Light-emitting substrate and method for producing the same, light-emitting device

Abstract

The embodiments of the present disclosure provide a light-emitting substrate, a method for producing the same, and a light-emitting device, relating to the field of display technology, and serve to solve the problem that residual layers formed by quantum dot phosphor materials can cause color mixing. A light-emitting substrate comprises a base substrate and several light-emitting components, each of which comprises a first electrode, a second electrode, and a light-emitting pattern. The several light-emitting components include at least one first light-emitting component, each of which comprises a first light-emitting pattern, a first charge carrier transport layer, and a first charge carrier injection layer.which are provided between the base substrate and the first light-emitting pattern, wherein the material of the first light-emitting pattern comprises a first cross-linked light-emitting material; the material of the first charge carrier transport layer comprises a first cross-linked charge carrier transport material; and the material of the first charge carrier injection layer comprises a first cross-linked charge carrier injection material. The above-mentioned light-emitting substrate is used in a light-emitting device.

Description

[0001] The present application claims priority over a Chinese patent application filed on June 25, 2023, under application number 202310754262.6, the entire contents of which are incorporated herein by reference. TECHNICAL AREA

[0002] The present disclosure relates to the field of display technology, in particular to a light-emitting substrate and a method for producing the same, as well as a light-emitting device. STATE OF THE ART

[0003] As novel luminescent materials, quantum dots (QDs) offer advantages such as high color purity, high quantum efficiency, adjustable color temperature, and long lifespan, and have become a research hotspot for current novel LED (light-emitting diode) luminescent materials. Therefore, quantum dot light-emitting diodes (QLEDs) with quantum dot material as the light-emitting layer have become the main research focus for current novel display devices. REVELATION OF THE INVENTION

[0004] In one aspect, a light-emitting substrate is provided, comprising a base substrate and several light-emitting devices that are provided on the base substrate and arranged sequentially along a first direction, the first direction being parallel to a plane in which the base substrate is located, each of the several light-emitting devices comprising a first electrode, a second electrode, and a light-emitting pattern provided between the first electrode and the second electrode; the several light-emitting devices comprising at least one first light-emitting device, each of the at least one first light-emitting device comprising a first light-emitting pattern and a first charge carrier transport layer as well as a first charge carrier injection layer provided between the base substrate and the first light-emitting pattern;wherein the first charge carrier transport layer is closer to the first light-emitting pattern than the first charge carrier injection layer; wherein the material of the first light-emitting pattern comprises a first cross-linked light-emitting material; the material of the first charge carrier transport layer comprises a first cross-linked charge carrier transport material; and the material of the first charge carrier injection layer comprises a first cross-linked charge carrier injection material.

[0005] In some embodiments, the multiple light-emitting components further comprise at least one second light-emitting component; wherein each of the at least one second light-emitting component comprises a second light-emitting pattern and a second sacrificial layer group provided between the base substrate and the second light-emitting pattern, wherein the second sacrificial layer group comprises a second charge carrier transport layer; wherein the material of the second light-emitting pattern comprises a second cross-linked light-emitting material; and the material of the second charge carrier transport layer comprises a second cross-linked charge carrier transport material.

[0006] In some embodiments, the second sacrificial layer group further comprises a second charge carrier injection layer; wherein the second charge carrier injection layer is located on a side of the second charge carrier transport layer facing the base substrate, and the material of the second charge carrier injection layer comprises a second cross-linked charge carrier injection material.

[0007] In some embodiments, the multiple light-emitting components further comprise at least one third light-emitting component; wherein each of the at least one third light-emitting component comprises a third light-emitting pattern and a third sacrificial layer group provided between the base substrate and the third light-emitting pattern, wherein the third sacrificial layer group comprises a third charge carrier transport layer; wherein the material of the third light-emitting pattern comprises a third cross-linked light-emitting material; and the material of the third charge carrier transport layer comprises a third cross-linked charge carrier transport material.

[0008] In some embodiments, the third sacrificial layer group further comprises a third charge carrier injection layer; wherein the third charge carrier injection layer is located on a side of the third charge carrier transport layer facing the base substrate, and the material of the third charge carrier injection layer comprises a third cross-linked charge carrier injection material.

[0009] In some embodiments, the first crosslinked light-emitting material is generated by crosslinking a first quantum dot material under light radiation, wherein the solubility of the first quantum dot material in a first solvent is greater than the solubility of the first crosslinked light-emitting material in the first solvent; or the first crosslinked light-emitting material is generated by crosslinking a first quantum dot material and a first photosensitive material under light radiation, wherein the solubility of the first quantum dot material and the first photosensitive material in a first solvent is greater than the solubility of the first crosslinked light-emitting material in the first solvent.

[0010] The first crosslinked charge carrier transport material is generated by crosslinking a first charge carrier transport material under light radiation, wherein the solubility of the first charge carrier transport material in a second solvent is greater than the solubility of the first crosslinked charge carrier transport material in the second solvent; or the first crosslinked charge carrier transport material is generated by crosslinking a first charge carrier transport material and a second photosensitive material under light radiation, wherein the solubility of the first charge carrier transport material and the second photosensitive material in a second solvent is greater than the solubility of the first crosslinked charge carrier transport material in the second solvent.

[0011] The first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material under light radiation, wherein the solubility of the first charge carrier injection material in a third solvent is greater than the solubility of the first crosslinked charge carrier injection material in the third solvent; or the first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material and a third photosensitive material under light radiation, wherein the solubility of the first charge carrier injection material and the third photosensitive material in a third solvent is greater than the solubility of the first crosslinked charge carrier injection material in the third solvent.

[0012] In some embodiments, the second crosslinked light-emitting material is generated by crosslinking a second quantum dot material under light radiation, wherein the solubility of the second quantum dot material in a fourth solvent is greater than the solubility of the second crosslinked light-emitting material in the fourth solvent; or the second crosslinked light-emitting material is generated by crosslinking a second quantum dot material and a fourth photosensitive material under light radiation, wherein the solubility of the second quantum dot material and the fourth photosensitive material in a fourth solvent is greater than the solubility of the second crosslinked light-emitting material in the fourth solvent.

[0013] The second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material under light radiation, wherein the solubility of the second charge carrier transport material in a fifth solvent is greater than the solubility of the second crosslinked charge carrier transport material in the fifth solvent; or the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material and a fifth photosensitive material under light radiation, wherein the solubility of the second charge carrier transport material and the fifth photosensitive material in a fifth solvent is greater than the solubility of the second crosslinked charge carrier transport material in the fifth solvent.

[0014] In some embodiments, the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material under light radiation, wherein the solubility of the second charge carrier injection material in a sixth solvent is greater than the solubility of the second crosslinked charge carrier injection material in the sixth solvent; or the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material and a sixth photosensitive material under light radiation, wherein the solubility of the second charge carrier injection material and the sixth photosensitive material in a sixth solvent is greater than the solubility of the second crosslinked charge carrier injection material in the sixth solvent.

[0015] In some embodiments, the third crosslinked light-emitting material is generated by crosslinking a third quantum dot material under light radiation, wherein the solubility of the third quantum dot material in a seventh solvent is greater than the solubility of the third crosslinked light-emitting material in the seventh solvent; or the third crosslinked light-emitting material is generated by crosslinking a third quantum dot material and a seventh photosensitive material under light radiation, wherein the solubility of the third quantum dot material and the seventh photosensitive material in a seventh solvent is greater than the solubility of the third crosslinked light-emitting material in the seventh solvent.

[0016] The third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, wherein the solubility of the third charge carrier transport material in an eighth solvent is greater than the solubility of the third crosslinked charge carrier transport material in the eighth solvent; or the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, wherein the solubility of the third charge carrier transport material and the eighth photosensitive material in an eighth solvent is greater than the solubility of the third crosslinked charge carrier transport material in the eighth solvent.

[0017] In some embodiments, the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, wherein the solubility of the third charge carrier injection material in a ninth solvent is greater than the solubility of the third crosslinked charge carrier injection material in the ninth solvent; or the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, wherein the solubility of the third charge carrier injection material and the ninth photosensitive material in a ninth solvent is greater than the solubility of the third crosslinked charge carrier injection material in the ninth solvent.

[0018] In some embodiments, the at least one first light-emitting component is configured to emit light with a first wavelength; wherein each of the at least one first light-emitting component further comprises a first pattern layer and a second pattern layer, wherein the first pattern layer is arranged on a side of the first light-emitting pattern facing away from the base substrate, and the second pattern layer is arranged on a side of the first pattern layer facing away from the base substrate, wherein the first light-emitting pattern, the first pattern layer and the second pattern layer are sequentially contacted.

[0019] In some embodiments, in a case where the second sacrificial layer group comprises a second charge carrier transport layer, the thickness of the first pattern layer is less than the thickness of the second charge carrier transport layer; in a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material under light radiation, the material of the first pattern layer comprises the second charge carrier transport material; or, in a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material and a fifth photosensitive material under light radiation, the material of the first pattern layer comprises the second charge carrier transport material and the fifth photosensitive material; or In a case where the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the thickness of the first pattern layer is less than the thickness of the second charge carrier injection layer; in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material under light radiation, the material of the first pattern layer comprises the second charge carrier injection material; or, in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material and a sixth photosensitive material under light radiation, the material of the first pattern layer comprises the second charge carrier injection material and the sixth photosensitive material.

[0020] In some embodiments, in a case where the third sacrificial layer group comprises a third charge carrier transport layer, the thickness of the second pattern layer is less than the thickness of the third charge carrier transport layer; in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, the material of the second pattern layer comprises the third charge carrier transport material; or, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, the material of the second pattern layer comprises the third charge carrier transport material and the eighth photosensitive material; or In a case where the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the thickness of the second pattern layer is less than the thickness of the third charge carrier injection layer; in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, the material of the second pattern layer comprises the third charge carrier injection material; or, in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, the material of the second pattern layer comprises the third charge carrier injection material and the ninth photosensitive material.

[0021] In some embodiments, the at least one second light-emitting component is configured to emit light with a second wavelength; the at least one second light-emitting component further comprises a third pattern layer and a fourth pattern layer, wherein the third pattern layer is arranged on a side of the second sacrificial layer group facing the base substrate, and the fourth pattern layer is arranged on a side of the second light-emitting pattern facing away from the base substrate, wherein the third pattern layer, the second sacrificial layer group, the second light-emitting pattern and the fourth pattern layer are sequentially contacted.

[0022] In some embodiments, the thickness of the third pattern layer is less than the thickness of the first charge carrier injection layer; the material of the third pattern layer comprises the first cross-linked charge carrier injection material.

[0023] In a case where the third sacrificial layer group includes a third charge carrier transport layer, the thickness of the fourth pattern layer is less than the thickness of the third charge carrier transport layer; in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, the material of the fourth pattern layer includes the third charge carrier transport material; or, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, the material of the fourth pattern layer includes the third charge carrier transport material and the eighth photosensitive material; or In a case where the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the thickness of the fourth pattern layer is less than the thickness of the third charge carrier injection layer; in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, the material of the fourth pattern layer comprises the third charge carrier injection material; or, in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, the material of the fourth pattern layer comprises the third charge carrier injection material and the ninth photosensitive material.

[0024] In some embodiments, the at least one third light-emitting component is configured to emit light with a third wavelength; the at least one third light-emitting component further comprises a fifth pattern layer and a sixth pattern layer, wherein the sixth pattern layer is arranged on a side of the third sacrificial layer group facing the base substrate, and the fifth pattern layer is arranged on a side of the sixth pattern layer facing the base substrate, wherein the third sacrificial layer group, the sixth pattern layer and the fifth pattern layer are sequentially contacted.

[0025] In some embodiments, the thickness of the fifth pattern layer is less than the thickness of the first charge carrier injection layer; the material of the fifth pattern layer comprises the first cross-linked charge carrier injection material. In a case where the second sacrificial layer group comprises a second charge carrier transport layer, the thickness of the sixth pattern layer is less than the thickness of the second charge carrier transport layer; the material of the sixth pattern layer comprises the second cross-linked charge carrier transport material. Or, in a case where the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the thickness of the sixth pattern layer is less than the thickness of the second charge carrier injection layer; the material of the sixth pattern layer comprises the second cross-linked charge carrier injection material.

[0026] In some embodiments, the at least one first light-emitting component is configured to emit light with a first wavelength, wherein the light with the first wavelength is red light. The at least one second light-emitting component is configured to emit light with a second wavelength, wherein the light with the second wavelength is green light. The at least one third light-emitting component is configured to emit light with a third wavelength, wherein the light with the third wavelength is blue light.

[0027] In some embodiments, the light-emitting substrate further comprises a pixel definition layer provided with multiple openings, wherein the multiple light-emitting components are arranged in a one-to-one correspondence within the multiple openings. On a side of the pixel definition layer facing away from the base substrate, a seventh pattern layer, an eighth pattern layer, and a ninth pattern layer are provided, wherein the seventh, eighth, and ninth pattern layers are arranged sequentially in the direction away from the base substrate, and the seventh, eighth, and ninth pattern layers are sequentially contacted.

[0028] In some embodiments, the thickness of the seventh pattern layer is less than the thickness of the first charge carrier injection layer; in a case where the first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material under light radiation, the material of the seventh pattern layer comprises the first charge carrier injection material; or, in a case where the first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material and a third photosensitive material under light radiation, the material of the seventh pattern layer comprises the first charge carrier injection material and the third photosensitive material.

[0029] In a case where the second sacrificial layer group includes a second charge carrier transport layer, the thickness of the eighth pattern layer is less than the thickness of the second charge carrier transport layer. In a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material under light radiation, the material of the eighth pattern layer includes the second charge carrier transport material. Or, in a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material and a fifth photosensitive material under light radiation, the material of the eighth pattern layer includes the second charge carrier transport material and the fifth photosensitive material. Or, In a case where the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the thickness of the eighth pattern layer is less than the thickness of the second charge carrier injection layer; in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material under light radiation, the material of the eighth pattern layer comprises the second charge carrier injection material; or, in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material and a sixth photosensitive material under light radiation, the material of the eighth pattern layer comprises the second charge carrier injection material and the sixth photosensitive material.

[0030] In some embodiments, in a case where the third sacrificial layer group comprises a third charge carrier transport layer, the thickness of the ninth pattern layer is less than the thickness of the third charge carrier transport layer. In a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, the material of the ninth pattern layer comprises the third charge carrier transport material. Or, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, the material of the ninth pattern layer comprises the third charge carrier transport material and the eighth photosensitive material.Or, in a case where the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the thickness of the ninth pattern layer is less than the thickness of the third charge carrier injection layer; in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, the material of the ninth pattern layer comprises the third charge carrier injection material; or, in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, the material of the ninth pattern layer comprises the third charge carrier injection material and the ninth photosensitive material.

[0031] In some embodiments, any one of the first crosslinked light-emitting material, the second crosslinked light-emitting material, and the third crosslinked light-emitting material comprises any one of the structures shown in the following general formula (IA): or any one of the first crosslinked light-emitting material, the second crosslinked light-emitting material, and the third crosslinked light-emitting material comprises any one of the structures shown in the following general formula (IB): or any one of the first crosslinked light-emitting material, the second crosslinked light-emitting material, and the third crosslinked light-emitting material comprises any one of the structures shown in the following general formula (IC): where L1 is selected from any one of a single bond, an ester bond, an ether bond, and a thioether bond.R2, R3, R4, R5, R6, R7, and R8 are each independently selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40, and a heteroaryl group with C6-C40, respectively. QD represents any of the quantum dot bodies; the quantum dot body includes any of the II-VI quantum dot, III-V quantum dot, IV-VI quantum dot, core-shell quantum dot, and ABX3 perovskite quantum dot; in the ABX3 perovskite quantum dot, A is one or more of CH3NH3. + , NH2CH=NH2 and Cs + , B is one or two of Pb 2+ and Sn 2+ , and X is one or more of Cl - , Br - and I -The ABX3 perovskite quantum dot comprises CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CsPbBr3, CsPbCl3, and CsPbI3. R1' is selected from any of the remaining structures after removal of a hydrogen atom from a carboxyl group, an amino group, or a sulfhydryl group of R1; R1 is selected from any of the carboxyl group, amino group, or sulfhydryl group with a C1-C40 carbon chain; any of the carboxyl group, amino group, or sulfhydryl group is coordinated and connected to the quantum dot body. a, b, and c are each independently selected from positive integers greater than or equal to 2.

[0032] In some embodiments, any one of the first crosslinked charge carrier transport material, the second crosslinked charge carrier transport material, and the third crosslinked charge carrier transport material comprises any one of the structures shown in the following general formula (II-A): or any one of the first crosslinked charge carrier transport material, the second crosslinked charge carrier transport material, and the third crosslinked charge carrier transport material comprises any one of the structures shown in the following general formula (II-B): or any one of the first crosslinked charge carrier transport material, the second crosslinked charge carrier transport material, and the third crosslinked charge carrier transport material comprises any one of the structures shown in the following general formula (II-C): where L2 is selected from any one of a single bond, an ester bond, an ether bond, and a thioether bond. R9, R 10 , R11 , R 12 and R 13Each group is independently selected from any one of the following: a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40, and a heteroaryl group with C6-C40. X represents a remaining structure after removal of a CH bond from any one of the first, second, and third charge carrier transport materials; the CH bond is used for crosslinking with a second photosensitive group of a second-category photosensitive material under light irradiation; the second-category photosensitive material is one of the second, fifth, and eighth photosensitive materials.d, e and f are each independently selected from positive integers greater than or equal to 2.

[0033] In some embodiments, any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material, and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-A): or any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material, and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-B): or any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material, and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-C): or any one of the first crosslinked charge carrier injection material,the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any of the structures shown in the following general formula (III-D): or any of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any of the structures shown in the following general formula (III-E): or any of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any of the structures shown in the following general formula (III-F):

[0034] L3 and L4 are each independently selected from any single bond, ester bond, ether bond, and thioether bond, respectively. R 14 , R 15 , R 16 , R 17 , R18 , R 19 , R 20 , R 21 , R 22 and R 23are each independently selected from any one of the following: a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40, and a heteroaryl group with C6-C40. Y represents a remaining structure after removal of a CH bond from any one of the first, second, and third charge carrier injection materials; the CH bond is used for crosslinking with a third photosensitive group from a third-category photosensitive material under light irradiation; the third-category photosensitive material is one of the third, sixth, and ninth photosensitive materials. [M] m- , [Q] q- and [U] u-are each independently selected from any one of organic and inorganic anions, the organic anions comprising benzenesulfonate ions, salicylate ions and 3-hydroxy-2-naphthoic acid ions; and the inorganic anions comprising chloride ions, sulfate ions and nitrate ions. [N] n+ , [T] t+ and [W] z+ g, h, i, j, k, and v are each independently selected from any one of organic cations and inorganic cations, the organic cations comprising methylamine ions; and the inorganic cations comprising sodium ions and potassium ions. g, h, i, j, k, and v are each independently selected from positive integers greater than or equal to 2. m, n, q, t, u, and z are each independently selected from positive integers greater than or equal to 1.

[0035] In some embodiments, the first photosensitive material, the fourth photosensitive material, and the seventh photosensitive material are each independently selected from any one of photosensitive materials of a first category; wherein the photosensitive material of the first category comprises a first photosensitive group which undergoes a crosslinking reaction with a quantum dot material under light radiation; wherein the quantum dot material is one of the first quantum dot material, the second quantum dot material, and the third quantum dot material.The second photosensitive material, the fifth photosensitive material, and the eighth photosensitive material are each independently selected from any one of photosensitive materials of a second category; wherein the photosensitive material of the second category comprises a second photosensitive group which undergoes a crosslinking reaction with a charge carrier transport material under light radiation; wherein the charge carrier transport material is one of the first charge carrier transport material, the second charge carrier transport material, and the third charge carrier transport material.The third, sixth, and ninth photosensitive materials are each independently selected from any one of photosensitive materials of a third category; wherein the photosensitive material of the third category comprises a third photosensitive group which, under light radiation, undergoes a crosslinking reaction with a charge carrier injection material; wherein the charge carrier injection material is one of the first, second, and third charge carrier injection materials. Any two of the first, second, and third photosensitive groups may be the same or different.

[0036] In some embodiments, the photosensitive material of the third category exhibits a molar extinction coefficient of more than 1 cm.-1 (minor) -1 under ultraviolet light with a wavelength range of 200 nm to 400 nm.

[0037] In some embodiments, the photosensitive material of the first category is selected from any of the structures shown in the following general formula (IV-A): or the photosensitive material of the first category is selected from any of the structures shown in the following general formula (IV-B): or the photosensitive material of the first category is selected from any of the structures shown in the following general formula (IV-C): wherein in general formula (IV-A) the benzophenone group is the first photosensitive group; in general formula (IV-B) the azide group is the first photosensitive group; and in general formula (IV-C) the diazirine group is the first photosensitive group.L1 is selected from any single bond, ester bond, ether bond, or thioether bond; R2, R3, R4, R5, R6, R7, and R8 are each independently selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group C1-C40, cycloalkyl group C3-C40, heterocycloalkyl group C3-C40, aryl group C6-C40, and heteroaryl group C6-C40. a, b, and c are each independently selected from positive integers greater than or equal to 2.

[0038] In some embodiments, the photosensitive material of the second category is selected from any of the structures shown in the following general formula (VA): or the photosensitive material of the second category is selected from any of the structures shown in the following general formula (VB): the photosensitive material of the second category is selected from any of the structures shown in the following general formula (VC):

[0039] In general formula (VA), the benzophenone group is the second photosensitive group; in general formula (VB), the azide group is the second photosensitive group; and in general formula (VC), the diazirine group is the second photosensitive group. L2 is selected from any single bond, ester bond, ether bond, or thioether bond. R9, R 10 , R 11 , R 12 and R 13are each independently selected from any one of the following: a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40, and a heteroaryl group with C6-C40. d, e, and f are each independently selected from positive integers greater than or equal to 2.

[0040] In some embodiments, the third-category photosensitive material is selected from any of the structures shown in the following general formula (VI-A): or the third-category photosensitive material is selected from any of the structures shown in the following general formula (VI-B): or the third-category photosensitive material is selected from any of the structures shown in the following general formula (VI-C): or the third-category photosensitive material is selected from any of the structures shown in the following general formula (VI-D): or the third-category photosensitive material is selected from any of the structures shown in the following general formula (VI-E): or the third-category photosensitive material is selected from any of the structures shown in the following general formula (VI-F):

[0041] In general formulas (VI-A) and (VI-B), the benzophenone group is the third photosensitive group; in general formulas (VI-C) and (VI-D), the azide group is the third photosensitive group; and in general formulas (VI-E) and (VI-F), the diazirine group is the third photosensitive group. L3 and L4 are each independently selected from any single bond, ester bond, ether bond, and thioether bond, respectively. 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , R 22 and R 23are each independently selected from any one of the following: a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40, and a heteroaryl group with C6-C40. [M] m- , [Q] q- and [U] u- are each independently selected from any one of organic and inorganic anions; the organic anions comprising benzenesulfonate ions, salicylate ions and 3-hydroxy-2-naphthoate ions; and the inorganic anions comprising chloride ions, sulfate ions and nitrate ions. [N] n+ , [T] t+ and [W] z+g, h, i, j, k, and v are each independently selected from any one of organic and inorganic cations; the organic cations include methylamine ions; and the inorganic cations include sodium and potassium ions. g, h, i, j, k, and v are each independently selected from positive integers greater than or equal to 2. m, n, q, t, u, and z are each independently selected from positive integers greater than or equal to 1.

