Power module and method for producing a power module

Abstract

Power module (12) with a circuit carrier comprising a carrier substrate and an electrical insulation layer, wherein the circuit carrier has a first conductor structure with an external contact region and at least one second conductor structure with at least one external contact region and a further, third conductor structure which comprises at least one external contact region, with semiconductor components (42) arranged individually or in groups, characterized in that a multifunctional frame (50) with a printed circuit board is assigned to the power module (12), wherein the groups of semiconductor components (42) are arranged in a first plane (60) which is spatially separated from a second plane (62) in the multifunctional frame (50), and the semiconductor components (42) are connected by a first welded connection (112) with the introduction of at least one first spacer (100).1) are electrically connected to one another, wherein the power module (12) is electrically connected to the multifunctional frame (50) by a sleeve connection (117) by introducing at least one double-end pin (76, 78, 80) and at least one sleeve (118).

Description

Technical area

[0001] The invention relates to a power module comprising a first circuit carrier made of a carrier substrate and a first conductor structure with an external contact region, at least one second conductor structure with at least one external contact region, and a further, third conductor structure comprising an external contact region, further comprising a first group of semiconductor components and a second group of semiconductor components. Furthermore, the invention relates to a method for producing a power module. State of the art

[0002] From DE 11 2017 004 390 T5 a power module is known which has the following features: an insulating substrate having a front side to which a power semiconductor element is attached; a base plate connected to a back side of the insulating substrate; a housing attached to the base plate and surrounding the insulating substrate; a cover attached to the housing and forming a sealed area; and a silicone gel serving as a filling element which fills the entire sealed area and has an internal stress acting as a compressive stress.

[0003] DE 10 2014 219 998 B4 discloses a power module, in particular for providing a phase current for an electric motor. The power module comprises a circuit carrier with a surface, at least two first contact surfaces on the surface, and at least two first power transistors, each of which has a ground contact surface. A first power transistor of the at least two first power transistors is arranged directly on each of the first contact surfaces and is electrically conductively connected to the respective first contact surface via its ground contact surface. Furthermore, the power module comprises a second contact surface on the surface and at least two second power transistors, each of which has a ground contact surface.The at least two second power transistors are arranged directly on the second contact surface and are electrically connected directly to the second contact surface via their respective ground contact surfaces. Furthermore, the power module comprises at least two third contact surfaces on the surface, wherein the at least two second power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a second power transistor of the at least two second power transistors is electrically connected to one of the at least two third contact surfaces via its further contact surface.The at least two first contact surfaces and the at least two third contact surfaces are arranged alternately one after the other in a longitudinal direction of the power module, and the second contact surface is arranged next to the at least two first contact surfaces and the at least two third contact surfaces, the second contact surface having at least two contact regions, one of the at least two contact regions being located next to each of the at least two first power transistors. The at least two first power transistors each have a further contact surface on their sides facing away from the surface of the circuit carrier, and a first power transistor of the at least two first power transistors is electrically conductively connected via its further contact surface to the respective contact region of the at least two contact regions of the second contact surface located next to it.Here, the at least two contact regions of the second contact surface and the at least two second power transistors are arranged alternately one after the other in the longitudinal direction.

[0004] EP 2 418 925 B1 discloses an electrical contact between a flexible foil having at least one conductor track and at least one electrical contact of a sensor or control device. An end section of the flexible foil is electrically contacted at a contact point by heat input, with the end section of the flexible foil being positioned against protruding electrical contacts at the contact point. The end section of the flexible foil is designed as a wave pattern, in particular as a deflection element. Disclosure of the invention

[0005] According to the invention, a power module is proposed with a circuit carrier comprising a carrier substrate and an electrical insulation layer, wherein the circuit carrier has a first conductor structure with an external contact region and at least one second conductor structure with at least one external contact region and a further, third conductor structure comprising at least one external contact region, with semiconductor components arranged individually or in groups, wherein the power module is assigned a multifunctional frame with a printed circuit board, the groups of semiconductor components are arranged in a first plane which is spatially separated from a second plane in the multifunctional frame, are electrically connected to one another by a first welded connection with the introduction of at least one spacer,wherein the power module is electrically connected to the multifunctional frame by a sleeve connection with the introduction of at least one double-ended pin and at least one sleeve.

