OPTOELECTRONIC DEVICE AND SYSTEM FOR OPTICAL DATA TRANSMISSION

Abstract

The invention relates to an optoelectronic device, in particular a combined micro-LED (2) and a micro-detector (5), comprising a first semiconductor layer (3a) with a first section (7a) and a laterally offset second section (7b), a second semiconductor layer (3b) arranged on a first section (7a), and an active region (4) arranged between the first section (7a) and the second semiconductor layer (3b). The optoelectronic device further comprises an upper contact element (8) arranged on the second semiconductor layer (3b) and a lower contact element (6) electrically coupled to the first section (7a).The first and second semiconductor layers are doped with different conductivities, and the first section (7a), the active region (4), and the second semiconductor layer (3b) form a semiconductor layer stack configured to emit light of at least one first wavelength when a supply voltage is applied to the upper and lower contact elements (8, 6). Furthermore, the second section (7b) is configured to accommodate a detector element (5) and / or is substantially transparent to light of the first wavelength.

Description

[0001] The present application claims priority over German patent application DE 10 2023 113 466.3, filed on May 23, 2023, the disclosure of which is incorporated by reference in its entirety.

[0002] The present invention relates to an optoelectronic device, an arrangement of optoelectronic devices, and a system for optical data transmission. The present invention further relates to a method for operating an optoelectronic device and for operating a system for optical data transmission. BACKGROUND

[0003] Today's internet relies on large data centers. However, their high energy consumption poses a problem when it comes to ensuring their operation with purely sustainable energy sources. Most of the electricity is not used for computations, but for data transmission over short distances (< 10 m): from the CPU to the GPU, from server to server, from rack to rack.

[0004] Currently, short-distance data transmission is achieved either electrically, primarily via copper (Cu) or aluminum (Al) leads and cables (within the chip or motherboard), or optically by combining near-infrared (NIR) vertical surface emitter lasers (VCSELs) with optical fibers. However, the metals cause electrical power losses due to their resistivity, and the VCSELs, on the other hand, require a certain threshold current (I). th), to start the laser emission, typically in the mA range. Together with the required forward voltage, this threshold current I defines th a dissipated (electrical) power of a few mW.

[0005] To reduce power consumption for short-distance optical data transmission, efforts are underway to utilize micro-LEDs to address the problem of high power consumption. Micro-LEDs offer the advantage of operating at very low currents (1–500 µA per pixel), which are significantly lower than those of lasers such as VCSELs, and they do not require a (laser) threshold to be exceeded. Furthermore, micro-LEDs have a small footprint (< 5 µm possible) and can be integrated onto backplane wafers using common display technologies. This allows for high parallelization during micro-LED transmission, further reducing power consumption during hardware manufacturing.

[0006] The use of small optoelectronic components such as µ-LEDs for optical data transmission therefore offers significant advantages over, for example, VCSEL technology due to better scalability and lower power consumption, and saves energy, especially for data transmission over short and medium distances.

[0007] The use of small optoelectronic components such as micro-LEDs requires not only high quantum efficiency but also very fast emitter switching to enable high data rates. A limitation in this regard is the lifetime of radiative recombination, which limits the rise and fall times of light emission when modulating or switching the micro-LED on / off. This effect is particularly significant when using micro-LEDs due to their large surface-to-volume ratio.

[0008] Currently known approaches to reducing the lifetime of radiative recombination include, for example, background doping (e.g., in the QW barriers) to increase the charge carrier density for certain charge carrier types, the use of quantum dots, and / or attempts to achieve a high current density.

[0009] However, these methods can only improve the performance of optoelectronic components to a certain extent.

[0010] Therefore, one objective of the present application is to provide an optoelectronic component and a system for optical data transmission that counteracts at least some of the aforementioned disadvantages. SUMMARY OF THE INVENTION

[0011] These and other objectives are addressed by the subject matter of the independent claims. Features and further aspects of the proposed principles are set out in the dependent claims.

[0012] The core of the invention consists in providing an optoelectronic device and a system using such optoelectronic devices, with which data can be sent back and forth within a single optical fiber for optical data transmission. This can be achieved by using an integrated optoelectronic device comprising a monolithically grown micro-LED on a first section of a semiconductor layer, and by arranging a micro-detector on, above, or below a second section of the same semiconductor layer adjacent to the first section. The second section serves as a kind of placeholder for the subsequent arrangement of the micro-detector on, above, or below the second section of the semiconductor layer.Depending on the operating mode, the optoelectronic devices can be used either as emitters and / or as detectors, enabling their "universal" use. This allows the footprint of such a system to be reduced.

