Method, electron beam gun and control device

Abstract

Method (500) for providing an electron beam (23), comprising the method (500): • irradiating (501) a workpiece with an electron beam (23), wherein a deflection sequence is repeatedly performed according to which the electron beam (23) is deflected; • wherein the electron beam (23) is provided according to a power parameter (704) which represents a target beam power of the electron beam (23); • for each section of the deflection sequence, setting an initial target value, which represents an energy budget related to the section; • determining a beam power based on the initial target value; and • during irradiation (501), updating the power parameter (704) based on the determined beam power.

Description

The invention relates to a method, an electron beam gun and a control device. In general, a high-power electron beam can be provided by a so-called electron beam gun, allowing the electron beam to process a substrate or target within a vacuum process chamber. Besides this and other high-power electron beam applications, a low-power electron beam can also be used to irradiate other workpieces. For example, the electron beam can be guided along the surface of a target within the vacuum process chamber and / or target material within the target can be vaporized. Thus, for instance, an electron beam coating process can be implemented to coat a substrate within the vacuum process chamber with vaporized target material. Furthermore, the electron beam can also be used to process a substrate or support within the vacuum process chamber, e.g., to heat it or to modify its shape or structure, e.g., to cut it, whereby the electron beam can be guided along the surface of the substrate or support. In general, for various processes, it may be necessary to guide or modify the point of impact P(x,y,z) of an electron beam within a vacuum process chamber along a predefined trajectory T(P,t).The respective point of impact P(x,y,z) of the electron beam is determined by the path of the electron beam in the vacuum process chamber and the relative position of the respective area that limits the propagation of the electron beam (i.e., the position of the surface on which the electron beam then hits) to the electron beam. An electron beam gun, for example, can comprise an electron beam source and a deflection device, wherein a directed electron beam can be generated by the electron beam source and wherein the directed electron beam can be deflected by an angle (also called the deflection angle) by the deflection device. Conventionally, deflection signals are used to supply the deflection device with the necessary electrical currents from the desired point of impact P(x,y,z), the magnitude of which ultimately defines the deflection angle. Deflection of an electron beam allows its power to be distributed. This is conventionally done by irradiating recurring patterns (also called sequences) composed of individual segments (e.g., deflection figures) whose properties, such as residence time, are specifically controlled. The effective power supplied to a deflection figure is determined by the beam power (total gun power) and the proportion of the figure's residence time to the total sequence time. In a conventional control system, the beam power and figure dwell time are set independently to control the deflection, and the electron beam is then supplied and / or deflected accordingly. The resulting power component of a deflection figure (e.g., expressed as a percentage or in watts) is calculated and displayed based on this. Further reference is made to DE 10 2014 105 452 B3, DE 10 2015 107 430 A1, DE 10 2016 122 671 A1 and US 5 003 151 A. According to various embodiments, it has been recognized that such a conventional control system is limited in its capabilities when using multiple deflection patterns, e.g., to generate an evaporation process. For example, while the beam power and the pattern residence time are independent parameters, they always affect the properties of all deflection patterns simultaneously. Therefore, it is not readily possible, for instance, to change the current partial power in one deflection pattern while leaving the partial powers of the other deflection patterns unchanged. According to various embodiments, a method, an electron beam gun, and a control device are provided, which implement a control path that independently controls the deflection patterns. This allows for intuitive and convenient correction of, for example, vapor density distributions, which can be achieved by superimposing multiple vapor sources. In other words, the control of the deflection pattern components can be simplified from a technological perspective. The electron beam power required to achieve the specified power distribution can be determined intuitively; that is, it is not used as a reference variable. According to various embodiments, a method can include: optionally transporting and / or holding a workpiece (e.g., a substrate), e.g., in an irradiation area (e.g., a vacuum area); irradiating the workpiece or a target material whose state of matter is to be changed (e.g., a target material with which the substrate is to be coated) by means of an electron beam, wherein a deflection sequence is repeatedly performed according to which the electron beam is deflected, the electron beam being provided according to a power parameter representing a target beam power of the electron beam; for each section of the deflection sequence, setting a first setpoint representing an energy budget related to that section; determining a beam power based on the first setpoint; and during irradiation, updating the power parameter based on the determined beam power.Fig. 1 shows an electron beam process arrangement according to various embodiments in a schematic side view or cross-sectional view; Fig. 2A shows an electron beam source according to various embodiments in a schematic side view or cross-sectional view; Fig. 2B shows an electron beam gun according to various embodiments in a schematic side view or cross-sectional view; Fig. 3 shows a deflection system according to various embodiments in a schematic side view or cross-sectional view; Figs. 4, 5, 6B and 7 each show a method according to various embodiments in a schematic diagram; Fig. 6A shows a control device according to various embodiments in a schematic circuit diagram; Figs. 8, 9 and 10 each show different modes of the method according to various embodiments in a schematic control diagram; Fig.Figure 11 shows the several different modes of the method according to different embodiments, each in a table; and Figure 12 shows different modes of the method according to different embodiments in several diagrams. Figure 13 shows the method according to different embodiments in comparison to a conventional control system. The following detailed description refers to the accompanying drawings, which form part thereof and illustrate specific embodiments in which the invention can be implemented. In this context, directional terminology such as "top," "bottom," "front," "back," "anterior," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves only for illustration and is in no way limiting. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention.It is understood that the features of the various exemplary embodiments described herein can be combined with one another, unless specifically stated otherwise. The following detailed description is therefore not to be interpreted in a limiting sense, and the scope of protection of the present invention is defined by the appended claims. Within the scope of this description, the terms "connected," "connected," and "coupled" are used to describe both direct and indirect connections (e.g., resistive and / or electrically conductive, such as an electrically conductive connection), direct or indirect connections, and direct or indirect couplings. In the figures, identical or similar elements are designated with identical reference numerals where appropriate. According to various definitions, a quantity can be understood as a physical quantity (e.g., a location) that represents a quantitatively measurable property of a physical object, process, or state (e.g., describes it and / or correlates with it). Its value (quantity value) can optionally depend on time t, for example, the strength of a signal (also called signal intensity) or the point of impact. Optionally, the physical quantity, e.g., an electric field, can exhibit anisotropy with respect to physical space and / or time, i.e., the quantity value depends on the measurement direction and / or sequence. According to various embodiments, the signal strength can generally represent an electrical quantity of a signal (e.g., the deflection signal), such as its current, voltage, amplitude, power, equivalent value, peak value, etc. Intuitively, the signal strength can have at least one electrical value (i.e., one or more electrical values) that characterizes at least one power value of the signal (e.g., the deflection signal and / or according to the respective deflection parameter), such as at least one electric current, at least one electric flux, at least one electric potential, at least one electric power, and / or at least one electric voltage, or at least one time course of the at least one electrical value. The signal strength can, for example, correlate with an electric and / or magnetic field by which the electron beam is deflected and / or generated. In general, different (physical) quantities can be used to represent the same property of a physical entity (e.g., an object, process, or state). These different physical quantities can be related to each other (e.g., by means of invariant quantities and / or quantities inherent to the entity) (e.g., bijectively), such that they can be transformed into one another by considering the relationship (e.g., a function or dependency between them). For example, momentum and kinetic energy are functions of mass and velocity, i.e., they are related to each other by means of mass and velocity, and, if the mass is known, both can represent the velocity and / or each other. In other words, the related (physical) quantities can be transformed into one another; that is, they also represent each other.The quantities representing each other can, for example, be of the same type, e.g. kinematic, mechanical, geometric, thermodynamic, electrical, magnetic, radiometric (e.g. photometric, e.g. optical), etc. The kinetic energy of the electron beam (i.e., its electrons) can be expressed using the appropriate relationship (e.g., electron charge and / or electron mass) as well as by the accelerating voltage (e.g., a high voltage), the electric accelerating field, the electron beam power, the velocity of the electrons, or their momentum. The kinetic energy of the electron beam can be defined by the accelerating voltage used to generate the electron beam, i.e., by which the electrons of the electron beam are accelerated. The greater the accelerating voltage, the greater the kinetic energy of the electrons in the electron beam can be, and thus their velocity. The sum of the kinetic energy of all electrons in the electron beam (i.e., the kinetic energy of the electron beam) can be the total energy.Define electron beam power (also known as electron beam power). Control can be understood, according to various interpretations, as the intentional influencing of a system. The system's state can be changed according to a predefined setting. Regulation can be understood as control, but with the additional step of counteracting changes in the system's state caused by disturbances. Visually, the control system can have a forward-directed control path, thus implementing a sequential control that converts an input variable into an output variable. However, the control path can also be part of a control loop, thus implementing regulation. In contrast to pure forward control, regulation involves a continuous influence of the output variable on the input variable, which is effected by the control loop (feedback). In other words, regulation can be used as an alternative or additional to control, or alternatively, regulation can be implemented as an alternative or additional to control.An electron beam can be understood, according to various embodiments, as a directed (e.g., collinear and / or collimated) propagation of electrons. The power density (power per unit area of ​​the electron beam) introduced by the electron beam can only fluctuate and / or decrease insignificantly. For example, the power density of the electron beam can decrease by less than approximately 20% per meter (beam length) (e.g., less than approximately 10%, 5%, or 1%). If the electron beam is deflected, its power (also referred to as electron beam power, i.e., its radiative flux) is figuratively distributed in the irradiated space as a function of time, thus providing a spatially distributed power density. The spatially distributed power density can generally be expressed as a function of the deflection angle by the direction-dependent radiative intensity I(αx, αy) (radiative flux per unit solid angle).This should not be confused with the radiation intensity of the electron beam (also called power beam profile) itself, which describes the power profile of the electron beam. The electron beam power Φ can denote the power with which the electron beam is provided, e.g., generated. Due to the deflection of the electron beam, the direction-dependent radiation intensity I(αx, αy) can generally be a time-dependent quantity, i.e., I(t) = I(αx(t), αy(t)). The direction-dependent radiation intensity I(αx, αy) is obtained as a linear time average over the period of a deflection sequence (i.e., the equivalent of the radiation intensity). The direction-dependent radiation intensity I(αx, αy) can be the spatial and / or temporal distribution of the electron beam power provided by deflecting the electron beam. An electron beam gun can generate a directed electron beam (e.g., with a beam power of more than one kilowatt, e.g., with a beam power in the range of approximately 1 kW to approximately 1 MW) and deflect it perpendicular to its direction of propagation (described as the x and y directions) by means of controlled and / or regulated magnetic and / or electric fields. For example, the magnetic fields can be generated by means of deflection coils, whereby the currents required for the deflection coils can be generated by means of a deflection signal and a deflection amplifier to amplify the deflection signal. The deflection amplifier can receive the deflection signal for