Convection cooling device, cooling chamber and process arrangement

Abstract

A convection cooling device (100) comprises: a cooling region (150); a plurality of fins (102) arranged one behind the other along a row, each fin (102) having a first cavity (102h) and one or more gas outlets (102a) adjacent to the cooling region (150) and opening into the first cavity (102h); a plurality of second cavities adjacent to the cooling region (150), the plurality of fins (102) being spatially separated from one another such that one of the plurality of second cavities (104h) is formed between two immediately adjacent fins (102); a gas supply line (202) which is coupled to the cooling region (150) by means of the first cavity (102h) of each fin (102) in order to supply gas to the cooling region (150) by means of each fin (102); a gas discharge line (204) by means of which a plurality of second cavities are coupled to the cooling region (150) in order to extract gas from the cooling region (150).

Description

Various embodiments relate to a convection cooling device, a cooling chamber and a process arrangement.Generally, a substrate, for example a glass substrate, a metal substrate and / or a polymer substrate, may be treated (processed), e.g. coated, such that the chemical and / or physical properties of the substrate may be altered. Various coating processes can be carried out for coating a substrate. For example, a vacuum coating plant may be used to deposit one or more layers on one or more substrates by means of chemical and / or physical vapor deposition. In order to realize efficient deposition onto a plurality of substrates, a so-called inline installation can be used, in which a substrate is transported through the entire installation, for example by means of rollers, wherein a coating process can be carried out in one or more regions (also referred to as coating regions) of the inline installation during the transport of the substrate through the inline installation.One field of application of such vacuum-carried out coating processes is the coating of thermally sensitive 3D substrates with thick metallic layers by means of magnetron sputtering. The result of this is suitable for various applications. For example, the deposition of comparatively thick metallic layers on 3D substrates is a possibility for producing radar antennas for automotive applications.According to various embodiments, it has been recognized that the coating of thermally sensitive substrates is subject to a dilemma which gains significance as the ratio of the volume of the coating to be deposited on the substrate (which is a function of the layer thickness) and the volume of the substrate (more generally its heat capacity) increases. In particular, the thermal stress on the substrate increases with increasing layer thickness. Thermal energy is introduced into the substrate along with the coating process, so that its temperature increases ever further during the coating. In this regard, it has been recognized that the increase in the temperature of the substrate during coating increases with the layer thickness in a first approximation, and only in a second approximation at the rate of the coating process with which the substrate is coated. Thus, although this increase in the temperature of the substrate during coating can be inhibited by means of a reduction in the rate, it is only subordinate. In addition, the coating should take place as efficiently as possible, for example by coating as many substrates as possible per time. An established possibility for this is to increase the rate of the coating process with which the substrate is coated, so that more material is deposited on the substrate per time. However, thermal energy is introduced into the substrate along with the coating process, so that the substrate is heated further and further during the coating.For example, magnetron sputtering (or analogously evaporation by means of an electron beam and / or by means of thermoelectric heaters) is often carried out in the abovementioned field of application for coating the substrate, with the result that (for physical reasons) a comparatively large amount of thermal energy (also referred to as heat) is supplied to the substrate (also referred to as heat input) per area and per layer thickness. This heat input is based on condensation heat, kinetic energy of the sputtered particles, bombardment of the substrate with electrons and ions, recombination heat of ionized particles and further components of the coating plasma, such as electromagnetic radiation and / or photon bombardment. The greater the specification for the layer thickness to be deposited, the greater the heat input into the substrate. This heat input leads to a comparatively large increase in the temperature of the substrate during coating in the case of an invariant heat capacity of the substrate.On the other hand, the quality of the result of the coating process should be as high as possible, for which a strong heating of the substrate is disadvantageous, since this promotes damage to the substrate. It is precisely in vacuum that it is possible to draw thermal energy from the substrate, but it is limited (for example to pure thermal radiation). As a result, the rate of the coating process and in particular the thickness of the depositable layers with which the substrate can be coated is limited upward as a function of the thermal sensitivity of the substrate, which is an obstacle to the most efficient possible deposition of thick layers in particular.Therefore, it has conventionally been necessary to balance between quality and efficiency (and hence cost) of the coating.In view of this dielectric, according to various embodiments, a convection cooling device, a cooling chamber and a process arrangement are provided that facilitate extracting thermal energy from the substrate (also referred to as cooling the substrate). It has been clearly recognized that the established restriction of the cooling of substrates in a vacuum to thermal radiation can be overcome, such that convection can also be used for the cooling of substrates. Illustratively, the rate at which thermal energy can be extracted from the substrate can be greatly increased by means of convection, in particular with increasing mass flow of convection which passes through the substrate.More illustratively, the convection cooling device, cooling chamber, and process arrangement provide a structure and aspects thereof that facilitate cooling of substrates, for example, despite high demands on the purity of the vacuum in which the substrate is coated and / or despite a high tact (which reduces tact time and thus increases productivity) with which the substrates are coated.Illustratively, the structure makes it possible to increase the mass flow of gas (also referred to as cooling gas) passing through the substrate and in the process to spatially limit the propagation of the cooling gas, such that disturbance of vacuum conditions adjacent thereto is inhibited.According to various embodiments, the development of a highly productive and cost-effective coating procedure and an associated system concept for depositing thick metallic layers on 3D plastic or 3D plastic / compound substrates by means of magnetron sputtering is facilitated. According to various embodiments, the length of the process arrangement can be shortened by a multiple of 10 meters depending on the coating system. The process arrangement thus achieves a more acceptable scope in terms of price and geometry. This applies analogously to any type of temperature-sensitive substrate or layer system, for example likewise plate-shaped, strip-shaped and / or having a different geometry, for example made of glass, metal and / or plastic.They show FIGS. 1A and 1B each show a convection cooling device according to various embodiments in a schematic side view or cross-sectional view; FIG. 2A shows the operation of the convection cooling device according to various embodiments in a schematic flow diagram; FIG. 2B shows a pair of convection cooling devices according to various embodiments in a schematic side view or cross-sectional view; FIG. 3 shows the operation of the pair of convection cooling devices according to various embodiments in a schematic perspective view; FIGS. 4A and 4B each show a cooling chamber according to various embodiments in a schematic side view or cross-sectional view; FIGS. 5A and 5B each show a cooling chamber according to various embodiments in a schematic side view or cross-sectional view; FIG. 6 shows the temperature of a substrate over time in a schematic diagram; FIGS. 7, 8 and 9 each show a process arrangement in a schematic structural diagram and detailed views thereof according to various embodiments; FIG. 10 shows a convection cooling device according to various embodiments in a schematic side view or cross-sectional view; and FIGS. 11 and 12 each show a process arrangement according to various embodiments in a schematic side view or cross-sectional view.In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the invention may be practiced. In this regard, directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. is used with reference to the orientation of the figure(s) described. Since components of embodiments may be positioned in a number of different orientations, the direction terminology is for the purpose of illustration and is in no way limiting. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various exemplary embodiments described herein may be combined with each other, unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.In the context of this description, the terms "connected", "connected" and "coupled" are used to describe both a direct and an indirect connection (e.g. ohmic and / or electrically conductive, e.g. an electrically conductive connection), a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate.According to various embodiments, the term "coupled" or "coupling" may be understood in the sense of a (e.g. mechanical, hydrostatic, thermal and / or electrical), e.g. direct or indirect, connection and / or interaction. A plurality of elements can be coupled to one another, for example, along an interaction chain along which the interaction can be exchanged, for example a fluid (then also referred to as a fluid-conductingly coupled). For example, two elements coupled to one another can exchange an action with one another (also referred to as interaction), for example a mechanical, hydrostatic, thermal and / or electrical action. Coupling a plurality of vacuum components (e.g., valves, pumps, chambers, etc.) to one another may include being fluidly coupled to one another. According to various embodiments, "coupled" can be understood in the sense of a mechanical (e.g. physical or physical) coupling, e.g. by means of a direct physical contact. A clutch may be configured to transmit a mechanical interaction (e.g., force, torque, etc.).The actual state of an entity (e.g. a device, a system or an operation or process) can be understood to mean the actually present or sensorially detectable state of the entity. The desired state of the entity can be understood to mean the desired state, i.e. a specification. Controlling can be understood to mean an intended influencing of the current state (also referred to as actual state) of the entity. In this case, the current state can be changed in accordance with the specification (also referred to as the desired state), for example by changing one or more than one operating parameter (then also referred to as the manipulated variable) of the entity, for example by means of an actuator. Regulation can be understood as control, wherein a change of state due to disturbances is additionally counteracted. For this purpose, the actual state is compared with the desired state and the entity is influenced in such a way, for example by means of an actuator, that the