[0006] A double-ended pin in the sense of the invention is a pin or, for example, a bolt that serves as a connecting element to enable current flow between two electronic components. The double-ended pin according to the invention has a central shaft to which a mandrel is attached at both ends. The mandrels are arranged such that they have a plug-in shape that enables simple and secure fastening in prepared openings in a printed circuit board (PCB) and a sleeve. The double-ended pin is inserted, for example, into a suitable opening in the part of the power module and / or the circuit board of the multifunction frame to be connected and is then pressed, hammered, or otherwise compressed to create a mechanical and electrical connection between the power module and the multifunction frame.By pressing in the double-ended pin, the lowest possible electrical resistance is achieved, enabling low-loss power transmission between the connected components. In this context, press-in pins are typically made of conductive materials such as copper, aluminum, brass, or alloys. Another function of press-in pins is to create a reliable and stable electrical connection. Furthermore, the use of press-in pins as an electrical connection enables a modular design between the power module and the multifunction frame, making assembly, maintenance, and repair easier than with a material-to-material electrical connection. The advantage of press-in pins is that they are connected using a comparatively low-invasive joining technique.In contrast to soldering processes, which often require higher temperatures and cause chemical reactions in the materials, double-ended pins enable a very reliable connection over the lifetime of the module.

[0007] In the inventive solution, a suitable opening is understood to be an opening in a sleeve. A sleeve is, for example, a cylindrical or tubular component with a through-hole. This hole is sized to accommodate a double-ended pin. The sleeve has a bottom surface, which can be welded or soldered to the power module, for example.

[0008] In an advantageous embodiment of the power module proposed according to the invention, the semiconductor components are arranged individually or in groups on a base of the power module.

[0009] In a further advantageous embodiment of the power module proposed according to the invention, the power module is connected to a cooling surface either via an adhesive connection, a first solder connection or a fourth weld connection.

[0010] In a further advantageous embodiment of the power module proposed according to the invention, the power module is connected to the multifunctional frame via a second welded connection and a third welded connection.

[0011] In a further advantageous embodiment variant of the power module proposed according to the invention, a first welded joint comprises a first weld layer, a second weld layer and a third weld layer.

[0012] In a further advantageous embodiment of the power module according to the invention, the multifunctional frame is arranged above or below the power module as seen in the Z direction.

[0013] In a further advantageous embodiment of the power module according to the invention, current-carrying components, in particular a T+ bridge and a T- bridge, are formed one above the other or next to each other in the multifunctional frame in such a way that a low-inductive connection is formed.

[0014] In a further advantageous embodiment of the power module according to the invention, the one or more sleeves are connected to the power module via the second welded connection or a second soldered connection.

[0015] In a further advantageous embodiment of the power module according to the invention, one or more double-ended pins have a first side and a second side.

[0016] Furthermore, the invention relates to a method for producing a power module in which - a first conductor structure with a first contact area, - at least one second conductor structure with at least one external contact area and - a further, third conductor structure having an external contact area is provided, wherein - a multifunctional frame is assigned to the power module, - wherein an electrical connection of the power module to the multifunctional frame is made via at least one double-ended pin, - groups of semiconductor components are arranged in a first level, which are spatially separated from a second level in the multifunctional frame, - wherein contact surfaces contacting the groups of semiconductor components are arranged in the second level. Advantages of the invention

[0017] In the embodiments of the power module proposed according to the invention, the active areas and the layout areas are advantageously designed to be separate from one another. The inventive arrangement of the multifunctional frame, which is arranged above the power module, for example, shifts the current flow from the power module to the multifunctional frame arranged above it, for example. This leads to improved cooling of the semiconductor components. Since larger distances between the semiconductor components can also be realized, improved cooling can be achieved. Due to the embodiment proposed according to the invention, it is also advantageous if current-carrying paths, such as a T+ bridge and / or a T- bridge, are laid into the multifunctional frame and designed there above or next to one another as a low-inductance connection.In particular, switching losses can be reduced by designing the current-carrying paths as low-inductance current paths.

