PERFORMANCE MODULE

Abstract

A power module (20) is provided. The power module (20) comprises: a semiconductor chip (32, 42); and a fluid-tight housing (22) enclosing an interior (30) of the housing (22) and having an inlet (92) for introducing a cooling medium into the interior (30) and an outlet (94) for draining the cooling medium from the interior (30), wherein a first side of the housing (22) is formed at least partially by a busbar board (24) for electrically coupling the power module (20) to one or more external devices, wherein a second side of the housing (22) opposite the first side of the housing (22) is formed at least partially by a driver board (26) for controlling the semiconductor chip (32, 42), wherein the busbar board (24) is mechanically coupled to the driver board (26) by a frame (28) of the housing (22), wherein the semiconductor chip (32,42) is arranged within the interior (30) of the housing (22) on the driver board (26) so that the semiconductor chip (32, 42) can be cooled by the cooling medium, and wherein the semiconductor chip (32, 42) is electrically coupled to the driver board (26) and the bus board (24).

Description

[0001] The invention relates to a power module. The power module can be an electrical converter, e.g., an inverter or a rectifier, and / or can form or comprise one or more half-bridges.

[0002] A conventional power module may include a carrier, at least one semiconductor chip mounted on the carrier, and a driver board arranged over the semiconductor chip. The carrier may include a direct bonded copper (DBC) substrate or an insulated metal substrate (IMS). The carrier may include or be a heat sink. The driver board may be configured to electrically contact and / or control the semiconductor chip. The semiconductor chip may be a high-performance semiconductor chip.

[0003] As technology advances, semiconductor chips are becoming smaller and smaller. However, these semiconductor chips must handle the same or even higher currents than before. Thus, the power density in the semiconductor chips is becoming ever greater. This increasing power density leads to increased heat generation during operation of the power modules. This heat can impair the semiconductor chips and / or their functions, particularly if the semiconductor chips are based on SiC, GaN, or GaO, for example, and / or if one of the semiconductor chips is a high-performance semiconductor chip. This can lead to a reduction in the service life, reliability, and / or performance of the semiconductor chips and thus of the corresponding power module.

[0004] Furthermore, in the conventional power module, the semiconductor chips can be electrically coupled to the carrier, the driver board, and / or each other via corresponding wire bonds. However, the wire bonds can introduce high inductance into the power module when the power module is in operation. Furthermore, wire bond lift-off and / or solder fatigue can limit the reliability of the corresponding electrical connections and thus the power module. Due to different coefficients of thermal expansion (CTEs) between the semiconductor chips and the wire bonds that include or are made of aluminum, cracks can also develop between the semiconductor chips and the corresponding wire bonds (CTE of semiconductor chip ≈ 4×10-6 / °C, CTE of aluminum ≈ 23×10-6 / °C). This can lead to a reduction in the lifetime, reliability, and / or performance of the semiconductor chips and thus the power module.

[0005] Therefore, an object of the present invention is to provide a power module which has a long lifetime, good reliability and / or high performance and which in particular provides very good heat dissipation from a semiconductor chip of the power module.

[0006] The problem is solved by the subject matter of the independent claim. Advantageous embodiments are recited in the dependent claims.

[0007] One aspect relates to a power module. The power module comprises: a semiconductor chip; and a fluid-tight housing enclosing an interior of the housing and having an inlet for introducing a cooling medium into the interior and an outlet for discharging the cooling medium from the interior, wherein a first side of the housing is at least partially formed by a busbar board for electrically coupling the power module to one or more external devices, wherein a second side of the housing, opposite the first side of the housing, is at least partially formed by a driver board for driving the semiconductor chip, wherein the busbar board is mechanically coupled to the driver board by a frame of the housing, wherein the semiconductor chip is arranged on the driver board within the interior of the housing, such that the semiconductor chip can be cooled by the cooling medium.and wherein the semiconductor chip is electrically coupled to the driver board and the busbar board. The power module may be an electrical converter, e.g., an inverter or a rectifier, and / or may form or comprise one or more half-bridges.

