Ion source baffle and ion source etching apparatus

Abstract

The application provides an ion source baffle and an ion source etching device, which can reduce the use cost. The ion source baffle comprises a baffle support, wherein the baffle support has a middle through hole; and a baffle, wherein the baffle is connected with the baffle support, and the baffle covers the middle through hole in the depth direction of the middle through hole.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, specifically to an ion source baffle and an ion source etching apparatus. Background Technology

[0002] In the semiconductor field, IBS (Ion Beam Shaping) technology utilizes ion source baffles. These baffles prevent premature ion leakage. Before processes such as coating or etching begin, the baffles block ions generated by the ion source, preventing them from leaking prematurely into the processing area. This ensures the process starts at the appropriate time, improving process controllability. Ion source baffles also prevent sputtering damage or contamination of surrounding equipment components, such as vacuum chamber walls, other optical elements, or sensors, extending equipment lifespan. However, ion source baffles require replacement during use, resulting in high costs. Utility Model Content

[0003] This application provides an ion source baffle and an ion source etching device, which can reduce the cost of use.

[0004] To achieve the above objectives, this application provides an ion source etching apparatus, including a baffle support having a central through hole; and a baffle connected to the baffle support, the baffle covering the central through hole.

[0005] Optionally, the ion source baffle further includes a rotating bushing connected to the baffle, the rotating bushing having a first through hole through which it is connected to the baffle drive motor.

[0006] Optionally, the baffle support includes an annular frame and a baffle extension arm connected to the annular frame, and the rotating bushing is connected to the baffle extension arm.

[0007] Optionally, the rotating bushing includes a bushing body with the first through hole and a support arm connected to the bushing body, the support arm extending in a direction close to the baffle, and the support arm at least covering a portion of the baffle extension arm.

[0008] Optionally, the ion source baffle further includes a bushing cover plate, the rotating bushing having a first side close to the baffle support and a second side opposite to the first side, the bushing cover plate being located on the second side of the rotating bushing, and the bushing cover plate at least covering a portion of the support arm.

[0009] Optionally, at least one of the baffle and the baffle support, the rotating bushing and the baffle support, the support arm and the bushing support arm cover plate is connected by bolts.

[0010] Optionally, both the support arm and the bushing support arm cover are provided with two connecting holes distributed along their respective length directions, and a strip groove is also provided between the two connecting holes of the support arm.

[0011] Optionally, the baffle is made of metal or inorganic non-metal.

[0012] Optionally, the baffle support is made of a different material than the baffle.

[0013] This application also provides an ion source etching apparatus, including the ion source baffle described in any of the above claims.

[0014] The ion source baffle in this application is a separate baffle and baffle support. When replacing the ion source baffle in related processes, only the baffle needs to be replaced, reducing material waste and lowering operating costs. Furthermore, the baffle can be replaced with a baffle made of suitable material according to actual process requirements, thereby expanding the application range of the ion source etching equipment while further reducing costs. The ion source etching equipment provided in this application has the same technical effects as the aforementioned ion source baffle. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of an ion source baffle in an embodiment of this application;

[0016] Figure 2 for Figure 1 A schematic diagram of the structure of the ion source baffle from another perspective;

[0017] Figure 3 for Figure 2 A schematic diagram of the assembled ion source baffle;

[0018] Figure 4 This is a schematic diagram of the principle of an ion source etching device in one embodiment of this application.

[0019] The annotations in the attached figures are explained as follows:

[0020] 100 Ion source baffle; 200 Wafer stage; 300 Baffle drive motor; 400 Ion source;

[0021] 1. Baffle support; 11. Central through hole; 12. Annular frame; 12a. First fixing hole; 13. Baffle extension arm; 13a. First connecting hole; 13b. Second connecting hole; 131. Second through hole; 131a. First fastening hole;

[0022] 2. Rotary bushing; 21. Support arm; 21a. Third connecting hole; 21b. Fourth connecting hole; 21c. Strip groove; 22. Support base; 22a. Second fastening hole; 23. Shoulder; 24. First through hole;

[0023] 3. Shaft sleeve support arm cover plate; 31. Arc-shaped groove; 3a. First strip hole; 3b. Second strip hole;

[0024] 4 baffles; 4a second fixing hole. Detailed Implementation

[0025] To enable those skilled in the art to better understand the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0026] like Figure 1 and Figure 2 As shown, Figure 1 This is a schematic diagram of the structure of an ion source baffle in an embodiment of this application, and an exploded view of the ion source baffle; Figure 2 for Figure 1 A schematic diagram of the structure of the ion source baffle from another perspective.

