Semiconductor device
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- ASTEMO LTD
- Filing Date
- 2017-01-23
- Publication Date
- 2026-07-02
AI Technical Summary
The second insulating layer in existing semiconductor devices is exposed, leading to unreliable insulation due to moisture absorption and thermal stress.
A semiconductor device with a conductor layer sandwiched between first and second insulating layers, forming capacitance circuits, and a protruding portion on the base member to enhance insulation, ensuring a longer distance from the conductor layer's center to its peripheral edge.
This configuration reliably secures insulating properties by reducing thermal stress and moisture absorption, extending the semiconductor device's service life.
Abstract
Description
Technical field
[0001] The present invention relates to a semiconductor device. Background area
[0002] Some semiconductor devices perform a power conversion function to convert DC power to AC power or AC power to DC power.
[0003] As such a semiconductor device, PTL 1 discloses an invention of a power conversion device comprising one or more semiconductor chips, one or more conductors connected to the semiconductor chips, a ceramic substrate on which the semiconductor chips and the conductors are mounted, a base plate on which the ceramic substrate is mounted, and a fan, wherein an insulating plate is embedded between the base plate and the fan, and the fan is connected to ground to improve the insulation strength.Furthermore, PTL 2 and PTL 3 disclose inventions comprising a conductor frame in which several semiconductor elements are bonded to one surface, a first insulating layer arranged on the other surface of the conductor frame, a metallic base plate having a surface to which the conductor frame is connected via the first insulating layer, and a second insulating layer arranged on the other surface of the metallic base plate to improve the insulation properties. List of prior art patent literature PTL 1: JP 2012-244750 A PTL 2: JP 2013-229534 A PTL 3: JP 2013-229535 A Summary of the invention Technical problem statement
[0004] In the semiconductor devices that are in PTL2 and PTL As described in section 3, the second insulating layer is exposed to the outside of the metallic base plate and therefore has the problem that its insulation is less reliable than that of the first insulating layer due to the absorption of moisture and thermal stress. Solution to the problem
[0005] A semiconductor device according to the present invention comprises a semiconductor element, a printed circuit board connected to the semiconductor element, a base element made of metal facing the printed circuit board and forming an outer surface of the semiconductor device, and an insulating element arranged between the printed circuit board and the base element, wherein the insulating element is formed such that it has a conductive layer embedded between a first insulating layer and a second insulating layer, forms a capacitance circuit between the first insulating layer and the printed circuit board, and forms a capacitance circuit between the second insulating layer and the base element, wherein the base element has a projecting section formed in a contact section between the insulating element and the base element, the projecting section projecting towards the insulating element.and a length from the center of the conductor layer to a circumferential edge section of the insulating element containing the conductor layer is formed such that it is longer than a length from the center of the conductor layer to a circumferential edge section of the protruding section of the base element. Advantageous effects of the invention
[0006] According to the present invention, a semiconductor device can be created that can reliably ensure the insulation properties. List of characters Fig. 1(A) and Fig. Figure 1(B) is a perspective exterior view and a perspective detail view of a semiconductor power module. Fig. 2(A) and Fig. Figure 2(B) is a perspective view of a single component illustrating a process of assembling internal wiring of the semiconductor power module, and a circuit diagram illustrating an internal circuit. Fig. 3(A), Fig. 3(B), Fig. 3(C) and Fig. Figure 3(D) is a cross-sectional view illustrating a process of assembling the semiconductor power module, and a cross-sectional view, an enlarged cross-sectional view and a bottom top view illustrating an internal structure. Fig. 4(A), Fig. 4(B), Fig. 4(C) and Fig. Figure 4(D) is a single-part cross-sectional view to describe a method of pressure bonding of an insulating element, a cross-sectional view to describe a method of forming an outer shape of the insulating element, a cross-sectional view illustrating a structure of the