LIGHT-EMITTING DISPLAY DEVICE

Abstract

A light-emitting display device includes a substrate having a drive circuit in each of sub-pixels, an insulating layer provided on the drive circuit, a reflective electrode disposed in the insulating layer and connected to the drive circuit, a trench provided in the insulating layer while being adjacent to the reflective electrode, and a light-emitting element including an anode. The anode can overlap with the reflective electrode and contact the reflective electrode in an interior space of the trench.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2024-0028397, filed in the Republic of Korea on February 27, 2024. BACKGROUND area

[0002] The disclosure relates to a light-emitting display device, and more particularly to a light-emitting display device that can achieve an improvement in the aperture ratio while preventing generation of a lateral leakage current. Discussion of the related field

[0003] A display device presents an image to a user. For this purpose, the display device may contain light-emitting elements.

[0004] Each of the light-emitting elements may be connected to a lower circuit including a transistor provided on a substrate for driving it.

[0005] Recent display devices are used for various applications. As an example of such applications, a method has been proposed in which a display device is placed near the user's eyes. In this case, pixels should be arranged in a small area corresponding to the eye, therefore, high resolution is required. High luminance is also required for a clear display. For this purpose, research is being conducted to develop a display device that has both high resolution and high luminance. SUMMARY OF REVELATION

[0006] Accordingly, the disclosure is directed to a light emitting display device that substantially obviates one or more problems due to limitations and disadvantages of the related art.

[0007] An object of the disclosure is to provide a light-emitting display device that can prevent generation of a lateral leakage current between adjacent sub-pixels in a high-resolution structure, wherein light-emitting elements are driven by a low current.

[0008] Another object of the disclosure is to provide a light-emitting display device having an improved aperture ratio by changing a connection structure to a drive circuit.

[0009] Another object of the disclosure is to provide a light-emitting display device that can achieve expressing low gray levels of a sub-pixel without being affected by driving another sub-pixel adjacent to the previous sub-pixel.

[0010] Another object of the disclosure is to provide a light-emitting display device that can achieve process optimization.

[0011] Another object of the disclosure is to provide a light-emitting display device having effects of reduced power consumption, high efficiency and high luminance, thereby having sustainability.

[0012] The object is achieved by the features of the independent claims. Preferred embodiments are specified in the dependent claims.

[0013] To achieve these objects and other advantages, and in accordance with the purpose of the disclosure embodied and broadly described herein, a light-emitting display device includes a substrate including a driving circuit in each of sub-pixels, an insulating layer provided on the driving circuit, a reflective electrode disposed in the insulating layer and connected to the driving circuit, a trench provided in the insulating layer while being adjacent to the reflective electrode, and a light-emitting element including an anode overlapping with the reflective electrode and contacting the reflective electrode in an interior of the trench.

[0014] In one or more embodiments, the anode can contact the reflective electrode at at least one sidewall of the trench. Preferably, it connects the anode to one sidewall of a trench and another sidewall of an adjacent trench.

[0015] In one or more embodiments, the trench may have a bottom surface or a bottom surface located at a lower level than the reflective electrode. Or, all bottom surfaces of the trenches may be deeper than all reflective electrodes.

[0016] In one or more embodiments, the reflective electrode may include a contact that contacts the drive circuit in an emission area of ​​the sub-pixel corresponding thereto.

[0017] In one or more embodiments, the reflective electrode may contact the sidewall of the trench.

[0018] In one or more embodiments, the trench may have a greater width at a lower portion of the trench than at an upper portion of the trench.

[0019] In one or more embodiments, the reflective electrode may be disposed in the insulation layer while having a vertical phase that is different from a vertical phase of another reflective electrode in an adjacent sub-pixel.

[0020] In one or more embodiments, the trench may have a bottom surface disposed below one of the reflective electrodes having a deepest vertical phase in the insulation layer.

[0021] In one or more embodiments, the reflective electrode may be disposed in the insulation layer while having a vertical phase that is different from a vertical phase of another reflective electrode in an adjacent sub-pixel.

[0022] In one or more embodiments, the trench may have a bottom surface disposed below one of the reflective electrodes having a deepest vertical phase in the insulation layer and has a greater width at its lower part than at its upper part.

[0023] In one or more embodiments, the anode at the sidewall of the trench may be separated from an anode material at a bottom surface of the trench.

[0024] In one or more embodiments, the anode may contact a top surface of the reflective electrode in a portion of a bottom surface of the trench.

[0025] In one or more embodiments, the anode may extend to the sidewall of the trench and the bottom surface of the trench from an emitting surface of the sub-pixel corresponding thereto.

[0026] In one or more embodiments, the light-emitting element may comprise an intermediate layer and a cathode on the anode.

[0027] In one or more embodiments, the intermediate layer may comprise stacks separated by a charge generation layer.

[0028] In one or more embodiments, each of the stacks may comprise a hole transport layer, an emission layer, and an electron transport layer.

[0029] In one or more embodiments, the light-emitting display device may include a fence that overlaps a portion of the anode disposed at a sidewall of the trench.

[0030] In one or more embodiments, the light-emitting display device may comprise an encapsulation layer and / or a color filter disposed on the light-emitting element.

[0031] In one or more embodiments, a portion of the anode disposed at a sidewall of the trench may contact the interlayer.

[0032] In one or more embodiments, the drive circuit may comprise at least one transistor.

[0033] In one or more embodiments, the substrate may comprise silicon and may be used as the active material.

[0034] In one or more embodiments, the at least one transistor may include a first source / drain region and a second source / drain region provided in the substrate comprising silicon; a gate electrode disposed on the substrate between the first source / drain region and the second source / drain region; and a first source / drain electrode and a second source / drain electrode each disposed on opposite sides of the gate electrode while connected to the first and second source / drain regions. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of the application, illustrate one or more embodiments and, together with the description, serve to explain the principle of the disclosure; in the drawings: Fig. 1 is a diagram schematically showing a light-emitting display device of an embodiment; Fig. 2 is a circuit diagram showing a circuit of a sub-pixel of Fig. 1 shows an embodiment; Fig. 3 is a plan view showing a light-emitting display device of a first embodiment of the disclosure; Fig. 4 is a cross-sectional view taken along the line II' in Fig. 3 was taken, according to the first embodiment; Fig. 5 is a cross-sectional view taken along the line II-II' in Fig. 3 was taken; Fig. 6A to Fig. 6C are cross-sectional views showing various examples of trenches of an embodiment; Fig. 7A, Fig. 7B are sectional views each showing different shapes of a light-emitting element of an embodiment; Fig. 8 is a cross-sectional view taken along the line II' in Fig. 3, a second embodiment; Fig. 9 is a cross-sectional view taken along the line II-II' in Fig. 3 was taken, according to the second embodiment; Fig. 10 is a cross-sectional view taken along the line II' in Fig. 3, according to a third embodiment and Fig. 11 is a cross-sectional view taken along the line II-II' in Fig. 3 was taken, according to the third embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0036] Reference will now be made in detail to preferred embodiments of the disclosure, examples of which are illustrated in the accompanying drawings. Where possible, the same reference numerals are used throughout the drawings to refer to the same or similar parts. In the following description of the disclosure, detailed descriptions of well-known functions and configurations incorporated herein are omitted where they may obscure the subject matter of the disclosure. The names of elements used in the following description are chosen for clarity of description of the disclosure and may differ from the names of elements of actual products.

[0037] The shapes, sizes, ratios, angles, numbers, and the like illustrated in the drawings to describe various exemplary embodiments of the disclosure are provided merely by way of example. The disclosure is not limited to the illustrations in the drawings.

[0038] Throughout the disclosure, where terms such as "including," "having," "comprising," and the like are used, one or more components may be added unless a term such as "merely" is used. As used herein, the term "and / or" includes a single associated listed item and any combination of two or more of the associated listed items.

[0039] For example, an expression such as "at least one of," when preceding a list of elements, may modify the entire list of elements and need not modify the individual elements of the list. The expression "at least one" should be understood to include all combinations of one or more of the associated listed elements. For example, the meaning of "at least one of a first element, a second element, and a third element" includes the combination of all three listed elements, combinations of any two of the three elements, and each of the first element, the second element, and the third element.

[0040] The terminology used herein is for the purpose of describing specific aspects and is not intended to limit the disclosure. As used herein, "a" and "an" are intended to include multiple elements when used to describe one item in the singular form. It is intended that an item described in the singular form includes multiple elements, and vice versa, unless the context clearly indicates otherwise.

[0041] When designing a component or numerical value, the component or numerical value shall be designed as including a range of error or tolerance, even if there is no explicit description of such a range of error or tolerance.

[0042] In describing the various exemplary embodiments of the disclosure, where the positional relationship between two elements is described using terms such as "on," "over," "under," and "adjacent," at least one intervening element may be present between the two elements unless "immediately," "directly," or "nearly" is used. It will further be understood that when an element or layer is referred to as being "connected to" or "coupled to" another element or layer, it may be directly connected or coupled to the another element or layer, or one or more intervening elements or layers may be present.

[0043] In describing the various exemplary embodiments of the disclosure, when terms such as "after," "subsequent," "next," and "before" are used to describe the temporal relationship between two events, another event may occur therebetween unless a more limiting term such as "exactly," "immediately," or "directly" is used.

[0044] When describing the various exemplary embodiments of the disclosure, terms such as "first" and "second" may be used to describe a variety of components. These terms are intended to distinguish the same or similar components from one another, not to limit the components. Accordingly, throughout the disclosure, a "first" component may be the same as a "second" component in the technical concept of the disclosure unless explicitly stated otherwise. Furthermore, the term "may" fully encompasses all meanings and coverages of the term "could."

