Light-emitting device

Abstract

Light-emitting device comprising: a semiconductor structure (1000c) comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer (101c), a second semiconductor layer (102c) on the first semiconductor layer (101c) and an active layer (103c) between the first semiconductor layer (101c) and the second semiconductor layer (102c), wherein the first semiconductor layer (101c) comprises a first surface (1011c), the second semiconductor layer (102c) comprises a first edge (E1) and a first region, and the semiconductor structure (1000c) comprises an outer wall (1001c) connected to the first surface (1011c); a reflection structure located on the second semiconductor layer (102c) and comprising a reflection layer (40c), wherein the reflection layer (40c) comprises an outer edge (401c) and a second region; a transparent conductive layer (30c) between the semiconductor structure (1000c) and the reflective structure; and a first insulating structure (20c) on the second semiconductor layer (102c), wherein the reflective layer (40c) covers part of the first insulating structure (20c), wherein the second region of the reflective layer (40c) is not smaller than 80% of the first region of the second semiconductor layer (102c); and wherein the outer edge of the reflective layer (40c) does not extend outwards to exceed the first edge (E1).

Description

Technical field

[0001] The application relates to a structure of a light-emitting device and in particular to a light-emitting device comprising a semiconductor stack and a reflective layer on the semiconductor stack. Description of the state of the art

[0002] A light-emitting diode (LED) is a solid-state semiconductor device that offers the advantages of low energy consumption, low heat generation, long lifespan, shock resistance, small size, fast response time, and good photoelectric properties such as a stable emission wavelength. Therefore, LEDs are widely used in household appliances, displays, and optoelectronic products.

[0003] US 2015 / 0295138A1 comprehensively describes an LED as comprising: a first semiconductor layer of a first conductivity type; an active layer arranged above the first semiconductor layer; a second semiconductor layer of a second conductivity type arranged above the active layer;and a defect-blocking layer comprising a masking region for covering at least a portion of the top surface of the second conductive semiconductor layer and an opening region for partially exposing the top surface of the second semiconductor layer with the second conductivity type, wherein the active layer and the second semiconductor layer with the second conductivity type are arranged such that a portion of the first semiconductor layer with the first conductivity type is exposed, and wherein the defect-blocking layer comprises a first region and a second region surrounding the first region, and the ratio of the area of ​​the opening region to the area of ​​the masking region in the first region differs from the ratio of the area of ​​the opening region to the area of ​​the masking region in the second region.

[0004] US 9,190,562 B2 describes a light-emitting structure comprising a first conductive semiconductor layer, an active layer beneath the first conductive semiconductor layer, and a second conductive semiconductor layer beneath the active layer. Several first electrodes are provided on the first conductive semiconductor layer, and a second electrode is electrically connected to the second conductive semiconductor layer. A conductive support element is provided beneath the second electrode, and several first interconnects are each connected to the first electrodes and the conductive support element. A second interconnect is connected to the second electrode. The first electrodes are spaced apart on the top surface of the first conductive semiconductor layer. Summary of registration

[0005] One objective of the invention is to prevent current loss in the event of defects or cracks in the insulating layers.

[0006] The problem is solved by the features of independent claim 1. Advantageous embodiments are specified in the dependent claims.

[0007] A light-emitting device according to the invention comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer comprises a first surface, the second semiconductor layer comprises a first edge and a first region, and the semiconductor structure comprises an outer wall connected to the first surface; and a reflection structure located on the second semiconductor layer comprising a reflection layer, wherein the reflection layer comprises an outer edge and a second region;wherein the second region of the reflective layer is not smaller than 80% of the first region of the second semiconductor layer, wherein the outer edge of the reflective layer does not extend outwards to exceed the first edge.

[0008] Preferably, the distance between the first edge and the outer edge is between 0 µm and 10 µm.

[0009] According to the invention, the light-emitting device further comprises a transparent conductive layer between the semiconductor structure and the reflection structure.

[0010] Preferably, the transparent conductive layer comprises a first outer edge closer to the first edge than the outer edge is closer to the first edge.

[0011] According to the invention, the light-emitting device further comprises a first insulating structure on the second semiconductor layer.

[0012] According to the invention, the reflective layer covers part of the first insulating structure.

[0013] Preferably, part of the first insulating structure is located on the surface of the semiconductor structure.

[0014] Preferably, the transparent conductive layer covers the first insulating structure.

[0015] Preferably, the reflective layer is located on the surface and does not extend to cover the side wall.

[0016] Preferably, the transparent conductive layer is located on the surface and does not extend to cover the side wall.

[0017] Preferably, the first edge of the second semiconductor layer surrounds the outer edge of the reflective layer.

[0018] Preferably, a light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating structure located on the surface and side wall of the semiconductor structure; and a reflective layer comprising a first reflective section and a second reflective section separated from the first reflective section, wherein the first reflective section is located on the second semiconductor layer and the second reflective section is located on the first insulating structure.

[0019] Preferably, the second reflective section extends onto the side wall.

[0020] Preferably, the light-emitting device further comprises a transparent conductive layer, wherein the transparent conductive layer comprises a first conductive section and a second conductive section which is separated from the first conductive section, wherein the first conductive section and the second conductive section are located below the first reflective section and the second reflective section, respectively.

[0021] Preferably, the second conductive section extends to the side wall of the semiconductor structure.

[0022] Preferably, a light-emitting device comprises a semiconductor structure comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; wherein the semiconductor structure comprises an exposed portion that exposes the first semiconductor layer; and a second insulating layer covering the semiconductor structure; a contact layer on the second insulating layer; and a transparent conductive layer located on the second semiconductor layer and the exposed portion and between the first semiconductor layer and the contact layer.

[0023] Preferably, the contact layer comprises silver.

[0024] Preferably, the light-emitting device further comprises an adhesive layer between the second insulating layer and the contact layer, wherein the adhesive layer extends onto the exposed part. Preferably, the adhesive layer comprises transparent conductive material or metal, and / or the adhesive layer is bonded to the transparent conductive layer on the exposed part.

[0025] Preferably, the second insulating layer contains several protrusions and several recesses on the exposed part. Brief description of the drawings Fig. Figure 1 shows a top view of a light-emitting device 1c in accordance with an embodiment of the present application. Fig. Figure 2 shows a cross-sectional view of the light-emitting device 1c taken along line DD' of Fig. 1 in accordance with an embodiment of the present application. Fig. Figures 3A and 3C each show a partial cross-sectional view of a transparent conductive layer and a reflective layer of a light-emitting device in accordance with embodiments of the present application. Fig. 3D shows a partial cross-sectional view of a light-emitting device in accordance with an embodiment of the present application. Fig. Figure 4A shows a table listing the properties of samples A~B. Fig. Figure 4B shows a table listing the properties of samples C~F. Fig. Figure 5 shows a top view of a light-emitting device 2c in accordance with an embodiment of the present application. Fig. Figures 6A and 6I show process sequences of the light-emitting devices 1c, 2c in accordance with embodiments of the present application. Fig. Figure 7 shows a cross-sectional view of the light-emitting device 2c along line EE' of Fig. 5 in accordance with an embodiment of the present application. Fig. Figure 8 shows a schematic view of a light-emitting device 3 in accordance with an embodiment of the present application; and Fig. Figure 9 shows a structural diagram of a light-emitting device 4 in accordance with an embodiment of the present application. Detailed description of preferred embodiments

[0026] The embodiment of the application is described in detail and illustrated in the drawings. The same or similar part is designated by the same reference numeral in the drawings and in the description.