controlling the x and y setpoints for the deflection of the electron beam as an analog deflection signal with the deflection voltages (Ux(t), Uy(t)), or more generally, the signal strength S. The signal strength S, e.g.The deflection voltages (Ux(t), Uy(t)) of the analog deflection signal define, for example, the deflection currents (Ix(t), Iy(t)) provided by the deflection amplifier, which in turn define the corresponding deflection angles α(t) = α(αx(t), αy(t)) of the deflection of the electron beam from its direction of propagation. In other words, the signal strength S (e.g., signal power) can correspond to the deflection angle α(t) = α(αx(t), αy(t)). These analog deflection signals, with signal strength (Sx(t), Sy(t)) and, for example, deflection voltages (Ux(t), Uy(t)), can be generated using a signal generator. The deflection signals can be generated continuously and at high speed throughout the entire process time (during which the electron beam is generated). Depending on the specific embodiment, various sequence modes are provided for electron beam process generation. The complete cycle of all preselected deflection patterns is referred to as the deflection sequence. The following sequence modes are described in more detail below: a time-based mode; a time-based mode with power adjustment; a power-based mode; and a power-based mode with sequence adjustment. Depending on the selected sequence mode, the figure dwell times and electron beam power can be determined (e.g., calculated) and / or displayed based on user-defined settings. Several (e.g., 7) different figure modes are available, which are described in more detail below. Fig. 1 illustrates an electron beam processing arrangement 100 according to various embodiments in a schematic side view or cross-sectional view. According to various embodiments, an electron beam processing arrangement 100 can comprise: a vacuum chamber 224 (also referred to as a vacuum processing chamber) in which at least one (i.e., exactly one or more than one) irradiation area 224a, 224b is arranged; at least one electron beam gun 112, which comprises an electron beam source 112q and a deflection system 112a for deflecting an electron beam 23 into the multiple irradiation areas 224a, 224b. At least one vacuum area can be provided or created in the vacuum chamber 224. Optionally, the electron beam gun 112 can be arranged in an additional vacuum chamber (not shown) or at least have its beam output connected to such a chamber in a vacuum-tight manner. The multiple vacuum chambers can be separated from each other gas-tight, for example, by means of beam-transparent windows (also called beam windows). Alternatively or additionally, the additional vacuum chamber can incorporate a differential pump stage. Optionally, one or more irradiation areas can be vacuum areas and / or a vacuum can be created or generated within them. To illustrate, a workpiece positioned in a vacuum can be irradiated or irradiated. Alternatively or additionally, one or more irradiation areas can be at a pressure greater than a vacuum (e.g., approximately atmospheric pressure), for example, while the electron beam is deflected into them, e.g., when a workpiece is irradiated within them. For example, a workpiece held at atmospheric pressure can be irradiated, e.g., seeds, one or more medical devices, or one or more polymers (e.g., a paint). For example, the workpiece can be located outside the vacuum chamber or a vacuum system to which the vacuum chamber is connected, and be irradiated by the electron beam through a beam window. In other words, the electron beam can be directed onto a beam window. A vacuum pump arrangement of the vacuum chamber 224 can be configured to remove a gas (e.g., a process gas) from the vacuum area or areas (e.g., one or more than one irradiation area 224a, 224b) so that a vacuum (i.e., a pressure less than 0.3 bar) and / or a pressure in a range of approximately 10⁻³ millibars (mbar) to approximately 10⁻⁷ mbar (in other words, high vacuum) or a pressure less than high vacuum, e.g., less than approximately 10⁻⁷ mbar (in other words, ultra-high vacuum) is or can be provided within the vacuum area (e.g., the vacuum chamber). The electron beam 23 can be deflected, for example, according to a deflection sequence, e.g., several times in succession according to the deflection sequence. A deflection sequence can intuitively represent a sequence of target impact points and / or a target trajectory (also referred to as the target deflection trajectory) towards which the electron beam 23 is directed (i.e., which the electron beam 23 is to trace). The deflection sequence can have and / or define at least one (i.e., exactly one or more than one) deflection pattern. The deflection pattern can define a closed trajectory 155 or a sequence of target impact points 155 along the closed trajectory 155, which is to be irradiated (the so-called impact pattern 155). The impact pattern 155 (also referred to as the irradiation pattern) can, for example, represent a trajectory T(P,t) of the impact location P(x,y,z) of the electron beam 23.The size and orientation of the impact figure 155 can depend on its position in space and can be changed according to various embodiments depending on the time by means of a transformation, as will be described in more detail later. More generally, the impact figure 155 is described by the deflection figure (also called deflection pattern), which can be related, for example, to the deflection angle (αx(t), αy(t)) by which the electron beam 23 is deflected from its rest position. Each deflection figure can be assigned to a deflection region 224a, 224b. For example, the corresponding impact figure can be located in a deflection region 224a, 224b. More generally, the deflection figure can map the electron beam 23 onto the impact figure 155 (analogous to a central projection). Each deflection sequence can have or be formed from one or more deflection figures. Optionally, the electron beam processing arrangement 100 can have at least one workpiece holder 114 (i.e. exactly one or more than one workpiece holder) for holding the one or more than one workpiece to be irradiated in one or more than one irradiation area 224a, 224b of the multiple irradiation areas. In the irradiation area 224a, 224b, for example, a target material can be arranged or arranged which is to be vaporized or melted by means of the electron beam 23. Vaporization can be generally understood as the conversion of a solid state (e.g., a solid) and / or liquid state (e.g., a liquid) into a gaseous state (i.e., into the gas phase, e.g., into a gas or vapor) and can also involve sublimation. Melting can be generally understood as the conversion of a solid state (i.e., the solid phase) into the liquid state (i.e., into the liquid phase). Alternatively or additionally, a substrate to be irradiated can be arranged or arranged in the irradiation area 224a, 224b. In other words, one or more workpieces can, for example, include or be formed from a substrate and / or a target material. The at least one workpiece holder can optionally be configured to allow the exchange and / or transport of one or more workpieces (for example, it can be lockable). The substrate can be transported, for example, by means of a substrate transport device (e.g., having one or more transport rollers). For example, the electron beam processing arrangement 100 can have at least one target holder 114 (i.e., exactly one or more than one target holder) for holding one or more than one target material (e.g., also referred to as evaporation material or melting material, depending on its use) in one or more than one irradiation area 224a, 224b of the multiple irradiation areas. Each irradiation area 224a, 224b can optionally contain one or more than one target material which is to be evaporated by means of the electron beam 23. Alternatively or additionally, the electron beam processing arrangement 100 can have at least one substrate holder 114 (i.e. exactly one or more than one substrate holder) for holding one or more than one substrate to be coated and / or irradiated in one or more than one irradiation area 224a, 224b of the multiple irradiation areas or opposite them. In other words, the electron beam can be used for one or more surface treatment processes, one or more heating processes, one or more vaporization processes, and / or one or more melting processes. More generally, one or more workpieces, such as a workpiece to be surface treated, heated, vaporized, and / or melted, can be irradiated with the electron beam. The one or more workpieces can be held in a workpiece holder. The target material, i.e., the material to be vaporized (the vaporized material), can be, for example, a metal (e.g., an alloy), an organic material, a plastic, graphite, or a ceramic. The distance between the electron beam source 112q and the vaporized material can be, for example, in a range of approximately 0.5 m to approximately 5 m, or in a range of approximately 1 m to approximately 2 m. Alternatively or additionally, the target material can be located or be located in a vacuum, for example, while it is irradiated and / or vaporized. For example, one or more substrates can be processed or treated, e.g., machined, heated, coated, and / or structurally modified. One method for coating a substrate is physical vapor deposition (PVD), also known as physical gas phase deposition. In this process, an electron beam is used to transfer a material to be vaporized (the so-called target material) into the vapor phase (gas phase), e.g., by means of electron beam evaporation (EB-PVD). In other words, a deflected electron beam can be used to perform physical gas phase deposition. Fig. 2A illustrates an electron beam source 112q, e.g. of the electron beam process arrangement 100, according to various embodiments in a schematic side view or cross-sectional view. According to various embodiments, the electron beam source 112q can include an electron source 202 for generating and / or emitting electrons 202e. The electron source 202, e.g., a thermal electron source 202, can, for example, include a cathode (e.g., made of tungsten or another temperature-resistant metal) from which the electrons exit (into free space, i.e., into a vacuum). Furthermore, the electron beam source 112q can have a beam shaping unit 204 (also called a beam bundler) which focuses the electrons 202e emitted (from the electron source 202) into a beam 23, the so-called electron beam 23. The beam shaping unit 204 (e.g., having a ring anode) can, for example, generate an electric field (also called an accelerating field) which accelerates the generated electrons 202e and / or concentrates them into a beam 23 (i.e., collimates them). To generate and emit an electron beam 23 in high-power mode, the cathode of the electron source 202 can be adapted to, or designed to generate, a high electron beam current (also referred to as a high-current cathode). An electron source 202 according to various embodiments can, for example, have a high-current cathode in the form of a flat cathode (e.g., in the shape of a truncated cone or another truncated body) or a hollow cathode. In contrast to a pointed cathode (as in the case of conventional welding guns), a flat cathode can have a flat emission surface from which the electrons emerge, subsequently forming an electron beam. The electron beam source 112q can be configured to generate an electron beam 23 with a diameter (beam diameter) in the range of approximately 1 mm to approximately 6 mm and / or with a power of more than approximately 5 kW (kilowatts), 10 kW, or 100 kW. The beam diameter can, for example, describe the cylindrical region of the electron beam 23 in which 90% of the radiation flux is concentrated. Fig. 2B illustrates an electron beam gun 112, e.g. of the electron beam process arrangement 100, according to various embodiments in a schematic side view or cross-sectional view. The greater the power of the electron beam 23, the greater the rate of gaseous vaporization that can be generated by the electron beam 23; for example, the coating rate can be increased. For a low coating rate, an electron beam with a power (also referred to as beam power) in the range of approximately 5 kW to approximately 10 kW can be provided. Alternatively, for a high coating rate, an electron beam with a beam power in the range of approximately 100 kW to approximately 1000 kW can be provided. However, an electron beam with less than 5 kW can also be generated and deflected. According to various embodiments, an electron beam source 112q (e.g., when operated in a high-power mode) can provide a beam power of more than 5 kW, e.g., with more than approximately 10 kW, e.g., with more than approximately 50 kW, e.g., with more than approximately 100 kW, e.g., of more than approximately 500 kW, e.g., in a range of approximately 100 kW to approximately 1000 kW, e.g., in a range of approximately 500 kW to approximately 1000 kW. The electron beam processing arrangement 200b, or the electron beam gun 112, can have a power supply 802 which is coupled to the electron beam source 112q. The power supply 802 can supply electrical power to the electron beam source 112q, e.g., according to the beam power or more. Alternatively or additionally, the power supply 802 can be set up to provide an electrical high voltage (acceleration voltage) of several thousand V (volts), i.e. in the kV range, and supply it to the electron beam source 112q, e.g. its beam shaping unit 204, for accelerating the electrons 202e, e.g. an electrical high voltage of more than approximately 5 kV, e.g. with more than approximately 10 kV, e.g. with more than approximately 20 kV, e.g. with more than approximately 30 kV, e.g. with more than approximately 40 kV, e.g. with more than approximately 50 kV, e.g. in a range of approximately 25 kV to approximately 60 kV. The electrical current and / or voltage provided by the power supply 802 can define an electrical power that the power supply delivers to, or that the electron beam source 112q consumes. For example, the power supply 802 can be configured to provide and deliver an electrical power to the electron beam source 112q that is equal to or greater than the beam power. Fig. 3 illustrates a control device 300 (e.g., of the deflection system 112a) according to various embodiments in a schematic side view or cross-sectional view. The control device 300 can, for example, be configured to control the deflection unit 308 of the deflection system 112a. According to various embodiments, the control device 300 can include a deflection signal generator 302, e.g., comprising at least