deviation of the actual state from the desired state is minimized. In contrast to the pure forward-directed sequence control, the control therefore implements a continuous influence of the output variable on the input variable which is effected by the so-called control loop (also referred to as feedback). In other words, it can be understood here that, alternatively or in addition to the control (or the actuation), a regulation can be used or, alternatively or in addition to the control, a regulation can take place.The state of a controllable device (e.g. a transport device) or of a controllable process (e.g. the supply of gas) can be specified as a point (also referred to as operating point or operating point) in a space (also referred to as state space) which is spanned by the variable parameters of the device or of the process (also referred to as operating parameters). The state of the device or of the operation is thus a function of the respective value of one or more than one operating parameter which thus represents the state of the device or of the operation. The actual state can be determined based on a measurement (e.g. by means of a measuring element) of one or more than one operating parameters (then also referred to as controlled variable).According to various embodiments, a vacuum chamber may be provided by means of a chamber housing in which one or more vacuum chambers may be provided. The chamber housing can be coupled, for example, to a pump arrangement, e.g. a vacuum pump arrangement (e.g. gas-conducting) for providing a reduced pressure or a vacuum (vacuum chamber housing) and can be configured so stably that it resists the action of the air pressure in the pumped-off state. The pump arrangement (comprising at least one vacuum pump, e.g. a high vacuum pump, e.g. a turbomolecular pump) can make it possible to pump off a part of the gas from the interior of the vacuum chamber, e.g. from the coating region and / or cooling region.In this regard, it can be understood that one or more than one of the functional units explained herein (e.g. a lock) is represented by means of a vacuum chamber (e.g. lock chamber) which provides the function of the functional unit. In this regard, it can be understood that, at least in some embodiments, the functional unit can optionally be provided by means of a group of a plurality of vacuum chambers arranged one behind the other. For example, in at least some embodiments, a lock chamber explained herein can be understood as representing a lock as a functional unit, which in some embodiments has a plurality of lock chambers arranged one behind the other, which implement the functional unit. The plurality of lock chambers can exchange substrates with one another at a pressure which is between the pressure present at the entry side at the lock and the pressure present at the exit side at the lock. For example, a lock can have a fore-vacuum lock chamber and, adjacent to the latter, a high-vacuum lock chamber.According to various embodiments, a chamber housing, e.g. a vacuum chamber provided therein, may be configured such that a negative pressure (i.e. a pressure of less than atmospheric pressure) may be provided therein, e.g. a vacuum (i.e. a pressure of less than 0.3 bar), e.g. a pressure in a range of about 10 mbar to about 1 mbar (in other words coarse vacuum) or less, e.g. a pressure in a range of about 1 mbar to about 10 -3 mbar (in other words fine vacuum) or less, e.g. a pressure in a range of about 10 -3 mbar to about 10 -7 mbar (in other words high vacuum) or less, may be provided therein, For example, a pressure of less than high vacuum, e.g., less than about 10 -7 mbar. The atmospheric pressure (e.g. 1 bar) can be the pressure acting from the outside on the chamber housing.Reference is made herein to various vacuum chambers which are configured by means of a functional device according to a predefined function, wherein the functional device is configured to exert an effect according to the function on the interior of the vacuum chamber (also referred to as chamber interior or chamber interior). Examples of the functional device include: a coating device, a transport interface, a cooling device, a heating device, etc. For example, the vacuum chamber may be configured as a coating chamber by means of one or more than one coating device configured to emit a coating material into the interior of the vacuum chamber. For example, a vacuum chamber can be configured as a cooling chamber by means of a cooling device which is configured to draw thermal energy from the interior of the vacuum chamber (or at least a region thereof).A cooling device may be configured to draw thermal energy from a region (also referred to as a cooling region) by means of convection (also referred to as a convection cooling device). Convection can be understood as heat transfer by means of the transport of mass (e.g. a fluid, e.g. gas), i.e. a mass flow which carries along the thermal energy. For example, the convection can be provided by means of a cooling gas which is emitted by the cooling device and optionally resumed. For example, the convection can be provided in a cooling region, such that thermal energy is extracted from the cooling region or at least one body (e.g. substrate) arranged therein or adjoining the latter. In some embodiments, the cooling gas may circulate along a closed path that passes through the cooling region (also referred to as a circuit). Alternatively or additionally, the cooling gas supplied to the cooling region can originate from a finite reservoir (also referred to as a gas reservoir or cooling gas source), e.g. a gas tank. In some embodiments, the cooling gas may be cooled before being supplied to the cooling region, e.g. by being passed through a heat exchanger configured to draw thermal energy from the cooling gas.A convection source can be understood to mean a device which is configured to excite the convection, for example by being configured to excite a flow of the cooling gas through the cooling region, for example by means of a pressure difference. Exemplary components of the convection source include: a pressure accumulator; a pump (e.g., a vacuum pump); a fan. The pressure accumulator can have the cooling gas under overpressure. For example, the gas reservoir can provide the pressure accumulator in which the cooling gas is provided under overpressure.A vacuum chamber configured as a cooling chamber can optionally have two substrate transfer valves (also referred to simply as chamber valves), between which the cooling chamber and / or the cooling device are arranged. The two substrate transfer valves inhibit gas exchange between the cooling space and a vacuum chamber adjacent to the cooling chamber, thus increasing the margin for gas pressure in the cooling region. For example, the rate at which thermal energy is extracted from the cooling region or a substrate therein may increase with increasing gas pressure in the cooling region.According to various embodiments, the term "lamella" (also referred to as rib or fin) can be understood as a structural surface element which has, for example, a thin and / or flat shape. The lamella can be plate-shaped (e.g. having a rectangular or trapezoidal cross section), e.g. cuboidal and / or undulating. A plurality of slats arranged one behind the other are also referred to as compartments. According to various embodiments, the lamella can be provided as a hollow body, i.e. as a body which has one or more than one cavity, for example by being penetrated by one (e.g. gap-shaped) or more than one (e.g. round) through-opening. According to various embodiments, the slat may be monolithic or multi-part. According to various embodiments, the lamella provided as a hollow body may have a plurality of wall elements (e.g. metal sheets) which delimit the cavity.Reference is made herein to a transport path and the transport surface running along the transport path, which are provided by means of a plurality of rollers (also referred to as transport rollers) which adjoin the transport surface. The transport surface can run, for example, along the transport path and / or the transport direction. In some embodiments, the plurality of transport rollers provide a transport device, e.g., in the context of a vacuum chamber. In this regard, it can be understood that a plurality of transport rollers arranged one behind the other (e.g. across a plurality of vacuum chambers) can be coupled to one another in such a way that these kinetic energy (e.g. when these are coupled to one another) and / or material (e.g. substrates) can exchange one another, so that these form a transport composite (also referred to as transport device). In other words, each transport device can have a plurality of transport rollers which adjoin the transport surface.Optionally, the transport device can have one or more than one substrate carrier, which is transported by means of the transport rollers resting thereon. The substrate carrier may include one or more recesses (also referred to as a substrate receiving pocket), each recess configured to receive a substrate.The transporting (also referred to as a transport process) of one or more than one object (also referred to as a transport object), e.g. substrate (then also referred to as substrate transport) or substrate carrier, can be carried out according to one of various modes, of which a first mode is also referred to as individual transport and a second mode is also referred to as group transport.According to the group transport, one or more than one transport object (e.g. substrate or substrate carrier) is transported as part of a row of transport objects arranged one behind the other (also referred to as object train), for example substantially at the speed of the object train and / or at a temporally invariant distance from a directly adjacent transport object (e.g. substrate or substrate carrier) of the object train. For example, the speed at which the transport objects of the object train are transported (also referred to as transport speed) is linked to one another, e.g. electrically and / or mechanically. For example, a plurality of substrates which are arranged one behind the other in a row (also referred to as substrate train) are transported together, for example substantially at the same speed and / or at the same distance from one another. An exemplary implementation of group transport is effected by means of a plurality of transport rollers arranged one behind the other (also referred to as group transport device), of which each transport roller is driven in accordance with the same group transport specification (e.g. desired rotational speed or desired speed of the object train). For example, the transport rollers can be coupled to the same drive train, which links the rotational movement of the transport rollers to one another.According to the single transport, a transport object is transported individually, for example, to an object train or away from it. In the case of single transport, the speed of the transport object and / or the distance of the transport object from an immediately adjacent transport object can vary over time. For example, the individual transport can be configured to accelerate the transport object to the target speed of the object train and / or to decelerate it starting from the target speed of the object train.An exemplary implementation for transferring the single transport and the group transport into one another takes place by means of two drive trains, of which a first drive train drives the transport rollers of the group transport device and a second drive train drives the transport rollers of a transport device (also referred to as single transport device) adjoining the group transport device. The two drive trains can be controlled independently of one another. The single transport device and the group transport device can continue to one