Intelligent forward polarity protection circuit with separate reverse polarity protection circuit

Abstract

The invention relates to a reverse polarity protected electronic circuit with a negative and a positive supply voltage line and with an electrical application circuit. The electrical application circuit has a positive and a negative power supply terminal. The reverse polarity protected electronic circuit comprises a reverse polarity protection circuit (1). The reverse polarity protection circuit (1) has a first and a second N-channel enhancement transistor as part of a reverse polarity protection transistor group (17). The first and second N-channel enhancement transistors are electrically connected in anti-series via a center terminal (86) of the reverse polarity protection circuit (1). The reverse polarity protection circuit (1) includes a control device (4) which is connected to the positive and negative supply voltage lines.Only when connected with the correct polarity does the control device (4) switch the first and second N-channel enhancement transistors of the reverse polarity protection transistor group (17) on. The control device (4) includes its own additional control reverse polarity protection circuit (81) which prevents damage to the control device (4) if connected with incorrect polarity, so that the control device (4) does not switch on the first and second N-channel enhancement transistors if connected with incorrect polarity.

Description

Field of invention

[0001] The invention relates to a reverse polarity protected electronic circuit having a negative and a positive supply voltage line and having an electrical application circuit.

[0002] The electrical application circuit has a positive and a negative power supply terminal. The reverse polarity protected electronic circuit comprises a reverse polarity protection circuit (1). The reverse polarity protection circuit (1) has a first and a second N-channel enhancement transistor as part of a reverse polarity protection transistor group (17). The first and second N-channel enhancement transistors are electrically connected to one another in anti-serial via a center terminal (86) of the reverse polarity protection circuit (1). The reverse polarity protection circuit (1) comprises a control device (4) which is connected to the positive and negative supply voltage lines. The control device (4) only switches the first and second N-channel enhancement transistors of the reverse polarity protection transistor group (17) into the conductive state when the polarity is correct.The control device (4) comprises its own additional control polarity reversal protection circuit (81) which prevents damage to the control device (4) in the event of incorrect polarity connection, so that the control device (4) does not switch on the first and second N-channel enhancement transistors in the event of incorrect polarity connection.

[0003] The invention thus relates to a reverse polarity protected electronic circuit comprising a negative supply voltage line at a reference potential and a positive supply voltage line at a positive supply voltage potential relative to the reference potential, and comprising an electrical application circuit. The electrical application circuit has a positive and a negative power supply terminal. The negative supply voltage line is connected to the one negative power supply terminal. The reverse polarity protected electronic circuit comprises a reverse polarity protection circuit (1), wherein the reverse polarity protection circuit (1) is connected between the positive supply voltage line and the positive power supply terminal of the electrical application circuit.The reverse polarity protection circuit (1) has a first and a second N-channel enhancement transistor of a reverse polarity protection transistor group (17) as part of a reverse polarity protection transistor group (17) of the reverse polarity protection circuit (1). The document presented here defines an N-channel enhancement transistor as a non-normally conducting, but rather a normally off, enhancement-mode field-effect transistor. The first and second N-channel enhancement transistors are electrically connected to one another in anti-serial in the reverse polarity protection transistor group (17) via a center terminal of the reverse polarity protection circuit (1). In addition to the reverse polarity protection transistor group (17), the reverse polarity protection circuit (1) comprises a control device (4) connected to the positive and negative supply voltage lines.When connected with correct polarity, the control device (4) generates a potential of the gate terminal of the first and second N-channel enhancement transistors of the reverse polarity protection transistor group (17) above the potential of the positive supply voltage line and above the potential of the center terminal of the reverse polarity protection circuit (1). The control device (4) comprises its own additional control reverse polarity protection circuit (81), so that, when the polarity is incorrect, the control device firstly raises the potential of the gate terminal of the first and second N-channel enhancement transistors neither above the potential of the positive supply voltage line nor above the potential of the center terminal of the reverse polarity protection circuit. General introduction

[0004] The document presented here refers in particular to the technical solution of the problem to meet the requirements of the regulations • ISO 7637-1 - „Road vehicles - Electrical disturbance from conduction and coupling - Part 1: Definitions and general considerations“ (Stand:01-10.2015) Third edition • ISO 7637-2:2011-03 - „Road vehicles - Electrical disturbance from conduction and coupling - Part 2: Electrical transient conduction along supply lines only“ • ISO 7637-3:2016 -„Road vehicles - Electrical disturbance from conduction and coupling - Part 3: Electrical transient transmission by capacitive and inductive coupling via lines other than suppply lines“ (3. Edition) • ISO 7637-3 Techn. corrigendum -only for info- „Road vehicles - Electrical disturbance from conduction and coupling“ und der • DIN-Norm DIN 31000 (VDE 1000):2017-04 - „Allgemeine Leitsätze für das sicherheitsgerechte Gestalten von Produkten“ in Fahrzeugen.

[0005] The document presented here deals, among other things, with supply networks in automobiles and the use of electronic reverse polarity protection circuits in such automotive supply networks. State of the art

[0006] The Fig. Figure 3 represents the state of the art. Previously, reverse polarity protection was located in the form of a reverse polarity protection transistor on the ground line (GND side). However, this had the following disadvantages: The current through a low-side reverse polarity protection transistor creates a voltage drop across the reverse polarity protection transistor as a result of the R DSONResistance of the reverse polarity protection transistor when the reverse polarity protection transistor is switched on. This leads to a corresponding potential movement of single-ended data buses, whose voltage level is defined between the data line and ground. This, in turn, leads to unacceptably high radiation on the data bus. One such data bus could be the LIN data bus.

[0007] Therefore, there is a need in the prior art to implement the reverse polarity protection in the form of the reverse polarity protection transistor on the high side of the supply terminals instead of on the low side in order to decouple the data bus potential level between the potential of the data bus and the ground potential of the ground line from the voltage drop across the reverse polarity protection transistor of the reverse polarity protection.

[0008] If reverse polarity protection were implemented as a high-side transistor in the positive supply voltage line, a P-MOS transistor would be more advantageous as a reverse polarity protection transistor on the high side. However, at the time of filing this document, such P-MOS transistors are unfortunately not available in the required performance class at a reasonable price.

[0009] Therefore, there is a need to be able to use N-channel transistors as reverse polarity protection transistors in the positive supply voltage line instead of P-MOS transistors as reverse polarity protection transistors in the positive supply voltage line for reverse polarity protection of microintegrated circuits.

[0010] The problem is that the gate potential of such an N-channel reverse polarity protection transistor in the positive supply voltage line must be raised above the potential of the positive supply voltage line in order to safely switch on the N-channel reverse polarity protection transistor and thus to put it into a very well conducting state with low R DSon -resistance value.

[0011] A simple reverse polarity protection circuit in the negative supply voltage line, however, should NEVER be used in systems whose terminals contain more than two supply voltage lines - a negative supply voltage line (ground line) and a positive supply voltage line.

[0012] For example, the application circuit can be controlled via a current-controlled data bus to which the application circuit is connected. Parasitic electromagnetic radiation and current drops via the reverse polarity protection circuit in the negative supply voltage line can then lead to data signal interference, which can be critical in safety-critical systems with ASIL levels (see ISO 26262). Task

[0013] The proposal is therefore based on the task of creating a solution that does not have the above-mentioned disadvantages of the prior art and offers further advantages. These tasks include, for example, • The reduction of inrush current peaks (including hot plug in the vehicle at terminal 30 / terminal 40) • Preventing contacts from burning away, particularly through arc detection, etc. • The provision of a self-testing, certified intelligent reverse polarity protection circuit, which in certain versions is functional and safe even in >1kW applications, especially with external N-channel enhancement transistors. • Decoupling the protection level of the electrical power supply more from the application circuit. • Elimination of the requirement for the application circuit to fully meet all protection levels (e.g., capacitors on the 35V supply line for a 12V system). (The application circuit, as defined in this document, can therefore also comprise only a single electrical component, for example, a very large capacitor for intermediate energy storage.) • Decoupling the transient protection level of the supply from the application circuit (e.g. insensitivity to ISO pulses, e.g. increasing the RF insensitivity up to a frequency at which N-channel enhancement transistors can no longer adjust, e.g. at ~ 10MHz) • Enabling energy flow control (e.g. by switching subsystems on and off)

[0014] These problems are solved by the technical teaching of the independent claims. Further embodiments may be the subject of subclaims. Solution to the problem (brief overview of the basic ideas of the invention)

[0015] The invention relates to an electronic circuit protected against polarity reversal by means of a smart and networked polarity reversal protection circuit. The polarity reversal protected electronic circuit comprises at least one negative supply voltage line at a reference potential, at least one positive supply voltage line at a positive supply voltage potential relative to the reference potential, and an electrical application circuit that protects the polarity-reversal protected circuit against polarity reversal of the supply voltage lines relative to the terminals of the polarity-reversal protected circuit. The polarity reversal protection circuit described here relates to a power supply system with at least two supply voltage lines.The technical teaching of the document presented here can also be applied to systems with more than one supply voltage, for example, three-phase systems with three supply voltage lines and with / or without a neutral conductor as the negative supply voltage line. In the case of an AC or three-phase system, the polarity reversal of the supply voltage lines is already provided for automatically by design. According to the invention, the electrical application circuit has a positive power supply connection and a negative power supply connection. The application circuit should therefore preferably require a DC voltage source. Nevertheless, the polarity reversal protection circuit can be provided to permit the polarity reversal at its output in a time-dependent manner. The polarity reversal protection circuit can then operate as an inverter.According to the invention, the negative supply voltage line of the reverse-polarity protected circuit is connected to the one negative power supply terminal of the application circuit of the reverse-polarity protected circuit. The reverse-polarity protected circuit comprises a reverse-polarity protection circuit connected between the positive supply voltage line and the positive power supply terminal of the electrical application circuit. The reverse-polarity protected circuit is characterized in that the reverse-polarity protected circuit comprises a reverse-polarity protection transistor group with at least one first N-channel enhancement transistor and at least one second N-channel enhancement transistor, which are connected in series in an anti-serial arrangement within the reverse-polarity protection transistor group.

[0016] The first N-channel enhancement transistor is typically not symmetrical with respect to the interchange of the first source terminal of the N-channel enhancement transistor with the first drain terminal of the first N-channel enhancement transistor. This is due to the typically present first body diode of the first N-channel enhancement transistor. As a result, the first N-channel enhancement transistor can only block in one voltage direction between the first source terminal of the first N-channel enhancement transistor and the first drain terminal of the first N-channel enhancement transistor, while in the other polarity direction, at least the said first body diode of the first N-channel enhancement transistor is electrically conductive.

[0017] The second N-channel enhancement transistor is typically not symmetrical with respect to the interchange of the second source terminal of the N-channel enhancement transistor with the second drain terminal of the second N-channel enhancement transistor. This is due to the second body diode typically present in the second N-channel enhancement transistor. As a result, the second N-channel enhancement transistor can only block in one voltage direction between the second source terminal of the second N-channel enhancement transistor and the second drain terminal of the second N-channel enhancement transistor, while in the other polarity direction, at least the said second body diode of the second N-channel enhancement transistor is electrically conductive.

[0018] The inventive idea is to replace the reverse polarity protection transistor in reverse polarity protection circuits by an anti-serial series circuit comprising the first N-channel enhancement transistor and the second N-channel enhancement transistor, the reverse polarity protection transistor group, and to use this reverse polarity protection transistor group as a power switch of an intelligent electronic fuse and thus obtain intelligent reverse polarity protection.

[0019] For the realization of the reverse polarity protection transistor group, two arrangements of the first N-channel enhancement transistor and the second N-channel enhancement transistor are particularly suitable: In the first possible arrangement of the first N-channel enhancement transistor and the second N-channel enhancement transistor, the cathode of the body diode of the first N-channel enhancement transistor is connected to the drain terminal of the first N-channel enhancement transistor and the cathode of the body diode of the second N-channel enhancement transistor is connected to the drain terminal of the second N-channel enhancement transistor and the anode of the body diode of the first N-channel enhancement transistor is connected to the source terminal of the first N-channel enhancement transistor and the anode of the body diode of the second N-channel enhancement transistor is connected to the source terminal of the second N-channel enhancement transistor of the reverse polarity protection circuit. In this first arrangement, the source terminal of the first N-channel enhancement transistor is connected to the source terminal of the second N-channel enhancement transistor as the center terminal of the reverse polarity protection circuit.In this first arrangement of the first N-channel enhancement transistor and the second N-channel enhancement transistor, the drain terminal of the first N-channel enhancement transistor is connected to the positive supply voltage line. In this first arrangement of the first N-channel enhancement transistor and the second N-channel enhancement transistor, the drain terminal of the second N-channel enhancement transistor is connected to the positive power supply terminal of the electrical application circuit.

[0020] In the second possible arrangement of the first N-channel enhancement transistor and the second N-channel enhancement transistor, the cathode of the body diode of the first N-channel enhancement transistor is connected to the drain terminal of the first N-channel enhancement transistor and the cathode of the body diode of the second N-channel enhancement transistor is connected to the drain terminal of the second N-channel enhancement transistor and the anode of the body diode of the first N-channel enhancement transistor is connected to the source terminal of the first N-channel enhancement transistor and the anode of the body diode of the second N-channel enhancement transistor is connected to the source terminal of the second N-channel enhancement transistor of the reverse polarity protection circuit. In this second arrangement, the drain terminal of the first N-channel enhancement transistor is connected to the drain terminal of the second N-channel enhancement transistor as the center terminal of the reverse polarity protection circuit.In this second arrangement of the first N-channel enhancement transistor and the second N-channel enhancement transistor, the source terminal of the first N-channel enhancement transistor is connected to the positive supply voltage line. In this first arrangement of the first N-channel enhancement transistor and the second N-channel enhancement transistor, the source terminal of the second N-channel enhancement transistor is connected to the positive power supply terminal of the electrical application circuit. Thus, the arrangement of the N-channel enhancement transistors is reversed in this second arrangement compared to the arrangement of the first arrangement.