one signal processor, e.g., a digital signal processor (DSP), and / or at least one digital-to-analog converter (DAC). The deflection signal generator 302 can be configured to provide at least one deflection signal 302a, e.g., based on at least one deflection parameter. For example, the signal strength of the deflection signal 302a can be provided according to the deflection parameter. According to various embodiments, the deflection signal generator 302 can be any suitable electronic component, e.g., a chip, a sound processor or audio processor, a main processor (CPU), a multi-core processor, a microprocessor, a digital sound processor with a coupled D / A converter (digital-to-analog converter), an analog sound processor, a digital-to-analog sound processor, a signal processor, a digital signal processor with a coupled D / A converter, a digital-to-analog signal processor, a field-programmable gate array (FPGA), a reduced-instruction-set RISC CPU, a complex-instruction-set CISC CPU, and / or the like. Optionally, the deflection signal generator 302 can be provided by or be provided by a microcomputer, e.g., a PC.The deflection signal generator 302 can optionally be computer-aided or computer-based. In general, the signal processor can be understood as a processor which is configured (e.g., by means of software and / or hardware) to convert the deflection data 304d into at least one deflection signal 302a. For example, a digital signal processor (e.g., a DSP) can be used. The signal processor can receive the deflection data 304d from a data unit 304. The data unit 304 can be provided, for example, by a beam control unit 304 (also referred to as a beam control computer, e.g., in the form of a microcomputer, such as a PC). In general, the data unit 304 can be configured to provide the data 304d (also referred to as deflection data 304d), e.g., to generate, output, store, and / or modify the data (deflection data 304d). The deflection data 304d can consist of, or be composed of, one or more sets of deflection parameters (deflection parameter sets), which are processed cyclically (i.e., repeatedly) at a predefined clock time t0 (e.g., in a range of approximately 1 µs to approximately 100 µs, e.g., approximately 10 µs (microseconds)). Based on the deflection data 304d, the signal processor can generate a corresponding (e.g., digital) deflection signal, which is converted by the DAC into an analog deflection signal 302a. The data sets can be created and processed in the data unit 304 (e.g., modified according to and / or based on a measurement signal or a specification, i.e., adapted and / or changed) and then transferred to the signal processor (figuratively, they can be loaded onto the signal processor). Alternatively or additionally, the data unit 304 can have a memory in which the data (e.g., the data sets) are stored. A deflection parameter can define a path along which the electron beam 23 is deflected (also called beam path) when it is deflected according to the deflection parameter. For example, a deflection parameter can define a point within an irradiation area 224a, 224b towards which the electron beam 23 is directed when it is deflected according to the deflection parameter. Expressed in spherical coordinates, the deflection parameter can define a deflection angle α by which the electron beam 23 is deflected from its equilibrium position, e.g., towards and / or into the irradiation area 224a, 224b. A deflection parameter can have a deflection value (e.g., a vector deflection value), which generally represents a measure (e.g., an angle, a distance, a curvature, or a force, e.g., Lorentz force) by which the electron beam 23 is deflected. For example, the deflection value can represent an angle (also called the deflection angle) by which the electron beam 23 is deflected. Alternatively or additionally, the deflection value can represent a force (e.g., Lorentz force) with which the electron beam 23 is deflected. Optionally, a deflection parameter can have a time value (e.g., a time coordinate t), such as a time at which the system switches to a subsequent deflection parameter, or a duration (also called point dwell time) during which the electron beam 23 is deflected according to the deflection value. The time value can, for example, define when and / or for how long a specific point in space is irradiated and / or what power is applied to it by the electron beam 23. The time value can be the inverse of the conversion rate. According to various embodiments, the deflection system 112a can have at least one deflection unit 308, e.g., a first deflection unit for deflecting the electron beam along a first axis (e.g., x-axis) and a second deflection unit for deflecting the electron beam along a second axis (e.g., y-axis). The second axis can, for example, be perpendicular to the first axis or at least linearly independent of it. The electron beam source 112q can emit the electron beam 23 along a third axis (e.g., z-axis, also referred to as beam axis), perpendicular to the first and second axes, in the direction of the at least one deflection unit 308. According to various embodiments, the deflection signal 302a can have several components (also referred to as coordinate components), e.g., a first coordinate component for deflecting the electron beam 23 along the first axis and a second coordinate component for deflecting the electron beam 23 along the second axis. Similarly, the deflection parameter and / or the signal strength can have several corresponding coordinate components. Optionally, each coordinate component of the deflection signal can be transmitted by means of a separate electrical voltage Ux(t) and Uy(t), e.g., to the corresponding first / second deflection unit. The deflection parameter(s), coordinate component(s), deflection signal(s), signal strength(s), formation rule(s), and / or transformation(s), as described herein, may be related to one or more coordinates of a coordinate system (e.g., a spherical coordinate system, a cylindrical coordinate system, or a Cartesian coordinate system). For example, a coordinate (e.g., an angle, a time duration, and / or a length) may be stretched or compressed. It is understood, therefore, that what is described herein is not limited to rectangular Cartesian coordinates, since any other suitable coordinate system, such as one resulting from a similarity transformation or coordinate transformation (e.g., a spherical coordinate system), may be used in an equivalent or similar manner.For the sake of clarity, the familiar and easily understandable Cartesian coordinates will be used in the following text. The control device 300 can optionally include a signal processing unit 316, which amplifies and / or smooths the deflection signal 302a and supplies the amplified and / or smoothed deflection signal 312a to the deflection unit 308 and / or couples it to the deflection unit 308. The signal processing unit 316 can include an amplifier 306 for amplifying and / or a smoothing element 402 for smoothing the deflection signal 302a. The amplifier 306 and / or the smoothing element 402 can also be part of the deflection signal generator 302 and / or be implemented together with it. As described herein, the deflection signal can be processed in various ways and pass through different stages 302a, 312a along its signal path. The various stages 302a, 312a through which the deflection signal passes along its signal path can be referred to below as the deflection signal, e.g., the digital deflection signal provided by a signal generator, the analog deflection signal provided by a DAC, the deflection signal amplified by an amplifier, the deflection signal smoothed by a smoothing element, and / or the deflection signal ultimately fed to and / or coupled into the deflection unit 308. Similarly, each deflection sequence, deflection parameter, and / or deflection figure (also referred to as a subsequence) can be processed in various ways and pass through different stages along the signal path. These different stages can be generally referred to below as deflection data 304d (e.g., deflection sequence, deflection parameter, or deflection figure), e.g., a transformed and / or updated deflection data 304d. The deflection signal generator 302 can include at least one clock, e.g., as part of the signal processor and / or the DAC. The clock can provide a clock signal whose frequency fT (also referred to as clock frequency) or its reciprocal, the period t0, synchronizes the components of the deflection signal generator 302. The clock signal can be coupled to and / or provided by the DAC and / or the signal processor. For example, the conversion rate, i.e., the number of deflection parameters that are converted into the deflection signal 302a per unit of time, can correspond to the clock frequency. A digital-to-analog converter (DAC) is configured to generate an analog signal (e.g., a stepped one) from a digital signal. The digital signal can be generated from the deflection data 304d, for example, by means of at least one signal processor. The deflection data 304d can consist of a sequence of deflection parameters, which are successively converted into the signal strength of the analog signal. The conversion of the deflection data 304d into the deflection signal can, for example, be carried out according to the clock frequency. For example, with each clock cycle or per period t0 of the clock signal, a deflection parameter can be converted into a signal strength of the deflection signal. In other words, the rate at which the deflection parameters are successively converted into individual signal strengths of the deflection signal can correspond to the clock frequency fT. Fig. 4 illustrates a method 500 according to various embodiments in a schematic diagram. According to various embodiments, the method in 401 can include: generating a first deflection signal 302a based on at least one deflection parameter A(P(x,t),P(y,t)), e.g., according to a (e.g., the same) generation rule B and / or by means of the deflection signal generator 302. The deflection signal generator 302 can, for example, implement the generation rule B. The deflection signal 302a can have the (time-dependent) signal strength SA(t)=B(A). The at least one deflection parameter A(P(x,t),P(y,t)) can, for example, be part of a data set or constitute it. Optionally, the deflection signal 302a can have at least a first coordinate component SA,x(t,A(x,t)), which is assigned to a first coordinate x, and / or a second coordinate component SA,y(t,A(y,t)), which is assigned to a second coordinate y. The formation rule B can intuitively assign a signal strength SA(t) of the deflection signal 302a to each deflection parameter A(P(x,t),P(y,t)). Optionally, the procedure in 403 can include: smoothing of the deflection signal 302a, e.g., according to a (e.g., the same) smoothing characteristic G(t) and / or by means of a smoothing element 402. The smoothing element 402 can, for example, implement the smoothing characteristic G(t). The smoothing can convert the first deflection signal 302a into a second deflection signal 312a. The smoothing can be performed, for example, by filtering out (e.g., removing and / or attenuating) certain features of the first deflection signal 302a, e.g., frequency components and / or noise. The filtering can be performed, for example, by means of a filter of the smoothing element 402. Alternatively or additionally, the method in 403 can include: amplifying the deflection signal 302a, e.g. according to a (e.g. the same) amplification characteristic and / or by means of an amplifier 306. The amplifier 306 can, for example, implement the amplification characteristic. The amplification process can, for example, involve converting the first deflection signal 302a into a second deflection signal 312a, which has a greater signal strength (e.g., power) than the first deflection signal 302a. The amplifier 306 can be understood as an electronic assembly with at least one active component (e.g., a transistor and / or a vacuum tube) that processes the incoming first deflection signal 302a in such a way that the output signal (i.e., the output signal strength) is greater than the input signal strength. For example, the amplifier can output more power than it receives on the input side (i.e., at its signal input). The additional power can be supplied to the amplifier 306 by means of a power source. Fig. 5 illustrates a method 500 according to various embodiments in a schematic flowchart. Method 500 can optionally include in 509: Transporting and / or holding one or more workpieces (e.g., one or more substrates) in an irradiation area (e.g., a vacuum area). Holding the workpiece(s) can be accomplished by means of a workpiece holder. The workpiece holder can optionally be configured to allow for workpiece exchange and / or transport. Transporting the one or more substrates can be accomplished, for example, by means of a substrate transport device (e.g., having one or more transport rollers). Method 500 can include in 501: Deflection of the electron beam, for example in the irradiation area (e.g., vacuum area), into this area, and / or into the irradiation area, for example onto the workpiece (e.g., onto the substrate or onto a material to be evaporated with which the substrate is to be coated, and / or onto a melt). The deflection 501 can, for example, include: Irradiation of the workpiece (e.g., the substrate, the melt, or the material to be evaporated) by means of an electron beam. Deflection 501 can be configured to deflect the electron beam according to a deflection sequence. Deflection 501 can be configured to repeatedly execute a deflection sequence according to which the electron beam is deflected. Irradiation can, for example, involve: heating the workpiece, e.g., the substrate and / or the target material (e.g., the material to be vaporized and / or the material to be melted), using the electron beam. Irradiation can, for example, involve: vaporizing the material to be vaporized using the electron beam. Irradiation can alternatively or additionally involve: melting the material to be melted using the electron beam. Using the electron beam, the target material can, for example, be heated, at least in sections, to a temperature equal to or greater than a state transition temperature (e.g., a melting point, a vaporization point, and / or a sublimation point) of the target material. The substrate, on the other hand, can be heated, or become heated, to a temperature lower than its melting point using the electron beam, e.g., to a temperature in the range of approximately 50% to approximately 90% of the