[0008] The fact that the semiconductor chip can be cooled by the liquid cooling medium can contribute to very good heat dissipation from the semiconductor chip. This can contribute to good reliability and / or high performance of the power module. The use of the busbar board and driver board of the package saves space and costs and allows the power module to be implemented with only a few components, thus reducing complexity and extending the service life of the power module.

[0009] The fact that the semiconductor chip can be cooled by the cooling medium can mean that the cooling medium can flow around the semiconductor chip and touch the semiconductor chip when the cooling medium flows through the interior of the housing, particularly during operation of the power module. This can contribute to very good heat dissipation from the semiconductor chips. This can contribute to high performance of the semiconductor chip and thus of the power module. Since the cooling medium contacts the semiconductor chip and one or more of the electrical couplings, the cooling medium can have dielectric and / or electrically insulating properties to prevent short circuits from occurring within the interior. For example, the cooling medium can be a dielectric oil.

[0010] The semiconductor chip can be arranged directly on the driver board. In particular, the semiconductor chip can be arranged on the driver board such that the semiconductor chip touches the driver board. The semiconductor chip can comprise SiC, GaN, or GaO. The power module can comprise two or more corresponding semiconductor chips. One or more of the semiconductor chips can comprise two or more electrical contacts per semiconductor chip. For example, one or more of the semiconductor chips can comprise one or more gate contacts, one or more source contacts, one or more drain contacts, and / or one or more substrate contacts, wherein one or more of these contacts can be arranged facing away from the driver board.

[0011] The busbar board may comprise a dielectric and fluid-tight first body, e.g., comprising one or more layers of pre-impregnated fibers and a plurality of electrically conductive busbars. The busbars may be arranged on a surface or may be embedded in this dielectric and fluid-tight first body. For example, the busbar board may be a printed circuit board (PCB).

[0012] According to one embodiment, the busbar board comprises a first power terminal for electrically coupling the power module to an external first device, wherein the first power terminal is arranged to be accessible from outside the power module; a second power terminal for electrically coupling the power module to an external second device, wherein the second power terminal is arranged to be accessible from outside the power module; a first power pattern facing the interior, electrically coupled to the semiconductor chip, and electrically coupled to the first power terminal via a first busbar of the busbar board; and a second power pattern facing the interior, electrically coupled to the driver board, and electrically coupled to the second power terminal via a second busbar of the busbar board.

[0013] The first external device may be a DC device, such as a DC capacitor, an intermediate circuit, or a battery. The second external device may be a load, such as an electrical machine, e.g., a rotating electrical machine, e.g., a generator or an electric motor. The fact that the first and / or second power terminal is / are accessible from outside the power module may mean that the first and / or second power terminal may protrude at least partially from the housing or that the first and / or second power terminal is / are arranged in corresponding recesses of the housing that are exposed to the outside.

[0014] The power patterns each comprise an electrically conductive region, e.g., a sheet, a pad, or a layer comprising, for example, copper or aluminum. The power patterns can be arranged on a surface or can be embedded in the dielectric and fluid-tight first body of the busbar board.

[0015] According to one embodiment, the driver board comprises one or more electronic components for controlling the semiconductor chip, wherein the electronic components are arranged on an exterior side of the housing; a control pattern facing the interior, electrically coupled to the semiconductor chip, and electrically coupled to at least one of the electronic components via an electrical line of the driver board; and a third power pattern facing the interior, electrically coupled to the semiconductor chip, and electrically coupled to the busbar board. Thus, the electronic components can be arranged on an exterior side of the housing, while the semiconductor chips can be arranged inside the housing.

[0016] The driver board may comprise a dielectric and fluid-tight second body, which comprises, for example, one or more layers of pre-impregnated fibers and a plurality of the electrical lines. The driver board may be a PCB. The electronic components may be configured to drive the semiconductor chips. The electronic components may comprise active electronic components and / or passive electronic components. The passive electronic components may comprise one or more resistors, one or more capacitors, and / or one or more conductors. The active electronic components may comprise one or more chips and / or one or more transistors, wherein these chips may be arranged on the outside of the housing for controlling the above semiconductor chips. The control pattern and the third power pattern each comprise an electrically conductive region, for example, a sheet, a pad, or a layer, which may, for example,Copper or aluminum. The control pattern and the third power pattern may be arranged on a surface or may be embedded in the dielectric and fluid-tight second body of the driver board.