[0021] The reverse polarity protected circuit comprises a control device. The positive supply voltage line and the negative supply voltage line are connected to the control device. The control device is configured to generate a potential of the gate terminal of the first N-channel enhancement transistor above the potential of the positive supply voltage line and above the potential of the center terminal of the reverse polarity protection circuit, and to generate a potential of the gate terminal of the second N-channel enhancement transistor above the potential of the positive supply voltage line and above the potential of the center terminal of the reverse polarity protection circuit, when connected with the correct polarity.

[0022] According to the invention, the control device of the reverse polarity protection circuit has its own additional reverse polarity protection circuit, which protects the control device itself against reverse polarity. The document presented here refers to this as the control reverse polarity protection circuit. This control reverse polarity protection circuit has the advantage that the typically relatively small voltage drop caused by this additional control reverse polarity protection circuit in the negative supply voltage line of the control device is not present in the negative supply voltage line of the application circuit. Therefore, the typically considerable supply current in the negative supply voltage line of the application circuit does not lead to a voltage drop across the control reverse polarity protection circuit.The control reverse polarity protection circuit therefore does not interfere with the function of the data buses of the application circuit. The correct function and operational reliability of the control device of the reverse polarity protection circuit is ensured because the voltage drop across the control reverse polarity protection circuit is so low that the function of the data buses of the control device of the reverse polarity protection circuit is still guaranteed.

[0023] The control device preferably also comprises a voltage supply, which preferably also comprises a charge pump for reliably controlling the N-channel enhancement transistors of the reverse polarity protection transistor group. The charge pump preferably generates an electrical potential that lies above the electrical potential of the positive supply voltage line. The gate control circuit for controlling and monitoring the reverse polarity protection transistor group of the control device uses this output voltage of the voltage supply, which originates from the charge pump of the voltage supply, to control the N-channel enhancement transistors of the reverse polarity protection transistor group. This allows the control device to switch on the N-channel enhancement transistors of the reverse polarity protection transistor group.If the control device, the N-channel enhancement transistors of the reverse polarity protection transistor group and / or the voltage supply in the control device and / or the charge pump of the voltage supply in the control device are completely or partially faulty, the N-channel enhancement transistors of the reverse polarity protection transistor group are automatically blocked so that transients and pulses or inadmissible voltages cannot reach the application circuit.

[0024] The positive supply voltage line and the negative supply voltage line supply the control device of the reverse polarity protection circuit with electrical energy. During normal operation, a supply voltage is present between the positive supply voltage line and the negative supply voltage line, which supplies the control device of the reverse polarity protection circuit and the downstream application circuit with electrical energy.

[0025] According to the invention, the control device of the polarity reversal protection circuit preferably comprises said additional polarity reversal protection circuit, hereinafter referred to as the control polarity reversal protection circuit, which protects the control device of the polarity reversal protection circuit against polarity reversal of the positive supply voltage line and the negative supply voltage line. The control polarity reversal protection circuit thus protects the control device from negative voltage pulses on the positive supply voltage line and / or the negative supply voltage line.

[0026] For this purpose, the control reverse polarity protection circuit preferably comprises at least one rectifying component that rectifies the supply voltage between the positive supply voltage line and the negative supply voltage line.

[0027] The rectifying component of the control reverse polarity protection circuit may itself comprise one or more rectifying components.

[0028] The rectifying component of the control reverse polarity protection circuit can in particular comprise a single rectifying diode and / or a half-wave rectifier as the rectifying component.

[0029] The rectifying component of the control reverse polarity protection circuit can in particular comprise two rectifying diodes in the form of a rectifying half-bridge and / or a full-wave rectifier as a rectifying component.

[0030] The rectifying component of the control reverse polarity protection circuit can in particular comprise four rectifying diodes in the form of a rectifying H-bridge and / or a bridge rectifier (Graetz bridge or four-way rectifier) ​​as a rectifying component.

[0031] According to the invention, the control device of the reverse polarity protection circuit is further configured to raise the potential of the gate terminal of the first N-channel enhancement transistor neither above the potential of the positive supply voltage line nor above the potential of the center terminal of the reverse polarity protection circuit if the control device is not connected to the supply voltage lines with the correct polarity, but rather to leave it at a potential that reliably blocks the first N-channel enhancement transistor.

[0032] According to the invention, the control device is furthermore configured to raise the potential of the gate terminal of the second N-channel enhancement transistor neither above the potential of the positive supply voltage line nor above the potential of the center terminal of the reverse polarity protection circuit if the control device is not connected to the supply voltage lines with the correct polarity, but rather to leave it at a potential that reliably blocks the second N-channel enhancement transistor.

[0033] Preferably, the electronic reverse polarity protected circuit is additionally characterized in a further embodiment by the control device being designed to be self-safe. This means that it is designed so that interference, pulses, and reverse polarity cannot disrupt the control device's operation. It preferably has an energy reserve to bridge brief interruptions in the power supply, e.g., through its own additional reverse polarity protection circuit.

[0034] Preferably, the electronic reverse polarity protection circuit is additionally characterized in a further embodiment by the control device being RF-safe and protected against steep voltage and / or current edges on the supply voltage lines. This can be achieved, for example, by a filter in one or more of the supply voltage lines of the control device of the reverse polarity protection circuit, i.e., for example, within the control reverse polarity protection circuit of the control device of the reverse polarity protection circuit. This prevents RF transients from interfering with the actual control device of the reverse polarity protection circuit.Preferably, the control reverse polarity protection circuit of the control device of the reverse polarity protection circuit intercepts such RF transients and / or steep voltage edges of the supply voltage between the supply voltage lines so that they cannot interfere with the actual control device and its device components.

[0035] Preferably, the electronic reverse polarity protection circuit is additionally characterized in a further embodiment in that the control reverse polarity protection circuit of the power supply of the control device is implemented via a low-pass circuit. This low-pass circuit is preferably part of the control reverse polarity protection circuit of the reverse polarity protection circuit. This simple and cost-effective measure prevents RF transients from interfering with the control device of the reverse polarity protection circuit. Thus, the control reverse polarity protection circuit of the control device of the reverse polarity protection circuit preferably also intercepts such RF transients and / or steep voltage edges of the supply voltage between the supply voltage lines using this measure, so that they cannot interfere with the actual control device and its components.

[0036] Preferably, the electronic reverse polarity protected circuit is, in a further embodiment, additionally characterized in that the low-pass circuit can firstly comprise one or more reverse polarity protection diodes and / or one or more rectifiers and / or one or more Graetz bridges and / or one or more rectifying components or the like, which in turn can be part of the control reverse polarity protection circuit (81), and secondly can comprise one or more downstream capacitors and / or one or more energy reserves, which in turn can be part of the control reverse polarity protection circuit (81). In this case, one or more of the energy reserves can be designed so that they can be charged by the control reverse polarity protection circuit via the low-pass circuit, in particular of the control reverse polarity protection circuit.In this case, one or more of the energy reserves can be designed to be chargeable by the control reverse polarity protection circuit via the one or more reverse polarity protection diodes and / or one or more rectifiers and / or one or more Graetz bridges and / or one or more rectifying components or the like of the control reverse polarity protection circuit.

[0037] In this case, the forward resistance of the one or more reverse polarity protection diodes and / or the one or more rectifiers and / or the one or more Graetz bridges and / or the one or more rectifying components or similar components serves as the resistance of an RC low-pass filter, and the downstream energy reserve, in particular the downstream capacitor, serves as the energy storage (capacitor) of the RC low-pass filter. In effect, this capacitor then functions as the energy reserve of the control device. A reverse polarity protection diode with a downstream capacitor thus acts like a low-pass filter.

[0038] Preferably, in a further embodiment, the electronic reverse-polarity protected circuit is configured to detect the voltage between the potential of the positive supply voltage line and the negative supply voltage line. Preferably, in this further embodiment, the electronic reverse-polarity protected circuit is additionally configured to switch off the first N-channel enhancement transistor and / or the second N-channel enhancement transistor if the voltage value of the detected voltage between the potential of the positive supply voltage line and the negative supply voltage line and / or a single or multiple time derivative thereof reaches an impermissible value.Such an impermissible value can include an incorrect voltage sign contrary to the intended voltage sign of the supply voltage, a voltage value that is too low below a permissible maximum supply voltage value of the supply voltage, or a voltage value that is too high above a permissible maximum supply voltage value of the supply voltage. Such an impermissible value can include an incorrect voltage sign contrary to the intended voltage sign of the supply voltage, a voltage value that is too low below a permissible maximum supply voltage value of the supply voltage for too long, or a voltage value that is too high above a permissible maximum supply voltage value of the supply voltage for too long.Such an inadmissible value may include an excessively high amount of a simple or multiple time derivative of the applied voltage value of the supply voltage above a permissible maximum value of this simple or multiple time derivative of the time profile of the supply voltage value of the supply voltage.

[0039] In particular, the control device of the reverse polarity protection circuit can monitor the supply voltage between the negative supply voltage line and the positive supply voltage line to determine whether the time profile of the supply voltage exhibits ISO pulses according to one of the following standards: • ISO 7637-1 - Road vehicles - Electrical disturbance from conduction and coupling - Part 1: Definitions and general considerations" (as of: 01-10.2015) Third edition • ISO 7637-2:2011-03 -„Road vehicles - Electrical disturbance from conduction and coupling - Part 2: Electrical transient conduction along supply lines only“ • ISO 7637-3:2016 - „Road vehicles - Electrical disturbance from conduction and coupling - Part 3: Electrical transient transmission by capacitive and inductive coupling via lines other than suppply lines (3. Edition)“ • ISO 7637-3 Techn. corrigendum -only for info- „Road vehicles - Electrical disturbance from conduction and coupling“.

[0040] For this purpose, the control device of the reverse polarity protection circuit can comprise a computer core and a memory. At least the program code for computer-implemented methods is preferably stored in the memory of the control device of the reverse polarity protection circuit. The computer core of the control device of the reverse polarity protection circuit retrieves program code from the memory of the control device for executing these computer-implemented methods and typically executes this program code when executing the computer-implemented methods. For example, the computer core can use one or more single- or multi-bit analog-to-digital converters to monitor the state of the reverse polarity protection transistor group and / or the individual N-channel enhancement transistors of the reverse polarity protection transistor group and / or to detect and evaluate the temporal profile of the supply voltage between the supply voltage lines.For this purpose, the computer core of the control device of the reverse polarity protection circuit preferably executes a computer-implemented artificial intelligence method.

[0041] Preferably, the computer core of the control device of the reverse polarity protection circuit carries out the evaluation • recorded measured values ​​and / or data of the reverse polarity protection circuit and / or • recorded measured values ​​and / or data from device parts of the reverse polarity protection circuit and / or • recorded measured values ​​and / or data from sensors, in particular temperature sensors, the reverse polarity protection circuit and / or • recorded measured values ​​and / or data from device parts, in particular sensors and / or temperature sensors and / or pressure sensors, of the application circuit, which the computer core of the reverse polarity protection circuit receives in particular via one or more data buses or via signal lines and / or signal connections, and / or • recorded measured values ​​and / or data from signaling of the application circuit, which the computer core of the reverse polarity protection circuit receives in particular via one or more data buses or via signal lines and / or signal connections, and / or • recorded measured values ​​and / or data from signals from other reverse polarity protection circuits in a data network, which the computer core of the reverse polarity protection circuit receives in particular via one or more data buses and / or signal lines and / or signal connections and / or • recorded measured values ​​and / or data from signals from electronic fuses in a data network, which the computer core of the reverse polarity protection circuit receives in particular via one or more data buses and / or signal lines and / or signal connections and / or • recorded measured values ​​and / or data from signals from electronic fuses in a data network, which the computer core of the reverse polarity protection circuit receives in particular via one or more data buses and / or signal lines and / or signal connections and / or • recorded measured values ​​and / or data from signals from other devices in a data network, which the computer core of the reverse polarity protection circuit receives in particular via one or more data buses and / or signal lines and / or signal connections and / or • recorded measured values ​​and / or data from signals from other device parts of a vehicle in a data network, which the computer core of the reverse polarity protection circuit receives in particular via one or more data buses and / or signal lines and / or signal connections, the reverse polarity protection circuit being part of the vehicle in this case, and / or • recorded measured values ​​and / or data from signals from other device parts in the environment of a vehicle in a data network, which the computer core of the reverse polarity protection circuit receives in particular via one or more wired and / or wireless data buses and / or signal lines and / or signal connections, wherein the reverse polarity protection circuit is part of the vehicle in this case, one or more computer-implemented artificial intelligence methods for classifying and / or evaluating these measured values ​​and / or data.

[0042] Preferably, by executing these one or more computer-implemented artificial intelligence methods, the computer core of the control device can infer an error condition or the like and, if necessary, initiate measures and / or send signals to a higher-level computer system via a data bus. Such a measure can be the blocking of one or both N-channel enhancement transistors of the reverse polarity protection transistor group of the reverse polarity protection circuit.

[0043] In particular, the control device of the reverse polarity protection circuit can be configured to detect a malfunction of one of the N-channel enhancement transistors. The control device of the reverse polarity protection circuit is preferably configured to block the other N-channel enhancement transistor if it detects a malfunction of one of the N-channel enhancement transistors. For this purpose, the control device of the reverse polarity protection circuit preferably evaluates voltage and / or current measured values ​​of the reverse polarity protection transistor group and the individual N-channel enhancement transistors. As a result, the control device of the reverse polarity protection circuit can, in particular, detect a failure of one of the two N-channel enhancement transistors and, by switching off the still functional N-channel enhancement transistor, bring the reverse polarity protection transistor group into a safe state, for example, one that does not allow fire.

