Die contact point, semiconductor device and method for manufacturing a semiconductor device

Abstract

The contact point, showing: a die contact point substrate (70); a first elevation (4, 4D) arranged on an upper surface of the die contact substrate (70), wherein the first elevation (4, 4D) has a base shape; a second protrusion (71, 71A, 71B, 71D) arranged on the upper surface of the die contact substrate (70) such that it surrounds at least a part of the first protrusion (4, 4D) in a plan view, wherein the second protrusion (71, 71A, 71B, 71D) has a bench shape; and a third protrusion (72, 72A, 72B, 72D) arranged on the upper surface of the die contact substrate (70) such that it surrounds at least part of the second protrusion (71, 71A, 71B, 71D) in a top view, wherein the third protrusion (72, 72A, 72B, 72D) has a bench shape, wherein the second elevation (71, 71A, 71B, 71D) is designed such that it continuously surrounds sides of the first elevation (4, 4D), with the exception of the first side of the first elevation (4, 4D) in the circumferential direction, in a top view, and wherein the third elevation (72, 72A, 72B, 72D) is designed such that it continuously surrounds sides of the first elevation (4, 4D), with the exception of the first side of the first elevation (4, 4D) in the circumferential direction, in a top view.

Description

Background of the invention; Field of the invention

[0001] The description discloses a technique relating to a die contact point, a semiconductor device, and a method for manufacturing the semiconductor device. Description of the state of the art

[0002] In recent years, integrated circuits (ICs) and highly integrated circuits (LSIs), for example, have required a high degree of integration. In particular, the thickness of semiconductor chips must be reduced to allow for improved stacking capabilities.

[0003] Such thickness reduction of semiconductor chips has also led to advances in the field of power semiconductors to reduce energy losses (e.g., published Japanese patent application no. 2001-127233). A typical semiconductor chip is connected to the top surface of a die contact on the top surface of a conductor frame using an interconnect material. Alternatively, the semiconductor chip is connected to the top surface of the die contact on the top surface of a semiconductor substrate using the interconnect material.

[0004] If the semiconductor chip is reduced to a thickness of, for example, 200 µm or less, the compound material spreads to the top surface of the semiconductor chip, potentially covering an electrode on that surface. Furthermore, if the semiconductor chip is reduced to a thickness of, for example, 200 µm or less, the compound material reaches both the top and bottom surfaces of the semiconductor chip, potentially causing an electrical short circuit between them.

[0005] US 2009 / 0152696A1 discloses a semiconductor device comprising an exposed conductor frame with a die pad and multiple traces. The die pad has a substantially flat lower surface and an upper surface. A semiconductor chip is attached to a chip mounting section of the upper surface. Downbonds connect the chip to a downbond mounting section. Standard bonds connect the chip to the terminals. A plastic package encapsulates the die, the standard bonds, and the downbonds. The upper surface of the chip pad has sections located at different levels and step-like transitions between two adjacent such sections.

[0006] JP H05-235 228 A discloses a metallic carrier plate prepared with at least one first and one second annular groove. A semiconductor chip is attached with a moving solder joint in a region enclosed by the first annular groove of this metallic carrier plate. The area of ​​a chafing zone is smaller than that of a region enclosed by a first annular groove. A resin sealing element covering a carrier plate to which the semiconductor chip is attached is provided.

[0007] CN 1 02 859 687 A discloses a method for manufacturing a semiconductor device, wherein a groove section is formed on each of the four corner sections of a chip mounting area, having a square planar shape that is smaller than the outer size of a chip pad containing the semiconductor. Each groove section is formed in the direction that intersects the diagonal line connecting the corner sections where the groove sections are located, and both ends of each groove section extend to the outside of the chip mounting area. A semiconductor chip is mounted on the chip mounting area with a die-bonding material in between. Summary

[0008] The present invention relates to a technique for preventing a bonding material from reaching the upper and lower surfaces of a semiconductor chip when connecting the semiconductor chip using the bonding material.

[0009] A die contact point according to a first aspect of the technique disclosed in the description comprises the following: a die contact point substrate; a first protrusion arranged on the upper surface of the die contact point substrate, wherein the first protrusion has a base shape; a second protrusion arranged on the upper surface of the die contact point substrate such that it surrounds at least a part of the first protrusion in a top view, wherein the second protrusion has a bench shape; and a third protrusion arranged on the upper surface of the die contact point substrate such that it surrounds at least a part of the second protrusion in a top view, wherein the third protrusion has a bench shape.

[0010] A semiconductor device according to a second aspect of the technology disclosed in the description comprises a die contact point and a semiconductor chip which is mounted above the upper surface of the die contact point by means of a connecting material.The die contact point comprises the following: a die contact point substrate; a first protrusion arranged on the upper surface of the die contact point substrate in an area provided with the semiconductor chip, wherein the first protrusion has a socket shape; a second protrusion arranged on the upper surface of the die contact point substrate such that it surrounds at least a portion of the first protrusion in a top view, wherein the second protrusion has a bench shape; and a third protrusion arranged on the upper surface of the die contact point substrate such that it surrounds at least a portion of the second protrusion in a top view, wherein the third protrusion has a bench shape.The semiconductor chip, which is positioned above the upper surface of the die contact substrate, has an end that is located above a first depression between the first protrusion and the second protrusion, above a second depression between the second protrusion and the third protrusion, or above the die contact substrate extending outwards from the third protrusion.

[0011] A method for manufacturing a semiconductor device according to a third aspect of the technology disclosed in the description comprises preparing a die contact point and placing a semiconductor chip over the upper surface of the die contact point using a bonding material. The preparation of the die contact point comprises: preparing a die contact point substrate; forming a first depression surrounding a partial area on the upper surface of the die contact point substrate to create a first protrusion having a socket shape; forming a second depression surrounding the first depression on the upper surface of the die contact point substrate to create a second protrusion having a bench shape; and forming a third depression surrounding the second depression on the upper surface of the die contact point substrate to create a third protrusion having a bench shape.The placement of the semiconductor chip above the top surface of the die contact substrate by the interconnect material is characterized by the following: The semiconductor chip is placed above the first protrusion located on the top surface of the die contact substrate by the interconnect material. When the semiconductor chip is placed above the top surface of the die contact substrate by the interconnect material, the semiconductor chip positioned above the top surface of the die contact substrate has one end that is located above the first depression, above the second depression, or above the third depression.

