Methods for the production of thermoelectric components and thermoelectric components

Abstract

Method for the production of thermoelectric components, in which one or more electrically connected thermoelectric components are produced on a substrate using photolithographic structuring and layer deposition processes, - wherein a first layer of an electrically conductive material is deposited on a substrate and structured into first electrically conductive connections which, on the one hand, exclusively connect all subsequently realized thermoelectric p-type materials and, on the other hand, exclusively connect all subsequently realized thermoelectric n-type materials to each other, and inlets and outlets for the individual first electrically conductive connections are structured, - a first layer of a structureable material is subsequently applied to the substrate and the structured first electrically conductive connections, wherein a thickness of this first layer of the structureable material is realized that corresponds to the height of the subsequently realized thermoelectric p-type and n-type materials including the height of the structured first layer of the electrically conductive material on the substrate, - then a second layer of an electrically conductive material is applied to the entire first layer of the structureable material and this is structured for the later realization of a second electrically conductive connection between a subsequently realized thermoelectric p-type and a subsequently realized thermoelectric n-type material, - then the first layer of the structurable material is removed at the positions of the subsequently realized thermoelectric p- and n-type materials over and up to the structured first electrically conductive connections, - subsequently, either a thermoelectric p-type material or a thermoelectric n-type material is introduced into the openings located at the positions for the respective thermoelectric p-type or n-type material and up to the top edge of the first layer of the structurable material, and a third layer of an electrically conductive material is deposited onto the surface of the thermoelectric material introduced into the openings, - then the other thermoelectric material is introduced into the openings at the positions for the other thermoelectric material and up to the top edge of the first layer of the structureable material, and the third layer of an electrically conductive material is deposited on the surface of the thermoelectric material introduced into the openings, - a third electrically conductive connection between the structured second and third layers made of the electrically conductive material is subsequently realized by an electrically conductive joining of the second and third layers made of the electrically conductive material, - subsequently, to realize a series circuit between several thermoelectric devices and to realize supply and return lines to the several thermoelectric devices connected in series, at least areas of the first layer of the structureable material between an n-type and a p-type material, which are not connected via the third electrically conductive connection, are removed up to the substrate, - subsequently, a fourth electrically conductive layer is applied to the exposed substrate, which realizes the fourth electrically conductive connection between the n-type and p-type materials not connected via the third electrically conductive connection and the supply and discharge to the multiple thermoelectric components connected in series, - then a second layer of a structurable material is applied to the third electrically conductive connection, - and then, to further realize the series connection between several thermoelectric components, the first electrically conductive connection between all p-type materials and all n-type materials is separated.

Description

[0001] The invention relates to the fields of physics and materials science and concerns a method for manufacturing thermoelectric components, such as can be used, for example, for the production of thermoelectric components, in particular with dimensions in the micrometer range, which can be used for generating electricity from waste heat or for generating cold, for use in microelectronics, in sensor networks or in the Internet of Things (IoT).

[0002] Thermoelectricity refers to the mutual influence of heat and electrical energy and their conversion into one another. The Seebeck effect, also called the thermoelectric effect, the Peltier effect, and the Thomson effect each describe a reversible interaction between the two physical quantities temperature and electricity (Wikipedia, keyword thermoelectricity), for example, a temperature difference that generates an electrical voltage.

[0003] Thermoelectric (TE) devices or components, such as a thermocouple, always consist of a pair of electrical conductors, also called thermoelectric legs or p- and n-legs, made of different materials and connected at one end. As soon as a temperature gradient occurs along one of the electrical conductors, a thermoelectric voltage is generated, which can be measured as an electrical voltage (Wikipedia, keyword thermocouple).

[0004] The ongoing miniaturization of electronic components is leading to an increasing and large demand for thermoelectric devices with dimensions in the micrometer range. Such micro-sized thermoelectric devices or components (µ-TEDs) are increasingly being integrated into microelectronic devices and offer significant advantages over macro-sized coolers and power generators.