substrate's melting point. The deflection 501 can optionally feature the ability to provide the electron beam according to a power parameter, which represents a target beam power of the electron beam. Procedure 500 may include in 503: Specifying a first specification (also called energy specification) which represents a section-related energy budget. For example, the specification may assign an energy budget to each section, where the section is a section of the deflection sequence or a section of the irradiated area (e.g., vacuum area). Setting 503 can include: for each section of the deflection sequence, setting a first setpoint representing an energy budget specific to that section (for each iteration of the deflection sequence). Alternatively or additionally, setting 503 can include: for each section of the irradiation area (e.g., vacuum area), setting a first setpoint representing an energy budget specific to that section (for each iteration of the deflection sequence). The expression "for each iteration of the deflection sequence" with respect to a physical quantity can, for example, be understood as the deflection sequence-related equivalent of the physical quantity, i.e., the value of the physical quantity averaged over the duration of the iteration. Optionally, the energy budget for each section can be identical. In other words, the initial setting for each section of the deflection sequence can specify an identical energy budget to be transferred by the electron beam for each iteration of the deflection sequence. Procedure 500 can exhibit in 505: Determining a beam power based on the first specification. Method 500 can include in 507: Updating the power parameter based on the determined beam power during evaporation. Fig. 6A illustrates a control device 600 in the method 500 according to various embodiments in a schematic circuit diagram, e.g. the control device 300. Fig. 6B illustrates the method 500 according to various embodiments in a schematic diagram 601, in which the deflection 501 over time t is illustrated. The control device 600 can have at least one (i.e., exactly one or more than one) signal processor 1202a (e.g., multiple signal processors), each of which drives and / or deflects at least one (i.e., exactly one or more than one) electron beam. Optionally, the control device 600 can have one or more DACs, each of which is assigned to exactly one of the multiple signal processors (and, for example, converts its digital signal into the deflection signal 302a). For example, each signal processor can provide multiple digital signals, each of which is fed to exactly one DAC. The control device 600 and / or each signal processor can (e.g., exactly) include a clock generator 806, which is configured to provide a clock signal 806t and / or a clock frequency fT, e.g., the clock signal 806t with the clock frequency fT. The clock generator or each clock generator 806 can, for example, include an (e.g., electromechanical) oscillator (e.g., a quartz crystal) whose resonant frequency is the clock frequency fT, or more generally, which is configured to oscillate at the clock frequency fT. The deflection signal 302a can be provided by means of the clock signal 806t and / or according to the clock frequency fT, e.g., by at least one signal processor 1202a. The rate at which successive deflection parameters are converted into individual signal strengths of the deflection signal 302a (conversion rate) can correspond to the clock frequency fT. Each signal processor can, for example, have its own clock frequency fT at which it converts the deflection parameters into individual signal strengths of the deflection signal 302a. The control device 600 can have a first circuit 324 (e.g. having one or more than one processor) and a second circuit 326 (e.g. having one or more than one processor). The first circuit 324 can be configured to provide a setpoint beam power of the electron beam according to a (e.g., scalar and / or time-invariant) power parameter 704. For example, the first circuit 324 can be configured to control the power supply 802 (e.g., its high-voltage generator), e.g., according to the power parameter 704. Alternatively or additionally, the first circuit 324 can be integrated into the power supply 802. The second circuit 326 can be configured to determine a beam power based on the energy specification and to update the power parameter 704 based on that. In general, the energy target can have several components, each of which is assigned to a section of the deflection sequence and specifies the energy budget related to the assigned section. For example, the energy specification can have one or more first and second components. However, not all components necessarily need to be specified. For instance, one or more first components and / or the second component can be specified. Intuitively, each first component of the energy specification can indicate what proportion of the radiation flux (also called the radiation flux fraction) the respective deflection pattern should receive. The radiation flux fraction can optionally differ between different deflection patterns; that is, it does not necessarily have to be identical. For example, a first deflection pattern can receive a larger radiation flux fraction than a second deflection pattern. The first component of the energy specification can be assigned to exactly one deflection pattern and represent the energy budget related to that deflection pattern. The second component of the energy specification can be assigned to each deflection parameter (e.g., all deflection parameters collectively) and represent the energy budget related to each deflection parameter. Intuitively, the second component of the energy specification can indicate the radiation flux fraction to be allocated to each individual deflection parameter. Optionally, each deflection parameter in the deflection sequence can receive an equal radiation flux fraction. One or more components and the second component can intuitively be part of a first dimension of the energy specification, with the first-dimensional components being independent of each other. Optionally, the energy specification can specify a power density (e.g., time-dependent and / or direction-dependent) in a second dimension. In other words, the energy specification can have a tensor (e.g., a third-rank or lower-rank tensor), e.g., a matrix (i.e., a second-rank tensor), e.g., a vector (i.e., a first-rank tensor), e.g., a scalar (i.e., a zero-rank tensor). By means of the deflection signal generator 302 (also referred to as signal generator), at least one (i.e., exactly one or more than one) electron beam 23 can be deflected multiple times according to a (e.g., the same) deflection sequence AS. For example, the deflection according to a (e.g., the same) deflection sequence AS can be repeated, e.g., more than twice (e.g., more than three times, more than five times, more than ten times, more than fifty times, or more than one hundred times), e.g., W times. The index n of AS can therefore be from 1 to W and sequentially reference the iterations of the deflection sequence. The number W of repetitions of the deflection sequence can, for example, be more than 10, e.g., 100, e.g., more than 1000. For example, the deflection of the respective electron beam 23 according to the deflection sequence can be repeated W times (compare also Fig. 6B). The nth deflection sequence ASn can, for example, have a duration tA (also denoted as sequence duration tA). The sequence duration tA can be intuitively understood as the time required to complete a deflection sequence. This completion can occur regularly, for example, with a frequency of 1 / tA. Optionally, at least two repetitions of the deflection sequence ASn, ASm(n≠m) can differ from each other and / or be transformed into one another by means of a transformation T. Optionally, the nth (e.g., first) iteration and the mth (e.g., second) iteration can differ from each other in at least one of the following sequence properties: their sequence duration tA, their number NF of deflection figures (also referred to as figure count), the order of deflection figures, and / or their number NS of deflection parameters (or target points). The term "sequence power" can represent the number NS of deflection parameters of the deflection sequence and / or the sequence duration tA (which are, for example, linked to each other via the bar duration t0 according to tA=t0·NS). Each deflection sequence ASn can contain at least one (e.g., more than one) deflection figure FS, e.g., exactly NF deflection figures FS1, ..., FSn, ..., FSV, where the index n uniquely references the deflection figures. The number V=NF of deflection figures FS for each iteration of the deflection sequence AS can be, for example, more than 2, e.g., more than 5, e.g., more than 10, e.g., more than 25, e.g., more than 50, e.g., more than 100, e.g., more than 1000. Each deflection figure FS can have a duration tF (also called figure duration tF). Alternatively or additionally, immediately consecutive deflection figures FSn, FSn+1 can differ from each other, e.g., in their figure duration tF, in the sequence of deflection parameters, their figure mode, and / or in their number NF of deflection parameters or target points. The term “figure power” can represent the number of NF of deflection parameters of the deflection figure and / or the figure duration tAre (which are linked to each other via the beat duration t0 according to tF=t0·NF). Optionally, the same deflection pattern can be repeated multiple times (for each iteration of the deflection sequence), e.g., more than twice (e.g., more than three times, more than five times, more than ten times, more than fifty times, or more than one hundred times), or more generally, P times. P can generally be a positive real number. In other words, at least one of the repeated deflection patterns can be incompletely traversed, as will be described in more detail later. The total duration for which the electron beam is deflected according to the same (e.g., repeated) deflection pattern can be denoted as the figure dwell time tFW. The figure dwell time tFW is then tFW = tF · P. Each deflection pattern FS can have a sequence of deflection parameters (also called a sequence of multiple deflection parameters) A1, ..., An, ..., AV, where the index n uniquely references the deflection parameters. The number V = NV of deflection parameters FS in each iteration of the deflection pattern can be a natural number corresponding to the number of target hit locations P, i.e., An = An(Pn(xn,tn), Pn(yn,tn)). The number NV of deflection parameters of each deflection pattern FS can be more than 2, e.g., 5, 10, 25, 50, 100, or 1000. Each deflection parameter An can have a duration t0 (also called deflection duration t0). Alternatively or additionally, immediately consecutive deflection parameters An, Am (n ≠ m) can differ from each other, e.g.,in the deflection angle α (αx, αy) of the electron beam, the point of impact P(x,y,z) of the electron beam and / or in the time at which the electron beam is deflected according to the deflection parameter. The sequence of deflection parameters A1, ..., An, ..., Av can, for example, be processed cyclically (i.e., repeatedly) with a specified clock time t0 (e.g., in a range of approximately 1 µs to approximately 100 µs) (i.e., converted into the deflection signal). The energy budget related to a segment of the deflection sequence ASn (also called a sequence segment) can be intuitively understood as the beam energy emitted for each iteration of the deflection sequence ASn while the electron beam is deflected according to the sequence segment, i.e., the beam power emitted for the duration of the sequence segment. The sequence segment can have exactly one deflection parameter or several deflection parameters, e.g., a deflection figure FS or a deflection figure FS repeated P times. The energy budget can define the energy with which irradiation area 224a is irradiated for each iteration of the deflection sequence ASnein according to the sequence segment. The energy budget can intuitively specify the (e.g., direction-dependent) fraction Φnan of the electron beam power Φ (also referred to as the power budget Φn) that is to be provided by the electron beam 23 (intuitively in the direction of deflection) in a solid angle element δΩ into which the electron beam is deflected according to the sequence segment. The sum of all solid angle elements δΩ in which the electron beam can be deflected is called the deflection field. The performance budget Φn can be understood as an equivalent value (also referred to as a linear time average), e.g. averaged over the duration of exactly one iteration of the distraction sequence. If the sequence segment has exactly one deflection parameter, then Φn = (Φ·t0) / tA (also denoted as point power ΦA = (Φ·t0) / tA). The energy budget EB is then EB = Φ·t0 = ΦA·tA. The ratio t0 / tA can describe the proportion of time that the sequence segment occupies within the entire deflection sequence. Due to the cyclic deflection of the electron beam, the electron beam is deflected periodically according to the sequence segment. Analogous to a periodic sequence of pulses, the ratio ε = t0 / tA can also be called the duty cycle ε, where ΦA = Φ·ε and EB = Φ·ε·tA. If the sequence segment has exactly j deflection parameters, then Φn = (Φ·j·t0) / tA = j·ΦA (also denoted as figure power ΦF = (Φ·j·t0) / tA). The energy budget EB is then EB = Φ·j·t0 = ΦF·tA. Analogous to a periodic sequence of pulses, the ratio ε = j·t0 / tA can also be called the duty cycle ε, where ΦF = Φ·ε and EB = Φ·ε·tA. If the sequence segment P exhibits deflection patterns, then Φn = (Φ·tF·P) / tA. The energy budget EB is then EB = Φ·tF·P. Analogous to a periodic sequence of pulses, the ratio ε = tF·P / tA can also be called the duty cycle ε, where Φn = Φ·ε and EB = Φ·ε·tA. More generally, the duty cycle ε can indicate the proportion of time that the sequence segment occupies in the entire deflection sequence and can be less than 1, e.g., less than 10⁻¹ or 10⁻². Here, ε can be defined as τ / tA, where τ is the duration of the sequence segment and the energy budget can be EB = Φ·ε·tA. Fig. 7 illustrates the method 500 according to different embodiments in a schematic diagram 700. The electron beam can be operated at an operating point, which intuitively represents a target radiation intensity (i.e., a desired radiation intensity). The target radiation intensity I(αx, αy) = δΦ / δΩ can intuitively specify the direction-dependent component of the electron beam power Φ, which is to be provided by the