insulating element, and an enlarged cross-sectional view illustrating an exact structure of the insulating element. Fig. 5(A) and Fig. 5(B) are a diagram to describe a voltage division effect of the semiconductor power module and a circuit diagram to describe the voltage division effect. Fig. 6(A), Fig. 6(B) and Fig. Figure 6(C) illustrates a second embodiment and is a cross-sectional view, an enlarged cross-sectional view and a bottom top view of a semiconductor power module. Fig. 7(A), Fig. 7(B), Fig. 7(C) and Fig. Figure 7(D) illustrates a third embodiment and is a single-part cross-sectional view, a cross-sectional view, an enlarged cross-sectional view and a bottom top view of a semiconductor power module. Fig. 8(A), Fig. 8(B) and Fig. Figure 8(C) illustrates a fourth embodiment and is a single-part cross-sectional view, a cross-sectional view and a bottom top view of a semiconductor power module. Fig. Figure 9 is a cross-sectional view of a semiconductor power module, illustrating a fifth embodiment. Fig. Figure 10 is a cross-sectional view of a semiconductor power module, illustrating a sixth embodiment. Fig. 11(A) and Fig. Figure 11(B) is a cross-sectional view of a single component and a bottom top view of a semiconductor power module illustrating a seventh embodiment. Description of the embodiments (First embodiment)
[0007] The following describes an example in which a semiconductor device of the present invention is applied to a semiconductor power module. Fig. 1(A) is a perspective view showing the external appearance of a semiconductor power module. 300 illustrated. Fig. 1(B) is a perspective view of a single part, showing the assembly process of the semiconductor power module. 300 illustrated.
[0008] As in Fig. As illustrated in Figure 1(B), a sealing body 302 containing a semiconductor power element is enclosed on both sides by the insulating elements. 333 embedded. The insulation between the wiring connections leading out of the semiconductor power element is provided by a terminal compound. 317 ensured, and a connection type 316is formed. A state in which the semiconductor power module 300 Once assembled, it is in Fig. 1(A) illustrates the sealing body. 302 and the insulating elements 333 are in a recording 306 a case 304 absorbed and are sealed by a second sealing resin 349 Sealed and fastened. An O-ring groove. 312 is in an outer circumferential section of a recording opening of the recording 306 formed. An O-ring is attached to the O-ring groove. 312 attached, and the semiconductor power element is mounted to a water-resistant housing (not illustrated) while the O-ring is compressed. The ribs 305 are on both sides of the case 304 They are designed to dissipate the heat generated by the semiconductor power element. The fin 305It is formed, for example, from an element that exhibits electrical conductivity, such as a composite material of Cu, a Cu alloy, Cu-C or Cu-CuO, or a composite material of Al, an Al alloy, AlSiC or Al-C. An AC connection 320D of the power module, to be connected to an AC busbar, a reactance coil and the like, which form an inverter circuit (not illustrated), a positive DC connection 315D of the power module, to be connected to a capacitor and the like, which forms the inverter circuit, and a negative DC connection 319D of the power module are derived from the semiconductor power module 300 Furthermore, a signal connection is available. 327U of the upper branch and a signal connection port 327Lof the lower branch for controlling and protecting the semiconductor power element in the same direction as the positive DC terminal 315D of the power module and the negative DC terminal 319D of the power module from the semiconductor power module 300 before.
[0009] Fig. 2(A) is a perspective view of a single part, showing a process of assembling the internal wiring of the semiconductor power module. 300 illustrated, and is a circuit diagram illustrating an equivalent circuit that Fig. 2(A) corresponds to an IGBT. 328 and a diode 156 , which form an upper branch circuit that is the semiconductor power element, are connected by the metal bonding materials 331 bonded in such a way that they pass through the circuit boards 315 and 318 are embedded in the upper branch, as in Fig. 2(A) is illustrated. Likewise, an IGBT 330and a diode 166 , forming a lower branch circuit, which is the semiconductor power element, through the metal bonding materials 331 bonded in such a way that they pass through the circuit boards 319 and 320 the lower branch is embedded. The circuitry of the upper branch and the circuitry of the lower branch are connected at an intermediate connection section. 329 through the metal bonding materials 331 bonded in such a way that they form a series connection of the upper and lower branches.
