DISPLAY DEVICE

Abstract

Embodiments of the disclosure relate to a display device (100) and, more particularly, may provide a display device (100) capable of effectively preventing external moisture from entering a display area (DA) through a camera hole (CH) by the display area (DA) having a light-emitting element (ED), the camera hole (CH) being positioned in the display area (DA), and a first non-display area (NDA1) positioned between the display area (DA) and the camera hole (CH) and having a moisture prevention structure (MPS) positioned in the first non-display area (NDA1).

Description

CROSS REFERENCE TO RELATED APPLICATIONThis application claims priority to Korean Patent Application No. 10-2023-0175828 filed on Dec. 6, 2023 and Korean Patent Application No. 10-2024-0158859 filed on Nov. 11, 2024.BACKGROUNDTechnical FieldEmbodiments of the disclosure relate to display devices.DESCRIPTION OF THE RELATED ARTWith the technology development, the display device can provide a capturing function and various sensing functions in addition to the image display function. To this end, the display device includes an optoelectronic device (also referred to as a light receiving device or sensor), such as a camera and a detection sensor.Since the optical electronic device receives light from the front of the display device, it should be installed at a location where light reception is easy. Accordingly, the camera (camera lens) and the detection sensor may be exposed to the front of the display device. Thus, the bezel of the display panel is widened or a recess is formed in the display area of the display panel, and a camera or a detection sensor is installed therein.When the bezel is widened or a recess is formed in the front of the display panel, the display area for displaying images on the display panel may decrease.BRIEF EXPLANATIONIn the field of display technology, techniques are being studied to equip optical electronic devices such as cameras and detection sensors without reducing the display area of the display panel. Accordingly, the inventors of the disclosure have provided embodiments of a display device in which an optical electronic device is capable of normally receiving light even when it is disposed within the display area and not in the surrounding area around the display area. However, in such a display device, the portion where the optical electronic device is disposed is susceptible to the entry of moisture from the outside. Accordingly, the inventors of the disclosure have further provided various embodiments of a display device capable of preventing the ingress of moisture from the outside of the display device while the optical electronic device is positioned within the display area.Embodiments of the disclosure may provide a display device including a camera hole positioned in the display region and a first non-display region positioned between the display region and the camera hole and including a moisture preventing structure disposed in the first non-display region.Embodiments of the disclosure may provide a display device capable of effectively preventing entry of moisture from the outside of the display device by having a moisture prevention structure. Embodiments of the present disclosure may provide a display device according to the independent claims. Further embodiments are described in the dependent claims.Embodiments of the disclosure may provide a display device including a substrate, a bank, an interruption portion, a plurality of insulating films, and a moisture prevention structure. The substrate may include a display area, a camera hole, and a first non-display area. A plurality of light emitting elements including a light emitting layer may be disposed in the display region. The camera hole may be positioned in the display area. The first non-display region may be positioned between the display region and the camera hole. The bank may be positioned in the first non-display area. The cut-off portion may be positioned in the first non-display area. The plurality of insulating films may be disposed on the substrate and below the plurality of light emitting elements. The moisture preventing structure may be disposed in the first non-display region. The moisture preventing structure may include an undercut portion of one of the plurality of insulating films.Embodiments of the disclosure may provide a display device including a display region and a non-display region adjacent to the display region, a camera hole adjacent to the non-display region, the camera hole being spaced apart from the display region in a plan view, a light emitting element disposed to overlap with the display region in a plan view, a bank structure in the non-display region, and a first moisture preventing structure adjacent to the bank structure, the first moisture preventing structure including a plurality of metal layers.In the display device according to the embodiments of the disclosure, the display device may further include an auxiliary metal layer disposed among the plurality of metal layers of the first moisture prevention structure.According to embodiments of the disclosure, a display device capable of preventing defects due to entry of moisture from the outside of the display device may be provided by having a moisture prevention structure disposed in a first non-display region.According to the embodiments of the disclosure, a display device capable of low-power operation can be provided by preventing defects in the light emitting elements or shortening of the lifetime of the light emitting elements due to the ingress of moisture from outside the display device.DESCRIPTION OF THE VARIOUS VIEWS OF THE DRAWINGSThe above and other objects, features and advantages of the disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. 1 is an exemplary plan view showing a display device according to embodiments of the disclosure; FIG. 2 is an exemplary view showing a system configuration of a display device according to the embodiments of the disclosure; FIG. 3 is an exemplary configuration view of a display device and an equivalent circuit diagram of a subpixel according to embodiments of the disclosure; FIG. 4 is an enlarged view of the region A of FIG. 1 ; FIGS. 5, 6, and 7 are exemplary cross-sectional views illustrating a display device according to embodiments of the disclosure; FIGS. 8 and 9 are exemplary cross-sectional views illustrating a moisture preventing structure of a display device as illustrated in FIGS. 5, 6, and 7 ; FIGS. 10 and 11 are exemplary cross-sectional views illustrating a display device according to embodiments of the disclosure; FIG. 12 is an exemplary cross-sectional view showing a moisture preventing structure of a display device as illustrated in FIGS. 10 and 11 ; FIG. 13 is an exemplary cross-sectional view illustrating a display device according to embodiments of the disclosure; FIG. 14 is an exemplary cross-sectional view showing the moisture preventing structure of FIG. 13 ; FIGS. 15, 16, and 17 are exemplary cross-sectional views illustrating a display device according to embodiments of the disclosure; FIGS. 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, and 29 are exemplary cross-sectional views showing a moisture preventing structure of a display device as illustrated in FIGS. 15, 16, and 17 ; FIG. 30 is an exemplary cross-sectional view illustrating a display device according to exemplary embodiments of the disclosure; and FIGS. 31, 32, 33, 34, 35 and 36 are exemplary cross-sectional views showing a moisture preventing structure of a display device as illustrated in FIG. 30.DETAILED DESCRIPTIONIn the following description of examples or embodiments of the disclosure, reference is made to the accompanying drawings, in which is shown by way of illustration specific examples or embodiments that may be implemented, and in which the same reference numerals and characters may be used to designate the same or similar components, even when illustrated in different accompanying drawings. Further, in the following description of examples or embodiments of the disclosure, detailed descriptions of known functions and components will be omitted when it is determined that the description may make the subject matter rather unclear in some embodiments of the disclosure. The terms such as "comprising", "having", "containing", "forming", and "made of" used herein are generally intended to allow the addition of other components unless the terms are used with the term "only". The singular form used herein includes the plural form unless the context clearly indicates otherwise.Terms such as "first...", "second...", "A", "B", "(A)", or "(B)" may be used herein to describe elements of the disclosure. Each of these terms is not used to define the spirit, order, sequence, or number of elements, etc., but is merely for distinguishing the corresponding element from other elements.When it is mentioned that a first element is "connected or coupled to", "contacts or overlaps", etc., a second element is "connected or coupled to" or "directly contact or overlap" or the first element may be "connected or coupled to" or "directly contact or overlap", but a third element may be "inserted" between the first and second elements, or the first and second elements may be "connected or coupled to", "contact or overlap", etc., via a fourth element. Here, the second element may be included in at least one of two or more elements that are "connected or coupled to each other", "contact or overlap", etc.When time-related terms such as "after", "subsequent", "next", "before", and the like are used to describe processes or operations of elements or configurations or operations or steps in operation, processing, and manufacturing methods, these terms may not be used to describe successive or non-successive processes or operations unless the term "directly" or "directly" is used together.The shapes, sizes, dimensions (e.g., length, width, height, thickness, radius, diameter, area, etc.), ratios, angles, numbers of elements, and the like illustrated in the accompanying drawings for describing the embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto.A dimension including the size and thickness of each component illustrated in the drawings is illustrated for convenience, and the present disclosure is not limited to the size and thickness of the illustrated component, but it is to be noted that the relative dimensions including the relative size, location, and thickness of the components illustrated in various drawings presented herein are part of the present disclosure.Moreover, when considering dimensions, relative sizes, etc., it is to be appreciated that numerical values for elements or features or corresponding information (e.g., level, range, etc.) include a tolerance or range of errors that may be caused by various factors (e.g., process factors, internal or external influences, noise, etc.), even if no corresponding description is given. Furthermore, the term "permitted / intended" has all meanings of the term "can".Hereinafter, various embodiments of the disclosure will be described in detail with reference to the accompanying drawings.FIG. 1 is a plan view showing a display device 100 according to the embodiments of the disclosure.Referring to FIG. 1, a display device 100 may include a display area DA and a non-display area NDA. The non-display area NDA may include a second non-display area NDA 2 surrounding the display area DA. The display area DA is an area that displays an image, and a plurality of light emitting elements may be disposed in the display area DA. The second non-display area NDA 2 may be a bezel area that is outside the display area DA of the display device 100. In the second non-display area NDA 2, driving circuits such as data driving circuits and gate driving circuits for driving a plurality of light emitting elements arranged in the display area DA and signal lines such as data lines and gate lines may be positioned.The display device 100 may include a display area DA, a camera hole CH disposed in the display area DA, and a first non-display area NDA 1 disposed between the display area DA and the camera hole CH. In the camera hole CH, various optical electronic devices provided in the display device 100 may be positioned. For example, a camera may be positioned below the substrate of the display device 100, and may be positioned to overlap the camera hole CH in a plan view. In the display device 100 according to the embodiments of the disclosure, the area of the second non-display area NDA 2, which is the bezel area, may be reduced and the display area DA may be enlarged or maximized because the camera hole CH is positioned in the display area DA.The camera hole CH may be a single hole as illustrated in FIG. 1, but without limitation, the camera hole CH may be arranged in various ways. For example, one or two holes may be disposed within the display area DA, and a camera may be disposed in the first hole, and a distance sensor, a face detection sensor, or another camera may be disposed in the second hole.The first non-display area NDA 1 may surround the camera hole CH. For example, the first non-display area NDA 1 may be disposed in the edge portion of the camera hole CH and surround all or a portion of the edge portion of the camera hole CH. In the first non-display area NDA 1, signal lines for transmitting signals to the light emitting elements disposed in the display area DA may be disposed. The first non-display area NDA 1 may be referred to as a bezel area of the camera hole CH, and may be referred to as a variable bezel area, for example.FIG. 2 is a view showing a system configuration of a display device 100 according to the embodiments of the disclosure. What is identical or similar to that described with reference to FIG. 1 is omitted or briefly described in the following description.Referring to FIG. 2, the display device 100 may include a display panel 110 and a driving circuit as components for displaying an image.The display driving circuits are circuits for driving the display panel 110, and may include a data driving circuit DDC, a gate driving circuit GDC, and a display control device D-CTR.The display panel 110 may include a display area DA in which an image is displayed and a second non-display area NDA 2 in which an image is not displayed. The second non-display area NDA 2 may be an outer area of the display area DA and may be referred to as a bezel area. All or part of the second non-display area NDA 2 may be an area visible from the front side of the display device 100, or an area bent and not visible from the front side of the display device 100.The display panel 110 may include a camera hole CH positioned in the display area DA and a first non-display area NDA 1 disposed between the display area DA and the camera hole CH.The display panel 110 may include a substrate SUB and a plurality of sub-pixels SP disposed on the substrate SUB. The display panel 110 may further include various kinds of signal lines for driving the plurality of subpixels SP.The display device 100 according to the embodiments of the disclosure may be a liquid crystal display device or a self-emitting display device in which the display panel 110 itself emits light. When the display device 100 according to the embodiments of the disclosure is a self-emitting display device, each of the plurality of subpixels SP may include a light emitting element. For example, the display device 100 according to embodiments of the disclosure may be an organic light emitting diode display in which the light emitting element is implemented as an organic light emitting diode (OLED). As another example, the display device 100 according to the embodiments of the disclosure may be an inorganic light emitting display device in which the light emitting element is implemented as an inorganic material-based light emitting diode. As another example, the display device 100 according to the embodiments of the disclosure may be a quantum dot display device in which the light emitting element is implemented as a quantum dot that is a self-emitting semiconductor crystal.The structure of each of the plurality of subpixels SP may vary depending on the type of the display device 100. For example, when the display device 100 is a self-emitting display device in which the subpixels SP independently emit light, each subpixel SP may include a light emitting element that independently emits light, one or more transistors, and one or more capacitors.For example, various types of signal lines may include a plurality of data lines DL for transmitting data signals (also referred to as data voltages or image signals) and a plurality of gate lines GL for transmitting gate signals (also referred to as scan signals).The plurality of data lines DL and the plurality of gate lines GL may cross each other. Each of the plurality of data lines DL may be arranged extending in a first direction. Each of the plurality of gate lines GL may be arranged extending in a second direction. In this case, the first direction can be a column direction and the second direction can be a row direction. The first direction may be the row direction and the second direction may be the column direction.The data driving circuit DDC is a circuit for driving the plurality of data lines DL, and may output data signals to the plurality of data lines DL. The gate drive circuit GDC is a circuit for driving the plurality of gate lines GL, and may output gate signals to the plurality of gate lines GL.The display control device D-CTR is a device for controlling the data line driving circuit DDC and the gate line driving circuit GDC, and can control the driving timings for the plurality of data lines DL and the driving timings for the plurality of gate lines GL.The display control device D-CTR may provide a data driving control signal DCS to the data driving circuit DDC to control the data driving circuit GDC, and may provide a gate driving control signal GCS to the gate driving circuit GDC to control the gate driving circuit GDC.The display controller D-CTR may receive input image data from the host system H-SYS and provide digital image data to the data driving circuit DDC based on the input image data.The data driving circuit DDC may receive digital image data from the display control device D-CTR and convert the received digital image data into analog data signals and output the analog data signals to the plurality of lines DL.The gate driving circuit GDC may receive a first gate voltage corresponding to an on-level voltage and a second gate voltage corresponding to an off-level voltage together with various gate driving control signals GCS, generate gate signals, and provide the generated gate signals to the plurality of gate lines GL.For example, the data driving circuit DDC may be connected to the display panel 110 by a TAB (Tape Automated Bonding) method, or may be connected to a bonding pad of the display panel 110 by a COG (Chip on Glass) or COP (Chip on Panel) method, or may be implemented by a COF (Chip on Film) method, and may be connected to the display panel 110.The gate driving circuit GDC may be connected to the display panel 110 by a TAB (Tape Automated Bonding) method, or connected to a bonding pad of the self-emitting display panel 110 by a COG or COP (Chip On Panel) method, or connected to the display panel 110 according to a COF method. The gate driving circuit GDC may be formed in a GIP (Gate-in-Panel) type in the second non-display area NDA 2 of the display panel 110. The gate driving circuit GDC may be disposed on the substrate or connected to the substrate. In other words, the GIP-type gate driving circuit GDC may be disposed in the second non-display region NDA 2 of the substrate. The gate driving circuit GDC, which is of the COG type (chip-on-glass) or of the COF type (chip-on-film), may be connected to the substrate.Meanwhile, at least one of the data driving circuit DDC and the gate driving circuit GDC may be disposed in the display area DA of the display panel 110. For example, at least one of the data driving circuit DDC and the gate driving circuit GDC may be arranged so as not to overlap the subpixels SP or to overlap all or some of the subpixels SP.The data driving circuit DDC may be connected to one side (e.g., a top or bottom side) of the display panel 110. Depending on the driving scheme or the panel design scheme, the data driving circuit DDC may be connected to both sides (e.g., top and bottom) of the display panel 110 or to two or more of the four sides of the display panel 110.The gate driving circuit GDC may be connected to one side (e.g., a left or right side) of the display panel 110. Depending on the driving scheme or the panel design scheme, the gate driving circuit GDC may be connected to both sides (e.g., the left and right sides) of the display panel 110 or to two or more of the four sides of the display panel 110.The display control device D-CTR may be implemented as a separate component from the data driving circuit DDC, or the display control device D-CTR and the data driving circuit DDC may be integrated into an integrated circuit (IC).The display control device D-CTR may be a driving timing control device used in the typical display technique, a control device that can perform other control functions besides the functions of the driving timing control device, or a control device other than the driving timing control device, or may be a circuit in the control device. The display control device D-CTR may be implemented in the form of various circuits or electronic components, for example, an integrated circuit (IC), a field programmable gate array (FPGA), an application specific integrated circuit (ASIC), or a processor.The display control device D-CTR may be mounted on a printed circuit board or a flexible printed circuit board and electrically connected to the data driving circuit DDC and the gate driving circuit GDC via the printed circuit board or the flexible printed circuit board.The display control device D-CTR may transmit / receive signals to / from the data driving circuit DDC according to one or more predetermined interfaces. The predetermined interface may include, for example, a low voltage differential signaling (LVDS) interface, an embedded clock point-point interface (EPI) interface, and a serial peripheral interface (SPI) interface.In order to provide both a touch sensing function and an image display function, the display device 100 according to the embodiments of the disclosure may include a touch sensor and a touch sensing circuit that scans the touch sensor to detect whether a touch is made by a touch object such as a finger or a stylus, or the position of the touch.The touch sensing circuit may include a touch driving circuit TDC that drives and scans the touch sensor and generates and outputs touch sensing data, and a touch control device T-CTR that may sense the occurrence of a touch or the position of the touch using touch sensing data.The touch sensor may include a plurality of touch electrodes. The touch sensor may further include a plurality of lines for electrically connecting the plurality of touch electrodes and the touch driving circuit TDC.The touch sensor in the form of a touch panel may be located outside the display panel 110, or the touch sensor may be located inside the display panel 110. When the touch sensor in the form of a touch panel is located outside the display panel 110, the touch panel is referred to as an external type. When the touch sensor is of an external type, the touch panel and the display panel 