[0005] Synthesizing thermoelectric thin films (TEs) using traditional mass production methods like hot pressing or spark plasma sintering (SPS) is challenging. As a result, new synthesis methods such as electrochemical deposition (ECD), physical vapor deposition (PVD), chemical vapor deposition (CVD), and melt injection have been developed. Electrochemical deposition (ECD) of TE thin films, in particular, offers an attractive approach to reducing production costs due to its advantages of low material preparation and equipment costs, as well as a high deposition rate for thick thermoelectric limbs. In this context, micro-TEDs with a large number of TE limb pairs can be fabricated using microelectromechanical systems (MEMS) fabrication methods, primarily involving photolithography, thin-film deposition, and thin-film etching.

[0006] In micro-TEDs with thick-film deposition (e.g., >10 µm) or structures with a high aspect ratio (e.g., >5:1), the height of the thermoelectric legs can exhibit significant unevenness, leading to failure of the upper electrode between the P and N legs. Especially when micro-TEDs consist of hundreds or thousands of P / N leg pairs connected in series, the probability of a faulty connection is considerable. A faulty electrical connection then renders the entire micro-TED defective, resulting in reduced manufacturing reliability and production yield, and consequently, higher product costs.

[0007] Therefore, there is great interest in improved manufacturing processes that can reliably produce high-performance micro-TEDs. For commercial applications, production costs are particularly crucial: the higher the production yield, the more components can be packed into a wafer, and the lower the production costs.

[0008] Methods are known in which a µ-TED with a vertical design has been produced from a combination of electrochemical deposition and photolithography (Snyder, G. et al: (2003). Nature materials, 2(8), 528-531; US ​​6,787,691 B; US 7,098,393 B).

[0009] The major challenge of this manufacturing process is the correct fabrication of the contact layer between the n-type and p-type thermal legs, particularly the upper contact layer in this vertical design. To date, two approaches have been presented for fabricating the upper contact layer: first, a combination of PVD and ECD deposition with photolithography, and second, flip-chip fabrication.

[0010] To obtain freestanding thermo legs, especially without an upper contact layer, a combination of multilayer photolithography and PVD-ECD was used (EP 1981095 A2; Huang, IY et al: (2008) Sensors and Actuators A: Physical, 148(1), 176-185).

[0011] To increase the mechanical flexibility of µ-TEDs, permanent micro-shaped masks made of photolithographic materials SU8 or PDMS were used to enclose the thermal legs. The upper contact layer can then be produced in subsequent process steps, such as PVD deposition through a shadow mask, or photolithography and ECD. This requires a sufficiently smooth surface, which can be achieved, for example, by chemical-mechanical polishing.

[0012] Another approach to realizing the upper contact layer is the use of a second substrate, which provides the necessary upper contact layer and is connected to the first substrate via flip-chip assembly. In this process, either all p-type and n-type thermocouples are deposited on one substrate (Kim, MY, et al: (2012) Materials Transactions, M2012265; Roth, R. et al: (2014) J. of microelectromechanical systems, 23(4), 961-971), or all p-type thermocouples are deposited on one substrate, while all n-type thermocouples are deposited on the second substrate (Bottner, H. et al: (2004) J. of microelectromechanical systems, 13(3), 414-420).

[0013] In any case, a sufficiently high degree of uniformity in height and surface roughness of the thermo-legs is absolutely essential. This can also be achieved here by chemical-mechanical polishing.

[0014] However, a disadvantage of the known methods for manufacturing µ-TEDs is that they still involve many process steps that are difficult to automate.

[0015] Since a high uniformity of the thermo leg height is required for these processes, further polishing processes must be used, which can also introduce mechanical stresses into the legs or even damage them.

[0016] Even with flip-chip manufacturing using a second substrate with pre-made upper electrodes and applying increased temperature and moderate pressure, sufficient production yield cannot be achieved in mass production, as high accuracy of height and surface roughness of the thermal legs is required here as well, and the thermal legs can be easily damaged even at moderate pressure.

[0017] The object of the present invention is to provide a method for manufacturing thermoelectric components which makes it simple and cost-effective to produce thermoelectric components with high production yield, even in mass production.

[0018] The problem is solved by the invention specified in the claims. Advantageous embodiments are the subject of the dependent claims, and the invention also includes combinations of the individual dependent claims in the sense of an AND conjunction, as long as they are not mutually exclusive.

