DETECTION DEVICES

Abstract

Detection device (1) comprising the following: a sensor base (21); several photoelectric conversion elements (PD) provided and configured in a detection area (AA) of the sensor base (21) to receive incident light and to output signals corresponding to the received light; several switching elements (Tr, TrR, TrS) that are provided in the respective photoelectric conversion elements (PD); several gate lines (GCL) that are coupled to the switching elements and run in the line direction (Dx); a first light source (61) configured to emit first light having a first maximum emission wavelength; and a second light source (62) configured to emit second light having a second maximum emission wavelength, wherein the sensor base (21) has a first surface (S1) which is provided with the photoelectric conversion elements (PD) and a second surface (S2) on a side opposite the first surface (S1), the first light source (61) is positioned such that it faces the first surface (S1) in a direction perpendicular to the first surface (S1), and the second light source (62) is provided such that it is directed towards the second surface (S2) in a direction perpendicular to the second surface (S2).

Description

Area

[0001] The present invention relates to a detection device. background

[0002] Patent document 1 describes an optical sensor in which several photoelectric conversion elements, such as photodiodes, are arranged on a semiconductor substrate. In the optical sensor, signals emitted by the photoelectric conversion elements change with the amount of irradiated light, thus enabling the detection of biological data. The optical sensor of patent document 1 can detect irregularities on the surface of a finger at a fine distance and is used as a fingerprint sensor. Patent document 2 describes a display device equipped with several sensors for detecting infrared radiation. The display device of patent document 2 can detect the position of a finger, a fingerprint pattern, and a vein pattern based on the reflected light of the infrared radiation.

[0003] US 2010 / 0245556A1 discloses an image acquisition device comprising a substrate in which multiple pixel circuits are formed, and a control unit that generates an image signal in which a target has been acquired by controlling the multiple pixel circuits. If the area in which the multiple pixel circuits are formed is considered the acquisition area, the acquisition area includes a fingerprint acquisition area for acquiring a fingerprint and a vein acquisition area for acquiring veins.

[0004] WO 2017 / 187718 A1 discloses an imaging device comprising a first light guide plate having a mounting surface, the mounting surface including a mounting area on which a part of a living body is placed; a second light guide plate provided on the mounting surface except for the mounting area; at least one first light source provided at an edge of the first light guide plate and illuminating the inside of the first light guide plate with a first irradiation light of a prescribed wavelength; at least one second light source provided at an edge of the second light guide plate and irradiating the inside of the second light guide plate with a second irradiation light of a prescribed wavelength;and an imaging unit arranged on a surface side of the first light guide plate opposite the second light guide plate, capturing an image of light from the surface of the part of the living body.

[0005] US Patent 2013 / 0075756A1 discloses a semiconductor device comprising a silicon carbide semiconductor substrate with a first and second surface. A gate electrode is located on the first surface, and a drain electrode on the second. A dielectric layer is arranged over the gate electrode, surrounded by a compensation layer that serves to mitigate negative bias temperature instability and limit the change in the threshold voltage to below approximately 1 volt. A source electrode is arranged over the compensation layer and electrically connected to a contact area of ​​the substrate. List of prior art patent literature [Patent Literature 1] US Patent Disclosure US 2018 / 0012069A1 [Patent Literature 2] Japanese Patent Publication JP 2009 - 32 005 A Summary Technical Problem

[0006] The optical sensor must detect not only a fingerprint-like pattern on a recognition target, such as a finger or palm, but also various types of biological data on the recognition target. Using the techniques described in Patent Literature 1 and Patent Literature 2, it can be difficult to detect several different types of biological data using the same sensor.

[0007] One object of the present invention is to create a detection device that can detect different types of biological data using the same sensor. Solution to the problem

[0008] The aforementioned problem is solved by the invention according to the independent claims. Further preferred embodiments are described in the dependent claims. Brief description of the drawings Fig. Figure 1 is a top view illustrating a detection device according to a first embodiment. Fig. Figure 2 is a block diagram illustrating a configuration example of the detection device according to the first embodiment. Fig. Figure 3 is a circuit diagram illustrating the detection device. Fig. Figure 4 is a circuit diagram illustrating several detection sub-areas. Fig. Figure 5 is a sectional view illustrating a schematic section configuration of a sensor. Fig. Figure 6 is a graph that schematically illustrates a relationship between a wavelength and a conversion efficiency of light incident on a photodiode. Fig. Figure 7 is a time waveform diagram illustrating an operating example of the detection device. Fig. Figure 8 is a time waveform diagram that illustrates the operational example during a reading period in Fig. 7 illustrates. Fig. Figure 9 is a top view that schematically illustrates a relationship between the sensor, first light sources and second light sources in the detection device according to the first embodiment. Fig. Figure 10 is a side view that schematically illustrates the relationship between the sensor, the first light sources and the second light sources of the detection device according to the first embodiment. Fig. Figure 11 is an explanatory diagram to illustrate a relationship between controlling the sensor and the illumination processes of the light sources in the detection device. Fig. Figure 12 is an explanatory diagram to illustrate a relationship between the control of the sensor and the illumination processes of the light sources according to a first amendment of the first embodiment. Fig. Figure 13 is an explanatory diagram to illustrate a relationship between the control of the sensor and the illumination processes of the light sources according to a second amendment of the first embodiment. Fig. Figure 14 is a top view that schematically illustrates a relationship between the sensor, the first light sources and the second light sources of the detection device according to a second embodiment. Fig. Figure 15 is a side view that schematically illustrates the relationship between the sensor, the first light sources and the second light sources of the detection device according to the second embodiment. Fig. Figure 16 is an explanatory diagram to illustrate a relationship between the control of the sensor and the illumination processes of the light sources in the detection device according to the second embodiment. Fig. Figure 17 is a side view that schematically illustrates a relationship between the sensor, the first light sources and the second light sources of the detection device according to a third embodiment. Fig. Figure 18 is a top view that schematically illustrates a relationship between the sensor, the first light sources and the second light sources of the detection device according to a fourth embodiment. Fig. Figure 19 presents side views that schematically illustrate a relationship between the sensor, first light sources and second light sources of the detection device according to a fifth embodiment. Fig. Figure 20 is a side view that schematically illustrates a relationship between the sensor, the first light sources and the second light sources of the detection device according to a third amendment of the fifth embodiment. Fig. Figure 21 is a top view that schematically illustrates a relationship between the sensor, a first light source and a second light source of the detection device according to a sixth embodiment. Fig. Figure 22 is a side view that schematically illustrates the relationship between the sensor, the first light source and the second light source of the detection device according to the sixth embodiment. Fig. Figure 23 is a time waveform diagram illustrating an operating example of the detection device according to a seventh embodiment. Fig. Figure 24 is a circuit diagram illustrating the detection sub-areas of the detection device according to an eighth embodiment. Fig. Figure 25 is a time waveform diagram illustrating an operating example of the detection device according to the eighth embodiment. Fig. Figure 26 is a graph illustrating an example of an emission spectrum of a first light and a second light. Fig. Figure 27 is a graph illustrating another example of the emission spectrum of the first light and the second light. Fig. Figure 28 is a graph illustrating examples of the transmission characteristics of a second filter. Description of the embodiments

[0009] The following describes embodiments of the present invention with reference to the drawings. The present invention is not limited to the description of the embodiments given below. The components described below include those that can be easily designed by those skilled in the art or those that are essentially identical to them. Furthermore, the components described below can be suitably combined. The disclosure is merely an example, and the present invention naturally includes suitable modifications that can be easily designed by those skilled in the art while maintaining the main content of the invention. To further clarify the description, the drawings in some cases schematically illustrate, for example, the widths, thicknesses, and shapes of various sections in comparison to their actual aspects.However, these are merely examples, and the interpretation of the present invention is not limited to them. The same element as one illustrated in a drawing already discussed will, where appropriate, be designated by the same reference numeral across the description and drawings, and its precise description will not be repeated in some cases. (First embodiment)

[0010] Fig. Figure 1 is a top view illustrating a detection device according to a first embodiment. As shown in Fig. As illustrated in Figure 1, a detection device 1 includes a sensor base 21, a sensor 10, a gate line drive circuit 15, a signal line selector circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source base 51, a second light source base 52, first light sources 61 and second light sources 62.

[0011] A control board 121 is electrically coupled to the sensor base 21 via a flexible printed circuit board 71. The flexible printed circuit board 71 is equipped with the detection circuit 48. The control board 121 is equipped with the control circuit 122 and the power supply circuit 123. The control circuit 122 is, for example, a field-programmable gate array (FPGA). The control circuit 122 provides control signals to the sensor 10, the gate line drive circuit 15, and the signal line selector circuit 16 to control the detection operation of the sensor 10. The control circuit 122 provides control signals to the first light sources 61 and the second light sources 62 to control the switching on or off of the first light sources 61 and the second light sources 62. The power supply circuit 123 provides voltage signals that... B. a sensor power supply signal VDDSNS (see Fig. 4) included, to the sensor 10, the gate line drive circuit 15 and the signal line selector circuit 16. The power supply circuit 123 also provides a power supply voltage to the first light sources 61 and the second light sources 62.

[0012] The sensor base 21 has a detection area AA and a circumferential area GA. The detection area AA is an area equipped with several photodiodes PD (see Fig. 4), which are contained in the sensor 10. The circumferential area GA is an area between the outer circumference of the detection area AA and the ends of the sensor base 21 and is an area that does not overlap with the photodiodes PD.

[0013] The gate line control circuit 15 and the signal line selection circuit 16 are provided in the circumferential area GA. Specifically, the gate line control circuit 15 is provided in a region of the circumferential area GA that extends in a second direction Dy, and the signal line selection circuit 16 is provided in a region of the circumferential area GA that extends in a first direction Dx and is located between the sensor 10 and the detection circuit 48.

[0014] The first direction Dx is a direction in a plane parallel to the sensor base 21. The second direction Dy is a direction in a plane parallel to the sensor base 21 and is perpendicular to the first direction Dx. The second direction Dy can intersect the first direction Dx without being perpendicular to it. A third direction Dz is a direction perpendicular to both the first direction Dx and the second direction Dy and is the normal direction to the sensor base 21.

