Electromagnetic radiation emitting assembly and method for manufacturing an electromagnetic radiation emitting assembly

Abstract

Electromagnetic radiation emitting assembly (10) with - a carrier (12), - an electromagnetic radiation-emitting component (14) arranged above the support (12), - a potting material (18) that at least partially surrounds the electromagnetic radiation emitting component (14), in which phosphor for converting the electromagnetic radiation and heat-conducting particles for conducting heat generated during the operation of the electromagnetic radiation emitting assembly (10) are embedded, wherein near the electromagnetic radiation emitting component (14) the phosphor concentration in the potting material (18) is greater than the particle concentration of the heat-conducting particles in the potting material (18) and wherein a particle concentration of the heat-conducting particles in the potting material (18) near the electromagnetic radiation emitting component (14) is greater than in the potting material (18) far from the electromagnetic radiation emitting component (14).

Description

[0001] The invention relates to an electromagnetic radiation-emitting assembly and a method for manufacturing an electromagnetic radiation-emitting assembly.

[0002] Modern lighting systems increasingly utilize energy-efficient and high-intensity light sources such as LEDs (light-emitting diodes) or lasers, usually in the form of laser diodes. Unlike incandescent bulbs, which are thermal radiators, these light sources emit light within a narrowly defined spectral range, resulting in light that is nearly or even exactly monochromatic. One way to access wider spectral ranges is through light conversion, in which phosphors are irradiated with LEDs and / or laser diodes and, in turn, emit light of a different wavelength. For example, a phosphor-coated layer can be illuminated with LEDs or laser diodes and will then emit light of a different color, i.e., a different wavelength.For example, this technique can be used to convert the light from blue LEDs into white light by mixing in yellow light, which is generated by exciting a phosphor-containing layer.

[0003] Conversion coatings are thin layers of phosphors, such as silicate minerals, orthosilicates, garnets, or nitrides, applied to the surfaces of suitable substrates. These phosphor layers are typically mechanically fixed with binders and bonded to an optical system (lenses, collimators, etc.), with light coupling occurring, for example, via air or an immersion medium. To ensure optimal optical coupling between the optical system and the phosphor and to minimize light loss, the most direct optical connection possible should be achieved.

[0004] In the applications mentioned above, the phosphors are typically excited to emission using LEDs and / or laser diodes with high light output. The resulting thermal losses must be dissipated, for example via the substrate, to prevent overheating and thus thermally induced changes in the optical properties or even the destruction of the phosphor.

[0005] Phosphors, which are mostly in powder form, do not form mechanically stable layers—that is, abrasion- and / or scratch-resistant layers—without the additional use of binders such as silicones. Binders are also generally used to combine the phosphor particles into a single phase that can then be applied to suitable surfaces. However, when binders are used for layer stabilization, these binders themselves can interact with the phosphors, negatively affecting their optical and thermal properties, as well as their lifespan. Furthermore, the thermal conductivity of the binders often limits the dissipation of heat generated in the converter element.

[0006] Alternative converter elements are known that are formed from a ceramic or crystal encasing the phosphor. In particular, the phosphor itself can form the ceramic or crystal. Such converter elements can be bonded to LEDs to dissipate the heat generated within them. A limiting factor for heat dissipation is the thermal conductivity of the adhesive used. Furthermore, good heat dissipation is facilitated by making the converter elements particularly thin. However, a limiting factor for the thickness of the converter element is its decreasing stability and the necessary ease of handling when attaching it to the heat sink. This can lead to a high reject rate during the manufacturing process for very thin converter elements. The phosphor used is embedded in the ceramic or...The converter element is incorporated into the crystal structure and, in various embodiments, can be a phosphor mixture containing a blend of different phosphors, thereby enabling the generation of light that combines several different colors. The converter element can consist entirely or partially of crystal or ceramic. Regardless of its composition, the converter element can also incorporate a matrix material, such as diamond or Al₂O₃.

[0007] Furthermore, in electromagnetic radiation-emitting assemblies, which are hereinafter also referred to simply as assemblies, electromagnetic radiation-emitting components, which are hereinafter also referred to simply as components, are embedded in a potting compound containing the phosphor(s). In other words, the phosphors in these assemblies are embedded in the potting compound. The heat generated during light conversion is then dissipated via the potting compound.

[0008] Key parameters of LEDs are their lifespan and brightness. To achieve high brightness levels, LEDs are regularly operated at relatively high energy levels, which can lead to high operating temperatures because a significant amount of unused energy is converted into heat during the conversion process. However, increasing operating temperature reduces the lifespan, as the corresponding assembly becomes more susceptible to cracking and / or can age more rapidly. To ensure efficient and rapid heat dissipation, conversion layers are sometimes positioned close to the relevant components, allowing the heat generated in the conversion layers to be quickly dissipated via the component.The conversion layers close to the components, for example high-power LEDs, can be formed using methods such as EPD (electrophoretic deposition), spray coating and / or layer transfer, for example the transfer of ceramic or silicone plates or layers.