[0045] Features of various embodiments of the disclosure may be partially or entirely coupled or combined with one another, and may interact and be technically controlled differently, as will be readily understood by those skilled in the art. The embodiments of the disclosure may be practiced independently of one another or may be practiced together in an interdependent relationship.

[0046] As used herein, the term "doped" layer refers to a layer that includes a first material and a second material (e.g., n-type and p-type materials, or organic and inorganic substances) that has physical properties different from the first material. In addition to differences in properties, the first and second materials may also differ in their amounts in the doped layer. For example, the host material may be a major component, while the dopant may be a minor component. The first material makes up a majority of the weight of the doped layer. The second material may be added in an amount of less than 30 wt.% based on a total weight of the first material in the doped layer.A "doped" layer may be a layer used to distinguish a host material from a dopant of a particular layer, taking into account the weight ratio. For example, if all the materials constituting a particular layer are organic materials, at least one of the materials constituting the layer is n-type, and the other is p-type, then if the n-type material is present in an amount of less than 30 wt%, or if the p-type material is present in an amount of less than 30 wt%, the layer is considered a "doped" layer.

[0047] Furthermore, the term "undoped" refers to layers that are not "doped." For example, a layer may be an "undoped" layer if the layer contains a single material or a mixture containing materials that have the same properties as each other. For example, if at least one of the materials making up a particular layer is p-type and none of the materials making up the layer is n-type, the layer is considered an "undoped" layer. For example, if at least one of the materials making up a layer is an organic material and none of the materials making up the layer is an inorganic material, the layer is considered an "undoped" layer.

[0048] Unless otherwise defined, all terms, including technical and scientific terms, used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this inventive concept belongs. It is further understood that terms such as those defined in common dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant field and should not be interpreted in an idealized or overly formal sense unless expressly defined as such herein.

[0049] In this disclosure, an electroluminescence (EL) spectrum can be calculated by multiplying (a) a photoluminescence (PL) spectrum representative of the inherent properties of an emissive material such as a dopant or a host material included in an organic emission layer by (b) an outcoupling or emittance spectrum curve determined by the structural and optical properties of an organic light-emitting element including the thicknesses of organic layers such as an electron transport layer.

[0050] In the disclosure, a stack means a unitary structure including a hole-transport layer, a common layer including an electron-transport layer, and an emission layer disposed between the hole-transport layer and the electron-transport layer. The common layer may further include a hole-injection layer, an electron-blocking layer, a hole-blocking layer, an electron-injection layer, etc. Other organic layers or inorganic layers may be further included in the stack according to a structure or design of a light-emitting element.

[0051] A light-emitting display device according to various embodiments of the disclosure will now be discussed with reference to the drawings. All components of each light-emitting display device according to all embodiments of the disclosure are operatively coupled and configured.

[0052] Fig. 1 is a diagram schematically showing a light-emitting display device according to an embodiment of the disclosure. Fig. 2 is a circuit diagram showing a circuit of a sub-pixel of Fig. 1 according to an embodiment of the disclosure.

[0053] As in Fig. 1 and Fig. As shown in Figure 2, the light-emitting display device according to the embodiment of the disclosure may include a display panel DP. The display panel DP may generate an image to be provided to the user. For example, a plurality of pixel areas PA may be arranged in the display panel DP. Each pixel area PA may render different colors. For example, each pixel area PA may include a plurality of sub-pixels SP. Different signals may be applied to each sub-pixel SP via signal lines GL, DL, and PL. For example, the signal lines GL, DL, and PL may include gate lines GL each configured to apply a gate signal, data lines DL each configured to apply a data signal, and power supply lines PL each configured to supply a power supply voltage.

[0054] The gate lines GL may be electrically connected to a gate driver GD. The data lines DL may be electrically connected to a data driver DD. The gate driver GD and the data driver DD may be controlled by a timing control unit TC. For example, the gate driver GD may receive clock signals, reset signals, and a start signal from the timing control unit TC, and the data driver DD may receive digital video data and a source timing signal from the timing control unit TC. The supply voltage supply lines PL may be electrically connected to a power unit PU.

[0055] The display panel DP may include an active area AA (or a display area) in which the pixel areas PA are arranged, and a bezel area BZ arranged outside the active area AA. The bezel area BZ may be arranged outside the pixel areas PA. For example, the active area AA may be surrounded by the bezel area BZ. The gate driver GD, the data driver DD, the timing control unit TC, and the power unit PU may be arranged outside the active area AA. For example, respective signal lines GL, DL, and PL may include areas arranged on the bezel area BZ. The gate driver GD and / or the data driver DD and / or the timing control unit TC and / or the power unit PU may be arranged on the bezel area BZ of the display panel DP.For example, the light-emitting display device according to the embodiment of the disclosure may be a gate-in-panel (GIP) type light-emitting display device, where the gate driver GD is directly formed on a substrate in the bezel area BZ. In this case, a GIP may include multiple transistors and multiple capacitors, and the transistors and capacitors included in the GIP may be fabricated using the same process as transistors arranged on the substrate in the active area AA.

[0056] As in Fig. As shown in Figure 2, each subpixel SP can emit light representing a specific color according to signals applied to it via signal lines GL, DL, and PL. For example, a drive circuit DC connected to a light-emitting element (cf. “300” in Fig. 4) is electrically connected, in each subpixel SP. The display panel DP may comprise a substrate (cf. “100” in Fig. 4) configured to carry the drive circuit DC of each sub-pixel SP and the light-emitting element 300.

[0057] The operation of the light-emitting element 300 arranged in each sub-pixel SP can be controlled by signals applied to the light-emitting element 300 via signal lines GL, DL and PL.

[0058] For example, the drive circuit DC of each sub-pixel SP may include a first transistor TR1, a second transistor TR2 and a storage capacitor Cst.

[0059] A first source / drain electrode (e.g., a drain electrode) of the first transistor TR1 is electrically connected to the data line DL, and a second source / drain electrode (e.g., a source electrode) of the first transistor TR1 is electrically connected to a gate electrode of the second transistor TR2. Here, a connection node between the first transistor TR1 and the second transistor TR2 is referred to as a first node N1.

[0060] The first transistor TR1 sends to the first node N1 a data signal supplied via the data line DL in response to a strobe signal supplied via the gate line GL.

[0061] The storage capacitor Cst is electrically connected between the first node N1 and a second node N2 and therefore charges a voltage applied to the first node N1.

[0062] A first source / drain electrode (e.g., a drain electrode) of the second transistor TR2 receives a high-level drive voltage EVDD via the power supply line PL, and a second source / drain electrode (e.g., a source electrode) is electrically connected to an anode of the light-emitting element 300. The second transistor TR2 can control an amount of drive current flowing through the light-emitting element 300 according to a voltage applied to its gate electrode.

[0063] The first transistor TR1 of each sub-pixel SP can transmit a data signal supplied to the data line DL to the second transistor TR2 of the same sub-pixel SP according to a gate signal applied to the gate line GL. For example, the first transistor TR1 of each sub-pixel SP can function as a switching transistor, and the second transistor TR2 of each sub-pixel SP can function as a drive transistor.

[0064] For example, the drive circuit DC of each sub-pixel SP can supply a drive current corresponding to a data signal to the light-emitting element 300 of the same sub-pixel SP according to a gate signal. The drive current supplied by the drive circuit DC of each sub-pixel SP can be maintained for one frame by the storage capacitor Cst of the same sub-pixel SP.

[0065] Hereinafter, a detailed configuration of the light-emitting display device according to embodiments of the disclosure will be described with reference to the accompanying drawings. First embodiment

[0066] Fig. 3 is a plan view showing a light-emitting display device of a first embodiment. Fig. Figure 4 is a cross-sectional view taken along line II' in Fig. 3 was taken. Fig. Figure 5 is a cross-sectional view taken along the line II-II' in Fig. 3 was taken.

[0067] As in Fig. 3 to Fig. 5, the light-emitting display device of the first embodiment, denoted by reference numeral “1000,” includes a substrate 100 having driving circuits (cf. “DC” in Fig. 2) (DC: TR1, TR2 and Cst) arranged at respective sub-pixels RSP, GSP and BSP, an insulating layer IN provided on the driving circuits DC (TR1, TR2 and Cst), and reflective electrodes 200R, 200G and 200B arranged in the insulating layer IN while being connected to the driving circuits DC, respectively.

[0068] The light-emitting display device 100 of the embodiment may further include one or more trenches TS provided in the insulation layer IN, while adjacent corresponding ones of the reflective electrodes 200R, 200G, and 200B and anodes 310 (310R, 310G, and 310B) overlap with the reflective electrodes 200R, 200G, and 200B while respectively contacting the reflective electrodes 200R, 200G, and 200B in the trenches TS or at an interior of the trenches TS.

[0069] A red subpixel RSP, a blue subpixel BSP and a green subpixel GSP may be arranged adjacent to each other on the substrate 100.

[0070] In respective subpixels RSP, GSP, and BSP, emission areas REA, BEA, and GEA may be defined in areas corresponding to the anodes 310 (310R, 310B, and 310G, respectively), and areas below the emission areas REA, BEA, and GEA may be defined as non-emission areas NEA. If fences 140 are provided at one or both edges of the anodes 310 (310R, 310G, and 310R, respectively), areas including areas of the fences 140 and the trenches TS may be non-emission areas.

[0071] The drive circuit DC, provided at each of the sub-pixels RSP, GSP, and BSP, includes a first transistor TR1 having a switching function, a second transistor TR2 configured to supply a drive current to the light-emitting element 300, and a storage capacitor Cst configured to provide a capacitance between the gate and source electrodes of the second transistor TR2 to maintain the drive current for one frame. Among the components of the drive circuit DC, the second transistor TR2 is connected to a corresponding one of the anodes 310 (310R, 310B, and 310G) of the light-emitting element 300.