[0027] Fig. Figure 1 shows a top view of the light-emitting device 1c in accordance with an embodiment of the present application. Fig. Figure 2 is a cross-sectional view of the light-emitting device 1c taken along line DD' of Fig. 1. The Fig. Figures 6A, 6B, 6C, 6D, 6E, and 6G-6I describe process sequences of the light-emitting device 1c in accordance with the embodiment of the present application. The light-emitting device 1c disclosed in the present embodiment is a flip-chip light-emitting diode. The light-emitting device 1c comprises a substrate 11c and one or more semiconductor structures 1000c on the substrate 11c. Each of the one or more semiconductor structures 1000c comprises a semiconductor stack 10c, which includes a first semiconductor layer 101c, a second semiconductor layer 102c, and an active layer 103c between the first semiconductor layer 101c and the second semiconductor layer 102c. The active layer 103c and the second semiconductor layer 102c are stacked in an ordered manner on the first semiconductor layer 101c along a stacking direction. The semiconductor structure 1000c contains an exposed portion that exposes part of the first semiconductor layer 101c. As in Fig. 2 and Fig. As shown in Figure 6A, portions of the second semiconductor layer 102c and the active layer 103c have been removed to expose the exposed portion, which contains a first surface 1011c and one or more second surfaces 1012c of the first semiconductor layer 101c. In one embodiment, the first surface 1011c is an outer circumferential surface of the one or more semiconductor structures 1000c. The first surface 1011c surrounds the second semiconductor layer 102c and the active layer 103c, which remain on the substrate 11c. Fig. Figure 6A shows a top view of the semiconductor structures 1000c. In the present embodiment, the light-emitting device 1c comprises only one semiconductor structure 1000c, and the first surface 1011c of the first semiconductor layer 101c surrounds the second semiconductor layer 102c and the active layer 103c. Furthermore, in the present embodiment, the first surface 1011c is located substantially within a circumferential region of the semiconductor structure 1000c. In another embodiment, the light-emitting device 1c further comprises an exposed surface 11s of the substrate 11c to surround the outer circumferential surface of the semiconductor structure 1000c. The light-emitting device 1c also includes one or more openings, such as the contact holes 100c, which pass through the second semiconductor layer 102c and the active layer 103c to expose one or more second surfaces 1012c of the first semiconductor layer 101c.In one embodiment, the multiple semiconductor structures 1000c are separated by one or more openings, such as trenches, and connected to each other by the first semiconductor layer 101c. In another embodiment (not shown), the multiple semiconductor structures 1000c are physically separated from each other by the one or more openings without being connected by the first semiconductor layer 101c. In one embodiment, the light-emitting device 1c further comprises a first insulating structure 20c, a transparent conductive layer 30c, a reflective structure comprising a reflective layer 40c or a barrier layer 41c, a second insulating structure 50c, a contact layer 60c, a third insulating structure 70c, a first contact point 80c, and a second contact point 90c on the one or more semiconductor structures 1000c.

[0028] In one embodiment of the present application, the substrate 11c comprises a structured surface. The structured surface includes several projections. One shape of the projection includes a cone or a cone. The projection can improve the light extraction efficiency of the light-emitting device. In one embodiment of the present application, the substrate 11c can be a growth substrate such as a gallium arsenide wafer (GaAs wafer) for growing aluminum gallium indium phosphide (AlGaInP), a sapphire wafer (Al₂O₃ wafer), a gallium nitride wafer (GaN wafer), or a silicon carbide wafer (SiC wafer) for growing gallium nitride (GaN) or indium gallium nitride (InGaN).The semiconductor stack 10c can be formed from a group III nitride-based composite semiconductor on the substrate 11c by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), physical vapor deposition (PVD), hydride gas phase deposition (HVPE), or ion plating such as sputtering or evaporation. Additionally, a buffer structure (not shown) can be formed prior to the formation of the semiconductor stack 10b to correct a lattice mismatch between the substrate 11c and the semiconductor stack 10b. This buffer structure can be formed from a GaN-based material layer such as gallium nitride or aluminum gallium nitride, or an AlN-based material layer such as aluminum nitride. The buffer structure can be a single layer or multiple layers. The buffer structure can be formed by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or physical vapor deposition (PVD).The PVD process incorporates a sputtering process, for example, a reactive sputtering process, or a vapor deposition process such as electron beam vapor deposition or thermal vapor deposition. In one embodiment, the buffer structure comprises an AlN buffer layer and is formed by the sputtering process. The AlN buffer layer is formed on a growth substrate with a structured surface. The sputtering process can form a dense buffer layer with high uniformity, and therefore the AlN buffer layer can be conformally deposited on the structured surface of the substrate 11c.

[0029] In one embodiment of the present application, the semiconductor stack 10c includes optical properties such as light emission angle or wavelength distribution, and electrical properties such as forward voltage or reverse current. In another embodiment of the present application, the first semiconductor layer 101c and the second semiconductor layer 102c, such as a plating layer or an inclusion layer, have different conductivity types, electrical properties, polarities, or dopants for providing electrons and holes. For example, the first semiconductor layer 101c is an n-type semiconductor, and the second semiconductor layer 102c is a p-type semiconductor. The active layer 103c is formed between the first semiconductor layer 101c and the second semiconductor layer 102c.The electrons and holes combine in the active layer 103c under a driving current to convert electrical energy into light energy, and then light is emitted from the active layer 103c. The wavelength of the light emitted from the light-emitting device 1c is adjusted by changing the physical and chemical composition of one or more layers in the semiconductor stack 10c. The material of the semiconductor stack 10c contains a group III-V semiconductor material, such as Al. x In y Ga (1-x-y) N or Al x In y Ga (1-x-y)P, with 0≤x, y≤1 and (x+y)≤1. According to the active layer material 103c, if the semiconductor stack material 10c is an AlInGaP series material, red light with a wavelength in the range of 610 nm to 650 nm or yellow light with a wavelength in the range of 550 nm to 570 nm can be emitted. If the semiconductor stack material 10c is an InGaN series material, blue or deep blue light with a wavelength in the range of 400 nm to 490 nm or green light with a wavelength in the range of 490 nm to 550 nm can be emitted. If the semiconductor stack material 10c is an AlGaN series material, UV light with a wavelength in the range of 400 nm to 250 nm can be emitted. The active layer 103c can be a single heterostructure (SH), a double heterostructure (DH), a double-sided double heterostructure (DDH), or a multi-quantum well structure (MQW).The material of the active layer 103c can be an i-type, a p-type or an n-type semiconductor.

[0030] Referring to Fig. In one embodiment, the semiconductor structures 1000c comprise a first outer wall 1003c and a second outer wall 1001c, wherein one end of the first surface 1011c of the first semiconductor layer 101c connects to the first outer wall 1003c and another end of the first surface 1011c connects to the second outer wall 1001c. The second outer wall 1001c comprises side surfaces of the first semiconductor layer 101, the active layer 103c, and the second semiconductor layer 102c. In the present embodiment, the second outer wall 1001c consists of side surfaces of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c. The first outer wall 1003c is located between the first surface 1011c and the substrate 11c. In one embodiment, the first outer wall 1003c and the second outer wall 1001c are inclined to the first surface 1011c of the first semiconductor layer 101c.In one embodiment, the first outer wall 1003c is inclined to the exposed surface 11s of the substrate 11c. The angle between the first outer wall 1003c and the exposed surface 11s is an acute angle. In another embodiment, the angle between the first outer wall 1003c and the exposed surface 11s is an obtuse angle.

[0031] The semiconductor stack 10c further comprises an inner wall 1002c. Similar to the second outer wall 1001c, the inner wall 1002c consists of side faces of the first semiconductor layer 101c, the active layer 103c, and the second semiconductor layer 102c at the contact hole 100c. In one embodiment of the present application, the contact hole 100c is defined by the inner wall 1002c and the second surfaces 1012c of the first semiconductor layer 101c. One end of the inner wall 1002c is connected to the second surface 1012c of the first semiconductor layer 101c, and another end of the inner wall 1002c is connected to a surface 102s of the second semiconductor layer 102c. The surface 102s of the second semiconductor layer 102c is substantially perpendicular to the stack direction.The inner wall 1002c and the second outer wall 1001c are inclined towards the surface 102s of the second semiconductor layer 102c, and the inner wall 1002c is also inclined towards the second surface 1012c of the first semiconductor layer 101c. The angle between the inner wall 1002c and the second surface 1012c is either acute or obtuse, and the angle between the second outer wall 1001c and the first surface 1011c is either acute or obtuse. The angle between the second outer wall 1001c and the surface 102s is approximately 100 to 140 degrees, similar to the angle between the inner wall 1002c and the surface 102s. In addition, the semiconductor structures 1000c further include a first edge E1, which is a section line of the second outer wall 1001c and the surface 102s of the second semiconductor layer 102c, and a second edge E2, which is a connection of the inner wall 1002c and the surface 102s of the second semiconductor layer 102c.In a top view, the second semiconductor layer 102 contains the first edge E1. In particular, the first edge E1 is a boundary of the surface 102s of the second semiconductor layer 102, and the second edge E2 is a boundary of the contact hole 100c in the top view of the light-emitting device 1c. In one embodiment, either the first edge E1 or the second edge E2 is closed. In another embodiment, the second edge E2 is surrounded by the first edge E1.