[0009] DE 10 2009 018 087 A1 describes a light-emitting device with a light source comprising at least one light-emitting diode and a wavelength-converting material arranged to surround at least one light-emitting diode. The wavelength-converting material consists of at least one transparent and one partially transparent material. The transparent wavelength-converting material is arranged to surround the LED at least in the direction of the light emitted by the light source. Part of the wavelength-converting material comprises a plurality of luminescent pigments for color conversion. Part of the wavelength-converting material comprises filler particles.

[0010] In various embodiments, an electromagnetic radiation-emitting assembly is provided that can be operated at high power, where heat generated during operation can be effectively dissipated and / or which has a long service life.

[0011] In various embodiments, a method for manufacturing an electromagnetic radiation-emitting assembly is provided, which enables the assembly to be operated at high power in a simple and cost-effective manner, allows heat generated during operation of the assembly to be effectively dissipated, and / or ensures that the assembly has a long service life.

[0012] In various embodiments, an electromagnetic radiation-emitting assembly is provided. The assembly has a support. An electromagnetic radiation-emitting component is arranged above the support. The electromagnetic radiation-emitting component is at least partially surrounded by a potting material in which phosphor for converting the electromagnetic radiation and heat-conducting particles for conducting heat generated during operation of the electromagnetic radiation-emitting assembly are embedded.

[0013] The thermally conductive particles are particles with high thermal conductivity. The potting compound has a carrier material, which can be a matrix polymer and / or, for example, silicone or resin, such as epoxy resin. The thermally conductive particles and the phosphor, which can be in the form of converter particles, for example, are embedded in the carrier material. The thermally conductive particles can be made of or composed of an inorganic material. The thermally conductive particles have a higher thermal conductivity than the carrier material. This reduces the thermal load on the carrier material, such as the matrix polymer. In the case of silicone, for example, the carrier material can have a thermal conductivity of 0.2 W / mK.The thermal conductivity of the heat-conducting particles can then be greater than 0.2 W / mK and, for example, range between 1.4 W / mK and 9 W / mK, whereby the potting material with the phosphor and the heat-conducting particles can, for example, have a thermal conductivity of approximately 0.5 W / mK or more.

[0014] The assembly can, for example, include a housing in which the carrier and / or the component are arranged and in which the potting material is encapsulated. The housing containing the carrier, the component, and the potting material can also be referred to as an LED package. The refractive index of the thermally conductive particles can be matched to the carrier material to minimize scattering losses.

[0015] The use of thermally conductive particles in combination with the phosphor in the potting compound contributes to particularly good thermal conductivity within the assembly and can, during operation, lead to rapid and / or excellent heat distribution within the potting compound and / or the assembly itself, and / or heat dissipation. In particular, the assembly exhibits high heat dissipation efficiency. This allows the assembly to operate at particularly high power levels. Furthermore, this can contribute to a particularly long service life for the assembly.

[0016] The fact that the electromagnetic radiation-emitting component is at least partially surrounded by the potting material can mean, for example, that the component has a first side facing away from the support, a second side facing the support, and side walls connecting the first and second sides, and that the potting material borders the first side and / or at least one, for example all, side walls of the component.

[0017] In various embodiments, the phosphor concentration in the potting compound near the electromagnetic radiation-emitting component is higher than in the potting compound farther away. In other words, the phosphor forms a conversion layer close to the chip. This ensures that the conversion of the electromagnetic radiation, hereinafter also referred to simply as radiation, occurs close to the component and that the resulting heat can be dissipated quickly and effectively via the component, the substrate, and / or the housing. The phosphor layer close to the component can be achieved, for example, by sedimentation of the phosphor in the potting compound. The phosphor concentration refers to the particle concentration of the particles containing the phosphor, for example, the phosphor particles themselves.

[0018] In various embodiments, the concentration of thermally conductive particles in the potting compound near the electromagnetic radiation-emitting component is higher than in the potting compound farther from the component. In other words, the thermally conductive particles form a heat-conducting particle layer close to the chip. This helps to ensure that the heat generated during operation can be transferred quickly and / or effectively to the component, the housing, and / or the substrate and dissipated via the component, the housing, and / or the substrate. The heat-conducting particle layer close to the component can be achieved, for example, by sedimentation of the thermally conductive particles in the potting compound.

[0019] Furthermore, in various embodiments, the phosphor concentration and the concentration of thermally conductive particles in the encapsulating material near the electromagnetic radiation-emitting component can be higher than in the encapsulating material farther away. In other words, the phosphors and the thermally conductive particles form a combined layer close to the chip. This can, for example, contribute to the particularly rapid and effective transfer of the heat generated during operation to the component, the substrate, and / or the housing, and its dissipation via these components, thereby enabling the component to operate at higher power and / or have a longer lifespan. The combined layer can be achieved, for example, by the simultaneous sedimentation of the phosphor-containing particles and the thermally conductive particles in the encapsulating material.

