Microfocus X-ray source (submicron level 160kV)
CN309831102SActive Publication Date: 2026-03-06海宁精奕电子有限公司
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- CN202530425076.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Designs(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-21
- Publication Date
- 2026-03-06
- Estimated Expiration
- 2040-07-21
Smart Images
Figure 000007_ABST
Abstract
1. Name of the product in this design: Microfocus X-ray source (submicron level 160kV). 2. Application of this design: It is used as a core component in testing and developing equipment for industrial non-destructive testing, integrated circuit testing, new energy, materials science, etc. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.
Need to check novelty before this filing date? Find Prior Art