Light-emitting element

Abstract

Light-emitting device comprising: a first conductive semiconductor layer; a mesa arranged on the first conductive semiconductor layer and comprising an active layer and a second conductive semiconductor layer arranged on the active layer; a current barrier layer partially arranged on the mesa; a transparent electrode arranged on the mesa, at least partially covering the current barrier layer, and comprising a first opening; a first electrode insulated from the second conductive semiconductor layer and comprising a first electrode pad and a first electrode extension extending from the first electrode pad;a second electrode arranged on the current barrier layer for electrical connection with the transparent electrode and comprising a second electrode pad and a second electrode extension extending from the second electrode pad, the second electrode pad filling the first opening, and an insulating layer partially arranged in a region under the first electrode, the mesa comprising at least one notch formed on a side face of the same such that the first conductive semiconductor layer is at least partially exposed through the notch; the insulating layer comprising an opening which at least partially exposes the exposed first conductive semiconductor layer; the first electrode extension comprising at least one extended contact section which contacts the first conductive semiconductor layer through the opening;the second electrode extension comprises a distal end with a width other than the average width of the second electrode extension, wherein the current barrier comprises a pad current barrier arranged below the second electrode pad and an extended current barrier section arranged below the second electrode extension, wherein the pad current barrier comprising a second opening exposing the second conductive semiconductor layer, wherein the transparent electrode covers an inner sidewall of the second opening of the pad current barrier, and wherein the first opening of the transparent electrode exposes the second conductive semiconductor layer in the second opening.

Description

[Technical field]

[0001] Exemplary embodiments of the present disclosure relate to a light-emitting device and, in particular, a light-emitting device which has a high current distribution efficiency to provide good properties with regard to light output and reliability. [State of the art]

[0002] In general, a light-emitting device, such as a light-emitting diode, comprises an n-type semiconductor layer for supplying electrons, a p-type semiconductor layer for supplying holes, and an active layer arranged between the n-type and p-type semiconductor layers. An n-type and a p-type electrode are positioned on the n-type and p-type semiconductor layers, respectively, to receive electrical energy from an external power source.

[0003] On the other hand, a nitride-based p-type semiconductor layer has a lower electrical conductivity than an n-type semiconductor layer. Therefore, electrical current is not distributed efficiently in the p-type semiconductor layer, causing current crowding in a specific region of the layer. When current crowding occurs, a light-emitting diode becomes susceptible to electrostatic discharge and can suffer from leakage current and efficiency loss. To achieve efficient current distribution, a transparent electrode, such as an indium tin oxide (ITO) electrode, is placed on the p-type semiconductor layer, and the p-type electrode is formed on the ITO layer. [Revelation][Technical Problem]

[0004] Exemplary embodiments of the present disclosure provide a light-emitting device designed to achieve a uniform current distribution in a horizontal direction.

[0005] Exemplary embodiments of the present disclosure provide a light-emitting device which provides a second electrode, a transparent electrode and a current barrier layer, which are connected to each other accordingly, in order to improve structural and electrical reliability.

[0006] Exemplary embodiments of the present disclosure provide a light-emitting device with improved bonding capability with respect to wire bonding. [Technical solution]

[0007] According to one aspect of the present invention, a light-emitting device comprises a first conductive semiconductor layer; a mesa arranged on the first conductive semiconductor layer and comprising an active layer and a second conductive semiconductor layer arranged on the active layer; a current barrier layer partially arranged on the mesa; a transparent electrode arranged on the mesa and at least partially covering the current barrier layer; a first electrode insulated from the second conductive semiconductor layer and comprising a first electrode pad and a first electrode extension extending from the first electrode pad;a second electrode arranged on the current barrier layer for electrical connection with the transparent electrode and comprising a second electrode pad and a second electrode extension extending from the second electrode pad, and an insulating layer partially arranged in a region beneath the first electrode, wherein the mesa comprises at least one notch formed on a side face of the same such that the first conductive semiconductor layer is at least partially exposed through the notch; the insulating layer comprises an opening which at least partially exposes the exposed first conductive semiconductor layer; the first electrode extension comprises at least one extended contact section which contacts the first conductive semiconductor layer through the opening; and the second electrode extension comprises a distal end having a width other than the average width of the second electrode extension.

[0008] The width of the distal end of the second electrode extension may be greater than the average width of the second electrode extension.

[0009] The distal end of the second electrode extension can have a circular shape, with a diameter of this being larger than a width of the second electrode extension.

[0010] The second electrode extension may include an additional extension which is bent in an extension direction of the second electrode extension, the additional extension being bent away from the first electrode extension.

[0011] The additional extension can be shaped into a curved form with a predetermined curvature.

[0012] The additional extension can be bent towards a corner of the light-emitting device.

[0013] The first electrode pad and the second electrode pad can be arranged along a longitudinal line that crosses a center of the light-emitting structure; the first electrode pad can be arranged adjacent to a first side face of the light-emitting device; and the second electrode pad can be arranged adjacent to a third side face of the light-emitting device opposite the first side face of the same.

[0014] The first electrode extension can extend in the direction of the first side surface along a second side surface of the light-emitting device arranged between the first side surface and the third side surface of the same; and the second electrode extension can be arranged closer to a fourth side surface of the light-emitting device opposite the second side surface of the same than the second side surface to the same and can extend in the direction of the third side surface of the same.

[0015] The shortest distance between the second electrode pad and the fourth side surface of the light-emitting device can be the same as the shortest distance between the distal end of the second electrode extension and the fourth side surface of the same.

[0016] The opening in the insulation layer can comprise a multitude of openings arranged at constant intervals along the second side surface.

[0017] The shortest distance between the first electrode extension and the second electrode extension can be greater than the distance from the distal end of the second electrode extension to the first electrode pad.

[0018] A distance between the openings of the insulation layer can be three or four times the width of the opening of the insulation layers, exposing the notch.

[0019] The current barrier layer can comprise a pad current barrier layer arranged between the second electrode pad and an extended current barrier layer section arranged below the second electrode extension.

[0020] The transparent electrode may comprise a first opening arranged on the pad current barrier layer; the second electrode pad may be arranged on the pad current barrier layer to fill the first opening, at least partially covering the transparent electrode arranged on the pad current barrier layer; and a top surface of the second electrode pad may have a surface profile corresponding to a top surface of the pad current barrier layer and a top surface of the transparent electrode arranged on the current barrier layer.

[0021] The pad current barrier layer can comprise a second opening exposing the second conductive semiconductor layer; the second electrode can contact the second conductive semiconductor layer through the second opening; the second opening can be arranged in a region of the first opening; and a top surface of the second electrode can comprise a first recess arranged corresponding to the first opening and a second recess arranged corresponding to the second opening.

[0022] The current barrier layer can comprise a first region surrounded by the second opening and a second region surrounded by the second opening; and an upper surface of the second electrode can be located in the first region of the current barrier layer and can comprise a projection extending beyond a lower surface of the second depression.

[0023] The insulating layer can be arranged on the mesa; the mesa can include at least one notch formed on a side surface of the same such that the first conductive semiconductor layer is at least partially exposed through the notch; and the opening of the insulating layer can at least partially expose the first conductive semiconductor layer exposed through the notch.

[0024] The first electrode pad and the first electrode extension can be arranged on the mesa, and the extended contact section can form an ohmic contact with the first conductive semiconductor layer exposed by the notch.

[0025] The insulating layer can be arranged on the first conductive semiconductor layer, and the extended contact section can comprise a first extended contact section and a second extended contact section, wherein the first extended contact section can be arranged along a side face of the mesa, and the second extended contact section can be arranged near a corner of the mesa to be adjacent to the first electrode pad.