[0019] In the inventive method for manufacturing thermoelectric components, one or more electrically connected thermoelectric components are produced on a substrate using photolithographic structuring and layer deposition processes. - wherein a first layer of an electrically conductive material is deposited on a substrate and structured into first electrically conductive connections which, on the one hand, exclusively connect all subsequently realized thermoelectric p-type materials and, on the other hand, exclusively connect all subsequently realized thermoelectric n-type materials to each other, and inlets and outlets for the individual first electrically conductive connections are structured, - a first layer of a structureable material is subsequently applied to the substrate and the structured first electrically conductive connections, wherein a thickness of this first layer of the structureable material is realized that corresponds to the height of the subsequently realized thermoelectric p-type and n-type materials including the height of the structured first layer of the electrically conductive material on the substrate, - then a second layer of an electrically conductive material is applied to the entire first layer of the structureable material and this is structured for the later realization of a second electrically conductive connection between a subsequently realized thermoelectric p-type and a subsequently realized thermoelectric n-type material, - then the first layer of the structurable material is removed at the positions of the subsequently realized thermoelectric p- and n-type materials over and up to the structured first electrically conductive connections, - subsequently, either a thermoelectric p-type material or a thermoelectric n-type material is introduced into the openings located at the positions for the respective thermoelectric p-type or n-type material and up to the top edge of the first layer of the structurable material, and a third layer of an electrically conductive material is deposited onto the surface of the thermoelectric material introduced into the openings, - then the other thermoelectric material is introduced into the openings at the positions for the other thermoelectric material and up to the top edge of the first layer of the structureable material, and the third layer of an electrically conductive material is deposited on the surface of the thermoelectric material introduced into the openings, - a third electrically conductive connection between the structured second and third layers made of the electrically conductive material is subsequently realized by an electrically conductive joining of the second and third layers made of the electrically conductive material, - subsequently, to realize a series circuit between several thermoelectric devices and to realize supply and return lines to the several thermoelectric devices connected in series, at least areas of the first layer of the structureable material between an n-type and a p-type material, which are not connected via the third electrically conductive connection, are removed up to the substrate, - subsequently, a fourth electrically conductive layer is applied to the exposed substrate, which realizes the fourth electrically conductive connection between the n-type and p-type materials not connected via the third electrically conductive connection and the supply and discharge to the multiple thermoelectric components connected in series, - then a second layer of a structurable material is applied to the third electrically conductive connection, - and then, to further realize the series connection between several thermoelectric components, the first electrically conductive connection between all p-type materials and all n-type materials is separated.

[0020] Advantageously, the simultaneous production of several thermoelectric components on one substrate is achieved.

[0021] It is also advantageous to carry out photolithographic structuring using materials, masks, exposure and removal of photolithographic material.

[0022] Furthermore, it is advantageous to use a photolithographic material, such as photoresists, as a structurable material.

[0023] Advantageously, electrochemical deposition (ECD), physical vapor deposition (PVD), chemical vapor deposition (CVD) or melt injection processes are used as layer deposition methods, with the p-type and n-type materials being advantageously deposited by electrochemical deposition.

[0024] It is also advantageous if the removal of the structurable material and the electrically conductive material is achieved by means of wet chemical etching.

[0025] It is also advantageous if silicon, aluminum oxide, glass, or polyimide are used as substrate materials.

[0026] It is also advantageous to use electrically conductive materials such as gold, nickel, copper, aluminum or semiconductor materials like Sb2Te3.

[0027] It is also advantageous to use Sb2Te3 as the p-type thermoelectric material and Bi2Te3 as the n-type thermoelectric material.

[0028] It is also advantageous if the thermoelectric materials are manufactured in the form of vertically arranged cubes, cuboids, prisms, truncated pyramids, truncated cones and / or cylinders.

[0029] The thermoelectric components according to the invention, which have been produced according to the inventive method, are arranged electrically in series on a substrate with at least one thermoelectric p-type and one thermoelectric n-type material, each having a three-dimensional shape as a cube, cuboid, prism, truncated pyramid and / or truncated cone, and furthermore an electrically conductive inlet and outlet are provided, which are connected to electrically conductive layer areas on the substrate, and wherein the thermoelectric p-type and n-type materials have a substantially the same electrical and / or thermal resistance.