[0010] As in Fig. As illustrated in 2(B), the circuit of the upper branch contains the IGBT. 328 and the diode 156 , and the positive DC terminal 315D the power module is connected to the circuit board 315 of the upper branch. Furthermore, the circuit of the lower branch contains the IGBT. 330 and the diode 166 , and the negative DC terminal 319Dthe power module is connected to the circuit board 319 connected to the lower branch. The circuit board 318 of the upper branch and the circuit board 320 of the lower branch are at the intermediate connecting section 329 connected. Furthermore, the circuit board 320 of the lower branch with the AC connection 320D connected to the power module. A gate electrode of the IGBT. 328 The circuit of the upper branch is connected to one of the signal connection terminals. 327U connected to the upper branch, and an emitter electrode of the IGBT 328 The circuit of the upper branch is connected to another of the signal connection terminals. 327U connected to the upper branch. A gate electrode of the IGBT. 330 The circuit of the lower branch is connected to one of the signal connection terminals. 327L connected to the lower branch, and an emitter electrode of the IGBT 330The circuit of the lower branch is connected to another of the signal connection terminals. 327L connected to the lower branch. The IGBT 328 and 330 , the diodes 156 and 166 and the circuit boards 315 , 318 , 319 and 320 are sealed with a sealing resin material to seal the sealing body 302 to form, which in Fig. 1(B) is illustrated.
[0011] As the sealing resin, which is used for the sealing body 302 For example, a resin based on novolac, a polyfunctional resin, or a biphenyl epoxy resin type can be used, and ceramics such as SiO2, Al2O3, AlN, or BN, a gel, rubber, and the like are included, and it is achieved that a coefficient of thermal expansion is approximately equal to that of the printed circuit boards. 315 , 318 , 319 and 320This results in a reduction of the difference in the coefficient of thermal expansion between the elements, thus decreasing the thermal stress caused by temperature increases in an application environment. Therefore, the lifetime of the semiconductor power module can be extended. 300 to be extended.
[0012] Fig. 3(A) is a cross-sectional view showing a process of assembling the semiconductor power module. 300 illustrated, and is a cross-sectional view that runs along line AA in Fig. 1(B) is recorded. Fig. 3(B) is a cross-sectional view showing an internal structure of the semiconductor power module. 300 illustrated, and is a cross-sectional view that runs along line BB in Fig. 1(A) is recorded. Fig. 3(C) is a cross-sectional view showing an accurate structure of the semiconductor power module. 300illustrated, and is an enlarged cross-sectional view of section C in Fig. 3(B). Fig. 3(D) is a top view of the semiconductor power module. 300 and is a bottom view from a direction D in Fig. 3(B) considered.
[0013] As in Fig. 3(A) illustrates the IGBTs 328 and 330 about metal bonding materials 331 with the circuit boards 315 , 318 , 319 and 320 bonded to the sealing body 302 to form the insulating elements 333 are located on the outside of the sealing body 302 provided. The insulating element 333 contains a conductive layer 334 , which are between a first insulating layer 335a and a second insulating layer 335b is stacked. The conductor layer 334 , which are on the lower side in Fig. 3(A) is illustrated, is divided by a slot section 339 so that it forms a gap between the printed circuit board 315 and the circuit board 320 corresponds. Likewise, the conductor layer 334 , which are on the top side in Fig. 3(A) is illustrated, divided by a slot section 339 so that it forms a gap between the printed circuit board 318 and the circuit board 319 corresponds.