[0032] Fig. Figure 6B shows a top view of the first insulating structure 20c. In one embodiment of the present application, the first insulating structure 20c of the light-emitting device 1c is formed on the semiconductor structure 1000c by sputtering or vapor deposition. As shown in the Fig. 2 and Fig. As shown in Figure 6B, the first insulating structure 20c comprises a surrounding insulating part 201c and several annular caps 202c in a top view. In the present embodiment, the surrounding insulating part 201c is arranged on a region of the semiconductor structure 1000c around the first edge E1, and the several annular caps 202c are arranged on a region of the semiconductor structure 1000c around the second edge E2. In one embodiment, both the surrounding insulating part 201c and the several annular caps 202c cover a section of the surface 102s of the second semiconductor layer 102c, the second outer wall 1001c, or the inner wall 1002c of the semiconductor structure 1000c. In addition, the surrounding insulating part 201c covers a section of the first surface 1011c, and the annular caps 202c cover a section of the second surface 1012c. As shown in Figure 6B, the surrounding insulating part 201c covers a section of the first surface 1011c, and the annular caps 202c cover a section of the second surface 1012c. Fig. As shown in Figure 2, the first insulating structure 20c comprises an upper section f20c on surface 102c of the second semiconductor layer 102c, a lateral section s20c located on the second outer wall 1001c and the inner wall 1002c, and a lower section t20c on the first surface 1011c and the second surface 1012c of the first semiconductor layer 101c. The lower section t20c exposes portions of the second surface 1012c and the first surface 1011c. In particular, the first insulating structure 20c is formed on the first surface 1011c, the second surface 1012c, the second outer wall 1001c, the inner wall 1002c, and surface 102s. The first insulating structure 20c further includes an opening 203c on the surface 102s of the second semiconductor layer 102c, which is defined by a side face of the upper section f20c.The first insulating structure 20c further comprises an additional opening 204c on the second surface 1012c, formed by a side face of the lower section t20c. The material of the first insulating structure 20c comprises a non-conductive material. The non-conductive material comprises organic material, inorganic material, or dielectric material. The organic material comprises Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. The inorganic material comprises silicone or glass. The dielectric material comprises aluminum oxide (Al2O3) or silicon nitride (SiN). x ), silicon dioxide (SiO₂) x ), titanium oxide (TiO2), or magnesium fluoride (MgF₂) xIn one embodiment, the first insulating structure 20c comprises one or more layers. The first insulating structure 20c protects the sidewalls of the semiconductor stack 10c to prevent the active layer 103c from being destroyed by subsequent processes. If the first insulating structure 20c comprises multiple layers, it can be a dual-layer Bragg reflector (DBR). The DBR can protect the sidewalls of the semiconductor stack 10c and can furthermore selectively reflect light of a specific wavelength emitted from the active layer 103c to the exterior of the light-emitting device 1c to enhance its brightness. In particular, the first insulating structure 20c can be formed by alternately stacking two sublayers, such as a SiO₂ layer. x -lower layer and a TiO xThe DBR structure may consist of multiple pairs of sublayers. In particular, the DBR could contain several pairs of sublayers, each with a refractive index different from that of neighboring sublayers. The DBR provides high reflectivity for a specific wavelength or within a specific wavelength range by adjusting the refractive index difference between the sublayer with a high refractive index and the sublayer with a low refractive index in each pair. The thicknesses of any two sublayers in each pair can be different. Furthermore, the thicknesses of the sublayers in the DBR, even if they are made of the same material, can be the same or different.

[0033] Fig. Figure 6C shows a top view of the transparent conductive layer 30c. As shown in the Fig. 1, Fig. 2 and Fig. As shown in Figure 6C, in the present embodiment the transparent conductive layer 30c of the light-emitting device 1c is formed on the surface 102s of the second semiconductor layer 102c. In one embodiment, the transparent conductive layer 30c can further cover part of the upper section f20c of the first insulating structure 20c. In particular, the transparent conductive layer 30c includes a first outer edge 301c and a first inner edge 302c located on the surface 102s of the second semiconductor layer 102c. The transparent conductive layer 30c does not extend beyond the first edge E1 or the second edge E2. That is, the first outer edge 301c is closer to the center of the semiconductor structure 1000c than the first edge E1 is, and the first inner edge 302c is closer to the center of the semiconductor structure 1000c than the second edge E2 is in a top view of the light-emitting device 1c, as shown in Fig. Figure 1 shows that the first outer edge 301c is surrounded by the first edge E1, and the first inner edge 302c surrounds the second edge E2 in the top view of the light-emitting device 1c. In one embodiment, the transparent conductive layer 30c can cover the lateral section s20c of the first insulating structure 20c.

[0034] The quality of the first insulating structure 20c could be affected by processing or stress. Some cracks could be produced in the first insulating structure 20c. In one embodiment, the transparent conductive layer 30c is located on the surface 102c and does not extend to cover the second outer wall 1001c and the inner wall 1002c, in order to reduce the risk of a short-circuit current between the transparent conductive layer 30c and the semiconductor stack 10c, caused by leakage current from cracking of the first insulating structure 20c. Therefore, the reliability of the light-emitting device 1c can be consistent.Since the transparent conductive layer 30c is formed essentially on the entire surface 102s of the second semiconductor layer 102c and contacts the second semiconductor layer 102c, the current can be distributed evenly through the transparent conductive layer 30c over the entire second semiconductor layer 102s.

[0035] The material of the transparent conductive layer 30c contains a material that is transparent to the light emitted from the active layer 103c, such as a metal oxide. The metal oxide includes indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), tungsten-doped indium oxide (IWO), or zinc oxide (ZnO). The transparent conductive layer 30c can be configured to form a low-resistance contact, such as an ohmic contact, with the second semiconductor layer 102c. The transparent conductive layer 30c may contain a single layer or multiple layers. For example, if the transparent conductive layer 30c contains several sublayers, the transparent conductive layer 30c can be a Bragg mirror (DBR).In one embodiment, the DBR of the transparent conductive layer 30c is electrically conductive. In another embodiment, a top view of the transparent conductive layer 30c essentially corresponds to a shape of the second semiconductor layer 102c. Referring to the... Fig. 6A and Fig. 6C corresponds to the shape of the transparent conductive layer 30c, which is in Fig. 6C is shown, essentially in the form of the second semiconductor layer 102c, which is in Fig. 6A is shown.

[0036] In one embodiment of the present application, the reflective structure of the light-emitting device 1c is formed on the transparent conductive layer 30c. The reflective structure comprises the reflective layer 40c, the barrier layer 41c, or a combination thereof. In one embodiment, in a top view, a shape of the reflective layer 40c essentially corresponds to a shape of the second semiconductor layer 102c. Fig. Figure 6D shows a top view of the reflective layer 40c. As shown in the Fig. 1, Fig. 2 and Fig. As shown in Figure 6D, the reflective layer 40c includes a second outer edge 401c and a second inner edge 402c. In this embodiment, the reflective layer 40c does not extend outwards to exceed the first outer edge 301c and / or the first inner edge 302c of the transparent conductive layer 30c, nor does it extend outwards to exceed the first edge E1 and / or the second edge E2 of the semiconductor structure 1000c. The first outer edge 301c of the transparent conductive layer 30c is located between the second outer edge 401c of the reflective layer 40c and the first edge E1, and / or the first inner edge 302c is located between the second inner edge 402c and the second edge E2.In other words, the first outer edge 301c is closer to the first edge E1 than the second outer edge 401c is to the first edge E1, and the first inner edge 302c is closer to the second edge E2 than the second inner edge 402c is to the second edge E2. In one embodiment, the reflective layer 40c covers part of the upper section f20c of the first insulating structure 20c, such as the upper section f20c on surface 102s, and the reflective layer 40c does not cover the lateral section s20c and the lower section t20c. Furthermore, a portion of the transparent conductive layer 30c is located near the first edge E1 and / or the second edge E2 between the reflective layer 40c and the upper section f20c. In particular, the second outer margin 401c and / or the second inner margin 402c do not extend to exceed the first outer margin 301c and / or the first inner margin 302c, respectively.In one embodiment, the transparent conductive layer 30c can avoid the detachment problem between the reflective layer 40c and the first insulating structure 20c. In particular, the reflective layer 40c connects to the first insulating structure 20c via the transparent conductive layer 30c, and the transparent conductive layer 30c arranged between them can increase the adhesion between the reflective layer 40c and the first insulating structure 20c.