electron beam 23 (intuitively in the direction of deflection) in the solid angle element δΩ. The directional dependence can define the spatial distribution with which the electron beam power Φ of the electron beam 23 is emitted according to the deflection sequence. The electron beam power Φ can correspond to the power of the electron beam 23, which is deflected to distribute the radiation flux in the respective directions (α(x(t), αy(t)). The operating point, for example, has a set of operating parameters that define how the electron beam is provided, e.g., which point is irradiated at what time, for how long, and with what power. Such a set of operating parameters may, for example, include all the deflection parameters 702 of the deflection sequence and a power parameter 704, or be derived from them. The power parameter 704 may represent the target beam power (i.e., the target electron beam power Φ) of the electron beam. The electron beam can be controlled according to the set of operating parameters 704, 704. The operating parameters of the operating parameters set can be linked to additional parameters (also called modeling parameters), which, for example, relate to a deflection pattern, the deflection sequence, or a deflection parameter. For example, one of the modeling parameters, sequence power parameter 706, can represent the sequence power, e.g., the number of NS of deflection parameters for each iteration of the deflection sequence. Alternatively or additionally, sequence power parameter 706 can represent the duration t of the deflection sequence (which is, for example, linked to the clock frequency and the number of NS). For example, one of the modeling parameters, "Figure Power Parameter 708", can represent the figure power, e.g., the number of NV of deflection parameters of the deflection figure or each deflection figure. Alternatively or additionally, the figure power parameter 708 can represent the duration tF of the deflection figure (which is linked to the number of NV via the clock frequency, for example). For example, one of the modeling parameters, a point power parameter 710, can represent the proportion ΦAder of electron beam power Φ that is provided for each deflection parameter (also denoted as point power ΦAbe). Optionally, exactly one point power parameter 710 can be assigned to all deflection parameters of the deflection sequence. For example, one or more of the modeling parameters, figure power parameter 712, can represent the fraction ΦF of the electron beam power Φ provided for the deflection figure or figures (also referred to as figure power ΦF or figure partial power). Optionally, each figure power parameter 712 can be assigned to exactly one deflection figure. Unlike the modeling parameters, the operating parameters can be used directly to control the electron beam; that is, they can be used as manipulated variables. At least some of the modeling parameters and / or the operating parameters can be or become interrelated. The energy budget EB can, for example, represent the respective figure power ΦF, i.e., Φn = ΦF. Summing up over all deflection figures, the sum of their figure powers ΦF again corresponds to the target electron beam power Φ, i.e., it is Using ΦF=EB / tA, the following equation results: 701, according to which... Link 701 can be surjective but not injective. The energy budget EB, which represents the respective figure power ΦF, can, for example, be understood as an energy vector EB, where each vector component EB(FSn) is assigned to a deflection figure FS of the deflection sequence. The energy vector EB then has a dimension that corresponds to the number of deflection figures in the deflection sequence. By analogy, the figure performance ΦFund / or the figure power NF can be understood as a vector, whose vector components are each assigned to the deflection figures FS of the deflection sequence. The energy budget EB can alternatively or additionally represent the point power ΦA, i.e., Φn = ΦA. Summarized over all deflection parameters, the product of the point power ΦA and the sequence power NS corresponds to the target electron beam power Φ, i.e., Φ = NS · ΦA. With ΦA = EB / tA, the equation 703 then results, according to which Φ = NS · ΦA / tA. The equation 703 can be bijective. The energy budget EB, which represents the respective point power ΦA, can, for example, be understood as an energy scalar EB, which is identical for all deflection parameters. From the figure power ΦF and the sequence power NS, the figure power NF can be determined. In vector notation, the operation 705 results, according to which NS·ΦF / Φ=NF. From the figure power NF, the sequence power NS results from their sum over all deflection figures according to the link 707, according to which it is. The deflection parameters can ultimately be calculated from the figure power, e.g., taking into account the target radiation intensity I((αx, αy). The target radiation intensity can be stored, for example, in the form of an irradiation template, e.g., for each deflection figure in the deflection sequence. The irradiation template can intuitively define the geometric path along which the electron beam is moved and / or a contour within which the electron beam moves. The irradiation template can be intuitively understood as a digital representation of the target trajectory and / or the target irradiance. Optionally, the irradiation template can define the frequency P with which a deflection figure is repeated. If the distraction figure is repeated P times, this can be taken into account in the calculation of the sequence power and figure performance using the factor P. Figures 8, 9, and 10 each illustrate different modes 800, 900, and 1000 (also referred to as sequence modes) of the method 500 according to various embodiments in a schematic control diagram. Each sequence mode is configured to determine the operating point, e.g., the set of operating parameters 505, based on several predefined parameters (the direction of the arrows indicates the calculation direction). The parameters can optionally be specified by means of an input prompt, which is generated and / or provided, for example, by the control device 300. Each deflection figure can be assigned a set of parameters (also called deflection figure parameters) that defines the deflection according to the deflection figure. The deflection figure parameter set can, for example, include or be composed of the figure power parameter 708 and the figure performance parameter 712. Each of the multiple sequence modes 800, 900, and 1000 can be configured to provide a set of deflection figure parameters for each deflection figure such that the multiple sets of deflection figure parameters are independent of each other, meaning they are not linked. In other words, each of the multiple sequence modes 800, 900, and 1000 can allow the deflection figure parameter set of one deflection figure to be changed without changing the deflection figure parameter set of at least one other deflection figure. This allows for precise adjustment of the deflection. In a first sequence mode 800 (also referred to as time-sequence mode with power adjustment, intuitively a time mode with power adjustment), the point power parameter 710 and the figure power parameter 708 can be specified or predetermined, based on which the deflection parameters of the deflection sequence and the power parameter 505 are or can be determined. In this case, the determination 505 can, for example, be carried out without the figure power parameter 712. In other words, the figure power parameter 712 itself does not necessarily have to be known, specified, and / or determined in order to obtain a complete set of working parameters. In a second sequence mode 900 (also referred to as performance sequence mode), the figure performance parameter 712 and the sequence power parameter 706 can be specified or determined, based on which the deflection parameters of the deflection sequence and the performance parameter 505 can be determined. In this case, the determination 505 can, for example, be carried out without the point performance parameter 710. In other words, the point performance parameter 710 itself does not necessarily have to be known, specified, and / or determined in order to obtain a complete set of working parameters. In a third sequence mode 1000 (also referred to as performance sequence mode with sequence adjustment), the figure performance parameter 712 and the point performance parameter 710 can be predefined, based on which the deflection parameters of the deflection sequence and the performance parameter 505 can be determined. In this case, the determination 505 can, for example, involve determining the sequence power and / or the figure power. In other words, the sequence power parameter 706 and / or the figure power parameter 708 is an intermediate value that is further processed. Optionally, the control device 300 can provide the ability to switch between at least two of the multiple sequence modes 800, 900, and 1000. If more than the first three sequence modes are provided, for example, at least one additional sequence mode, a sequence mode from the first five can be activated from this additional sequence mode, or vice versa (i.e., it can be deactivated). For example, it is possible to switch between a pure time mode and the first, second, and / or third sequence modes (i.e., these can be activated and / or deactivated starting from normal operation). Fig. 11 illustrates the several different sequence modes 800, 900, 1000 of the method 500 according to different embodiments in a table 1100, in which the exemplary deflection sequence has two deflection figures (deflection figure 1 and deflection figure 2). In the first sequence mode (visually a time mode with power adjustment), the following parameters can be specified or defined: • optionally the number W of repetitions; • the number NF of deflection patterns for each pass of the deflection sequence; • the irradiation template for each deflection pattern of the deflection sequence; • optionally the pattern mode for each deflection pattern of the deflection sequence; • for each deflection pattern, the pattern power of the deflection pattern, e.g., the number NV of deflection parameters of the deflection pattern (corresponds, via the output rate fT and the number of repetitions of the deflection pattern, to the pattern dwell time tFW), i.e., intuitively the number of points; • the target power for the deflection parameter(s) (for example, power for 10 µs averaged over the sequence duration), i.e., intuitively the power for the output point(s). The energy budget can represent and / or define the target power for each deflection parameter, i.e., the point power. The sequence duration tA can be calculated from the sum of the figure power NV across all deflection figures in the deflection sequence. The sequence duration tA can optionally be output, e.g., displayed, along with the resulting time. The total power (i.e., the instantaneous electron beam power Φ, i.e., its instantaneous value) can be determined from the product of the sequence duration tA and the point power and output as a setpoint to the high-voltage system. Optionally, the percentage of time spent in each deflection pattern (corresponding to the percentage of the total power) can be output, e.g., displayed. Optionally, the character's power (visually, the absolute power of each decoy character) can be displayed, for example. The character's power is the product of its power (NV) and its point value. If the character power NV of at least one deflection character is to be changed, a deflection character (i.e., its deflection parameter) can be determined based on the changed character power NV (also referred to as updating the deflection character). This allows, for example, achieving the smallest possible step size. In the first sequence mode, when the character power of NVeiner a distraction character changes, the character powers of the remaining distraction characters in the distraction sequence remain constant, i.e., they are independent of each other. Updating the distractor figure can be done taking into account the optionally specified figure mode, as will be described in more detail later. In the second sequence mode 900 (visually a power mode), the following parameters can be specified or defined: • optionally the number W of repetitions; • the number NF of deflection figures for each run of the deflection sequence; • the irradiation template for each deflection figure of the deflection sequence; • optionally the figure mode for each deflection figure of the deflection sequence; • the figure power(s) (visually, each deflection figure has an absolute target power); • the sequence density (e.g., as the number NS of deflection parameters and / or as the sequence duration tA). The energy budget can define the character's power. The total power is the sum of the character powers across all distraction characters. The sequence power can be distributed among the distraction characters according to their power ratios, resulting in the character power. Optionally, the character power value can be rounded to whole numbers. Optionally, according to the specified figure mode, the most accurate possible actual number of deflection parameters can be determined for each deflection figure. The figure performance of each deflection figure can then be calculated from the actual number of deflection parameters. Together with the current actual performance, this yields the actual performance of the figures. The following outputs (e.g., advertisements) for each of the distraction figures can be optional: power, figure duration %, figure duration-power, actual power. In the third sequence mode 1000 (illustratively a power mode with sequence adjustment), the following parameters can be predefined or can be specified: • optionally the number of repetitions; • the number of deflection patterns for each pass of the deflection sequence; • the irradiation template for each deflection pattern of the deflection sequence; • optionally the pattern mode for each deflection pattern of the deflection sequence; • the pattern power(s) (illustratively, each deflection pattern is assigned an absolute target power); • the point power, i.e., the power for the deflection parameter(s) (for example, power for 10 µs averaged over the sequence duration). The energy budget can define the figure power and / or the point power. The total power is the sum of the figure powers across all deflection figures. The sequence power (e.g., number of deflection parameters) can correspond to the ratio of