[0013] The basic concept is to provide an integrated optoelectronic device with an emitting section and a detecting section, wherein the emitting section is grown monolithically as a semiconductor layer stack, and the detector section is provided at least at the wafer level, namely in the form of a connection surface or in the form of a window formed by one of the semiconductor layers of the semiconductor layer stack. This allows a separate detector to subsequently be placed precisely where it was intended, together with the semiconductor layer stack, resulting in a combined and integrated micro-LED and micro-detector.

[0014] In a first aspect, an optoelectronic device, in particular a combined micro-LED and a micro-detector, is provided. The optoelectronic device comprises a continuous first semiconductor layer with a first section and a laterally offset second section, a second semiconductor layer arranged on the first section, and an active region arranged between the first section and the second semiconductor layer. The optoelectronic device further comprises an upper contact element arranged on the second semiconductor layer and a lower contact element electrically coupled to the first section.The first and second semiconductor layers are doped with different conductivities, and the first section, the active region, and the second semiconductor layer form a semiconductor stack configured to emit light of at least one wavelength when a supply voltage is applied to the upper and lower contact elements. Thus, the semiconductor stack consisting of the first section, the active region, and the second semiconductor layer forms an emitter section of the optoelectronic device. The second section, on the other hand, is configured to accommodate a separate detector element and / or is substantially transparent to light of the first wavelength or a second wavelength to be detected, in order to transmit light of the first or second wavelength to a detector element located below the second section.The second section, together with a separate detector element, thus forms a detector section of the optoelectronic device.

[0015] In some aspects, the optoelectronic device is a combined micro-LED and micro-detector. Such a combined micro-LED and micro-detector can, in particular, be a device with edge lengths of less than 100 µm, less than 50 µm, less than 20 µm, less than 10 µm, or less than 5 µm, configured to emit and detect light of a desired wavelength.

[0016] The semiconductor layer stack can have any shape, for example, a truncated pyramid with angled sides or a truncated cylindrical shape with angled sides. Such angled sides can result, for example, from a mesa etching process. However, these exemplary embodiments are not to be understood as limiting, but merely as possible embodiments. Other arrangements, shapes, and cross-sections are also possible.

[0017] In some aspects, the second layer and the active region are removed to form the second part of the first semiconductor layer. This second section is then free of / not covered by the active region and the second semiconductor layer. For example, the first semiconductor layer, the second semiconductor layer, and the active region between the first and second semiconductor layers can be grown over a large area and then removed again in the areas that form the first and second sections. However, it is also conceivable to grow the second semiconductor layer and the active region only on the first section of the first semiconductor layer, but not on the second section.

[0018] In some aspects, the optoelectronic device further comprises a detector element arranged on the second section, and in particular on a projection of the first semiconductor layer forming the second section. The second section specifically includes a projection of the first semiconductor layer on which the detector element, such as a photodetector, is arranged. A gap or recess may be formed in the first semiconductor layer between the layer stack and the projection, such that the first section and the second section, or the emitter section and the detector section, are spaced apart from each other.

[0019] In some aspects, a short-period superlattice layer (SPSL) is positioned between the first semiconductor layer and the active region and / or between the first semiconductor layer and the detector element, or is part of the detector element itself. Such a layer can reduce voltages between the first semiconductor layer and an adjacent layer / component.

[0020] In some embodiments, the optoelectronic device further comprises a support substrate, in particular a CMOS backplane. The support substrate is arranged above the first semiconductor layer or on the second semiconductor layer and is electrically coupled to the upper and / or lower contact element. The support substrate may, for example, comprise a supply circuit that is in electrical contact with the upper and / or lower contact element as well as with the detector element. The support substrate may, for example, be in the form of a CMOS element or a portion of a CMOS wafer.

[0021] In some aspects, the substrate is connected to extensions of the lower and / or upper contact element, or directly to the lower or upper contact element. However, the substrate can also be monolithically integrated with the first semiconductor layer, the semiconductor layer stack, and the contact elements. It is also conceivable that the optoelectronic device does not include a substrate and is subsequently mounted onto a suitable substrate.

