Power semiconductor device and power converter device
DE112022002788B4Active Publication Date: 2026-07-09MITSUBISHI ELECTRIC CORP
Patent Information
- Application Number
- DE112022002788
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-05-18
- Filing Date
- 2022-05-18
- Publication Date
- 2026-07-09
- Estimated Expiration
- 2042-05-18
AI Technical Summary
Technical Problem
The existing semiconductor devices face issues with metal powder generation during ultrasonic welding, leading to dielectric flashover and reduced reliability due to metal powder adherence.
Method used
The power semiconductor device incorporates a conductive film with higher Vickers hardness than the conductor track structure, connected via solid-phase diffusion, to prevent direct contact and reduce metal powder generation during ultrasonic welding.
Benefits of technology
This design significantly reduces metal powder and metal chip formation, enhancing the reliability and productivity of the semiconductor device by minimizing dielectric flashover and extending the connection's lifespan.
✦ Generated by Eureka AI based on patent content.
Abstract
Power semiconductor device (1; 1b; 1c), comprising: an insulating substrate (12) comprising an insulating layer (13) and a conductor track structure (15) provided on the insulating layer (13); a power semiconductor device (20, 25) connected to the conductor track structure (15); and an electrode terminal (31) connected to the conductor track structure (15) by ultrasonic welding, the electrode terminal (31) comprising: a ribbon-shaped conductor (32) comprising an end section (32e); and a conductive film (33), the end section (32e) has a first surface (32a) which faces the conductor track structure (15), the conductive film (33) covers the first surface (32a) and is connected to the conductor track structure (15) via solid-phase diffusion, and a first Vickers hardness of the conductive film (33) is greater than a second Vickers hardness of the conductor track structure (15).
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Citation Information
Patent Citations
Semiconductor device and manufacturing method of the same
JP2017199813A
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