another, i.e. provide a common transport surface.For example, the individual transport device and the group transport device (e.g. in a vacuum chamber then configured as a transfer chamber) can adjoin one another (also referred to as a transport interface), so that these substrates can exchange one another. A transfer chamber can be understood here as a vacuum chamber in which an individual transport device and a group transport device adjoin one another, so that the individual transport and the group transport can be transferred into one another within the transfer chamber.In general, it can be understood that group transport allows particularly effective processing of substrates. However, group transport may be detrimental to the transfer of a substrate between areas of different pressure, particularly if transfer is to take place along a short distance and / or within a short time. In order to carry out the transfer of a substrate between regions of different pressure in a particularly efficient manner, this can be effected in a so-called lock chamber. Each lock chamber has two substrate transfer valves, so that their interior can be individually evacuated and / or aerated, which, however, interrupts the substrate transport. Therefore, an individual transport preferably takes place in the lock chamber.A substrate transfer valve is understood to mean a chamber valve (e.g. a flap valve or slide valve) which is configured to influence (e.g. to inhibit or release) the gas exchange through a chamber opening (also referred to as substrate transfer opening) through which the transport surface runs. The substrate transfer valve may be arranged, brought into a first state, blocking the transport surface (e.g. covering, e.g. sealing) the substrate transfer opening in the vacuum chamber and, brought into a second state, next to the transport surface.According to various embodiments, the substrate may include or be formed from at least one of the following: a ceramic, a glass, a semiconductor (e.g. amorphous, polycrystalline or single-crystal semiconductor such as silicon), a metal, and / or a polymer (e.g. plastic). According to various embodiments, the substrate may consist of a polymer or comprise polymer, for example if the substrate comprises or consists of a composite material (also referred to as compound) comprising the polymer. Alternatively or additionally, the substrate may have an uneven side (also referred to as a coating side) that is being coated (also referred to as a 3D substrate). For example, the coating side of the 3D substrate may be patterned and / or may include multiple interconnected trenches (also referred to as a 3D structure).According to various embodiments, the 3D substrate may be configured as a hollow body, as an antenna precursor. The antenna precursor can have, for example, a plurality of interconnected trenches which are lined with a metal (e.g. copper) by means of the coating process.According to various embodiments, processing (also referred to as treating) a substrate may include at least one of: cleaning the substrate, coating the substrate, irradiating (e.g., using light, UV light, particles, electrons, ions, etc.) the substrate, modifying the surface of the substrate, drying the substrate, heating the substrate, etching the substrate, and glowing the substrate.With regard to the layer-forming process (also referred to as coating process), reference is made here by way of example to so-called sputtering. The term "sputtering" refers to sputtering a material (also referred to as a coating material or target material) by means of a plasma. The atomized constituents of the coating material (e.g. individual atoms and / or ions) are separated from one another and can be deposited elsewhere, for example, to form a layer. The sputtering can be carried out by means of a so-called sputtering device, which can have one or more than one magnet system (then also referred to as magnetron). The coating material can be provided by means of a so-called sputtering target (also referred to as target for short), which can be tubular (then also referred to as tubular target) or plate-shaped (then also referred to as plate target or planar target), for example. In order to generate the plasma, a voltage (also referred to as sputtering voltage) can be applied to the sputtering target (also referred to as target for short), so that the sputtering target is operated as a cathode. Even if the sputtering voltage has an AC voltage, the terminology of the cathode is often maintained.For sputtering, the sputtering target can be arranged in a vacuum processing chamber (also referred to simply as a processing chamber, e.g. of the coating chamber type), so that the sputtering can take place in a vacuum. To this end, the ambient conditions (process parameters) within the vacuum processing chamber (e.g., process pressure, temperature, gas composition, etc.) may be adjusted or controlled during sputtering. For example, a working gas can be provided within the vacuum processing chamber, which working gas identifies the plasma-forming gas or the plasma-forming gas mixture. The vacuum processing chamber can be or can be configured, for example, to be airtight, dust-proof and / or vacuum-proof, so that a gas atmosphere having a predefined composition (also referred to as working atmosphere) or a predefined pressure (also referred to as working pressure or process pressure) can be provided within the vacuum processing chamber (e.g. according to a setpoint value). The vacuum chamber may be configured such that a vacuum (i.e. a pressure of less than 0.3 bar) and / or a pressure in a range of about 1 mbar to about 10 -3 mbar (in other words fine vacuum) or less may be provided therein, e.g. a pressure in a range of about 10 -3 mbar to about 10 -7 mbar (in other words high vacuum) or less may be provided, e.g. a pressure of less than high vacuum, e.g. less than about 10 -7 mbar (in other words ultra high vacuum) may be provided therein. The lowest pressure attainable in the vacuum chamber is also referred to as residual vacuum.It can be understood that what is described herein for sputtering can analogously apply to any other coating process, e.g. a physical vapor deposition. In general, physical vapor deposition (e.g. sputtering and / or evaporation) comprises transferring the chemical composition of the target or of the coating material into the layer to be formed.A sputtering apparatus may be configured to sputter the coating material by means of a plasma (also referred to as sputtering). A thermal evaporation device can be configured to evaporate the coating material by means of thermal energy, which can be generated, for example, by means of an electron beam and / or a thermoelectric heater. Depending on the nature of the coating material, alternatively or in addition to the thermal evaporation, i.e. a thermal conversion of a liquid state (liquid phase) into a gaseous state (gaseous phase), sublimation, i.e. a thermal conversion of a solid state (solid phase) into a gaseous state, can also occur. In other words, the evaporation can also comprise subliming the coating material. The same as that described herein for sputtering and / or evaporation may apply analogously to any other type of physical vapor deposition (PVD) and / or chemical vapor deposition (CVD).The term "inline" herein denotes a configuration (also referred to as inline configuration) in which a stream of substrates is transported through a vacuum along an elongated (e.g. straight) transport path, from which substrates supplied to the transport path are introduced into the vacuum and from which substrates removed from the transport path are discharged from the vacuum (e.g. simultaneously for introduction). Thus, a continuous stream of substrates is provided through the vacuum without breaking the vacuum. According to various embodiments, the processing (e.g. coating) of the substrate is performed according to the inline configuration, such that the substrates are transported along the transport path through one or more than one coating region (e.g. according to the group transport), in which the coating of the substrate is performed in vacuum. Analogously, the process arrangement (e.g. a plant) can be provided in inline configuration, so that it has two mutually opposite end-face lock chambers, of which one lock chamber carries substrates into the vacuum and (e.g. simultaneously thereto) the other lock chamber carries substrates out of the vacuum.The term "drive device" refers to a device that is configured to generate a movement, for example based on potential (e.g. electrical and / or hydrostatic) energy, and to output the movement (e.g. to transmit it to an object). The drive device can have, for example, an electromechanical converter (e.g. engine) or a hydrostatic-mechanical converter (e.g. a reciprocating piston).Various examples relating to aspects disclosed herein and that illustrated in the figures are described below. The examples generally help facilitate, e.g., speed up, cooling of the substrate and / or promote without spatially spreading the cooling gas (e.g., into a vacuum) so as to inhibit interference with adjacent vacuum conditions.Example 1 is a convection cooling device, comprising: a cooling region; a plurality of fins arranged one behind the other along a row, each fin having a first cavity and one or more than one gas outlet adjoining the cooling region, which outlet opens into the first cavity (also referred to as gas feed space), a plurality of second cavities adjoining the cooling region (also referred to as gas discharge spaces), wherein the plurality of fins are spatially separated from one another, such that one of the plurality of second cavities is formed between two fins directly adjoining one another; a gas feed line (illustratively a feed) which is coupled to the cooling region by means of the first cavity of each fin in order to feed a gas (also referred to as cooling gas) to the cooling region by means of the fin; a gas discharge line which is coupled to the cooling region by means of the plurality of second cavities in order to draw gas from the cooling region.Example 2 is the convection cooling device according to example 1, further comprising: a convection source which is configured to provide a convection from the gas feed line to the gas discharge line by means of the cooling gas (e.g. through the cooling region) and / or to generate at least one pressure difference between the gas feed line to the gas discharge line, e.g. of more than 1 mbar (e.g. than 10 mbar, e.g. than 100 mbar, e.g. than 1 bar, e.g. than 10 bar, e.g. than 100 bar). This further promotes disturbance-free convection.Example 3 is the convection cooling device according to example 1 or 2, wherein each fin comprises a pair of (preferably plate-shaped) wall elements, between which the first cavity of the fin is formed. This further promotes disturbance-free convection.Example 4 is the convection cooling device according to Example 1 or 3, wherein each wall member of the pair of wall members separates the first cavity from one of the second cavities. This further promotes disturbance-free convection.Example 5 is the convection cooling device of example 1 or 4, wherein each wall element of the pair of wall elements is adjacent to the first cavity of the fin and / or to one of the second cavities.Example 6 is the convection cooling device according to any one of Examples 1 to 5, wherein the plurality of fins includes at least 4 fins, e.g., at least 10 fins, e.g., at least 20 fins. This further promotes disturbance-free convection.Example 7 is the convection cooling device according to any one of Examples 1 to 6, wherein each fin of the plurality of fins is elongated toward the cooling region.Example 8 is the convection cooling device according to any one of Examples 1 to 7, wherein the gas outlet is directed to the cooling region.Example 9 