[0044] Preferably, the electronic reverse polarity protection circuit, and specifically preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protection circuit, is configured in a further embodiment to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor of the reverse polarity protection transistor group back on when the voltage value of the detected voltage between the potential of the positive supply voltage line and the negative supply voltage line and / or a single or multiple time derivative thereof again reaches a permissible value. This enables the resumption of proper operation if the fault was a short-term one.

[0045] Preferably, the electronic reverse polarity protection circuit, and specifically preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protection circuit, is configured in a further embodiment to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor back on after a predetermined or programmable waiting time when the voltage value of the detected voltage between the potential of the positive supply voltage line and the negative supply voltage line and / or a single or multiple time derivative thereof again reaches a permissible value. This enables the resumption of proper operation if the fault was a short-term one.The control device of the reverse polarity protection circuit, and in particular its processor core, can determine whether the fault was permanent or temporary, particularly using a computer-implemented method. Therefore, the control device, and in particular its processor core, preferably limits the number of typically consecutive reclosing attempts to a maximum number of reclosing attempts. Depending on the application and potential hazard, the rules for reclosing can be more complex and can be provided with different time specifications.

[0046] Preferably, the electronic reverse polarity protected circuit, and in particular preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protected circuit, is configured in a further embodiment to detect the voltage between the potential of the positive supply voltage line and the positive power supply terminal of the electrical application circuit.Preferably, the electronic reverse polarity protected circuit, and specifically preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protected circuit in this further embodiment, is configured to switch off the first N-channel enhancement transistor and / or the second N-channel enhancement transistor when the voltage value of the voltage between the potential of the positive supply voltage line and the positive power supply terminal of the electrical application circuit and / or a single or multiple time derivative thereof reaches an impermissible value. This protects the downstream application circuit from overvoltages and undervoltages.

[0047] Preferably, the electronic reverse polarity protected circuit, and specifically preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protected circuit, is configured in a further embodiment to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor back on when the voltage value of the detected voltage between the potential of the positive supply voltage line and the positive power supply terminal of the electrical application circuit and / or a single or multiple time derivative thereof again reaches a permissible value. This protects the downstream application circuit from transients and crosstalk RF signals.

[0048] Preferably, the electronic reverse polarity protected circuit, and specifically preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protected circuit, is configured in a further embodiment to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor back on after a predetermined or programmable waiting time when the voltage value of the detected voltage between the potential of the positive supply voltage line and the positive power supply terminal of the electrical application circuit and / or a single or multiple time derivative thereof again reaches a permissible value. This enables the resumption of normal operation if the disturbance is of a temporary nature, such as one of the aforementioned ISO pulses.

[0049] Preferably, the electronic reverse polarity protected circuit, and in particular preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protected circuit, is configured in a further embodiment to detect the electrical current from the positive supply voltage line into the positive power supply terminal of the electrical application circuit.Preferably, the electronic reverse polarity protected circuit, and more specifically preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protected circuit in this further embodiment, is configured to switch off the first N-channel enhancement transistor and / or the second N-channel enhancement transistor when the current value of the electrical current from the positive supply voltage line into the positive energy supply terminal of the electrical application circuit and / or a simple and / or multiple time derivative thereof and / or the square thereof and / or a simple or multiple integral and / or a simple or multiple integral of the square thereof and / or a value of a polynomial from these values ​​with value-specific polynomial coefficients reaches an inadmissible value.This allows the reverse polarity protection circuit to detect faults in the application circuit and protect both the application circuit and the users. In particular, the control device and / or the computer core of the control device of the reverse polarity protection circuit can determine and monitor the amount of energy transported into the application circuit, for example, using computer-implemented methods, for example, by also taking into account the current value of the supply voltage. This allows the computer core of the control device and / or the control device of the reverse polarity protection circuit to prevent a fire in the application circuit or similar events.

[0050] Preferably, the electronic reverse polarity protected circuit, and more specifically preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protected circuit, in a further embodiment, is configured to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor back on when the current value of the electrical current from the positive supply voltage line into the positive power supply terminal of the electrical application circuit and / or a simple and / or multiple time derivative thereof and / or the square thereof and / or a simple or multiple integral and / or a simple or multiple integral of the square thereof and / or a value of a polynomial from these values ​​with value-specific polynomial coefficients reaches a permissible value again. This enables normal operation to resume after a disturbance in the current values.

[0051] Preferably, the electronic reverse polarity protected circuit, and more specifically preferably the computer core of the control device of the reverse polarity protection circuit of the electronic reverse polarity protected circuit, in a further embodiment, is configured to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor on again after a predetermined or programmable waiting time when the current value of the electrical current from the positive supply voltage line into the positive energy supply connection of the electrical application circuit and / or a simple and / or multiple time derivative thereof and / or the square thereof and / or a simple or multiple integral and / or a simple or multiple integral of the square thereof and / or a value of a polynomial from these values ​​with value-specific polynomial coefficients reaches a permissible value again.This prevents normal operation from resuming too early. Preferably, the computer core of the control device maintains statistics on the restart attempts and shutdowns using a computer-implemented method. Preferably, the computer core of the control device signals these data, in whole or in part, or data derived therefrom, at least temporarily, to a higher-level computer system via a data bus. If too many shutdowns have occurred within a specified period of time, or if they have occurred at all, the computer core of the control device of the reverse polarity protection circuit can, using a computer-implemented method, conclude that there is a permanent fault and prevent further restart attempts until a contrary command is issued from a higher-level computer system via a data bus.

[0052] In order to generate the gate potential of the first and / or second N-channel reverse polarity protection transistor in the positive supply line, the proposed reverse polarity protection circuit preferably has a charge pump or a boostrap circuit.

[0053] The special feature of the proposed solution is that a body diode of one of the N-channel enhancement transistors is always reverse-biased, so that the reverse-polarity protection transistor group only conducts electrically when at least one, preferably both, N-channel enhancement transistors are electrically conductive by the control device of the reverse-polarity protection circuit. If the control device of the reverse-polarity protection circuit fails, both N-channel enhancement transistors and at least one of the two body diodes of the two N-channel enhancement transistors are blocked. This also allows supply voltage transients to be detected and switched off by the reverse-polarity protection transistor group.

[0054] This enables the proposed reverse polarity protection circuit to detect and intercept more complex fault cases and to make the data available to a higher-level computer system and / or other reverse polarity protection circuits and / or electronic fuses.

[0055] When developing the invention, it was assumed that the circuits would function up to approximately 10 MHz. Above this frequency, too much control power is required to recharge the gate capacitances of the N-channel enhancement transistors in the positive supply voltage line. The charge pump of the voltage supply of the control device of the reverse polarity protection circuit can then no longer supply this recharge current. The voltage supply and / or the charge pump can be incorporated into the application circuit. For the purposes of the document presented here, they are then still part of the control device of the reverse polarity protection circuit. However, this is preferably not the case.

[0056] The application circuit can be an energy consumer (load) and / or an energy producer (generator). The application circuit can temporarily switch between these configurations depending on the operating state of the application circuit. Examples include capacitive loads and / or inductive loads, such as electric motors, and / or accumulators (operating states: charging vs. feeding).

[0057] Particularly preferred are “fully” isolated MOSFETs at supply voltage level as N-channel enhancement transistors for smaller currents on the supply voltage line within the reverse polarity protection circuit.

[0058] Particularly preferred for larger currents (e.g., 0.5A ... 200A to >1,000.0A) on the supply voltage line, control devices for the reverse polarity protection circuit can be achieved with suitable N-channel enhancement transistors. The N-channel enhancement transistors of the reverse polarity protection transistor group are primarily limiting factors in this regard.

[0059] The N-channel enhancement transistors can each be implemented, for example, as a single N-channel MOS-FET based on silicon, silicon carbide, or gallium nitride. The N-channel enhancement transistors can each also be implemented, for example, from circuit blocks, e.g., a cascode circuit comprising a depletion-mode GaN transistor in combination with an enhancement silicon transistor.

[0060] One problem is that the N-channel enhancement transistors of the reverse polarity protection transistor group can be destroyed by second-order breakdown if the switching is too fast. To prevent this effect, the reverse polarity protection circuit controller can provide for a pulsed turn-on of one or, better yet, both N-channel enhancement transistors of the reverse polarity protection transistor group and execute this during turn-on. A disadvantage of this method is the emission of electromagnetic interference and thus reduced electromagnetic compatibility (EMC).

[0061] Preferably, the control device of the reverse polarity protection circuit controls the switching on of the reverse polarity protection transistor group in such a way that a current ramp with a slowly increasing current value of the electrical current in the positive supply voltage line results for the value of the electrical current in the positive supply voltage line.

[0062] Preferably, the control device of the reverse polarity protection circuit also controls the switching off of the reverse polarity protection transistor group in such a way that a current ramp with a slowly decreasing current value of the electrical current in the positive supply voltage line results for the value of the electrical current in the positive supply voltage line.

[0063] Especially with inductive loads, the reverse polarity protection circuit can prevent the occurrence of destructive induction voltages in the kV range.

[0064] The question arises as to how the energy of such an inductive load can be dissipated in the application circuit. According to the invention, one or more bypass transistors are provided between the positive supply voltage line on the application circuit side and the negative supply voltage line (ground line), which divert the induced current to ground, possibly via a bypass resistor.

[0065] Separate control lines between the control device of the reverse polarity protection circuit and the respective N-channel enhancement transistors enable the sequential switching on (precharging) of the control terminals (gates) of the N-channel enhancement transistors by the control device of the reverse polarity protection circuit and the separate measuring of the potentials of the terminals of the respective N-channel enhancement transistors and the reverse polarity protection transistor group, as well as the detection of the electrical currents through the respective N-channel enhancement transistors and the reverse polarity protection transistor group.

[0066] Instead of N-channel enhancement transistors, transistor circuits with analog properties can also be used. These are included in the claim if the claims mention N-channel enhancement transistors.

[0067] The use of GaN-based transistors as N-channel enhancement transistors is particularly preferred. These enable fast turn-off.

[0068] The use of bipolar transistors instead of N-channel enhancement transistors is also conceivable for low-power applications. These are included in the claim if N-channel enhancement transistors are mentioned in the claims.

[0069] The N-channel enhancement transistors are preferably designed as anti-serially connected pairs of identical N-channel enhancement transistors, so that the reverse polarity protection transistor group is preferably symmetrical.

[0070] For the fully integrated solution (reverse polarity protection transistor group in a microintegrated reverse polarity protection circuit), power MOSFETs are preferably used for the N-channel enhancement transistors of the reverse polarity protection transistor group. These power MOSFETs can isolate the full (over)voltage, both positive and negative, from GND, can carry the operating current, and can switch the turn-on and turn-off energy without damage. They are preferably selected to dissipate the short-circuit energy or the feedback energy and / or the overcurrent. They are also preferably designed to carry any short-circuit currents that may occur, at least for a short time. This is the case, for example, for large loads in the application circuit with τ>2ms. Otherwise, the load of the application circuit must be explicitly limited. Advantage of the proposed reverse polarity protection circuit

[0071] Such a reverse polarity protection circuit 1 enables, at least in some implementations, intelligent control of the power supply and improved protection of the application circuit against other interference scenarios. However, the advantages are not limited to this.

[0072] In all electronic modules that require, among other things, reverse polarity protection (independent of current direction), the technology presented here achieves additional ISO pulse protection (transient protection) and protection against overcurrent, overvoltage and overtemperature.

[0073] The proposal enables full bidirectional power switching without restriction of the current voltage and current values.

[0074] The proposed system can be used as a standalone solution to protect electronic modules and / or application circuits 83.

[0075] The proposed reverse polarity protection can also be used as an intelligent electronic fuse. List of characters Fig. 1 shows an example of a simple and widely used reverse polarity protection circuit from the state of the art. Fig. Figure 2 schematically and very simply outlines the use of the proposed reverse polarity protection circuit 1. Fig. 3 shows a simplified and schematic system 50 comprising electronic reverse polarity protection circuit 1, data bus 9 and higher-level computer system 12. According to the proposal, the electronic reverse polarity protection circuit 1 preferably comprises a reverse polarity protection transistor group 17 with preferably two anti-serially connected N-channel enhancement transistors and a control device 4 which controls these N-channel enhancement transistors of the reverse polarity protection transistor group 17 and thus the reverse polarity protection transistor group 17. Fig. 4 largely corresponds to the technical teaching of the Fig. 3, where in contrast to Fig. 3 the gate control circuit 16 for controlling and monitoring the reverse polarity protection transistor group 17 does not control the reverse polarity protection transistor group 17 with a single control line 20 for controlling the reverse polarity protection transistor group 17, but controls it with two control lines 20* and 20**. The Fig. 5a, Fig. 5b and Fig. 5c show, by way of example, various types of possible connections between a reverse polarity protection transistor group 17 and the gate drive circuit 16 of a control device 4 of a reverse polarity protection circuit 1. Fig. Figure 5d shows the usual circuit symbol for an N-channel enhancement transistor. Fig. Figure 5e shows an example of an alternative functionally equivalent realization of the N-channel enhancement transistor as an interconnection of a GaN-based depletion MOS-FET transistor (GaN-based self-conducting depletion field-effect transistor) and a silicon-based N-channel enhancement FET transistor. Fig. 6 shows a method 300 for using the center terminal 86 for diagnosing the first N-channel enhancement transistor and the second N-channel enhancement transistor of the reverse polarity protection transistor group 17 Description of the figuresFigure 1

[0076] Fig. Figure 1 shows an exemplary simple and widely used reverse polarity protection circuit from the prior art. A single N-channel enhancement transistor 100 is inserted into the positive supply voltage line 6 of the application circuit 83. A charge pump 100 for supplying the single N-channel enhancement reverse polarity protection transistor 100 brings the control electrode (gate) of the channel enhancement reverse polarity protection transistor 100 to an electrical potential above the electrical potential of the positive supply voltage line 6.