[0022] In some aspects, a detector element is arranged on the support substrate next to the second section such that the detector element is positioned between the support substrate and the second section. In such a case, the second section is specifically designed as a window or opening configured to allow light of at least the first wavelength or a second wavelength incident on the second section to pass through to the detector element below the second section.

[0023] In some aspects, the detector element is configured to detect light of the first wavelength or a second wavelength incident upon it. The detector element can be, for example, a high-speed detector, a photodiode, an avalanche photodiode (APD), or a metal-semiconductor-metal (MSM) photodetector. Together with the second section of the first semiconductor layer, the detector element forms a detector section of the optoelectronic device.

[0024] In some aspects, the optoelectronic device further includes vias through the second section of the first semiconductor layer to provide contact elements for electrical contact with a detector element arranged on the second section. Thus, the detector element can be electrically contacted via the vias from the other side of the first semiconductor layer, namely the side facing away from the detector element.

[0025] At least one of the upper or lower contact elements can be substantially transparent to light of the first wavelength, for example. In particular, the upper or lower contact element can form a light-emitting region of the optoelectronic device through which light generated in the active region is coupled out of the optoelectronic device. Such a substantially transparent contact element can be formed, for example, from a transparent conductive oxide (TCO) such as indium tin oxide (ITO). The light-emitting region can be formed either by the upper contact element or the lower contact element itself, or by other structures / elements as described later herein.

[0026] In some aspects, the upper and lower contact elements, which are essentially opaque, can include a reflective material layer covering the underlying first and second semiconductor layers. In the case of the upper contact element, the reflective material layer can cover the second semiconductor layer opposite the active region, or in the case of the lower contact element, the reflective material layer can cover the first part of the semiconductor layer opposite the active region. This allows for directed emission of the generated light towards the light-emitting region and more efficient extraction of the generated light by the light-emitting region.

[0027] In some aspects, the first semiconductor layer is essentially transparent to light of the first wavelength, at least in the second section. The second section can, in particular, form a window / light-incidence region of the optoelectronic device so that light incident on the second section can be detected by an underlying detector element. However, the second section can also include an opening through the first semiconductor layer, which is optionally filled with a filler material, particularly a transparent one. In such a case, the opening or the optional filler material can form a light-incidence region of the optoelectronic device so that light incident on the second section can be detected by an underlying detector element.

[0028] In some aspects, the optoelectronic device further comprises an optical barrier arranged on the first semiconductor layer between the first section and the second section, wherein the optical barrier prevents the direct emission of light of at least the first wavelength from the active region towards the detector element. The optical barrier can therefore, for example, be reflective or absorbing for light of the first wavelength and have a height such that it extends from the first semiconductor layer beyond the semiconductor layer stack or has a height at least equal to it.

[0029] In some aspects, the optoelectronic device further comprises an output coupling structure on the upper contact element and / or the second semiconductor layer opposite the first semiconductor layer, or an output coupling structure on the lower contact element and / or the first semiconductor layer opposite the second semiconductor layer. The output coupling structure forms, for example, a light-emitting region of the optoelectronic device. The output coupling structure can, for instance, be a surface roughening of the upper or lower contact element. In this way, the output coupling of light from the optoelectronic device can be improved, as can the directional dependence of the output light. Additionally, this can improve the coupling of light into an adjacent optical fiber.

[0030] In some aspects, the optoelectronic device further includes an optical element on the upper contact element and / or the second semiconductor layer opposite the first semiconductor layer, or on the lower contact element and / or the first semiconductor layer opposite the second semiconductor layer. The optical element can be, for example, a microlens or a photonic structure. This improves the extraction of light from the optoelectronic device, as well as the directional dependence of the extracted light. Furthermore, it improves the coupling of light into an adjacent optical fiber.

[0031] In some aspects, the optoelectronic device comprises a plurality of emitter sections and a detector section, with each emitter section comprising a portion of the active region and the second layer. The emitter sections can be separated from each other, for example, by a slit. This allows redundancy between the emitters to be achieved in case one or more emitter sections fail.

[0032] In some aspects, optoelectronic devices according to the proposed principle can be processed as individual elements that can, for example, be transfer-printed or transferred onto a substrate. However, in other aspects, optoelectronic devices according to the proposed principle can also be processed as an array / plurality of optoelectronic devices arranged adjacent to one another on a substrate, forming an assembly.