[0026] The substrate can comprise a multitude of modified areas formed on at least one side surface of the same and have a band shape extending in a horizontal direction of the same, and a distance between a lowest modified area and a bottom surface of the substrate can be smaller than a distance between a highest modified area and a top surface of the substrate. [Beneficial effects]

[0027] According to the exemplary embodiments, the light-emitting device comprises a first electrode pad arranged in a central area of ​​a light-emitting structure in the longitudinal direction of the light-emitting structure, thus improving the efficiency of an electrode formation process, a packaging process and the like.

[0028] According to further exemplary embodiments, the light-emitting device comprises a first electrode extension that contacts the first conductive semiconductor layer through a contact point, thus minimizing lateral light loss with improved current distribution efficiency.

[0029] According to further exemplary embodiments of the light-emitting device, it has a second electrode extension with an additional extension in a curved shape and can thus be malleable for as long as possible while maintaining a distance between the second electrode extension and a first electrode pad, thus preventing current crowding at a distal end of the second electrode extension.

[0030] According to further exemplary embodiments of the light-emitting device, it has a second electrode arranged on a transparent electrode with an opening, and a section of the transparent electrode is arranged between the current barrier layer and the second electrode pad, thus improving the structural and electrical reliability of a second electrode.

[0031] Furthermore, if the light-emitting device exhibits improved wire bonding capability for bonding to the second electrode of the light-emitting device after wire bonding, a package of a light-emitting device can be provided with good reliability. [Description of the drawings]

[0032] Fig. 1A and Fig. Figure 1B are planar views of a light-emitting device according to an exemplary embodiment of the present disclosure.

[0033] Fig. 2(a) to (c) are sectional views of the light-emitting device according to the exemplary embodiment of the present disclosure.

[0034] Fig. 3 to Fig. Figure 6 shows enlarged planar views and enlarged sectional views of various modifications of a second electrode, a current barrier layer and a transparent electrode of the light-emitting device according to the exemplary embodiment of the present disclosure.

[0035] Fig. 7 and Fig. Figure 8 shows enlarged planar views of various modifications of a first electrode, a transparent electrode, and an insulating layer of the light-emitting device according to the exemplary embodiment of the present disclosure.

[0036] Fig. Figures 9(a) and (b) are planar views of different modifications of a first electrode extension and a second electrode extension of the light-emitting device according to the exemplary embodiment of the present disclosure.

[0037] Fig. Figure 10 is a sectional view of a light-emitting device according to further exemplary embodiments of the present disclosure.

[0038] Fig. Figure 11 is a planar view of the light-emitting device according to further exemplary embodiments of the present disclosure.

[0039] Fig. Figure 12 is a planar view of a light-emitting device according to further exemplary embodiments of the present disclosure.

[0040] Fig. Figure 13 is a sectional view of a light-emitting device package according to further exemplary embodiments of the present disclosure.

[0041] Fig. Figure 14 is a graph illustrating structural effects of a current barrier layer, a transparent electrode and a second electrode in examples. [Preferred embodiments]

[0042] Exemplary embodiments of the present disclosure are described in detail below with reference to the figures. The following embodiments are to be understood as examples to provide the skilled person with the core idea of ​​the present disclosure. Accordingly, the present disclosure is not limited to these embodiments and can be implemented in various other forms. In the figures, width, length, thickness, and the like may be exaggerated for clarity and descriptive purposes. When an element is described as "arranged above" or "arranged on" another element, it may be directly "arranged above" or "arranged on" the other element, or there may be elements positioned between them. In the figures and the description, identical reference numerals denote identical or functionally equivalent elements or elements with similar functions.

[0043] The following describes a light-emitting device according to exemplary embodiments of the present disclosure with regard to Fig. 1A to Fig. 9 described.

[0044] Fig. 1A and Fig. Figure 1B are planar views of a light-emitting device according to an exemplary embodiment of the present disclosure, wherein Fig. 1A places show from an enlarged area (a), line A-A', line B-B', line CC' and line D-D', and Fig. 1B shows widths and distances A1, A2, A3, A4, D1, and D2 between components. Fig. 2(a) to (c) are sectional views along lines A-A', BB' and CC' according to the Fig. 1A. Fig. Figure 3 shows an enlarged planar view and an enlarged sectional view of a second electrode of the light-emitting device according to the exemplary embodiment of the present disclosure, and Fig. 4 to Fig. Figure 6 shows enlarged planar views and enlarged sectional views of various modifications of the second electrode of the light-emitting device according to the exemplary embodiment of the present disclosure. Fig. Figure 7 is a sectional view of a first electrode of the light-emitting device according to the exemplary embodiment of the present disclosure, and Fig. Figure 8 is a sectional view of a modification of the first electrode of the light-emitting device according to the exemplary embodiment of the present disclosure. Fig. Figures 9(a) and (b) are planar views of a first electrode extension and a second electrode extension of the light-emitting device according to the exemplary embodiment of the present disclosure.

[0045] Referring to Fig. 1A to Fig. 9 The light-emitting device comprises a light-emitting structure 120, a current barrier layer 130 , a transparent electrode 140 , a first electrode 150 , and a second electrode 160 The light-emitting device can also be a substrate. 110 and an insulating layer 170 The light-emitting device also includes the first to fourth side surfaces. 101 , 102 , 103 , 104 The light-emitting device can have a rectangular shape with different longitudinal and transverse lengths, without being limited to this.

[0046] The substrate 110 It can be an insulating or conductive substrate. Furthermore, the substrate can be 110 a growth substrate for the growth of light-emitting structures 120The substrate may be a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like. In further exemplary embodiments, the substrate may be... 110 a secondary substrate to support the light-emitting structure 120 be. For example, the substrate 110 a sapphire substrate, in particular a structured sapphire substrate (PSS) whose upper surface has a predetermined structure, and wherein the substrate in this case is 110 a multitude of protrusions 110p on the top side of the same.

[0047] Furthermore, the substrate can 110 at least one modified area 111 include, which extends from at least one side surface of the substrate 110 extends in the horizontal direction. The modified areas 111 can occur during a division of the substrate 110train them to customize light-emitting devices. For example, the modified areas can 111 through internal processing of the substrate 110 can be formed by using a stealth laser. In this case, a distance from a lowest modified area can be established. 111 to one underside of the substrate 110 be smaller than that of a top modified area 111 to one side of the substrate 110 Considering the light that escapes through the side surfaces of the light-emitting device, the modified area 111 in a relatively lower area of ​​the substrate 110 If formed by a laser process, an extraction efficiency of the light-emitting structure can be determined. 120 further improve generated light.

[0048] In this exemplary embodiment, a first conductive semiconductor layer is 121arranged on the substrate 110 depicted. However, if the substrate 110 a growth substrate for growing semiconductor layers 121 , 123 , 125 is, the substrate 100 through a physical and / or chemical process after the semiconductor layers have grown 121 , 123 , 125 be removed.

[0049] The light-emitting structure 120 can the first conductive semiconductor layer 121 , a second conductive semiconductor layer 125 arranged on the first conductive semiconductor layer 121 , and an active layer 123 arranged between the first conductive semiconductor layer 121 and the second conductive semiconductor layer 125 include. Furthermore, the light-emitting structure can 120 a mesa 120m arranged on the first conductive semiconductor layer 121and encompassing the active layer 123 and the second conductive semiconductor layer 125 include.

[0050] The first conductive semiconductor layer 121 , the active layer 123 and the second conductive semiconductor layer 125 They can be grown in a chamber using a typical, well-known process, for example, MOCVD. Additionally, the first conductive semiconductor layer can be... 121 , the active layer 123 and the second conductive semiconductor layer 125 comprise a III-V nitride semiconductor material, for example a nitride semiconductor material such as (Al, Ga, In)N. The first conductive semiconductor layer 121 can be n-type dopants (for example, Si, Ge, and Sn), and the second conductive semiconductor layer 125 It can include p-type dopants (for example, Mg, Sr, and Ba) or vice versa. The active layer 123It can comprise a multi-quantum-well (MQW) structure, and the composition ratio of the active layer can be adjustable to a light of a desired wavelength range. In particular, in this exemplary embodiment, the second conductive semiconductor layer can be 125 be a p-type semiconductor layer.

