HOUSING FOR A RADIANT-EMPLOYING COMPONENT, METHOD FOR MANUFACTURING A RADIANT-EMPLOYING COMPONENT AND RADIANT-EMPLOYING COMPONENT

Abstract

Housing (1) for a radiation-emitting component comprising: - two electrical contact points (8) arranged directly next to each other on a first main surface (6) of the housing (1), - two recesses (7) on the first main surface (6) of the housing (1), wherein one of the recesses (7) is arranged next to each electrical contact point (8), and - an H-shaped spacer (10) comprising two longitudinal webs (11) in the top view of the housing (1), between which a transverse web (12) is arranged, wherein - the crossbar (12) runs between the two electrical contact points (8).

Description

[0001] A housing for a radiation-emitting component, a method for manufacturing a radiation-emitting component, and a radiation-emitting component are described.

[0002] The aim is to provide a housing for a radiation-emitting device that enables increased efficiency. Furthermore, a simplified method for manufacturing a radiation-emitting device with increased efficiency and a radiation-emitting device with increased efficiency are to be described.

[0003] The invention is defined by the claims.

[0004] Housings for radiation-emitting components are known from the publications DE 10 2018 118 697 A1, DE 10 2013 224 581 A1, DE 10 2010 032 512 A1 and DE 10 2013 205 894 A1.

[0005] Advantageous embodiments and further developments of the housing, the method and the radiation-emitting component are the subject of the respective dependent claims.

[0006] According to a further embodiment, the housing comprises at least one electrical contact point arranged on a first main surface of the housing. The electrical contact point is configured to be electrically connected to the electrical contact of a semiconductor chip, for example, a radiation-emitting semiconductor chip. Preferably, the electrical contact point of the housing is configured to be mechanically stable and electrically conductively connected to the electrical contact of the semiconductor chip by soldering. In particular, a contact surface of the electrical contact point is preferably designed to be solderable.

[0007] According to a further embodiment, the housing comprises at least one recess in the first main surface, which is arranged next to the electrical contact point. Preferably, the recess is designed as a trough having a bottom surface that runs parallel to a mounting surface of the housing, either partially or across its entire bottom surface.

[0008] According to one embodiment of the housing, the first main surface is surrounded by side walls in a frame-like manner, forming a cavity, with the first main surface of the housing forming or encompassing a bottom surface of the cavity. Preferably, the side walls are continuous and form a closed frame, for example, with a rectangular shape. Preferably, the electrical contact point is arranged adjacent to one of the side walls. If the side walls are rectangular, the housing typically comprises four side walls. Two side walls are positioned opposite each other.

[0009] Preferably, the inner surfaces of the side walls are arranged at an angle to the bottom surface of the cavity. In this way, the inner surfaces of the side walls act as a reflector for electromagnetic radiation from a radiation-emitting semiconductor chip located in the cavity.

[0010] According to the invention, the housing comprises two electrical contact points arranged directly adjacent to each other on the first main surface of the housing. The term "directly adjacent to each other" means, in particular, that there is no recess between the two electrical contact points. However, the two electrical contact points are generally spaced apart from each other. In addition, the two electrical contact points are separated from each other by a transverse rib of an H-shaped spacer, which is described in detail below.

[0011] It is possible for the housing to have any number of electrical contact points, for example, two or more. For the sake of simplicity, features and embodiments are often described here only for one electrical contact point. Such embodiments and features can be present at all electrical contact points of the housing.

[0012] If the housing comprises two electrical contact points arranged directly adjacent to each other on the first main surface of the housing, the housing preferably further comprises two recesses on the first main surface of the housing. Preferably, one recess is arranged next to each electrical contact point. In particular, the two electrical contact points are preferably arranged centrally on the first main surface of the housing. If the housing comprises a cavity surrounded by side walls in a frame-like manner, with the first main surface forming the bottom surface of the cavity, each recess preferably borders a side wall, which are preferably opposite each other.

[0013] It is possible for the housing to have any number of recesses, for example, two or more. For the sake of simplicity, features and embodiments are often described here for only one recess. Such embodiments and features can be present in all recesses of the housing.

[0014] According to a further embodiment, the housing has a main direction of extension. The recesses preferably border two opposite side walls, each of which runs transversely to the main direction of extension of the housing.

