DISPLAY DEVICE

Abstract

A display device (100, 300, 400, 500, 600, 700, 800) will be provided. The display device (100, 300, 400, 500, 600, 700, 800) comprises a substrate (110) having a plurality of subpixels (SP) comprising a first subpixel (SP1), a second subpixel (SP2), and a shared-use subpixel (SP') located between the first subpixel (SP1) and the second subpixel (SP2); a plurality of transistors (DT) located in the first subpixel (SP1) and the second subpixel (SP2) of the plurality of subpixels (SP); and a common voltage line (VL) located on one side of the first subpixel (SP1), the second subpixel (SP2), and the shared-use subpixel (SP') such that it applies a common voltage to the first subpixel (SP1), the second subpixel (SP2), and the Creates shared subpixels (SP') and a plurality of connection structures (CP),which are connected in an assigned manner to the majority of transistors (DT), are arranged on the other side of the first subpixel (SP1) and the second subpixel (SP2) and are spaced apart from each other.

Description

BACKGROUND AREA

[0001] The present application relates to a display device and, more particularly, to a display device using a light-emitting diode (LED). DESCRIPTION OF THE RELATED TECHNOLOGY

[0002] As display devices used for a monitor of a computer, a television, a mobile phone, or the like, there are an organic light-emitting display (OLED) device which is a self-emitting device, a liquid crystal display (LCD) device which requires a separate light source, and the like.

[0003] An application range of the display device is extended to personal digital assistants and computer and television monitors, and a display device with a large display area and reduced volume and weight is investigated.

[0004] Furthermore, in recent years, a display device using an LED has attracted attention as a next-generation display device. Because the LED is made of an inorganic rather than an organic material, its reliability is excellent, so its service life is longer than that of a liquid crystal display device or an organic light-emitting display device. Furthermore, the LED has a fast flashing speed, excellent luminous efficiency, and high shock resistance, so its stability is excellent and a high-brightness image can be displayed. OVERVIEW

[0005] An object to be achieved by the present disclosure is to reduce the number of light-emitting diodes required for a repair by having two adjacent subpixels share an auxiliary subpixel.

[0006] Another object to be achieved by the present disclosure is to provide a display device with reduced manufacturing costs and improved production yield.

[0007] Yet another object to be achieved by the present disclosure is to provide a display device that drives an auxiliary subpixel in a predetermined position without separate position programming.

[0008] Still another object to be achieved by the present disclosure is to provide a display device that drives an auxiliary subpixel using a pixel circuit of an adjacent subpixel without placing a separate pixel circuit in the auxiliary subpixel to ensure a sufficient design range.

[0009] Objects of the present disclosure are not limited to the above-mentioned objects, and other objects not mentioned above can be clearly understood by those skilled in the art from the following descriptions.

[0010] According to one aspect of the present disclosure, a display device is provided according to claim 1. Further embodiments are described in the dependent claims. According to one aspect of the present disclosure, a display device comprises a substrate having a plurality of subpixels, including a first subpixel, a second subpixel, and a shared subpixel arranged between the first subpixel and the second subpixel, a plurality of transistors arranged in the first subpixel and the second subpixel of the plurality of subpixels, a common voltage line arranged on one side of the first subpixel, the second subpixel, and the shared subpixel for applying a common voltage to the first subpixel, the second subpixel, and the shared subpixel, and a plurality of connection structures,which are associated with the plurality of transistors, are arranged on the other side (in other words, the side opposite the one side) of the first subpixel and the second subpixel, and are spaced apart from each other. Accordingly, two subpixels share an auxiliary subpixel to ensure a design area and implement high resolution.

[0011] Further detailed matters of the exemplary embodiments are included in the detailed description and the drawings.

[0012] According to the present disclosure, the number of light-emitting diodes for repair is reduced by sharing an auxiliary subpixel to reduce manufacturing costs and improve manufacturing yield.

[0013] According to the present disclosure, no separate pixel circuit is arranged in the auxiliary subpixel in order to ensure a sufficient design area and implement high resolution.

[0014] According to the present disclosure, the auxiliary subpixel is controlled at a predetermined position without separate position programming.

[0015] The effects according to the present disclosure are not limited to the contents exemplified above, and the present application has other various effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other aspects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which: Fig. 1 is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure; Fig. 2A is a top view of a pixel region of a display device according to an exemplary embodiment of the present disclosure; Fig. 2B is a cross-sectional view along a line IIb-IIb' of the Fig. 2A is; Fig. 3A is a top view of a pixel region of a display device according to another exemplary embodiment of the present disclosure; Fig. 3B is a cross-sectional view along a line IIIb-IIIb' of the Fig. 3A is; Fig. 4A is a top view of a pixel region of a display device according to yet another exemplary embodiment of the present disclosure; Fig. 4B is a cross-sectional view along a line IVb-IVb' of the Fig. 4A is; Fig. 5A is a plan view of a pixel region of a display device according to yet another exemplary embodiment of the present disclosure; Fig. 5B is a cross-sectional view along a line Vb-Vb' of the Fig. 5A is; Fig. 6A is a plan view of a pixel region of a display device according to yet another exemplary embodiment of the present disclosure; Fig. 6B is a cross-sectional view along a line VIb-VIb' of the Fig. 6A is; Fig. 7A is a plan view of a pixel region of a display device according to yet another exemplary embodiment of the present disclosure; Fig. 7B is a cross-sectional view along a line VIIb-VIIb' of the Fig. 7A is; Fig. 8A is a plan view of a pixel region of a display device according to yet another exemplary embodiment of the present disclosure; Fig. 8B is a cross-sectional view along a line VIIIb-VIIIb' of the Fig. 8A is; and Fig. 9A to Fig. 9C are schematic diagrams for explaining a manufacturing method of a display device according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENT

[0017] Advantages and features of the present disclosure, and a method for achieving the advantages and features, will become apparent by reference to exemplary embodiments described in detail below along with the accompanying drawings. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but may be implemented in various forms. The exemplary embodiments are provided by way of example only so that those skilled in the art may fully understand the disclosures of the present disclosure and the scope of the present disclosure.

[0018] The shapes, sizes, ratios, angles, numbers, and the like illustrated in the accompanying drawings for describing the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. Like reference numerals generally designate like elements throughout the application. Furthermore, in the following description of the present disclosure, detailed explanation of known related technologies may be omitted so as not to unnecessarily obscure the subject matter of the present disclosure. The terms used herein, such as "comprising," "having," and "consisting of," are generally intended to permit the addition of other components unless the terms are used in conjunction with the term "only." Any reference to the singular may include the plural unless expressly stated otherwise.

[0019] Components are interpreted to have a normal error range, even if this is not explicitly stated.

[0020] When the spatial relationship between two parts is described using terms such as "on", "over", "under" and "beside", one or more parts may be positioned between the two parts, unless the terms are used with the term "immediate" or "direct".

[0021] When one element or layer is placed "on top of" another element or layer, another layer or element may be placed directly on top of the other element or in between.

[0022] Although the terms "first," "second," and the like are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from the other components. Therefore, a first component mentioned below may be a second component in a technical concept of the present disclosure.

[0023] The same reference numerals generally refer to the same elements throughout the application.

[0024] A size and a thickness of each component illustrated in the drawing are illustrated for convenience of description, and the present disclosure is not limited to the size and thickness of the illustrated component.

[0025] The features of various embodiments of the present disclosure may be partially or completely attached or combined with each other and may interlock and operate in technically diverse ways, and the embodiments may be practiced independently of each other or in conjunction with each other.

[0026] Hereinafter, a display device according to exemplary embodiments of the present disclosure will be described in detail with reference to accompanying drawings.

[0027] Fig. 1 is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure. In Fig. 1, for the convenience of description, of various components of the display device 100, only a display panel PN, a gate driver GD, a data driver DD and a timing controller TC are shown.

[0028] Referring to Fig. 1, the display device 100 comprises a display panel PN having a plurality of subpixels SP, a gate driver GD and a data driver DD that supply various signals to the display panel PN, and a control device TC that controls the gate driver GD and the data driver DD.

[0029] The gate driver GD supplies a plurality of scan signals to a plurality of gate lines SL in accordance with a plurality of gate control signals supplied from the timing controller TC. Although Fig. 1 that a gate driver GD is arranged so as to be away from one side of the display panel PN, the number of the gate drivers GD and their arrangement are not limited thereto.

[0030] The data driver DD converts image data input from the timing controller TC into a data voltage using a reference gamma voltage, in accordance with a plurality of data control signals supplied from the timing controller TC. The data driver DD can supply the converted data voltage to the plurality of data lines DL.

[0031] The timing controller TC aligns the externally input image data to supply the image data to the data driver DD. The timing controller TC can generate a gate control signal and a data control signal using externally input synchronization signals, such as a pixel timing signal, a data enable signal, and horizontal / vertical synchronization signals. The timing controller TC supplies the generated gate control signal and data control signal to the gate driver GD and the data driver DD, respectively, to control the gate driver GD and the data driver DD.

[0032] The display panel PN is a configuration that displays images to the user and includes a plurality of subpixels SP. The plurality of subpixels SP may include a first subpixel SP1, a second subpixel SP2, and a shared subpixel SP'. The shared subpixel SP' may be arranged between the first subpixel SP1 and the second subpixel SP2. At this time, the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP' may emit light of the same color. That is, all of the first subpixel SP1, second subpixel SP2, and shared subpixel SP' may be subpixels for emitting red light, subpixels for emitting green light, or subpixels for emitting blue light.

