Chip package and method for forming a chip package

Abstract

A chip package is provided. The chip package comprises a chip with at least one contact pad, a contact structure formed from at least one continuous, longitudinally extending, electrically conductive element by attaching the conductive element to at least three contact positions on the contact pad, wherein the conductive element bends away from the contact pad between pairs of successive contact positions, and an encapsulation that partially encapsulates the contact structure, wherein the encapsulation has an outer surface facing away from the chip, and wherein the contact structure is partially exposed at the outer surface.

Description

Technical field

[0001] Various embodiments generally relate to a chip package and a method for forming a chip package. background

[0002] In prior art chip packages, multiple vertical connections between a chip and a clip may be required for a power application. Examples of vertical connection formation include multiple stud bumps, copper pillars, and vertical wires. Each of these prior art intermediate connections may have its own limitations.

[0003] An example of a chip package 100 with a chip 102, a clip 104, an encapsulation material 106 and several stud bumps 108 is shown in Fig. Figure 1 shows the arrangement of the multiple stud-bumps 108, which may need to be stacked to achieve a predefined height, can be time-consuming and can also put stress on the chip 102 due to the pressure exerted on the chip 102 by the rigid stud-bump material.

[0004] Copper columns can be grown in place, but the technique can be expensive due to the high density required, and the maximum height is limited to about 70 µm.

[0005] While vertical wires can achieve great maximum heights, they may be limited to a narrow range of acceptable stiffness and are not sufficiently robust against wire displacement and / or bending. Furthermore, they may be applied with a small tip, which reduces surface contact, and may need to be applied individually, which is a slow process. Brief description

[0006] A chip package is provided. The chip package comprises a chip with at least one contact pad, a contact structure formed from at least one continuous, longitudinally extending, electrically conductive element by attaching the conductive element to at least three contact positions on the contact pad, wherein the conductive element bends away from the contact pad between pairs of successive contact positions, and an encapsulation that partially encapsulates the contact structure, wherein the encapsulation has an outer surface facing away from the chip, and wherein the contact structure is partially exposed at the outer surface. List of characters

[0007] In the drawings, the same reference numerals generally refer to the same parts in the different views. The drawings are not necessarily to scale, with the emphasis generally being on illustrating the principles of the invention. The following description details various embodiments of the invention with reference to the following drawings, in which: Fig. Figure 1 shows a schematic cross-sectional view and a schematic top view of a chip package according to a prior art; Fig. Figure 2 shows a schematic cross-sectional view and a schematic top view of a chip package according to different embodiments; Fig. 3A to Fig. Figure 3C, each as a schematic cross-sectional view and schematic top view, shows chip packages according to different embodiments; Fig. 4A and Fig. 4B illustrates a method for forming a chip package according to different embodiments in a series of schematic cross-sectional views; Fig. Five different contact structures in chip packages according to various embodiments are shown; and Fig. Figure 6 shows a flowchart of a process for forming a chip package. Description

[0008] The following detailed description refers to the attached drawings, which show specific details and embodiments of the invention for illustrative purposes.

[0009] The word "exemplary" is used here in the sense of "serving as an example, instance, or illustration." Each embodiment or design described here as "exemplary" is not necessarily to be interpreted as preferable or advantageous over other embodiments or designs.

[0010] The word "over" in reference to a deposited material formed "over" a side or surface can be used here to mean that the deposited material can form "directly on," for example, in direct contact with the indicated side or surface. The word "over" in reference to a deposited material formed "over" a side or surface can also be used here to mean that the deposited material can form "indirectly on" the indicated side or surface, with one or more additional layers arranged between the indicated side or surface and the deposited material.

[0011] Various aspects of the disclosure apply to devices, and various aspects of the disclosure apply to processes. It is understood that fundamental properties of the devices also apply to the processes, and vice versa. For the sake of brevity, a duplicate description of such properties may therefore have been omitted.

[0012] Various embodiments described herein provide a chip package and method for its manufacture which offer one or more advantages over known packages and / or processes, such as greater flexibility in the height of the vertical interconnects, a reduction in manufacturing time and / or costs.

[0013] In various embodiments, a contact structure in a chip package can be formed from at least one continuous, longitudinally extending, electrically conductive element. The continuous, longitudinally extending, electrically conductive element (or, in the case of more than one, each of the continuous, longitudinally extending, electrically conductive elements) is attached to a contact pad of a chip in at least three contact positions such that the conductive element bends away from the contact pad between pairs of successive contact positions. The continuous, longitudinally extending, electrically conductive element can, for example, be a bond wire or a bond tape.