[0020] In various embodiments, the phosphor concentration in the potting compound near the electromagnetic radiation-emitting component is higher than the concentration of heat-conducting particles in the potting compound near the electromagnetic radiation-emitting component. For example, the phosphor layer can be formed downstream of the component, and the heat-conducting particle layer can be formed behind it (from the component's perspective). This can contribute to the conversion of the radiation near the component, enabling the heat to be dissipated quickly and effectively into the component, and also allowing the heat to be well distributed within the potting compound and / or dissipated via the housing. Optionally, potting compound with a very low proportion of phosphor particles and / or heat-conducting particles can be formed behind the heat-conducting particle layer (from the component's perspective).

[0021] In various embodiments, the phosphor concentration in the potting compound near the electromagnetic radiation-emitting component is lower than the particle concentration of the heat-conducting particles in the potting compound near the electromagnetic radiation-emitting component. For example, the heat-conducting particle layer can be formed downstream of the component, and the phosphor layer can be formed behind it (from the component's perspective). This can help to conduct heat from the phosphor layer to the component quickly and effectively. Optionally, potting compound with a very low proportion of phosphor and / or heat-conducting particles can be formed behind the heat-conducting particle layer (from the component's perspective).

[0022] In various embodiments, the phosphor concentration in the potting compound far from the electromagnetic radiation-emitting component is higher than the particle concentration of the thermally conductive particles in the potting compound far from the electromagnetic radiation-emitting component. For example, viewed from the component, a region may be formed in the potting compound behind the phosphor layer, the thermally conductive particle layer, and / or the combination layer, which has a low proportion of phosphor particles, but a higher proportion than the proportion of thermally conductive particles in the same region.

[0023] In various embodiments, the thermally conductive particles have a thermal conductivity in the range between 1 W / mK and 9 W / mK. This enables the heat generated during the operation of the assembly to be dissipated and / or distributed particularly well with the help of the thermally conductive particles.

[0024] In various embodiments, the thermal conductivity particles contain SiO2 and / or cristobalite.

[0025] In various embodiments, a method for manufacturing an electromagnetic radiation-emitting assembly, for example, the assembly described above, is provided, in which the electromagnetic radiation-emitting component is arranged above the support in the housing. The potting material is placed over the electromagnetic radiation-emitting component. The potting material is arranged such that it at least partially surrounds the electromagnetic radiation-emitting component. The potting material comprises phosphor for converting the electromagnetic radiation and thermally conductive particles for conducting heat generated during the operation of the electromagnetic radiation-emitting assembly.

[0026] In various embodiments, the potting compound and the phosphor particles are designed and the process parameters are specified such that the phosphors sediment in the potting compound in such a way that the phosphor concentration in the potting compound near the electromagnetic radiation-emitting component is higher than in the potting compound farther from the electromagnetic radiation-emitting component. Specifying the process parameters can mean, for example, that the process parameters are set and / or that the process is carried out under the specified process parameters. The process parameters can include, for example, the temperature of the environment and / or the potting compound, the viscosity of the carrier material, the density of the carrier material, and / or the particle size of the phosphor-containing particles and / or the heat-conducting particles.

[0027] In various embodiments, the potting material and the heat-conducting particles are designed and the process parameters are specified in such a way that the heat-conducting particles sediment in the potting material and the particle concentration of the heat-conducting particles in the potting material near the electromagnetic radiation-emitting component becomes greater than in the potting material far from the electromagnetic radiation-emitting component.

[0028] In various embodiments, the potting material, the phosphor particles and the thermally conductive particles are designed and the process parameters are specified in such a way that the phosphor particles and the thermally conductive particles sediment in the potting material and the phosphor concentration in the potting material near the electromagnetic radiation-emitting component becomes greater than the particle concentration of the thermally conductive particles in the potting material near the electromagnetic radiation-emitting component.

[0029] In various embodiments, the potting material, the phosphor particles and the thermally conductive particles are designed and the process parameters are specified in such a way that the phosphor particles and the thermally conductive particles sediment in the potting material and the phosphor concentration in the potting material near the electromagnetic radiation-emitting component becomes smaller than the particle concentration of the thermally conductive particles in the potting material near the electromagnetic radiation-emitting component.

[0030] In various embodiments, the potting material, the phosphor particles and the thermally conductive particles are designed and the process parameters are specified in such a way that the phosphor particles and the thermally conductive particles sediment in the potting material and the phosphor concentration in the potting material far from the electromagnetic radiation-emitting component becomes greater than the particle concentration of the thermally conductive particles in the potting material far from the electromagnetic radiation-emitting component.

[0031] In various embodiments, particles with a thermal conductivity in a range between 1 W / mK and 9 W / mK are used as heat-conducting particles, for example SiO2 or cristobalite.

[0032] Exemplary embodiments of the invention are shown in the figures and are explained in more detail below.

[0033] They show Fig. 1 an embodiment of an electromagnetic radiation-emitting assembly; Fig. 2 an embodiment of an electromagnetic radiation-emitting assembly; Fig. 3 an embodiment of an electromagnetic radiation-emitting assembly; Fig. 4 an embodiment of an electromagnetic radiation-emitting assembly; Fig. 5 an example of an electromagnetic radiation-emitting assembly not within the scope of the patent claims; Fig. 6 an example of an electromagnetic radiation-emitting assembly not within the scope of the patent claims.