[0017] According to one embodiment, the second power pattern of the busbar board is electrically coupled to the third power pattern of the driver board. Thus, no semiconductor chip or electronic component can be arranged between the second power pattern and the third power pattern.

[0018] According to one embodiment, the electrical coupling between the semiconductor chip and the driver board and / or the electrical coupling between the semiconductor chip and the busbar board and / or the electrical coupling between the busbar board and the driver board, e.g., the second power pattern and the third power pattern, is provided by respective electrically conductive pins, and the pins are arranged such that the pins can be cooled by the cooling medium. The fact that the pins can be cooled by the cooling medium can mean that the cooling medium can flow around the pins and touch the pins as the cooling medium flows through the interior of the package. This can contribute to very good heat dissipation from the semiconductor chip, the driver board, and the busbar board.

[0019] Instead of electrically coupling the semiconductor chip to the patterns of the driver board or the busbar board via the pins, at least the electrical connection to the patterns of the driver board or the busbar board may be a direct electrical connection. In this context, the direct electrical connection may be provided by the electrical contacts of the semiconductor chip directly touching the corresponding patterns, or by providing an adhesive only between the semiconductor chip and the corresponding patterns, where the adhesive may be a solder or an electrically conductive adhesive. In other words, the electrical connections between the semiconductor chip and the busbar board may be provided by the pins, and the electrical connections between the semiconductor chip and the driver board may be direct electrical connections, or vice versa.Thus, no wire bonds are required and only a small amount of inductance may be generated during operation of the power module.

[0020] If the semiconductor chip is coupled to the busbar board via the pins, an electrically conductive sheet can be arranged between the pins and the corresponding electrical contact of the semiconductor chip. The sheet can support the pins and / or can serve as a collector for collecting the current flowing through the pins.

[0021] According to one embodiment, a cross-section of the pins has a rounded or polygonal shape. For example, the rounded shape can be circular or oval, and / or the polygonal shape can be rectangular, diamond-shaped, or hexagonal. This can contribute to very good heat dissipation from the semiconductor chip, the driver board, and the busbar board.

[0022] According to one embodiment, the above semiconductor chip is a first semiconductor chip, and the power module comprises a second semiconductor chip arranged on the driver board in the interior of the housing. The second semiconductor chip is electrically coupled to the driver board and, via the driver board, to the busbar board. The first and second semiconductor chips can form a half-bridge of the power module. A type of the second semiconductor chip can correspond to a type of the first semiconductor chip.

[0023] According to one embodiment, the first power terminal comprises a first DC terminal and a second DC terminal, each arranged to be accessible from outside the power module, the first power pattern is a first DC pattern, the first bus bar is a first DC bus bar, the first DC terminal is electrically coupled to the first semiconductor chip via the first DC bus bar and the first DC pattern, the second DC terminal is electrically coupled to the driver board via a second DC bus bar of the bus bar board and a second DC pattern facing the interior, the second power terminal is an AC terminal, the second power pattern is a first AC pattern, and the second bus bar is an AC bus bar.In this embodiment, the first semiconductor chip may belong to a high side of the power module, while the second semiconductor chip may belong to a low side of the power module.

[0024] According to one embodiment, the first semiconductor chip has a first control contact facing the driver board, a first control contact of the first semiconductor chip facing the busbar board, and a second power contact of the first semiconductor chip facing the driver board. The second semiconductor chip has a second control contact facing the driver board, a first power contact of the second semiconductor chip facing the busbar board, and a second power contact of the second semiconductor chip facing the driver board. The control pattern of the driver board comprises a first control pattern electrically coupled to the first control contact and a second control pattern electrically coupled to the second control contact. The first power contact of the first semiconductor chip is electrically coupled to the first DC pattern.the second power contact of the first semiconductor chip is electrically coupled to the third power pattern of the driver board and, via the third power pattern, to the first AC pattern of the busbar board; the driver board comprises a fourth power pattern electrically coupled to the second power contact of the second semiconductor chip and to the second DC pattern of the busbar board; and the first power contact of the second semiconductor chip is electrically coupled to a second AC pattern of the busbar board, the second AC pattern being electrically coupled to the AC busbar.