[0014] The chip package according to various embodiments can allow for a more flexible configuration of the height of a contact structure (e.g., a vertical connection) contained within the chip package. Furthermore, a greater vertical connection height can be achieved compared to copper columns, which are typically only growable to a maximum height of approximately 45 to 70 µm, and vertical wire solutions. Vertical wire solutions generally lack stiffness beyond a certain height due to flexion and expansion of the wires. Contact structures in various embodiments can also provide a larger contact area with the contact pad of a chip and / or electrically conductive material compared to vertical wires.

[0015] The chip package can also include, in various embodiments, an encapsulation that partially encapsulates the contact structure. The encapsulation can be made of a material commonly used in chip packages.

[0016] In some embodiments, the encapsulation may include a platable molding compound containing electrically conductive particles dispersed in a dielectric base material (the corresponding technology is referred to as platable molding technology, PMT). The platable molding compound can be used to facilitate the deposition of an electrically conductive material, such as a clip (e.g., a copper clip), for contacting the chip. The chip package can be used, for example, in energy applications.

[0017] Furthermore, a method for forming a chip package is provided. The method can comprise forming a contact structure by attaching at least one continuous, longitudinally extending, electrically conductive element to a contact pad of a chip in at least three contact positions, wherein the conductive element bends away from the contact pad between pairs of successive contact positions, and partially encapsulating the contact structure, wherein the contact structure is partially exposed on an outer surface of the encapsulation.

[0018] The methods for forming chip packages, in their various embodiments, can also offer advantages over alternative solutions, namely in terms of reducing manufacturing time (leading to a corresponding increase in the number of units produced per hour (UPH)) and / or costs. For example, attaching a continuous, longitudinally oriented, electrically conductive element to a contact pad of a chip at at least three contact positions using a wire or tape bonding process is faster and more cost-effective than the method described in [reference to relevant document]. Fig. The method shown in Figure 1 involves stacking multiple stud bumps at three contact positions. Similarly, the various embodiments can also be faster than applying multiple vertical wires, which typically requires trimming before bonding to ensure a uniform wire length.

[0019] Fig. Figure 2 shows a schematic cross-sectional view (top of page) and a schematic top view (bottom) of a chip package 200 according to various embodiments, and Fig. 3A to Fig. Figures 3C illustrate, each as a schematic cross-sectional view, a schematic view from below ( Fig. 3B and Fig. 3C) or top view ( Fig. 3A), chip packages 200 according to various embodiments.

[0020] In various embodiments, which are described in the Fig. 2 and Fig. 3A to Fig. As shown in Figure 3C, the chip package 200 comprises a chip 102 with at least one contact pad (102C1, 102C2), e.g., a copper contact pad. The chip package 200 further comprises a contact structure 208 formed from a continuous, longitudinally extending, electrically conductive element (e.g., a bond wire or bond tape, for example, comprising or consisting of copper), by attaching the conductive element 208 to at least three contact positions C on the contact pad 102C1 or 102C2.

[0021] The length of the contact structure 208 between successive contact positions C can be greater than the distance between the successive contact positions C. The contact structure 208 can, for example, have a wave-like pattern with multiple inflection points. In the examples in Fig. 2 and Fig. 3A The contact positions C are located at inflection points that are concave downwards. The contact positions C can also be located at inflection points that are concave upwards, as in Fig. 3B and Fig. 3C. Consequently, the contact structure 208 can bend away from the contact pad 102C1 or 102C2 between (e.g., successive) pairs of contact positions C. In the context of the contact positions C of the contact structure 208, "successive" can refer to contact positions C that follow one another along the length of the continuous, longitudinally extending electrically conductive element. If more than one longitudinally extending electrically conductive element is used to form the contact structure 208, each of the conductive elements has a plurality of successive contact positions C. A smaller distance between successive contact positions C is generally preferred so that there are more contact points between the contact structure and the contact pad.In various embodiments, the minimum distance can be determined by the size and / or profile of the capillary tip used to connect the electrically conductive element to the contact pad. The minimum distance is sufficient to prevent the tip from touching a subsequent contact point C.

[0022] The application process, using the continuous, longitudinally extending electrically conductive element that is longer than the distances between each pair of successive contact positions C, causes the conductive element to bend away from the contact pad 102C1 or 102C2. At the contact position C, the conductive element may have a U- or V-shape, with the legs of the U or V extending away from the contact pad. Between the contact positions C, the longitudinally extending electrically conductive element may be gently curved, for example, without sharp edges. The angle of the longitudinally extending electrically conductive element with respect to the contact pad 102C1 or 102C2 may be shallower near the contact position and in an upper region furthest from the contact pad than in a middle section between the contact pad and the upper region.Even in embodiments in which the at least one continuous elongated electrically conductive element, from which the contact structure 208 is initially formed, is later partially removed in the upper region and thereby divided into individual segments, the features of the three-dimensional arrangement of the segments described above and further show that the segments were initially arranged using the at least one continuous elongated electrically conductive element.