[0030] It is also advantageous that the dimensions of the thermoelectric p-type and n-type materials can be in the nanometer and / or micrometer to millimeter range, and that all other components of the thermoelectric devices then have dimensions in the same range.

[0031] It is also advantageous if a thermoelectric component is arranged on a substrate, or if there are 2 to 100,000 thermoelectric components per cm². 2 are arranged on a substrate.

[0032] The present invention provides for the first time a method for the production of thermoelectric components, which enables the simple and cost-effective production of thermoelectric components with high production yield, even in mass production.

[0033] This is achieved by the inventive method for manufacturing thermoelectric components, in which one or more electrically connected thermoelectric components are produced on a substrate using photolithographic structuring and layer deposition processes.

[0034] In the inventive method, a first layer of an electrically conductive material is first deposited on a substrate and structured to form a first electrically conductive compound, which on the one hand exclusively structures all subsequently realized thermoelectric p-type materials and on the other hand exclusively structures all subsequently realized thermoelectric n-type materials.

[0035] Silicon, aluminum oxide, glass, and polyimide can advantageously be used as substrate materials.

[0036] Advantageously, electrically conductive materials such as gold, nickel, copper, aluminum or semiconductor materials like Sb2Te3 can be used.

[0037] All electrically conductive materials in the component according to the invention can be made of the same or of different electrically conductive materials.

[0038] Of particular importance in this process step is that all subsequently realized thermoelectric p-type materials on the substrate are electrically connected together via the first electrically conductive connection for p-type materials, and that all subsequently realized thermoelectric n-type materials on the substrate are electrically connected together via the first electrically conductive connection for n-type materials, whereby there is no electrically conductive contact between the thermoelectric n-type and p-type materials via the first electrically conductive connection.

[0039] All electrically conductive connections of the thermoelectric components according to the invention each have inlets and outlets which are structured with the respective electrically conductive layers.

[0040] Well-known thin- and thick-film technologies, such as electrochemical deposition (ECD), physical vapor deposition (PVD), chemical vapor deposition (CVD), or melt injection, can also be used as layer deposition methods.

[0041] Subsequently, a first layer of a structureable material is applied to the substrate and the structured first electrically conductive connections, wherein a thickness of this first layer of the structureable material is realized that corresponds to the height of the subsequently realized thermoelectric p-type and n-type materials including the height of the structured first layer of the electrically conductive material on the substrate.

[0042] The layers produced according to the invention from a structureable material are advantageously photoresists.

[0043] All layers of a structureable material in the component according to the invention can be made of the same or different materials.

[0044] Subsequently, a second layer of an electrically conductive material is applied to the entire first layer of the structureable material, and this layer is structured for the later realization of a second electrically conductive connection between a subsequently realized thermoelectric p-type and a subsequently realized thermoelectric n-type material.

[0045] The structuring is advantageously carried out by means of photolithographic structuring, which includes the known process steps and materials, such as masks, exposure and removal of photolithographic material.

[0046] Both the structurable material and the electrically conductive materials can advantageously be removed by wet chemical etching.

[0047] Subsequently, the first layer of the structurable material is removed at the positions of the subsequently realized thermoelectric p- and n-type materials over and up to the structured first electrically conductive connections on the substrate.

[0048] Subsequently, either a thermoelectric p-type material or a thermoelectric n-type material is introduced into the openings located at the positions for the respective thermoelectric p-type or n-type material and up to the top edge of the first layer of the structureable material, and a third layer of an electrically conductive material is deposited onto the surface of the thermoelectric material introduced into the openings.

[0049] Then, the other thermoelectric material is introduced into the openings at the positions for the other thermoelectric material and up to the top edge of the first layer of the structureable material, and a third layer of an electrically conductive material is deposited on the surface of the thermoelectric material introduced into the openings.

[0050] Advantageously, electrochemical deposition processes are used for the deposition of p-type and n-type materials.