[0033] In the display panel PN, the plurality of scanning lines SL and the plurality of data lines DL overlap, and each of the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP' of the plurality of subpixels SP is connected to the scanning lines SL and the data lines DL. The shared subpixel SP' may not be connected to the scanning lines SL and the data lines DL. Furthermore, although not shown in the drawing, each of the plurality of subpixels SP may be connected to a high-potential power line, a low-potential power line, a reference line, and the like.

[0034] In the display panel PN, an active area AA and a non-active area NA that encloses the active area AA can be defined.

[0035] The active area AA is an area where images are displayed in the display device 100. A plurality of subpixels SP constituting a plurality of pixels PX and a circuit for driving the plurality of subpixels SP may be arranged in the active area AA. The plurality of subpixels is a minimum unit constituting the active area AA, and n subpixels SP may constitute one pixel. A light-emitting diode and a transistor for driving the light-emitting diode are arranged in each of the plurality of subpixels SP. However, a transistor for driving the light-emitting diode LED arranged in the shared subpixel SP' may not be arranged in the shared subpixel SP'. The plurality of light-emitting diodes may be defined in various ways depending on the type of the display panel PN.For example, if the display panel PN is an inorganic light-emitting display panel, the light-emitting diode may be a light-emitting diode (LED) or a micro light-emitting diode (LED).

[0036] A plurality of wiring lines are arranged in the active region AA, which transmit various signals to the plurality of subpixels SP. For example, the plurality of wiring lines may include a plurality of data lines DL that supply a data voltage to each of the plurality of subpixels SP, a plurality of scanning lines SL that supply a scanning signal to each of the plurality of subpixels SP, and the like. The plurality of scanning lines SL extend in the active region AA in one direction to be connected to the plurality of subpixels SP, and the plurality of data lines DL extend in the active region AA in a direction different from the one direction to be connected to the plurality of subpixels SP.In addition, a low-potential power line, a high-potential power line, and the like may be further arranged in the active region AA, but are not limited thereto.

[0037] The non-active area NA is an area where no images are displayed, so the non-active area NA can be defined as an area extending from the active area AA. A connection line that transmits a signal to the subpixel SP of the active area AA, a pad electrode, a drive IC such as a gate driver IC or a data driver IC, or the like can be arranged in the non-active area NA.

[0038] Here, the non-active area NA may be arranged on a back surface of the display panel PN, that is, on a surface on which the subpixels SP are not arranged or can be omitted, and is not limited to, as shown in the drawing.

[0039] Here, a driver, such as a gate driver GD, a data driver DD, and a timing controller TC, can be connected to the display panel PN in various ways. For example, the gate driver GD can be mounted in the non-active area NA in a gate-in-panel (GIP) manner or mounted in a gate-in-active area (GIA) manner in the active area AA between the plurality of subpixels SP. For example, the data driver DD and the timing controller TC are formed in a separate flexible film and a printed circuit board PCB. The data driver DD and the timing controller TC can be electrically connected to the display panel PN by connecting the flexible film and the printed circuit board PCB to the pad electrode formed in the non-active area NA of the display panel PN.

[0040] When the gate driver GD is mounted in the GIP manner, and the data driver DD and timing controller TC transmit a signal to the display panel PN through a pad electrode of the non-active region NA, an area of ​​the non-active region NA exceeding a predetermined level is required to accommodate the gate driver GD and the pad electrode. Accordingly, a bezel can be enlarged.

[0041] In contrast, if the gate driver GD is mounted in the active area AA in the GIA manner, and a side line connecting the signal line on the front side of the display panel PN to the gate electrode on a back side of the display panel PN is formed such that the flexible film and the circuit board on a back side of the display panel PN are connected, the non-active area NA on the front side of the display panel PN can be minimized. This means that if the gate driver GD, the data driver DD, and the timing controller TC are connected to the display panel PN as described above, a zero aperture with essentially no bezel can be implemented.

[0042] Fig. 2A is a plan view of a pixel region of a display device according to an exemplary embodiment of the present disclosure, and Fig. 2B is a cross-sectional view of a pixel region of a display device according to an exemplary embodiment of the present disclosure. In Fig. 2A and Fig. 2B shows that all the light-emitting diodes arranged in the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP' are normal, and the light-emitting diodes are transmitted normally. Fig. 2A, for convenience of description, of various components of the display device 100, only a light-emitting diode LED, a common voltage line VL, a connection structure CP, and a dummy structure DP are shown.

[0043] Referring to Fig. 2A, the plurality of subpixels SP may include a first subpixel SP1, a second subpixel SP2, and a shared subpixel SP'. The first subpixel SP1 and the second subpixel SP2 are subpixels that are commonly used, and the shared subpixel SP' is a subpixel that is used when any one of the first subpixel SP1 and the second subpixel SP2 is defective. For example, when a light-emitting diode (LED) itself disposed in any one of the first subpixel SP1 and the second subpixel SP2 is defective, or the light-emitting diode is not transmitted, or the light-emitting diode is erroneously transmitted such that it deviates from a normal position, the shared subpixel SP' may be used instead of the corresponding subpixel.Next, as described above, an example where a shared light-emitting diode LED' of the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP' is normal and is normally transmitted will be described.

[0044] Referring to Fig. 2A and Fig. 2B, the substrate 110 is a substrate that supports components disposed above the display device 100 and may be an insulating substrate. For example, the substrate 110 may be formed from glass or resin. Further, the substrate 110 may comprise a polymer or plastic. In some example embodiments, the substrate 110 may be formed from a plastic material that is flexible. A plurality of pixels are formed on the substrate 110 for displaying images.

[0045] A pixel circuit for driving the light-emitting diode is arranged in each of the first subpixel SP1 and the second subpixel SP2 of the plurality of subpixels SP on the substrate 110. This means that the pixel circuit is not arranged in the shared subpixel SP'.

[0046] The pixel circuit may include a plurality of transistors and a plurality of capacitors. Fig. 2B, for convenience of description, only a drive transistor DT and a storage capacitor Cst are shown among the devices of the pixel circuit. However, the pixel circuit may further include, but is not limited to, a switching transistor, a detection transistor, an emission control transistor, and the like.

[0047] First, a light-shielding layer BSM is disposed on the substrate 110. The light-shielding layer BSM blocks light incident on the active layers ACT of the plurality of transistors to minimize leakage current. For example, the light-shielding layer BSM is disposed under the active layer ACT of the driving transistor DT in such a way that light incident on the active layer ACT is blocked. When light is incident on the active layer ACT, a leakage current occurs, which affects the reliability of the transistor. Accordingly, the light-shielding layer BSM, which blocks light, is disposed on the substrate 110 to improve the reliability of the driving transistor DT.The light-shielding layer BSM may be formed by a non-light-transmitting conductive material such as, but not limited to, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0048] A buffer layer 111 is disposed on the light-shielding layer BSM. The buffer layer 111 can reduce the penetration of moisture or contaminants through the substrate 110. The buffer layer 111 can be configured by a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. However, the buffer layer 111 can be omitted depending on a type of substrate 110 or a type of transistor, but is not limited thereto.

[0049] A drive transistor DT having an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE is arranged on the buffer layer 111.

[0050] Although in Fig. 2B, an additional buffer layer may be disposed between the substrate 110 and the light-shielding layer BSM. The additional buffer layer may be configured to reduce the penetration of moisture or contaminants through the substrate 110 by a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), such as the buffer layer 111.

[0051] First, the active layer ACT of the drive transistor DT is disposed on the buffer layer 111. The active layer ACT may be formed of a semiconductor material such as, but is not limited to, an oxide semiconductor, amorphous silicon, or polysilicon. Furthermore, although not shown in the drawings, other transistors, such as a switching transistor, a detection transistor, and an emission control transistor, other than the drive transistor DT, may be further disposed. The active layers of the transistors may also be formed of a semiconductor material such as, but are not limited to, an oxide semiconductor, amorphous silicon, or polysilicon.The active layer of the transistor included in the pixel circuit, such as the driving transistor DT, the switching transistor, the detection transistor, and the emission control transistor, may be formed of the same material or formed of different materials.

[0052] A gate insulating layer 112 is disposed on the active layer ACT. The gate insulating layer 112 is an insulating layer that electrically isolates the active layer ACT from the gate electrode GE and may be formed by, but is not limited to, a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx).

[0053] The gate electrode GE is disposed on the gate insulating layer 112. The gate electrode GE may be formed of a conductive material such as, but is not limited to, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0054] Furthermore, a connection electrode CNT may be disposed on the gate insulating layer 112. The connection electrode CNT may be formed of the same material as the gate electrode GE and may be electrically connected to the source electrode SE.

[0055] A first interlayer insulating layer 113 and a second interlayer insulating layer 114 are disposed on the gate electrode GE. Contact holes are formed in the first interlayer insulating layer 113 and the second interlayer insulating layer 114, through which each of the source electrode SE and the drain electrode DE is connected to the active layer ACT. The first interlayer insulating layer 113 and the second interlayer insulating layer 114 are insulating layers that protect underlying components and can be configured by, but are not limited to, single layers or double layers of silicon oxide (SiOx) or silicon nitride (SiNx).