[0033] In another aspect, an arrangement is provided that comprises a support substrate and a plurality of optoelectronic devices, arranged adjacent to each other on a common support substrate, according to some aspects of the proposed principle. In some aspects, the optoelectronic devices of the arrangement are arranged in a row-column configuration.

[0034] The integration of emitters and detectors into a combined optoelectronic device, as described above, enables the fabrication of a compact and well-aligned array of optoelectronic devices. Furthermore, very short connections to a substrate, such as a CMOS driver, can be achieved through the use of vias for vertical stacking.

[0035] In another aspect, a system for optical data transmission is provided, comprising a first arrangement of optoelectronic devices and a second arrangement of optoelectronic devices. The optoelectronic devices of the first arrangement are optically coupled to a corresponding optoelectronic component of the second arrangement to transmit optical data. Each optoelectronic device of the first and second arrangements comprises an emitter and a detector section, enabling data to be transmitted back and forth between the two arrangements via a single optical path. At least one of the first and second arrangements is an arrangement according to some of the aspects mentioned above.

[0036] In some aspects, the optoelectronic devices of the first arrangement are configured to emit light of a first wavelength, and the optoelectronic devices of the second arrangement are configured to detect the first-wavelength light emitted by the respective optoelectronic device of the first arrangement. Thus, the first arrangement is configured to transmit optical data, and the second arrangement is configured to detect optical data. Furthermore, the optoelectronic devices of the second arrangement are configured to emit light of a second wavelength, and the optoelectronic devices of the first arrangement are configured to detect the second-wavelength light emitted by the respective optoelectronic device of the second arrangement.Thus, the second arrangement is also configured to transmit optical data, and the first arrangement is configured to detect optical data. For optical data transmission, only one arrangement is configured to send and receive optical data on each side of the communicating objects, and communication between the communicating objects is achieved by sending and receiving data at different times, or, if the first and second wavelengths are different, by sending and receiving data with different wavelengths simultaneously.The optoelectronic devices of the first arrangement are therefore configured, for example, to emit light of a first wavelength at a first time, and the optoelectronic devices of the second arrangement are configured to detect the light of the first wavelength emitted by the respective optoelectronic device of the first arrangement at the first time. Additionally, the optoelectronic devices of the second arrangement are configured to emit light of the second wavelength at a second time, and the optoelectronic devices of the first arrangement are configured to detect the light of the second wavelength emitted by the respective optoelectronic device of the second arrangement at the second time. However, it is also possible to transmit and detect light of different wavelengths simultaneously in both directions.

[0037] In some aspects, the first and second wavelengths are essentially the same, so the first and second arrangements comprise essentially the same optoelectronic devices. However, in some aspects, the first and second wavelengths differ. In the latter case, a filter for the first wavelength can be placed over each detector section of the optoelectronic devices in the first arrangement, and a filter for the second wavelength can be placed over each detector section of the optoelectronic devices in the second arrangement. The filter for the first wavelength can be configured to transmit light of the second wavelength but block light of the first wavelength, and the filter for the second wavelength can be configured to transmit light of the first wavelength but block light of the second wavelength.

[0038] In another aspect, a procedure for operating a system according to some aspects of the proposed principle is provided. The procedure comprises the following steps: Emitting light of a first wavelength by means of a first optoelectronic device of the first arrangement; Coupling the light of the first wavelength into a first optical fiber; Transmission of the light of the first wavelength to a corresponding first optoelectronic device of the second arrangement; Coupling of the light of the first wavelength into the first optoelectronic device of the second arrangement; and Detection of the light of the first wavelength using the first optoelectronic device of the second arrangement.

[0039] In some aspects, the procedure also includes the following steps: Emitting light of a second wavelength by means of the first optoelectronic device of the second arrangement; Coupling the light of the second wavelength into the first optical fiber; Transmission of the light of the second wavelength to the first optoelectronic device of the first arrangement; Coupling the light of the second wavelength into the first optoelectronic device of the first arrangement; and Detection of the light of the second wavelength using the first optoelectronic device of the first arrangement. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Further aspects and embodiments according to the proposed principle will become clear with reference to the various embodiments and examples, which are described in detail in connection with the accompanying drawings, in which Fig. 1A and Fig. 1B each show a side view of an embodiment of an optoelectronic device according to some aspects of the proposed principle; Fig. 2A and Fig. 2B each show a side view of further embodiments of an optoelectronic device according to some aspects of the proposed principle; Fig. 3A and Fig. 3B each show a side view of further embodiments of an optoelectronic device according to some aspects of the proposed principle; Fig. 4 shows a top view of another embodiment of an optoelectronic device according to some aspects of the proposed principle; Fig. Figure 5 shows a side view of an embodiment of an optoelectronic arrangement according to some aspects of the proposed principle; Fig. 6 shows an embodiment of a system for optical data transmission according to some aspects of the proposed principle; and Fig. Figure 7 shows another embodiment of a system for optical data transmission according to some aspects of the proposed principle. DETAILED DESCRIPTION