[0015] According to a further embodiment of the housing, a bottom surface of the recess is arranged vertically spaced from a contact surface of the electrical contact point. The term "vertically spaced" specifically means that the bottom surface of the recess has a distance in a vertical direction from the contact surface of the electrical contact point. This vertical direction is perpendicular to the mounting surface of the housing.

[0016] For example, the distance between the bottom surface of the depression and the contact surface of the electrical contact point is between 20 micrometers and 200 micrometers including inclusive, and in particular approximately 50 micrometers.

[0017] According to the invention, the housing comprises an H-shaped spacer with two longitudinal ribs, between which a transverse rib is arranged. In other words, the longitudinal ribs and the transverse rib form the shape of the letter H. The transverse rib preferably extends between the two electrical contact points. If the housing comprises a cavity that is surrounded by side walls in a frame-like manner, with the first main surface forming the bottom surface of the cavity, then the longitudinal ribs particularly preferably extend along opposite side walls of the housing.

[0018] According to another embodiment of the housing, a gap is formed between the transverse web and the longitudinal web of the H-shaped spacer. Preferably, the transverse web and the longitudinal web are completely separated from each other by this gap.

[0019] According to a further embodiment, the housing comprises a housing body and a conductor frame. The conductor frame is preferably embedded in the housing body, with at least the contact surface of the electrical contact point exposed on the first main surface of the housing. For example, the housing body is formed by molding from a housing material such as an epoxy mold compound (EMC).

[0020] The conductor frame preferably comprises or is made of a metal. For example, the conductor frame comprises or is made of copper. Particularly preferably, the conductor frame comprises a core made of copper and provided with a coating. The coating preferably comprises or is made of silver.

[0021] According to another embodiment of the housing, the recess is formed in the housing body. It is also possible for the recess to be formed in the ladder frame.

[0022] According to another embodiment of the housing, the electrical contact point is part of the conductor frame. Particularly preferably, the electrical contact point is connected to the rest of the conductor frame by a hinged link, the hinged link having a smaller thickness than the electrical contact point. For example, the hinged link has a thickness between 0.3 and 0.7 times the thickness of the electrical contact point. The hinged link has the advantage of providing thermomechanical stress relief to the radiation-emitting semiconductor chip mounted on the electrical contact point.Particularly in the case of cyclic thermal loads on the finished radiation-emitting component, the outer part of the guide frame is advantageously largely mechanically decoupled from the electrical contact points by the hinged webs, so that only a small amount of mechanical stress is transferred to the electrical contact points of the radiation-emitting semiconductor chip.

[0023] Preferably, the contact surface of the electrical contact point is limited by the housing body, particularly preferably all around. For example, a surface of the housing body is flush with the contact surfaces. The housing body encloses the contact surfaces, for example, in a lateral direction. The lateral direction is perpendicular to the vertical direction.

[0024] The contact surface of the electrical contact point is particularly preferably designed to be mechanically stable and electrically conductively connected to the electrical contact of a radiation-emitting semiconductor chip by means of a solder. If the contact surface of the electrical contact point is limited by the housing body, molten solder preferably remains on the contact surfaces during the soldering process due to the different wetting properties of the housing body and the contact surface. This advantageously leads to a robust soldering process.

[0025] According to a further embodiment of the housing, the conductor frame has an external electrical connection point that is exposed on the mounting surface of the housing and has a recess located on an edge of the housing. This edge defines the mounting surface of the housing. The recess on the edge of the housing advantageously allows for better control of the soldering process for attaching the external electrical connection point to another element, such as a terminal block.

[0026] The housing described here is suitable for use in a process for manufacturing a radiation-emitting component. Features and embodiments described herein only in connection with the housing can also be incorporated into the process itself, and vice versa.

[0027] According to one embodiment of the method for manufacturing a radiation-emitting component, a housing is provided as already described.

[0028] According to a further embodiment of the method, a radiation-emitting semiconductor chip is attached to the electrical contact point. During operation, the radiation-emitting semiconductor chip emits electromagnetic radiation of a first wavelength range from a radiation-emitting surface. For example, the radiation-emitting semiconductor chip is a light-emitting diode chip.

