METHOD FOR MANUFACTURING A BUILDING ELEMENT

Abstract

A method for manufacturing a component includes steps for providing a surface formed by a material, arranging a mask structure on the surface, and performing a material removal process, whereby material is removed from the surface and deposited on the mask structure where it forms a structure.

Description

[0001] The present invention relates to a method for manufacturing a component.

[0002] Several methods for fabricating structures with dimensions in the micrometer and nanometer range are known. The variety of structure sizes and shapes made possible by these methods is limited.

[0003] One object of the present invention is to provide a method for manufacturing a component. This object is achieved by a method with the features of claim 1. Various embodiments are specified in the dependent claims.

[0004] A method for manufacturing a component includes steps for providing a surface formed by a material, arranging a mask structure on the surface, and performing a material removal process, whereby material is removed from the surface and deposited on the mask structure where it forms a structure.

[0005] This method can enable the fabrication of a small structure with a favorable shape. For example, the method can enable the fabrication of a pointed, wedge-shaped, or lamellar structure with dimensions in the micrometer or nanometer range.

[0006] In one variation of the process, this includes a further step to remove the mask structure. Advantageously, only the structure formed by the deposition of the material remains.

[0007] In one variation of the process, the material removal process is a plasma etching process or a sputtering process. Advantageously, in these processes, the removed material can adhere to the mask structure, where it forms the desired structure.

[0008] In one variant of the process, the material removal process takes place without chemical material removal. Advantageously, this ensures that a high proportion of the material removed by the process can adhere to the mask structure and form the desired structure.

[0009] In one variant of the process, the material removal process uses argon ions. Such a material removal process can be suitable, for example, for processing GaN.

[0010] In one variant of the process, the material is deposited onto the mask structure in at least a partially amorphous form. This allows the material forming the structure to exhibit advantageous properties.

[0011] In one variant of the process, providing the surface formed by the material includes steps for providing a substrate and for arranging the material on the substrate to form the surface. This advantageously allows the structure to be formed from a material that differs from the material of the substrate.

[0012] In one variation of the process, the material is deposited on a flank of the mask structure. This advantageously allows the production of structures that protrude from the surface or otherwise extend beyond the surface.

[0013] In one variant of the process, the structure comprises a plurality of individual structures. This can be achieved, for example, through a suitable design of the mask structure. This advantageously allows for the simultaneous production of several individual structures, making the process quick and cost-effective. Furthermore, precise alignment of the individual structures relative to each other can be achieved.

[0014] In one variation of the process, the structure is wedge-shaped, needle-shaped, or frame-shaped. This advantageously opens up diverse application possibilities for the structure. If the structure comprises several individual structures, each of the individual structures can be designed in this way.

[0015] In one variation of the process, the structure forms a beam splitter. Advantageously, this allows the beam splitter to be designed with very compact external dimensions.

[0016] In one variation of the process, the material removal process simultaneously forms a finned waveguide for the laser structure. Advantageously, this allows the finned waveguide of the laser structure and the structure formed by the material deposition to be precisely aligned. Furthermore, this makes the process particularly simple, fast, and cost-effective.

[0017] In one variant of the process, the structure forms a point for the mechanical processing of a workpiece, in particular for scoring or indenting the workpiece. Scoring the workpiece can, for example, serve as a basis for subsequent breaking of the workpiece along a score line formed by the scoring. Indenting can, for example, enable a hardness measurement.

[0018] In one variation of the method, the structure forms a measuring tip for force measurement. Advantageously, the small external dimensions of the structure enable force measurement on very small workpieces or components.

[0019] In one variation of the method, the structure forms a measuring probe for a scanning probe microscope. Advantageously, the small size of the structure enables measurements with high spatial resolution.

[0020] In one variant of the process, the structure forms a contact point for electrical contact. The small external dimensions of the structure advantageously enable electrical contact even with small components.

[0021] In one variant of the process, the structure forms a gripper tip for carrying out a pick-and-place procedure. This can be made possible, for example, by the structure's ability to be statically charged.

[0022] In one variant of the method, the structure forms an output or input coupling structure of an optoelectronic component. Advantageously, this can increase the optical efficiency of the optoelectronic component.

[0023] In one variation of the method, the structure acts as an alignment aid. This can, for example, make it possible to align a component with such an alignment aid to another component with a corresponding alignment aid.

