Method for manufacturing an optoelectronic component and optoelectronic component

Abstract

Method for manufacturing an optoelectronic component (200) comprising the method (300): • Forming (302) at least one conductor structure (108) on or above a surface (114) of a substrate (102), • wherein at least a part (116) of the surface (114) of the substrate (102) is free of conductor structure (108) and the at least one conductor structure (108) has an exposed surface (112), • wherein at least the exposed surface (112) of the at least one conductor structure (108) and the surface of the substrate (114) are designed such that a Lewis adduct (110) can be formed on the exposed surface (112) of the at least one conductor structure (108) with respect to a given material and the surface (114) of the substrate (102) remains substantially free of the Lewis adduct (110); • Applying (304) the specified material to or over the surface of the at least one conductor structure (108) and the surface (114) of the substrate (102); and • Heating (306) at least one conductor structure (108) to or above a first threshold temperature, whereby the Lewis adduct (110) forms from the first threshold temperature onwards, • wherein the conductor structure (108) comprises or is formed from a plurality of nanowires and wherein the conductor structure (108) comprises a Lewis acid or a Lewis base.

Description

[0001] Various embodiments provide methods for manufacturing an optoelectronic component and an optoelectronic component.

[0002] Publication EP 2 736 076 A1 describes a device and method for producing a layered product, publication US 2004 / 0 087 182 A1 describes a method for producing a polymer material, and publication WO 2010 / 038 181 A1 describes an OLED device with a covered shunt line.

[0003] A conventional optoelectronic assembly has an optically active area with a first electrode, an organically functional layer structure, and a second electrode.

[0004] For various applications, one of the electrodes is made transparent. The transparent electrode is typically formed from a transparent conductive oxide (TCO) and exhibits low surface conductivity or transverse conductivity.

[0005] To increase or homogenize the current distribution in the transparent electrode, several electrical busbars are formed on the transparent electrode and electrically coupled to it. The electrical busbars are usually made of a metal.

[0006] The electrical busbars are typically formed between the transparent electrode and between the first and second electrodes. To prevent direct current flow through the electrical busbars to the organic functional layer structure, they are electrically insulated from it by a dielectric layer. This is usually achieved by coating the busbars with a resin. Alternative approaches involve forming a thin oxide layer on the busbars.

[0007] In the contact or connection area of ​​the optoelectronic assembly, the first and second electrodes are made electrically contactable by means of metallization layers, also referred to as metallization. For this purpose, the electrodes are electrically insulated from each other by means of a resist and formed in contact with the metallization.

[0008] One problem with the resist is pixel shrinkage. Pixel shrinkage refers to the degradation of the light-emitting surface, starting at the edges of the resist material. The mechanism behind this phenomenon is not yet fully understood. Possible causes include the outgassing of solvent components or the decomposition of organic matter by residues from the resist manufacturing process. The resist consists, for example, of polyimide derivatives.

[0009] Metallization is usually achieved using a cathode sputtering process in a vacuum. The resist consists of a negative photoresist. In this process, exposed areas become insoluble, while unexposed areas are washed away. This method is complex and expensive due to the photolithographic crosslinking step.

[0010] For cost reasons, the metallization layers and also the busbars should be produced using wet chemical methods, i.e. from a solution, and structured as free from lithography as possible.

[0011] In various embodiments, methods for manufacturing an optoelectronic component and an optoelectronic component are provided with which it is possible to produce metallizations, busbars and resists lithography-free from a solution.

[0012] In various embodiments, a method for manufacturing an optoelectronic component is provided. The method comprises forming at least one conductor structure on or over the surface of a substrate. At least a portion of the substrate surface is free of the at least one conductor structure, and the at least one conductor structure has an exposed surface. At least the exposed surface of the at least one conductor structure and the surface of the substrate are configured such that a Lewis adduct can be formed on the exposed surface of the at least one conductor structure with respect to a predetermined material, and the surface of the substrate remains substantially free of the Lewis adduct. The method further comprises applying the predetermined material to or over the exposed surface of the at least one conductor structure and the surface of the substrate.Furthermore, the method involves heating at least one conductor structure or above a first threshold temperature, whereby the Lewis adduct forms from the first threshold temperature onwards.

[0013] An adduct is a compound molecule formed in a reaction without byproducts such as water or alcohol. A Lewis adduct is an adduct between a Lewis acid and a Lewis base, i.e., covalently bonded molecules consisting of an electron donor and an electron acceptor. For example, the surface of the conductor structure can be functionalized with a Lewis acid, and the underlying material can be a Lewis base.

[0014] The process is based, for example, on the so-called "surface-induced cross-linking" of oxetane-functionalized materials. Here, the cross-linking of the oxetane groups is thermally initiated from a (Lewis) acidic surface. With this method, the layer thickness can be precisely controlled by the duration of the thermal activation. Layers with very low thickness variations can thus be formed. Unevenness is smoothed out. The process is particularly suitable for metallic layers, such as metallizations or busbars produced using wet chemical processes, i.e., from solution, e.g., silver or copper nanowires. The structuring of the metallization or the busbars, i.e., the formation of the at least one conductor structure, can be achieved, for example, by a screen printing process, which is particularly preferred for forming busbars.Alternatively, the conductor structure can be formed, for example, by means of a structured slot die coating, which is particularly preferred for forming the metallizations. A further advantage of the process is that the coating and structuring of the metallization, the busbars, and the dielectric insulation can be carried out using wet chemical processes (from a solution) and without lithography.

[0015] The surface of the substrate that remains essentially free of the Lewis adduct is essentially the portion of the substrate surface that is free of the conductor structure, i.e., where the conductor structure is not formed. By functionalizing the at least one conductor structure, a contrast is created between the chemical reactivity of the exposed surface of the at least one conductor structure and the chemical reactivity of the substrate surface. This subsequently enables the selective formation of a layer of the Lewis adduct on the exposed surface of the at least one conductor structure, i.e., in physical contact with the at least one conductor structure.

[0016] The functionality of the given material can be set, for example, using a functional group.

[0017] The process enables self-organized electrical insulation of busbars and / or metallization, for example when these have previously been processed from a Lewis acidic solvent.

[0018] Furthermore, the layer formed on the surface of the at least one conductor structure by means of the Lewis adduct exhibits a significantly higher glass transition temperature than conventionally used uncrosslinked layers. This results in high thermal stability of this layer.

[0019] In various embodiments, a method for manufacturing an optoelectronic component is provided. The method comprises forming at least one conductor structure on or over a surface of a substrate, wherein at least a portion of the substrate surface is free of the conductor structure and the at least one conductor structure has an exposed surface. At least the exposed surface of the at least one conductor structure is configured such that a Lewis adduct can be formed on the exposed surface of the at least one conductor structure with respect to a predetermined material. The method further comprises applying the predetermined material to or over the surface of the at least one conductor structure and the surface of the substrate.The method further comprises heating the at least one conductor structure to or above a first threshold temperature such that the surface of the at least one conductor structure has a temperature greater than or equal to the first threshold temperature and the surface of the substrate has a temperature less than the first threshold temperature, wherein the Lewis adduct forms from the first threshold temperature onwards.