[0034] The following detailed description refers to the accompanying drawings, which form part of this description and in which specific embodiments of the invention are shown for illustrative purposes. In this respect, directional terminology such as "top," "bottom," "front," "back," "anterior," "rear," etc., is used with reference to the orientation of the described figure(s). Since components of embodiments can be positioned in a number of different orientations, the directional terminology serves for illustrative purposes and is in no way limiting. It is understood that other embodiments may be used and structural or logical modifications may be made without deviating from the scope of protection of the present invention.It is understood that the features of the various embodiments described herein can be combined with one another, unless specifically stated otherwise. The following detailed description is therefore not to be interpreted as restrictive, and the scope of protection of the present invention is defined by the appended claims.

[0035] Within the scope of this description, the terms "connected," "attached," and "coupled" are used to describe both direct and indirect connections, direct or indirect links, and direct or indirect couplings. In the figures, identical or similar elements are labeled with identical reference symbols where appropriate.

[0036] An electromagnetic radiation-emitting assembly can comprise an electromagnetic radiation-emitting component and one, two, or more optically functional bodies, materials, and / or a housing. An optically functional body or material can influence and / or conduct electromagnetic radiation. Influencing the electromagnetic radiation can include, for example, scattering and / or converting it. An electromagnetic radiation-emitting component can be, for example, an electromagnetic radiation-emitting semiconductor device and / or be configured as an electromagnetic radiation-emitting diode, an organic electromagnetic radiation-emitting diode, an electromagnetic radiation-emitting transistor, or an organic electromagnetic radiation-emitting transistor.The radiation can be, for example, visible light, ultraviolet light, and / or infrared light. In this context, the electromagnetic radiation-emitting component can be, for example, a light-emitting diode (LED), an organic light-emitting diode (OLED), a light-emitting transistor, or an organic light-emitting transistor. The light-emitting component can be part of an integrated circuit in various embodiments. Furthermore, multiple light-emitting components can be provided in an electromagnetic radiation-emitting assembly, for example, housed in a common package.

[0037] The assembly emitting electromagnetic radiation is hereinafter also referred to simply as the assembly. The component emitting electromagnetic radiation is hereinafter also referred to simply as the component. The electromagnetic radiation is hereinafter also referred to simply as radiation.

[0038] The terms "translucent" and "translucent layer" can be understood in various ways to mean that a layer is permeable to light, for example, to the light generated by the light-emitting component, for example, to one or more wavelength ranges, such as light in a wavelength range of visible light (for example, at least in a subrange of the wavelength range from 380 nm to 780 nm). For example, the term "translucent layer" can also mean that essentially all the light coupled into a structure (for example, a layer) is coupled out of the structure (for example, layer), whereby some of the light may be scattered.

[0039] The term "transparent" or "transparent layer" can be understood in various embodiments to mean that a layer is permeable to light (for example, at least in a sub-range of the wavelength range from 380 nm to 780 nm), whereby light coupled into a structure (for example, a layer) is also coupled out of the structure (for example, layer) essentially without scattering or light conversion.

[0040] Fig. Figure 1 shows an embodiment of an electromagnetic radiation-emitting assembly 10. The assembly 10 comprises a support 12, an electromagnetic radiation-emitting component 14, a housing 16, and potting material 18. The component 14 is arranged above the support 12. The component 14 has a first side facing away from the support 12, a second side facing the support 12, and side walls connecting the first and second sides. The component 14 is designed, for example, as a surface emitter or as a volume emitter. The surface emitter emits the radiation from one of its sides, for example, the first side. The volume emitter emits the radiation not only from the first side but also from the side walls of the volume emitter. In other words, the component 14 can emit the radiation in a direction perpendicular to the surface of the support 12 and perpendicular to this direction, i.e., in a lateral direction.In this application, the lateral direction refers to a direction parallel to a surface of the support 12 on which the component 14 is arranged. The volume emitter can, for example, be a chip based on a sapphire substrate. The support 12 can, for example, comprise ceramic, metal, plastic, a semiconductor material, and / or resin, such as epoxy resin. The support 12 can, for example, be a conductor frame, a printed circuit board, and / or a substrate.

[0041] The component 14 is embedded in the potting compound 18, such that the first face and the side walls of the component 14 are in direct physical contact with the potting compound 18. In other words, the potting compound 18 borders the side walls and the first face of the component 14. The potting compound 18 can be described as an optically functional material. The potting compound 18 contains a phosphor for converting radiation generated by the component 14. The potting compound 18 has a carrier material, which can be, for example, silicone or resin, such as epoxy resin, and the phosphor, which can be in the form of phosphor-containing particles, such as phosphor particles. The carrier material can be transparent or translucent.