[0015] The first light sources 61 are provided on the first light source base 51 and are arranged in the second direction Dy. The second light sources 62 are provided on the second light source base 52 and are also arranged in the second direction Dy. The first light source base 51 and the second light source base 52 are electrically coupled to the control circuit 122 and the power supply circuit 123 via connections 124 and 125, respectively, which are provided on the control board 121.

[0016] For example, inorganic light-emitting diodes (LEDs) or organic electroluminescent diodes (EL diodes) (organic light-emitting diodes (OLEDs)) are used as the first light sources 61 and the second light sources 62. The first light sources 61 and the second light sources 62 emit first light L61 and second light L62, respectively (see Fig. 9), which have different wavelengths. That is, the first light L61 has a first maximum emission wavelength MW1, and the second light L62 has a second maximum emission wavelength that differs from the first maximum emission wavelength MW1. The term "maximum emission wavelength" refers to a wavelength that exhibits the maximum emission intensity in an emission spectrum, which represents a relationship between the wavelength and emission intensity of the first light L61 and the second light L62, respectively.

[0017] Fig. Figure 26 is a graph illustrating an example of the emission spectrum of the first light and the second light. In Graph 1, which is shown in Fig. As illustrated in Figure 26, the horizontal axis represents the wavelength and the vertical axis represents the emission intensity. For example, as shown in Figure 26, the horizontal axis represents the wavelength and the vertical axis represents the emission intensity. Fig. Figure 26 illustrates that the first light, L61, has a first maximum emission wavelength MW1 in the range of 520 nm to 600 nm, e.g., at about 560 nm, and the second light, L62, has a second maximum emission wavelength MW2 in the range of 600 nm to 700 nm, e.g., at about 660 nm. That is, the second maximum emission wavelength MW2 of the second light, L62, is greater than the first maximum emission wavelength MW1 of the first light, L61. In this case, both the first light, L61, and the second light, L62, are visible light. The first light, L61, is blue or green light, and the second light, L62, is red light.

[0018] The first light L61, emitted by the first light sources 61, is reflected off the surface of a detection target, e.g., a finger Fg, and enters the sensor 10. Thus, the sensor 10 can detect a fingerprint by detecting a type of surface irregularity, e.g., of the finger Fg. The second light L62, emitted by the second light sources 62, is reflected or transmitted, e.g., by the finger Fg and enters the sensor 10. Thus, the sensor 10 can detect biological data, e.g., in the finger Fg. The biological data could be, for example, a pulse in the finger Fg or in the palm of the hand.

[0019] The wavelength of both the first light L61 and the second light L62 is not limited to the example described above and can be changed as appropriate. Fig. Figure 27 is a graph illustrating another example of the emission spectrum of the first light and the second light. For example, as shown in Figure 2 of Fig. Figure 27 illustrates that the first light L61 has the first maximum emission wavelength MW1 in the range of 520 nm to 600 nm, e.g., at approximately 560 nm, and the second light L62 can have the second maximum emission wavelength MW2 in the range of 780 nm to 900 nm, e.g., at approximately 850 nm. In this case, the first light L61 is blue or green visible light, and the second light L62 is infrared light. The sensor 10 can detect the fingerprint based on the first light L61 emitted by the first light sources 61. The second light L62 emitted by the second light sources 62 is reflected in the recognition target object, such as the finger Fg, or is transmitted through the finger Fg and enters the sensor 10. Thus, the sensor 10 can generate a blood vessel image (a vein pattern) as the biological data. B. detect in the finger Fg.

[0020] Alternatively, the first light L61 can have the first maximum emission wavelength MW1 in the range of 600 nm to 700 nm, e.g., at approximately 660 nm, and the second light L62 can have the second maximum emission wavelength MW2 in the range of 780 nm to 900 nm, e.g., at approximately 850 nm. In this case, the sensor 10 can detect blood oxygen concentration in addition to the pulse rate and blood vessel pattern as biological data based on the first light L61 emitted by the first light sources 61 and the second light L62 emitted by the second light sources 62. In this way, since the detection device 1 contains the first light sources 61 and the second light sources 62, the detection device 1 can detect the different types of biological data by performing detection based on the first light L61 and detection based on the second light L62.

[0021] The arrangement of the first light sources 61 and the second light sources 62, which are in Fig. The illustration in Figure 1 is merely an example and can be modified as applicable. For instance, the first light sources 61 and the second light sources 62 can be arranged on each of the first light source base 51 and the second light source base 52. In this case, a group containing the first light sources 61 and a group containing the second light sources 62 can be arranged in the second direction Dy, or the first light source 61 and the second light source 62 can be arranged alternately in the second direction Dy. The number of light source bases equipped with the first light sources 61 and the second light sources 62 can be one, three, or more.

[0022] Fig. Figure 2 is a block diagram illustrating a configuration example of the detection device according to the first embodiment. As shown in Fig. As illustrated in Figure 2, the detection device 1 further comprises a detection control unit 11 and a detection device 40. The control circuit 122 incorporates some or all functions of the detection control unit 11. The control circuit 122 also incorporates some or all functions of the detection device 40, with the exception of those of the detection circuit 48.

[0023] Sensor 10 is an optical sensor containing photodiodes PD, which serve as photoelectric conversion elements. Each photodiode PD in sensor 10 outputs an electrical signal corresponding to the light emitted onto it, as a detection signal Vdet to the signal line selection circuit 16. Sensor 10 performs the detection in response to a gate drive signal Vgcl supplied by the gate line drive circuit 15.

[0024] The detection control unit 11 is a circuit that provides respective control signals to the gate-line drive circuit 15, the signal line selector circuit 16, and the detection device 40 to control their operation. The detection control unit 11 provides various control signals, including, for example, a start signal STV, a clock signal CK, and a reset signal RST1, to the gate-line drive circuit 15. The detection control unit 11 also provides various control signals, including, for example, a selection signal ASW, to the signal line selector circuit 16. Furthermore, the detection control unit 11 provides various control signals to the first light sources 61 and the second light sources 62 to control their switching on and off.

[0025] The gate line drive circuit 15 is a circuit that drives several gate lines GCL (see Fig. 3) is controlled based on the various control signals. The gate line drive circuit 15 selects the gate lines GCL sequentially or simultaneously and supplies the gate drive signals Vgcl to the selected gate lines GCL. Through this process, the gate line drive circuit 15 selects the photodiodes PD that are coupled to the gate lines GCL.

[0026] The signal line selection circuit 16 is a switching circuit that selects several signal lines SGL sequentially or simultaneously (see Fig. 3) The signal line selection circuit 16 is, for example, a multiplexer. The signal line selection circuit 16 couples the selected signal lines SGL to the detection circuit 48 based on the selection signal ASW, which is supplied by the detection control unit 11. Through this process, the signal line selection circuit 16 outputs the detection signal Vdet from each photodiode PD to the detection device 40.

[0027] The recognition device 40 includes the recognition circuit 48, a signal processor 44, a coordinate extraction device 45, a memory 46, a recognition timing control unit 47, and an image processor 49. Based on a control signal supplied by the recognition control unit 11, the recognition timing control unit 47 controls the recognition circuit 48, the signal processor 44, the coordinate extraction device 45, and the image processor 49 so that they operate synchronously.

[0028] The detection circuit 48 is, for example, an analog front-end circuit (AFE circuit). The detection circuit 48 is a signal processing circuit that incorporates the functions of at least one detection signal amplifier 42 and one analog-to-digital converter (A / D converter) 43. The detection signal amplifier 42 amplifies the detection signal Vdet. The A / D converter 43 converts an analog signal output from the detection signal amplifier 42 into a digital signal.

[0029] The signal processor 44 is a logic circuit that detects a predefined physical quantity, recorded by the sensor 10, based on an output signal from the detection circuit 48. When the finger Fg is in contact with or near a detection surface, the signal processor 44 can detect irregularities on the surface of the finger Fg or the palm based on the signal from the detection circuit 48. The signal processor 44 can also detect biological data based on the signal from the detection circuit 48. Examples of biological data include the blood vessel pattern, pulse waveform, pulse rate, and / or blood oxygen concentration of the finger Fg or palm.

[0030] The signal processor 44 can acquire the detection signals Vdet (the biological data) simultaneously detected by the photodiodes PD and average the detection signals Vdet. In this case, the detection device 40 can perform stable detection by reducing a measurement error caused by noise or a relative offset between the detection target object, such as the finger Fg, and the sensor 10.

[0031] Memory 46 temporarily stores a signal that was calculated by signal processor 44. Memory 46 can be, for example, a read / write memory (RAM) or a register circuit.

[0032] The coordinate extraction device 45 is a logic circuit that, when contact or proximity of the finger is detected by the signal processor 44, obtains recognition coordinates of the surface irregularities, e.g., of the finger. The coordinate extraction device 45 is also a logic circuit that obtains detected coordinates of blood vessels of the finger Fg or the palm. The image processor 49 combines the detection signals Vdet, which are output by the respective photodiodes PD of the sensor 10, to generate two-dimensional data representing the shape of the surface irregularities, e.g., of the finger Fg, and two-dimensional data representing the shape of the blood vessels of the finger Fg or the palm. The coordinate extraction device 45 can output the detection signals Vdet as sensor outputs Vo without calculating the detection coordinates.There may be a case in which the coordinate extraction device 45 and the image processor 49 are not included in the recognition device 40.

[0033] The following describes a circuit configuration example of the detection device 1. Fig. Figure 3 is a circuit diagram illustrating the detection device. Fig. Figure 4 is a circuit diagram illustrating several detection sub-areas. Fig. Figure 4 also illustrates a circuit configuration of the detection circuit 48.

[0034] As in Fig. As illustrated in Figure 3, the sensor 10 has several detection sub-areas PAA arranged in a matrix with a row / column configuration. Each detection sub-area PAA is equipped with the photodiode PD.

[0035] The gate lines GCL run in the first direction Dx and are coupled to the detection sub-areas PAA, which are also arranged in the first direction Dx. Several gate lines GCL(1), GCL(2), ..., GCL(8) are arranged in the second direction Dy and are each coupled to the gate line drive circuit 15. In the following description, the gate lines GCL(1), GCL(2), ..., GCL(8) are each simply referred to as the gate line GCL when they do not need to be distinguished from one another. For ease of understanding, the description is illustrated. Fig. 3 eight gate lines GCL. However, this is only an example and M gate lines GCL (where M is eight or greater and e.g. 256) can be arranged.