[0029] According to a further embodiment of the method, a liquid reflective potting compound is introduced into the recess so that the liquid reflective potting compound flows from the recess under the radiation-emitting semiconductor chip. Preferably, the liquid reflective potting compound is diffusely reflective. The term "diffusely reflective" means, in particular, that, in contrast to a specularly reflective element, the diffusely reflective element reflects incident electromagnetic radiation in many different spatial directions and not just in a few.

[0030] For example, the liquid diffusely reflective potting compound comprises a resin, such as a silicone, into which diffusely reflective particles are incorporated. These diffusely reflective particles are, for example, titanium dioxide particles. The liquid diffusely reflective potting compound preferably appears white.

[0031] According to a preferred embodiment of the method, a rear main surface of the radiation-emitting semiconductor chip projects beyond the recesses. This allows the liquid reflective potting compound to flow particularly well under the semiconductor chip. As the liquid reflective potting compound flows under the radiation-emitting semiconductor chip, the level of the liquid reflective potting compound in the recess typically decreases, thus reducing the wetting angle of the liquid reflective potting compound on the side surfaces of the radiation-emitting semiconductor chip. With a decreasing wetting angle, the tendency of the liquid reflective potting compound to wet the side surfaces of the radiation-emitting semiconductor chip also decreases.

[0032] According to a particularly preferred embodiment of the method, the liquid reflective potting compound flows from the recess under the radiation-emitting semiconductor chip due to capillary forces. The liquid reflective potting compound preferably fills the recess completely after being introduced. For example, the liquid reflective potting compound is introduced into the recess by dispensing. In this process, for instance, a droplet forms within the recess.

[0033] The liquid reflective potting compound in one recess preferably serves as a reservoir for filling the first main surface of the housing. Starting from the recess on the first main surface, the liquid reflective potting compound wets the area below the radiation-emitting semiconductor chip, flows around the electrical contacts, and spreads further to the opposite recess. If the housing comprises a cavity surrounded by side walls in a frame-like manner, with the first main surface forming the bottom surface of the cavity, then the inner surfaces of the cavity's side walls are also typically wetted by the liquid reflective potting compound up to a certain height.

[0034] It is particularly preferred that the radiation-emitting semiconductor chip is attached to the electrical contact point before the liquid reflective potting compound is introduced into the recess of the housing.

[0035] According to one embodiment of the method, the housing has two electrical contact points arranged directly adjacent to each other on the first main surface of the housing. The housing also preferably has two recesses in the first main surface, with each recess being located next to an electrical contact point. If the housing encompasses a cavity surrounded by side walls in a frame-like manner, with the first main surface forming the bottom surface of the cavity, each recess preferably borders a side wall.

[0036] In this embodiment of the method, the radiation-emitting semiconductor chip is particularly preferably designed as a flip chip. A flip chip typically has a substrate with a first main surface onto which a sequence of semiconductor layers with a radiation-generating active zone is epitaxially grown or transferred. The semiconductor layer sequence is based, for example, on an arsenide or a phosphide compound semiconductor material. Arsenide compound semiconductor materials are compound semiconductor materials that contain arsenic, such as the materials from the system In x Al y Ga 1-x-y As with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x+y ≤ 1, while phosphide compound semiconductor materials are compound semiconductor materials that contain phosphorus, such as the materials from the system In x Al y Ga 1-x-y P with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x+y ≤ 1.

[0037] Preferably, the semiconductor layer sequence is based on a nitride compound semiconductor material. Nitride compound semiconductor materials are compound semiconductor materials containing nitrogen, such as the materials from the system In x Al y Ga 1-x-y N with 0 ≤ x ≤ 1, 0 ≤ y ≤ 1 and x+y ≤ 1.

[0038] The substrate is generally transparent, at least to the electromagnetic radiation generated in the active region. For example, the substrate comprises or is made of one of the following materials: sapphire, silicon carbide. The substrate has a second main surface opposite the first main surface. The second main surface of the substrate typically forms part of the radiation emission surface of the semiconductor chip. Furthermore, the side surfaces of the substrate also typically form part of the radiation emission surface of the flip chip. Two electrical contacts are generally arranged on the rear main surface of the flip chip for electrical contacting. The rear main surface of the flip chip is particularly preferably mirrored.