[0018] The material connection proposed by the invention between the multifunctional frame and the semiconductor components accommodated at the base of the power module, for example MOSFETs, IGBTs, diodes, or another electronic component, enables an effective and robust electrical connection to be established between the multifunctional frame, the contact surfaces running thereon, and the semiconductor components themselves. Advantageously, the invention proposes a combination of a sleeve connection for the signal line and a welded connection for high-current lines between the power module and the multifunctional frame. Simple assembly and disassembly of the power module from the multifunctional frame is achieved by the sleeve connection proposed by the invention using sleeves.

[0019] The double-end pin according to the invention, with which the cable module is electrically connected to the multifunctional frame, achieves a cost-effective and reliable joining connection. Short description of the drawings

[0020] Embodiments of the invention are explained in more detail with reference to the drawings and the following description.

[0021] They show: Fig. 1 a plan view of a circuit carrier of a power module with a carrier substrate and an arrangement option for semiconductor components, Fig. 2 a plan view of a power module with separate cooling and layout areas with laterally arranged areas for press-in pins and Fig. 3 an arrangement of a power module and a multifunctional frame arranged above it in an exploded view, Fig. 4 a sectional view of the arrangement of a power module and a multifunctional frame arranged above it in the Z direction and Fig. 5 a sectional drawing of the arrangement of a power module and a printed circuit board arranged above it in the Z direction. Embodiments of the invention

[0022] In the following description of the embodiments of the invention, identical or similar elements are designated by the same reference numerals, whereby a repeated description of these elements is omitted in individual cases. The figures only schematically illustrate the subject matter of the invention.

[0023] Fig. 1 shows a plan view of a power module 12, in particular of its circuit carrier 14.

[0024] The top view according to Fig. 1 shows that a carrier substrate 40 of the circuit carrier 14 is provided with a number of conductor structures 18, 20A, 20B, 22. The circuit carrier 14 extends in an X, Y plane 10, wherein the circuit carrier 14 is provided with an electrical insulation layer 16. Located on this layer, separated from one another by channel-shaped interruptions, is a first conductor structure 18, which has an external contact region 18.2. Furthermore, symmetrically to a central longitudinal axis 24 of the power module 12, second conductor structures 20A, 20B are located opposite one another on the first circuit carrier 14. Each of the two second conductor structures 20A, 20B comprises an external contact region 20A.2, 20B.2. Finally, a third conductor structure 22 is applied to the circuit carrier 14 or to its electrical insulation layer 16, which has at least one external contact area 22.2.

[0025] The conductor structures 18, 20A, 20B, 22 are electrically separated from one another and are applied to the circuit carrier 14 essentially symmetrically to the central longitudinal axis 24. Position 36 denotes an active area, and a layout area surrounding this area for the current conduction is designated by reference numeral 38. The carrier substrate 40 of the circuit carrier 14 is advantageously AMB (Active Metal Brazing, OFC (Oxygen-free Copper) / Si3N 4 / OFC)) was elected.

[0026] According to the illustration Fig. 2 shows a plan view of the power module 12, wherein in this schematic representation semiconductor components 42 are arranged on active surfaces 36, which may be, for example, transistors, MOSFETs, IGBTs, diodes or other semiconductor components that can be used as semiconductor switches. Fig. 2 that a first group 64 of semiconductor components 42 is accommodated on the active areas 36. The individual semiconductor components 42 can be designed, for example, as MOSFETs and have control terminals 34 on their outer sides, via which a control (not shown in detail) of the individual semiconductor components 42 of the first group 64 of semiconductor components 42 can take place. Analogous to the first group 64, a second group 66 of semiconductor components 42 is provided, which can also be MOSFETs, with control terminals 34 formed on their outer region. An arrangement of the semiconductor components 42 in groups 64, 66 is not absolutely necessary - depending on the scaling, these can also be arranged individually, i.e., not in groups.The semiconductor components 42 of the second group 66 of semiconductor components 42 can be controlled from the outside via the control connections 34, although this is not shown in the illustration according to . Fig. 2 is not shown in detail.