[0024] The properties, features, and advantages of this invention described above, as well as the manner in which they are achieved, will become clearer and more readily understandable in connection with the following description of the exemplary embodiments, which are explained in more detail in conjunction with the drawings. These drawings are shown in schematic representations. Fig. 1 a surface formed by a material with a mask structure arranged on it; Fig. 2 the surface and the mask structure during the execution of a material removal process; Fig. 3 a structure formed on the surface after removal of the mask structure; Fig. 4 another variant of the mask structure with an attached structure; Fig. 5 the structure after removal of the mask structure; Fig. 6 a view of another mask structure with an attached structure; Fig. 7 a view of another mask structure with an attached structure; Fig. 8 a top view of a structure forming a beam splitter; Fig. 9 a side view of a structure formed as a point; Fig. 10 a side view of a structure forming an input or output structure; Fig. 11. Supervision of a first variant of the coupling-out or coupling structure; Fig. 12. Supervision of a second variant of the coupling structure; Fig. 13 a sectional side view of two building elements with structures forming adjustment aids; and Fig. 14 the components after assembly and adjustment.

[0025] Fig. Figure 1 shows a schematic sectioned side view of a surface 110 formed by a material 100. In the Fig. In the example shown, surface 110 is formed by a layer 130 of material 100 arranged on a substrate 120. The substrate 120 itself can optionally be a different material than material 100 in this example. The layer 130 can be shown in one of the representations of the Fig. 1. A process step that had been previously applied to substrate 120 must have been arranged.

[0026] In an alternative variant, the substrate 120 itself contains the material 100, and the surface 110 is formed by the substrate 120 itself. In this variant, it is unnecessary to arrange the layer 130 of material 100 on the substrate 120.

[0027] The surface 110 formed by the material 100 can, for example, be flat at least in sections.

[0028] Material 100 can, for example, be a semiconductor material, such as GaN, a metal, or a dielectric.

[0029] A mask structure 200 has been arranged on surface 110. The mask structure 200 may, for example, be made of a photostructurable lacquer. The mask structure 200 covers part of surface 110, while another part of surface 110 is not covered by the mask structure 200.

[0030] Fig. 2 shows a schematic cutaway side view of one of the representations of the Fig. 1. Subsequent processing stage during the execution of a material removal process. The material removal process can be, for example, a plasma etching process or a sputtering process. In the material removal process, a material-removing medium 250 acts on the surface 110, causing material 100 to be removed from the surface 110. At least part of the removed material 100 is deposited on the mask structure 200, where it forms a structure 300.

[0031] It is advantageous if the material removal process predominantly or exclusively involves the physical removal of material 100 from the surface 110 and occurs with only minimal or even no chemical material removal. The material removal medium 250 used in the material removal process may, for example, contain ions, in particular argon ions.

[0032] The material removal process dissolves the material 100 on the parts of the surface 110 not covered by the mask structure 200. This creates a depression 140 on these parts of the surface 110, so that the uncovered parts of the surface 110 are deeper than the parts of the surface 110 covered by the mask structure 200.

[0033] At least some of the material 100 released by the material removal process is deposited on the mask structure 200. In the Fig. In the example shown, the deposition occurs on a lateral flank 210 of the mask structure 200. After the formation of the depression 140, the deposition of the dissolved material 100 also occurs on a flank 150 between a depressiond and a non-depressiond part of the surface 110 below the flank 210 of the mask structure 200.

[0034] The material 100 forming structure 300 can be deposited on the mask structure 200 in at least partially amorphous form. This also applies if the material 100 was previously present on the surface 110 in crystalline or semi-crystalline form.

[0035] The shape and dimensions of the structure 300 formed by the deposition of material 100 can be influenced by the design of the mask structure 200 and by the process parameters of the material removal process. Some or all dimensions of the structure 300 can, for example, be in the micrometer or nanometer range.

[0036] The height of structure 300, measured perpendicular to surface 110, can be influenced by the thickness of the mask structure 200, also measured perpendicular to surface 110. A thicker mask structure 200 allows for the production of a taller structure 300.

[0037] The higher the process pressure during the material removal process, the shorter the mean free path of the material 100 removed from the surface 110. With a shorter mean free path, the material 100 is deposited closer to the surface 110. With a lower process pressure and a correspondingly longer mean free path, the material 100 can also be deposited on parts of the mask structure 200 further away from the surface 110, and the resulting structure 300 has a greater height.