is the convection cooling device of any one of Examples 1 to 8, wherein the first cavity of each fin is elongated toward the cooling region.Example 10 is the convection cooling device according to any one of Examples 1 to 9, wherein each fin is penetrated (e.g. along a direction towards the cooling region) by an opening (also referred to as a through opening, e.g. forming a passage) providing the first cavity and the gas outlet.Example 11 is the convection cooling device according to any one of Examples 1 to 10, further comprising: a hood, in the interior of which the plurality of fins and / or the cooling space are arranged.Example 12 is the convection cooling device of any of Examples 1 to 11, wherein the plurality of fins (and e.g. wall elements thereof) are arranged one behind the other along a direction in the row, wherein an extension of the first cavity along the direction deviates less than 50% (e.g. than 20%, e.g. than 10%) from an extension of the second cavity along the direction. This further promotes disturbance-free convection.Example 13 is a cooling chamber (e.g. in-line configuration), comprising: a vacuum chamber; a plurality of transport rollers (e.g. as part of a transport device) for transporting a substrate along a transport surface in the vacuum chamber; a packaging device which is configured to be brought into a plurality of different states (e.g. in each of which the current one is also referred to as the actual state), of which a first state provides a cooling space, which is enclosed by the packaging device and is bounded by the transport surface, and a second state provides the cooling space (and / or provides a greater distance of the packaging device from the transport surface than the first state), which cooling space is exposed at least partially (e.g. along the transport surface, e.g. in and / or counter to the transport direction); a convection cooling device having one or more than one gas outlet configured to supply gas to the cooling space; wherein the convection cooling device is preferably configured according to any one of Examples 1 to 12. This promotes a rapid cooling process, since the cooling space can be evacuated quickly. Preferably, the housing device (e.g. each housing part thereof) can have a cooling surface (e.g. a cooling device) adjoining the cooling space, which cooling surface can be configured, for example, to draw thermal energy from the cooling space (e.g. by means of a heat exchanger and / or by means of liquid nitrogen). For example, one or more than one housing part of the packaging device can be cooled by means of the heat exchanger (e.g. by means of liquid nitrogen), for example if the heat exchanger is integrated into the packaging device. For example, the cooling surface can be cooled during operation to a temperature of below 0° C. Alternatively or in addition to the liquid nitrogen, any other liquid cooling medium of course may be used.Example 14 is the cooling chamber according to example 13, further comprising: a drive device which is configured to drive a movement (e.g. translation) of the packaging device (or one or more than one housing part thereof) in order to bring the packaging device into the first state or into the second state (whereby a change in the actual state of the packaging device, i.e. a change in state thereof, is stimulated), wherein the movement is directed towards or away from the transport surface.Example 15 is the cooling chamber according to Example 13 or 14, further comprising: an actuating device (e.g. comprising actuating element and / or control device) which is configured to link (e.g. to be actuated in response thereto) two or more of the following actual states to one another: an actual state of the convection cooling device (which influences, for example, a mass flow of the gas fed to the cooling space); to link an actual state of the plurality of states of the packaging device to one another; an actual state of the plurality of transport rollers (e.g. their actual rotational speed).Example 16 is the cooling chamber according to one of Examples 13 to 15, wherein the packaging device has a plurality of housing parts between which the transport surface is arranged, wherein the plurality of states differ from one another in a position of the plurality of housing parts relative to one another.Example 17 is the cooling chamber according to one of Examples 13 to 16, wherein the packaging device (e.g. the plurality of housing parts) has a first (e.g. hood-shaped) housing part, in the interior of which the cooling space is provided, wherein the plurality of states differ from one another in a position of the first housing part relative to the transport surface.Example 18 is the cooling chamber according to one of Examples 13 to 17, wherein the packaging device (e.g. the plurality of housing parts) has a second (e.g. plate-shaped) housing part (wherein, for example, the transport surface is arranged between the first and the second housing part), which is configured, for example, to bear, in the first state, against the first housing part and / or a substrate carrier transported along the transport surface, and / or wherein the plurality of states differ, for example, from one another in a position of the second housing part relative to the transport surface.Example 19 is the cooling chamber according to one of Examples 13 to 18, wherein the packaging device (e.g. the plurality of housing parts) has a third housing part which is preferably configured as a substrate carrier and is mounted movably along the transport path by means of the plurality of transport rollers (e.g. the transport device), and / or wherein the plurality of states differ from one another in a position of the third housing part relative to the first housing part.Example 20 a process arrangement (e.g. in-line configuration), the process arrangement comprising: a plurality of vacuum chambers (arranged one behind the other along a transport direction), of which: at least two (i.e. two or more than two) first vacuum chambers are configured as a lock chamber or coating chamber; a second vacuum chamber is arranged between the two first vacuum chambers and is configured as a cooling chamber by means of a convection cooling device; a plurality of transport rollers (e.g. as part of a transport device) for transporting a substrate along a transport surface through the plurality of vacuum chambers; the convection cooling device, which comprises one or more than one (e.g. a plurality of) gas outlet in the second vacuum chamber directed towards the transport surface, for supplying gas towards the transport surface; wherein the cooling chamber is preferably configured according to one of Examples 13 to 19.Example 21 the process arrangement according to example 20, wherein the plurality of vacuum chambers comprises two third vacuum chambers which are configured as transfer chambers and between which the two first vacuum chambers are arranged.Example 22 the process arrangement according to example 20 or 21, wherein the plurality of transport rollers (e.g. the transport device) is configured to transfer the transport between a single transport and a group transport in each of the two third vacuum chambers.Example 23 the process arrangement according to any of Examples 20 to 22, wherein each of the at least two lock chambers comprises: a substrate transfer valve opposite the second vacuum chamber, which for example adjoins a vacuum chamber of the plurality of vacuum chambers (e.g. a chamber interior thereof); and / or a substrate transfer valve facing the second vacuum chamber, which for example adjoins a chamber interior of the second vacuum chamber.Example 24 is the process arrangement according to one of Examples 20 to 23, the plurality of vacuum chambers further comprising: two fourth vacuum chambers, of which: each vacuum chamber is configured as an additional lock chamber and between which the at least two first vacuum chambers and / or the second vacuum chamber are arranged, and / or each fourth vacuum chamber comprises a substrate transfer valve arranged opposite the two first vacuum chambers and / or the second vacuum chamber, said substrate transfer valve being exposed to the earth's atmosphere, for example.Example 25 is the process arrangement according to one of Examples 20 to 24, further comprising: a transfer system which is configured to transfer a substrate carrier (e.g. the transport device) between the two fourth vacuum chambers along a transfer path which is arranged next to the plurality of vacuum chambers.Example 26 is the process arrangement according to one of Examples 20 to 25, the plurality of vacuum chambers further comprising: a fifth vacuum chamber which is arranged between the second vacuum chamber and one of the two first vacuum chambers (if this is configured, for example, as a coating chamber or lock chamber) (e.g. behind the second vacuum chamber in the transport direction), wherein the fifth vacuum chamber is configured for pretreatment (then also referred to as a pretreatment chamber) by means of a pretreatment device (e.g. comprising a plasma source, a heat radiation source and / or a glow device). This achieves the activation of the surface after cooling and thus improves the processing. Preferably, the fifth vacuum chamber is immediately adjacent to the second vacuum chambers or the first vacuum chamber (e.g. if it is a lock chamber).Example 27 is the process arrangement according to one of Examples 20 to 26, further comprising: a drive device for driving the plurality of transport rollers (e.g. as part of the transport device), preferably according to a plurality of operating modes, of which a first operating mode is configured to provide the transport into and / or out of the second vacuum chamber, and a second operating mode (also referred to as pendulum mode) is configured such that the transport within the second vacuum chamber takes place in a pendulum manner (also referred to as pendulum movement or pendulum transport). The oscillating transport can have that the direction of the transport is reversed several times (e.g. more than 10 times), for example cyclically. This homogenized the cooling effect.Example 28 is the process arrangement according to one of Examples 20 to 27, wherein the drive device is configured to carry out the driving in such a way that a substrate is set into a pendulum movement within the second vacuum chamber by means of the plurality of transport rollers. This homogenized the cooling effect.Example 29 is one of Examples 1 to 28, wherein the at least two (i.e. two or more than two) first vacuum chambers have a group of vacuum chambers (which is arranged, for example, between two fourth vacuum chambers and / or between two coating chambers), which group has:at least one (i.e. one or more than one) vacuum chamber (e.g. a plurality of vacuum chambers arranged one behind the other), which are configured as a lock chamber (also referred to as an internal discharge chamber), and / orat least one (i.e. one or more than one) vacuum chamber (e.g. a plurality of vacuum chambers arranged one behind the other) which are configured as a lock chamber (also referred to as an internal infeed chamber), wherein one or more than one vacuum chamber, configured as a cooling chamber, of the plurality of vacuum chambers is arranged between the at least one internal infeed chamber (e.g. adjoining the latter) and the at least one internal outfeed chamber (e.g. adjoining the latter).Example 30 is one of examples 1 to 29, which is further configured according to one of the embodiments explained below.Example 31 is one of examples 1 to 30, wherein each of the plurality of transport rollers is configured as a stub roller.Example 32 is one of Examples 1 to 31, further comprising: a (e.g. plate-shaped) substrate carrier by means of which the transport takes place, wherein the substrate carrier comprises a plurality of