[0012] These and other tasks, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when viewed in conjunction with the accompanying drawings. Brief description of the drawings Fig. Figure 1 is a schematic perspective view of an arrangement for achieving a die contact point according to a preferred embodiment; Fig. Figure 2 is a perspective view of a structure in which a semiconductor chip is connected to the upper surface of the die contact point, which is provided with protrusions, according to the preferred embodiment; Fig. Figure 3 is a cross-sectional view of the structure, taken along line AA' in Fig. 2; Fig. Figure 4 is a perspective view of a structure according to the preferred embodiment, in which a single elevation surrounding another elevation in a top view is formed from a plurality of parts arranged at a distance from each other; Fig. Figure 5 is a schematic perspective view of an arrangement for achieving a die contact point according to a preferred embodiment; Fig. 6 is a perspective view of a structure in which a semiconductor chip is connected to the upper surface of a die contact point which is provided with protrusions, according to the preferred embodiment; Fig. Figure 7 is a schematic perspective view of an arrangement for achieving a die contact point according to a preferred embodiment; and Fig. Figure 8 is a cross-sectional view of an arrangement for achieving a die contact point according to a preferred embodiment. Description of preferred embodiments

[0013] The preferred embodiments are described with reference to the accompanying drawings.

[0014] The drawings are schematic, and therefore some arrangements are not shown or are only briefly depicted for the sake of simplicity. Furthermore, the relationships between the sizes and positions of images shown in different drawings are not necessarily exact and can therefore be adjusted as needed.

[0015] In the following descriptions, identical components are identified by the same reference symbols and are also given the same names and functions. Therefore, detailed descriptions of identical components may be omitted to avoid repetition.

[0016] In the following descriptions, all terms such as "top," "bottom," "left," "right," "side," "bottom," "front," and "back," which denote specific positions and directions, are used for the purpose of simplifying the understanding of the preferred embodiments. These terms therefore have no bearing on actual directions when the embodiments are implemented.

[0017] In the following descriptions, ordinal numbers such as "first" and "second," when they appear, are used for the purpose of simplifying the understanding of the preferred embodiments. The descriptions are therefore not limited to sequences resulting from these ordinal numbers. <Erste bevorzugte Ausführungsform>

[0018] The following describes a die contact point, a semiconductor device and a method for manufacturing the semiconductor device according to a first preferred embodiment. <Anordnung der Die-Kontaktstelle>

[0019] Fig. Figure 1 is a schematic perspective view of an arrangement for achieving the die contact point according to the first preferred embodiment. Given a simple understanding of the arrangement, Fig. 1. exhibit an omission or simplification of some components.

[0020] As in Fig. As shown in Figure 1, the die contact point comprises the following: a die contact point substrate 70; a protrusion 4 arranged on the upper surface of the die contact point substrate 70, wherein the protrusion 4 has a base shape; a protrusion 71 arranged on the upper surface of the die contact point substrate 70 such that it surrounds the protrusion 4 in a top view, wherein the protrusion 71 has a bench shape; and a protrusion 72 arranged on the upper surface of the die contact point substrate 70 such that it further surrounds the protrusion 71 in a top view, wherein the protrusion 72 has a bench shape.

[0021] The slab 4, the slab 71, and the slab 72 are integrated with the die contact surface substrate 70. The slab 4, the slab 71, and the slab 72 are also formed, for example, by stamping, etching, or layering.

[0022] Although Fig. Figure 1 shows that two protrusions, which are protrusion 71 and protrusion 72, surround protrusion 4 in a top view. Any number of protrusions can surround protrusion 4 in a top view. That is, more than two protrusions can surround protrusion 4 in a top view. Alternatively, a single protrusion can surround protrusion 4 on its own. The number of protrusions surrounding protrusion 4 in a top view can be changed as a consequence of requirements for individual semiconductor chips when the majority of semiconductor chips are arranged on the top surface of the die contact substrate 70.

[0023] The following description relates to a semiconductor chip 1, a semiconductor chip 11 and a semiconductor chip 12, wherein the semiconductor chip 1 has an area sufficient to cover the protrusion 4 in a top view, wherein the semiconductor chip 11 has an area sufficient to cover the protrusion 4 and the protrusion 71 in a top view, and wherein the semiconductor chip 12 has an area sufficient to cover the protrusion 4, the protrusion 71 and the protrusion 72 in a top view.

[0024] Fig. Figure 2 is a perspective view of a structure in which the semiconductor chip 11 is connected to the upper surface of the die contact substrate 70, which is provided with the protrusion 4, the protrusion 71 and the protrusion 72. Fig. Figure 3 is a cross-sectional view of the structure, taken along line AA' in Fig. 2.

[0025] As in Fig. 2 and Fig. As shown in Figure 3, the semiconductor chip 11 is connected to the upper surface of the die contact substrate 70 by a bonding material 3. The semiconductor chip 11 extends from an area provided with the protrusion 4 over an area provided with the protrusion 71.

[0026] Although in Fig. 2 and Fig. Figure 3 (not shown) shows the die contact point arranged on the upper surface of a semiconductor substrate as part of the semiconductor substrate; alternatively, the die contact point is arranged on the upper surface of a conductor frame as part of the conductor frame. The die contact point consists of a conductive component.

[0027] For example, a conductive wire or a conductive metal material is attached to the upper surface of the semiconductor chip 11 to create an electrical conductor.

[0028] The semiconductor chip 11 has ends that are each located above a depression 101 between the protrusion 71 and the protrusion 72. In other words, the ends of the semiconductor chip 11 are located beyond the outer perimeter of the protrusion 71.

[0029] Fig. 2 and Fig. Figure 3 shows that each side of the outer circumference of the elevation 71 is shorter than the corresponding side of the semiconductor chip 11. Fig. 2 and Fig. Figure 3 also shows that each side of the inner circumference of the elevation 72 is longer than the corresponding side of the semiconductor chip 11.

[0030] The semiconductor chip 11 is connected to the protrusion 4 and the protrusion 71 by the connecting material 3.