total power to point power. Further calculations can be performed analogously to the second sequence mode. A fourth sequence mode (figuratively, a power density mode, e.g., for power control of vaporization sources) can be implemented, like the first, second, or third sequence modes. This fourth sequence mode maintains a power density achieved by a deflection pattern invariant for at least one iteration of the deflection sequence. The power density can be specified, for example, as an area power density (i.e., relative to a contour surrounding the irradiated area and / or to a solid angle) or as a line power density, e.g., by means of a scalar power density parameter, where each deflection pattern can be assigned a power density parameter. Power adjustments or changes to other deflection patterns, which, for example, entail a change in the temporal relationships, can be compensated for by changing the pattern size in such a way that the power density of the deflection pattern is maintained.In other words, the fourth sequence mode allows for the transformation of the deflection figure using a similarity transformation, such as a central dilation or central compression (more generally referred to as a scaling transformation). A similarity transformation can intuitively ensure that the trajectory retains its shape. More generally, the similarity transformation can leave the ratios of the distances and angles of the trajectory unchanged, while optionally modifying, for example, the length of the trajectory and / or the area it spans. For applications requiring a specific power density, the power density achieved by irradiation using the deflection pattern can be kept constant in the fourth sequence mode. In the fourth sequence mode, geometric data relating to the deflection parameters (e.g., rectification and figure corrections) can be assigned to a deflection figure. Alternatively or additionally, the deflection figure can be assigned an indication of whether it is a line figure (i.e., having an open trajectory) or a surface figure (i.e., having a closed trajectory). For example, the irradiation template can be configured to irradiate a line or a surface. In the fourth sequence mode, the predefined power density (e.g., spatially and / or temporally averaged) of a deflection figure can be kept constant when the figure's power changes, for example, using the first, second, or third sequence mode and the scaling transformation. Optionally, a direction in which the deflection figure is extended can be specified. Alternatively, the predefined power density of the deflection figure can be kept constant in the case of a scaling transformation of the deflection figure by adjusting the power parameter. A fifth sequence mode among the multiple sequence modes (illustratively, a power density operation with a power density matrix, e.g., for power control of evaporation sources) can be configured, similar to the fourth sequence mode, whereby the fifth sequence mode maintains an invariant direction-dependent power density achieved by means of a deflection pattern. The power density can, for example, be specified as an area power density, e.g., by means of a vectorial (e.g., direction-dependent and / or position-dependent) power density parameter, whereby each deflection pattern can be assigned a power density parameter. In the fifth sequence mode for moving deflection patterns, a power density matrix can be predefined or created. For example, the power density (for at least one selectable deflection pattern) can be assigned to the position of the deflection pattern according to a power density matrix. The power densities at the points of impact in the deflection field of the electron beam can be specified using a matrix that assigns a power density to each point of impact (or, more generally, solid angle element δΩ) in the deflection field. Alternatively or in addition to the points, the matrix can also be composed of defined regions of the deflection field. More generally, a tensor can be used instead of the matrix. In other words, the energy specification can be a tensor. In the fifth sequence mode, the entire deflection pattern can optionally be adjusted according to the power density mode. Alternatively or additionally, adjustments can be made within the deflection pattern by redistributing (e.g., permutation) the deflection parameters. Optionally, each of the multiple sequence modes can have one or more boundary conditions, e.g., that the number of deflection parameters for each deflection figure is greater than zero. Optionally, an unwanted deflection figure can be (e.g., temporarily) removed from the deflection sequence. In response, the performance parameter can be updated. Optionally, the control device 300 can provide the ability to switch between at least two sequence modes from among the multiple sequence modes (e.g., the first to fifth sequence modes). If more than the first to fifth sequence modes are provided, e.g., at least one additional sequence mode (e.g., a pure time mode), a sequence mode from the first to fifth sequence modes can be activated from this additional sequence mode, or vice versa. Fig. 12 illustrates different modes (also called figure modes) of the method 500 according to different embodiments in several diagrams 1201 to 1213. In 1201, a first figure mode can be assigned to a deflection pattern, which specifies that the deflection pattern is completed exactly once for each iteration of the deflection sequence (i.e., P=1). Optionally, the first figure mode can specify that the pattern duration tF, the dwell time tFW, and / or the irradiation template are invariant. Optionally, the first figure mode can specify that after the deflection pattern has been completed, the deflection pattern immediately following the deflection sequence is started. The complete traversal of the deflection pattern can be understood as the fact that both the very first deflection parameter of the deflection pattern and the very last deflection parameter of the deflection pattern are controlled, i.e., converted into the deflection signal, as well as all deflection parameters in between. In 1203, a second figure mode can be assigned to a deflection figure, specifying that the deflection figure is traversed completely multiple times (e.g., P times) for each iteration of the deflection sequence (i.e., P is an integer). The number P (also referred to as frequency P) of repetitions of the deflection figure can be determined, for example, based on a target dwell time tFW, e.g., according to the relation P = tFW / tFund / or rounded. Alternatively, instead of rounding, the figure duration tFf can be adjusted so that it is an integer divisor of the target dwell time tFW. Optionally, the second figure mode can specify that the figure duration tF and / or the irradiation template are invariant. Optionally, the second figure mode can specify that after the deflection figure has been traversed P times (completely), the deflection figure immediately following the deflection sequence is started. In 1205, a third figure mode can be assigned to a deflection pattern, specifying that the deflection pattern is executed at least partially (e.g., the beginning of the deflection pattern) at least once for each iteration of the deflection sequence. Optionally, the third figure mode can specify that the figure duration tFund and / or the irradiation template are invariant. The frequency P of repetitions of the deflection pattern (P can be less than 1, for example) can be determined based on a target dwell time tFW, e.g., according to the relationship P = tFW / tF. Alternatively or additionally, the third figure mode can specify that the deflection pattern immediately following the deflection sequence is started after the target dwell time tFW has elapsed. Optionally, the third figure mode can specify that the very first deflection parameter of the first iteration of the deflection pattern must be applied. In 1207, a fourth figure mode can be assigned to a deflection figure, which specifies that the deflection figure is executed at least partially (e.g., the end of the deflection figure) at least once for each iteration of the deflection sequence. Optionally, the fourth figure mode can specify that the figure duration tFund and / or the irradiation template are invariant. The frequency P of repetitions of the deflection figure (P can be less than 1, for example) can be determined based on a target dwell time tFW, e.g., according to the relationship P = tFW / tF. Alternatively or additionally, the fourth figure mode can specify that the deflection figure immediately following the deflection sequence is started after the target dwell time tFW has elapsed. Optionally, the fourth figure mode can specify that the very last deflection parameter of the P-th iteration of the deflection figure must be addressed and / or that the very last iteration of the deflection figure must be completed. The requirement that the very last iteration of the distraction figure be completed can be defined, for example, via a user query. In other words, it can be specified, at the user's request, that the very last iteration of the distraction figure be completed. Optionally, the character mode in 1205 and / or 1207 can specify, for example via a user query, that P≥1 should be. Visually, 1≥P can be the default, but P≥1 can be set as a boundary condition at the user's request. In 1209, a fifth figure mode can be assigned to a deflection figure, which specifies that the deflection figure is executed completely exactly once for each iteration of the deflection sequence (i.e., P=1). Optionally, the fifth figure mode can specify that the number of deflection parameters of the deflection figure, the dwell time tFWund, or the irradiation template are invariant. The figure duration tF of the deflection figure can be determined in the fifth figure mode based on a target dwell time tFWund or a target figure thickness, for example, by repeatedly activating at least one (i.e., exactly one or more than one) deflection parameter of the deflection figure and / or by adjusting the cycle time t0. Optionally, the fifth figure mode can specify that after the deflection figure has been completed, the deflection figure immediately following the deflection sequence is started. In 1211, a sixth figure mode can be assigned to a deflection figure, specifying that the deflection figure is executed completely exactly once for each iteration of the deflection sequence (i.e., P=1). Optionally, the sixth figure mode can specify that the figure duration, the dwell time tFWund, or the irradiation template are invariant. In the sixth figure mode, the number of deflection parameters of the deflection figure can be determined, for example, based on a target dwell time tFWund or a target figure duration tFert, e.g., by updating the deflection parameters, e.g., by recalculating them (e.g., using extrapolation and / or interpolation). Optionally, the sixth figure mode can specify that after the deflection figure has been completed, the deflection figure immediately following the deflection sequence is started. In 1213, a seventh figure mode can be assigned to a deflection figure, specifying that the deflection figure is executed completely exactly P times for each iteration of the deflection sequence (i.e., P ≥ 1 and an integer, e.g., P ≥ 2). Optionally, the seventh figure mode can specify that the figure duration tA, the dwell time tFWund, or the irradiation template are invariant. In the seventh figure mode, the frequency P of repetitions of the deflection figure can be determined, for example, based on a target dwell time tFWund or a target figure duration tFert, e.g., by updating the deflection parameters (e.g., by extrapolation and / or interpolation). For example, the update can be performed such that the figure duration tFein is an integer divisor of the target dwell time tFW. Optionally, the seventh figure mode can specify that after the deflection figure has been completed, the deflection figure immediately following the deflection sequence is started. In 1213, P≥1 can result in a single pass being allowed, thus enabling short dwell times in this mode. For example, in 1213, P=1 can be set or made available. Optionally, an eighth figure mode can be assigned to a deflection figure. This mode can be configured like the seventh figure mode, except that a rate of change of the electron beam's orientation can be specified. The rate of change of the electron beam's orientation can, for example, represent an angular velocity (e.g., change in deflection angle per unit time δα(t) / δt) and / or a linear velocity (e.g., change in impact location per unit time δP(t) / δt) with which the electron beam is deflected. This velocity (also referred to as beam velocity or alignment velocity) can be understood in this context as the magnitude of the velocity resulting from the ratio of the angular and / or linear distance between two immediately successive deflection parameters and the time required for this distance. Optionally, in the eighth figure mode, adjustments can be made within the deflection figure by redistributing (e.g., permutation) the deflection parameters. For example, approximately as many deflection parameters are used as specified by the irradiation template. Alternatively or additionally, the trajectory can be updated (e.g., using an algorithm), for example, to set a target rate of change (e.g., target beam velocity) within the geometric dimensions defined by the deflection figure. A process can be clearly influenced not only by the beam power but also significantly by the speed at which the electron beam travels. As the beam speed increases, the energy input is shifted towards the surface of the irradiated material, thus affecting its surface temperature. This can be a crucial factor in both substrate pretreatment and the vaporization of a target material. In melting processes, the surface temperature is also decisive for the desired evaporation of impurities or the vaporization (and thus loss) of the material being melted. Optionally, a ninth figure mode can be assigned to a deflection figure, which can be configured like the eighth figure mode, except that the alignment velocity is a vector quantity (e.g., direction-dependent and / or position-dependent). For example, the alignment velocity can be determined and / or provided based on a predefined depth of penetration of the electron beam. Optionally, each deflection figure can be assigned an alignment velocity parameter, which represents the alignment velocity. For example, the orientation velocity can be set to be time-invariant