[0072] Active layers of at least the first and second transistors TR1 and TR2 of the drive circuit DCs may use the substrate 100 to form the channel.

[0073] The substrate 100 may contain silicon and may be defined with a well region by doping it with an impurity, and therefore the substrate 100 itself can directly function as the active layers of the transistors. Accordingly, in the light-emitting display device of the embodiment, a wafer containing silicon can be used as the substrate 100, and the well region of the substrate 100 can be used as an active layer of a transistor, and therefore, it may be possible to omit a process of forming a separate active layer. Accordingly, there are advantages in terms of integration and process simplification, which is suitable for realizing fine sub-pixels.

[0074] Fig. 4 shows a part of the areas of the subpixels of Fig. 3, in which respective second transistors TR2 are formed. With reference to Fig. 4 shows a connection of the second transistors TR2 and the reflective electrodes 200R, 200G and 200B.

[0075] Adjacent subpixels RSP, GSP, and BSP are separated from each other by respective trenches TS. Areas of respective subpixels RSP, GSP, and BSP separated by the trenches TS can be used as the emission areas REA, GEA, and BEA in their entirety, or can be used as the emission areas REA, GEA, and BEA except for areas that overlap with the fences 140 covering the edges of the anodes 310R, 310G, and 310B.

[0076] In the light-emitting display device 100 of the embodiment, the anodes 310R, 310G, and 310B may be provided in the entirety of the sub-pixels RSP, GSP, and BSP on the insulating layer IN, and therefore, the entire area of ​​the anodes 310R, 310G, and 310B may be used as an emission area.

[0077] As in Fig. As shown in FIG. 4, in the light-emitting display device 1000 of the first embodiment, the anodes 310R, 310G, and 310B are not directly connected to respective second transistors TR2 arranged thereunder, but are connected to respective second transistors TR2 through via holes CTA, CTB, and CTC, respectively. The reflective electrodes 200R, 200G, and 200B extend below the anodes or between sidewalls of adjacent ones of the trenches TS, and therefore, connection between the reflective electrodes 200R, 200G, and 200B and the anodes 310R, 310G, and 310B can be achieved through the trenches TS having a great depth, instead of via holes. Therefore, the anodes are respectively electrically connected by means of the reflective electrodes arranged below the anodes.A single contact might be sufficient here, but the electrical connection is more reliable if the reflective electrode is connected to both downward-facing parts of the anode sides. The reflective electrodes of the subpixels are connected to the respective drive transistor TR2 of the subpixel via the vias CTA, CTB, and CTC.

[0078] Here, when the trenches TS have a structure having a small width W and a large depth, in a process of depositing a material of the anodes 310R, 310G, and 310B, each of the anodes 310R, 310G, and 310B need not be formed to extend to the lower surfaces of the corresponding trench TS located at a deep depth, or may be separated between the sidewall and the lower surface of the trench TS. In this case, the anodes 310R, 310G, and 310B, respectively, on the sidewalls of the trenches TS may be separated from the anode materials 310e on the lower surfaces of the trenches TS. Accordingly, when the depth of the trenches TS is large, as shown in Fig. 4 and Fig. As shown in Figure 5, separation of the anodes 310 (310R, 310G, and 310B) based on the subpixels RSP, GSP, and BSP according to the shape of the trenches TS can be achieved in the deposition process without using a separate patterning process. Typically, banks are used to separate the subpixels. However, in the invention, the use of banks is not required, since the trenches can provide electrical isolation of the subpixels.

[0079] In this case, each trench TS has a large depth compared to its width W. Therefore, the depth of the trench is greater than its width. Preferably, it is at least twice as deep as the width W.

[0080] For example, the width W of the trench TS may be 1 μm or less, preferably 0.5 μm or less, and more preferably 0.1 μm or less. The depth of the trench TS may be greater than the thickness of the insulating layer IN in which at least the reflective electrodes 200R, 200G, and 200B are formed. The thickness of the insulating layer IN may exceed 1 μm and may reach several tens of μm. Accordingly, the reflective electrodes 200R, 200G, and 200B are arranged in or on the insulating layer IN at the sub-pixels RSP, GSP, and BSP, while each having different vertical phases. The trenches TS may have bottom surfaces arranged below the reflective electrode 200R having a deepest vertical phase in the insulating layer IN. The reflective electrodes 200R, 200G and 200B of the sub-pixels adjacent to each other have different locations or levels in the insulation layer IN.Simply put, two adjacent subpixels have reflective electrodes at different levels in the insulation layer IN.

[0081] The light-emitting display device of the embodiment can achieve pattern separation on a sub-pixel basis through the trenches TS. Each trench TS has a greater depth in a normal direction of the substrate 100 than its length in a horizontal direction of an XY plane, which is a formation surface of the substrate 100. In this case, separation of the anodes 310R, 310G, and 310B on a sub-pixel basis can be possible through the trenches TS, and electrical connection between the sidewalls of the trenches TS and the reflective electrodes 200R, 200G, and 200B can be achieved in one anode formation process.

[0082] Accordingly, in the light-emitting display device of the embodiment, it may be possible to omit a process such as a via-hole formation process for connecting the anodes 310R, 310G, and 310B to respective second transistors arranged thereunder. By omitting the via holes to be connected to the anodes, it may be possible to prevent a decrease in aperture ratio and a decrease in luminous efficiency that occurs due to the design of the reflective electrodes to bypass contact hole areas.

[0083] Effects of the embodiment of the disclosure will be described in comparison with a structure in which an anode is directly connected to a transistor without forming a trench.

[0084] For example, in a light-emitting display device having a structure in which an anode is directly connected to a transistor without forming a trench, a reflective electrode should be removed from a connection area between the anode and the transistor for connecting the anode and the transistor. In this case, it is impossible to maintain a microcavity effect between the reflective electrode and a cathode in the area from which the reflective electrode is removed, and therefore, the luminous efficiency may be weakened. It may be difficult to use an area protruding from the reflective electrode for its connection to the transistor as an effective emitting area in a sub-pixel associated with it.Furthermore, greenhouse gases inevitably generate due to an etchant or the like consumed in the processes of forming a contact hole and patterning at the anode for connecting the anode and the transistor. Meanwhile, in a light-emitting display device configured to separate sub-pixels by fences covering the edges of anodes without forming trenches, it is impossible to prevent the generation of lateral current leakage caused by an interlayer using only the fences having a thin structure.

[0085] The light-emitting display device of the embodiment can solve or address the above-described problems / limitations in that the light-emitting display device includes a trench and a connection between an anode and a reflective electrode is achieved at a sidewall of the trench. In particular, when the anode and the reflective electrode have the same potential according to a connection between them, a parasitic voltage generated in a dielectric material between the anode and the reflective electrode can be removed.When the anode and the reflective electrode have the same potential according to a connection between them, a potential fluctuation of the anode having fluctuation characteristics due to electrical interference between the reflective electrode and the anode occurring in a reflective electrode structure arranged in the form of an island can be prevented.

[0086] Additionally, the trenches TS can enable separation of the intermediate layer 320 of the light-emitting element 300 on a sub-pixel basis. The intermediate layer 320 includes a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and an electron injection layer, and can be formed using a common mask for multiple sub-pixels. In a deposition process, at least a portion of the intermediate layer 320 is separated from areas around the trenches TS by structure separation holes such as the trenches TS, and therefore separation of the intermediate layer 320 on a sub-pixel basis is possible. The separation of the intermediate layer 320 is not illustrated in the figures.

[0087] In Fig. 4 and Fig. 5 shows an air gap AG in each trench TS. A trench TS is formed in the insulation layers IN and the anode material, extends into the trench TS, and covers at least a portion of the sidewalls of the trench TS. An air gap AG is formed in the trench TS between the sidewalls. The anode material does not extend to the bottom of the trench TS and does not electrically connect anodes of neighboring subpixels.

[0088] At least a portion of several layers constituting the interlayer 320 are separated between adjacent subpixels RSP, GSP, and BSP on opposite sides of the air gap AG, and therefore, an interlayer byproduct 320e separated from the interlayer 320 can remain on an anode material 310e at the bottom surface or bottom of the trench TS. As a result, a horizontally continuous structure of the interlayer 320 is interrupted among the subpixels, and therefore, independent driving on a subpixel basis is possible, and the generation of a lateral leakage current can be prevented.

[0089] As in Fig. 4 and Fig. 5, the reflective electrodes 200R, 200G, and 200B may be arranged at respective sub-pixels RSP, GSP, and BSP while occupying the entire area of ​​the sub-pixels RSP, GSP, and BSP under the trenches TS, and may be arranged to contact sidewalls of adjacent ones of the trenches TS.

[0090] In respective sub-pixels RSP, GSP and BSP, the reflective electrodes 200R, 200G and 200B are arranged to overlap with the anodes 310R, 310G and 310B, respectively, as seen in a plan view, and the reflective electrodes 200R, 200G and 200B and the anodes 310R, 310G and 310B have, at sidewalls of the trenches TS, side contacts CTLA, CTLB and CTLC, which contact the trenches TS arranged on their opposite sides and the trench TS arranged on its one side, respectively.

[0091] In the light-emitting display device of the embodiment, each groove TS may have a bottom surface located at a lower level than the reflective electrodes 200R, 200G, and 200B. The sub-pixels RSP, GSP, and BSP are required to have resonance distances according to different resonance conditions based on the colors of light emitted from the sub-pixels RSP, GSP, and BSP, respectively. Although the light-emitting elements 300 provided at respective sub-pixels RSP, GSP, and BSP may have the same structure including the anode 310 (310R, 310G, and 310B), the intermediate layer 320, and the cathode 330, it may be possible to adjust resonance distances corresponding to red, green, and blue, respectively, of the emitted light by adjusting vertical phases of the reflective electrodes 200R, 200G, and 200B arranged below the anode 310 to be different from each other.

