Semiconductor device

Abstract

One objective is to provide a semiconductor device suitable for easily switching between mounting and non-mounting the diagnostic element at the time of manufacture. A semiconductor device (100) comprises: an insulating substrate (2) having a front structure (2b) arranged on a front side and a rear structure (2c) arranged on a rear side; a semiconductor element (3) mounted on the front structure (2b); a heat radiation plate (1) which, in plan view, encompasses the insulating substrate (2) and is bonded to the rear structure (2c); a housing (7) fixed to a peripheral edge portion on the heat radiation plate (1) to accommodate the insulating substrate (2) and the semiconductor element (3); and at least one diagnostic element (9) arranged in the housing (7) to diagnose deterioration of the semiconductor element (3).The diagnostic element (9) has a terminal (9a). The terminal (9a) is not electrically connected to the semiconductor element (3).

Description

TECHNICAL AREA

[0001] The present disclosure relates to a semiconductor device. BACKGROUND TECHNOLOGY

[0002] Traditionally, a power source device is proposed that includes a built-in lifetime detection capacitor (corresponding to a diagnostic element) to detect the lifetime of a product (see, for example, patent document 1). In a technique described in patent document 1, the lifetime detection capacitor is electrically connected to an internal circuit in the product to detect the lifetime of the product based on the electrostatic capacitance of the lifetime detection capacitor. DOCUMENTS ACCORDING TO THE STATE OF THE TECHNOLOGY PATENT DOCUMENT(S)

[0003] Patent document 1: Published Japanese patent application no. 2001-327162 SUMMARY: PROBLEM TO BE SOLVED BY THE INVENTION

[0004] In the technique described in patent document 1, since the capacitor for lifetime detection is electrically connected to the internal circuit in the product as the diagnostic element, it is not easy to switch between mounting and not mounting the diagnostic element at the time of manufacture.

[0005] Accordingly, one objective of the present disclosure is to provide a semiconductor device capable of easily switching between the assembly and non-assembly of a diagnostic element at the time of manufacture. MEANS TO SOLVE THE PROBLEM

[0006] A semiconductor device according to the present disclosure comprises: an insulating substrate having a front structure arranged on a front side and a rear structure arranged on a rear side; a semiconductor element mounted on the front structure; a heat radiation plate which, in plan view, comprises the insulating substrate and is bonded to the rear structure; a housing fixed to a peripheral edge portion on the heat radiation plate to accommodate the insulating substrate and the semiconductor element; and at least one diagnostic element arranged in the housing to diagnose deterioration of the semiconductor element, wherein the diagnostic element has an external connection terminal and the external connection terminal is not electrically connected to the semiconductor element. EFFECTS OF INVENTION

[0007] According to the present disclosure, the presence or absence of the diagnostic element has no effect on a product; thus, it is easy to switch between assembling and not assembling the diagnostic element at the time of manufacture.

[0008] These and other objectives, features, aspects and advantages of the present disclosure will become more apparent from the following detailed description when it is made in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS [ Fig. Figure 1] is a cross-sectional view of a semiconductor device according to embodiment 1. [ Fig. 2] is a graphical representation showing a characteristic value of the semiconductor device according to embodiment 1 and of a diagnostic element contained in the semiconductor device. [ Fig. Figure 3] is a cross-sectional view of a semiconductor device according to embodiment 3. [ Fig. Figure 4] is a cross-sectional view of a semiconductor device according to embodiment 4. [ Fig. Figure 5] is a cross-sectional view of a semiconductor device according to embodiment 5. DESCRIPTION OF ONE (OF) FORM(S)<Ausführungsform 1>

[0009] Using the illustrations, embodiment 1 is described below. Fig. Figure 1 is a cross-sectional view of a semiconductor device 100 according to embodiment 1.

[0010] As in Fig. As illustrated in Figure 1, the semiconductor device 100 is a power module and comprises a heat radiation plate 1, an insulating substrate 2, a semiconductor element 3, a plurality of lead electrodes 4, a housing 7, a sealing resin 8, a diagnostic element 9 and a cover 12.

[0011] The insulating substrate 2 has a rectangular shape in plan view. The insulating substrate 2 comprises an insulating base component 2a, a front structure 2b located on the front side of the insulating base component 2a, and a rear structure 2c located on the back side of the insulating base component 2a. The insulating base component 2a is, for example, made of ceramic. The front structure 2b and the rear structure 2c are, for example, made of a metal such as copper.