[0025] According to one embodiment, at least one of the semiconductor chips is a high-performance semiconductor chip. The high-performance semiconductor chip can be configured to process high voltages, for example, more than 100 V, and / or high currents, for example, more than 10 A.

[0026] These and other aspects of the invention will become apparent and explained with reference to the embodiments described below. Embodiments of the present invention will be described in more detail below with reference to the attached drawings. Fig. 1 shows a sectional side view of an embodiment of a power module.

[0027] The reference symbols used in the drawings and their meanings are summarized in the following list of reference symbols. Identical parts in the figures are generally provided with the same reference symbols.

[0028] Fig. 1 shows a sectional side view of an embodiment of a power module 20. The power module 20 comprises the following: at least one semiconductor chip, e.g., a first semiconductor chip 32 and a second semiconductor chip 42, and a fluid-tight housing 22. The fluid-tight housing 22 encloses an interior space 30 of the housing 22, in which the semiconductor chips 32, 42 are arranged. The power module 20 may be an electrical converter, e.g., an inverter or a rectifier, and / or may form or comprise one or more half-bridges.

[0029] A first side of the housing 22 is at least partially, e.g., completely, formed by a bus bar board 24 for electrically coupling the power module 20 to one or more external devices (not shown). A second side of the housing 22, opposite the first side of the housing 22, is at least partially formed by a driver board 26 for driving the semiconductor chips 32, 42. The bus bar board 24 is mechanically coupled to the driver board 26 by a frame 28 of the housing 22. The second side of the housing 22 may be formed by the frame 28. Optionally, the housing 22 may not include any outward-facing components other than the bus bar board 24, the driver board 26, and the frame 28. Thus, the housing 22 may be formed by the bus bar board 24, the driver board 26, and the frame 28.

[0030] The fluid-tight housing 22 has an inlet 92 for introducing a cooling medium (not shown) into the interior space 30 and an outlet 94 for discharging the cooling medium from the interior space 30. The inlet 92 and the outlet 94 can be arranged on or at least partially in the frame 28. For example, the inlet 92 and the outlet 94 can extend through corresponding recesses in the frame 28. A seal 96, e.g., an O-ring, can be arranged between the busbar board 24 and the frame 28. Optionally, another seal (not shown), e.g., another O-ring, can be arranged between the driver board 26 and the frame 28. The busbar board 24 can be mechanically coupled to the frame 28 by one or more bolts or screws 98. Optionally, the driver board 26 can be mechanically coupled to the frame 28 by one or more additional bolts or screws (not shown).

[0031] The semiconductor chips 32, 43 are arranged on the driver board 26 in the interior space 30 of the housing 22, so that the semiconductor chips can be cooled by the cooling medium when the cooling medium circulates in the interior space 30. The semiconductor chips 32, 42 are electrically coupled to the driver board 26 and to the busbar board 24.

[0032] The fact that the semiconductor chips 32, 42 can be cooled by the cooling medium can mean that the cooling medium can flow around the semiconductor chips 32, 42 and can touch the semiconductor chips 32, 42 when the cooling medium flows through the interior 30 of the housing 22, particularly during operation of the power module 20. For this reason, the cooling medium can have dielectric and / or electrically insulating properties to prevent short circuits from occurring within the interior 30. For example, the cooling medium can be a dielectric oil.

[0033] The busbar board 24 may comprise a dielectric and fluid-tight first body, for example, comprising one or more layers of pre-impregnated fibers and a plurality of electrically conductive busbars 64, 66, 68. The busbars 64, 66, 68 may be disposed on a surface or may be embedded within this dielectric and fluid-tight first body. For example, the busbar board 24 may be a printed circuit board (PCB).