[0020] The surface of the substrate and the surface of the at least one conductor structure can thus exhibit essentially the same functionalization with respect to the given material. However, the conductor structure is selectively heated so that the given material forms the Lewis adduct with the at least one conductor structure. In this way, the surface of the substrate remains essentially free of Lewis adduct.

[0021] According to the invention, the conductor structure comprises or is formed from a plurality of nanowires. The conductor structure may include a Lewis acid.

[0022] In various embodiments, the exposed surface of the at least one conductor structure is functionalized so that the Lewis adduct can be formed on the exposed surface of the at least one conductor structure. During functionalization, a proton donor (or electron donor) or an electron donor is formed on the exposed surface of the at least one conductor structure.

[0023] In various embodiments, the exposed surface of the at least one conductor structure is functionalized by means of a self-organizing monolayer, wherein the self-organizing monolayer has Lewis acidic head groups or Lewis basic head groups.

[0024] In various embodiments, the substrate comprises an electrically conductive layer on a support, and the at least one conductor structure is electrically conductive and electrically connected to the electrically conductive layer. Furthermore, at least in one region on or above the substrate, the at least one conductor structure, and the Lewis adduct, an organically functional layer structure is formed, and on or above this organically functional layer structure, another electrically conductive layer is formed. For example, in each case in direct physical contact.

[0025] In various embodiments, the specified material is applied using wet chemical methods, for example, dissolved in a solvent and applied at least to the surfaces of the at least one conductor structure and the substrate.

[0026] In various embodiments, the specified material has an oxetane group, for example in the form of an oxetane-functionalized polymer.

[0027] The oxetane group enables crosslinking of the given material, i.e., the oxetane-functionalized material, essentially without volume shrinkage, unlike, for example, the approximately 10% volume shrinkage of epoxies. This results, for instance, in the formation of a stress-free layer. This layer can be essentially free of microcracks. These microcracks could lead to short circuits and thus to the failure of the optoelectronic component.

[0028] The resolution of the formed layer is very high, since the conductor structure is, for example, exactly, transformed by the amount of the layer thickness of the cross-linked layer formed by means of the Lewis adduct.

[0029] Furthermore, the oxetane group is relatively easy to access in synthesis, which allows for a wide variety of dielectric materials.

[0030] In various embodiments, the formation of the Lewis adduct above the first threshold temperature involves a crosslinking reaction, for example, a living polymerization.

[0031] In various embodiments, the temperature is increased to at least the first threshold temperature by means of an electric current passing through the conductor structure.

[0032] In various embodiments, at least one first conductor structure and one second conductor structure are formed on the substrate. The temperature of the first conductor structure and the temperature of the second conductor structure are increased essentially equally, for example to approximately the same value, at least at the first threshold temperature.

[0033] In various embodiments, at least one first conductor structure and one second conductor structure are formed on the substrate. The temperature of the first conductor structure is increased to a temperature greater than or equal to the first threshold temperature, while the temperature of the second conductor structure remains essentially unchanged and / or below the first threshold temperature.

[0034] In various embodiments, the method further includes the removal of the predetermined material from the substrate surface and from the Lewis adduct on the exposed surface of the at least one conductor structure after the formation of the Lewis adduct. In other words, after the Lewis adduct has formed on the surface of at least one conductor structure, the unreacted or no longer reactive predetermined material is removed from the substrate surface and from the Lewis adduct, which forms a layer on the at least one conductor structure. Unreacted or no longer reactive predetermined material can, for example, no longer react because the temperature of the at least one conductor structure has been reduced to a value below the first threshold temperature, for example, to a value below the second threshold temperature.This stops the chemical reaction of the given material with the chemically active exposed surface of the at least one conductor structure or the chemically active surface of the chemically active Lewis adduct that has already formed on the exposed surface of the at least one conductor structure.

[0035] In other words, the reactive group on the surface is connected to the already crosslinked layer via covalent bonds. The chemical reaction can be stopped by removing any unreacted material still in solution, for example, by rinsing. After this step, the reactive groups remain covalently bound to the surface. The surface can then be treated with a base so that the end groups react. Alternatively, another layer can be applied, which is also further crosslinked via living polymerization. This process can be repeated or stopped as described above.

[0036] By applying a first non-active layer, for example from solution or by means of vacuum evaporation, the reactive surface is sealed, which also stops the reaction.

[0037] A further advantage of this process is that the insulation thickness of a conductor structure can be very precisely controlled by the duration of the thermal treatment, i.e., the heat supplied to the at least one conductor structure to form the Lewis adduct. Crosslinking stops when the temperature drops below the first or a second threshold temperature. Uncrosslinked areas and excess predefined material can be removed by means of a rinsing process.

[0038] In various embodiments, the Lewis adduct forms a dielectric layer on the exposed surface of the at least one conductor structure, for example an organic dielectric layer.

[0039] The crosslinking of the specified material from the solution with the surface of at least one conductor structure occurs from all surfaces and proceeds uniformly. A further advantage of the process is therefore the precise shaping of all activated / functionalized areas of the surfaces.

[0040] This method allows for the creation of precise layer structures with very low thickness variations between individual layers and a clear separation or demarcation of the materials of the two layers.

[0041] In various embodiments, the method further comprises the formation of another Lewis adduct on the Lewis adduct on the exposed surface of the at least one conductor structure.

[0042] The crosslinking reaction, i.e., the formation of the Lewis adduct, can be a so-called living polymerization. This means that, without deactivation, reactive ends remain on the surface of the formed or deposited Lewis adduct layer, which can initiate the crosslinking of a further layer. In this way, for example, the thermal stability of the resist layer can be optimized. A further advantage of the process is that multilayer dielectric layers, such as resist structures, become feasible.

[0043] In various embodiments, an optoelectronic component is provided. The optoelectronic component comprises an electrically conductive layer on a substrate, at least one conductor structure on the electrically conductive layer, wherein at least a portion of the surface of the electrically conductive layer is free of the conductor structure and the at least one conductor structure has an exposed surface, and a dielectric layer on the exposed surface of the at least one conductor structure, wherein the surface of the electrically conductive layer is substantially free of the dielectric layer, and wherein the dielectric layer is formed from a Lewis adduct.