[0039] The flip chip is preferably attached to the electrical contact points of the housing using its two electrical contacts, for example by soldering.

[0040] When a housing with two electrical contact points and two recesses is used in combination with a flip chip, this embodiment of the method is characterized in particular by the fact that the liquid reflective potting compound flows from the recess into which it is placed under the flip chip to the opposite recess. The side surfaces of the flip chip generally remain free of the liquid reflective potting compound, so that the efficiency of the finished radiation-emitting component is not reduced due to back reflections.

[0041] The recesses on the first main surface of the housing make it advantageous to easily fill the entire cavity to a certain fill level with the liquid reflective potting compound. Furthermore, a comparatively thick layer of liquid reflective potting compound forms, particularly in the area of ​​the recesses, which advantageously increases the efficiency of the finished radiation-emitting component.

[0042] According to a preferred embodiment of the method, the crossbar of the H-shaped spacer has rounded corners. This allows the liquid reflective potting compound to flow more easily under the semiconductor chip.

[0043] Rounded edges of the recess are particularly preferred. This also makes it easier for the liquid reflective potting compound to flow under the semiconductor chip.

[0044] According to a particularly preferred embodiment, the liquid reflective potting compound is cured to form a solid potting. If the liquid reflective potting compound is a liquid diffusely reflective potting compound, then the solid potting compound will also be a diffusely reflective potting compound. This process step can be the final process step.

[0045] The described method can be used to manufacture a radiation-emitting component. The embodiments and features described in connection with the method can also be present in the radiation-emitting component, and vice versa.

[0046] According to one embodiment, the housing comprises at least one electrical contact point arranged on a first main surface of the housing, and at least one recess in the first main surface of the housing. The recess is arranged next to the electrical contact point.

[0047] According to a further embodiment, the radiation-emitting component comprises a radiation-emitting semiconductor chip with an electrical contact that is applied to the electrical contact point of the housing. Preferably, the electrical contact is electrically conductive and mechanically stable when attached to the electrical contact by means of solder. Preferably, the radiation-emitting semiconductor chip is a flip chip.

[0048] The electrical contact point of the housing is preferably located in the center of the first main surface of the housing. Accordingly, the radiation-emitting semiconductor chip is particularly preferably arranged centrally on the first main surface of the housing.

[0049] A rear main surface of the radiation-emitting semiconductor chip preferably protrudes beyond the recess.

[0050] According to a further embodiment, the radiation-emitting component comprises a potting compound arranged beneath the radiation-emitting semiconductor chip and within the recess. The potting compound is particularly preferably a diffusely reflective compound. This diffusely reflective compound is preferably a silicone containing titanium dioxide particles. The potting compound preferably forms a thickness of between 20 and 1000 micrometers on the bottom surface of the recess.

[0051] According to one embodiment of the radiation-emitting component, the housing comprises a cavity surrounded by side walls in a frame-like manner. It is particularly preferred that a bottom surface of the housing cavity is completely covered with the potting compound.

[0052] According to another embodiment of the radiation-emitting component, the potting extends to a rear main surface of the radiation-emitting semiconductor chip.

[0053] According to a preferred embodiment of the radiation-emitting component, the housing comprises an H-shaped spacer with two longitudinal ribs, between which a transverse rib is arranged. The transverse rib preferably extends between the two electrical contact points. In this embodiment of the radiation-emitting component, the radiation-emitting semiconductor chip preferably rests with one of its rear surfaces on at least one longitudinal rib and / or the transverse rib. In this way, the semiconductor chip can be particularly well mounted at a defined distance from the electrical contact point.

[0054] A gap is particularly advantageously formed between the transverse and longitudinal webs of the H-shaped spacer. This gap acts as a vent when the liquid reflective potting compound is introduced and flows around the radiation-emitting semiconductor chip, thus minimizing air bubbles in the potting compound. Furthermore, the reflective potting compound can flow particularly well from one side of the semiconductor chip, underneath it, to the other side.

[0055] According to a further embodiment, the radiation-emitting component comprises a conversion element that converts electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range that differs from the first. An outer surface of the conversion element is particularly preferably flush with the housing, so that a flat surface is formed opposite the mounting surface of the radiation-emitting component. The conversion element is, for example, arranged in the cavity. For example, the conversion element completely fills the cavity. For example, the conversion element comprises a potting compound, such as a silicone, into which phosphor particles are incorporated.