[0014] As in Fig. 3(B) is illustrated, the sealing body 302 about the insulating elements 333 between the basic elements 307 of the case 304 sealed to secure the semiconductor power module 300 to form the case 304 , which is the basic element 307 It contains, forms an outer surface of the semiconductor power module 300 and is made of metal. In this way, the conductor layers are 334 the insulating elements 333each of the circuit boards 315 , 318 , 319 and 320 facing. Furthermore, there is a remaining space within the housing. 304 with a second sealing resin 349 filled to prevent moisture absorption and thermal stress on the insulating elements 333 to suppress.
[0015] The sealing resin used for the second sealing resin 349 can be, for example, a resin based on novolac, a polyfunctional resin, or a biphenyl epoxy resin type, and ceramics such as SiO2, Al2O3, AlN, or BN, a gel, rubber, and the like are included, and it is caused that a coefficient of thermal expansion is approximately equal to that of the housing. 304This results in a reduction of the difference in the coefficient of thermal expansion between the elements, thus decreasing the thermal stress caused by temperature increases in an application environment. Therefore, the lifetime of the semiconductor power module can be extended. 300 to be extended. As the metal bonding material 331 For example, a soft brazing material (soldering agent) based on a Sn alloy, a hard brazing material such as an AI alloy or a Cu alloy, or a metallic sintered material using metallic nanoparticles or microparticles is used.
[0016] Fig. 3(C) is an enlarged cross-sectional view of section C in Fig. 3(B). In the basic element 307 is in a contact section between the insulating element 333 and the basic element 307 a table-shaped, projecting section 307aformed, which points in the direction of the insulating element 333 protrudes. Furthermore, a length L2 from a center P of the conductor layer 334 up to a circumferential edge section of the insulating element 333 formed in such a way that they are longer than a length L1 from the center P of the conductor layer 334 up to a circumferential edge section of the preceding section 307a of the basic element 307 is. In other words, a basic end surface. 308 of the perimeter edge section of the preceding section 307a is in relation to an insulating element end surface 336 of the circumferential edge section of the insulating element 333 arranged on an inner side. Furthermore, the insulating element end surface forms 336 of the insulating element 333 and a conductor layer end surface 344 the conductor layer 334 An end face at the same position. Since the base end face 308of the perimeter edge section of the preceding section 307a in this way with respect to the insulating element end surface 336 of the circumferential edge section of the insulating element 333 If arranged on an inner side, there is an insulation gap between the conductor layer. 334 and the basic element 307 ensured. The positional relationship between the base and end surfaces 308 , the insulating element end surface 336 , the conductor layer end surface 344 and the printed circuit boards 315 , 318 , 319 and 320 is in Fig. 3D illustrated. As in Fig. 3(D) is illustrated, the base end surface 308 on the inside of the insulating element end surface 336 arranged, and the circuit boards 315 , 318 , 319 and 320 are arranged on the inside of the conductor layer end face 344.
[0017] Fig. 4(A) is a single-part cross-sectional view to describe a process of pressure bonding the insulating element. 333 As in Fig. As illustrated in 4(A), the insulating element 333 shaped by the conductor layer 334 between the first insulating layer 335a and the second insulating layer 335b The layers are stacked and formed by an insulating material, and a thermocompression bond is performed on the stacked layers in a vacuum condition.
[0018] After the insulating element 33 Once formed by thermocompression bonding, both ends are cut off using a die M or similar, as shown in Fig. 4(B) is illustrated. It should be mentioned that the conductor layer 334 through the slot section 339 is divided. The shapes and dimensions of the insulating element are then described. 333 shaped and finished as in Fig. Figure 4(C) illustrates a detailed, enlarged view of a circumferential section E of the insulating element end face. 336 of the insulating element 333 is in Fig. 4(D) illustrated. As in Fig. As illustrated in 4(D), the insulating element end surface 336 a crack may occur due to cutting with the die M or similar. 340 and a ridge 341 exhibit this. In this case, a short circuit occurs when the conductor layer 334 with the basic element 307 comes into contact, and the insulation performance is reduced. However, in the present embodiment, the conductor layer end surface 344 the conductor layer 334 on the same plane as the insulating element end surface 336 arranged as in Fig. 3(C) is illustrated. Furthermore, the base and end surface are shown. 308 of the perimeter edge section of the preceding section 307awith respect to the insulating element end surface 336 of the circumferential edge section of the insulating element 333 located on the inside. Therefore, the insulation distance between the conductor layer can be increased. 334 and the basic element 307 This can be ensured, and the insulation performance can be improved.