[0077] Between the potential of the positive supply voltage line 6 and the potential of the negative supply voltage line 201 lies the positive supply voltage V bat A simple, exemplary reverse polarity detection circuit 102 detects reverse polarity, i.e. a negative supply voltage V bat, and switches off the single N-channel enhancement reverse polarity protection transistor 100 in the event of such a reverse polarity. An overvoltage protection (V GS -protection) is triggered when the supply voltage V bat electrically conductive and limits the voltage reaching the N-channel enhancement reverse polarity protection transistor 100. However, if the voltage source on the positive supply voltage line 6 has a very low resistance, the effect is limited and may even be insufficient. A passive safety shutdown resistor (discharge gate) 104 discharges the control electrode (gate) of the N-channel enhancement reverse polarity protection transistor 100 during negative voltage pulses. Figure 2

[0078] Fig. Figure 2 schematically and in a highly simplified manner outlines the use of the proposed reverse polarity protection circuit 1. The control device 4 of the electronic reverse polarity protection circuit 1 is provided with a control reverse polarity protection circuit 81, which protects the control device 4 of the electronic reverse polarity protection circuit 1 in the event of reverse polarity. In the example of Fig. 2, the control polarity reversal protection circuit 81 is inserted into the ground line of the voltage supply 5 of the control device 4 of the electronic polarity reversal protection circuit 1. Thus, the control polarity reversal protection circuit 81 of the control device 4 of the electronic polarity reversal protection circuit 1 is not located in the ground line of the application circuit 83. Thus, only the low currents for operating the control device 4 of the electronic polarity reversal protection circuit 1 occur there. These currents generally do not lead to a relevant voltage offset of the reference potential of the data bus interface 10 of the control device 4 of the electronic polarity reversal protection circuit 1 compared to the internal reference potential of the control device 4 of the electronic polarity reversal protection circuit 1. These voltage drops across the control polarity reversal protection circuit 81 of the control device 4 of the electronic polarity reversal protection circuit 1 cannot disrupt a data bus interface of the application circuit 83.

[0079] The power supply 5 of the control device 4 of the electronic reverse polarity protection circuit 1 preferably feeds an energy reserve 8, which serves to compensate for any gaps that may occur in the power supply of the control device 4 of the electronic reverse polarity protection circuit 1. This is preferably a capacitor or the like, which can also be provided outside the control device 4 of the electronic reverse polarity protection circuit 1 and / or outside the electronic reverse polarity protection circuit 1.

[0080] The voltage supply 5 of the control device 4 of the electronic reverse polarity protection circuit 1 preferably comprises the aforementioned charge pump for generating a potential of an internal supply voltage line that is higher than the potential of the positive supply voltage line. This allows a gate control circuit 16 of the control device 4 of the electronic reverse polarity protection circuit 1 to use this potential of this internal supply voltage line to control and monitor the reverse polarity protection transistor group 17 and apply this potential to the control electrodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17, thus turning on (= closing) these two N-channel enhancement transistors of the reverse polarity protection transistor group 17.

[0081] The two N-channel enhancement transistors of the reverse polarity protection transistor group 17 each have a body diode. In the example of the Fig. 2, the two N-channel enhancement transistors of reverse polarity protection transistor group 17 are connected anti-serially. If a voltage is now applied between the first terminal 18 of reverse polarity protection transistor group 17 and the second terminal 19 of reverse polarity protection transistor group 17, at least one of the two body diodes of the two N-channel enhancement transistors of reverse polarity protection transistor group 17 can open. However, at least one of the two body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 is then always blocked. Thus, the first terminal 18 of the reverse polarity protection transistor group 17 and the second terminal 19 of the reverse polarity protection transistor group 17 are electrically isolated from each other when the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are not driven or blocked.Thus, even in the non-driven state of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17, at least one body diode of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 is always blocked and thus the reverse polarity protection transistor group 17 is high-resistance and blocked.

[0082] In the example of Fig. 2, the cathodes of the body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected to the terminals (18, 19) of the reverse polarity protection transistor group 17 and the anodes of the body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected to one another via a center terminal 86 of the reverse polarity protection transistor group 17.

[0083] In an alternative example not shown here, the anodes of the body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected to the terminals (18, 19) of the reverse polarity protection transistor group 17, and the cathodes of the body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected to each other via the center terminal 86 of the reverse polarity protection transistor group 17. The effect is essentially the same, so these embodiments are essentially equivalent.

[0084] The embodiments shown in the following figures all show the embodiment of the Fig. 2. A technically trained person arrives at the analog alternative implementations if they replace in the following figures the respective reverse polarity protection transistor groups 17, in which the cathodes of the body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected to the terminals (18, 19) of the reverse polarity protection transistor group 17 and in which the anodes of the body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected to one another via the center terminal 86 of the reverse polarity protection transistor group 17, by reverse polarity protection transistor groups 17, in which the anodes of the body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected to the terminals (18,19) of the reverse polarity protection transistor group 17 and in which the cathodes of the body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected to each other via the center terminal 86 of the reverse polarity protection transistor group 17.

[0085] The center terminal 86 of the reverse polarity protection transistor group 17 is in the example of Fig. 1 is connected to the gate drive circuit 16 for driving and monitoring the reverse polarity protection transistor group 17. Furthermore, the gate drive circuit 16 of the control device 4 and / or another device of the control device 4 are preferably electrically connected to the first terminal 18 of the reverse polarity protection transistor group 17 and to the second terminal 19 of the reverse polarity protection transistor group 17, so that the gate drive circuit 16 and / or the other device of the control device 4 can detect, monitor, and evaluate the voltage drops across one or both N-channel enhancement transistors of the reverse polarity protection transistor group 17. The control device 4 can preferably switch the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 individually or jointly, and in the same way or in an unequal way.During normal operation, the control device 4 preferably switches the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 together in the same way.

[0086] The gate drive circuit 16 of the control device 4 can preferably individually switch off the N-channel enhancement transistors for testing purposes and then check the supply voltage at the second terminal 19 of the reverse polarity protection transistor group 17 against the reference potential, thus determining whether the N-channel enhancement transistors of the reverse polarity protection transistor group 17 are functioning. The computer core 2 of the control device 4 can then report the result of such a test to a higher-level computer system 12 via a data bus 9. The higher-level computer system 12 can also initiate such a test by the computer core 2 and the gate drive circuit 16 of the control device 4 via a data bus command via the data bus 9.

[0087] The higher-level computer system 12 can also cause the N-channel enhancement transistors of the reverse polarity protection transistor group 17 to be switched on individually and / or jointly by the computer core 2 and the gate control circuit 16 of the control device 4 by means of a data bus command via the data bus 9.

[0088] The higher-level computer system 12 can also cause the N-channel enhancement transistors of the reverse polarity protection transistor group 17 to be switched off individually and / or jointly by the computer core 2 and the gate control circuit 16 of the control device 4 by means of a data bus command via the data bus 9.

[0089] The higher-level computer system 12 can also initiate a measurement of the voltages at the terminals of the N-channel enhancement transistors of the reverse polarity protection transistor group 17 by the computer core 2 and the gate control circuit 16 and an analog-to-digital converter 570 of the control device 4 by means of a data bus command via the data bus 9 and query the measured values ​​via the data bus 9.

[0090] The higher-level computer system 12 can also initiate a measurement of the currents through the N-channel enhancement transistors of the reverse polarity protection transistor group 17 by the computer core 2 and the gate control circuit 16 and an analog-to-digital converter 570 of the control device 4 by means of a data bus command via the data bus 9 and query the measured values ​​via the data bus 9.

[0091] This means that the system of Fig. 2 has numerous analytical skills.

[0092] In the example of Fig. 2, a support capacitor 85 stabilizes the potential at the internal accounts of the reverse polarity protection transistor group 17 against a potential within the control device 4.

[0093] In the example of Fig. 4, only a synchronous and identical control of the control electrodes of the N-channel enhancement transistors of the reverse polarity protection transistor group 17 is provided by way of example. Instead, it can also be provided that the gate control circuit 16 of the control device and thus the computer core of the control device 4, which can typically control the gate control circuit 16 via an internal data bus 11 of the control device 4, can control the control contacts of the N-channel enhancement transistors of the reverse polarity protection transistor group 17 individually and independently of one another. This then opens up the previously described diagnostic options for monitoring the reverse polarity protection transistor group 17.

[0094] For such an independent control option of the N-channel enhancement transistors of the reverse polarity protection transistor group 17, the gate control circuit 16 of the control device preferably has an independently controllable first control output for controlling the first control terminal (gate) of the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 and preferably an independently controllable second control output for controlling the second control terminal (gate) of the second N-channel enhancement transistor of the reverse polarity protection transistor group 17.

[0095] In the example of Fig. 2, the control device 4 signals status information, for example, to the application circuit 83 by means of a separate signaling line. Figure 3

[0096] Fig. Figure 3 shows a simplified and schematic system 50 comprising electronic reverse polarity protection circuit 1, data bus 9, and higher-level computer system 12. According to the proposal, electronic reverse polarity protection circuit 1 preferably comprises a reverse polarity protection transistor group 17 with two anti-serially connected N-channel enhancement transistors and a control device 4 that controls this reverse polarity protection transistor group 17. The reverse polarity protection transistor group 17 is preferably a MOS transistor or the like. Other semiconductor components such as thyristors, bipolar transistors, thyristors, etc. are conceivable, but are currently less common.

[0097] The reverse polarity protection transistor group 17 can be integrated with device components of the control device 4 in a semiconductor substrate. However, different technologies are preferably used for the reverse polarity protection transistor group 17 and the control device 4. The control device 4 is preferably manufactured using CMOS technology. The N-channel enhancement transistors of the reverse polarity protection transistor group 17 are preferably manufactured using MOS technology for power transistors or another semiconductor technology for power transistors. The shunt resistor 24 can be integrated with the control device 4 on a common semiconductor substrate or together with the reverse polarity protection transistor group 17 on a common substrate.

[0098] In the Fig. 3, for the sake of clarity, not all useful and possibly common device components are shown. Further device components that the reader may consider to be potentially Fig. 3 can be found, for example, in the Fig. 7, Fig. 8, Fig. 11, Fig. 26, Fig. 43, Fig. 44, Fig. 54, Fig. 55, Fig. 56, Fig. 57, Fig. 59, Fig. 60, Fig. 64. The combination of the device parts of the figure described here with those of these figures is expressly part of the disclosure of the document presented here.

[0099] The higher-level computer system 12 exchanges data with the control device 4 via the data bus 9. Typically, the higher-level computer system 4 queries status data of the electronic reverse polarity protection circuit 1 via the data bus 9 and a data bus interface 10 from a computer core 2 of the control device 4 of the electronic reverse polarity protection circuit 1. In doing so, the computer core 2 preferably accesses the peripheral components of the control device 4 via an internal data bus 11. These peripheral components can include, for example, but are not limited to, the data bus interface 10, a watchdog 13, non-volatile memory 14, volatile random access memory 15, and a gate control circuit 16 for controlling and monitoring the reverse polarity protection transistor group 17.

[0100] Preferably, one gate control circuit 16 monitors and controls the polarity reversal protection transistor group 17. A control line 20 for controlling the polarity reversal protection transistor group 17 preferably connects the gate control circuit 16 to the first terminal of the polarity reversal protection transistor group 17. The gate control circuit 16 preferably controls the switching state of the polarity reversal protection transistor group 17 by means of the control line 20. The gate control circuit 16 preferably detects one or more voltages between the first terminal 26 of the polarity reversal protection transistor group 17 and / or the second terminal 28 of the polarity reversal protection transistor group 17 and / or the control terminal 27 of the polarity reversal protection transistor group 17 on the one hand and a reference potential 201 on the other.The gate drive circuit 16 preferably detects one or more voltages between the first terminal 26 of the polarity reversal protection transistor group 17 and / or the second terminal 28 of the polarity reversal protection transistor group 17 and / or the control terminal 27 of the polarity reversal protection transistor group 17. The electronic polarity reversal protection circuit 1 preferably comprises an auxiliary polarity reversal protection transistor group 23. The auxiliary polarity reversal protection transistor group 23 preferably serves to detect a current that is proportional to the current through the polarity reversal protection transistor group 17 or otherwise corresponds. The electronic polarity reversal protection circuit 1 preferably comprises a shunt resistor 24. The magnitude of the electrical current 36 through the shunt resistor 24 and the auxiliary polarity reversal protection transistor group 23 is typically proportional to the magnitude of the electrical current 29 through the polarity reversal protection transistor group 17.A measuring line 25 serves to detect the voltage drop across the shunt resistor 24. A monitoring line 21 serves to detect the voltage between the second terminal 19 of the reverse polarity protection transistor group 17 and the control line 20 of the reverse polarity protection transistor group 17. Preferably, the gate control circuit 16 detects the voltage drop across the shunt resistor 24 by means of the measuring line 25 and a monitoring line 21. Typically, the computer 2 of the control device 4 of the electronic reverse polarity protection circuit 1 controls the reverse polarity protection transistor group 17 depending on the values ​​of these voltages thus detected and depending on commands which the computer 2 of the control device 4 receives, for example, from a higher-level computer system 12, for example via the said data bus 9.