[0056] The housing, the method for manufacturing the radiation-emitting component, and the radiation-emitting component are based in particular on the idea described below.

[0057] The reflective potting compound on the first main surface of the package increases the efficiency of the radiation-emitting component, since the reflective potting compound typically reflects significantly more electromagnetic radiation from the semiconductor chip than metal surfaces of the conductor frame or the surfaces of package materials from which the package body is usually formed.

[0058] In particular, the use of the described housing with the recess in the described method makes it advantageous to easily encapsulate the bottom edges of the side walls surrounding the cavity, the areas beneath the radiation-emitting semiconductor chip, and the areas at the edges of the radiation-emitting semiconductor chip, thus increasing the efficiency of the finished radiation-emitting device. Encapsulating the bottom edges of the side walls surrounding the cavity is often necessary because these edges have metallic areas that are required when forming the conductor frame with the housing body but can reduce the efficiency of the radiation-emitting device.

[0059] The recess on the first main surface of the housing allows for a comparatively thick layer of reflective potting compound to be applied to this surface. This recess also has the further advantage that, when the liquid reflective potting compound is applied, the side surfaces of the radiation-emitting semiconductor chip are only minimally or not at all wetted by the compound.

[0060] Furthermore, when using a housing without a recess in the first main surface, the liquid reflective potting compound usually runs upwards on the side surfaces of the semiconductor chip, resulting in reduced efficiency of the radiation-emitting component due to back reflections in the radiation-emitting semiconductor chip.

[0061] The radiation-emitting component is used, for example, in automotive applications and display backlighting.

[0062] Further advantageous embodiments and developments of the housing, the method for manufacturing a radiation-emitting component and the radiation-emitting component result from the exemplary embodiments described below in conjunction with the figures.

[0063] Based on the schematic representations of the Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6 to Fig. Section 7 describes in more detail a housing according to an exemplary embodiment.

[0064] Based on the schematic sectional views of the Fig. 8, Fig. 9, Fig. 10, Fig. 11, Fig. 12 to Fig. 13 describes in more detail a method for manufacturing a radiation-emitting component according to an exemplary embodiment.

[0065] The schematic representations of Fig. 14 and Fig. Figure 15 shows a radiation-emitting component according to an exemplary embodiment.

[0066] The schematic representations of Fig. 16 and Fig. Figure 17 shows a radiation-emitting component according to a further embodiment.

[0067] Identical, similar, or similarly functioning elements are marked with the same reference symbols in the figures. The figures and the relative sizes of the elements depicted within them are not necessarily to scale. Rather, individual elements, particularly layer thicknesses, may be exaggerated for clarity and / or better understanding.

[0068] The housing 1 according to the exemplary embodiment of the Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6 to Fig. 7 has a housing body 2 in which a conductor frame 3 is embedded. The housing body 2 is, for example, made of an epoxy molding compound, while the conductor frame 3 is made of a metal.

[0069] The housing 1 has a first main surface 6 in which two recesses 7 are arranged. In this case, the housing 1 has side walls 4 that frame a cavity 5. The side walls 4 are rectangular in shape. The first main surface 6 of the housing 1 forms a bottom surface of the cavity ( Fig. 1) The recesses 7 have the shape of a trough. In the present embodiment, the recesses 7 are identical. In particular, the housing according to the embodiment of Fig. 1. Formed point-symmetric about a center point M.

[0070] The conductor frame 3 has two electrical contact points 8, the contact surfaces 9 of which are shown in top view in Fig. Figure 1 shows the electrical contact points 8. These are arranged centrally in the cavity 5 of the housing 1. A recess 7 is formed laterally to each electrical contact point 8 in the first main surface 6 of the housing 1. Each of the recesses 7 borders opposite side walls 4 of the housing 1. The recesses 7 have a base surface 29 that is vertically spaced from the contact surfaces 9 of the electrical contact points. In this case, the base surface 29 of the recesses 7 is recessed towards a mounting surface 19 of the housing 1.