[0037] In one embodiment, the second outer edge 401c is aligned with the first outer edge 301c of the transparent conductive layer 30c, and / or the second inner edge 402c is aligned with the first inner edge 302c of the transparent conductive layer 30c. In another embodiment, the second outer edge 401c is offset from the first edge E1, and / or the second inner edge 402c is offset from the second edge E2.

[0038] In one embodiment, neither the reflective layer 40c nor the transparent conductive layer 30c extends to cover the side walls, such as the second outer wall 1001c and the inner wall 1002c of the semiconductor structure 1000c, in order to reduce the risk of an electrical short circuit in the light-emitting device 1c caused by a leakage current through the reflective layer 40c, the transparent conductive layer 30c and the cracks in the first insulating structure 20c to the semiconductor structure 1000c. In particular, since the second outer wall 1001c and the inner wall 1002c consist of the side faces of the first semiconductor layer 101c, the active layer 103c and the second semiconductor layer 102c, if the reflective layer 40c extends to the second outer wall 1001c and the inner wall 1002c, can cause a leakage current if the first insulating structure 20c has defects or cracks.In particular, some of the metallic material of the reflective layer 40c (such as silver, aluminum) can diffuse through defects or cracks in the first insulating structure 20c into the first semiconductor layer 101c and the second semiconductor layer 102c. Therefore, due to the electrical connection between the first semiconductor layer 101c and the second semiconductor layer 102c via diffusion from the reflective layer 40c, a short-circuit current is caused. Consequently, the reliability of the light-emitting device 1c would be reduced if the reflective layer 40c extends beyond the first edge E1 or the second edge E2 and covers the lateral section s20c. However, the application is not limited by the embodiments. Other manufacturing processes, materials of the first insulating structure 20c, or structures of the first insulating structure 20c, such as...Multiple insulating layers can be used to improve the quality and mechanical strength of the first insulating structure 20c to prevent the current short-circuit problem.

[0039] In one embodiment, in the top view of the light-emitting device 1c, the second semiconductor layer 102c contains a first region, and the reflective layer 40c contains a second region. In this embodiment, the first region is defined in the top view of the light-emitting device 1c by the first edge E1 and the second edge E2 of the second semiconductor layer 102c, and the second region is defined by the second outer edge 401c and the second inner edge 402c of the reflective layer 40c. The first edge E1 of the second semiconductor layer 102c surrounds the second outer edge 401c of the reflective layer 40c, and the second inner edge 402c surrounds the second edge E2 of the second semiconductor layer 102c. To improve the brightness of the light-emitting device 1c, the brightness can be improved the more light emitted from the active layer 103c can be reflected by the reflective layer 40c.Therefore, the second region of the reflective layer 40c should be designed to be as large as possible. A compromise between the brightness and the reliability of the light-emitting device 1c must be considered. In one embodiment, the second region of the reflective layer 40c is not smaller than 80% of the first region of the second semiconductor layer 102c. In another embodiment, the second region is 82% to 96% of the first region. In yet another embodiment, the second region is 85% to 95% of the first region.

[0040] In another embodiment, a distance D is present between the second outer edge 401c of the reflective layer 40c and the first edge E1 of the semiconductor structure 1000c. A distance D' is present between the second inner edge 402c and the second edge E2. In one embodiment, the distance D or the distance D' is greater than zero. In one embodiment, the distance D or the distance D' is not greater than 10 µm. In one embodiment, the distance D or the distance D' is not greater than 8 µm. In another embodiment, the distances D and D' are greater than 0 µm and less than 10 µm. In one embodiment, the distances D and D' are in the range of 2 µm to 8 µm. Furthermore, in another embodiment, the distance D and the distance D' could be the same or different.

[0041] In one embodiment, the barrier layer 41c is formed on and covers the reflective layer 40c. An outer edge (not shown) of the barrier layer 41c surrounds the second outer edge 401c of the reflective layer 40c, and / or an inner edge (not shown) of the barrier layer 41c surrounds the second inner edge 402c of the reflective layer 40c. In another embodiment, the reflective layer 40c is formed on and covers the barrier layer 41c. The outer edge of the barrier layer 41c can be surrounded by the second outer edge 401c of the reflective layer 40c, and / or the inner edge of the barrier layer 41c can be surrounded by the second inner edge 402c of the reflective layer 40c. In another embodiment, the outer edge or the inner edge of the barrier layer 41c overlaps or is aligned with the second outer edge 401c and the second inner edge 402c of the reflective layer 40c.

[0042] The Fig. Figures 3A and 3C each represent a partial cross-sectional view of the transparent conductive layer 30c and the reflective layer 40c near the first edge E1 or the second edge E2 of the light-emitting device 1c in accordance with embodiments of the present application. The reflective layer 40c is formed on the transparent conductive layer 30c. In one embodiment, as shown in Fig. As shown in Figure 3A, the reflective layer 40c and the transparent conductive layer 30c are formed on the first insulating structure 20c and do not extend to the side walls or into the contact hole 100c of the semiconductor structure 1000c. In an embodiment as shown in the Fig. As shown in 3B-3C, the reflective layer 40c and the transparent conductive layer 30c, which are formed on the first insulating structure 20c, extend to the side walls or into the contact hole 100c of the semiconductor structure 1000c.

[0043] In one embodiment as in Fig. As shown in Figure 3A, the reflective layer 40c is a discontinuous structure and comprises a first reflective section 403c and a second reflective section 404c, which is separated from the first reflective section 403c. A gap G is present between the first reflective section 403c and the second reflective section 404c. In an embodiment as shown in Fig. As shown in Figure 3A, the conductive layer 30c is a discontinuous structure and contains a first conductive section 31c and a second conductive section 32c, which is separated from the first conductive section 31c. The second conductive section 32c and the second reflective section 404c are arranged entirely on the first insulating structure 20c and the second semiconductor layer 102c. In one embodiment, the first conductive section 31c and the second conductive section 32c are located beneath the first reflective section 403c and the second reflective section 404c, respectively.Since the first reflective section 403c is separated from the second reflective section 404c, and the first conductive section 31c is separated from the second conductive section 32c, and since the second conductive section 32c and the second reflective section 404c are completely arranged on the first insulating structure 20c, no current can flow between the first reflective section 403c and the second reflective section 404c. That is, the second reflective section 404c is electrically isolated from the first reflective section 403c.

[0044] In the Fig. The embodiment shown in 3B shows the differences between the embodiment in Fig. 3B and the embodiment in Fig. 4A, that the transparent conductive layer 30c contains a first conductive section 31c and a third conductive section 33c separate from the first conductive section 31c, and the reflective layer 40c contains a first reflective section 403c and a third reflective section 405c separate from the first reflective section 403c in Fig. 3B contains. A gap G is present between the first reflective section 403c and the third reflective section 405c. Therefore, the third reflective section 405c and the first reflective section 403c are electrically isolated from each other. In particular, the third conductive section 33c is formed on the first insulating structure 20c and the second semiconductor layer 102c and extends to the second outer wall 1001c to cover the lateral section s20c and the lower section t20c of the first insulating structure 20c. In one embodiment, the third conductive section 33c is formed on the first insulating structure 20c and the second semiconductor layer 102c and extends to the inner wall 1002c to cover the lateral section s20c of the first insulating structure 20c. The first reflective section 403c and the third reflective section 405c are formed on the first conductive section 31c and 20c, respectively.formed the third conductive section 33c.