[0051] The Mesa 120m is in some areas of the first conductive semiconductor layer 120 arranged such that the first conductive semiconductor layer 121 in areas where the mesa 120m is not trained, may be exposed. The Mesa 120m can be achieved by partially etching the second conductive semiconductor layer 125 and the active layer 123 be trained. Although the Mesa 120m which can take any form, for example the Mesa 120m along a side surface of the first conductive semiconductor layer 21It should be constructed as shown in the drawings. The Mesa 120m can be an inclined side face or a side face perpendicular to a top surface of the first conductive semiconductor layer 121 exhibit. In this exemplary embodiment, the Mesa 120m at least one notch 120g pressed into their side surface. The notches 120g can be formed along at least one side surface of the light-emitting device. For example, a multitude of notches can be formed. 120g along the second side surface of the light-emitting device, as shown in Fig. 1A shown, trained. The multitude of notches. 120g can essentially be arranged at constant intervals.

[0052] The Mesa 120m It may also exhibit a rough pattern (not shown) on its side surfaces. Additionally, the first conductive semiconductor layer may 121 and the substrate 110They also exhibit further rough patterns (not shown) on their side surfaces. These rough patterns can be formed by different structuring methods, such as dry etching and / or wet etching. Furthermore, the rough patterns can be formed in an isolation process in which a wafer is divided into individual light-emitting devices. With these structures, the light-emitting device can exhibit improved light extraction efficiency. It should be understood that other implementations are also possible. For the light-emitting device to have other structures (for example, a vertical structure) instead of the lateral structure, the top surface of the first conductive semiconductor layer can be... 121 not be exposed.

[0053] The electrical barrier layer 130 is at least partially attached to the second conductive semiconductor layer 125 arranged. The current barrier layer 130can be connected to the second electrode accordingly. 160 on the second conductive semiconductor layer 125 be arranged. The current barrier layer 130 can a pad current barrier layer 131 and an extended current barrier section 133 include the pad current barrier layer. 131 and the extended junction 133 can be used accordingly for a second electrode pad 161 and a second electrode extension 163 be arranged. The pad current barrier layer 131 This structure can be used adjacent to the first side surface 101 the light-emitting device and the extended current barrier section 133 can be arranged to separate from the first side surface 101 towards the third side surface 103 to extend as shown in the drawings.

[0054] The electrical barrier layer 130can prevent current crowding, which occurs through direct transfer of electric current supplied from the second electrode. 160 is caused by the semiconductor layers. Thus, the current barrier layer can 130 They possess insulating properties and can comprise an insulating material and be composed of a single layer or multiple layers. For example, the current barrier layer can... 130 SiO X or SiN X The barrier layer can include, or may include, a distributed Bragg reflector in which insulating materials with different refractive indices are stacked on top of each other. The barrier layer can be transparent, reflect, or selectively reflect light.

[0055] Additionally, the electrical barrier layer 130 a larger area than the second electrode 160 formed on the current barrier layer 130exhibit this structure. The second electrode can be used with this structure. 160 in an area where the current barrier layer 130 is formed, be arranged. Furthermore, the current barrier layer can 130 have sloping side surfaces, which reduces the risk of peeling or electrical opening of the transparent electrode. 140 at a corner (that is, an angled area) of the barrier layer 130 can be reduced.

[0056] The transparent electrode 140 can be applied to the second conductive semiconductor layer 125 be arranged and occupy an area of ​​the top side of the second conductive semiconductor layer 125 cover and part of the electrical barrier 130 The transparent electrode 140 can an opening 140a include, in part, the pad current barrier layer 131 exposes the opening 140a can be located at the pad current barrier layer 131and the transparent electrode 140 be arranged and the transparent electrode 140 can partially block the pad current barrier layer 131 cover. Furthermore, a side surface of the opening can 140a generally along a side surface of the pad current barrier layer 131 be trained.

[0057] The transparent electrode 140 A light-transmitting and electrically conductive material can, for example, include a conductive oxide or a light-transmitting metal layer. For example, the transparent electrode can... 140 at least one ITO (indium tin oxide), ZnO (zinc oxide), ZITO (zinc indium tin oxide), ZIO (zinc indium oxide), ZTO (zinc tin oxide), GITO (gallium indium tin oxide), GIO (gallium indium oxide), GZO (gallium zinc oxide), AZO (aluminium-doped zinc oxide), FTO (fluorotin oxide), and a Ni / Au stack structure. Additionally, the transparent electrode may 140an ohmic contact with the second conductive semiconductor layer 125 In this exemplary embodiment, electric current can pass more efficiently through the transparent electrode. 140 be distributed, since the second electrode 160 not directly with the second conductive semiconductor layer 125 is in contact. The transparent electrode 140 will be discussed in more detail regarding Fig. 3 described below.

[0058] The transparent electrode 140 A depression can form around the notch. 120g the Mesa 120m include. As shown in an enlarged circle of the Fig. 1A can be used to deepen the transparent electrode 140 along the notch 120g the Mesa 120m be formed. With this structure, in which the transparent electrode encompasses the depression, an edge line of the transparent electrode can be formed. 140also along an edge line of the mesa 120m be formed. With this structure, in which the depression on the transparent electrode 140 If a short circuit is formed, it is possible to cause a short circuit due to the formation of the transparent electrode on a side surface of the notch. 120g to prevent this during the manufacture of the light-emitting device.

[0059] The second electrode 160 is on the second conductive semiconductor layer 125 arranged in such a way that at least part of the second electrode 160 is located in an area where the current barrier layer is positioned. The second electrode 160 Can a second electrode pad be used? 161 and a second electrode extension 163 include those located at the pad current barrier layer 131 or the extended current barrier section 133 It can be arranged in this way. Thus, part of the transparent electrode can be140 between the second electrode 160 and the barrier layer 130 The second electrode pad must be inserted. 161 can at the opening 140a the transparent electrode 140 be arranged. The second electrode pad 161 can be seen at the transparent electrode 140 adjacent and the side surface of the opening 140a the transparent electrode 140 can at least partially be done on the second electrode pad 161 adjacent. The second electrode pad 161 It can be arranged to allow light emission through an entire area of ​​the active layer of the light-emitting device by efficiently distributing electric current, without being limited to this. For example, as shown in the drawings, the second electrode pad can 161 adjacent to the first side surface 101 opposite the third area 103 , to which the first electrode pad151 adjacent, be arranged.

[0060] The second electrode extension 163 extends from the second electrode pad 161 In this exemplary embodiment, the second electrode extension can 163 from the second electrode pad 161 towards the third side surface 103 extend. Furthermore, the direction of extension of the second electrode extension can 163 depending on the extent of the second electrode extension 163 They can vary. For example, a distal end of the second electrode extension may 163 be bent in such a way as to point towards a space between the third side surface 103 and the fourth side surface 104 to be directed towards the light-emitting device. This structure can be determined by considering the distance between the first electrode pad. 151 and the second electrode extension 162They can be designed in different ways. The transparent electrode 140 is arranged between at least part of the second electrode extension 163 and the extended current barrier section 133 , wherein the second electrode extension 163 The transparent electrode is electrically contacted.