[0036] The signal lines SGL run in the second direction Dy and are coupled to the photodiodes PD of the detection sub-areas PAA, which are arranged in the second direction Dy. Several signal lines SGL(1), SGL(2), ..., SGL(12) are arranged in the first direction Dx and are each coupled to the signal line selection circuit 16 and a reset circuit 17. In the following description, the signal lines SGL(1), SGL(2), ..., SGL(12) are each simply referred to as the signal line SGL when they do not need to be distinguished from one another.

[0037] For ease of understanding, 12 signal lines SGL are illustrated. However, this is merely an example, and N signal lines SGL (where N is 12 or greater, e.g., 252) can be arranged. Fig. In section 3, sensor 10 is positioned between signal line selector 16 and reset circuit 17. The configuration is not limited to this. Signal line selector 16 and reset circuit 17 can be coupled at ends in the same direction as the signal lines SGL. For example, a sensor has a detection area of ​​essentially 50 × 50 µm. 2 The detection area AA has a resolution of, for example, 508 pixels per inch (ppi). The number of sensors arranged in the detection area AA is, for example, 252 cells × 256 cells. The detection area AA has an area of, for example, 12.6 × 12.8 mm. 2 .

[0038] The gate line control circuit 15 receives the various control signals such as the start signal STV, the clock signal CK and the reset signal RST1 from the control circuit 122 (see Fig. 2) The gate line drive circuit 15 sequentially selects the gate lines GCL(1), GCL(2), ..., GCL(8) in a time-division multiplexing manner based on the various control signals. The gate line drive circuit 15 supplies the gate drive signal Vgcl to the selected gate line GCL. This process supplies the gate drive signal Vgcl to several first switching elements Tr, which are coupled to the gate line GCL, and corresponding detection sub-areas PAA, which are arranged in the first direction Dx, are selected as detection targets.

[0039] The gate-line drive circuit 15 can perform different drive actions for each of the detection modes, which include fingerprint recognition and the recognition of various elements of biological data (such as pulse wave, pulse rate, blood vessel pattern, and blood oxygen concentration). For example, the gate-line drive circuit 15 can drive more than one gate line GCL in a bundle.

[0040] Specifically, the gate line drive circuit 15 simultaneously selects a predetermined number of gate lines GCL from the gate lines GCL(1), GCL(2), ..., GCL(8) based on the control signals. For example, the gate line drive circuit 15 simultaneously selects six gate lines GCL(1) to GCL(6) and supplies them with the gate drive signals Vgcl. The gate line drive circuit 15 supplies the gate drive signals Vgcl via the selected six gate lines GCL to the first switching elements Tr. Through this process, detection area groups PAG1 and PAG2, each containing more than one detection sub-area PAA arranged in the first direction Dx and the second direction Dy, are selected as the respective detection targets. The gate line control circuit 15 controls the specified number of gate lines GCL in a bundle and sequentially delivers the gate control signals Vgcl to each of the specified number of gate lines GCL.

[0041] The signal line selection circuit 16 contains several selection signal lines Lsel, several output signal lines Lout, and third switching elements TrS. The third switching elements TrS are provided corresponding to the signal lines SGL. Six signal lines SGL(1), SGL(2), ..., SGL(6) are connected to a common output signal line Lout1. Six signal lines SGL(7), SGL(8), ..., SGL(12) are connected to a common output signal line Lout2. The output signal lines Lout1 and Lout2 are each connected to the detection circuit 48.

[0042] The signal lines SGL(1), SGL(2), ..., SGL(6) are grouped into a first signal line block, and the signal lines SGL(7), SGL(8), ..., SGL(12) are grouped into a second signal line block. The selection signal lines Lsel are each coupled to the gates of the third switching elements TrS contained in a signal line block. One of the selection signal lines Lsel is coupled to the gates of the third switching elements TrS in the signal line blocks.

[0043] Specifically, selection signal lines Lsel1, Lsel2, ..., Lsel6 are coupled to the third switching elements TrS, each corresponding to signal lines SGL(1), SGL(2), ..., SGL(6). Selection signal line Lsel1 is coupled to the third switching element TrS corresponding to signal line SGL(1) and the third switching element TrS corresponding to signal line SGL(7). Selection signal line Lsel2 is coupled to the third switching element TrS corresponding to signal line SGL(2) and the third switching element TrS corresponding to signal line SGL(8).

[0044] The control circuit 122 (see Fig. 1) sequentially supplies the selection signal ASW to the selection signal lines Lsel. By actuating the third switching element TrS, the signal line selection circuit 16 sequentially selects the signal lines SGL in one of the signal line blocks using time-division multiplexing. The signal line selection circuit 16 selects one signal line SGL in each signal line block. With the configuration described above, the detection device 1 can reduce the number of integrated circuits (ICs) containing the detection circuit 48 or the number of connections of the ICs.

[0045] The signal line selection circuit 16 can couple more than one signal line SGL in a bundle to the detection circuit 48. Specifically, the control circuit 122 (see Fig. 1) The selection signal ASW is simultaneously connected to the selection signal lines Lsel. With this process, the signal line selection circuit 16, by actuating the third switching element TrS, selects the signal lines SGL (e.g., six signal lines SGL) in a signal line block and connects the signal lines SGL to the detection circuit 48. As a result, signals detected in the detection area groups PAG1 and PAG2 are output to the detection circuit 48. In this case, signals from the detection sub-areas PAA (the photodiodes PD) contained in the detection area groups PAG1 and PAG2 are combined and output to the detection circuit 48.

[0046] By actuating the gate line drive circuit 15 and the signal line selector circuit 16, detection is performed for each of the detection area groups PAG1 and PAG2. As a result, the intensity of the detection signal Vdet obtained from a detection process increases, thus improving the sensor sensitivity. Additionally, the time required for detection can be reduced. Consequently, the detection device 1 can repeat the detection process in a short time, thereby improving the signal-to-noise ratio (S / N ratio) and accurately detecting changes in biological data, such as the pulse wave, over time.

[0047] As in Fig. As illustrated in Figure 3, the reset circuit 17 includes a reference signal line Lvr, a reset signal line Lrst, and fourth switching elements TrR. The fourth switching elements TrR correspond to the signal lines SGL. The reference signal line Lvr is connected to either the sources or the drains of the fourth switching elements TrR. The reset signal line Lrst is connected to the gates of the fourth switching elements TrR.

[0048] The control circuit 122 provides a reset signal RST2 to the reset signal line Lrst. This process activates the fourth switching elements TrR to electrically couple the signal lines SGL to the reference signal line Lvr. The power supply circuit 123 provides a reference signal COM to the reference signal line Lvr. This process provides the reference signal COM to a capacitive element Ca (see Fig. 4), which is included in each recognition sub-area PAA.

[0049] As in Fig. As illustrated in Figure 4, each detection sub-area PAA contains the photodiode PD, the capacitive element Ca, and the first switching element Tr. Fig. Figure 4 illustrates two gate lines GCL(m) and GCL(m + 1) arranged in the second direction Dy, below the gate lines GCL, and illustrates two signal lines SGL(n) and SGL(n + 1) arranged in the first direction Dx, below the signal lines SGL. The detection subregion PAA is a region surrounded by the gate lines GCL and the signal lines SGL. Each first switching element Tr corresponds to each photodiode PD. The first switching element Tr contains a thin-film transistor and, in this example, an N-channel metal-oxide-semiconductor thin-film transistor (NMOS-TFT).

[0050] The gates of the first switching elements Tr, belonging to the detection sub-areas PAA arranged in the first direction Dx, are coupled to the gate line GCL. The sources of the first switching elements Tr, belonging to the detection sub-areas PAA arranged in the second direction Dy, are coupled to the signal line SGL. The drain of the first switching element Tr is coupled to the cathode of the photodiode PD and the capacitive element Ca.

[0051] The anode of the photodiode PD is supplied with the sensor power supply signal VDDSNS from the power supply circuit 123. The signal line SGL and the capacitive element Ca are supplied with the reference signal COM, which serves as an output potential for the signal line SGL and the capacitive element Ca, from the power supply circuit 123.

[0052] When the detection area PAA is illuminated with light, a current corresponding to the amount of light flows through the photodiode PD. As a result, an electrical charge is stored in the capacitive element Ca. After the first switching element Tr is switched on, a current corresponding to the electrical charge stored in the capacitive element Ca flows through the signal line SGL. The signal line SGL is coupled to the detection circuit 48 via a corresponding third switching element TrS of the signal line selector circuit 16. Thus, the detection device 1 can detect a signal corresponding to the amount of light illuminating the photodiode PD in each detection area PAA, or signals corresponding to the amounts of light illuminating the photodiodes PD in each detection area group PAG1 and PAG2.

[0053] During a reading period Pdet (see Fig. 7) A switch SSW of the detection circuit 48 is switched on, and the detection circuit 48 is coupled to the signal lines SGL. The detection signal amplifier 42 of the detection circuit 48 converts a fluctuation of a current supplied by the signal lines SGL into a fluctuation of a voltage and amplifies the result. A reference voltage Vref, which has a fixed potential, is supplied to a non-inverting input section (+) of the detection signal amplifier 42, and the signal lines SGL are coupled to an inverting input section (-) of the detection signal amplifier 42. In the present embodiment, the same signal as the reference signal COM is supplied as the reference voltage Vref. The detection signal amplifier 42 includes a capacitive element Cb and a reset switch RSW. During a reset period Prst (see Fig. 7) The reset switch RSW is switched on and an electrical charge of the capacitive element Cb is reset.

[0054] The following describes a configuration of the photodiode PD. Fig. Figure 5 is a sectional view illustrating a schematic section configuration of the sensor.

[0055] As in Fig. As illustrated in Figure 5, the sensor 10 comprises the sensor base 21, a TFT layer 22, an insulating layer 23, the photodiode PD, and a thin protective layer 24. The sensor base 21 is an insulating base and is manufactured using, for example, glass or a resin material. The sensor base 21 is not limited to having a flat plate shape and can have a curved surface. In this case, the sensor base 21 can be made of resin in the form of a thin layer. The sensor base 21 has a first surface S1 and a second surface S2 on the side opposite the first surface S1. The TFT layer 22, the insulating layer 23, the photodiode PD, and the thin protective layer 24 are stacked on the first surface S1 in the listed order.