as the system traverses a deflection pattern. Alternatively, the orientation velocity can be a function of exactly one dimension (e.g., distance or angle) or at least two dimensions (e.g., x-deflection and y-deflection), for example, defined by an orientation velocity matrix. Optionally, in the ninth figure mode, the alignment speed can be adjusted (optionally, the number of deflection parameters of the deflection figure can be invariant) by means of at least one of the following: For example, an isotropic scaling transformation of the deflection figure can be performed (for example, the figure size is changed in all dimensions), where optionally a power density of the deflection figure is kept constant. For example, an anisotropic scaling transformation of the deflection figure can be performed (for example, the deflection figure can be invariant in one dimension and / or changed in exactly one other dimension), where optionally a change in the power density of the deflection figure can be performed. For example, a deflection figure can be traversed multiple times in succession (e.g., multiple passes), where optionally a jump length can be adjusted.For example, the trajectory can be adjusted within a given contour (for example, using an algorithm for distributing the deflection parameters). Optionally, in the ninth figure mode, one of the following boundary conditions can be specified: the spatial power distribution in the deflection figure (for example, the path can be placed in the contour of the deflection figure); and / or the alignment speed fulfills a specified criterion (e.g., a speed requirement), exceeds, for example, a specified threshold. Optionally, in the ninth figure mode, the figure power (e.g., number of deflection parameters) of each deflection figure can be defined based on the dwell time tFW. When distributing the deflection parameters according to the contour, the respective spacing of the deflection parameters (also referred to as jump length) can result from the predefined alignment speed. For example, the control device can implement an algorithm configured to find a trajectory that fills the contour (e.g., uniformly and / or according to the original density of impact points). Optionally, when distributing the deflection parameters according to the contour, corresponding changes in direction can be defined in addition to the predefined speed value. These should lie within a predefined range. Optionally, in the ninth figure mode, one of the following pieces of information can be output, e.g., displayed: a value of the mean beam velocity (e.g., its magnitude), a value of the deviation (e.g., standard deviation) from the mean beam velocity; a parameter representing the changes in direction within the deflection figure. Depending on the specific embodiment, more precise and / or optimally adapted setup, control, and / or correction of intended thermal processes can be enabled. For example, various control options are provided for the thermal processes generated by the electron beam. Optionally, the control device 300 can provide that at least two character modes of the multiple character modes (e.g. having the first to ninth character mode) can be switched and / or exactly one character mode is selected from the multiple character modes. Fig. 13 illustrates the method 500 according to various embodiments in comparison to a conventional control system in several diagrams 1301 and 1303. In a conventional control system (compare 1301, also referred to as time mode), the power supply 802 is controlled based on the specified power parameter 704, which provides an electron beam 23 with the electron beam power Φ according to the power parameter 704. Furthermore, the electron beam 23 is deflected based on a figure residence time parameter 619, which specifies the figure residence time tFW for the respective deflection figures. The figure residence times tFW cause a change of state in the "irradiation" system and can therefore be intuitively understood as disturbance variables, each figure residence time tFW influencing the ultimately achieved power budget Φn. In a time mode, the following can be specified: • optionally the number W of repetitions; • the number NF of deflection figures for each pass of the deflection sequence; • the irradiation template for each deflection figure of the deflection sequence; • optionally the figure mode for each deflection figure of the deflection sequence; • for each deflection figure, its number NS of deflection parameters (corresponds to the residence time via the output rate); • the power parameter, which defines the total power of the electron beam gun. The sequence length can be calculated from the sum of the number of deflection parameters. This is displayed along with the resulting time. The percentage of time (corresponding to the percentage of power) can be displayed for each deflection pattern. Additionally, the absolute power, calculated based on the currently specified target power, can be displayed. If the number of deflection parameters changes, the new pattern with the new point count is immediately calculated based on the current pattern mode. This allows for the smallest possible step size. The total power of the electron beam gun is redistributed among the deflection patterns according to the number of deflection parameters. According to method 500 (see 1303), the figure residence time parameter 619 is fed back by means of the control device 300, which determines the power parameter 704 based on a target power budget 617 (i.e., the target proportion of the electron beam power Φ assigned to each section of the deflection sequence). More generally, alternatively or additionally to the figure residence time parameter 619, a parameter 615 can also be specified, which represents at least one of the following parameters of the sequence section or the entire deflection sequence: the number of deflection parameters; and / or the duration (e.g., figure duration, residence time, or sequence duration). If the sequence section has a deflection figure that is traversed multiple times, a parameter representing the frequency P with which the sequence section is repeated can also be specified, either alternatively or additionally. Alternatively or additionally to the power budget 617 (Φn) the energy budget 617 (EB) can be used, which represent each other and / or are linked via the sequence duration tA (e.g. Φn=EB / tA). The following are various examples that refer to what has been described previously and depicted in the figures. Example 1 is a method 500 for providing an electron beam 23, comprising the method 500: optionally transporting 509 a substrate in an irradiation area (e.g., vacuum area); irradiating 501 the substrate or an evaporation material with which the substrate is to be coated, by means of an electron beam 23, wherein a deflection sequence is repeatedly performed according to which the electron beam 23 is deflected, the electron beam 23 being provided according to a power parameter 704, which represents a target beam power of the electron beam 23; for each section of the deflection sequence, setting 503 a first specification, which represents an energy budget and / or power budget related to the section (e.g., for each iteration of the deflection sequence); determining 505 a beam power based on the first specification; and during irradiation (e.g.,(of evaporation), updating 507 of the power parameter 704 based on the determined beam power. Example 2 is a method 500 for providing an electron beam 23, comprising the method 500: optionally transporting 509 and / or holding a workpiece, e.g., in an irradiation area; irradiating 501 the workpiece with an electron beam 23, wherein a deflection sequence is repeatedly performed, according to which the electron beam 23 is deflected, the electron beam 23 being provided according to a power parameter 704, which represents a target beam power of the electron beam 23; for each section of the deflection sequence, setting 503 a first specification, which represents an energy budget and / or power budget related to the section (e.g., for each iteration of the deflection sequence); determining 505 a beam power based on the first specification; and during irradiation (e.g., vaporization), updating 507 the power parameter 704 based on the determined beam power. Example 3 is a process 500 according to Example 2, wherein the workpiece has a substrate to be coated and / or a target material (e.g. a material to be evaporated and / or a material to be melted) whose state of matter is to be changed. Example 4 is a process 500 according to Example 3, wherein the target material is converted into a liquid state (e.g. melted) and / or into a gaseous state (e.g. sublimated and / or evaporated) by means of the electron beam. Example 5 is a process 500 according to Example 4, wherein the substrate is coated with the target material, which is in the gaseous state of matter. Example 6 is a method 500 for providing an electron beam 23, comprising the method 500: repeatedly performing 501 a deflection sequence according to which the electron beam 23 is deflected, wherein the electron beam 23 is provided according to a power parameter 704, which represents a target beam power of the electron beam 23; for each section of the deflection sequence, setting 503 a first specification, which represents an energy budget and / or power budget related to the section (e.g., for each iteration of the deflection sequence); determining 505 a beam power based on the first specification; and during irradiation (e.g., vaporization), updating the power parameter 704 based on the determined beam power. Example 7 is a method 500 for providing an electron beam 23, comprising the method 500: deflecting 501 an electron beam 23 into an irradiation region (e.g. a vacuum region), wherein a workpiece is arranged in the irradiation region (e.g. a substrate is transported or an evaporation material is arranged with which the substrate is to be coated); wherein the electron beam 23 is provided according to a power parameter 704, which represents a target beam power of the electron beam 23; for each section of the irradiation region (e.g.vacuum range), setting 503 a first specification which represents an energy budget and / or power budget related to the section; determining 505 a beam power based on the first specification; and during deflection, updating 507 the power parameter 704 based on the determined beam power; wherein, for example, the workpiece is irradiated by means of the deflected electron beam. Example 8 is a process 500 according to Example 7, wherein the workpiece has a substrate to be coated and / or a target material (e.g. a material to be evaporated and / or a material to be melted) whose state of matter is to be changed. Example 9 is a process 500 according to Example 8, wherein the target material is converted into a liquid state (e.g. melted) and / or into a gaseous state (e.g. sublimated and / or evaporated) by means of the electron beam. Example 10 is a process 500 according to Example 9, wherein the substrate is coated with the target material, which is in the gaseous state of matter. Example 11 is a method 500 for providing a predefined direction-dependent radiation intensity, comprising the method 500: deflecting 501 the electron beam 23 according to a deflection sequence, wherein the deflection sequence is repeated several times and represents a time-dependent deflection of the electron beam 23, and the electron beam 23 is provided according to a power parameter 704, which represents a target beam power of the electron beam 23; setting 503 a first specification, which represents a distribution of the predefined direction-dependent radiation intensity based on the deflection sequence (e.g., section-related); determining a beam power based on the first specification; and during repeated deflections, updating the power parameter 704 based on the determined beam power. Example 12 is a method 500 according to one of Examples 1 to 11, wherein the deflection sequence has a sequence of several deflection parameters which represent a time-dependent target deflection of the electron beam 23. Example 13 is a method 500 according to one of Examples 1 to 12, wherein at least one (e.g. exactly one, more than one or each) section of the deflection sequence (e.g. referenced by means of an index n and / or having several deflection parameters) is assigned an (e.g. nth) component of the first specification, wherein the component specifies the energy budget related to the section. Example 14 is a method 500 according to one of Examples 1 to 13, wherein the first specification has several components, each of which is assigned to a section of the deflection sequence and specifies the energy budget related to the assigned section. Example 15 is a Method 500 according to one of Examples 1 to 14, wherein at least one (e.g., exactly one, more than one, or each) section of the deflection sequence has exactly one deflection parameter of the deflection sequence; and wherein the first specification is a scalar quantity (e.g., a value) and / or identical for each section of the deflection sequence, e.g., specifying an identical energy budget or power budget. Example 16 is a method 500 according to one of Examples 1 to 15, wherein the first specification for each section of the deflection sequence represents an identical energy budget or power budget to be transferred by means of the electron beam 23 for each iteration of the deflection sequence. Example 17 is a method 500 according to one of Examples 1 to 16, wherein at least one (e.g. exactly one, more than one or each) section of the deflection sequence has multiple deflection parameters of the deflection sequence (then the section can also be called a deflection figure). Example 18 is a method 500 according to one of Examples 1 to 17, wherein at least one section of the deflection sequence is traversed more than once in at least one iteration of the deflection sequence, e.g. repeated several times in at least one iteration of the deflection sequence. Example 19 is a method 500 according to one of Examples 1 to 18, further comprising: providing an accelerating voltage for the electron beam 23 based on the power parameter 704; and / or providing a cathode current based on the power parameter 704. Example 20 is a method 500 according to one of Examples 1 to 19, wherein the performance parameter 704 is invariant (e.g. time-invariant) for the duration of at least one iteration of the deflection sequence. Example 21 is a method 500 according to one of Examples 1 to 20, wherein, for each section