[0056] The storage capacitor Cst may be disposed on the gate insulating layer 112. The storage capacitor Cst may be configured by a metal layer TM and a gate electrode GE as a capacitor electrode, but is not limited thereto and may be implemented in various ways.

[0057] The metal layer TM may be disposed on the first interlayer insulating layer 113. The metal layer TM may be disposed such that it overlaps the gate electrode GE with the first interlayer insulating layer 113 therebetween.

[0058] The source electrode SE and the drain electrode DE, which are electrically connected to the active layer ACT, are disposed on the second interlayer insulation layer 114. The drain electrode DE is electrically connected to the storage capacitor Cst and the second electrode 135 of the light-emitting diode LED, and the source electrode SE is connected to the other device of the pixel circuit. The source electrode SE and the drain electrode DE may be formed by a conductive material such as, but are not limited to, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof.

[0059] A first planarization layer 115 is disposed on the source electrode SE and the drain electrode DE. The first planarization layer 115 may planarize an upper portion of the pixel circuit including the drive transistor DT. The first planarization layer 115 may be formed by a single layer or a double layer, and may be formed by, for example, benzocyclobutene or an organic acrylic material, but is not limited thereto.

[0060] A plurality of reflection plates RF may be arranged on the first planarization layer 115. In particular, the plurality of reflection plates RF are arranged below the plurality of light-emitting diodes LEDs in such a way that they are electrically connected to the light-emitting diodes in a corresponding manner.

[0061] The reflection plate RF is a device that reflects light emitted by the plurality of light-emitting diodes (LEDs) above the substrate 110 and can be formed in a shape corresponding to each of the plurality of subpixels (SP). The reflection plate RF can reflect the light emitted by the light-emitting diodes (LEDs) and can also be used as an electrode that electrically connects the light-emitting diodes (LEDs) and the pixel circuit. This means that the reflection plate RF can electrically connect the first electrode 134 and the common voltage line (VL). Therefore, the reflection plate RF can have various conductive layers, taking into account light reflection efficiency and resistance.For example, the reflection plate RF may use a non-transparent conductive layer such as silver (Ag), aluminum (Al), molybdenum (Mo), titanium (Ti) or an alloy thereof, and a translucent conductive layer such as indium tin oxide ITO, but the structure of the reflection plate RF is not limited to this.

[0062] An intermediate electrode CE may be disposed on the first planarization layer 115. The intermediate electrode CE may be connected to the plurality of interconnection structures CP and the drain electrode DE of the driving transistor DT through a contact hole. This means that the intermediate electrode CE may electrically connect the driving transistor DT disposed in the first subpixel SP1 and the first light-emitting diode LED1, or the driving transistor DT disposed in the second subpixel SP2 and the second light-emitting diode LED2. Here, the intermediate electrode CE may be formed of the same material as the plurality of reflection plates RF, but is not limited thereto.

[0063] A plurality of light-emitting diodes (LEDs) are arranged in each of the plurality of subpixels SP on the plurality of reflection plates RF. The light-emitting diode (LED) is an element that emits light through a current and may include a red light-emitting diode that emits red light, a green light-emitting diode that emits green light, and a light-emitting diode that emits blue light. It can implement light of various colors, including white, through a combination thereof. For example, the light-emitting diode (LED) may be a light-emitting diode (LED) or a micro-LED, but is not limited to these.

[0064] The first light-emitting diode LED1 may be arranged in the first subpixel SP1, the second light-emitting diode LED2 may be arranged in the second subpixel SP2, and the shared light-emitting diode LED' may be arranged in the shared subpixel SP'. Here, the first light-emitting diode LED1, the second light-emitting diode LED2, and the shared light-emitting diode LED' may emit light of the same color. This means that the first light-emitting diode LED1, the second light-emitting diode LED2, and the shared light-emitting diode LED' may be red light-emitting diodes, green light-emitting diodes, or blue light-emitting diodes.Here, each of the first light-emitting diode LED1 and the second light-emitting diode LED2 is connected to a transistor of each of the first subpixel SP1 and the second subpixel SP2 so as to be individually driven. In contrast, the shared light-emitting diode LED' of the shared subpixel SP' can serve as an auxiliary light-emitting diode of the first light-emitting diode LED1 and the second light-emitting diode LED2. Accordingly, the shared light-emitting diode LED' can be driven by a transistor of the first subpixel SP1 or the second subpixel SP2 through the connection structure CP.However, in the display device 100 according to the exemplary embodiment of the present disclosure, both the first light-emitting diode LED1 and the second light-emitting diode LED2 are normal and are transmitted normally, so that the common-use light-emitting diode LED' cannot be used.

[0065] An adhesive layer CF is disposed between the plurality of light-emitting diodes (LEDs) and the plurality of reflection plates (RFs). The adhesive layer CF can fix the light-emitting diode (LEDs) arranged on the reflection plate (RF). Furthermore, the adhesive layer CF can be formed to include a conductive material for electrically connecting the reflection plate (RF) and the first electrode 134 of the light-emitting diode (LED).

[0066] The plurality of light-emitting diodes (LEDs) includes a first semiconductor layer 131, an emission layer 132, a second semiconductor layer 133, a first electrode 134, a second electrode 135, and a passivation layer 136. In the present disclosure, the plurality of light-emitting diodes (LEDs) are illustrated as vertical light-emitting diodes, but are not limited thereto.

[0067] The first semiconductor layer 131 is disposed on the adhesive layer CF, and the second semiconductor layer 133 is disposed on the first semiconductor layer 131. The first semiconductor layer 131 and the second semiconductor layer 133 may be layers formed by doping n-type and p-type impurities into a specific material. For example, the first semiconductor layer 131 and the second semiconductor layer 133 may be layers doped with n-type and p-type impurities into a material such as gallium nitride (GaN), indium aluminum phosphide (InAlP), or gallium arsenide (GaAs). The p-type impurity may be magnesium (Mg), zinc (Zn), beryllium (Be), and the like, and the n-type impurity may be silicon (Si), germanium, tin (Sn), and the like, but is not limited to these.

[0068] The emission layer 132 is arranged between the first semiconductor layer 131 and the second semiconductor layer 133. Holes and electrons are supplied to the emission layer 132 from the first semiconductor layer 131 and the second semiconductor layer 133 to emit light. The emission layer 132 can be formed by a single layer or a multi-quantum well (MQW) structure and can be formed of, for example, indium gallium nitride (InGaN), gallium nitride (GaN), or the like, but is not limited thereto.

[0069] The first electrode 134 is disposed between the first semiconductor layer 131 and the adhesive layer CF. The first electrode 134 is an electrode that electrically connects the high-potential voltage line VL and the first semiconductor layer 131. In this case, the first semiconductor layer 131 is a semiconductor layer doped with a p-type impurity, and the first electrode 134 may be an anode. The first electrode 134 may be formed by a conductive material, for example, a light-transmitting conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or an alloy thereof, but is not limited thereto.

[0070] The second electrode 135 is disposed on the second semiconductor layer 133. The second electrode 135 may be disposed on top of the second semiconductor layer 133. The second electrode 135 is an electrode that electrically connects the drive transistor DT and the second semiconductor layer 133. In this case, the second semiconductor layer 133 is a semiconductor layer doped with an n-type impurity, and the second electrode 135 may be a cathode. The second electrode 135 may be formed by a conductive material, for example, a light-transmissive conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), or an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or an alloy thereof, but is not limited thereto.

[0071] The passivation layer 136 is disposed on sidewalls of the first semiconductor layer 131, the emission layer 132, the second semiconductor layer 133, the first electrode 134, and the second electrode 135. The passivation layer 136 surrounds the first semiconductor layer 131, the emission layer 132, the second semiconductor layer 133, the first electrode 134, and the second electrode 135. The passivation layer 136 is a layer for protecting the first semiconductor layer 131, the emission layer 132, the second semiconductor layer 133, the first electrode 134, and the second electrode 135. For example, the passivation layer 136 may be formed by, but is not limited to, transparent epoxy, silicon oxide (SiOx), or silicon nitride (SiNx).

[0072] Next, a second planarization layer 121 and a third planarization layer 122 are arranged to enclose the light-emitting diode LED.

[0073] The second planarization layer 121 overlaps portions of the side surfaces of the plurality of light-emitting diodes (LEDs) to fix and protect them. For example, the second planarization layer 121 may be formed by, but is not limited to, benzocyclobutene or an organic acrylic material.

[0074] The third planarization layer 122 may be formed to cover an upper portion of the second planarization layer 121 and a part of the side surface of the light-emitting diode (LED). For example, the third planarization layer 122 may be formed by, but is not limited to, benzocyclobutene or an organic acrylic material.

[0075] A connection structure CP and a common voltage line VL are arranged on the third planarization layer 122. The common voltage line VL can be electrically connected to the reflection plate RF arranged below the light-emitting diode LED through a contact hole formed in the second planarization layer 121 and the third planarization layer 122. That is, the common voltage line VL for applying a common voltage to the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP' is arranged on one side of the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP'. For example, the common voltage line VL can be a high-potential power line that transmits a high-potential power voltage, but is not limited to this.

