METHOD FOR MANUFACTURING AN ELECTRONIC COMPONENT

Abstract

A method for manufacturing an electronic component comprises steps for providing a substrate with a top surface and a semiconductor chip arranged on the top surface, for forming a photoresist body on the top surface of the substrate by a forming process in a mold of a forming tool, wherein the semiconductor chip is embedded in the photoresist body, for exposing at least a part of the photoresist body and for removing a part of the photoresist body by a development process.

Description

[0001] The present invention relates to a method for producing an electronic component.

[0002] Photoresist can be applied by spin coating or spraying. Laminating dry photoresist is also known. In these processes, the topography of the photoresist approximately replicates the covered topography.

[0003] One object of the present invention is to provide a method for producing an electronic component. This object is achieved by a method having the features of the independent patent claim. Various further developments are specified in the dependent claims.

[0004] A method for producing an electronic component comprises steps of providing a carrier having a top side and a semiconductor chip arranged on the top side, forming a resist body made of a photoresist on the top side of the carrier by a molding process in a mold of a molding tool, wherein the semiconductor chip is embedded in the resist body, exposing at least a part of the resist body and removing a part of the resist body by a development process.

[0005] This process advantageously enables the production of a resist body with a high thickness. A low-viscosity photoresist can also be used. The resist body can advantageously be formed with a top surface with good flatness. The shape of the top surface of the resist body is advantageously largely independent of the shape and height of the semiconductor chip embedded in the resist body.

[0006] In one embodiment of the method, forming the resist body comprises curing the resist body. Curing takes place in the shape of the mold. This advantageously allows for the use of a photoresist with low viscosity. This takes advantage of the fact that the shape of the mold prevents any change in the resist body's shape until the resist body cures.

[0007] In one embodiment of the method, the exposure of the resist body takes place in the mold. This advantageously makes the method particularly simple and efficient to implement.

[0008] In one embodiment of the method, a release film is arranged on a wall of the mold facing the semiconductor chip. Advantageously, the release film enables particularly simple and damage-free removal of the resist body from the mold.

[0009] In one embodiment of the method, the mold has a lower height in a region above the semiconductor chip than in a region adjacent to the semiconductor chip. This advantageously allows for compensation for material shrinkage of the resist body.

[0010] In one embodiment of the method, the mold is formed at least partially from an elastomer. Advantageously, the mold can thus be transparent to the light used to expose the coating body.

[0011] In one embodiment of the method, the resist body is formed with a thickness of more than 100 µm, measured perpendicular to the top side of the carrier, and in one embodiment, even with a thickness of more than 120 µm. Advantageously, the method thus enables the embedding of a semiconductor chip with a high height into the resist body.

[0012] In one embodiment of the method, removing part of the resist body creates a free space adjacent to the semiconductor chip. The method comprises a further step of arranging a plastic material in the free space, wherein the semiconductor chip is at least partially embedded in the plastic material. The plastic material can, for example, form a housing for the electronic component obtainable by the method. In this case, the method advantageously enables the production of a housing with particularly compact dimensions.

[0013] In one embodiment of the method, removing part of the resist body creates a free space adjacent to the semiconductor chip. The method comprises a further step of disposing a wavelength-converting material in the free space. Advantageously, the method can enable particularly precise positioning of the wavelength-converting material. The well-defined shape of the resist body can also enable the wavelength-converting material to be disposed with a precisely predeterminable thickness.

[0014] In one embodiment of the method, the semiconductor chip is completely exposed by removing part of the resist body. The semiconductor chip is then embedded in the wavelength-converting material. The wavelength-converting material itself can form a housing for the electronic component obtainable by the method. As a result, the electronic component obtainable by the method can advantageously have particularly compact external dimensions.

[0015] In one embodiment of the method, this includes a further step for completely removing the resist body. This method step can also be used, for example, to separate several electronic components manufactured in parallel.