[0071] Furthermore, the housing body comprises an H-shaped spacer 10 with two longitudinal ribs 11, between which a transverse rib 12 is arranged. The transverse rib 12 runs between the two electrical contact points 8. The longitudinal ribs 11 run along two opposite side walls 4. The H-shaped surface shown in the top view of the housing 1 according to the Fig. Figure 5 schematically illustrates the shape of the H-shaped spacer 10.

[0072] In the present embodiment, the recesses 7 are formed in the housing body 2. The bottom edges of the side walls 4 of the housing body 2 also include metallic areas 13, which are necessary for process-related reasons when forming the conductor frame 3 with the housing body 2.

[0073] A gap 14 is arranged between the transverse web 12 and the two longitudinal webs 11 of the H-shaped spacer 10. In other words, the surfaces of the transverse web 12 and the longitudinal webs 11 lie in a common plane, while in the area of ​​the two gaps 14 the surface is lowered towards the bottom surface of the cavity 6. Furthermore, the corners of the transverse web 12 are rounded.

[0074] The Fig. 2 and Fig. Figure 3 shows schematic perspective views of the conductor frame 3, which is embedded in the housing body 2. The conductor frame 3 includes, for example, a copper core coated with silver.

[0075] Fig. Figure 2 shows a front main surface of the conductor frame 3 with the contact surfaces 9 of the electrical contact points 8, while Fig. Figure 3 illustrates an opposite rear main surface of the conductor frame 3. The conductor frame 3 has external electrical connection points 15 on its rear main surface, which are exposed on a mounting surface 18 of the housing 1.

[0076] Each electrical contact point 8 is mechanically connected to the rest of the conductor frame 3 by a hinged web 16. The hinged web 16 has a smaller thickness than the electrical contact point 8. For example, the hinged web 16 has approximately half the thickness of the electrical contact point 8.

[0077] As the sectional view of housing 1 of the Fig. Figure 4 shows that the electrical contact points 8 are embedded in the housing body 2 in such a way that the contact surfaces 9 of the electrical contact points 8 are limited by the housing body 2.

[0078] The crossbar 12 of the H-shaped spacer 10 projects vertically beyond the contact surfaces 9 of the electrical contact points 8 and forms a platform 31 for a radiation-emitting semiconductor chip to be mounted (see also Fig. 6) The side walls 4, which frame the cavity 5, have a slope to form a reflector for the electromagnetic radiation of a radiation-emitting semiconductor chip 17 in the cavity 5. The recesses 7 are arranged vertically spaced from the contact surfaces 9 of the electrical contact points 8.

[0079] Fig. Figure 7 shows the mounting surface 18 of the housing 1 according to the present embodiment. The rear main surface of the conductor frame 3, as shown by the Fig. 2 and Fig. As described in section 3, the mounting surface 18 of the housing 1 is partially exposed. In particular, external electrical connection points 15 are exposed on the mounting surface 18. The external electrical connection points 15 also have indentations 19 located on the edges 20 of the housing 1. The indentations 19 are provided for checking a soldering process by which the housing 1 is subsequently attached to another element, such as a terminal block.

[0080] In the procedure according to the exemplary embodiment of the Fig. 8, Fig. 9, Fig. 10, Fig. 11, Fig. 12 to Fig. 13. First, a housing 1 is provided, as already shown from the Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6 to Fig. 7 was described ( Fig. 8).

[0081] In a next step, a radiation-emitting semiconductor chip 17, which is designed as a flip chip, is attached with both electrical contacts 21 to the contact surfaces 9 of the electrical contact points 8 using a solder 22.

[0082] The flip chip 17 is shown in the schematic sectional view of the Fig. Figure 10 shows the flip chip 17 having a substrate 23 onto which an epitaxial semiconductor layer sequence 24 is deposited. The epitaxial semiconductor layer sequence 24 has an active zone 25 which generates electromagnetic radiation of a first wavelength range during operation. Two electrical contacts 21 for supplying current to the flip chip 17 are arranged on a rear main surface.

[0083] In this case, the epitaxial semiconductor layer sequence 24, and in particular the active zone 25, is based on a nitride compound semiconductor material, while the support 23 is made of sapphire. During operation, the active zone 25 generates blue light, which is emitted through the support 23.