[0056] The TFT layer 22 is equipped with circuits such as the gate line drive circuit 15 and the signal line selector circuit 16, which are described above. The TFT layer 22 is also equipped with thin-film transistors (TFTs), such as the first switching element Tr, and various types of wiring, such as the gate lines GCL and the signal lines SGL. The sensor base 21 and the TFT layer 22, which serve as a driver board that controls the sensor for each predefined detection range, are also referred to as a bus board.

[0057] The insulating layer 23 is an inorganic insulating layer. For example, an oxide such as silicon dioxide (SiO2) or a nitride such as silicon nitride (SiN) is used as insulating layer 23.

[0058] The photodiode PD is provided on the insulating layer 23. The photodiode PD comprises a photoelectric conversion layer 31, a cathode electrode 35, and an anode electrode 34. The cathode electrode 35, the photoelectric conversion layer 31, and the anode electrode 34 are stacked in the listed order in a direction perpendicular to the first surface S1 of the sensor base 21. The stacking order in the photodiode PD can be as follows: the anode electrode 34, the photoelectric conversion layer 31, and the cathode electrode 35.

[0059] The properties (such as a voltage / current characteristic and a resistance value) of the photoelectric conversion layer 31 vary depending on the irradiating light. An organic material is used as the material of the photoelectric conversion layer 31. Specifically, a low molecular weight organic material such as C can be used. 60 (Fullerene), Phenyl-C 61-Butyric acid methyl ester (PCBM), copper phthalocyanine (CuPc), fluorinated copper phthalocyanine (F 16 CuPc), Rubren (5,6,11,12-Tetraphenyltetracene) or PDI (a derivative of perylene) are used as the photoelectric conversion layer 31.

[0060] The photoelectric conversion layer 31 can be formed by a vapor deposition process (a dry process) using one of the low molecular weight organic materials listed above. In this case, the photoelectric conversion layer 31 can be a thin laminated layer of CuPc and F16CuPc or a thin laminated layer of Rubren and C 60The photoelectric conversion layer 31 can also be formed by an application process (a wet process). In this case, a material obtained by combining one of the low molecular weight organic materials listed above with an organic polymer material is used as the photoelectric conversion layer 31. For example, poly(3-hexylthiophene) (P3HT) or F8-alt benzothiadiazole (F8BT) can be used as the organic polymer material. The photoelectric conversion layer 31 can be a thin layer formed by a mixture of P3HT and PCBM, or a thin layer formed by a mixture of F8BT and PDI.

[0061] The cathode electrode 35 faces the anode electrode 34, with the photoelectric junction layer 31 positioned between them. A transparent conductor material, such as indium tin oxide (ITO), is used as the anode electrode 34. A metallic material, such as silver (Ag) or aluminum (Al), is used as the cathode electrode 35. Alternatively, the cathode electrode 35 can be an alloy containing one or more of these metallic materials.

[0062] The cathode electrode 35 can be formed as a translucent electrode by controlling the thickness of its thin layer. For example, the cathode electrode 35 is formed from an Ag thin film with a thickness of 10 nm to achieve a light transmittance of approximately 60%. In this case, the photodiode PD can detect light emitted from both surfaces of the sensor base 21, i.e., both the first light L61, emitted from the first surface S1, and the second light L62, emitted from the second surface S2.

[0063] The thin protective layer 24 is designed to cover the anode electrode 34. The thin protective layer 24 is a thin passivation layer and is intended to protect the photodiode PD.

[0064] Fig. Figure 6 is a graph that schematically illustrates the relationship between wavelength and the conversion efficiency of light incident on the photodiode. The horizontal axis of the graph, which is shown in Fig. Figure 6 illustrates the wavelength of the light incident on photodiode PD, and the vertical axis of the graph represents an external quantum yield of photodiode PD. The external quantum yield is expressed as a ratio between the number of photons of light incident on photodiode PD and a current flowing from photodiode PD to external detection circuit 48.

[0065] As in Fig. As illustrated in Figure 6, the photodiode PD has excellent efficiency in a wavelength range from approximately 300 nm to approximately 1000 nm. This means that the photodiode PD is sensitive to the wavelengths of both the first light L61, emitted by the first light sources 61, and the second light L62, emitted by the second light sources 62. Therefore, each photodiode PD can detect multiple beams of light with different wavelengths.

[0066] The following describes an operating example of the detection device 1. Fig. Figure 7 is a time waveform diagram illustrating the operating example of the detection device. Fig. Figure 8 is a time waveform diagram that illustrates the operational example during the reading period. Fig. 7 illustrates.

[0067] As in Fig. As illustrated in Figure 7, the detection device 1 has a reset period Prst, an exposure period Pex, and a read period Pdet. The power supply circuit 123 provides the sensor current supply signal VDDSNS to the anode of the photodiode PD via the reset period Prst, the exposure period Pex, and the read period Pdet. The sensor current supply signal VDDSNS is a signal for applying a reverse bias voltage between the anode and the cathode of the photodiode PD. For example, the reference signal COM of essentially 0.75 V is applied to the cathode of the photodiode PD, and the sensor current supply signal VDDSNS of essentially -1.25 V is applied to the anode of the photodiode PD. As a result, a reverse bias voltage of essentially 2.0 V is applied between the anode and the cathode.At the point of detection of a wavelength of 850 nm, a reverse bias voltage of 2 V is applied to the photodiode PD to achieve high sensitivity in the range of 0.5 A / W to 0.7 A / W, preferably around 0.57 A / W. The following properties of the photodiode PD are used: the dark current density is 1.0 × 10⁻⁶. -7 A / cm 2 , when the reverse bias of 2 V is applied, and the photocurrent density is 1.2 × 10 -3 A / cm 2 , if light has a power of essentially 2.9 mW / cm 2and has a wavelength of 850 nm. The external quantum efficiency (EQE) is approximately 1.0 when a reverse bias of 2 V is applied when the photodiode is irradiated with light having a wavelength of 850 nm. The control circuit 122 sets the reset signal RST2 to "H" and then supplies the start signal STV and the clock signal CK to the gate-line drive circuit 15 to start the reset period Prst. During the reset period Prst, the control circuit 122 supplies the reference signal COM to the reset circuit 17 and uses the reset signal RST2 to turn on the fourth switching element TrR to supply a reset voltage. This operation supplies the reference signal COM as the reset voltage to the signal lines SGL. The reference signal COM is set to, for example, 0.75 V.

[0068] During the reset period Prst, the gate line drive circuit 15 sequentially selects each gate line GCL based on the start signal STV, the clock signal CK, and the reset signal RST1. The gate line drive circuit 15 sequentially supplies the gate drive signals Vgcl to each gate line GCL. The gate drive signal Vgcl has a pulsed waveform, comprising a supply voltage VDD, which serves as a high-level voltage, and a supply voltage VSS, which serves as a low-level voltage. Fig. 7 M gate lines GCL (where M is e.g. 256) are provided and gate drive signals Vgcl(1) ..., Vgcl(M) are supplied sequentially to the respective gate lines GCL.

[0069] Thus, during the reset period Prst, the capacitive elements Ca of all detection sub-areas PAA are sequentially electrically coupled to the signal lines SGL and supplied with the reference signal COM. As a result, the electrical charges stored in the capacitance of the capacitive elements Ca are reset.

[0070] After the gate drive signal Vgcl(M) is supplied to the gate line GCL, the exposure period Pex begins. The start and end times of the actual exposure periods Pex(1), ..., Pex(M) in the detection sub-areas PAA corresponding to the gate lines GCL differ from each other. Each exposure period Pex(1), ..., Pex(M) starts at a time when, during the reset period Prst, the gate drive signal Vgcl changes from the supply voltage VDD (high level) to the supply voltage VSS (low level). Each exposure period Pex(1), ..., Pex(M) ends at a time when, during the read period Pdet, the gate drive signal Vgcl changes from the supply voltage VSS to the supply voltage VDD. The exposure times of the exposure periods Pex(1), ..., Pex(M) are equal.

[0071] During the exposure period Pex, the current corresponding to the light illuminating the photodiode PD flows into each of the detection sub-areas PAA. As a result, the electrical charge is stored in each of the capacitive elements Ca.

[0072] At a point before the read period Pdet starts, the control circuit 122 sets the reset signal RST2 to a low voltage level. This process stops the operation of the reset circuit 17. During the read period Pdet, the gate line drive circuit 15 sequentially supplies the gate drive signals Vgcl(1) ..., Vgcl(M) to the gate lines GCL in the same way as during the reset period Prst.

[0073] Specifically, it delivers, as in Fig. As illustrated in Figure 8, the gate line drive circuit 15 sends the gate drive signal Vgcl(1) to the gate line GCL(1) at a high voltage level (the power supply voltage VDD) for a period t(1). During this period, while the gate drive signal Vgcl(1) is at a high voltage level (power supply voltage VDD), the control circuit 122 sequentially supplies the selection signals ASW1, ..., ASW6 to the signal line selector circuit 16. This process sequentially or simultaneously couples the signal lines SGL of the detection sub-areas PAA, selected by the gate drive signal Vgcl(1), to the detection circuit 48. As a result, the detection signal Vdet for each detection sub-area PAA is supplied to the detection circuit 48. For example, a time of...Approximately 20 µs (essentially 20 µs) elapses from the moment the gate drive signal Vgcl(1) is set to a high level until the first selection signal ASW1 begins to be delivered, and a time of, for example, approximately 60 µs (essentially 60 µs) elapses while each selection signal ASW1, ..., ASW6 is delivered. Such a high-speed response can be achieved using thin-film transistors (TFTs) made of low-temperature polysilicon (LTPS), which has a mobility of essentially 40 cm. 2 / Vs possesses, can be manufactured.

[0074] Similarly, the gate line drive circuit 15 supplies the gate drive signals Vgcl(2), ..., Vgcl(M-1), Vgcl(M) at a high voltage level during the time periods t(2), ..., t(M-1), t(M) to the respective gate lines GCL(2), ..., GCL(M-1), GCL(M). That is, the gate line drive circuit 15 supplies the gate drive signal Vgcl to the gate line GCL during each time period t(1), t(2), ..., t(M-1), t(M). The signal line selector circuit 16 sequentially selects each signal line SGL based on the selection signal ASW in each time period in which the gate drive signal Vgcl is set to a high voltage level. The signal line selection circuit 16 sequentially couples each signal line SGL to the one detection circuit 48. Thus, the detection device 1 can output the detection signals Vdet of all detection sub-areas PAA to the detection circuit 48 during the reading period Pdet.