[0031] More precisely, a necessary quantity of the connecting material 3 is first provided by dispensing and printing onto the upper surface of the individual protrusions, that is, the upper surface of protrusion 4 and the upper surface of protrusion 71.

[0032] The semiconductor chip 11 is then mounted using a semiconductor chip mounting device, such as a mounter or a die bonder. At this point, the bonding material 3 is forced through the semiconductor chip 11, spreading to the top surface of each protrusion. The bonding material 3 then reaches the ends of each protrusion and finally falls down, spreading to the top surface of the die contact substrate 70.

[0033] The bonding material 3 can be provided in any manner. Accordingly, the bonding material 3 can be concentrated at a single location on the upper surface of the elevation 4 or at a single location on the upper surface of the elevation 71. Alternatively, the bonding material 3 can be distributed to multiple locations.

[0034] The connecting material 3 can also be provided in such a way that it spreads over the upper surface of the protrusion 4 and over the upper surface of the protrusion 71, provided that the connecting material 3 is provided in such a way that it is always present inside the semiconductor chip 11 in a top view.

[0035] The elevation 4 and the elevation 71 surround a depression 100. The quantity and location of the connecting material 3 are to be provided in such a way that the depression 100 is filled with the connecting material 3, and that the depression 101, which is surrounded by the elevation 71 and the elevation 72, is partially but not completely filled with the connecting material 3.

[0036] Accordingly, when the compound material 3 is provided, it falls down the well 100 and then down the well 101 before reaching the ends of the semiconductor chip 11. Consequently, the amount of compound material 3 spreading to the side surfaces and top surface of the semiconductor chip 11 decreases, while the amount spreading to the top surface of the die contact substrate 70 increases. This prevents the compound material 3 from reaching the side surfaces and top surface of the semiconductor chip 11.

[0037] Although in Fig. 2 and Fig. Not shown in Figure 3, the semiconductor chip 1 has ends that are each located above the recess 100, which is situated between the protrusion 4 and the protrusion 71. That is, each end of the semiconductor chip 1 is located beyond the corresponding side surface of the protrusion 4.

[0038] Furthermore, although in Fig. 2 and Fig. 3 not shown, the semiconductor chip 1 is designed such that each side of the outer circumference of the protrusion 4 is shorter than the corresponding side of the semiconductor chip 1. Furthermore, although in Fig. 2 and Fig. 3 not shown, the semiconductor chip 1 is designed such that each side of the inner circumference of the protrusion 71 is longer than the corresponding side of the semiconductor chip 1.

[0039] Although in Fig. 2 and Fig. Not shown in Figure 3, the semiconductor chip has 12 ends, each located above the die contact substrate 70, which extends outwards from the protrusion 72.

[0040] Even further, although in Fig. 2 and Fig. 3 not shown, the semiconductor chip 12 is designed such that each side of the outer circumference of the protrusion 72 is shorter than the corresponding side of the semiconductor chip 12.

[0041] When the semiconductor chip 1 is connected, the amount and location of the connecting material 3 is regulated so that the recess 100 is partially but not completely filled with the connecting material 3.

[0042] When the semiconductor chip 12 is connected, the amount and location of the connecting material 3 is regulated such that the recess 100 and the recess 101 are filled with the connecting material 3, and that the connecting material 3 falls down the upper surface of the die contact substrate 70, which extends outwards from the protrusion 72.

[0043] This prevents the bonding material 3 from reaching the side surfaces and the top surface of each semiconductor chip when one of the semiconductor chip 1, the semiconductor chip 11 and the semiconductor chip 12, which are of different sizes, is placed on the top surface of the same die contact substrate 70 in accordance with types of semiconductor devices.

[0044] At this point, the outer perimeter of the protrusion corresponding to the individual semiconductor chip preferentially has sides which, considering all factors such as the semiconductor chip mounting accuracy of a device on which a semiconductor chip is to be mounted, variations in sawing a semiconductor substrate into semiconductor chips, and the accuracy of forming protrusions on the upper surface of the die contact substrate 70, are each, for example, 100 µm or more shorter than the corresponding side of the semiconductor chip.

[0045] In other words, each side of the protrusion 4 is preferably 100 µm or more shorter in a top view than the corresponding side of the semiconductor chip 1. Furthermore, each side of the outer circumference of the protrusion 71 is preferably 100 µm or more shorter in a top view than the corresponding side of the semiconductor chip 11. Even further, each side of the outer circumference of the protrusion 72 is preferably 100 µm or more shorter in a top view than the corresponding side of the semiconductor chip 12.

[0046] Such an interpretation makes it more likely that the ends of the semiconductor chip are located beyond the outermost protrusion.

[0047] The aforementioned ratios relating to lengths reduce conditions in which a misalignment between each semiconductor chip and the corresponding protrusion causes one side of the semiconductor chip to not extend beyond the smaller protrusion. This prevents the interconnect material 3 from reaching the ends of the semiconductor chip before it reaches the ends of the protrusion.

[0048] The elevation 71 and the elevation 72, which surround elevation 4 in a top view, do not need to be a single continuous elevation.

[0049] Fig. Figure 4 is a perspective view of a structure in which the individual elevation surrounding elevation 4 in a top view is composed of a plurality of parts arranged at a distance from each other.

[0050] As in Fig. As shown in Figure 4, the die contact point comprises the following: the die contact point substrate 70; the protrusion 4, which is arranged on the upper surface of the die contact point substrate 70, wherein the protrusion 4 has a base shape; a protrusion 71A, which is arranged on the upper surface of the die contact point substrate 70 such that it surrounds the protrusion 4 in a top view; and a protrusion 72A, which is arranged on the upper surface of the die contact point substrate 70 such that it further surrounds the protrusion 71A in a top view.

[0051] Survey 71A includes surveys 711, 712, 713, and 714. Survey 72A also includes surveys 721, 722, 723, and 724.

[0052] Reference is made to survey 71A. Surveys 711 and 713 are located in opposite positions. Surveys 712 and 714 are also located in opposite positions.

[0053] Reference is now made to survey 72A. Surveys 721 and 723 are located in opposite positions. Surveys 722 and 724 are also located in opposite positions.