[0092] In case of Fig. 4 and Fig. 5, for example, the first reflective electrode 200R is arranged in the red sub-pixels RSP at a position having a lowest vertical phase, the third reflective electrode 200B is arranged in the blue sub-pixel BSP at a position having a highest vertical phase, and the second reflective electrode 200G is arranged in the green sub-pixel GSP at a position between the vertical phases of the first and third reflective electrodes 200R and 200B.

[0093] The insulation layer IN includes, for example, a first insulation layer 125 configured to protect the second transistors TR2, a second insulation layer 130 configured to cover the first reflective electrode 200R provided on the first insulation layer 125, and a third insulation layer 132 configured to protect the second reflective electrode 200G provided on the second insulation layer 130.

[0094] In this case, the third reflective electrode 200B in the blue sub-pixel BSP may contact a lower surface of the third anode 310B.

[0095] The reflective electrodes 200R, 200G, and 200B of respective subpixels RSP, GSP, and BSP may include a material having a high reflectance. For example, the reflective electrodes 200 of respective subpixels RSP, GSP, and BSP may include a reflective metal such as aluminum (Al) or silver (Ag), or an alloy thereof. In the display device according to the embodiment, in addition to a facing electrode structure formed by the anodes 310 (310R, 310G, and 310B) and the cathode 330, the separate reflective electrodes 200R, 200G, and 200B are added to respective emission surfaces REA, GEA, and BEA, and the vertical phases of the reflective electrodes 200R, 200G, and 200B are arranged at positions where optimal microcavity effects are generated according to respective wavelengths in the sub-pixels RSP, GSP, and BSP. Accordingly, an improvement in light extraction efficiency can be achieved.

[0096] In respective sub-pixels RSP, GSP and BSP, light reflected by the cathode 330 in the light-emitting element 300 can be reflected again by the reflective electrodes 200R, 200G and 200B.

[0097] Distances between respective reflective electrodes 200 and respective anodes 310 in respective emission areas REA, BEA, and GEA of respective sub-pixels SP may differ from each other according to colors rendered by respective emission areas REA, BEA, and GEA. For example, the distance between the first reflective electrode 200R and the first anode 310R in the red emission area REA may be greater than the distance between the second reflective electrode 200G and the second anode 310G in the green emission area GEA. The distance between the second reflective electrode 200G and the second anode 310G in the green emission area GEA may be greater than the distance between the third reflective electrode 200B and the third anode 310B in the blue emission area BEA. For example, in the blue emission area BEA, the third reflective electrode 200B may directly contact the third anode 310B.Accordingly, in the light-emitting display device according to the embodiment of the disclosure, the range of wavelengths of light emitted from each of the emission surfaces REA, BEA, and GEA can be determined by a microcavity structure.

[0098] The red sub-pixel RSP corresponds to a longest wavelength of one of red, green, and blue and can therefore have a longest vertical resonance distance between the first reflective electrode 200R and the cathode 330, and the blue sub-pixel BSP corresponds to a shortest wavelength of one of red, green, and blue and can therefore have a shortest vertical resonance distance between the third reflective electrode 200B and the cathode 330.

[0099] The light-emitting element 300 includes a red emission layer, a green emission layer, and a blue emission layer at emission layers provided at the intermediate layer 320, and can therefore represent white light by a combination of colors of light emitted from the emission layers.

[0100] The light-emitting element 300 has the same shape in the red sub-pixel RSP, the green sub-pixel GSP, and the blue sub-pixel BSP, and therefore, the red sub-pixel RSP, the green sub-pixel GSP, and the blue sub-pixel BSP include the first to third reflective electrodes 200R, 200G, and 200B each having different vertical phases to enhance microcavity effects corresponding to respective wavelength colors.

[0101] In this case, the red sub-pixel RSP is set such that the vertical distance between the first reflective electrode 200R and the cathode 330 is proportional to a red wavelength, the green sub-pixel GSP is set such that the vertical distance between the second reflective electrode 200G and the cathode 330 is proportional to a green wavelength, and the blue sub-pixel BSP is set such that the vertical distance between the third reflective electrode 200B and the cathode 330 is proportional to a blue wavelength. Accordingly, microcavity effects corresponding to respective colors of radiated light can be obtained, and therefore, color reproducibility in respective sub-pixels can be improved without providing color filters 500R, 500G, and 500B.

[0102] In addition, when the third reflective electrode 200B and the third anode 310B contact each other in the blue sub-pixel BSP, the vertical distance between the third reflective electrode 200B and the cathode 330 is proportional to the blue wavelength, and therefore the light-emitting element 300 can have a resonance condition corresponding to blue.

[0103] The light-emitting display device 1000 according to each embodiment is a near-eye display device configured to be used in a state where it is adjacent to the eyes of a viewer. For example, the sub-pixels are densely arranged in the limited area of ​​the substrate 100. In the near-eye display device, the configuration of a light-emitting display device including a substrate in the form of glasses or a windshield display device is arranged near the viewer's eyes and can therefore express virtual reality (VR) or augmented reality (AR).Accordingly, in the near-eye display device, the size of the substrate should be as small as a few inches compared to the configuration of a display device configured to be used at a certain distance from the viewer's eyes, such as a portable phone, a television, or the like, and multiple sub-pixels should be densely arranged between the viewer's eyes. Accordingly, multiple sub-pixels should be densely arranged in the limited area of ​​the substrate for image display, and therefore the size of each sub-pixel is very small. Accordingly, in the small sub-pixels, their respective anodes should be small, and low-current driving should be performed. Even with low-current driving, the sub-pixels should also achieve high luminance expression.

[0104] With reference to Fig. 4, in the light-emitting display device according to the embodiment, the widths of the emission areas REA, BEA, and GEA of respective sub-pixels are a few µm or less, and the widths of the grooves TS between adjacent sub-pixels are 1 µm or less, and therefore the size of each sub-pixel is very small. Accordingly, light emission can be achieved using even a small drive current.

[0105] In the light-emitting display device according to the embodiment, connection between the light-emitting element 300 and respective drive circuits can be achieved through respective reflective electrodes 200R, 200G, and 200B extending to corresponding sidewalls of the trenches TS. The contact of respective reflective electrodes can contact the drive circuit in an emission area of ​​the sub-pixel corresponding to it.

[0106] In respective sub-pixels RSP, GSP, and BSP, the first reflective electrode 200R may be connected to the second transistor TR2 corresponding thereto through a contact hole CTA provided at the first insulating layer 125, the second reflective electrode 200G may be connected to the second transistor TR2 corresponding thereto through a contact hole CTB provided at the first insulating layer 125, and the third reflective electrode 200B may be connected to the second transistor TR2 corresponding thereto through a contact hole CTC provided at the first insulating layer 125.

[0107] The first to third reflective electrodes 200R, 200G, and 200B repeat reflection in an upward direction when light generated by the light-emitting element 300 is incident upon them after being emitted, and thus, resonance effects can be obtained. Surfaces of the first to third reflective electrodes 200R, 200G, and 200B extend in such a way that they are adjacent to the sidewalls of the trenches TS corresponding to them, and therefore, the entire formation surfaces of the first to third reflective electrodes 200R, 200G, and 200B can be utilized for resonance effects.

[0108] In the light-emitting display device according to the embodiment, the substrate 100 may be a wafer formed of a semiconductor material such as silicon.

[0109] At least a part of the drive circuit DC arranged in each of the sub-pixels RSP, GSP, and BSP, for example, an active layer functioning as a semiconductor of each transistor, can be formed in the substrate 100. Accordingly, in the light-emitting display device according to the embodiment, the density of the drive circuits DC formed in the respective sub-pixels SP can be improved. In the light-emitting display device of the embodiment, the process of forming the drive circuits DC of the respective sub-pixels RSP, GSP, and BSP can be simplified.

[0110] The second transistor TR2 of each of the sub-pixels RSP, GSP, and BSP can generate the drive current according to the data signal. For example, the second transistor TR2 of each of the sub-pixels RSP, GSP, and BSP can function as a drive transistor. The second transistor TR2 of each of the sub-pixels RSP, GSP, and BSP can include a well region 102w, a first source / drain region 102d, a second source / drain region 102s, a gate electrode 223, a first source / drain electrode 225, and a second source / drain electrode 227. For example, in each of the sub-pixels RSP, GSP, and BSP, the gate electrode 223 of the second transistor TR2 can be connected to one of the source / drain electrodes of the first transistor TR1 of Fig. 2, the second source / drain electrode 227 of the second transistor TR2 may be electrically connected to a power supply line PL corresponding to the same sub-pixel, and the first source / drain electrode 225 of the second transistor TR2 may be connected to a corresponding one of the anodes 310 (310R, 310G, and 310B).

[0111] The well region 102W and the first and second source / drain regions 102D and 102S may be formed in the substrate 100. For example, the well region 102W and the first and second source / drain regions 102D and 102S may be formed by a process of doping with conductive impurities. The well region 102W and the first and second source / drain regions 102D and 102S may contain conductive impurities of different types. For example, the well region 102W may contain an n-type impurity, and the first and second source / drain regions 102D and 102S may contain a p-type impurity. The first and second source / drain regions 102D and 102S may be formed in the well region 102W. For example, in the second transistor TR2, a portion of the well region 102w located between the first and second source / drain regions 102d and 102s may operate as a channel region.

[0112] Meanwhile, with reference to Fig. 4, the first transistor TR1 may be formed in the same process as the second transistor TR2. Accordingly, the first transistor TR1 may include a well region disposed in the substrate 100 and source / drain regions disposed in the well region, and the well region of the substrate 100 may be used as an active layer.