[0023] The method for attaching a contact structure 208 to a contact field can, for example, include or consist of wire bonding, tape bonding, or ultrasonic bonding. Other methods such as soldering, gluing, and the like can also be used.

[0024] In various embodiments, the continuous, longitudinally extending electrically conductive element can be shaped during application to form the contact structure 208, which bends away from the contact pad 102C1 or 102C2. For example, the contact structure 208 can have one or more continuous, longitudinally extending electrically conductive elements in the form of a bond wire or bond tape. The bond wire or bond tape is attached to the contact pad 102 using wire bonding or tape bonding methods.

[0025] In some embodiments, the contact structure 208 can extend along one direction. For example, as in the Fig. 4A and Fig. 4B as well as in the top view of Fig. Figure 5 shows a plurality of continuous, longitudinally extending, electrically conductive elements 208_1, extending in the same direction and arranged parallel to one another. The contact structure 208 can also have one or more continuous, longitudinally extending, electrically conductive elements that extend in more than one direction. For example, in the middle view of Fig. 5. A first plurality of continuous, longitudinally extending, electrically conductive elements 208_1 are formed, extending along a first direction and parallel to each other, and a second plurality of continuous, longitudinally extending, electrically conductive elements 208_2, extending along a second direction orthogonal to the first direction, thus forming a net-like pattern. In various embodiments, the contact structure 208 can be arranged in a two-dimensional plane, e.g., as a zigzag structure, as shown in the lower view of Fig. 5 shown, or e.g. as a meandering structure (not shown).

[0026] The contact structure 208 can be used in various embodiments to form a vertical connection within the chip package 200. The chip package 200 can be used in power applications. Therefore, it may be desirable to provide a large electrically conductive cross-section for the vertical connection in order to conduct as much current as possible in the vertical direction. In various embodiments, essentially an entire area of ​​the chip contact pad 102C1 or 102C2 can be covered by the contact structure 208, for example, with a regular pattern. In other embodiments, for example, when there is no need to conduct a large current, a single contact structure 208 or one or more contact structures that fill only a fraction of the area of ​​the chip contact pad 102C1 or 102C2 may be sufficient.

[0027] The chip package 200 can further comprise an encapsulation 106 that partially encapsulates the contact structure 208, wherein the encapsulation 106 can have an outer surface 106S facing away from the chip 102, and wherein the contact structure 208 is partially exposed on the outer surface 106S (for example, as in Fig. 4A(iii) shown).

[0028] The encapsulation 106 can be a molding material in various embodiments, such as is commonly used in prior art chip packages. A corresponding method is described in Fig. 4A is shown.

[0029] In various embodiments, the encapsulation 106 can comprise or consist of a platable molding compound having electrically conductive particles 106P dispersed in a dielectric base material 106B, such as in Fig. 4B is shown.

[0030] The encapsulation 106 can be designed essentially as is known in the art.

[0031] In various embodiments, a mold that can be arranged around the chip 102 and the contact structure 208 for filling with a molding material forming the encapsulation 106 can be configured to directly expose parts of the contact structure 208 on the outer surface 106S of the encapsulation 106. For example, the encapsulation process can include a film-assisted molding process in which an area above the contact structure 208 is protected and not filled with molding material.

[0032] In other embodiments, the contact structure 208 can be completely covered with molding material, and the encapsulation 106 can be machined, for example after curing, to partially expose the contact structure 208, for example by grinding, laser processing, etching, or other suitable techniques known in the art. This process is described in Fig. 4A and Fig. Figure 4B shows the transition from process (ii) to (iii). In embodiments where the encapsulation is a platable molding compound, laser processing (e.g., laser direct structuring) can be used both for removing the encapsulation material and for activation.

[0033] In various embodiments, an electrically conductive material 104 can be arranged on the outer surface 106S in contact with the exposed contact structure 208. Examples of electrically conductive material 104 include conductive clips, plates, pads, and / or wires. The electrically conductive material 104 can take the form of a uniform electrically conductive surface, such as a clip, as shown in Fig. 2 and Fig. 3A shown, have or have a plurality of electrically conductive surfaces (104), as in the exemplary embodiments of Fig. 3B and Fig. 3C shown.