[0019] Fig. 5(A) is an enlarged cross-sectional view to describe a voltage division effect of the semiconductor power module. 300 . Fig. Figure 5(B) is a circuit diagram to describe the voltage division effect of the semiconductor power module. 300 . At the time of operation of the semiconductor power module 300 At the time of a switching operation, a surge voltage is applied to the DC voltage of an inverter system, and a maximum voltage at the operating time almost reaches the withstanding voltage of the semiconductor power element. At this point, a voltage is transferred between the insulating element.333 and the case 304 A value close to this voltage value is applied. At this point, the applied voltage is passed through the conductor layer. 334 divided, and a voltage applied to the first insulating layer 335a and the second insulating layer 335b The amount of insulation applied can be reduced. For example, this is the case when the thickness and dielectric constant of the first insulating layer are 335a and the second insulating layer 335b on both surface sides of the conductor layer 334 are the same, the capacities 338 the first insulating layer 335a and the second insulating layer 335b each other, and the voltage applied to the first insulating layer 335a and the second insulating layer 335b The voltage to be applied can be reduced to half the voltage applied to the insulating element. 333to be created. One result can then be, if inside the first insulating layer 335a and the second insulating layer 335b a cavity 337 The tension present in the cavity 337 The applied voltage will also be reduced. Therefore, a discharge voltage of the cavity will be achieved. 337 improved, and a discharge trigger voltage of the insulating element 333 can be improved. If this state is illustrated by an equivalent circuit, the equivalent circuit will be a circuit formed by the capacitances 338 in an equivalent manner between each of the circuit boards 315 , 318 , 319 and 320 and be connected to a ground potential when the housing 304 lies on the mass potential, as in Fig. 5(B) is illustrated. (Second embodiment)
[0020] Fig. 6(A), Fig. 6(B) and Fig. Figure 6(C) shows diagrams illustrating a second embodiment. Fig. 6(A) is a cross-sectional view of the semiconductor power module 300 , Fig. 6(B) is an enlarged cross-sectional view of section F in Fig. 6(A), and Fig. 6(C) is a bottom top view of Fig. 6(A) viewed from direction D.
[0021] In the present embodiment, in an end face of a basic element 307 a more in-depth basic section 309 as provided for, as in Fig. 6(B) illustrates this point. This differs from the first embodiment, which is illustrated in Fig. Figure 3(B) illustrates this, and the other components have similar configurations. The provided, recessed base section 309 forms an end surface. 309a of the deepened basic section of the basic element 307 with regard to an insulating element end surface 336arranged on an inner side, as in Fig. 6(B) is illustrated. In other words, by the in-depth basic section 309 as provided for, will be in the basic element 307 in a contact section between the insulating element 333 and the basic element 307 a table-shaped, projecting section 307a formed, which points towards an insulating element 333 presides over.