[0016] In one embodiment of the method, at least part of the resist body forms a housing for the electronic component. This method variant advantageously enables particularly simple and cost-effective production of the electronic component.

[0017] In one embodiment of the method, the photoresist comprises a silicone, an epoxy, an acrylate, or a hybrid of these materials. In this case, the resist body formed from the photoresist may be suitable, for example, for use as a housing for the electronic component.

[0018] In one embodiment of the method, the semiconductor chip is an optoelectronic semiconductor chip, in particular a light-emitting diode chip. The electronic component obtainable by the method is then an optoelectronic component. Advantageously, the method enables the production of an optoelectronic component with particularly compact external dimensions.

[0019] In one embodiment of the method, the semiconductor chip is embedded in the resist body together with other semiconductor chips. This advantageously enables the parallel production of a plurality of similar electronic components in common processing steps.

[0020] The above-described properties, features and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more clearly understandable in connection with the following description of the embodiments, which are explained in more detail in connection with the drawings. In each case, in a schematic representation Fig. 1 is a sectional side view of a molding tool for forming a resist body from a photoresist; Fig. 2 a sectional side view of the resist body formed in the mold with embedded semiconductor chips; Fig. 3 a sectional side view of a resist body formed in a mold during in-situ exposure; Fig. 4 a semiconductor chip arranged on a carrier; Fig. 5 the semiconductor chip after embedding in a resist body; Fig. 6 the resist body after exposure and removal of part of the resist body; Fig. 7 the lacquer body with a wavelength-converting material arranged in a free space; Fig. 8 an electronic component obtained after complete removal of the resist body; Fig. 9 the paint body with a plastic material arranged in a free space; Fig. 10 the resist body with a wavelength-converting material arranged over the plastic material and the semiconductor chip; Fig. 11 an electronic component obtained after complete removal of the resist body; Fig. 12 a paint body with a free space formed by removing a part of the paint body; Fig. 13 the paint body with a plastic material arranged in the free space; Fig. 14 the plastic material with the semiconductor chip embedded therein after complete removal of the resist body, by which a further free space has been formed; Fig. 15 an electronic component obtained after arranging a wavelength-converting material in the further free space; Fig. 16 an optoelectronic semiconductor chip arranged on a carrier; Fig. 17 the semiconductor chip after embedding in a resist body; Fig. 18 the paint body with a free space formed by removing a part of the paint body; Fig. 19 the lacquer body with a wavelength-converting material arranged in the free space; Fig. 20 an electronic component obtained after complete removal of the resist body; and Fig. 21 another variant of a mold used to form a paint body.

[0021] Fig. 1 shows a schematic sectional side view of a first example of a molding tool 200 that can be used in a method proposed by the present invention for manufacturing an electronic component. The molding tool 200 can also be referred to as a mold tool. The molding tool 200 comprises a first tool part 210 and a second tool part 220. The first tool part 210 and the second tool part 220 can be brought together such that a cavity referred to as a mold 250 is enclosed between the first tool part 210 and the second tool part 220. The mold 250 can also be referred to as a mold.

[0022] The mold 200 is intended for carrying out a molding process. In Fig. In the case shown in Figure 1, the molding process can be compression molding, for example. In other variants, however, other molding processes can also be used, such as transfer molding or injection molding.

[0023] A carrier 150 is arranged on a side of the first tool part 210 facing the mold 250. The carrier 150 can also be referred to as a substrate. The carrier 150 has a substantially flat upper side 151 oriented toward the mold 250.

[0024] A plurality of semiconductor chips 100 are arranged on the upper side 151 of the carrier 150. The semiconductor chips 100 can be attached to the upper side 151 of the carrier 150, for example, by means of an adhesive 160. The adhesive 160 can be arranged either only beneath the semiconductor chips 100 or over the entire surface of the upper side 151 of the carrier 150. The semiconductor chips 100 are generally already attached to the carrier 150 before it is arranged on the first tool part 210. The semiconductor chips 100 each have a top side 101 and a bottom side 102 opposite the top side 101. The bottom sides 102 of the semiconductor chips 100 are oriented toward the top side 151 of the carrier 150, such that the top sides 101 of the semiconductor chips 100 face the mold 250.