[0034] The electrically conductive material 104 can also be pre-formed or deposited. The electrically conductive material 104 can be arranged in a chip package in various embodiments using any suitable known method for forming a metal layer. In various embodiments, in which the encapsulation uses the plating compound 106, 106P, 106B (see Fig. 4B) or consists of this, the electrically conductive material 104 can have an electrically conductive layer 104, 104_1, which is formed at least partially using the electrically conductive particles 106P embedded in the dielectric base material 106B. The dielectric base material 106B can, for example, be a laser-activated molding compound containing metal atoms that can be activated by laser processing. These metal atoms serve as nuclei for the deposition of metals or metal alloys (e.g., Cu, Ni, NiP, Au, Cu / Ni / Au stacks, etc.), for example, by deposition or coating in the laser-activated areas of the molding compound (“laser-activated areas”). The electrically conductive material 104 can then be formed by coating the laser-activated areas of the dielectric base material 106B with a metal / metal alloy or other electrically conductive substances.Depending on the requirements, the electrically conductive layer formed from the electrically conductive particles 106P can serve as the final metallization layer or form a base layer for further metallization layers 104_2 to be applied. The electrically conductive material thus formed can function as metal clips, pads and / or conductor tracks.

[0035] A thickness H (see Fig. 2) The thickness of the encapsulation 106 over the chip pad 104C1 or 104C2 can be in a range of approximately 40 µm to approximately 1 mm, e.g., between 100 µm and 700 µm, or between 200 µm and 500 µm. The thickness can be easily adjusted, for example, by comparing Fig. 3B and Fig. As illustrated in 3C, a thickness H can be achieved up to which the encapsulation 106 is removed (thereby forming an opening 550, see Fig. 5) determine where the contact structure 208 is exposed and whether the contact structure still forms a continuous structure or individual segments after the partial removal of the encapsulation 106, whereby any thickness H can expose parts of the contact structure 208 and can therefore be suitable as the final thickness H.

[0036] In various embodiments, the chip package 200 can be configured for power applications, and the chip 102 can be configured as a power semiconductor chip. In some embodiments, the contact pad (102C1 or 102C2) to which the contact structure 208 is attached is a source contact pad.

[0037] Fig. Figure 3A shows a wired chip package 200 comprising a chip 102 mounted on a die paddle of a leadframe 330. The chip 102 has a contact pad 102C2 located on a first side of the chip 102 and a second contact pad 102C1 located on a second, opposite side. A contact structure 208 acts as a vertical connection for coupling the contact pad 102C2 to an electrically conductive material 104 located above a top surface of the encapsulation 106. The contact structure 208 has a continuous, longitudinally extending, electrically conductive element attached to the contact pad 102C1 at least three contact positions C, where the conductive element bends away from the contact pad 102C2.In this example, the electrically conductive material 104 extends beyond the width of the chip 102 to establish direct electrical contact with the leads (330b, 330c) of the leadframe. The electrically conductive material 104 can be, for example, a conductive clip or a conductive plate that is either pre-formed or applied. In some embodiments, the chip can be configured as a power semiconductor device. In power semiconductor devices, it may be desirable for the contact structure to occupy more than 50% of the contact pad 102C2 to provide a large cross-section for current conduction. The chip 102 can also be configured as a vertical device in a source-up configuration, with contact pad 102C2 acting as the source contact pad and the second contact pad 102C1 acting as the drain contact pad.Alternatively, the chip 102 can be arranged in a source-down configuration, with the source contact pad at the bottom (102C1 instead of 102C2), the drain contact pad at the top, and the contact structure connected to the lower contact pad.

[0038] The Chippackage 200 can be configured in various embodiments as a vertical device (such as a vertical transistor) in a source-down configuration, an example of which is shown in Fig. 3B is shown in the example of Fig. 3B the electrically conductive material 104 has a plurality of individual electrically conductive surfaces which are on exposed parts 208E (see Fig. 4A) of the conductive structure 208. The electrically conductive material 104 can be configured as a plurality of external contact points projecting from a lower surface of the encapsulation 106, thus facilitating the attachment of the chip package 200 to another surface, such as a substrate, e.g., a printed circuit board (PCB). The larger contact area between a chip package 200, as in the embodiment of Fig. 3B and a printed circuit board results in a low thermal impedance between the junction and the terminals and can lead to higher thermal efficiency compared to typical surface-mount packages. Furthermore, placing a source pad near a printed circuit board can also improve the switching speed of the chip 102. In some embodiments, the electrically conductive material 104 can be formed from a solderable material such as tin to facilitate the attachment of the chip package 200 to another surface, such as a printed circuit board. In the example of Fig. 3B The contact structure has the form of a continuous electrically conductive element. The forming process can include the use of a selective forming process, such as film-assisted molding, so that the top surfaces of the electrically conductive material 104 are exposed 208E and not covered by an encapsulation. Consequently, the contact structure has one or more continuous, longitudinally extending electrically conductive elements. The electrically conductive material 104 can be formed by selectively applying a conductive material to the exposed parts 208E of the contact structure 208 (e.g., by coating). Preferably, the conductive material is a solderable material such as tin or nickel-gold (by electroless nickel-gold plating). Other materials may also be suitable.In other embodiments, the electrically conductive material 104 can alternatively be formed as a continuous layer instead of individual electrically conductive surfaces (also referred to as a structured layer).