[0061] Furthermore, the second electrode extension 163 an additional extension 163a include those extending in a direction other than the extension direction of the second electrode extension 163 is curved. In this case, the additional extension can be... 163a from the first electrode extension 153 be bent away. Furthermore, the additional extension 163a be bent towards a corner of the light-emitting device, for example, towards a corner between the third side surface 103 and the fourth side surface 104 As in Fig. As shown in 1A, the additional extension 163a the second electrode extension 163 comprise a curved shape with a predetermined radius of curvature. Although a longer length of the second electrode extension 163 A distance that is too short from the distal end can provide a further improved power distribution efficiency. 163e the second electrode extension 163 to the first electrode pad 151 a current crowding at the distal end 163e the second electrode extension 163 cause. According to this exemplary embodiment, the second electrode extension 163 bent and the additional extension 163a is formed in a curved shape with a predetermined radius of curvature, wherein the distance between the second electrode extension 163 and the first electrode pad 151It can be held at a predetermined value or higher. With this structure, the light-emitting device can be positioned at the distal end. 163e the second electrode extension 163 to prevent electricity crowding.

[0062] Furthermore, the distal end 163e the second electrode extension 163 include a section whose width is greater than the average width of the second electrode extension 163 As exemplified in Fig. As shown in 9(b), the distal end 163e the second electrode extension 163 be formed in a circular shape, the diameter of which is larger than the width of the second electrode extension 163 In this embodiment, the diameter of the distal end can be 163e be larger than the width of the second electrode extension 163approximately 0.5 μm to 5 μm. However, it should be understood that other implementations are also possible and that the shape of the distal end 163e the second electrode extension 163 It can be modified into different shapes, including a polygonal shape, an oval shape, a circular arc shape, and the like.

[0063] With the structure in which the distal end 163e the second electrode extension 163 Since it encompasses a relatively large width, it is possible to achieve a current distribution around the distal end. 163e the second electrode extension 163 to improve. Furthermore, the distal end includes 163e the second electrode extension 163 an enlarged area, thereby efficiently preventing failure of the light-emitting device due to separation of the second electrode extension. 163 from the transparent electrode 140 at the distal end 163ethe second electrode extension 163 is prevented, while an increase in contact resistance at the distal end 163e the second electrode extension 163 is prevented. Since the second electrode 160 Generally, when formed by photolithography, there is a problem regarding development around the distal end. 163e the second electrode 160 It may be inefficiently feasible. However, the structure of the distal end includes 163e the second electrode extension 163 a relatively large area, whereby a process margin should also be provided after photolithography, so that a failure in the formation of the second electrode can be avoided. 160 prevent this. Consequently, the light-emitting device can exhibit further improved reliability.

[0064] The arrangement of the second electrode 160is not limited to this and can be modified and changed in different ways depending on the shape of the light-emitting device.

[0065] The second electrode 160 It can comprise a metallic material, for example Ti, Pt, Au, Cr, Ni, Al and the like, and can be composed as a single layer or multiple layers. For example, the second electrode can 160 at least one metal stack structure comprising Ti / Au layers, Ti / Pt / Au layers, Cr / Au layers, Cr / Pt / Au layers, Ni / Au layers, Ni / Pt / Au layers and Cr / Al / Cr / Ni / Au layers.

[0066] In relation to Fig. 3. An interconnection ratio between the pad current barrier layer will be determined. 131 , the transparent electrode 140 and the second electrode pad 161 Described in more detail.

[0067] As in Fig. As shown in 3(a) and (b), the pad current barrier layer131 generally have a circular shape in planar view. Alternatively, the pad current barrier layer can 131 can be formed in different shapes, encompassing a polygonal shape and can be in a similar shape corresponding to the second electrode pad 161 It must be formed in a planar view. The transparent electrode 140 can be a side surface of the pad current barrier layer 131 and its upper section, in particular around an outer circumference of the pad current barrier layer 131 , cover. In the structure in which the transparent electrode 140 partially the pad current barrier layer 131 Covered, a surface profile can be composed of a top side of the transparent electrode. 140 and a top surface of the pad current barrier layer 131 adopt a round or stepped profile instead of a flat profile.

[0068] At least part of the opening 140athe transparent electrode 140 can be applied to the pad current barrier layer 131 be arranged and in this exemplary embodiment the shape of the opening can 140a a form of an outer perimeter of the current barrier layer 130 correspond. As exemplified in Fig. As shown in 3, it comprises a pad current barrier structure. 131 a circular shape, with the transparent electrode 140 an area around its circular circumference covered in such a way that the opening 140a It can be formed in a circular shape. The opening 140a is in a shape corresponding to the shape of the outer circumference of the pad current barrier layer 131 Once formed, the transparent electrode can be detached. 140 from the electrical barrier 130 prevent. It should be understood that the opening 140ais not limited to this and can encompass different forms. Additionally, it can have a variety of openings. 140a be available.

[0069] A contact resistance between the second electrode pad 161 and the second conductive semiconductor layer 125 is higher than the contact resistance between the transparent electrode 140 and the second conductive semiconductor layer 125 Thus, the electric current flows to the transparent electrode. 140 with lower resistance and can be efficiently routed through the transparent electrode 140 be distributable in a horizontal direction when an electric current passes through the second electrode pad 161 is conducted. Furthermore, in this exemplary embodiment, the second electrode pad 161 not directly with the second conductive semiconductor layer 125 connected, thus enabling more efficient power distribution.

[0070] The second electrode 160 can the first opening 140a fill to fill the electrical barrier layer 130 to contact and can also partially use the transparent electrode 140 arranged on the current barrier layer 130 cover. Accordingly, the second electrode makes contact. 160 especially the second electrode pad 161 the transparent electrode 140 In this case, a horizontal area of ​​the second electrode pad can be seen. 161 be larger than the area of ​​the opening 140a the transparent electrode 140 , which opens 140a through the second electrode pad 161 It can be covered. How Fig. As shown in section 3, the second electrode pad can be used. 161 have a circular shape with a radius R1 and the opening 140a the transparent electrode 140It can have a circular shape with a radius R2. R1 is larger than R2. The sizes of R1 and R2 can be used to provide an area for sufficient wire bonding and to prevent separation of the second electrode pad. 161 and the transparent electrode 140 R1 can be adjusted. R1 can be approximately 5 μm to 15 μm larger than R2. For example, the second electrode pad can be 161 encompass a radius of approximately 35 μm and the opening 140a the transparent electrode 140 can have a radius R2 of approximately 25 μm.

[0071] The second electrode pad 161 It may have a non-planar top surface. In particular, the top surface of the second electrode pad may be non-planar. 161 a surface profile corresponding to the surface profile of the top side of the transparent electrode 140 and the top of the pad's electrical barrier layer 131 exhibit this. This means that the second electrode pad161 on the transparent electrode 140 and the pad current barrier layer 131 can be arranged which do not have flat surface profiles and thus have a rounded or stepped surface. As in Fig. As shown in section 3, the top of the second electrode pad can be viewed. 161 at least one in-depth study 161g arranged in an area where the opening 140a is positioned, exhibiting. Consequently, the top of the second electrode pad can 161 have a stepped surface. In particular, the depression can 161g in a circular shape, as in Fig. 3(a) shown. Accordingly, in the structure in which the second electrode pad is formed in a circular structure, the outer circumference of the second electrode pad can be 161 and the scope of the in-depth study 161g be formed in concentric circular shapes.

[0072] In the structure in which the second electrode pad 161 if it has a non-flat surface profile, it can be wire-bonded to the top of the second electrode pad. 161 a bonding capability between one wire and the second electrode pad 161 This structure allows the light-emitting device to efficiently separate the wire in an area where the wire is connected to the second electrode pad. 161 It is bonded, to prevent this. Furthermore, the second electrode pad 161 on the transparent electrode 140 and the pad current barrier layer 131 If the electrode pads are arranged in a way that prevents them from having flat surface profiles, then the second electrode pad cannot be detached. 161 from the electrical barrier 130 and / or the transparent electrode 140 prevent. That is, since the second electrode pad 161can be arranged more stably in the structure, with the second electrode pad 161 on a stepped or rounded surface than in the structure in which the second electrode pad 161 formed in a flat surface, is the second electrode pad 161 protected from detachment. Furthermore, since a section of the transparent electrode 140 between the pad current barrier layer 131 and the second electrode pad 161 If the transparent electrode is arranged in a more stable manner, separation of the transparent electrode is possible. 140 prevent this. Accordingly, structural stability between the second electrode can be prevented. 160 , the current barrier layer 130 and the transparent electrode 140 It should be improved.