[0054] At this point, for example when the semiconductor chip 11 is mounted, the connecting material 3, which has reached the ends of the protrusion 71A, falls down into the recess 100 between the protrusion 71A and the protrusion 72A. A larger quantity of connecting material 3 than necessary, if any, causes the connecting material 3 to spread to an upper part of the protrusion 72A when it reaches it.

[0055] However, the protrusion 72A has a plurality of protrusions arranged at a distance from one another, namely protrusion 721, protrusion 722, protrusion 723, and protrusion 724. Accordingly, the connecting material 3 passes between these spaced protrusions of the protrusion 72A in order to exit outside the protrusion 72A. This prevents the connecting material 3 from spreading to the upper surface of the protrusion 72A and further prevents the connecting material 3 from spreading to the side surfaces of the semiconductor chip 11 and the upper surface of the semiconductor chip 11.

[0056] The bonding material 3 can be a resin adhesive. Alternatively, the bonding material 3 can be a metal bonding material such as a solder or a molten material. The use of a conductive bonding material such as a solder, silver paste, or molten silver enables the first preferred embodiment to be used in a semiconductor device that needs to establish an electrical connection from the upper surface of a semiconductor chip, through the interior of the semiconductor chip, to the lower surface of the semiconductor chip, protrusions, and further to a die contact point. <Zweite bevorzugte Ausführungsform>

[0057] The following describes a die contact point, a semiconductor device, and a method for fabricating the semiconductor device according to a second preferred embodiment. In the following description, components similar to those described in the aforementioned preferred embodiment are designated by the same reference numerals, and detailed descriptions of the similar components are omitted where necessary. <Anordnung der Die-Kontaktstelle>

[0058] Fig. Figure 5 is a schematic perspective view of an arrangement for achieving the die contact point according to the second preferred embodiment. Given a simple understanding of the arrangement, Fig. 5. exhibit an omission or simplification of some of the components.

[0059] As in Fig. As shown in Figure 5, the die contact point comprises the following: the die contact point substrate 70; the protrusion 4 arranged on the upper surface of the die contact point substrate 70, the protrusion 4 having a base shape; a protrusion 71B arranged on the upper surface of the die contact point substrate 70 such that it partially surrounds the protrusion 4 in a top view; and a protrusion 72B arranged on the upper surface of the die contact point substrate 70 such that it partially surrounds the protrusion 71B in a top view.

[0060] The projection 71B is designed to partially surround the projection 4 in a plan view. In other words, the projection 71B does not completely surround the outline of the projection 4 in a plan view; that is, the projection 71B has such a shape that its outline is partially missing. If the projection 4 is rectangular in a plan view, the projection 71B is missing something at a point close to the projection 4 that is opposite at least one of the sides of the projection 4 or a part of that side, as shown in Fig. 5 shown.

[0061] The projection 72B is similarly designed to partially surround projection 4 in a plan view, and is also similarly designed to partially surround projection 71B in a plan view. In other words, projection 72B does not completely surround the outline of projection 71B in a plan view; that is, projection 72B has such a shape that its outline has gaps in some areas. If projection 71B is rectangular in a plan view, projection 72B has gaps at a point adjacent to projection 71B that is opposite at least one of the sides of projection 71B or parts of that side, as shown in Fig. 5 shown.

[0062] Semiconductor chip 1, semiconductor chip 11, or semiconductor chip 12 is positioned such that one side of the semiconductor chip is located outside one of the four sides of protrusion 4. Reference is made to the three remaining sides of each semiconductor chip. For semiconductor chip 1, the three remaining sides are located outside protrusion 4; for semiconductor chip 11, outside protrusion 71B; and for semiconductor chip 12, outside protrusion 72B.

[0063] Fig. Figure 6 is a perspective view of a structure in which the semiconductor chip 11 is connected to the upper surface of the die contact substrate 70, which is provided with the protrusion 4, the protrusion 71B, and the protrusion 72B. It should be noted that any number of protrusions other than three may be provided, as shown in Figure 6. Fig. Figure 6 is shown. In some embodiments, further additional projections are provided which partially surround projection 4 in a top view. Alternatively, a single projection may be provided which partially surrounds projection 4.

[0064] For semiconductor chips of different sizes, this arrangement allows one side of each individual semiconductor chip to be located in a common position. That is, one side of each semiconductor chip, where one side lacks protrusion 71B and the other lacks protrusion 72B, is located in the same position. This achieves a uniform distance between a given location and the differently sized semiconductor chips. <Dritte bevorzugte Ausführungsform>

[0065] The following describes a die contact point, a semiconductor device, and a method for fabricating the semiconductor device according to a third preferred embodiment. In the following description, components similar to those described in the aforementioned preferred embodiments are identified by the same reference numerals, and detailed descriptions of the similar components are omitted where necessary. <Verfahren zum Ausbilden von Erhebungen>

[0066] The following is a description of a procedure for forming individual surveys arranged on the Die contact point substrate 70.

[0067] Each elevation, as described in the above-mentioned preferred embodiments, need not be exposed upwards from the die contact point substrate 70. Fig. Figure 7 is a schematic perspective view of an arrangement for achieving the die contact point according to the third preferred embodiment. Given a simple understanding of the arrangement, Fig. 7. exhibit an omission or simplification of some of the components.

[0068] As in Fig. As shown in Figure 7, the method comprises forming an annular depression 9 on the upper surface of the die contact substrate 70 to form a protrusion 4C having a base shape. The method further comprises forming a plurality of depressions: a depression 91; and a depression 92 in the outer circumference of the depression 9, such that a protrusion 71C having a bench shape and a protrusion 72C having a bench shape are formed.

[0069] At this stage, the top surface of the die contact substrate 70 is flush with the top surface of the protrusion 4C, before each depression is formed. Each depression simply needs to be formed by stamping or etching. For a conductor frame, the formation of each depression can coincide with the forming of the conductor frame; furthermore, for a semiconductor substrate, the formation of each depression can coincide with the formation of the die contact. Each protrusion is thus simply formed.