[0039] The chip 102 can be configured in various embodiments. Fig. 3B can be configured as a vertical device, such as a vertical transistor. For example, the chip 102 can be arranged in a source-down configuration, with the contact pad 102C1 on the underside of the chip acting as the source contact pad and a drain contact pad 102C2 on the top side of the chip. The top side of the chip can be attached to a line 330c (e.g., drain line) via an electrically conductive adhesive 334, such as solder. The chip 102 can further have a gate pad 103 located on the same side of the chip 102 as the source contact pad 102C1. The terminals (330a, 330b) protrude from the encapsulation 106. It is understood that the gate and drain connections do not refer to the Fig. The options shown in section 3B are limited. Other types of connectors, such as clips, may also be suitable. The Chippackage 200 may also be a lead-free package.

[0040] Fig. Figure 3C shows a Chippackage 200 according to another embodiment. The Chippackage consists of Fig. 3C is similar to the one from Fig. 3B, but the contact structure 208 has individual segments instead of being continuous. The housing is made of Fig. 3C can be produced by encapsulating the entire contact structure 208 with a mold and removing parts of the mold (e.g., by grinding) to expose the contact structure. When the mold is removed, the upper parts of the contact structure adjacent to the outer surface of the encapsulation 106 are also removed. In other words, the parts of the contact structure that are in Fig. The segmented contact structure 208 shown in Figure 3C is formed from at least one continuous, longitudinally extending, electrically conductive element by means of a method that is similar to the one described above in connection with Fig. 3A or Fig. 3B is similar or identical to the segment described and is later partially removed, creating the individual segments.

[0041] Electrically conductive material 104 can then be applied to exposed parts 208E of the conductive structure 208 using the various methods described in relation to Fig. 3B are described, are formed.

[0042] Fig. Figure 6 shows a flowchart 600 for a procedure for forming a chip package.

[0043] The method can include forming a contact structure by attaching at least one continuous, longitudinally extending, electrically conductive element to a contact pad of a chip in at least three contact positions, wherein the conductive element bends away from the contact pad between pairs of successive contact positions (610), and partially encapsulating the contact structure, wherein the contact structure is partially exposed on an outer surface of the encapsulation (620).

[0044] Fig. 4A and Fig. Figure 4B illustrates, as a sequence of schematic cross-sectional views, methods for forming a chip package according to various embodiments.

[0045] As in Fig. As shown in Figure 4A(i) (as a cross-section and top view), the contact structure 208 (e.g., multiple tape or wire bonds) can be attached to a contact pad 102C1 of the chip 102 at contact positions C. In various embodiments, the contact structure 208 can be attached to the contact pad 102C1 using a wire bonding or tape bonding process. The chip 102 with the attached contact structure 208 can then be partially encapsulated by the encapsulation 106, leaving parts 208E of the contact structure (not shown) exposed. Alternatively, the encapsulation 106 can first completely encapsulate the contact structure 208, as shown in Figure 4A(i). Fig. 4A(ii), and subsequently partially removed (see Fig. 4A(iii)) to expose the contact structure 208 on an outer surface 106S of the encapsulation 106. Methods such as grinding, etching, or laser processing can be used for the partial removal of the encapsulation. Depending on the methods used, the tips of the electrically conductive element can remain intact or be removed. In the first case, the resulting contact structure has one or more continuous, longitudinally extending electrically conductive elements; in the second case, individual segments. Subsequently, an electrically conductive material 104 can be arranged on the outer surface 106S of the encapsulation 106 in contact with exposed parts 208E of the contact structure 208 ( Fig. 4A(iv)). The electrically conductive material 104 can, for example, be a pre-formed structure such as a conductive clip, a plate, or other forms of conductive connectors. The electrically conductive material 104 can also be applied.