110 may be separately manufactured or merged during an assembly process. The external type touch panel may include a touch panel substrate and a plurality of touch electrodes on the touch panel substrate.When the touch sensor is located inside the display panel 110, the touch sensor may be formed on the substrate SUB along with the signal lines and electrodes related to the driving of the display during the manufacturing process of the display panel 110.The touch driving circuit TDC may provide a touch driving signal to at least one of the plurality of touch electrodes and scan at least one of the plurality of touch electrodes to generate touch sensing data.The touch sensing circuit may perform the touch sensing in a self-capacitance sensing scheme or a mutual capacitance sensing scheme.When the touch sensing circuit performs the touch sensing in the self-capacitance sensing scheme, the touch sensing circuit may perform the touch sensing based on the capacitance between each touch electrode and the touch object (e.g., finger or stylus). According to the self-capacitance sensing scheme, each of the plurality of touch electrodes may serve as both a driving touch electrode and a sensing touch electrode. The touch driving circuit TDC may drive all or some of the plurality of touch electrodes and scan all or some of the plurality of touch electrodes.When the touch sensing circuit performs the touch sensing according to the mutual capacitance sensing scheme, the touch sensing circuit may perform the touch sensing based on the capacitance between the touch electrodes. According to the mutual capacitance sensing scheme, the plurality of touch electrodes are divided into driving touch electrodes and sensing touch electrodes. The touch driving circuit TDC may drive the driving touch electrodes and scan the sensing touch electrodes.The touch driving circuit TDC and the touch control device T-CTR included in the touch sensing circuit may be implemented as separate devices or as a single device. The touch driving circuit TDC and the data driving circuit DDC may be implemented as separate devices or as a single device.The display device 100 may further include a power supply circuit for supplying various kinds of power to the integrated circuit of the display driver and / or the touch sensing circuit.The display device 100 according to the embodiments of the disclosure may be a mobile terminal such as a smartphone or a tablet, or a monitor or a television (TV) in various sizes, without being limited thereto, and may be a display in various kinds and various sizes that can display information or images.FIG. 3 is a configuration view of a display device and an equivalent circuit diagram of a subpixel according to embodiments of the disclosure. What is identical or similar to those described with reference to FIGS. 1 and 2 will be omitted or briefly described in the following description.Referring to FIG. 3, a plurality of subpixels SP may be disposed in the display area DA of the display device. A plurality of subpixels SP may be disposed in the display area DA but not in the first non-display area and the camera hole.Each of the plurality of subpixels SP may include a light emitting element ED and a subpixel circuit unit configured to drive the light emitting element ED.The subpixel circuit unit may include a driving transistor T 1 for driving the light emitting element ED, a sensing transistor T 2 for transmitting the data voltage VDATA to the first node N 1 of the driving transistor T 1, and a storage capacitor Cst for maintaining a constant voltage during an image.The driving transistor T 1 may include a first node N 1 to which the data voltage may be applied, a second node N 2 electrically connected to the light emitting element ED, and a third node N 3 to which a driving voltage VDD is applied from a driving voltage line DVL. The first node N 1 in the driving transistor T 1 may be a gate node, the second node N 2 may be a source node or a drain node, and the third node N 3 may be the drain node or the source node. For convenience of description, an example in which the first node N 1 in the driving transistor T 1 is a gate node, the second node N 2 is a source node, and the third node N 3 is a drain node will be described below.The light emitting element ED may include an anode electrode AE, a light emitting layer EL, and a cathode electrode CE. The anode electrode AE may be a pixel electrode disposed in each subpixel SP and electrically connected to the second node N 2 of the driving transistor T 1 of each subpixel SP. The cathode electrode CE may be a common electrode disposed in the plurality of sub-pixels SP, and a base voltage VSS may be applied thereto.For example, the anode electrode AE may be a pixel electrode and the cathode electrode CE may be a common electrode. Conversely, the anode electrode AE may be a common electrode, and the cathode electrode CE may be a pixel electrode. Hereinafter, for convenience of description, it is assumed that the anode electrode AE is a pixel electrode and the cathode electrode CE is a common electrode.The light emitting element ED may have a predetermined emission range. The emission region of the light emitting element ED may be defined as a region where the anode electrode AE, the light emitting layer EL, and the cathode electrode CE overlap.The light emitting element ED may be, for example, an organic light emitting diode (OLED), an inorganic light emitting diode, or a quantum dot light emitting element. When the light emitting element ED is an organic light emitting diode, the light emitting layer EL of the light emitting element ED may include an organic light emitting layer EL including an organic material.The sensing transistor T 2 may be turned on and off by a gate signal SCAN, which is a gate signal, applied via the gate line GL, and electrically connected between the first node N 1 of the driving transistor T 1 and the data line DL.The storage capacitor Cst may be electrically connected between the first node N 1 and the second node N 2 of the driving transistor T 1.The subpixel circuit unit may have a 2T (transistor)1C (capacitor) structure including a total of two of the driving transistor T 1 and the sensing transistor T 2 and a capacitor Cst as illustrated in FIG. 3, and in some cases, each subpixel SP may further include one or more transistors or one or more capacitors.The capacitor Cst may be an external capacitor intentionally designed to be located outside the driving transistor T 1, but not a parasitic capacitor (e.g., Cgs or Cgd) which is an internal capacitor that may be present between the first node N 1 and the second node N 2 of the driving transistor T 1. Each of the driving transistor T 1 and the sensing transistor T 2 may be an n-type transistor or a p-type transistor.Since the circuit elements (in particular the light emitting element ED embodied as an organic light emitting diode (OLED) with an organic material) in each subpixel SP are susceptible to moisture or oxygen from the outside, an encapsulation layer ENCAP may be arranged on the display panel 110 to prevent the ingress of moisture or oxygen from the outside into the circuit elements (in particular the light emitting element ED). The encapsulation layer ENCAP may be disposed to cover the light emitting elements ED.FIG. 4 is an enlarged view of the area A of FIG. 1, the area A in FIG. 1 is an area in the display area DA, and may be an area including the camera hole CH and a peripheral area thereof. What is identical or similar to those described in Figs. 1 to 3 will be omitted or briefly described in the following description.Referring to FIG. 4, the camera hole CH may be disposed in the display area DA. For example, the camera hole CH may have the shape of an island positioned in the display area DA, and the display area DA may surround the camera hole CH.The first non-display area NDA 1 may surround the camera hole CH. The first non-display area NDA 1 may be positioned between the display area DA and the camera hole CH, for example. The first non-display area NDA 1 is a non-display area positioned in the display area DA, and may be a non-display area positioned around the camera hole CH.The bank DAM (also referred to as bank structure DAM) may be disposed in the first non-display area NDA 1. The bank structure DAM may refer to a structure for controlling the flow of one of a plurality of insulating films included in the display device. For example, the bank DAM may be a structure for controlling the flow of an organic insulating film disposed on the light emitting elements on the substrate. More specifically, the insulating film may be an organic layer that is a part of an encapsulation layer encapsulating the plurality of light emitting elements. FIG. 4 shows embodiments in which only one embankment DAM is present in the first non-display area NDA 1, but the disclosure is not limited thereto, and embodiments in which two or more embankments are positioned in the first non-display area NDA 1 also belong to the embodiments of the disclosure.The dam DAM may be positioned to surround the camera hole CH. For example, the dam DAM may have a closed curved shape completely surrounding the camera hole CH. Since the bank DAM is positioned so as to surround the camera hole CH, it is possible to effectively control the flow of the organic layer, which is a part of the encapsulation layer, at the boundary of the peripheral portion of the camera hole CH.The cut portion area STA may be positioned in the first non-display area NDA 1. The interrupt portion area STA may refer to an area in which a plurality of interrupt portions are arranged. The cut-off portion is a structure for preventing moisture from entering the display area DA from the outside through the camera hole CH, and may refer to a structure for blocking a moisture entering path by cutting the cathode electrode CE formed by completely depositing on the organic layer of the light emitting element and / or the substrate SUB.The cut-off portion area STA may include an inner cut-off portion area ISTA and an outer cut-off portion area OSTA. The internal cut-off portion area ISTA may be a cut-off portion area positioned inside the bank DAM with respect to the display area DA. The internal cut-off portion area ISTA may be an area in which a plurality of cut-off portion areas are positioned inside the bank DAM with respect to the display area DA. The outer cut portion area OSTA may be a cut portion area positioned outside the bank DAM with respect to the display area DA. The outer interrupt portion area OSTA may be an area in which a plurality of interrupt portion areas positioned outside the bank DAM are positioned with respect to the display area DA.The moisture prevention structure may be positioned in the cut-off portion area STA. Since the moisture preventing structure is positioned in the cut-off portion area STA, it is possible to effectively prevent external moisture from entering the light emitting element in the display area DA through the camera hole CH. The moisture preventing structure may be disposed in the outer cut-off portion area OSTA and / or the inner cut-off portion area ISTA. In the disclosure, the moisture preventing structure positioned in the outer cut-off portion area OSTA may be referred to as an outer moisture preventing structure, and the moisture preventing structure positioned in the inner cut-off portion area ISTA may be referred to as an inner moisture preventing structure.The region of the first non-display region NDA 1 surrounding the internal cut-off portion region ISTA and positioned adjacent to the display region DA may be referred to as a variable bezel region VBA. In the variable bezel area VBA, signal lines for transmitting signals to the plurality of light emitting elements disposed in the display area DA may be disposed.FIG. 5 is a cross-sectional view illustrating a display device according to embodiments of the disclosure. More specifically, FIG. 5 is a cross-sectional view of the portion A-B of FIG. 4, which is identical or similar to that described with reference to FIGS. 1 to 4, will be omitted or briefly described in the following description.Referring to FIG. 5, when viewed in a vertical structure, the display device may include a transistor forming part, a light emitting element forming part, and an encapsulating part.The transistor forming part may include a substrate SUB, a first buffer layer BUF 1 on the substrate SUB, and various transistors, a storage capacitor, and various electrodes or signal lines formed on the first buffer layer BUF.The substrate SUB may include an insulating material. The substrate SUB may be made of glass or plastic, for example. The substrate SUB may have a single-layer or multi-layer structure. The substrate SUB may have a multilayer structure, for example. The substrate SUB may include a first substrate SUB 1 and a second substrate SUB 2. An intermediate film IPD may be located between the first and second substrates SUB 1 and SUB 2. The first substrate SUB 1 and the second substrate SUB 2 may include the same material. For example, the first substrate SUB 1 and the second substrate SUB 2 may be polyimide (PI) substrates. The interlayer film IPD may be a single- or multilayer inorganic film of silicon nitride (SiNx) or silicon oxide (SiOx). Since the interlayer film IPD is disposed between the first substrate SUB 1 and the second substrate SUB 2, the intrusion of moisture components into the transistor through the underlying first substrate SUB 1 can be prevented, which increases the reliability of the display device.The first buffer layer BUF 1 may be a single-film or multi-film structure. When the first buffer layer BUF 1 is formed in a multi-film structure, the first buffer layer BUF 1 may include a multi-buffer layer MBUF and an active buffer layer ABUF.On the first buffer layer BUF 1, various transistors, a storage capacitor, and various electrodes or signal lines may be formed. For example, the transistors on the first buffer layer BUF 1 are formed of the same material and on the same layer. Alternatively, the transistors on the first buffer layer BUF 1 may be formed of different materials and arranged in different layers.A first active layer ACT 1 may be disposed on the first buffer layer BUF 1. The first active layer ACT 1 is a layer forming the transistor and includes a channel region overlapping the first gate electrode GAT 1, a first source terminal region positioned on one side of the channel region, and a first drain terminal region positioned on the other side. The first active layer ACT 1 may refer to the active layer of the transistor or a semiconductor layer of the same material. Accordingly, the first active layer ACT 1 may configure the transistor or other circuit element and a signal line.A first gate insulating film GI 1 may be disposed on the first active layer ACT 1. A first gate electrode GAT1 may be disposed on the first gate insulating film GI1. The first gate electrode GAT 1 may refer to the gate electrode of the transistor or a metal layer of the same material. Accordingly, the first gate electrode GAT 1 may form the transistor or other circuit element and a signal line. The first gate electrode GAT 1 may include a conductive material. For example, the first gate electrode GAT 1 may include, but is not limited to, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof. The first gate electrode GAT 1 may be formed of, for example, a Mo / Ti double layer.A first interlayer insulating film ILD 1 may be positioned on the first gate electrode GAT 1. The first interlayer insulating layer ILD 1 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or a plurality of layers thereof, but is not limited thereto.A second buffer layer BUF2 may be disposed on the first interlayer insulating film ILD1. The second buffer layer BUF 2 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or multiple layers thereof, but is not limited thereto.On the second buffer layer BUF 2, a second active layer ACT 2 may be positioned. The second active layer ACT 2 may be the active layer of the transistor or a semiconductor layer of the same material. Accordingly, the second active layer ACT 2 may configure the transistor or other circuit element and a signal line.On the second active layer ACT 2, a second gate insulating film GI 2 may be positioned. The second gate insulating layer GI 2 may be formed of a single layer of silicon nitride (SiNx) or silicon oxide (SiOx), or a plurality of layers thereof, but is not limited thereto.A second gate electrode GAT 2 may be positioned on the second gate insulating film GI 2. The second gate electrode GAT 2 may refer to the gate electrode of the transistor or a metal layer of the same material. Accordingly, the second gate electrode GAT 2 may form the transistor or other circuit element and a signal line. The second gate electrode GAT 2 may include a conductive material. For example, the second gate electrode GAT 2 may include, but is not limited to, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof. The second gate electrode GAT 2 may be formed of, for example, a Mo / Ti double layer.On the second gate electrode GAT 2, a second interlayer insulating film ILD 2 may be positioned. The first source-drain electrode SD 1 may be positioned on the second interlayer insulating film ILD 2. The first source-drain electrode SD 1 may refer to the source-drain electrode of the transistor or a metal layer of the same material. Accordingly, the first source-drain electrode SD 1 may form the transistor or other circuit element and a signal line. The first source-drain electrode SD 1 may include a conductive material. For example, the first source-drain electrode SD 1 may include, but is not limited to, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof. The first source-drain electrode SD 1 may be formed of, for example, a Ti / Al / Ti triple layer.A first planarization layer PLN 1 may be disposed on the first source-drain electrode SD 1.A second source-drain electrode SD 2 may be disposed on the first planarization layer PLN 1. The second source-drain electrode SD 2 may refer to an electrode electrically connecting the first source-drain electrode SD 1 and the light emitting element ED, or may refer to a metal layer formed of the same material. Accordingly, the second source-drain electrode SD 2 may be an electrode electrically connecting the transistor and the light emitting element, or may be another circuit element and a signal line. The second source-drain electrode SD 2 may include a conductive material. For example, the second source-drain electrode SD 2 may include, but is not limited to, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof. The second source-drain electrode SD 2 may be formed of, for example, a Ti / Al / Ti triple layer.Referring to FIG. 5, the storage capacitor Cst may be formed of a first capacitor electrode CAPE 1 and a second capacitor electrode CAPE 2. In some cases, the storage capacitor Cst may be formed by three or more capacitor electrodes, or may have a shape in which two or more capacitors are connected in parallel.Each of the first capacitor electrode CAPE 1 and the second capacitor electrode CAPE 2 may be disposed on different metal layers in the display panel 110. For example, the first capacitor electrode CAPE 1 may include the same first gate metal as the first gate electrode GAT 1 on the first gate insulating layer GI 1, and may be disposed in the first gate metal layer. For example, the second capacitor electrode CAPE 2 may include the same metal as the metal pattern TM on the first interlayer insulating layer ILD 1, and may be disposed in the metal pattern layer.Referring to FIG. 5, a metal pattern TM may be further included. The metal pattern TM may be disposed between the first interlayer insulating layer ILD 1 and the second buffer layer BUF 2, for example. For example, the metal pattern TM may include the same metal as the second capacitor electrode CAPE 2 on the first interlayer insulating layer ILD 1, and may be disposed in the metal pattern layer. The metal pattern TM may include a conductive material. For example, the metal pattern TM may include, but is not limited to, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof. The metal pattern TM may be formed of, for example, a single Mo layer, a single MoTi alloy, or a Mo / Ti double layer. The metal pattern TM may be disposed in the display area DA and / or the non-display area NDA. The metal pattern TM may be used as a shield metal.A second planarization layer PLN 2 may be positioned on the second source-drain electrode SD 2.An anode electrode AE may be positioned on the second planarization layer PLN 2. The anode electrode AE may be a pixel electrode. The anode electrode AE may form the light emitting element ED. Although not illustrated in FIG. 5, a cathode electrode CE may be disposed on the light emitting layer EL. In this example, the anode electrode AE may be a pixel electrode and the cathode electrode may be a common electrode. The cathode electrode, which is a common electrode, may be disposed over the entire display area DA.A bank BANK may be positioned on the anode electrode AE. The bank BANK may be disposed to cover a part of the anode electrode AE. A portion of the bank BANK corresponding to the light emitting area EA of the subpixel may be opened.A portion of the anode electrode AE may be exposed through an opening (open part) of the bank BANK. A light emitting layer EL may be disposed on a side surface of the bank BANK and the opening (open part) of the bank BANK. All or part of the light emitting layer EL may be disposed between adjacent banks BANK.In the opening of the bank BANK, the light emitting layer EL may contact the anode electrode AE. A cathode electrode may be disposed on the light emitting layer EL. The light emitting element ED may be formed by the anode electrode AE, the light emitting layer EL, and the cathode electrode CE. The light emitting layer EL may include an organic film.On the above-described light emitting element ED, an encapsulation layer ENCAP may be disposed. The encapsulation layer ENCAP may have a single-layer structure or a multi-layer structure. For example, as illustrated in FIG. 5, the encapsulation layer ENCAP may include a first encapsulation layer PAS 1, a second encapsulation layer PCL, and a third encapsulation layer PAS 2.For example, the first encapsulation layer PAS 1 and the third encapsulation layer PAS 2 may be inorganic films, and the second encapsulation layer PCL may be an organic layer. Of the first encapsulation layer PAS 1, the second encapsulation layer PCL, and the third encapsulation layer PAS 2, the second encapsulation layer PCL may be the thickest. Accordingly, the second encapsulation layer PCL may serve as a planarization layer. The first encapsulation layer PAS 1 is also referred to as a first inorganic encapsulation layer. The second encapsulation layer PCL is also referred to as an organic encapsulation layer, and the third encapsulation layer PAS 2 is also referred to as a second inorganic encapsulation layer.The first encapsulation layer PAS 1 may be disposed on the cathode electrode and as close as possible to the light emitting element ED. The first encapsulation layer PAS 1 may be formed of an inorganic insulation material that may be deposited at low temperatures. For example, the first encapsulation layer PAS 1 may be formed of silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al 2 O 3). Since the first encapsulation layer PAS 1 is deposited in a low temperature atmosphere, the