[0042] In some embodiments, R5, R6 and R7 are each independently selected from any saturated or unsaturated straight-chain or branched alkyl group of C10-C30, a saturated or unsaturated straight-chain or branched alkyl group of C10-C30 in which at least one hydrogen atom is replaced by a fluorine atom, and a saturated or unsaturated straight-chain or branched alkyl group of C10-C30 containing at least one ether bond; and / or, R 10 , R11 and R 12 are each independently selected from a saturated or unsaturated straight-chain or branched alkyl group from C1-C8; and / or, R 15 , R 17 , R 18 , R 19 , R 21 and R 23 are each independently selected from any of the following C1-C40 carbon chains containing an ester bond, an ether bond, a carbonyl group, an amid group, a carboxyl group, an amino group, and an aldehyde group.

[0043] In some embodiments, any one of the first quantum dot material, the second quantum dot material, and the third quantum dot material comprises a quantum dot body and a first ligand material coordinated to the quantum dot body; wherein the first ligand material contains a hydrocarbon insertion group ZH; wherein the hydrocarbon insertion group ZH is configured to undergo a hydrocarbon insertion reaction with first-category photosensitive groups upon exposure to light; and / or, any one of the first charge carrier transport material, the second charge carrier transport material, and the third charge carrier transport material comprises a hydrocarbon insertion group ZH; wherein the hydrocarbon insertion group ZH is configured to undergo a hydrocarbon insertion reaction with second-category photosensitive groups upon exposure to light;and / or, any one of the first, second, and third charge carrier injection materials comprises a hydrocarbon insertion group ZH; wherein the hydrocarbon insertion group ZH is configured to undergo a hydrocarbon insertion reaction with photosensitive groups of a third category upon exposure to light. In the hydrocarbon insertion group ZH, Z is any one of a primary carbon, a secondary carbon, and a tertiary carbon.

[0044] In some embodiments, the polarity of the third solvent is greater than the polarity of the second solvent, and the polarity of the second solvent is greater than the polarity of the first solvent; and / or, the polarity of the sixth solvent is greater than the polarity of the fifth solvent, and the polarity of the fifth solvent is greater than the polarity of the fourth solvent; and / or, the polarity of the ninth solvent is greater than the polarity of the eighth solvent, and the polarity of the eighth solvent is greater than the polarity of the seventh solvent.

[0045] In some embodiments, the solvent of the first category is at least one of octane and propylene glycol methyl ether acetate; the solvent of the first category is any one of the first solvent, the fourth solvent, and the seventh solvent; and / or, the solvent of the second category is at least one of toluene, chlorobenzene, and dichlorotoluene; the solvent of the second category is any one of the second solvent, the fifth solvent, and the eighth solvent; and / or, the solvent of the third category is at least one of water, ethanol, methanol, N,N-dimethylformamide, N-methylformamide, and thionyl chloride; the solvent of the third category is any one of the third solvent, the sixth solvent, and the ninth solvent.

[0046] In some embodiments, the first charge carrier injection layer, the second charge carrier injection layer and the third charge carrier injection layer are hole injection layers; the first charge carrier transport layer, the second charge carrier transport layer and the third charge carrier transport layer are hole transport layers.

[0047] In another aspect, a method for producing a light-emitting substrate is provided, wherein the method comprises forming several light-emitting devices on a base substrate. The several light-emitting devices are arranged sequentially along a first direction, the first direction being parallel to a plane in which the base substrate is located; wherein each of the several light-emitting devices comprises a first electrode, a second electrode, and a light-emitting pattern provided between the first electrode and the second electrode.The multiple light-emitting devices comprise at least one first light-emitting device, each of which includes a first light-emitting pattern, a first charge carrier transport layer, and a first charge carrier injection layer located between the base substrate and the first light-emitting pattern. The first charge carrier transport layer is located closer to the first light-emitting pattern than the first charge carrier injection layer. The material of the first light-emitting pattern comprises a first cross-linked light-emitting material; the material of the first charge carrier transport layer comprises a first cross-linked charge carrier transport material; and the material of the first charge carrier injection layer comprises a first cross-linked charge carrier injection material.

[0048] In some embodiments, forming the at least one first light-emitting device comprises the following: forming a first electrode layer on the base substrate, wherein the first electrode layer comprises a first electrode of the at least one first light-emitting device;Forming a first initial charge carrier injection layer, a first initial charge carrier transport layer, and a first initial light-emitting pattern successively on a side of the first electrode layer facing away from the base substrate, wherein the material of the first initial charge carrier injection layer comprises a first charge carrier injection material, or a first charge carrier injection material and a third photosensitive material, the material of the first initial charge carrier transport layer comprises a first charge carrier transport material, or a first charge carrier transport material and a second photosensitive material, and the material of the first initial light-emitting pattern comprises a first quantum dot material, or a first quantum dot material and a first photosensitive material;Exposure of the first initial charge carrier injection layer, the first initial charge carrier transport layer, and the first initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the first initial charge carrier injection layer into a first crosslinked charge carrier injection material, the material of an exposed section of the first initial charge carrier transport layer into a first crosslinked charge carrier transport material, and the material of an exposed section of the first initial light-emitting pattern into a first crosslinked light-emitting material;Developing the first initial charge carrier injection layer, the first initial charge carrier transport layer, and the first initial light-emitting pattern stacked on top of each other, thereby forming the first charge carrier injection layer, the first charge carrier transport layer, and the first light-emitting pattern stacked on top of each other.

[0049] In some embodiments, forming the at least one first light-emitting device comprises the following: forming the first electrode layer on the base substrate, wherein the first electrode layer comprises the first electrode of the at least one first light-emitting device; forming the first initial charge carrier injection layer on the side of the first electrode layer facing away from the base substrate, wherein the material of the first initial charge carrier injection layer comprises the first charge carrier injection material, or the first charge carrier injection material and the third photosensitive material; exposing the first initial charge carrier injection layer, thereby converting the material of the exposed section of the first initial charge carrier injection layer into the first crosslinked charge carrier injection material;Forming the first initial charge carrier transport layer and the first initial light-emitting pattern successively on a side of the first charge carrier injection layer facing away from the base substrate, wherein the material of the first initial charge carrier transport layer comprises the first charge carrier transport material, or the first charge carrier transport material and the second photosensitive material, and the material of the first initial light-emitting pattern comprises the first quantum dot material, or the first quantum dot material and the first photosensitive material;Exposure of the first initial charge carrier transport layer and the first initial light-emitting pattern, stacked on top of each other, thereby converting the material of the exposed section of the first initial charge carrier transport layer into the first crosslinked charge carrier transport material, and the material of the exposed section of the first initial light-emitting pattern into the first crosslinked light-emitting material; Development of the first initial charge carrier injection layer, the first initial charge carrier transport layer, and the first initial light-emitting pattern, stacked on top of each other, thereby forming the first charge carrier injection layer, the first charge carrier transport layer, and the first light-emitting pattern, stacked on top of each other.

[0050] In some embodiments, this method is used to manufacture a light-emitting component as described in some of the embodiments above (e.g., to manufacture the component described in Fig. 3A (shown light-emitting substrate). The formation of the multiple light-emitting components on the base substrate further comprises the formation of at least one second light-emitting component and the formation of at least one third light-emitting component.

[0051] The multiple light-emitting devices further comprise the at least one second light-emitting device, wherein each of the at least one second light-emitting device comprises a second sacrificial layer group, wherein, in a case where the second sacrificial layer group comprises a second charge carrier transport layer, the formation of the at least one second light-emitting device comprises: successively forming a second initial charge carrier transport layer and a second initial light-emitting pattern on a side of the first electrode layer and of the at least one first light-emitting device facing away from the base substrate, wherein the material of the second initial charge carrier transport layer comprises a second charge carrier transport material, or a second charge carrier transport material and a fifth photosensitive material.and the material of the second initial light-emitting pattern comprises a second quantum dot material, or a second quantum dot material and a fourth photosensitive material; exposure of the second initial charge carrier transport layer and the second initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the second initial charge carrier transport layer into a second cross-linked charge carrier transport material, and the material of an exposed section of the second initial light-emitting pattern into a second cross-linked light-emitting material; development of the second initial charge carrier transport layer and the second initial light-emitting pattern stacked on top of each other, thereby forming the second charge carrier transport layer and the second light-emitting pattern stacked on top of each other.

[0052] The multiple light-emitting devices further comprise the at least one third light-emitting device, wherein each of the at least one third light-emitting device comprises a third sacrificial layer group, wherein, in a case where the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the formation of the at least one third light-emitting device comprises: forming a third initial charge carrier transport layer and a third initial light-emitting pattern successively on a side of the first electrode layer, the at least one first light-emitting device and the at least one second light-emitting device facing away from the base substrate, wherein the material of the third initial charge carrier transport layer is a third charge carrier transport material.or comprises a third charge carrier transport material and an eighth photosensitive material; and the material of the third initial light-emitting pattern comprises a third quantum dot material, or a third quantum dot material and a seventh photosensitive material; exposing the third initial charge carrier transport layer and the third initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the third initial charge carrier transport layer into a third crosslinked charge carrier transport material, and converting the material of an exposed section of the third initial light-emitting pattern into a third crosslinked light-emitting material; developing the third initial charge carrier transport layer and the third initial light-emitting pattern stacked on top of each other,forming the third charge carrier transport layer and the third light-emitting pattern, which are stacked on top of each other.

[0053] In some embodiments, this method is used to manufacture a light-emitting component as described in some of the embodiments above (e.g., to manufacture the component described in Fig. 3B shown light-emitting substrate). The formation of the multiple light-emitting components on the base substrate further comprises at least one second light-emitting component and the formation of at least one third light-emitting component.

[0054] The multiple light-emitting devices further comprise the at least one second light-emitting device, wherein each of the at least one second light-emitting device comprises a second sacrificial layer group, wherein, in a case where the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the formation of the at least one second light-emitting device comprises: forming a second initial charge carrier injection layer, a second initial charge carrier transport layer, and a second initial light-emitting pattern successively on a side of the first electrode layer and of the at least one first light-emitting device facing away from the base substrate, wherein the material of the second initial charge carrier injection layer is a second charge carrier injection material.or comprises a second charge carrier injection material and a sixth photosensitive material, the material of the second initial charge carrier transport layer comprises a second charge carrier transport material, or a second charge carrier transport material and a fifth photosensitive material, and the material of the second initial light-emitting pattern comprises a second quantum dot material, or a second quantum dot material and a fourth photosensitive material; exposing the second initial charge carrier injection layer, the second initial charge carrier transport layer, and the second initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the second initial charge carrier injection layer into a second crosslinked charge carrier injection material,the material of an exposed section of the second initial charge carrier transport layer is converted into a second cross-linked charge carrier transport material, and the material of an exposed section of the second initial light-emitting pattern is converted into a second cross-linked light-emitting material; developing the second initial charge carrier injection layer, the second initial charge carrier transport layer, and the second initial light-emitting pattern, which are stacked on top of each other, thereby forming the second charge carrier injection layer, the second charge carrier transport layer, and the second light-emitting pattern, which are stacked on top of each other.

[0055] The multiple light-emitting devices further comprise the at least one third light-emitting device, wherein each of the at least one third light-emitting device comprises a third sacrificial layer group, wherein, in a case where the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the formation of the at least one third light-emitting device comprises: forming a third initial charge carrier injection layer, a third initial charge carrier transport layer, and a third initial light-emitting pattern successively on a side of the first electrode layer, the at least one first light-emitting device, and the at least one second light-emitting device facing away from the base substrate, wherein the material of the third initial charge carrier injection layer is a third charge carrier injection material.or comprises a third charge carrier injection material and a ninth photosensitive material, the material of the third initial charge carrier transport layer comprises a third charge carrier transport material, or a third charge carrier transport material and an eighth photosensitive material, and the material of the third initial light-emitting pattern comprises a third quantum dot material, or a third quantum dot material and a seventh photosensitive material; exposing the third initial charge carrier injection layer, the third initial charge carrier transport layer, and the third initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the third initial charge carrier injection layer into a third crosslinked charge carrier injection material,the material of an exposed section of the third initial charge carrier transport layer is converted into a third cross-linked charge carrier transport material, and the material of an exposed section of the third initial light-emitting pattern is converted into a third cross-linked light-emitting material; developing the third initial charge carrier injection layer, the third initial charge carrier transport layer, and the third initial light-emitting pattern, stacked on top of each other, thereby forming the third charge carrier injection layer, the third charge carrier transport layer, and the third light-emitting pattern, stacked on top of each other.

[0056] In some embodiments, this method is used to manufacture a light-emitting component as described in some of the embodiments above (e.g., to manufacture the component described in Fig. 3B shown light-emitting substrate). The formation of the multiple light-emitting components on the base substrate further comprises the formation of at least one second light-emitting component and the formation of at least one third light-emitting component.

[0057] The multiple light-emitting devices further comprise the at least one second light-emitting device, wherein each of the at least one second light-emitting device comprises a second sacrificial layer group, wherein, in a case where the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the formation of the at least one second light-emitting device comprises: forming a second initial charge carrier injection layer on a side of the first electrode layer and of the at least one first light-emitting device facing away from the base substrate, wherein the material of the second initial charge carrier injection layer comprises a second charge carrier injection material, or a second charge carrier injection material and a sixth photosensitive material;Exposure of the second initial charge carrier injection layer, thereby converting the material of an exposed section of the second initial charge carrier injection layer into a second crosslinked charge carrier injection material; sequential formation of a second initial charge carrier transport layer and a second initial light-emitting pattern on a side of the second initial charge carrier injection layer facing away from the base substrate, wherein the material of the second initial charge carrier transport layer comprises a second charge carrier transport material, or a second charge carrier transport material and a fifth photosensitive material, and the material of the second initial light-emitting pattern comprises a second quantum dot material, or a second quantum dot material and a fourth photosensitive material;Exposure of the second initial charge carrier transport layer and the second initial light-emitting pattern, which are stacked on top of each other, thereby converting the material of an exposed section of the second initial charge carrier transport layer into a second cross-linked charge carrier transport material, and converting the material of an exposed section of the second initial light-emitting pattern into a second cross-linked light-emitting material; Development of the second initial charge carrier injection layer, the second initial charge carrier transport layer, and the second initial light-emitting pattern, which are stacked on top of each other, thereby forming the second charge carrier injection layer, the second charge carrier transport layer, and the second light-emitting pattern, which are stacked on top of each other.

[0058] The multiple light-emitting devices further comprise the at least one third light-emitting device, wherein each of the at least one third light-emitting device comprises a third sacrificial layer group, wherein, in a case where the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the formation of the at least one third light-emitting device comprises: forming a third initial charge carrier injection layer on a side of the first electrode layer, the at least one first light-emitting device and the at least one second light-emitting device facing away from the base substrate, wherein the material of the third initial charge carrier injection layer comprises a third charge carrier injection material, or a third charge carrier injection material and a ninth photosensitive material;Exposure of the third initial charge carrier injection layer, thereby converting the material of an exposed section of the third initial charge carrier injection layer into a third crosslinked charge carrier injection material; sequential formation of a third initial charge carrier transport layer and a third initial light-emitting pattern on a side of the third initial charge carrier injection layer facing away from the base substrate, wherein the material of the third initial charge carrier transport layer comprises a third charge carrier transport material, or a third charge carrier transport material and an eighth photosensitive material, and the material of the third initial light-emitting pattern comprises a third quantum dot material, or a third quantum dot material and a seventh photosensitive material;Exposure of the third initial charge carrier transport layer and the third initial light-emitting pattern, stacked on top of each other, thereby converting the material of an exposed section of the third initial charge carrier transport layer into a third crosslinked charge carrier transport material, and converting the material of an exposed section of the third initial light-emitting pattern into a third crosslinked light-emitting material; Development of the third initial charge carrier injection layer, the third initial charge carrier transport layer, and the third initial light-emitting pattern, stacked on top of each other, thereby forming the third charge carrier injection layer, the third charge carrier transport layer, and the third light-emitting pattern, stacked on top of each other.

[0059] In some embodiments, this method is used to manufacture a light-emitting component as described in some of the embodiments above (e.g., to manufacture the component described in Fig. 3A or Fig. 3B shown light-emitting substrate). In an initial light-emitting pattern, the ratio of a mass of the photosensitive material of the first category to a mass of the quantum dot material is in a range of 0% to 30%, wherein the initial light-emitting pattern is one of the first initial light-emitting pattern, the second initial light-emitting pattern, and the third initial light-emitting pattern; and / or, in an initial charge carrier transport layer, the ratio of a mass of the photosensitive material of the second category to a mass of the charge carrier transport material is in a range of 0% to 30%, wherein the initial charge carrier transport layer is one of the first initial charge carrier transport layer, the second initial charge carrier transport layer, and the third initial charge carrier transport layer;and / or, in an initial charge carrier injection layer, the ratio of a mass of the photosensitive material of the third category to a mass of the charge carrier injection material is in a range of 0% to 30%, wherein the initial charge carrier injection layer is one of the first initial charge carrier injection layer, the second initial charge carrier injection layer, and the third initial charge carrier injection layer.

[0060] In another aspect, a light-emitting device is provided, comprising a light-emitting substrate according to one of the above embodiments and a driver chip for driving the light-emitting substrate to emit light. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] To more clearly illustrate the technical solutions in the present disclosure, the drawings required in some embodiments of the present disclosure are briefly described below. Obviously, the drawings in the following description are only drawings of some embodiments of the present disclosure, and a person skilled in the art in the relevant field can derive other drawings from them. Furthermore, the drawings in the following description can be considered schematic representations, but they do not represent any limitations with regard to the actual dimensions of the products, the actual sequences of the processes, the actual timings of the signals, and the like, contained in the embodiments of the present disclosure. Fig. Figure 1 shows a flowchart for the preparation of a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 2 shows a structural diagram of a light-emitting substrate provided according to some embodiments of the present disclosure; Fig. Figure 3A shows a structural diagram of a light-emitting substrate provided according to some embodiments of the present disclosure; Fig. Figure 3B shows another structural diagram of a light-emitting substrate provided according to some embodiments of the present disclosure; Fig. Figure 4 shows a step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 5 shows another step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 6 shows a further step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 7 shows a further step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 8 shows a further step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 9A shows a further step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 9B shows a further step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 10A shows a further step diagram of a method for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 10B shows a further step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 11A shows a further step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. Figure 11B shows a further step diagram of a process for producing a light-emitting substrate, which is provided according to some embodiments of the present disclosure; Fig. 12 shows a structural diagram of a light-emitting device provided according to some embodiments of the present disclosure; Fig. Figure 13 shows a UV absorption spectrum diagram of a charge carrier injection layer provided according to some embodiments of the present disclosure; Fig. Figure 14 shows another UV absorption spectrum diagram of a charge carrier injection layer provided according to some embodiments of the present disclosure; Fig. Figure 15 shows a diagram of a light-emitting component provided according to some embodiments of the present disclosure, under a fluorescence microscope; Fig. Figure 16 shows a characteristic curve of the current density as a function of the voltage of a light-emitting component provided according to some embodiments of the present disclosure; Fig. Figure 17 shows a characteristic curve of the brightness as a function of the voltage of a light-emitting component provided according to some embodiments of the present disclosure; Fig. Figure 18 shows a characteristic curve of the current efficiency as a function of the voltage of a light-emitting component provided according to some embodiments of the present disclosure; Fig. Figure 19 shows a characteristic curve of the course of the external quantum efficiency as a function of the voltage of a light-emitting device provided according to some embodiments of the present disclosure; Fig. Figure 20 shows a diagram of a light-emitting component provided according to some embodiments of the present disclosure, under a fluorescence microscope; Fig. Figure 21 shows a diagram of illumination test results of a light-emitting component provided according to some embodiments of the present disclosure; Fig. Figure 22 shows a photodiagram of the electroluminescence of a light-emitting device provided according to some embodiments of the present disclosure, under a fluorescence microscope; Fig. Figure 23 shows a characteristic curve of the electroluminescence intensity as a function of the wavelength of a light-emitting component provided according to some embodiments of the present disclosure. FORMS OF EXECUTION OF THE INVENTION

[0062] The technical solutions in some embodiments of the present disclosure are described clearly and completely below in conjunction with drawings. Obviously, the described embodiments represent only a part of the embodiments of the present disclosure, but not all embodiments. Starting from the embodiments provided in the present disclosure, all other embodiments obtained by a person skilled in the art in this field fall within the scope of protection of the present disclosure.

[0063] Unless the context otherwise requires, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are to be interpreted throughout the description and claims as open and containing, namely "including but not limited to." In the description, the terms "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples" are to indicate that the specific features, structures, materials, or properties associated with that embodiment or example are contained in at least one embodiment or example of the present disclosure.The schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the described specific features, structures, materials, or properties may be incorporated into one or more embodiments or examples in any suitable manner.

[0064] In the following, the terms “first” and “second” are used solely for descriptive purposes and are not to be understood as indicating or implying any relative significance, or as referring to the number of technical features specified. Therefore, the feature defined as “first” or “second” may explicitly or implicitly include one or more of these features. In the description of embodiments of this disclosure, unless otherwise specified, the expression “several” means two or more than two.

[0065] “At least one of A, B and C” has the same meaning as “at least one of A, B or C”, and both include the following combinations of A, B and C: only A, only B, only C, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0066] “A and / or B” includes the following three combinations: A only, B only, and the combination of A and B.

[0067] As used herein, the terms “about”, “approximately” or “nearly” encompass both the stated value and an average value within an acceptable range of deviation from a given value, the acceptable range of deviation being determined, for example, by a person skilled in the art in the relevant field, taking into account the measurement under discussion and the error associated with measuring a given quantity (namely, the limitations of the measuring system).

[0068] As used herein, the terms "parallel", "perpendicular", and "equal" encompass both the specified situation and a situation similar to the specified situation that lies within an acceptable range of deviation, the acceptable range of deviation being determined, for example, by a person skilled in the art in the relevant field, taking into account the measurement under discussion and the error associated with measuring a particular quantity (namely, the limitations of the measuring system). For example, the term "parallel" encompasses both absolutely parallel and approximately parallel, where the acceptable range of deviation for approximately parallel may, for example, be within 5°; the term "perpendicular" encompasses both absolutely perpendicular and approximately perpendicular, where the acceptable range of deviation for approximately perpendicular may, for example, also be within 5°.The term "equal" encompasses both absolutely equal and approximately equal, whereby the acceptable range of deviation for approximately equal may, for example, consist of the difference between two equal things being less than or equal to 5% of either.

[0069] It is understood that when a layer or element is described as being on top of another layer or substrate, this can mean that this layer or element lies directly on top of the other layer or substrate, but also that there is an intermediate layer between this layer or element and the other layer or substrate.

[0070] Exemplary embodiments are described herein with reference to sectional and / or top views, which serve as idealized exemplary drawings. In the drawings, the layer thickness and the area of ​​the region are enlarged for clarity. Therefore, changes in shape compared to the drawings are conceivable, e.g., due to manufacturing techniques and / or tolerances. Consequently, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should also include deviations in shape that may result, for example, from manufacturing processes. For instance, an etched region shown as a rectangle typically exhibits a characteristic with respect to curvature.Accordingly, the areas shown in the drawings are essentially schematic, and their shapes are intended neither to illustrate the actual shapes of the areas of the device nor to limit the scope of the exemplary embodiments.

[0071] As described in the prior art, quantum dots (QDs) exhibit excellent light-emitting properties due to quantum confinement effects, including broadband absorption, narrowband emission, and continuously tunable peak positions, among others. Furthermore, quantum dots can be processed in solution, thus avoiding the use of costly vacuum systems. This allows quantum dot light-emitting diodes (QLEDs) with quantum dots as the light-emitting material to be widely used in display illumination, solar cells, photoelectric detection, and other applications. Structuring involves pixelating the quantum dots with the solution state, which is the only way to transform quantum dots into shaped optoelectronic devices and even commercial products.The structuring of quantum dots can be achieved indirectly using conventional photoresist. However, due to the incompatibility between the solvent used for quantum dots and the solvent for photoresist, as well as the fact that the introduction of photoresist reduces the luminescence properties of the quantum dots themselves, structuring quantum dots using conventional photoresist methods is difficult. The manufacturing technology for light-emitting layers of quantum dot LEDs mainly includes inkjet printing, photolithography, and transfer technologies, among others. Photolithography is considered a more promising method for producing high-resolution quantum dot LEDs.