[0045] In one embodiment as in Fig. As shown in Figure 3C, the reflective layer 40c contains a first reflective section 403c', a second reflective section 404c', and a third reflective section 405c', which are separated from each other. In addition, the transparent conductive layer 30c contains a first conductive section 31c', a second conductive section 32c', and a third conductive section 33c', which are separated from each other. Therefore, the third reflective section 405c', the second reflective section 404c', and the first reflective section 403c' are electrically isolated from each other. In individual light-emitting devices in accordance with the [reference to be added] Fig. In embodiments 3A-3C, each of the reflective layers 40c is a discontinuous structure and electrically isolated, thus avoiding leakage current, while the reflective layer 40c extends to the sidewalls of the semiconductor structure 1000c to enlarge the second area of ​​the reflective layer 40c. Both the reflective area for brightness and the reliability of the individual light-emitting devices have been taken into account. In one embodiment, the light-emitting devices shown in the Fig. As shown in Figures 3A-3C, the second region of the reflective layer 40c is not smaller than 80% of the first region of the second semiconductor layer 102c, and the distance D between the first edge E1 and the second outer edge 401c is in the range of 0 µm to 10 µm. In one embodiment, the first outer edge 301c and the second outer edge 401c are closer to the center of the semiconductor structure 1000c than the first outer edge E1 in the figure shown. Fig. 3A shows a light-emitting device. The first edge E1 is closer to the center of the semiconductor structure 1000c than the first outer edge 301c and the second outer edge 401c in the Fig. 3B-3C. Since the reflective layer 40c forms the sidewalls of the semiconductor structure 1000c in the Fig. 3B-3C covered, the second areas of the reflective layer 40c are those in the Fig. The light-emitting device shown in 3B-3C is larger than those shown in Fig. 3A are shown. In addition, the second area of ​​the reflective layer 40c, which is shown in Fig. 3C is shown to be larger than the one shown in Fig. 3A or Fig. 3B is shown, and thus the brightness of the light-emitting device shown in Fig. 3C is shown, be higher than that of the light-emitting device shown in the Fig. 3A or Fig. 3B is shown.

[0046] In one embodiment of the present application, the reflective layer 40c comprises several sublayers, such as a Bragg reflector (DBR). In this embodiment, the material of the DBR can be electrically insulated or electrically conductive.

[0047] In one embodiment of the present application, the reflective layer 40c comprises a single-layer or multi-layer structure, and the material of the reflective layer 40c comprises a metallic material with a high reflectivity for the light emitted by the active layer 103c, such as silver (Ag), gold (Au), aluminum (Al), titanium (Ti), chromium (Cr), copper (Cu), nickel (Ni), platinum (Pt), or an alloy thereof. The high reflectivity referred to here means having a reflectivity of 80% or more for a wavelength of light emitted from the active layer 103c.

[0048] In one embodiment of the present application, the reflection structure further comprises a DBR structure below the reflection layer 40c. In one embodiment, the DBR structure is formed between the semiconductor structure 1000c and the reflection layer 40c. It is optional to insert a bonding layer between the DBR structure and the reflection layer 40c to increase the adhesion between them. For example, in the DBR structure, a first layer is bonded to the reflection layer 40c, wherein the first layer contains silicon dioxide (SiO2) and the reflection layer 40c contains silver (Ag). The intervening bonding layer contains ITO, IZO, or other similar material, which exhibits a higher adhesion to the reflection layer 40c than the first layer of the DBR structure.

[0049] In one embodiment of the present application, the reflective structure further comprises a barrier layer 41c covering the reflective layer 40c to prevent oxidation of the surface of the reflective layer 40c, which would impair its reflectivity. The barrier layer 41c material comprises metallic material such as titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), zinc (Zn), chromium (Cr), or an alloy of the aforementioned materials. The barrier layer 41c may have a single-layer or multi-layer structure. If the barrier layer 41c is the multilayer structure, the barrier layer 41c is stacked alternately by a first barrier layer (not shown) and a second barrier layer (not shown), for example Cr / Pt, Cr / Ti, Cr / TiW, Cr / W, Cr / Zn, Ti / Pt, Ti / W, Ti / TiW, Ti / W, Ti / Zn, Pt / TiW, Pt / W, Pt / Zn, TiW / W, TiW / Zn or W / Zn.In one embodiment, the barrier layer material 41c contains a metallic material that is not gold (Au) or copper (Cu).

[0050] In one embodiment of the present application, the second insulating structure 50c of the light-emitting device 1c is formed on the semiconductor structure 1000c by sputtering or vapor deposition. The second insulating structure 50c is formed on the semiconductor structure 1000c, the first insulating structure 20c, the transparent conductive layer 30c, and the reflective layer 40c. Fig. Figure 6E shows a top view of the second insulating structure 50c. As shown in the Fig. 1, Fig. 2, and Fig. As shown in Figure 6E, the second insulating structure 50c includes one or more first insulating openings 501c to expose the second surface 1012c of the first semiconductor layer 101c, and one or more second insulating openings 502c to expose the reflective layer 40c or the barrier layer 41c. In one embodiment, the first insulating openings 501c and the second insulating openings 502c have different widths or numbers. In the top view of the light-emitting device 1c, the shapes of the first insulating openings 501c and the second insulating openings 502c are round, elliptical, rectangular, polygonal, or any other shape. In one embodiment, the positions of the first insulating openings 501c are configured to correspond to the positions of the contact holes 100c. In another embodiment, one of the second insulating openings 502c is located on one side of the light-emitting device 1c opposite the first insulating openings 501c.

[0051] The second insulating structure 50c is formed from a non-conductive material and contains organic, inorganic, or dielectric material. The organic material includes Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. The inorganic material contains silicone or glass. The dielectric material contains aluminum oxide (Al₂O₃) or silicon nitride (SiN₂). x ), silicon dioxide (SiO₂) x ), titanium dioxide (TiO₂) x ), or magnesium fluoride (MgF₂) x In one embodiment, the second insulating structure 50c comprises one or more layers. In one embodiment, the second insulating structure 50c can be a double-barreled Bragg mirror (DBR). In particular, the second insulating structure 50c can be formed by alternating stacking of SiO₂ x-lower layer and a TiO x -Underlayer may be formed. The material of the second insulating structure 50c and that of the first insulating structure 20c may be the same or may be different.

[0052] Fig. 6G shows a top view of contact layer 60c. As shown in the Fig. 1, Fig. 2 and Fig. As shown in Figure 6G, in one embodiment the contact layer 60c is formed on the second insulating structure 50c and the reflective layer 40c or on the barrier layer 41c. The contact layer 60c comprises a first contact part 601c, a second contact part 602c, and a pin region 600c, which are electrically separated from each other. Here, the first contact part 601c is electrically connected to the first semiconductor layer 101c, the second contact part 602c is electrically connected to the second semiconductor layer 102c, and the pin region 600c is electrically isolated from the first contact part 601c and the second contact part 602c. The first contact part 601c is formed on the first surface 1011c of the first semiconductor structure 101c to surround a circumferential area of ​​the semiconductor structure 1000c and to contact the first semiconductor layer 101c to form an electrical connection.In one embodiment, the first contact part 601c has a circumferential length greater than the circumferential length of the active layer 103c. In another embodiment, the first contact part 601c is also formed on the second surfaces 1012c of the first semiconductor layer 101c to cover the one or more contact holes 100c via the multiple first insulating openings 501c of the second insulating structure 50c and to contact the first semiconductor layer 101c to form an electrical connection. The pin region 600c is applied to the second semiconductor layer 102c and is electrically isolated from the first semiconductor layer 101c and the second semiconductor layer 102c by the second insulating structure 50c. In the present embodiment, the pin region 600c is applied substantially in the center of the light-emitting device 1c in the top view.Additionally, the second contact part 602c electrically connects the surface 102s of the second semiconductor layer 102c via the reflective layer 40c and the transparent conductive layer 30c to form an electrical connection between the second contact part 602c and the second semiconductor layer 102c. In the present embodiment, the pin area 600c is located between the first contact part 601c and the second contact part 602c in the top view of the light-emitting device 1c. The pin area 600c and the second contact part 602c are surrounded by the first contact part 601c, as shown in the figure. Fig. Figure 6G shows the pin area 600c. In one embodiment, the pin area 600c is electrically connected to either the first contact part 601c or the second contact part 602c. The pin area 600c has a geometric shape, such as a rectangle or a circle, as shown in a top view. The contact layer 60c can be a single-layer or multi-layer structure. The contact layer 60c material contains metal, such as aluminum (Al), silver (Ag), chromium (Cr), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), or zinc (Zn).