[0070] It should be noted that a plurality of depressions may be formed in the outer perimeters of the three remaining sides of the depression, except for one side, so that the structures are as in Fig. 5 and Fig. 6 can be set up to provide a limited position for attaching the semiconductor chip. <Vierte bevorzugte Ausführungsform>

[0071] The following describes a die contact point, a semiconductor device, and a method for fabricating the semiconductor device according to a fourth preferred embodiment. In the following description, components similar to those described in the aforementioned preferred embodiments are identified by the same reference numerals, and detailed descriptions of the similar components are omitted where necessary. <Anordnung einer Die-Kontaktstelle>

[0072] Fig. Figure 8 is a schematic cross-sectional view of an arrangement for achieving the die contact point according to the fourth preferred embodiment. Given a simple understanding of the arrangement, Fig. 8. Include an omission or simplification of some of the components.

[0073] As in Fig. As shown in Figure 8, the die contact point comprises the following: the die contact point substrate 70; a protrusion 4D arranged on the upper surface of the die contact point substrate 70, wherein the protrusion 4D has a base shape; a protrusion 71D arranged on the upper surface of the die contact point substrate 70 such that it surrounds the protrusion 4D in a top view, wherein the protrusion 71D has a bench shape; and a protrusion 72D arranged on the upper surface of the die contact point substrate 70 such that it further surrounds the protrusion 71D in a top view, wherein the protrusion 72D has a bench shape.

[0074] As in Fig. As shown in Figure 8, the elevation 4D is provided with side surfaces, each having an inclined shape 200 that extends outwards towards a lower position of the elevation 4D, i.e., extending from the upper surface of the elevation 4D outwards towards the lower surface of a depression 100A. As shown in Fig. As shown in Figure 8, the elevation 71D is provided with an outer circumferential surface having an inclined shape 201, which extends outwards towards a lower position of the elevation 71D, i.e., from the upper surface of the elevation 71D towards the lower surface of a depression 101A. As shown in Fig.As shown in Figure 8, the elevation 72D is provided with an outer circumferential surface having an inclined shape 202, which extends outwards towards a lower position of the elevation 72D, i.e., extends from the upper surface of the elevation 72D outwards towards the upper surface of the die contact substrate 70, which is adjacent to the outer circumference of the elevation 72D.

[0075] Accordingly, the bonding material 3 falls down the depressions between the positions along the slopes. Thus, the bonding material 3 is stably distributed at the corners formed by each protrusion and the die contact substrate 70, i.e., corners on the lower surface of each depression.

[0076] For example, when the semiconductor chip 11 is connected, the bonding material 3, which is provided to the upper surface of the protrusion 4D, spreads along the inclined shape 200. The bonding material 3 then spreads to the inner corners of the depression 100A and further to the outer corners of the depression 100A.

[0077] The bonding material 3 then reaches the upper surface of the elevation 71 D and spreads further along the inclined shape 201. The bonding material 3 then spreads to the inner corners of the depression 101A and further to the outer corners of the depression 101A.

[0078] When the semiconductor chip 12 is connected, the interconnect material 3 reaches the upper surface of the protrusion 72D and spreads further along the inclined shape 202. The interconnect material 3 then spreads to the outer corners of the protrusion 72D.

[0079] This reduces air bubbles at the inner and outer corners of the depression and further at the outer corners of the protrusion 72D. This prevents the bonding material 3 from reaching the top surface and side surfaces of the semiconductor chip, thus maintaining a uniform bond quality. <Wirkungen der vorstehend genannten bevorzugten Ausführungsformen>

[0080] The following describes the effects of the aforementioned preferred embodiments. Although these effects are based on specific arrangements illustrated in the preferred embodiments described above, these specific arrangements can be replaced, to the extent that similar effects are achieved, by different specific embodiments, which are described in the description.

[0081] The exchange can be carried out via several preferred embodiments. That is, combinations of the individual arrangements, which are shown in the different preferred embodiments, can produce similar effects.

[0082] In the preferred embodiment described above, the die contact point comprises the die contact point substrate 70, a first projection having a base shape, a second projection having a bench shape, and a third projection having a bench shape. The first projection having a base shape is arranged on the upper surface of the die contact point substrate 70. The second projection is arranged on the upper surface of the die contact point substrate 70 such that, in a top view, it surrounds at least a portion of the first projection. The third projection is arranged on the upper surface of the die contact point substrate 70 such that, in a top view, it surrounds at least a portion of the second projection. Here, the first projection corresponds, for example, to projection 4; the second projection to projection 71; and the third projection to projection 72.

[0083] Due to this arrangement, the depressions between the protrusions on the upper surface of the die contact substrate 70 are filled with the compounding material 3, or the compounding material 3 oozes out to the upper surface of the die contact substrate 70, spreading outwards from the protrusion of the die contact substrate 70 when the semiconductor chip is connected using the compounding material 3. This prevents the compounding material 3 from reaching the upper or lower surface of the semiconductor chip. Furthermore, such an arrangement, in which a plurality of depressions are provided, is applicable to semiconductor chips of different sizes.

[0084] It should be noted that various arrangements described in the text, other than those mentioned above, may be omitted if necessary. That is to say, at least the above arrangements alone will produce the effects described above.

[0085] The foregoing arrangements may, however, additionally include, if necessary, at least one of the different arrangements described in the text; that is to say, the foregoing arrangements may additionally include the different arrangements described in the present text that are excluded from these arrangements. Such additionally included arrangements still produce the effects described above.

[0086] In the preferred embodiment described above, the projection 71A has a plurality of projections arranged at intervals along its circumference. This arrangement allows the connecting material 3 to emerge from gaps along the circumference of the projection 71A. This effectively prevents the connecting material 3 from reaching the upper surface of the semiconductor chip or from reaching the lower surface of the semiconductor chip.

[0087] In the preferred embodiment described above, the projection 72A has a plurality of projections arranged at intervals along its circumference. This arrangement allows the connecting material 3 to emerge from gaps along the circumference of the projection 72A. This effectively prevents the connecting material 3 from reaching the upper surface of the semiconductor chip or from reaching the lower surface of the semiconductor chip.

[0088] In the preferred embodiment described above, the projection 71B is designed to partially surround the projection 4 in a top view. Due to this arrangement, the depressions between the projections on the upper surface of the die contact substrate 70 are filled with the compound material 3, or the compound material 3 extends to the upper surface of the die contact substrate 70, spreading outwards from the projection of the die contact substrate 70. This prevents the compound material 3 from reaching the upper or lower surface of the semiconductor chip.