[0072] The surface ligands with photosensitivity enable the direct structuring of quantum dots via photolithography. The main principle is to utilize photochemical reactions such as decomposition or crosslinking of photosensitive groups to modify the colloidal stability of the quantum dots before and after the photochemical reaction and to achieve selective structuring through development.

[0073] Photolithography technology is a technology for realizing the structuring of quantum dots by means of exposure and development.

[0074] As in Fig. Figure 1 shows an example of a manufacturing process for a light-emitting pattern 23 of a light-emitting substrate 1. Referring to the last partial figure in Fig. Figure 1 (namely, the partial representation corresponding to step S8) comprises the light-emitting substrate 1: a base substrate 11, a pixel definition layer 12 arranged on the base substrate 11, and several light-emitting components, each light-emitting component comprising a light-emitting pattern 23. The pixel definition layer 12 has several openings Q, and the several light-emitting components can be arranged in a one-to-one correspondence with the several openings Q.

[0075] For example, the multiple light-emitting components include: a red light-emitting component R, a green light-emitting component G, and a blue light-emitting component B. The following describes the process by which the light-emitting pattern R1 of the red light-emitting component R, the light-emitting pattern G1 of the green light-emitting component G, and the light-emitting pattern B1 of the blue light-emitting component B are formed sequentially.

[0076] As in Fig. As shown in Figure 1, this process comprises steps S1 to S8.

[0077] To increase the efficiency of electron and hole injection into the light-emitting pattern 23, a front film layer 13 is further provided between the base substrate 11 and the light-emitting pattern 23, which comprises, for example, one or two electron injection layers, electron transport layers, hole injection layers and hole transport layers. S1: Coating a red quantum dot (RQD) luminescent material on a side of the front film layer 13 facing away from the base substrate 11 to form a red initial light-emitting pattern R10, and exposing the red initial light-emitting pattern R10, wherein the area in which a red light-emitting device R is preformed is an exposed area. S2: Developing the red initial light-emitting pattern R10, and maintaining the red initial light-emitting pattern R10 in the exposed area to form a light-emitting pattern R1 of the red light-emitting component R. S3: Coating a green quantum dot (GQD) luminescent material on a side of the light-emitting pattern R1 of the red light-emitting device R and the front film layer 13 facing away from the base substrate 11 to form a green initial light-emitting pattern G10. S4: Exposure of the green initial light-emitting pattern G10, wherein the area in which a green light-emitting building element G is preformed is an exposed area. S5: Developing the green initial light-emitting pattern G10, and maintaining the green initial light-emitting pattern G10 in the exposed area to form a light-emitting pattern G1 of the green light-emitting component G. S6: Coating a blue quantum dot (BQD) luminescent material on a side of the light-emitting pattern G1 of the green light-emitting device G, the light-emitting pattern R1 of the red light-emitting device R and the front film layer 13 facing away from the base substrate 11 to form a blue initial light-emitting pattern B10. S7: Exposure of the blue initial light-emitting pattern B10, wherein the area in which a blue light-emitting component B is preformed is an exposed area. S8: Developing the blue initial light-emitting pattern B10, and maintaining the blue initial light-emitting pattern B10 in the exposed area to form a light-emitting pattern B1 of the blue light-emitting component B.

[0078] During the practical manufacturing process of the light-emitting pattern 23 of the light-emitting substrate 1, as in Fig. As shown in Figure 2, however, due to certain interactions between the quantum dot phosphor material and the material of the adjacent film layer, including but not limited to van der Waals forces, electrostatic forces, gravitational forces, capillary forces, and the like, the structuring process presents the problem that the quantum dot phosphor material of the previous color (e.g., red quantum dot phosphor material) is not completely washed out. This results in remnants of the quantum dot phosphor material of the previous color (e.g., red quantum dot phosphor material) remaining on the side of the light-emitting pattern of the next color (e.g., the light-emitting pattern G1 of the green light-emitting component G) facing the base substrate 11. Simultaneously, this structuring process also presents the problem that the quantum dot phosphor material of the next color (e.g.,blue quantum dot phosphor material) is not completely washed out, resulting in residues of the quantum dot phosphor material of the next color (e.g., the blue quantum dot phosphor material) remaining on a side of the light-emitting pattern of the previous color (e.g., the light-emitting pattern G1 of the green light-emitting component G) facing away from the base substrate 11.

[0079] For example, how in Fig. Figure 2 shows the successive formation of the light-emitting pattern R1 of the red light-emitting component R, the light-emitting pattern G1 of the green light-emitting component G, and the light-emitting pattern B1 of the blue light-emitting component B as examples. On the side of the light-emitting pattern R1 of the red light-emitting component R facing away from the base substrate 11, there is a residual layer G0, which is formed from the green quantum dot phosphor material, and a residual layer B0, which is formed from the blue quantum dot phosphor material.On the side of the light-emitting pattern G1 of the green light-emitting device G facing the base substrate 11, there is a residual layer R0 formed from the red quantum dot phosphor material, and on the side of the light-emitting pattern G1 of the green light-emitting device G facing away from the base substrate 11, there is a residual layer B0 formed from the blue quantum dot phosphor material. On the side of the light-emitting pattern B1 of the blue light-emitting device B facing the base substrate 11, there is a residual layer R0 formed from the red quantum dot phosphor material, as well as a residual layer G0 formed from the green quantum dot phosphor material.

[0080] Such residual layers formed by quantum dot luminescent materials cause the problem of color mixing, so that when the light-emitting component is illuminated, the problem of an impure light emission spectrum easily occurs, which in turn impairs the performance of the component.

[0081] Starting from the problem mentioned above, as in Fig. 3A- Fig. As shown in Figure 3B, some embodiments of the present disclosure provide a light-emitting substrate 10, wherein the light-emitting substrate 10 comprises a base substrate 11 and several light-emitting components 20. The several light-emitting components 20 are provided on the base substrate 11 and arranged sequentially along a first direction X, the first direction X being parallel to a plane X1 in which the base substrate 11 is located, each light-emitting component 20 of the several light-emitting components 20 comprising a first electrode 21, a second electrode 22, and a light-emitting pattern 23 provided between the first electrode 21 and the second electrode 22, the first electrode 21 being closer to the base substrate 11 than the second electrode 22.

[0082] For example, how in Fig. 3A- Fig. As shown in Figure 3B, the light-emitting substrate 10 further comprises a pixel definition layer 12 which is arranged on the base substrate 11 and has multiple apertures Q, and the multiple light-emitting components 20 can be provided in one-to-one correspondence with the multiple apertures Q.

[0083] In some examples, the first electrode 21 can be an anode, while the second electrode 22 is a cathode. In some other examples, the first electrode 21 can be a cathode, while the second electrode 22 is an anode.

[0084] The luminescence principle of the light-emitting component 20 consists in the fact that a circuit connected to the anode and cathode injects holes into the light-emitting pattern 23 by means of the anode and injects electrons into the light-emitting pattern 23 by means of the cathode, whereby the electrons and the holes form excitons in the light-emitting pattern 23, which return to the ground state by means of a radiation transition and thereby emit photons.

[0085] As in Fig. 3A- Fig. As shown in Figure 3B, the multiple light-emitting components 20 comprise at least one first light-emitting component 201, wherein each first light-emitting component 201 of the at least one first light-emitting component 201 comprises a first light-emitting pattern 23a and a first charge carrier transport layer 131 and a first charge carrier injection layer 141, which are provided between the base substrate 11 and the first light-emitting pattern 23a; wherein the first charge carrier transport layer 131 is located closer to the first light-emitting pattern 23a than the first charge carrier injection layer 141;wherein the material of the first light-emitting pattern 23a comprises a first cross-linked light-emitting material, the material of the first charge carrier transport layer 131 comprises a first cross-linked charge carrier transport material, and the material of the first charge carrier injection layer 141 comprises a first cross-linked charge carrier injection material.

[0086] For example, how in Fig. 3A- Fig. As shown in Figure 3B, the first charge carrier injection layer 141, the first charge carrier transport layer 131 and the first light-emitting pattern 23a are contacted sequentially.

[0087] For example, the first light-emitting device 201 could be a light-emitting device that emits red light, and the first quantum dot material could be a red quantum dot luminescent material.

[0088] In some examples, the first crosslinked light-emitting material is generated by crosslinking the first quantum dot material under light radiation. The first quantum dot material is a crosslinkable organic material. For example, the first quantum dot material comprises a first quantum dot body and a ligand material, where the ligand material is a crosslinkable organic material. That is, by illuminating the first quantum dot material in the region where the first light-emitting device 201 is located, self-crosslinking of the first quantum dot material is achieved, thus forming the first crosslinked light-emitting material. The solubility of the first quantum dot material in a first solvent is greater than that of the first crosslinked light-emitting material in the first solvent. Subsequently, development takes place, whereby the first crosslinked light-emitting material is immersed in the developer solution (e.g.,the first solvent) is insoluble, while the first quantum dot material is soluble in it. This removes the first quantum dot material from the remaining regions outside the region where the first light-emitting device 201 is located, forming a structured first light-emitting pattern 23a.

[0089] In some other examples, the first cross-linked light-emitting material is generated by cross-linking the first quantum dot material and the first photosensitive material under light radiation. That is, by exposing the first quantum dot material and the first photosensitive material in the area where the first light-emitting device 201 is located, cross-linking of the first quantum dot material and the first photosensitive material is achieved, thereby forming the first cross-linked light-emitting material. The solubility of the first quantum dot material and the first photosensitive material in the first solvent is greater than that of the first cross-linked light-emitting material in the first solvent. Subsequently, development takes place, whereby the first cross-linked light-emitting material is dissolved in the developer solution (e.g.,the first solvent) is insoluble, while the first quantum dot material and the first photosensitive material are soluble in it. This removes the first quantum dot material and the first photosensitive material from the remaining regions outside the region where the first light-emitting device 201 is located, forming a structured first light-emitting pattern 23a.

[0090] For example, the first solvent is a first-category solvent, wherein the first-category solvent comprises at least one of octane and propylene glycol methyl ether acetate (PMA).

[0091] For example, the first charge carrier transport layer 131 is an electron transport layer and the first charge carrier injection layer 141 is an electron injection layer. The first electrode 21 is a cathode and the second electrode 22 is an anode. The first light-emitting device 201 is an "inverted" light-emitting device.

[0092] For example, the first charge carrier transport layer 131 is a hole transport layer and the first charge carrier injection layer 141 is a hole injection layer. The first electrode 21 is an anode and the second electrode 22 is a cathode. The first light-emitting device 201 is a "positive" light-emitting device.

[0093] In some examples, the first crosslinked charge carrier transport material is generated by crosslinking it under light radiation. The first charge carrier transport material is a crosslinkable organic material. That is, by irradiating the first charge carrier transport material in the area where the first light-emitting device 201 is located, self-crosslinking of the first charge carrier transport material is achieved, thus forming the first crosslinked charge carrier transport material. The solubility of the first charge carrier transport material in the second solvent is greater than that of the first crosslinked charge carrier transport material in the second solvent. Subsequently, development takes place, whereby the first crosslinked charge carrier transport material is insoluble in the developer solution (e.g., the second solvent), while the first charge carrier transport material is soluble.This removes the first charge carrier transport material in the remaining areas outside the area where the first light-emitting component 201 is located, thereby forming a structured first charge carrier transport layer 131.

[0094] In some other examples, the first cross-linked charge carrier transport material is generated by cross-linking the first charge carrier transport material and the second photosensitive material under light irradiation. That is, by exposing the first charge carrier transport material and the second photosensitive material in the area where the first light-emitting device 201 is located, cross-linking of the first charge carrier transport material and the second photosensitive material is achieved, thereby forming the first cross-linked charge carrier transport material. The solubility of the first charge carrier transport material and the second photosensitive material in a second solvent is greater than that of the first cross-linked charge carrier transport material in the second solvent. Subsequently, development takes place, whereby the first cross-linked charge carrier transport material is dissolved in the developer solution (e.g.,the second solvent) is insoluble, while the first charge carrier transport material and the second photosensitive material are soluble in it. This removes the first charge carrier transport material and the second photosensitive material from the remaining areas outside the region where the first light-emitting device 201 is located, thus forming a structured first charge carrier transport layer 131.

[0095] For example, the second solvent is a second-category solvent, wherein the second-category solvent comprises at least one of toluene, chlorobenzene, or dichlorotoluene.

[0096] In some examples, the first crosslinked charge carrier injection material is generated by crosslinking it under light irradiation. The first charge carrier injection material is a crosslinkable organic material. That is, by irradiating the first charge carrier injection material in the area where the first light-emitting device 201 is located, self-crosslinking of the first charge carrier injection material is achieved, thus forming the first crosslinked charge carrier injection material. The solubility of the first charge carrier injection material in a third solvent is greater than that of the first crosslinked charge carrier injection material in the third solvent. Subsequently, development takes place, whereby the first crosslinked charge carrier injection material is insoluble in the developer solution (e.g., the third solvent), while the first charge carrier injection material is soluble in it.This removes the first charge carrier injection material in the remaining areas outside the area where the first light-emitting device 201 is located, forming a structured first charge carrier injection layer 141.

[0097] In some other examples, the first crosslinked charge carrier injection material is generated by crosslinking the first charge carrier injection material and the third photosensitive material under light irradiation. That is, by exposing the first charge carrier injection material and the third photosensitive material in the area where the first light-emitting device 201 is located, crosslinking of the first charge carrier injection material and the third photosensitive material is achieved, thereby forming the first crosslinked charge carrier injection material. The solubility of the first charge carrier injection material and the third photosensitive material in the third solvent is greater than that of the first crosslinked charge carrier injection material in the third solvent. Subsequently, development takes place, whereby the first crosslinked charge carrier injection material is immersed in the developer solution (e.g.,the third solvent) is insoluble, while the first charge carrier injection material and the third photosensitive material are soluble in it. This removes the first charge carrier injection material and the third photosensitive material from the remaining areas outside the region where the first light-emitting device 201 is located, forming a structured first charge carrier injection layer 141.

[0098] For example, the third solvent is a third-category solvent, wherein the third-category solvent comprises at least one of water, ethanol, methanol, N,N-dimethylformamide, N-methylformamide and thionyl chloride.

[0099] The following describes, by way of example, a method for manufacturing at least one first light-emitting component, as in Fig. 4 shown, including M1 to M4.

[0100] M1: Forming a first electrode layer 21a on the base substrate 11, wherein the first electrode layer 21a comprises a first electrode 21 of the at least one first light-emitting device 201.

[0101] An example is the process for forming the first electrode layer 21a magnetron sputtering.

[0102] For example, the first electrodes 21 correspond one-to-one to the openings Q of the pixel definition layer 12.

[0103] M2: Formation of a first initial charge carrier injection layer 141i, a first initial charge carrier transport layer 131i and a first initial light-emitting pattern 23ai successively on a side of the first electrode layer 21a facing away from the base substrate 11.

[0104] An example of a method for forming the first initial charge carrier injection layer 141i is one of the following methods: spin coating, silk screen printing, knife coating and drop casting, and the solution for the method is a third solution, wherein its solvent is the third solvent and its solute is the material for forming the first initial charge carrier injection layer 141i.It should be noted that in the case where the first crosslinked charge carrier injection material is formed by self-crosslinking of the first charge carrier injection material, the material for forming the first initial charge carrier injection layer 141i is the first charge carrier injection material; or that in the case where the first crosslinked charge carrier injection material is formed by crosslinking the first charge carrier injection material and the third photosensitive material, the material for forming the first initial charge carrier injection layer 141i consists of the first charge carrier injection material and the third photosensitive material.

[0105] An example of the process for forming the first initial charge carrier transport layer 131i is one of the following processes: centrifugal coating, screen printing, doctor blade coating and droplet coating, and the solution for the process is a second solution, wherein its solvent is the second solvent and its solute is the material for forming the first initial charge carrier transport layer 131i.It should be noted that in the case where the first crosslinked load carrier transport material is formed by self-crosslinking of the first load carrier transport material, the material for forming the first initial load carrier transport layer 131i is the first load carrier transport material; or, in the case where the first crosslinked load carrier transport material is formed by crosslinking of the first load carrier transport material and the second photosensitive material, the material for forming the first initial load carrier transport layer 131i consists of the first load carrier transport material and the second photosensitive material.

[0106] An example of the process for forming the first initial light-emitting pattern 23ai is one of the following processes: centrifugal coating, screen printing, doctor blade coating and droplet coating, and the solution for the process is a first solution, wherein its solvent is the first solvent and its solute is the material for forming the first initial light-emitting pattern 23ai.It should be noted that in the case where the first networked light-emitting material is formed by self-linking of the first quantum dot material, the material for forming the first initial light-emitting pattern 23ai is the first quantum dot material; or, that in the case where the first networked light-emitting material is formed by networking the first quantum dot material and the first photosensitive material, the material for forming the first initial light-emitting pattern 23ai consists of the first quantum dot material and the first photosensitive material.

[0107] M3: Exposure of the first initial charge carrier injection layer 141i, the first initial charge carrier transport layer 131i and the first initial light-emitting pattern 23ai stacked on top of each other, thereby converting the material of an exposed section of the first initial charge carrier injection layer 141i into a first crosslinked charge carrier injection material, the material of an exposed section of the first initial charge carrier transport layer 131i into a first crosslinked charge carrier transport material, and the material of an exposed section of the first initial light-emitting pattern 23ai into a first crosslinked light-emitting material.

[0108] It is understood that the aforementioned exposed area is therefore an area corresponding to the at least one first light-emitting device 201. In this step, by exposing an area containing the at least one first light-emitting device 201 within the first initial charge carrier injection layer 141i, the first initial charge carrier transport layer 131i, and the first initial light-emitting pattern 23ai, the solubility of the materials of the first initial charge carrier injection layer 141i, the first initial charge carrier transport layer 131i, and the first initial light-emitting pattern 23ai in the area containing the at least one first light-emitting device 201 can be changed.

[0109] This means that, in this case, the section of the first initial charge carrier injection layer 141i in the region where the first light-emitting device 201 is located is transformed into the first crosslinked charge carrier injection material, while the material of the section of the first initial charge carrier injection layer 141i in the remaining area outside the region where the first light-emitting device 201 is located remains unchanged and is still the material from which the first initial charge carrier injection layer 141i is formed. The first crosslinked charge carrier injection material is insoluble in the developer solution (the third solvent), while the material from which the first initial charge carrier injection layer 141i is formed is soluble in the developer solution (the third solvent).

[0110] The section of the first initial charge carrier transport layer 131i in the region where the first light-emitting device 201 is located is transformed into the first crosslinked charge carrier transport material, while the material of the section of the first initial charge carrier transport layer 131i in the remaining region outside the region where the first light-emitting device 201 is located remains unchanged and is still the material from which the first initial charge carrier transport layer 131i is formed. The first crosslinked charge carrier transport material is insoluble in the developer solution (the second solvent), while the material from which the first initial charge carrier transport layer 131i is formed is soluble in the developer solution (the second solvent).

[0111] The portion of the first initial light-emitting pattern 23ai in the region where the first light-emitting device 201 is located is transformed into the first crosslinked light-emitting material, while the material of the portion of the first initial light-emitting pattern 23ai in the remaining area outside the region where the first light-emitting device 201 is located remains unchanged and is still the material from which the first initial light-emitting pattern 23ai is formed. The first crosslinked light-emitting material is insoluble in the developer solution (the first solvent), while the material from which the first initial light-emitting pattern 23ai is formed is soluble in the developer solution (the first solvent).

[0112] It should be noted that, as in Fig. Figure 4 shows that the first initial charge carrier injection layer 141i, the first initial charge carrier transport layer 131i and the first initial light-emitting pattern 23ai are also formed on the side of the pixel definition layer 12 facing away from the base substrate 11. Fig. Figure 4 shows that the thicknesses of the first initial charge carrier injection layer 141i, the first initial charge carrier transport layer 131i and the first initial light-emitting pattern 23ai on the side of the pixel definition layer 12 facing away from the base substrate 11 do not correspond to the thicknesses of the first initial charge carrier injection layer 141i, the first initial charge carrier transport layer 131i and the first initial light-emitting pattern 23ai in the aperture Q of the pixel definition layer 12, but it is only shown schematically here that the first initial charge carrier injection layer 141i, the first initial charge carrier transport layer 131i and the first initial light-emitting pattern 23ai are present on the side of the pixel definition layer 12 facing away from the base substrate 11, and there are no restrictions regarding their thicknesses.

[0113] M4: Developing the first initial charge carrier injection layer 141i, the first initial charge carrier transport layer 131i and the first initial light-emitting pattern 23ai stacked on top of each other, forming the first charge carrier injection layer 141, the first charge carrier transport layer 131 and the first light-emitting pattern 23a stacked on top of each other. For example, M4 can comprise the following three development steps:

[0114] Using the developer solution (the first solvent), the portion of the first initial light-emitting pattern 23ai that lies outside the area where the first light-emitting device 201 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the first initial light-emitting pattern 23ai is formed has residues on a section facing the base substrate 11, forming a first temporary residual layer) is removed, while the portion of the first initial light-emitting pattern 23ai in the area where the first light-emitting device 201 is located is retained, resulting in at least one first light-emitting pattern 23a.

[0115] Using the developer solution (the second solvent), the section of the first initial charge carrier transport layer 131i is removed which lies outside the area in which the first light-emitting component 201 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the first initial charge carrier transport layer 131i is formed has residues on a section facing the base substrate 11, forming a second temporary residue layer).Furthermore, the first temporary residual layer, which lies in the remaining areas of the multiple light-emitting components 20 outside the area where the first light-emitting component 201 is located, is also removed from the first initial charge carrier transport layer 131i, thereby preventing residues of the material from which the first initial light-emitting pattern 23ai is formed in the remaining areas of the multiple light-emitting components 20 outside the area where the first light-emitting component 201 is located. However, the section of the first initial charge carrier transport layer 131i in the area where the first light-emitting component 201 is located is retained, thus obtaining a first charge carrier transport layer 131 of the at least one first light-emitting component 201.

[0116] Using the developer solution (the third solvent), the section of the first initial charge carrier injection layer 141i is removed which lies outside the area in which the first light-emitting component 201 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the first initial charge carrier injection layer 141i is formed has residues on a section facing the base substrate 11, for example, the one in Fig. Figure 4 shows the first initial residual pattern 330. For a description of the first initial residual pattern 330, please refer to the following sections (which will not be explained in detail here). Furthermore, the second temporary residual layer, which lies in the remaining areas of the multiple light-emitting components 20 outside the area where the first light-emitting component 201 is located, is also removed from the first initial charge carrier injection layer 141i. This prevents residues of the material from which the first charge carrier transport layer 131 is formed from remaining in the remaining areas of the multiple light-emitting components 20 outside the area where the first light-emitting component 201 is located.However, the section of the first initial charge carrier injection layer 141i in the area where the first light-emitting device 201 is located is retained, thus obtaining a first charge carrier injection layer 141 of the at least one first light-emitting device 201.

[0117] It should be noted that after the formation of the first light-emitting pattern 23a, the first initial residual pattern 330 is also present on the side of the pixel definition layer 12 facing away from the base substrate 11.