[0075] Although Fig. As illustrated in the example in Figure 8, where the gate line drive circuit 15 selects a gate line GCL at each interval t, the number of gate lines GCL to be selected is not limited to this example. The gate line drive circuit 15 can select a predetermined number (two or more) of gate lines GCL simultaneously and sequentially supply the gate drive signals Vgcl, in units corresponding to the predetermined number of gate lines GCL, to the gate lines GCL. The signal line selection circuit 16 can also couple a predetermined number (two or more) of signal lines SGL simultaneously to a detection circuit 48. Furthermore, the gate line drive circuit 15 can discard some of the gate lines GCL and sample the remaining ones. The dynamic range is, for example, approximately 10 3, if the exposure time Pex is approximately 4.3 ms. High resolution can be achieved by setting the frame rate to approximately 4.4 fps (essentially 4.4 fps).

[0076] The following describes a specific example of the arrangement of the sensor 10, the first light sources 61 and the second light sources 62 and an operating example of the sensor 10, the first light sources 61 and the second light sources 62. Fig. Figure 9 is a top view that schematically illustrates a relationship between the sensor, the first light sources and the second light sources in the detection device according to the first embodiment. Fig. Figure 10 is a side view that schematically illustrates the relationship between the sensor, the first light sources and the second light sources of the detection device according to the first embodiment. Fig. Figure 11 is an explanatory diagram to illustrate a relationship between controlling the sensor and the illumination processes of the light sources in the detection device.

[0077] As in Fig. As illustrated in Figure 9, the sensor 10 has a first detection area R1 and a second detection area R2, which are adjacent in the first direction Dx. The detection device 1 includes a first filter 63 and a second filter 64. The first filter 63 is arranged such that it overlaps the first detection area R1 and covers both ends in the second direction Dy and one end in the first direction Dx of the sensor 10. The first filter 63 has a first transmission band that contains at least the first maximum emission wavelength MW1. That is, the first filter 63 has a transmission band that transmits the first light L61 emitted by the first light sources 61 and does not transmit the second light L62 emitted by the second light sources 62.

[0078] The second filter 64 is arranged such that it overlaps with the second detection area R2 and covers both ends in the second direction Dy and the further end in the first direction Dx of the sensor 10. Fig. Figure 28 is a graph illustrating examples of the transfer characteristics of the second filter. In Graph 3, which is shown in Fig. As illustrated in Figure 28, the horizontal axis represents the wavelength and the vertical axis represents the light transmittance. Fig. As illustrated in Figure 28, the second filter 64 has a second transmission band that contains at least the second maximum emission wavelength MW2. That is, the second filter 64 has a transmission band that transmits the second light L62 emitted by the second light sources 62 and does not transmit the first light L61 emitted by the first light sources 61. The first filter 63 and the second filter 64 are each bandpass filters. In the transmission characteristics of the second filter 64, the center wavelength and the half-width can be changed in accordance with the emission spectrum and the second maximum emission wavelength MW2 of the second light L62, as is applicable in each case. As shown in Fig. As illustrated in Figure 28, a second filter 64a, for example, has a center wavelength of approximately 650 nm for the second transmission band, and a second filter 64b has a center wavelength of approximately 670 nm for the second transmission band. Although in Fig. As not illustrated in Figure 28, the transfer characteristics of the first filter 63 have the same waveform as those of Fig. 28 and have a center wavelength close to the first maximum emission wavelength MW1.

[0079] The first filter 63 and the second filter 64 overlap with the sensor 10 from one end to the other in a scanning direction SCAN and are adjacent to each other in a direction (the first direction Dx) that intersects the scanning direction SCAN. The scanning direction SCAN is the direction in which the gate line drive circuit 15 samples the gate lines GCL. That is, each gate line GCL is provided via the first detection area R1 and the second detection area R2 and is coupled to corresponding detection sub-areas PAA provided in the first detection area R1 and the second detection area R2. Each signal line SGL is provided in one of the first detection area R1 and the second detection area R2 and is coupled to the photodiodes PD in the first detection area R1 or the photodiodes PD in the second detection area R2.

[0080] The first light source base 51 faces the second light source base 52 in the second direction Dy, with the sensor 10 positioned between them in the top view. A surface of the first light source base 51 facing the second light source base 52 is provided with the first light sources 61 and the second light sources 62. A surface of the second light source base 52 facing the first light source base 51 is provided with the first light sources 61 and the second light sources 62. The first light source base 51 and the second light source base 52 can each be provided with one first light source 61 and more than one second light source 62.

[0081] The first light sources 61 and the second light sources 62 are arranged in the first direction Dx along the outer circumference of the detection area AA (the first detection area R1 and the second detection area R2). The first light sources 61 are positioned at locations corresponding to the first detection area R1 and emit the first light L61 in a direction parallel to the second direction Dy. The first light sources 61 face each other in the second direction Dy, with the first detection area R1 positioned between them.

[0082] The second light sources 62 are positioned at locations corresponding to the second detection area R2 and emit the second light L62 in a direction parallel to the second direction Dy. The second light sources 62 face each other in the second direction Dy, with the second detection area R2 positioned between them.

[0083] In other words, the first detection area R1 is an area equipped with the first filter 63 and is an area in which the first light L61 emitted by the first light sources 61 can be detected. The second detection area R2 is an area equipped with the second filter 64 and is an area in which the second light L62 emitted by the second light sources 62 can be detected.

[0084] Fig. Figure 10 is a side view obtained by viewing the detection device 1 from the first direction Dx. As in Fig. As illustrated in Figure 10, the detection target object, such as the finger Fg, comes into contact with or near the top of the sensor 10, whereby the first filter 63 and / or the second filter 64 ( Fig. Figure 10 illustrates the second filter (64) which is arranged in between. The first light sources 61 and the second light sources 62 ( Fig. Figure 10 illustrates the second light sources 62) are arranged above the sensor 10 and the first filter 63 and are arranged such that the detection target object, such as the finger Fg, is positioned between them in the second direction Dy.

[0085] The first light L61, emitted by the first light sources 61, travels in the direction parallel to the second direction Dy and falls on the finger Fg. The first light L61 is reflected at or within the surface of the finger Fg. A portion of the reflected light Ld, which was reflected by the finger Fg, travels in the third direction Dz and is passed through the first filter 63 to enter the first detection area R1 of the sensor 10. The first light L61 and the reflected light Ld are not passed through the second filter 64 and therefore do not fall on the second detection area R2.

[0086] Although it is in Fig. As not illustrated in Figure 10, the second light L62, emitted by the second light source 62, is reflected from the surface of or within the finger Fg in the same way as the first light L61. A portion of the reflected light Ld travels in the third direction Dz and is passed through the second filter 64 to enter the second detection area R2 of the sensor 10. The second light L62 and the reflected light Ld are not passed through the first filter 63 and therefore do not enter the first detection area R1. Thus, the superposition of the detection signal Vdet based on the first light L61 (which can be referred to below as the "first detection signal") with the detection signal Vdet based on the second light L62 (which can be referred to below as the "second detection signal") can be limited.

[0087] As in Fig. As illustrated in Figure 11, the detection device 1 performs the processing described above during each of the time periods t(1) to t(4), specifically during the reset period Prst, the exposure period Pex, and the read period Pdet. During the reset period Prst and the read period Pdet, the gate line drive circuit 15 sequentially samples the gate lines GCL(1) to GCL(M).

[0088] During period t(1), the second light sources 62 are on and the first light sources 61 are off. Therefore, the detection device 1 performs detection in the second detection area R2 based on the second light L62 emitted by the second light sources 62. That is, currents flow from the photodiodes PD belonging to the second detection area R2 via the signal lines SGL to the detection circuit 48. During period t(2), the first light sources 61 are on and the second light sources 62 are off. Therefore, the detection device 1 performs detection in the first detection area R1 based on the first light L61 emitted by the first light sources 61. That is, currents flow from the photodiodes PD belonging to the first detection area R1 via the signal lines SGL to the detection circuit 48.In the same way, during the period t(3) the second light sources 62 are on and the first light sources 61 are off, and during the period t(4) the first light sources 61 are on and the second light sources 62 are off.

[0089] In this way, the first light sources 61 and the second light sources 62 are switched on in a time-division multiplexed manner at intervals of the period t. This process outputs the first detection signals, detected by the photodiodes PD based on the first light L61, and the second detection signals, detected by the photodiodes PD based on the second light L62, to the detection circuit 48 in a time-division multiplexed manner. Consequently, the first and second detection signals are prevented from being output to the detection circuit 48 in a mutually superimposed manner. As a result, the detection device 1 can reliably detect the various types of biological data.

[0090] The control method for the first light sources 61 and the second light sources 62 can be changed as applicable. For example, in Fig. Equation 11 causes the first light sources 61 and the second light sources 62 to be alternately switched on at intervals of the period t. However, the control method is not limited to this. The first light sources 61 can be switched on in successive periods t, and then the second light sources 62 can be switched on in successive periods t. (First amendment to the first embodiment)

[0091] Fig. Figure 12 is an explanatory diagram illustrating the relationship between the sensor activation and the illumination processes of the light sources according to a first amendment of the first embodiment. In the first amendment, the first light sources 61 and the second light sources 62 are illuminated simultaneously. Furthermore, in this case, the first light L61 emitted by the first light sources 61 is not transmitted through the second filter 64 and therefore does not enter the second detection area R2. Similarly, the second light L62 emitted by the second light sources 62 is not transmitted through the first filter 63 and therefore does not enter the first detection area R1.Accordingly, the superposition of the first detection signals, which are output from the first detection area R1 based on the first light L61, with the second detection signals, which are output from the second detection area R2 based on the second light L62, is restricted.

[0092] The first light sources 61 and the second light sources 62 are on during the exposure period Pex and off during the reset period Prst and the reading period Pdet. This process allows the detection device 1 to reduce the power consumption required for detection.