of the deflection sequence, the electron beam power Φ, the energy budget EB related to the section and a duration tF / 0 of the section satisfy the following relation: EB=Φ·tF / 0. Example 22 is a method 500 according to one of Examples 1 to 21, wherein, for each section of the deflection sequence, a section-related power Φn to be transferred by means of the electron beam 23 for at least one pass of the deflection sequence (also called power budget), and a duration tA of the deflection sequence satisfy the following relation: Φn=EB / tA. Example 23 is a method 500 according to one of Examples 1 to 22, wherein, for each section of the deflection sequence, the section-related power budget Φn, the electron beam power Φ, the duration tF / 0 of the section and a duration tAder of the deflection sequence satisfy the following relation: Example 24 is a method 500 (e.g., in the first sequence mode) according to one of Examples 1 to 23, further comprising: for each section of the deflection sequence, specifying a second specification which represents at least one of the following parameters of the section: a number of deflection parameters, a frequency with which the section is traversed (e.g., repeated), and / or a duration; wherein the determination of the beam power is additionally based on the second specification. Example 25 is a procedure 500 (e.g. in the first sequence mode) according to Example 24, further comprising: updating the number of deflection parameters of at least one iteration of the deflection sequence section based on the second specification. Example 26 is a method 500 (e.g. in the second sequence mode) according to one of Examples 1 to 25, further comprising: specifying a third specification which represents at least one of the following parameters of the deflection sequence: a number of deflection parameters and / or a duration; wherein the determination of a beam power is additionally based on the third specification. Example 27 is a procedure 500 (e.g. according to the second and / or third sequence mode) according to one of Examples 23 to 26, further comprising: for each section of the deflection sequence, updating a number of deflection parameters of the section and / or the deflection sequence based on the first specification and / or the third specification. Example 28 is a procedure 500 (e.g., in the third sequence mode) according to one of Examples 1 to 27, wherein at least one (e.g., exactly one, more than one, or each) section of the deflection sequence has multiple deflection parameters, wherein the first specification has: a (e.g., scalar) first component representing the energy budget or power budget related to the section of the deflection sequence, and a (e.g., scalar) second component representing the energy budget or power budget related to all deflection parameters of the deflection sequence, wherein, for example, the energy budget or power budget related to all deflection parameters of the deflection sequence is identical for all deflection parameters. Example 29 is a method 500 according to one of Examples 1 to 28, wherein the first specification represents the radiation intensity related to the section of the deflection sequence, wherein optionally the radiation intensity has a directional dependence, e.g. an exactly one-dimensional or an exactly two-dimensional directional dependence. Example 30 is a method 500 according to one of Examples 1 to 29, wherein the deflection sequence defines a direction-dependent radiation intensity for each iteration of the deflection sequence; wherein the first specification defines the radiation intensity for a solid angle range in which the section maps the electron beam 23. Example 31 is a method 500 according to one of Examples 1 to 30, wherein the first specification represents a spatial distribution of the energy density or power density, where optionally the distribution has a directional dependence, e.g. an exactly one-dimensional or an exactly two-dimensional directional dependence. Example 32 is a method 500 according to any one of Examples 1 to 31, wherein the update features maintaining at least one (i.e., exactly one or more than one, e.g., each) of the following parameters of at least one (i.e., exactly one or more than one, e.g., each) section of the deflection sequence (e.g., this may be invariant with respect to the update), e.g., leaving unchanged: a frequency with which the section is fully traversed in each iteration of the deflection sequence; the very first deflection parameter of the section that is targeted within that section and / or after a preceding (different from) section; the very last deflection parameter of the section that is targeted within that section and / or before a subsequent (different from) section. Example 33 is a procedure 500 according to one of Examples 1 to 32, where the frequency is exactly one. Example 34 is a method 500 according to one of Examples 1 to 33, wherein the first specification indicates what proportion of the beam power is to be distributed over the section of the deflection sequence. Example 33 is a process 500 according to one of Examples 1 to 32, wherein the workpiece is irradiated using the deflected electron beam, and the irradiation of the workpiece causes an irreversible change to the workpiece, e.g., on a chemical and / or physical level. If the workpiece is already subject to an irreversible change (also referred to as native change or aging) caused by time or other circumstances (e.g., environmental conditions), this change may be or become accelerated by the electron beam. Example 35 is a method 500 according to one of examples 1 to 34, where the power parameter 704 represents a target beam power of the electron beam 23 (e.g. time-invariant via the deflection sequence). Example 36 is a method 500 according to one of Examples 1 to 35, wherein the performance parameter 704 is the same for all deflection parameters and / or sections of the deflection sequence. Example 37 is a method 500 according to one of Examples 1 to 36, wherein the deflection sequence defines a spatial distribution with which a beam power of the electron beam 23 is mapped. Example 38 is a method 500 according to one of Examples 1 to 37, further comprising: providing data representing a direction-dependent radiation intensity to be transmitted by means of the electron beam 23; forming and / or updating the deflection sequence and the power parameter 704 based on the data and optionally based on the first, second and / or third specification. Example 39 is a method 500 according to one of Examples 1 to 38, wherein at least one section of the deflection sequence is repeated several times for each iteration of the deflection sequence. Example 40 is an electron beam gun comprising: an electron beam source 112q; a deflection unit 308 for deflecting the electron beam 23, and a control device 300 which is configured to control the deflection unit 308 according to the method 500 according to any one of Examples 1 to 39. Example 41 is a control device 300 for an electron beam 23, the control device comprising: a signal generator 302, which is configured to provide a deflection signal based on a deflection sequence according to which the electron beam 23 is to be deflected; a first circuit 324, which is configured to provide a target beam power of the electron beam 23 according to a power parameter 704; a second circuit 326, which is configured to determine a beam power based on a specification, wherein the specification for each section of the deflection sequence represents an energy budget related to that section; wherein the second circuit 326 is further configured to update the power parameter 704 based on the determined beam power. Example 42 is the control device 300 according to Example 41, wherein the second circuit implements a virtual user interface which prompts for input of the specification. Example 43 is the control device 300 according to Example 41 or 42, wherein the first circuit and / or the second circuit are further configured to carry out the method 500 according to one of Examples 1 to 39. Example 44 is a non-volatile, computer-readable medium which contains code segments which, when executed by one or more processors, perform the procedure 500 according to any one of Examples 1 to 39. Example 45 is a processor configured to perform procedure 500 according to any one of Examples 1 to 39.

Claims

Method (500) for providing an electron beam (23), comprising the method (500): • irradiating (501) a workpiece with an electron beam (23), wherein a deflection sequence is repeatedly performed according to which the electron beam (23) is deflected; • wherein the electron beam (23) is provided according to a power parameter (704) which represents a target beam power of the electron beam (23); • for each section of the deflection sequence, setting an initial target value, which represents an energy budget related to the section; • determining a beam power based on the initial target value; and • during irradiation (501), updating the power parameter (704) based on the determined beam power. Method (500) according to claim 1, wherein the deflection sequence comprises a sequence of several deflection parameters which represent a time-dependent target deflection of the electron beam (23). Method (500) according to one of claims 1 or 2, wherein at least one section of the deflection sequence has exactly one deflection parameter of the deflection sequence; and wherein the first parameter is a scalar quantity and / or identical for each section of the deflection sequence. Method (500) according to one of claims 1 or 3, wherein at least one section of the deflection sequence has multiple deflection parameters of the deflection sequence. Method (500) according to one of claims 1 or 4, wherein at least one section of the deflection sequence is assigned a component of the first specification, the component specifying the energy budget related to the section. Method (500) according to one of claims 1 or 5, wherein at least one section of the deflection sequence is repeated several times for each iteration of the deflection sequence. Method (500) according to one of claims 1 to 6, providing an accelerating voltage for the electron beam (23) based on the power parameter (704). Method (500) according to any one of claims 1 to 7, wherein the performance parameter (704) is invariant for the duration of at least one iteration of the deflection sequence. Method (500) according to any one of claims 1 to 8, further comprising: for each section of the deflection sequence, specifying a second specification which represents at least one of the following parameters of the section: • a number of deflection parameters; • a frequency with which the section is repeated; and / or • a duration; wherein the determination of the beam power is additionally carried out on the basis of the second specification. Method (500) according to any one of claims 1 to 9, further comprising: defining a third specification which represents at least one of the following parameters of the deflection sequence: • a number of deflection parameters and / or • a duration; wherein the determination of a beam power is additionally based on the third specification. Method (500) according to claim 9 or 10, for each section of the deflection sequence, updating a number of deflection parameters of the section and / or the deflection sequence based on the first specification and / or the third specification. Method (500) according to any one of claims 1 to 11, wherein at least one section of the deflection sequence has several deflection parameters, wherein the first specification has: • a first component representing the energy budget related to the section of the deflection sequence, and • a second component representing the energy budget related to all deflection parameters of the deflection sequence. Method (500) according to any one of claims 1 to 12, wherein the updating comprises maintaining at least one of the following parameters of at least one section of the deflection sequence: • a frequency with which the section is completely traversed in each iteration of the deflection sequence; • the very first deflection parameter of the section that is triggered within this section and / or after a preceding section; • the very last deflection parameter of the section that is triggered within this section and / or before a subsequent section. Method (500) according to claim 13, wherein the frequency is exactly one. Method (500) according to one of claims 1 or 14, wherein the irradiation of the workpiece causes an irreversible change to the workpiece. Method (500) for providing an electron beam (23), comprising the method (500): • deflecting (501) an electron beam (23) into an irradiation area, • wherein a workpiece to be irradiated is arranged in the irradiation area; • wherein the electron beam (23) is provided according to a power parameter (704) which represents a target beam power of the electron beam (23); • for each section of the irradiation area, setting (503) a first setpoint which represents an energy budget related to the section; • determining (505) a beam power based on the first setpoint; and • during deflection, updating (507) the power parameter (704) based on the determined beam power. Electron beam gun (112) comprising: • an electron beam source (112q) for providing an electron beam (23); • a deflection unit (308) for deflecting the electron beam (23); and • and a control device (300) which is configured to control the deflection unit (308) according to the method (500) according to any one of claims 1 to 16. Non-volatile, computer-readable medium comprising code segments which, when executed by one or more than one processor, perform the method (500) according to any one of claims 1 to 16. Processor which is configured to perform the method (500) according to any one of claims 1 to 16. Control device (300) for an electron beam (23), comprising: • a signal generator (302) configured to provide a deflection signal based on a deflection sequence according to which the electron beam (23) is to be deflected; • a first circuit (324) configured to provide a target beam power of the electron beam (23) according to a power parameter (704); • a second circuit (326) configured to determine a beam power based on a specification, wherein the specification for each section of the deflection sequence represents an energy budget related to that section; • wherein the second circuit (326) is further configured to update the power parameter (704) based on the determined beam power.

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