[0118] In comparison to the structuring of quantum dot luminescent materials by direct photolithography in the related technique, by providing a material capable of undergoing a crosslinking reaction under light radiation as the material of two front film layers (namely the first charge carrier transport layer 131 and the first charge carrier injection layer 141), the two front film layers can be used as double sacrificial layers to remove the portion of the first quantum dot material that lies outside the area where the first light-emitting device 201 is located, thus preventing the first quantum dot material from forming residues in the area outside the area where the first light-emitting device 201 is located, and furthermore, the problem of color mixing can be solved.which is caused by residues of the quantum dot phosphor material of the previous color on a side of the light-emitting pattern of the next color facing the base substrate 11 in the related technique. On the other hand, the second temporary residue layer mentioned above is part of the first initial charge carrier transport layer 131i, and the first initial charge carrier transport layer 131i is a film layer in contact with the first initial light-emitting pattern 23ai. The aforementioned step of developing with the developer solution (the third solvent) can therefore prevent the second temporary residue layer from remaining in the remaining areas of the multiple light-emitting devices 20 outside the area where the first light-emitting device 201 is located. In particular, it can prevent the second temporary residue layer from remaining in the areasin which other light-emitting components besides the first light-emitting component 201 are located among the multiple light-emitting components 20. In this way, the problem of color mixing can be further solved, the problem of the impure light emission spectrum avoided, and the performance of the component effectively improved.

[0119] The foregoing provides an exemplary description of the fact that the multiple light-emitting components 20 comprise at least one first light-emitting component 201. The following provides an exemplary description of the fact that the multiple light-emitting components 20 comprise at least one second light-emitting component 202.

[0120] In some embodiments, such as in Fig. 3A- Fig. As shown in Figure 3B, the multiple light-emitting components 20 further comprise at least one second light-emitting component 202, wherein each second light-emitting component 202 of the at least one second light-emitting component 202 comprises a second light-emitting pattern 23b and a second sacrificial layer group 13B provided between the base substrate 11 and the second light-emitting pattern 23b, wherein the second sacrificial layer group 13B comprises a second charge carrier transport layer 132; wherein the material of the second light-emitting pattern 23b comprises a second cross-linked light-emitting material, and the material of the second charge carrier transport layer 132 comprises a second cross-linked charge carrier transport material.

[0121] For example, how in Fig. As shown in Figure 3A, the second sacrificial layer group 13B is a second charge carrier transport layer 132, and the second charge carrier transport layer 132 is contacted with the second light-emitting pattern 23b. It should be noted that the thickness of the second charge carrier transport layer 132 is not restricted here. For example, a first thickness is defined as the sum of the thicknesses of the first charge carrier transport layer 131 and the first charge carrier injection layer 141; relative to the first thickness, the thickness of the second charge carrier transport layer 132 can be less than, equal to, or greater than the first thickness.

[0122] For example, the second light-emitting component 202 can be a light-emitting component that emits green light, and the second quantum dot material can be a green quantum dot luminescent material.

[0123] In some examples, the second crosslinked light-emitting material is generated by crosslinking the second quantum dot material under light irradiation. The second quantum dot material is a crosslinkable organic material. For example, the second quantum dot material comprises a second quantum dot body and a ligand material, where the ligand material is a crosslinkable organic material. That is, by irradiating the second quantum dot material in the region where the second light-emitting device 202 is located, self-crosslinking of the second quantum dot material is achieved, thus forming the second crosslinked light-emitting material. The solubility of the second quantum dot material in a fourth solvent is greater than that of the second crosslinked light-emitting material in the fourth solvent.The development process then takes place, whereby the second cross-linked light-emitting material is insoluble in the developer solution (e.g., the fourth solvent), while the second quantum dot material is soluble in it. This removes the second quantum dot material from the remaining areas outside the region containing the second light-emitting device 202, forming a structured second light-emitting pattern 23b.

[0124] In some other examples, the second cross-linked light-emitting material is generated by cross-linking the second quantum dot material and the fourth photosensitive material under light radiation. That is, by illuminating the second quantum dot material and the fourth photosensitive material in the area where the second light-emitting device 202 is located, cross-linking of the second quantum dot material and the fourth photosensitive material is achieved, thereby forming the second cross-linked light-emitting material. The solubility of the second quantum dot material and the fourth photosensitive material in the fourth solvent is greater than that of the second cross-linked light-emitting material in the fourth solvent. Subsequently, development takes place, whereby the second cross-linked light-emitting material is dissolved in the developer solution (e.g.,the fourth solvent) is insoluble, while the second quantum dot material and the second photosensitive material are soluble in it. This removes the second quantum dot material and the fourth photosensitive material from the remaining areas outside the region where the second light-emitting device 202 is located, forming a structured second light-emitting pattern 23b.

[0125] For example, the fourth solvent is a first-category solvent, wherein the first-category solvent comprises at least one of octane and propylene glycol methyl ether acetate (PMA).

[0126] In some examples, the second crosslinked charge carrier transport material is generated by crosslinking it under light radiation. This second charge carrier transport material is a crosslinkable organic material. That is, by irradiating the second charge carrier transport material in the area where the second light-emitting device 202 is located, self-crosslinking of the second charge carrier transport material is achieved, thus forming the second crosslinked charge carrier transport material. The solubility of the second charge carrier transport material in a fifth solvent is greater than that of the second crosslinked charge carrier transport material in the fifth solvent. Subsequently, development takes place, whereby the second crosslinked charge carrier transport material is insoluble in the developer solution (e.g., the fifth solvent), while the second charge carrier transport material is soluble in it.This removes the second charge carrier transport material in the remaining areas outside the area where the second light-emitting component 202 is located, thus forming a structured second charge carrier transport layer 132.

[0127] In some other examples, the second crosslinked charge carrier transport material is generated by crosslinking the second charge carrier transport material and the fifth photosensitive material under light irradiation. That is, by exposing the second charge carrier transport material and the fifth photosensitive material in the area where the second light-emitting device 202 is located, crosslinking of the second charge carrier transport material and the fifth photosensitive material is achieved, thereby forming the second crosslinked charge carrier transport material. The solubility of the second charge carrier transport material and the fifth photosensitive material in the fifth solvent is greater than that of the second crosslinked charge carrier transport material in the fifth solvent. Subsequently, development takes place, whereby the second crosslinked charge carrier transport material is dissolved in the developer solution (e.g.,the fifth solvent) is insoluble, while the second charge carrier transport material and the fifth photosensitive material are soluble in it. This removes the second charge carrier transport material and the fifth photosensitive material from the remaining areas outside the area where the second light-emitting device 202 is located, thus forming a structured second charge carrier transport layer 132.

[0128] For example, the fifth solvent is a second-category solvent, wherein the second-category solvent comprises at least one of toluene, chlorobenzene, or dichlorotoluene.

[0129] The following describes, by way of example, a method for manufacturing at least one second light-emitting component 202, as in Fig. 5 shown, including N1 to N3.

[0130] N1: Forming a second initial charge carrier transport layer 132i and a second initial light-emitting pattern 23bi successively on a side of the first electrode layer 21a and of the at least one first light-emitting device 201 facing away from the base substrate 11.

[0131] An example of the process for forming the second initial charge carrier transport layer 132i is one of the following processes: centrifugal coating, screen printing, doctor blade coating and droplet coating, and the solution for the process is a fifth solution, wherein its solvent is the fifth solvent and its solute is the material for forming the second initial charge carrier transport layer 132i.It should be noted that in the case where the second crosslinked load carrier transport material is formed by self-crosslinking of the second load carrier transport material, the material for forming the second initial load carrier transport layer 132i is the second load carrier transport material; or that in the case where the second crosslinked load carrier transport material is formed by crosslinking of the second load carrier transport material and the fifth photosensitive material, the material for forming the second initial load carrier transport layer 132i consists of the second load carrier transport material and the fifth photosensitive material.

[0132] An example of the process for forming the second initial light-emitting pattern 23bi is one of the following processes: centrifugal coating, screen printing, doctor blade coating and droplet coating, and the solution for the process is a fourth solution, wherein its solvent is the fourth solvent and its solute is the material for forming the second initial light-emitting pattern 23bi.It should be noted that in the case where the second networked light-emitting material is formed by self-networking of the second quantum dot material, the material for forming the second initial light-emitting pattern 23bi is the second quantum dot material; or, that in the case where the second networked light-emitting material is formed by networking the second quantum dot material and the fourth photosensitive material, the material for forming the second initial light-emitting pattern 23bi consists of the second quantum dot material and the fourth photosensitive material.

[0133] For example, how in Fig. As shown in Figure 5, in a case where the first initial residual pattern 330 remains on a side of the first electrode layer 21a facing away from the base substrate 11, the second initial charge carrier transport layer 132i, which lies on a side of the first electrode layer 21a, is formed on the surface of the first initial residual pattern 330.

[0134] For example, how in Fig. As shown in Figure 5, in a case where the first initial residual pattern 330 remains on a side of the pixel definition layer 12 facing away from the base substrate 11, the second initial charge carrier transport layer 132i, which lies on one side of the pixel definition layer 12, is formed on the surface of the first initial residual pattern 330.

[0135] N2: Exposure of the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi, which are stacked on top of each other, thereby converting the material of an exposed section of the second initial charge carrier transport layer 132i into a second crosslinked charge carrier transport material, and converting the material of an exposed section of the second initial light-emitting pattern 23bi into a second crosslinked light-emitting material.

[0136] It is understood that the aforementioned exposed area is therefore an area corresponding to the at least one second light-emitting component 202. In this step, by exposing an area containing the at least one second light-emitting component 202 within the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi, the solubility of the materials of the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi in the area containing the at least one second light-emitting component 202 can be changed.

[0137] This means that, in this case, the section of the second initial charge carrier transport layer 132i in the region where the second light-emitting device 202 is located is transformed into the second crosslinked charge carrier transport material, while the material of the section of the second initial charge carrier transport layer 132i in the remaining area outside the region where the second light-emitting device 202 is located remains unchanged and is still the material from which the second initial charge carrier transport layer 132i is formed. The first crosslinked charge carrier transport material is insoluble in the developer solution (the fifth solvent), while the material from which the second initial charge carrier transport layer 132i is formed is soluble in the developer solution (the fifth solvent).

[0138] The portion of the second initial light-emitting pattern 23bi in the region where the second light-emitting device 202 is located is transformed into the second crosslinked light-emitting material, while the material of the portion of the second initial light-emitting pattern 23bi in the remaining area outside the region where the second light-emitting device 202 is located remains unchanged and is still the material from which the second initial light-emitting pattern 23bi is formed. The second crosslinked light-emitting material is insoluble in the developer solution (the fourth solvent), while the material from which the second initial light-emitting pattern 23bi is formed is soluble in the developer solution (the fourth solvent).

[0139] It should be noted that, as in Fig. Figure 5 shows that the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi are also formed on the side of the pixel definition layer 12 facing away from the base substrate 11. Fig. Figure 5 shows that the thicknesses of the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi on the side of the pixel definition layer 12 facing away from the base substrate 11 do not correspond to the thicknesses of the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi in the aperture Q of the pixel definition layer 12, but it is only shown schematically here that the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi are present on the side of the pixel definition layer 12 facing away from the base substrate 11, and there are no restrictions regarding their thicknesses.

[0140] N3: Developing the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi stacked on top of each other, forming the second charge carrier transport layer 132 and the second light-emitting pattern 23b stacked on top of each other. For example, N3 can comprise the following two development steps:

[0141] Using the developer solution (the fourth solvent), the portion of the second initial light-emitting pattern 23bi that lies outside the area where the second light-emitting device 202 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the second initial light-emitting pattern 23bi is formed has residues on a section facing the base substrate 11, forming a fourth temporary residual layer) is removed, while the portion of the second initial light-emitting pattern 23bi in the area where the second light-emitting device 202 is located is retained, resulting in at least one second light-emitting pattern 23b.

[0142] Using the developer solution (the fifth solvent), the section of the second initial charge carrier transport layer 132i is removed which lies outside the area in which the second light-emitting component 202 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the second initial charge carrier transport layer 132i is formed has residues on a section facing the base substrate 11, e.g., the one in Fig. Figure 5 shows the second initial residual pattern 350a. For a description of the second initial residual pattern 350a, please refer to the following sections (which will not be discussed in detail here). Furthermore, the fourth temporary residual layer, which lies in the remaining areas of the multiple light-emitting components 20 outside the area where the second light-emitting component 202 is located, is also removed from the second initial charge carrier transport layer 132i. This prevents residues of the material from which the second initial light-emitting pattern 23bi is formed from remaining in the remaining areas of the multiple light-emitting components 20 outside the area where the second light-emitting component 202 is located.However, the section of the second initial charge carrier transport layer 132i in the area where the second light-emitting device 202 is located is retained, thus obtaining a second charge carrier transport layer 132 of the at least one second light-emitting device 202.

[0143] It should be noted that after the formation of the second light-emitting pattern 23b, the second initial residual pattern 350a is also present on the side of the pixel definition layer 12 facing away from the base substrate 11.

[0144] In contrast to the structuring of quantum dot phosphor materials by direct photolithography in the related technique, by providing a material capable of crosslinking under light radiation as the material of the second sacrificial layer group 13B (namely, the second charge carrier transport layer 132), the second sacrificial layer group 13B can be used as a sacrificial layer to remove the portion of the second quantum dot material that lies outside the area where the second light-emitting device 202 is located. This prevents the second quantum dot material from forming residues in the remaining area outside the area where the second light-emitting device 202 is located. In this way, the problem of color mixing caused by residues of the quantum dot phosphor material of the previous color (such as...) can be solved.of the second quantum dot phosphor material) on a side of the light-emitting pattern of the next color (such as the third light-emitting pattern 23c) facing the base substrate 11 in the related technique. On the other hand, the problem of color mixing caused by residues of the quantum dot phosphor material of the next color (such as the second quantum dot phosphor material) on a side of the light-emitting pattern of the previous color (such as the first light-emitting pattern 23a) facing away from the base substrate 11 in the related technique can be solved.

[0145] In some embodiments, such as in Fig. Figure 3B shows a case in which the second light-emitting component 202 comprises a second light-emitting pattern 23b and a second sacrificial layer group 13B, and the second sacrificial layer group 13B comprises a second charge carrier transport layer 132, the second sacrificial layer group 13B further comprises a second charge carrier injection layer 142, wherein the second charge carrier injection layer 142 is located on a side of the second charge carrier transport layer 132 facing the base substrate, and the material of the second charge carrier injection layer 142 comprises a second cross-linked charge carrier injection material.

[0146] For example, how in Fig. As shown in Figure 3B, the second sacrificial layer group 13B consists of a second charge carrier injection layer 142 and a second charge carrier injection layer 142, as well as the second charge carrier injection layer 142, the second charge carrier transport layer 132, and the second light-emitting pattern 23b are sequentially contacted. It should be noted that the thickness of the second charge carrier injection layer 142 is not restricted here. For example, relative to the first thickness, the thickness of the second charge carrier injection layer 142 can be less than, equal to, or greater than the first thickness.

[0147] In some examples, the second crosslinked charge carrier injection material is generated by crosslinking it under light irradiation. The second charge carrier injection material is a crosslinkable organic material. That is, by irradiating the second charge carrier injection material in the area where the second light-emitting device 202 is located, self-crosslinking of the second charge carrier injection material is achieved, thus forming the second crosslinked charge carrier injection material. The solubility of the second charge carrier injection material in a sixth solvent is greater than that of the second crosslinked charge carrier injection material in the sixth solvent. Subsequently, development takes place, whereby the second crosslinked charge carrier injection material is immersed in the developer solution (e.g.,the sixth solvent) is insoluble, while the second charge carrier injection material is soluble in it. This removes the second charge carrier injection material from the remaining areas outside the region where the second light-emitting device 202 is located, forming a structured second charge carrier injection layer 142.

[0148] In some other examples, the second crosslinked charge carrier injection material is generated by crosslinking the second charge carrier injection material and the sixth photosensitive material under light irradiation. That is, by exposing the second charge carrier injection material and the sixth photosensitive material in the area where the second light-emitting device 202 is located, crosslinking of the second charge carrier injection material and the sixth photosensitive material is achieved, thereby forming the second crosslinked charge carrier injection material. The solubility of the second charge carrier injection material and the sixth photosensitive material in the sixth solvent is greater than that of the second crosslinked charge carrier injection material in the sixth solvent. Subsequently, development takes place, whereby the second crosslinked charge carrier injection material is immersed in the developer solution (e.g.,the sixth solvent) is insoluble, while the second charge carrier injection material and the sixth photosensitive material are soluble in it. This removes the second charge carrier injection material and the sixth photosensitive material from the remaining areas outside the region where the second light-emitting device 202 is located, forming a structured second charge carrier injection layer 142.

[0149] For example, the sixth solvent is a third-category solvent, wherein the third-category solvent comprises at least one of water, ethanol, methanol, N,N-dimethylformamide, N-methylformamide and thionyl chloride.

[0150] As in Fig. Figure 6 shows that in a case in which the second sacrificial layer group 13B comprises a second charge carrier transport layer 132 and a second charge carrier injection layer 142, the method for producing at least one second light-emitting component 202, for example N1'-N3', is

[0151] N1': Forming a second initial charge carrier injection layer 142i, a second initial charge carrier transport layer 132i and a second initial light-emitting pattern 23bi successively on a side of the first electrode layer 21a and the at least one first light-emitting device 201 facing away from the base substrate 11.

[0152] Regarding an exemplary description of the formation of the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi, reference is made to the related section N1 above, which is not repeated here.

[0153] An example of the process for forming the second initial charge carrier injection layer 142i is one of the following processes: centrifugal coating, screen printing, doctor blade coating and droplet coating, and the solution for the process is a sixth solution, wherein its solvent is the sixth solvent and its solute is the material for forming the second initial charge carrier injection layer 142i.It should be noted that in the case where the second crosslinked charge carrier injection material is formed by self-crosslinking of the second charge carrier injection material, the material for forming the second initial charge carrier injection layer 142i is the second charge carrier injection material; or that in the case where the second crosslinked charge carrier injection material is formed by crosslinking of the second charge carrier injection material and the sixth photosensitive material, the material for forming the second initial charge carrier injection layer 142i consists of the second charge carrier injection material and the sixth photosensitive material.

[0154] For example, how in Fig. As shown in Figure 6, in a case where the first initial residual pattern 330 remains on a side of the first electrode layer 21a facing away from the base substrate 11, the second initial charge carrier injection layer 142i, which lies on a side of the first electrode layer 21a, is formed on the surface of the first initial residual pattern 330.

[0155] For example, how in Fig. As shown in Figure 6, in a case where the first initial residual pattern 330 remains on a side of the pixel definition layer 12 facing away from the base substrate 11, the second initial charge carrier injection layer 142i, which lies on one side of the pixel definition layer 12, is formed on the surface of the first initial residual pattern 330.

[0156] N2': Exposure of the second initial charge carrier injection layer 142i, the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi stacked on top of each other, thereby converting the material of the exposed section of the second initial charge carrier injection layer 142i into a second crosslinked charge carrier injection material, the material of the exposed section of the second initial charge carrier transport layer 132i into a second crosslinked charge carrier transport material, and the material of the exposed section of the second initial light-emitting pattern 23bi into a second crosslinked light-emitting material.

[0157] It is understood that the aforementioned exposed area is therefore an area corresponding to the at least one second light-emitting component 202. In this step, by exposing an area containing the at least one second light-emitting component 202 within the second initial charge carrier injection layer 142i, the second initial charge carrier transport layer 132i, and the second initial light-emitting pattern 23bi, the solubility of the materials of the second initial charge carrier injection layer 142i, the second initial charge carrier transport layer 132i, and the second initial light-emitting pattern 23bi in the area containing the at least one second light-emitting component 202 can be changed.

[0158] This means that, in this case, the section of the second initial charge carrier injection layer 142i in the region where the second light-emitting device 202 is located is transformed into the second cross-linked charge carrier injection material, while the material of the section of the second initial charge carrier injection layer 142i in the remaining area outside the region where the second light-emitting device 202 is located remains unchanged and is still the material from which the second initial charge carrier injection layer 142i is formed. The second cross-linked charge carrier injection material is insoluble in the developer solution (the sixth solvent), while the material from which the second initial charge carrier injection layer 142i is formed is soluble in the developer solution (the sixth solvent).Regarding an exemplary description of the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi during the exposure process, reference is made to the related section N2 above, which is not repeated here.

[0159] N3': Developing the second initial charge carrier injection layer 142i, the second initial charge carrier transport layer 132i and the second initial light-emitting pattern 23bi stacked on top of each other, forming the second charge carrier injection layer 142, the second charge carrier transport layer 132 and the second light-emitting pattern 23b stacked on top of each other. For example, N3' can comprise the following three development steps:

[0160] Using the developer solution (the fourth solvent), the portion of the second initial light-emitting pattern 23bi that lies outside the area where the second light-emitting device 202 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the second initial light-emitting pattern 23bi is formed has residues on a section facing the base substrate 11, forming a fourth temporary residual layer) is removed, while the portion of the second initial light-emitting pattern 23bi in the area where the second light-emitting device 202 is located is retained, resulting in at least one second light-emitting pattern 23b.

[0161] Using the developer solution (the fifth solvent), the section of the second initial charge carrier transport layer 132i is removed which lies outside the area in which the second light-emitting device 202 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the second initial charge carrier transport layer 132i is formed has residues on a section facing the base substrate 11, forming a fifth temporary residual layer).Furthermore, the fourth temporary residual layer, which lies in the remaining areas of the multiple light-emitting components 20 outside the area where the second light-emitting component 202 is located, is also removed from the second initial charge carrier transport layer 132i, thereby preventing residues of the material from which the second initial light-emitting pattern 23bi is formed in the remaining areas of the multiple light-emitting components 20 outside the area where the second light-emitting component 202 is located. However, the section of the second initial charge carrier transport layer 132i in the area where the second light-emitting component 202 is located is retained, thus obtaining a second charge carrier transport layer 132 of the at least one second light-emitting component 202.

[0162] Using the developer solution (the sixth solvent), the section of the second initial charge carrier injection layer 142i is removed which lies outside the area in which the second light-emitting component 202 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the second initial charge carrier injection layer 142i is formed has residues on a section facing the base substrate 11, e.g., the one in Fig. Figure 6 shows the second initial residual pattern 360b. For a description of the second initial residual pattern 360b, please refer to the following sections (it will not be explained in detail here). Furthermore, the fifth temporary residual layer, which lies in the remaining areas of the multiple light-emitting components 20 outside the area where the second light-emitting component 202 is located, is also removed from the second charge carrier transport layer 132. This prevents residues of the material from which the second charge carrier transport layer 132 is formed from the remaining areas of the multiple light-emitting components 20 outside the area where the second light-emitting component 202 is located.However, the section of the second initial charge carrier injection layer 142i in the area where the second light-emitting device 202 is located is retained, thereby obtaining a second charge carrier injection layer 142 of the at least one second light-emitting device 202.

[0163] It should be noted that after the formation of the second light-emitting pattern 23b, the second initial residual pattern 360b is also present on the side of the pixel definition layer 12 facing away from the base substrate 11.

[0164] In comparison to the structuring of quantum dot luminescent materials by direct photolithography in the related technique, by providing a material that can undergo a crosslinking reaction under light radiation as the material of the second sacrificial layer group 13B (namely the second charge carrier transport layer 132 and the second charge carrier injection layer 142), the second sacrificial layer group 13B can be used as double sacrificial layers to remove the section of the second quantum dot material that lies in the remaining area outside the area in which the second light-emitting device 202 is located, thereby preventing the second quantum dot material from forming residues in the remaining area outside the area in which the second light-emitting device 202 is located.In this way, firstly, the problem of color mixing caused by residues of the quantum dot phosphor material of the previous color (such as the second quantum dot phosphor material) on a side facing the base substrate 11 of the light-emitting pattern of the next color (such as the third light-emitting pattern 23c) in the related technique can be solved; secondly, the problem of color mixing caused by residues of the quantum dot phosphor material of the next color (such as the second quantum dot phosphor material) on a side facing away from the base substrate 11 of the light-emitting pattern of the previous color (such as the first light-emitting pattern 23a) in the related technique can be solved.On the other hand, the fifth temporary residual layer mentioned above is part of the second initial charge carrier transport layer 132i, and the second initial charge carrier transport layer 132i is a film layer that is in contact with the second initial light-emitting pattern 23bi. The aforementioned step of developing with the developer solution (the sixth solvent) can therefore prevent the fifth temporary residual layer from remaining in the other areas of the multiple light-emitting devices 20 outside the area where the second light-emitting device 202 is located. In particular, it can prevent the fifth temporary residual layer from remaining in the areas where other light-emitting devices besides the second light-emitting device 202 are located among the multiple light-emitting devices 20.In this way, the problem of color mixing can be further solved, the problem of the impure light emission spectrum avoided, and the performance of the component effectively improved.