[0076] The interconnection structure CP can electrically connect the second electrode 135 of the light-emitting diode LED and the driving transistor DT through a contact hole formed in the second planarization layer 121 and the third planarization layer 122. This means that in the display device 100 according to the exemplary embodiment of the present disclosure, the first light-emitting diode LED1 and the second light-emitting diode LED2 operate normally. Therefore, in order to individually drive each of the first light-emitting diode and the second light-emitting diode, the first interconnection structure CP1 and a second interconnection structure CP2 of the interconnection structure CP can be arranged to be spaced apart from each other.This means that the first connection structure CP1, located on the other side (i.e., the side opposite to one side) of the first subpixel SP1, can connect the driving transistor DT and the first light-emitting diode LED1 located in the first subpixel SP1. The second connection structure CP2, located on the other side (i.e., the side opposite to one side) of the second subpixel SP2, can connect the driving transistor DT and the second light-emitting diode LED2 located in the second subpixel SP2.

[0077] A dummy structure DP connected to the shared light-emitting diode LED' may be arranged on the same layer as the interconnection structure CP. Therefore, the dummy structure DP may be formed of the same material as the plurality of interconnection structures CP. When the first subpixel SP1 and the second subpixel SP2 are normal, the shared light-emitting diode LED' arranged in the shared subpixel SP' does not need to be driven. Accordingly, the shared light-emitting diode LED' does not need to be connected to the driving transistor DT arranged in the first subpixel SP1 or the second subpixel SP2, and the dummy structure DP may be arranged to be spaced apart from the first interconnection structure CP1 and the second interconnection structure CP2. Accordingly, the dummy structure DP may be arranged to be floating.

[0078] Generally, in the plurality of subpixels arranged on the substrate, a defective subpixel that does not emit light normally may be generated. For example, if the light-emitting diode itself is defective or the light-emitting diode is not transmitted normally, the corresponding subpixel may become a defective subpixel. Therefore, to prepare for the occurrence of a defective subpixel, an additional subpixel that emits the same light as each of the plurality of subpixels is arranged. For example, if the plurality of subpixels is configured by a red subpixel, a green subpixel, and a blue subpixel, two red subpixels that emit light based on the same data signal, two green subpixels that emit light based on the same data signal, and two blue subpixels that emit light based on the same data signal are arranged on the substrate.Therefore, even though one red subpixel is a defective subpixel, another red subpixel emits light to suppress the defect of the entire display device. However, when the display device is configured as described above, a separate additional area is required to secure placement space for the additional subpixel, making it difficult to implement a high-resolution display device. Furthermore, since the number of light-emitting diodes to be transferred to the display device doubles, the manufacturing cost of the display device is significantly increased.

[0079] Therefore, during an initial manufacturing process of the display device, the light-emitting diode is not duplicated in advance, but only an area for performing a subsequent repair process is left for manufacturing the display device. This means that if a subpixel is a defective subpixel, a repair process is used to transfer the light-emitting diode that emits light of the same color as a color emitted by the subpixel to an area where the repair process is performed. In this case, the light-emitting diode is not initially duplicated, so the manufacturing cost of the display device can be reduced more than that described above. However, a type of light-emitting diode for performing the repair process may be limited.Furthermore, a flip-chip type light-emitting diode is generally used to perform the repair process. When the initially transferred light-emitting diode is a vertical type or a lateral type, the type of light-emitting diode is different, so the emission characteristics may vary. Furthermore, a disadvantage of flip-chip type light-emitting diodes is that it is difficult to reduce the size of the light-emitting diode in terms of electrode connection or transfer.

[0080] Therefore, in the display device 100 according to the exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2, which emit the same light color and are adjacent to each other, can share the shared subpixel SP' located between the first subpixel SP1 and the second subpixel SP2 as an auxiliary subpixel. Accordingly, in the display device 100 according to the exemplary embodiment of the present disclosure, it is necessary to transmit 1.5 times as many light-emitting diodes (LEDs) as the minimum number of light-emitting diodes (LEDs) required to display one image. Therefore, the manufacturing yield of the display device 100 can be improved, and the manufacturing cost of the display device 100 can be reduced.

[0081] Furthermore, in the display device 100 according to the exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2 are not defined to have individual auxiliary subpixels, but to share a shared subpixel SP', so that a design range can be ensured. For example, if all individual subpixels have auxiliary subpixels, a total of six subpixels can be defined as one pixel. However, in the display device 100 according to the exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2 jointly use a shared subpixel SP', so that a total of 4.5 subpixels SP can be defined as one pixel.Therefore, an area occupied by one pixel is reduced, so that the number of subpixels SP included in the display device 100 can be increased, so that the high-resolution display device can be implemented.

[0082] Hereinafter, a display device according to various exemplary embodiments of the present disclosure will be described, in which a defective light-emitting diode is arranged in the first subpixel or the second subpixel or the light-emitting diode is transmitted with error.

[0083] Fig. 3A is a top view of a pixel region of a display device 300 according to another exemplary embodiment of the present disclosure. Fig. Figure 3B is a cross-sectional view along line IIIb-IIIb' of the Fig. 3A. In Fig. 3A and Fig. 3B shows that the light-emitting diodes arranged in the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP' are transmitted normally, but only the first light-emitting diode LED1 is defective. Fig. 3A, for the sake of convenience of description, only a light-emitting diode LED, a common voltage line VL, and a connection structure CP are shown among various components of the display device 300. In the display device 300 of the Fig. 3A and Fig. 3B is of those of the display device 100 of the Fig. 1 to Fig. 2B differs only in whether the first light-emitting diode LED1 is defective, the presence of the dummy structure DP, and the connection structure CP. However, the other components are essentially the same. Therefore, redundant description will be omitted.

[0084] Referring to Fig. 3A and Fig. 3B, the interconnection structure CP is arranged on the third planarization layer 122. The interconnection structure CP can electrically connect the second electrode 135 of the light-emitting diode LED and the driving transistor DT through a contact hole formed in the second planarization layer 121 and the third planarization layer 122. In the display device 300 according to another exemplary embodiment of the present disclosure, the first light-emitting diode LED1 is defective, so that the first subpixel SP1 does not emit light. Therefore, instead of the first light-emitting diode LED1 arranged in the first subpixel SP1, the shared-use light-emitting diode LED' arranged in the shared-use subpixel SP' can be driven.Specifically, the first connection structure CP1 may electrically connect the driving transistor DT arranged in the first subpixel SP1 and the shared light-emitting diode LED'. Therefore, the shared light-emitting diode LED' may be electrically connected to the driving transistor DT through the first connection structure CP1 and the intermediate electrode CE. Furthermore, the second connection structure CP2 may electrically connect the driving transistor DT arranged in the second subpixel SP2 and the second light-emitting diode LED2. Therefore, the first connection structure CP1 and the second connection structure CP2 may be arranged to be spaced apart from each other.

[0085] In the display device 300 according to another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2, which emit the same light color and are adjacent to each other, can share the shared subpixel SP' located between the first subpixel SP1 and the second subpixel SP2 as an auxiliary subpixel. Accordingly, the manufacturing yield of the display device 300 can be improved, and the manufacturing cost of the display device 300 can be reduced.

[0086] Furthermore, in the display device 300 according to another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2 are not defined to have individual auxiliary subpixels, but share a shared subpixel SP', so that a design area can be ensured. Therefore, an area occupied by one pixel is reduced, so that the number of subpixels SP present in the display device 300 can be increased, so that the high-resolution display device can be implemented.

[0087] In the display device 300 according to another exemplary embodiment of the present disclosure, when the first light-emitting diode LED1 arranged in the first subpixel SP1 is defective, the shared light-emitting diode LED' arranged in the shared subpixel SP' is driven instead to repair the defective subpixel. Specifically, to drive the shared light-emitting diode LED' arranged in the shared subpixel SP', the first connection structure CP1 may electrically connect the drive transistor DT arranged in the first subpixel SP1 and the shared light-emitting diode LED'.This means that the shared subpixel SP' can be driven by the first connection structure CP1 as an auxiliary subpixel of the first subpixel SP1, without a separate pixel circuit in the shared subpixel SP' in which the shared light-emitting diode LED' is arranged. Accordingly, in the display device 300 according to another exemplary embodiment of the present disclosure, the shared subpixel SP', which is an auxiliary subpixel, can be driven without separate position programming such that the shared subpixel SP' can emit light.Furthermore, in the display device 300 according to another exemplary embodiment of the present disclosure, only one light-emitting diode LED is turned on per subpixel SP, so that the shared subpixel SP' is used as an auxiliary subpixel to repair the defective pixel without brightness equalization between the subpixels SP.

[0088] Fig. 4A is a top view of a pixel region of a display device 400 according to yet another exemplary embodiment of the present disclosure. Fig. Figure 4B is a cross-sectional view along line IVb-IVb' of the Fig. 4A. In Fig. 4A and Fig. 4B shows that the light-emitting diodes LED arranged in the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP' are transmitted normally, but only the second light-emitting diode LED2 is defective. Fig. 4A, for the sake of convenience of description, only a light-emitting diode LED, a common voltage line VL, and a connection structure CP are shown among various components of the display device 400. In the display device 400 of the Fig. 4A and Fig. 4B is only the question whether the second light-emitting diode LED2 is defective, presence of the dummy structure DP and the connection structure CP different from those of the display device 100 of the Fig. 1 to Fig. 2B, but other components are essentially the same. Therefore, redundant description will be omitted.