[0012] The heat radiation plate 1 consists of, for example, a metal such as copper, and has a rectangular shape in plan view. In plan view, the heat radiation plate 1 encompasses the insulating substrate 2 and is bonded to the rear structure 2c by means of a bonding material 5. The bonding material 5 is, for example, a solder metal.

[0013] The semiconductor element 3 is mounted on the front of the insulating substrate 2. Specifically, the semiconductor element 3 is mounted on the front-facing structure 2b via the bonding material 5. The semiconductor element 3 is electrically connected to the lead electrode 4 by a metal wire 6. The number of semiconductor elements 3 is not limited to one; multiple semiconductor elements 3 can also be used.

[0014] Semiconductor element 3 is, for example, an insulated-gate bipolar transistor (IGBT) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Semiconductor element 3 may contain a freewheeling diode (FWD) that is electrically connected. Semiconductor element 3 is made of silicon or a wide-bandgap semiconductor material. Examples of wide-bandgap semiconductor materials include silicon carbide, a gallium nitride series semiconductor material, or diamond.

[0015] The housing 7 is formed in a rectangular, frame-like shape in plan view. The housing 7 is fixed to a peripheral edge portion on the heat radiation plate 1 to accommodate the insulating substrate 2 and the semiconductor element 3. The housing 7 is formed using resin and exhibits insulating properties.

[0016] The diagnostic element 9 is located on an upper part of the housing 7. Specifically, the diagnostic element 9 is positioned on a part of the housing 7 that is higher than the semiconductor element 3. The diagnostic element 9 is a component used to diagnose deterioration of the semiconductor element 3, that is, deterioration of the semiconductor device 100. A diagnosis of the deterioration of the semiconductor device 100 is described below.

[0017] The cover 12 is attached to a side higher than the diagnostic element 9 to cover an opening 7a of the housing 7. The cover 12 is formed using resin and has insulating properties similar to those of the housing 7. Two through-holes 12a and a plurality of through-holes 12b are formed in the cover 12. Two terminals 9a contained in the diagnostic element 9 protrude through two through-holes 12a to an external part. That is, the two terminals 9a of the diagnostic element 9 are external connection terminals and are not electrically connected to the semiconductor element 3. Thus, the operation of the diagnostic element 9 has no effect on the operation of the semiconductor element 3, and vice versa.Since the presence or absence of the diagnostic element 9 has no effect on the semiconductor device 100 as a product, it is easy to switch between mounting and not mounting the diagnostic element 9 at the time of manufacture.

[0018] Some end sections of the plurality of supply electrodes 4 are connected to the front structure 2b, and other end sections project through the plurality of through holes 12b formed in the cover 12 to an outer part. The sealing resin 8 is, for example, an epoxy resin and fills the housing 7.

[0019] Next, using Fig. 2 a diagnosis of deterioration of the semiconductor device 100 using the diagnostic element 9 is described. Fig. Figure 2 is a graphic representation showing a characteristic value of the semiconductor device 100 according to embodiment 1 and of the diagnostic element 9 contained in the semiconductor device 100.

[0020] A deterioration of semiconductor device 100 affects semiconductor element 3, and it can be assumed that the time of failure of semiconductor device 100 is the same as the time of failure of semiconductor element 3. Thus, when diagnosing a deterioration of semiconductor device 100, the time of failure of semiconductor element 3 is used as the time of failure of semiconductor device 100. As in Fig. As illustrated in Figure 2, the time of failure of semiconductor device 100 and the characteristic value of diagnostic element 9 are related. The characteristic value of diagnostic element 9 changes over time, for example, depending on the operating environment of semiconductor device 100 or the temperature when semiconductor device 100 is powered on. When the characteristic value of diagnostic element 9 reaches a certain value, it is recognized that semiconductor device 100 has failed. Thus, when the characteristic value of diagnostic element 9 is measured, the time of failure of semiconductor device 100, i.e., a deterioration of semiconductor device 100, can be diagnosed.

[0021] Here, a module characteristic (a characteristic of the semiconductor device 100) is in Fig. 2. An output voltage of the semiconductor device 100 and is not continuous after a failure of the semiconductor device 100. A diagnostic element characteristic in Fig. 2 is a characteristic of the diagnostic element 9 and decreases continuously and monotonically before and after a failure of the semiconductor device 100.