[0044] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0045] They show Fig. 1 A schematic cross-sectional view of a part of an optoelectronic component according to various embodiments; Fig. 2 a schematic cross-sectional view of an optoelectronic component according to various embodiments; Fig. 3 a diagram illustrating a method according to various embodiments for manufacturing an optoelectronic component; Fig. 4A-C schematic reaction schemes for surface-induced crosslinking to form a Lewis adduct according to various embodiments; Fig. 5A-E Schematic representations of an optoelectronic component according to various embodiments during manufacturing; Fig. 6A-D Schematic representations of an optoelectronic component according to various embodiments during manufacturing; and Fig. 7 A schematic cross-sectional view of an optoelectronic component according to various embodiments.

[0046] The following detailed description refers to the accompanying drawings, which form part thereof and in which specific embodiments of the invention are shown for illustrative purposes. In this respect, directional terminology such as "top," "bottom," "front," "back," "anterior," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves for illustration and is in no way restrictive. It is understood that other embodiments may be used and structural or logical modifications may be made. It is understood that the features of the various exemplary embodiments described herein may be combined with one another unless specifically stated otherwise.The following detailed description is therefore not to be understood in a restrictive sense, and the invention is defined by the attached claims.

[0047] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0048] An optoelectronic component with two planar, optically active surfaces can be transparent or translucent in the direction connecting these surfaces, for example, as in a transparent or translucent organic light-emitting diode (OLED). A planar optoelectronic component can also be referred to as a flat optoelectronic component.

[0049] The optically active area can also have a planar, optically active side and a planar, optically inactive side, for example, an organic light-emitting diode configured as a so-called top emitter or bottom emitter. The optically inactive side can be transparent or translucent in various embodiments, or it can be provided with a mirror structure and / or an opaque material or mixture, for example, for heat dissipation. The beam path of the optoelectronic component can, for example, be unidirectional.

[0050] The first electrode, the second electrode, and the organic functional layer structure can each be large-area. This allows the optoelectronic device to have a continuous luminescent surface that is not structured into functional sub-areas, for example, a luminescent surface segmented into functional areas or a luminescent surface formed by a large number of pixels. This enables large-area emission of electromagnetic radiation from the optoelectronic device. "Large-area" can mean that the optically active side has an area, for example, a continuous surface, of a size greater than or equal to a few square millimeters, a square centimeter, or a square decimeter.For example, the optoelectronic component may only have a single contiguous luminescent surface, which is achieved through the large-area and contiguous formation of the electrodes and the organically functional layer structure.

[0051] Fig. Figure 1 shows a schematic cross-sectional view of area 100 of an optoelectronic component, which is described in more detail below.

[0052] In various embodiments, at least one conductor structure 108 is formed on a substrate 102. Fig. Figure 1 illustrates three ladder structures 108 or a ladder structure 108 which has three ladder structures.

[0053] The conductor structure 108 is structured on the surface 114 of the substrate 102 such that a portion or region 116 of the surface 114 of the substrate 102 is essentially free of the conductor structure. The conductor structure 108 has an exposed surface 112 on which a dielectric layer 110 is formed. The dielectric layer 110 has a Lewis adduct 110 or is formed from one. The surface 114 of the substrate 102 is essentially free of the dielectric layer 110 or the Lewis adduct 110.

[0054] The substrate 102 can, for example, have an electrically conductive layer 106 on a support 104. The conductor structure 108 is, for example, electrically conductive. The conductor structure 108 is, for example, formed on the electrically conductive layer 106, that is, on the surface 114 of the electrically conductive layer 106, and is electrically connected to it.

[0055] The electrically conductive layer 106 with the at least one conductor structure 108 can, in various embodiments, form an electrode structure 118 of the optoelectronic component. Alternatively, the conductor structure 108 with the substrate 102 can form an electrode structure 120 of the optoelectronic component, for example, if the support 104 is electrically conductive. The dielectric layer 110 can optionally be a component of the electrode structure 118, 120.

[0056] The electrical transverse conductivity of the electrically conductive layer 106 can be increased by means of the conductor structure 108, i.e. the lateral current distribution in the electrically conductive layer 106 can be improved by means of the at least one conductor structure 108, for example in the case that the electrically conductive layer is formed from a transparent conductive material, for example ITO.

[0057] In other words, in various embodiments, the electrically conductive layer 106 is formed, for example, from a transparent, conductive material. The conductor structure 108 is designed with a higher electrical conductivity than the electrically conductive layer 106. The electrically conductive layer 106 is at least partially exposed on the surface of the support 104, and the at least one conductor structure 108 is formed on the electrically conductive layer 106. The conductor structure 108 is designed, for example, as a so-called busbar on or for the substrate 102, for example, with respect to the electrically conductive layer 106 on the support 104.

[0058] The ladder structure 108 is formed, for example, using a masking process or screen printing.

[0059] In various embodiments, several conductor structures 108 are formed on the substrate 102, i.e., at least a first conductor structure and a second conductor structure. A conductor structure or the several conductor structures can be formed in the form of one or more electrically conductive conductors, one or more electrically conductive contact point(s), and / or contact hole(s) on or above the substrate 102. Several conductors, contact points, or contact holes can be arranged laterally spaced apart from one another on the substrate 102. Several conductors, contact points, or contact holes can be electrically connected to one another, for example, indirectly by means of an electrically conductive layer 106 of the substrate on which they are formed, or by means of a contact conductor to which they are connected.

[0060] In various examples of the method according to the invention, the conductor structure 108 has a plurality of nanowires or is formed from them.

[0061] When using silver nanowires as the conductor structure 108, the fabrication of the at least one conductor structure 108 can be carried out from a Lewis acidic solvent. As a result, the functionalization of the surface 112 of the at least one conductor structure 108 remains intrinsic after drying of the at least one conductor structure 108.

[0062] In various embodiments of the method, the Lewis adduct 110 is electrically non-conductive.

[0063] In various embodiments of the method, the Lewis adduct 110 is formed as a dielectric layer on the exposed surface 112 of the at least one conductor structure 108, for example, as an organic dielectric layer. In various embodiments of the method, the dielectric layer covers substantially the entire exposed surface 112 of the at least one conductor structure 108. The entire surface is the surface that would otherwise be exposed or in physical and electrical contact with the organically functional layer structure. In other words, the dielectric layer is formed such that the conductor structure 108 is electrically insulated from the organically functional layer structure by means of the dielectric layer. The dielectric layer shapes the conductor structure 108 for this purpose.

[0064] In various embodiments of the method, the dielectric layer is formed with a thickness in a range of approximately 5 nm to approximately 100 nm, for example in a range of approximately 10 nm to approximately 60 nm, for example in a range of approximately 15 nm to approximately 50 nm.