[0041] The following embodiments and examples reveal various aspects and their combinations according to the proposed principle. The embodiments and examples are not always to scale. Likewise, various elements may be enlarged or reduced to highlight individual aspects. It is understood that the individual aspects of the embodiments and examples shown in the figures can be combined without contradicting the principle of the invention. Some aspects have a regular structure or shape. It should be noted that in practice, minor differences and deviations from the ideal form may occur without contradicting the inventive concept.

[0042] Furthermore, the individual figures and aspects are not necessarily depicted in the correct size, nor do the proportions between the individual elements need to be essentially accurate. Some aspects are emphasized through magnification. However, terms such as "above," "over," "below," "under," "larger," "smaller," and the like are correctly represented in relation to the elements within the figures. Thus, it is possible to deduce such relationships between the elements based on the figures.

[0043] Fig. Figure 1A shows a first embodiment of an optoelectronic device 1 according to some aspects of the proposed principle. The optoelectronic device 1 comprises a first semiconductor layer 3a with a first section 7a and a laterally offset second section 7b, which are separated from each other by a small gap 11. On the first section 7a, a second semiconductor layer 3b and an active region 4 between the first section 7a and the second semiconductor layer 3b are arranged together, thereby forming a semiconductor layer stack 2.The first and second semiconductor layers 3a, 3b have doping of different conductivities, so that the semiconductor layer stack 2 together with the active region 4 and an upper contact element 8 arranged on the second semiconductor layer 3b and a lower contact element 6 electrically coupled to the first section 7a is configured such that when a supply voltage is applied to the upper and lower contact elements 8, 6 it emits light with at least a first wavelength.

[0044] Furthermore, the second section 7b is configured to accommodate a detector element 5, which is positioned on a projection of the first semiconductor layer 3a that forms the second section 7b. The detector element and the semiconductor layer stack 2 are electrically connected to a support substrate 13 in the form of a CMOS backplane via the lower contact element 6 and the contact pads 15 located on the first semiconductor layer 3a opposite the second section 7b. The upper contact element 8 can be connected to the backplane, for example, via a via through-hole through the first semiconductor layer 3a or b, by means of a connection extending from the upper contact element 8 to the support substrate 13.Additionally, the optoelectronic device 1 can include vias (not shown) through the second section 7b to establish an electrical connection between the contact surfaces 15 and the detector element 5. The emitter, as well as the detector sections 9 and 10, and thus the optoelectronic device 1, can be controlled by means of the support substrate 13.

[0045] During the epitaxial growth of the semiconductor layer stack 2, the second section 7b of the first semiconductor layer 3a can be provided in particular to allow the detector element 5 to be arranged later as an integral part of the optoelectronic device 1 on the second section 7b. This allows a very complex and space-saving integrated component to be provided, which can be used, for example, as an optoelectronic device 1 for data transmission.

[0046] Fig. Figure 1B shows an embodiment of an optoelectronic device 1, in which, compared to the one in Fig. As shown in Figure 1A, the support substrate 13 is arranged on the side opposite the detector element 5 and the semiconductor layer stack 2. In this case, the support substrate 13 is directly connected to the upper contact element 8 and an extension of the lower contact element 6, as well as to contact surfaces 15 that are arranged directly on the detector element 5. For the light generated within the semiconductor layer stack 2 to be emitted from the optoelectronic device 1, the first semiconductor layer 3a, and in particular the first section 7a, must be substantially transparent, at least to the light generated within the semiconductor layer stack 2. The same applies to the detector section 10. Therefore, the first semiconductor layer 3a, and in particular the second section 7b, must be substantially transparent, at least to the light to be detected by the detector element 5.