[0101] For the purposes of the document presented here, the first terminal 18 of the electronic reverse polarity protection circuit 1 is preferably the energy source-side terminal of the electronic reverse polarity protection circuit. For the purposes of the document presented here, the second terminal 19 of the electronic reverse polarity protection circuit 1 is preferably the load-side terminal of the electronic reverse polarity protection circuit. Since loads such as motors often do not consume energy in certain operating situations, such as braking, but rather recover it, this assignment may be reversed during operation. In this respect, it only represents an idea of ​​the predominant use of the first terminal 18 of the reverse polarity protection circuit 1 and the second terminal 19 of the reverse polarity protection circuit 1.

[0102] A watchdog 13 is preferably used to monitor the microcontroller, i.e., the computer 2. In the simplest case, the watchdog is a timer that counts, for example, with the system clock of the control device 4. Typically, the computer 2 signals the watchdog 13 at more or less regular intervals that it is still functional. Preferably, with each signal from the computer 2, the watchdog 13 resets its counter reading to a predetermined start value. However, if the watchdog 13 reaches a predetermined watchdog threshold, the watchdog 13 typically assumes that the computer 2 is interfering with the execution of the operating program. The watchdog 13 then typically takes countermeasures. One countermeasure can, for example, be resetting the program execution of the computer 2 to a predetermined program start address. Another countermeasure can be stopping the computer 2.Another countermeasure can be opening the reverse polarity protection transistor group 17. Another countermeasure can, for example, be signaling the watchdog 13 to a higher-level computer system 12 via the internal data bus 11, the data interface 10, and the external data bus 9. Typically, the computer 2 of the control device 4 of the electronic reverse polarity protection circuit 1 can configure the watchdog 13 via the internal data bus 11 using registers of the watchdog 13 and read the status of the watchdog 13 via watchdog registers.

[0103] The non-volatile memory 14 can comprise, for example, a flash memory, an EEPROM, a ROM, or the like. The non-volatile memory 14 preferably comprises data and / or program code. The computer 2 of the electronic reverse polarity protection circuit 1 preferably accesses this data and the program code via the internal data bus 11. In particular, the data in the non-volatile memory 14 preferably also comprises configuration data of the electronic reverse polarity protection circuit 2.

[0104] Furthermore, the proposed electronic reverse polarity protection circuit 1 preferably comprises a volatile random access memory 15. The volatile random access memory 15 can be, for example, a RAM, an SRAM, a DRAM, an FRAM, an MRAM, or the like. The computer 2 of the electronic reverse polarity protection circuit 1 preferably uses this volatile random access memory 15 to temporarily store intermediate results.

[0105] An oscillator 30 with a clock supply preferably generates the system clock of the control device 4 of the electronic reverse polarity protection circuit 1. Preferably, the higher-level computer system 12 can access the configuration registers of the oscillator 30 and the clock supply via the internal data bus 11 and the data bus interface 10 and the data bus 9, configure them, and read out their status. Likewise, the computer 2 can preferably access these configuration registers of the oscillator 30 and the clock supply via the internal data bus 11, configure them, and read out their status from status registers.

[0106] Preferably, the control device 4 comprises a timer and / or a clock of the control device 4. The computer 2 can then combine measured values ​​of the gate control circuit 16 for controlling and monitoring the reverse polarity protection transistor group 17 with a time stamp from a time value of the timer 16 and measured values ​​of voltages and / or other physical parameters, etc.

[0107] For example, a temperature measuring device 40 can determine the temperature of the control device 4 and / or the temperature of device parts of the control device 4. The control device 4 of the reverse polarity protection circuit 1 can also comprise an analog-to-digital converter 570, which is illustrated by way of example in a subsequent figure. For example, such an analog-to-digital converter can provide a measuring line to a temperature sensor 586 (not shown here for clarity), via which the analog-to-digital converter 570 can determine the temperature of the reverse polarity protection transistor group 17 or other device parts of the reverse polarity protection circuit 1 and make it available to the computer 2 via the data bus 11. For this purpose, this temperature sensor 586 is preferably thermally closely coupled to the reverse polarity protection transistor group 17. The temperature sensor 586 is preferably a sub-device of the reverse polarity protection transistor group 17.The electronic reverse polarity protection circuit can have several temperature sensors 586, whose measured value signals can be detected by the analog-to-digital converter 570 and made available to the computer 2. For example, the temperature sensor 586 can also detect the temperature of the line at the first terminal 18 or the second terminal 19 of the electronic reverse polarity protection circuit 1.

[0108] The electronic reverse polarity protection circuit 1 preferably has a voltage supply 5 for the control device 4 and the operation of any other device components of the electronic reverse polarity protection circuit 1. A line for the operating voltage 6 and a line for the reference potential 201 preferably supply the electronic reverse polarity protection circuit 1 with electrical energy. It is also conceivable for the electronic reverse polarity protection circuit to draw its energy from the first terminal 18 and / or the second terminal 19 on the one hand and the reference potential line 201 on the other. During normal operation, the voltage supply 5 preferably charges an energy reserve 8. This is typically a capacitor and / or an accumulator or the like.

[0109] In the event of a power failure via the operating voltage 6, the energy reserve 8 supplies the control device 4 and thus the reverse polarity protection transistor group 17 with the necessary power via an emergency power supply 7. In the event of such a failure, the power supply 5 preferably disconnects the operating voltage 6 and, if applicable, also the reference potential 201 using isolating switches to prevent the energy reserve 8 from discharging.

[0110] Preferably, the voltage supply 5 comprises the necessary voltage regulators and / or voltage converters in order to provide the voltages required by the control device 4 from the energy reserve 8 or from the operating voltage 6 for the operation of the control device 4.

[0111] The control device 4 presented here for operating an electronic reverse polarity protection circuit 1 of a vehicle preferably has a system-based chip functionality. This system-based chip functionality provides all the functions required to operate a microcontroller as the computer core 2 in the control device 4 of the electronic reverse polarity protection circuit 1 and at least one data interface 1, so that the computer core 2 can reliably transmit at least errors and / or malfunctions of the control device 4 and / or other device components of the reverse polarity protection circuit to a higher-level computer system 12 via the data bus 9. This system-based chip functionality includes a boost converter 5 for the voltage supply 5 of the safety-relevant device components of the control device 4 of the reverse polarity protection circuit 1 and for charging and, if necessary, discharging an internal or external energy reserve 8.The energy reserve 8 can comprise a rechargeable battery and / or a capacitor. During normal operation, the boost converter 5 preferably prepares an externally provided operating voltage 6 from one or more external energy sources and provides the necessary internal operating voltages to the device components of the control device 4 and / or other device components of the reverse polarity protection circuit 1. The computer core 2 of the control device 4 of the reverse polarity protection circuit 1 monitors the operating voltage 6 of the boost converter 5, for example, using an analog-to-digital converter 570. The computer core 2 of the control device 4 of the reverse polarity protection circuit 1 switches to emergency operation in the event of a failure of the externally provided operating voltage 6.Preferably, in such an emergency operation, the boost converter 5 supplies the control device 4 and / or other device components of the polarity reversal protection circuit, insofar as this is absolutely necessary, with electrical energy from the energy reserve 8. In normal operation, the boost converter 5 charges the energy reserve 8 with electrical energy. In emergency operation, the energy reserve 8 takes over the energy supply of the control device 4 of the polarity reversal protection circuit 1. Thus, in emergency operation, the boost converter 5 and / or a functionally equivalent second voltage regulation device provide an emergency energy supply 7 for the safety-relevant device components of the control device 4 of the polarity reversal protection circuit 1 and / or the polarity reversal protection circuit 1. Figure 4

[0112] Fig. 4 largely corresponds to the technical teaching of the Fig. 3. In contrast to Fig. 3, the gate control circuit 16 for controlling and monitoring the reverse polarity protection transistor group 17 does not control the reverse polarity protection transistor group 17 with a single control line 20 for controlling the reverse polarity protection transistor group 17, but with two control lines 20* and 20**.

[0113] In this case, the gate control circuit 16 controls the switching state of the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 via the control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group 17.

[0114] In this case, the gate control circuit 16 controls the switching state of the second N-channel enhancement transistor of the reverse polarity protection transistor group 17 via the control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group 17.

[0115] The gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can detect the potential of the center terminal 86 of the reverse polarity protection transistor group 17 via a preferably provided center terminal 86 of the reverse polarity protection transistor group 17.

[0116] The gate control circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now detect the potential of the first terminal 18 of the reverse polarity protection transistor group 17 via a preferably provided monitoring line 22.

[0117] The gate control circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now detect the potential of the second terminal 19 of the reverse polarity protection transistor group 17 via a preferably provided monitoring line 21.

[0118] As a result, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can firstly detect and evaluate the voltage between the potential of the first terminal 18 of the reverse polarity protection transistor group 17 and secondly the potential of the second terminal 19 of the reverse polarity protection transistor group 17 and use it for monitoring and measures as previously described.

[0119] Furthermore, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now also, firstly, detect and evaluate the voltage between the potential of the first terminal 18 of the reverse polarity protection transistor group 17 and, secondly, the potential of the center terminal 86 of the reverse polarity protection transistor group 17 and use it for monitoring and measures as previously described.

[0120] Furthermore, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now also, firstly, detect and evaluate the voltage between the potential of the second terminal 19 of the reverse polarity protection transistor group 17 and, secondly, the potential of the center terminal 86 of the reverse polarity protection transistor group 17 and use it for monitoring and measures as previously described.

[0121] As a result, the gate drive circuit 16 and / or the control device 4 can detect and check the switching function of an individual N-channel enhancement transistor of the reverse polarity protection transistor group 17.

[0122] Furthermore, the gate drive circuit 16 and / or the control device 4 can detect the failure of an individual N-channel enhancement transistor of the reverse polarity protection transistor group 17 and initiate timely countermeasures against a fire. For example, depending on the failed N-channel enhancement transistor, the gate drive circuit 16 and / or the control device 4 can switch off the remaining, intact N-channel enhancement transistor of the reverse polarity protection transistor group 17 using the associated control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 or the associated control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group 17, thus preventing heating of the failed transistor and a fire.The gate drive circuit 16 and / or the control device 4 can also take this measure if a temperature sensor signals to them an increased temperature of a device part of the reverse polarity protection circuit or if a higher-level computer system 12 transmits a command to this effect via a data bus 9.

[0123] As in Fig. 3, the reverse polarity protection circuit 1 here has an auxiliary reverse polarity protection transistor group 23 for detecting a current which is proportional to the current 29 through the reverse polarity protection transistor group 17 or corresponds in some other way.

[0124] In this case, the gate control circuit 16 controls the switching state of the first N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 via the control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group 17.

[0125] In this case, the gate control circuit 16 controls the switching state of the second N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 via the control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group 17.

[0126] The gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can detect the potential of the center terminal 87 of the auxiliary reverse polarity protection transistor group 23 via a preferably provided center terminal 87 of the auxiliary reverse polarity protection transistor group 23.

[0127] The gate control circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now detect the potential of the first terminal 18 of the auxiliary reverse polarity protection transistor group 23 via the preferably provided monitoring line 22.

[0128] Via a preferably provided measuring line 25 for detecting the voltage drop across the shunt resistor 24, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now detect the potential of the second terminal of the auxiliary reverse polarity protection transistor group 23 and from this, for example, taking into account the already determined potential of the second terminal 19 of the reverse polarity protection transistor group 17 and the resistance value of the shunt resistor 24 for detecting the current through the auxiliary reverse polarity protection transistor group 23, determine the value of the current 29 through the reverse polarity protection transistor group 17.

[0129] As a result, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can firstly detect and evaluate the voltage between the potential of the first terminal 18 of the reverse polarity protection transistor group 17 and secondly the measuring line 25, which represents the voltage across the auxiliary reverse polarity protection transistor group 23, and use it for monitoring and measures as previously described.

[0130] Furthermore, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now also, firstly, detect and evaluate the voltage between the potential of the first terminal 18 of the reverse polarity protection transistor group 17 and, secondly, the potential of the center terminal 87 of the auxiliary reverse polarity protection transistor group 23 and use it for monitoring and measures as previously described.

[0131] Furthermore, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now also, firstly, detect and evaluate the voltage between the potential of the second terminal 19 of the reverse polarity protection transistor group 17 and, secondly, the potential of the center terminal 87 of the auxiliary reverse polarity protection transistor group 23 and use it for monitoring and measures as previously described.

[0132] As a result, the gate drive circuit 16 and / or the control device 4 can detect and check the switching function of an individual N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23.

[0133] Furthermore, the gate drive circuit 16 and / or the control device 4 can detect the failure of an individual N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 and initiate timely countermeasures against a fire. For example, depending on the failed N-channel enhancement transistor, the gate drive circuit 16 and / or the control device 4 can switch off the remaining, intact N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 using the associated control line 20* for controlling the first N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 or the associated control line 20** for controlling the second N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23, thus preventing heating of the failed transistor and a fire.The gate drive circuit 16 and / or the control device 4 can also take this measure if a temperature sensor signals to them an increased temperature of a device part of the reverse polarity protection circuit or if a higher-level computer system 12 transmits a command to this effect via a data bus 9.