[0027] The exploded view according to Fig. 3 shows that a multifunctional frame 50 shown here is mounted on the power module 12. On the top side of the Fig. 3, the individual double-end pins 76, 78, 80, 82, 84, 86, 88, 90, - here lying in the same plane of the drawing - protrude vertically upwards. The sleeves 118 arranged within the multifunction frame 50 or the power module 12 arranged underneath can be electrically contacted in a robust and simple manner via the double-end pins 76-90. Fig. 3 further shows that the multifunctional frame 50 represents a first level 60, while the power module 12 arranged below it in this case forms a second level 62. Likewise, in a modification of the illustration according to Fig. 3 the multifunctional frame 50 can be arranged above the power module 12 as seen in the Z direction 54.

[0028] Fig. 4 shows a sectional view of the arrangement of a power module 12 and a multifunctional frame 50 arranged above it in the Z direction 54. From the illustration according to Fig. 4 further shows that the multifunctional frame 50 represents a first level 60, while the power module 12 arranged below it in this case forms a second level 62. In the Fig. 4, a first weld 112, a second weld 113, a third weld 122, and a fourth weld 123 are further shown. Furthermore, the first weld 112 has a first weld layer 114, with which the semiconductor component 42 is connected to a base 96 of the power module 12. Furthermore, the first weld 112 has a second weld layer 115, with which the semiconductor component 42 is connected to a first spacer 100.1, and a third weld layer 116, which connects the first spacer 100.1 to a contact strip 142 of the multifunctional frame 50, so that the heat of the contact strips 142 can be dissipated through the base 96 to the cooling surface 106 via a fourth weld 123 or a first solder connection 110 or an adhesive connection 108. Fig. The first welded joint 112 shown in Figure 4 advantageously ensures efficient heat dissipation and electrical reliability.

[0029] The Fig. The connection of the base 96 of the power module 12 to the cooling surface 106 shown in Figure 4 can be variably made by the first solder connection 110, the adhesive connection 114 or a fourth weld connection 123. All connections of the base 96 of the power module 12 to the cooling surface 106 are characterized by an efficient thermal conductivity of the heat of the contact strip 142 dissipated through the base 96 of the power module 12. These connection options also offer optimal adaptation to tolerances of the surface of the power module 12 to be contacted with the cooling surface 106, since a uniform surface contact is ensured by the Fig. 4 shown connection options are available.

[0030] The Fig. The third welded joint 122, partially shown in Figure 4, comprises a fourth and fifth sintered layer 124, 125 (not shown here), via which a second spacer 100.2 is connected to the underside of the phase bridge 136 and via which the second spacer 100.2 is connected to the base 96 of the power module 12. The second spacer, not shown here, is located on the base 96 of the power module 12, so that the heat of the phase bridge 136 can be dissipated through the base 96 via the fourth welded joint 123 or the first soldered joint 110 or the adhesive joint 108 to the cooling surface 106.

[0031] One in Fig. The sleeve connection 117 shown in Figure 4 has a second welded connection 113 with a sixth weld layer 119, wherein the Fig. 4 are connected to the base 96 of the power module 12. Within the sleeves 118 there is a double-ended pin 76, 78, wherein a first side 126 of the double-ended pin 76, 78 is inserted into the sleeve 118. In addition, the Fig. 4, the double-ended pins 76, 78, 80 have a second side 128, which is designed to be plugged together with a printed circuit board 130 located in the multifunctional frame 50. The second welded connection 113 can alternatively be replaced by a second soldered connection 113 with a solder layer.

[0032] Fig.Figure 4 shows a sectional view of the arrangement of a power module 12 and a printed circuit board 130 arranged above it in the Z direction 54. Two sleeve connections 117 are also shown. Each sleeve connection 117 has a sleeve 118, which can be fastened, for example, via a second welded connection 113 or second soldered connection 113 to the base 96 of the power module 12. A double-ended pin 80, 82 is located within each sleeve 118, with a first side 126 of the double-ended pin 80, 82 being inserted into the sleeve 118 and the second side 128 of the double-ended pin 80, 82 being pressed into an opening 132 of the printed circuit board 130. The first side 126 and the second side 128 of the double-ended pins 76, 78, 80, 82, 84, 86, 88, 90 may, for example, have a specific shape of the mandrel, such as a conical shape, a cylindrical shape or a disc-shaped shape.Alternatively, the first side 126 and the second side 128 of the double-ended pins 76, 78, 80, 82, 84, 86, 88, 90 may have a different shape, thereby creating a stable and permanent connection between the components.