[0047] The Fig. 2A and Fig. Figures 2B each show an embodiment of an optoelectronic device 1, in which, compared to the ones in the Fig. 1A and Fig. In the embodiments shown in Figure 1B, the detector element is not arranged on the first semiconductor layer 3a, but on or integrated into the support substrate 13. In this case, the second section 7b of the first semiconductor layer 3a functions as a substantially transparent window or opening 12 for the detector element arranged above the detector element 5, the detector element 5 being located between the second section 7b and the support substrate 13.

[0048] In the embodiment of Fig. In section 2A, the second section 7b of the first semiconductor layer 3a includes an opening 12 through which light falls onto the detector element 5 to be detected. The first semiconductor layer 3a can therefore already be provided at the wafer level to encompass the opening 12, in or below which the detector element 5 will be arranged at a later time. The opening 12 can then, or already at the wafer level, be filled with a transparent filler material.

[0049] In Fig. In contrast, section 2B comprises a transparent window in the second section, wherein the transparent window is formed from the material of the first semiconductor layer 3a, which is essentially transparent to the light to be detected by the detector element 5. To maintain the correct distance between the second section 7b and the detector element 5 and to increase the light detection efficiency of the optoelectronic device 1, an optical barrier 17 is arranged between the semiconductor layer stack 2 and the detector element 5, surrounding the detector element 5 in the circumferential direction. The optical barrier 17 is attached to the first semiconductor layer 3a and the support substrate 13 and is specifically positioned between the first and second sections 7a, 7b to allow direct light emission from the semiconductor layer arrangement 2 to the detector element 5.

[0050] The in the Fig. 3A and Fig. The embodiments shown in 3B include, in addition to those shown in the Fig. 1A and Fig. In the embodiments shown in Figure 1B, a short-period superlattice layer (SPSL) 16 is arranged between the first semiconductor layer 3a and the active region 4, as well as between the first semiconductor layer 3a and the detector element 5. Such a layer reduces the epitaxial stresses between the first semiconductor layer and an adjacent layer / component. Furthermore, the detector element 5 is configured as a lateral detector, for example, a metal-insulator-semiconductor (MIS) lateral detector. This allows the detector element 5 to be fabricated in a simplified manufacturing process, since the semiconductor layers are already present and contact surfaces for electrical contacting the detector element can be grown together with one of the steps already required for growing the contact elements of the emitter region.SPSL can be based, for example, on Ga(In)N / InGaN layers with an indium content of, for example, < 20 atomic percent, with a periodicity of, for example, 2 nm to 10 nm and a total thickness of, for example, 20 nm to 500 nm.

[0051] Fig. Figure 4 shows an exemplary top view of the embodiment of the optoelectronic device 1. The optoelectronic device 1 comprises four emitter sections 9 in a "corner" of the optoelectronic device 1, each separated from the others by gaps 11, and a detector section 10 extending along the opposite sides of the "corner" of the optoelectronic device 1. This allows redundancy between the emitter sections 9 to be achieved in case one or more emitter sections fail. However, the number, design, and arrangement of the emitter sections 9 shown are only examples and can vary.

[0052] For example, the area ratio between emitter and detector sections of an optoelectronic device can range from detector (D) to emitter (E) = (100x100 / 1x1) = 10000 down to D / E = (20x20 / 2x2) = 100 or even down to D / E = 10 as a lower limit, where the numbers (YxY / ZxZ) represent exemplary values ​​for the surface area of ​​the emitter and detector sections in µm.

[0053] Fig. Figure 5 shows an arrangement 20 according to some aspects of the proposed principle. The arrangement comprises a plurality of optoelectronic devices 1, as shown in Fig. Figure 1A shows two optoelectronic components 1 arranged side by side on a common support substrate 13. In the illustrated embodiment, two optoelectronic components 1 are arranged on the common support substrate by way of example, although the number two is only to be understood as exemplary. For example, several optoelectronic components 1 can be arranged in a row and column configuration on the common support substrate 13. The common support substrate can, for example, be a CMOS wafer that provides the power supply circuitry required for the operation of the optoelectronic components 1.

[0054] An exemplary procedure for manufacturing such an arrangement 20 may, for example, include the following steps: • Providing the lower contact elements 6; • Provision of the first semiconductor layer 3a; • Provisioning of active area 4; • Provision of the second semiconductor layer 3b; • Structuring the semiconductor layer stack to accommodate the emitter sections 9 / first sections 7a and the detector sections 10 / second sections 7b; • Providing the upper contact element 8 on the second semiconductor layer 3b; • Provision of the detector elements on the second sections 7b; • Connecting the carrier substrate to the lower contact elements 6.