depressions (also referred to as substrate receiving pockets), of which, for example, each substrate receiving pocket is configured to receive a substrate or at least adjoins a substrate support surface; wherein the plurality of substrate receiving pockets of the substrate carrier and the gas outlets of the convection cooling device are linked to one another (e.g. coincide) in one or more than one geometric property. This increases the installation space for the second cavities and thus facilitates the removal of the gas. Clearly, the space for recirculating the gas is increased.Example 33 is set up according to example 32, wherein the one or more than one geometric property comprises a geometric grid and / or comprises an extent (e.g. in the transport direction or at least along the transport surface).Example 34 is configured according to example 32 or 33, wherein the convection cooling device has a gas outlet (e.g. provided by means of a bell jar) per substrate receiving pocket of the substrate carrier, and / or wherein the plurality of substrate receiving pockets have a plurality of rows of substrate receiving pockets arranged one behind the other arranged next to one another, and the convection cooling device has a (e.g. gap-shaped) gas outlet per row. This increases the installation space for the second cavities and thus facilitates the removal of the gas.Example 35 is configured according to any one of Examples 32 or 34, wherein the plurality of substrate receiving pockets are spatially distributed according to a grid, and wherein preferably the gas outlets (e.g., the gas outlet of each slat) are spatially arranged according to the grid (e.g., according to the same grid dimension). This achieves that each gas outlet is directed towards one or more substrate receiving pockets.Example 36 is configured according to any of Examples 32 or 35, wherein each of the plurality of depressions has a first extent in one direction (e.g. in the transport direction and / or along the transport surface), and wherein each of the gas outlets (e.g. the gas outlet of each lamella) has a second extent in the direction which deviates from the first extent by less than approximately 50% (e.g. by 25%, e.g. by 10%, e.g. by 5%). This increases the installation space for the second cavities and thus facilitates the removal of the gas.Example 37 is configured according to one of Examples 1 or 36, an actuator configured to influence, e.g. to be actuated in response to, a mass flow of the gas supplied to the convection cooling device (e.g. which is part of the pair of convection cooling devices).Example 38 is configured according to Example 37, wherein the actuator is configured to influence a ratio according to which the mass flow is divided among the pair of convection cooling devices. This clearly achieves that the dynamic pressure caused by the convection from below and / or above onto a substrate can be adjusted, e.g. such that the substrate is not raised by the convection.Example 39 is any of Examples 1 to 38, further configured according to any of the appended claims.According to various embodiments, the cooling gas may include or consist of an inert gas and / or an inert gas. Examples of the inert gas include helium, neon, argon, krypton, xenon, or a mixture of more than one of them. Examples of the inert gas include one or more than one inert gas, molecular nitrogen, molecular carbon dioxide, sulfur hexafluoride, or a mixture of more than one thereof. The inert gas can be adapted to the substrate, for example, and be configured not to react with the substrate. If the substrate is passivated, for example, by oxide or at least by oxide, the inert gas can comprise, for example, molecular oxygen. In the case of a passive surface of the substrate, the cooling gas can also comprise or consist of air, for example technically clean air.According to various embodiments, the substrate is exposed to the cooling gas and / or a pressure thereof (also referred to as cooling pressure). The cooling pressure (illustratively also referred to as elevated pressure) can, for example, be greater than 10 -2 mbar (e.g. than 10 -1 mbar, e.g. as 10 -2 bar, e.g. as 10 -1 bar, e.g. as 0.3 bar) and / or less than 0.5 bar deviate from atmospheric pressure (the pressure of the earth's atmosphere at the site of implementation). Alternatively or additionally, the cooling pressure may deviate from (e.g. be greater than) a process pressure (at which the coating of the substrate takes place), e.g. by a factor of more than 10 -1, e.g. than 10 -2, e.g. than 10 -3, e.g. than 10 -4.FIG. 1A illustrates a convection cooling device 100 according to various embodiments in a schematic side view or cross-sectional view, see for example the above example 1, in operation. The slats 102 can be arranged one behind the other along a first direction 101 (also referred to as longitudinal direction) and / or be elongated along a second direction 105. The longitudinal direction 101 can be, for example, a transport direction, as will be explained in more detail below, or transversely to the transport direction. The second direction 105 can be, for example, transverse to the longitudinal direction 101.During operation, convection of the cooling gas 160 in the cooling region 150 can be excited by means of the fins 102. In operation, the cooling gas 160 may be supplied to the cooling region 150 by means of each fin 102, the convection of which is illustrated here. As illustrated, the cooling gas 160 can emerge from each lamella 102 along the second direction 105 (then also referred to as the outlet direction 105), flow through the cooling region 150 into the gas discharge spaces 104 hin opposition to the outlet direction 105. Each lamella 102 can be assigned, for example, to one or more than one gas discharge space 104 h, to which the lamella 102 adjoins.By means of convection, the substrate (which is transported, for example, along the transport surface 111) can be exposed to the cooling gas and / or the cooling pressure in order to draw thermal energy from the substrate (also referred to as cooling the substrate by means of the cooling gas or, for short, convection cooling). Convective cooling may include the cooling gas absorbing the thermal energy from the substrate.FIG. 1B illustrates the convection cooling device 100 according to various embodiments in a schematic detailed view 100 b, see for example the above example 3. For example, each lamella can have a multiplicity of pipelines (e.g. round tube or square tube), which are arranged one behind the other along a third direction 103 (also referred to as transverse direction 103) and of which each pipeline provides a gas feed space 102 h.The transverse direction 103 can be, for example, transverse to the longitudinal direction 101 and / or the outlet direction 105.Each lamella 102 can have, at its end section adjoining the cooling region 150, a gas outlet 102 awhich opens into the gas feed space 102 hof the lamella. The gas outlet 102 acan, for example, continue the gas supply space 102 hand / or couple it in a fluid-conducting manner to the cooling region 150.FIG. 2A illustrates the operation of the convection cooling device 100 according to various embodiments in a schematic flow diagram 200 a, in which arrows represent the convection of the cooling gas (also referred to as cooling gas flow). The convection cooling device 100 has a gas feed line 202 (illustratively a feed), by means of which the gas feed spaces 102 hare coupled to one another in a fluid-conducting manner. The convection cooling device 100 further comprises a gas discharge line 204, by means of which the gas discharge spaces 104 hare coupled to one another in a fluid-conducting manner. The mass flow of cooling gas emerging from each gas outlet 102 ainto the cooling region 150 can be absorbed by means of one or more than one gas discharge space 104 h.The convection cooling device 100 optionally has a convection source 252 which is configured to generate a pressure difference between the gas feed line 202 and the gas discharge line 204, for example by supplying gas from the gas discharge line 204 to the gas feed line 202, optionally through a heat exchanger. An exemplary implementation of the convection source 252 includes a gas pump by which the cooling gas is circulated.FIG. 2B illustrates a pair 200 of convection cooling devices 100 according to various embodiments in a schematic side view or cross-sectional view, between which the transport surface 111 is arranged and / or the cooling regions 150 of which adjoin.The gas outlet 102 a(and thus the outlet direction 105) of the convection cooling devices 100 can be directed towards a transport surface 111 which extends through the cooling region 150. A substrate can be transported along the transport surface 111 during operation, for example by means of a substrate carrier 110 into which the substrate is inserted. The substrate carrier 110 or at least the substrate may be exposed to the cooling gas when it is transported through the cooling region 150.FIG. 3 illustrates the operation of the pair 200 of convection cooling devices 100 according to various embodiments in a schematic perspective view 300 analogous to FIG.. 1FIG. 4A illustrates a cooling chamber 400 according to various embodiments (see, for example, Example 13) in a schematic side view or cross-sectional view, which comprises one or more than one convection cooling device 402, each convection cooling device 402 of which may be configured, for example, as explained with respect to the convection cooling device 100 (e.g. comprising the fins). The vacuum chamber 802 may have a chamber body, through the interior of which the transport surface 111 extends. Furthermore, the convection cooling device 402 may include one or more gas outlets 102 aconfigured to supply gas to a cooling space 150 adjacent to the transport path in the transport surface 111.FIG. 4B illustrates a cooling chamber 400 according to various embodiments (see, for example, Example 13) in a schematic side view or cross-sectional view comprising one or more than one convection cooling device 402, e.g., convection cooling device 100. The cooling chamber 400 may include a packaging device 404 configured to be brought into a plurality of mutually different states including at least a first state (also referred to as a cooling state) and a second state (also referred to as a transport state). Brought into the cooling state, the packaging device 404 (or at least one or more than one housing part thereof) may have a smaller distance from the transport surface 111 than in the transport state.Brought into the cooling state, the packaging device 404 can house the cooling space 150, e.g. surrounding it on at least 3, 4, 5 or 6 sides.In operation, the substrate which is transported along the transport surface 111 (e.g. in the transport direction 101) can be arranged in a fixed manner in the cooling space 150 or at least adjacent thereto. The packaging device 404 can then be brought into the cooling state, for example by moving a housing part of the packaging device 404 configured as a hood towards the transport surface 111. When the packaging device 404 is placed in the cooling state, the substrate may be exposed to the cooling gas and / or the cooling pressure to draw thermal energy from the substrate. The cooling gas can be supplied to the cooling space 150 by means of the convection cooling device 402 and optionally be removed therefrom again.FIGS. 5A and 5B each illustrate a cooling chamber according to various embodiments 500 a, 500 b(see, for example, Example 13) in a schematic side view or cross-sectional view, which comprises one or more than one convection cooling device 402, e.g. convection cooling device 100. The cooling chamber may comprise two substrate transfer valves 506, between which the cooling space 150 and / or the packaging device 404 are arranged.The packaging device 