support layer is one of polyethylene terephthalate layer, polyethylene naphthalate layer, polypropylene layer, polycarbonate layer, ethylene-propylene copolymer layer or ethylene-cycloolefin copolymer layer, and / or, the weather-resistant layer is one of fluoropolymer layer, polycarbonate resin layer, polyvinyl alcohol resin layer, acrylic resin layer, alkyd resin layer, polyester resin layer, polyurethane resin layer, epoxy resin layer, phenolic resin layer or terpene resin layer.

8. The encapsulation material according to claim 1, characterized in that: The light transmittance of the encapsulation material at a wavelength of 700 nm is greater than or equal to 85%, the light transmittance of the conductive layer at a wavelength of 700 nm is greater than or equal to 90%, and the light transmittance of the buffer layer at a wavelength of 700 nm is greater than or equal to 90%. and / or, the encapsulant material has a volume resistivity greater than or equal to 10 14 Ω-cm, a water vapor transmission rate less than or equal to 0.5 g / m 2 ·24h, a peel strength between layers greater than or equal to 5 N / cm.

9. The encapsulation material according to claim 1, characterized in that: The reflectivity of the encapsulation material at a wavelength of 800 nm is higher than 90%.

10. A photovoltaic module, characterized in that: The photovoltaic module includes the encapsulation material as described in any one of claims 1 to 9.

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