[0042] Common phosphors include garnets or nitrides, silicates, nitrides, oxides, phosphates, borates, oxynitrides, sulfides, selenides, aluminates, tungstates, and halides of aluminum, silicon, magnesium, calcium, barium, strontium, zinc, cadmium, manganese, indium, tungsten, and other transition metals, or rare earth metals such as yttrium, gadolinium, or lanthanum, doped with an activator such as copper, silver, aluminum, manganese, zinc, tin, lead, cerium, terbium, titanium, antimony, or europium. In various embodiments of the invention, the phosphor is an oxide or (oxy-)nitride phosphor, such as garnet, orthosilicate, nitrido(alumo)silicate, nitride, or nitridoorthosilicate, or a halide or halophosphate. Specific examples of suitable phosphors are strontium chloroapatite:Eu ((Sr,Ca)5(PO4)3Cl:Eu; SCAP), yttrium aluminum garnet:Cer (YAG:Ce) or CaAlSiN3:Eu. Furthermore, the phosphor can contain...Phosphor mixtures may contain, for example, particles with light-scattering properties and / or additives. Examples of additives include surfactants and organic solvents. Examples of light-scattering particles are gold, silver, and metal oxide particles.

[0043] In addition to the phosphor or phosphor particles, the potting compound contains 18 thermally conductive particles. These thermally conductive particles exhibit high thermal conductivity. The thermal conductivity of the thermally conductive particles is higher than that of the substrate material of the potting compound 18. For example, when silicone is used as the substrate, the thermal conductivity of the substrate material is approximately 0.2 W / mK, while the thermal conductivity of the thermally conductive particles is greater than 0.2 W / mK. For example, the thermal conductivity of the thermally conductive particles ranges from 0.2 W / mK to 10 W / mK, for instance, from 1.4 W / mK when SiO₂ particles are used as thermally conductive particles to 9 W / mK when Cristobalit particles are used as thermally conductive particles.The overall thermal conductivity of the potting compound 18 can, for example, range from 0.2 W / mK to 1 W / mK, for example, approximately 0.5 W / mK. The mean diameter of the thermally conductive particles can, for example, range from 1 µm to 10 µm, for example, from 4 µm to 7 µm. The weight fraction of the thermally conductive particles in the substrate material can, for example, range from 1% to 30%, for example, from 2% to 20%.

[0044] The phosphors are energetically excited by the radiation generated by component 14, which in this context can also be referred to as excitation radiation. During the subsequent de-energization, the phosphors emit light of one or more predefined colors. This involves a conversion of the excitation radiation, resulting in the generation of conversion radiation. During the conversion, the wavelengths of the excitation radiation are shifted to shorter or longer wavelengths. The colors can be single colors or mixed colors. The single colors can, for example, be green, red, or yellow light, and / or the mixed colors can, for example, be a mixture of green, red, and / or yellow light, and / or, for example, white light.Additionally, blue light can be provided, for example, by designing the potting material 18 such that at least partially unconverted excitation radiation exits the assembly 10 as usable illumination light. For example, green, red, and yellow can be represented using blue light. When using UV light as excitation radiation, the phosphors can also be selected to represent red, green, blue, and yellow.

[0045] The conversion of radiation generates heat, which can be distributed via the thermally conductive particles in the potting material and / or dissipated via the potting material. The heat can be conducted, for example, to the housing 16, the support 12, and / or the component 14 with the aid of the thermally conductive particles and dissipated via the housing 16, the support 12, or the component 14, and / or directly to the environment.

[0046] A reflector body can be formed on an inner surface of the housing 16 and / or on a side of the carrier 12 adjacent to the potting material 18. The reflector body can surround the potting material 24 in a later direction. The reflector body can, for example, be formed from a reflective layer. The reflector body can, for example, consist of silicone in which reflective particles, such as TiO2, are embedded.

[0047] The component 14 has electrical connections (not shown) for electrical contacting. For example, the component 14 may have two electrical connections on its first side, which are electrically contacted by means of bond wires (not shown) with corresponding electrical contact surfaces (not shown) on the carrier 12. Alternatively, the component 14 may have one, two, or more electrical connections on its side walls and / or its second side, which may be contacted with corresponding electrical contacts on the carrier 12.

[0048] When manufacturing the assembly 10, the carrier 12 can first be provided, for example, formed. The component 14 and, if applicable, the mirror layer 16 can be formed on the carrier 12. For example, the component 14 can be positioned and / or attached to the carrier 12 using an adhesive, such as solder or glue. Subsequently, the component 14 can be electrically connected. Alternatively, the positioning and electrical contacting of the component 14 can be carried out simultaneously, for example, if the component 14 has its electrical connections on the side walls and / or the second side.

[0049] The potting compound 18 can be applied to the component 14 within the housing 16 in a viscous or liquid state. The phosphors and thermally conductive particles can be mixed in the carrier material, for example, homogeneously. Subsequently, the potting compound 18 can be fully or at least partially solidified, for example, by drying and / or curing. The potting compound 18 can be designed, for example, such that bond wires and / or electrical contacts of the carrier 12 are fully or partially surrounded by and / or embedded in the potting compound 18. The potting compound 18 can be introduced into the housing, for example, by pressure, spraying, dripping, and / or dispensing.