[0051] Advantageously, Sb2Te3 can be used as p-type thermoelectric materials and Bi2Te3 as n-type thermoelectric materials.

[0052] It is also advantageous if the thermoelectric materials are manufactured in the form of vertically arranged cubes, cuboids, prisms, truncated pyramids, truncated cones and / or cylinders.

[0053] The third electrically conductive connection between the structured second and third layers made of the electrically conductive material is subsequently achieved by an electrically conductive joining of the second and third layers made of the electrically conductive material.

[0054] Subsequently, to realize a series connection between several thermoelectric devices and to realize supply and return lines to the several thermoelectric devices connected in series, at least areas of the first layer of the structureable material between an n-type and a p-type material, which are not connected via the third electrically conductive connection, are removed down to the substrate.

[0055] Then, a second layer of a structurable material is applied to the third electrically conductive connection.

[0056] Subsequently, a fourth electrically conductive layer is applied to the exposed substrate, which provides the fourth electrically conductive connection between the n-type and p-type materials not connected via the third electrically conductive connection and the supply and return to the multiple thermoelectric components connected in series.

[0057] The second layer, made of a structurable material, is applied primarily to protect the third electrically conductive connection from the subsequent process steps for removing electrically conductive material.

[0058] And then, to further realize the series connection between several thermoelectric components, the first electrically conductive connection between all p-type materials and all n-type materials is broken.

[0059] According to the invention, a single thermoelectric component can be fabricated on the substrate. Advantageously, however, the simultaneous fabrication of several thermoelectric components on one substrate is achieved. This is of great importance for industrial production, as a large number of components per cm² can be fabricated. 2 , like 10 per cm 2 up to 10,000 per cm 2 , thermoelectric components can be manufactured and completed simultaneously on a substrate.

[0060] This allows an array of thermoelectric components to be produced according to the invention.

[0061] In the thermoelectric components produced according to the invention, at least one thermoelectric p-type and one thermoelectric n-type material, each having a three-dimensional shape as a cube, cuboid, prism, truncated pyramid and / or truncated cone, are electrically connected in series on a substrate.

[0062] Furthermore, according to the invention, an electrically conductive inlet and outlet are provided, which are connected to electrically conductive layer areas on the substrate.

[0063] According to the invention, the thermoelectric p-type and n-type materials are connected to a surface with the structured first layer of an electrically conductive material on the substrate and to a surface opposite this surface with the third layer of an electrically conductive material, which establishes the electrically conductive contact via the third electrically conductive connection between the thermoelectric p-type and n-type material via this surface.

[0064] Furthermore, according to the invention, the thermoelectric p-type and n-type materials have a substantially the same, advantageously the same, electrical and / or thermal resistance.

[0065] Advantageously, the dimensions of the thermoelectric p-type and n-type materials are in the micrometer to millimeter range, and all other components of the thermoelectric devices can then also have dimensions in the same range.

[0066] It is also advantageous if a single thermoelectric device is arranged on a substrate, or if there are 2 to 100,000 thermoelectric devices per cm². 2 are arranged on a substrate.

[0067] Advantages of the method and thermoelectric components according to the invention are particularly the secure electrically conductive connection between the thermoelectric p-type and n-type materials, especially via the third electrically conductive connection, which is not in contact with the substrate.

[0068] This advantage of the invention is achieved in particular by the fact that this third electrically conductive connection is produced while the first layer of a structureable material is still present, and thus the layer deposition can be fully and uniformly realized to create a secure third electrically conductive connection.

[0069] This method according to the invention eliminates the need for subsequent rework for contacting and allows for a high production yield.

[0070] The method according to the invention is also very well suited for use in mass production, which can significantly reduce costs.

[0071] Likewise, the method according to the invention is compatible with the MEMS process.