[0165] The foregoing provides an exemplary description of the fact that the multiple light-emitting components 20 comprise at least one second light-emitting component 202. The following provides an exemplary description of the fact that the multiple light-emitting components 20 comprise at least one third light-emitting component 203.

[0166] In some embodiments, such as in Fig. 3A- Fig. As shown in Figure 3B, the multiple light-emitting components 20 further comprise at least one third light-emitting component 203, wherein each third light-emitting component 203 of the at least one third light-emitting component 203 comprises a third light-emitting pattern 23c and a third sacrificial layer group 13C provided between the base substrate 11 and the third light-emitting pattern 23c, wherein the third sacrificial layer group 13C comprises a third charge carrier transport layer 133; wherein the material of the third light-emitting pattern 23c comprises a third cross-linked light-emitting material, and the material of the third charge carrier transport layer 133 comprises a third cross-linked charge carrier transport material.

[0167] For example, how in Fig. As shown in Figure 3A, the third sacrificial layer group 13C is a third charge carrier transport layer 133, and the third charge carrier transport layer 133 is contacted with the third light-emitting pattern 23c. It should be noted that the thickness of the third charge carrier transport layer 133 is not restricted here. For example, relative to the first thickness, the thickness of the third charge carrier transport layer 133 can be less than, equal to, or greater than the first thickness.

[0168] For example, the third light-emitting component 203 can be a light-emitting component that emits blue light, and the third quantum dot material can be a blue quantum dot luminescent material.

[0169] In some examples, the third crosslinked light-emitting material is generated by crosslinking the third quantum dot material under light irradiation. The third quantum dot material is a crosslinkable organic material. For example, the third quantum dot material comprises a third quantum dot body and a ligand material, where the ligand material is a crosslinkable organic material. That is, by irradiating the third quantum dot material in the region where the third light-emitting device 203 is located, self-crosslinking of the third quantum dot material is achieved, thus forming the third crosslinked light-emitting material. The solubility of the third quantum dot material in a seventh solvent is greater than that of the third crosslinked light-emitting material in the seventh solvent.Subsequently, development takes place, whereby the third cross-linked light-emitting material is insoluble in the developer solution (e.g., the seventh solvent), while the third quantum dot material is soluble in it. This removes the third quantum dot material from the remaining areas outside the region where the third light-emitting device 203 is located, forming a structured third light-emitting pattern 23c.

[0170] In some other examples, the third cross-linked light-emitting material is generated by cross-linking the third quantum dot material and the seventh photosensitive material under light radiation. That is, by exposing the third quantum dot material and the seventh photosensitive material in the area where the third light-emitting device 203 is located, cross-linking of the third quantum dot material and the seventh photosensitive material is achieved, thereby forming the third cross-linked light-emitting material. The solubility of the third quantum dot material and the seventh photosensitive material in the seventh solvent is greater than that of the third cross-linked light-emitting material in the seventh solvent. Subsequently, development takes place, whereby the third cross-linked light-emitting material is dissolved in the developer solution (e.g.,the seventh solvent) is insoluble, while the third quantum dot material and the third photosensitive material are soluble in it. This removes the third quantum dot material and the seventh photosensitive material from the remaining areas outside the region where the third light-emitting device 203 is located, forming a structured third light-emitting pattern 23c.

[0171] For example, the seventh solvent is a first-category solvent, wherein the first-category solvent comprises at least one of octane and propylene glycol methyl ether acetate (PMA).

[0172] In some examples, the third crosslinked charge carrier transport material is generated by crosslinking it under light radiation. This third charge carrier transport material is a crosslinkable organic material. That is, by irradiating the third charge carrier transport material in the area where the third light-emitting device 203 is located, self-crosslinking of the third charge carrier transport material is achieved, thus forming the third crosslinked charge carrier transport material. The solubility of the third charge carrier transport material in an eighth solvent is greater than that of the third crosslinked charge carrier transport material in the eighth solvent. Subsequently, development takes place, whereby the third crosslinked charge carrier transport material is insoluble in the developer solution (e.g., the eighth solvent), while the third charge carrier transport material is soluble in it.This removes the third charge carrier transport material in the remaining areas outside the area where the third light-emitting component 203 is located, thus forming a structured third charge carrier transport layer 133.

[0173] In some other examples, the third crosslinked charge carrier transport material is generated by crosslinking the third charge carrier transport material and the eighth photosensitive material under light irradiation. That is, by exposing the third charge carrier transport material and the eighth photosensitive material in the area where the third light-emitting device 203 is located, crosslinking of the third charge carrier transport material and the eighth photosensitive material is achieved, thereby forming the third crosslinked charge carrier transport material. The solubility of the third charge carrier transport material and the eighth photosensitive material in the eighth solvent is greater than that of the third crosslinked charge carrier transport material in the eighth solvent. Subsequently, development takes place, whereby the third crosslinked charge carrier transport material is dissolved in the developer solution (e.g.,the eighth solvent) is insoluble, while the third charge carrier transport material and the eighth photosensitive material are soluble in it. This removes the third charge carrier transport material and the eighth photosensitive material from the remaining areas outside the region where the third light-emitting device 203 is located, thus forming a structured third charge carrier transport layer 133.

[0174] For example, the eighth solvent is a second-category solvent, wherein the second-category solvent includes at least one of toluene, chlorobenzene, or dichlorotoluene.

[0175] The following describes, by way of example, a method for manufacturing at least one third light-emitting component 203, as in Fig. 7 shown, including H1 to H3.

[0176] H1: Forming a third initial charge carrier transport layer 133i and a third initial light-emitting pattern 23ci successively on a side of the first electrode layer 21a, of the at least one first light-emitting device 201 and of the at least one second light-emitting device 202 facing away from the base substrate 11.

[0177] An example of the process for forming the third initial charge carrier transport layer 133i is one of the following processes: centrifugal coating, screen printing, doctor blade coating and droplet coating, and the solution for the process is an eighth solution, wherein its solvent is the eighth solvent and its solute is the material for forming the third initial charge carrier transport layer 133i.It should be noted that in the case where the third crosslinked load carrier transport material is formed by self-crosslinking of the third load carrier transport material, the material for forming the third initial load carrier transport layer 133i is the third load carrier transport material; or, that in the case where the third crosslinked load carrier transport material is formed by crosslinking of the third load carrier transport material and the eighth photosensitive material, the material for forming the third initial load carrier transport layer 133i consists of the third load carrier transport material and the eighth photosensitive material.

[0178] An example of the process for forming the third initial light-emitting pattern 23ci is one of the following processes: centrifugal coating, screen printing, doctor blade coating and droplet coating, and the solution for the process is a seventh solution, wherein its solvent is the seventh solvent and its solute is the material for forming the third initial light-emitting pattern 23ci.It should be noted that in the case where the third networked light-emitting material is formed by self-networking of the third quantum dot material, the material for forming the third initial light-emitting pattern 23ci is the third quantum dot material; or, that in the case where the third networked light-emitting material is formed by networking the third quantum dot material and the seventh photosensitive material, the material for forming the third initial light-emitting pattern 23ci consists of the third quantum dot material and the seventh photosensitive material.

[0179] For example, how in Fig. As shown in Figure 7, in a case where the second initial residual pattern 350a remains on a side of the first electrode layer 21a and the at least one first light-emitting device 201 facing away from the base substrate 11, the third initial charge carrier transport layer 133i, which lies on a side of the first electrode layer 21a and the at least one first light-emitting device 201, is formed on the surface of the second initial residual pattern 350a.

[0180] For example, how in Fig. As shown in Figure 7, in a case where the second initial residual pattern 350a remains on a side of the pixel definition layer 12 facing away from the base substrate 11, the third initial charge carrier transport layer 133i, which lies on one side of the pixel definition layer 12, is formed on the surface of the second initial residual pattern 350a.

[0181] H2: Exposure of the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci, which are stacked on top of each other, thereby converting the material of an exposed section of the third initial charge carrier transport layer 133i into a third cross-linked charge carrier transport material, and converting the material of an exposed section of the third initial light-emitting pattern 23ci into a third cross-linked light-emitting material.

[0182] It is understood that the aforementioned exposed area is therefore an area corresponding to the at least one third light-emitting component 203. In this step, by exposing an area containing the at least one third light-emitting component 203 within the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci, the solubility of the materials of the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci in the area containing the at least one third light-emitting component 203 can be changed.

[0183] This means that, in this case, the section of the third initial charge carrier transport layer 133i in the region where the third light-emitting device 203 is located is transformed into the third crosslinked charge carrier transport material, while the material of the section of the third initial charge carrier transport layer 133i in the remaining area outside the region where the third light-emitting device 203 is located remains unchanged and is still the material from which the third initial charge carrier transport layer 133i is formed. The first crosslinked charge carrier transport material is insoluble in the developer solution (the eighth solvent), while the material from which the third initial charge carrier transport layer 133i is formed is soluble in the developer solution (the eighth solvent).

[0184] The portion of the third initial light-emitting pattern 23ci in the region where the third light-emitting device 203 is located is transformed into the third crosslinked light-emitting material, while the material of the portion of the third initial light-emitting pattern 23ci in the remaining area outside the region where the third light-emitting device 203 is located remains unchanged and is still the material from which the third initial light-emitting pattern 23ci is formed. The third crosslinked light-emitting material is insoluble in the developer solution (the seventh solvent), while the material from which the third initial light-emitting pattern 23ci is formed is soluble in the developer solution (the seventh solvent).

[0185] It should be noted that, as in Fig. Figure 7 shows that the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci are also formed on the side of the pixel definition layer 12 facing away from the base substrate 11. Fig. Figure 7 shows that the thicknesses of the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci on the side of the pixel definition layer 12 facing away from the base substrate 11 do not correspond to the thicknesses of the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci in the aperture Q of the pixel definition layer 12, but it is only shown schematically here that the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci are present on the side of the pixel definition layer 12 facing away from the base substrate 11, and there are no restrictions regarding their thicknesses.

[0186] H3: Developing the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci stacked on top of each other, forming the third charge carrier transport layer 133 and the third light-emitting pattern 23c stacked on top of each other. H3 can, for example, comprise the following two development steps:

[0187] Using the developer solution (the seventh solvent), the portion of the third initial light-emitting pattern 23ci that lies outside the area where the third light-emitting device 203 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the third initial light-emitting pattern 23ci is formed has residues on a section facing the base substrate 11, forming a seventh temporary residual layer) is removed, while the portion of the third initial light-emitting pattern 23ci in the area where the third light-emitting device 203 is located is retained, resulting in at least one third light-emitting pattern 23c.

[0188] Using the developer solution (the eighth solvent), the section of the third initial charge carrier transport layer 133i is removed which lies outside the area in which the third light-emitting component 203 is located in the remaining areas of the several light-emitting devices 20 (the material from which the third initial charge carrier transport layer 133i is formed has residues on a section facing the base substrate 11, e.g., the one in Fig. Figure 7 shows the third initial residual pattern 380a. For a description of the third initial residual pattern 380a, please refer to the following sections (it will not be explained in detail here). Furthermore, the seventh temporary residual layer, which lies in the remaining areas of the multiple light-emitting components 20 outside the area where the third light-emitting component 203 is located, is also removed from the third initial charge carrier transport layer 133i. This prevents residues of the material from which the third initial light-emitting pattern 23ci is formed from remaining material in the remaining areas of the multiple light-emitting components 20 outside the area where the third light-emitting component 203 is located.However, the section of the third initial charge carrier transport layer 133i in the area where the third light-emitting component 203 is located is retained, thereby obtaining a third charge carrier transport layer 133 of the at least one third light-emitting component 203.

[0189] It should be noted that after the formation of the third light-emitting pattern 23c, the third initial residual pattern 380a is also present on the side of the pixel definition layer 12 facing away from the base substrate 11.

[0190] In contrast to the structuring of quantum dot phosphor materials by direct photolithography in the related technique, by providing a material capable of crosslinking under light radiation as the material of the third sacrificial layer group 13C (namely, the third charge carrier transport layer 133), the third sacrificial layer group 13C can be used as a sacrificial layer to remove the portion of the third quantum dot material that lies in the remaining area outside the region where the third light-emitting device 203 is located. This prevents the third quantum dot material from forming residues in the remaining area outside the region where the third light-emitting device 203 is located. In this way, the problem of color mixing caused by residues of the quantum dot phosphor material of the next color (such as...) can be solved.of the third quantum dot luminescent material) on a side of the light-emitting pattern of the previous color (such as the first light-emitting pattern 23a, the second light-emitting pattern 23b) facing away from the base substrate 11 in the related technique.

[0191] In some embodiments, such as in Fig. Figure 3B shows a case in which the third light-emitting component 203 comprises a third light-emitting pattern 23c and a third sacrificial layer group 13C, and the third sacrificial layer group 13C comprises a third charge carrier transport layer 133, the third sacrificial layer group 13C further comprises a third charge carrier injection layer 143; wherein the third charge carrier injection layer 143 is located on a side of the third charge carrier transport layer 133 facing the base substrate 11, and the material of the third charge carrier injection layer 143 comprises a third cross-linked charge carrier injection material.

[0192] For example, how in Fig. As shown in Figure 3B, the third sacrificial layer group 13C consists of a third charge carrier injection layer 143 and a third charge carrier injection layer 143, as well as the third charge carrier injection layer 143, the third charge carrier transport layer 133, and the third light-emitting pattern 23c, which are sequentially contacted. It should be noted that the thickness of the third charge carrier injection layer 143 is not restricted here. For example, relative to the first thickness, the thickness of the third charge carrier injection layer 143 can be less than, equal to, or greater than the first thickness.

[0193] In some examples, the third crosslinked charge carrier injection material is generated by crosslinking it under light radiation. This third charge carrier injection material is a crosslinkable organic material. That is, by illuminating the third charge carrier injection material in the area where the third light-emitting device 203 is located, self-crosslinking of the third charge carrier injection material is achieved, thus forming the third crosslinked charge carrier injection material. The solubility of the third charge carrier injection material in a ninth solvent is greater than that of the third crosslinked charge carrier injection material in the ninth solvent. Subsequently, development takes place, whereby the third crosslinked charge carrier injection material is immersed in the developer solution (e.g.,the ninth solvent) is insoluble, while the third charge carrier injection material is soluble in it. This removes the third charge carrier injection material from the remaining areas outside the region where the third light-emitting device 203 is located, forming a structured third charge carrier injection layer 143.

[0194] In some other examples, the third crosslinked charge carrier injection material is generated by crosslinking the third charge carrier injection material and the ninth photosensitive material under light irradiation. That is, by exposing the third charge carrier injection material and the ninth photosensitive material in the area where the third light-emitting device 203 is located, crosslinking of the third charge carrier injection material and the ninth photosensitive material is achieved, thereby forming the third crosslinked charge carrier injection material. The solubility of the third charge carrier injection material and the ninth photosensitive material in the ninth solvent is greater than that of the third crosslinked charge carrier injection material in the ninth solvent. Subsequently, development takes place, whereby the third crosslinked charge carrier injection material is dissolved in the developer solution (e.g.,the ninth solvent) is insoluble, while the third charge carrier injection material and the ninth photosensitive material are soluble in it. This removes the third charge carrier injection material and the ninth photosensitive material from the remaining areas outside the region where the third light-emitting device 203 is located, forming a structured third charge carrier injection layer 143.

[0195] For example, the ninth solvent is a third-category solvent, wherein the third-category solvent comprises at least one of water, ethanol, methanol, H,H-dimethylformamide, H-methylformamide and thionyl chloride.

[0196] As in Fig. Figure 8 shows that in a case in which the third sacrificial layer group 13C comprises a third charge carrier transport layer 133 and a third charge carrier injection layer 143, the method for producing at least one third light-emitting component 203, for example H1'-H3', is

[0197] H1': Forming a third initial charge carrier injection layer 143i, a third initial charge carrier transport layer 133i and a third initial light-emitting pattern 23ci successively on a side of the first electrode layer 21a, the at least one first light-emitting device 201 and the at least one second light-emitting device 202 facing away from the base substrate 11.

[0198] Regarding an exemplary description of the formation of the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci, reference is made to the related section H1 above, which is not repeated here.

[0199] An example of the process for forming the third initial charge carrier injection layer 143i is one of the following processes: centrifugal coating, screen printing, doctor blade coating and droplet coating, and the solution for the process is a ninth solution, wherein its solvent is the ninth solvent and its solute is the material for forming the third initial charge carrier injection layer 143i.It should be noted that in the case where the third crosslinked charge carrier injection material is formed by self-crosslinking of the third charge carrier injection material, the material for forming the third initial charge carrier injection layer 143i is the third charge carrier injection material; or that in the case where the third crosslinked charge carrier injection material is formed by crosslinking of the third charge carrier injection material and the ninth photosensitive material, the material for forming the third initial charge carrier injection layer 143i consists of the third charge carrier injection material and the ninth photosensitive material.

[0200] For example, how in Fig. As shown in Figure 8, in a case where the second initial residual pattern 360b remains on a side of the first electrode layer 21a and the at least one first light-emitting device 201 facing away from the base substrate 11, the third initial charge carrier injection layer 143i, which lies on a side of the first electrode layer 21a and the at least one first light-emitting device 201, is formed on the surface of the second initial residual pattern 360b.

[0201] For example, how in Fig. As shown in Figure 8, in a case where the second initial residual pattern 360b remains on a side of the pixel definition layer 12 facing away from the base substrate 11, the third initial charge carrier injection layer 143i, which lies on one side of the pixel definition layer 12, is formed on the surface of the second initial residual pattern 360b.

[0202] H2': Exposure of the third initial charge carrier injection layer 143i, the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci stacked on top of each other, thereby converting the material of an exposed section of the third initial charge carrier injection layer 143i into a third crosslinked charge carrier injection material, the material of an exposed section of the third initial charge carrier transport layer 133i into a third crosslinked charge carrier transport material, and the material of an exposed section of the third initial light-emitting pattern 23ci into a third crosslinked light-emitting material.

[0203] It is understood that the aforementioned exposed area is therefore an area corresponding to the at least one third light-emitting component 203. In this step, by exposing an area containing the at least one third light-emitting component 203 within the third initial charge carrier injection layer 143i, the third initial charge carrier transport layer 133i, and the third initial light-emitting pattern 23ci, the solubility of the materials of the third initial charge carrier injection layer 143i, the third initial charge carrier transport layer 133i, and the third initial light-emitting pattern 23ci in the area containing the at least one third light-emitting component 203 can be changed.

[0204] This means that, in this case, the section of the third initial charge carrier injection layer 143i in the region where the third light-emitting device 203 is located is transformed into the third cross-linked charge carrier injection material, while the material of the section of the third initial charge carrier injection layer 143i in the remaining area outside the region where the third light-emitting device 203 is located remains unchanged and is still the material from which the third initial charge carrier injection layer 143i is formed. The third cross-linked charge carrier injection material is insoluble in the developer solution (the ninth solvent), while the material from which the third initial charge carrier injection layer 143i is formed is soluble in the developer solution (the ninth solvent).Regarding an exemplary description of the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci during the exposure process, reference is made to the related section H2 above, which is not repeated here.

[0205] H3': Developing the third initial charge carrier injection layer 143i, the third initial charge carrier transport layer 133i and the third initial light-emitting pattern 23ci stacked on top of each other, forming the third charge carrier injection layer 143, the third charge carrier transport layer 133 and the third light-emitting pattern 23c stacked on top of each other. For example, H3' can comprise the following three development steps:

[0206] Using the developer solution (the seventh solvent), the portion of the third initial light-emitting pattern 23ci that lies outside the area where the third light-emitting device 203 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the third initial light-emitting pattern 23ci is formed has residues on a section facing the base substrate 11, forming a seventh temporary residual layer) is removed, while the portion of the third initial light-emitting pattern 23ci in the area where the third light-emitting device 203 is located is retained, resulting in at least one third light-emitting pattern 23c.

[0207] Using the developer solution (the eighth solvent), the section of the third initial charge carrier transport layer 133i is removed, which lies outside the area in which the third light-emitting component 203 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the third initial charge carrier transport layer 133i is formed has residues on a section facing the base substrate 11, forming an eighth temporary residual layer).Furthermore, the seventh temporary residual layer, which lies in the remaining areas of the multiple light-emitting components 20 outside the area where the third light-emitting component 203 is located, is also removed from the third initial charge carrier transport layer 133i, thereby preventing residues of the material from which the third initial light-emitting pattern 23ci is formed in the remaining areas of the multiple light-emitting components 20 outside the area where the third light-emitting component 203 is located. However, the section of the third initial charge carrier transport layer 133i in the area where the third light-emitting component 203 is located is retained, thus obtaining a third charge carrier transport layer 133 of the at least one third light-emitting component 203.

[0208] Using the developer solution (the ninth solvent), the section of the third initial charge carrier injection layer 143i is removed which lies outside the area in which the third light-emitting component 203 is located in the remaining areas of the multiple light-emitting devices 20 (the material from which the third initial charge carrier injection layer 143i is formed has residues on a section facing the base substrate 11, e.g., the one in Fig. Figure 8 shows the third initial residual pattern 390b. For a description of the third initial residual pattern 390b, please refer to the following sections (which will not be explained in detail here). Furthermore, the eighth temporary residual layer, which lies in the remaining areas of the multiple light-emitting components 20 outside the area where the third light-emitting component 203 is located, is also removed from the third charge carrier transport layer 133. This prevents residues of the material from which the third charge carrier transport layer 133 is formed from remaining in the remaining areas of the multiple light-emitting components 20 outside the area where the third light-emitting component 203 is located.However, the section of the third initial charge carrier injection layer 143i in the area where the third light-emitting device 203 is located is retained, thereby obtaining a third charge carrier injection layer 143 of the at least one third light-emitting device 203.

[0209] It should be noted that after the formation of the third light-emitting pattern 23c, the third initial residual pattern 390b is also present on the side of the pixel definition layer 12 facing away from the base substrate 11.

[0210] In comparison to the structuring of quantum dot phosphor materials by direct photolithography in the related technique, by providing a material capable of crosslinking under light radiation as the material of the third sacrificial layer group 13C (namely the third charge carrier transport layer 133 and the third charge carrier injection layer 143), the third sacrificial layer group 13C can be used as double sacrificial layers to remove the portion of the third quantum dot material that lies outside the area where the third light-emitting device 203 is located. This prevents the third quantum dot material from forming residues in the remaining area outside the area where the third light-emitting device 203 is located. In this way, the problem of color mixing caused by residues of the quantum dot phosphor material of the next color (such as yellow, yellow, and black) can be solved.B. of the third quantum dot phosphor material) on a side of the light-emitting pattern of the previous color (such as the first light-emitting pattern 23a, the second light-emitting pattern 23b) facing away from the base substrate 11 in the related technique. On the other hand, the eighth temporary residual layer mentioned above is part of the third initial charge carrier transport layer 133i, and the third initial charge carrier transport layer 133i is a film layer that is in contact with the third initial light-emitting pattern 23ci. The aforementioned step of developing with the developer solution (the ninth solvent) can therefore prevent the eighth temporary residual layer from remaining in the other areas of the multiple light-emitting devices 20 outside the area where the third light-emitting device 203 is located.In particular, this prevents the eighth temporary residual layer from remaining in areas where other light-emitting components besides the third light-emitting component 203 are located among the multiple light-emitting components 20. In this way, the problem of color mixing can be further solved, the problem of an impure light emission spectrum avoided, and the performance of the component effectively improved.