[0053] After the contact layer 60c has been formed, a third insulating structure 70c is placed on the contact layer 60c and covers the contact layer 60c. Fig. Figure 6H shows a top view of the third insulating structure 70c. As shown in the Fig. 1, Fig. 2 and Fig. As shown in Figure 6H, the third insulating structure 70c contains a first opening 701c and a second opening 702c. The first opening 701c exposes the first contact part 601c of the contact layer 60c, and the second opening 702c exposes the second contact part 602c of the contact layer 60c. The third insulating structure 70c contains one or more layers. If the third insulating structure 70c contains multiple layers, it can form a Bragg mirror (DBR). The material of the third insulating structure 70c is non-conductive and may include organic, inorganic, or dielectric materials. The organic material contains Su8, benzocyclobutene (BCB), perfluorocyclobutane (PFCB), epoxy resin, acrylic resin, cyclic olefin polymers (COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide, or fluorocarbon polymer. The inorganic material contains silicone or glass.The dielectric material contains aluminum oxide (Al2O3) and silicon nitride (SiN). x ), silicon dioxide (SiO₂) x ), titanium oxide (TiO₂) x ), or magnesium fluoride (MgF₂) x The first insulating structure 20c, the second insulating structure 50c, and the third insulating structure 70c can be made of the same material or of different materials selected from those described above. The first insulating structure 20c, the second insulating structure 50c, and the third insulating structure 70c can be formed by printing, vapor deposition, or sputtering.

[0054] After the third insulating structure 70c has been formed, the first contact point 80c and the second contact point 90c are formed on the semiconductor stack 10c. Fig. Figure 6I shows a top view of the first contact point 80c and the second contact point 90c. As in the Fig. 1, Fig. 2 and Fig. As shown in Figure 6I, the positions and / or shapes of the first contact point 80c and the second contact point 90b also correspond to those of the first opening 701c and the second opening 702c of the third insulating structure 70c. The first contact point 80c is electrically connected to the first semiconductor layer 101c via the first opening 701c of the third insulating structure 70c and the first contact part 601c of the first contact layer 60c, and the second contact point 90c is electrically connected to the second semiconductor layer 102c via the second opening 702c of the third insulating structure 70c, the second contact part 602c of the contact layer 60c, the reflective layer 40c and the transparent conductive layer 40.In the top view of the light-emitting device 1, the first contact point 80c has the same shape as the second contact point 90c; for example, the first contact point 80c and the second contact point 90c have a rectangular shape, but the present disclosure is not limited to this. In another embodiment, the shape or size of the first contact point 80c may differ from that of the second contact point 90c for the purpose of distinguishing the first contact point 80c from the second contact point 90c or for producing good current distribution in the light-emitting device 1c. For example, the shape of the first contact point 80c may be rectangular, and the shape of the second contact point 90c may be comb-shaped, and the area of ​​the first contact point 80c may be larger than that of the second contact point 90c.In this embodiment, the first contact point 80c and the second contact point 90c each comprise a structure having one or more layers. The materials of the first contact point 80c and the second contact point 90c include metallic materials such as chromium (Cr), titanium (Ti), tungsten (W), aluminum (Al), indium (In), tin (Sn), nickel (Ni), platinum (Pt), or an alloy of the aforementioned materials. If the first contact point 80c and the second contact point 90b comprise a multilayer structure, the first contact point 80c and the second contact point 90c each comprise an upper contact point and a lower contact point (not shown). The upper contact point and the lower contact point have different functions. The function of the upper contact point is used for soldering or wiring.The light-emitting device 1c can be inverted and mounted on a housing substrate (not shown) by using solder bonding or eutectic AuSn bonding across the upper contact point. The metal material of the upper contact point comprises highly deformable materials such as nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), copper (Cu), gold (Au), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), or osmium (Os). The upper contact point can be a single layer or a multilayer film of the aforementioned materials. In one embodiment of the present application, the material of the upper contact point preferably comprises nickel (Ni) and / or gold (Au) or an alloy thereof.The function of the lower contact point is to form a stable interface with the contact layer 60c, the reflective layer 40c, or the barrier layer 41c. This, for example, improves the interfacial bond strength between the lower contact point and contact layer 60c, or strengthens the interfacial bond strength between the lower contact point of the second contact point 90c and the reflective layer 40c or the barrier layer 41c. Another function of the lower contact point is to prevent solder metal, such as tin (Sn) or AuSn, from diffusing into the reflective structure and impairing its reflectivity. Therefore, the lower contact point can contain metallic materials different from those of the upper contact point. That is, the material of the lower contact point contains materials other than gold (Au) and copper (Cu), such as...Nickel (Ni), cobalt (Co), iron (Fe), titanium (Ti), tungsten (W), zirconium (Zr), molybdenum (Mo), tantalum (Ta), aluminum (Al), silver (Ag), platinum (Pt), palladium (Pd), rhodium (Rh), iridium (Ir), ruthenium (Ru), osmium (Os). The lower contact point can be a single layer, an alloy, or a multilayer film of the aforementioned materials. In one embodiment of the present application, the lower contact point preferably comprises a multilayer film of titanium (Ti) and aluminum (Al) or a multilayer film of chromium (Cr) and aluminum (Al).

[0055] The Fig. Figures 6A, 6B', 6C-6D, 6E', and 6G-6I represent a process sequence of the light-emitting device in accordance with a further embodiment of the present application. The main differences between the light-emitting device in the present embodiment and the light-emitting device 1c are the structures of the first insulating structure 20c and the second insulating structure 50c. Referring to Fig. 6B' The first insulating structure 20c comprises a surrounding insulating part 201c and several annular caps 202c. Here, the surrounding insulating part 201c includes several projections 2011c and several recesses 2012c. In this embodiment, the multiple projections 2011c and the multiple recesses 2012c of the surrounding insulating part 201c are arranged alternately. Fig. 3D shows a partial cross-sectional view of a light-emitting device protruding from the projections 2011c in accordance with the present embodiment. As shown in the Fig. 3D and Fig. As shown in Figure 6B', the surrounding insulating part 201c is arranged along the first surface 1011c and surrounds the semiconductor structure 1000c. In this embodiment, the multiple projections 2011c and the multiple recesses 2012c of the surrounding insulating part 201c are arranged alternately on the first surface 1011c. In particular, the multiple projections 2011c extend from the surface 102s of the second semiconductor layer 102c and cover portions of the first surface 1011c of the semiconductor structure 1000c, and the multiple recesses 2012c expose other portions of the first surface 1011c. In other words, the first surface 1011c contains a first exposed area, which is exposed by the surrounding insulating part 201c, and the first exposed area is discontinuous.