[0022] Although Fig. Figure 2 illustrates a case in which the characteristic value of the diagnostic element 9 decreases monotonically over time; the characteristic value of the diagnostic element 9 can also increase monotonically over time. Any component can be adopted as the diagnostic element 9, as long as its characteristic value is related to the time of a failure of the semiconductor device 100.

[0023] As a method for diagnosing deterioration of the semiconductor device 100, a module characteristic and a diagnostic element characteristic are stored in a (not shown) data server, and the stored data are used as data for mechanical learning; thus, deterioration of the semiconductor device 100 can be diagnosed from the diagnostic element characteristic. The module characteristic is obtained from shipping test data and deterioration test data of a product, as well as operational data from actual activation of the product.

[0024] As described above, the semiconductor device 100 according to embodiment 1 comprises the insulating substrate 2, which has the front structure 2b, arranged at the front, and the rear structure 2c, which is arranged at the rear; the semiconductor element 3, which is mounted on the front structure 2b; the heat radiation plate 1, which in plan view comprises the insulating substrate 2 and is bonded to the rear structure 2c; the housing 7, which is fixed to the peripheral edge portion on the heat radiation plate 1 to accommodate the insulating substrate 2 and the semiconductor element 3; and the diagnostic element 9, which is arranged in the housing 7 to diagnose deterioration of the semiconductor element 3, wherein the diagnostic element 9 has the terminal 9a and the terminal 9a is not electrically connected to the semiconductor element 3.

[0025] Since the presence or absence of the diagnostic element 9 has no effect on the semiconductor device 100 as the product, it is easy to switch between mounting and not mounting the diagnostic element 9 at the time of manufacture. <Ausführungsform 2>

[0026] Next, a semiconductor device 100 according to embodiment 2 is described. In the description in embodiment 2, the same reference numerals are assigned to the same component elements as those described in embodiment 1, and their description is omitted.

[0027] In embodiment 2, the diagnostic element 9 is an electrolytic capacitor, and the structure of the semiconductor device 100 and the time-dependent change of the characteristic value of the electrolytic capacitor are similar to the case in embodiment 1 and are thus implemented using Fig. 1 and Fig. 2 described. In the description of embodiment 2, the diagnostic element 9 is an electrolytic capacitor.

[0028] As in Fig. As illustrated in Figure 1, the electrolytic capacitor is arranged on a side of the housing 7 that is higher than the semiconductor element 3. Two terminals 9a of the electrolytic capacitor protrude through two through-holes 12a to an external part. That is, the two terminals 9a of the electrolytic capacitor are external connection points and are not electrically connected to the semiconductor element 3. Thus, the operation of the electrolytic capacitor has no effect on the operation of the semiconductor element 3, and vice versa. Since the presence or absence of the electrolytic capacitor has no effect on the semiconductor device 100 as a product, it is easy to switch between mounting and omitting the electrolytic capacitor during manufacturing.

[0029] Although not shown in the illustrations, two terminals 9a of the electrolytic capacitor are connected to a sensor for measuring the electrostatic capacitance of the electrolytic capacitor. As shown in Fig. As illustrated in Figure 2, the electrostatic capacitance of the electrolytic capacitor decreases over time, for example, depending on the operating environment of the semiconductor device 100 or the temperature when the semiconductor device 100 is driven.

[0030] A module characteristic (a characteristic of the semiconductor device 100) in Fig. 2 is here an output voltage of the semiconductor device 100 and is not continuous after a failure of the semiconductor device 100. A diagnostic element characteristic (a characteristic of the electrolytic capacitor) in Fig. 2 is an electrostatic capacitance of the electrolytic capacitor and decreases monotonically before and after a failure of the semiconductor device 100.

[0031] Since a method for diagnosing deterioration of the semiconductor device 100 is similar to that of the case in embodiment 1, the description is omitted.

[0032] As described above, in the semiconductor device 100 according to embodiment 2, the diagnostic element 9 is the electrolytic capacitor. Therefore, the presence or absence of the electrolytic capacitor has no effect on the semiconductor device 100 as a product, and the inclusion or exclusion of the electrolytic capacitor can easily be changed during manufacturing. <Ausführungsform 3>

[0033] Next, a semiconductor device 100A according to embodiment 3 is described. Fig. Figure 3 is a cross-sectional view of the semiconductor device 100A according to embodiment 3. In the description in embodiment 3, the same reference numerals are assigned to the same component elements as those described in embodiments 1 and 2, and their description is omitted.