[0033] The invention is not limited to the embodiments described here and the aspects highlighted therein. Rather, numerous modifications are possible within the scope of the claims, which are within the scope of one skilled in the art. QUOTES CONTAINED IN THE DESCRIPTION

[0000] This list of documents submitted by the applicant was generated automatically and is included solely for the convenience of the reader. This list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions. Cited patent literature

[0000] DE 11 2017 004 390 T5

[0002] DE 10 2014 219 998 B4

[0003] EP 2 418 925 B1

[0004]

Claims

[1] Power module (12) with a circuit carrier (14) comprising a carrier substrate (40) and an electrical insulation layer (16), wherein the circuit carrier (14) has a first conductor structure (18) with an external contact area (18.2) and at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and a further, third conductor structure (22) comprising at least one external contact area (22.2), with semiconductor components (42) arranged individually or in groups (64, 66), characterized byin that a multifunctional frame (50) with a printed circuit board (130) is assigned to the power module (12), wherein the groups (64, 66) of semiconductor components (42) are arranged in a first plane (60) which is spatially separated from a second plane (62) in the multifunctional frame (50), and the semiconductor components (42) are electrically connected to one another by a first welded connection (112) with the introduction of at least one first spacer (100.1), wherein the power module (12) is electrically connected to the multifunctional frame (50) by a sleeve connection (117) with the introduction of at least one double-end pin (76, 78, 80, 82, 84, 86, 88, 90) and at least one sleeve (118). [2] Power module (12) according to claim 1, characterized by that the semiconductor components (42) are arranged individually or in groups (64, 66) on a base (96) of the power module (12). [3] Power module (12) according to claims 1 or 2, characterized bythat the power module (12) is connected to a cooling surface (106) either via an adhesive connection (108), a first solder connection (110) or a fourth weld connection (123). [4] Power module (12) according to claims 1 to 3, characterized by that the power module (12) is connected to the multifunctional frame (50) via a second welded joint (113) and a third welded joint (122). [5] Power module (12) according to claim 4, characterized by that the first welded joint (112) comprises a first weld layer (114), a second weld layer (115) and a third weld layer (116). [6] Power module (12) according to claims 1 to 5, characterized by that the multifunctional frame (50) is arranged above or below the power module (12) as seen in the Z direction (54). [7] Power module (12) according to claims 1 to 6, characterized bythat current-carrying components, in particular a T+ bridge and a T- bridge, are arranged one above the other or next to the other in the multifunctional frame (50) in such a way that a low-inductive connection is formed. [8] Power module (12) according to claims 1 to 7, characterized by that the one or more sleeves (118) are connected to the power module (12) via the second welded connection (113) or a second soldered connection (113). [9] Power module (12) according to claims 1 to 7, characterized by that the one or more double-ended pins (76, 78, 80, 82, 84, 86, 88, 90) and have a first side (126) and a second side (128). [10] Method for producing a power module (12) which is designed according to one of claims 1 to 9, in which - a first conductor structure (18) with a first contact area (18.2), - at least one second conductor structure (20A, 20B) with at least one external contact area (20A.2, 20B.2) and - a further, third conductor structure (22) having an external contact area (22.2) is provided, wherein - a multifunctional frame (50) with a printed circuit board (130) is assigned to the power module (12), - wherein an electrical connection of the power module (12) to the multifunctional frame (50) is made via at least one double-ended pin (76, 78, 80, 82, 84, 86, 88, 90), - groups (64, 66) of semiconductor components (42) are arranged in a first plane (60), which are spatially separated from a second plane (62) in the multifunctional frame (50), - wherein contact surfaces (68, 70) contacting the groups (64, 66) of semiconductor components (42) are arranged in the second plane (62).

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