first encapsulation layer PAS 1 may prevent damage to the light emitting layer EL including an organic material at risk during the deposition process in a high temperature atmosphere.The second encapsulation layer PCL may have a smaller area than the first encapsulation layer PAS 1. In this case, the second encapsulation layer PCL may be formed so that two opposite ends of the first encapsulation layer PAS 1 are exposed. The second encapsulation layer PCL serves as a buffer to relieve stress between layers caused by bending of the display device 100, and may also serve to improve planarization performance. The second encapsulation layer PCL may be, for example, an acrylic resin, an epoxy resin, polyimide, polyethylene, or silicon oxy-carbon (SiOC), and may be formed of an organic insulating material. The second encapsulation layer PCL may be formed by, for example, an inkjet method.The third encapsulation layer PAS 2 may be formed on the substrate SUB on which the second encapsulation layer PCL is formed to cover the respective upper surfaces and side surfaces of the second encapsulation layer PCL and the first encapsulation layer PAS 1. The third encapsulation layer PAS 2 may minimize or prevent the intrusion of moisture or oxygen from the outside into the first encapsulation layer PAS 1 and the second encapsulation layer PCL. The third encapsulation layer PAS 2 is formed of, for example, an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), silicon oxynitride (SiON), or aluminum oxide (Al 2 O 3).Referring to FIG. 5, in plan view, the light emitting element ED overlaps with the display region DA. The light emitting element ED includes the cathode electrode CE, the anode electrode AE, and the light emitting layer EL. The light emitting layer EL may have various portions. For example, the light emitting layer EL includes a first portion FPEL, a second portion SPEL, and a third portion TPEL. The first, second and third portions of the light emitting layer EL are spaced apart from each other. It can also be said that the first, second and third portions of the light emitting layer EL are separated from each other. For example, the first portion FPEL of the light emitting layer EL overlaps the display region DA in plan view. This is also shown in FIGS. 6, 7, 10, 11 and 13.Similarly, the cathode electrode CE may have different portions. For example, the cathode electrode CE includes a first portion FPCE, a second portion SPCE, and a third portion TPCE. The first, second and third portions of the cathode electrode CE are spaced apart from each other. It can also be said that the first, second and third portions of the cathode electrode CE are separated from each other. For example, the first portion FPCE of the cathode electrode CE overlaps the display area DA in plan view. This is also shown in FIGS. 6, 7, 10, 11 and 13.Referring to FIG. 5, when the touch sensor TS is a type embedded in the display panel, the touch sensor TS may be disposed on the encapsulation layer ENCAP. The structure of the touch sensor TS will be described in detail below.A touch buffer film T-BUF may be disposed on the encapsulation layer ENCAP. A touch sensor TS may be disposed on the touch buffer film T-BUF.The touch sensor TS may include touch sensor metals TSM and a bridge metal BRG disposed on different layers.Between the touch sensor metals TSM and the bridge metal BRG, a touch interlayer insulating film T-ILD may be disposed.For example, touch sensor metals TSM may include a first touch sensor metal TSM, a second touch sensor metal TSM, and a third touch sensor metal TSM, which are arranged side by side. The third touch sensor metal TSM is disposed between the first touch sensor metal TSM and the second touch sensor metal TSM, and when the first touch sensor metal TSM and the second touch sensor metal TSM are electrically connected to each other, the first touch sensor metal TSM and the second touch sensor metal TSM may be electrically connected to each other via the bridge metal BRG disposed on another layer. The bridge metal BRG may be insulated from the third touch sensor metal TSM by the touch interlayer insulating film T-ILD.When the touch sensor TS is manufactured on the display panel, moisture may be generated from the chemical solution (e.g., developer or etchant) used in this process. By disposing the touch sensor TS on the touch buffer layer T-BUF, a chemical solution or moisture can be prevented from entering the light emitting layer EL including an organic material during the manufacturing process of the touch sensor TS. In this way, the touch buffer film T-BUF can prevent damage to the light emitting layer EL that is endangered by chemicals or moisture.The touch buffer film T-BUF is formed of an organic insulating material having a low dielectric constant of 1 to 3 and formed at a low temperature not higher than a predetermined temperature (e.g., 100° C.) to prevent damage to the light emitting layer EL including the organic material at risk of high temperatures. The touch buffer film T-BUF may be formed of, for example, an acrylic, epoxy, or siloxane-based material. When the display device is bent, the encapsulation layer ENCAP may be damaged, and the touch sensor metal TSM positioned on the touch buffer layer T-BUF may crack. Even when the display device 100 is bent, the touch buffer layer T-BUF formed of an organic insulating material and having the planarization capability can prevent damage to the encapsulation layer ENCAP and / or breakage of the touch sensor metals TSM and the bridge metal BRG forming the touch sensor TS.Referring to FIG. 5, a touch line TL 1 or TL 2 electrically connecting the touch electrode TE and the touch pad may be disposed. The touch line TL 1 or TL 2 may be formed of at least one of the sensor metal TSM and the bridge metal BRG.When the display panel 110 is of a type in which the touch sensor is embedded, the touch line TL 1 or TL 2 may extend along the outer inclined surface of the encapsulation layer ENCAP and extend beyond the upper part of the bank DAM into the non-display area NDA.A protection layer PAC may be disposed to cover the touch sensor TS. The protective layer PAC may be an organic insulating film.The display device may include a plurality of insulating films disposed on the substrate SUB and below the plurality of light emitting elements ED. In the disclosure, the plurality of insulating films disposed on the substrate SUB and below the plurality of light emitting elements ED may refer to the first buffer layer BUF 1 to the second planarization layer PLN 2 and the insulating films disposed therebetween.The display device may include a moisture preventing structure MPS. The moisture prevention structure MPS may be disposed in the first non-display area NDA 1. In the embodiments illustrated in FIG. 5, the moisture preventing structure MPS may be disposed in the outer cut portion area OSTA. In the disclosure, the moisture prevention structure MPS positioned in the outer cut portion area OSTA may be referred to as an outer moisture prevention structure.The moisture preventing pattern MPS may include an undercut portion of at least one of the plurality of insulating films. The moisture prevention structure MPS of the display device according to the embodiments illustrated in FIG. 5 may include an undercut region disposed in the inorganic insulating film among the plurality of light emitting elements ED and disposed on the substrate SUB. The undercut portion disposed in the inorganic insulating film may mean that the undercut portion is formed by etching the inorganic insulating film. The inorganic insulating film described above may be, for example, one or more of a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI 1, a first interlayer insulating film ILD 1, a second buffer layer BUF 2, a second gate insulating film GI 2, and a second interlayer insulating film ILD 2. The display device according to an embodiment illustrated in FIG. 5 includes the moisture prevention structure MPS in which the active buffer layer ABUF, the first gate insulating film GI 1, the first interlayer insulating film ILD 1, the second buffer layer BUF 2, the second gate insulating film GI 2, and the second interlayer insulating film ILD 2 include the undercut region UCA.The first non-display area NDA 1 may include a variable bezel area VBA, an inner cut-off portion area ISTA, a bank area DAMA, and an outer cut-off portion area OSTA. The dam region DAMA may be a region where the dam DAM is disposed for controlling the flow of the second encapsulation layer PCL. Accordingly, the bank DAM may be disposed in the first non-display area NDA 1. The bank DAM may include one or more insulating films, and may include, for example, a second planarization layer PLN 2 and a bank BANK disposed on the second planarization layer PLN 2.The cut-off portion ST may be positioned in the first non-display area NDA 1. Since the cut-off portion ST is positioned in the first non-display area NDA 1, moisture can be prevented from entering the display area DA from the outside through the camera hole CH. The cut-off portion ST may refer to a structure for blocking the moisture penetration path by cutting the light emitting layer EL and the cathode electrode CE deposited entirely in the entire display area DA and the first non-display area NDA 1 of the display device. The cut-off portion ST may refer to a structure in which the light emitting layer EL and the cathode electrode CE are separated by a step formed from the second source-drain electrode SD 2. For example, the cut-off portion ST may include a second source-drain electrode SD 2 and a light emitting layer EL, and may further include a cathode electrode CE. In this example, the second source-drain electrode SD 2 may have a three-layer structure including a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, and may have a structure in which the second layer is recessed between the first layer and the third layer.The interrupt portion ST may include an inner interrupt portion IST and an outer interrupt portion OST. The internal cut-off portion IST may be disposed between the display area DA and the bank DAM. In other words, the internal cut-off portion IST may refer to a cut-off portion positioned in the internal cut-off portion area ISTA. The outer cut-off portion OST may be positioned between the dam DAM and the camera hole CH. In other words, the outer cut-off portion OST may refer to a cut-off portion positioned in the range of the outer cut-off portion range OSTA. Since the cut-off portion ST is provided inside and outside the bank DAM, it is possible to more effectively prevent the entry of moisture from the outside into the display area DA through the camera hole CH.The variable bezel area VBA may be disposed in the first non-display area NDA 1 and positioned between the display area DA and the internal cut-off portion area ISTA. Signal lines for transmitting signals to a plurality of light emitting elements disposed in the display area DA may be disposed in the variable bezel area VBA. For example, the first gate electrode GAT 1, the second gate electrode GAT 2, the first source-drain electrode SD 1, and the second source-drain electrode SD 2 may be disposed in the variable bezel area VBA. More specifically, a plurality of gate lines may be disposed in the variable bezel area VBA.FIG. 6 is a cross-sectional view showing a display device 100 according to the embodiments of the disclosure. More specifically, FIG. 6 is a cross-sectional view of the portion A-B of FIG. 4.In describing the embodiments illustrated in FIG. 6, anything that is not expressly described otherwise may be the same as that described above with reference to FIGS. 1-5.The display device according to the embodiments shown in FIG. 6 has an inner moisture preventing structure, in contrast to the display device according to the embodiments shown in FIG. 5 having an outer moisture preventing structure. In other words, the moisture preventing structure MPS of the display device according to the embodiments illustrated in FIG. 6 is an inner moisture preventing structure positioned in the inner cut-off portion area ISTA.The display device according to embodiments of the disclosure may include two or more moisture prevention structures.FIG. 7 is a cross-sectional view showing a display device 100 according to the embodiments of the disclosure. More specifically, FIG. 7 is a cross-sectional view of the portion A-B of FIG. 4In describing the embodiments illustrated in FIG. 7, all that is not expressly described otherwise may be the same as the embodiments described above with reference to FIGS. 1-6.In contrast to the display device according to the embodiments illustrated in FIG. 5, which does not have the inner moisture prevention structure but the outer moisture prevention structure, the display device according to the embodiments illustrated in FIG. 7 has the outer moisture prevention structure and the inner moisture prevention structure. In other words, the display device according to the embodiments illustrated in FIG. 7 may include one or more moisture preventing structures MPS including an inner moisture preventing structure positioned in the inner cut-off portion area ISTA and an outer moisture preventing structure positioned in the outer cut-off portion area OSTA.In the display device according to embodiments of the disclosure, the light emitting layer EL may be positioned to extend from the display region DA to delimit the camera hole CH. In other words, the light emitting layer EL may be formed by entirely depositing on the entire region of the display region DA. The light emitting layer EL may be separated by the moisture preventing pattern MPS. Since the light emitting layer EL is interrupted at the moisture preventing pattern MPS, external moisture entering through the camera hole CH can be prevented from entering the display area DA through the light emitting layer EL.The moisture prevention structure MPS may include an undercut portion UCA. The undercut region UCA may be formed in the inorganic insulating film on the substrate SUB and may be disposed below the plurality of light emitting elements ED.Referring to FIG. 7, the moisture preventing structure MPS includes a first moisture preventing structure FMPS and a second moisture preventing structure SMPS. As shown, in plan view, the first moisture preventing pattern FMPS is disposed between the dam pattern DAM and the hole CH of the camera. In the plan view, the dam structure DAM is interposed between the first moisture preventing structure FMPS and the second moisture preventing structure SMPS. In addition, between the first moisture prevention structure FMPS and the bank structure DAM, various moisture permeation prevention structures may be provided. Also, between the second moisture prevention structure FMPS and the dam structure DAM, various moisture permeation prevention structures may be provided.As described above, the display device according to the embodiments of the disclosure may include one or more moisture preventing structures MPS disposed in the first non-display region. Hereinafter, a moisture prevention structure MPS that may be included in embodiments of the disclosure will be described in more detail.FIG. 8 is a cross-sectional view showing a moisture prevention structure MPS of a display device according to the embodiments of the disclosure. In the following description of the display device according to the embodiments shown in Fig. 8, anything which is not separately described may coincide with that described above with reference to Figs. 1 to 7.Referring to FIG. 8, the moisture preventing structure MPS may include an undercut region UCA of at least a plurality of insulating films. In the embodiments illustrated in FIG. 8, the undercut region UCA may be formed in the active buffer layer ABUF to the second interlayer insulating film ILD 2. The light-emitting layer EL can be interrupted in the undercut region UCA.The moisture preventing structure MPS may include a metal layer MTL positioned on the undercut region UCA. The metal layer MTL can be a second source-drain electrode, for example. The light emitting layer EL may be interrupted at a side surface of the metal layer MTL.The metal layer MTL may be formed of, for example, a triple layer. When the metal layer MTL is a triple layer, the metal layer MTL may include a first layer M 1, a second layer M 2 disposed on the first layer M 1, and a third layer M 3 disposed on the second layer M 2.The first layer M 1 and the third layer M 3 may be metal layers of the same material, and the second layer M 2 may be a metal layer of a different material than the first layer M 1 and the third layer M 3. For example, the first layer M 1 and the third layer M 3 may include titanium (Ti), and the second layer M 2 may include aluminum (Al). The metal layer MTL may have, for example, a multilayer structure having a Ti / Al / Ti structure. Since such materials are selected for the first layer M 1 to the third layer M 3, the second layer M 2 may be formed of a material having better conductivity, and the first layer M 1 and the third layer M 3 may be formed of materials that may provide protection during the manufacturing process.The second layer M 2 may have a shape that is recessed more than the first layer M 1 and the third layer M 3. In other words, the second layer M 2 may be more etched than the first layer M 1 and the third layer M 3 and thus may have a more recessed shape than the first layer M 1 and the third layer M 3. Accordingly, the first layer M 1 and the third layer M 3 may protrude further than the second layer M 2. Further, the first layer M 1 may have a shape that protrudes further than the third layer M 3. Herein, recessed or protruding means recessed or protruding in a direction parallel to the substrate SUB, and may mean recessed or protruding with respect to the undercut region UCA. Since the first layer M 1, the second layer M 2, and the third layer M 3 have the shapes described above, the light emitting layer EL can be effectively interrupted by the moisture prevention structure MPS. In particular, the light emitting layer EL may be interrupted at least twice by the moisture preventing pattern MPS. For example, the light emitting layer EL may be interrupted at the undercut region UCA and at a side surface of the metal layer MTL. More specifically, the light emitting layer EL may be interrupted between the first layer M 1 and the second layer M 2. Further, the light emitting layer EL may be interrupted between the second layer M 2 and the third layer M 3. Further, the light emitting layer EL may be interrupted between the first layer M 1 and the third layer M 3.The second layer M 2 may have a shape in which an interface with the first layer M 1 protrudes more than an interface with the third layer M 3. This shape may be formed by further etching the second layer M 2 opposite to the first layer M 1 and the third layer M 3.The undercut region UCA may denote a region undercut with respect to the metal layer MTL. In particular, it can be a region which is undercut under the first layer M 1.The moisture prevention structure MPS illustrated in FIG. 8 may be formed as follows.First, a plurality of insulating films may be formed on the substrate SUB. The plurality of insulating films may be one or more of a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI 1, a first interlayer insulating film ILD 1, a second buffer layer BUF 2, a second gate insulating film GI 2, and a second interlayer insulating film ILD 2. A metal layer MTL may be patterned on the plurality of insulating films. The metal layer MTL may be disposed in the order of the first layer M 1, the second layer M 2, and the third layer M 3.A second planarization layer PLN 2 may be formed covering a portion of the metal layer MTL. In this case, the exposed second layer M 2 of the metal layer MTL may be partially etched while forming the second planarization layer PLN 2.After the anode electrode material is deposited on the second planarization layer PLN 2, the anode electrode may be formed by performing a wet etching process. In this case, while performing the wet etching process, the exposed second layer M 2 of the metal layer MTL may be further etched.A dry etching process may be performed to pattern some of the plurality of insulating films. In the process of performing the dry etching process, some insulating films disposed under the metal layer MTL may be etched inward under the metal layer MTL to form an undercut region UCA. For example, the second interlayer insulating film ILD 2, the second gate insulating film GI 2, the second buffer layer BUF 2, the first interlayer insulating film ILD 1, the first gate insulating film GI 1, and the active buffer layer ABUF disposed under the metal layer MTL may be etched inward under the metal layer MTL to form an undercut region UCA.A bank BANK covering a portion of the anode electrode AE may be formed. In this case, the exposed second layer M 2 of the metal layer MTL may be further etched during the development of the bank BANK. By the dry etching process, the wet etching process, and the developing process, the metal layer MTL may have a structure in which the second layer M 2 is recessed between the first layer M 1 and the third layer M 3, and an undercut region UCA may be formed under the metal layer MTL.The light emitting layer EL and the cathode electrode CE may be formed sequentially. In this case, the light emitting layer EL may be interrupted at the side surface of the metal layer MTL and the undercut region UCA.Referring to FIG. 8, the light emitting layer EL has different portions. As described above, the light emitting layer EL includes a first portion FPEL, a second portion SPEL, and a third portion TPEL. The light emitting layer EL may further include a fourth portion FRPEL. As shown, the first, second, third and fourth portions of the light emitting layer EL are spaced apart from each other. It can also be said that the first, second, third and fourth parts of the light emitting layer EL are separated from each other.Here, the second portion SPEL of the light emitting layer EL is located on the first metal layer M 1. The first metal layer M 1 extends further than a portion of the insulating films in a first direction (e.g., in the lateral direction) to form an undercut region UCA. For example, the first metal layer M 1 extends further than a portion of the insulating films such as ILD 2, GI 2, BUF 2, ILD 1, GI 1 to form the undercut region UCA.The third portion TPEL of the light emitting layer EL is disposed at a location adjacent to the undercut region UCA. The third light emitting layer portion TPEL covers, for example, the side surfaces of insulating films such as BUF 2, ILD 1, GL 1, BUF 1. While the third portion TPEL of the light emitting layer EL is spaced apart from the second portion SPEL of the light emitting layer EL, the third portion TPEL and the second portion SPEL overlap each other in plan view.The fourth portion FRPEL of the light emitting layer EL lies on the metal layer MTL. The third metal layer M 3 extends further than a portion of the second metal layer M 2 in the first direction (e.g., in the transverse direction). More specifically, the fourth portion FRPEL of the light emitting layer EL is located on the extended portion of the third metal layer M 3. Although it can be said that both the fourth portion FRPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL are located on the first metal layer M 1, the fourth portion FRPEL of the light emitting layer