[0072] The invention will now be explained in more detail using an exemplary embodiment. Example 1

[0073] On a silicon substrate measuring 5 × 5 cm, a 5 µm thick gold layer is deposited as the first layer of an electrically conductive material using physical vapor deposition and electrochemical deposition. Subsequently, the first electrically conductive connections for all thermoelectric n-type and p-type materials to be realized later, as well as the leads and feeders, are structured by etching. Fig. 1)

[0074] Subsequently, a 20 µm thick photoresist layer made of a structureable material is deposited as the first layer on the entire substrate containing the structured, first electrically conductive connections. This is then completely covered with a 100 nm thick gold layer, which serves as the second electrically conductive layer. This second gold layer is also applied using physical vapor deposition (PVD) and subsequently structured by etching. The structuring of the second gold layer is performed to later create a second electrically conductive connection between the thermoelectric p-type and n-type materials to be produced subsequently.

[0075] The photoresist layer is then removed as the first layer of the structureable material at the positions of the subsequently realized 6 thermoelectric p- and n-type materials each, over and up to the structured first and second electrically conductive connections with dimensions 5 × 5 × 20 µm (WxLxH) on the substrate ( Fig. 2).

[0076] Subsequently, Sb2Te3 is introduced as a thermoelectric p-type material by electrochemical deposition into the openings at the positions for the respective thermoelectric p-type material and up to the top edge of the first photoresist layer, and gold is again electrochemically deposited onto the surface of the Sb2Te3 material as a third electrically conductive material ( Fig. 3a).

[0077] The process step is carried out with Bi2Te3 as a thermoelectric n-type material in the openings provided for this purpose, and the surfaces of the Bi2Te3 material are also covered with gold as a third electrically conductive material ( Fig. 3b).

[0078] Subsequently, to realize the third electrically conductive connection by means of electrochemical deposition of gold between the structured second and third layers of gold, an electrically conductive joining of the second and third layers of gold is realized, whereby a p-type material is electrically connected to an n-type material in each case ( Fig. 4).

[0079] Subsequently, to create a series circuit between the 6 thermoelectric components to be realized and to create supply and return lines to the 6 thermoelectric components connected in series, the photoresist layer, as a layer of the structurable material between the n-type and p-type materials not connected via the third electrically conductive connection, is removed down to the substrate, and gold is electrochemically deposited onto the exposed substrate as a fourth electrically conductive layer. Fig. 5).

[0080] Subsequently, a second photoresist layer made of a structurable material is applied to the third electrically conductive connection between the n-type and p-type materials ( Fig. 6) Then, to further realize the series connection between the 6 thermoelectric components, the first electrically conductive connection between all p-type materials and all n-type materials was separated by wet chemical etching ( Fig. 6).

[0081] By the method according to the invention, 6 thermoelectric components according to the invention have been produced, which are electrically connected to each other in series ( Fig. 7a and Fig. 7b).

[0082] The inventive method enables the simple and cost-effective production of thermoelectric components with high production yield, even in mass production. Reference symbol list 1 Thermoelectric component 2 Substrat 3. First layer made of an electrically conductive material and first electrically conductive connection with supply and return lines 4. First layer made of a structurable material 5 second layer made of an electrically conductive material and second electrically conductive connection 6 holes in the first layer of a structurable material above the first electrically conductive connections 7 p-type material in holes in the first layer of a structurable material over the first electrically conductive connections to connect all p-type materials 8. Third layer of an electrically conductive material on the open surface of the p-type material in the hole in the first layer of a structurable material 9 n-type material in holes in the first layer of a structurable material over the first electrically conductive connections to connect all n-type materials 10. Third layer of an electrically conductive material on the open surface of the n-type material in the hole in the first layer of a structurable material 11. Third electrically conductive connection between the second and third layers made of an electrically conductive material 12 holes in the first layer made of a structurable material between n-type and p-type materials 13. Second layer made of a structurable material 14 removed material of the first electrically conductive connections