[0025] The semiconductor chips 100 can be designed, for example, as optoelectronic semiconductor chips and can be provided, for example, for emitting or detecting light. For example, the semiconductor chips 100 can be designed as light-emitting diode chips.

[0026] The number of semiconductor chips 100 arranged on the top side 151 of the carrier 150 can be chosen arbitrarily. It is even possible for only a single semiconductor chip 100 to be provided. The semiconductor chips 100 can, for example, be arranged in a regular matrix arrangement on the top side 151 of the carrier 150.

[0027] The semiconductor chips 100 have a thickness 103 measured between their top side 101 and their bottom side 102. The thickness 103 can, for example, be in the range of a few 10 µm and can, for example, be 100 µm, 120 µm, or even more.

[0028] A release film 240 is arranged on a wall 230 of the second tool part 220 of the mold 200 facing the mold 250. The release film 240 can also be referred to as a release film. In some variants of the described manufacturing method, the release film 240 can be omitted.

[0029] On a side of the release film 240 facing the mold 250 on the wall 230 of the second tool part 220, a quantity of photoresist 350 has been arranged. In this description, photoresist 350 refers to any material that is suitable as a mold material for use in a molding process and can be modified by exposure and development, i.e., is photostructured. A distinction is made between negative photoresists and positive photoresists. With negative photoresists, exposure causes the exposed areas to crosslink, so that unexposed areas can be dissolved in a subsequent development process, leaving the exposed areas behind. With positive photoresists, previously solidified areas are made soluble again by exposure and can then be dissolved in a development process, while the unexposed areas remain.The photoresist 350 can, for example, comprise a silicone, an epoxy, an acrylate, or hybrids of these materials. The photoresist 350 can have a low, medium, or high viscosity. The photoresist 350 can also be in solid form, for example, in the form of a resist film or resist granules.

[0030] Fig. 2 shows a schematic sectional side view of a resist body 300 formed from the photoresist 350 on the upper side 151 of the carrier 150 by the molding process in the mold 250 of the molding tool 200. The semiconductor chips 100 located on the upper side 151 of the carrier 150 have been embedded in the resist body 300.

[0031] The coating body 300 has an upper side 301 facing away from the upper side 151 of the carrier 150. The upper side 301 can be very flat.

[0032] A thickness 303 measured between the top side 301 of the resist body 300 and a bottom side of the resist body 300 facing the top side 151 of the carrier 150 is greater than the thickness 103 of the semiconductor chips 100. The thickness 303 of the resist body 300 can, for example, be more than 100 µm or even more than 120 µm. For example, the thickness 303 of the resist body 300 can be 150 µm.

[0033] Fig. 2 shows the carrier 150 and the lacquer body 300 formed on the upper side 151 of the carrier 150 after removal from the mold 200. The release film 240 arranged on the wall 230 of the second tool part 220 may have facilitated removal in that the upper side 301 of the lacquer body 300 could be easily detached from the release film 240. The release film 240 can be omitted if the upper side 301 of the lacquer body 300 can be detached from the wall 230 of the second tool part 220 sufficiently easily and without damage.

[0034] A processing step for curing the paint body 300 may have already taken place before the carrier 150 and the paint body 300 are removed from the mold 200. The curing of the paint body 300 may, for example, have been assisted by a heat treatment. After removal from the mold 200, processing steps for curing the paint body 300 may also take place, for example, also by a thermal treatment.

[0035] Based on the Fig. 2, further process steps can be carried out, for example those described below using the Fig. 4 to 20. In each case, at least a portion of the resist body 300 is exposed to light and a portion of the resist body 300 is subsequently removed by a development process.

[0036] Fig. 3 shows a schematic sectional side view of an alternative variant for forming the paint body 300 in another variant of the mold 200.