[0073] Fig. 4 to Fig. Figure 6 shows planar and sectional views of a current barrier layer, a transparent electrode, and a second electrode according to various exemplary embodiments of the present disclosure. In the following exemplary embodiments, reference numerals of the components are designated with different hundreds digits. For example, in Fig. 3 is the current barrier layer with 130 designated, whereas in Fig. 4 the current barrier layer with 230 This is designated. This is provided for convenient description, and the physical properties of each component are the same as already described above for the corresponding components.

[0074] First, regarding Fig. 4. According to this exemplary embodiment, a transparent electrode can be used. 240 a first opening 240a include and a pad current barrier layer 231 can a second opening 231a, which is the second conductive semiconductor layer 125 exposes, encompass. Accordingly, a second electrode pad makes contact. 261 the second conductive semiconductor layer 125 through the second opening 231a .

[0075] The second opening 231a can in an area where the first opening 240a is placed, arranged, and the second electrode 240 can define the outer perimeter of an area of ​​the pad current barrier layer 231 cover. Accordingly, a stepped surface profile is composed of a top surface of the transparent electrode. 240 , a top surface of the pad current barrier layer 231 and a top surface of the second conductive semiconductor layer 125 under the second opening 231a formed. Accordingly, the upper side of the second electrode pad can be 261 a first in-depth 261ga arranged according to the first opening 240ainclude and a second depth 261gb arranged according to the second opening 231a .

[0076] In this exemplary embodiment, a horizontal area of ​​the second electrode pad can be 261 be larger than the area of ​​the first opening 240a the transparent electrode 240 and a horizontal area of ​​the first opening 240a can be larger than the second opening 231a Accordingly, the openings can 240a , 231a through the second electrode pad 261 be covered. As in Fig. As shown in section 4, the second electrode pad can be used. 261 be formed in a circular shape with a radius R1, the first opening 240a the transparent electrode 240 can be formed as a circular shape with a radius R2, and the second opening 231aIt can be formed as a circular shape with a radius R3. In this case, R1 is larger than R2, which is larger than R3. The sizes of R1 to R3 can be adjusted to provide a sufficiently large area for wire bonding and to prevent separation of the second electrode pad. 261 and the transparent electrode 240 .

[0077] Since the pad current barrier layer 231 the second opening 231a This includes several steps and curves on the top of the second electrode pad. 261 formed. With this structure, the second electrode pad can be formed. 261 to be arranged more stably and allows a wire to be bonded more stably after wire bonding.

[0078] Next, referring to Fig. 5 includes a transparent electrode 340 a first opening 340a and a pad current barrier layer 331 comprehensively a second opening 231a, which is the second conductive semiconductor layer 125 exposes. Furthermore, the transparent electrode can 340 the pad current barrier layer 331 cover. In particular, as in Fig. Figure 5 shows the transparent electrode 340 one side surface of the second opening 331a the pad current barrier layer 331 cover. Accordingly, a second electrode pad can be used. 361 the second conductive semiconductor layer 125 through the second opening 331a and the first opening 340a contact.

[0079] The top side of the second electrode pad 361 can a deeper 361g arranged according to the first opening 340a include. According to this exemplary embodiment, the pad current barrier layer includes 331 the second opening 331a and covers the transparent electrode 340 Thus, the top side of the second electrode pad can be 361a deeper 361g include, whose depth is greater than the thickness of the pad current barrier layer 331 Additionally, the deepening 361g of the second electrode pad 361 deeper than the deepening of Fig. 3.

[0080] Furthermore, as in Fig. As shown in section 5, the second electrode pad can be used. 361 be formed in a circular shape with a radius R1, the first opening 340a the transparent electrode 340 can be formed in a circular shape with a radius R2 and the second opening 331a It can be formed in a circular shape with a radius R3. In this case, R1 is larger than R2, which is larger than R3. The sizes of R1 to R3 can be adjusted to provide a sufficiently large area for wire bonding and to prevent separation of the second electrode pad. 361 and the transparent electrode 340 .

[0081] In relation to Fig. 6 can be a pad current barrier layer 431 a second opening 431a include the second conductive semiconductor layer 125 reveals, a first section 4311 , which is surrounded by the second opening, and a second section 4312 , which is the second opening 431a surrounds. A transparent electrode 440 may partially encompass the outer perimeter of the second section 4312 the pad current barrier layer 431 cover. In this exemplary embodiment, a top surface of the second section is covered. 4312 partially exposed. Accordingly, a surface profile is shown, in which the top side of a transparent electrode is visible. 440 , a top side of the second section 4312 the pad current barrier layer 431 , a top surface of the second conductive semiconductor layer 125 under the second opening 431aand the top of the first section 4311 formed with steps. Accordingly, the upper side of a second electrode pad can be 461 a first in-depth 461ga arranged according to the first opening 440a , a second indentation 461gb arranged according to the second opening 431a and a lead 461p arranged according to the first section 4311 include.

[0082] Since the pad current barrier layer 431 the first section 4311 surrounded by the second opening 431a and the second opening 431a This includes more steps and curves on the top of the second electrode pad. 461 formed. With this structure, the second electrode pad can be 461 It can be arranged more stably and allows a wire to be bonded more stably after wire bonding.

[0083] On the other hand, in the exemplary embodiments of the Fig. 4 to Fig. 6 each of the second electrodes 260 , 360 , 460 the second conductive semiconductor layer 125 contact. In this case, a subside of each of the second electrodes can be used. 260 , 360 , 460 be designed in such a way that there is a weak ohmic contact between each of the second electrodes 260 , 360 , 460 and the second conductive semiconductor layer 125 is formed and a high contact resistance is formed at the intermediate surfaces. For example, each of the second electrodes can 260 , 360 , 460 be formed in a multilayer structure, the lowest layer of which is a material for forming a weak ohmic contact with the second conductive semiconductor layer 125is designed accordingly. When an electric current is applied, the electric current flows to the transparent electrodes. 240 , 340 or 440 with a relatively low resistance at their surface, thus preventing a reduction in current distribution efficiency.

[0084] Although different structures of the second electrode, the transparent electrode and the current barrier layer have been described above according to various exemplary embodiments, it should be understood that other implementations are also possible.

[0085] repeatedly referring to Fig. 1A to Fig. 3 is the first electrode 150 electrically with the first conductive semiconductor layer 121 connected. The first electrode 150 can form an ohmic contact and can be electrically contacted to the exposed top surface of the first conductive semiconductor layer121 , which is achieved by partially removing the second conductive semiconductor layer 125 and the active layer 123 is exposed. The first electrode 150 can a first electrode pad 151 and an initial electrode extension 153 include the first electrode extension 153 includes at least an extended contact section 153a The extended contact section 153a can establish an ohmic contact with the first conductive semiconductor layer 121 form. In this exemplary embodiment, parts of the first electrode pad and the first electrode extension can be formed. 153 on the mesa 120m be arranged and the insulation layer 170 can between the Mesa 120m and parts of the first electrode 150 be arranged.

[0086] The first electrode 150can act as a conductor through which electric current flows from an external energy source to the first conductive semiconductor layer 121 is supplied and can comprise a metallic material, for example Ti, Pt, Au, Cr, Ni, Al, and the like. Additionally, the first electrode can 150 It can be composed of a single layer or multiple layers.