[0034] As in Fig. As illustrated in Figure 3, in embodiment 3 the diagnostic element 9 is arranged in a surrounding part of the semiconductor element 3 on the front-facing structure 2b. Since the diagnostic element 9 is arranged close to the semiconductor element 3, a diagnostic element characteristic can be obtained that also specifically reflects the temperature of the semiconductor element 3. In embodiment 3, the diagnostic element 9 can be an electrolytic capacitor.

[0035] As described above in the semiconductor device 100A according to embodiment 3, the diagnostic element 9 is arranged in the surrounding part of the semiconductor element 3 on the front-facing structure 2b. Thus, the diagnostic element characteristic can be obtained, which further reflects the temperature of the semiconductor element 3, and an improvement in the accuracy of the deterioration diagnosis in the semiconductor device 100 can be expected. <Ausführungsform 4>

[0036] Next, a semiconductor device 100B according to embodiment 4 is described. Fig. Figure 4 is a cross-sectional view of the semiconductor device 100B according to embodiment 4. In the description in embodiment 4, the same reference numerals are assigned to the same component elements as those described in embodiments 1 to 3, and their description is omitted.

[0037] As in Fig. As illustrated in Figure 4, in embodiment 4 the semiconductor device 100B has a plurality of (for example, two) diagnostic elements 9. Two terminals 9a contained in each diagnostic element 9 are not electrically connected to the semiconductor element 3. Thus, the diagnostic element characteristic can be obtained individually for each diagnostic element 9.

[0038] Two diagnostic elements 9 can be arranged on a side of the housing 7 that is higher than the semiconductor element 3, or they can be arranged in a surrounding part of the semiconductor element 3 on the front-facing structure 2b. It is also possible that one of the two diagnostic elements 9 is arranged on a side of the housing 7 that is higher than the semiconductor element 3, and the other is arranged in a surrounding part of the semiconductor element 3 on the front-facing structure 2b.

[0039] Although in Fig. 4. If two diagnostic elements 9 are arranged, the number of diagnostic elements 9 is not limited to two. Three or more diagnostic elements 9 can also be used. In embodiment 4, the diagnostic element 9 can be an electrolytic capacitor.

[0040] As described above, the semiconductor device 100B according to embodiment 4 comprises the plurality of diagnostic elements 9, so that data can be used for mechanical learning by considering a plurality of diagnostic element characteristics. Accordingly, an improvement in the accuracy of deterioration diagnosis can be expected in the semiconductor device 100B. <Ausführungsform 5>

[0041] Next, a semiconductor device 100C according to embodiment 5 is described. Fig. Figure 5 is a cross-sectional view of the semiconductor device 100C according to embodiment 5. In the description in embodiment 5, the same reference numerals are assigned to the same component elements as those described in embodiments 1 to 4, and their description is omitted.

[0042] As in Fig.As illustrated in Figure 5, in embodiment 5 the semiconductor device 100C comprises a deformation measuring device 11 and a detection sample 10, to which the deformation measuring device 11 is attached, instead of the diagnostic element 9. The measuring device lead 11a of the deformation measuring device 11 is an external connection point, and the measuring device lead 11a protrudes through the through-hole 12a to an external part. That is, the measuring device lead 11a of the deformation measuring device 11 is not electrically connected to the semiconductor element 3. Thus, the operation of the deformation measuring device 11 has no influence on the operation of the semiconductor element 3, and vice versa.Since the presence or absence of the deformation measuring device 11 has no effect on the semiconductor device 100C as a product, it is easy to switch between mounting and not mounting the deformation measuring device 11 at the time of manufacture.

[0043] The detection probe 10 is bonded to the front-facing structure 2b by means of the bonding material 5. The detection probe 10 is preferably bonded to the surrounding part on the front-facing structure 2b in order to obtain the diagnostic element characteristic, which furthermore specifically reflects the temperature of the semiconductor element 3.