[0038] Since the rate of material deposition (reposition rate) decreases with increasing distance from the surface 110, the structure 300 can taper to a point on its side facing away from the surface 110. This can result in the structure 300 becoming, for example, wedge-shaped or needle-shaped. This effect can be further enhanced by the fact that some of the material 100 already deposited in the structure 300 is subsequently removed again during the material removal process.

[0039] Fig. Figure 3 shows a schematic cutaway side view of one of the representations of the Fig. 2. Subsequent processing stage. After the material removal process was carried out, the mask structure 200 was removed. This could have been done, for example, by chemical paint stripping.

[0040] The structure 300, previously attached to the mask structure 200, remains attached to the surface 110. The structure 300 has a base 310 at which it is connected to the surface 110. On its side facing away from the surface 110, the structure 300 has a tip 320. Its side, previously facing the flank 210 of the mask structure 200 and the flank 150, forms a contact side 330. Opposite this, the structure 300 has a free side 340.

[0041] Fig. Figure 3 shows a first example of a component 10.

[0042] In some variants of the described manufacturing process, it may be advantageous to refrain from removing the mask structure 200, so that it remains in the finished component 10.

[0043] Fig. Figure 4 shows a schematic sectioned side view of an alternative design of the mask structure 200 after the material removal process, but before the removal of the mask structure 200. In this example, the mask structure 200 has a projection 220. This formed the structure 300 attached to the mask structure 200 with an angled section 350.

[0044] Fig. Figure 5 shows the structure 300 of this variant of the component 10 after the removal of the mask structure 200.

[0045] Further variations of the structure 300 can be produced by using other designs of the mask structure 200.

[0046] Fig. Figure 6 shows a top view of the surface 110 of another variant of the component 10 after the material removal process and before the removal of the mask structure 200. In this variant, the mask structure 200 is ring-shaped or frame-shaped and has two flanks 210, an inner flank 210 and an outer flank 210. Parts of the structure 300 have been formed on both flanks 210, so that the structure 300 comprises two individual structures 305, each frame-shaped and arranged concentrically to each other.

[0047] Other geometric designs of the mask structure 200 in the plane parallel to the surface 110 allow the production of further shape variants of the structure 300.

[0048] Fig. Figure 7 shows a top view of the surface 110 of another variant of the component 10 after the material removal process and before the removal of the mask structure 200. In this variant, the mask structure 200 comprises two separate individual structures 205. Individual structures 305 of the structure 300 have been formed on the flanks 210 of both individual structures 205. Each of the individual structures 305 of the structure 300 is frame-shaped.

[0049] By using a different number of individual structures 205 of the mask structure 200 and by using a different geometric design of these individual structures 205, the structure 300 can be formed with a different number of individual structures 305 and with further shape variants.

[0050] Fig. Figure 8 shows a top view of the substrate 120 and the surface 110 in another variant of the component 10. In this variant, the surface 110 of the material 100 is formed by a layer 130 of the material 100 arranged section by section on the substrate 120. On this surface 110, the structure 300 with two individual structures 305 has been formed in the manner already described. The mask structure 200 has already been removed.

[0051] During the production of the in Fig. In the variant of component 10 shown in Figure 8, a ribbed waveguide 410 of a laser structure 400 was formed simultaneously with structure 300 during the material removal process. Component 10 is shown in Figure 8. Fig. The variant shown in 8 thus represents a laser component 10, 11.

[0052] The structure 300 forms a beam splitter 420. The beam splitter 420 is configured to split a laser beam 430 emitted by the laser structure 400 into a plurality of partial beams 435. For this purpose, each individual structure 305 of the structure 300 can split a beam incident on it into two partial beams 435 by partial transmission and partial reflection. The individual structures 305 of the structure 300 form semitransparent mirrors for this purpose. The material 100 forming the structure 300 is partially transparent to the light of the laser beam 430 emitted by the laser structure 400.

[0053] Because the ribbed waveguide 410 of the laser structure 400 and the structure 300 in the Fig. Since the variant of component 10 shown in Figure 8 can be manufactured in a single operation, a particularly precise alignment of the laser structure 400 and the beam splitter 420 formed by the structure 300 relative to each other can advantageously be achieved.

[0054] Fig. Figure 9 shows a schematic cutaway side view of another variant of the component 10. In this variant of the component 10, the structure 300 is pointed or needle-shaped and can be used as a tool for machining, manipulating or examining an element 600.