[0065] Fig. Figure 2 shows a schematic cross-sectional view of an optoelectronic component 200. In various embodiments, an organically functional layer structure 202 can be formed on or above the substrate 102, for example, above the electrically conductive layer 106, the at least one conductor structure 108, and the dielectric layer 110. Furthermore, a further electrically conductive layer 204 can be formed on or above the organically functional layer structure 202. In other words, the electrically conductive layer 106 can form a first electrode and the further electrically conductive layer 204 a second electrode, between which the organically functional layer structure 202, the conductor structure 108, and the dielectric layer 110 are arranged.

[0066] The dielectric layer 110 electrically insulates the conductor structure 108 with respect to the organic functional layer structure 202, so that charge carrier transport, i.e., current flow, occurs from the electrically conductive layer 106 through the organic functional layer structure 202 to the further electrically conductive layer 204 and not from the at least one conductor structure 108 through the organic functional layer structure 202 to the further electrically conductive layer 204. Fig. Figure 3 illustrates a flowchart of a method 300 for manufacturing an optoelectronic component, which can essentially correspond to one of the embodiments shown above.

[0067] In various embodiments, the method 300 comprises the formation 302 of at least one conductor structure on or over a surface of a substrate.

[0068] Furthermore, the method involves applying 304 a specified material to or over the surface of the at least one conductor structure and the surface of the substrate.

[0069] Furthermore, the method involves heating at least one conductor structure or above a first threshold temperature.

[0070] Fig. Figures 4A-C schematically show reaction schemes for surface-induced crosslinking to form a Lewis adduct.

[0071] In various embodiments of the process, the specified material comprises or is an organic compound with a heterocyclic four-membered ring, for example an organic compound with an oxetane group or a 1,3-propylene oxide group (formula I): where R and R' are independently selected from the group: hydrogen, linear or branched C 1-20 Alkyl, C 2-12 Alkenyl, C2-12 Alkynyl, C 3-8 Cycloalkyl or cycloalkenyl, C 6-14 Aryl, 5-14-membered heteroaryl, wherein the 1st to 4th ring atom can be independent of each other: nitrogen, oxygen, sulfur; 5-14-membered heteroalicyclic, wherein the 1st to 4th ring atom can be independent of each other: nitrogen, oxygen, sulfur, alkylaryl, arylalkyl, alkylheteroaryl and heteroarylalkyl.

[0072] In various embodiments, R' is a methyl group. In other words, one group, here R, has a less complex and sterically demanding structure, for example, a less long and / or branched structure. This allows, for example, the accessibility and mobility of the oxetane group for the reaction to be optimized.

[0073] In various embodiments of the process, the specified material is an oxetane-functionalized polymer.

[0074] Fig. Figure 4A shows the initialization of a crosslinking of an oxetane-functionalized monomer 406 with a Lewis-functionalized surface 402, for example PEDOT / HPSS. The substrate 402 can be configured or functionalized such that an easily transferable proton or electron is provided at the surface, i.e., be Lewis acidic or Lewis basic.

[0075] A proton 408 from surface 402 is transferred to an oxetane group, leaving a negative charge 404 on surface 402.

[0076] This transition allows the oxetane-functionalized monomer to be deposited or adhered to the functionalized surface of substrate 402.

[0077] In other words, the formation of the Lewis adduct 110 above the first threshold temperature exhibits a crosslinking reaction in various embodiments, for example, a living polymerization.

[0078] Fig. Figure 4B illustrates why polymerization can be stopped by charge separation, since a transferred proton 408 of an oxetane-functionalized polymer 410 already bound to the surface 402 and the negative charge 404 on the surface 402 can attract each other by means of a Coulomb force. The oxetane-functionalized polymer 410 already bound to the surface 402 forms an organic layer that can essentially correspond to the dielectric layer or Lewis adduct described above.

[0079] Fig. Figure 4C illustrates how the polymerization, i.e., the formation of the Lewis adduct, continues because a counterion is able to move through the organic layer of the Lewis adduct.

[0080] In the Fig. Figures 5A-5E illustrate the fabrication of an optoelectronic component according to various embodiments in schematic cross-sectional views, whereby the electronic structure thus produced can essentially correspond to an electronic structure described above.

[0081] In one step 500, illustrated in Fig. Figure 5A illustrates the provision of a conductor structure 108 with an exposed surface 112 on a surface of a substrate 102, wherein a part 116 of the surface 114 of the area of ​​the substrate 102 on which the conductor structure 108 is formed is free of conductor structure 108.

[0082] In a further step, 510, illustrated in Fig. In 5B, the surface 114 of the substrate 102 and the surface 112 of the at least one conductor structure 108 are subjected to functionalization or processing, such that a chemical contrast with a predetermined material is formed. In other words, in various embodiments, a functionalization 512, for example, the formation or deposition of a proton donor, is carried out on the exposed surface 112. The functionalization of the surface 112 of the at least one conductor structure 108 can be selective with respect to the surface 114 of the substrate 102. That is, the functionalization 512 with respect to the formation of the Lewis adduct is, for example, formed essentially only on the surface 112 of the at least one conductor structure 108.The surface 114 of the substrate 102 can be essentially free of this functionalization 512 for the formation of a Lewis adduct, as will be shown in more detail later. In other words, at least the surface 112 of a conductor structure 108 can be selectively functionalized with respect to the surface 114 / 116 of the substrate 102, such that a Lewis adduct can be formed on the functionalized surface 512 of the at least one conductor structure.

[0083] In various embodiments of the method, the conductor structure 108 features, for example, a Lewis acid or a Lewis base as a functionalization, depending on the specific material, such that a Lewis adduct can be formed by means of the functionalization and the specific material. The conductor structure 108 can be formed, for example, using wet chemical processes, such as screen printing. The screen printing paste, i.e., the paste from which the conductor structure is formed, can, for example, contain the Lewis acid or the Lewis base before the screen printing paste is applied to the substrate. After the screen printing paste has dried, the Lewis acid or the Lewis base can be present on the surface of the conductor structure as a functionalization.

[0084] Alternatively, the exposed surface 112 of the at least one conductor structure 108 is functionalized so that the Lewis adduct 110 can be formed on the exposed surface of the at least one conductor structure 108.

[0085] In various embodiments of the process, depending on the given material, a proton donor or an electron donor is formed on the exposed surface 112 of the at least one conductor structure 108 during functionalization. Functionalization can be carried out, for example, by a redox reaction, oxidation, sulfidation, wet chemically, and / or by means of a self-assembled monolayer (SAM).

[0086] The self-assembled monolayer can be formed, for example, from monomers, oligomers, or polymers, each comprising a head group, a spacer unit, and an anchor group. The head group contains a Lewis functional group, such as a Lewis acid group, for example, an oxetane group. The spacer unit contains, for example, an alkyl chain. The anchor group is configured to selectively bind to the conductor structure, such as a metallization or a busbar. An anchor group can be, for example, a carboxy group (R-COOH), a nitrile group (R-CN), a thiol group (R-SH), or a phosphoric acid group (R-PO(OH)₂). The carboxy group binds, for example, to a conductor structure containing nickel or titanium. The nitrile group binds, for example, to a conductor structure containing silver. The thiol group binds, for example, to a conductor structure containing silver, gold, chromium, or copper.The phosphoric acid group, for example, binds to a conductor structure made of / with aluminum and ITO.