[0211] In some embodiments, the first charge carrier transport layer 131, the second charge carrier transport layer 132, and the third charge carrier transport layer 133 are hole transport layers, and the first charge carrier injection layer 141, the second charge carrier injection layer 142, and the third charge carrier injection layer 143 are hole injection layers. The first electrode 21 is an anode, and the second electrode 22 is a cathode. The first light-emitting device 201 is a "positive" light-emitting device. In this case, the front film layer of the hole injection layer is the anode, and the anode, produced by magnetron sputtering, exhibits high density and is insoluble in organic solvents. This improves the stability of the "positive" light-emitting device compared to development by immersion in solvent during the manufacturing process.

[0212] In some other embodiments, the first charge carrier transport layer 131, the second charge carrier transport layer 132, and the third charge carrier transport layer 133 are electron transport layers, and the first charge carrier injection layer 141, the second charge carrier injection layer 142, and the third charge carrier injection layer 143 are electron injection layers. The first electrode 21 is a cathode and the second electrode 22 is an anode. The first light-emitting device 201 is an "inverted" light-emitting device.

[0213] In some embodiments, such as in Fig. 3A- Fig. As shown in Figure 3B, the at least one first light-emitting component 201 is configured to emit light with a first wavelength; for example, the light with the first wavelength is red light. Each first light-emitting component 201 of the at least one first light-emitting component 201 further comprises a first pattern layer 71 and a second pattern layer 72, wherein the first pattern layer 71 is arranged on a side of the first light-emitting pattern 23a facing away from the base substrate 11, and the second pattern layer 72 is arranged on a side of the first pattern layer 71 facing away from the base substrate 11, wherein the first light-emitting pattern 23a, the first pattern layer 71 and the second pattern layer 72 are sequentially contacted.

[0214] An example is how in Fig. As shown in Figure 5, in the case where the second sacrificial layer group 13B is a second charge carrier transport layer 132, the first pattern layer 71 is a second initial residual pattern 350a, which is formed after the development of the second initial charge carrier transport layer 132i in the region where the first light-emitting device 201 is located. Therefore, the material for forming the first pattern layer 71 is the same as that of the second initial residual pattern 350a. Furthermore, because, as in Fig. 5 and Fig. As shown in Figure 7, the section in the second initial charge carrier transport layer 132i, which corresponds to the first pattern layer 71, is not exposed during the fabrication of at least one second light-emitting component 202 and at least one third light-emitting component 203, the material of the first pattern layer 71 is also the same as that of the second initial charge carrier transport layer 132i.

[0215] That is, in a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material under light radiation, the material of the first pattern layer 71 comprises the second charge carrier transport material. In a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material and a fifth photosensitive material under light radiation, the material of the first pattern layer 71 comprises the second charge carrier transport material and the fifth photosensitive material.

[0216] The second initial charge carrier transport layer 132i in the region where the second light-emitting device 202 is located is exposed and developed, and a second charge carrier transport layer 132 of the second light-emitting device 202 is formed thereafter, while the second initial charge carrier transport layer 132i, which is located in the region where the first light-emitting device 201 is located, is washed out during the development process, forming a second initial residual pattern 350a. Therefore, the thickness d11 of the second initial residual pattern 350a is less than the thickness d12 of the second charge carrier transport layer 132. Consequently, the thickness of the first pattern layer 71 (which is equal to the thickness d11 of the second initial residual pattern 350a) is less than the thickness d12 of the second charge carrier transport layer 132.

[0217] An example is how in Fig. As shown in Figure 6, in the case where the second sacrificial layer group 13B comprises a second charge carrier transport layer 132 and a second charge carrier injection layer 142, the first pattern layer 71 is a second initial residual pattern 360b, which is formed after the development of the second initial charge carrier injection layer 142i in the region where the first light-emitting device 201 is located. Therefore, the material for forming the first pattern layer 71 is the same as that of the second initial residual pattern 360b. Furthermore, because, as in Fig. 6 and Fig. As shown in Figure 8, the section in the second initial charge carrier injection layer 142i, which corresponds to the first pattern layer 71, is not exposed during the fabrication of at least one second light-emitting device 202 and at least one third light-emitting device 203, the material of the first pattern layer 71 is also the same as that of the second initial charge carrier injection layer 142i.

[0218] That is, in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material under light radiation, the material of the first pattern layer 71 comprises the second charge carrier injection material. In a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material and a sixth photosensitive material under light radiation, the material of the first pattern layer 71 comprises the second charge carrier injection material and the sixth photosensitive material.

[0219] The second initial charge carrier injection layer 142i in the region where the second light-emitting device 202 is located is exposed and developed, and a second charge carrier injection layer 142 of the second light-emitting device 202 is formed thereafter, while the second initial charge carrier injection layer 142i, which is located in the region where the first light-emitting device 201 is located, is washed away during the development process, forming a second initial residual pattern 360b. Therefore, the thickness d13 of the second initial residual pattern 360b is smaller than the thickness d14 of the second charge carrier injection layer 142. Consequently, the thickness of the first pattern layer 71 (which is equal to the thickness d13 of the second initial residual pattern 360b) is smaller than the thickness d14 of the second charge carrier injection layer 142.

[0220] An example is how in Fig. Figure 7 shows that, in the case where the third sacrificial layer group 13C is a third charge carrier transport layer 133, the second pattern layer 72 is a third initial residual pattern 380a, which is formed after the development of the third initial charge carrier transport layer 133i in the region where the first light-emitting device 201 is located. Therefore, the material for forming the second pattern layer 72 is the same as that of the third initial residual pattern 380a. Furthermore, because, as in Fig. As shown in Figure 7, the section in the third initial charge carrier transport layer 133i, which corresponds to the third initial residual pattern 380a, is not exposed during the fabrication of at least one third light-emitting component 203, and the material of the second pattern layer 72 is also the same as that of the third initial charge carrier transport layer 133i.

[0221] That is, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, the material of the second pattern layer 72 comprises the third charge carrier transport material. In a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, the material of the second pattern layer 72 comprises the third charge carrier transport material and the eighth photosensitive material.

[0222] The third initial charge carrier transport layer 133i in the region where the third light-emitting device 203 is located is exposed and developed, and a third charge carrier transport layer 133 of the third light-emitting device 203 is formed thereafter, while the third initial charge carrier transport layer 133i, which is located in the region where the first light-emitting device 201 is located, is washed out during the development process, forming a third initial residual pattern 380a. Therefore, the thickness d21 of the third initial residual pattern 380a is smaller than the thickness d22 of the third charge carrier transport layer 133. Consequently, the thickness of the second pattern layer 72 (which is equal to the thickness d21 of the third initial residual pattern 380a) is smaller than the thickness d22 of the third charge carrier transport layer 133.

[0223] It should be noted that if the second sacrificial layer group 13B is the second charge carrier transport layer 132 and the third sacrificial layer group 13C is the third charge carrier transport layer 133, if the second charge carrier transport material of the first pattern layer 71 and the third charge carrier transport material of the second pattern layer 72 are identical, and if the fifth photosensitive material of the first pattern layer 71 and the eighth photosensitive material of the second pattern layer 72 are identical, then in the area where the first light-emitting component 201 is located, the materials of the first pattern layer 71 and the second pattern layer 72 are the same, the first pattern layer 71 and the second pattern layer 72 can be considered as one layer, and the thickness of this layer is (d11+d21).

[0224] It is to be understood that, as in Fig. Figure 3A shows that if the second charge carrier transport layer 132 and the third charge carrier transport layer 133 are hole transport layers, in the area where the first light-emitting device 201 is located, the first pattern layer 71 and the second pattern layer 72 can serve as electron barrier layers of the first light-emitting device 201 to improve the electron injection of the first light-emitting device 201 and increase the efficiency of the light-emitting device 20.

[0225] An example is how in Fig. As shown in Figure 8, in the case where the third sacrificial layer group 13C comprises a third charge carrier transport layer 133 and a third charge carrier injection layer 143, the second pattern layer 72 is a third initial residual pattern 390b, which is formed after the development of the third initial charge carrier injection layer 143i in the region where the first light-emitting device 201 is located. Therefore, the material for forming the second pattern layer 72 is the same as that of the third initial residual pattern 390b. Furthermore, because, as in Fig. As shown in Figure 8, the section in the third initial charge carrier injection layer 143i, which corresponds to the third initial residual pattern 390b, is not exposed during the fabrication of at least one third light-emitting device 203, and the material of the second pattern layer 72 is also the same as that of the third initial charge carrier injection layer 143i.

[0226] That is, in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, the material of the second pattern layer 72 comprises the third charge carrier injection material. In a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, the material of the second pattern layer 72 comprises the third charge carrier injection material and the ninth photosensitive material.

[0227] The third initial charge carrier injection layer 143i in the region where the third light-emitting device 203 is located is exposed and developed, and a third charge carrier injection layer 143 of the third light-emitting device 203 is formed thereafter, while the third initial charge carrier injection layer 143i, which is located in the region where the first light-emitting device 201 is located, is washed away during the development process, forming a third initial residual pattern 390b. Therefore, the thickness d23 of the third initial residual pattern 390b is less than the thickness d24 of the third charge carrier injection layer 143. Consequently, the thickness of the second pattern layer 72 (which is equal to the thickness d23 of the third initial residual pattern 390b) is less than the thickness d24 of the third charge carrier injection layer 143.

[0228] It should be noted that if the second sacrificial layer group 13B consists of the second charge carrier transport layer 132 and the second charge carrier injection layer 142, and the third sacrificial layer group 13C consists of the third charge carrier transport layer 133 and the third charge carrier injection layer 143, if the second charge carrier injection material of the first pattern layer 71 and the third charge carrier injection material of the second pattern layer 72 are identical, and if the sixth photosensitive material of the first pattern layer 71 and the ninth photosensitive material of the second pattern layer 72 are identical, then in the area where the first light-emitting component 201 is located, the materials of the first pattern layer 71 and the second pattern layer 72 are the same, the first pattern layer 71 and the second pattern layer 72 can be considered as one layer, and the thickness of this layer is (d13+d23).

[0229] It is to be understood that, as in Fig. Figure 3B shows that if the second charge carrier injection layer 142 and the third charge carrier injection layer 143 are hole injection layers, in the area where the first light-emitting device 201 is located, the first pattern layer 71 and the second pattern layer 72 can serve as electron barrier layers of the first light-emitting device 201 to improve the electron injection of the first light-emitting device 201 and increase the efficiency of the light-emitting device 20.

[0230] For example, because the difference between the HOMO (Highest Occupied Molecular Orbital) energy level of the red, green, and blue quantum dot phosphor materials and the HOMO energy level of the charge carrier transport material increases, the hole injection capability behaves as follows: red light-emitting device R > green light-emitting device G > blue light-emitting device B, and the electron injection capability behaves as follows: red light-emitting device R = green light-emitting device G > blue light-emitting device B. The electron injection capability of the red light-emitting device R is greater than the hole injection capability of the red light-emitting device R.Therefore, if the at least one first light-emitting component 201 is configured to emit light with a first wavelength, and the light of the first wavelength is red light, as in . Fig. 3A- Fig. As shown in Figure 3B, the first pattern layer 71 and the second pattern layer 72, which remain on the side of the first light-emitting device 201 facing away from the base substrate 11, can effectively block the injection of electrons, so that the transfer of charge carriers (including electrons and holes) of the first light-emitting device 201 (the red light-emitting device R) can be more balanced, which contributes to improving the external quantum efficiency of the light-emitting device 20.

[0231] In some embodiments, as in Fig. 3A- Fig. Figure 3B shows that the at least one second light-emitting device 202 is configured to emit light with a second wavelength; by way of example, the light with the second wavelength is green light. The at least one second light-emitting device 202 further comprises a third pattern layer 73 and a fourth pattern layer 74, wherein the third pattern layer 73 is arranged on a side of the second sacrificial layer group 13B facing the base substrate 11, and the fourth pattern layer 74 is arranged on a side of the second light-emitting pattern 23b facing away from the base substrate 11, wherein the third pattern layer 73, the second sacrificial layer group 13B, the second light-emitting pattern 23b and the fourth pattern layer 74 are sequentially contacted.

[0232] For example, how in Fig. As shown in Figure 4, the third pattern layer 73 is formed by subjecting the first initial residual pattern 330, which is formed after the development of the first initial charge carrier injection layer 141i in the region where the second light-emitting device 202 is located, to exposure (exposure of the second light-emitting device 202). Therefore, the third pattern layer 73 consists of the same material as the first charge carrier injection layer 141i, namely the first crosslinked charge carrier injection material.

[0233] The first initial charge carrier injection layer 141i in the region where the first light-emitting device 201 is located is exposed and developed, and a first charge carrier injection layer 141 of the first light-emitting device 201 is formed, while the first initial charge carrier injection layer 141i in the region where the second light-emitting device 202 is located is washed away during the development process, forming a first initial residual pattern 330. Therefore, the thickness d31 of the first initial residual pattern 330 is less than the thickness d32 of the first charge carrier injection layer 141. Consequently, the thickness of the third pattern layer 73 (which is equal to the thickness d31 of the first initial residual pattern 330) is less than the thickness d32 of the first charge carrier injection layer 141.

[0234] It is to be understood that, as in Fig. 3B shown, in the area where the second light-emitting device 202 is located, because the third pattern layer 73 is the first initial residual pattern 330 formed after the development of the first initial charge carrier injection layer 141i, the third pattern layer 73 can serve as at least part of the hole injection layer of the second light-emitting device 202 to improve the hole injection of the second light-emitting device 202 and increase the efficiency of the light-emitting device 20.

[0235] An example is how in Fig. Figure 7 shows that, in the case where the third sacrificial layer group 13C is a third charge carrier transport layer 133, the fourth pattern layer 74 is a third initial residual pattern 380a, which is formed after the development of the third initial charge carrier transport layer 133i in the region where the second light-emitting device 202 is located. Therefore, the material for forming the fourth pattern layer 74 is the same as that of the third initial residual pattern 380a. Furthermore, because, as in Fig. As shown in Figure 7, the section in the third initial charge carrier transport layer 133i, which corresponds to the third initial residual pattern 380a, is not exposed during the fabrication of at least one third light-emitting component 203, and the material of the fourth pattern layer 74 is also the same as that of the third initial charge carrier transport layer 133i.

[0236] That is, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, the material of the fourth pattern layer 74 comprises the third charge carrier transport material. In a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, the material of the fourth pattern layer 74 comprises the third charge carrier transport material and the eighth photosensitive material.

[0237] The third initial charge carrier transport layer 133i in the region where the third light-emitting device 203 is located is exposed and developed, and a third charge carrier transport layer 133 of the third light-emitting device 203 is formed thereafter, while the third initial charge carrier transport layer 133i in the region where the second light-emitting device 202 is located is washed out during the development process, forming a third initial residual pattern 380a. Therefore, the thickness d21 of the third initial residual pattern 380a is smaller than the thickness d22 of the third charge carrier transport layer 133. Consequently, the thickness of the fourth pattern layer 74 (which is equal to the thickness d21 of the third initial residual pattern 380a) is smaller than the thickness d22 of the third charge carrier transport layer 133.

[0238] It is to be understood that, as in Fig. Figure 3A shows that if the third charge carrier transport layer 133 is a hole transport layer, in the area where the second light-emitting device 202 is located, the fourth pattern layer 74 can serve as an electron barrier layer of the second light-emitting device 202 to improve the electron injection of the second light-emitting device 202 and increase the efficiency of the light-emitting device 20.

[0239] An example is how in Fig. As shown in Figure 8, in the case where the third sacrificial layer group 13C comprises a third charge carrier transport layer 133 and a third charge carrier transport layer 143, the fourth pattern layer 74 is a third initial residual pattern 390b, which is formed after development of the third initial charge carrier injection layer 143i in the region where the second light-emitting device 202 is located. Therefore, the material for forming the fourth pattern layer 74 is the same as that of the third initial residual pattern 390b. Furthermore, because, as in Fig. As shown in Figure 8, the section in the third initial charge carrier injection layer 143i, which corresponds to the third initial residual pattern 390b, is not exposed during the fabrication of at least one third light-emitting device 203, and the material of the fourth pattern layer 74 is also the same as that of the third initial charge carrier injection layer 143i.

[0240] That is, in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, the material of the fourth pattern layer 74 comprises the third charge carrier injection material. In a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, the material of the fourth pattern layer 74 comprises the third charge carrier injection material and the ninth photosensitive material.

[0241] The third initial charge carrier injection layer 143i in the region where the third light-emitting device 203 is located is exposed and developed, and a third charge carrier injection layer 143 of the third light-emitting device 203 is formed thereafter, while the third initial charge carrier injection layer 143i in the region where the second light-emitting device 202 is located is washed away during the development process, forming a third initial residual pattern 390b. Therefore, the thickness d23 of the third initial residual pattern 390b is smaller than the thickness d24 of the third charge carrier injection layer 143. Consequently, the thickness of the fourth pattern layer 74 (which is equal to the thickness d23 of the third initial residual pattern 390b) is smaller than the thickness d24 of the third charge carrier injection layer 143.

[0242] It is to be understood that, as in Fig. Figure 3B shows that if the third charge carrier injection layer 143 is a hole injection layer, in the area where the second light-emitting device 202 is located, the fourth pattern layer 74 can serve as an electron barrier layer of the second light-emitting device 202 to improve the electron injection of the second light-emitting device 202 and increase the efficiency of the light-emitting device 20.

[0243] In some embodiments, such as in Fig. 3A- Fig. As shown in Figure 3B, the at least one third light-emitting component 203 is configured to emit light with a third wavelength; for example, the light with the third wavelength is blue light. The at least one third light-emitting component 203 further comprises a fifth pattern layer 75 and a sixth pattern layer 76, wherein the sixth pattern layer 76 is arranged on a side of the third sacrificial layer group 13C facing the base substrate 11, and the fifth pattern layer 75 is arranged on a side of the sixth pattern layer 76 facing the base substrate, wherein the third sacrificial layer group 13C, the sixth pattern layer 76 and the fifth pattern layer 75 are sequentially contacted.

[0244] An example is how in Fig. As shown in Figure 4, the fifth pattern layer 75 is formed by subjecting the first initial residual pattern 330, which is formed after development of the first initial charge carrier injection layer 141i in the region where the third light-emitting device 203 is located, to exposure (exposure of the third light-emitting device 203). Therefore, the fifth pattern layer 75 consists of the same material as the first charge carrier injection layer 141i, namely the first crosslinked charge carrier injection material.

[0245] The first initial charge carrier injection layer 141i in the region where the first light-emitting device 201 is located is exposed and developed, and a first charge carrier injection layer 141 of the first light-emitting device 201 is formed thereafter, while the first initial charge carrier injection layer 141i in the region where the third light-emitting device 203 is located is washed out during the development process, forming a first initial residual pattern 330. Therefore, the thickness d31 of the first initial residual pattern 330 is less than the thickness d32 of the first charge carrier injection layer 141. Consequently, the thickness of the fifth pattern layer 75 (which is equal to the thickness d31 of the first initial residual pattern 330) is less than the thickness d32 of the first charge carrier injection layer 141.

[0246] An example is how in Fig. As shown in Figure 5, in the case where the second sacrificial layer group 13B is a second charge carrier transport layer 132, the sixth pattern layer 76 is formed by subjecting the second initial residual pattern 350a, which is formed after the development of the second initial charge carrier transport layer 132i in the region where the third light-emitting device 203 is located, to exposure (an exposure process of the third light-emitting device 203). Therefore, the sixth pattern layer 76 consists of the same material as the second charge carrier transport layer 132, namely the second cross-linked charge carrier transport material.

[0247] The second initial charge carrier transport layer 132i in the region where the second light-emitting device 202 is located is exposed and developed, and a second charge carrier transport layer 132 of the second light-emitting device 202 is formed thereafter, while the second initial charge carrier transport layer 132i in the region where the third light-emitting device 203 is located is washed out during the development process, forming a second initial residual pattern 350a. Therefore, the thickness d11 of the second initial residual pattern 350a is less than the thickness d12 of the second charge carrier transport layer 132. Consequently, the thickness of the sixth pattern layer 76 (which is equal to the thickness d11 of the second initial residual pattern 350a) is less than the thickness d12 of the second charge carrier transport layer 132.

[0248] An example is how in Fig. As shown in Figure 6, in the case where the second sacrificial layer group 13B comprises a second charge carrier transport layer 132 and a second charge carrier injection layer 142, the sixth pattern layer 76 is formed by subjecting the second initial residual pattern 360b, which is formed after development of the second initial charge carrier injection layer 142i in the region where the third light-emitting device 203 is located, to exposure (an exposure process of the third light-emitting device 203). Therefore, the sixth pattern layer 76 consists of the same material as the second charge carrier injection layer 142, namely the second crosslinked charge carrier injection material.

[0249] The second initial charge carrier injection layer 142i in the region where the second light-emitting device 202 is located is exposed and developed, and a second charge carrier injection layer 142 of the second light-emitting device 202 is formed thereafter, while the second initial charge carrier injection layer 142i in the region where the third light-emitting device 203 is located is washed out during the development process, forming a second initial residual pattern 360b. Therefore, the thickness d13 of the second initial residual pattern 360b is smaller than the thickness d14 of the second charge carrier injection layer 142. Consequently, the thickness of the sixth pattern layer 76 (which is equal to the thickness d13 of the second initial residual pattern 360b) is smaller than the thickness d14 of the second charge carrier injection layer 142.

[0250] It is to be understood that, as in Fig. Figure 3B shows that in the area where the third light-emitting device 203 is located, if the material of the fifth pattern layer 75 is the first charge carrier injection material and the material of the sixth pattern layer 76 is the second charge carrier injection material, the fifth pattern layer 75 and the sixth pattern layer 76 can serve as part of the hole injection layer of the third light-emitting device 203 to improve the hole injection of the third light-emitting device 203 and increase the efficiency of the light-emitting device 20.

[0251] In some embodiments, the light-emitting substrate 1 further comprises a pixel definition layer 12, which is provided with several openings Q, wherein the several light-emitting components 20 are provided in a one-to-one correspondence in the several openings Q. On a side of the pixel definition layer 12 facing away from the base substrate 11, a seventh pattern layer 81, an eighth pattern layer 82, and a ninth pattern layer 83 are provided, wherein the seventh pattern layer 81, the eighth pattern layer 82, and the ninth pattern layer 83 are arranged sequentially in the direction away from the base substrate 11, and the seventh pattern layer 81, the eighth pattern layer 82, and the ninth pattern layer 83 are contacted sequentially.

[0252] An example is how in Fig. As shown in Figure 4, the seventh pattern layer 81 is a first initial residual pattern 330, which is formed after development of the first initial charge carrier injection layer 141i in the region where the pixel definition layer 12 is located. Therefore, the material for forming the seventh pattern layer 81 is the same as that of the first initial residual pattern 330. Furthermore, because, as shown in Fig. 5- Fig. As shown in Figure 8, the section in the first initial charge carrier injection layer 141i, which corresponds to the seventh pattern layer 81, is not exposed during the fabrication of at least one second light-emitting device 202 and at least one third light-emitting device 203, the material of the seventh pattern layer 81 is also the same as that of the first initial charge carrier injection layer 141i.

[0253] That is, in a case where the first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material under light radiation, the material of the seventh pattern layer 81 comprises the first charge carrier injection material. In a case where the first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material and a third photosensitive material under light radiation, the material of the seventh pattern layer 81 comprises the first charge carrier injection material and the third photosensitive material.

[0254] The first initial charge carrier injection layer 141i in the region where the first light-emitting device 201 is located is exposed and developed, and a first charge carrier injection layer 141 of the first light-emitting device 201 is formed, while the first initial charge carrier injection layer 141i in the region where the pixel definition layer 12 is located is washed out during the development process, forming a first initial residual pattern 330 (the seventh pattern layer 81). Therefore, the thickness d31 of the first initial residual pattern 330 is less than the thickness d32 of the first charge carrier injection layer 141. Consequently, the thickness of the seventh pattern layer 81 (which is equal to the thickness d13 of the second initial residual pattern 360b) is less than the thickness d32 of the first charge carrier injection layer 141.

