Nitride semiconductor light-emitting element

Abstract

The present invention provides a nitride semiconductor light-emitting element that can improve light emission output. [Solution] The nitride semiconductor light-emitting device comprises a substrate whose c-plane is the growth surface, a buffer layer formed on the growth surface, an n-type semiconductor layer containing Al, Ga, and N formed on the buffer layer, an active layer formed on the n-type semiconductor layer and having at least one well layer containing Al, Ga, and N, and a p-type semiconductor layer formed on the active layer. The nitride semiconductor light-emitting device emits ultraviolet light with a central wavelength of 365 nm or less. When the well layer closest to the p-type semiconductor layer among the at least one well layer is designated as the target well layer, the ratio of the carbon concentration Cw of the target well layer to the carbon concentration Cn of the n-type semiconductor layer, Cw / Cn, is 3.0 / 100 or less.

Claims

1. A substrate where the c-plane is the growth surface, A buffer layer formed on the growth surface, An n-type semiconductor layer containing Al, Ga, and N is formed on the buffer layer, An active layer formed on the n-type semiconductor layer, having at least one well layer containing Al, Ga, and N, The active layer comprises a p-type semiconductor layer formed on the active layer, It emits ultraviolet light with a central wavelength of 365 nm or less. When the well layer closest to the p-type semiconductor layer among the at least one well layer is designated as the target well layer, the ratio of the carbon concentration Cw of the target well layer to the carbon concentration Cn of the n-type semiconductor layer, Cw / Cn, is 3.0 / 100 or less. Nitride semiconductor light-emitting element.

2. The aforementioned ratio Cw / Cn further satisfies the condition 1.4 / 100 or less. The nitride semiconductor light-emitting device according to claim 1.

3. The carbon concentration Cw of the target well layer is 4.3 × 10⁻⁶. １６ [atoms / cm ３ The following is true: The nitride semiconductor light-emitting element according to claim 1 or 2.

4. The carbon concentration Cw of the target well layer is 3.0 × 10⁻⁶ １６ [atoms / cm ３ The following conditions must also be met: The nitride semiconductor light-emitting device according to claim 3.

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