404 can have two housing parts 502, 504, of which a first housing part 502 is configured as a hood 502 and a second housing part 504 as a (e.g. plate-shaped) housing base 504, and which are mounted movably relative to one another and / or relative to the transport surface 111.The transport device can have a plurality of transport rollers 508 which adjoin the transport surface 111 and are arranged one behind the other along the transport direction 101. Each of the transport rollers can be mounted rotatably about an axis of rotation which is transverse to the transport direction 101.In operation, the substrate which is transported along the transport surface 111 (e.g. in the transport direction 101) can be arranged in a fixed manner in the cooling space 150 or at least adjacent thereto. Then, the packaging device 404 can be brought into the cooling state by moving 511 a hood 502 and the housing base 504 towards each other and / or towards the transport surface 111. When the packaging device 404 is placed in the cooling state, the substrate may be exposed to the cooling gas and / or the cooling pressure to draw thermal energy from the substrate. The cooling gas can be supplied to the cooling space 150 by means of the convection cooling device 402 and optionally be removed therefrom again.The packaging device 404 enables the cooling space 150 to be gas separated (e.g. vacuum tight) from the rest of the vacuum chamber, such that above the cooling space 150 a greater pressure (e.g. a factor of 10, or 10 2, 103, or 10 5 greater) than the interior of the cooling chamber outside the packaging device 404.Alternatively or additionally, by the gas supply, which opens into the cooling chamber 150 and by means of which the cooling gas is supplied, after cooling the substrate, use can be made of gas to draw gas from the cooling chamber 150, for example until it reaches a high vacuum. This simplifies the construction.The cooling space 150 within the packaging device 404 may have a small volume compared to the volume of the interior space of the cooling chamber (e.g., in the ratio of 1 to 5 or less, in the ratio of 1 to 10 or less, e.g., 1 to 50 or less). For this purpose, the spacing of the cooling plates 502, 504 in the cooling state can be designed as small as possible. The cooling is then effected by convection of the cooling gas between the substrate and the cooling plates. This is favorable, for example, for smooth and / or plate-shaped substrates.According to embodiments 500 a, the hood 502 can be mounted in a fixed position relative to the transport surface 111. According to embodiments 500 b, the hood 502 and the housing bottom 504 may be movably (e.g. translationally) supported relative to the transport surface 111.FIG. 6 illustrates the temperature T of a substrate over time Z, which can correspond, for example, to a slot along which the substrate is transported in the transport direction 101 through a plurality of vacuum chambers, in a schematic diagram 600.Here, the phases denote a temperature rise 501 due to plasma pretreatment, a temperature rise 502 due to coating of the substrate (also referred to as coating), a temperature drop 503 due to radiation cooling, and a temperature drop 504 due to convection cooling. The convective cooling may comprise subjecting the substrate to convection of the cooling gas which extracts thermal energy from the substrate. This can achieve that the substrate is exposed to the pressure (also referred to as cooling pressure) of the cooling gas, e.g. in the cooling region.FIG. 7 illustrates a process arrangement 700 in a schematic structural diagram and detailed views 700 a, 700 b, 700 cthereof according to various embodiments, which comprises a plurality of vacuum chambers C 1-C 71 (also referred to as chamber row or chamber system) arranged one behind the other in a row in the transport direction 101.The chamber system comprises:two lock chambers C1, C71 of the first type (see 700a and 700c);two processing systems 702 (see 700 aand 700 c), each of which is arranged between the two lock chambers C 1, C 71 of the first type, and which can optionally differ from one another, for example in a number of vacuum chambers, in a number and / or type of processing devices, in an order of the processing device in the transport direction;one or more cooling systems (see 700b) disposed between the two process systems 702. It can be understood that, alternatively or in addition to the cooling system(s) arranged here between the two process systems 702, one or more analogously configured cooling systems (not shown) can be arranged between the lock chamber C 71 and the rear process system 702 (see 700 c). It can further be understood that in the case of more than two process systems 702, one or more than one analogously configured cooling system (not shown) can be arranged in each case between two process systems 702 directly adjacent to one another.Each of the two lock chambers C 1, C 71 of the first type (also referred to as inlet lock and outlet lock) is configured to transfer a substrate between earth's atmosphere and vacuum. For this purpose, each lock chamber C1, C71 of the first type has a substrate transfer valve (T) which is exposed to the earth's atmosphere.Each of the two process systems 702 includes:one or more than one processing chamber C 21, C 41, C 42 (e.g. comprising vacuum chamber C 21 for pretreatment);a pair of transfer chambers C3, C51 of the first type.Each processing chamber C 21, C 41, C 42 is configured to process, e.g. coat, pretreat (e.g. heat and / or dry), a substrate, etc. By way of example, various processing chambers configured as a coating chamber are illustrated, i.e. processing chambers configured to perform a coating process. Examples of the coating process include: coating the substrate (also referred to as a coating process) with an adhesion layer (see coating chamber C41); coating the substrate with a copper layer (see coating chamber C42, C44, C45).Of the pair of transfer chambers C 3, C 51 of the first type, a first (e.g. input-side) transfer chamber C 3 can be configured to transfer the single transport into the group transport (also referred to as train formation) and a transfer chamber C 51 arranged behind it along the transport direction (e.g. output-side) can be configured to transfer the group transport into the single transport (also referred to as train resolution). In other words, the pair of transfer chambers C 3, C 51 of the first type provides that each substrate transported along the transport direction 101 is first fed to a train formation and then to a train resolution.The cooling system (see 700b) comprises:the cooling chamber C / T8, which is preferably implemented by means of the convection cooling device;two or more than two lock chambers C7, C11 of the second type, between which the cooling chamber C / T8 is arranged;a pair of transfer chambers C5, C31 of the second type, between which the two or more than two lock chambers C7, C11 and / or the cooling chamber C / T8 are arranged;Each of the two or more than two lock chambers C 7, C 11 of the second type (also referred to as internal lock chamber) is configured to transfer a substrate between vacuum and the cooling chamber C / T 8, e.g. the pressure of cooling gas provided therein (which may be, for example, greater than 0.3 mbar. For this purpose, each internal lock chamber C7, C11 comprises a substrate transfer valve (X) exposed to the cooling chamber C / T8 (e.g. its interior).Of the pair of transfer chambers C 5, C 31 of the second type, a first (e.g. input-side) transfer chamber C 5 can be configured for train resolution and a second (e.g. output-side) transfer chamber C 31 arranged behind it along the transport direction can be configured for train formation. In other words, the pair of transfer chambers C 5, C 31 of the second type provides that each substrate transported along the transport direction 101 is first fed to a train resolution and then to a train formation. This facilitates the operation of the internal lock chambers and thus increases the clearance for the cooling pressure (e.g. convection, which facilitates cooling of the substrate by convection.Optionally, the process arrangement may comprise a transfer system 750 configured to transfer a transport object (e.g. a carrier) between the two lock chambers C 1, C 71 of the first type along a transfer path arranged next to the plurality of vacuum chambers. The transfer system may optionally include:a entrance table T0, andExtension table T8.The illustrated implementation of the process arrangement 700 meets high demands on productivity, e.g. on a requirement for a short cycle time, e.g. of 45 seconds or less (i.e. a substrate is transported past the cooling device every 45 seconds). The coating can thus be carried out continuously, for example.In the exemplary implementation shown here, the two internal lock chambers C 7, C 11 may have only a first internal lock chamber C 7 (also referred to as an internal discharge chamber) and only a second internal lock chamber C 11 (also referred to as an internal discharge chamber). As explained above, it can be understood that, as an alternative to a single internal discharge chamber C 7 (see 700 b), it is likewise possible to use a plurality of internal discharge chambers arranged one behind the other, of which discharge chambers directly adjacent to one another are separated from one another by means of a substrate transfer valve 506. Alternatively or additionally, as an alternative to a single internal infeed chamber C 11 (see 700 b), it is likewise possible to use a plurality of internal infeed chambers arranged one behind the other, of which directly adjacent infeed chambers are separated from one another by means of a substrate transfer valve 506In the case of two internal discharge chambers C 7 arranged one behind the other, the lock chamber facing the tension resolution C 5 can preferably be operated as a high-vacuum lock chamber and the lock chamber facing the cooling chamber C / T 8 as a fore-vacuum lock chamber. In the case of two internal infeed chambers C 11 arranged one behind the other, the lock chamber facing the train formation C 31 can preferably be operated as a high-vacuum lock chamber and the lock chamber facing the cooling chamber C / T 8 as a fore-vacuum lock chamber. For example, the following series of chambers can be arranged one behind the other: pull resolution, high vacuum lock chamber, fore vacuum lock chamber, cooling chamber, fore vacuum lock chamber, high vacuum lock chamber, pull formation.In an exemplary implementation of the process arrangement 700, one or more than one substrate per carrier, into which the one or more than one substrate is inserted, is transported by means of the plurality of transport rollers. Multiple carriers are transported as a group (also referred to as carrier group transport) so that they form a continuous carrier band that is transported by the process arrangement 700. Before the maximum permissible substrate temperature is reached, the carriers are separated (i.e. transferred into an individual transport), here by way of example in the vacuum chamber C 5. In one of the internal lock chambers C 7 (also referred to as an internal discharge chamber), a pressure is removed, to which the separated carrier is exposed. The interior of the internal discharge chamber C 7, in which the separated carrier is arranged, is sealed on both sides in the transport direction 101 by means of substrate transfer valves. Inside the internal discharge chamber C 7, one or more cooling members (e.g., a cooling plate, and / or a cooled gas supply) may optionally be disposed. In the cooling chamber C / T 8, carriers and substrates are supplied with inert gas, nitrogen or ambient air as cooling gas at the elevated pressure (e.g. greater than 0.3 bar, e.g. atmospheric pressure) and are thus cooled. The chemical composition of the