[0093] The lighting processes are not limited to the example given in Fig. Figure 12 illustrates this. The first light sources 61 and the second light sources 62 can be continuously on for all time periods that include the reset period Prst, the exposure period Pex, and the read period Pdet. Either the first light sources 61 or the second light sources 62 can be on during the exposure period Pex, and the first light sources 61 and the second light sources 62 can be switched on alternately at intervals of the period t. (Second amendment to the first embodiment)

[0094] Fig. Figure 13 is an explanatory diagram illustrating the relationship between the sensor control and the illumination processes of the light sources according to a second amendment of the first embodiment. As in Fig. As illustrated in Figure 13, in the second modification, the gate line drive circuit 15 provides the gate drive signals Vgcl to some gate lines GCL. For example, during the reset period Prst and the read period Pdet, the gate line drive circuit 15 sequentially provides the gate drive signals Vgcl to four gate lines GCL(m) to GCL(m + 3). The gate lines GCL(1) to GCL(m - 1) and the gate lines GCL(m + 4) to GCL(M) are not selected as gate lines to be driven and are not supplied with the gate drive signals Vgcl.

[0095] As a result, the first and second detection signals from the detection sub-areas PAA, which are coupled to the gate lines GCL(m) to GCL(m + 3), are output. No detection signals are output from the detection sub-areas PAA that are coupled to the gate lines GCL that are not selected.

[0096] In the present embodiment, only some of the gate lines GCL are sampled, thus reducing the time required for detection. As a result, detection is performed quickly, enabling the reliable detection of changes in the target object over time, such as a pulse. An area overlapping with the finger Fg can be selected and detected, and the detection of this overlapping area can be repeated. Consequently, the detection device 1 can improve the signal-to-noise ratio during detection.

[0097] Any method can be used to select the gate lines GCL to be driven. For example, the gate line drive circuit 15 scans gate lines GCL(1) to GCL(M) to perform detection across the entire detection area AA, and the detection device 40 identifies the presence and position of finger Fg. The control circuit 122 can select the gate lines GCL to be driven based on the position of finger Fg. Alternatively, a capacitive touch-sensitive control panel can be provided, and the touch-sensitive control panel can identify the position of finger Fg.

[0098] In Fig. In 13, either the first light sources 61 or the second light sources 62 are only on during the exposure period Pex, and the first light sources 61 and the second light sources 62 are switched on alternately at intervals of the period t. However, the lighting operations are not limited to this. The first light sources 61 and the second light sources 62 can be caused to be on simultaneously, or the first light sources 61 and the second light sources 62 can be on continuously for all periods that include the reset period Prst, the exposure period Pex, and the read period Pdet. (Second embodiment)

[0099] Fig. Figure 14 is a top view that schematically illustrates a relationship between the sensor, the first light sources and the second light sources of the detection device according to a second embodiment. Fig. Figure 15 is a side view that schematically illustrates the relationship between the sensor, the first light sources and the second light sources of the detection device according to the second embodiment. Fig. Figure 16 is an explanatory diagram illustrating the relationship between the sensor control and the illumination processes of the light sources in the detection device according to the second embodiment. In the following description, the components described in the embodiment described above are designated by the same reference numerals and are not described.

[0100] As in Fig. As illustrated in Figure 14, the first detection area R1 and the second detection area R2 of the sensor 10 are arranged adjacent to each other in the second direction Dy. The first filter 63 is arranged such that it overlaps the first detection area R1 and covers both ends in the first direction Dx and one end in the second direction Dy of the sensor 10. The second filter 64 is arranged such that it overlaps the second detection area R2 and covers both ends in the first direction Dx and the remaining end in the second direction Dy of the sensor 10.

[0101] The first filter 63 and the second filter 64 overlap with the sensor 10 from one end to the other in the first direction Dx and are adjacent to each other in the second direction Dy. This means that each gate line GCL is located either in the first detection area R1 or in the second detection area R2 and is coupled to corresponding detection sub-areas PAA in the first detection area R1 or corresponding detection sub-areas PAA in the second detection area R2. Each signal line SGL is located across the first detection area R1 and the second detection area R2 and is coupled to corresponding photodiodes PD in the first detection area R1 and corresponding photodiodes PD in the second detection area R2.

[0102] The first light source base 51 faces the second light source base 52 in the first direction Dx, with the sensor 10 positioned between them in the top view. A surface of the first light source base 51 facing the second light source base 52 is provided with the first light sources 61 and the second light sources 62. A surface of the second light source base 52 facing the first light source base 51 is provided with the first light sources 61 and the second light sources 62.

[0103] The first light sources 61 and the second light sources 62 are arranged in the second direction Dy along the outer circumference of the detection area AA (the first detection area R1 and the second detection area R2). The first light sources 61 are positioned at locations corresponding to the first detection area R1 and emit the first light L61 in a direction parallel to the first direction Dx. The first light sources 61 face each other in the first direction Dx, with the first detection area R1 positioned between them.

[0104] The second light sources 62 are positioned at locations corresponding to the second detection area R2 and emit the second light L62 in a direction parallel to the first direction Dx. The second light sources 62 face each other in the first direction Dx, with the second detection area R2 positioned between them.

[0105] Fig. Figure 15 is a side view obtained by viewing the detection device 1 from the first direction Dx. As in Fig. As illustrated in Figure 15, the recognition target object, such as the finger Fg, is located above the sensor 10, with the first filter 63 and / or the second filter 64 positioned between them. The first light sources 61 and the second light sources 62 are positioned above the sensor 10, and the first filter 63 and the second filter 64 are arranged such that the recognition target object, such as the finger Fg, is positioned between them in the first direction Dx.

[0106] Both the first light L61, emitted by the first light sources 61, and the second light L62, emitted by the second light sources 62, travel in the direction parallel to the first direction Dx and strike the finger Fg. The first light L61 and the second light L62 are reflected and scattered at the surface of or within the finger Fg, and a portion of the reflected light Ld travels in the third direction Dz. This portion of the reflected light Ld passes through the first filter 63 or the second filter 64 and enters the sensor 10.

[0107] As described above, each signal line SGL is provided via the first detection area R1 and the second detection area R2. Therefore, in the present embodiment, detection in the first detection area R1 and detection in the second detection area R2 are performed in a time-division multiplexing manner. Specifically, as described in Fig. As illustrated in Figure 16, the gate line drive circuit 15 sequentially de-energizes the gate lines GCL(1) to GCL(m) during the period t(1). The gate lines GCL(1) to GCL(m) are the gate lines GCL that correspond to the second detection area R2, which is shown in Figure 16. Fig. Figure 14 illustrates the gate line drive circuit 15, which scans the gate lines GCL in a second scanning direction, SAMPLING2. Fig. 14 is illustrated, from.

[0108] The gate drive signals Vgcl are not supplied to the gate lines GCL belonging to the first detection area R1 (the gate lines GCL(m + 1) to (M)) during the period t(1). As a result, the photodiodes PD in the first detection area R1 remain decoupled from the signal lines SGL.

[0109] Thus, during period t(1), the detection device 1 performs detection in the second detection area R2 based on the second light L62 emitted by the second light sources 62. That is, currents flow from the photodiodes PD, belonging to the second detection area R2, via the signal lines SGL to the detection circuit 48. During period t(1), although both the first light sources 61 and the second light sources 62 are on, the first light L61 emitted by the first light sources 61 is not passed through the second filter 64 and therefore does not enter the second detection area R2. Consequently, the detection device 1 can successfully perform detection based on the second light L62.

[0110] Then, during the period t(2), the gate line drive circuit 15 sequentially supplies the gate drive signals Vgcl to the gate lines GCL(M) to GCL(m + 1). The gate lines GCL(M) to GCL(m + 1) are gate lines GCL, which correspond to the first detection area R1, which is in Fig. Figure 14 illustrates the gate line drive circuit 15, which scans the gate lines GCL in a first scanning direction SAMPLING1, as shown in Fig. Figure 14 illustrates this. The first scanning direction, SAMPLING1, is the opposite direction to the second scanning direction, SAMPLING2.

[0111] The gate drive signals Vgcl are not supplied to the gate lines GCL belonging to the second detection area R2 (gate lines GCL(1) to (m)) during the period t(2). As a result, the photodiodes PD in the second detection area R2 remain decoupled from the signal lines SGL.

[0112] Thus, during the period t(2), the detection device 1 performs the detection in the first detection area R1 based on the first light L61 emitted by the first light sources 61. That is, the currents flow from the photodiodes PD, which belong to the first detection area R1, via the signal lines SGL to the detection circuit 48.

[0113] During time periods t(3) and t(4), the same operations are performed repeatedly as in time periods t(1) and t(2), respectively. As described above, the gate line drive circuit 15 sequentially supplies the gate drive signals Vgcl in the first scanning direction SAMPLE1 to the gate lines GCL located in the first detection area R1 (the gate lines GCL(m + 1) to (M)). During a period different from the detection period of the first detection area R1, the gate line drive circuit 15 sequentially supplies the gate drive signals Vgcl in the second scanning direction SAMPLE2, which is opposite to the first scanning direction SAMPLE1, to the gate lines located in the second detection area R2 (the gate lines GCL(m + 1) to GCL(M)).

[0114] With this configuration, even if each signal line SGL is provided via the first detection area R1 and the second detection area R2, the superposition of the first detection signals, which are output based on the first light L61 from the first detection area R1, with the second detection signals, which are output based on the second light L62 from the second detection area R2, can be limited.

[0115] Although in Fig. 16. The illumination processes are not limited to the first light sources 61 and the second light sources 62 being continuously on over the reset period Prst, the exposure period Pex, and the reading period Pdet. The operation of the first light sources 61 and the second light sources 62, as illustrated in the first embodiment, the first amendment, and the second amendment described above, can also be applied to the second embodiment.

[0116] This means that during period t(1), the second light sources 62 can be on and the first light sources 61 can be off, and during period t(2), the first light sources 61 can be on and the second light sources 62 can be off. In this way, the first light sources 61 and the second light sources 62 can be switched on alternately. Alternatively, the first light sources 61 and the second light sources 62 can only be on during the exposure period Pex. Alternatively once again, the gate line drive circuit 15 can drive some of the gate lines GCL belonging to the first detection area R1, or some of the gate lines GCL belonging to the second detection area R2, based on the position of the finger Fg. (Third embodiment)

[0117] Fig. Figure 17 is a side view that schematically illustrates a relationship between the sensor, the first light sources, and the second light sources of the detection device according to a third embodiment. As shown in Fig. As illustrated in Figure 17, the first filter 63 is located on the side of the first surface S1 of the sensor base 21. The photodiodes PD are located between the first filter 63 and the first surface S1. The second filter 64 is located on the side of the second surface S2 of the sensor base 21. That is, the sensor 10 is located between the first filter 63 and the second filter 64 in the third direction Dz.