[0089] Referring to Fig. 4A and Fig. 4B, the interconnection structure CP is arranged on the third planarization layer 122. The interconnection structure CP can electrically connect the second electrode 135 of the light-emitting diode LED and the driving transistor DT through a contact hole formed in the second planarization layer 121 and the third planarization layer 122. In the display device 400 according to yet another exemplary embodiment of the present disclosure, the second light-emitting diode LED2 is defective, so that the second subpixel SP2 does not emit light. Therefore, instead of the second light-emitting diode LED2 arranged in the second subpixel SP2, the shared-use light-emitting diode LED' arranged in the shared-use subpixel SP' can be driven.Specifically, the second connection structure CP2 may electrically connect the driving transistor DT arranged in the second subpixel SP2 and the shared light-emitting diode LED'. Therefore, the shared light-emitting diode LED' may be electrically connected to the driving transistor DT through the second connection structure CP2 and the intermediate electrode CE. Furthermore, the first connection structure CP1 may electrically connect the driving transistor DT arranged in the first subpixel SP1 and the first light-emitting diode LED1. Therefore, the first connection structure CP1 and the second connection structure CP2 may be arranged to be spaced apart from each other.

[0090] In the display device 400 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2, which emit the same light color and are adjacent to each other, can share the shared subpixel SP' located between the first subpixel SP1 and the second subpixel SP2 as an auxiliary subpixel. Accordingly, the manufacturing yield of the display device 400 can be improved, and the manufacturing cost of the display device 400 can be reduced.

[0091] Furthermore, in the display device 400 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2 are not defined to have individual auxiliary subpixels, but rather share a shared subpixel SP', so that a design range can be ensured. Therefore, an area occupied by one pixel is reduced, so that the number of subpixels SP present in the display device 400 can be increased, so that the high-resolution display device can be implemented.

[0092] In the display device 400 according to yet another exemplary embodiment of the present disclosure, when the second light-emitting diode LED2 arranged in the second subpixel SP2 is defective, the shared-use light-emitting diode LED' arranged in the shared-use subpixel SP' is driven instead to repair the defective subpixel. Specifically, the second connection structure CP2 for driving the shared-use light-emitting diode LED' arranged in the shared-use subpixel SP' may electrically connect the drive transistor DT arranged in the second subpixel SP2 and the shared-use light-emitting diode LED'.This means that, through the second connection structure CP2, the shared subpixel SP' can be controlled as an auxiliary subpixel of the second subpixel SP2, without a separate pixel circuit in the shared subpixel SP' in which the shared light-emitting diode LED' is arranged. Accordingly, in the display device 400 according to yet another exemplary embodiment of the present disclosure, the shared subpixel SP', which is an auxiliary subpixel, can be controlled without separate position programming such that the shared subpixel SP' can emit light.Furthermore, in the display device 400 according to yet another exemplary embodiment of the present disclosure, only one light-emitting diode LED is turned on per subpixel SP, so that the shared subpixel SP' is used as an auxiliary subpixel for repairing the defective pixel without brightness equalization between the subpixels SP.

[0093] Fig. 5A is a top view of a pixel region of a display device 500 according to yet another exemplary embodiment of the present disclosure. Fig. Figure 5B is a cross-sectional view along the line Vb-Vb' of the Fig. 5A. In Fig. 5A and Fig. 5B shows that all the light-emitting diodes arranged in the second subpixel SP2 and the shared subpixel SP' are normal, and the light-emitting diodes are also transmitted normally, but the first light-emitting diode LED1 is erroneously transmitted to the first subpixel SP1 such that it deviates from a normal position. Fig. 5A, for the sake of convenience of description, only a light-emitting diode LED, a common voltage line VL, and a connection structure CP are shown among various components of the display device 500. In the display device 500 of the Fig. 5A and Fig. 5B are only whether the first light-emitting diode LED1 was erroneously transmitted, presence of the dummy structure DP and the connection structure CP different from those of the display device 100 of the Fig. 1 to Fig. 2B, however, other components are essentially the same. Therefore, redundant description will be omitted.

[0094] Referring to Fig. 5A and Fig. 5B, the first light-emitting diode LED1 is transmitted erroneously, so that the first light-emitting diode LED1 is not connected to the first connection structure CP1. Therefore, the first light-emitting diode LED1 cannot be connected to the driving transistor DT arranged in the first subpixel SP1 and cannot emit light. Therefore, in the display device 500 according to yet another exemplary embodiment of the present disclosure, the shared subpixel SP' can emit light instead of the first subpixel. Here, in Fig. 5A and Fig. 5B illustrates that the first light-emitting diode LED1 is not connected to the first interconnection structure CP1. However, even though the first light-emitting diode LED1 is connected to the first interconnection structure CP1, if sufficient connection is not provided to drive the first light-emitting diode LED1, the shared subpixel SP' may emit light instead of the first subpixel SP1.

[0095] Referring to Fig. 5A and Fig. 5B, the interconnection structure CP is arranged on the third planarization layer 122. The interconnection structure CP can electrically connect the second electrode 135 of the light-emitting diode LED and the driving transistor DT through a contact hole formed in the second planarization layer 121 and the third planarization layer 122. In the display device 500 according to yet another exemplary embodiment of the present disclosure, the first light-emitting diode LED1 is erroneously connected and is not connected to the driving transistor DT, so that the first subpixel SP1 does not emit light. Therefore, instead of the first light-emitting diode LED1 arranged in the first subpixel SP1, the shared-use light-emitting diode LED' arranged in the shared-use subpixel SP' can be driven.Specifically, the first interconnection structure CP1 may electrically connect the driving transistor DT disposed in the first subpixel SP1 and the shared light-emitting diode LED'. Therefore, the shared light-emitting diode LED' may be electrically connected to the driving transistor DT through the first interconnection structure CP1 and the intermediate electrode CE. Furthermore, the second interconnection structure CP2 may electrically connect the driving transistor DT disposed in the second subpixel SP2 and the second light-emitting diode LED2. Therefore, the first interconnection structure CP1 and the second interconnection structure CP2 may be arranged to be spaced apart from each other.

[0096] In the display device 500 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2, which emit the same light color and are adjacent to each other, can share the shared subpixel SP' located between the first subpixel SP1 and the second subpixel SP2 as an auxiliary subpixel. Accordingly, the manufacturing yield of the display device 500 can be improved, and the manufacturing cost of the display device 500 can be reduced.

[0097] Furthermore, in the display device 500 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2 are not defined to have individual auxiliary subpixels, but rather share a shared subpixel SP', so that a design range can be ensured. Therefore, an area occupied by one pixel is reduced, so that the number of subpixels SP included in the display device 500 can be increased, so that the high-resolution display device can be implemented.

[0098] In the display device 500 according to yet another exemplary embodiment of the present disclosure, when the first light-emitting diode LED1 arranged in the first subpixel SP1 is faulty, the shared-use light-emitting diode LED' arranged in the shared-use subpixel SP' is driven instead to repair the defective subpixel. Specifically, the first connection structure CP1 may electrically connect the drive transistor DT arranged in the first subpixel SP1 and the shared-use light-emitting diode LED' such that the shared-use light-emitting diode LED' arranged in the shared-use subpixel SP' is driven.This means that the shared subpixel SP' can be controlled as an auxiliary subpixel of the first subpixel SP1 through the first connection structure CP1 without a separate pixel circuit in the shared subpixel SP' in which the shared light-emitting diode LED' is arranged. Accordingly, in the display device 500 according to yet another exemplary embodiment of the present disclosure, the shared subpixel SP', which is an auxiliary subpixel, can be controlled without separate position programming such that the shared subpixel SP' can emit light.Furthermore, in the display device 500 according to yet another exemplary embodiment of the present disclosure, only one light-emitting diode LED is turned on per subpixel SP, so that the shared subpixel SP' is used as an auxiliary subpixel for repairing the defective pixel without brightness equalization between subpixels SP.

[0099] Fig. 6A is a top view of a pixel region of a display device 600 according to yet another exemplary embodiment of the present disclosure. Fig. Figure 6B is a cross-sectional view along line VIb-VIb' of the Fig. 6A. In Fig. 6A and Fig. 6B shows that all the light-emitting diodes arranged in the first subpixel SP1 and the shared subpixel SP' are normal, and the light-emitting diodes are also transmitted normally, but the second light-emitting diode LED2 is erroneously transmitted to the second subpixel SP2 such that it deviates from a normal position. Fig. 6A, for the sake of convenience of description, only a light-emitting diode LED, a common voltage line VL, and a connection structure CP are shown among various components of the display device 600. In the display device 600 of the Fig. 6A and Fig. 6B are only whether the second light-emitting diode LED2 is faulty transmitted, presence of the dummy structure DP and the connection structure CP different from those of the display device 100 of the Fig. 1 to Fig. 2B, however, other components are essentially the same. Therefore, redundant description will be omitted.