[0027] The ion source baffle in this embodiment includes a baffle support 1, which includes an annular frame 12 and a baffle extension arm 13 connected to the annular frame 12. The annular frame 12 encloses and defines a central through hole 11, which is located in the middle of the annular frame 12. The baffle extension arm 13 is located on one side of the annular frame 12 and extends away from the annular frame 12. Figure 1 The middle annular frame 12 is circular, and the baffle extension arm 13 extends radially along the annular frame 12. The baffle extension arm 13 can be connected to the baffle drive motor 300 (shown in Figure 12) that drives the ion source baffle to rotate. Figure 4 The baffle support 1 is configured with an extension arm 13 for easy connection to the baffle drive motor 300. The structure of the baffle support 1 is as follows: Figure 1 As shown, the ion source baffle has a structure similar to a ping-pong paddle.

[0028] It is worth noting that this embodiment also includes a baffle 4, which is connected to the baffle support 1. The baffle 4 can cover the central through hole 11. When the baffle 4 is projected along the depth direction of the central through hole 11 of the baffle support 1, at least a portion of the projection of the baffle 4 coincides with the projection of the central through hole 11, that is, the projection of the central through hole 11 coincides with the projection of the baffle 4 or is located within the projection of the baffle 4. It can be seen that in this embodiment, the ion source baffle is supported and fixed by the annular frame 12 of the baffle support 1. That is, the annular baffle support 1 can save materials while playing a fixed support role, and the baffle extension arm 13 has a certain length, which can ensure the strength of the baffle support 1 and prevent it from breaking during use.

[0029] This embodiment does not limit the shape of the baffle 4. For example, a circular baffle 4 is used in this embodiment, matching the shape of the central through hole 11. The circular baffle 4 has good thermal stability and etching uniformity while being easy to process and saving material. For example, the annular frame 12 may be provided with uniformly distributed first fixing holes 12a, and the baffle 4 is provided with second fixing holes 4a corresponding to the first fixing holes 12a on the baffle support 1. The positions of the first fixing holes 12a and the second fixing holes 4a are as follows: Figure 1 As shown, the baffle support 1 and the baffle 4 can be fixedly connected using bolts. The connection structure between the baffle support 1 and the baffle 4 is as follows. Figure 3 As shown, Figure 3 for Figure 2 A schematic diagram of the assembled ion source baffle. Of course, baffle support 1 and baffle 4 can also be connected by other detachable methods to facilitate the removal of baffle support 1 and baffle 4.

[0030] In the related technical solutions mentioned in the background art, when the material is changed during PM (Preventive Maintenance) on the ion source etching equipment, the entire baffle needs to be replaced, which leads to an increase in cost. However, when using the ion source baffle in the embodiment of this application, when the material is changed during PM on the ion source etching equipment, only the baffle 4 of the ion source baffle in this embodiment needs to be replaced, while the baffle support 1 is retained. This reduces material waste and eliminates the need to disassemble the baffle support 1, thereby helping to reduce the operating cost of the equipment.

[0031] In some examples, the ion source baffle may also include a rotating sleeve 2, which includes a first through hole 24 extending through the rotating sleeve 2 along its thickness direction. This first through hole 24 connects to the shaft of the baffle drive motor 300, allowing the ion source baffle to rotate during operation. Specifically, the end of the baffle extension arm 13 furthest from the annular frame 12 has a second through hole 131, corresponding to the first through hole 24, i.e., they are coaxially arranged. When the shaft of the baffle drive motor 300 passes through the first through hole 24 of the rotating sleeve 2 and the second through hole 131 on the baffle support 1, the shaft of the baffle drive motor 300 engages with the first through hole 24 on the rotating sleeve 2, driving the ion source baffle 100 to rotate. Therefore, the rotating sleeve 2 facilitates the connection between the ion source baffle 100 and the baffle drive motor 300, and the connection is relatively reliable.

[0032] The rotating bushing 2 may include a bushing body with a through hole 24. Specifically, the bushing body includes a support base 22 and a shoulder 23. The support base 22 is located on one side of the baffle extension arm 13 of the baffle support 1 and is used to connect with the baffle support 1. The shoulder 23 is located on the support base 22 and extends a certain length along the thickness direction of the support base 22, used to position the rotating shaft of the baffle drive motor 300. This embodiment does not limit the shape of the bushing body. For example, in this embodiment, the cross-section of the bushing body is circular, saving material and facilitating connection. Since the second through hole 131 of the baffle extension arm 13 is surrounded by evenly distributed first fastening holes 131a, to facilitate the connection between the rotating bushing 2 and the baffle support 1, the support base 22 is also provided with second fastening holes 22a corresponding to the first fixing holes 12a on the baffle support 1. Bolts are used to connect the support base 22 of the rotating bushing 2 to the baffle support 1. The connection structure between the rotating bushing 2 and the baffle support 1 is as follows: Figure 3 As shown. The rotating bushing 2 and the support base 22 can also be connected in other ways, such as snap-fit, connecting pin connection, riveting, etc., and this embodiment does not impose specific limitations.