[0118] The first light source base 51 faces the second light source base 52 in the third direction Dz, with the sensor 10 positioned between them. The first light source base 51 faces the first surface S1 of the sensor base 21. The first light sources 61 are located on a surface of the first light source base 51 that faces the first surface S1. That is, the first light sources 61 are positioned such that they face the first surface S1 in a direction perpendicular to the first surface S1. The first filter 63 is positioned between the photodiodes PD and the first light sources 61 in a direction perpendicular to the first surface S1.

[0119] The second light source base 52 faces the second surface S2 of the sensor base 21. The second light sources 62 are located on a surface of the second light source base 52 that faces the second surface S2. That is, the second light sources 62 are positioned such that they face the second surface S2 in a direction perpendicular to the second surface S2. The second filter 64 is located between the second surface S2 and the second light sources 62 in a direction perpendicular to the second surface S2.

[0120] In the third embodiment, the sensor 10 can detect biological data in a state where it is positioned between two fingers Fg1 and Fg2. The first light L61, emitted by the first light sources 61, passes through finger Fg1 and the first filter 63 and enters the sensor 10. The second light L62, emitted by the second light sources 62, passes through finger Fg2, the second filter 64, and the sensor base 21 and enters the sensor 10.

[0121] With the configuration described above, the different types of biological data on the fingers Fg can be detected in the third embodiment. The control method of the recognition device 1 according to the third embodiment is the same as that of Fig. 11 and is therefore not described in detail. (Fourth embodiment)

[0122] Fig. Figure 18 is a top view schematically illustrating the relationship between the sensor, the first light sources, and the second light sources of the detection device according to a fourth embodiment. In the fourth embodiment, the first light sources 61 and the second light sources 62 are provided on the first surface S1 of the sensor base 21, as shown in Fig. 18 is illustrated.

[0123] Specifically, the first light source 61 and the second light source 62 are provided in each detection sub-area PAA and are arranged adjacent to the photodiode PD in an area surrounded by the signal lines SGL and the gate lines GCL.

[0124] Both the first light L61, emitted by the first light source 61, and the second light L62, emitted by the second light source 62, move in a direction parallel to the third direction Dz, are reflected at the surface of or in the finger Fg and enter the photodiode PD.

[0125] Furthermore, in the fourth embodiment, various elements of the biological data can be detected using the first light L61 and the second light L62. Since the fourth embodiment does not require the provision of the first light source base 51 and the second light source base 52, the size of the detection device 1 can be reduced. The control method of the detection device 1 according to the fourth embodiment is the same as that of Fig. 11 and therefore it is not described exactly. The arrangement of the first light sources 61 and the second light sources 62, which are in Fig. Figure 18 is merely an example and can be modified as applicable. For example, each detection sub-area PAA can be equipped with either the first light source 61 or the second light source 62. In this case, the detection sub-areas PAA equipped with the first light source 61 and the detection sub-areas PAA equipped with the second light source 62 can be arranged alternately. (Fifth embodiment)

[0126] Fig. Figure 19 presents side views that schematically illustrate a relationship between the sensor, first light sources and second light sources of the detection device according to a fifth embodiment. Fig. Figure 19 illustrates operational examples in cases of different relative positional relationships between the finger Fg and the sensor 10. As in Fig. As illustrated in Figure 19, the sensor base 21 has a first curved surface Sa1 and a second curved surface Sa2 on the side opposite the first curved surface Sa1. The first curved surface Sa1 is convex in a direction from the second curved surface Sa2 to the first curved surface Sa1. The second curved surface Sa2 is concave along the surface of the finger Fg. The first curved surface Sa1 is equipped with photodiodes PD. The sensor base 21 can be made of a translucent resin material in the form of a thin film or a curved glass substrate.

[0127] Several first light sources 61-1, 61-2, and 61-3 are arranged along the first curved surface Sa1 and emit the first light L61 in different directions. Several second light sources 62-1, 62-2, and 62-3 are arranged such that they face the second curved surface Sa2 and emit the second light L62 in different directions. The first light source 61-1 and the second light source 62-3 are arranged such that the finger Fg is positioned between them and emit the first light L61 and the second light L62 in opposite directions. Similarly, the first light source 61-2 and the second light source 62-2 are arranged such that the finger Fg is positioned between them and emit the first light L61 and the second light L62 in opposite directions.The first light source 61-3 and the second light source 62-1 are arranged such that the finger Fg is positioned between them, and emit the first light L61 and the second light L62 in opposite directions.

[0128] In the following description, the first light sources 61-1, 61-2 and 61-3 are each referred to as the first light source 61 when they do not need to be distinguished from each other, and the second light sources 62-1, 62-2 and 62-3 are each referred to as the second light source 62 when they do not need to be distinguished from each other.

[0129] Although it is in Fig. As not illustrated in Figure 19, both the first light source base 51 and the second light source base 52 have a curved shape along the surface of the finger Fg. Alternatively, a light source base can be formed in a ring shape, such that it surrounds the finger Fg and the first light sources 61, and the second light sources 62 can be provided on the inner circumferential surface of the light source base.

[0130] In the fifth embodiment, the first light sources 61-1, 61-2 and 61-3 are switched on and the fingerprint of finger Fg is detected. The control circuit 122 detects the position and orientation of finger Fg based on the fingerprint data.

[0131] As in the left part of Fig. As illustrated in Figure 19, when the pad of the finger Fg is facing the underside of the sensor 10, the control circuit 122 switches on the first light source 61-2 and the second light source 62-2 below the first light sources 61-1, 61-2 and 61-3 and the second light sources 62-1, 62-2 and 62-3. The first light L61, emitted by the first light source 61-2, is reflected at the surface of or within the finger Fg and enters the photodiode PD. The second light L62, emitted by the second light source 62-2, is conducted through the finger Fg and enters the photodiode PD.

[0132] The right part of Fig. Figure 19 illustrates a case in which the relative positional relationship between the finger Fg and the sensor 10 is different, e.g., a case in which the pad of the finger Fg is positioned such that it faces a position displaced from the underside of the sensor 10. In this case, the control circuit 122 switches on the first light source 61-3 and the second light source 62-1 under the first light sources 61-1, 61-2 and 61-3 and the second light sources 62-1, 62-2 and 62-3.

[0133] In this way, in the fifth embodiment, even if the relative positional relationship between the finger Fg and the sensor 10 is shifted, the first light source 61 and the second light source 62, corresponding to the position (angle of rotation) of the finger Fg, are selected from the first light sources 61 and the second light sources 62 based on the positional information about the fingerprint of the finger Fg. As a result, the first light L61 and the second light L62 can illuminate the finger Fg effectively, and the biological data can be detected.

[0134] The first light sources 61-1, 61-2, and 61-3 and the second light sources 62-1, 62-2, and 62-3 are arranged at different positions and angles. Therefore, the recognition device 1 can detect biological data, such as blood vessel images observed from different angles, by sequentially activating the first light sources 61-1, 61-2, and 61-3 and the second light sources 62-1, 62-2, and 62-3. A stereoscopic blood vessel image can then be obtained by performing image processing on these blood vessel images. This processing allows the recognition device 1 to increase the accuracy of personal authentication when used, for example, for biometrics. (Third amendment to the fifth embodiment)

[0135] Fig. Figure 20 is a side view that schematically illustrates a relationship between the sensor, the first light sources, and the second light sources of the detection device according to a third amendment of the fifth embodiment. As shown in Fig. As illustrated in Figure 20, the third amendment differs from the fifth embodiment in that the second light sources 62-1 and 62-2 are provided on the sensor base 21.

[0136] Specifically, the second light sources 62-1 and 62-2 are located at the outer edges of the first curved surface Sa1 of the sensor base 21. In other words, each of the second light sources 62-1 and 62-2 is positioned between the photodiode PD and one end of the sensor base 21, and the photodiode PD is positioned between the second light source 62-1 and the second light sources 62-2. The second light sources 62-1 and 62-2 are positioned and angled differently from those of the first light sources 61-1, 61-2, and 61-3, and can emit the second light L62 at angles different from those of the first light L61.

[0137] Furthermore, in the third modification, even if the relative positional relationship between the finger Fg and the sensor 10 is shifted, the finger Fg can be illuminated with the first light L61 or the second light L62 at a suitable angle. Since the second light source base 52 can be removed, the configuration of the detection device 1 can be simplified. (Sixth embodiment)

[0138] Fig. Figure 21 is a top view that schematically illustrates a relationship between the sensor, the first light source and the second light source of the detection device according to a sixth embodiment. Fig. Figure 22 is a side view that schematically illustrates the relationship between the sensor, the first light source and the second light source of the detection device according to the sixth embodiment.

[0139] As in Fig. As illustrated in Figure 21, the first light source 61 and the second light source 62 are located within the circumferential region GA of the sensor base 21. Specifically, the sensor base 21 has a first side 21s1 and a second side 21s2, which face each other in the first direction Dx. The first light source 61 is located within a region of the circumferential region GA between the first side 21s1 and the outer circumference of the sensor 10. The second light source 62 is located within a region of the circumferential region GA between the second side 21s2 and the outer circumference of the sensor 10. The detection area AA is situated between the first light source 61 and the second light source 62.

[0140] Fig. Figure 21 schematically illustrates the first light source 61 and the second light source 62 as rectangular shapes. However, as described above, inorganic LEDs or organic ELs can be arranged as the first light source 61 and the second light source 62.

[0141] As in Fig. As illustrated in Figure 22, the sensor base 21 has the first curved surface Sa1 and the second curved surface Sa2 in the same way as in the fifth embodiment. The first light source 61 and the second light source 62 are provided on the first curved surface Sa1. The photodiodes PD are provided between the first light source 61 and the second light source 62. The second curved surface Sa2 has a shape curved along the surface of the ball of the finger Fg.

[0142] Both the first light L61, emitted by the first light source 61, and the second light L62, emitted by the second light source 62, are guided through the sensor base 21 and incident on the finger Fg. The first light L61 and the second light L62 are reflected at the surface of or within the finger Fg and are guided through the sensor base 21 in such a way that they enter the photodiodes PD.