[0050] Fig. Figure 2 shows an embodiment of an assembly 10, which can, for example, largely correspond to the assembly 10 described above. The potting material 18 has a phosphor region 20, a thermally conductive particle region 22, and a carrier material region 24. In the phosphor region 20, the phosphor concentration, for example, the particle concentration of the particles containing the phosphor, is significantly higher than outside the phosphor region 20. Thermally conductive particles may also be present in the phosphor region 20, but with a low concentration. For example, the concentration of thermally conductive particles in the phosphor region 20 is significantly lower than the concentration of the phosphor in the phosphor region 22. In the thermally conductive particle region 22, the concentration of thermally conductive particles, for example, the particle concentration of the thermally conductive particles, is significantly higher than outside the thermally conductive particle region 22.The thermally conductive particle area 22 may also contain phosphor, but at a low concentration. For example, the phosphor concentration in the thermally conductive particle area 22 is significantly lower than the thermally conductive particle concentration in the thermally conductive particle area 24. In the substrate area 24, the phosphor concentration and the thermally conductive particle density are particularly low, for example, zero or approximately zero. The substrate area 24 may be transparent or translucent. Furthermore, the phosphor area 20 and the thermally conductive particle area 22 may contain substrate material. In other words, the phosphors in the phosphor area 22 may be embedded in the substrate material, and the thermally conductive particles in the thermally conductive particle area 22 may be embedded in the substrate material. The phosphor area 20 may also be referred to as the phosphor layer.The thermally conductive particle area 22 can also be referred to as the thermally conductive particle layer.

[0051] The phosphor region 20 is located close to the component 14, for example, directly adjacent to the component 14. For example, the component 14 is embedded in the phosphor layer. From the perspective of the component 14, the thermally conductive particle region 22 is located behind the phosphor region 20, for example, directly adjacent to the phosphor region 20. From the perspective of the component 14, the substrate material region 24 is located behind the thermally conductive particle region 22, for example, directly adjacent to the thermally conductive particle region 22.

[0052] The phosphor layer 20 and / or the thermally conductive particle layer 22 can be formed, for example, by sedimentation of the phosphor particles or the thermally conductive particles in the carrier material. For example, the phosphor particles and the thermally conductive particles can first be mixed, for instance, homogeneously, in the carrier material. Then, the potting compound 18, containing the carrier material, the phosphors, and the thermally conductive particles, can be filled into the housing 16 and onto the component 14, for example, by dispensing. The process parameters are set such that the phosphor particles and the thermally conductive particles settle in the carrier material and form the phosphor layer or the thermally conductive particle layer.In particular, the process parameters are set so that the phosphors are deposited first, fastest, and / or most extensively, and especially before the heat-conducting particles and / or faster and / or more extensively than the heat-conducting particles. Furthermore, the process parameters are set so that the heat-conducting particles also deposit in the substrate material.

[0053] The process parameters can include, for example, the substrate material itself (e.g., the type of substrate), its viscosity, its temperature, the process duration, and / or the ambient temperature. For instance, sedimentation can occur at an ambient temperature between 27°C and 80°C, or between 35°C and 60°C. Temperature control can be achieved, for example, by heating the component 14, such as in a process oven. Furthermore, sedimentation can take place over a period of time between 1 and 10 hours, or between 3 and 6 hours. Alternatively or additionally, sedimentation can be forced and / or accelerated by centrifugation, in which case, for example, the rotational speed could be one of the process parameters.

[0054] The phosphor concentration in the potting material 18 is higher near the electromagnetic radiation-emitting component 14, for example in the phosphor area 20, than in the potting material 18 far from the electromagnetic radiation-emitting component 14, for example in the heat-conducting particle area 22 and / or the carrier material area 24.

[0055] The particle concentration of the heat-conducting particles in the potting material 18 is higher near the electromagnetic radiation-emitting component 14, for example in the heat-conducting particle area 22, than in the potting material 18 far from the electromagnetic radiation-emitting component 14, for example in the carrier material area 24.

[0056] The phosphor concentration in the potting material 18 near the electromagnetic radiation-emitting component 14, for example in the phosphor area 20, is greater than the particle concentration of the heat-conducting particles in the potting material 18 near the electromagnetic radiation-emitting component 14, for example in the phosphor area 20.

[0057] Fig. Figure 3 shows an embodiment of an assembly 10, which can, for example, largely correspond to one of the assemblies 10 described above. The assembly 10 has the phosphor region 20 and the thermally conductive particle region 22, but no carrier material region 24.

[0058] The phosphor region 20 and the thermally conductive particle region 22 can be formed, for example, using the method described above, in particular the sedimentation method. The process parameters are set such that, for example, only the phosphor particles settle in the substrate material and form the phosphor layer. This increases the relative concentration of thermally conductive particles in the remaining substrate material, thereby forming the thermally conductive particle layer. In particular, the process parameters can be set such that the phosphors settle and the thermally conductive particles do not.

[0059] The phosphor concentration of the phosphor in the potting material 18 is greater near the electromagnetic radiation-emitting component 14, for example in the phosphor area 20, than in the potting material 18 far from the electromagnetic radiation-emitting component 14, for example in the heat-conducting particle area 22.

[0060] The phosphor concentration in the potting material 18 near the electromagnetic radiation-emitting component 14, for example in the phosphor area 20, is greater than the particle concentration of the heat-conducting particles in the potting material 18 near the electromagnetic radiation-emitting component 14, for example in the phosphor area 20.