[0033] The rotating bushing 2 may also include a support arm 21 connected to the bushing body. The support arm 21 extends along the direction close to the baffle 4. The baffle extension arm 13 and the support arm 21 may also be connected by bolts. The support arm 21 at least covers a portion of the baffle extension arm 13. Specifically, the baffle extension arm 13 has a connecting hole at one end near the annular frame 12. Two connecting holes distributed along the length of the baffle extension arm 13 can be provided, namely a first connecting hole 13a and a second connecting hole 13b. The support arm 21 also has a third connecting hole 21a and a fourth connecting hole 21b distributed along the length of the support arm 21, corresponding to the first connecting hole 13a and the second connecting hole 13b on the baffle support 1, so that the support arm 21 of the rotating bushing 2 matches the baffle support 1 when connected. Providing two connecting holes provides a more reliable connection. It can be seen that providing one or other numbers of connecting holes is also possible, and the support arm 21 and the baffle extension arm 13 can also be connected in other ways.

[0034] In addition, a strip groove 21c extending along the length of the support arm 21 may be provided between the third connecting hole 21a and the fourth connecting hole 21b. The strip groove 21c penetrates the support arm 21 along the thickness direction of the support arm 21. The strip groove 21c is used to reduce the material of the support arm 21 and save material.

[0035] The support arm 21 has a certain thickness and is close to the baffle extension arm 13 to strengthen the baffle extension arm 13, thereby reducing or preventing the baffle extension arm 13 from breaking or being damaged due to insufficient strength.

[0036] In this embodiment, the ion source baffle may further include a bushing support arm cover plate 3. The side of the support arm 21 closest to the baffle support 1 along its thickness direction is defined as the first side, and the side opposite to the first side is defined as the second side. The bushing support arm cover plate 3 is located on the second side of the support arm 21, that is, the support arm 21 is located between the bushing support arm cover plate 3 and the baffle extension arm 13. The bushing support arm cover plate 3 at least covers a portion of the support arm 21. The support arm 21 extending from the rotating bushing 2 towards the baffle 4 is exposed to the plasma bombardment area. Therefore, adding the bushing support arm cover plate 3 can shield and protect the support arm 21 of the rotating bushing 2 from plasma bombardment. Thus, the bushing support arm cover plate 3 at least covers a portion of the rotating bushing support arm 21. Figure 3 The bushing support arm cover 3 almost completely covers the support arm 21. To meet the strength requirements of the baffle extension arm 13, the support arm 21 can be, for example, a metal part, while the bushing support arm cover 3 can be, for example, a plastic part, to protect and reduce bombardment damage.

[0037] The bushing support arm cover plate 3 includes an arc-shaped groove 31, which is located on the side of the bushing support arm cover plate 3 near the support seat 22 of the rotating bushing 2. It is used to engage with the generally cylindrical support seat 22 of the rotating bushing 2. That is, the arc-shaped groove 31 can engage with the outer peripheral wall of the support seat 22 so as to relatively fully cover the support arm 21 that is connected to the support seat 22, thereby reducing its risk of exposure to the plasma bombardment area.

[0038] The bushing support arm cover plate 3 and the support arm 21 can also be connected by bolts or other connection methods. For example, a first strip hole 3a and a second strip hole 3b can be provided on the other side of the bushing support arm cover plate 3. The first strip hole 3a and the second strip hole 3b extend along the length direction of the bushing support arm cover plate 3, and the first strip hole 3a and the second strip hole 3b of the bushing support arm cover plate 3 correspond to the third connecting hole 21a and the fourth connecting hole 21b on the rotating bushing 2. Bolts can be used to connect the bushing support arm cover plate 3, the rotating bushing 2, and the baffle support 1, such as... Figure 3 As shown. The first strip hole 3a and the second strip hole 3b are designed as elongated strip holes to facilitate adjustment of the bolt position and improve the flexibility of the connection.