[0113] Thus, in the light-emitting display device according to the embodiment, a wafer containing silicon can be used as the substrate 100, and the well region of the substrate 100 can be used as an active layer of a transistor, thus making it possible to omit the process of forming a separate active layer. Accordingly, there are advantages in terms of integration and process simplification, which are suitable for realizing fine sub-pixels.

[0114] The first and second transistors TR1 and TR2 may be implemented to have different characteristics by doping the well region and the source / drain regions in the substrate 100 with different impurities. Alternatively, the first and second transistors TR1 and TR2 may be implemented to have different characteristics by using different shapes of the well region and the source / drain regions such that the widths / lengths of the channel regions of the first and second transistors TR1 and TR2 are different from each other.

[0115] The gate electrode 223 may be disposed on the substrate 100. The gate electrode 223 may be disposed between the first source / drain region 102d and the second source / drain region 102s. For example, the gate electrode 223 may overlap with the portion of the well region 102w that functions as a channel region. The gate electrode 223 may include a conductor material. For example, the gate electrode 223 may include a metal such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W). The gate electrode 223 may be spaced from the substrate 100. The gate electrode 223 may be insulated by including an insulating layer 110 between the gate electrode 223 and the substrate 100. For example, the portion of the well region 102w that operates as a channel region may have an electrical conductivity corresponding to a voltage applied to the gate electrode 223.

[0116] The first and second source / drain electrodes 225 and 227 may include a conductor material. For example, the first and second source / drain electrodes 225 and 227 may include a metal such as aluminum (Al), chromium (Cr), copper (Cu), molybdenum (Mo), titanium (Ti), or tungsten (W). The first and second source / drain electrodes 225 and 227 may include a material different from that of the gate electrode 223. The first and second source / drain electrodes 225 and 227 may be disposed on a layer different from that of the gate electrode 223. The first source / drain electrodes 225 may be electrically connected to the first source / drain region 102d, and the second source / drain electrodes 227 may be electrically connected to the second source / drain region 102s. The first source / drain electrode 225 may be insulated from the gate electrode 223.

[0117] The storage capacitor Cst of each sub-pixel SP can maintain a voltage applied to the gate electrode 223 of the second transistor TR2 of the same sub-pixel SP for one frame. For example, the storage capacitor Cst of each sub-pixel SP can be electrically connected to the gate electrode 223 and the second source / drain electrode 227 of the second transistor TR2 in the same sub-pixel SP. The storage capacitor Cst of each sub-pixel SP can have a stacked structure of capacitor electrodes. For example, the storage capacitor Cst of each sub-pixel SP can include a first capacitor electrode electrically connected to the gate electrode 223 of the same sub-pixel SP and a second capacitor electrode electrically connected to the second source / drain electrode 227 of the same sub-pixel SP.The storage capacitor Cst of each sub-pixel SP can be formed using a process of forming the first transistor TR1 and the second transistor TR2 in the same sub-pixel SP. For example, the first capacitor electrode of each sub-pixel SP can be arranged on the same layer as the gate electrode 223 of the same sub-pixel SP, and the second capacitor electrode of each sub-pixel SP can be arranged on the same layer as the second source / drain electrode 227 of the same sub-pixel SP, or can be formed to be integrated with the second source / drain electrode 227 of the same sub-pixel SP. Accordingly, in the light-emitting display device according to the embodiment of the disclosure, the efficiency of the process of forming the drive circuits DC in respective sub-pixels SP can be improved.

[0118] A plurality of insulation layers 110, 120, IN, and 140 for preventing unnecessary electrical connection may be disposed on the substrate 100. For example, a gate insulation layer 110, an interlayer insulation layer 120, an insulation layer IN, and fences 140 may be disposed on the substrate 100.

[0119] The gate insulation layer 110 may be disposed on the substrate 100. The gate insulation layer 110 may be disposed between the gate electrode 223 and the substrate 100, and therefore, the gate electrode 223 may be insulated from the well region 102w of the substrate 100 by the gate insulation layer 110.

[0120] For example, in each of the sub-pixels RSP, GSP, and BSP, an upper surface of the substrate 100 facing the gate electrode 223 of each transistor may be covered by the gate insulating layer 110. The gate insulating layer 110 may directly contact the upper surface of the substrate 100. The gate electrode 223 of each of the sub-pixels RSP, GSP, and BSP may be disposed on the gate insulating layer 110. The gate insulating layer 110 may include an insulating material. For example, the gate insulating layer 110 may include an inorganic insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx).

[0121] The interlayer insulation layer 120 may be disposed on the gate insulation layer 110. The first and second source / drain electrodes 225 and 227 of each of the sub-pixels RSP, GSP, and BSP may be insulated from the gate electrode 223 of the same one of the sub-pixels RSP, GSP, and BSP by the interlayer insulation layer 120. For example, the gate electrode 223 of each of the sub-pixels RSP, GSP, and BSP may be covered by the interlayer insulation layer 120. The first and second source / drain electrodes 225 and 227 of each of the sub-pixels RSP, GSP, and BSP may be disposed on the interlayer insulation layer 120. The interlayer insulation layer 120 may include an insulating material. For example, the interlayer insulation layer 120 may include an inorganic insulating material.

[0122] The insulation layer IN may be disposed on the insulation interlayer 120. The insulation layer IN may include first to third insulation layers 125, 130, and 132, which are used as formation surfaces of the first to third reflective electrodes 200R, 200G, and 200B, respectively. The first to third insulation layers 125, 130, and 132 are provided for planarization and include an inorganic insulation material or an organic insulation material. Silicon oxide (SiO x ), silicon nitride (SiN x ) or silicon oxynitride (SiN x O y ). The organic insulating material may contain acrylic resin and / or phenolic resin and / or polyimide resin and / or unsaturated polyester resin and / or polyamide resin and / or benzocyclobutene and / or polyphenylene resin and / or polyphenylene sulfide resin.

[0123] The first to third insulation layers 125, 130, and 132 of the insulation layer IN can remove steps formed by the drive circuits DC of respective sub-pixels RSP, GSP, and BSP.

[0124] The first and second source / drain electrodes 225 and 227 of each of the transistors TR1 and TR2 in each of the sub-pixels RSP, GSP and BSP may be covered by the first insulation layer 125.

[0125] An upper surface of each of the first to third insulating layers 125, 130, and 132 is flat, and therefore the first to third reflective electrodes 200R, 200G, and 200B may be disposed on the flat upper surfaces of the first to third insulating layers 125, 130, and 132, respectively.

[0126] The first to third insulating layers 125, 130, and 132 may contain an organic insulating material or an inorganic insulating material. The first to third insulating layers 125, 130, and 132 may be formed from an organic insulating material or may be formed by stacking multiple inorganic insulating layers to achieve easy planarization. A portion of the first to third insulating layers 131, 132, and 133 may be formed from an organic insulating material, and the remaining portion of the first to third insulating layers 131, 132, and 133 may be formed from an inorganic insulating material.

[0127] The light-emitting element 300 can be provided at each of the sub-pixels RSP, GSP, and BSP, and therefore, light of a color having a gray level corresponding to the same sub-pixel is emitted according to the driving circuit DC of the same sub-pixel. Two facing electrodes of the light-emitting element 300, e.g., each anode 310 (310R, 310G, or 310B) and the cathode 330, can each include conductive materials.

[0128] The transmittance of the anodes 310 (310R, 310B, and 310G) may be greater than that of the cathode 330. For example, each of the anodes 310 (310R, 310B, and 310G) may be a transparent electrode formed by a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), or the like, and the cathode 330 may be a transparent reflective electrode formed of a metal or metal alloy containing silver (Ag), magnesium (Mg), and ytterbium (Yb), while being formed to have a small thickness. The work function of the cathode 330 may be smaller than that of the anodes 310 (310R, 310B, and 310G).

[0129] In the light-emitting display device according to the embodiment, the reflective electrodes 200R, 200G, and 200B are provided below the anodes 310 (310R, 310G, and 310B, respectively), and therefore, light generated from the intermediate layer 320 can be radiated upward and downward, and then can repeat resonance according to reflection and re-reflection between the reflective electrodes 200R, 200G, and 200B and the cathode 330. Finally, light exits through the cathode 330.

[0130] In the light-emitting display device according to the embodiment, among light of different colors generated by the intermediate layer 320, red light can be amplified by a vertical distance between the first reflective electrode 200R and the first anode 310R arranged at the red sub-pixel RSP. Among light of different colors generated by the intermediate layer 320, green light can be amplified by a vertical distance between the second reflective electrode 200G and the second anode 310G arranged at the green sub-pixel GSP. Among light of different colors generated by the intermediate layer 320, blue light can be amplified by a vertical distance between the third reflective electrode 200B and the third anode 310B arranged at the blue sub-pixel BSP.In the light-emitting display device according to the embodiment of the disclosure, each of the sub-pixels RSP, GSP, and BSP can emit light representing a color different from that of another of the sub-pixels RSP, GSP, and BSP adjacent to it using a microcavity structure. Accordingly, in the light-emitting display device according to the embodiment of the disclosure, the color reproducibility of light emitted from each of the sub-pixels RSP, GSP, and BSP can be improved.

[0131] The intermediate layer 320 may be formed by stacking one or more stacks, each including a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL), between the anodes 310 and the cathode 330. In this case, the emission layer (EML) may be an emission layer configured to emit white light.

[0132] In the case where white light is emitted from the intermediate layer 320, color filters 500R, 500B, and 500G may be provided above the light-emitting element 300 corresponding to the sub-pixels RSP, BSP, and GSP, respectively, and therefore colors of the sub-pixels RSP, BSP, and GSP may be represented.