[0087] The first electrode pad 151 can near the third face 103 the light-emitting device and the first electrode extension 153 can extend over the first side surface 101 along the third side surface 103 and the second side surface 102extend. Generally, in a rectangular light-emitting device, the first electrode pad is formed in a corner region of the light-emitting device. However, in the structure where the first electrode pad is formed in a corner region of the light-emitting device, part of a conductor frame may be damaged after ball bonding or wire bonding. Therefore, as in this exemplary embodiment, the first electrode is 151 in a central area of ​​the light-emitting structure 120 With proper training, process efficiency regarding bonding and packaging can be improved.

[0088] Presented here for the purpose of improving process efficiency by ensuring a suitable level of process margin after packaging, the first electrode pad can 151 from the outer side surfaces of the light-emitting structure 120They must be separated by at least 50 μm or more. However, if the first electrode pad 151 too far from the outer surface of the light-emitting structure 120 If separated, the light-emitting device may experience a deterioration in terms of light output in an outer circumferential region of the light-emitting structure. 120 suffer. Thus, the first electrode pad 151 preferably separated from the outer side surface of the light-emitting structure 120 approximately 50 μm to approximately 100 μm. However, it should be understood that other implementations are also possible.

[0089] The insulating layer 170 can be distinguished between the light-emitting structure 120 and the first electrode 150 be arranged and can be an opening 170a , which are through the notch 120g the Mesa 120m exposed first conductive semiconductor layer 121at least partially exposes, include.

[0090] As in Fig. Shown in 1A is part of the insulation layer. 170 under the first electrode pad 151 for electrically insulating the first electrode pad 151 from the second conductive semiconductor layer 125 arranged. Additionally, the area under the first electrode pad can be... 151 arranged insulation layer 170 cover a larger area than the first electrode pad 151 and can be a side surface of the light-emitting structure 120 cover. This structure allows the light-emitting device to efficiently prevent short circuits between the first electrode pad. 151 and the second conductive semiconductor layer 125 and a short circuit which, after wire bonding to the first electrode pad 151 can occur, prevent.

[0091] In a situation like in Fig. In the exemplary embodiment shown in 7, the area under the first electrode pad can be... 151 arranged insulation layer 170 from the transparent electrode 140 be separated. In this case, a defect in the insulation layer can cause a problem. 170 Leakage current caused by flowing back to the transparent electrode 140 This may be prevented. In other exemplary embodiments, such as in Fig. As shown in section 8, the area under the first electrode pad can be... 151 arranged insulation layer 170 at the transparent electrode 140 adjacent, while partially the side surface and the top surface of the transparent electrode 140 are covered. This structure makes it possible to prevent a short circuit that can occur if a bonding material runs along the side surface of the first electrode pad. 151 flows and the transparent electrode 140after bonding onto the top of the first electrode pad 151 contacted.

[0092] The opening 170a the insulation layer 170 can at least partially fill the notch 120g expose the extended contact section 153a is located in an area of ​​the first conductive semiconductor layer 121 arranged, which through the opening 170a and the notch 120g the Mesa 120m exposed for electrical contact of the first conductive semiconductor layer 121 is. Furthermore, the insulation layer covers 170 partially the side surface of the notch 120g to prevent a short circuit caused by contact between the first electrode extension 153 and the side surface of the light-emitting structure 120 .

[0093] In this way the first electrode pad is ready 151not with the first conductive semiconductor layer 121 in direct contact and the extended contact section 153a the first electrode extension 153 contacts the first conductive semiconductor layer 121 for forming an electrical contact, thereby enabling efficient current distribution in the horizontal direction after commissioning of the light-emitting device. In a structure where the first electrode 150 If it is an n-type electrode, electrons are drawn from the first electrode. 150 injected. Present in a structure in which the entirety of the first electrode extension 153 the first conductive semiconductor layer 121 When contacted, an electron density can be supplied by the first conductive semiconductor layer. 121 depending on the distance to the first electrode pad 151vary. In this case, current distribution efficiency may be reduced. Conversely, according to this exemplary embodiment, the first electrode extension contacts 153 the first conductive semiconductor layer 121 through the extended contact section 153a and further sections of the first electrode extension 153 are from the first conductive semiconductor layer 121 through the insulating layer 170 Accordingly, electrons are isolated from the light-emitting device through the extended contact section. 153a injected, thereby creating an electron injection density in a multitude of extended contact sections. 153a It can be kept similarly. Accordingly, electrons can be efficiently introduced into the light-emitting device through a section of the first electrode extension. 153 relatively far away from the first electrode pad 151are injected, thereby improving the power distribution efficiency of the light-emitting device.

[0094] In relation to Fig. 1B, a width of a contact section between the extended contact section 153a the first electrode extension 153 and the first conductive semiconductor layer 121 , that is, a width D1 of the opening 170a the insulation layer 170 can be smaller than a distance D2 between the openings 170a the insulation layer 170 Furthermore, the distance D2 between the openings can be 170a to three or more times the width D1 of the opening 170a be adapted, thereby providing a further improvement in terms of power distribution through the extended contact section 153a can be determined.

[0095] Furthermore, a distal end 153e the first electrode extension 153include a section whose width is greater than the average width of the first electrode extension 153 For example, as in the Fig. As shown in 9(a), the distal end 153e the first electrode extension 153 have a circular shape whose diameter is larger than the width of the first electrode extension 153 In this exemplary embodiment, the diameter of the distal end can be 153e be approximately 0.5 μm to approximately 5 μm larger than the width of the first electrode extension 153 However, it should be understood that other implementations are also possible and that the shape of the distal end 153e the first electrode extension 153 It can be modified into different shapes, including a polygonal shape, an oval shape, a circular arc shape, and the like.

[0096] With regard to the structure at the distal end 153ethe first electrode extension 153 It encompasses a relatively large width, making it possible to distribute current around the distal end. 153e the first electrode extension 153 to improve. Furthermore, the distal end includes 153e the first electrode extension 153 an enlarged area, thereby efficiently preventing failure of the light-emitting device by separating the first electrode extension 153 near the distal end 153e the first electrode extension 153 can be prevented. Since the first electrode 150 Generally, when formed by photolithography, there is a problem regarding development around the distal end. 153e the first electrode 150 It may be inefficiently feasible. However, the structure of the distal end includes 153e the first electrode extension 153a relatively large area, whereby a process margin is further provided after photolithography, so that a failure in the formation of the first electrode can be avoided. 150 prevent this. As a result, the reliability of the light-emitting device can be further improved.

[0097] On the other hand, the arrangement of the first electrode 150 and the second electrode 160 This is not limited to this and can be modified and changed in different ways depending on the shape of the light-emitting device. The arrangement of the first electrode pad 151 and the first electrode extension 153 depending on the placement of the second electrode pad 161 and the second electrode extension 163 will be changed.

[0098] For example, in relation to Fig. 1B is a distance A1 from the first electrode extension 153, which extend along the second side surface 102 the light-emitting device to the second electrode extension 163 extends greater than a distance A2 from the distal end 163e the second electrode extension 163 to the first electrode pad 151 The second electrode extension 163 extends along the first electrode pad 151 while maintaining a constant distance between the second electrode extension 163 to the first electrode extension 153 extending along the second side surface 102 This improves current distribution efficiency. Additionally, distance A2 is set smaller than distance A1, resulting in a current density beyond the distal end of the second electrode extension. 163 is reduced, thereby preventing a deterioration in terms of power distribution efficiency.

[0099] Furthermore, a distance A3 from the distal end can be 163e the second electrode extension 163 to the outer circumference of the transparent electrode 140 (the perimeter along the fourth face 104 ) essentially equal to a distance between the side surface of the second electrode pad 161 to the outer circumference of the transparent electrode 140 (the perimeter along the fourth face 104 ). In this case, the distance A3 can be between approximately 50 μm and 60 μm.