[0055] However, the aforementioned steps are to be understood as examples and may vary in their order and / or several steps may be omitted / are optional.

[0056] Fig. Figure 6 shows a first embodiment of a system 30 for optical data transmission according to some aspects of the proposed principle. The system 30 comprises a first arrangement 20a of optoelectronic devices 1, a second arrangement 20b of optoelectronic devices 1, and a multicore fiber that optically couples the first and second arrangements. The optoelectronic devices 1 of the first arrangement 20a are optically coupled to a corresponding optoelectronic device 1 of the second arrangement 20b via an optical fiber 31 of the multicore fiber. Since the optoelectronic devices are configured to both emit and detect light of a desired wavelength, only one arrangement of optoelectronic devices is required on each side of the communicating objects, and the system 30 can provide two-way communication.

[0057] Fig.Figure 7 shows another view of a system 30 for optical data transmission according to some aspects of the proposed principle. In the system 30, optoelectronic devices 1 are arranged together on a support substrate 13, each comprising an emitter and a detector section 9, 10. Each optoelectronic device is optically coupled to only one optical fiber 31. A wavelength filter 14 is arranged over each of the detector sections 10 of the optoelectronic devices 1, which transmits at least the light emitted by the emitter section 9 of the opposite optoelectronic device 1. This ensures that only light of the respective wavelength is transmitted to the detector element of the respective optoelectronic device. REFERENCE MARK LIST 1 optoelectronic device 2 Semiconductor layer stacks 3a, 3b Semiconductor layer 4 active areas 5 Detector element 6 lower contact element Sections 7a and 7b 8 upper contact element 9 Emitter section 10 Detector section 11 column 12 Opening 13 Carrier substrate 14 filters 15 contact pads 16 SPSL layer 17 optical barriers 20, 20a, 20b order 30 System 31 fiber QUOTES INCLUDED IN THE DESCRIPTION

[0000] This list of documents cited by the applicant was automatically generated and is included solely for the reader's convenience. The list is not part of the German patent or utility model application. The DPMA accepts no liability for any errors or omissions. Cited patent literature

[0000] DE 10 2023 113 466.3

[0001]