[0134] The auxiliary reverse polarity protection transistor group 23 can also be implemented as a single transistor. This is not shown in the figures, but is part of the technical teaching presented here in the form of a possible design variant. Figure 5a

[0135] Fig. 5a shows, by way of example, the connection between a polarity reversal protection transistor group 17 and the gate drive circuit 16 of a control device 4 of a polarity reversal protection circuit 1. The two body diodes of the two N-channel enhancement transistors of the polarity reversal protection transistor group 17 are connected by their respective anodes to the center terminal 86 of the polarity reversal protection transistor group 17. The cathodes of the body diodes thus point outwards. The gate drive circuit 16 of a control device 4 controls both N-channel enhancement transistors of the polarity reversal protection transistor group 17 via a common control line 20 for controlling the polarity reversal protection transistor group (17). The combination of this technical teaching with that of Fig. 2, Fig. 3, Fig. 6, Fig. 7, Fig. 8, Fig. 10, Fig. 11, Fig. 12, Fig. 17, Fig. 21, Fig. 23, Fig. 24, Fig. 25, Fig. 26, Fig. 27, Fig. 28, Fig. 29, Fig. 30, Fig. 54, Fig. 55, Fig. 56, Fig. 59, Fig. 60, Fig. 61, Fig. 81 instead of the reverse polarity protection transistor group 17 or the auxiliary reverse polarity protection transistor group 23 of the corresponding figure, at least with the signal connections shown here to the gate control circuit 16 of a control device 4 of a reverse polarity protection circuit 1, is part of the disclosure of the document presented here. The person skilled in the art will arrive at this technical teaching by replacing the reverse polarity protection transistor groups 17 or the auxiliary reverse polarity protection transistor groups 23 of the corresponding figure by the circuit of Fig. 82a replaced. Figure 5b

[0136] Fig. 5b shows, by way of example, the connection between a reverse polarity protection transistor group 17 and the gate drive circuit 16 of a control device 4 of a reverse polarity protection circuit 1. The two body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected by their respective anodes to the center terminal 86 of the reverse polarity protection transistor group 17. The cathodes of the body diodes thus point outward. The gate drive circuit 16 of a control device 4 controls the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 via a first control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group (17).The gate drive circuit 16 of a control device 4 controls the second N-channel enhancement transistor of the reverse polarity protection transistor group 17 via a second control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group (17). The advantages of such a circuit are described in the description of the . Fig. 81. The combination of this technical teaching with that of Fig. 2, Fig. 3, Fig. 4 instead of the reverse polarity protection transistor group 17 or the auxiliary reverse polarity protection transistor group 23 of the corresponding figure, at least with the signal connections shown here to the gate control circuit 16 of a control device 4 of a reverse polarity protection circuit 1, is part of the disclosure of the document presented here. The person skilled in the art will arrive at this technical teaching by replacing the reverse polarity protection transistor groups 17 or the auxiliary reverse polarity protection transistor groups 23 of the corresponding figure by the circuit of Fig. 5b replaced. Figure 5c

[0137] Fig. Figure 5c shows, by way of example, the connection between a reverse polarity protection transistor group 17 and the gate drive circuit 16 of a control device 4 of a reverse polarity protection circuit 1. The two body diodes of the two N-channel enhancement transistors of the reverse polarity protection transistor group 17 are connected by their respective cathodes to the center terminal 86 of the reverse polarity protection transistor group 17. The anodes of the body diodes thus point outwards. The circuit is functionally equivalent to that of the Fig. 82b. The gate drive circuit 16 of a control device 4 controls the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 via a first control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group (17). The gate drive circuit 16 of a control device 4 controls the second N-channel enhancement transistor of the reverse polarity protection transistor group 17 via a second control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group (17). The advantages of such a circuit are described in the description of Fig. 81. The combination of this technical teaching with that of Fig. 2, Fig. 3, Fig. 4 instead of the reverse polarity protection transistor group 17 or the auxiliary reverse polarity protection transistor group 23 of the corresponding figure, at least with the signal connections shown here to the gate control circuit 16 of a control device 4 of a reverse polarity protection circuit 1, is part of the disclosure of the document presented here. The person skilled in the art will arrive at this technical teaching by replacing the reverse polarity protection transistor groups 17 or the auxiliary reverse polarity protection transistor groups 23 of the corresponding figure by the circuit of Fig. 5c replaced. Figure 5d

[0138] Fig. Figure 82d shows the usual circuit symbol for an N-channel enhancement transistor. The transistors of the Fig. 82a, Fig. 82b and Fig. 82c and the reverse polarity protection transistor groups 17 and the auxiliary reverse polarity protection transistor groups 23 are intended to include such N-channel enhancement transistors. In these other figures, the channel of the transistors of the reverse polarity protection transistor groups 17 and the auxiliary reverse polarity protection transistor groups 23 is not interrupted to simplify the respective drawings. However, they are intended to be N-channel enhancement transistors. Here, S denotes the source terminal, D the drain terminal, and G the gate terminal. Figure 5e

[0139] Fig. Figure 5e is an example of an alternative functionally equivalent implementation of the N-channel enhancement transistor as an interconnection of a GaN-based depletion-mode MOS-FET transistor (a GaN-based self-conducting depletion-mode field-effect transistor) and a silicon-based N-channel enhancement FET transistor. The advantage of such a functionally equivalent implementation of the N-channel enhancement transistor as an interconnection of a GaN-based depletion-mode MOS-FET transistor and a silicon-based N-channel enhancement FET transistor is a higher switching speed. When the preceding drawings and the preceding description refer to an N-channel enhancement transistor, the person skilled in the art therefore understands the possibility of constructing this N-channel enhancement transistor by interconnecting electronic components in a functionally equivalent manner, as exemplified in this figure, for example.The use of such interconnections instead of N-channel enhancement transistors is therefore part of the disclosure of the document presented here. Figure 6

[0140] Fig. 6 shows a method 300 for using the center terminal 86 for diagnosing the first N-channel enhancement transistor and the second N-channel enhancement transistor of the reverse polarity protection transistor group 17 and for comparing the potentials at their terminals 26, 86, 28, 27*, 27** with the corresponding potentials of the terminals 26, 87, 25, 20*, 20** of the auxiliary reverse polarity protection transistor group 23 and / or for comparing the electrical voltages between the terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17 with the corresponding voltages between the terminals 26, 87, 25, 20*, 20** of the auxiliary reverse polarity protection transistor group 23, taking into account the voltage drop across the Shunt resistor 24 between the potential of the measuring line 25 and the potential of the second terminal 19 of the reverse polarity protection transistor group 17.

[0141] The reverse polarity protection circuit 1 of the Fig. 81 is an exemplary device for applying the method 300 described herein in a reverse polarity protected circuit.

[0142] The computer-implemented method 300 for checking the functionality of the reverse polarity protection transistor group 17 begins with the provision 310 of the reverse polarity protected circuit, which comprises the reverse polarity protection circuit 1 with the control device 4 and the reverse polarity protection transistor group 17 and preferably the auxiliary reverse polarity protection transistor group 23 with the shunt resistor 24.

[0143] Before starting the computer-implemented method 300 for checking the functionality of the polarity reversal protection transistor group 17, in an optional step 320 the control device signals the planned execution of the computer-implemented method 300 for checking the functionality of the polarity reversal protection transistor group 17 to the application circuit 83, preferably via the data bus 9 or other signaling lines. As a result, the application circuit 83 can prepare for the impending short-term failure of the energy supply and, firstly, reduce the energy requirement in a controlled manner and / or switch the energy supply of the application circuit 83 to an energy reserve of the application circuit 83 and / or deliberately reduce the operation of the application circuit and / or switch to a different energy supply of the application circuit 83 and / or communicate this test to the control device 4 of the polarity reversal protection circuit 1 by means of a signal, e.g.B. via the data bus 9 or other signal lines from the application circuit 83 to the control device 4 of the reverse polarity protection circuit 1.

[0144] If the application circuit sends a start signal and / or if a certain time has passed and / or if the power supply is switched on for the first time and / or if the previous signaling step 320 is skipped, the control device 4 of the reverse polarity protection circuit 1 starts 330 the execution of the computer-implemented method 300 for checking the functionality of the reverse polarity protection transistor group 17.

[0145] Preferably, the computer-implemented method 300 for checking the functionality of the polarity reversal protection transistor group 17 comprises a step 340 of blocking the first N-channel enhancement transistor of the polarity reversal protection transistor group 17 and simultaneously blocking the second N-channel enhancement transistor of the polarity reversal protection transistor group 17' and measuring the potentials at their terminals 26, 86, 28, 27*, 27** of the polarity reversal protection transistor group 17' and comparing the potentials at their terminals 26, 86, 28, 27*, 27** of the polarity reversal protection transistor group 17' with predetermined values ​​and / or otherwise generated reference values. In this case, the gate drive circuit 16 of the control device 4 preferably controls the switching state of the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 via the control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group 17.The gate drive circuit 16 of the control device 4 controls the switching state of the second N-channel enhancement transistor of the reverse polarity protection transistor group 17 via the control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group 17. Via a preferably provided center terminal 86 of the reverse polarity protection transistor group 17, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can detect the potential of the center terminal 86 of the reverse polarity protection transistor group 17. Via a preferably provided monitoring line 22, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now detect the potential of the first terminal 18 of the reverse polarity protection transistor group 17.The gate control circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now detect the potential of the second terminal 19 of the reverse polarity protection transistor group 17 via a preferably provided monitoring line 21.

[0146] Preferably, the computer-implemented method 300 for checking the functionality of the reverse polarity protection transistor group 17 comprises a step 350 of switching on the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 and simultaneously blocking the second N-channel enhancement transistor of the reverse polarity protection transistor group 17' and measuring the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' and comparing the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' with predetermined values ​​and / or otherwise generated reference values.

[0147] Preferably, the computer-implemented method 300 for checking the functionality of the reverse polarity protection transistor group 17 comprises a step 360 of blocking the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 and simultaneously switching on the second N-channel enhancement transistor of the reverse polarity protection transistor group 17' and measuring the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' and comparing the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' with predetermined values ​​and / or otherwise generated reference values.

[0148] Preferably, the computer-implemented method 300 for checking the functionality of the reverse polarity protection transistor group 17 comprises a step 370 of switching on the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 and the simultaneous switching on of the second N-channel enhancement transistor of the reverse polarity protection transistor group 17' and a measurement of the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' and a comparison of the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' with predetermined values ​​and / or otherwise generated reference values.

[0149] As a result, the gate drive circuit 16 and / or the control device 4 of the polarity reversal protection circuit 1 can firstly detect and evaluate the voltage between the potential of the first terminal 18 of the polarity reversal protection transistor group 17 and secondly the potential of the second terminal 19 of the polarity reversal protection transistor group 17 and use it for monitoring and measures as previously described.

[0150] Furthermore, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now also, firstly, detect and evaluate the voltage between the potential of the first terminal 18 of the reverse polarity protection transistor group 17 and, secondly, the potential of the center terminal 86 of the reverse polarity protection transistor group 17 and use it for monitoring and measures as previously described.

[0151] Furthermore, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now also, firstly, detect and evaluate the voltage between the potential of the second terminal 19 of the reverse polarity protection transistor group 17 and, secondly, the potential of the center terminal 86 of the reverse polarity protection transistor group 17 and use it for monitoring and measures as previously described.

[0152] As a result, the gate drive circuit 16 and / or the control device 4 can detect and check the switching function of an individual N-channel enhancement transistor of the reverse polarity protection transistor group 17.

[0153] Preferably, the computer-implemented method 300 for checking the functionality of the reverse polarity protection transistor group 17 comprises an optional step 380 of signaling, preferably via the data bus 9 or other signaling lines, about the successful execution of the computer-implemented method 300 for checking the functionality of the reverse polarity protection transistor group 17 to the application circuit 83 by the control device 4 of the reverse polarity protection circuit 1 if the control device 4 of the reverse polarity protection circuit 1 has not detected an error.As a result, the application circuit 83 can switch back to normal operation and, firstly, normalize the energy requirement in a controlled manner and / or switch the energy supply of the application circuit 83 from the energy reserve of the application circuit 83 back to a power supply via the polarity reversal protection circuit and / or switch the operation of the application circuit on and start up again and / or switch from the other energy supply of the application circuit 83 back to the energy supply via the polarity reversal protection circuit and / or recharge the energy reserve of the application circuit 83 via the polarity reversal protection circuit 1.

[0154] Furthermore, the gate drive circuit 16 and / or the control device 4 can detect 390 the failure of an individual N-channel enhancement transistor of the reverse polarity protection transistor group 17 or another fault of the reverse polarity protection circuit 1 and initiate timely countermeasures against a fire 395. For example, depending on the failed N-channel enhancement transistor, the gate drive circuit 16 and / or the control device 4 can switch off the remaining, intact N-channel enhancement transistor of the reverse polarity protection transistor group 17 by means of the associated control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 or the associated control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group 17, so that heating of the failure of the transistor and a fire is avoided.The gate drive circuit 16 and / or the control device 4 can also take this measure if a temperature sensor signals to them an increased temperature of a device part of the reverse polarity protection circuit or if a higher-level computer system 12 transmits a command to this effect via a data bus 9.

[0155] As in Fig. 3, the reverse polarity protection circuit 1 here has an auxiliary reverse polarity protection transistor group 23 for detecting a current which is proportional to the current 29 through the reverse polarity protection transistor group 17 or corresponds in some other way.

[0156] In this case, the gate control circuit 16 controls the switching state of the first N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 via the control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group 17.

[0157] In this case, the gate control circuit 16 controls the switching state of the second N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 via the control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group 17.

[0158] The gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can detect the potential of the center terminal 87 of the auxiliary reverse polarity protection transistor group 23 via a preferably provided center terminal 87 of the auxiliary reverse polarity protection transistor group 23.

[0159] The gate control circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now detect the potential of the first terminal 18 of the auxiliary reverse polarity protection transistor group 23 via the preferably provided monitoring line 22.

[0160] Via a preferably provided measuring line 25 for detecting the voltage drop across the shunt resistor 24, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now detect the potential of the second terminal of the auxiliary reverse polarity protection transistor group 23 and from this, for example, taking into account the already determined potential of the second terminal 19 of the reverse polarity protection transistor group 17 and the resistance value of the shunt resistor 24 for detecting the current through the auxiliary reverse polarity protection transistor group 23, determine the value of the current 29 through the reverse polarity protection transistor group 17.