[0022] Fig. 6(C) illustrates the positional relationship between the end surface 309a of the recessed base section, the insulating element end surface 336 and the circuit boards 315 , 318 , 319 and 320 A length L3 from a center P of a conductor layer 334 up to a circumferential edge section of the insulating element 333 is formed in such a way that it is longer than a length L4 from the center P of the conductor layer 334 to the end surface 309aof the deepened basic section of the basic element 307 is, that is, the length L3 is formed in such a way that it is longer than the length L4 from the center P of the conductor layer 334 up to a circumferential edge section of the preceding section 307a is. In other words, the insulating element end surface 336 and an end surface 344 The conductor layer is positioned larger towards an outer side than the end surface. 309a of the recessed base section, ensuring an insulation distance and improving insulation performance. Furthermore, the printed circuit boards 315 , 318 , 319 and 320 on an inner side of the insulating element end surface 336 arranged. (Third embodiment)
[0023] Fig. 7(A), Fig. 7(B), Fig. 7(C) and Fig. 7(D) are diagrams illustrating a third embodiment. Fig. 7(A) is a single-part cross-sectional view of a semiconductor power module 300 , Fig. 7(B) is a cross-sectional view of the semiconductor power module 300 , Fig. 7(C) is an enlarged cross-sectional view of section G in Fig. 7(B), and Fig. 7(D) is a bottom top view of Fig. 7(B) viewed from direction D.
[0024] As in Fig. 7(A) and Fig. 7(B) is illustrated, is an insulating element 333 in the same number of insulating elements as the number of circuit boards 315 , 318 , 319 and 320 subdivided, and the several subdivided insulating elements 333 are each arranged by connecting the multiple circuit boards 315 , 318 , 319 and 320 are facing each other. Furthermore, the basic element 307a recessed section 310, which corresponds to a gap position where the several subdivided insulating elements 333 adjacent to each other, facing each other. The other configurations are similar to those in the second embodiment. As in Fig. Figure 7(C) illustrates a conductor layer end surface. 344 and an insulating element end surface 336 on the same plane, and an end surface 310a of the in-depth section of the in-depth section 310 is in relation to the insulating element end surface 336 of the insulating element 333 arranged on an inner side. With the recessed section 310 are in the basic element 307 in a contact section between the insulating element 333 and the basic element 307 two table-shaped, projecting sections 307a formed, which point towards the insulating element 333 preside.
[0025] As in Fig. 7(D) illustrates a length L6 from a center P of a conductor layer 334 up to a circumferential edge section of the insulating element 333 formed in such a way that they are longer than a length L5 from the center P of the conductor layer 334 up to a circumferential edge section of the preceding section 307a of the basic element 307 According to the present embodiment, an insulation distance can be ensured, and insulation performance can be improved, and a slot section 339 , who in Fig. 4(B) is illustrated by the subdivision of the insulating element. 333 unnecessary, and a manufacturing process can be simplified. (Fourth embodiment)
[0026] Fig. 8(A), Fig. 8(B) and Fig. Figure 8(C) shows diagrams illustrating a fourth embodiment. Fig. 8(A) is a single-part cross-sectional view of a semiconductor power module 300 , Fig. 8(B) is a cross-sectional view of the semiconductor power module 300 , and Fig. 8(C) is a bottom top view of Fig. 8(B) viewed from direction D.
[0027] In the present embodiment, a slot section 339 , who in Fig. 3(A) is illustrated in a conductor layer 334 an insulating element 333 not provided for, as in Fig. 8(A) illustrates this point. This differs from the first embodiment, which is illustrated in Fig. Figure 3(A) illustrates this, however the other components have similar configurations. It should be noted that Fig. 8(B) illustrates a case where the shape of a basic element 307 is similar to that of the first embodiment. However, the shape of the basic element can be 307exhibit a similar configuration to that of the second embodiment. In the basic element 307 is in a contact section between the insulating element 333 and the basic element 307 a table-shaped, projecting section 307a formed, which points in the direction of the insulating element 333 presides over. Fig. 8(C) illustrates a positional relationship between an end surface 308 of the preceding section 307a , an insulating element end surface 336 and the circuit boards 315 , 318 , 319 and 320 A length L8 from a center P of the conductor layer 334 up to the insulating element end surface 336 , which is a circumferential edge section of the insulating element 333 is formed in such a way that it is longer than a length L7 from the center P of the conductor layer 334 up to the end surface 308 of the preceding section 307ais a circumferential edge section of the preceding section 307a of the basic element 307 is. According to the present embodiment, in the conductor layer 334 of the insulating element 333 no slot section 339 This is provided for, and thus the manufacturing process can be simplified. (Fifth embodiment)