[0037] In the example of Fig. 3, a substrate 170 is arranged on the top side 151 of the carrier 150 and secured by means of the adhesive 160. The substrate 170 can be a lead frame, for example. The substrate 170 has a top side 171 facing away from the top side 151 of the carrier 150. The semiconductor chips 100 are arranged and secured on the top side 171 of the substrate 170. The semiconductor chips 100 can again be optoelectronic semiconductor chips or other semiconductor chips. In the example shown, the semiconductor chips 100 are electrically conductively connected to sections of the substrate 170 via bond wires 175. However, the semiconductor chips 100 can also be electrically contacted in other ways.

[0038] In Fig. In the example shown in Figure 3, the molding tool 200 has an opening through which the photoresist 350 can be supplied to form the resist body 300. The resist body 300 can be formed, for example, by vacuum injection molding. Again, the resist body 300 is formed with a thickness 303 sufficient to embed the semiconductor chips 100 in the resist body 300.

[0039] After forming the coating body 300, a process step for curing the coating body 300 can be performed in the mold 250 of the molding tool 200. This process step can again include a thermal treatment.

[0040] Afterwards, the Fig. 3, a part 330 of the resist body 300 can be exposed while still in the mold 250 of the mold 200. For this purpose, in the example shown, light 370 can be radiated from outside the mold 200 through the second tool part 220 of the mold 200 into the mold 250. The second tool part 220 is at least partially transparent to the light 370. In the Fig. 3, the second tool part 220 comprises an outer first section 250 and an inner second section 260 having the wall 230. The first section 250 may, for example, comprise quartz. The second section 260 may, for example, comprise an elastomer, such as PDMS. A release film 240 is shown in Fig. 3 not shown, but may be present optionally.

[0041] The light 370 is radiated onto the resist body 300 such that only part 330 of the resist body 300 is exposed, while another part 340 of the resist body 300 is not exposed. For this purpose, a shadow mask can be used, for example. It is also conceivable that the second tool part 220 of the mold 200 itself serves as a shadow mask.

[0042] Depending on whether the photoresist 350 used for the resist body 300 is a positive photoresist or a negative photoresist, the exposed part 330 or the unexposed part 340 of the resist body 300 can then be removed in a development process as the part 310 to be removed. Fig. In the example shown in Figure 3, the photoresist 350 is a negative photoresist, so that the unexposed part 340 of the resist body 300 can be removed as the part 310 to be removed. In the example shown, the part 310 to be removed is formed by parts of the resist body 300 arranged over the top sides 101 of the semiconductor chips 100. This allows the top sides 101 of the semiconductor chips 100 to be exposed in a subsequent development process. The exposed part 330 of the resist body 300 can form, as the remaining part 320, a housing for the electronic components obtainable by the manufacturing method.

[0043] The Fig. 3 described process steps can be combined with the following steps based on the Fig. 4 to 20. In this case, the formation of the lacquer body 300 takes place in the Fig. 3. The exposure of parts of the resist body 300 also takes place in the mold 250 of this mold 200. Only then are the carrier 150 and the resist body 300 formed on the upper side 151 of the carrier 150 removed from the mold 200.

[0044] Based on the Fig. 4 to 20, various variants of a method for producing an electronic component 10 are described below. These method variants can each be the ones described above with reference to the Fig. 1 to 3 described process steps.

[0045] Fig. 4 shows a schematic sectional side view of the carrier 150 with one of the semiconductor chips 100 arranged on the upper side 151 of the carrier 150. In the illustration of Fig. 5, the semiconductor chip 100 has been embedded in the resist body 300 in one of the ways described above. A portion of the resist body 300 adjacent to the semiconductor chip 100 forms the portion 310 to be removed, while the remaining portions of the resist body 300 form the remaining portions 320.