[0061] Fig. Figure 4 shows an embodiment of an assembly 10, which can, for example, largely correspond to one of the assemblies 10 described above. The assembly 10 has a combination area 26, which, for example, forms a combination layer, and the carrier material layer 24. The combination area 26 has a phosphor concentration and a thermally conductive particle concentration, both of which are higher than the phosphor concentration and the thermally conductive particle concentration outside the combination area 26. In other words, the phosphor particles and the thermally conductive particles in the carrier material form the combination layer 26.

[0062] The combination area 26 can be formed, for example, using the method described above, in particular the sedimentation method. The process parameters are set such that the phosphor particles and the thermally conductive particles are deposited equally in the substrate material and together form the combination layer. Specifically, the process parameters are set such that the phosphors and the thermally conductive particles are deposited in the substrate material at the same rate and / or to the same extent.

[0063] For example, the carrier material area 24, viewed from the component, may have a small proportion of phosphor particles behind the phosphor area 20, the thermal conductivity particle area 20 and / or the combination area 26, which is, however, larger than the proportion of thermal conductivity particles in the same area.

[0064] The phosphor concentration of the phosphor in the potting material 18 is greater near the electromagnetic radiation-emitting component 14, for example in the combination area 26, than in the potting material 18 far from the electromagnetic radiation-emitting component 14, for example in the carrier material area 24.

[0065] The particle concentration of the heat-conducting particles in the potting material 18 is higher near the electromagnetic radiation-emitting component 14, for example in the combination area 26, than in the potting material 18 far from the electromagnetic radiation-emitting component 14, for example in the carrier material area 24.

[0066] The phosphor concentration in the potting material 18 far from the electromagnetic radiation emitting component 14, for example in the support material area 24, can be greater than the particle concentration of the heat-conducting particles in the potting material 18 far from the electromagnetic radiation emitting component 14, for example in the support material area 24.

[0067] Fig. Figure 5 shows an example of an assembly 10 not within the scope of the claims, which may, for example, largely correspond to one of the assemblies 10 described above. The assembly 10 comprises the phosphor region 20, the thermally conductive particle region 22, and the substrate region 24. The thermally conductive particle region 22 is located close to the component 14, for example, directly adjacent to the component 14. For example, the component 14 is embedded in the thermally conductive particle layer. From the perspective of the component 14, the phosphor region 20 is located behind the phosphor region 20, for example, directly adjacent to the thermally conductive particle region 22. From the perspective of the component 14, the substrate region 24 is located behind the phosphor region 20, for example, directly adjacent to the phosphor region 20.

[0068] The phosphor layer 20, the thermally conductive particle layer 22, and the substrate layer 24 can be formed, for example, using the method described above, in particular the sedimentation process. The process parameters can be set such that the phosphor particles and the thermally conductive particles are deposited in the substrate and form the phosphor layer or the thermally conductive particle layer, respectively. In particular, the process parameters are set such that the thermally conductive particles are deposited first, fastest, and / or most extensively, and especially before the phosphors and / or faster and / or more extensively than the phosphors. Furthermore, the process parameters are set such that the phosphors are also deposited in the substrate.

[0069] The phosphor concentration in the potting material 18 near the electromagnetic radiation emitting component 14, for example in the heat-conducting particle area 22, is smaller than the particle concentration of the heat-conducting particles in the potting material 18 near the electromagnetic radiation emitting component 14, for example in the heat-conducting particle area 22.

[0070] The phosphor concentration in the potting material 18 far from the electromagnetic radiation emitting component 14, for example in the support material area 24, can be greater than the particle concentration of the heat-conducting particles in the potting material 18 far from the electromagnetic radiation emitting component 14, for example in the support material area 24.

[0071] Fig.Figure 6 shows an example of an assembly 10 not within the scope of the patent claims, which may, for example, largely correspond to one of the assemblies 10 described above. The assembly 10 has the phosphor region 20 and the thermally conductive particle region 22, but no carrier material region 24.

[0072] The phosphor region 20 and the thermally conductive particle region 22 can be formed, for example, using the method described above, in particular the sedimentation method. The process parameters are set such that, for example, only the thermally conductive particles settle in the substrate material and form the thermally conductive particle layer. This increases the relative phosphor concentration in the remaining substrate material, thereby forming the phosphor layer. In particular, the process parameters can be set such that the thermally conductive particles settle while the phosphor particles do not.

[0073] The phosphor concentration in the potting material 18 near the electromagnetic radiation emitting component 14, for example in the heat-conducting particle area 22, is smaller than the particle concentration of the heat-conducting particles in the potting material 18 near the electromagnetic radiation emitting component 14, for example in the heat-conducting particle area 22.

[0074] The phosphor concentration in the potting material 18 far from the electromagnetic radiation-emitting component 14, for example in the phosphor area 20, is greater than the particle concentration of the heat-conducting particles in the potting material 18 far from the electromagnetic radiation-emitting component 14, for example in the phosphor area 20.