[0255] An example is how in Fig. As shown in Figure 5, in the case where the second sacrificial layer group 13B is a second charge carrier transport layer 132, the eighth pattern layer 82 is a second initial residual pattern 350a, which is formed after the development of the second initial charge carrier transport layer 132i in the region where the pixel definition layer 12 is located. Therefore, the material for forming the eighth pattern layer 82 is the same as that of the second initial residual pattern 350a. Furthermore, because, as in Fig. 5 and Fig. As shown in Figure 7, the section in the second initial charge carrier transport layer 132i, which corresponds to the eighth pattern layer 82, is not exposed during the fabrication of at least one second light-emitting component 202 and at least one third light-emitting component 203, the material of the eighth pattern layer 82 is also the same as that of the second initial charge carrier transport layer 132i.

[0256] That is, in a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material under light radiation, the material of the eighth pattern layer 82 comprises the second charge carrier transport material. In a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material and a fifth photosensitive material under light radiation, the material of the eighth pattern layer 82 comprises the second charge carrier transport material and the fifth photosensitive material.

[0257] The second initial charge carrier transport layer 132i in the region where the second light-emitting device 202 is located is exposed and developed, and a second charge carrier transport layer 132 of the second light-emitting device 202 is formed thereafter, while the second initial charge carrier transport layer 132i in the region where the pixel definition layer 12 is located is washed out during the development process, forming a second initial residual pattern 350a (the eighth pattern layer 82). Therefore, the thickness d11 of the second initial residual pattern 350a is less than the thickness d12 of the second charge carrier transport layer 132. Consequently, the thickness of the eighth pattern layer 82 (which is equal to the thickness d11 of the second initial residual pattern 350a) is less than the thickness d12 of the second charge carrier transport layer 132.

[0258] An example is how in Fig. Figure 6 shows that, in the case where the second sacrificial layer group 13B comprises a second charge carrier transport layer 132 and a second charge carrier injection layer 142, the eighth pattern layer 82 is a second initial residual pattern 360b, which is formed after the development of the second initial charge carrier injection layer 142i in the region where the pixel definition layer 12 is located. Therefore, the material for forming the eighth pattern layer 82 is the same as that of the second initial residual pattern 360b. Furthermore, as shown in Fig. 6 and Fig. As shown in Figure 8, the section in the second initial charge carrier injection layer 142i, which corresponds to the eighth pattern layer 82, is not exposed during the fabrication of at least one second light-emitting device 202 and at least one third light-emitting device 203, the material of the eighth pattern layer 82 is also the same as that of the second initial charge carrier injection layer 142i.

[0259] That is, in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material under light radiation, the material of the eighth pattern layer 82 comprises the second charge carrier injection material. In a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material and a sixth photosensitive material under light radiation, the material of the eighth pattern layer 82 comprises the second charge carrier injection material and the sixth photosensitive material.

[0260] The second initial charge carrier injection layer 142i in the region where the second light-emitting device 202 is located is exposed and developed, and a second charge carrier injection layer 142 of the second light-emitting device 202 is formed thereafter, while the second initial charge carrier injection layer 142i in the region where the pixel definition layer 12 is located is washed out during the development process, forming a second initial residual pattern 360b (the eighth pattern layer 82). Therefore, the thickness d13 of the second initial residual pattern 360b is smaller than the thickness d14 of the second charge carrier injection layer 142. Consequently, the thickness of the eighth pattern layer 82 (which is equal to the thickness d13 of the second initial residual pattern 360b) is smaller than the thickness d14 of the second charge carrier injection layer 142.

[0261] An example is how in Fig. Figure 7 shows that, in the case where the third sacrificial layer group 13C is a third charge carrier transport layer 133, the ninth pattern layer 83 is a third initial residual pattern 380a, which is formed after the development of the third initial charge carrier transport layer 133i in the region where the pixel definition layer 12 is located. Therefore, the material for forming the ninth pattern layer 83 is the same as that of the third initial residual pattern 380a. Furthermore, as shown in Fig. As shown in Figure 7, the section in the third initial charge carrier transport layer 133i, which corresponds to the third initial residual pattern 380a, is not exposed during the fabrication of at least one third light-emitting component 203, and the material of the ninth pattern layer 83 is also the same as that of the third initial charge carrier transport layer 133i.

[0262] That is, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, the material of the ninth pattern layer 83 comprises the third charge carrier transport material. In a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, the material of the ninth pattern layer 83 comprises the third charge carrier transport material and the eighth photosensitive material.

[0263] The third initial charge carrier transport layer 133i in the region where the third light-emitting device 203 is located is exposed and developed, and a third charge carrier transport layer 133 of the third light-emitting device 203 is formed thereafter, while the third initial charge carrier transport layer 133i in the region where the pixel definition layer 12 is located is washed out during the development process, forming a third initial residual pattern 380a (the ninth pattern layer 83). Therefore, the thickness d21 of the third initial residual pattern 380a is less than the thickness d22 of the third charge carrier transport layer 133. Consequently, the thickness of the ninth pattern layer 83 (which is equal to the thickness d21 of the third initial residual pattern 380a) is less than the thickness d22 of the third charge carrier transport layer 133.

[0264] It should be noted that if the second sacrificial layer group 13B is the second charge carrier transport layer 132 and the third sacrificial layer group 13C is the third charge carrier transport layer 133, if the second charge carrier transport material of the eighth pattern layer 82 and the third charge carrier transport material of the ninth pattern layer 83 are identical, and if the fifth photosensitive material of the eighth pattern layer 82 and the eighth photosensitive material of the ninth pattern layer 83 are identical, then in the area where the pixel definition layer 12 is located, the materials of the eighth pattern layer 82 and the ninth pattern layer 83 are the same, the eighth pattern layer 82 and the ninth pattern layer 83 can be considered as one layer, and the thickness of this layer is (d11+d21).

[0265] An example is how in Fig. As shown in Figure 8, in the case where the third sacrificial layer group 13C comprises a third charge carrier transport layer 133 and a third charge carrier transport layer 143, the ninth pattern layer 83 is a third initial residual pattern 390b, which is formed after development of the third initial charge carrier injection layer 143i in the region where the pixel definition layer 12 is located. Therefore, the material for forming the ninth pattern layer 83 is the same as that of the third initial residual pattern 390b. Furthermore, because, as in Fig. As shown in Figure 8, the section in the third initial charge carrier injection layer 143i, which corresponds to the third initial residual pattern 390b, is not exposed during the fabrication of at least one third light-emitting device 203, and the material of the ninth pattern layer 83 is also the same as that of the third initial charge carrier injection layer 143i.

[0266] That is, in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, the material of the ninth pattern layer 83 comprises the third charge carrier injection material. In a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, the material of the ninth pattern layer 83 comprises the third charge carrier injection material and the ninth photosensitive material.

[0267] The third initial charge carrier injection layer 143i in the region where the third light-emitting device 203 is located is exposed and developed, and a third charge carrier injection layer 143 of the third light-emitting device 203 is formed thereafter, while the third initial charge carrier injection layer 143i in the region where the pixel definition layer 12 is located is washed out during the development process, forming a third initial residual pattern 390b (the ninth pattern layer 83). Therefore, the thickness d23 of the third initial residual pattern 390b is less than the thickness d24 of the third charge carrier injection layer 143. Consequently, the thickness of the ninth pattern layer 83 (which is equal to the thickness d23 of the third initial residual pattern 390b) is less than the thickness d24 of the third charge carrier injection layer 143.

[0268] It should be noted that if the second sacrificial layer group 13B consists of the second charge carrier transport layer 132 and the second charge carrier injection layer 142, and the third sacrificial layer group 13C consists of the third charge carrier transport layer 133 and the third charge carrier injection layer 143, and if the first charge carrier injection material of the seventh pattern layer 81, the second charge carrier injection material of the eighth pattern layer 82, and the third charge carrier injection material of the ninth pattern layer 83 are identical, and if the third photosensitive material of the seventh pattern layer 81, the sixth photosensitive material of the eighth pattern layer 82, and the ninth photosensitive material of the ninth pattern layer 83 are identical, then in the region where the pixel definition layer 12 is located, the materials of the seventh pattern layer 81, the eighth pattern layer 82, and the ninth pattern layer 83 are the same.The seventh pattern layer 81, the eighth pattern layer 82 and the ninth pattern layer 83 can be considered as one layer, and the thickness of this layer is (d13+d23+d31).

[0269] It should be noted that not all pattern layers are present under the first pattern layer 71, the second pattern layer 72, the third pattern layer 73, the fourth pattern layer 74, the fifth pattern layer 75, the sixth pattern layer 76, the seventh pattern layer 81, the eighth pattern layer 82, and the ninth pattern layer 83; some of them may be present. For example, if the first initial charge carrier injection layer 141i is removed more cleanly after development and no remnants of the first initial residual pattern 330 remain, then the third pattern layer 73, the fifth pattern layer 75, and the seventh pattern layer 81 do not exist.

[0270] The foregoing provides an exemplary description of the first light-emitting component 201, the second light-emitting component 202, the third light-emitting component 203, and the pattern layers remaining in the pixel definition layer 12. The following provides an exemplary description of the structures of the networked materials in the first light-emitting component 201, the second light-emitting component 202, and the third light-emitting component 203, as well as the structures of the photosensitive materials from which the networked materials are formed.

[0271] In some embodiments, the first photosensitive material, the fourth photosensitive material, and the seventh photosensitive material are identical or different and each independently selected from any of photosensitive materials of a first category, wherein the photosensitive material of the first category comprises a first photosensitive group which undergoes a crosslinking reaction with a quantum dot material under light radiation, wherein the quantum dot material is one of the first quantum dot material, the second quantum dot material, and the third quantum dot material.

[0272] In some embodiments, any one of the first quantum dot material, the second quantum dot material, and the third quantum dot material comprises a quantum dot body and a first ligand material coordinated to the quantum dot body. The quantum dot body comprises any one of the following quantum dots: II-VI quantum dots, III-V quantum dots, IV-VI quantum dots, core-shell quantum dots, and ABX3 perovskite quantum dots. In ABX3 perovskite quantum dots, A is one or more of CH3NH3. + (Methylamine), NH2CH=NH2 (Formamidine) and Cs + , B one or two of Pb 2+ and Sn 2+ , as well as X one or more of Cl - , Br - and I - ; the ABX3 perovskite quantum dots include CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CsPbBr3, CsPbCl3 and CsPbI3.

[0273] As an example, the first ligand material coordinated to the quantum dot body is used for crosslinking with photosensitive materials of the first category (a first photosensitive material, a fourth photosensitive material, and a seventh photosensitive material). The first ligand material contains a hydrocarbon insertion group ZH. Under light irradiation, the hydrocarbon insertion group ZH can undergo a hydrocarbon insertion reaction with the photosensitive group of the first category, as shown in the following formula, where T is a reactive intermediate free radical generated by the photosensitive group of the first category under light irradiation. In the hydrocarbon insertion group ZH, Z is any one of a primary carbon, a secondary carbon, and a tertiary carbon.The specific details are referred to in the following content and are not explained in more detail here. (T) + ZH → Z-(T)-H

[0274] Examples of II-VI quantum dots are selected from: one or more of binary compounds, such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgSe, HgTe and HgS; one or more of ternary compounds, such as Hg x CD 1-x Te, Hg x CD 1-x S, Hg x CD 1-x Se, Hg x Zn 1-x Te, Cd x Zn 1-x Se and Cd x Zn 1-x S, where 0 < x < 1, but not limited to that.

[0275] III-V quantum dots are selected from, but not limited to, InP, InAs, InSb, GaAs, GaP, GaN, GaSb, InN, AlP, AlN, AlAs, or mixtures thereof.

[0276] IV-VI quantum dots are selected from, but not limited to, PbS, PbSe, PbTe, or mixtures thereof.

[0277] Quantum dots with a core-shell structure mean that one material forms the core and another material forms the shell. For example, a quantum dot with a CdS@ZnS structure means that the core material is CdS and the shell material is ZnS. Quantum dots with a core-shell structure are selected from one or more of the following: CdS@ZnS, CdSe@CdS, InP@ZnS, CdTe@CdSe, CdSe@ZnTe, ZnTe@CdSe, ZnSe@CdS, and Cd 1-x Zn x S@ZnS, where 0 <x< 1, jedoch nicht darauf beschränkt.

[0278] In ABX3 perovskite quantum dots, A is one or more of CH3NH3 + (Methylamine), NH2CH=NH2 (Formamidine) and Cs + , B one or two of Pb 2+ and Sn 2+ , as well as X one or more of Cl - , Br - and I - ; the ABX3 perovskite quantum dots include, but are not limited to, CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CsPbBr3, CsPbCl3 and CsPbI3.

[0279] In some other embodiments, the quantum dot body can consist of other nanoscale materials, such as nanorods, nanoplatelets, and the like. The composition of these other nanoscale materials can include, but is not limited to, at least one of the materials CuInS₂, CuInSe₂, AgInS₂, etc.

[0280] It should be noted that the structural formulas listed above are only examples of quantum dot structures and do not represent any limitations. The structures of the quantum dot are not restricted here, as long as the requirement that the first ligand material is coordinated at the quantum dot is met.

[0281] For example, the first ligand material can be an organic molecule containing a hydrocarbon chain. For instance, the first ligand material can be selected from any category of organic acids, organic amines, organic phosphorus, and organic thiols, including but not limited to oleic acid, oleylamine, dodecyl mercaptan, tetradecylphosphonic acid, tri-n-octylphosphine, hexadecyltrimethylammonium bromide, and polyethylene glycol or polyvinylpyrrolidone.

[0282] For example, the first ligand material contains a CH bond and is crosslinked to photosensitive materials of the first category via a hydrocarbon (CH) insertion reaction. To simplify the representation, the first ligand material can be represented by the following formula: where R2 and R3 are the same or different and each independently selected from any hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40, and a heteroaryl group with C6-C40.

[0283] R1 is selected from any one of a carboxyl group with a C1-C40 carbon chain, an amino group with a C1-C40 carbon chain, and a sulfhydryl group with a C1-C40 carbon chain; any one of the carboxyl group, the amino group, and the sulfhydryl group is coordinated and connected to the quantum dot body.

[0284] It should be noted that a Cx carbon chain is a carbon chain with a total of x carbon(C) atoms, and the same applies in the following.

[0285] Under light radiation, the CH bond in the first ligand material can be crosslinked with photosensitive materials of the first category (the first, fourth, and seventh photosensitive materials). The specific details of the crosslinking reaction are described in the following sections and are not explained further here.

[0286] In some embodiments, the photosensitive material of the first category is selected from any of the structures shown in the following general formula (IV-A): where the benzophenone group is a first photosensitive group.

[0287] L1 is selected from any single bond, ester bond, ether bond, and thioether bond.

[0288] R4 and R5 are the same or different and are each independently selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group with C1-C40, cycloalkyl group with C3-C40, heterocycloalkyl group with C3-C40, aryl group with C6-C40 and heteroaryl group with C6-C40.

[0289] a is selected from positive integers greater than or equal to 2.

[0290] It should be noted that 'a' indicates the number of the corresponding group. The value of 'a' is a positive integer greater than or equal to 2, i.e., 'a' can be 2, 3, or 4, and an integer value greater than 4.

[0291] If there are more carbon atoms in R5, the value of a can be larger, e.g., a positive integer greater than 6. However, the larger the value of a, the more difficult it is to synthesize and purify the first-category photosensitive material. Theoretically, though, the larger the value of a, the more reaction sites the first-category photosensitive material has, and an excessive number of reaction sites in the first-category photosensitive material leads to an increase in molecular steric hindrance. Therefore, the value of a can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0292] The photosensitive material of the first category, with a structure shown in the general formula (IVA), contains a benzophenone group. This photosensitive material containing the benzophenone group can be crosslinked with the first ligand material coordinated to the quantum dot body. For example, under light radiation (hv), the benzophenone is photolyzed to generate a triplet ketone intermediate whose structure is shown in the following formula, and C • -O • In the triplet ketone intermediate, the nearby CH bond is attacked to enable a crosslinking reaction.

[0293] In some embodiments, the reaction principle of photosensitive materials of the first category with quantum dot materials (including the first quantum dot material, the second quantum dot material, and the third quantum dot material) is as shown in the following formula. The reactive intermediate free radical C • -O • (Carbon-oxygen radical), which is contained in the triplet ketone intermediate in the photosensitive material of the first category, attacks the nearby CH bond, i.e. C • -O • , which is contained in the triplet ketone intermediate in the photosensitive material of the first category, attacks a CH bond in the first ligand material coordinated to a quantum dot body (QD), so that the CH bond in the first ligand material is opened.

[0294] After the opening of the CH bond in the first ligand material, a carbon free radical (C • ) and a hydrogen free radical (H • ) formed. The oxygen free radical (O • ) in the photosensitive material of the first category, the hydrogen free radical (H) attacks • ) to form a hydroxide bond (-OH), and the carbon free radical (C • ) in the photosensitive material of the first category, the carbon free radical (C •) in the first ligand material to form a carbon-carbon bond, so that the photosensitive materials of the first category and the quantum dot materials (including the first quantum dot material, the second quantum dot material and the third quantum dot material) are crosslinked to form crosslinked light-emitting materials (including the first crosslinked light-emitting material, the second crosslinked light-emitting material and the third crosslinked light-emitting material).

[0295] Here, “X” represents a compound group that links two benzophenone groups. This compound group includes, for example, R5 and at least two L1s.

[0296] In some embodiments, any one of the first crosslinked light-emitting material, the second crosslinked light-emitting material and the third crosslinked light-emitting material comprises one of the structures shown in the following general formula (IA): wherein R1' is selected from any one of the remaining structures after removal of a hydrogen in a carboxyl group, an amino group and a sulfhydryl group of R1.

[0297] It should be noted that for the description of L1, reference is made to the preceding description of L1. For the description of R1, reference is made to the preceding description of R1. For the description of R2, R3, and R4, reference is made to the preceding description of R2, R3, and R4, and any two of R2, R3, and R4 are the same or different. For the description of R5, reference is made to the preceding description of R5. QD represents any of the quantum dot fields, where the quantum dot field comprises any of the following: II-VI quantum dots, III-V quantum dots, IV-VI quantum dots, core-shell quantum dots, and ABX3 perovskite quantum dots, and for the description of quantum dot fields, reference is made to the preceding description of quantum dots. For the description of a, reference is made to the preceding description of a.This will not be repeated here.

[0298] For example, the value of a could be 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of a to a positive integer greater than or equal to 2, each benzophenone group in the first-category photosensitive material can be linked to a molecule of the first ligand material. Therefore, the molecule of the first-category photosensitive material containing a number of a benzophenone groups can link a molecules of the quantum dot material (including the first quantum dot material, the second quantum dot material, and the third quantum dot material) to form a crosslinked light-emitting material (including the first crosslinked light-emitting material, the second crosslinked light-emitting material, and the third crosslinked light-emitting material).

[0299] In some examples, the photosensitive material of the first category is selected from the following structural formula (ethyl-1,2-diylbis(3-benzoylbenzoate)):

[0300] In some embodiments, the photosensitive material of the first category is selected from any of the structures shown in the following general formula (IV-B):

[0301] The azide group is the first light-sensitive group.

[0302] R6 is selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group with C1-C40, cycloalkyl group with C3-C40, heterocycloalkyl group with C3-C40, aryl group with C6-C40 and heteroaryl group with C6-C40.

[0303] b is selected from positive integers greater than or equal to 2.

[0304] It should be noted that b represents the number of the corresponding group. The value of b is a positive integer greater than or equal to 2, i.e., b can be 2, 3, or 4, and an integer value greater than 4.

[0305] If more carbon atoms are present in R6, the value of b can be larger, e.g., a positive integer greater than 6. However, the larger the value of b, the more difficult it is to synthesize and purify the first-category photosensitive material. Theoretically, though, the larger the value of b, the more reaction sites the first-category photosensitive material has, and an excessive number of reaction sites in the first-category photosensitive material leads to an increase in molecular steric hindrance. Therefore, the value of b can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0306] The photosensitive material of the first category, with a structure shown in the general formula (IV-B), contains an azide group. This photosensitive material containing the azide group can be crosslinked with the first ligand material coordinated to the quantum dot body. For example, under light radiation (hv), the azide group is photolyzed, yielding a reactive intermediate free radical, N-carbene. is generated. The N-carbene attacks the nearby CH bond to enable a crosslinking reaction.

[0307] As an example, under light radiation, the photosensitive material of the first category, which contains azide groups (-N3), undergoes a crosslinking reaction with the CH bond in the first ligand material. This crosslinking reaction is represented by the following formula. Here, the value of b is 2, the photosensitive material of the second category contains two azide groups (-N3), each azide group (-N3) generates an N-carbene, and each N-carbene attacks a molecule of the first ligand material. Through the CH insertion reaction, the photosensitive material of the second category and the quantum dot material are crosslinked, forming a crosslinked light-emitting material (including: a first crosslinked light-emitting material, a second crosslinked light-emitting material, and a third crosslinked light-emitting material).The solubility of the first cross-linked light-emitting material, the second cross-linked light-emitting material, and the third cross-linked light-emitting material in solvents of the first category decreases, i.e., the first cross-linked light-emitting material, the second cross-linked light-emitting material, and the third cross-linked light-emitting material are insoluble in the developer solution (e.g., the first solvent, the fourth solvent, or the seventh solvent) during development.

[0308] In some embodiments, any one of the first crosslinked light-emitting material, the second crosslinked light-emitting material and the third crosslinked light-emitting material comprises any one of the structures shown in the following general formula (IB):

[0309] It should be noted that for the description of R1, reference is made to the preceding description of R1. For the description of R1', reference is made to the preceding description of R1'. For the description of R2 and R3, reference is made to the preceding description of R2 and R3, and R2 and R3 are either the same or different. For the description of R6, reference is made to the preceding description of R6. QD represents any of the quantum dot fields, where the quantum dot field comprises any of the following: II-VI quantum dots, III-V quantum dots, IV-VI quantum dots, core-shell quantum dots, and ABX3 perovskite quantum dots, and for the description of quantum dot fields, reference is made to the preceding description of quantum dots. For the description of b, reference is made to the preceding description of b. This is not repeated here.

[0310] For example, the value of b could be 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of b as a positive integer greater than or equal to 2, each azide group in the first-category photosensitive material can be linked to a molecule of the first ligand material. Therefore, the molecule of the first-category photosensitive material containing a number of b azide groups can link b molecules of the quantum dot material (including the first quantum dot material, the second quantum dot material, and the third quantum dot material) to form a crosslinked light-emitting material (including the first crosslinked light-emitting material, the second crosslinked light-emitting material, and the third crosslinked light-emitting material).

[0311] In some examples, the photosensitive material of the first category is selected from any one of the following structural formulas:

[0312] In some embodiments, the photosensitive material of the first category is selected from any of the structures shown in the following general formula (IV-C):

[0313] The diazirine group is the first light-sensitive group.

[0314] R7 and R8 are the same or different and are each independently selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group with C1-C40, cycloalkyl group with C3-C40, heterocycloalkyl group with C3-C40, aryl group with C6-C40 and heteroaryl group with C6-C40.

[0315] c is selected from positive integers greater than or equal to 2.

[0316] It should be noted that c represents the number of the corresponding group. The value of c is a positive integer greater than or equal to 2, i.e., c can be 2, 3, or 4, and an integer value greater than 4.