[0133] In the light-emitting display device according to the embodiment, it may be possible to interrupt continuity between adjacent sub-pixels RSP, BSP and GSP by a trench TS provided between the adjacent sub-pixels RSP, BSP and GSP as shown in Fig. 3 and Fig. 4, even if no ultrafine deposition mask is provided in the formation of the intermediate layer 320.

[0134] As in Fig. 3, the trench TS may be arranged on opposite sides of each anode 310 (310R, 310G, or 310B) of each of the sub-pixels RSP, GSP, and BSP, or may have a shape surrounding four sides of each anode 310 (310R, 310G, or 310B) as viewed from a top view.

[0135] The intermediate layer 320 may be interrupted in one of its sections by the trench TS in an area having a relatively low step. Accordingly, the intermediate layer 320 may be partially separated on a sub-pixel basis, thus preventing the generation of a leakage current between adjacent sub-pixels.

[0136] The intermediate layer 320 can generate light with a luminance corresponding to a voltage difference between each anode 310 and the cathode 330.

[0137] The fences 140 may be arranged on the second insulation layer 130. The fences 140 may insulate the anode 310 of each of the subpixels RSP, GSP, and BSP from the anode 310 of another subpixel SP adjacent to the previous subpixel SP. The fence 140 may overlap with a portion of the anode 310 arranged at a sidewall of the trench TS. For example, edges of the anodes 310 arranged in respective subpixels RSP, GSP, and BSP may be covered by the fences 140. The fences 140 may include an insulation material. Each fence 140 may be a rectilinear insulation layer having a predetermined thickness. For example, the fences 140 may include an inorganic insulation material.

[0138] If necessary, the fences 140 may contain a black material to obtain an effect of preventing light leakage between the adjacent sub-pixels.

[0139] The fences 140 may expose portions of the anodes 310 arranged in respective sub-pixels SP. For example, the fences 140 may define emission areas REA, GEA, and BEA in respective sub-pixels SP. Areas arranged below the emission areas REA, GEA, and BEA may be defined as non-emission areas. For example, an area including the fences 140 and the trench TS may be a non-emission area. Portions of the first and second anodes 310R and 310G in the emission areas REA and GEA of respective sub-pixels RSP and GSP may directly contact an upper surface of the insulation layer IN. Since the third reflective electrode 200B is arranged on the insulation layer IN, the third anode 310B is arranged to contact an upper surface of the third reflective electrode 200B.

[0140] The intermediate layer 320 and the cathode 330 of the sub-pixels RSP, BSP, and GSP may be stacked on the portions of the anodes 310 (310R, 310B, and 310G) exposed by the fences 140. For example, the intermediate layer 320 may directly contact the anodes 310 at their lower surface, while directly contacting the cathode 330 at its upper surface. Accordingly, in the light-emitting display device of the embodiment, luminance deviations can be prevented according to generation positions of light emitted from the emission surfaces REA, BEA, and GEA of respective sub-pixels RSP, BSP, and GSP.

[0141] An encapsulation layer 400 may be disposed on the light-emitting element 300 in the sub-pixels RSP, BSP, and GSP. The encapsulation layer 400 may prevent damage to the light-emitting element 300 caused by external moisture and influences. The encapsulation layer 400 may have a multi-layer structure. For example, the encapsulation layer 400 may include a first encapsulation layer 410, a second encapsulation layer 420, and a third encapsulation layer 430 stacked sequentially in this order. Each of the first encapsulation layer 410, the second encapsulation layer 420, and the third encapsulation layer may include an insulating material. The second encapsulation layer 420 may include a material different from that of the first encapsulation layer 410 and the third encapsulation layer 430.For example, each of the first encapsulation layer 410 and the third encapsulation layer 430 is an inorganic encapsulation layer containing an inorganic insulating material, and the second encapsulation layer 420 may be an organic encapsulation layer containing an organic insulating material. Accordingly, in the light-emitting display device according to the embodiment of the disclosure, damage to the light-emitting element 300 caused by external moisture and influences can be effectively prevented. Steps formed by the light-emitting element 300 at the sub-pixels RSP, GSP, and BSP can be removed by the second encapsulation layer 420. For example, an upper surface of the encapsulation layer 400 facing the substrate 100 may be flat. The second encapsulation layer 420 may have a greater thickness than each of the first encapsulation layer 410 and the third encapsulation layer 430.

[0142] Color filters 500R, 500B, and 500G may be arranged on the encapsulation layer 400. The color filters 500R, 500B, and 500G may overlap with the emission surfaces REA, BEA, and GEA of the subpixels RSP, GSP, and BSP, respectively. The color filters 500R, 500B, and 500G may be arranged adjacent to each other and may therefore overlap with the trench TS.

[0143] For example, the color filters 500R, 500B and 500G may include a red color filter 500R overlapping with the red emission surface REA, a blue color filter 500B overlapping with the blue emission surface BEA, and a green color filter 500G overlapping with the green emission surface GEA.

[0144] Each of the color filters 500R, 500B, and 500G may have a larger size than a corresponding one of the emission areas REA, BEA, and GEA. For example, a boundary between adjacent ones of the color filters 500R, 500B, and 500G may overlap with the groove TS. Accordingly, in the light-emitting display device according to the embodiment of the disclosure, light emitted from the light-emitting element 300 at respective sub-pixels RSP, GSP, and BSP can safely pass through the color filters 500R, 500G, and 500B of respective sub-pixels RSP, GSP, and BSP. Accordingly, in the light-emitting display device according to the embodiment of the disclosure, a light leakage phenomenon can be prevented. In the light-emitting display device according to the embodiment of the disclosure, color reproducibility can be improved.

[0145] A protective layer may be disposed on the color filters 500R, 500B, and 500G. The protective layer may prevent damage to the color filters 500R, 500B, and 500G caused by external impact and moisture. The protective layer may include an insulating material. For example, the protective layer may include an inorganic insulating material and / or an organic insulating material. The protective layer may have a multi-layer structure. For example, the protective layer may have a structure in which an inorganic protective layer formed by an inorganic insulating material is formed on an organic protective layer formed by an organic insulating material. Accordingly, in the light-emitting display device according to the embodiment of the disclosure, damage to the color filters 500R, 500B, and 500G caused by external impact and moisture can be prevented.

[0146] When resonance effects are generated according to different colors of radiated light according to different vertical phases of the first to third reflective electrodes 200R, 200G, and 200B in the sub-pixels RSP, GSP, and BSP, it may be possible to omit at least one of the color filters 500R, 500G, and 500B in the sub-pixels RSP, GSP, and BSP.

[0147] Meanwhile, in the configuration of Fig. 4, a configuration including not only the substrate 100, the gate insulating layer 110, and the interlayer insulating layer 120, but also the gate electrode 223 between the gate insulating layer 110 and the interlayer insulating layer 120 is referred to as an element substrate 1010.

[0148] In addition, the reference numeral “228” which is used with reference to Fig. 5, denotes an interconnection line or an electrode pattern formed together with the first and second source / drain electrodes 225 and 227.

[0149] In the following, various shapes of trenches in light-emitting display devices according to embodiments will be described. Fig. 6A to Fig. 6C are cross-sectional views showing various examples of trenches according to embodiments.

[0150] As in Fig. As shown in FIG. 6A, when reflective electrodes 200R and 200G are arranged in an insulating layer IN while having different vertical phases in different sub-pixels RSP and GSP adjacent to each other, a trench TSA may have a side portion having a larger width at its lower part below the first reflective electrode 200R, which has a deepest vertical phase in the insulating layer IN, than at its upper part above the first reflective electrode 200R (W1 < W2). The trench TSA may have a uniform first width W1 at its upper part above the first reflective electrode 200R and a uniform second width W2 at its lower part below the first reflective electrode 200R.

[0151] Accordingly, the deposition of an anode material on a sidewall of the trench TSA located below the first reflective electrode 200R having the deepest vertical phase in the insulation layer IN is ineffectively achieved, and therefore, an anode material 310e located at a bottom surface of the trench TSA is separated from the anodes 310R and 310G. The trench TSA is arranged adjacent to sub-pixels configured to emit different colors on their opposite sides, and therefore, the anodes 310R and 310G may be separated from each other on opposite sides of the trench TSA.

[0152] In addition, on opposite sides of the trench TSA, the first anode 310R has a side contact CTLA contacting the first reflective electrode 200R of the red sub-pixel RSP, and the second anode 310G has a side contact CTLB contacting the second reflective electrode 200G of the green sub-pixel GSP, and therefore independent electrical connections can be achieved between respective reflective electrodes and respective anodes overlapping with each other in respective sub-pixels RSP and GSP.

[0153] As in Fig. As shown in FIG. 6B, when reflective electrodes 200R and 200G are arranged in an insulating layer IN while having different vertical phases in different sub-pixels RSP and GSP that are adjacent to each other, a trench TSB may have a side portion that has a larger width at its lower part below the first reflective electrode 200R, which has a deepest vertical phase in the insulating layer IN, than at its upper part above the first reflective electrode 200R (W1 < WV). The trench TSB may have a uniform first width W1 at its upper part above the first reflective electrode 200R and a varying width WV that gradually increases at its lower part below the first reflective electrode 200R.

[0154] Accordingly, the deposition of an anode material on a sidewall of the trench TSB located below the first reflective electrode 200R having the deepest vertical phase in the insulation layer IN is ineffectively achieved, and therefore, an anode material 310e located at a bottom surface of the trench TSB is separated from anodes 310R and 310G. The trench TSB is arranged adjacent to sub-pixels configured to emit different colors on their opposite sides, and therefore, the anodes 310R and 310G may be separated from each other on opposite sides of the trench TSB.