[0056] Referring to Fig. 6E' The second insulating structure 50c in the present embodiment includes a circumferential surface 503c which contains several projections 5031c and several recesses 5032c. As in Fig. As shown in 3D, the second insulating structure 50c covers the first insulating structure 20c, such that the second outer wall 1001c and a section of the first surface 1011c covered by the first insulating structure 20c are also covered by the second insulating structure 50c. Additionally, the multiple projections 5031c and the multiple recesses 5032c of the second insulating structure 50c are arranged alternately along the first surface 1011c of the semiconductor structure 1000c. Furthermore, in this embodiment, a circumferential surface shape 503c of the second insulating structure 50c corresponds to a circumferential surface shape of the first insulating structure 20c for discontinuously exposing the first surface 1011c of the semiconductor structure 1000c. In particular, the shapes and positions of the multiple projections 5031c and the multiple recesses 5032c correspond to the shapes and positions of the multiple projections 2011c and the multiple recesses 2012c of the surrounding insulating part 201c.In this way, the first surface 1011c, exposed by the multiple recesses 2012c of the first insulating structure 20c, can also be exposed by the multiple recesses 50322c of the second insulating structure 50c. The first surface 1011c, covered by the multiple projections 2011c, can be covered by the multiple projections 5031c. In other words, the first surface 1011c contains a second exposed area, exposed by the multiple recesses 5032c, and the second exposed area is discontinuous. The second exposed area of ​​the first surface 1011c is essentially the same as the first exposed area, exposed by the first insulating structure 20c. Referring to... Fig. In embodiment 6G, the first contact part 601c is electrically connected to the first semiconductor layer 101c by contacting the first surface 1011c via the multiple recesses 5032c of the second insulating structure 50c and the multiple recesses 2012c of the first insulating structure 20c. In other words, the first contact part 601c includes a discontinuous contact area (not shown) that contacts the first surface 1011c. In this embodiment, the discontinuous contact area between the first contact part 601c and the first surface 1011c of the semiconductor structure 1000c promotes current distribution in the light-emitting device and prevents light-emitting device breakdown. Fig. 4A referenced. Fig. Figure 4A shows a table listing the properties of samples A and B. In particular, the table shows the properties of a conventional light-emitting device (sample A) and the light-emitting device 1c in an embodiment of the present application (sample B). Sample A and sample B have the same square shape and chip size, 35 × 25 mil. 2The differences are that the area of ​​the reflective layer of the conventional light-emitting device is smaller than the reflective layer 40c of the light-emitting device 1c. Furthermore, in the conventional light-emitting device, the distance between the first edge of the second semiconductor layer and the second outer edge of the reflective layer is 15 µm. The distance D of the light-emitting device 1c in the embodiment is 6 µm. The distance D of the light-emitting device 1c is smaller than that of the conventional light-emitting device. In other words, the area of ​​the reflective layer 40c of the light-emitting device 1c is larger than that of the reflective layer of the conventional light-emitting device.The ratio of the area of ​​the reflective layer 40c to the area of ​​the second semiconductor layer 102c of the light-emitting device 1c is greater than the ratio of the area of ​​the reflective layer to the area of ​​the second semiconductor layer of the conventional light-emitting device. The table indicates that the power (I. V2 ) of the light-emitting device 1c by 1.8% (ΔI V2 ) is improved compared to that of the conventional light-emitting device, while the forward voltage (V f2 ) and the wavelength (W d2 ) are kept at the same level. Therefore, the reflective layer 40c with a larger area can improve the performance of the light-emitting device 1c.

[0057] Now, the focus will shift to... Fig. 4B is referenced. Fig. Figure 4A shows a table listing the properties of samples C and F. In particular, the table shows the performance of samples C and F. Sample C is a conventional light-emitting device. Sample D is a light-emitting device with contact layer 60c, which contains the discontinuous contact area, as shown in the Fig. 6B', Fig. 6E' and Fig. 3D is shown, however without a larger second area of ​​the reflective layer 40c, as in the Fig. Figures 1 and 2 are shown. Sample E is the light-emitting device 1c with a larger second area of ​​the reflective layer 40c, as shown in the figures. Fig. 1~2 is shown. Sample F is the light-emitting device containing the contact layer 60c with the discontinuous contact area shown in the Fig. 6B', Fig. 6E' and Fig. 3D shown, and the reflective layer 40c with the larger second area, as shown in the Fig. Figures 1 and 2 show that the engineered features of Probe D and Probe E have been combined. Both Probe D and Probe E exhibit more advanced brightness performance compared to Probe C. Furthermore, the light-emitting device, Probe F, exhibits the highest power (I V2 ) on.

[0058] Fig. Figure 5 shows a top view of a light-emitting device 2c in accordance with an embodiment of the present application. Fig. Figure 7 is a cross-sectional view of the light-emitting device 2c taken along line EE' of Fig. 5. The Fig. Figures 6A-6B, 6C', 6D, and 6E-6I each show the layout of the semiconductor structure 1000c with the exposed first surface 1011c and the second surface 1012c of the first semiconductor layer 101c, the first insulating structure 20c, the transparent conductive layer 30c, the reflective layer 40c, the second insulating structure 50c, an adhesion layer 51c, the contact layer 60c, the third insulating structure 70c, and the contact points 80c and 90c of the light-emitting device 2c. The light-emitting device 2c in this embodiment is similar to that shown in the Fig. The light-emitting device 1c shown in Figures 1 and 2 differs in that the light-emitting device 2c further includes the adhesion layer 51c between the second insulating structure 50c and the contact layer 60c. In addition, the transparent conductive layer 30c of the light-emitting device 2c further includes a first transparent conductive section f30c, a second transparent conductive section s30c, and a third transparent conductive section t30c, which are separated from each other, unlike the transparent conductive layer 30c of the light-emitting device 1c. In one embodiment, the material of the second insulating structure 50c contains silicon dioxide (SiO2), and the material of the contact layer 60c contains silver (Ag). The adhesion layer 51c between the second insulating structure 50c and the contact layer 60c can improve the adhesion between the second insulating structure 50c and the contact layer 60c.The adhesive layer 51c prevents the contact layer 60c from detaching from the second insulating structure 50c. The insertion of the adhesive layer 51c between them improves the reliability of the light-emitting device 2c. The adhesive layer 51c contains a material that exhibits higher adhesion to the second insulating structure 50c than that between the contact layer 60c and the second insulating structure 50c. The material of the adhesive layer 51c can be a transparent conductive material or a metal. The transparent conductive material contains metal oxide. The metal oxide contains indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), antimony tin oxide (ATO), aluminum zinc oxide (AZO), zinc tin oxide (ZTO), gallium-doped zinc oxide (GZO), tungsten-doped indium oxide (IWO), or zinc oxide (ZnO). The metal contains platinum. However, the material of the adhesion layer 51c is not limited to the aforementioned material.In one embodiment, a shape and area of ​​the adhesion layer 51c is located in . Fig. 6F is shown, similar to that of the second insulating structure 50c, which is shown in Fig. Figure 6E shows that the adhesion layer 51c includes one or more first adhesion openings 511c corresponding to the first insulating openings 501c, and one or more second adhesion openings 512c corresponding to the second insulating openings 502c. In one embodiment, a circumferential surface 513c of the adhesion layer 51c surrounds a circumferential surface 503c of the second insulating structure 50c for electrical connection to the first surface 1011c of the first semiconductor layer 101c. In this embodiment, the adhesion layer 51c extends over the exposed portion of the semiconductor structure 1000c. In particular, the adhesion layer 51c extends over the first surface 1011c and / or the second surface 1012c, as shown in Figure 6E. Fig. 7 is shown.

[0059] Referring to Fig. 6C' and Fig. In the embodiment shown in Figure 7, the first transparent conductive section f30c is located on surface 102x of the second semiconductor layer 102c, the second transparent conductive section s30c is located on the first surface 1011c of the exposed part, and the third transparent conductive section t30c is located on the second surface 1012c of the exposed part in the contact hole 100c. The transparent conductive layer 30c connects to the adhesion layer 51c on the exposed part. The third transparent conductive section t30c is surrounded by the first transparent conductive section f30c, and the first transparent conductive section f30c is surrounded by the second transparent conductive section s30c in a top view of the transparent conductive layer 30c, as shown in Figure 7. Fig. 6C' is shown. The area of ​​the first transparent conductive section f30c is larger than that of the second transparent conductive section s30c and the third transparent conductive section t30c. In particular, the first transparent conductive section f30c contains a first circumferential surface f30c1, the second transparent conductive section s30c contains a second circumferential surface s30c1 that surrounds the first circumferential surface f30c1, and the third transparent conductive section t30c contains a third circumferential surface t30c1 that is surrounded in plan view by the first circumferential surface f30c1.