[0039] This embodiment does not limit the material of the baffle 4, and the material of the baffle 4 can be selected according to different processes. For example, for processes with low requirements for metal contamination, a metal baffle 4 can be used, such as a molybdenum metal baffle. Even if metal particles are generated during use, the process requirements can still be met. The metal baffle 4 has the advantage of low cost. For another example, for processes with limited metal contamination but low requirements for graphite particle contamination, a graphite baffle 4 can also be used. Even if particles are generated during use, the process requirements can still be met. For processes with relatively high requirements for metal or graphite particle contamination, high-purity, high-hardness inorganic non-metallic materials that do not introduce metals or other impurities, such as silicon carbide, can be used. Silicon carbide is relatively expensive. It can be seen that, for different process requirements, the ion source baffle in this embodiment can be selected from baffle 4 made of different materials. When the process requirements change, the baffle 4 made of a suitable material can be directly replaced without disassembling the baffle support 1 and the baffle drive motor B, thereby expanding the application range of the ion source etching equipment.

[0040] The materials of baffle support 1 and baffle 4 can be different. For example, baffle support 1 can be made of metal or plastic to have better strength for installing and fixing baffle 4, while baffle 4 can be made of metal or inorganic non-metallic materials.

[0041] like Figure 4 As shown, Figure 4 This is a schematic diagram of the principle of an ion source etching device in one embodiment of this application.

[0042] This application also provides an ion source etching apparatus, including the ion source baffle 100 of any of the above embodiments, which has the same technical effects as the ion source baffle 100 in the above embodiments, and will not be described again.

[0043] The ion source etching equipment includes an ion source baffle 100, a wafer stage 200, an ion source 400, and a baffle drive motor 300. The working process of the ion source etching equipment is described below:

[0044] The baffle drive motor 300 drives the ion source baffle 100 to rotate, so that the ion source baffle 100 completely blocks the ion source 400. After blocking, the ion source 400 can be turned on.

[0045] After the ion source 400 stabilizes, the wafer stage 200 rotates the wafer until it is in the ion beam bombardment area. The specific rotation angle has different settings depending on the process. The baffle drive motor 300 also drives the ion source baffle 100 to rotate to the initial position, that is, no longer blocking the ion source 400, and the ion beam begins to etch the wafer.

[0046] After etching is completed, the baffle drive motor 300 drives the ion source baffle 100 to rotate to a position that can completely block the ion beam. The wafer stage 200 returns to its initial position, and the robotic arm takes away the etched wafer and places the next wafer on the wafer stage 200. The process is repeated according to the above procedure.

[0047] In this embodiment, the ion source baffle 100 is connected to the baffle drive motor 300. The baffle drive motor 300 drives the ion source baffle 100 to rotate, which can prevent premature ion leakage and sputtering damage or contamination to the equipment components around the ion source, and extend the service life of the equipment.

[0048] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of the claims of this application.

Claims

1. An ion source baffle, characterized in that, include: Baffle support (1), the baffle support (1) having a central through hole (11); Baffle (4), which is connected to baffle support (1), and covers the central through hole (11).

2. The ion source baffle according to claim 1, characterized in that, The ion source baffle also includes a rotating bushing (2) connected to the baffle support (1). The rotating bushing (2) includes a first through hole (24) for connecting to the baffle drive motor (B).

3. The ion source baffle according to claim 2, characterized in that, The baffle support (1) includes an annular frame (12) and a baffle extension arm (13) connected to the annular frame (12), and the rotating bushing (2) is connected to the baffle extension arm (13).

4. The ion source baffle according to claim 3, characterized in that, The rotating bushing (2) includes a bushing body with the first through hole (24) and a support arm (21) connected to the bushing body. The support arm (21) extends in a direction close to the baffle (4) and at least covers a portion of the baffle extension arm (13).

5. The ion source baffle according to claim 4, characterized in that, It also includes a bushing support arm cover plate (3), the rotating bushing (2) having a first side close to the baffle support (1) and a second side opposite to the first side, the bushing support arm cover plate (3) being located on the second side of the rotating bushing (2), the bushing support arm cover plate (3) covering at least a portion of the support arm (21).

6. The ion source baffle according to claim 5, characterized in that, The baffle (4) and the baffle support (1), the rotating bushing (2) and at least one of the baffle support (1), the support arm (21) and the bushing support arm cover plate (3) are connected by bolts.

7. The ion source baffle according to claim 5, characterized in that, Both the support arm (21) and the bushing support arm cover plate (3) are provided with two connecting holes distributed along their respective length directions, and a strip groove (21c) is also provided between the two connecting holes of the support arm (21).

8. The ion source baffle according to any one of claims 1-7, characterized in that, The baffle (4) is made of metal or inorganic non-metal.

9. The ion source baffle according to claim 8, characterized in that, The baffle support (1) is made of a different material than the baffle (4).

10. An ion source etching apparatus, characterized in that, It includes the ion source baffle as described in any one of claims 1-9.

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