[0046] Fig. Figure 4B shows another exemplary method for forming a chip package similar to the one in Fig. Figure 4A illustrates this. In this example, however, the encapsulation material 106 is a platable molding compound 106 comprising electrically conductive particles 106P embedded in a dielectric base material 106B. The use of a platable molding compound makes it possible to define the area for an electrically conductive material and to form at least a portion of it using the electrically conductive particles 106P embedded in the platable molding compound. The dielectric base material 106B can, for example, be a laser-activated molding compound comprising at least one additive, e.g., in the form of an organic metal complex, which can be activated by a physicochemical reaction induced by laser processing. The laser-induced physicochemical reaction causes metal atoms to be released from the metal complex, thereby serving as a nucleus for the deposition of metal or metal alloys (e.g., Cu, Ni, NiP, Au, Cu / Ni / Au stacks, etc.).) by, for example, plating or coating in the laser-activated areas of the molding compound ("laser-activated areas"). The initial structure in . Fig. 4B(i) can be found in Fig. 4A(i) shown. The contact structure can then be completely covered with an encapsulation material 106 in the form of a plating compound ( Fig. 4B(ii)). The encapsulation 106 is then partially removed to expose parts 208E of the contact structure on an outer surface of the encapsulation ( Fig. 4B(iii)). In some embodiments, a laser direct structuring method can be used both for the partial removal of the encapsulation material and for the activation of the electrically conductive particles 106P in the encapsulation. An electrically conductive material 104, or a portion thereof, can subsequently be formed by coating the laser-activated regions of the encapsulation 106 (which has the same pattern as the desired electrically conductive material) with a metal / metal alloy or other electrically conductive substances ( Fig. 4B(iv)). The electrically conductive material thus formed can function as metal clips, pads and / or conductor tracks.