[0100] Referring to Fig. 6A and Fig. 6B, the second light-emitting diode LED2 is transmitted erroneously, so that the second light-emitting diode LED2 is not connected to the second connection structure CP2. Therefore, the second light-emitting diode LED2 cannot be connected to the driving transistor DT arranged in the second subpixel SP2 and cannot emit light. Therefore, in the display device 600 according to yet another exemplary embodiment of the present disclosure, the shared subpixel SP' can emit light instead of the second subpixel SP2. Here, in Fig. 6A and Fig. 6B illustrates that the second light-emitting diode LED2 is not connected to the second interconnection structure CP2. However, even though the second light-emitting diode LED2 is connected to the second interconnection structure CP2, if sufficient connection is not provided to drive the second light-emitting diode LED2, the shared subpixel SP' may emit light instead of the second subpixel SP2.

[0101] Referring to Fig. 6A and Fig. 6B, the interconnection structure CP is arranged on the third planarization layer 122. The interconnection structure CP can electrically connect the second electrode 135 of the light-emitting diode LED and the driving transistor DT through a contact hole formed in the second planarization layer 121 and the third planarization layer 122. In the display device 600 according to yet another exemplary embodiment of the present disclosure, the second light-emitting diode LED2 is erroneously connected and is not connected to the driving transistor DT, so that the second subpixel SP2 does not emit light. Therefore, instead of the second light-emitting diode LED2 arranged in the second subpixel SP2, the shared-use light-emitting diode LED' arranged in the shared-use subpixel SP' can be driven.Specifically, the second connection structure CP2 may electrically connect the driving transistor DT arranged in the second subpixel SP2 and the shared light-emitting diode LED'. Therefore, the shared light-emitting diode LED' may be electrically connected to the driving transistor DT through the second connection structure CP2 and the intermediate electrode CE. Furthermore, the first connection structure CP1 may electrically connect the driving transistor DT arranged in the first subpixel SP1 and the first light-emitting diode LED1. Therefore, the first connection structure CP1 and the second connection structure CP2 may be arranged to be spaced apart from each other.

[0102] In the display device 600 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2, which emit the same light color and are adjacent to each other, can share the shared subpixel SP' located between the first subpixel SP1 and the second subpixel SP2 as an auxiliary subpixel. Accordingly, the manufacturing yield of the display device 600 can be improved, and the manufacturing cost of the display device 600 can be reduced.

[0103] Furthermore, in the display device 600 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2 are not defined to have individual auxiliary subpixels, but rather share a shared subpixel SP', so that a design range can be ensured. Therefore, an area occupied by one pixel is reduced, so that the number of subpixels SP included in the display device 600 can be increased, so that the high-resolution display device can be implemented.

[0104] In the display device 600 according to yet another exemplary embodiment of the present disclosure, when the second light-emitting diode LED2 arranged in the second subpixel SP2 is faulty, the shared light-emitting diode LED' arranged in the shared subpixel SP' is driven instead to repair the defective subpixel. Specifically, the second connection structure CP2 for driving the shared light-emitting diode LED' arranged in the shared subpixel SP' may electrically connect the drive transistor DT arranged in the second subpixel SP2 and the shared light-emitting diode LED'.This means that, through the second connection structure CP2, the shared subpixel SP' can be controlled as an auxiliary subpixel of the second subpixel SP2 without a separate pixel circuit in the shared subpixel SP' in which the shared light-emitting diode LED' is arranged. Accordingly, in the display device 600 according to yet another exemplary embodiment of the present disclosure, the shared subpixel SP', which is an auxiliary subpixel, can be controlled without separate position programming such that the shared subpixel SP' can emit light.Furthermore, in the display device 600 according to yet another exemplary embodiment of the present disclosure, only one light-emitting diode LED is turned on per subpixel SP, so that the shared subpixel SP' is used as an auxiliary subpixel for repairing the defective pixel without brightness equalization between the subpixels SP.

[0105] Fig. 7A is a top view of a pixel region of a display device 700 according to yet another exemplary embodiment of the present disclosure. Fig. Figure 7B is a cross-sectional view along line VIIb-VIIb' of the Fig. 7A. In Fig. 7A and Fig. 7B shows that all the light-emitting diodes arranged in the second subpixel SP2 and the shared subpixel SP' are normal, and the light-emitting diodes are also transmitted normally, but the first light-emitting diode LED1 is not transmitted to the first subpixel SP1. Fig. 7A, for the sake of convenience of description, only a light-emitting diode LED, a common voltage line VL, and a connection structure CP are shown among various components of the display device 700. In the display device 700 of Fig. 7A and Fig. 7B are only whether the first light-emitting diode LED1 is not transmitted, presence of the dummy structure DP and the connection structure CP different from those of the display device 100 of the Fig. 1 to Fig. 2B, but other components are essentially the same. Therefore, redundant description will be omitted.

[0106] Referring to Fig. 7A and Fig. 7B, the first light-emitting diode LED1 is not transferred, so the light-emitting diode is not disposed on the reflection plate RF of the first subpixel SP1. Accordingly, the second planarization layer 121 and the third planarization layer 122 are disposed on the reflection plate of the first subpixel SP1. Therefore, the first subpixel SP1 cannot emit light. Therefore, in the display device 700 according to yet another exemplary embodiment of the present disclosure, the shared subpixel SP' can emit light instead of the first subpixel SP1.

[0107] Referring to Fig. 7A and Fig. 7B, the interconnection structure CP is arranged on the third planarization layer 122. The interconnection structure CP can electrically connect the second electrode 135 of the light-emitting diode LED and the driving transistor DT through a contact hole formed in the second planarization layer 121 and the third planarization layer 122. In the display device 700 according to yet another exemplary embodiment of the present disclosure, the first light-emitting diode LED1 is not transmitted, so that the first subpixel SP1 does not emit light. Therefore, instead of the first subpixel SP1, the shared light-emitting diode LED' arranged in the shared subpixel SP' can be driven. In particular, the first interconnection structure CP1 can electrically connect the driving transistor DT arranged in the first subpixel SP1 and the shared light-emitting diode LED'.Therefore, the shared light-emitting diode LED' may be electrically connected to the driving transistor DT through the first connection structure CP1 and the intermediate electrode CE. Furthermore, the second connection structure CP2 may electrically connect the driving transistor DT arranged in the second subpixel SP2 and the second light-emitting diode LED2. Therefore, the first connection structure CP1 and the second connection structure CP2 may be arranged such that they are spaced apart from each other.

[0108] In the display device 700 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2, which emit the same light color and are adjacent to each other, can share the shared subpixel SP' located between the first subpixel SP1 and the second subpixel SP2 as an auxiliary subpixel. Accordingly, the manufacturing yield of the display device 700 can be improved, and the manufacturing cost of the display device 700 can be reduced.

[0109] Furthermore, in the display device 700 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2 are not defined to have individual auxiliary subpixels, but share a shared subpixel SP', so that a design range can be ensured. Therefore, an area occupied by one pixel is reduced, so that the number of subpixels SP included in the display device 700 can be increased, so that the high-resolution display device can be implemented.

[0110] In the display device 700 according to yet another exemplary embodiment of the present disclosure, when the first light-emitting diode LED1 arranged in the first subpixel SP1 is not transferred, the shared light-emitting diode LED' arranged in the shared subpixel SP' is driven instead to repair the defective subpixel. Specifically, the first connection structure CP1 for driving the shared light-emitting diode LED' arranged in the shared subpixel SP' may electrically connect the drive transistor DT arranged in the first subpixel SP1 and the shared light-emitting diode LED'.This means that, through the first connection structure CP1, the shared subpixel SP' can be controlled as an auxiliary subpixel of the first subpixel SP1 without a separate pixel circuit in the shared subpixel SP' in which the shared light-emitting diode LED' is arranged. Accordingly, in the display device 700 according to yet another exemplary embodiment of the present disclosure, the shared subpixel SP', which is an auxiliary subpixel, can be controlled without separate position programming such that the shared subpixel SP' can emit light.Furthermore, in the display device 700 according to yet another exemplary embodiment of the present disclosure, only one light-emitting diode LED is turned on per subpixel SP, so that the shared subpixel SP' is used as an auxiliary subpixel for repairing the defective pixel without brightness equalization between the subpixels SP.

[0111] Fig. 8A is a top view of a pixel region of a display device 800 according to yet another exemplary embodiment of the present disclosure. Fig. Figure 8B is a cross-sectional view along line VIIIb-VIIIb' of the Fig. 8A. In Fig. 8A and Fig. 8B shows that all the light-emitting diodes arranged in the first subpixel SP1 and the shared subpixel SP' are normal, and the light-emitting diodes are also transmitted normally, but the second light-emitting diode LED2 is not transmitted to the second subpixel SP2. Fig. 8A, for the sake of convenience of description, only a light-emitting diode LED, a common voltage line VL, and a connection structure CP are shown among various components of the display device 800. In the display device 800 of the Fig. 8A and Fig. 8B are only whether the second light-emitting diode LED2 is not transferred, presence of the dummy structure DP and the connection structure CP different from those of the display device 100 of the Fig. 1 to Fig. 2B, however, other components are essentially the same. Therefore, redundant description will be omitted.