cooling gas may be such that chemical interaction of the cooling gas with the deposited layer on the substrate is avoided. The cooling gas can optionally be precooled, e.g. to a desired temperature. For this purpose, the cooling gas can be passed through an optional gas-conducting device which is cooled and then directed at the substrate with overpressure. The gas guidance device can be configured such that the gas can be extracted again between the gas outlets 102 a(also referred to as gas supply points). The volume of the cooling chamber can be kept small in order to minimize the pumping-off time before the sluice. Alternatively or additionally, the actively throughflow volume or the throughflow distance around the substrate can be reduced, for example by means of a packaging device 404 which has, for example, a pressure plate and / or a hood (clearly providing a chamber in the cooling chamber). By means of one of the internal lock chambers C 11 (also referred to as internal injection chamber), a pressure reduction to working pressure takes place. One or more cooling elements can optionally be arranged in the interior of the internal discharge chamber, analogously to the internal discharge chamber. After the introduction chamber, a tension is formed in the transfer chamber C31. Then, the coating is continued. Depending on the layer system and requirement, the cooling can be repeated.An exemplary implementation of the cooling system (also referred to as a cooling station) has a plurality of cooling chambers arranged one behind the other along the transport surface.Further exemplary implementations of the process arrangement 700 that meet less stringent requirements for cycle time are explained below.It can generally be understood that the substrate transfer valve between the processing chambers C 41, C 42 can also be omitted.FIG. 8 illustrates the process arrangement 700 according to various embodiments 800 in a schematic structural diagram and detailed views 800 a, 800 b, 800 cthereof, which comprises a plurality of vacuum chambers C 1-C 7 (also referred to as chamber row or chamber system) arranged one behind the other in a row along the transport direction 101.In the illustrated exemplary implementation, the processing arrangement 700 includes:a entrance table T0,an entrance lock C1,a processing chamber C2 for plasma pretreatment,one or more than one coating chamber C4x for double-sided coating with double tube magnetrons,a cooling system C6x at least comprising the cooling chamber;an exit lock C7,an extension table T8.It can be understood that optionally, in addition to the cooling system C 6 xarranged here between the outlet lock C 7 and the coating chamber C 4 x, one or more than one analogously configured cooling system (not illustrated) can be arranged between the cooling system C 6 xand the outlet lock C 7 (see broken line between 700 band 700 c). For example, in the case of a plurality of coating chambers C 4 x, one or more than one analogously configured cooling system (not shown) can be arranged in each case between two coating chambers C 4 xdirectly adjacent to one another.The illustrated implementation of embodiments 800 meets lower demands on productivity, for example a requirement for cycle time of 2 minutes or more (illustratively a medium-productive system, also referred to as "step and go"), but is therefore less complex. The coating takes place stepwise in one or more than one process chamber C 4 xarranged as a coating chamber, each process chamber of which is arranged as a coating chamber by means of one or more coating sources. The transport of a plurality of carriers can take place in accordance with the single transport, so that no jointly transported carrier train has to be formed. The interior of mutually adjacent vacuum chambers can be separated from one another by means of a chamber valve. During coating, the carrier (or analogously a single substrate) can be arranged statically (i.e. in a fixed position) in a coating chamber, be set in a pendulum movement (also referred to as pendulum transport), or be transported uninterruptedly through the coating chamber (also referred to as individual passage). Before the maximum permissible maximum temperature is reached, the carrier (or analogously a single substrate) is transported into a cooling chamber C6x, and therein at elevated pressure (for example greater than 0.3 bar, for example atmospheric pressure) flows in with inert gas, nitrogen or ambient air as cooling gas and is thus cooled. The chemical composition of the cooling gas may be such that chemical interaction of the cooling gas with the deposited layer on the substrate is avoided. The interior of the cooling chamber can be separated from vacuum chambers adjoining the chamber valves. The cooling gas can optionally be precooled, e.g. to a desired temperature. For this purpose, it can be guided with overpressure onto the substrates by a suitable, optionally cooled gas guide device. The gas guidance device can be configured such that the gas can be discharged again between the gas supply points. For this purpose, the cooling gas can be passed through an optional gas-conducting device which is cooled and then directed at the substrate with overpressure. The gas guidance device can be configured such that the gas can be withdrawn again by means of gas discharge spaces 104 hbetween the gas outlets 102 a(also referred to as gas feed points or gas outlet openings).The gas outlet openings can be configured, for example, as longitudinal slots which are elongated transversely to the transport direction 101 (e.g. in the pendulum / dynamic mode). Alternatively, the cooling gas can flow in each case in a directed manner onto the substrates stored in a carrier (for example in the stationary mode). The cooling gas can be conducted to the substrate from one side or from both sides.An exemplary implementation of the cooling system includes a plurality of cooling chambers.After completion of the cooling process, the cooling chamber (or at least the cooling chamber 150) is evacuated again to the process pressure in the coating chambers adjoining it. The substrate is then transported in the transport direction 101 into a processing chamber in which the coating is continued. Alternatively, the substrate can be transported counter to the transport direction 101 into a processing chamber and coated therein again. Depending on the layer system and requirement, the cooling of the substrate can be repeated, or the individual chamber can be omitted or carried out multiple times. Before or after each cooling chamber, a pair of etching chamber and coating chamber need not necessarily be arranged as shown, but instead, alternatively, only one processing chamber (e.g. magnetron processing chamber), e.g. before the cooling chamber, can be arranged (e.g. per cooling chamber).It can generally be understood that the second housing part 504 can likewise be configured as a hood, for example if the first housing part 502 is configured as a hood or as a (e.g. plate-shaped) housing cover.FIG. 9 illustrates a process arrangement 700 in a schematic structural diagram and detailed views 900 a, 900 b, 900 cthereof according to various embodiments 900, which comprises a plurality of vacuum chambers C 1-C 7 (also referred to as chamber row or chamber system) arranged one behind the other in a row in the transport direction 101.In the illustrated exemplary implementation, the processing arrangement comprises:the entry table T0,the entry lock C1,a vacuum chamber C2 for plasma pretreatment,one or more than one coating chamber C4x for double-sided coating with double tube magnetrons,a cooling system C6x comprising: the cooling chamber,an exit lock C7,an extension table T8.The illustrated implementation of embodiments 900 meets lower productivity requirements, e.g. a moderate requirement for cycle time of, for example, 2 minutes or more (illustratively a medium-productivity system, also referred to as "step and go").An exemplary implementation of embodiments 900 has a largely gas-tight pressing device as a housing base 504, which makes tight contact with the carrier arranged in a fixed manner from one or also from both sides (top and bottom), preferably on the carrier frame. The cooling gas is introduced into the cooling chamber 150 housed in this way, so that an increased pressure (compared to the coating chamber) is provided in the cooling chamber 150, to which the substrate is exposed.The cooling gas comprises or consists of, for example, a noble gas, e.g. argon, or a sufficiently inert gas (e.g. based on the layer system), e.g. nitrogen or also ambient air. Advantageously, a closed circuit with circulation and cooling of the gas is used for the cooling gas flow. The advantage of this configuration is the minimization of the volume of the cooling station operating at elevated pressure and the thus reduced amount of gas present in the chamber at a time. The time required for the increase in pressure and the time required for the restoration of the vacuum conditions are thus reduced by more than a factor of 2. The surrounding vacuum chamber is available as a vacuum buffer.FIG. 10 illustrates a convection cooling device 1000 according to various embodiments in a schematic side view or cross-sectional view, see for example the above example 1, in operation, in which each fin 102 comprises a series of serially arranged outlet cups coupled to the same gas supply line 202.FIG. 11 illustrates an additional implementation 1100 of the process arrangement 700 in a schematic structural diagram and detailed views 1100 a, 1100 b, 1100 cthereof according to various embodiments, which has a plurality of vacuum chambers arranged one behind the other in a row in the transport direction 101.FIG. 12 illustrates an additional implementation 1200 of the process arrangement 700 in a schematic structural diagram and detailed views 1200 a, 1200 b, 1200 cthereof according to various embodiments, which has a plurality of vacuum chambers arranged one behind the other in a row in the transport direction 101.Exemplary implementations of the aspects discussed herein are discussed below as working examples.According to working example 1, the production of antennas of high quality and high durability takes place under ambient conditions, which is favored by a layer thickness of the metal coating in the range of several 100 nanometers (nm) up to several micrometers. In particular, the coating of the substrate for producing an antenna can be effected by sputtering by means of a magnetron (also referred to as magnetron sputtering) for the coating. Sputtering by means of a magnetron (also referred to as magnetron sputtering) makes it easier to meet high requirements with regard to the layer adhesion, layer stability under ambient conditions used and with regard to the electro-physical properties and the sufficient coverage.According to working example 2, which can be configured as working example 1, magnetron sputtering is carried out for coating the substrate, whereby (for physical reasons) a comparatively large amount of thermal energy (also referred to as heat) is supplied to the substrate (also referred to as heat input) per area and per layer thickness. This heat input is based on condensation heat, kinetic energy of the sputtered particles, bombardment of the substrate with electrons and ions, recombination heat of ionized particles and further components of the coating plasma, such as electromagnetic radiation and / or photon bombardment. The greater the specification for the layer thickness to be deposited, the greater the heat input into the substrate. This heat input leads to a comparatively large increase in the temperature of the substrate during coating in the case of an invariant heat capacity of the substrate.According to Working Example 3 which may be configured like any one of Working Examples 1 to 2, the allowable maximum temperature