[0155] In addition, on opposite sides of the trench TSB, the first anode 310R has a side contact CTLA contacting the first reflective electrode 200R of the red sub-pixel RSP, and the second anode 310G has a side contact CTLB contacting the second reflective electrode 200G of the green sub-pixel GSP, and therefore independent electrical connections can be achieved between respective reflective electrodes and respective anodes overlapping with each other in respective sub-pixels RSP and GSP.

[0156] As in Fig. 6C, when reflective electrodes 200R and 200G are arranged in an insulating layer IN while having different vertical phases in different sub-pixels RSP and GSP respectively adjacent to each other, a trench TSC may have different widths at its upper and lower parts with respect to a boundary of the first reflective electrode 200R having a deepest vertical phase in the insulating layer IN, such that the trench TSC has an increased width W3 at a lower surface of the first reflective electrode 200R, and therefore, separation of an anode material 310e at a sidewall and a lower surface of the trench TSC can be achieved.In this case, the trench TSC may have a uniform first width W1 at its upper part above the first reflective electrode 200R and a second width W3, which is increased from the first width W1, at the bottom surface of the first reflective electrode 200R, such that the trench TSC has a width that gradually decreases as it extends downward toward a substrate 100. In this case, the trench TSC has a large width difference at the bottom surface of the first reflective electrode 200R, and therefore anodes 310R and 310G, which are arranged at sidewalls of the trench TSC above the first reflective electrode 200R, may be separated from the trench TSC at a position below the bottom surface of the first reflective electrode 200R.Although the anode material 310e may be deposited at the bottom surface of the trench TSC in this case, the anode material 310e may have an island shape and may therefore be physically spaced from the anodes 310R and 310G at the sidewalls of the trench TSC disposed above the first reflective electrode 200R.

[0157] Accordingly, the deposition of an anode material on the sidewalls of the trench TSC located below the first reflective electrode 200R, which has the deepest vertical phase in the insulation layer IN, is ineffectively achieved, and therefore the anode material 310e located at the bottom surface of the trench TSC is separated from the anodes 310R and 310G. The trench TSC is arranged adjacent to subpixels configured to emit different colors on their opposite sides, and therefore the anodes 310R and 310G may be separated from each other on opposite sides of the trench TSC.

[0158] In addition, on opposite sides of the trench TSC, the first anode 310R has a side contact CTLA contacting the first reflective electrode 200R of the red sub-pixel RSP, and the second anode 310G has a side contact CTLB contacting the second reflective electrode 200G of the green sub-pixel GSP, and therefore, an independent electrical connection can be achieved between respective reflective electrodes and respective anodes overlapping with each other in respective sub-pixels RSP and GSP.

[0159] A structure of the intermediate layer 320 is described below.

[0160] Fig. 7A and Fig. 7B are sectional views each showing different shapes of the light-emitting element according to the embodiment of the disclosure.

[0161] As another form, the intermediate layer 320 may have a configuration including multiple stacks B1, PS and B2 between an anode AND and a cathode CAT, as shown in Fig. 7A is shown.

[0162] Each of the stacks B1, PS, and B2 may include at least one hole-transport layer HTL, at least one emission layer EML, and at least one electron-transport layer ETL. The stacks B1, PS, and B2 may be separated from each other by charge-generation layers CGL1 and CGL2, respectively. Each of the charge-generation layers CGL1 and CGL2 may include an n-type charge-generation layer configured to generate electrons and transfer the generated electrons to a lower stack adjacent thereto, and a p-type charge-generation layer configured to generate holes and transfer the generated holes to an upper stack adjacent thereto.

[0163] The first reflective electrode 200R, which has a deepest vertical phase, is arranged on the first insulation layer 125 such that it extends to a sidewall of the trench TS. The first reflective electrode 200R is connected to the second transistor TR2, which is arranged below the first reflective electrode 200R.

[0164] The light-emitting elements 300 include the reflective electrodes 200R, 200G, and 200B, which are respectively disposed thereunder and can therefore block light emitted directly downward. In each embodiment of the disclosure, each of the reflective electrodes 200R, 200G, and 200B is formed to extend toward the sidewalls of the groove TS corresponding to it and can therefore block light incident upon it at an angle after being emitted from the light-emitting element in a sub-pixel adjacent to it. In this case, leakage light from the adjacent sub-pixel is prevented from being propagated to a driving circuit disposed below the sub-pixel in question. Since leakage light is prevented from being propagated to the adjacent sub-pixel during low-grayscale driving, there is an advantage in that a clear display can be achieved.

[0165] The intermediate layer 320 may be formed without being separated on a sub-pixel basis to omit an ultrafine mask and simplify processes. In this case, the trench TS is provided under the sub-pixels RSP, GSP, and BSP to prevent the generation of a lateral leakage current between adjacent sub-pixels RSP, GSP, and BSP via the intermediate layer 320. Separation of the intermediate layer 320 between adjacent sub-pixels RSP, GSP, and BSP may be achieved by the trench TS. For example, the intermediate layer 320 disposed at the sub-pixels RSP, GSP, and BSP may be partially separated between adjacent sub-pixels RSP, GSP, and BSP by the trench TS.

[0166] In case of Fig. 7A, each of the first stack B1 adjacent to the anode AND and the third stack B2 adjacent to the cathode CAT may include a blue emission layer, and the blue emission layer may include a fluorescent material and / or a phosphorescent material.

[0167] The second stack PS between the first and third stacks B1 and B2 may be configured by including an emission layer with a wavelength longer than blue. The second stack PS may include multiple phosphorescent emission layers. If necessary, one of the first stack B1 and the third stack B2 may be omitted, and therefore the intermediate layer 320 may be configured by including a blue stack BS configured to emit blue, a phosphorescent emission stack PS including a phosphorescent emission layer, and a charge generation layer CGL between the blue stack BS and the phosphorescent emission stack PS.

[0168] In this case, light emerging from the light-emitting display device 1000 uses a light color emitted from the intermediate layer 320 as a basis. Accordingly, the second stack PS may further include a red emission layer and a green emission layer adjacent to each other to enable the expression of pure colors of light from individual light-emitting elements.

[0169] The cathode 330 may be formed in a deposition process and may be provided in the active area AA while having a smaller thickness than the intermediate layer 320.

[0170] Fig. Figure 7B shows another form of the intermediate layer 320 of the light-emitting element 300, which includes multiple stacks. The intermediate layer 320 of Fig. 7B is from the Fig. 7A with respect to the arrangement of emission layers, while containing an increased number of stacks. In the light-emitting element according to Fig. 7B, the intermediate layer 320 disposed between the anode AND and the cathode CAT is configured by including a first common layer CML1, a red emission layer REML, a second common layer CML2, a first charge generation layer CGL1, a third common layer CML3, a first blue emission layer BEML1, a fourth common layer CML4, a second charge generation layer CGL2, a fifth common layer CML5, a green emission layer GEML, a sixth common layer CML6, a third charge generation layer CGL3, a seventh common layer CML7, a second blue emission layer BEML2, and an eighth common layer CML8.

[0171] Each of the stacks separated by charge generation layers CGL1, CGL2, and CGL3 contains a single emission layer. The single emission layer can be arranged at an optimal distance corresponding to a color to be emitted, thus enabling more reliable emission expression of pure colors to be displayed by respective subpixels RSP, GSP, and BSP.

[0172] In the intermediate layer 320, each of the first common layer CML1, the third common layer CML3, the fifth common layer CML5, and the seventh common layer CML7 may include a hole transport layer, and each of the second common layer CML2, the fourth common layer CML4, the sixth common layer CML6, and the eighth common layer CML8 may include an electron transport layer.

[0173] The first common layer CML1 adjacent to the anode AND may further include a hole injection layer, and the eighth common layer CML8 adjacent to the cathode CAT may further include an electron injection layer.

[0174] The plurality of sub-pixels RSP, BSP, and GSP provided at the substrate 100 may include a red sub-pixel RSP, a blue sub-pixel BSP, and a green sub-pixel GSP.

[0175] Meanwhile, in the light-emitting display device according to each embodiment of the disclosure, the intermediate layer 320 can be formed in the entirety of the active area AA in one deposition process. In this case, it is unnecessary to provide a deposition mask that requires openings for respective high-resolution sub-pixels in a process of forming the intermediate layer 320 and the cathode 330. Accordingly, there is an advantage in that the production yield is increased due to the omission of a fine deposition mask. Second embodiment

[0176] Fig. Figure 8 is a cross-sectional view taken along line II' in Fig. 3, according to a second embodiment of the disclosure. Fig. Figure 9 is a cross-sectional view taken along the line II-II' in Fig. 3, according to the second embodiment of the disclosure.

[0177] As in Fig. 8 and Fig. 9, in a light-emitting element according to the second embodiment of the disclosure, lower surfaces of trenches TS arranged under sub-pixels RSP, GSP, and BSP may be arranged at upper surfaces of reflective electrodes 1200R, 1200G, and 1200B respectively adjacent to the trenches TS.

[0178] In this case, at the bottom surfaces of the trenches TS in respective subpixels RSP, GSP, and BSP, anodes 310R, 310G, and 310B may be connected to the top surfaces of the reflective electrodes 1200R, 1200G, and 1200B arranged thereunder, respectively, through contacts CTBA, CTBB, and CTBC. A respective anode may contact an upper surface of a respective reflective electrode in a portion of a bottom surface of the trench TS.

[0179] In this case, the reflective electrodes 1200R, 1200G, and 1200B not only extend along the emission surfaces REA, GEA, BEA, respectively, but also extend to the grooves TS adjacent to them, respectively. Accordingly, each of the reflective electrodes 1200R, 1200G, and 1200B can not only directly reflect light emitted by a light-emitting element 300 of a corresponding one of the sub-pixels RSP, GSP, and BSP, but can also prevent light laterally leaking from the adjacent sub-pixel from being transmitted to the transistors TR1 and TR2 arranged thereunder. As a result, it may be possible to solve a problem of photoelectric current generation of the transistors TR1 and TR2 caused by internal light of the light-emitting display device.