[0089] In the preferred embodiment described above, the projection 72B is configured to partially surround the projection 71B in a top view. Due to this arrangement, the depressions between the projections on the upper surface of the die contact substrate 70 are filled with the compound material 3, or the compound material 3 extends to the upper surface of the die contact substrate 70, spreading outwards from the projection of the die contact substrate 70. This prevents the compound material 3 from reaching the upper or lower surface of the semiconductor chip. Furthermore, the projection 71B and the projection 72B can be configured so that they do not surround the same sides of the semiconductor chip.If semiconductor chips of different sizes are used, one side of each chip, not enclosed by protrusions 71B and 72B, would be positioned in the same location. This ensures a consistent distance between a given point and each of the differently sized semiconductor chips. A wire, for example, can be used to connect the semiconductor chips. In this case, the semiconductor chip is positioned close to one end of the wire, away from the semiconductor chip. This allows the wire to be short.

[0090] In the preferred embodiment described above, the projection 4D is provided with side surfaces, each having an inclined shape 200 extending outwards from the upper surface of the projection 4D towards the upper surface of the die contact substrate 70 adjacent to the outer circumference of the projection 4D. In such an arrangement, the bonding material 3, which is provided on the upper surface of the projection 4D, spreads along the inclined shape 200 when the semiconductor chip 11 is connected. The bonding material 3 then spreads to the inner corners of the recess 100A and further to the outer corners of the recess 100A.This eases the following situation: The bonding material 3 emerges from the upper surface of the elevation 4D to spread over the depression 100A; and at this time air bubbles are generated at the inner corners of the depression 100A and further at the external corners of the depression 100A.

[0091] In the preferred embodiment described above, the projection 71D is provided with side surfaces, each having an inclined shape 201 extending outwards from the upper surface of the projection 71D towards the upper surface of the die contact substrate 70 adjacent to the outer circumference of the projection 71D. In such an arrangement, the bonding material 3, which is provided on the upper surface of the projection 4D, spreads along the inclined shape 201 across the upper surface of the projection 71D when the semiconductor chip 11 is connected. The bonding material 3 then spreads to the internal corners of the recess 101A and further to the external corners of the recess 101A.This eases the following situation: The bonding material 3 emerges from the upper surface of the protrusion 71 D to spread over the depression 101A; and at this time air bubbles are generated at the internal corners of the depression 101A and further at the external corners of the depression 101A.

[0092] In the preferred embodiment described above, the protrusion 72D is provided with side surfaces, each having an inclined shape 202 extending outwards from the upper surface of the protrusion 72D towards the upper surface of the die contact substrate 70 adjacent to the outer circumference of the protrusion 72D. In such an arrangement, the bonding material 3 reaches the upper surface of the protrusion 72D and then spreads further along the inclined shape 202 when the semiconductor chip 12 is connected. The bonding material 3 then spreads to the outer corners of the protrusion 72D. This alleviates the following situation: The bonding material 3 emerges from the upper surface of the protrusion 72D to spread to the outer circumference of the protrusion 72D; and at this time, air bubbles are generated at the outer corners of the protrusion 72D.

[0093] In the preferred embodiment described above, the semiconductor device comprises the die contact point and the semiconductor chip 11. The semiconductor chip 11 is mounted above the upper surface of the die contact point by means of the connecting material 3. The die contact point comprises the die contact point substrate 70, the projection 4 having a socket shape, the projection 71 having a bench shape, and the projection 72 having a bench shape. The projection 4 having a socket shape is arranged on the upper surface of the die contact point substrate 70 in a region provided with the semiconductor chip 11. The projection 71 having a bench shape is arranged on the upper surface of the die contact point substrate 70 such that, in a top view, it surrounds at least a portion of the projection 4.The protrusion 72, which has a bench-like shape, is arranged on the upper surface of the die contact substrate 70 such that, in a top view, it surrounds at least a portion of the protrusion 71. The semiconductor chip 11, which is arranged above the upper surface of the die contact substrate 70, has ends that are located above a first recess between the protrusion 4 and the protrusion 7, above a second recess between the protrusion 71 and the protrusion 72, or above the die contact substrate 70, which extends outwards from the protrusion 72. The first recess corresponds, for example, to recess 100. Furthermore, the second recess corresponds, for example, to recess 101.

[0094] In such an arrangement, the depressions on the upper surface of the die contact substrate 70 are filled with the compounding material 3, or the compounding material 3 extends to the upper surface of the die contact substrate 70, spreading outwards from the raised area of ​​the die contact substrate 70 when the semiconductor chip is connected using the compounding material. This prevents the compounding material 3 from reaching the upper or lower surface of the semiconductor chip. Such an arrangement, in which a plurality of depressions are provided, is applicable to semiconductor chips of different sizes.

[0095] It should be noted that various arrangements described in the text, other than those mentioned above, may be omitted if necessary. That is to say, at least the above arrangements alone will produce the effects described above.

[0096] The foregoing arrangements may, if necessary, additionally include at least one of the different arrangements described in the text; that is, the foregoing arrangements may additionally include the different arrangements described in the present text that are excluded from these arrangements. Such additionally included arrangements still produce the effects described above.

[0097] In the embodiment described above, each end of the semiconductor chip 1 is located above the recess 100, and the semiconductor chip 1 has a width that is 100 µm or more greater than the width of an area provided with the protrusion 4. Furthermore, each end of the semiconductor chip 11 is located above the recess 101, and the semiconductor chip 11 has a width that is 100 µm or more greater than the width of an area provided with the protrusion 71. Finally, when each end of the semiconductor chip 12 is located above the die contact substrate 70, which extends outwards from the protrusion 72, the semiconductor chip 12 has a width that is 100 µm or more greater than the width of an area provided with the protrusion 72.Such an arrangement would prevent the connecting material 3 from reaching the upper surface of the semiconductor chip or the lower surface of the semiconductor chip, taking into account variations such as tolerance in the processing of a typical semiconductor chip, tolerance in the processing of a typical conductor frame, and accuracy in the assembly of the semiconductor chip.