[0055] In one variant, the structure 300 forms a point 500 for the mechanical processing of the element 600. The element 600 can be, for example, a workpiece, such as a workpiece made of a dielectric material, a semiconductor wafer, or another workpiece. The mechanical processing of the element 600 can, for example, include scoring the element 600, thereby creating a notch that can then serve, for example, as a starting point for breaking the element 600. The mechanical processing of the element 600 can also include indenting the element 600, whereby holes or depressions are created in the element 600. The shape of these holes or depressions can be determined by the shape of the structure 300.

[0056] In another version of the in Fig. In the component 10 shown in Figure 9, structure 300 forms a measuring tip 510 with which a force measurement can be performed. The force measurement can be carried out by bringing the structure 300 forming the measuring tip 510 close to the element 600, which in this case could be, for example, a freely suspended semiconductor chip or another component to be examined. The force measurement can be used, for example, for process control, such as during a component transfer.

[0057] In another variant of the in Fig. In the component 10 shown, structure 300 can form a measuring probe 520 for a scanning probe microscope, for example for an atomic force microscope. It is advantageous if the tip 320 of structure 300 is as thin as possible.

[0058] In another variant of the in Fig. In the component 10 shown in Figure 9, the structure 300 forms a contact point 530 for electrically contacting the element 600. This is possible if the material 100 forming the structure 300 is electrically conductive. In this case, the element 600 can be an electrically contactable component. The electrical contact can be made, for example, for testing purposes.

[0059] In another variant of the in Fig. In the component 10 shown in Figure 9, the structure 300 forms a gripper tip 540 for performing a pick-and-place process. In this variant, the structure 300 can be statically charged and used to lift, move, and place semiconductor chips or other components. Alternatively, instead of statically charging the gripper tip 540, it can also interact with the components to be manipulated by means of a magnetic force or in another way.

[0060] Fig. Figure 10 shows a schematic cutaway side view of another variant of the optoelectronic component 10 after the material removal process and before the removal of the mask structure 200. In this variant, the component 10 is an optoelectronic component 10, 12.

[0061] In this variant, the substrate 120 has an active layer 710 and a mirror layer 720 and is configured to emit electromagnetic radiation at an emission side 730. The emission side 730 comprises the surface 110. The optoelectronic component 10, 12 can, for example, be a light-emitting diode (LED) component.

[0062] The mask structure 200 comprises several individual structures 205, on whose flanks 210 the structure 300 with several individual structures 305 has been formed.

[0063] After removal of the mask structure 200, the structure 300 forms an output coupling structure 550, which facilitates the output of the electromagnetic radiation generated in the optoelectronic device 10, 12 from the optoelectronic device 12. The material 100 from which the structure 300 is formed can advantageously have a similar or identical refractive index to the rest of the substrate 120 of the optoelectronic device 10, 12.

[0064] Structure 300 can be used in the Fig. The optoelectronic component 10, 12 shown in Figure 10 can additionally or alternatively also serve as a lens structure and influence or shape the characteristics of the electromagnetic radiation emitted by the optoelectronic component 10, 12 at the emission side 730. Fig. Figure 11 shows a schematic representation of a first variant of structure 300 in plan view. In this variant, the individual structures 305 of structure 300 are formed as parallel stripes. Fig. Figure 12 shows a view of a second variant of structure 300 of the in Fig. The optoelectronic device 10, 12 shown in Figure 10. In this variant, the individual structures 305 of structure 300 are configured as concentric rings. In both variants, structure 300 forms a microfresnel lens.

[0065] In another variant of the in Fig. In the optoelectronic component 10, 12 shown in Figure 10, it is designed not for emission but for detection of light. In this variant, the structure 300 forms a coupling structure 550 that facilitates the coupling of light incident on the optoelectronic component 10, 12 into the optoelectronic component 10, 12.

[0066] In other variations of the in Fig. In the optoelectronic component 10, 12 shown, the mask structure 200 is not removed, but remains on the finished component 10, 12.

[0067] Fig. Figure 13 shows a schematic cutaway side view of another variant of the component 10. In this variant of the component 10, the structure 300 forms an adjustment aid 560. The component 10 can be, for example, a laser diode or another electronic component.

[0068] In the Fig. In the example shown in Figure 13, the component 10 is designed to be arranged on another component 10, 13. This other component 10, 13 also has a structure 300 formed in the manner described above, which likewise forms an adjustment aid 560.