[0100] Furthermore, the second electrode extension 163 the fourth side surface 104 to be allocated to the light-emitting device as to its second side surface 102 As shown in the drawings, the second electrode extension 163 closer to the fourth face 104 the light-emitting device arranged as to the second side surface 102and can be separated from a longitudinal central line CL, with the central line CL passing through the center of the light-emitting device at a distance A4. The distance A4 can range from approximately 14 μm to 18 μm. Since the first electrode extension 153 near the second side surface 102 The second electrode extension is arranged 163 closer to the fourth side surface 104 be arranged as the second side surface 102 , in order to improve power distribution.

[0101] Fig. Figure 10 is a sectional view of a light-emitting device according to further exemplary embodiments of the present disclosure. The light-emitting device of the Fig. 10 is generally similar to the light-emitting device as in relation to Fig. 1A to Fig. 9 described with the exception that the light-emitting device according to this exemplary embodiment further comprises a reflective layer 510 arranged beneath the light-emitting structure 120 The following description will focus on the different properties of the light-emitting device according to this exemplary embodiment, and a detailed description of the individual components will be omitted.

[0102] In relation to Fig. 10. The light-emitting device comprises a light-emitting structure. 120 , a current barrier layer 130 , a transparent electrode 140 , a first electrode 150 , a second electrode 160 and a reflective layer 510 In addition, the light-emitting device further comprises a substrate. 110 and an insulating layer 170The light-emitting device can also have first to fourth side surfaces 101 , 102 , 103 , 104 include.

[0103] The reflective layer 510 can be found under the light-emitting structure 120 be arranged and further comprise the substrate in the structure of the light-emitting device 110 , the reflective layer can be located under the substrate 110 be arranged. The reflective layer 510 can be made from a light-reflecting material to reflect light emitted by the light-emitting structure 120 be educated.

[0104] The reflective layer 510 It can comprise a distributed Bragg reflector in which dielectric layers with different reflection indices are stacked relative to each other. In this exemplary embodiment, the reflecting layer can 510 a stack structure 511, in which a first dielectric layer with a first reflection index and a second dielectric layer with a second reflection index are arranged in a repeating pattern relative to each other and comprise an intermediate layer 513 arranged on one upper side of the stack structure 511 The intermediate layer 513 can be considered a bonding layer on which the stack structure 511 can be formed, serve, while interface properties of the first and second dielectric layers of the stacked structure 511 can be improved. Accordingly, the intermediate layer can be improved. 512 be formed with a greater thickness than any of the dielectric layers of the stacked structure 511 .

[0105] For example, the first dielectric layer may comprise TiO2 or be composed of TiO2, and the second dielectric layer may comprise SiO2 or be composed of SiO2. Furthermore, the intermediate layer 513SiO2 comprises or is formed from SiO2. In this structure, it lies beneath the layers of the stacked structure. 511 can be attached to the first intermediate layer 513 The adjacent dielectric layer may be the first dielectric layer. Accordingly, when considering the entire reflective layer, 510 , the reflective layer 510 They exhibit a stacked structure of different material layers. However, it should be understood that other implementations are also possible.

[0106] In the structure in which the reflective layer 510 under the substrate 110 is arranged, can be a bottom side of the substrate 110 exhibit an RMS roughness of 100 nm or less. This structure can be created by a surface planarization process, as known from the prior art. For example, the RMS roughness of the underside of the substrate can be 110be controllable by chemical-mechanical polishing. Since the underside of the substrate 110 If the substrate has an RMS roughness of 100 nm or less, it is possible to observe deterioration in bond strength or crack formation on the reflective layer caused by imbalance of the first dielectric layer or the second dielectric layer caused by the substrate. 110 to prevent high surface roughness after heat treatment at high temperatures.

[0107] The reflective layer 510 It may further include a layer of light-reflecting metal, or it may be formed from the light-reflecting metal instead of the stacked structure. 511 In this case, the layer formed from the light-reflecting metal can be composed of a single layer or multiple layers and can include Al, Au, Pt and the like.

[0108] Fig. Figure 11 is a planar view of a light-emitting device according to further exemplary embodiments of the present disclosure. The Fig. The light-emitting device shown in Figure 11 is generally similar to the light-emitting device described in relation to Fig. 1A to Fig. 9. The following description will focus on the different features of the light-emitting device according to this exemplary embodiment, and detailed descriptions of the same components will be omitted.

[0109] The light-emitting device according to this exemplary embodiment comprises a light-emitting structure. 120 , a current barrier layer 130 , a transparent electrode 140 , a first electrode 150 , and a second electrode 160 Additionally, the light-emitting device can further enhance a substrate. 110 , an insulating layer170 and a reflective layer 510 include the light-emitting device, which can encompass the first to fourth side surfaces. 101 , 102 , 103 , 104 The light-emitting device can have a rectangular shape with different longitudinal and transverse lengths, but is not limited to this.

[0110] According to this exemplary embodiment, the light-emitting device comprises a mesa 120m encompassing a notch 120g' with a circular arc shape in planar view. The notch 120g' is more strongly indented by the side surface of the mesa 120m than the notch 120g the Fig. 1A. Accordingly, the distance between the extended contact section can be 153a to the transparent electrode 140 be larger than that of the light-emitting device of the Fig. 1A to Fig. 9. Accordingly, the light-emitting device according to this exemplary embodiment can efficiently prevent a short circuit located near the extended contact section. 153a This can prevent [problems that may occur]. Furthermore, the width of a contact section between the extended contact section can be [adjusted / adjusted / etc.]. 153a and the first conductive semiconductor layer 121 be larger than that of the light-emitting device of the Fig. 1A to Fig. 9.

[0111] Furthermore, a distance A2' between the distal end can be 163e the second electrode extension 163 to the first electrode pad 151 be larger than that of the light-emitting device of the Fig. 1A to Fig. 9, and a distance A3' from the distal end 163e the second electrode extension 163 to the outer circumference of the transparent electrode 140 (the perimeter along the fourth face 104) can be smaller than that of the light-emitting device of the Fig. 1A to Fig. 9.

[0112] This means that in this exemplary embodiment, the shape and size of the notch 120g' the Mesa 120m and the arrangement of the first and second electrodes 150 , 160 can be modified in such a way as to further improve the current distribution efficiency depending on a drive current of the light-emitting device.

[0113] Fig. Figure 12 is a planar view of the light-emitting device according to further exemplary embodiments of the present disclosure. The light-emitting device of the Fig. 12 is generally described similarly to the light-emitting device with respect to Fig. 1A to Fig. 9. The following description will focus on the different features of the light-emitting device according to this exemplary embodiment, and a detailed description of the same components will be omitted.

[0114] The light-emitting device according to this exemplary embodiment comprises a light-emitting structure. 120 , a current barrier layer 130 , a transparent electrode 140 , a first electrode 150 , and a second electrode 160 Additionally, the light-emitting device can further comprise a substrate. 110 , an insulating layer 170 and a reflective layer 510 The light-emitting device can illuminate the first to fourth side surfaces. 101 , 102 , 103 , 104The light-emitting device can have a rectangular shape with different longitudinal and transverse lengths, but is not limited to this.

[0115] According to this exemplary embodiment, the first electrode 150 on the first conductive semiconductor layer 121 arranged. That is, the first electrode 150 can be arranged adjacent to a side surface of a mesa 120m instead of being arranged on the mesa 120m be. The insulating layer 170 can partially occur between the first electrode 150 and the first conductive semiconductor layer 121 be arranged. Furthermore, the insulation layer can 170 two or more openings 170a , which parts of the first conductive semiconductor layer 121 to expose, to include. In this exemplary embodiment, the first electrode extension includes 153a first extended contact section 153a and a second extended contact section 153b The first extended contact section 153a can the first conductive semiconductor layer 121 through the openings 170a formed along a long side surface of the mesa 120m contact. The second extended contact area 153b can be arranged adjacent to the first electrode pad 151 be arranged and have an ohmic contact with the first conductive semiconductor layer 121 exposed on the side surface of the mesa 120m form. In this exemplary embodiment, the second extended contact section can 153b near a corner of the mesa 120m be arranged. For example, in addition to the first extended contact section. 153a , the second extended contact section 153b formed to contact the first conductive semiconductor layer121 , resulting in a current distribution in an area near the first electrode pad 151 can be improved further.