[0087] In a further step, 520, illustrated in Fig. In 5C, a solution 522, which in a solvent contains a predetermined material capable of forming a Lewis adduct with the functionalization 512 of the surface 112 of the at least one conductor structure 108, is applied to or over the surfaces 112 / 512, 116 of the at least one conductor structure 108 or of the substrate 102. In other words, in various embodiments of the method, the predetermined material is applied wet-chemically, for example, dissolved in a solvent, to the exposed surfaces 112 of the at least one conductor structure 108 and of the substrate 102.

[0088] Solution 522 can be applied using wet chemical methods, such as spin coating. Alternatively, the substrate 102 with at least one conductor structure 108 can be immersed in solution 522, for example, as a dip coating. Other wet chemical processes are also possible, such as slot die coating or inkjet printing.

[0089] Suitable solvents include, for example, common polar and nonpolar organic solvents and their mixtures, such as those from the group consisting of toluene, xylene, phenetol, dichloromethane, and tetrahydrofuran.

[0090] Suitable functionalized polymers could be, for example, polystyrenes, polypyrrole, polyaniline, polyparaphenylene, polythiophene, but also block copolymers with functionalized head groups.

[0091] In a further step, 540, illustrated in Fig. 5D, at least one conductor structure 108 is heated - illustrated in Fig. 5D by means of Q1. By means of heating Q1, the temperature of the at least one conductor structure 108 is increased. When a first threshold temperature is exceeded, a chemical reaction begins between the functionalized surface 512 of the at least one conductor structure 108 and the specified material of the solution 522.

[0092] By means of the functionalization 512 of the at least one conductor structure 108, a Lewis adduct 110, for example a dielectric layer 110, can be formed on this conductor structure 108, wherein the surface of the substrate, which is also exposed to the solution 522, remains essentially free of the Lewis adduct.

[0093] Starting from the functionalized surface 512 of the at least one conductor structure, a uniformly thick layer is formed at all points that have a Lewis-activated surface with respect to the specified material, for example a Lewis acidic surface with respect to an oxetane-functionalized monomer or polymer as the specified material, and have a temperature above the first threshold temperature.

[0094] In various embodiments of the method, the temperature is increased to at least the first threshold temperature by means of an electric current through the conductor structure 108.

[0095] In various embodiments of the method, the temperature of at least one conductor structure 108 is increased by irradiating the at least one conductor structure 108 with electromagnetic radiation. The irradiation is, for example, laser irradiation or infrared irradiation.

[0096] In various embodiments of the method, the temperature of the at least one conductor structure 108 is indirectly increased by increasing the temperature of the substrate.

[0097] In various embodiments of the method, the substrate 102 with the at least one conductor structure 108 is arranged in a solution while the temperature of the at least one conductor structure 108 is increased. The temperature of the at least one conductor structure 108 is increased by raising the temperature of the solution or by using a heated solution. In other words, in various embodiments of the method, the temperature of the at least one conductor structure 108 is increased by using a warm solution 522, i.e., the temperature of the solution is at or above the first threshold temperature, so that the Lewis adduct is formed on the surface of the at least one conductor structure upon immersion in the solution, or by heating the solution to a temperature at or above the first threshold temperature.

[0098] In various embodiments of the method, the temperature of at least one conductor structure 108 is increased in an oven. Alternatively or additionally, the temperature of at least one conductor structure 108 is increased by means of hot air irradiation.

[0099] Furthermore illustrated in Fig. 5D: In various embodiments of the method, at least one first conductor structure 524 and a second conductor structure 526 are formed on the substrate 102. The temperature of the first conductor structure 524 and the temperature of the second conductor structure 526 are increased substantially equally, for example to approximately the same value, at least at the first threshold temperature. This allows a dielectric or insulating layer 110 with the Lewis adduct to be formed substantially simultaneously on two or more conductor structures.

[0100] In a further step, 550, illustrated in Fig. In step 5E, solution 522 is removed from the surfaces of substrate 102 and from the Lewis adduct 110 on the at least one conductor structure 108. The temperature of the at least one conductor structure, heated above the first threshold temperature, can be cooled before, during, or after the removal of solution 522. The cooling of the at least one conductor structure can, for example, be carried out to a value below a second threshold temperature, below which the crosslinking reaction of the predefined material with the surface of the already deposited Lewis adduct on the surface of the at least one conductor structure is stopped. In other words, the crosslinking reaction stops upon temperature reduction. Excess solution, i.e., excess solvent and excess functionalized monomers, can be removed, a process also known as development.

[0101] In other words, in various embodiments, the method further includes the removal of the specified material after the formation of the Lewis adduct 110 from the surface of the substrate and from the Lewis adduct 110 on the exposed surface 112 of the at least one conductor structure 108. The removal of the Lewis adduct 110 thus constitutes a development process. Development takes place, for example, after reducing the temperature to a value below the second threshold temperature. The solution containing the specified material is rinsed, for example, from the surfaces of the substrate and the conductor structure 108 coated with the Lewis adduct 110, for example, with the same solvent as that in which the specified material was dissolved.

[0102] In various embodiments of the method, after the formation of the Lewis adduct 110 with a predetermined thickness, the temperature of at least one conductor structure 108, which is above the first threshold temperature, is cooled to a second threshold temperature. At the second threshold temperature, the formation of the Lewis adduct 110 by means of the predetermined material is essentially prevented. In various embodiments of the method, after the formation of the Lewis adduct 110 with a predetermined thickness, the temperature of the at least one conductor structure 108, which is above the first threshold temperature, is cooled to the second threshold temperature. In other words, the Lewis adduct 110 is formed above the first threshold temperature. Below the second threshold temperature, the crosslinking reaction is stopped and no further Lewis adduct 110 is formed.The second threshold temperature is approximately equal to or lower than the first threshold temperature.

[0103] In various embodiments, the method comprises forming at least one conductor structure 108 on or over a surface 114 of a substrate 102, wherein at least a portion 116 of the surface 114 of the substrate 102 is free of the conductor structure 108 and the at least one conductor structure 108 has an exposed surface 112. At least the exposed surface 112 of the at least one conductor structure 108 is configured such that a Lewis adduct can be formed on the exposed surface 112 of the at least one conductor structure 108 with respect to a predetermined material, and the surface of the substrate remains substantially free of the Lewis adduct. The method further comprises applying the predetermined material to or over the surface of the at least one conductor structure and the surface of the substrate.The method further comprises heating the at least one conductor structure to or above a first threshold temperature such that the surface of the at least one conductor structure has a temperature greater than or equal to the first threshold temperature and the surface of the substrate has a temperature less than the first threshold temperature, wherein the Lewis adduct forms from the first threshold temperature onwards.