[0069] The structures 300 forming the adjustment aids 560 of component 10 and the further component 10, 13 each comprise several individual structures 305, which are arranged and shaped such that the component 10 and the further component 10, 13 are aligned with each other when joined by an interlocking of the two structures 300. This can be achieved in particular by the inclined free sides 340 of the structures 300, which enable precise relative positioning when the component 10 and the further component 10, 13 are joined. This is in Fig. Figure 14 shows a schematic representation. A solder 750 was applied to the surfaces 110 of component 10 and of the further component 10, 13 before assembly, permanently bonding the assembled components 10, 13 together. An adhesive, BCB, or another bonding material could also be used instead of the solder 750.

[0070] In a simplified version, only component 10 has the adjustment aid 560 formed by structure 300. In this version, component 10 is mounted on a carrier that itself does not have an adjustment aid but is, for example, provided with a solder layer. When component 10 is mounted on the carrier, the adjustment aid 560 formed by structure 300 is pressed into the solder layer until it reaches its stop. This creates a precisely defined distance between component 10 and the carrier, determined by the height of structure 300. In this version of component 10, the adjustment aid 560 formed by structure 300 thus acts as a spacer.

[0071] The invention has been illustrated and described in more detail with reference to preferred embodiments. However, the invention is not limited to the disclosed examples. Other variations can be derived by those skilled in the art. REFERENCE MARK LIST 10 building elements 11 Laser component 12 optoelectronic component 13 further building elements 100 material 110 surface area 120 substrate 130 shifts 140 In-depth study 150 flank 200 mask structure 205 Individual structure 210 flank 220 cantilever 250 material-removing medium 300 structure 305 Individual structure 310 Base 320 peak 330 Contact page 340 free pages 350 angled section 400 laser structure 410 ribbed waveguides 420 beam splitters 430 laser beam 435 partial beam 500 tips for mechanical processing 510 measuring tip 520 measuring probe 530 contact tip 540 Gripping tip 550 coupling structure 560 Adjustment aid 600 elements 710 active shift 720 mirror coating 730 Emissions side 750 Lot

Claims

Method for producing a component (10) comprising the following steps:- Providing a surface (110) formed by a material (100);- Arranging a mask structure (200) on the surface (110);- Performing a material removal process wherein material (100) is removed from the surface (110) and deposited on the mask structure (200) where it forms a structure (300). Method according to claim 1, with the following further step: - removal of the mask structure (200) Method according to one of the preceding claims, wherein the material removal process is a plasma etching process or a sputtering process. Method according to one of the preceding claims, wherein the material removal process is carried out without chemical material removal. Method according to one of the preceding claims, wherein the material removal process uses argon ions. Method according to one of the preceding claims, wherein the material (100) comprises a semiconductor material, in particular GaN. Method according to one of the preceding claims, wherein the material (100) is deposited on the mask structure (200) in at least partially amorphous form. Method according to one of the preceding claims, wherein providing the surface (110) formed by the material (100) comprises the following steps: - providing a substrate (120); - arranging the material (100) on the substrate (120) to form the surface (110). Method according to one of the preceding claims, wherein the material (100) is deposited on a flank (210) of the mask structure (200). Method according to one of the preceding claims, wherein the structure (300) comprises a plurality of individual structures (305). Method according to one of the preceding claims, wherein the structure (300) is wedge-shaped, needle-shaped or frame-shaped. Method according to one of the preceding claims, wherein the structure (300) forms a beam splitter (420). Method according to one of the preceding claims, wherein the material removal process simultaneously forms a ribbed waveguide (410) of a laser structure (400) along with the formation of the structure (300). Method according to any one of claims 1 to 11, wherein the structure (300) forms a tip (500) for the mechanical processing of a workpiece (600), in particular for scoring or indenting the workpiece (600). Method according to any one of claims 1 to 11, wherein the structure (300) forms a measuring tip (510) for force measurement. Method according to any one of claims 1 to 11, wherein the structure (300) forms a measuring probe (520) for a scanning probe microscope. Method according to any one of claims 1 to 11, wherein the structure (300) forms a contact tip (530) for electrical contacting. Method according to any one of claims 1 to 11, wherein the structure (300) forms a gripping tip (540) for carrying out a pick and place process. Method according to any one of claims 1 to 11, wherein the structure (300) forms an out- or in-coupling structure (550) of an optoelectronic device (12). Method according to any one of claims 1 to 11, wherein the structure (300) forms an adjustment aid (560).

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