[0112] Referring to Fig. 8A and Fig. 8B, the second light-emitting diode LED2 is not transferred, so the light-emitting diode LED is not disposed on the reflection plate RF of the second subpixel SP2. Accordingly, the second planarization layer 121 and the third planarization layer 122 are disposed on the reflection plate RF of the second subpixel SP2. Therefore, the second subpixel SP2 cannot emit light. Therefore, in the display device 800 according to yet another exemplary embodiment of the present disclosure, the shared subpixel SP' can emit light instead of the second subpixel SP2.

[0113] Referring to Fig. 8A and Fig. 8B, the interconnection structure CP is arranged on the third planarization layer 122. The interconnection structure CP can electrically connect the second electrode 135 of the light-emitting diode LED and the driving transistor DT through a contact hole formed in the second planarization layer 121 and the third planarization layer 122. In the display device 800 according to yet another exemplary embodiment of the present disclosure, the second light-emitting diode LED2 is not transmitted, so that the second subpixel SP2 does not emit light. Therefore, instead of the second subpixel SP2, the shared light-emitting diode LED' arranged in the shared subpixel SP' can be driven. In particular, the second interconnection structure CP2 can electrically connect the driving transistor DT arranged in the second subpixel SP2 and the shared light-emitting diode LED'.Therefore, the shared light-emitting diode LED' may be electrically connected to the driving transistor DT through the second connection structure CP2 and the intermediate electrode CE. Furthermore, the first connection structure CP1 may electrically connect the driving transistor DT arranged in the first subpixel SP1 and the first light-emitting diode LED1. Therefore, the first connection structure CP1 and the second connection structure CP2 may be arranged to be spaced apart from each other.

[0114] In the display device 800 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2, which emit the same light color and are adjacent to each other, can share the shared subpixel SP' located between the first subpixel SP1 and the second subpixel SP2 as an auxiliary subpixel. Accordingly, the manufacturing yield of the display device 800 can be improved, and the manufacturing cost of the display device 800 can be reduced.

[0115] Furthermore, in the display device 800 according to yet another exemplary embodiment of the present disclosure, the first subpixel SP1 and the second subpixel SP2 are not defined to have individual auxiliary subpixels, but rather share a shared subpixel SP', so that a design range can be ensured. Therefore, an area occupied by one pixel is reduced, so that the number of subpixels SP included in the display device 800 can be increased, so that the high-resolution display device can be implemented.

[0116] In the display device 800 according to yet another exemplary embodiment of the present disclosure, when the second light-emitting diode LED2 arranged in the second subpixel SP2 is not transferred, the shared light-emitting diode LED' arranged in the shared subpixel SP' is driven instead to repair the defective subpixel. Specifically, the second connection structure CP2 for driving the shared light-emitting diode LED' arranged in the shared subpixel SP' may electrically connect the drive transistor DT arranged in the second subpixel SP2 and the shared light-emitting diode LED'.This means that the shared subpixel SP' can be controlled as an auxiliary subpixel of the second subpixel SP2 through the second connection structure CP2 without a separate pixel circuit in the shared subpixel SP' in which the shared light-emitting diode LED' is arranged. Accordingly, in the display device 800 according to yet another exemplary embodiment of the present disclosure, the shared subpixel SP', which is an auxiliary subpixel, can be controlled without separate position programming such that the shared subpixel SP' can emit light.Furthermore, in the display device 800 according to yet another exemplary embodiment of the present disclosure, only one light-emitting diode LED is turned on per subpixel SP, so that the shared subpixel SP' is used as an auxiliary subpixel for repairing the defective pixel without brightness equalization between subpixels.

[0117] Hereinafter, a method of manufacturing a display device 800 according to an exemplary embodiment of the present disclosure will be described with reference to Fig. 9A to Fig. 9C will be described in detail.

[0118] Fig. 9A to Fig. 9C are schematic diagrams for explaining a method of manufacturing a display device according to an exemplary embodiment of the present invention. As shown in Fig. 8A and Fig. 8B is in the Fig. 9A to Fig. 9C shows that all the light-emitting diodes arranged in the first subpixel SP1 and the shared subpixel SP' are normal, and the light-emitting diode LED is also transmitted normally, but the second light-emitting diode LED2 is not transmitted to the second subpixel SP2. For convenience of description, various components of the display device 800 are not shown in Fig. 9A only one light emitting diode LED is shown, and in Fig. 9B and Fig. 9C only shows a light-emitting diode LED, a common voltage line VL, a connection structure CP, and a temporary structure LP. In Fig. 9A to Fig. 9C is only a temporary structure TP to the Fig. 8A and Fig. 8B, but other components are essentially the same, so redundant description is omitted.

[0119] First, referring to Fig. 9A and Fig. 9B, after transferring the plurality of light-emitting diodes LED to the plurality of subpixels SP, a common voltage line VL may be arranged on one side, and the temporary structure TP may be arranged on the other side.

[0120] The temporary structure TP is arranged on the other side of the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP' such that, to detect a defective subpixel SP, the first subpixel SP1, the second subpixel SP2, and the shared subpixel SP' are simultaneously turned on. For example, when the light-emitting test is performed by supplying a power source to the common voltage line VL and the temporary structure TP, if the light-emitting diode LED is normal and transmitted normally, the light-emitting diode LED can emit light. As described above, the second light-emitting diode LED2 is not transmitted to the second subpixel SP2, so the second subpixel cannot emit light.

[0121] Although in Fig. 9A and Fig. 9B, it is shown that the second light-emitting diode LED2 is not transmitted, but this is not limited to this. Therefore, if any of the first light-emitting diode LED1 and the second light-emitting diode LED2 is defective, or any of them is erroneously transmitted, or any of them is not transmitted, the present disclosure can be applied in the same way.

[0122] Referring to Fig.9C, the second subpixel SP2 is defective, so that the shared subpixel SP' can be driven as an auxiliary subpixel of the second subpixel SP2. Therefore, the temporary structure TP can be structured as the first connection structure CP1 and the second connection structure CP2 such that the first subpixel SP1 and the shared subpixel SP', which are normal, can be driven individually. Specifically, the temporary structure TP can be structured as the first connection structure CP1 and the second connection structure CP2. Therefore, the first subpixel SP1 can be driven by the driving transistor DT arranged in the first subpixel SP1 through the first connection structure CP1, and the shared subpixel SP' can be driven by the driving transistor DT arranged in the second subpixel SP2 through the second connection structure CP2.Here, the temporary structure TP arranged jointly in the plurality of subpixels SP is structured as the first connection structure CP1 and the second connection structure CP2, so that a length of the plurality of connection structures CP can be longer than a width of a subpixel SP.

[0123] The exemplary embodiments of the present disclosure may also be described as follows:

[0124] According to one aspect of the present disclosure, a display device is provided.The display device comprises a substrate having a plurality of subpixels including a first subpixel, a second subpixel, and a shared subpixel arranged between the first subpixel and the second subpixel; a plurality of transistors arranged in the first subpixel and the second subpixel of the plurality of subpixels; a common voltage line arranged on one side of the first subpixel, the second subpixel, and the shared subpixel for applying a common voltage to the first subpixel, the second subpixel, and the shared subpixel; and a plurality of interconnection structures associated with the plurality of transistors arranged on the other side (i.e., the side opposite to the one side) of the first subpixel and the second subpixel and spaced apart from each other.

[0125] The first subpixel, the second subpixel, and the shared subpixel can emit light of the same color.

[0126] The display device may further include an intermediate electrode connecting the plurality of transistors and the plurality of interconnection structures, and a plurality of reflection plates connected to the common voltage line. The intermediate electrode and the plurality of reflection plates may be arranged on the same layer and formed of the same material.

[0127] The display device may further include a plurality of light-emitting diodes, including a first light-emitting diode arranged in the first subpixel and a second light-emitting diode arranged in the second subpixel. The plurality of light-emitting diodes may be arranged on the plurality of reflection plates such that they are electrically connected to the plurality of reflection plates. The plurality of connection structures may include a first connection structure connecting a transistor of the plurality of transistors arranged in the first subpixel and the first light-emitting diode, and a second connection structure connecting a transistor of the plurality of transistors arranged in the second subpixel and the second light-emitting diode.

[0128] The display device may further include a dummy structure disposed on the other side (i.e., the side opposite the one side) of the shared subpixel, disposed on the same layer as the plurality of interconnection structures, formed of the same material, and spaced apart from the plurality of interconnection structures. The plurality of light-emitting diodes may further include a shared light-emitting diode disposed on the shared subpixel and connected to the dummy structure.

[0129] The display device may further include a plurality of light-emitting diodes, including a first light-emitting diode disposed in the first subpixel, a second light-emitting diode disposed in the second subpixel, and a shared light-emitting diode disposed in the shared subpixel. The shared light-emitting diode may be electrically connected to one of the plurality of transistors disposed in the first subpixel and one of the plurality of transistors disposed in the second subpixel.

[0130] The plurality of light-emitting diodes may be arranged on the plurality of reflection plates such that they are electrically connected to the plurality of reflection plates. When the first light-emitting diode among the first light-emitting diode and the second light-emitting diode is defective, the plurality of connection structures may include a first connection structure connecting a transistor among the plurality of transistors arranged in the first subpixel and the shared light-emitting diode, and a second connection structure connecting a transistor among the plurality of transistors arranged in the second subpixel and the second light-emitting diode.