[0104] This allows the entire exposed surface of the substrate and the conductor structure to be Lewis-functionalized, for example, by means of an acid rinse, so that at least one monolayer of acid remains on the exposed surface. The specified material can be dissolved in a solvent as described above, i.e., applied to the exposed surface as solution 522. The temperature of the at least one conductor structure can be increased, for example, by supplying an electric current through the at least one conductor structure or by selective heating of the at least one conductor structure, for example, by induction or local irradiation with a laser. Starting from the heated surface, a uniformly thick layer forms at all points that exceed the crosslinking temperature (first threshold temperature). The crosslinking reaction stops when the temperature drops (below the first or second threshold temperature).Excess solvent and excess monomers of the specified material can then be removed.

[0105] In the Fig. Figures 6A-6D show schematic cross-sectional views illustrating the fabrication of an optoelectronic component according to various embodiments, whereby the optoelectronic component thus fabricated may essentially correspond to an optoelectronic component described above.

[0106] In one step 600, illustrated in Fig. Figure 6A illustrates the provision of a conductor structure 108 with a Lewis adduct 110 formed on its surface 112 on the surface of a substrate 102. A portion 116 of the surface of the substrate 102 on which the conductor structure 108 is formed is free of the conductor structure 108. The provided structure can, for example, be essentially the one shown in Figure 6A. Fig. 5E illustrates the structure.

[0107] The crosslinking reaction, i.e., the formation of the Lewis adduct, can be a so-called living polymerization. This means that, without deactivation, reactive ends remain on the surface of the layer of formed or deposited Lewis adduct, which can initiate the crosslinking of a further layer.

[0108] In this way, for example, the thermal stability of the resist layer can be optimized. A further advantage of the method is that multilayer dielectric layers, such as resist structures, become feasible.

[0109] In a further step, 610, illustrated in Fig. 6B, a further solution 602, which in a further solvent comprises a further specified material capable of forming a further Lewis adduct with the reactive ends of the Lewis adduct on the conductor structures 108, is applied to or over the surfaces of the Lewis adduct 110, optionally of the at least one conductor structure 108 or of the substrate 102. The further solvent and / or the further specified material may correspond to an embodiment of the solvent or the specified material and may be identical or different from these.

[0110] The further solution 602 can be applied, for example, by wet chemical means, such as in a spin coating process. Alternatively, the substrate 102 with the at least one conductor structure 108 and the Lewis adduct 110 can be immersed in the solution 602.

[0111] In a further step, 620, illustrated in Fig. At 6°C, at least one conductor structure 108 is heated - illustrated in Fig. 6C by means of Q2. By means of heating Q2, the temperature of the at least one conductor structure 606 is increased, for example above the first threshold temperature, so that the further specified material can chemically react with the Lewis adduct on the surface of the at least one conductor structure 606 and can form a further Lewis adduct 604. The further Lewis adduct 604 can be the same or different from the previously formed Lewis adduct 110.

[0112] Starting from the Lewis adduct on the surface of the conductor structure 606 heated by means of Q2, a uniformly thick layer is formed at all points.

[0113] Furthermore illustrated in Fig. 6C: In various embodiments of the method, at least one first conductor structure 606 and a second conductor structure 608 are formed on the substrate 102. The temperature of the first conductor structure 606 is increased to a temperature greater than the first threshold temperature, and the temperature of the second conductor structure 608 remains essentially unchanged and / or below the first threshold temperature.

[0114] The temperature of the first conductor structure 606 can be selectively increased relative to the second conductor structure 608, for example, by means of laser irradiation or selective current application to the first conductor structure 606.

[0115] This results in the formation of another Lewis adduct 604 on the Lewis adduct 110 of the first conductor structure 606. The first conductor structure 606 thus has, for example, a multilayered dielectric or insulating layer that differs from the dielectric or insulating layer on the second conductor structure 608 in thickness and / or material.

[0116] In other words, in various embodiments, the method further comprises the formation of another Lewis adduct 604 on the Lewis adduct 110 on the exposed surface 112 of the at least one conductor structure 108. The further Lewis adduct 604 can be the same as or different from the Lewis adduct 110 on the surface 112 of the at least one conductor structure 108.

[0117] In a further step, 630, illustrated in Fig. 6D, the remaining solution 602 is removed from the surfaces. The temperature of the at least one first conductor structure 606, heated above the first threshold temperature, can be cooled before, during, or after the removal of the solution 602.

[0118] The cooling of the first conductor structure 606 can, for example, be carried out to a value below a second threshold temperature, below which the crosslinking reaction of the further specified material with the surface of the already deposited further Lewis adduct is stopped. In other words, the crosslinking reaction stops upon temperature reduction. Excess further solution, i.e., excess further solvent and excess further specified material, for example, further functionalized monomers, can be removed.

[0119] In various embodiments of the method, after the formation of the further Lewis adduct 604 with a predetermined thickness, the temperature of the first conductor structure 606, which is above the first threshold temperature, is cooled to a second threshold temperature. At the second threshold temperature, the formation of the further Lewis adduct 606 by means of the predetermined material is essentially prevented. In various embodiments of the method, after the formation of the further Lewis adduct 110 with a predetermined thickness, the temperature of the first conductor structure 108, which is above the first threshold temperature, is cooled to the second threshold temperature. In other words, the further Lewis adduct 604 is formed above the first threshold temperature.Below the second threshold temperature, the crosslinking reaction is stopped and no further Lewis adduct 604 is formed. The second threshold temperature is approximately equal to or lower than the first threshold temperature.

[0120] In various embodiments, the method further includes the removal of the specified material after the formation of the additional Lewis adduct 604. The development takes place, for example, after reducing the temperature to a value below the second threshold temperature. The solution containing the additional specified material is then rinsed off, for example, with the same additional solvent as that in which the additional specified material was dissolved. Fig.Figure 7 shows an embodiment of an optoelectronic component 700, which can essentially correspond to one of the embodiments shown above. The optoelectronic component 700 has a support 12. The support 104 can be translucent or transparent. The support 104 serves as a substrate for electronic elements or layers, for example, light-emitting elements. The support 104 can, for example, be made of or comprise a plastic, metal, glass, quartz, and / or a semiconductor material. Furthermore, the support 104 can be made of or comprise a plastic film or a laminate with one or more plastic films. The support 104 can be mechanically rigid or mechanically flexible.