[0161] As a result, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can firstly detect and evaluate the voltage between the potential of the first terminal 18 of the reverse polarity protection transistor group 17 and secondly the measuring line 25, which represents the voltage across the auxiliary reverse polarity protection transistor group 23, and use it for monitoring and measures as previously described.

[0162] Furthermore, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now also, firstly, detect and evaluate the voltage between the potential of the first terminal 18 of the reverse polarity protection transistor group 17 and, secondly, the potential of the center terminal 87 of the auxiliary reverse polarity protection transistor group 23 and use it for monitoring and measures as previously described.

[0163] Furthermore, the gate drive circuit 16 and / or the control device 4 of the reverse polarity protection circuit 1 can now also, firstly, detect and evaluate the voltage between the potential of the second terminal 19 of the reverse polarity protection transistor group 17 and, secondly, the potential of the center terminal 87 of the auxiliary reverse polarity protection transistor group 23 and use it for monitoring and measures as previously described.

[0164] As a result, the gate drive circuit 16 and / or the control device 4 can detect and check the switching function of an individual N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23.

[0165] Furthermore, the gate drive circuit 16 and / or the control device 4 can detect the failure of an individual N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 and initiate timely countermeasures against a fire. For example, depending on the failed N-channel enhancement transistor, the gate drive circuit 16 and / or the control device 4 can switch off the remaining, intact N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 using the associated control line 20* for controlling the first N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 or the associated control line 20** for controlling the second N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23, thus preventing heating of the failed transistor and a fire.The gate drive circuit 16 and / or the control device 4 can also take this measure if a temperature sensor signals to them an increased temperature of a device part of the reverse polarity protection circuit or if a higher-level computer system 12 transmits a command to this effect via a data bus 9.

[0166] The auxiliary reverse polarity protection transistor group 23 can also be implemented as a single transistor. This is not shown in the figures, but is part of the technical teaching presented here in the form of a possible design variant.

[0167] The control device can check the functionality of the auxiliary reverse polarity protection transistor group 23 by means of an analogue computer-implemented method for checking the auxiliary reverse polarity protection transistor group 23. The technically trained person can, among other things, carry out this analogue computer-implemented method for checking the auxiliary reverse polarity protection transistor group 23 by 1. the replacement of the reverse polarity protection transistor group 17 by the auxiliary reverse polarity protection transistor group 23 and 2. replacing the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 with the first N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 and 3. replacing the second N-channel enhancement transistor of the reverse polarity protection transistor group 17 with the second N-channel enhancement transistor of the auxiliary reverse polarity protection transistor group 23 and 4. replacing the center terminal 86 of the reverse polarity protection transistor group 17 with the center terminal 87 of the auxiliary reverse polarity protection transistor group 23 and 5. replacing the second terminal 28 of the reverse polarity protection transistor group 17 with the measuring line 25 for detecting the voltage drop across the shunt resistor 24 and 6. replacing the control terminal 27* of the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 by the control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 and 7. replacing the control terminal 27** of the second N-channel enhancement transistor of the reverse polarity protection transistor group 17 by the control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group 17 in the computer-implemented method described above.

[0168] The program code for these computer-implemented methods is preferably stored at least temporarily in one or more memories 14, 15 of the control device 4 of the reverse polarity protection circuit 1. The computer core 2 of the reverse polarity protection circuit retrieves this program code from the memories 14, 15 of the control device 4 of the reverse polarity protection circuit 1 when executing the computer-implemented methods presented in this document and preferably executes them, if necessary using other device components of the reverse polarity protection circuit 1 and / or the control device 4.

[0169] Accordingly, the document presented here discloses a storage medium, for example the memories 14, 15, which has or includes the program code for these computer-implemented methods.

[0170] A memory 14, 15 of the control device 4 of the reverse polarity protection circuit 1 can therefore be designed to be programmable and / or replaceable.

[0171] The document presented here therefore discloses a computer program product that comprises program code and / or code that can be converted to the program code, wherein the program code comprises program code of the computer-implemented methods presented here. List of reference symbols 1 electronic reverse polarity protection circuit; 2 computer core, especially microcontroller; 3 tax system; 4 control device; 5 Power supply / boost converter with a control reverse polarity protection circuit 81 for reverse polarity protection of the control device 4; 6 Operating voltage (positive supply voltage line to supply voltage potential relative to the reference potential); 7 Emergency power supply; 8 energy reserve; 9 external data bus; 10 Data bus interface. The data bus interface can be a data bus transceiver to a wired data bus or a wireless data interface, in particular an optical data interface to an optical data connection. 11 internal data bus 12 higher-level computer system, in particular of the vehicle. The higher-level computer system can be identical to a control device (4) of a reverse polarity protection circuit of the reverse polarity protection circuits of a supply network; 13 Watchdog, especially watchdog timer. This can be the watchdog 4104.5 of the quantum random number generator 60, 4100; 14 Non-volatile memory. The non-volatile memory may include, for example, a flash memory, an EEPROM, a ROM, or the like. 15 Volatile random access memory. The random access memory may be, for example, a RAM, an SRAM, a DRAM, an FRAM, an MRAM, or the like; 16 Gate control circuit for controlling and monitoring the reverse polarity protection transistor group (17); 17 Reverse polarity protection transistor group, also called circuit breaker; 18 first connection of the reverse polarity protection transistor group (17); 19 second connection of the reverse polarity protection transistor group (17); 20 Control line 20 for controlling the reverse polarity protection transistor group (17); 20* Control line 20* for controlling the first N-channel enhancement transistor of the reverse polarity protection transistor group (17); 20** Control line 20** for controlling the second N-channel enhancement transistor of the reverse polarity protection transistor group (17); 21 monitoring line for detecting the voltage between the second terminal (19) of the reverse polarity protection transistor group (17) and the control line (20) of the reverse polarity protection transistor group (17); 22 monitoring line for detecting the voltage between the first terminal (18) of the reverse polarity protection transistor group (17) and the control line (20) of the second reverse polarity protection transistor group (17); 23 Auxiliary reverse polarity protection transistor group 23 for detecting a current which is proportional to or otherwise corresponds to the current (29) through the reverse polarity protection transistor group (17); 24 Shunt resistor for detecting the current through the auxiliary reverse polarity protection transistor group 23; 25 Measuring line for measuring the voltage drop across the shunt resistor 24; 26 first connection of the reverse polarity protection transistor group 17; 27 Control terminal of the reverse polarity protection transistor group 17; 27* Control terminal of the first N-channel enhancement transistor of the reverse polarity protection transistor group 17; 27** Control terminal of the second N-channel enhancement transistor of the reverse polarity protection transistor group 17; 28 second connection of the reverse polarity protection transistor group 17; 29 Current through the reverse polarity protection transistor group 17; 30 oscillator and clock generator which supplies the control device (4) of the respective reverse polarity protection circuit with a clock; 35 Timer and / or clock of the control device (4); 36 electric current through the shunt resistor (24); 40 temperature sensor; 60 Quantum random number generator (QRNG=quantum random number generator) or true random number generator (TRNG=true random number generator) or random number generator (RNG=random number generator) or pseudo random number generator (PRNG=pseudo random number generator) 81 one or more control reverse polarity protection circuits (ground circuits, reverse polarity protection). A control reverse polarity protection circuit can comprise a rectifier in the form of a single diode and / or a diode bridge, for example in the form of a Graetz bridge, which rectifies the supply voltage between the positive supply voltage line and the negative supply voltage line (ground line) and makes it available to the control device 4 and / or an energy reserve 8, for example in the form of a capacitor, for bridging power supply gaps and continuously supplying power to the electronic reverse polarity protection circuit 1; 83 Application switching; 86 Center terminal 86 of the reverse polarity protection transistor group 17; 87 Center terminal 87 of the auxiliary reverse polarity protection transistor group 23; 100 N-channel enhancement reverse polarity protection transistor; 101 Charge pump 100 for supplying the single N-channel enhancement reverse polarity protection transistor 100. 102 Reverse Polarity Detection; 103 Surge protection (V GS -Protection); 104 passive safety shutdown resistor (discharge gate); 105 Charge pump. The application circuit 83 typically provides the charge pump 105 in the prior art. If this is not the case, the document presented here proposes the implementation of such a charge pump in the voltage supply 5 of the control device 4 together with a stabilizing energy reserve 8. The purpose of the charge pump 105 in the prior art or of the charge pump in the voltage supply 5 of the proposed control device 4 is to achieve a voltage level of, for example, preferably at least 10 V above the positive supply voltage (V bat) of the positive supply voltage line 6 relative to the negative supply voltage line 201 in order to be able to switch the N-channel enhancement transistors of the protection devices presented here precisely and safely. 106 simple reverse polarity protection circuit. Such a reverse polarity protection circuit 106 is typically not used in systems whose terminals have more than one negative supply voltage line (GND) and one positive supply voltage line 1 (V BAT ). Such configurations with more than one supply voltage are found, for example, in automotive data bus systems, such as LIN data bus systems or similar. Such data buses comprise a current-modulated data signal that can be considered a supply voltage signal. 201 Reference potential node. The reference potential node is typically the vehicle's ground. For clarity, the reference potential node is not always shown in the figures, nor is it always designated by the reference symbol. The circuit symbol for ground indicates the reference potential node in the figures, where shown. 300 exemplary computer-implemented method 300 for checking the functionality of the reverse polarity protection transistor group 17; 310 Provision 310 of the reverse polarity protected circuit, which connects the reverse polarity protection circuit 1 with the control device 4 and the reverse polarity protection transistor group 17 and preferably the auxiliary reverse polarity protection transistor group 23 with the shunt resistor 24; 320 optional signaling 320 of the planned execution of the computer-implemented method for checking the functionality of the reverse polarity protection transistor group 17 in an optional step by the control device to the application circuit 83, wherein the signaling preferably takes place via the data bus 9 or other signaling lines; 330 Start 330 of the execution of the computer-implemented method for checking the functionality of the reverse polarity protection transistor group 17, preferably by the control device 4 of the reverse polarity protection circuit 1; 340 Step 340 of blocking the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 and of simultaneously blocking the second N-channel enhancement transistor of the reverse polarity protection transistor group 17' and of subsequently measuring the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' and of subsequently comparing the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' with predetermined values ​​and / or otherwise generated reference values; 350 Step 350 of switching on the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 and simultaneously blocking the second N-channel enhancement transistor of the reverse polarity protection transistor group 17' and subsequently measuring the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' and subsequently comparing the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' with predetermined values ​​and / or otherwise generated reference values; 360 Step 360 of blocking the first N-channel enhancement transistor of the polarity reversal protection transistor group 17 and simultaneously switching on the second N-channel enhancement transistor of the polarity reversal protection transistor group 17' and subsequently measuring the potentials at their terminals 26, 86, 28, 27*, 27** of the polarity reversal protection transistor group 17' and subsequently comparing the potentials at their terminals 26, 86, 28, 27*, 27** of the polarity reversal protection transistor group 17' with predetermined values ​​and / or otherwise generated reference values; 370 Step 370 of switching on the first N-channel enhancement transistor of the reverse polarity protection transistor group 17 and of simultaneously switching on the second N-channel enhancement transistor of the reverse polarity protection transistor group 17' and of subsequently measuring the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' and of subsequently comparing the potentials at their terminals 26, 86, 28, 27*, 27** of the reverse polarity protection transistor group 17' with predetermined values ​​and / or otherwise generated reference values; 380 optional step 380 of signaling, preferably via the data bus 9 or other signaling lines, about the successful execution of the computer-implemented method for checking the functionality of the reverse polarity protection transistor group 17 to the application circuit 83 by the control device 4 of the reverse polarity protection circuit 1, if the control device 4 of the reverse polarity protection circuit 1 has not detected an error; 390 Detection 390 of the failure of an individual N-channel enhancement transistor of the reverse polarity protection transistor group 17 or of another fault of the reverse polarity protection circuit 1, in particular by the gate drive circuit 16 and / or the control device 4; 395 Taking 395 countermeasures, in particular by the gate drive circuit 16 and / or the control device 4, if the control device 4 of the reverse polarity protection circuit 1 has detected an error; Concluding remarks

[0172] The above description is not exhaustive and does not limit this disclosure to the examples shown. Those having ordinary skill in the art can deduce, understand, and practice other co-disclosed variations of the specific sample examples described in this document based on the drawings, the disclosure, and the claims. The indefinite articles "a" or "an" and their inflections do not exclude a plurality, while the mention of a certain number of elements does not exclude the possibility of more or fewer elements being present. A single unit can perform the functions of several elements mentioned in the disclosure, and conversely, several elements can perform the function of a unit.Numerous alternatives, equivalents, variations and combinations are possible without departing from the scope of the present disclosure.

[0173] Unless otherwise stated, those with ordinary specialist knowledge in the field can freely combine all features of the present invention, provided that such combinations are sensible. This applies to the entire document presented here. Those with ordinary specialist knowledge in the field can also freely combine the features described in the description of the figures, unless otherwise stated, as features of the invention with the other features. A restriction of individual features of the exemplary embodiments to the combination with other features of the exemplary embodiments is expressly not intended. Furthermore, physical features of the device can also be reformulated as method features, and method features can be reformulated as physical features of the device. Such a reformulation is therefore automatically disclosed.

[0174] In the foregoing detailed description, reference is made to the accompanying figures. Those having ordinary skill in the art should consider the examples in the description and figures as illustrative and not as limiting the specific example or element described. Those having ordinary skill in the art may derive several examples from the foregoing description and / or figures and / or claims by modifying, combining, or varying certain elements. Furthermore, a person skilled in the art may derive examples or elements that the document presented herein does not literally describe from the description and / or drawings and / or claims.