[0034] The busbar board 24 may include a first power terminal 52, 54 for electrically coupling the power module 20 to an external first device (not shown), wherein the first power terminal 52, 54 may be arranged such that it is accessible from outside the power module 20. The busbar board 24 may include a second power terminal 50 for electrically coupling the power module 20 to an external second device (not shown), wherein the second power terminal 50 may be arranged such that it is accessible from outside the power module 20. The busbar board 24 may include a first power pattern 60 facing the interior 30, electrically coupled to the first semiconductor chip 32, and electrically coupled to the first power terminal 52 via a first busbar 66 of the busbar board 24.The busbar board 24 may include a second power pattern 56 facing the interior space 30, electrically coupled to the driver board 26, and electrically coupled to the second power terminal 50 via a second busbar 64 of the busbar board 24.

[0035] The first external device may be a DC device, such as a capacitor, an intermediate circuit, or a battery. The second external device may be a load, such as an electrical machine, e.g., a rotating electrical machine, e.g., a generator or an electric motor. The fact that the first and / or second power terminal 52, 54, 50 is / are accessible from outside the power module 20 may mean that the first and / or second power terminal 52, 54, 50 may protrude at least partially from the housing 22 or that the first and / or second power terminal 52, 54, 50 may be arranged in corresponding recesses of the housing 22, which may be at least partially exposed to the outside.

[0036] The power patterns 56, 60 may comprise small electrically conductive areas, e.g., sheets, pads, or layers comprising, for example, copper or aluminum. The power patterns 56, 60 may be arranged on a surface or may be embedded in the dielectric and fluid-tight first body of the busbar board 24.

[0037] The driver board 26 may include one or more electronic components 80 for controlling the semiconductor chips 32, 42. The electronic components 80 may be arranged on an exterior side of the housing 22. The driver board 26 may include one or more control patterns 84, 86 that face the interior 30, are electrically coupled to the semiconductor chips 32, 34, and are electrically coupled to at least one of the electronic components 80 via one or more electrical lines 82 of the driver board 26. The driver board 26 may include a third power pattern 88 that faces the interior 30, is electrically coupled to the semiconductor chip 32, and is electrically coupled to the busbar board 24.

[0038] The driver board 26 may include a dielectric and fluid-tight second body, e.g., including one or more layers of pre-impregnated fibers and a plurality of the electrical lines 82. The driver board 26 may be a PCB. The electronic components 80 may be configured to drive the semiconductor chips 32, 42. The electronic components 80 may include active electronic components and / or passive electronic components. The passive electronic components may include one or more resistors, one or more capacitors, and / or one or more conductors. The active electronic components may include one or more chips and / or one or more transistors. The control patterns 84, 86 and the third power pattern 88 may include small electrically conductive regions, e.g., sheets, pads, or layers, e.g., including copper or aluminum.The control patterns 84, 86 and the third power pattern 88 may be arranged on a surface or may be embedded in the dielectric and fluid-tight second body of the driver board 26.

[0039] The second power pattern 56 of the busbar board 24 can be electrically coupled to the third power pattern 88 of the driver board 26. Thus, no semiconductor chip or electronic component can be arranged between the second power pattern 56 and the third power pattern 88.

[0040] The electrical coupling between the semiconductor chips 32, 42 and the busbar board 24 and / or the electrical coupling between the busbar board 24 and the driver board 26, e.g., between the second power pattern 56 and the third power pattern 88, can be provided by corresponding electrically conductive pins 70. The pins 70 can be arranged such that the pins 70 can be cooled by the cooling medium when the cooling medium circulates in the interior space 30. The fact that the pins 70 can be cooled by the cooling medium can mean that the pins 70 can be formed and arranged such that the cooling medium can flow around the pins 70 and can touch the pins 70 when the cooling medium flows through the interior space 30 of the housing 22. A cross-section of the pins 70 can have a rounded or polygonal shape.For example, the rounded shape may be a circular or oval shape, and / or the polygonal shape may be a rectangular, diamond-shaped, or hexagonal shape.

[0041] When the semiconductor chips 32, 42 are coupled to the busbar board 24 via the pins 70, electrically conductive surfaces 72, 74 can be arranged between the pins 70 and the corresponding electrical contact of the semiconductor chips 32, 42. The surfaces 72, 74 can each support the corresponding pins 70 and / or can serve as a collector for collecting the current flowing through these pins 70.