[0098] In the preferred embodiment described above, the connecting material 3 is conductive. In such an arrangement, the use of a conductive material such as solder, Ag paste, or molten silver as the connecting material 3 enables the die contact point, according to the preferred embodiment, to be used for a semiconductor device that needs to establish an electrical connection between a bonding surface of a semiconductor chip and the die contact point.

[0099] In the aforementioned preferred embodiment, a method for manufacturing a semiconductor device comprises preparing a die contact point and placing a semiconductor chip over the upper surface of the die contact point using the interconnect material 3. The step of preparing the die contact point includes the following: preparing the die contact point substrate 70; forming a depression 9, surrounding a partial area, on the upper surface of the die contact point substrate 70 to create a protrusion having a socket shape; forming a depression 91, surrounding the depression 9, on the upper surface of the die contact point substrate 70 to create a second protrusion having a bench shape; and forming a third depression, surrounding the depression 91, on the upper surface of the die contact point substrate 70 to create a third protrusion having a bench shape.Here, the third depression corresponds, for example, to depression 92. Furthermore, the first elevation corresponds, for example, to elevation 4C. Even further, the second elevation corresponds, for example, to elevation 71C. And even further, the third elevation corresponds, for example, to elevation 72C. The step of placing the semiconductor chip above the upper surface of the die contact point by the interconnect material 3 involves placing the semiconductor chip 11 in an area surrounded by the depression 9, which is located on the upper surface of the die contact point substrate 70, by the interconnect material 3.When the semiconductor chip is placed above the top surface of the die contact point by the connecting material 3, the semiconductor chip 11, which is placed above the top surface of the die contact point substrate 70, has ends that are located above the recess 9, above the recess 91 or above the recess 92, respectively.

[0100] In such an arrangement, the depressions arranged on the upper surface of the die contact substrate 70 are filled with the compound material 3, or the compound material 3 oozes out onto the upper surface of the die contact substrate 70, spreading outwards from the protrusions of the die contact substrate 70 when the semiconductor chip is connected using the compound material 3. This prevents the compound material 3 from reaching the upper surface of the lower surface of the semiconductor chip. Furthermore, the upper surface of the die contact substrate 70 is subjected to processing, such as stamping or etching, to form depression 9, depression 91, and depression 92. This enables the fabrication of the semiconductor device according to the preferred embodiment.Furthermore, this arrangement, in which the majority of recesses are formed, is applicable to semiconductor chips that have different sizes.

[0101] It should be noted that various arrangements described in the text, other than those mentioned above, may be omitted if necessary. That is to say, at least the above arrangements alone will produce the effects described above.

[0102] The foregoing arrangements may, if necessary, additionally include at least one of the different arrangements described in the text; that is, the foregoing arrangements may additionally include the different arrangements described in the present text that are excluded from these arrangements. Such additionally included arrangements still produce the effects described above.

[0103] The sequence of individual process steps can be changed unless it is otherwise particularly restricted. <Modifikationen der vorstehend genannten bevorzugten Ausführungsformen>

[0104] The material quality, material, size and shape of each component, the positions of components relative to each other, and conditions for implementation described in each of the aforementioned preferred embodiments are descriptive in all aspects. Thus, they are not limited to what is described in the present invention.

[0105] Accordingly, numerous variations not shown can be assumed within the scope of validity of the technology disclosed in the description. Examples of such variations include the modification, addition, and omission of at least one component. Another example is extracting at least one component from at least one of the preferred embodiments and then combining the extracted component with another component from a different preferred embodiment.

[0106] Unless otherwise stated, “a” component as described in any of the preferred embodiments may contain “one or more” components.

[0107] Individual components are conceptual units. Thus, within the technology disclosed in the description, a component can have multiple structures, a component can correspond to a part of a structure, and multiple components can be contained within a structure.

[0108] Each component has a structure of a different arrangement or a different shape, as long as the structure of the different arrangement or shape achieves the same function.

[0109] Reference is made to the descriptions in this document for all purposes relating to the present technique. It is therefore not an acknowledgment that each of the descriptions provided herein represents a conventional technique.

[0110] Where the aforementioned preferred embodiments contain descriptions of materials without them being specifically specified, it shall be understood that an example of such materials is an alloy which has other additions in these materials, unless otherwise contradicted.

[0111] Although the invention has been shown and described in detail, the foregoing description is descriptive in all aspects and not limiting. It should therefore be understood that numerous modifications and variations can be designed without departing from the scope of the invention.

[0112] In summary, the description discloses a technique for preventing an interconnect material from reaching the upper and lower surfaces of a semiconductor chip when connecting the semiconductor chip using the interconnect material.A die contact point of the technique disclosed in the description comprises the following: a die contact point substrate 70; a first protrusion 4, 4D arranged on the upper surface of the die contact point substrate, wherein the first protrusion 4, 4D has a base shape; a second protrusion 71, 71A, 71B, 71D arranged on the upper surface of the die contact point substrate such that it surrounds at least a part of the first protrusion in a top view, wherein the second protrusion 71, 71A, 71B, 71D has a bench shape; and a third protrusion 72, 72A, 72B, 72D arranged on the upper surface of the die contact point substrate such that it surrounds at least a part of the second protrusion in a top view, wherein the third protrusion 72, 72A, 72B, 72D has a bench shape. Reference symbol list 3 Connecting material 4, 4C, 4D first survey 9 first in-depth study 11 Semiconductor chip 70 contact point substrate 71, 71A - 71D second survey 72, 72A - 72D third survey 91 second in-depth study 92 third in-depth study 100, 100A first in-depth study 101, 101A second indentation 200, 201, 202 inclined shape 711 - 714 Survey