[0121] An optoelectronic layer structure is formed on the support 104. This optoelectronic layer structure comprises a first electrode layer 14, which includes a first contact section 16, a second contact section 18, and a first electrode 106, also referred to as the electrically conductive layer 106. The support 104 with the first electrode layer 14 can also be referred to as the substrate 102. A first barrier layer (not shown), for example, a first barrier thin film, can be formed between the support 104 and the first electrode layer 14.

[0122] The first electrode 106 is electrically isolated from the first contact section 16 by means of an electrical insulation barrier 21.

[0123] In various embodiments, the insulating barrier 21 is formed from a Lewis adduct, for example according to the description of the Lewis adduct 110 or the dielectric layer 110, for example simultaneously or as part of the Lewis adduct 110 on the surface of the at least one conductor structures.

[0124] The second contact section 18 is electrically coupled to the first electrode 106 of the optoelectronic layer structure. The first electrode 106 can be configured as an anode or as a cathode. The first electrode 106 can be translucent or transparent.

[0125] The first electrode 106 comprises an electrically conductive material, for example, a metal and / or a transparent conductive oxide (TCO), or a stack of multiple layers comprising metals or TCOs. The first electrode 106 may, for example, comprise a stack of layers combining a layer of a metal on a layer of a TCO, or vice versa. An example is a silver layer deposited on an indium tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. Alternatively or additionally to the aforementioned materials, the first electrode 106 may comprise: networks of metallic nanowires and particles, for example, made of Ag; networks of carbon nanotubes; graphene particles and layers; and / or networks of semiconducting nanowires.

[0126] Transparent conductive oxides are transparent, conductive materials, for example, metal oxides such as zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide, or indium tin oxide (ITO). Besides binary metal-oxygen compounds, such as ZnO, SnO₂, or In₂O₃, ternary metal-oxygen compounds, such as AlZnO, Zn₂SnO₄, CdSnO₃, ZnSnO₃, MgIn₂O₄, GaInO₃, Zn₂In₂O₅, or In₄Sn₃O, also belong to this group. 12 or mixtures of different transparent conductive oxides to the group of TCOs.

[0127] The first electrode 106 can, alternatively or additionally to the aforementioned materials, comprise: networks of metallic nanowires and particles, for example, made of Ag; networks of carbon nanotubes; graphene particles and layers; and / or networks of semiconducting nanowires. For example, the first electrode 106 can comprise or be composed of one of the following structures: a network of metallic nanowires, for example, made of Ag, combined with conductive polymers; a network of carbon nanotubes combined with conductive polymers; and / or graphene layers and composites. Furthermore, the first electrode 106 can comprise electrically conductive polymers or transition metal oxides.

[0128] The first electrode 106 can, for example, have a layer thickness in a range of 10 nm to 500 nm, for example from 25 nm to 250 nm, for example from 50 nm to 100 nm.

[0129] The first electrode 106 can have a first electrical connection to which a first electrical potential can be applied. This first electrical potential can be provided by an energy source (not shown), for example, a current source or a voltage source. Alternatively, the first electrical potential can be applied to the carrier 104 and indirectly supplied to the first electrode 106 via the carrier 104. The first electrical potential can be, for example, the ground potential or another predefined reference potential.

[0130] Above the first electrode 106, an optically functional layer structure, for example an organic functional layer structure 202, is formed as part of the optoelectronic layer structure. The organic functional layer structure 202 can, for example, have one, two, or more sublayers. For example, the organic functional layer structure 202 can have a hole injection layer, a hole transport layer, an emitter layer, an electron transport layer, and / or an electron injection layer. The hole injection layer serves to reduce the band gap between the first electrode and the hole transport layer. In the hole transport layer, the hole conductivity is greater than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is greater than the hole conductivity. The electron transport layer serves to transport the electrons.The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Furthermore, the organic functional layer structure 202 can comprise one, two, or more functional layer structure units, each of which includes the aforementioned sublayers and / or further intermediate layers.

[0131] Above the organic functional layer structure 202, a second electrode 204, also referred to as a further electrically conductive layer 204, of the optoelectronic layer structure is formed, which is electrically coupled to the first contact section 16. The second electrode 204 can be configured according to one of the embodiments of the first electrode 106, whereby the first electrode 106 and the second electrode 204 can be identical or different. The first electrode 106 serves, for example, as the anode or cathode of the optoelectronic layer structure. Correspondingly to the first electrode, the second electrode 204 serves as the cathode or anode of the optoelectronic layer structure.

[0132] The optoelectronic layer structure is an electrically and / or optically active region. The active region is, for example, the region of the optoelectronic component 700 in which electric current flows to operate the optoelectronic component 700 and / or in which electromagnetic radiation is generated or absorbed.

[0133] A getter structure (not shown) can be arranged on or above the active area. The getter layer can be translucent, transparent, or opaque. The getter layer can contain or be composed of a material that absorbs and binds substances harmful to the active area.

[0134] An encapsulation layer 24 of the optoelectronic layer structure is formed over the second electrode 204 and partially over the first contact section 16 and partially over the second contact section 18. This encapsulation layer 24 encapsulates the optoelectronic layer structure. The encapsulation layer 24 can be configured as a second barrier layer, for example, as a second barrier thin film. The encapsulation layer 24 can also be referred to as thin-film encapsulation. The encapsulation layer 24 forms a barrier against chemical impurities and atmospheric substances, particularly water (moisture) and oxygen. The encapsulation layer 24 can be configured as a single layer, a stack of layers, or a layered structure.The encapsulation layer 24 can comprise or be formed from: aluminum oxide, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride, silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum-doped zinc oxide, poly(p-phenylene terephthalamide), nylon 66, as well as mixtures and alloys thereof. Optionally, the first barrier layer on the support 104 can be configured corresponding to an embodiment of the encapsulation layer 24.

[0135] In the encapsulation layer 24, a first recess is formed above the first contact section 16, and a second recess is formed above the second contact section 18. A first contact area 32 is exposed in the first recess, and a second contact area 34 is exposed in the second recess. The first contact area 32 serves to electrically contact the first contact section 16, and the second contact area 34 serves to electrically contact the second contact section 18.

[0136] An adhesive layer 36 is formed above the encapsulation layer 24. The adhesive layer 36 comprises, for example, an adhesive, such as a laminating adhesive, a lacquer, and / or a resin. The adhesive layer 36 may, for example, contain particles that scatter electromagnetic radiation, such as light-scattering particles.

[0137] A cover body 38 is formed above the adhesive layer 36. The adhesive layer 36 serves to attach the cover body 38 to the encapsulation layer 24. The cover body 38 comprises, for example, plastic, glass, and / or metal. For example, the cover body 38 can be made primarily of glass and have a thin metal layer, such as a metal foil, and / or a graphite layer, such as a graphite laminate, on the glass body. The cover body 38 serves to protect the conventional optoelectronic component 700, for example, from external mechanical forces. Furthermore, the cover body 38 can serve to distribute and / or dissipate heat generated in the conventional optoelectronic component 700.For example, the glass of the cover body 38 can serve as protection against external influences and the metal layer of the cover body 38 can serve to distribute and / or dissipate the heat generated during the operation of the conventional optoelectronic component 700.