Claims

[1] Method for the production of thermoelectric devices in which one or more electrically connected thermoelectric devices are produced on a substrate using photolithographic structuring and layer deposition processes, - wherein a first layer of an electrically conductive material is deposited on a substrate and structured into first electrically conductive connections which, on the one hand, exclusively connect all subsequently realized thermoelectric p-type materials and, on the other hand, exclusively connect all subsequently realized thermoelectric n-type materials to each other, and inlets and outlets for the individual first electrically conductive connections are structured, - a first layer of a structureable material is subsequently applied to the substrate and the structured first electrically conductive connections, wherein a thickness of this first layer of the structureable material is realized that corresponds to the height of the subsequently realized thermoelectric p-type and n-type materials including the height of the structured first layer of the electrically conductive material on the substrate, - then a second layer of an electrically conductive material is applied to the entire first layer of the structureable material and this is structured for the later realization of a second electrically conductive connection between a subsequently realized thermoelectric p-type and a subsequently realized thermoelectric n-type material, - then the first layer of the structurable material is removed at the positions of the subsequently realized thermoelectric p- and n-type materials over and up to the structured first electrically conductive connections, - subsequently, either a thermoelectric p-type material or a thermoelectric n-type material is introduced into the openings located at the positions for the respective thermoelectric p-type or n-type material and up to the top edge of the first layer of the structurable material, and a third layer of an electrically conductive material is deposited onto the surface of the thermoelectric material introduced into the openings, - then the other thermoelectric material is introduced into the openings at the positions for the other thermoelectric material and up to the top edge of the first layer of the structureable material, and the third layer of an electrically conductive material is deposited on the surface of the thermoelectric material introduced into the openings, - a third electrically conductive connection between the structured second and third layers made of the electrically conductive material is subsequently realized by an electrically conductive joining of the second and third layers made of the electrically conductive material, - subsequently, to realize a series circuit between several thermoelectric devices and to realize supply and return lines to the several thermoelectric devices connected in series, at least areas of the first layer of the structureable material between an n-type and a p-type material, which are not connected via the third electrically conductive connection, are removed up to the substrate, - subsequently, a fourth electrically conductive layer is applied to the exposed substrate, which realizes the fourth electrically conductive connection between the n-type and p-type materials not connected via the third electrically conductive connection and the supply and discharge to the multiple thermoelectric components connected in series, - then a second layer of a structurable material is applied to the third electrically conductive connection, - and then, to further realize the series connection between several thermoelectric components, the first electrically conductive connection between all p-type materials and all n-type materials is separated. [2] Method according to claim 1, wherein the simultaneous production of several thermoelectric devices on a substrate is realized. [3] Method according to claim 1, wherein the photolithographic structuring is carried out by means of materials, masks, exposure and removal of photolithographic material. [4] Method according to claim 1, wherein a photolithographic material, such as photoresists, is used as the structurable material. [5] Method according to claim 1, wherein the layer deposition method used is electrochemical deposition (ECD), physical vapor deposition (PVD), chemical vapor deposition (CVD) or melt injection. [6] Method according to claim 5, wherein the p-type and n-type materials are deposited by electrochemical deposition. [7] Method according to claim 1, wherein the removal of the structurable material and the electrically conductive material is carried out by means of wet chemical etching. [8] Method according to claim 1, wherein silicon, aluminium oxide, glass, polyimide are used as substrate materials. [9] Method according to claim 1, wherein the electrically conductive materials used are gold, nickel, copper, aluminium or semiconductor materials such as Sb2Te3. [10] Method according to claim 1, wherein Sb2Te3 is used as the p-type thermoelectric material and Bi2Te3 as the n-type thermoelectric material. [11] Method according to claim 1, wherein the thermoelectric materials are produced in the form of vertically arranged cubes, cuboids, prisms, truncated pyramids, truncated cones and / or cylinders. [12] Thermoelectric devices manufactured according to a method according to claim 1, wherein at least one thermoelectric p-type and one thermoelectric n-type material, each having a three-dimensional shape as a cube, cuboid, prism, truncated pyramid and / or truncated cone, are electrically connected in series on a substrate, and furthermore an electrically conductive inlet and outlet are provided which are connected to electrically conductive layer regions on the substrate, and wherein the thermoelectric p-type and n-type materials have substantially the same electrical and / or thermal resistance. [13] Thermoelectric devices according to claim 12, wherein the dimensions of the thermoelectric p-type and n-type materials can be in the nanometer and / or micrometer to millimeter range and all other components of the thermoelectric devices then have dimensions in the same ranges. [14] Thermoelectric devices according to claim 12, wherein a thermoelectric device is arranged on a substrate, or 2 to 100,000 thermoelectric devices per cm² 2 are arranged on a substrate.

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