[0047] The following are several examples: Example 1 is a chip package. The chip package comprises a chip with at least one contact pad, a contact structure formed from at least one continuous, longitudinally extending, electrically conductive element by attaching the single conductive element or each of the more than one conductive element to at least three contact positions on the contact pad, wherein the at least one conductive element is bent away from the contact pad between pairs of successive contact positions, and an encapsulation that partially encapsulates the contact structure, wherein the encapsulation has an outer surface facing away from the chip, and wherein the contact structure is partially exposed at the outer surface. In Example 2, the object according to Example 1 may optionally also have an electrically conductive material arranged on the outer surface in contact with the exposed contact structure, e.g. a clip or a plurality of individual external contact points that are exposed outside the encapsulation to be soldered. In Example 3, the object according to Example 1 or 2 may optionally further have the at least three contact positions arranged in a straight line. In Example 4, the object according to Example 1 or 2 may optionally further have that the contact structure has four or more contact positions, and wherein the exposed parts of the contact structure form a two-dimensional pattern. In Example 5, the object of one of Examples 1 to 4 may optionally have a contact structure comprising at least two continuous, longitudinally extending, electrically conductive elements, each of which is attached to the contact pad at at least three contact positions. In Example 6, the object of one of Examples 1 to 5 may optionally further have that a two-dimensional part of the outer surface, enclosed by the exposed parts of the contact structure, constitutes at least 50% of the outer surface. In Example 7, the article according to Example 5 or 6 may optionally further have a contact structure consisting of a first set of continuous, longitudinally extending, electrically conductive elements with contact positions arranged along a first direction, and a second set of continuous, longitudinally extending, electrically conductive elements with contact positions arranged along a second direction that is parallel or at an angle to the first direction. In Example 8, the object of one of Examples 1 to 7 may optionally further exhibit that the exposed parts of the contact structure form at least part of a matrix pattern. In Example 9, the subject of one of Examples 1 to 8 may optionally further include the encapsulation having or consisting of a platable molding compound having electrically conductive particles dispersed in a dielectric base material. In Example 10, the subject matter of Examples 2 and 8 may optionally further include the electrically conductive material having an electrically conductive layer formed using the electrically conductive particles released from the dielectric base material. In Example 11, the object of one of Examples 1 to 10 may optionally further have that the electrically conductive material has a deposited layer of metal or metal alloy. In Example 12, the item of one of Examples 1 to 11 may optionally further have that the thickness of the encapsulation over the chip pad is between 40 µm and 1 mm. In Example 13, the object of one of Examples 2 to 12 may optionally further have the electrically conductive material being a conductive clip. In Example 14, the subject of one of Examples 2 to 12 may optionally further have the electrically conductive material configured as a plurality of individual external contact points protruding from the outer surface of the encapsulation. In Example 15, the object according to Example 14 may optionally further have the majority of the individual electrically conductive surfaces being formed from a solderable material. In Example 16, the object of one of Examples 1 to 15 may optionally further have a contact structure that includes a bond wire or a bond tape. In Example 17, the object of one of Examples 1 to 16 may optionally further have the contact structure and / or the contact pad made of copper. In Example 18, the object of one of Examples 1 to 17 may optionally further exhibit that the contact structure is a continuous structure. In Example 19, the object of one of Examples 1 to 17 may optionally further have the contact structure comprising a plurality of individual contact segments, each of which is exposed on the outer surface. In Example 20, the subject of one of Examples 1 to 19 may optionally further feature that the chip is configured as a power semiconductor chip. In Example 21, the item according to Example 20 may optionally have the contact pad to which the contact structure is attached as a source contact pad. In Example 22, the item according to Example 21 may optionally have the source contact pad located on a first side of the chip, the chip further having a drain contact pad located on a second side of the chip opposite the first side. Example 23 is a method for forming a chip package. The method may include forming a contact structure by attaching at least one continuous, longitudinally extending, electrically conductive element to a contact pad of a chip in at least three contact positions, wherein the conductive element bends away from the contact pad between pairs of successive contact positions, and the contact structure is partially encapsulated, with the contact structure being partially exposed at an outer surface of the encapsulation. In Example 24, the object according to Example 23 may optionally further have an electrically conductive material arranged on the outer surface in contact with the exposed contact structure. In Example 25, the object according to Example 23 or 24 may optionally further have the at least three contact positions arranged in a straight line. In Example 26, the object according to Example 23 or 24 may optionally further have that the at least three contact positions have four or more contact positions, and wherein the exposed parts of the contact structure form a two-dimensional pattern. In Example 27, the subject of one of Examples 23 to 26 may optionally further have the contact structure consisting of a first set of continuous, longitudinally extending, electrically conductive elements with contact positions arranged along a first direction, and of a second set of continuous, longitudinally extending, electrically conductive elements with contact positions arranged along a second direction that is parallel or at an angle to the first direction. In Example 28, the object of one of Examples 23 to 27 may optionally further have that a two-dimensional part of the outer surface, enclosed by the exposed parts of the contact structure, constitutes at least 50% of the outer surface. In Example 29, the object of one of Examples 23 to 28 may optionally further exhibit that the exposed parts of the contact structure form at least part of a matrix pattern. In Example 30, the subject of one of Examples 23 to 29 may optionally further include the encapsulation having a platable molding compound or consisting of one having electrically conductive particles dispersed in a dielectric base material. In Example 31, the subject matter of Examples 23 and 30 may optionally further include the electrically conductive material having an electrically conductive layer formed by electrically conductive particles released from the dielectric base material. In Example 32, the subject of one of Examples 24 to 31 may optionally further include the arrangement of the electrically conductive material comprising the application of a metal layer. In Example 33, the item of one of Examples 23 to 32 may optionally further have that the thickness of the encapsulation over the chip pad is between 40 µm and 1 mm. In Example 34, the subject of one of Examples 23 to 32 may optionally further include a contact structure containing a bond wire or a bond tape. In Example 35, the object of one of Examples 23 to 32 may optionally further have the contact structure and / or the contact pad having copper. In Example 36, the object of one of Examples 23 to 33 may optionally further exhibit that the contact structure is a continuous structure. In Example 37, the subject of one of Examples 23 to 36 may optionally further include a complete encapsulation of the contact structure and a removal of part of the encapsulation, thereby partially exposing the contact structure on the outer surface of the encapsulation. In Example 38, the object according to Example 37 may optionally also have a partial removal of the contact structure, whereby the contact structure is divided into a plurality of individual contact segments, each of which is exposed on the outer surface. In Example 39, the item according to Example 38 may optionally further have the electrically conductive material configured as a plurality of individual external contact points protruding from the outer surface of the encapsulation. In Example 40, the subject of one of Examples 23 to 39 may optionally further include the fact that the chip is configured as a power semiconductor chip. In Example 41, the item according to Example 40 may optionally further have the chip configured as a power semiconductor chip.

[0048] Although the invention has been shown and described, particularly with reference to specific embodiments, it should be clear to those skilled in the art that various changes in form and details can be made without affecting the spirit and scope of the invention as defined by the accompanying claims. The scope of the invention is therefore specified by the accompanying claims, and all modifications that fall within the scope and equivalence of the claims are thus to be included.