[0028] Fig. Figure 9 is a cross-sectional view of a semiconductor power module. 300 , which illustrates a fifth embodiment. As in Fig. 9(A) is illustrated as a slot section 339 , who in Fig. 3(A) is illustrated in a conductor layer 334 an insulating element 333 not provided for. Furthermore, two conductor layers are required. 334 of the insulating element 333stacked, with an insulating layer embedded between them. The other components have similar configurations to those in the first embodiment. It should be noted that the shape of a basic element 307 the form in Fig. 3(B) may be the one described in the first embodiment, or the form in Fig. 6(A) can be the one described in the second embodiment. According to the present embodiment, the insulation performance is further improved, and a manufacturing process can be simplified because the conductor layers 334 are stacked in two layers. (Sixth embodiment)
[0029] Fig. Figure 10 is a cross-sectional view of a single component, illustrating a sixth embodiment. As shown in Fig. As illustrated in section 10, the printed circuit boards are divided into sections. 318 and 320 are facing which have an alternating current potential, conductor layers334 the insulating elements 333 provided and are in sections that correspond to the printed circuit boards 319 and 315 are not provided for in a basic element. 307 is in a contact section between the insulating element 333 and the basic element 307 a table-shaped, projecting section 307a formed, which points in the direction of the insulating element 333 The following is mentioned. It should be noted that the shape of the basic element 307 the form that can be in Fig. Figure 6(A) illustrates the second embodiment. A relationship between the insulating element 333 , which the circuit boards 318 and 320 is turned towards those that have the alternating current potential, and the basic element 307 is as follows. That is, a length from the center of the conductor layer. 334 up to a circumferential edge section of the insulating element 333is formed in such a way that it is longer than a length from the center of the conductor layer 334 up to a circumferential edge section of the preceding section 307a of the basic element 307 The other components have similar configurations to those in the first embodiment. According to the present embodiment, the insulation performance is improved, and a manufacturing process can be simplified because the conductor layer 334 is intended for a location where a standing voltage is required. (Seventh embodiment)
[0030] Fig. 11(A) and Fig. Figure 11(B) illustrates a semiconductor power module 300 , which illustrates a structure of a seventh embodiment, and Fig. 11(A) is a single-part cross-sectional view, and Fig. Figure 11(B) is a bottom view. As in Fig. As illustrated in 11(A), the insulating elements are 333subdivided and each the circuit boards 315 , 318 , 319 and 320 arranged facing each other. Furthermore, the conductor layers are 334 the insulating elements 333 in sections provided that the printed circuit boards 318 and 320 are facing which have an alternating current potential, and are in sections that are connected to the circuit boards 319 and 315 are not provided for. The basic element 307 is in a central section of a basic element 307 with an in-depth section 310 provided in the basic element 307 is in a contact section between the insulating element 333 and the basic element 307 a table-shaped, projecting section 307a formed, which points in the direction of the insulating element 333 The following is mentioned. It should be noted that the shape of the basic element 307 the form that can be in Fig. Figure 6(A) illustrates the second embodiment. A relationship between the insulating elements 333 , which are the circuit boards 318 and 320 are facing which have the alternating current potential, and the basic element 307 is in Fig. 11(B) illustrates this. That is, a length L10 from a center P of a conductor layer 334 up to a circumferential edge section of the insulating element 333 is formed in such a way that it is longer than a length L9 from the center of the conductor layer 334 up to a circumferential edge section of the preceding section 307a of the basic element 307 According to the present embodiment, the insulation performance is improved, and a manufacturing process can be simplified because the conductor layer 334 is intended for a location where a standing voltage is required.