[0075] The invention is not limited to the specified embodiments. For example, the component 10 can have more or fewer layers. Alternatively or additionally, the component 10 can have two, three, or more different phosphors and / or thermally conductive particles. Optionally, the different phosphors or thermally conductive particles can be arranged in the same or correspondingly different layers. Furthermore, the individual layers can be produced using a different method. For example, several dispensing processes can be carried out successively to produce the layers. Furthermore, two or more components 10 can be arranged in a housing 16 and / or on a support 12 and / or embedded in the potting material 18.

Claims

[1] Electromagnetic radiation emitting assembly (10) with - a carrier (12), - an electromagnetic radiation-emitting component (14) arranged above the support (12), - a potting material (18) that at least partially surrounds the electromagnetic radiation emitting component (14), in which phosphor for converting the electromagnetic radiation and heat-conducting particles for conducting heat generated during the operation of the electromagnetic radiation emitting assembly (10) are embedded, wherein near the electromagnetic radiation emitting component (14) the phosphor concentration in the potting material (18) is greater than the particle concentration of the heat-conducting particles in the potting material (18) and wherein a particle concentration of the heat-conducting particles in the potting material (18) near the electromagnetic radiation emitting component (14) is greater than in the potting material (18) far from the electromagnetic radiation emitting component (14). [2] Electromagnetic radiation emitting assembly (10) with - a carrier (12), - an electromagnetic radiation-emitting component (14) arranged above the support (12), - a potting material (18) that at least partially surrounds the electromagnetic radiation emitting component (14), in which phosphor for converting the electromagnetic radiation and heat-conducting particles for conducting heat generated during the operation of the electromagnetic radiation emitting assembly (10) are embedded, wherein near the electromagnetic radiation emitting component (14) the phosphor concentration in the potting material (18) is greater than the particle concentration of the heat-conducting particles in the potting material (18) and wherein far from the electromagnetic radiation emitting component (14) the phosphor concentration in the potting material (18) is greater than the particle concentration of the heat-conducting particles in the potting material (18). [3] Electromagnetic radiation emitting assembly (10) according to one of the preceding claims, wherein the phosphor concentration in the potting material (18) near the electromagnetic radiation emitting component (14) is greater than in the potting material (18) far from the electromagnetic radiation emitting component (14). [4] Electromagnetic radiation emitting assembly (10) according to one of the preceding claims, wherein the heat conducting particles have a thermal conductivity in a range between 1 W / mK and 9 W / mK. [5] Electromagnetic radiation emitting assembly (10) according to one of the preceding claims, wherein the thermal conducting particles comprise SiO2 and / or cristobalite. [6] Method for manufacturing an electromagnetic radiation-emitting assembly (10) wherein - an electromagnetic radiation emitting component (14) is arranged above a support (12),- a potting material (18) is arranged over the electromagnetic radiation-emitting component (14) such that the potting material (18) at least partially surrounds the electromagnetic radiation-emitting component (14), wherein phosphor for converting the electromagnetic radiation and heat-conducting particles for conducting heat generated during the operation of the electromagnetic radiation-emitting assembly (10) are embedded in the potting material (18), wherein the potting material (18), the phosphor particles and the heat-conducting particles are designed and process parameters are specified such that the phosphor particles and the heat-conducting particles sediment in the potting material (18) and, near the electromagnetic radiation-emitting component (14), the phosphor concentration in the potting material (18) becomes greater than the particle concentration of the heat-conducting particles in the potting material (18),and the particle concentration of the heat-conducting particles in the potting material (18) near the electromagnetic radiation-emitting component (14) is greater than in the potting material (18) far from the electromagnetic radiation-emitting component (14). [7] Method for manufacturing an electromagnetic radiation-emitting assembly (10) wherein - an electromagnetic radiation emitting component (14) is arranged above a support (12), - a potting material (18) is arranged over the electromagnetic radiation-emitting component (14) such that the potting material (18) at least partially surrounds the electromagnetic radiation-emitting component (14), wherein phosphor for converting the electromagnetic radiation and heat-conducting particles for conducting heat generated during the operation of the electromagnetic radiation-emitting assembly (10) are embedded in the potting material (18), wherein the potting material (18), the phosphor particles and the heat-conducting particles are designed and process parameters are specified in such a way thatthat the phosphor particles and the thermally conductive particles settle in the potting material (18) and that near the electromagnetic radiation-emitting component (14) the phosphor concentration in the potting material (18) becomes greater than the particle concentration of the thermally conductive particles in the potting material (18) and far from the electromagnetic radiation-emitting component (14) the phosphor concentration in the potting material (18) becomes greater than the particle concentration of the thermally conductive particles in the potting material (18). [8] Method according to one of claims 6 and 7, wherein the potting material (18) and the phosphor particles are designed and process parameters are specified such that the phosphors in the potting material sediment in such a way that the phosphor concentration in the potting material (18) near the electromagnetic radiation emitting component (14) is greater than in the potting material (18) far from the electromagnetic radiation emitting component (14). [9] Method according to any one of claims 6 to 8, wherein the heat-conducting particles used are particles having a thermal conductivity in a range between 1 W / mK and 9 W / mK.

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