Claims

[1] The contact point, showing: a die contact point substrate (70); a first elevation (4, 4D) arranged on an upper surface of the die contact substrate (70), wherein the first elevation (4, 4D) has a base shape; a second protrusion (71, 71A, 71B, 71D) arranged on the upper surface of the die contact substrate (70) such that it surrounds at least a part of the first protrusion (4, 4D) in a plan view, wherein the second protrusion (71, 71A, 71B, 71D) has a bench shape; and a third protrusion (72, 72A, 72B, 72D) arranged on the upper surface of the die contact substrate (70) such that it surrounds at least part of the second protrusion (71, 71A, 71B, 71D) in a top view, wherein the third protrusion (72, 72A, 72B, 72D) has a bench shape, wherein the second elevation (71, 71A, 71B, 71D) is designed such that it continuously surrounds sides of the first elevation (4, 4D), with the exception of the first side of the first elevation (4, 4D) in the circumferential direction, in a top view, and wherein the third elevation (72, 72A, 72B, 72D) is designed such that it continuously surrounds sides of the first elevation (4, 4D), with the exception of the first side of the first elevation (4, 4D) in the circumferential direction, in a top view. [2] Die contact point according to claim 1, wherein the second protrusion (71B) is provided such that it partially surrounds the first protrusion (4, 4D) in a top view. [3] Die contact point according to one of claims 1 or 2, wherein the third protrusion (72B) is provided such that it partially surrounds the second protrusion (71, 71A, 71B, 71D) in a top view. [4] Die contact point according to any one of claims 1 to 3, wherein the first protrusion (4D) has a side surface having an inclined shape (200) which extends from an upper surface of the first protrusion (4D) outwards in the direction of the upper surface of the die contact point substrate (70), adjacent to an outer periphery of the first protrusion (4D). [5] Die contact point according to any one of claims 1 to 4, wherein the second protrusion (71D) has a side surface having an inclined shape (201) which extends from an upper surface of the second protrusion (71D) outwards towards the upper surface of the die contact point substrate (70), adjacent to an outer periphery of the second protrusion (71D). [6] Die contact point according to any one of claims 1 to 5, wherein the third protrusion (72D) has a side surface having an inclined shape (202) which extends from an upper surface of the third protrusion (72D) outwards towards the upper surface of the die contact point substrate (70), adjacent to an outer periphery of the third protrusion (72D). [7] Semiconductor device comprising: a Die contact point; and a semiconductor chip (1, 11, 12) arranged by a connecting material (3) over an upper surface of the die contact point, where the die contact point has a die contact point substrate (70), a first protrusion (4, 4D) arranged on an upper surface of the die contact substrate (70) in an area provided with the semiconductor chip (1, 11, 12), wherein the first protrusion (4, 4D) has a socket shape, a second protrusion (71, 71A, 71B, 71D) arranged on the upper surface of the die contact substrate (70) such that it surrounds at least part of the first protrusion (4, 4D) in a top view, wherein the second protrusion (71, 71A, 71B, 71D) has a bench shape, and a third protrusion (72, 72A, 72B, 72D) arranged on the upper surface of the die contact substrate (70) such that it surrounds at least part of the second protrusion (71, 71A, 71B, 71D) in a top view, wherein the third protrusion (72, 72A, 72B, 72D) has a bench shape, and wherein the semiconductor chip (1, 11, 12), which is arranged above the upper surface of the die contact substrate (70), has an end that is located above a first depression (100, 100A, 9) between the first protrusion (4, 4D) and the second protrusion (71, 71A, 71B, 71D), above a second depression (101, 101A, 91) between the second protrusion (71, 71A, 71B, 71D) and the third protrusion (72, 72A, 72B, 72D) or above the die contact substrate (70) which extends outwards from the third protrusion (72, 72A, 72B, 72D), wherein the second elevation (71, 71A, 71B, 71D) is designed such that it continuously surrounds sides of the first elevation (4, 4D), with the exception of the first side of the first elevation (4, 4D) in the circumferential direction, in a top view, and wherein the third elevation (72, 72A, 72B, 72D) is designed such that it continuously surrounds sides of the first elevation (4, 4D), with the exception of the first side of the first elevation (4, 4D) in the circumferential direction, in a top view. [8] Semiconductor device according to claim 7, wherein, if the end of the semiconductor chip (1) is located above the first depression (100, 100A, 9), the semiconductor chip (1) has a width that is 100 µm or more greater than the width of an area provided with the first protrusion (4, 4D), wherein, if the end of the semiconductor chip (11) is located above the second depression (101, 101A, 91), the semiconductor chip (11) has a width that is 100 µm or more greater than a width provided with the second protrusion (71, 71A, 71B, 71D), and wherein, when the end of the semiconductor chip (12) is located above the die contact substrate (70) extending outwards from the third protrusion (72, 72A, 72B, 72D), the semiconductor chip (12) has a width that is 100 µm or more greater than the width of an area provided with the third protrusion (72, 72A, 72B, 72D). [9] Semiconductor device according to claim 7 or 8, wherein the connecting material (3) is conductive. [10] A method for manufacturing a semiconductor device, the method comprising: Preparing a die contact point; and Placing a semiconductor chip over an upper surface of the die contact point through a connecting material (3), the preparation of the die contact point exhibits: Preparing a die contact point substrate (70), Forming a first depression (9) surrounding a sub-area on an upper surface of the die contact substrate (70) to form a first elevation (4C) having a base shape, Forming a second depression (91) surrounding the first depression (9) onto the upper surface of the die contact substrate (70) to form a second elevation (71C) having a bench shape, and Forming a third depression (92) surrounding the second elevation (91) onto the upper surface of the die contact substrate (70) to form a third elevation (72C) having a bank shape, wherein the placement of the semiconductor chip above the upper surface of the die contact point by the connecting material (3) features Placing the semiconductor chip (1, 11, 12) over the first protrusion (4C), which is located on the upper surface of the die contact substrate (70), by means of the connecting material (3), and wherein, when the semiconductor chip (1, 11, 12) is placed above the upper surface of the die contact point by means of the connecting material (3), the semiconductor chip (1, 11, 12) which is arranged above the upper surface of the die contact point substrate (70) has an end which is positioned above the first well (9), above the second well (91) or above the third well (92), wherein the second elevation (71, 71A, 71B, 71D) is designed such that it continuously surrounds sides of the first elevation (4, 4D), with the exception of the first side of the first elevation (4, 4D) in the circumferential direction, in a top view, and wherein the third elevation (72, 72A, 72B, 72D) is designed such that it continuously surrounds sides of the first elevation (4, 4D), with the exception of the first side of the first elevation (4, 4D) in the circumferential direction, in a top view.

Images