[0084] After the radiation-emitting semiconductor chip 17 has been attached to the contact surfaces 9, a liquid reflective potting compound 26 is introduced into one of the recesses 7 of the housing 1, for example by dispensing ( Fig. 11) The liquid reflective potting compound 26 is a silicone in which titanium dioxide particles are incorporated. The liquid reflective potting compound 26 is diffusely reflective.

[0085] The liquid reflective potting compound 26 fills the recess 7 and forms a droplet there. The recess 7 containing the liquid reflective potting compound 26 serves as a reservoir for the wetting process of the first main surface 6 of the housing 1. Starting from the recess 7, into which the liquid reflective potting compound 26 has been introduced, the reflective potting compound 26 flows due to capillary forces from the recess 7 under the flip chip 17 to the opposite recess 7. The side walls 4 of the cavity 5 are also wetted with the liquid reflective potting compound 26.

[0086] Fig. Figure 12 shows a schematic sectional view of the housing 1 during the filling process with the liquid reflective potting compound 26 along line AA' of the Fig. 5, while Fig. 13 a schematic sectional view of the housing 1 during the filling process with the liquid reflective potting compound 26 along line BB' of the Fig. 5 shows.

[0087] The liquid reflective potting compound 26 creeps under the radiation-emitting semiconductor chip 17 due to capillary forces and surrounds the solder 22 with which the radiation-emitting semiconductor chip 17 is attached to the contact surfaces 9 of the electrical contact points 8 ( Fig. 12) Furthermore, due to surface tension, the liquid reflective potting compound 26 flows up the side walls 4 of the cavity 5, thereby forming a depression in the center of the first main surface 6 of the housing 1. However, since the depression 7 is filled with the liquid reflective potting compound 26, a comparatively thick, highly reflective layer of the liquid reflective potting compound 26 also forms in this area ( Fig. 13).

[0088] The liquid reflective potting compound 26 is cured to form a solid reflective potting compound 27 (not shown).

[0089] The radiation-emitting component according to the embodiment of the Fig. 14 and Fig. 15 comprises a housing 1 with a housing body 2 into which a conductor frame 3 is inserted. The housing 1 was designed, for example, based on the Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6 to Fig. 7 already described. The radiation-emitting semiconductor chip 17, which is designed here as a flip chip 17, is electrically conductive and mechanically stable connected to two rear electrical contacts 21 by a solder 22, each with a contact surface 9 of an electrical contact point 8. Fig. 14).

[0090] The housing 1 has a first main surface 6 into which two recesses 7 are formed. In this case, the housing 1 has a cavity 5 which is enclosed by side walls 4 in a frame-like manner. The first main surface 6 of the housing comprises a bottom surface 6 of the cavity 5.

[0091] The recesses 7 are completely filled with a reflective potting compound 27, which extends to the underside of a rear main surface 30 of the radiation-emitting semiconductor chip 17. The reflective potting compound 27 extends to a rear main surface 30 of the radiation-emitting semiconductor chip 17. Between the electrical contact points 8, the housing 1 has an H-shaped spacer 10 on which the radiation-emitting semiconductor chip 17 sits. In this case, the H-shaped spacer 10 is part of the housing body 2.

[0092] How Fig. Figure 15 shows that metallic areas 13 of the bottom edges of the side walls 4 of the cavity 5, which are necessary when forming the conductor frame 3 with the housing body 2, are also completely covered by the reflective potting compound 27.

[0093] The radiation-emitting component according to the embodiment of the Fig. 16, in comparison to the radiation-emitting component according to the embodiment of the Fig. 14 and Fig. 15 additionally a conversion element 28, which converts electromagnetic radiation of the first wavelength range emitted by the radiation-emitting semiconductor chip 17 into electromagnetic radiation of a different wavelength range.