[0042] The electrical couplings between the semiconductor chips 32, 42 and the patterns 84, 86, 88, 90 of the driver board 26 can be direct electrical connections. In this context, the direct electrical connections can be provided by the electrical contacts 36, 38, 46, 48 of the semiconductor chips 32, 42 that directly touch the corresponding patterns 84, 86, 88, 90, or by providing an adhesive only between the semiconductor chips 32, 42 and the corresponding patterns 84, 86, 88, 90, wherein the adhesive can be a solder or an electrically conductive adhesive. In other words, the electrical connections between the semiconductor chips 32, 42 and the busbar board 24 can be provided by the pins 70, and the electrical connections between the semiconductor chips 32, 42 and the driver board 24 can be direct electrical connections (as in Fig. 1), or vice versa.

[0043] Thus, the semiconductor chips 32, 42 can be arranged directly on the driver board 26. In particular, the semiconductor chips 32, 42 can be arranged on the driver board 26 such that the semiconductor chips 32, 42 can touch the driver board 26, or such that an adhesive, e.g., a solder or an electrically conductive adhesive, can be arranged only between the semiconductor chips 32, 42 and the driver board 26.

[0044] The first and second semiconductor chips 32, 42 may form a half-bridge of the power module 20. A type of the second semiconductor chip 42 may correspond to a type of the first semiconductor chip 32. The semiconductor chips 32, 42 may comprise SiC, GaN, or GaO. At least one of the semiconductor chips 32, 42 may be a high-performance semiconductor chip. The high-performance semiconductor chip may be configured to process high voltages, for example, more than 100 V, and / or high currents, for example, more than 10 A.

[0045] One or more of the semiconductor chips 32, 42 may include two or more electrical contacts. For example, the first semiconductor chip 32 may include a first control contact 38, e.g., a first gate contact, a first power contact 34 of the first semiconductor chip 32, e.g., a drain contact of the first semiconductor chip 32, a second power contact 36 of the first semiconductor chip 32, e.g., a source contact of the first semiconductor chip 32, and / or one or more substrate contacts (not shown). Analogously, the second semiconductor chip 42 may include a second control contact 48, e.g., a second gate contact, a first power contact 44 of the second semiconductor chip 42, e.g., a drain contact of the second semiconductor chip 42, a second power contact 46 of the second semiconductor chip 42, e.g., a source contact of the second semiconductor chip 42, and / or one or more substrate contacts (not shown).The first control contact 38 can face the driver board 24. The first power contact 34 of the first semiconductor chip 32 can face the busbar board 24. The second power contact 36 of the first semiconductor chip 32 can face the driver board 26. The second control contact 48 can face the driver board 26. The first power contact 44 of the second semiconductor chip 42 can face the busbar board 24. The second power contact 46 of the second semiconductor chip 42 can face the driver board 26. The first power contact 34 of the first semiconductor chip 32 can be coupled to the corresponding pins 70 via an electrically conductive first sheet 72. The first power contact 44 of the second semiconductor chip 42 can be coupled to the corresponding pins 70 via an electrically conductive second surface structure 74.

[0046] At the Fig.In the embodiment shown in Figure 1, the first power terminal 52, 54 comprises a first DC terminal 52 and a second DC terminal 54, which are arranged to be accessible from outside the power module 20. The first power pattern 52 is a first DC pattern 52, and the first bus bar 66 is a first DC bus bar 66. The first DC terminal 52 is electrically coupled to the first semiconductor chip 32 via the first DC bus bar 66 and the first DC pattern 60. The second DC terminal 54 is electrically coupled to the driver board 26 via a second DC bus bar 68 of the bus bar board 24 and a second DC pattern 62 facing the interior 30. The second power terminal 50 is an AC terminal 50, the second power pattern 56 is a first AC pattern 56, and the second busbar 68 is an AC busbar 64.In this embodiment, the first semiconductor chip 32 may belong to a high side of the power module 20, while the second semiconductor chip 42 may belong to a low side of the power module 20.