[0116] Fig. Figure 13 is a sectional view of a light-emitting device package according to further exemplary embodiments of the present disclosure.

[0117] Referring to Fig. 13 comprises a light-emitting device package 600 a light-emitting device 100 , a first line 631 and a second line 633 , which is connected to the light-emitting device 100 are electrically connected and wires 611 , 613 Additionally, the package of the light-emitting device can 600 further include a base 620 and a reflector 623 .

[0118] The light-emitting device 100 can be based on 620be mounted, especially on the second line 633 or the first line 631 In this exemplary embodiment, the light-emitting device can 100 through the reflector 623 formed along a side surface of the base 620 be surrounded and the reflector 623 It includes an inclined surface for reflecting light. This improves the light output of the package of the light-emitting device.

[0119] The light-emitting device 100 One of the light-emitting devices can be described according to the exemplary embodiments with regard to Fig. 1A to Fig. 12 or a light-emitting device which can be provided by modifying this. As already described above, the second electrode pad comprises 161 the light-emitting device 100a non-flat surface profile and includes in particular a depression 161g corresponding to the opening 140a The second electrode pad 161 is to the second line 633 through the second wire 613 electrically connected.

[0120] In this exemplary embodiment, the second wire can 613 electrically with the second electrode pad 161 be electrically contacted by ball bonds. As in Fig. As shown in 13, after the ball bonding of the second wire 613 on the second electrode pad 161 by means of the deepening 161g on the surface of the second electrode pad 161 the second wire 613 stable to the second electrode pad 161be bonded. Accordingly, it is possible to improve the reliability of the package of the light-emitting device by preventing wire contact failure after packaging of the light-emitting device, while simultaneously preventing wire breaks caused by internal / external factors, even after the package of the light-emitting device has been manufactured.

[0121] Furthermore, the light-emitting device exhibits good current distribution efficiency, ensuring high efficiency even under high-current operating conditions. Accordingly, the complete light-emitting device package can be used even in high-current applications.

[0122] Although some exemplary embodiments have been described above, it should be understood that these embodiments are merely an illustration and that various modifications, variations and alterations can be made without deviating from the core idea of ​​the present disclosure.

Claims

[1] Light-emitting device comprising: a first conductive semiconductor layer; a mesa arranged on the first conductive semiconductor layer and comprising an active layer and a second conductive semiconductor layer arranged on the active layer; a current barrier layer partially arranged on the mesa; a transparent electrode arranged on the mesa and at least partially covering the barrier layer; a first electrode isolated from the second conductive semiconductor layer and comprising a first electrode pad and a first electrode extension extending from the first electrode pad; a second electrode arranged on the current barrier layer for electrical connection with the transparent electrode and comprising a second electrode pad and a second electrode extension spreading from the second electrode pad, and an insulating layer partially arranged in an area below the first electrode, wherein the mesa comprises at least one notch formed on a side surface thereof such that the first conductive semiconductor layer is at least partially exposed by the notch; the insulating layer includes an opening which at least partially exposes the exposed first conductive semiconductor layer; the first electrode extension comprises at least one extended contact section which contacts the first conductive semiconductor layer through the opening; and the second electrode extension comprises a distal end with a width other than the average width of the second electrode extension. [2] Light-emitting device according to claim 1, wherein the width of the distal end of the second electrode extension is greater than an average width of the second electrode extension. [3] Light-emitting device according to claim 2, wherein the distal end of the second electrode extension comprises a circular shape, the diameter of which is greater than the width of the second electrode extension. [4] Light-emitting device according to claim 1, wherein the second electrode extension comprises an additional extension which is bent in an extension direction of the second electrode extension, wherein the additional extension is bent away from the first electrode extension. [5] Light-emitting device according to claim 4, wherein the additional extension is formed into a curved shape with a predetermined curvature. [6] Light-emitting device according to claim 4, wherein the additional extension is bent towards a corner of the light-emitting device. [7] Light-emitting device according to claim 1, wherein the first electrode pad and the second electrode pad are arranged along a longitudinal line that passes through a center of the light-emitting structure; the first electrode pad is arranged adjacent to a first side surface of the light-emitting device; and the second electrode pad is arranged adjacent to a third side surface of the light-emitting device opposite the first side surface of the same. [8] Light-emitting device according to claim 7, wherein the first electrode extension extends in the direction of the first side surface along a second side surface of the light-emitting device arranged between the first side surface and the third side surface of the same; and the second electrode extension is arranged closer to a fourth side surface of the light-emitting device opposite the second side surface of the same than the second side surface to the same and extends in the direction of the third side surface of the same. [9] Light-emitting device according to claim 8, wherein the shortest distance between the second electrode pad and the fourth side surface of the light-emitting device is equal to the shortest distance between the distal end of the second electrode extension and the fourth side surface of the same. [10] Light-emitting device according to claim 7, wherein the opening of the insulating layer comprises a plurality of openings arranged at constant intervals along the second side surface. [11] Light-emitting device according to claim 1, wherein the shortest distance between the first electrode extension and the second electrode extension is greater than the distance from the distal end of the second electrode extension to the first electrode pad. [12] Light-emitting device according to claim 1, wherein a distance between the openings of the insulating layer is three or four times the width of the opening of the insulating layers, exposing the notch. [13] Light-emitting device according to claim 1, wherein the current barrier layer comprises a pad current barrier layer arranged between the second electrode pad and an extended current barrier layer section arranged below the second electrode extension. [14] Light-emitting device according to claim 13, wherein the transparent electrode comprises a first opening arranged on the pad current barrier layer; the second electrode pad is arranged on the pad current barrier layer to fill the first opening, at least partially covering the transparent electrode arranged on the pad current barrier layer; and a top surface of the second electrode pad has a surface profile corresponding to a top surface of the pad current barrier layer and a top surface of the transparent electrode arranged on the current barrier layer. [15] Light-emitting device according to claim 14, wherein the pad current barrier layer comprises a second opening exposing the second conductive semiconductor layer, the second electrode contacts the second conductive semiconductor layer through the second opening, wherein the second opening is arranged in a region of the first opening; and The upper surface of the second electrode comprises a first depression arranged corresponding to the first opening and a second depression arranged corresponding to the second opening. [16] Light-emitting device according to claim 15, wherein the current barrier layer comprises a first region surrounded by the second opening and a second region surrounded by the second opening; and a top side of the second electrode arranged in the first region of the current barrier layer and comprising a projection extending from a bottom side of the second recess. [17] Light-emitting device according to claim 1, wherein the insulating layer is arranged on the mesa; the mesa comprises at least one notch formed on a side surface thereof such that the first conductive semiconductor layer is at least partially exposed by the notch; and the opening of the insulating layer at least partially exposes the first conductive semiconductor layer exposed by the notch. [18] Light-emitting device according to claim 17, wherein the first electrode pad and the first electrode extension are arranged on the mesa, and the extended contact section forms an ohmic contact with the first conductive semiconductor layer exposed by the notch. [19] Light-emitting device according to claim 1, wherein the insulating layer is arranged on the first conductive semiconductor layer; and the extended contact section comprises a first extended contact section and a second extended contact section, the first extended contact cut is arranged along a side surface of the mesa, The second extended contact section is positioned near a corner of the mesa to be adjacent to the first electrode pad. [20] Light-emitting device according to claim 1, wherein the substrate comprises a plurality of modified areas formed on at least one side surface thereof and has a band shape extending in a horizontal direction thereof, and a distance between a lowest modified area and a bottom surface of the substrate is smaller than a distance between a top modified area and a top surface of the substrate.