[0060] As in the Fig. 6D and Fig. As shown in Figure 7, the reflective layer 40c is formed on the first transparent conductive section f30c. The reflective layer 40c includes a second outer edge 401c and a second inner edge 402c, which is surrounded by the second outer edge 401c. The reflective layer 40c does not extend outwards to exceed the first outer edge 301c and / or the first inner edge 302c of the transparent conductive layer 30c, nor does it extend outwards to exceed the first edge E1 and / or the second edge E2 of the semiconductor structure 1000c. In the present embodiment, the second outer edge 401c is substantially aligned with the first outer edge 301c, and the second inner edge 402c is substantially aligned with the first inner edge 302c. As shown in the Fig. 6E and Fig. As shown in Figure 7, the second insulating structure 50c is formed on the reflective layer 40c and covers the first insulating structure 20c. In one embodiment, the second insulating structure 50c, which contains the multiple projections 5031c and the multiple recesses 5032c, is located as shown in Figure 7. Fig. 6E' is shown on the exposed part of the semiconductor structure 1000c and covers the first surface 1011c or the transparent conductive layer 30c, as shown in the Fig. 6C and Fig. Figure 6C' shows that the multiple projections 5031c and the multiple recesses 5032c are arranged alternately along the first surface 1011c and discontinuously cover the first surface 1011c. Specifically, the multiple projections 5031c cover sections of the first surface 1011c that are covered by the multiple projections 2011c, and the multiple recesses 5032c expose sections of the first surface 1011c that are exposed by the multiple recesses 2012c. In one embodiment, the multiple projections 5031c cover sections of the second transparent conductive section s30c, and the multiple recesses 5032c expose sections of the second transparent conductive section s30c.

[0061] Referring to Fig. Similar to the light-emitting device 1c, the light-emitting device 2c contains the contact layer 60c, which has the first contact part 601c, the second contact part 602c and the pin area 600c. The first contact part 601c is electrically connected to the first semiconductor layer 101c via the first adhesion opening 511c, the first insulating openings 501c and the second transparent conductive section s30c, which is arranged on the first surface 1011c, and the third transparent conductive section t30c, which is arranged on the second surface 1012c in the contact holes 100c. On the other hand, the second contact part 602c is electrically connected to the second semiconductor layer 102c via the second adhesion openings 512c and the second insulating openings 502c, the reflective layer 40c and the first transparent conductive section f30c, which is arranged on the surface 102s of the second semiconductor layer 102c.In one embodiment, the material of the first contact part 601c and the second contact part 602c is the same, and both are multilayer structures.

[0062] In one embodiment, the first contact part 601c comprises a first section and a second section that covers the first section. The material of the first section comprises Ag / NiTi / TiW / Pt, and the material of the second section comprises Ti / Al / Ti / Al / Cr / Pt, which are formed sequentially on the semiconductor structure 1000c in one direction from the semiconductor stack 10c to the second contact point 90c. In the embodiment, the second contact part 602c also comprises a first section and a second section similar to the first contact part 601c. The material of the first and second sections of the second contact part 602c can be the same as that of the first contact part 601c. In one embodiment, the reflective structure and the first contact part 601c comprise the same high-reflectivity material. The reflective structure and the second contact part 602c comprise the same high-reflectivity material.In one embodiment, the reflection structure, the first contact part 601c and the second contact part 602c contain silver.

[0063] In one embodiment, the light-emitting device 2c comprises the second transparent conductive section s20c and the third transparent conductive section t30c between the contact layer 60c and the first semiconductor layer 101c, wherein both the first contact part 601c and the second contact part 602c contain silver, and the adhesion layer 51c between the contact layer 60c and the second insulating structure 50c. Compared to the light-emitting device 2c, the conventional light-emitting device is similar to the aforementioned sample C and contains a first contact part without silver. For example, the material of the first contact part of the conventional light-emitting device comprises Cr / Al / Cr / Al / Cr / Pt, which is formed sequentially on a semiconductor structure 1000c.The light-emitting device 2c in the present embodiment exhibits a higher brightness, caused by the first contact part 601c with silver, in order to increase the reflective area of ​​the light-emitting device 2c, and thus the brightness of the light-emitting device 2c could be improved. The brightness (I. V2 ) of the conventional light-emitting device is 923.75 mW, and the brightness (I V2 The power of the light-emitting device 2c in the embodiment is 965.83 mW. Therefore, the brightness of the light-emitting device 2c in the embodiment is increased by 4.56% compared to the conventional light-emitting device.

[0064] Fig. Figure 8 is a schematic view of a light-emitting device 3 in accordance with an embodiment of the present application. The light-emitting device can be selected from the foregoing embodiments and is mounted on the first spacer 511 and the second spacer 512 of the housing substrate 51 in the form of a flip chip. The first spacer 511 and the second spacer 512 are electrically insulated from each other by an insulating section 53 containing an insulating material. The main light extraction surface of the flip chip is on one side of the growth substrate opposite the contact point formation surface. A reflective structure 54 can be provided around the light-emitting device to increase the light extraction efficiency of the light-emitting device 3.

[0065] Fig.Figure 9 shows a structural diagram of a light-emitting device 4 in accordance with an embodiment of the present application. A lamp comprises a casing 602, a lens 604, a light-emitting module 610, a base 612, a heat sink 614, a connecting element 616, and an electrical connecting device 618. The light-emitting module 610 comprises a carrier 606 and several light-emitting devices 608 on the carrier 606, wherein the several light-emitting devices 608 can be the light-emitting devices or the light-emitting device 3 described in the preceding embodiments.

Claims

[1] Light-emitting device comprising: a semiconductor structure (1000c) comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer (101c), a second semiconductor layer (102c) on the first semiconductor layer (101c) and an active layer (103c) between the first semiconductor layer (101c) and the second semiconductor layer (102c), wherein the first semiconductor layer (101c) comprises a first surface (1011c), the second semiconductor layer (102c) comprises a first edge (E1) and a first region, and the semiconductor structure (1000c) comprises an outer wall (1001c) connected to the first surface (1011c); a reflection structure located on the second semiconductor layer (102c) and comprising a reflection layer (40c), wherein the reflection layer (40c) comprises an outer edge (401c) and a second region; a transparent conductive layer (30c) between the semiconductor structure (1000c) and the reflective structure; and a first insulating structure (20c) on the second semiconductor layer (102c), wherein the reflective layer (40c) covers part of the first insulating structure (20c), wherein the second region of the reflective layer (40c) is not smaller than 80% of the first region of the second semiconductor layer (102c); and wherein the outer edge of the reflective layer (40c) does not extend outwards to exceed the first edge (E1). [2] Light-emitting device according to claim 1, wherein the transparent conductive layer (30c) comprises a first outer edge (301c) closer to the first edge (E1) than the outer edge (301c) is to the first edge (E1), and which does not extend beyond the first edge (E1). [3] Light-emitting device according to claim 1, further comprising a first insulating structure (20c) on the second semiconductor layer (102c), and the reflection structure further comprising a barrier layer (41c), wherein the reflection structure covers a part of the first insulating structure (20c). [4] Light-emitting device according to claim 1 or 3, further comprising a second insulating structure (50c) covering the reflection structure and the outer wall (1001c). [5] Light-emitting device according to claim 2, further comprising a first insulating structure (20c) on the second semiconductor layer (102c), wherein the transparent conductive layer (30c) covers the first insulating structure (20c). [6] Light-emitting device according to one of the preceding claims, wherein the first edge (E1) of the second semiconductor layer (102c) surrounds the outer edge of the reflective layer (40c). [7] Light-emitting device according to one of the preceding claims, further comprising a first contact part (601c) and a second contact part (602c) on the reflection structure, wherein the first contact part (601c) is electrically connected to the first semiconductor layer (101c) and the second contact part (602c) is electrically connected to the second semiconductor layer (102c). [8] Light-emitting device according to claim 7, further comprising a third insulating structure (70c) on the first contact part (601c) and the second contact part (602c). [9] Light-emitting device according to claim 7, further comprising a first contact point (80c) connected to the first contact part (601c) and a second contact point (90c) connected to the second contact part (602c). [10] Light-emitting device according to claim 7, wherein the first surface (1011c) is an outer circumferential surface of the semiconductor structure (1000c) and the first contact part (601c) contacts the first surface (1011c).

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