EL may be located directly on the third metal layer M 3 and the second portion SPEL of the light emitting layer EL may be located directly on the first metal layer M 1.Similarly, the cathode electrode CE has different portions. As described above, the cathode electrode CE includes a first portion FPCE, a second portion SPCE, and a third portion TPCE. The cathode electrode CE may further include a fourth portion FRPCE. As shown, the first, second, third and fourth portions of the cathode electrode CE are spaced apart from each other. It can also be said that the first, second, third and fourth portions of the cathode electrode CE are separated from each other.Here, the second portion SPCE of the cathode electrode CE is located on the first metal layer M 1. More specifically, the second portion SPCE of the cathode electrode CE is located on the second portion SPEL of the light emitting layer EL.The third portion TPCE of the cathode electrode CE is disposed at a location adjacent to the undercut region UCA. More specifically, the third portion TPCE of the cathode electrode CE is located on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE and the second portion SPCE overlap each other in a plan viewThe fourth portion FRPCE of the cathode electrode CE lies on the metal layer MTL. More specifically, the fourth portion FRPCE of the cathode electrode CE is located on the fourth portion FRPEL of the light emitting layer EL. Both the fourth portion FRPCE of the cathode electrode CE and the fourth portion FRPEL of the light-emitting layer EL are spaced apart from the second metal layer M 2. It can be said that both the fourth portion FRPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE are on the first metal layer M 1. Further, the fourth portion FRPCE of the cathode electrode CE is in direct contact with the fourth portion FRPEL of the light emitting layer EL, and the second portion SPCE of the cathode electrode CE is in direct contact with the second portion SPEL of the light emitting layer EL. These features are also shown in FIG. 9 and will not be described repeatedly.FIG. 9 is a cross-sectional view illustrating a moisture prevention structure of a display device according to the embodiments of the disclosure. In the following description of the display device according to the embodiments shown in Fig. 9, anything which is not separately described may coincide with that described above with reference to Figs. 1 to 8.Referring to FIG. 9, the moisture preventing structure MPS may include an undercut region UCA of at least a plurality of insulating films. In the embodiments illustrated in FIG. 9, the undercut region UCA may be formed in the second buffer layer BUF 2 to the second interlayer insulating film ILD 2. The light-emitting layer EL can be interrupted in the undercut region UCA.The moisture prevention structure MPS illustrated in FIG. 9 may be different from the moisture prevention structure MPS illustrated in FIG. 8 in terms of the shape of the undercut region UCA. In the moisture prevention structure MPS illustrated in FIG. 9, the undercut region UCA may include a step portion STP.The step portion STP may refer to a step formed when some insulating films are not etched inward under the metal layer MTL in the undercut region UCA. For example, when the second interlayer insulating film ILD 2 and the second gate insulating film GI 2 under the metal layer MTL are etched inward and the second buffer layer BUF 2, the first interlayer insulating film ILD 1, and the first gate insulating film GI 1 are not etched inward under the metal layer MTL, the step portion STP may include the second buffer layer BUF 2, the first interlayer insulating film ILD 1, and the first gate insulating film GI 1.In some embodiments, the third portion TPEL of the light emitting layer EL is disposed over the step portion STP and covers the side surfaces of GI 2, BUF 2, ILD 2 and the top surfaces of BUF 2. Further, the third portion TPEL of the light emitting layer EL covers the side surfaces of BUF 2, ILD 1, GI 1.The moisture prevention structure MPS illustrated in FIG. 9 may be formed as follows.First, a plurality of insulating films may be formed on the substrate SUB. The plurality of insulating films may be one of a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI 1, a first interlayer insulating film ILD 1, a second buffer layer BUF 2, a second gate insulating film GI 2, and a second interlayer insulating film ILD 2. Some of the plurality of insulating films may be etched in the vicinity of a region where the moisture preventing pattern MPS is to be formed later. For example, the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 may be etched to correspond to a region to be formed later by patterning the metal layer MTL, thereby exposing the second buffer layer BUF 2. In this case, the exposed second buffer layer BUF 2 may also be partially etched. Specifically, when a mask having an opening is positioned on the plurality of insulating films and a dry etching operation is performed, the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 may be etched to expose the second buffer layer BUF 2. This etching process may be referred to as a primary dry etching process. The opening formed in the mask may be formed at a location corresponding to a region where the metal layer MTL is to be patterned later.A metal layer MTL may be patterned on the plurality of insulating films. The metal layer MTL may be disposed in the order of the first layer M 1, the second layer M 2, and the third layer M 3.A second planarization layer PLN 2 may be formed covering a part of the metal layer MTL. In this case, the exposed second layer M 2 of the metal layer MTL may be partially etched while the second planarization layer PLN 2 is developed.After the anode electrode material is deposited on the second planarization layer PLN 2, the anode electrode may be formed by a wet etching process. In this case, while performing the wet etching process, the exposed second layer M 2 of the metal layer MTL may be further etched.A dry etching process may be performed to pattern some of the plurality of insulating films. During the dry etching operation, some insulating films disposed under the metal layer MTL may be etched inward under the metal layer MTL to form an undercut region UCA, and some exposed insulating films may be etched. This etching process may be referred to as a second dry etching process. In performing the second dry etching process, isotropic conditions may be used for the dry etching process. For example, when the second dry etching process is performed using the metal layer MTL as a mask, the second interlayer insulating film ILD 2 and the second gate insulating film GI 2 disposed under the metal layer MTL may be etched inward under the metal layer MTL to form an undercut region UCA. At the same time, the second buffer layer BUF 2, the first interlayer insulating film ILD 1, and the first gate insulating film GI 1 may be etched toward the substrate SUB to form a step shape. In this case, the active buffer layer ABUF may also be partially etched toward the substrate SUB.In other words, when the process of etching the plurality of insulating films disposed in the region where the moisture preventing pattern MPS is positioned is divided into the first dry etching process and the second dry etching process, the undercut region UCA and the step portion STP may be formed under the metal layer MTL simultaneously.A bank BANK may be formed covering a portion of the anode electrode AE. In this case, the exposed second layer M2 of the metal layer MTL may be further etched during the development of the bank BANK. By the dry etching process, the wet etching process, and the developing process, the metal layer MTL may have a structure in which the second layer M 2 is recessed between the first layer M 1 and the third layer M 3, and the undercut region UCA and the step portion STP may be formed under the metal layer MTL.The light emitting layer EL and the cathode electrode CE may be formed sequentially. In this case, the light emitting layer EL may be interrupted at the side surface of the metal layer MTL and the undercut region UCA.FIG. 10 is a cross-sectional view showing a display device 100 according to the embodiments of the disclosure. More specifically, FIG. 10 is a cross-sectional view of the portion A-B of FIG. 4.In describing the embodiments illustrated in FIG. 10, all that is not expressly described otherwise may be the same as that described above with reference to FIGS. 1-9.The display device according to the embodiments illustrated in FIG. 10 may include an undercut region UCA of an organic insulating film, in contrast to the display device according to the embodiments illustrated in FIGS. 5 to 7, in which the moisture preventing structure MPS includes an undercut region UCA of the inorganic insulating film. More specifically, the moisture preventing structure MPS of the display device according to the embodiments illustrated in FIG. 10 may include an inner moisture preventing structure and an undercut region UCA of the organic insulating film.The moisture prevention structure MPS may include an undercut portion UCA. The undercut region UCA may be formed in the organic insulating film disposed on the substrate SUB and may be positioned below the plurality of light emitting elements ED.FIG. 11 is a cross-sectional view showing a display device 100 according to the embodiments of the disclosure. More specifically, FIG. 11 is a cross-sectional view of the portion A-B of FIG. 4.In describing the embodiments illustrated in FIG. 11, anything that is not expressly described otherwise may be the same as that described above with reference to FIGS. 1-10.In contrast to the display device according to the embodiments illustrated in FIG. 10 having an inner moisture preventing structure and no outer moisture preventing structure, the display device according to the embodiments illustrated in FIG. 11 may have an outer moisture preventing structure and no inner moisture preventing structure. Further, the display device according to the embodiments shown in FIG. 11 may include an undercut region UCA of the organic insulating film, similarly to the display device according to the embodiments shown in FIG. 10.The moisture prevention structure MPS may include an undercut portion UCA. The undercut region UCA may be formed in the organic insulating film disposed on the substrate SUB and may be disposed below the plurality of light emitting elements ED.The embodiments illustrated in FIGS. 10 and 11 may provide a display device having a moisture preventing structure MPS including a so-called undercut region UCA of an organic insulating film. Further, the embodiments shown in FIG. 10 have an inner moisture preventing structure, and the embodiments shown in FIG. 11 have an outer moisture preventing structure. However, the embodiments of the disclosure are not limited to these display devices, and the embodiments of the disclosure also include embodiments including an inner moisture preventing structure and / or an outer moisture preventing structure and the moisture preventing structures MPS having an undercut region UCA of an organic insulating film.FIG. 12 is a cross-sectional view showing a moisture preventing structure MPS of a display device 100 as illustrated in FIGS. 10 and 11. In the following description of the display device according to the embodiments shown in FIG. 12, the elements not described in detail may be the same as those described above with reference to FIGS. 1 to 11.The moisture prevention structure MPS may include an undercut portion UCA. The undercut region UCA may be formed in the organic insulating film disposed on the substrate SUB, and may be positioned below the plurality of light emitting elements. The undercut region UCA formed in the organic insulating film may mean that at least one organic insulating film is etched to form an undercut region UCA. The organic insulating film on which the undercut region UCA is formed may be one or more of, for example, the first planarization layer PLN 1 and the second planarization layer PLN 2. FIG. 12 shows embodiments in which the moisture preventing structure MPS includes a first planarization layer PLN 1 and an undercut region UCA is formed in the first planarization layer PLN 1, but the embodiments of the disclosure are not limited thereto. For example, the embodiments of the disclosure may have embodiments in which the moisture preventing structure may include one or more of the first planarization layer PLN 1 and the second planarization layer PLN 2, and an undercut region UCA is formed in one or more of the first planarization layer PLN 1 and the second planarization layer PLN 2.The moisture preventing structure MPS may include a metal layer MTL positioned on the undercut region UCA. The metal layer MTL may be a second source-drain electrode, for example. The light emitting layer EL may be interrupted at a side surface of the metal layer MTL.The metal layer MTL may be formed of, for example, a triple layer. When the metal layer MTL is a triple layer, the metal layer MTL may include a first layer M 1, a second layer M 2 positioned on the first layer M 1, and a third layer M 3 positioned on the second layer M 2.The second layer M 2 may have a shape that is recessed more than the first layer M 1 and the third layer M 3. In other words, the second layer M 2 may be more etched than the first layer M 1 and the third layer M 3 and thus may have a more recessed shape than the first layer M 1 and the third layer M 3. Accordingly, the first layer M 1 and the third layer M 3 may protrude further than the second layer M 2. Herein, recessed or protruding means recessed or protruding in a direction parallel to the substrate SUB, and may mean recessed or protruding with respect to the undercut region UCA. Since the first layer M 1, the second layer M 2, and the third layer M 3 have the shapes described above, the light emitting layer EL can be effectively interrupted by the moisture prevention structure MPS. In particular, the light emitting layer EL may be interrupted at least twice by the moisture preventing pattern MPS. For example, the light emitting layer EL may be interrupted at the undercut region UCA and at a side surface of the metal layer MTL. More specifically, the light emitting layer EL may be interrupted between the first layer M 1 and the second layer M 2.The second layer M 2 may have a shape in which an interface with the first layer M 1 protrudes more than an interface with the third layer M 3. This shape may be formed by further etching the second layer M 2 opposite to the first layer M 1 and the third layer M 3.The undercut region UCA may be a region undercut with respect to the metal layer MTL. In particular, it can be a region which is undercut under the first layer M 1.As illustrated in FIG. 12, the light emitting layer EL may have different portions. Here, the light emitting layer EL includes a first portion FPEL, a second portion SPEL, and a third portion TPEL. In the plan view, the first portion FPEL overlaps with the display area DA. As shown, the first, second and third portions of the light emitting layer EL are spaced apart from each other. It can also be said that the first, second and third portions of the light emitting layer EL are separated from each other.Here, the second portion SPEL of the light emitting layer EL lies on the first metal layer M 1. The first metal layer M 1 extends further than a portion of the insulating films PLN 1 in a first direction (e.g., in the lateral direction) to form an undercut region UCA. For example, the first metal layer M 1 extends further than a portion of the insulating film PLN 1 to form the undercut region UCA.The third portion TPEL of the light emitting layer EL is disposed at a location adjacent to the undercut region UCA. In particular, the third portion TPEL of the light emitting layer EL is arranged below the second portion SPEL of the light emitting layer EL. For example, the third light emitting layer portion TPEL covers numerous surfaces (e.g., side surfaces and upper surfaces) of the insulating film PLN 1. While the third portion TPEL of the light emitting layer EL is spaced apart from the second portion SPEL of the light emitting layer EL, the third portion TPEL and the second portion SPEL overlap each other in plan view.Similarly, the cathode electrode CE has different portions. Here, the cathode electrode CE includes a first portion FPCE, a second portion SPCE, and a third portion TPCE. In the plan view, the first portion FPCE of the cathode electrode CE overlaps with the display region DA. As shown, the first, second and third portions of the cathode electrode CE are spaced apart from each other. It can also be said that the first, second and third portions of the cathode electrode CE are separated from each other.Here, the second portion SPCE of the cathode electrode CE is located on the first metal layer M 1. More specifically, the second portion SPCE of the cathode electrode CE is located on the second portion SPEL of the light emitting layer EL and on the third metal layer M 3. As shown in FIG. 12, the second portion SPCE of the cathode electrode CE is not in direct contact with the second portion SPEL of the light emitting layer EL.The third portion TPCE of the cathode electrode CE is disposed at a location adjacent to the undercut region UCA. More specifically, the third portion TPCE of the cathode electrode CE is located on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE and the second portion SPCE overlap each other in a plan view.FIG. 13 is a cross-sectional view illustrating a display device according to embodiments of the disclosure. More specifically, FIG. 13 is a cross-sectional view of the portion A-B of FIG. 4.In the following description of the display device shown in FIG. 13, what will not be described in detail may be identical to the display device described above with reference to FIGS. 1 to 12.The display device according to the embodiments shown in FIG. 13 is different from the display device shown in FIGS. 5 to 7 in that the cut-off portion is not disposed in the outer cut-off portion area OSTA and the inner cut-off portion area ISTA, and the moisture preventing structure MPS is entirely disposed in the outer cut-off portion area OSTA and the inner cut-off portion area ISTA. Moreover, the structure of the moisture preventing structure MPS is also different from the display device shown in FIGS. 5 to 7. Although FIG. 10 shows an embodiment in which no cut-off portion is disposed in the outer cut-off portion area OSTA and the inner cut-off portion area ISTA, an embodiment in which one or more moisture preventing structures MPS illustrated in FIG. 10 are provided in the first non-display area and the cut-off portion ST illustrated in FIGS. 5 to 7 may also be provided in the embodiments of the disclosure.FIG. 14 is a cross-sectional view showing the moisture prevention structure MPS illustrated in FIG. 13. In the following description of the moisture prevention structure MPS illustrated in FIG. 14, anything that is not described in detail may be identical to the moisture prevention structure described above with reference to FIGS. 1 to 13.Referring to FIG. 14, the moisture preventing structure MPS may include an undercut portion UCA. The undercut region UCA may be disposed in the organic insulating film disposed on the substrate SUB and below the plurality of light emitting elements. The positioning of the undercut region UCA in the organic insulating film may mean that at least one organic insulating film is etched to form an undercut region UCA. The organic insulating film on which the undercut region UCA is formed may be one or more of, for example, the first planarization layer PLN 1 and the second planarization layer PLN 2. FIG. 14 shows embodiments in which the moisture preventing structure MPS includes a first planarization layer PLN 1 and an undercut region UCA is formed in the first planarization layer PLN 1, but the embodiments of the disclosure are not limited thereto. For example, the embodiments of the disclosure may have embodiments in which the moisture preventing structure may include one or more of the first planarization layer PLN 1 and the second planarization layer PLN 2, and an undercut region UCA is formed in one or more of the first planarization layer PLN 1 and the second planarization layer PLN 2.The moisture preventing pattern MPS may include a concave portion CONC of at least one of a plurality of insulating films. The concave portion CONC may be disposed, for example, in the inorganic insulating film on the substrate SUB and under the plurality of light emitting elements. The concave portion CONC disposed in the inorganic insulating film may mean that at least one of the inorganic insulating films is etched to form a concave portion CONC. The inorganic insulating film may be an inorganic insulating film positioned on the substrate SUB and positioned under the light emitting element. The inorganic insulating film may be, for example, one or more of the first buffer layer BUF 1 and the second interlayer insulating film ILD 2, and the insulating film disposed between the two layers. FIG. 14 shows an embodiment in which the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 have a concave portion CONC, but the embodiments of the disclosure are not limited to these embodiments.The undercut region UCA of the organic insulating film may be positioned in the concave portion CONC. A portion of the inorganic insulating film may be exposed by the undercut region UCA of the organic insulating film. For example, the second buffer layer BUF 2 may be exposed through the undercut region UCA of the organic insulating film, and the light emitting layer EL may be positioned on the exposed second buffer layer BUF 2.The moisture preventing structure MPS may include a metal layer MTL positioned on the undercut region UCA. The metal layer MTL may be a second source-drain electrode, for example. The light emitting layer EL may be interrupted at a side surface of the metal layer MTL.The metal layer MTL may be formed of, for example, a triple layer. When the metal layer MTL is a triple layer, the metal layer MTL may include a first layer M 1, a second layer M 2 positioned on the first layer M 1, and a third layer M 3 positioned on the second layer M 2.The second layer M 2 may have a shape that is more recessed than the first layer M 1 and the third layer M 3. In other words, the second layer M 2 may be more etched than the first layer M 1 and the third layer M 3, and thus may have a shape recessed further than the first layer M 1 and the third layer M 3. Accordingly, the first layer M 1 and the third layer M 3 may protrude further than the second layer M 2. Herein, recessed or protruding means recessed or protruding in a direction parallel to the substrate SUB and may be recessed or protruding with respect to the undercut region UCA. Since the first layer M 1, the second layer M 2, and the third layer M 3 have the shapes described above, the light emitting layer EL can be effectively interrupted by the moisture prevention structure MPS. In particular, the light emitting layer EL may be interrupted at least twice by the moisture preventing pattern MPS. For example, the light emitting layer EL may be interrupted at the undercut region UCA and at a side surface of the metal layer MTL. More specifically, the light emitting layer EL may be interrupted between the first layer M 1 and the second layer M 2.The second layer M 