[0180] In this case, anodes 310 (310R, 310G and 310B) may extend from the emission surfaces REA, GEA and BEA of the subpixels RSP, GSP and BSP to sidewalls of the trenches TS and portions of the bottom surfaces of the trenches TS, respectively.

[0181] Since the anodes 310 (310R, 310G, and 310B) are to be spaced apart between adjacent subpixels RSP, GSP, and BSP, the anodes 310 (310R, 310G, and 310B) may be patterned using a mask. In this case, one edge of each of the anodes 310 (310R, 310G, and 310B) may be disposed at the bottom surface of the corresponding trench TS, and the other edge of each of the anodes 310 (310R, 310G, and 310B) may be disposed on the insulation layer IN without overlapping with the corresponding trench TS.

[0182] In addition, a first fence 140a may be provided to surround one edge of each anode 310 disposed at the bottom surface of the corresponding trench TS to effectively achieve separation from adjacent ones of the anodes 310R, 310G, and 310B.

[0183] The further edge of each of the anodes 310 (310R, 310G and 310B) arranged on the insulation layer IN may be protected by a second fence 140b.

[0184] In Fig. 8 and Fig. 9, first and second air gaps GP1 and GP2 are shown in respective trenches TS. In the light-emitting display device according to the second embodiment of the disclosure, the trenches TS have different depths according to the vertical phases of the reflective electrodes 1200R, 1200G, and 1200B adjacent to them, and therefore, the second air gap GP2 formed in the trench TS, which has a relatively small depth, can be small.

[0185] The trenches TS are provided to separate at least a portion of the multiple layers constituting an intermediate layer 320. At least a portion of the multiple layers constituting the intermediate layer 320 is separated between adjacent sub-pixels RSP, GSP, and BSP on opposite sides of the first air gap GP1 or the second air gap GP2. Therefore, a horizontally continuous structure of the intermediate layer 320 among the sub-pixels is interrupted. Therefore, independent driving on a sub-pixel basis is possible, and the generation of a lateral leakage current can be prevented.

[0186] In addition, the reflective electrodes 1200R, 1200G and 1200B are each connected to second transistors TR2 and therefore a triple current path can be constructed between respective drive circuits DC and respective reflective electrodes 1200R, 1200G and 1200B. Third embodiment

[0187] Fig. 10 is a cross-sectional view taken along line II' in Fig. 3, according to a third embodiment of the disclosure. Fig. 11 is a cross-sectional view taken along the line II-II' in Fig. 3, according to the third embodiment of the disclosure.

[0188] As in Fig. 10 and Fig. As shown in Fig. 11, the light-emitting display device according to the third embodiment of the disclosure is different from that of the second embodiment in that the fences 140a and 140b are omitted.

[0189] In this case, portions of anodes 310R, 310G and 310B arranged at sidewalls of trenches TS may contact an intermediate layer 320.

[0190] If lower surfaces of the trenches TS are Fig. 10 and Fig.11, a first reflective electrode 1200R and the first anode 310R, which overlap with each other in a red emission area REA, extend to a corresponding one of the trenches TS and are therefore connected to each other, a second reflective electrode 1200G and the second anode 310G, which overlap with each other in a green emission area GEA, extend to a corresponding one of the trenches TS and are therefore connected to each other, and a third reflective electrode 1200B and the third anode 310B, which overlap with each other in a blue emission area BEA, extend to a corresponding one of the trenches TS and are therefore connected to each other.

[0191] For example, in the light-emitting display device according to the third embodiment of the disclosure, each reflective electrode and each anode corresponding to each other are connected to each other in an area other than an emission area, and therefore, an upper surface of an insulating layer IN adjacent to the trench TS can be used as an emission area in its entirety. In this case, there is an advantage in that the emission area is expanded.

[0192] The reflective electrodes 1200R, 1200G, and 1200B of respective sub-pixels are connected to the anodes 310R, 310G, and 310B at lower surfaces of corresponding ones of the trenches TS while having surface contacts CTBA, CTBB, and CTBC, and therefore, a triple current path can be established between respective drive circuits DC and respective reflective electrodes 1200R, 1200G, and 1200B.

[0193] In the light-emitting display device according to each embodiment of the disclosure, portions of the intermediate layer between adjacent sub-pixels are separated from each other by a trench structure between the adjacent sub-pixels, and therefore, it may be possible to prevent generation of a lateral leakage current caused by a horizontal continuous structure of a layer having high electrical conductivity in the intermediate layer.

[0194] In the light-emitting display device according to each embodiment of the disclosure, each reflective electrode is connected to a corresponding anode at a sidewall of a trench, and therefore, a connection between the reflective electrode and the anode or a connection between the anode and a corresponding transistor can be omitted. Accordingly, an ineffective area allocated to the anode for connecting the anode to a drive circuit including the transistor can be reduced, and therefore, an improvement in the aperture ratio can be achieved. Thus, higher resolution can be achieved.

[0195] The light-emitting display device according to each embodiment of the disclosure can prevent influence between adjacent sub-pixels caused by light emitted from the sub-pixels, and therefore stable expression of low gray levels can be achieved.

[0196] In the light-emitting display device according to each embodiment of the disclosure, a process of connecting an anode and a transistor can be omitted, and therefore, there is an advantage of process optimization. There is an advantage in that greenhouse gas emissions can be reduced according to reduced processes.

[0197] In the light-emitting display device according to each embodiment of the disclosure, an effective emission area of ​​an anode is increased, and therefore the light-emitting display device can exhibit effects of reduced power consumption, high efficiency, and high luminance, thereby exhibiting sustainability. Thus, environmental / social / governmental (ESG) goals can be achieved.

[0198] Although the various embodiments of the disclosure have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions, and substitutions are possible without departing from the scope of the disclosure as disclosed in the accompanying claims. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] KR 10-2024-0028397

[0001]

Claims

[1] Light-emitting display device comprising: a substrate (100) comprising a drive circuit (DC) for driving at least one of a plurality of sub-pixels (SP); an insulation layer (IN) on the control circuit (DC); a reflective electrode (200) arranged in or on the insulating layer (IN) and connected to the drive circuit (DC); a trench (TS) provided in the insulation layer (IN); and a light-emitting element (300) comprising an anode (310) overlapping with the reflective electrode (200), the anode (310) contacting the reflective electrode (200) in the trench (TS). [2] The light-emitting display device according to claim 1, wherein the anode (310) contacts the reflective electrode (200) at a sidewall of the trench (TS) and / or the reflective electrode (200) contacts a sidewall of the trench (TS). [3] The light-emitting display device according to claim 1 or 2, wherein a bottom surface of the trench (TS) is arranged at a lower level than the reflective electrode (200). [4] A light-emitting display device according to any one of the preceding claims, wherein the reflective electrode (200) has a contact (CTA) contacting the drive circuit (DC) in an emission area (EA) of the sub-pixel (SP) corresponding thereto. [5] Light-emitting display device according to one of the preceding claims, wherein the trench (TS) has a smaller width (W) than depth and / or the trench (TS) has a larger width (W) at a lower part of the trench (TS) than at an upper part of the trench (TS). [6] A light-emitting display device according to any one of the preceding claims, wherein the reflective electrode (200) is arranged in the insulating layer (IN) while having a vertical phase or being at a different vertical level that is different from a vertical phase or a vertical level of another reflective electrode (200) in an adjacent sub-pixel (SP), and preferably the trench (TS) has a bottom surface that is arranged below one of the reflective electrodes (200) having a deepest vertical phase in the insulating layer (IN). [7] A light-emitting display device according to any one of the preceding claims, wherein the anode (310) at the sidewall of the trench (TS) is separated from an anode material at a lower surface of the trench (TS) or is separated from an anode material of the opposite sidewall of the trench (TS). [8] A light-emitting display device according to any one of the preceding claims, wherein the anode (310) contacts an upper surface of the reflective electrode (1200) in a portion of a lower surface of the trench (TS) and / or the reflective electrode (1200) covers at least a part of the lower surface or the bottom of the trench (TS), and preferably the anode (310) extends from an emission surface (EA) of the sub-pixel (SP) corresponding to it to the sidewall of the trench (TS) and the lower surface of the trench (TS). [9] A light-emitting display device according to any one of the preceding claims, wherein the light-emitting element (300) comprises an intermediate layer (320) and a cathode (330) on the anode (310); the intermediate layer (320) comprises a stack of layers separated from each other by a charge generation layer (CGL1, CGL2); and the stack comprises a hole transport layer (HTL), an emission layer (EL) and an electron transport layer (ETL) and preferably a section of the anode (310) arranged at a side wall of the trench (TS) contacts the intermediate layer (320). [10] A light-emitting display device according to any preceding claim, further comprising a fence (140) overlapping a portion of the anode (300) disposed at a sidewall of the trench (TS). [11] A light-emitting display device according to any one of the preceding claims, further comprising an encapsulation layer (400) and / or a color filter (500) arranged on the light-emitting element (300). [12] A light-emitting display device according to any one of the preceding claims, wherein the drive circuit (DC) comprises at least one transistor (TR) and the at least one transistor (TR) comprises: a first source / drain region (102d) and a second source / drain region (102s) provided in the substrate (100) comprising silicon; a gate electrode (223) disposed on the substrate (100) between the first source / drain region (102d) and the second source / drain region (102s); and a first source / drain electrode (227) and a second source / drain electrode (225) arranged on opposite sides of the gate electrode (223) while being connected to the first and second source / drain regions (102d, 102s).

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