[0046] In the presentation of the Fig. 6, the portion 310 of the resist body 300 to be removed has been removed, forming a free space 315 in the remaining portion 320 of the resist body 300. The removal of the portion 310 to be removed is performed by exposing either the portion 310 to be removed or the remaining portion 320 and by subsequently removing the portion 310 to be removed in a development process. The exposure of the resist body 300 can be performed in the mold 250 of the molding tool 200 or outside the molding tool 200.

[0047] The semiconductor chip 100 arranged on the upper side 151 of the carrier 150 is completely exposed in the free space 315. Both the upper side 101 and the side flanks of the semiconductor chip 100 are no longer covered by the resist body 300.

[0048] Fig. Figure 7 shows a schematic sectional side view of one of the representations of the Fig. 6 temporally subsequent processing stage. A wavelength-converting material 400 has been arranged in the free space 315. The semiconductor chip 100 has been embedded in the wavelength-converting material 400, so that both the top side 101 of the semiconductor chip 100 and the side flanks of the semiconductor chip 100 are covered by the wavelength-converting material 400. The wavelength-converting material 400 is designed to at least partially convert light emitted by the semiconductor chip 100 into light of a different wavelength.

[0049] Fig. Figure 8 shows a schematic sectional side view of an electronic component 10 obtained by further processing. Starting from the Fig. In the processing state shown in Figure 7, the previously remaining part 320 of the resist body 300 has been removed. As a result, only the semiconductor chip 100 embedded in the wavelength-converting material 400 remains on the upper side 151 of the carrier 150. The wavelength-converting material 400 forms a housing 500 of the electronic component 10. The electronic component 10 can still be detached from the upper side 151 of the carrier 150 in a subsequent processing step.

[0050] Fig. 9 shows a schematic sectional side view of one of the representations of the Fig. 6 subsequent processing stage in an alternative variant of the described manufacturing process. Based on the Fig. In the processing stage shown in Figure 6, a plastic material 450 has been arranged in the free space 315. The semiconductor chip 100 has been at least partially embedded in the plastic material 450. In the example shown, the side flanks of the semiconductor chip 100 have been covered by the plastic material 450, while the top side 101 of the semiconductor chip 100 has not been covered by the plastic material 450.

[0051] The plastic material 450 can comprise, for example, an epoxy or a silicone. Additionally, the plastic material 450 can comprise, for example, embedded particles, such as embedded scattering particles. The embedded particles can comprise, for example, TiOx. The plastic material 450 can thus form a reflector, which reflects light emitted by the semiconductor chip 100 or light incident from outside onto the electronic component 10 obtainable by the method.

[0052] The arrangement of the plastic material 450 in the free space 315 can be carried out, for example, by a casting process.

[0053] Fig. 10 shows one of the representations of the Fig. 9 temporally subsequent processing stage. In the part of the free space 315 remaining after the introduction of the plastic material 450, a wavelength-converting material 400 has been arranged, which covers the upper side 101 of the semiconductor chip 100. The wavelength-converting material 400 can be formed as described above with reference to the Fig. 7 and Fig. 8 described.

[0054] Fig. 11 shows a schematic sectional side view of the electronic component 10 obtained by removing the previously remaining parts 320 of the resist body 300. The plastic material 450 and the wavelength-converting material 400 together form the housing 500 of this variant of the electronic component 10. The electronic component 10 can in turn be detached from the upper side 151 of the carrier 150 in a subsequent process step.

[0055] Fig. 12 shows a schematic sectional side view of one of the representations of the Fig. 5 temporally subsequent processing stage during the implementation of a further variant of the described manufacturing method. In this variant, the part 310 of the resist body 300 to be removed comprises only parts of the resist body 300 adjacent to the side flanks of the semiconductor chip 100, while the remaining part 320 also comprises the part of the resist body 300 arranged on the upper side 101 of the semiconductor chip 100. Accordingly, the free space 315 formed by removing the part 310 of the resist body 300 in the Fig. 12, only the side flanks of the semiconductor chip 100 are exposed, while the top side 101 of the semiconductor chip 100 is still covered by the remaining part 320 of the resist body 300.