Claims

[1] Optoelectronic device (1), in particular a combined µ-LED and µ-detector, comprising: a continuous first semiconductor layer (3a) with a first section (7a) and a laterally offset second section (7b); a second semiconductor layer (3b) arranged on top of the first section (7a); an active region (4) located between the first section (7a) and the second semiconductor layer (3b); an upper contact element (8) arranged on the second semiconductor layer (3b); and a lower contact element (6) which is electrically connected to the first section (7a); wherein the first and second semiconductor layers (3a, 3b) have doping of different conductivity types; wherein the first section (7a), the active region (4) and the second semiconductor layer (3b) form a semiconductor layer stack (2) configured to emit light of at least one first wavelength when a supply voltage is applied to the upper and lower contact elements (8, 6); and wherein the second section (7b) is configured to accommodate a separate detector element (5) and / or is essentially transparent to light of the first wavelength. [2] Optoelectronic device according to claim 1, wherein the second layer (3b) and the active area (4) are removed above the second section (7b). [3] Optoelectronic device according to claim 1 or 2, further comprising a detector element (5) arranged on the second section (7b) and in particular on a projection of the first semiconductor layer (3a) forming the second section (7b). [4] Optoelectronic device according to any one of claims 1 to 3, wherein an SPSL layer (16) is arranged between the first semiconductor layer (3a) and the active area (4) and / or between the first semiconductor layer (3a) and the detector element (5) or is part of the detector element (5). [5] Optoelectronic device according to one of claims 1 to 4, further comprising a support substrate (13), in particular a CMOS backplane, wherein the support substrate (13) is electrically coupled to the upper and / or lower contact element (8, 6). [6] Optoelectronic device according to claim 5, wherein a detector element (5) is arranged on the support substrate (13) adjacent to the second section (7b), in particular between the support substrate (13) and the second section (7b). [7] Optoelectronic device according to any one of claims 1 to 6, wherein the upper or lower contact element (8, 6) is substantially transparent to light of the first wavelength. [8] Optoelectronic device according to any one of claims 1 to 7, wherein the first semiconductor layer (3a) is substantially transparent to light of the first wavelength. [9] Optoelectronic device according to any one of claims 1 to 8, wherein the second section (7b) comprises an opening through the first semiconductor layer (3a) which is optionally filled with a particularly transparent filler material (14). [10] Optoelectronic device according to any one of claims 1 to 8, further comprising an optical barrier (17) arranged on the first semiconductor layer (3a) between the first section (7a) and the second section (7b), wherein the optical barrier (17) prevents direct emission of light of the first wavelength from the semiconductor layer stack (2) in the direction of the detector element (5). [11] Optoelectronic device according to any one of claims 1 to 10, further comprising an output coupling structure on the semiconductor layer stack (2). [12] Optoelectronic device according to any one of claims 1 to 11, further comprising an optical element on the semiconductor layer stack (2), in particular a µ-lens or a photonic structure. [13] Optoelectronic device according to one of claims 1 to 12, wherein the carrier substrate (13) comprises a supply circuit which is in electrical contact with the upper and lower contact element (6, 8) and in particular with the detector element (5). [14] Optoelectronic device according to any one of claims 1 to 13, further comprising contact vias through the second section (7b) to provide contact elements for electrically contacting a detector element (5) arranged on the second section (7b). [15] Optoelectronic device according to any one of claims 1 to 14, wherein the detector element (5) is configured to detect the light of the first wavelength, and in particular is a high-speed detector. [16] Arrangement (20) comprising a plurality of optoelectronic devices (1) according to any one of claims 1 to 15, arranged side by side on a common support substrate (13). [17] Arrangement according to claim 16, wherein the optoelectronic devices (1) are arranged in rows and columns. [18] Arrangement according to claim 16 or 17, wherein the optoelectronic devices (1) are optically isolated from each other. [19] System (30) for optical data transmission, comprising a first arrangement (20a) of optoelectronic devices (1) and a second arrangement (20b) of optoelectronic devices (1), wherein the optoelectronic devices (1) of the first arrangement (20a) are optically coupled to a respective optoelectronic device (1) of the second arrangement (20b), wherein each optoelectronic device (1) of the first and the second arrangement (20b) comprises an emitter and a detector section, and wherein at least one of the first and the second arrangement (20a, 20b) is an arrangement according to any one of claims 16 to 18. [20] System according to claim 19, wherein the optoelectronic devices (1) of the first arrangement (20a) are configured to emit light of a first wavelength, and wherein the optoelectronic devices (1) of the second arrangement (20b) are configured to detect the light of the first wavelength emitted by the respective optoelectronic device (1) of the first arrangement (20a), and wherein the optoelectronic devices (1) of the second arrangement (20a) are configured to emit light of a second wavelength, and wherein the optoelectronic devices (1) of the first arrangement (20b) are configured to detect the light of the second wavelength emitted by the respective optoelectronic device (1) of the second arrangement (20a). [21] System according to claim 20, wherein the first and the second wavelength are different from each other. [22] System according to claim 21, wherein a first wavelength filter (14) is arranged above each detector section (10) of the optoelectronic devices (1) of the first arrangement (20a) and wherein a second wavelength filter (14) is arranged above each detector section (10) of the optoelectronic devices (1) of the second arrangement (20b), and wherein the first wavelength filter (14) is configured to transmit light of the second wavelength but blocks light of the first wavelength, and wherein the second wavelength filter (14) is configured to transmit light of the first wavelength but blocks light of the second wavelength. [23] Method for operating a system (30) according to any one of claims 19 to 22, comprising the following steps: Emitting light of a first wavelength by means of a first optoelectronic device (1) of the first arrangement (20a); Coupling the light of the first wavelength into a first optical fiber (31); Transfer of the light of the first wavelength to a corresponding first optoelectronic device (1) of the second arrangement (20b); Coupling the light of the first wavelength into the first optoelectronic device (1) of the second arrangement (20b); and Detection of the light of the first wavelength by means of the first optoelectronic device (1) of the second arrangement (20b). [24] The method of claim 23, further comprising the following steps: Emitting light of a second wavelength by means of the first optoelectronic device (1) of the second arrangement (20b); Coupling of the light of the second wavelength into the first optical fiber (31); Transmission of the light of the second wavelength to the first optoelectronic device (1) of the first arrangement (20a); Coupling the light of the second wavelength into the first optoelectronic device (1) of the first arrangement (20a); and Detection of the light of the second wavelength by means of the first optoelectronic device (1) of the first arrangement (20a).

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