[0094] The radiation-emitting component according to the embodiment of the Fig. 17, unlike the radiation-emitting component according to the embodiment of the Fig. 14 and Fig.15 a housing 1 in which the recesses 7 are incorporated into the ladder frame 3. Reference symbol list 1 case 2 Housing bodies 3 ladder frames 4 side wall 5-cavity 6. First main surface of the housing 7. Further Study 8 electrical contact points 9 Contact area 10 H-shaped spacers 11 Longitudinal web 12 crossbars 13 metallic areas 14 columns 15 external electrical connection points 16 Joint bridge 17 Semiconductor chips 18 mounting surface 19 indentation 20 edge 21 electrical contact 22 Lot 23 carriers 24 epitaxial semiconductor layer sequence 25 active zone 26 liquid reflective potting compound 27 solid reflective potting compound 28 Conversion element 29 Floor area of ​​the depression 30 rear main surface 31 podium M Center

Claims

[1] Housing (1) for a radiation-emitting device comprising: - two electrical contact points (8) arranged directly next to each other on a first main surface (6) of the housing (1), - two recesses (7) on the first main surface (6) of the housing (1), wherein one of the recesses (7) is arranged next to each electrical contact point (8), and - an H-shaped spacer (10) comprising two longitudinal webs (11) in the top view of the housing (1), between which a transverse web (12) is arranged, wherein - the crossbar (12) runs between the two electrical contact points (8). [2] Housing according to the previous claim, wherein the first main surface (6) is surrounded by side walls (4) in a frame-like manner, so that a cavity (5) is formed, wherein the first main surface (6) of the housing (1) comprises or forms a bottom surface of the cavity. [3] Housing (1) according to one of the above claims, wherein a bottom surface (29) of the recess (7) is arranged vertically spaced from a contact surface (9) of the electrical contact points. [4] Housing (1) according to any one of the above claims, wherein - the first main surface (6) is surrounded by side walls (4) in a frame-like manner, so that a cavity (5) is formed, wherein the first main surface (6) of the housing (1) forms or comprises a bottom surface of the cavity, and - the longitudinal webs (11) run along opposite side walls (4). [5] Housing (1) according to one of the above claims, wherein a gap (14) is formed between the transverse web (12) and the longitudinal web (11). [6] Housing (1) according to one of the above claims, comprising a housing body (2) and a conductor frame (3) embedded in the housing body (2), wherein a contact surface (9) of the electrical contact points (8) is exposed on the first main surface (6) of the housing (5). [7] Housing (1) according to the previous claim, wherein at least one of the recesses (7) is formed in the housing body (2). [8] Housing (1) according to claim 6 or 7, wherein at least one of the recesses (7) is formed in the conductor frame (3). [9] Housing (1) according to any one of claims 6 to 8, wherein the electrical contact points (8) are connected to the rest of the conductor frame (3) by a hinged web (16), wherein the hinged web (16) has a lesser thickness than the electrical contact points (8). [10] Housing (1) according to one of claims 6 to 9, wherein the contact surfaces (9) of the electrical contact points (8) are limited by the housing body (2). [11] Method for manufacturing a radiation-emitting device comprising the following steps: - Providing a housing (1) according to any one of the above claims, - Attaching a radiation-emitting semiconductor chip (17) to one of the electrical contact points (8), wherein a rear main surface of the radiation-emitting semiconductor chip (17) projects over the recesses (7), - Introducing a liquid reflective potting compound (26) into the recesses (7) so that the liquid reflective potting compound (26) flows from the recesses (7) under the semiconductor chip (17). [12] Method according to the previous claim, wherein the liquid reflective potting compound (26) flows under the semiconductor chip (17) due to capillary forces starting from the depression (7). [13] Radiation-emitting component with: - a housing (1) comprising two electrical contact points (8) arranged on a first main surface (6) of the housing (1) and two recesses (7) in the first main surface (6) of the housing (1), wherein one of the recesses (7) is arranged next to each electrical contact point (8), - the housing (1) comprises an H-shaped spacer (10) with two longitudinal ribs (11) between which a transverse rib (12) is arranged, the transverse rib (12) running between the two electrical contact points (8), - a radiation-emitting semiconductor chip (17) with an electrical contact (21) which is applied to one of the electrical contact points (8), wherein - the radiation-emitting semiconductor chip (17) rests with its rear main surface (30) on at least one longitudinal rib and / or the transverse rib (12), and - a reflective potting compound (27) arranged under the radiation-emitting semiconductor chip (17) and in the recesses (7), wherein - a rear main surface (30) of the radiation-emitting semiconductor chip (17) protrudes over the recesses (7). [14] Radiation-emitting component according to the previous claim, wherein the reflective potting compound (27) extends to the rear main surface (30) of the radiation-emitting semiconductor chip (17).

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