[0047] The control pattern 84, 86 of the driver board 26 may include a first control pattern 84 electrically coupled to the first control contact 38 and a second control pattern 86 electrically coupled to the second control contact 48. The first power contact 34 of the first semiconductor chip 32 may be electrically coupled to the first DC pattern 60. The second power contact 36 of the first semiconductor chip 32 may be electrically coupled to the third power pattern 88 of the driver board 26 and, via the third power pattern 88, to the first AC pattern 56 of the busbar board 24. The driver board 26 may include a fourth power pattern 90 electrically coupled to the second power contact 46 of the second semiconductor chip 42 and to the second DC pattern 62 of the busbar board 24. The first power contact 44 of the second semiconductor chip 42 may be electrically coupled to a second AC pattern 58 of the busbar board 24.The second AC pattern 58 may be electrically coupled to the AC busbar 64.

[0048] Although the invention has been illustrated and described in detail in the drawings and in the foregoing description, such illustration and description are to be considered as illustrative or exemplary and not restrictive. In particular, the invention is not limited to the above embodiments. For example, the power module 20 may include more or fewer semiconductor chips 32, 42. Furthermore, the semiconductor chips 32, 42 may each include more or fewer electrical contacts. Instead of directly coupling the semiconductor chips 32, 42 to the driver board 24 and via the pins 70 to the busbar board 24, the semiconductor chips 32, 42 may also be directly coupled to the driver board 24 and to the busbar board 24 via the pins 70.Other variations of the disclosed embodiments may be further appreciated and practiced by those skilled in the art in practicing the claimed invention upon careful consideration of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the indefinite article "a" does not exclude a plural. A single processor, controller, or other unit may perform the functions of multiple elements recited in the claims. The mere fact that certain measures are recited in different dependent claims does not mean that a combination of those measures cannot be used to advantage. Any reference signs in the claims should not be construed as limiting the scope of protection. List of reference symbols 20 power module 22 housings 24 Busbar board 26 Driver board 28 frames 30 Interior 32 first semiconductor chips 34 first power contact of first semiconductor chip 36 second power contact of first semiconductor chip 38 first control contact 42 second semiconductor chip 44 first power contact of second semiconductor chip 46 second power contact of second semiconductor chip 48 second control contact 50 AC connection 52 first DC connection 54 second DC connection 56 first AC pattern 58 second AC pattern 60 first DC pattern 62 second DC pattern 64 AC busbar 66 first DC busbar 68 second DC busbar 70 pen 72 first surface structure 74 second surface structure 80 electronic components 82 electrical lines 84 first tax pattern 86 second tax pattern 88 third performance pattern 90 fourth performance pattern 92 Inlet 94 Outlet 96 Seal 98 screw