Claims

[1] A chip package (200), comprising: a chip (102) with at least one contact pad (102C1, 102C2); a contact structure (208) formed from at least one continuous, longitudinally extending, electrically conductive element by attaching the at least one conductive element to at least three contact positions (C) on the contact pad (102C1, 102C2), wherein the at least one conductive element bends away from the contact pad (102C1, 102C2) between pairs of successive contact positions (C); and an encapsulation (106) that partially encapsulates the contact structure (208), wherein the encapsulation (106) has an outer surface (1065) facing away from the chip (102), and wherein the contact structure (208) on the outer surface (106S) is partially exposed, further comprising: an electrically conductive material (104) arranged on the outer surface (106S) in contact with the exposed contact structure (208); wherein the encapsulation (106) comprises or consists of a platable molding compound having electrically conductive particles (106P) dispersed in a dielectric base material (106B); and wherein the electrically conductive material (104) has an electrically conductive layer formed using the electrically conductive particles released from the dielectric base material (106B). [2] The chip package (200) according to claim 1, wherein the contact structure (208) has four or more contact positions (C) and wherein the exposed parts of the contact structure (208) form a two-dimensional pattern. [3] The chip package (200) according to one of claims 1 or 2, wherein a two-dimensional part of the outer surface (1065) enclosed by the exposed parts of the contact structure (208) constitutes at least 50% of the outer surface (106S). [4] The chip package (200) according to any one of claims 1 to 3, wherein the contact structure (208) is formed from a first set of continuous, longitudinally extending, electrically conductive elements with contact positions (C) arranged along a first direction, and from a second set of continuous, longitudinally extending, electrically conductive elements with contact positions (C) arranged along a second direction, which is parallel or at an angle to the first direction. [5] The chip package (200) according to any one of claims 1 to 4, wherein the electrically conductive material (104) comprises a deposited metal or metal alloy layer. [6] The chip package (200) according to any one of claims 1 to 5, wherein the electrically conductive material (104) is a conductive clip. [7] The chip package (200) according to any one of claims 1 to 6, wherein the electrically conductive material (104) is configured as a plurality of individual external contact points that protrude from the outer surface (106S) of the encapsulation (106). [8] The chip package (200) according to claim 7, wherein the majority of the individual electrically conductive surfaces are formed of a solderable material. [9] The chip package (200) according to any one of claims 1 to 8, wherein the contact structure (208) comprises a bond wire or a bond tape. [10] The chip package (200) according to any one of claims 1 to 9, wherein the contact structure (208) and / or the contact pad (102C1, 102C2) comprises copper. [11] The chip package (200) according to any one of claims 1 to 10, wherein the contact structure (208) has at least one continuous structure. [12] The chip package (200) according to any one of claims 1 to 10, wherein the contact structure (208) has a plurality of individual contact segments, each of which is exposed on the outer surface (106S). [13] The chip package (200) according to any one of claims 1 to 12, wherein the chip (102) is configured as a power semiconductor chip. [14] The chip package (200) according to any one of claims 1 to 13, wherein the contact pad (102C1, 102C2) to which the contact structure (208) is attached is a source contact pad. [15] The chip package (200) according to claim 14, wherein the source contact pad is located on a first side of the chip (102) and the chip (102) further comprises a drain contact pad located on a second side of the chip (102) opposite the first side. [16] Method for forming a chip package comprising: Forming a contact structure by attaching at least one continuous, longitudinally extending, electrically conductive element to a contact pad of a chip in at least three contact positions, wherein the conductive element bends away from the contact pad between pairs of successive contact positions (610); and partial encapsulation of the contact structure, wherein the contact structure is partially exposed on an outer surface of the encapsulation (620), further comprising: Arranging an electrically conductive material on the outer surface in contact with the exposed contact structure, wherein the encapsulation comprises or consists of a platable molding compound, which has electrically conductive particles dispersed in a dielectric base material, and wherein the electrically conductive material has an electrically conductive layer formed using the electrically conductive particles released from the dielectric base material. [17] The method according to claim 16, wherein the contact structure has four or more contact positions and wherein the exposed parts of the contact structure form a two-dimensional pattern. [18] The method according to one of claims 16 or 17, wherein a two-dimensional part of the outer surface, enclosed by the exposed parts of the contact structure, constitutes at least 50% of the outer surface. [19] The method according to any one of claims 16 to 18, wherein the application of the electrically conductive material comprises the application of a metal layer. [20] The method according to any one of claims 16 to 19, wherein the contact structure comprises a bond wire or a bond tape. [21] The method according to any one of claims 16 to 20, wherein the contact structure and / or the contact pad comprises copper. [22] The method according to any one of claims 16 to 21, wherein the contact structure is a continuous structure. [23] The method according to any one of claims 16 to 22, further comprising: Complete encapsulation of the contact structure and removal of part of the encapsulation, thereby partially exposing the contact structure on the outer surface of the encapsulation. [24] The method according to claim 23, further comprising: Partial removal of the contact structure, thereby dividing the contact structure into a plurality of individual contact segments, each of which is exposed on the outer surface. [25] The method according to any one of claims 16 to 24, wherein the electrically conductive material is configured as a plurality of individual external contact points extending from the outer surface of the encapsulation. [26] The method according to any one of claims 16 to 25, wherein the chip is configured as a power semiconductor chip, and wherein the contact pad to which the contact structure is attached is a source contact pad.