[0131] The plurality of light-emitting diodes may be arranged on the plurality of reflection plates such that they are electrically connected to the plurality of reflection plates. When the second light-emitting diode among the first light-emitting diode and the second light-emitting diode is defective, the plurality of connection structures may include a first connection structure connecting a transistor among the plurality of transistors arranged in the first subpixel and the first light-emitting diode, and a second connection structure connecting a transistor among the plurality of transistors arranged in the second subpixel and the shared light-emitting diode.

[0132] The first light-emitting diode may be electrically isolated from at least one of the plurality of interconnection structures and the plurality of reflection plates. The second light-emitting diode and the shared light-emitting diode may be arranged on the plurality of reflection plates such that they are electrically connected to the plurality of reflection plates. The plurality of interconnection structures may include a first interconnection structure connecting a transistor of the plurality of transistors arranged in the first subpixel and the shared light-emitting diode, and a second interconnection structure connecting a transistor of the plurality of transistors arranged in the second subpixel and the second light-emitting diode.

[0133] The second light-emitting diode may be electrically isolated from at least one of the plurality of interconnection structures and the plurality of reflection plates. The first light-emitting diode and the shared light-emitting diode may be arranged on the plurality of reflection plates such that they are electrically connected to the plurality of reflection plates. The plurality of interconnection structures may include a first interconnection structure connecting a transistor of the plurality of transistors arranged in the first subpixel and the first light-emitting diode, and a second interconnection structure connecting a transistor of the plurality of transistors arranged in the second subpixel and the shared light-emitting diode.

[0134] The display device may further include a plurality of light-emitting diodes, including a second light-emitting diode arranged in the second subpixel and a shared light-emitting diode arranged in the shared subpixel. The shared light-emitting diode may be electrically connected to a transistor of the plurality of transistors arranged in the first subpixel, and the connection structure may be insulated from the reflection plate in the first subpixel and overlap the reflection plate.

[0135] The display device may further include a plurality of light-emitting diodes, including a first light-emitting diode arranged in the first subpixel and a shared light-emitting diode arranged in the shared subpixel. The shared light-emitting diode may be electrically connected to a transistor of the plurality of transistors arranged in the second subpixel, and the connection structure may be insulated from the reflection plate in the second subpixel and overlap the reflection plate.

[0136] A length of the plurality of interconnection structures may be longer than the width of a subpixel of the plurality of subpixels.

[0137] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be embodied in many different forms without departing from the technical concept of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are presented for illustrative purposes only, but are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. It should therefore be understood that the exemplary embodiments of the present disclosure described above are illustrative in all aspects and do not limit the present disclosure.

Claims

[1] A display device (100, 300, 400, 500, 600, 700, 800), comprising: a substrate (110) having a plurality of subpixels (SP) including a first subpixel (SP1), a second subpixel (SP2), and a shared subpixel (SP') disposed between the first subpixel (SP1) and the second subpixel (SP2); a plurality of transistors (DT) arranged in the first subpixel (SP1) and the second subpixel (SP2) of the plurality of subpixels (SP); a common voltage line (VL) arranged on one side of the first subpixel (SP1), the second subpixel (SP2), and the shared subpixel (SP') such that a common voltage is applied to the first subpixel (SP1), the second subpixel (SP2), and the shared subpixel (SP'); and a plurality of connection structures (CP) connected in an associated manner to the plurality of transistors (DT), arranged on the other side of the first subpixel (SP1) and the second subpixel (SP2) and arranged at a distance from one another. [2] The display device (100, 300, 400, 500, 600, 700, 800) according to claim 1, wherein the first subpixel (SP1), the second subpixel (SP2) and the shared subpixel (SP') emit light of the same color. [3] The display device (100, 300, 400, 500, 600, 700, 800) according to claim 1 or 2, further comprising: an intermediate electrode (CE) connecting the plurality of transistors (DT) and the plurality of connection structures (CP); and a plurality of reflection plates (RF) connected to the common voltage line (VL), wherein the intermediate electrode (CE) and the plurality of reflection plates (RF) are arranged on the same layer and are formed of the same material. [4] The display device (100, 300, 400) according to claim 3, further comprising: a plurality of light-emitting diodes (LEDs) comprising a first light-emitting diode (LED1) arranged in the first subpixel (SP1) and a second light-emitting diode (LED2) arranged in the second subpixel (SP2), wherein the plurality of light-emitting diodes (LEDs) are arranged on the plurality of reflection plates (RF) such that they are electrically connected to the plurality of reflection plates (RF), and which has a majority of connection structures (CP): a first connection structure (CP1) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the first subpixel (SP1) and the first light-emitting diode (LED1); and a second connection structure (CP2) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the second subpixel (SP2) and the second light-emitting diode (LED2). [5] The display device (100) according to claim 4, further comprising: a dummy structure (DP) arranged on the other side of the shared subpixel (SP') and arranged on the same layer as the plurality of connection structures (CP), formed of the same material and arranged at a distance from the plurality of connection structures (CP), wherein the plurality of light-emitting diodes (LEDs) further comprises a shared light-emitting diode (LED') arranged on the shared subpixel (SP') and connected to the dummy structure (DP). [6] The display device (300, 400, 500, 600, 700, 800) according to claim 3, further comprising: a plurality of light-emitting diodes (LEDs) comprising a first light-emitting diode (LED1) arranged in the first subpixel (SP1), a second light-emitting diode (LED2) arranged in the second subpixel (SP2), and a shared light-emitting diode (LED') arranged in the shared subpixel (SP'), wherein the shared light-emitting diode (LED') is electrically connected to a transistor (DT) arranged in the first subpixel (SP1) or a transistor (DT) arranged in the second subpixel (SP2) of the plurality of transistors (DT). [7] The display device (300, 400, 500, 600, 700, 800) according to claim 6, wherein the plurality of light-emitting diodes (LED) are arranged on the plurality of reflection plates (RF) such that they are electrically connected to the plurality of reflection plates (RF) when the first light-emitting diode (LED1) of the first light-emitting diode (LED1) and the second light-emitting diode (LED2) is defective, the plurality of connection structures (CP) comprises: a first connection structure (CP1) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the first subpixel (SP1) and the shared light-emitting diode (LED'); and a second connection structure (CP2) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the second subpixel (SP2) and the second light-emitting diode (LED2). [8] The display device (300, 400, 500, 600, 700, 800) according to claim 6, wherein the plurality of light-emitting diodes are arranged on the plurality of reflection plates (RF) such that they are electrically connected to the plurality of reflection plates (RF) when the second light-emitting diode (LED2) of the first light-emitting diode (LED1) and the second light-emitting diode (LED2) is defective, the plurality of connection structures (CP) comprises: a first connection structure (CP1) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the first subpixel (SP1) and the first light-emitting diode (LED1); and a second connection structure (CP2) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the second subpixel (SP2) and the shared light-emitting diode (LED'). [9] The display device (500) according to claim 6, wherein the first light-emitting diode (LED1) is electrically insulated from at least one of the plurality of connection structures (CP) and the plurality of reflection plates (RF), the second light-emitting diode (LED2) and the shared light-emitting diode (LED') are arranged on the plurality of reflection plates (RF) such that they are electrically connected to the plurality of reflection plates (RD), and which has a majority of connection structures (CP): a first connection structure (CP1) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the first subpixel (SP1) and the shared light-emitting diode (LED'); and a second connection structure (CP2) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the second subpixel (SP2) and the second light-emitting diode (LED2). [10] The display device (600) according to claim 6, wherein the second light-emitting diode (LED2) is electrically isolated from at least one of the plurality of connection structures (CP) and the plurality of reflection plates (RF), the first light-emitting diode (LED1) and the shared light-emitting diode (LED') are arranged on the plurality of reflection plates (RF) such that they are electrically connected to the plurality of reflection plates (RF), and which has a majority of connection structures (CP): a first connection structure (CP1) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the first subpixel (SP1) and the first light-emitting diode (LED1); and a second connection structure (CP2) connecting a transistor (DT) of the plurality of transistors (DT) arranged in the second subpixel (SP2) and the shared light-emitting diode (LED'). [11] The display device (700) according to claim 3, further comprising: a plurality of light-emitting diodes (LEDs), comprising a second light-emitting diode (LED2) arranged in the second subpixel (SP2) and a shared light-emitting diode (LED') arranged in the shared subpixel (SP'), wherein the shared light-emitting diode (LED') is electrically connected to a transistor (DT) of the plurality of transistors (DT) arranged in the first subpixel (SP1), and the connection structure (CP1) in the first subpixel (SP1) is insulated from the reflection plate (RF) and overlaps the reflection plate (RF). [12] The display device (800) according to claim 3, further comprising: a plurality of light-emitting diodes (LEDs) comprising a first light-emitting diode (LED1) arranged in the first subpixel (SP1) and a shared light-emitting diode (LED') arranged in the shared subpixel (SP'), wherein the shared light-emitting diode (LED') is electrically connected to a transistor (DT) of the plurality of transistors (DT) arranged in the second subpixel (SP2), and the connection structure (CP2) in the second subpixel (SP2) is insulated from the reflection plate (RF) and overlaps the reflection plate (RF). [13] The display device (100, 300, 400, 500, 600, 700, 800) according to any one of claims 1 to 12, wherein a length of the plurality of connection structures (CP) is longer than a width of a subpixel of the plurality of subpixels (SP).

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