of plastic (substrate) during coating is comparatively low, for example, as compared with other materials (such as glass or metal), because it is between 150° C. and 200° C., for example. If the maximum temperature of the plastic is exceeded, the plastic begins to degassed, to change its properties and finally to decompose. This makes it difficult to produce products of sufficient quality. For example, if the maximum temperature is exceeded, the layer adhesion, the layer properties and the layer stability under ambient conditions of later use are impaired.According to Working Example 4, which may be arranged like any one of Working Examples 1 to 3, the substrate is coated with a metal, whereby the thermal emission coefficient of the resulting metal layer is very low, which inhibits the emission of heat via thermal radiation. For example, the emission of the absorbed heat is greatly limited due to a low near maximum temperature (e.g. for plastic).According to Working Example 5, which may be configured like any one of Working Examples 1 to 4, the side of the substrate to be coated is uneven, which limits possibilities of directly contacting the substrate to promote heat dissipation by conduction.According to Working Example 6, which may be arranged like any of Working Examples 1 to 5, there are high requirements for the uniformity of the coating and / or for the all-round nature of the coating, which limits the possibilities for direct contacting of the substrate in order to promote heat dissipation by means of conduction.According to Working Example 7, which can be configured like one of Working Examples 1 to 6, the substrate is coated in a process gas which is under vacuum (for example fine vacuum), which makes it difficult to remove an appreciable amount of heat by means of heat conduction in the process gas. If the pressure of the process gas (also referred to as process pressure) to which the substrate is exposed during coating is, for example, less than 10 -2 mbar and / or the distance to adjacent chamber components for cooling in the range of centimeters, the heat conduction can be physically neglected.According to Working Example 8 which can be arranged like any one of Working Examples 1 to 7, the possible film thickness is limited, which is one for hindrance to satisfying high demands on productivity of an inline coating system.According to working example 9, which can be set up as in one of working examples 1 to 8, the development of modern and / or heavy-duty applications requires increasingly high layer thicknesses with constant or even decreasing effective material thickness and / or heat capacity of the substrates. As a result, the thermal limitations are reduced and / or exceeded.According to working example 10, which can be configured like one of working examples 1 to 9, radiation cooling is effected for extracting thermal energy, which leads to a very long cooling station in a highly productive vacuum system with a high transport speed, and, in conjunction with an increasing layer thickness, requires a long and thus expensive vacuum system. These costs may increase further with decreasing emissivity of the coating, for example, if it is electrically conductive, which is detrimental to meeting high requirements for product costs.According to Working Example 11, which may be arranged like any of Working Examples 1 to 10, a coating procedure is provided in a continuous inline PVD plant in which cooling of the substrate is effected by means of convection to which the substrate is exposed. To simplify convection, a gas pressure (of the cooling gas) and / or a gas flow (of the cooling gas) are provided in one or more than one region of the PVD system along the transport direction (also referred to as a cooling station) in accordance with a specification of cooling the substrate (e.g. to a rate at which thermal energy is extracted). The cooling station can be arranged between two regions (also referred to as coating regions) of the system in which the substrate is coated (for example, for depositing individual partial layers). The specification of cooling of the substrate can be related, for example, to a temperature difference and / or a length of the cooling station. Optionally, the specification can be based on a chemical composition of the cooling gas (also referred to as gas composition) and / or a temperature of the cooling gas (also referred to as gas temperature). Optionally, the specification can relate to a maximum permissible disturbance of the coating regions and / or disturbance of the substrate resulting from the coating of the substrate (e.g. the overall layer system).According to Working Example 12, which may be configured like any one of Working Examples 1 to 11, coating an antenna precursor as a substrate is performed according to specification on a layered structure for a radar antenna (or at least on a component thereof). The antenna precursor may comprise a plastic-based material.According to Working Example 13, which may be configured like any one of Working Examples 1 to 12, coating the substrate comprises coating the substrate with an adhesion promoter layer and / or with one or more than one metallic layer. Optionally, the substrate may be subjected to a (e.g., inline) plasma treatment prior to coating. The deposition of the one or more than one metallic layer takes place, for example (in order to improve productivity), for example, in accordance with an inline configuration in which the substrate is transported through a plurality of magnetron coating chambers arranged one behind the other.According to Working Example 14, which may be configured like any one of Working Examples 1 to 13, the transport of a plurality of substrates is performed by a substrate carrier (also referred to as a carrier) in which the plurality of substrates are loaded. The pretreatment and / or the coating supplies thermal energy to the substrates, so that their temperature rises.According to Working Example 15, which may be configured like any one of Working Examples 1 to 14, a cooling chamber (e.g., in-line configuration, which is also referred to as in-line cooling chamber) is inserted at any location along the transport surface 111 (e.g., along the coating line) at which the temperature of the substrates approaches the maximum allowable temperature. The cooling in the cooling chamber is implemented at an elevated pressure compared to the coating stations by means of flow of cooled gas (also referred to as cooling gas) onto the substrates. The inline cooling chamber may be provided as part of a system (also referred to as a cooling system) which is configured to receive and / or generate a group transport (e.g. of carriers and / or substrates).According to working example 16, which can be configured like one of working examples 1 to 15, the gas used for cooling (also referred to as cooling gas) comprises or consists of a noble gas, e.g. argon, or a gas which is sufficiently inert with respect to the layer system, e.g. nitrogen or also ambient air.According to Working Example 17 which may be arranged like any one of Working Examples 1 to 16, the cooling gas is circulated in a self-contained cycle implementing circulation and cooling of the cooling gas.According to Working Example 18, which may be arranged like any one of Working Examples 1 to 17, various embodiments explained herein are used for vacuum coating.

Claims

Convection cooling device (100), comprising: • a cooling region (150); • a plurality of fins (102) arranged one behind the other along a row, each fin (102) comprising a first cavity (102h) and a gas outlet (102a) adjoining the cooling region (150), which outlet opens into the first cavity (102h), • a plurality of second cavities adjoining the cooling region (150), wherein the plurality of fins (102) are spatially separated from one another such that one of the plurality of second cavities (104h) is formed between two fins (102) directly adjoining one another; • a gas feed line (202), which is coupled to the cooling region (150) by means of the first cavity (102h) of each fin (102), in order to feed gas to the cooling region (150) by means of the fin (102); • a gas discharge line (204), by means of which a plurality of second cavities are coupled to the cooling region (150), in order to draw gas from the cooling region (150).The convection cooling device (100) of claim 1, further comprising: • a convection source (252) configured to generate a pressure differential between the gas supply line (202) and the gas discharge line (204).The convection cooling device (100) of claim 1 or 2, • wherein each fin (102) comprises a pair of wall elements (102w) between which the first cavity (102h) is formed • wherein, preferably, each wall element (102w) of the pair of wall elements (102w) separates the first cavity (102h) from one of the second cavities (104h).The convection cooling device (100) of any one of claims 1 to 3, wherein the plurality of fins (102) are arranged in series along a direction, wherein an extension of the first cavity (102h) along the direction is less than 50% different from an extension of the second cavity (104h) along the direction.A cooling chamber (400) comprising: • a vacuum chamber (802); • a plurality of transport rollers (508) for transporting a substrate along a transport surface (111) in the vacuum chamber (802); • a packaging device (404) configured to be placed in a plurality of states, a first state of which provides a cooling space (150), which is enclosed by the packaging device (404), and which is bounded by the transport surface (111), and a second state of which at least partially exposes the cooling space (150); • a convection cooling device (100) comprising one or more than one gas outlet (102a), each gas outlet (102a) of which is configured to supply gas to the cooling space (150); • wherein the convection cooling device (100) is preferably configured according to any one of claims 1 to 4.The cooling chamber (400) of claim 5, further comprising: a drive device configured to drive movement of the packaging device (404) to excite a change in state of the packaging device (404).Cooling chamber (400) according to claim 5 or 6, further comprising: an actuator configured to be controlled in response to associating an actual state of the convection cooling device (100) and an actual state of the packaging device (404) with each other.The cooling chamber (400) according to any one of claims 5 to 7, • wherein the packaging device (404) comprises a dome-shaped first housing part (502), in the interior of which the cooling space (150) is provided, • wherein the plurality of states preferably differ from each other in a position of the first housing part (502) relative to the transport surface (111).Cooling chamber (400) according to claim 8, wherein the packaging device (404) comprises a plate-shaped second housing part (504), wherein the transport surface (111) is arranged between the first housing part (502) and the second housing part (504).A process arrangement (700) comprising: a plurality of vacuum chambers (802) arranged one behind the other along a transport surface (111), of which: • two first vacuum chambers (802) are arranged as a lock chamber (C7, C11) or a coating chamber (C41, C42, C44, C45); • one second vacuum chamber (802) is arranged between the two first vacuum chambers and is as a cooling chamber (400) by means of a convection cooling device (100); a plurality of transport rollers (508) for transporting a substrate along the transport surface (111) through the plurality of vacuum chambers (802); wherein the convection cooling device (100) comprises one or more than one gas outlet directed towards the transport surface (111) for supplying gas towards the transport surface (111); wherein the cooling chamber (400) is preferably arranged according to any one of claims 6 to 9.

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