[0143] Since the sixth embodiment does not require the provision of the first light source base 51 and the second light source base 52, the size of the detection device 1 can be reduced. Since the first light source 61 and the second light source 62 are provided in the peripheral area GA, the circuit configuration of the detection sub-areas PAA can be simpler than that of the fourth embodiment. (Seventh embodiment)

[0144] Fig. Figure 23 is a time-waveform diagram illustrating an operating example of the detection device according to a seventh embodiment. In the seventh embodiment, the gate line drive circuit 15 supplies the gate drive signals Vgcl at a high voltage level (the power supply voltage VDD) to a gate line block BKG(1), which contains more than one gate line GCL during a period ta(1). The gate line block BKG(1) contains, for example, the six gate lines GCL(1) to GCL(6), which in Fig. Figure 3 illustrates this. During a period when the gate drive signals Vgcl are at a high voltage level (the supply voltage VDD), the control circuit 122 simultaneously supplies the selection signals ASW1, ..., ASW6 to the signal line selection circuit 16. This operation causes the signal line selection circuit 16 to simultaneously couple six signal lines SGL to the detection circuit 48. As a result, the detection signals Vdet of the detection area groups PAG1 and PAG2, which are in Fig. 3 are illustrated, supplied for the detection circuit 48.

[0145] In the same way, the gate line drive circuit 15 supplies gate drive signals Vgcl(2), ..., Vgcl(s-1), Vgcl(s) at a high voltage level to the gate line blocks BKG(2), ..., BKG(s-1), BKG(s) during the time periods ta(2), ..., ta(s-1), ta(s). That is, the gate line drive circuit 15 supplies the gate drive signals Vgcl simultaneously to more than one gate line GCL for each time period ta.

[0146] Thus, during the read period Pdet, the detection device 1 can output the detection signals Vdet from each detection area group PAG to the detection circuit 48. The detection device 1 can increase the signal-to-noise ratio in the detection to a level higher than that which occurs when performing the detection for each detection sub-area PAA. Consequently, the detection device 1 can reliably detect biological data such as the blood vessel pattern. In the seventh embodiment, the time required for detection can be reduced across the entire detection area AA to perform the detection quickly, such that changes in the blood vessel pattern over time, such as the pulse wave, can be reliably detected.

[0147] Although Fig. Figure 23 illustrates the example in which the gate line drive circuit 15 drives the six gate lines GCL in a bundle; however, the drive method is not limited to this example. The gate line drive circuit 15 can drive five or fewer gate lines GCL in a bundle, or seven or more gate lines GCL in a bundle. The signal line selector circuit 16 can couple five or fewer signal lines SGL, or seven or more signal lines SGL, to the detection circuit 48 simultaneously.

[0148] The recognition device 1 can have a time period in which recognition is performed for each recognition sub-area PAA and a time period in which recognition is performed for each of the recognition area groups PAG, which are provided in a time-division multiplexing manner. For example, if recognition such as fingerprint recognition is performed with high resolution (at a small recognition distance), the recognition device 1 performs recognition for each recognition sub-area PAA; and if, for example, pulse wave detection, which does not need to be detected with high resolution, is performed, the recognition device 1 performs recognition for each recognition area group PAG.In this case, the detection device 1 can perform the detection by switching the illumination of the first light sources 61 and the illumination of the second light sources 62 in a time-division multiplexing manner between the detection period for each detection sub-area PAA and the detection period for each detection area group PAG. Through this process, the detection device 1 can perform both accurate detection and the detection of temporal changes according to the differences in the biological data.

[0149] Each of the recognition area groups PAG1 and PAG2, which are in Fig. Figure 3 illustrates a total of 36 (= 6 × 6) detection sub-areas PAA (photodiodes PD). However, the number of detection sub-areas PAA (photodiodes PD) contained in each detection area group PAG1 and PAG2 can be equal to or less than 35, or equal to or greater than 37. In the seventh embodiment, the number of gate lines GCL selected by the gate line drive circuit 15 can differ from the number of signal lines SGL selected by the signal line selector circuit 16. That is, in each detection area group PAG1 and PAG2, the number of detection sub-areas PAA (photodiodes PD) arranged in the first direction Dx can differ from the number of detection sub-areas PAA (photodiodes PD) arranged in the second direction Dy.

[0150] Although Fig. Figure 3 illustrates the two recognition area groups PAG1 and PAG2, which are adjacent in the first direction Dx. Three or more recognition area groups PAG are arranged in the first direction Dx, and more than one recognition area group PAG is arranged in the second direction Dy. That is, the recognition area groups PAG are arranged in a matrix that has a row / column configuration in the first direction Dx and the second direction Dy. (Eighth embodiment)

[0151] Fig. Figure 24 is a circuit diagram illustrating the detection sub-areas of the detection device according to an eighth embodiment. Fig. Figure 25 is a time waveform diagram illustrating an operating example of the detection device according to the eighth embodiment. As in Fig. As illustrated in Figure 24, the detection section PAA in the eighth embodiment does not contain the capacitive element Ca. That is, the source of the first switching element Tr is coupled to the signal line SGL and the drain of the first switching element Tr is coupled to the cathode of the photodiode PD.

[0152] If the detection area PAA is illuminated with light during the period in which the first switching element Tr is on, a current corresponding to the amount of light flows through the photodiode PD and the current flows from the photodiode PD via the signal line SGL to the detection circuit 48. That is, in the eighth embodiment, the time required to store the electrical charge in the capacitive element Ca can be eliminated.

[0153] As in Fig.As illustrated in Figure 25, after the gate drive signal Vgcl(M) is supplied to the gate line GCL(M) during the reset period Prst, the exposure period Pex is skipped and the read period Pdet begins. During the read period Pdet, when the gate drive signal Vgcl is supplied sequentially to each gate line GCL, the first switching element Tr is turned on and the photodiode PD is coupled to the signal line SGL. Current flows from the photodiode PD to the detection circuit 48 during the period in which the first switching element Tr is on. In other words, a period Pdet in which the gate drive signal Vgcl, serving as the high-level voltage signal, is supplied during the read period is the exposure period Pex.

[0154] In the eighth embodiment, the detection can be carried out quickly in the entire area of ​​the detection area AA, such that changes in the blood vessel pattern over time, such as the pulse wave, can be detected effectively.

[0155] In the first through eighth embodiments, the case is described in which the gate line drive circuit 15 performs selective time-division multiplexing of a sequential supply of the gate drive signals Vgcl to the gate lines GCL. However, the drive method is not limited to this case. The sensor 10 can perform code-division multiplexing (hereinafter referred to as "code-division multiplexing (CDM driving)") to carry out the detection. Since CDM driving and a drive circuit for it are described in Japanese patent application JP 2018-005178A, what is described in Japanese patent application JP 2018-005178A is included in the present embodiment and is not described here.

[0156] Although the preferred embodiments of the present invention have been described above, the present invention is not limited to these embodiments. The content disclosed in the embodiments is merely an example and can be modified to a greater extent than the main content of the present invention. Any modifications that are appropriately made to the extent that they do not deviate from the main content of the present invention naturally also fall within the technical scope of the present invention. Reference symbol list 1 Recognition device 10 Sensor 15 Gate line drive circuit 16 Signal line selection circuit 17 Reset circuit 21 Sensor base 22 TFT layers 23 Insulation layer 24 Thin protective layer 31 Photoelectric conversion layer 34 Anode electrode 35 Cathode electrode 48 Detection circuit 51 First light source base 52 Second light source base 61 First light source 62 Second light source 63 First filter 64 Second Filter AA detection range CA Scope GCL Gate line PAA detection sub-area PD photodiode R1 First detection area R2 Second detection area S1 First surface S2 Second Surface SGL signal line ASW selection signal Vgcl Gate control signal Tr First switching element

Claims

[1] Detection device (1) comprising the following: a sensor base (21); several photoelectric conversion elements (PD) provided and configured in a detection area (AA) of the sensor base (21) to receive incident light and to output signals corresponding to the received light; several switching elements (Tr, TrR, TrS) that are provided in the respective photoelectric conversion elements (PD); several gate lines (GCL) that are coupled to the switching elements and run in the line direction (Dx); a first light source (61) configured to emit first light having a first maximum emission wavelength; and a second light source (62) configured to emit second light having a second maximum emission wavelength, wherein the sensor base (21) has a first surface (S1) which is provided with the photoelectric conversion elements (PD) and a second surface (S2) on a side opposite the first surface (S1), the first light source (61) is positioned such that it faces the first surface (S1) in a direction perpendicular to the first surface (S1), and the second light source (62) is provided such that it is directed towards the second surface (S2) in a direction perpendicular to the second surface (S2). [2] Detection device (1) according to claim 1, further comprising: a first filter (63) arranged between the photoelectric conversion elements (PD) and the first light source (61) in a direction perpendicular to the first surface (S1) and having a first transmission band containing at least the first maximum emission wavelength; and a second filter (64) which is arranged between the second surface (S2) and the second light source (62) in a direction perpendicular to the second surface (S2) and has a second transmission band which contains at least the second maximum emission wavelength. [3] Detection device (1) comprising the following: a sensor base (21); several photoelectric conversion elements (PD) provided and configured in a detection area (AA) of the sensor base (21) to receive incident light and to output signals corresponding to the received light; several switching elements (Tr, TrR, TrS) that are provided in the respective photoelectric conversion elements (PD); several gate lines (GCL) that are coupled to the switching elements and run in the line direction (Dx); a first light source (61-1 - 61-3) configured to emit first light having a first maximum emission wavelength; and a second light source (62-1 - 62-3) configured to emit second light having a second maximum emission wavelength, wherein the sensor base (21) has a first curved surface (Sa1) which is provided with the photoelectric conversion elements (PD) and a second curved surface (Sa2) on a side opposite the first curved surface (Sa1), the detection device (1) comprises several first light sources (61-1 - 61-3) and several second light sources (62-1 - 62-3) and the first light sources (61-1 - 61-3) are facing the first curved surface (Sa1), are provided along the first curved surface (Sa1) and are configured to emit the first light in different directions, wherein the second light sources (62-1 - 62-3) are provided such that they face the second curved surface (Sa2) and are configured to emit the second light in different directions. [4] Detection device (1) according to one of claims 1 to 3, wherein the first light is visible light and the second light is infrared light. [5] Detection device (1) according to one of claims 1 to 3, which further comprises a light source base (51) which is provided with at least either the first light source (61, 61-1 - 61-3) or the second light source (62, 62-1 - 62-3).

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