2 may have a shape in which an interface with the first layer M 1 protrudes more than an interface with the third layer M 3. This shape may be formed by further etching the second layer M 2 opposite to the first layer M 1 and the third layer M 3.The moisture prevention structure MPS illustrated in FIG. 14 may be formed as follows.First, a plurality of insulating films may be formed on the substrate SUB. The plurality of insulating films may be one or more of a multi-buffer layer MBUF, an active buffer layer ABUF, a first gate insulating film GI 1, a first interlayer insulating film ILD 1, a second buffer layer BUF 2, a second gate insulating film GI 2, and a second interlayer insulating film ILD 2. A dry etching process may be performed to form the concave portion CONC in the plurality of insulating films. For example, the concave portion CONC may be formed by etching the second interlayer insulating film ILD 2 and the second gate insulating film GI 2. The concave portion CONC may be formed by further etching the insulating film formed under the second gate insulating film GI 2.A planarization layer may be formed on the concave portion CONC and the second interlayer insulating film ILD 2. The planarization layer may be an organic insulating film. The planarization layer may be exposed with a halftone mask and developed to fill the concave portion CONC with the planarization layer which is an organic insulating film. The planarization layer may be a first planarization layer PLN 1 or a second planarization layer PLN 2. The halftone mask may have a solid area and a halftone area. In forming the moisture prevention structure MPS illustrated in FIG. 14, the planarization layer may be, for example, the first planarization layer PLN 1. Further, the halftone mask may have a halftone region formed in a region corresponding to the concave portion CONC.On the first planarization layer PLN 1 and the plurality of insulating films, a metal layer MTL may be patterned. The metal layer MTL may be disposed in the order of the first layer M 1, the second layer M 2, and the third layer M 3. The exposed second layer M 2 of the metal layer MTL may be partially etched by performing a dry etching operation on the metal layer MTL.A second planarization layer PLN 2 and a bank BANK may be formed on a plurality of insulating films, respectively. An ashing process may be performed to allow the second planarization layer PLN 2 to be formed, and a developing process may be performed to allow a bank BANK to be formed.A portion of the first planarization layer PLN 1 formed in the concave portion CONC may be etched by an ashing process and a developing process to form an undercut region UCA. For example, the first planarization layer PLN 1 may be etched so that an undercut region UCA is formed inward below the metal layer MTL and the second buffer layer BUF 2 is exposed.By the dry etching process, the ashing process, and the developing process, the metal layer MTL may have a structure in which the second layer M 2 is recessed between the first layer M 1 and the third layer M 3, and the undercut region UCA may be formed under the metal layer MTL in the concave portion CONC.The light emitting layer EL and the cathode electrode CE may be formed sequentially. In this case, the light emitting layer EL may be interrupted at the side surface of the metal layer MTL and the undercut region UCA.A first encapsulation layer PAS 1 and a second encapsulation layer PAS 2 may be formed on the light emitting layer EL and the cathode electrode CE.Referring to FIG. 14, the light emitting layer EL may have different portions. Here, the light emitting layer EL includes a first portion FPEL, a second portion SPEL, and a third portion TPEL. In the plan view, the first portion FPEL overlaps with the display area DA. As shown, the first, second and third portions of the light emitting layer EL are spaced apart from each other. It can also be said that the first, second and third portions of the light emitting layer EL are separated from each other.Here, the second portion SPEL of the light emitting layer EL is located on the first metal layer M 1. The first metal layer M 1 extends further than a portion of the insulating films such as ILD 2, GI 2 in a first direction (e.g., in the transverse direction) to form an undercut region UCA. For example, the first metal layer M 1 extends further than a portion of the insulating films ILD 2, GI 2 to form the undercut region UCA.The third portion TPEL of the light emitting layer EL is disposed at a location adjacent to the undercut region UCA. In particular, the third portion TPEL of the light emitting layer EL is arranged below the second portion SPEL of the light emitting layer EL. For example, the third portion TPEL of the light emitting layer EL is seated on the concave portion CONC. While the third portion TPEL of the light emitting layer EL is spaced apart from the second portion SPEL of the light emitting layer EL, the third portion TPEL and the second portion SPEL overlap each other in a plan view.Similarly, the cathode electrode CE has different portions. Here, the cathode electrode CE includes a first portion FPCE, a second portion SPCE, and a third portion TPCE. In the plan view, the first portion FPCE of the cathode electrode CE overlaps with the display region DA. As shown, the first, second and third portions of the cathode electrode CE are spaced apart from each other. It can also be said that the first, second and third portions of the cathode electrode CE are separated from each other.Here, the second portion SPCE of the cathode electrode CE is located on the first metal layer M 1. More specifically, the second portion SPCE of the cathode electrode CE is located on a portion of the light emitting layer EL spaced apart from the second portion SPEL of the light emitting layer EL. The second portion SPCE of the cathode electrode CE is also on the third metal layer M 3. As shown in FIG. 14, the second portion SPCE of the cathode electrode CE is not in direct contact with the second portion SPEL of the light emitting layer EL.The third portion TPCE of the cathode electrode CE is disposed at a location adjacent to the undercut region UCA. More specifically, the third portion TPCE of the cathode electrode CE is located on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE and the second portion SPCE overlap each other in a plan view.FIG. 15 is an exemplary cross-sectional view of a display device 100 according to embodiments of the disclosure. More specifically, FIG. 15 is an exemplary cross-sectional view of portion A-B of FIG. 4 In the following description of the embodiments illustrated in FIG. 15, what is not particularly described may be the same as that described above with reference to FIGS. 1 to 14.Referring to FIG. 15, the display device 100 may include a moisture prevention structure MPS. The moisture prevention structure MPS may be disposed in the outer cut portion area OSTA. For example, the moisture preventing pattern MPS may be disposed between the camera hole CH and the bank pattern DAM. The moisture prevention structure MPS illustrated in FIG. 15 may be an external moisture prevention structure.The moisture preventing pattern MPS may include at least one undercut region UCA among a plurality of insulating films. The moisture preventing pattern MPS may include an undercut region positioned in the inorganic insulating film among the plurality of light emitting elements ED. The display device 100 illustrated in FIG. 15 may have the same configuration as the display device 100 illustrated in FIG. 5, except that the auxiliary metal layer AML is disposed between the inorganic insulating films in which the moisture preventing pattern MPS is positioned in the undercut region UCA.Referring to FIG. 15, the moisture preventing structure MPS may include an auxiliary metal layer AML in or below the undercut region UCA. The auxiliary metal layer AML may serve as an etch stop layer ESL in an etching of metal layers in forming the moisture prevention pattern MPS. In the description of the disclosure, the auxiliary metal layer AML and the etch stop layer ESL may have the same meaning.The auxiliary metal layer AML may include a metallic material. For example, the auxiliary metal layer AML may include, but is not limited to, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof. The auxiliary metal layer AML may include the same material as the first gate electrode GAT 1, the second gate electrode GAT 2, or the metal pattern TM. For example, the auxiliary metal layer AML may be formed of a Mo / Ti double layer or a single Mo layer.FIG. 16 is an exemplary cross-sectional view of a display device 100 according to embodiments of the disclosure. More specifically, FIG. 16 is an exemplary cross-sectional view of portion A-B of FIG. 4 In the following description of the embodiments illustrated in FIG. 16, what is not particularly described may be the same as that described above with reference to FIGS. 1 to 15.Referring to FIG. 16, the display device 100 may include a moisture prevention structure MPS. The moisture prevention structure MPS may be disposed in the internal cut-off portion area ISTA. For example, the moisture preventing pattern MPS may be disposed between the display area DA and the bank pattern DAM. The moisture prevention structure MPS illustrated in FIG. 16 may be an internal moisture prevention structure.The display device 100 illustrated in FIG. 16 may have the same configuration as the display device 100 illustrated in FIG. 6, except that the auxiliary metal layer AML is disposed between the inorganic insulating films in which the moisture preventing pattern MPS is positioned in the undercut region UCA.FIG. 17 is an exemplary cross-sectional view of a display device 100 according to embodiments of the disclosure. More specifically, FIG. 17 is an exemplary cross-sectional view of portion A-B of FIG. 4 In the following description of the embodiments illustrated in FIG. 17, all that is not described in detail may be consistent with the embodiments described above with reference to FIGS. 1-16.Referring to FIG. 17, the display device 100 may include two or more moisture prevention structures MPS. The moisture prevention structure MPS may be disposed in the outer cut-off portion area OSTA and the inner cut-off portion area ISTA. For example, the moisture preventing pattern MPS may be disposed between the display area DA and the bank pattern DAM while being disposed between the camera hole CH and the bank pattern DAM on one plane. The moisture prevention structure MPS illustrated in FIG. 17 may be an outer moisture prevention structure and an inner moisture prevention structure. The outer moisture preventing structure may also be referred to as a first moisture preventing structure FMPS, and the inner moisture preventing structure may also be referred to as a second moisture preventing structure SMPS.Referring to FIG. 17, the first moisture preventing pattern FMPS may be disposed between the camera hole CH and the bank pattern DAM in one plane. The dam structure DAM may be disposed between the first moisture preventing structure FMPS and the second moisture preventing structure SMPS. The second moisture preventing pattern SMPS may be disposed between the display area DA and the dam pattern DAM in a plane.The display device 100 illustrated in FIG. 17 may have the same configuration as the display device 100 illustrated in FIG. 7 except that the auxiliary metal layer AML is disposed between the inorganic insulating films in which the moisture preventing pattern MPS is positioned in the undercut region UCA.FIG. 18 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In the following description of the embodiments shown in Fig. 18, what is not particularly described may be the same as that described above with reference to Figs. 1 to 17.Referring to FIG. 18, the moisture preventing structure MPS may include at least one undercut region UCA among the plurality of insulating films. In the embodiments illustrated in FIG. 18, the undercut region UCA may be formed between the first buffer layer BUF 1 and the second interlayer insulating film ILD 2. The light-emitting layer EL can be interrupted in the region of the undercut region UCA. The plurality of insulating films illustrated in FIG. 18 may have the same configuration as the plurality of insulating films illustrated in FIG. 8, and thus will not be described repeatedly.The moisture preventing structure MPS may include a metal layer MTL positioned on the undercut region UCA. The metal layer MTL may have the same structure as the second source-drain electrode, for example. The light emitting layer EL may be interrupted at a side surface of the metal layer MTL. The metal layer MTL illustrated in FIG. 18 may have the same configuration as the metal layer MTL illustrated in FIG. 8, and thus will not be described repeatedly.The moisture prevention structure MPS may include an etch stop layer ESL positioned in or below the undercut region UCA. The etch stop layer ESL may also be referred to as auxiliary metal layer AML. Referring to FIG. 18, the etch stop layer ESL may be disposed between the plurality of insulating films positioned under the metal layer MTL. The etch stop layer ESL may be disposed between the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 disposed below the metal layer MTL, for example. The etch stop layer ESL may be disposed to extend further in a first direction (e.g., a transverse direction) than some of the insulating films forming the undercut region UCA. For example, the etch stop layer ESL may be disposed to extend further than a portion of the insulating film, such as the second interlayer insulating film ILD 2, on the second gate insulating film GI 2.The etch stop layer ESL may include a metallic material. The etch stop layer ESL may include, for example, a single layer or multiple layers of any one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof, but is not limited thereto. The etch stop layer ESL may include, for example, the same material as the second gate electrode GAT 2. The etch stop layer ESL may be formed of, for example, a Mo / Ti double layer or a Mo single layer.The etch stop layer ESL may prevent some insulation films disposed thereunder from being overetched in the etching of patterning the plurality of insulation films or patterning the metallic metal such as the anode electrode AE or the metal layer MTL in the process of forming the moisture prevention pattern MPS. In the embodiments illustrated in FIG. 18, the undercut region UCA may be formed in a structure in which a portion of the second interlayer insulating film ILD 2 disposed on the etch stop layer ESL is etched, but the etch stop layer ESL is not etched, for example.Referring to FIG. 18, the light emitting layer EL may be formed of a plurality of portions. As described above, the light emitting layer EL may include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The light emitting layer EL may further include a fourth portion FRPEL. As illustrated, the first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light emitting layer EL may be spaced apart from each other. In other words, the first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light emitting layer EL may be separated from each other.Here, the second portion SPEL of the light emitting layer EL may be disposed on the first layer M 1 of the metal layer MTL. The first layer M 1 of the metal layer MTL may extend further in a first direction (e.g., a transverse direction) than some of the insulating films to form the undercut region UCA. For example, the first layer M 1 of the metal layer MTL may extend further than a portion of the insulating film like the second interlayer insulating film ILD 2 to form the undercut region UCA.The third portion TPEL of the light emitting layer EL may be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may cover the upper surface of the etch stop layer ESL and simultaneously cover the side surface SSX of the insulating film with the second interlayer insulating film ILD 2. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane. That is, when viewed from a plan view, the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL overlap.The fourth portion FRPEL of the light emitting layer EL may be positioned on the metal layer MTL. The third layer M 3 of the metal layer MTL may extend further in a first direction (e.g., a transverse direction) than a portion of the second layer M 2 of the metal layer MTL. For example, the fourth portion FRPEL of the light emitting layer EL may be positioned on an extended portion of the third layer M 3 of the metal layer MTL. Both the fourth portion FRPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may be arranged on the first layer M 1 of the metal layer MTL, but the fourth portion FRPEL of the light emitting layer EL is arranged directly on the third layer M 3 of the metal layer MTL and the second portion SPEL of the light emitting layer EL is arranged directly on the first layer M 1 of the metal layer MTL.Further, the cathode electrode CE may include a plurality of portions. As described above, the cathode electrode CE may include a first portion FPCE, a second portion SPCE, and a third portion TPCE. The cathode electrode CE may further include a fourth portion FRPCE. As shown, the first portion FPCE, the second portion SPCE, the third portion TPCE, and the fourth portion FRPCE of the cathode electrode CE may be spaced apart from each other. Further, it can be said that the first portion FPCE, the second portion SPCE, the third portion TPCE, and the fourth portion FRPCE of the cathode electrode CE are separated from each other.Here, the second portion SPCE of the cathode electrode CE may be positioned on the first layer M 1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE may be positioned on the second portion SPEL of the light emitting layer EL.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane. That is, when viewed from a plan view, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE overlap.The fourth portion FRPCE of the cathode electrode CE may be positioned on the metal layer MTL. For example, the fourth portion FRPCE of the cathode electrode CE may be positioned on the fourth portion FRPEL of the light emitting layer EL. Both the fourth portion FRPCE of the cathode electrode CE and the fourth portion FRPEL of the light emitting layer EL may be spaced apart from the second layer M 2 of the metal layer MTL. Both the fourth portion FRPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may be positioned on the first layer M 1 of the metal layer MTL. Further, the fourth portion FRPCE of the cathode electrode CE may be in direct contact with the fourth portion FRPEL of the light emitting layer EL, and the second portion SPCE of the cathode electrode CE may be in direct contact with the second portion SPEL of the light emitting layer EL. Such a configuration is also shown in Figs. 19 to 23, and the same configuration will not be described repeatedly.FIG. 19 is an exemplary cross-sectional view of the moisture preventing structure MPS illustrated in FIGS. 15 to 17. In the following description of the embodiments shown in Figure 19, all that will not be described in detail may be the same as the embodiments described above with reference to Figures 1 to 18.Referring to FIG. 19, the moisture preventing structure MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 19 may have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 18, and thus will not be described repeatedly.Referring to FIG. 19, the etch stop layer ESL may be disposed between the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 disposed below the metal layer MTL. The etch stop layer ESL is disposed to extend further in a first direction (e.g., a transverse direction) than some of the insulating films forming the undercut region UCA, but the extended portion may have a relatively small thickness. In other words, in the portion extending further than some of the insulating films, an upper portion of the etch stop layer ESL may be etched in the etching process to form an etch stop residual film ESRL. The etch stop layer ESL may be formed of the same material as the second gate electrode GAT 2. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer, and the etch stop residual film ESRL may be a Ti residual film of the Mo / Ti double layer or a Mo residual film of the Mo single layer.The third portion TPEL of the light emitting layer EL may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may cover the side surface SSX of the insulating film including the second interlayer insulating film ILD 2 while covering the side surface of the etch stop layer ESL and the upper surface of the etch stop residual layer ESRL. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane. That is, in a plan view, the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane. That is, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plan view.FIG. 20 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In the following description of the embodiments shown in Figure 20, all that will not be described in detail may be the same as the embodiments described above with reference to Figures 1 to 19.Referring to FIG. 20, the moisture preventing structure MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, and an etch stop layer ESL. The plurality of insulating films and the metal layer MTL illustrated in FIG. 20 may have the same configuration as the plurality of insulating films and the metal layer MTL illustrated in FIG. 18, and thus will not be described repeatedly.Referring to FIG. 20, the undercut region UCA may be formed in a region including insulating films including an active buffer layer ABUF, a second interlayer insulating film ILD 2, and an etch stop layer ESL. The etch stop layer ESL may be disposed between the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 positioned under the metal layer MTL, for example. The etch stop layer ESL may include the same material as the second gate electrode GAT 2. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. In contrast to the etch stop layer ESL illustrated in FIG. 18 or 19, the etch stop layer ESL may not extend in a first direction (e.g., a transverse direction) and may be disposed between the insulating films. In other words, the etch stop layer ESL may be overetched during the etching process to be etched and removed together with the insulating films disposed under the etch stop layer ESL.Referring to FIG. 20, the third portion TPEL of the light emitting layer EL may be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may cover side surfaces of insulating films including the second buffer layer BUF 2, the first interlayer insulating film ILD 1, the first gate insulating film GI 1, and the first buffer layer BUF 1. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 21 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In describing the embodiments shown in FIG. 21, what is not described in detail may be the same as that described above with reference to FIGS. 1 to 20.Referring to FIG. 21, the moisture preventing structure MPS may include an undercut region UCA of at least one of the plurality of insulating films. In the embodiments illustrated in FIG. 21, the undercut region UCA may be formed on the second gate insulating film GI 2 toward the second interlayer insulating film ILD 2. The light-emitting layer EL can be interrupted in the undercut region UCA. The plurality of insulating films shown in FIG. 21 may have the same configuration as the plurality of insulating films in FIG. 18, and thus will not be described repeatedly.The moisture prevention structure MPS illustrated in FIG. 21 may be different from the moisture prevention structure MPS illustrated in FIG. 18 in terms of the shape of the undercut portion UCA. In the moisture prevention structure MPS illustrated in FIG. 21, the undercut region UCA may include a step portion STP.The step portion STP may denote a step formed when some insulating films and the etch stop layer ESL are not etched inward of the lower portion of the metal layer MTL in the undercut region UCA. For example, when the second interlayer insulating film ILD 2 is etched inward of the lower portion of the metal layer MTL, and an insulating film such as the second gate insulating film GI 2, the second buffer layer BUF 2, the first interlayer insulating film ILD 1, and the first gate insulating film GI 1, and the etch stop layer ESL are not etched inward of the lower portion of the metal layer MTL, the step portion STP may include the etch stop layer ESL, the second gate insulating film GI 2, the second buffer layer BUF 2, the first interlayer insulating film ILD 1, and the first gate insulating film GI 1.The etch stop layer ESL may include the same material as the second gate electrode GAT 2. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer.Referring to FIG. 21, the third portion TPEL of the light emitting layer EL is disposed on the step portion STP, and may cover a side surface SSX of the second interlayer insulating film ILD 2, an upper surface, and a side surface of the etch stop layer ESL, and may cover side surfaces of the second gate insulating film GI 2, the second buffer layer BUF 2, and the first interlayer insulating film ILD 1. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 22 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In the following description of the embodiments shown in Fig. 22, what is not described in detail may be the same as that described above with reference to Figs. 1 to 21.Referring to FIG. 22, the moisture preventing structure MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a step portion STP, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 22 may have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 21, and thus will not be described repeatedly.Referring to FIG. 22, the etch stop layer ESL is disposed to extend further in a first direction (e.g., a transverse direction) than some of the insulating films forming the undercut region UCA on the step portion STP, but the further extending part may have a relatively small thickness. In other words, in the portion extending further than some of the insulating films, an upper portion of the etch stop layer ESL may be etched in the etching process to form an etch stop residual film ESRL. The etch stop layer ESL may include the same material as the second gate electrode GAT 2. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer, and the etch stop residual film ESRL may be a Ti residual film of the Mo / Ti double layer or a Mo residual film of the Mo single layer.Referring to FIG. 22, the third portion TPEL of the light emitting layer EL may be disposed on the step portion STP to cover the side surface SSX of the second interlayer insulating film ILD 2 and the side surface SSY of the etch stop layer ESL, and to cover an upper surface and a side surface of the etch stop residual film ESRL. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 23 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In describing the embodiments shown in Fig. 23, what is not described in detail may be the same as that described above with reference to Figs. 1 to 22.Referring to FIG. 23, the moisture preventing structure MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a step portion STP, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 23 may have the same configuration as the plurality of insulating films and the metal layer MTL illustrated in FIG. 21, and thus will not be described repeatedly.Referring to FIG. 23, the undercut region UCA may be formed in a region including the insulating films including the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 and the etch stop layer ESL. The etch stop layer ESL may be disposed between the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 disposed below the metal layer MTL, for example. The etch stop layer ESL may include the same material as the second gate electrode GAT 2. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. In contrast to the etch stop layer ESL illustrated in FIG. 21 or 22, the etch stop layer ESL may not extend in a first direction (e.g., a lateral direction) on the step portion STP and may be disposed between the insulating films. In other words, the etch stop layer ESL may be overetched during the etching process so as to be partially etched and removed.Referring to FIG. 23, the third portion TPEL of the light emitting layer EL may be disposed on the step portion STP to cover the side surfaces SSX, SSY of the second interlayer insulating film ILD 2 and the etch stop layer ESL and to cover an upper surface UPZ and a side surface SSZ of the second gate insulating film GI 2. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 24 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In describing the embodiments shown in Fig. 24, what is not described in detail may be the same as that described above with reference to Figs. 1 to 23.Referring to FIG. 24, the moisture preventing structure MPS may include an undercut region UCA of at least one of the plurality of insulating films. In the embodiments illustrated in FIG. 24, the undercut region UCA may be formed between the first buffer layer BUF 1 and the second interlayer insulating film ILD 2. The light-emitting layer EL can be interrupted in the undercut region UCA. The plurality of insulating films illustrated in FIG. 24 may have the same configuration as the plurality of insulating films illustrated in FIG. 18, and thus will not be described repeatedly.The moisture prevention structure MPS may include a metal layer MTL disposed on the undercut region UCA. The metal layer MTL may have the same structure as the second source-drain electrode, for example. The light emitting layer EL may be interrupted at a side surface of the metal layer MTL. The metal layer MTL illustrated in FIG. 24 may have the same configuration as the metal layer MTL illustrated in FIG. 18, and thus will not be described repeatedly.The moisture prevention structure MPS may include an etch stop layer ESL positioned in or below the undercut region UCA. The etch stop layer ESL may also be referred to as auxiliary metal layer AML. Referring to FIG. 24, the etch stop layer ESL may be disposed between the plurality of insulating films under the metal layer MTL. For example, the etch stop layer ESL may be disposed between the first interlayer insulating film ILD 1 and the second buffer layer BUF 2 disposed below the metal layer MTL. The etch stop layer ESL may be disposed to extend further in a first direction (e.g., a transverse direction) than some of the insulating films forming the undercut region UCA. For example, the etch stop layer ESL may be disposed on the first interlayer insulating film ILD 1 such that a part of the insulating films extends further than the second buffer layer BUF 2, the second gate insulating film GI 2, and the second interlayer insulating film ILD 2.The etch stop layer ESL may include a metallic material. The etch stop layer ESL may include, for example, a single layer or multiple layers of one of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof, but is not limited thereto. The etch stop layer ESL may include, for example, the same material as the metal pattern TM. The etch stop layer ESL may be formed of, for example, a Mo / Ti double layer or a Mo single layer.The etch stop layer ESL may prevent some insulation films disposed thereunder from being overetched in the etching of patterning the plurality of insulation films or patterning the metallic metal such as the anode electrode AE or the metal layer MTL in the process of forming the moisture prevention pattern MPS. In the embodiments illustrated in FIG. 24, for example, the undercut region UCA may be formed in a structure in which a portion of the second buffer layer BUF 2, the second gate insulating film GI 2, and the second interlayer insulating film ILD 2 disposed on the etch stop layer ESL is etched, but the etch stop layer ESL is not etched.Referring to FIG. 24, the light emitting layer EL may have multiple portions. As described above, the light emitting layer EL may include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The light emitting layer EL may further include a fourth portion FRPEL. As illustrated, the first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light emitting layer EL may be spaced apart from each other. The first portion FPEL, the second portion SPEL, the third portion TPEL, and the fourth portion FRPEL of the light emitting layer EL may be separated from each other.Here, the second portion SPEL of the light emitting layer EL may be positioned on the first layer M 1 of the metal layer MTL. The first layer M 1 of the metal layer MTL may extend further in a first direction (e.g., a transverse direction) than some of the insulating films to form the undercut region UCA. For example, the first layer M 1 of the metal layer MTL may extend further than a portion of the insulating films such as the second buffer layer BUF 2, the second gate insulating film GI 2, and the second interlayer insulating film ILD 2 to form the undercut region UCA.The third portion TPEL of the light emitting layer EL may be positioned at a location adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may cover the upper surface of the etch stop layer ESL while covering the side surface of the insulating film including the second interlayer insulating film ILD 2, the second gate insulating film GI 2, and the second buffer layer BUF 2. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The fourth portion FRPEL of the light emitting layer EL may be positioned on the metal layer MTL. The third layer M 3 of the metal layer MTL may extend further in a first direction (e.g., a transverse direction) than a portion of the second layer M 2 of the metal layer MTL. For example, the fourth portion FRPEL of the light emitting layer EL may be positioned on an extended portion of the third layer M 3 of the metal layer MTL. Both the fourth portion FRPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may be positioned on the first layer M 1 of the metal layer MTL, but the fourth portion FRPEL of the light emitting layer EL is positioned directly on the third layer M 3 of the metal layer MTL and the second portion SPEL of the light emitting layer EL is positioned directly on the first layer M 1 of the metal layer MTL.Further, the cathode electrode CE may have a plurality of portions. As described above, the cathode electrode CE may include a first portion FPCE, a second portion SPCE, and a third portion TPCE. The cathode electrode CE may further include a fourth portion FRPCE. As shown, the first portion FPCE, the second portion SPCE, the third portion TPCE, and the fourth portion FRPCE of the cathode electrode CE may be spaced apart from each other. Further, it can be said that the first portion FPCE, the second portion SPCE, the third portion TPCE, and the fourth portion FRPCE of the cathode electrode CE are separated from each other.Here, the second portion SPCE of the cathode electrode CE may be positioned on the first layer M 1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE may be positioned on the second portion SPEL of the light emitting layer EL.The third portion TPCE of the cathode electrode CE may be positioned at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.The fourth portion FRPCE of the cathode electrode CE may be positioned on the metal layer MTL. For example, the fourth portion FRPCE of the cathode electrode CE may be positioned on the fourth portion FRPEL of the light emitting layer EL. Both the fourth portion FRPCE of the cathode electrode CE and the fourth portion FRPEL of the light emitting layer EL may be spaced apart from the second layer M 2 of the metal layer MTL. Both the fourth portion FRPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may be positioned on the first layer M 1 of the metal layer MTL. Further, the fourth portion FRPCE of the cathode electrode CE may be in direct contact with the fourth portion FRPEL of the light emitting layer EL, and the second portion SPCE of the cathode electrode CE may be in direct contact with the second portion SPEL of the light emitting layer EL. Such a configuration is also shown in Figs. 25 to 29 and will not be described repeatedly here.FIG. 25 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In describing the embodiments shown in Fig. 25, what is not described in detail may be the same as that described above with reference to Figs. 1 to 24.Referring to FIG. 25, the moisture preventing structure MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 25 may have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 24, and thus will not be described repeatedly.Referring to FIG. 25, the etch stop layer ESL may be disposed between the first interlayer insulating film ILD 1 and the second buffer layer BUF 2 positioning under the metal layer MTL. The etch stop layer ESL is disposed to extend further in a first direction (e.g., a transverse direction) than some of the insulating films forming the undercut region UCA, but the further extending portion may have a relatively small thickness. In other words, in the portion extending further than some of the insulating films, an upper portion of the etch stop layer ESL may be etched in the etching process to form an etch stop residual film ESRL. The etch stop layer ESL may include the same material as the metal pattern TM. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer, and the etch stop residual film ESRL may be a Ti residual film of the Mo / Ti double layer or a Mo residual film of the Mo single layer.The third portion TPEL of the light emitting layer EL may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may cover the side surface of the etch stop layer ESL and the upper surface of the etch stop residual film ESRL while covering the side surface of the insulating film including the second interlayer insulating film ILD 2, the second gate insulating film GI 2, and the second buffer layer BUF 2. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 26 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In describing the embodiments shown in Fig. 26, what is not described in detail may be the same as that described above with reference to Figs. 1 to 25.Referring to FIG. 26, the moisture preventing structure MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, and an etch stop layer ESL. The plurality of insulating films and the metal layer MTL illustrated in FIG. 26 may have the same configuration as the plurality of insulating films and the metal layer MTL illustrated in FIG. 24, and thus will not be described repeatedly.Referring to FIG. 26, the undercut region UCA may be formed in a region including insulating films including an active buffer layer ABUF to a second interlayer insulating film ILD 2 and an etch stop layer ESL. The etch stop layer ESL may be disposed between the first interlayer insulating film ILD 1 and the second buffer layer BUF 2 positioned under the metal layer MTL, for example. The etch stop layer ESL may include the same material as the metal pattern TM. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. In contrast to the etch stop layer ESL illustrated in FIG. 24 or 25, the etch stop layer ESL may not extend in a first direction (e.g., a transverse direction) and may be disposed between the insulating films. In other words, the etch stop layer ESL may be overetched during the etching process to be etched and removed together with the insulating films disposed under the etch stop layer ESL.Referring to FIG. 26, the third portion TPEL of the light emitting layer EL may be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may cover the side surface of the second buffer layer BUF 2 and the side surface of the etch stop layer ESL, and may cover the side surfaces of the insulating films including the first interlayer insulating film ILD 1, the first gate insulating film GI 1, and the first buffer layer BUF 1, and the upper surface of the first buffer layer BUF 1. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 27 is an exemplary cross-sectional view of the moisture preventing structure MPS illustrated in FIGS. 15 to 17. In describing the embodiments shown in Fig. 27, what is not described in detail may be the same as that described above with reference to Figs. 1 to 26.Referring to FIG. 27, the moisture preventing structure MPS may include an undercut region UCA of at least one of the plurality of insulating films. In the embodiments illustrated in FIG. 27, the undercut region UCA may be formed on the first interlayer insulating film ILD 1 toward the second interlayer insulating film ILD 2. The light-emitting layer EL can be interrupted in the undercut region UCA. The plurality of insulating films illustrated in FIG. 27 may have the same configuration as the plurality of insulating films illustrated in FIG. 24, and thus will not be described repeatedly.The moisture prevention structure MPS illustrated in FIG. 27 may be different from the moisture prevention structure MPS illustrated in FIG. 24 in terms of the shape of the undercut region UCA. In the moisture prevention structure MPS illustrated in FIG. 27, the undercut region UCA may include a step portion STP.The step portion STP may mean a step formed when some insulating films and the etch stop layer ESL are not etched inward of the lower portion of the metal layer MTL in the undercut region UCA. For example, when the second interlayer insulating film ILD 2, the second gate insulating film GI 2, and the second buffer layer BUF 2 are etched inward of the lower portion of the metal layer MTL, and an insulating film such as the first interlayer insulating film ILD 1 and the first gate insulating film GI 1, and the etch stop layer ESL are not etched inward of the lower portion of the metal layer MTL, the step portion STP may include the etch stop layer ESL, the first interlayer insulating film ILD 1, and the first gate insulating film GI 1.The etch stop layer ESL may be formed of the same material as the metal pattern TM. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer.Referring to FIG. 27, the third portion TPEL of the light emitting layer EL may be disposed on the step portion STP to cover side surfaces of the second interlayer insulating film ILD 2, the second gate insulating film GI 2, and the second buffer layer BUF 2 and to cover an upper surface and a side surface of the etch stop layer ESL. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 28 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In the following description of the embodiments shown in Fig. 28, what is not described in detail may be the same as that described above with reference to Figs. 1 to 27.Referring to FIG. 28, the moisture preventing pattern MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a step portion STP, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 28 may have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 24, and thus will not be described repeatedly.Referring to FIG. 28, the etch stop layer ESL is disposed to extend further in a first direction (e.g., a transverse direction) than some of the insulating films forming the undercut region UCA on the step portion STP, but the further extending part may have a relatively small thickness. In other words, in the portion extending further than some of the insulating films, an upper portion of the etch stop layer ESL may be etched in the etching process to form an etch stop residual film ESRL. The etch stop layer ESL may include the same material as the metal pattern TM. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer, and the etch stop residual film ESRL may be a Ti residual film of the Mo / Ti double layer or a Mo residual film of the Mo single layer.Referring to FIG. 28, the third portion TPEL of the light emitting layer EL may be disposed on the step portion STP to cover the side surface SS 1 of the second interlayer insulating film ILD 2, the side surface SS 2 of the second gate insulating film GI 2, the side surface SS 3 of the second buffer layer BUF 2, and the side surface SS 4 of the etch stop layer ESL, and to cover an upper surface USS and a side surface SSS of the etch stop residual film ESRL. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.While FIG. 28 does not explicitly show third portion TPEL of light emitting layer EL disposed on step portion STP covering side surface SS 1 of second interlayer insulating film ILD 2, in other embodiments, third portion TPEL of light emitting layer EL may cover side surface SS 1 of second interlayer insulating film ILD 2.The third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 29 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIGS. 15 to 17. In the following description of the embodiments shown in Fig. 29, what is not described in detail may be the same as that described above with reference to Figs. 1 to 28.Referring to FIG. 29, the moisture preventing pattern MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a step portion STP, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 29 may have the same configuration as the plurality of insulating films and the metal layer MTL illustrated in FIG. 24, and thus will not be described repeatedly.Referring to FIG. 29, the undercut region UCA may be formed in a region including the insulating films including the second interlayer insulating film ILD 2, the second gate insulating film GI 2, and the second buffer layer BUF 2, and the etch stop layer ESL. For example, the etch stop layer ESL may be disposed between the first interlayer insulating film ILD 1 and the second buffer layer BUF 2 positioned under the metal layer MTL. The etch stop layer ESL may include the same material as the metal pattern TM. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer. The light-emitting layer EL can be interrupted in the undercut region UCA. In contrast to the etch stop layer ESL illustrated in FIG. 27 or 28, the etch stop layer ESL may not extend in a first direction (e.g., a lateral direction) on the step portion STP and may be disposed between the insulating films. In other words, the etch stop layer ESL may be overetched during the etching process so as to be partially etched and removed.Referring to FIG. 29, the third portion TPEL of the light emitting layer EL may be disposed on the step portion STP to cover side surfaces of the second interlayer insulating film ILD 2, the second gate insulating film GI 2, the second buffer layer BUF 2, and the etch stop layer ESL and to cover an upper surface and a side surface of the first interlayer insulating film ILD 1. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.While FIG. 29 does not explicitly show the third portion TPEL of the light emitting layer EL disposed on the step portion STP covering the side surface SS 1 of the second interlayer insulating film ILD 2, in other embodiments, the third portion TPEL of the light emitting layer EL may cover the side surface SS 1 of the second interlayer insulating film ILD 2.The third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap in one plane.FIG. 30 is an exemplary cross-sectional view of a display device 100 according to embodiments of the disclosure. In describing the embodiments shown in Fig. 30, what is not particularly described may be the same as that described above with reference to Figs. 1 to 29.The display device according to the embodiments illustrated in FIG. 30 is different from the display device illustrated in FIGS. 15 to 17 in that the cut-off portion is not positioned in the outer cut-off portion area OSTA and the inner cut-off portion area ISTA, and the moisture preventing structure MPS is fully positioned. Moreover, the structure of the moisture preventing structure MPS is also different from the display device shown in FIGS. 15 to 17.Referring to FIG. 30, the display device 100 may include a moisture prevention structure MPS. The moisture prevention structure MPS may be disposed in the outer cut-off portion area OSTA and the inner cut-off portion area ISTA. For example, the moisture preventing pattern MPS may be disposed between the display area DA and the bank pattern DAM while being disposed between the camera hole CH and the bank pattern DAM on one plane.The moisture preventing pattern MPS may include at least one undercut region UCA among a plurality of insulating films. The moisture preventing pattern MPS may include an undercut region disposed in the insulating film disposed among the plurality of light emitting elements ED. The display device 100 illustrated in FIG. 30 may have the same configuration as the display device 100 illustrated in FIG. 13, except that the auxiliary metal layer AML is disposed between the insulating films in which the moisture preventing pattern MPS is positioned in the undercut region UCA.Referring to FIG. 30, the moisture preventing structure MPS may include an auxiliary metal layer AML in or below the undercut region UCA. The auxiliary metal layer AML may serve as an etch stop layer ESL in an etching of metal layers in forming the moisture prevention pattern MPS. In the description of the disclosure, the auxiliary metal layer AML and the etch stop layer ESL may have the same meaning.The auxiliary metal layer AML may include a metallic material. For example, the auxiliary metal layer AML may include, but is not limited to, a single layer or multiple layers of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof. The auxiliary metal layer AML may include the same material as the first gate electrode GAT 1, the second gate electrode GAT 2, or the metal pattern TM. For example, the auxiliary metal layer AML may be formed of a Mo / Ti double layer or a single Mo layer.FIG. 31 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIG. 30. Hereinafter, in describing the embodiments illustrated in FIG. 31, what is not particularly described may be the same as that described above with reference to FIGS. 1 to 31.Referring to FIG. 31, the moisture preventing structure MPS may include an undercut portion UCA. The undercut region UCA may be positioned in an organic insulating film disposed on the substrate SUB and below a plurality of light emitting elements. The undercut region UCA being positioned in the organic insulation layer may mean that at least one organic insulation layer is etched to form the undercut region UCA. The organic insulating film in which the undercut region UCA is formed may be, for example, at least one of the first planarization layer PLN 1 and the second planarization layer PLN 2. Although FIG. 31 shows embodiments in which the moisture preventing pattern MPS includes the first planarization layer PLN 1 and the undercut region UCA is formed in the first planarization layer PLN 1, embodiments of the disclosure are not limited to these embodiments. For example, the embodiments of the disclosure may include embodiments in which the moisture preventing pattern MPS includes one or more of the first planarization layer PLN 1 and the second planarization layer PLN 2, and the undercut region UCA is formed in one or more of the first planarization layer PLN 1 and the second planarization layer PLN 2.The moisture preventing pattern MPS may include a concave portion CONC of at least one of the plurality of insulating films. For example, the concave portion CONC may be disposed in an inorganic insulating film positioned on the substrate SUB and below a plurality of light emitting elements. That the concave portion CONC is disposed in the inorganic insulating film may mean that one or more of the inorganic insulating films are etched to form the concave portion CONC. The inorganic insulating film may be an inorganic insulating film disposed on the substrate SUB and under the light emitting element. The inorganic insulating film may be, for example, one or more of the first buffer layer BUF 1 and the second interlayer insulating film ILD 2, and the insulating films disposed between the two layers. FIG. 31 shows an embodiment in which the second interlayer insulating film ILD 2 has a concave portion CONC, but the embodiments of this disclosure are not limited to these embodiments.The undercut region UCA of the organic insulating film may be positioned in the concave portion CONC. A portion of the etch stop layer ESL disposed on the inorganic insulating film may be exposed by the undercut region UCA of the organic insulating film. For example, the etch stop layer ESL may be exposed through the undercut region UCA of the organic insulating film and the light emitting layer EL may be positioned on the exposed etch stop layer ESL.The moisture prevention structure MPS may include a metal layer MTL disposed on the undercut region UCA. The metal layer MTL may have the same structure as the second source-drain electrode, for example. The light emitting layer EL may be interrupted at a side surface of the metal layer MTL. The metal layer MTL illustrated in FIG. 31 may have the same configuration as the metal layer MTL illustrated in FIG. 14, and thus will not be described repeatedly.The moisture prevention structure MPS may include an etch stop layer ESL positioned in or below the undercut region UCA. The etch stop layer ESL may be an auxiliary metal layer AML. Referring to FIG. 31, the etch stop layer ESL may be disposed between the plurality of insulating films positioned under the metal layer MTL. The etch stop layer ESL may be disposed to be seated in the concave portion CONC. For example, the etch stop layer ESL may be disposed to extend to be seated in the concave portion CONC while being partially disposed between the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 disposed below the metal layer MTL. On a part of the etch stop layer ESL disposed in the concave portion CONC, an organic insulation layer may be disposed. For example, the etch stop layer ESL may be exposed through the undercut region UCA of the organic insulating film, and the light emitting layer EL may be positioned on the exposed etch stop layer ESL.The etch stop layer ESL may include a metallic material. The etch stop layer ESL may include, for example, a single layer or multiple layers of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof, but is not limited thereto. The etch stop layer ESL may include the same material as the second gate electrode GAT 2. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer.The etch stop layer ESL may prevent some insulation films disposed thereunder from being overetched in the etching process for forming the concave portion CONC by patterning the plurality of insulation films or the metal metal such as the anode electrode AE or the metal layer MTL in the process of forming the moisture preventing pattern MPS. In the embodiments illustrated in FIG. 31, for example, the undercut region UCA may be formed in a structure in which a portion of the second interlayer insulating film ILD 2 disposed on the etch stop layer ESL is etched but the etch stop layer ESL is not etched.Referring to FIG. 31, the light emitting layer EL may include a plurality of portions. The light emitting layer EL may include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The first portion FPEL of the light emitting layer EL may be positioned to overlap the emission area EA in one plane. As illustrated, the first portion FPEL, the second portion SPEL, and the third portion TPEL of the light emitting layer EL may be spaced apart from each other. The first portion FPEL, the second portion SPEL, and the third portion TPEL of the light emitting layer EL may be separated from each other.Here, the second portion SPEL of the light emitting layer EL may be positioned on the first layer M 1 of the metal layer MTL. The first layer M 1 of the metal layer MTL may extend further in a first direction (e.g., a transverse direction) than some of the insulating films, such as the second interlayer insulating film ILD 2, to form the undercut region UCA. For example, the first layer M 1 of the metal layer MTL may extend further than a portion of the insulating films, such as the second interlayer insulating film ILD 2, to form the undercut region UCA.The third portion TPEL of the light emitting layer EL may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may be positioned below the second portion SPEL of the light emitting layer EL. For example, the third portion TPEL of the light emitting layer EL may be seated on the concave portion CONC. The third portion TPEL of the light emitting layer EL may be disposed on the etch stop layer ESL disposed in the concave portion CONC. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.Further, the cathode electrode CE may have a plurality of portions. The cathode electrode CE may include a first portion FTCE, a second portion SPCE, and a third portion TPCE. The cathode electrode CE may be positioned such that the first portion FPCE overlaps the emission area EA in one plane. As shown, the first portion FFCE, the second portion SPCE, and the third portion TPCE of the cathode electrode CE may be spaced apart from each other. It can also be said that the first portion FPCE, the second portion SPCE and the third portion TPCE of the cathode electrode CE are separated from each other.Here, the second portion SPCE of the cathode electrode CE may be positioned on the first layer M 1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE may be positioned on a portion of the light emitting layer EL spaced apart from the second portion SPEL of the light emitting layer EL. The second portion SPCE of the cathode electrode CE may also be positioned on the third layer M 3 of the metal layer MTL. As illustrated in FIG. 31, the second portion SPCE of the cathode electrode CE may not be in direct contact with the second portion SPEL of the light emitting layer EL.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 32 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIG. 30. In describing the embodiments shown in Fig. 32, what is not particularly described may be the same as that described above with reference to Figs. 1 to 31.Referring to FIG. 32, the moisture preventing pattern MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a concave portion CONC, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC illustrated in FIG. 32 may have the same configuration as the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC illustrated in FIG. 31, and thus will not be described repeatedly.Referring to FIG. 32, the etch stop layer ESL may be disposed between the plurality of insulating films positioned under the metal layer MTL. The etch stop layer ESL may be disposed to be seated in the concave portion CONC. For example, the etch stop layer ESL may be disposed to extend to be seated in the concave portion CONC while being partially disposed between the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 positioned below the metal layer MTL. The portion extending to allow the etch stop layer ESL to sit in the concave portion CONC may have a relatively small thickness. In other words, the upper portion of the etch stop layer ESL seated on the concave portion CONC may be partially etched during the etching process to form an etch stop residual film ESRL. In this case, the etch stop residual film ESRL may be a Mo / Ti double layer Ti residual film or a Mo single layer Mo residual film. An organic insulating film may be disposed on a portion of the etch stop residual film ESRL disposed in the concave portion CONC. For example, the etch stop residual film ESRL may be exposed through the undercut region UCA of the organic insulating film, and the light emitting layer EL may be positioned on the exposed etch stop residual film ESRL.Referring to FIG. 32, the third portion TPEL of the light emitting layer EL may be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may be positioned below the second portion SPEL of the light emitting layer EL. For example, the third portion TPEL of the light emitting layer EL may be seated on the concave portion CONC. The third portion TPEL of the light emitting layer EL may be disposed on the etch stop residual film ESRL disposed in the concave portion CONC. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 33 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIG. 30. In describing the embodiments shown in Fig. 33, what is not particularly described may be the same as that described above with reference to Figs. 1 to 32.Referring to FIG. 33, the moisture preventing pattern MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a concave portion CONC, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC illustrated in FIG. 33 may have the same configuration as the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC illustrated in FIG. 31, and thus will not be described repeatedly.Referring to FIG. 33, the etch stop layer ESL may be disposed between the plurality of insulating films positioned under the metal layer MTL. For example, the etch stop layer ESL may be partially disposed between the second gate insulating film GI 2 and the second interlayer insulating film ILD 2 positioned on the metal layer MTL. In contrast to the etch stop layer ESL illustrated in FIG. 31 or 32, the etch stop layer ESL may be disposed between the insulating films without seating on the concave portion CONC. For example, the etch stop layer ESL may be overetched during the etching process so as to be partially etched and removed. In other words, the etch stop layer ESL may not be disposed in the concave portion CONC. The organic insulating film may be disposed on a portion of the second gate insulating film GI 2 disposed in the concave portion CONC. For example, the second gate insulating film GI 2 may be exposed through the undercut region UCA of the organic insulating film, and the light emitting layer EL may be positioned on the exposed second gate insulating layer GI 2.Referring to FIG. 33, the third portion TPEL of the light emitting layer EL may be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may be disposed below the second portion SPEL of the light emitting layer EL. For example, the third portion TPEL of the light emitting layer EL may be seated on the concave portion CONC. The third portion TPEL of the light emitting layer EL may be disposed on the second buffer layer BUF 2 disposed in the concave portion CONC. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 34 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIG. 30. In describing the embodiments shown in Fig. 34, what is not particularly described may be the same as that described above with reference to Figs. 1 to 33.Referring to FIG. 34, the moisture preventing pattern MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a concave portion CONC, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 34 may have the same configuration as the plurality of insulating films, the undercut region UCA, and the metal layer MTL illustrated in FIG. 31, and thus will not be described repeatedly.The moisture preventing pattern MPS may include a concave portion CONC of at least one of the plurality of insulating films. For example, the concave portion CONC may be disposed in an inorganic insulating film disposed on the substrate SUB and below a plurality of light emitting elements. That the concave portion CONC is disposed in the inorganic insulating film may mean that one or more of the inorganic insulating films are etched to form the concave portion CONC. The inorganic insulating film may be an inorganic insulating film disposed on the substrate SUB and under the light emitting element. The inorganic insulating film may be, for example, one or more of the first buffer layer BUF 1 and the second interlayer insulating film ILD 2, and the insulating films disposed between the two layers. FIG. 34 shows an embodiment in which the second interlayer insulating film ILD 2, the second gate insulating film GI 2, and the second buffer layer BUF 2 have a concave portion CONC, but the embodiments of the disclosure are not limited to these embodiments.The moisture prevention structure MPS may include an etch stop layer ESL disposed in or below the undercut region UCA. The etch stop layer ESL may be an auxiliary metal layer AML. Referring to FIG. 34, the etch stop layer ESL may be disposed between the plurality of insulating films disposed under the metal layer MTL. The etch stop layer ESL may be disposed to be seated in the concave portion CONC. For example, the etch stop layer ESL may be disposed to extend into the concave portion CONC while being partially disposed between the first interlayer insulating film ILD 1 and the second buffer layer BUF 2 positioned below the metal layer MTL. On a portion of the etch stop layer ESL disposed in the concave portion CONC, an organic insulating film may be disposed. For example, the etch stop layer ESL may be exposed through the undercut region UCA of the organic insulating film, and the light emitting layer EL may be disposed on the exposed etch stop layer ESL.The etch stop layer ESL may include a metallic material. For example, the etch stop layer ESL may include a single layer or multiple layers of molybdenum (Mo), copper (Cu), titanium (Ti), aluminum (Al), chromium (Cr), gold (Au), nickel (Ni), neodymium (Nd), and tungsten (W), or an alloy thereof, but is not limited thereto. The etch stop layer ESL may include the same material as the metal pattern TM. For example, the etch stop layer ESL may be formed of a Mo / Ti double layer or a Mo single layer.The etch stop layer ESL may prevent some insulation films disposed thereunder from being overetched in the etching process for forming the concave portion CONC by patterning the plurality of insulation films or patterning the metallic metal such as the anode electrode AE or the metal layer MTL in the process of forming the moisture prevention pattern MPS. In the embodiments illustrated in FIG. 34, for example, the undercut region UCA may be formed in a structure in which a portion of the second interlayer insulating film ILD 2, the second gate insulating film GI 2, and the second buffer layer BUF 2 disposed on the etch stop layer ESL is etched but the etch stop layer ESL is not etched.Referring to FIG. 34, the light emitting layer EL may have multiple portions. The light emitting layer EL may include a first portion FPEL, a second portion SPEL, and a third portion TPEL. The first portion FPEL of the light emitting layer EL may be positioned to overlap the emission area EA in one plane. As illustrated, the first portion FPEL, the second portion SPEL, and the third portion TPEL of the light emitting layer EL may be spaced apart from each other. The first portion FPEL, the second portion SPEL, and the third portion TPEL of the light emitting layer EL may be separated from each other.Here, the second portion SPEL of the light emitting layer EL may be positioned on the first layer M 1 of the metal layer MTL. The first layer M 1 of the metal layer MTL may extend further in a first direction (e.g., a transverse direction) than some of the insulating films, such as the second interlayer insulating film ILD 2, the second gate insulating film GI 2, and the second buffer layer BUF 2, to form the undercut region UCA. For example, the first layer M 1 of the metal layer MTL may extend further than some of the insulating films, such as the second interlayer insulating film ILD 2, the second gate insulating film GI 2, and the second buffer layer BUF 2, to form the undercut region UCA.The third portion TPEL of the light emitting layer EL may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may be disposed below the second portion SPEL of the light emitting layer EL. For example, the third portion TPEL of the light emitting layer EL may be seated on the concave portion CONC. The third portion TPEL of the light emitting layer EL may be disposed on the etch stop layer ESL disposed in the concave portion CONC. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.Further, the cathode electrode CE may have a plurality of portions. The cathode electrode CE may include a first portion FTCE, a second portion SPCE, and a third portion TPCE. The cathode electrode CE may be disposed such that the first portion FPCE overlaps the emission area EA in one plane. As shown, the first portion FFCE, the second portion SPCE, and the third portion TPCE of the cathode electrode CE may be spaced apart from each other. It can also be said that the first portion FPCE, the second portion SPCE and the third portion TPCE of the cathode electrode CE are separated from each other.Here, the second portion SPCE of the cathode electrode CE may be positioned on the first layer M 1 of the metal layer MTL. For example, the second portion SPCE of the cathode electrode CE may be positioned on a portion of the light emitting layer EL spaced apart from the second portion SPEL of the light emitting layer EL. The second portion SPCE of the cathode electrode CE may also be disposed on the third layer M 3 of the metal layer MTL. As illustrated in FIG. 34, the second portion SPCE of the cathode electrode CE may not be in direct contact with the second portion SPEL of the light emitting layer EL.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 35 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIG. 30. In describing the embodiments shown in Fig. 35, what is not particularly described may be the same as that described above with reference to Figs. 1 to 34.Referring to FIG. 35, the moisture preventing pattern MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a concave portion CONC, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC illustrated in FIG. 35 may have the same configuration as the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC illustrated in FIG. 34, and thus will not be described repeatedly.Referring to FIG. 35, the etch stop layer ESL may be disposed between the plurality of insulating films positioned under the metal layer MTL. The etch stop layer ESL may be disposed to be seated in the concave portion CONC. For example, the etch stop layer ESL may be disposed to extend to be seated in the concave portion CONC while being partially disposed between the first interlayer insulating film ILD 1 and the second buffer layer BUF 2 positioned below the metal layer MTL. The portion extending so that the etch stop layer ESL may be seated in the concave portion CONC may have a relatively small thickness. In other words, the upper portion of the etch stop layer ESL seated on the concave portion CONC may be partially etched during the etching process to form an etch stop residual film ESRL. In this case, the etch stop residual film ESRL may be a Mo / Ti double layer Ti residual film or a Mo single layer Mo residual film. An organic insulating film may be disposed on a portion of the etch stop residual film ESRL disposed in the concave portion CONC. For example, the etch stop residual film ESRL may be exposed through the undercut region UCA of the organic insulating film, and the light emitting layer EL may be positioned on the exposed etch stop residual film ESRL.Referring to FIG. 35, the third portion TPEL of the light emitting layer EL may be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may be positioned below the second portion SPEL of the light emitting layer EL. For example, the third portion TPEL of the light emitting layer EL may be seated on the concave portion CONC. The third portion TPEL of the light emitting layer EL may be disposed on the etch stop residual film ESRL disposed in the concave portion CONC. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.FIG. 36 is an exemplary cross-sectional view of the moisture prevention structure MPS illustrated in FIG. 30. In describing the embodiments shown in Fig. 36, what is not particularly described may be the same as that described above with reference to Figs. 1 to 35.Referring to FIG. 36, the moisture preventing pattern MPS may include a plurality of insulating films, an undercut region UCA, a metal layer MTL, a concave portion CONC, and an etch stop layer ESL. The plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC illustrated in FIG. 36 may have the same configuration as the plurality of insulating films, the undercut region UCA, the metal layer MTL, and the concave portion CONC illustrated in FIG. 34, and thus will not be described repeatedly.Referring to FIG. 36, the etch stop layer ESL may be disposed between the plurality of insulating films positioned under the metal layer MTL. For example, the etch stop layer ESL may be partially disposed between the first interlayer insulating film ILD 1 and the second buffer layer BUF 2 positioned under the metal layer MTL. In contrast to the etch stop layer ESL illustrated in FIG. 34 or 35, the etch stop layer ESL may be disposed between the insulating films without seating on the concave portion CONC. For example, the etch stop layer ESL may be overetched during the etching process to partially etch and remove it. In other words, the etch stop layer ESL may not be disposed in the concave portion CONC. The organic insulating layer may be disposed on a portion of the first interlayer insulating layer ILD 1 in the concave portion CONS. For example, the first interlayer insulating film ILD 1 may be exposed through the undercut region UCA of the organic insulating film, and the light emitting layer EL may be positioned on the exposed first interlayer insulating film ILD 1.Referring to FIG. 36, the third portion TPEL of the light emitting layer EL may be disposed at a position adjacent to the undercut region UCA. For example, the third portion TPEL of the light emitting layer EL may be positioned below the second portion SPEL of the light emitting layer EL. For example, the third portion TPEL of the light emitting layer EL may be seated on the concave portion CONC. The third portion TPEL of the light emitting layer EL may be disposed on the second buffer layer BUF 2 disposed in the concave portion CONC. The third portion TPEL of the light emitting layer EL may be spaced apart from the second portion SPEL of the light emitting layer EL, and the third portion TPEL of the light emitting layer EL and the second portion SPEL of the light emitting layer EL may overlap each other in a plane.The third portion TPCE of the cathode electrode CE may be disposed at a location adjacent to the undercut region UCA. For example, the third portion TPCE of the cathode electrode CE may be positioned on the third portion TPEL of the light emitting layer EL. While the third portion TPCE of the cathode electrode CE is spaced apart from the second portion SPCE of the cathode electrode CE, the third portion TPCE of the cathode electrode CE and the second portion SPCE of the cathode electrode CE may overlap each other in a plane.Since the display device includes the moisture preventing pattern MPS, the light emitting layer EL may be interrupted two or more times by the moisture preventing pattern MPS. Therefore, it is possible to effectively prevent defects that may occur when external moisture enters the display area through the camera hole.Embodiments of the disclosure described above will be briefly described below.Embodiments of the disclosure may provide a display device including a substrate including a display region in which a plurality of light emitting elements including a light emitting layer are positioned, a camera hole positioned in the display region, and a first non-display region positioned between the display region and the camera hole, a bank positioned in the first non-display region, a plurality of insulating films disposed on the substrate and positioned below the plurality of light emitting elements, and a moisture preventing structure disposed in the first non-display region and including an undercut region of at least one of the plurality of insulating films.In the display device according to the embodiments of the disclosure, the light emitting layer may be positioned to extend from the display region to a boundary of the camera hole, and the light emitting layer may be interrupted in the undercut region.In the display device according to embodiments of the disclosure, the display device may further include an interrupt portion disposed in the first non-display area.In the display device according to embodiments of the disclosure, the cut-off portion may include an inner cut-off portion disposed between the display region and the bank and an outer cut-off portion disposed between the bank and the camera hole.In the display device according to embodiments of the disclosure, the moisture preventing structure may include an inner moisture preventing structure positioned between the display region and the bank.In the display device according to embodiments of the disclosure, the moisture preventing structure may include an outer moisture preventing structure positioned between the bank and the camera hole.In the display device according to embodiments of the disclosure, the light emitting layer may be disposed to extend from the display region to a boundary of the camera hole. The moisture prevention structure may include a metal layer positioned on the undercut region. The light emitting layer is interrupted at a side surface of the metal layer.In the display device according to embodiments of the disclosure, the metal layer may include a first layer, a second layer positioned on the first layer, and a third layer disposed on the second layer. The second layer may have a shape that is more recessed than the first layer and the third layer.In the display device according to embodiments of the disclosure, the metal layer may include a first layer, a second layer positioned on the first layer, and a third layer positioned on the second layer. The first layer may have a shape that protrudes further than the third layer.In the display device according to embodiments of the disclosure, the metal layer may include a first layer, a second layer positioned on the first layer, and a third layer positioned on the second layer. The first layer and the third layer may be made of the same material, and the second layer may be made of a material different from that of the first layer and the third layer.In the display device according to embodiments of the disclosure, the moisture preventing structure may include a step portion positioned in the undercut region and positioned below the metal layer.In the display device according to embodiments of the disclosure, the undercut region may be positioned on an inorganic insulating film disposed on the substrate, and is disposed below the plurality of light emitting elements.In the display device according to embodiments of the disclosure, the undercut region may be disposed on an organic insulating film disposed on the substrate and is positioned below the plurality of light emitting elements.In the display device according to embodiments of the disclosure, the moisture preventing structure may include a concave portion of at least one of the plurality of insulating films. The undercut region may be positioned in the concave portion.In the display device according to embodiments of the disclosure, the moisture preventing structure may include a concave portion of at least one of the plurality of insulating films. The undercut region may be positioned on an organic insulating film disposed on the substrate, and is positioned below the plurality of light emitting elements.In the display device according to embodiments of the disclosure, the moisture preventing structure may include a concave portion of at least one of the plurality of insulating films. The concave portion may be positioned on an inorganic insulating film disposed on the substrate, and is disposed among the plurality of light emitting elements.In a display device according to embodiments of the disclosure, the moisture preventing structure may include a metal layer positioned on an undercut region, and may further include an auxiliary metal layer disposed below the metal layer and spaced apart from the metal layer.In the display device according to embodiments of the disclosure, the display device may further include an auxiliary metal layer. The moisture preventing structure may include a concave portion of at least one of the plurality of insulating films. The auxiliary metal layer may be disposed below the concave portion.A display device according to some embodiments includes:a display area and a non-display area adjacent to the display area;a camera hole adjacent to the non-display region, the camera hole being spaced apart from the display region in plan view;a light emitting element disposed to overlap with the display area in plan view;a dam structure between the camera hole and the display area in the plan view or the non-display area; anda moisture preventing structure adjacent to the dam structure, the moisture preventing structure including a plurality of metal layers.In some embodiments, the moisture prevention structure includes an undercut region adjacent to the plurality of metal layers.In some embodiments, the display device further includes a plurality of insulating films among the plurality of metal layers.In some embodiments, the plurality of metal layers includes a first metal layer and a second metal layer on the first metal layer.In some embodiments, a plurality of insulating films includes a first insulating film.In some embodiments, the first metal layer extends further than a portion of the first insulating film in a first direction to form the undercut region.In some embodiments, the light emitting element includes a light emitting layer and a first electrode on the light emitting layer.In some embodiments, the light emitting layer includes a first portion, a second portion, and a third portion. In this case, the first section, the second section and the third section are spaced apart from one another.In some embodiments, in the plan view, the first portion of the light emitting layer overlaps the display region, and the second portion of the light emitting layer overlies the first metal layer.In some embodiments, the third portion of the light emitting layer is disposed below the undercut region.In some embodiments, the third portion of the light emitting layer and the second portion of the light emitting layer overlap each other in plan view, and in plan view, the first portion of the light emitting layer does not overlap with the second portion and the third portion of the light emitting layer.In some embodiments, the light emitting element includes a light emitting layer and a first electrode on the light emitting layer. Here, the first electrode includes a first portion, a second portion, and a third portion.In some embodiments, the first portion, the second portion, and the third portion of the first electrode are spaced apart from each other. Here, the first portion of the first electrode overlaps with the display region in plan view, and the second portion of the first electrode is located on the first metal layer.In some embodiments, the light emitting element includes a light emitting layer and a first electrode on the light emitting layer.In some embodiments, the first electrode includes a first portion, a second portion, and a third portion, and the first portion, the second portion, and the third portion of the first electrode are spaced apart from each other.In some embodiments, in the plan view, the first portion of the first electrode overlaps the display region, and the third portion of the first electrode is disposed below the undercut region.In some embodiments, in the plan view, the third portion of the light emitting layer and the second portion of the light emitting layer overlap, and in the plan view, the first portion of the light emitting layer does not overlap with the second portion and the third portion of the light emitting layer.In some embodiments, the moisture preventing structure is disposed between the dam structure and the camera hole in plan view.In some embodiments, the dam structure is disposed between the moisture preventing structure and the camera hole in plan view.In some embodiments, the moisture prevention structure includes a first moisture prevention structure and a second moisture prevention structure. The first moisture preventing structure is disposed between the bank structure and the camera hole in a plan view, and the bank structure is disposed between the first moisture preventing structure and the second moisture preventing structure in a plan view.In the display device according to the embodiments of the disclosure, the display device may further include an auxiliary metal layer disposed below the plurality of metal layers of the first moisture prevention structure.In the display device according to embodiments of the disclosure, the display device may further include a second moisture preventing structure adjacent to the first moisture preventing structure, and an auxiliary metal layer disposed between the second moisture preventing structure and the first moisture preventing structure.In the display device according to embodiments of the disclosure, the auxiliary metal layer may overlap both the second moisture prevention structure and the first moisture prevention structure in plan view.In the display device according to embodiments of the disclosure, the display device may further include a second moisture preventing structure adjacent to and spaced apart from the first moisture preventing structure in plan view, and a first auxiliary metal layer and a second auxiliary metal layer spaced apart from the first auxiliary metal layer. The first auxiliary metal layer may overlap with the first moisture preventing structure in plan view, and the second auxiliary metal layer may overlap with the second moisture preventing structure.In the display device according to embodiments of the disclosure, the display device may further include at least one insulating layer between the plurality of metal layers and the auxiliary metal layer. The auxiliary metal layer may contact and overlap the at least one insulation layer in plan view.In the display device according to embodiments of the disclosure, the display device may further include a thin film transistor electrically connected to the light emitting element. The thin film transistor may include a gate electrode. The auxiliary metal layer and the gate electrode of the thin film transistor may be made of the same material.In the display device according to embodiments of the disclosure, the display device may further include a thin film transistor electrically connected to the light emitting element and including an active layer and a metal pattern disposed below the active layer to be spaced apart therefrom. The auxiliary metal layer and the metal pattern may include the same material.The various embodiments described above may be combined to obtain further embodiments.

Claims

A display device (100) comprising: a substrate (SUB) including a display region (DA) in which a plurality of light emitting elements (ED) including a light emitting layer (EL) are positioned, a camera hole (CH) disposed in the display region (DA), and a first non-display region (NDA1) disposed between the display region (DA) and the camera hole (CH); a bank (DAM) positioned in the first non-display region (NDA1); a plurality of insulating films (BUF1, GI1, ILD1, BUF2, GI2, ILD2) disposed on the substrate (SUB) and positioned below the plurality of light emitting elements (ED); and a moisture preventing structure (MPS) disposed in the first non-display region (NDA1), wherein the moisture preventing structure (MPS) includes an undercut region (UCA) of at least one of the plurality of insulating films (BUF1, GI1, ILD1, BUF2, GI2, ILD2).The display device (100) according to claim 1, wherein the light emitting layer (EL) is positioned to extend from the display area (DA) to a boundary of the camera hole (CH), and wherein the light emitting layer (EL) is interrupted in the undercut area (UCA).The display device (100) according to claim 1 or 2, further comprising an interruption portion (ST) positioned in the first non-display area (NDA1), wherein the interruption portion (ST) comprises: an inner interruption portion (IST) positioned between the display area (DA) and the bank (DAM); and an outer interruption portion (OST) positioned between the bank (DAM) and the camera hole (CH).The display device (100) according to any one of claims 1 to 3, wherein the moisture preventing structure (MPS) includes an inner moisture preventing structure positioned between the display area (DA) and the bank (DAM).The display device (100) according to any one of claims 1 to 4, wherein the moisture preventing structure (MPS) includes an outer moisture preventing structure positioned between the bank (DAM) and the camera hole (CH).The display device (100) according to any one of claims 1 to 5, wherein the light emitting layer (EL) is positioned to extend from the display area (DA) to a boundary of the camera hole (CH), wherein the moisture preventing pattern (MPS) includes a metal layer (MTL) positioned on the undercut area (UCA), and wherein the light emitting layer (EL) is interrupted at a side surface of the metal layer (MTL).The display device (100) according to claim 6, wherein the metal layer (MTL) includes a first layer (M1), a second layer (M2) positioned on the first layer (M1), and a third layer (M3) positioned on the second layer (M2), wherein either the second layer (M2) has a shape that is more recessed than the first layer (M1) and the third layer (M3), or the first layer (M1) has a shape that is more protruding than the third layer (M3).The display device (100) according to claim 6 or 7, wherein the metal layer (MTL) includes a first layer (M1), a second layer (M2) positioned on the first layer (M1), and a third layer (M3) positioned on the second layer (M2), and wherein the first layer (M1) and the third layer (M3) are made of the same material, and the second layer (M2) is made of a material different from that of the first layer (M1) and the third layer (M3).The display device (100) according to any one of claims 6 to 8, wherein the moisture preventing structure (MPS) includes a step portion (STP) positioned in the undercut region (UCA) and below the metal layer (MTL).The display device (100) according to any one of claims 1 to 9, wherein the undercut region (UCA) is positioned on an insulating film disposed on the substrate (SUB) and positioned below the plurality of light emitting elements (ED), and wherein the insulating film is either an inorganic insulating film or an organic insulating film.The display device (100) according to any one of claims 1 to 10, wherein the moisture preventing pattern (MPS) includes a concave portion of at least one of the plurality of insulating films (BUF1, GI1, ILD1, BUF2, GI2, ILD2), and wherein the undercut region (UCA) is disposed in the concave portion.The display device (100) according to any one of claims 1 to 11, wherein the moisture preventing pattern (MPS) includes a concave portion of at least one of the plurality of insulating films (BUF1, GI1, ILD1, BUF2, GI2, ILD2), and wherein the undercut region (UCA) is disposed on an insulating film disposed on the substrate (SUB) and positioned below the plurality of light emitting elements (ED), and the insulating film is either an inorganic insulating film or an organic insulating film.The display device (100) according to any one of claims 1 to 12, further comprising an auxiliary metal layer (AML), wherein the moisture preventing pattern (MPS) comprises a concave portion of at least one of the plurality of insulating films (BUF1, GI1, ILD1, BUF2, GI2, ILD2), and wherein the auxiliary metal layer (AML) is disposed below the concave portion.A display device (100) comprising: a display area (DA) and a non-display area (NDA1) adjacent to the display area (DA); a camera hole (CH) adjacent to the non-display area (NDA1), the camera hole (CH) being spaced apart from the display area (DA) in a plan view; a light emitting element (EL) disposed to overlap with the display area (DA) in the plan view; a bank structure (DAM) in the non-display area (NDA); a first moisture preventing structure (MPS) adjacent to the dam structure (DAM), the first moisture preventing structure (MPS) including a plurality of metal layers (M1, M2, M3).The display device (100) of claim 14, further comprising an auxiliary metal layer disposed below the plurality of metal layers (M1, M2, M3) of the first moisture preventing structure (MPS).The display device (100) of claim 14, further comprising: a second moisture preventing structure (MPS) adjacent to the first moisture preventing structure (MPS); and an auxiliary metal layer disposed between the second moisture preventing structure (MPS) and the first moisture preventing structure (MPS).The display device (100) according to claim 16, wherein the auxiliary metal layer overlaps both the second moisture preventing pattern (MPS) and the first moisture preventing pattern (MPS) in plan view.The display device (100) according to claim 14, further comprising: a second moisture preventing structure (MPS) adjacent to and spaced apart from the first moisture preventing structure (MPS) in the plan view; and a first auxiliary metal layer and a second auxiliary metal layer spaced apart from the first auxiliary metal layer, wherein in the plan view, the first auxiliary metal layer overlaps with the first moisture preventing structure (MPS) and the second auxiliary metal layer overlaps with the second moisture preventing structure (MPS).The display device (100) of claim 15, further comprising at least one insulation layer between the plurality of metal layers (M1, M2, M3) and the auxiliary metal layer, and wherein the auxiliary metal layer contacts and overlaps the at least one insulation layer in plan view.The display device (100) according to claim 19, further comprising a thin film transistor (T1) electrically connected to the light emitting element (ED), wherein the thin film transistor (T1) comprises a gate electrode (GAT2), wherein the auxiliary metal layer and the gate electrode (GAT2) of the thin film transistor (T1) are made of the same material.

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