[0138] The invention is not limited to the specified embodiments. For example, any electrically conductive structure on a substrate can be electrically isolated from the substrate environment using the specified method. This allows, for example, the formation of insulation for contact surfaces of any electronic component. Furthermore, the insulation can be formed from different Lewis adducts. Depending on the specified material that chemically reacts with the surface of the electrically conductive structure to form the Lewis adduct, the electrically conductive structure is functionalized in a Lewis-basic or Lewis-acidic manner, particularly by wet chemical means. Furthermore, embodiments of the organic, light-emitting component can be applied analogously and, where applicable, to the method for producing and operating the organic, light-emitting component, and vice versa.

Claims

[1] Method for manufacturing an optoelectronic device (200) comprising the method (300): • Forming (302) at least one conductor structure (108) on or above a surface (114) of a substrate (102), • wherein at least a part (116) of the surface (114) of the substrate (102) is free of conductor structure (108) and the at least one conductor structure (108) has an exposed surface (112), • wherein at least the exposed surface (112) of the at least one conductor structure (108) and the surface of the substrate (114) are designed such that a Lewis adduct (110) can be formed on the exposed surface (112) of the at least one conductor structure (108) with respect to a given material and the surface (114) of the substrate (102) remains substantially free of the Lewis adduct (110); • Applying (304) the specified material to or over the surface of the at least one conductor structure (108) and the surface (114) of the substrate (102); and • Heating (306) at least one conductor structure (108) to or above a first threshold temperature, whereby the Lewis adduct (110) forms from the first threshold temperature onwards, • wherein the conductor structure (108) comprises or is formed from a plurality of nanowires and wherein the conductor structure (108) comprises a Lewis acid or a Lewis base. [2] Method for manufacturing an optoelectronic device (200) comprising the method (300): • Forming (302) at least one conductor structure (108) on or above a surface (114) of a substrate (102), • wherein at least a part (116) of the surface (114) of the substrate (102) is free of conductor structure (108) and the at least one conductor structure (108) has an exposed surface (112), • wherein at least the exposed surface (112) of the at least one conductor structure (108) is designed such that a Lewis adduct (110) can be formed on the exposed surface (112) of the at least one conductor structure (108) with respect to a given material; • Applying (304) the specified material to or over the surface of the at least one conductor structure (108) and the surface (114) of the substrate (102); and • Heating (306) the at least one conductor structure (108) to or above a first threshold temperature such that the surface of the at least one conductor structure has a temperature greater than or equal to the first threshold temperature and the surface of the substrate has a temperature less than the first threshold temperature, wherein the Lewis adduct (110) forms from the first threshold temperature onwards, • wherein the conductor structure (108) comprises or is formed from a plurality of nanowires and wherein the conductor structure (108) comprises a Lewis acid or a Lewis base. [3] Method (300) according to claim 1 or 2, wherein the exposed surface (112) of the at least one conductor structure (108) is functionalized so that the Lewis adduct can be formed on the surface of the at least one conductor structure (108), wherein a proton donor or an electron donor is formed on the surface (112) of the at least one conductor structure (108) during functionalization. [4] Method (300) according to any one of claims 1 to 3, wherein the exposed surface (112) of the at least one conductor structure (108) is functionalized by means of a self-organizing monolayer, wherein the self-organizing monolayer has Lewis acidic head groups or Lewis basic head groups. [5] Method (300) according to any one of claims 1 to 4, wherein the substrate (102) has an electrically conductive layer (106) on a support (104), and the at least one conductor structure (108) is electrically conductive and electrically connected to the electrically conductive layer (106), and wherein at least in a region on or above the substrate (102), the at least one conductor structure (108) and the Lewis adduct (110) an organically functional layer structure (202) and on or above the organically functional layer structure (202) a further electrically conductive layer (204) is formed. [6] Method (300) according to one of claims 1 to 5, wherein the specified material is applied by wet chemical means, in particular dissolved in a solvent, at least onto the surfaces (112 / 114) of the at least one conductor structure (108) and the substrate (102). [7] Method (300) according to any one of claims 1 to 6, wherein the specified material has an oxetane group, in particular an oxetane-functionalized polymer. [8] Method (300) according to any one of claims 1 to 7, wherein the formation of the Lewis adduct (110) above the first threshold temperature involves a crosslinking reaction, in particular a living polymerization. [9] Method (300) according to any one of claims 1 to 8, wherein the temperature is increased to at least the first threshold temperature by means of an electric current through the conductor structure (108). [10] Method (300) according to any one of claims 1 to 9, wherein at least one first conductor structure (524) and a second conductor structure (526) are formed on the substrate (102), wherein the temperature of the first conductor structure (524) and the temperature of the second conductor structure (526) are increased substantially equally, in particular to approximately the same value of at least the first threshold temperature. [11] Method (300) according to any one of claims 1 to 9, wherein at least one first conductor structure (606) and a second conductor structure (608) are formed on the substrate (102), wherein the temperature of the first conductor structure (606) is increased to a temperature greater than the first threshold temperature and the temperature of the second conductor structure (608) remains substantially unchanged and / or below the first threshold temperature. [12] Method (300) according to any one of claims 1 to 11, further comprising: Removal of the specified material after the formation of the Lewis adduct (110) from the surface of the substrate (114) and from the Lewis adduct (110) on the exposed surface (112) of the at least one conductor structure (108). [13] Method (300) according to any one of claims 1 to 12, wherein the Lewis adduct (110) forms a dielectric layer on the exposed surface (112) of the at least one conductor structure (108), in particular an organic dielectric layer. [14] Method (300) according to any one of claims 1 to 13, further comprising: Forming another Lewis adduct (604) on the Lewis adduct (110) on the surface (112) of the at least one conductor structure (108). [15] Optoelectronic component comprising: an electrically conductive layer (106) on a substrate (102), at least one conductor structure (108) on the electrically conductive layer (106), wherein at least a part of the surface (114) of the electrically conductive layer (106) is free of conductor structure (108) and which has at least one conductor structure (108) with an exposed surface (118), a dielectric layer (110, 604) on the exposed surface (112) of the at least one conductor structure (108), wherein the surface (114, 116) of the electrically conductive layer (106) is substantially free of the dielectric layer (110, 604), and wherein the dielectric layer (110, 604) is formed from a Lewis adduct, and wherein the conductor structure (108) comprises or is formed from a plurality of nanowires and the conductor structure (108) comprises a Lewis acid or a Lewis base.

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