[0175] Those with ordinary specialist knowledge in the field can combine features disclosed at different points in this document, and in particular in the list of features, provided that this combination makes sense. The references used in the list of features are exemplary and expressly do not limit the disclosure of possible features and sub-feature combinations. The applicable claim arises from the claims. Those with ordinary specialist knowledge in the field should use the relevant text passages to interpret the claims. Even if no device is disclosed at the corresponding points in this text relating to methods and method steps that perform this method step, this document hereby discloses a device and / or a device part that can perform this method step.Those with ordinary skill in the art may combine this device part with other devices and / or device parts where appropriate. The functions of the devices and device parts disclosed in this document correspond to method steps performed by these device parts. Those with ordinary skill in the art may combine these method steps with each other and with method steps to form methods. Such methods are expressly incorporated into the disclosure. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Zitierte Nicht-Patentliteratur

[0000] ISO 7637-1 - „Road vehicles - Electrical disturbance from conduction and coupling - Part 1: Definitions and general considerations“ (Stand:01-10.2015) Third edition

[0004] ISO 7637-2:2011-03 - „Road vehicles - Electrical disturbance from conduction and coupling - Part 2: Electrical transient conduction along supply lines only [0004, 0039] ISO 7637-3:2016 -„Road vehicles - Electrical disturbance from conduction and coupling - Part 3: Electrical transient transmission by capacitive and inductive coupling via lines other than suppply lines“ (3. Edition

[0004] ISO 7637-3 Techn. corrigendum -only for info- „Road vehicles - Electrical disturbance from conduction and coupling [0004, 0039] DIN-Norm DIN 31000 (VDE 1000):2017-04

[0004] ISO 7637-1 - Road vehicles - Electrical disturbance from conduction and coupling - Part 1: Definitions and general considerations" (Stand:01-10.2015) Third edition

[0039] ISO 7637-3:2016 - „Road vehicles - Electrical disturbance from conduction and coupling - Part 3: Electrical transient transmission by capacitive and inductive coupling via lines other than suppply lines (3. Edition

[0039]

Claims

[1] Reverse polarity protected electronic circuit with a negative supply voltage line on a reference potential and with a positive supply voltage line at a positive supply voltage potential relative to the reference potential and with an electrical application circuit, wherein the electrical application circuit has a positive power supply terminal and wherein the electrical application circuit has a negative power supply terminal and wherein the negative supply voltage line is connected to the one negative power supply terminal and with a reverse polarity protection circuit (1), wherein the reverse polarity protection circuit (1) is connected between the positive supply voltage line and the positive power supply terminal of the electrical application circuit, characterized by that the reverse polarity protection circuit (1) comprises a first N-channel enhancement transistor of a reverse polarity protection transistor group (17) and that the reverse polarity protection circuit comprises a second N-channel enhancement transistor of the reverse polarity protection transistor group (17) and wherein the reverse polarity protection transistor group (17) comprises the first N-channel enhancement transistor and the second N-channel enhancement transistor and wherein the first N-channel enhancement transistor and the second N-channel enhancement transistor in the reverse polarity protection transistor group (17) are electrically connected anti-serially via a center terminal of the reverse polarity protection circuit (1) and wherein the reverse polarity protection circuit (1) comprises a control device (4) in addition to the reverse polarity protection transistor group (17) and wherein the positive supply voltage line is connected to the control device (4) and wherein the negative supply voltage line is connected to the control device (4) and wherein the control device (4) generates a potential of the gate terminal of the first N-channel enhancement transistor of the polarity reversal protection transistor group (17) above the potential of the positive supply voltage line and above the potential of the center terminal of the polarity reversal protection circuit (1) when the polarity is correct, and wherein the control device, when connected with the correct polarity, generates a potential of the gate terminal of the second N-channel enhancement transistor of the reverse polarity protection transistor group (17) above the potential of the positive supply voltage line and above the potential of the center terminal of the reverse polarity protection circuit (1) and wherein the control device (4) has its own additional control reverse polarity protection circuit (81), so that Firstly, in the case of incorrect polarity connection, the control device does not raise the potential of the gate terminal of the first N-channel enhancement transistor above the potential of the positive supply voltage line or above the potential of the center terminal of the reverse polarity protection circuit, and Secondly, if the polarity is not correct, the control device does not raise the potential of the gate terminal of the second N-channel enhancement transistor above the potential of the positive supply voltage line or above the potential of the center terminal of the reverse polarity protection circuit. [2] Reverse polarity protected electronic circuit according to claim 1 wherein this anti-serial connection of the first N-channel enhancement transistor and the second N-channel enhancement transistor either means first, - that in the reverse polarity protection transistor group (17) the cathode of the body diode of the first N-channel enhancement transistor is connected to the drain terminal of the first N-channel enhancement transistor and - that in the reverse polarity protection transistor group (17) the cathode of the body diode of the second N-channel enhancement transistor is connected to the drain terminal of the second N-channel enhancement transistor and - that in the polarity reversal protection transistor group (17) the anode of the body diode of the first N-channel enhancement transistor is connected to the source terminal of the first N-channel enhancement transistor and - that in the reverse polarity protection transistor group (17) the anode of the body diode of the second N-channel enhancement transistor is connected to the source terminal of the second N-channel enhancement transistor of the reverse polarity protection circuit and - that in the reverse polarity protection transistor group (17) the source terminal of the first N-channel enhancement transistor is connected to the source terminal of the second N-channel enhancement transistor as the center terminal of the reverse polarity protection circuit and - that in the reverse polarity protection transistor group (17) the drain terminal of the first N-channel enhancement transistor is connected to the positive supply voltage line and - that in the reverse polarity protection transistor group (17) the drain terminal of the second N-channel enhancement transistor is connected to the positive power supply terminal of the electrical application circuit or secondly, - that in the reverse polarity protection transistor group (17) the cathode of the body diode of the first N-channel enhancement transistor is connected to the drain terminal of the first N-channel enhancement transistor and - that in the reverse polarity protection transistor group (17) the cathode of the body diode of the second N-channel enhancement transistor is connected to the drain terminal of the second N-channel enhancement transistor and - that in the polarity reversal protection transistor group (17) the anode of the body diode of the first N-channel enhancement transistor is connected to the source terminal of the first N-channel enhancement transistor and - that in the reverse polarity protection transistor group (17) the anode of the body diode of the second N-channel enhancement transistor is connected to the source terminal of the second N-channel enhancement transistor of the reverse polarity protection circuit and - that in the reverse polarity protection transistor group (17), the drain terminal of the first N-channel enhancement transistor is connected to the drain terminal of the second N-channel enhancement transistor as the center terminal of the reverse polarity protection circuit, and - that in the reverse polarity protection transistor group (17) the source terminal of the first N-channel enhancement transistor is connected to the positive supply voltage line and - that in the reverse polarity protection transistor group (17) the source terminal of the second N-channel enhancement transistor is connected to the positive power supply terminal of the electrical application circuit. [3] Reverse polarity protected electronic circuit according to claim 1 or 2, characterized by that the control device (4) is designed to be self-safe. [4] Reverse polarity protected electronic circuit according to claim 3, characterized by that the control device (4) is designed to be HF-safe. [5] Reverse polarity protected electronic circuit according to claim 4, characterized bythat the voltage supply of the control device (4) is provided from a supply voltage line via a low-pass circuit, which can in particular be part of the control reverse polarity protection circuit (81). [6] Reverse polarity protected electronic circuit according to claim 5, characterized by in that the low-pass circuit firstly comprises one or more reverse polarity protection diodes and / or one or more rectifiers and / or one or more Graetz bridges and / or one or more rectifying components or the like, which may be part of the control reverse polarity protection circuit (81), and secondly comprises one or more subsequent capacitors and / or one or more energy reserves, wherein one or more of the energy reserves may be chargeable. [7] Reverse polarity protected electronic circuit according to one of claims 1 to 6, characterized by, wherein the control device (4) is configured to detect the voltage between the potential of the positive supply voltage line and the negative supply voltage line, and wherein the control device (4) is configured to switch off the first N-channel enhancement transistor and / or the second N-channel enhancement transistor and / or the reverse polarity protection transistor group (17) when the voltage value of the detected voltage between the potential of the positive supply voltage line and the negative supply voltage line and / or a simple or multiple time derivative thereof reaches an inadmissible value. [8] Reverse polarity protected electronic circuit according to claim 7, characterized by, wherein the control device (4) is configured to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor and / or the reverse polarity protection transistor group (17) back on when the voltage value of the detected voltage between the potential of the positive supply voltage line and the negative supply voltage line and / or a simple or multiple time derivative thereof again reaches a permissible value. [9] Reverse polarity protected electronic circuit according to claim 7 or 8, characterized by, wherein the control device (4) is configured to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor and / or the reverse polarity protection transistor group (17) on again after a predetermined or programmable waiting time when the voltage value of the detected voltage between the potential of the positive supply voltage line and the negative supply voltage line and / or a simple or multiple time derivative thereof again reaches a permissible value. [10] Reverse polarity protected electronic circuit according to one of claims 1 to 9, characterized by, wherein the control device (4) is configured to detect the voltage between the potential of the positive supply voltage line and the positive energy supply terminal of the electrical application circuit, and wherein the control device (4) is configured to switch off the first N-channel enhancement transistor and / or the second N-channel enhancement transistor and / or the reverse polarity protection transistor group (17) when the voltage value of the voltage between the potential of the positive supply voltage line and the positive energy supply terminal of the electrical application circuit and / or a simple or multiple time derivative thereof reaches an inadmissible value. [11] Reverse polarity protected electronic circuit according to claim 10, characterized by, wherein the control device (4) is configured to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor and / or the reverse polarity protection transistor group (17) back on when the voltage value of the detected voltage between the potential of the positive supply voltage line and the positive power supply terminal of the electrical application circuit and / or a simple or multiple time derivative thereof again reaches a permissible value. [12] Reverse polarity protected electronic circuit according to claim 10 or 11, characterized by, wherein the control device (4) is configured to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor and / or the reverse polarity protection transistor group (17) on again after a predetermined or programmable waiting time when the voltage value of the detected voltage between the potential of the positive supply voltage line and the positive power supply terminal of the electrical application circuit and / or a simple or multiple time derivative thereof again reaches a permissible value. [13] Reverse polarity protected electronic circuit according to one of claims 1 to 12, characterized by, wherein the control device (4) is configured to detect the electrical current from the positive supply voltage line into the positive power supply terminal of the electrical application circuit, and wherein the control device (4) is configured to switch off the first N-channel enhancement transistor and / or the second N-channel enhancement transistor and / or the reverse polarity protection transistor group (17) when the current value of the electrical current from the positive supply voltage line into the positive power supply terminal of the electrical application circuit and / or a simple and / or multiple time derivative thereof and / or the square thereof and / or a simple or multiple integral and / or a simple or multiple integral of the square thereof and / or a value of a polynomial from these values with value-specific polynomial coefficients reaches an impermissible value. [14] Reverse polarity protected electronic circuit according to claim 13, characterized by , wherein the control device (4) is configured to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor and / or the polarity reversal protection transistor group (17) back on when the current value of the electrical current from the positive supply voltage line into the positive power supply terminal of the electrical application circuit and / or a simple and / or multiple time derivative thereof and / or the square thereof and / or a simple or multiple integral and / or a simple or multiple integral of the square thereof and / or a value of a polynomial from these values with value-specific polynomial coefficients again reaches a permissible value. [15] Reverse polarity protected electronic circuit according to claim 13 or 14, characterized by, wherein the control device (4) is configured to switch the first N-channel enhancement transistor and / or the second N-channel enhancement transistor and / or the polarity reversal protection transistor group (17) back on after a predetermined or programmable waiting time when the current value of the electrical current from the positive supply voltage line into the positive power supply terminal of the electrical application circuit and / or a simple and / or multiple time derivative thereof and / or the square thereof and / or a simple or multiple integral and / or a simple or multiple integral of the square thereof and / or a value of a polynomial from these values with value-specific polynomial coefficients again reaches a permissible value. [16] Computer-implemented method (300) for testing a reverse polarity protection transistor group (17) of a reverse polarity protected circuit according to one of the preceding claims, comprising the steps: Providing (310) the reverse polarity protected circuit; optional signaling (320) of the planned execution of the computer-implemented method for checking the functionality of the reverse polarity protection transistor group (17); Starting (330) the execution of the computer-implemented method for checking the functionality of the reverse polarity protection transistor group (17); Perform at least two of the steps: - step (340) of blocking the first N-channel enhancement transistor of the reverse polarity protection transistor group (17) and of simultaneously blocking the second N-channel enhancement transistor of the reverse polarity protection transistor group (17) and checking potentials and voltages on and / or in the reverse polarity protection transistor group (17); - step (350) of switching on the first N-channel enhancement transistor of the reverse polarity protection transistor group (17) and simultaneously blocking the second N-channel enhancement transistor of the reverse polarity protection transistor group (17) and checking potentials and voltages on and / or in the reverse polarity protection transistor group (17); - step (360) of blocking the first N-channel enhancement transistor of the reverse polarity protection transistor group (17) and simultaneously switching on the second N-channel enhancement transistor of the reverse polarity protection transistor group (17) and checking potentials and voltages on and / or in the reverse polarity protection transistor group (17); - step (370) of switching on the first N-channel enhancement transistor of the reverse polarity protection transistor group (17) and of simultaneously switching on the second N-channel enhancement transistor of the reverse polarity protection transistor group (17) and checking potentials and voltages on and / or in the reverse polarity protection transistor group (17); optional step (380) of signaling the successful execution of the computer-implemented method if no error detection has occurred, and taking (395) countermeasures if an error detection has occurred;

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