[0044] The detection sample 10 preferably consists of a material with a larger coefficient of linear expansion than that of the insulating substrate 2 in order to clearly record a thermal history. Since the detection sample 10 must also function in the event of a failure of the semiconductor device 100C, the connection or bond between the detection sample 10 and the insulating substrate 2 must exhibit a higher durability than the bond between the semiconductor element 3 and the metal wire 6 and the bond between the insulating substrate 2 and the thermal radiation plate 1. The durability between the detection sample 10 and the insulating substrate 2 can be adjusted by changing the shape and bonding area of ​​the detection sample 10.

[0045] The detection sample 10 is, for example, lengthened and contracted depending on the operating environment of the semiconductor device 100C or the temperature during activation of the semiconductor device 100C. Deformation of the detection sample 10 accumulates over time, and this accumulated deformation is measured by the deformation measuring device 11. The deformation of the detection sample 10 measured by the deformation measuring device 11 is used as a diagnostic element characteristic, and deterioration of the semiconductor device 100C is diagnosed by a method similar to that described in embodiment 1. In this case, the deformation measuring device 11 and the detection sample 10 can be arranged at a plurality of positions.

[0046] It is also possible that the detection sample 10 is not bonded to the front structure 2b, but rather that the deformation measuring device 11 is mounted directly on the front structure 2b. In this case, the deformation of the front structure 2b, measured by the deformation measuring device 11, is used as the diagnostic element characteristic. The deformation measuring device 11 can be arranged in a variety of positions.

[0047] It is also possible that the measuring device supply line 11a is not an external connection port, but that an external connection port is arranged separately and the measuring device supply line 11a is connected to the external connection port as the other component.

[0048] As described above, in the semiconductor device 100C according to embodiment 5, the diagnostic element 9 is the deformation measuring device 11 and the external connection port is connected to the measuring device lead 11a of the deformation measuring device 11.

[0049] Since the presence or absence of the deformation measuring device 11 has no effect on the semiconductor device 100C as a product, it is easy to switch between mounting and not mounting the deformation measuring device 11 at the time of manufacture.

[0050] The diagnostic element 9 comprises the detection probe 10, to which the deformation measuring device 11 is attached, the detection probe 10 is arranged on the front structure 2b, and the external connection connection is the measuring device lead 11a.

[0051] Since the deformation of the detection sample 10 is used as the diagnostic element characteristic, an improvement in the accuracy of the deterioration diagnosis in the semiconductor device 100C can be expected in comparison with the case in which the deformation of the front-side structure 2b is used as the diagnostic element characteristic.

[0052] Although the present revelation has been described in detail above, the preceding description is illustrative in all aspects and does not limit the revelation. Therefore, it is understood that numerous modifications, not listed as examples, can be conceived.

[0053] Each embodiment can be combined in any way desired, or each embodiment can be suitably varied or omitted. EXPLANATION OF THE REFERENCE SYMBOLS

[0054] 1 Heat radiation plate, 2 Insulating substrate, 2b Front structure, 2c Rear structure, 3 Semiconductor element, 7 Housing, 9 Diagnostic element, 9a Connection, 10 Detection probe, 11 Deformation measuring device, 11a Measuring device lead, 100, 100A, 100B, 100C Semiconductor device. QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] JP 2001-327162

[0003]

Claims

[1] Semiconductor device comprising: an insulating substrate comprising a front structure located on a front side and a rear structure located on a back side; a semiconductor element mounted on the front-facing structure; a heat radiation panel which, in plan view, encompasses the insulating substrate and is bonded to the rear structure; a housing that is fixed to a peripheral edge portion on the thermal radiation plate to accommodate the insulating substrate and the semiconductor element; and at least one diagnostic element arranged in the housing to diagnose deterioration of the semiconductor element, wherein the diagnostic element has an external connection port and the external connection port is not electrically connected to the semiconductor element. [2] Semiconductor device according to claim 1, wherein the diagnostic element is arranged in a surrounding part of the semiconductor element on the front-side structure. [3] Semiconductor device according to claim 1 or 2, comprising the plurality of diagnostic elements. [4] Semiconductor device according to any one of claims 1 to 3, wherein the diagnostic element is an electrolytic capacitor. [5] Semiconductor device according to any one of claims 1 to 3, wherein the diagnostic element is a deformation measuring device and The external connection port is connected to a measuring device lead of the deformation measuring device. [6] Semiconductor device according to claim 5, wherein the diagnostic element has a detection probe to which the deformation measuring device is attached, the detection probe is located on the front structure and The external connection port is the measuring device supply line.

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