[0031] According to the embodiments described above, the following functions and effects can be obtained. (1) The semiconductor power module 300 contains the semiconductor elements (the IGBT) 328 and the diode 156 ), the circuit boards 315 , 318 , 319 and 320 , which are connected to the semiconductor elements, the basic element made of metal 307 , which the circuit boards 315 , 318 , 319 and 320 is facing the outside of the semiconductor power module 300 forms, and the insulating element 333 , that between the circuit boards 315 , 318 , 319 and 320 and the basic element 307 is arranged, wherein the insulating element 333 is formed in such a way that it forms the conductor layer 334 exhibits the space between the first insulating layer 335a and the second insulating layer 335bembedded is the capacitance circuit between the first insulating layer 335a and the circuit boards 315 , 318 , 319 and 320 is formed, the capacitance circuit between the second insulating layer 335b and the basic element 307 is formed, whereby the basic element 307 in the contact section between the insulating element 333 and the basic element 307 the table-shaped, projecting section 307a exhibits, which points towards the insulating element 333 protrudes, and the length from the center of the conductor layer 334 up to the circumferential edge section of the insulating element 333 , that the conductor layer 334 contains, is formed in such a way that it is longer than the middle of the conductor layer 334 up to the circumferential edge section of the preceding section 307a of the basic element 307 This allows the semiconductor power module to function. 300a system must be created that can reliably ensure the insulation properties.
[0032] The present invention is not limited to the embodiments described above and may include a configuration consisting of a combination of these embodiments. Furthermore, other forms considered within the technical concept of the present invention are also included in the scope of the present invention, unless they impair the properties of the present invention. Reference symbol list 300 Semiconductor power module 304 Cases 305 rib 307 Basic element 307a preceding section 315, 318, 319, 320: Printed circuit board 333 Insulating element 334 conductor layer 335a first insulating layer 335b second insulating layer QUOTES INCLUDED IN THE DESCRIPTION
[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature
[0000] JP 2012244750 A
[0003] JP 2013229534 A
[0003] JP 2013229535 A
[0003]
Claims
[1] Semiconductor device comprising the following: a semiconductor element; a circuit board connected to the semiconductor element; a base element made of metal, which faces the circuit board and forms an outer surface of the semiconductor device; and an insulating element arranged between the circuit board and the base element, wherein the insulating element is formed in such a way that it has a conductor layer embedded between a first insulating layer and a second insulating layer, forms a capacitance circuit between the first insulating layer and the circuit board, and forms a capacitance circuit between the second insulating layer and the base element. the base element has a projecting section formed in a contact section between the insulating element and the base element, the projecting section projecting towards the insulating element, and a length from the center of the conductor layer to a circumferential edge section of the insulating element containing the conductor layer is formed such that it is longer than a length from the center of the conductor layer to a circumferential edge section of the protruding section of the base element. [2] Semiconductor device according to claim 1, wherein several printed circuit boards are provided corresponding to several semiconductor elements, and several conductor layers are provided facing the several printed circuit boards. [3] Semiconductor device according to claim 1 or 2, wherein a recessed section is provided in the circumferential edge section of the preceding section in the base element and the length from a center of the conductor layer to the circumferential edge section of the insulating element containing the conductor layer is formed such that it is longer than a length from the center of the conductor layer to the recessed section of the base element. [4] Semiconductor device according to claim 2, wherein the insulating element is divided into the same number of insulating elements as the number of multiple printed circuit boards, and several of the divided insulating elements are arranged facing the multiple printed circuit boards, and A recessed section is formed in the basic element, which faces a split position where the several subdivided insulating elements border each other. [5] Semiconductor device according to claim 2, wherein the insulating element is divided into the same number of insulating elements as the number of the multiple printed circuit boards, and the multiple divided insulating elements are arranged facing the printed circuit boards of the multiple printed circuit boards that have an alternating current potential, and a length up to the circumferential edge section of the insulating element which is arranged facing the circuit board which has the alternating current potential, is formed such that it is longer than the length up to the circumferential edge section of the protruding section of the base element.