[0056] Fig. 13 shows one of the representations of the Fig. 12 subsequent processing stage. In the free space 315, a plastic material 450 has been arranged, which can be designed as described above with reference to the Fig. 9. The plastic material 450 completely fills the previously formed free space 315.

[0057] Fig. 14 shows a schematic sectional side view of one of the representations of the Fig. 13 chronologically subsequent processing stage. The previously remaining parts 320 of the resist body 300 have been completely removed. As a result, an additional free space 325, bordered by the plastic material 450, has been formed on the top side 101 of the semiconductor chip 100. The additional free space 325 exposes the top side 101 of the semiconductor chip 100.

[0058] Fig. 15 shows one of the representations of the Fig. 14 chronologically subsequent processing stage. A wavelength-converting material 400, which can again be configured as described above, has been arranged in the additional free space 325 on the top side 101 of the semiconductor chip 100. The plastic material 450 and the wavelength-converting material 400 together form the housing 500 of the resulting electronic component 10. The electronic component 10 can still be detached from the top side 151 of the carrier 150 in a subsequent step.

[0059] In the cases described above based on the Fig. In the variants of the manufacturing method described in Figures 4 to 15, the semiconductor chip 100 can, for example, be a light-emitting diode chip designed as a flip chip.

[0060] Fig. Figure 16 shows a schematic sectional side view of the semiconductor chip 100 arranged on the top side 151 of the carrier 150 in a further variant of the manufacturing method. In this variant of the manufacturing method, the semiconductor chip 100 can be designed, for example, as a light-emitting diode chip, which has an electrical contact surface on its top side 101 and on its bottom side 102. The semiconductor chip 100 is then designed to emit light on its top side 101.

[0061] Fig. 17 shows a schematic sectional side view of the semiconductor chip 100 after the formation of the resist body 300. The semiconductor chip 100 is embedded in the resist body 300. A part of the resist body 300 covering the top side 101 of the semiconductor chip 100 forms the part 310 to be removed. The remaining parts of the resist body 300 form the remaining part 320.

[0062] Fig. 18 shows one of the representations of the Fig. 17 shows the subsequent processing stage after the removal of the part 310 to be removed of the resist body 300. This was done in the manner already described by exposing either the part 310 to be removed or the remaining part 320 and by dissolving the part 310 to be removed by means of a development process. In this process, a free space 315 adjacent to the top side 101 of the semiconductor chip 100 was formed in the resist body 300.

[0063] Fig. 19 shows a schematic sectional side view of one of the representations of the Fig. 18 temporally subsequent processing stage. A wavelength-converting material 400 has been arranged in the free space 315, which can again be formed in the manner already described above. The wavelength-converting material 400 expediently completely fills the free space 315.

[0064] Fig. 20 shows a schematic sectional side view of one of the representations of the Fig. 19 temporally subsequent processing stage. By completely removing the previously remaining parts 320 of the resist body 300, an electronic component 10 has been formed. This can still be detached from the top side 151 of the carrier 150 in a subsequent processing step. The electronic component 10 comprises the semiconductor chip 100 and the wavelength-converting material 400 arranged on the top side 101 of the semiconductor chip 100.

[0065] Fig.21 shows, in a highly schematic representation, another variant of the molding tool 200 used in the described methods. In this variant of the molding tool 200, the wall 230 of the second tool part 220 facing the mold 250 has a projection 270. The projection 270 is arranged above the upper side 101 of the semiconductor chip 100 arranged in the mold 250, which causes the mold 250 to have a lower height 253 in a first region 260 above the semiconductor chip 100 than in a second region 270 next to the semiconductor chip 100. If the resist body 300 formed in the mold 250 shrinks due to cooling after the formation of the resist body 300, this shrinkage will be greater in the second region 270 than in the first region 260.The deviation of the height 253 between the first region 260 and the second region 270 is dimensioned such that it compensates for the different degrees of shrinkage of the lacquer body 300, so that the upper side 301 of the lacquer body 300 is as flat as possible after its shrinkage.