Claims

[1] Power module (20), comprising: a semiconductor chip (32, 42); and a fluid-tight housing (22) enclosing an interior space (30) of the housing (22) and having an inlet (92) for introducing a cooling medium into the interior space (30) and an outlet (94) for discharging the cooling medium from the interior space (30), wherein a first side of the housing (22) is at least partially formed by a busbar board (24) for electrically coupling the power module (20) to one or more external devices, a second side of the housing (22) opposite the first side of the housing (22) is at least partially formed by a driver board (26) for driving the semiconductor chip (32, 42), the busbar board (24) is mechanically coupled to the driver board (26) by a frame (28) of the housing (22), the semiconductor chip (32, 42) is arranged within the interior (30) of the housing (22) on the driver board (26) so that the semiconductor chip (32, 42) can be cooled by the cooling medium, and the semiconductor chip (32, 42) is electrically coupled to the driver board (26) and the busbar board (24). [2] The power module (20) of claim 1, wherein the busbar board (24) comprises: a first power terminal (52, 54) for electrically coupling the power module (20) to an external first device, the first power terminal (52, 54) being arranged to be accessible from outside the power module (20); a second power terminal (50) for electrically coupling the power module (20) to an external second device, the second power terminal (50) being arranged to be accessible from outside the power module (20); a first power pattern (60) facing the interior (30), electrically coupled to the semiconductor chip (32, 42) and electrically coupled to the first power terminal (52, 54) via a first busbar (66) of the busbar board (24); and a second power pattern (56) facing the interior (30), electrically coupled to the driver board (26) and electrically coupled to the second power terminal (50) via a second busbar (64) of the busbar board (24). [3] Power module (20) according to one of the preceding claims, wherein the driver board (26) comprises: one or more electronic components (80) for controlling the semiconductor chip (32, 42), wherein the electronic components (80) are arranged on an outer side of the housing (22); a control pattern (84, 86) facing the interior (30), electrically coupled to the semiconductor chip (32, 42) and electrically coupled to at least one of the electronic components (80) via an electrical line (82) of the driver board (26); and a third power pattern (88) facing the interior (30), electrically coupled to the semiconductor chip (32, 42) and electrically coupled to the busbar board (24). [4] Power module (20) according to claims 2 and 3, wherein the second power pattern (56) of the busbar board (24) is electrically coupled to the third power pattern (88) of the driver board (26). [5] Power module (20) according to one of the preceding claims, wherein the electrical coupling between the semiconductor chip (32, 42) and the driver board (26) and / or the electrical coupling between the semiconductor chip (32, 42) and the busbar board (24) and / or the electrical coupling between the busbar board (24) and the driver board (26) is provided by corresponding electrically conductive pins (70), and the pins (70) are arranged so that the pins (70) can be cooled by the cooling medium. [6] Power module (20) according to one of the preceding claims, wherein a cross section of the pins (70) has a rounded or polygonal shape. [7] Power module (20) according to one of the preceding claims, wherein the semiconductor chip (32, 42) is a first semiconductor chip (32) and wherein the power module (20) comprises a second semiconductor chip (42) arranged on the driver board (26) in the interior (30) of the housing (22), wherein the second semiconductor chip (42) is electrically coupled to the driver board (26) and via the driver board (26) to the busbar board (24). [8] Power module (20) according to one of the preceding claims, wherein the first power terminal (52, 54) comprises a first DC terminal (52) and a second DC terminal (54), each arranged to be accessible from outside the power module (20), the first power pattern (60) is a first DC pattern (60), the first busbar (66) is a first DC busbar (66), the first DC terminal (52) is electrically coupled to the first semiconductor chip (32) via the first DC busbar (66) and the first DC pattern (60), the second DC connection (54) is electrically coupled to the driver board (26) via a second DC busbar (68) of the busbar board (24) and a second DC pattern (62) facing the interior (30), the second power connection (50) is an AC connection (50), the second power pattern (56) is a first AC pattern (56), and / or the second busbar (64) is an AC busbar (64). [9] Power module (20) according to claims 7 and 8, wherein the first semiconductor chip (32) has a first control contact (38) facing the driver board (26), a first control contact (34) of the first semiconductor chip (32) facing the busbar board (24), and a second power contact (36) of the first semiconductor chip (32) facing the driver board (26), the second semiconductor chip (42) has a second control contact (48) facing the driver board (26), a first power contact (44) of the second semiconductor chip (42) facing the busbar board (24), and a second power contact (46) of the second semiconductor chip (42) facing the driver board (26), the control pattern (84, 86) of the driver board (26) comprises a first control pattern (84) electrically coupled to the first control contact (38) and a second control pattern (86) electrically coupled to the second control contact (48), the first power contact (34) of the first semiconductor chip (32) is electrically coupled to the first DC pattern (60), the second power contact (36) of the first semiconductor chip (32) is electrically coupled to the third power pattern (88) of the driver board (26) and via the third power pattern (88) to the first AC pattern (56) of the busbar board (24), the driver board (26) comprises a fourth power pattern (90) electrically coupled to the second power contact (46) of the second semiconductor chip (42) and to the second DC pattern (62) of the busbar board (24), and the first power contact (44) of the second semiconductor chip (42) is electrically coupled to a second AC pattern (58) of the busbar board (24), wherein the second AC pattern (58) is electrically coupled to the AC busbar (64). [10] Power module (20) according to one of the preceding claims, wherein at least one of the semiconductor chips (32, 42) is a high-performance semiconductor chip.

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