[0066] If a plurality of semiconductor chips 100 are arranged in the molding tool 200 and embedded together in the resist body 300, the second tool part 220 expediently has a projection 270 above each semiconductor chip 100.

[0067] The invention has been illustrated and described in more detail using the preferred embodiments. However, the invention is not limited to the disclosed examples. Other variations may be devised by those skilled in the art. LIST OF REFERENCE SYMBOLS 10 electronic component 100 semiconductor chips 101 Top 102 subpage 103 thickness 150 carriers 151 Top 160 Adhesive 170 Substrat 171 top 175 bonding wire 200 mold tools 210 first tool part 220 second tool part 230 wall 240 release film 250 first section 260 second section 270 lead 250 Shape 253 height 260 first area 270 second area 300 paint bodies 301 top 303 thickness 310 part to be removed 315 open space 320 remaining part 325 additional open space 330 exposed part 340 unexposed part 350 photoresist 370 light 400 wavelength converting material 450 plastic material 500 housings

Claims

[1] Method for producing an electronic component (10) comprising the following steps: - Providing a carrier (150) having a top side (151) and a semiconductor chip (100) arranged on the top side (151); - forming a resist body (300) from a photoresist (350) on the upper side (151) of the carrier (150) by a molding process in a mold (250) of a molding tool (200), wherein the semiconductor chip (100) is embedded in the resist body (300); - exposing at least a part (330) of the resist body (300); - removing a part (310) of the paint body (300) by a development process. [2] Method according to claim 1, wherein the formation of the paint body (300) comprises curing the paint body (300), wherein the curing takes place in the mold (250) of the molding tool (200). [3] Method according to one of the preceding claims, wherein the exposure of the lacquer body (300) takes place in the mold (250) of the molding tool (200). [4] Method according to one of the preceding claims, wherein a release film (240) is arranged on a wall (230) of the molding tool (200) facing the semiconductor chip (100). [5] Method according to one of the preceding claims, wherein the mold (250) has a lower height (253) in a region (260) above the semiconductor chip (100) than in a region (270) next to the semiconductor chip (100). [6] Method according to one of the preceding claims, wherein the molding tool (200) is formed at least in sections from an elastomer. [7] Method according to one of the preceding claims, wherein the lacquer body (300) is formed with a thickness (303) measured perpendicular to the upper side (151) of the carrier (150) of more than 100 µm, in particular with a thickness (303) of more than 120 µm. [8] Method according to one of the preceding claims, wherein by removing the part (310) of the resist body (300) a free space (315, 325) adjacent to the semiconductor chip (100) is formed, the method comprising the following further step: - Arranging a plastic material (450) in the free space (315, 325), wherein the semiconductor chip (100) is at least partially embedded in the plastic material (450). [9] Method according to one of the preceding claims, wherein by removing the part (310) of the resist body (300) a free space (315, 325) adjacent to the semiconductor chip (100) is formed, the method comprising the following further step: - arranging a wavelength-converting material (400) in the free space (315, 325). [10] Method according to claim 9, wherein the semiconductor chip (100) is completely exposed by removing the part (310) of the resist body (300), wherein the semiconductor chip (100) is embedded in the wavelength converting material (400). [11] A method according to any one of the preceding claims, wherein the method comprises the following further step: - complete removal of the paint body (300). [12] Method according to one of the preceding claims, wherein at least a part of the lacquer body (300) forms a housing (500) of the electronic component (10). [13] The method of claim 12, wherein the photoresist (350) comprises a silicone, an epoxy, an acrylate, or a hybrid of these materials. [14] Method according to one of the preceding claims, wherein the semiconductor chip (100) is an optoelectronic semiconductor chip, in particular a light-emitting diode chip. [15] Method according to one of the preceding claims, wherein the semiconductor chip (100) is embedded together with further semiconductor chips (100) in the resist body (300).

Images