[0317] If there are more carbon atoms in R7, the value of c can be larger, e.g., a positive integer greater than 6. However, the larger the value of c, the more difficult it is to synthesize and purify the first-category photosensitive material. Theoretically, though, the larger the value of c, the more reaction sites the first-category photosensitive material has, and an excessive number of reaction sites in the first-category photosensitive material leads to an increase in molecular steric hindrance. Therefore, the value of c can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0318] The photosensitive material of the first category, with a structure shown in the general formula (IV-C), contains a diazirine group. This photosensitive material containing the diazirine group can be crosslinked with the first ligand material coordinated to the quantum dot body. For example, under light radiation (hv), the diazirine group is photolyzed, yielding a reactive intermediate free radical, the carbene. is generated. The carbene attacks the nearby CH bond to enable a crosslinking reaction.

[0319] For example, under light radiation, the first-category photosensitive material, which contains diazirine groups, undergoes a crosslinking reaction with the CH bond in the first ligand material. This crosslinking reaction is represented by the following formula. Here, the value of c is 2, the first-category photosensitive material contains two diazirine groups, each diazirine group generates a carbene, and each carbene attacks a molecule of the first ligand material. Through the CH insertion reaction, the first-category photosensitive material and the quantum dot material are crosslinked, forming a crosslinked light-emitting material (including: a first crosslinked light-emitting material, a second crosslinked light-emitting material, and a third crosslinked light-emitting material).The solubility of the first cross-linked light-emitting material, the second cross-linked light-emitting material, and the third cross-linked light-emitting material in solvents of the first category decreases, i.e., the first cross-linked light-emitting material, the second cross-linked light-emitting material, and the third cross-linked light-emitting material are insoluble in the developer solution (e.g., the first solvent, the fourth solvent, or the seventh solvent) during development.

[0320] In some embodiments, any one of the first crosslinked light-emitting material, the second crosslinked light-emitting material and the third crosslinked light-emitting material comprises any one of the structures shown in the following general formula (IC):

[0321] It should be noted that for the description of R1, reference is made to the preceding description of R1. For the description of R1', reference is made to the preceding description of R1'. For the description of R2 and R3, reference is made to the preceding description of R2 and R3, and R2 and R3 are either the same or different. For the description of R8, reference is made to the preceding description of R8. For the description of R7, reference is made to the preceding description of R7. QD represents any of the quantum dot fields, where the quantum dot field comprises any of the following: II-VI quantum dots, III-V quantum dots, IV-VI quantum dots, core-shell quantum dots, and ABX3 perovskite quantum dots, and for the description of quantum dot fields, reference is made to the preceding description of quantum dots.Regarding the description of c, please refer to the preceding description of c. This will not be repeated here.

[0322] For example, the value of c could be 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of c as a positive integer greater than or equal to 2, each azide group in the first-category photosensitive material can be linked to a molecule of the first ligand material. Therefore, the molecule of the first-category photosensitive material containing a number of c azide groups can link c molecules of the quantum dot material (including the first quantum dot material, the second quantum dot material, and the third quantum dot material) to form a crosslinked light-emitting material (including the first crosslinked light-emitting material, the second crosslinked light-emitting material, and the third crosslinked light-emitting material).

[0323] In some examples, the photosensitive material of the first category is selected from the following structural formula (3,3'-((perfluorobutane-1,4-diyl)bis(4,1-phenylene))bis(3-(trifluoromethyl)-3H-diazoxide):

[0324] In some examples, the reaction formula of the photosensitive material of the first category with the charge carrier input material is shown as in formula (X-5):

[0325] In some other examples, the reaction formula of the photosensitive material of the first category with the charge carrier input material is as shown in formula (X-6):

[0326] In some further examples, the reaction formula of the photosensitive material of the first category with the charge carrier input material is shown as in formula (X-7):

[0327] This represents the first ligand material, namely oleic acid, whose structure is shown in the following formula:

[0328] It is understood that, as described in the above-mentioned procedures for the fabrication of the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203, the quantum dot material and the photosensitive material of the first category are dissolved in the first solution, the fourth solution, or the seventh solution, and then coated or printed. The solvents of the first solution, the fourth solution, and the seventh solution are, respectively, the first solvent, the fourth solvent, and the seventh solvent, and all three solvents belong to the first category. By providing the first photosensitive material, selected from the general formula (IV-A), the general formula (IV-B), or the general formula (IV-C), the solubility of the photosensitive material of the first category in the first-category solvent (e.g.,Octane, propylene glycol methyl ether acetate) are increased, which favors the preparation of the light-emitting patterns 23 (including the first light-emitting pattern 23a, the second light-emitting pattern 23b and the third light-emitting pattern 23c).

[0329] The foregoing provides an exemplary description of the first category of light-sensitive materials and the cross-linked light-emitting materials (the first cross-linked light-emitting material, the second cross-linked light-emitting material, the third cross-linked light-emitting material). The following provides an exemplary description of the structures of the second category of light-sensitive materials and the cross-linked charge carrier transport materials (the first cross-linked charge carrier transport material, the second cross-linked charge carrier transport material, the third cross-linked charge carrier transport material).

[0330] In some embodiments, the second, fifth, and eighth photosensitive materials are the same or different and each independently selected from any of the photosensitive materials of a second category, wherein the photosensitive material of the second category comprises a second photosensitive group which, under light radiation, undergoes a crosslinking reaction with a charge carrier transport material, wherein the charge carrier transport material is one of the first, second, and third charge carrier transport materials. The first and second photosensitive groups may be the same or different.

[0331] In some embodiments, any one of the first, second, and third charge carrier transport materials comprises a hydrocarbon insertion group ZH. The hydrocarbon insertion group ZH is configured to undergo a hydrocarbon insertion reaction with the second-category photosensitive group upon light exposure, as shown in the following formula, where T is a reactive intermediate free radical generated by the second-category photosensitive group upon light exposure. In the hydrocarbon insertion group ZH, Z is any one of a primary carbon, a secondary carbon, and a tertiary carbon. (T) + ZH → Z-(T)-H

[0332] Examples include the first, second, and third charge carrier transport materials described above. These are hole transport materials configured to increase the hole transfer rate in the light-emitting device and effectively block electrons within the light-emitting pattern to achieve maximum charge carrier recombination. Furthermore, they reduce the energy barrier of the holes during the injection process and improve hole injection efficiency, thereby enhancing the brightness, efficiency, and lifetime of the device.

[0333] For example, the hole transport material can be a material containing a triphenylamine structural unit, such as poly[bis(4-phenyl)(4-butylphenyl)amine] (poly-TPD) and poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-n-butyl)phenyl)-diphenylamine)] (TFB). Alternatively, the hole transport material can be a material containing a spirobifluorene structural unit, such as 2,2',7,7'-tetrakis(diphenylamino)-9,9'-spirobifluorene. Alternatively, the hole transport material can be polyvinylcarbazole (PVK).

[0334] For example, the charge carrier transport material contains a CH bond, and the charge carrier transport material is cross-linked to photosensitive materials of the second category via a hydrocarbon (CH) insertion reaction. To simplify the representation, the charge carrier transport material can be represented by the following formula: HC-(X)

[0335] X represents a remaining structure after removal of a CH bond from any of the first charge carrier transport material, the second charge carrier transport material and the third charge carrier transport material, the CH bond being used for crosslinking reaction with a second photosensitive group of photosensitive material of a second category under light radiation.

[0336] Under light radiation, the CH bond in the charge carrier transport material can be crosslinked with photosensitive materials of the second category (the second, fifth, and eighth photosensitive materials). The specific details of the crosslinking reaction are described in the following sections and are not explained further here.

[0337] In some embodiments, the photosensitive material of the second category is selected from any of the structures shown in the following general formula (VA):

[0338] The benzophenone group is a second light-sensitive group.

[0339] L2 is selected from any single bond, ester bond, ether bond, and thioether bond.

[0340] R9 and R 10 are the same or different and are each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40 and a heteroaryl group with C6-C40.

[0341] d is chosen from positive integers greater than or equal to 2.

[0342] It should be noted that d represents the number of the corresponding group. The value of d is a positive integer greater than or equal to 2, i.e., d can be 2, 3, or 4, and an integer value greater than 4.

[0343] If more carbon atoms are in R 10 If the photosensitive material of category 2 is present, the value of d can be larger, e.g., a positive integer greater than 6. However, the larger the value of d, the more difficult it is to synthesize and purify the photosensitive material of category 2 during production. Theoretically, however, the larger the value of d, the more reaction sites the photosensitive material of category 2 has, and moreover, an excessive number of reaction sites in the photosensitive material of category 2 leads to an increase in molecular steric hindrance. Therefore, the value of d can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0344] The photosensitive material of the second category, with a structure shown in the general formula (VA), contains a benzophenone group. The photosensitive material of the second category containing the benzophenone group can be crosslinked with the charge carrier transport material. For example, under light radiation (hv), the benzophenone is photolyzed to generate a triplet ketone intermediate (whose structure is referenced in the preceding content), and C • -O • In the triplet ketone intermediate, the nearby CH bond is attacked to enable a crosslinking reaction.

[0345] In some embodiments, the reaction principle of photosensitive materials of the second category with charge carrier transport materials (including the first, second, and third charge carrier transport materials) is as shown in the following formula. The reactive intermediate free radical C • -O • (Carbon-oxygen radical), which is contained in the triplet ketone intermediate in the photosensitive material of the second category, attacks the nearby CH bond, i.e. C • -O • , which is contained in the triplet ketone intermediate in the photosensitive material of the second category, attacks a CH bond in the charge carrier transport material, so that the CH bond in the charge carrier transport material is opened.

[0346] After the opening of the CH bond in the charge carrier transport material, a carbon free radical (C • ) and a hydrogen free radical (H • ) formed. The oxygen free radical (O • ) in the light-sensitive material of the second category, the hydrogen free radical (H) attacks • ) to form a hydroxide bond (-OH), and the carbon free radical (C • ) in the light-sensitive material of the second category, the carbon free radical (C •) in the charge carrier transport material to form a carbon-carbon bond, so that the photosensitive materials of the second category and the charge carrier transport materials (including the first charge carrier transport material, the second charge carrier transport material and the third charge carrier transport material) are crosslinked to form crosslinked charge carrier transport materials (including the first crosslinked charge carrier transport material, the second crosslinked charge carrier transport material and the third crosslinked charge carrier transport material).

[0347] Here, "Q" represents a compound group that links two benzophenone groups. This compound group includes, for example, R. 10 and at least two L2s.

[0348] In some examples, any one of the first networked load carrier transport material, the second networked load carrier transport material, and the third networked load carrier transport material comprises any one of the structures shown in the following general formula (II-A):

[0349] It should be noted that for the description of L2, reference is made to the preceding description of L2. For the description of R9, reference is made to the preceding description of R9. For the description of R 10 refers to the previous description of R 10 Reference is made to the preceding description of X. Regarding the description of X, reference is made to the preceding description of X. Regarding the description of d, reference is made to the preceding description of d. This will not be repeated here.

[0350] For example, the value of d could be 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of d as a positive integer greater than or equal to 2, each benzophenone group in the second-category photosensitive material can be linked to a molecule of the charge carrier transport material. Therefore, the second-category photosensitive material molecule containing a number of d benzophenone groups can link d molecules of the charge carrier transport material (including the first, second, and third charge carrier transport materials) to form a cross-linked charge carrier transport material (including the first, second, and third cross-linked charge carrier transport materials).

[0351] In some examples, the photosensitive material of the second category is selected from the following structural formula (ethyl-1,2-diylbis(3-benzoylbenzoate)):

[0352] In some embodiments, the photosensitive material of the second category is selected from any of the structures shown in the following general formula (VB): where the azide group is a second photosensitive group.

[0353] R 11 is selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group with C1-C40, cycloalkyl group with C3-C40, heterocycloalkyl group with C3-C40, aryl group with C6-C40 and heteroaryl group with C6-C40.

[0354] e is selected from positive integers greater than or equal to 2.

[0355] It should be noted that e indicates the number of the corresponding group. The value of e is a positive integer greater than or equal to 2, i.e., e can be 2, 3, or 4, and an integer value greater than 4.

[0356] If more carbon atoms are in R 11 If the photosensitive material of category 2 is present, the value of e can be larger, e.g., a positive integer greater than 6. However, the larger the value of e, the more difficult it is to synthesize and purify the photosensitive material of category 2 during production. Theoretically, however, the larger the value of e, the more reaction sites the photosensitive material of category 2 has, and moreover, an excessive number of reaction sites in the photosensitive material of category 2 leads to an increase in molecular steric hindrance. Therefore, the value of e can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0357] The photosensitive material of the second category, with a structure shown in the general formula (VB), contains an azide group. This photosensitive material containing the azide group can be crosslinked with the charge carrier transport material. For example, under light radiation (hv), the azide group is photolyzed, yielding a reactive intermediate free radical, N-carbene. is generated. The N-carbene attacks the nearby CH bond to enable a crosslinking reaction.

[0358] As an example, under light radiation, the photosensitive material of the second category, which contains azide groups (-N3), undergoes a crosslinking reaction with the CH bond in the charge carrier transport material, and this crosslinking reaction is as shown in the following formula. Here, the value of e is equal to 2, the photosensitive material of the second category contains two azide groups (-N3), each azide group (-N3) generates a reactive intermediate free radical N-carbene, and each N-carbene attacks one molecule of the charge carrier transport material. Through the CH insertion reaction, the photosensitive material of the second category and the charge carrier transport material are crosslinked, forming a crosslinked charge carrier transport material (including: a first crosslinked charge carrier transport material, a second crosslinked charge carrier transport material, and a third crosslinked charge carrier transport material).The solubility of the first crosslinked load carrier transport material, the second crosslinked load carrier transport material, and the third crosslinked load carrier transport material in solvents of the second category decreases, i.e., the first crosslinked load carrier transport material, the second crosslinked load carrier transport material, and the third crosslinked load carrier transport material are insoluble during development in the developer solution (e.g., the second solvent, the fifth solvent, or the eighth solvent).

[0359] In some examples, any one of the first networked load carrier transport material, the second networked load carrier transport material, and the third networked load carrier transport material comprises any one of the structures shown in the following general formula (II-B):

[0360] It should be noted that regarding the description of R 11based on the previous description of R 11 Reference is made to the previous description of X. Regarding the description of X, reference is made to the previous description of X. Regarding the description of e, reference is made to the previous description of e. This will not be repeated here.

[0361] For example, the value of e could be 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of e as a positive integer greater than or equal to 2, each azide group in the second-category photosensitive material can be linked to a molecule of the charge carrier transport material. Therefore, the second-category photosensitive material molecule containing a number of e azide groups can link b molecules of the charge carrier transport material (including the first, second, and third charge carrier transport materials) to form a cross-linked charge carrier transport material (including the first, second, and third charge carrier transport materials).

[0362] In some examples, the photosensitive material of the second category is selected from any one of the following structural formulas:

[0363] In some embodiments, the photosensitive material of the second category is selected from any of the structures shown in the following general formula (VC): the diazirine group is a second photosensitive group.

[0364] R 12 and R 13 are the same or different and are each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40 and a heteroaryl group with C6-C40.

[0365] f is selected from positive integers greater than or equal to 2.

[0366] It should be noted that f represents the number of the corresponding group. The value of f is a positive integer greater than or equal to 2, i.e., f can be 2, 3, or 4, and an integer value greater than 4.

[0367] If more carbon atoms are in R 12 Since the number of reaction sites is not present, the value of f can be larger, e.g., a positive integer greater than 6. However, the larger the value of f, the more difficult it is to synthesize and purify the second-category photosensitive material. Theoretically, though, the larger the value of f, the more reaction sites the second-category photosensitive material has, and moreover, an excessive number of reaction sites in the second-category photosensitive material leads to an increase in molecular steric hindrance. Therefore, the value of f can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0368] The photosensitive material of the second category, with a structure shown in the general formula (VC), contains a diazirine group. This photosensitive material containing the diazirine group can be crosslinked with the charge carrier transport material. For example, under light radiation (hv), the diazirine group is photolyzed, yielding a reactive intermediate free radical, the carbene. is generated. The carbene attacks the nearby CH bond to enable a crosslinking reaction.

[0369] For example, under light radiation, the photosensitive material of the second category, which contains diazirine groups, undergoes a crosslinking reaction with the CH bond in the charge carrier transport material. This crosslinking reaction is represented by the following formula. Here, the value of f is 2, the photosensitive material of the second category contains two diazirine groups, each diazirine group generates a carbene, and each carbene attacks a molecule of the charge carrier transport material. Through the CH insertion reaction, the photosensitive material of the second category and the charge carrier transport material are crosslinked, forming a crosslinked charge carrier transport material (including: a first crosslinked charge carrier transport material, a second crosslinked charge carrier transport material, and a third crosslinked charge carrier transport material).The solubility of the first crosslinked load carrier transport material, the second crosslinked load carrier transport material, and the third crosslinked load carrier transport material in solvents of the second category decreases, i.e., the first crosslinked load carrier transport material, the second crosslinked load carrier transport material, and the third crosslinked load carrier transport material are insoluble during development in the developer solution (e.g., the second solvent, the fifth solvent, or the eighth solvent).

[0370] In some examples, any one of the first networked load carrier transport material, the second networked load carrier transport material, and the third networked load carrier transport material comprises any one of the structures shown in the following general formula (II-C):

[0371] It should be noted that regarding the description of R 12based on the previous description of R 12 is referred to. Regarding the description of R 13 refers to the previous description of R 13 Reference is made to the preceding description of X. Regarding the description of f, reference is made to the preceding description of f. This will not be repeated here.

[0372] For example, the value of f could be 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of f as a positive integer greater than or equal to 2, each diazirine group in the second-category photosensitive material can be linked to a molecule of the charge carrier transport material. Therefore, the second-category photosensitive material molecule containing a number of f diazirine groups can link b molecules of the charge carrier transport material (including the first, second, and third charge carrier transport materials) to form a cross-linked charge carrier transport material (including the first, second, and third charge carrier transport materials).

[0373] In some examples, the photosensitive material of the second category is selected from the following structural formula (3,3'-((perfluorobutane-1,4-diyl)bis(4,1-phenylene))bis(3-(trifluoromethyl)-3H-diazoxide):

[0374] In some examples, the reaction formula of the photosensitive material of the second category with the charge carrier input material is shown as in formula (X-2):

[0375] In some other examples, the reaction formula of the photosensitive material of the second category with the charge carrier input material is as shown in formula (X-3):

[0376] In some further examples, the reaction formula of the photosensitive material of the second category with the charge carrier input material is shown as in formula (X-4):

[0377] This stands for the hole transport material, namely TFB, whose structure is represented as in the following formula:

[0378] It is understood that, as described in the above-mentioned processes for the fabrication of the first light-emitting device 201, the second light-emitting device 202, and the third light-emitting device 203, the charge carrier material and the photosensitive material of the second category are dissolved in the second solution, the fifth solution, or the eighth solution, and then coated or printed. The solvents of the second solution, the fifth solution, or the eighth solution are, respectively, the second solvent, the fifth solvent, and the eighth solvent, and all three solvents belong to the second category. By providing the second photosensitive material, selected from the general formula (VA), the general formula (VB), or the general formula (VC), the solubility of the photosensitive material of the second category in the solvent of the second category (e.g.,toluene, chlorobenzene and dichlorotoluene) are increased, which facilitates the production of the charge carrier transport layers (including the first charge carrier transport layer 131, the second charge carrier transport layer 132 and the third charge carrier transport layer 133).

[0379] The foregoing provides an exemplary description of the photosensitive materials of the second category and the cross-linked charge carrier transport materials (the first cross-linked charge carrier transport material, the second cross-linked charge carrier transport material, the third cross-linked charge carrier transport material). The following provides an exemplary description of the structures of the photosensitive materials of the third category and the cross-linked charge carrier injection materials (the first cross-linked charge carrier injection material, the second cross-linked charge carrier injection material, the third cross-linked charge carrier injection material).

[0380] In some embodiments, the third, sixth, and ninth photosensitive materials are identical or different and each independently selected from any of the photosensitive materials of a third category, wherein the photosensitive material of the third category comprises a third photosensitive group which undergoes a crosslinking reaction with a charge carrier injection material upon exposure to light, the charge carrier injection material being one of the first, second, and third charge carrier injection materials. Any two of the first, second, and third photosensitive groups may be identical or different.

[0381] In some embodiments, any one of the first, second, and third charge carrier injection materials comprises a hydrocarbon insertion group ZH. The hydrocarbon insertion group ZH is configured to undergo a hydrocarbon insertion reaction with the third-category photosensitive group upon light exposure, as shown in the following formula, where T is a reactive intermediate free radical generated by the third-category photosensitive group upon light exposure. In the hydrocarbon insertion group ZH, Z is any one of a primary carbon, a secondary carbon, and a tertiary carbon. (T) + ZH → Z-(T)-H

[0382] Examples of hole injection materials described above include the first, second, and third charge carrier injection materials. These materials are configured to reduce the barrier to hole injection from the anode, enabling efficient injection of holes into the QLED light-emitting device. One example of a hole injection material is poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate).

[0383] For example, the charge carrier transport material contains a CH bond, and the charge carrier transport material is cross-linked to photosensitive materials of the third category via a hydrocarbon (CH) insertion reaction. To simplify the representation, the charge carrier transport material can be represented by the following formula: HC (Y)

[0384] Y represents a remaining structure after removal of a CH bond from any of the first charge carrier injection material, the second charge carrier injection material, and the third charge carrier injection material; the CH bond is used for crosslinking reaction with a third photosensitive group of photosensitive material of a third category under light radiation.

[0385] Under light radiation, the CH bond in the charge carrier injection material can be crosslinked with photosensitive materials of the third category (the third, sixth, and ninth photosensitive materials). The specific details of the crosslinking reaction are described in the following sections and are not explained further here.

[0386] In some embodiments, the third photosensitive group is a benzophenone group. The third-category photosensitive material containing the benzophenone group can be crosslinked with the charge carrier injection material. For example, under light radiation (hv), the benzophenone is photolyzed to generate a triplet ketone intermediate (whose structure is referred to the preceding content), and C • -O • In the triplet ketone intermediate, the nearby CH bond is attacked to enable a crosslinking reaction.

[0387] In some embodiments, the reaction principle of photosensitive materials of the third category with charge carrier injection materials (including the first charge carrier injection material, the second charge carrier injection material, and the third charge carrier injection material) is as shown in the following formula. The reactive intermediate free radical C • -O • (Carbon-oxygen radical), which is contained in the triplet ketone intermediate in the third category photosensitive material, attacks the nearby CH bond, i.e. C • -O • , which is contained in the triplet ketone intermediate in the third category photosensitive material, attacks a CH bond in the charge carrier injection material, so that the CH bond in the charge carrier injection material is opened.

[0388] After the opening of the CH bond in the charge carrier injection material, a carbon free radical (C • ) and a hydrogen free radical (H • ) formed. The oxygen free radical (O • ) in the photosensitive material of the third category, the hydrogen free radical (H) attacks • ) to form a hydroxide bond (-OH), and the carbon free radical (C • ) in the photosensitive material of the third category, the carbon free radical (C •) in the charge carrier injection material to form a carbon-carbon bond, so that the photosensitive materials of the third category and the charge carrier injection materials (including the first charge carrier injection material, the second charge carrier injection material and the third charge carrier injection material) are crosslinked to form crosslinked charge carrier injection materials (including the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material).

[0389] Here, “Q” represents a compound group linking two benzophenone groups. It should be noted that the photosensitive material of the third category and the charge carrier injection material in the formula can be non-ionic organic materials, and also ionic organic materials (with ionic groups and charges, which are not shown in the formula), which is not limited here.

[0390] In some embodiments, R B R 14 , and Q is R 15 as well as at least two L3s. The photosensitive material of the third category is selected from any one of the structures shown in the following general formula (VI-A):

[0391] The benzophenone group is a third photosensitive group.

[0392] L3 is selected from any single bond, ester bond, ether bond, and thioether bond.

[0393] R 14 and R 15 are the same or different and are each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40 and a heteroaryl group with C6-C40.

[0394] [M] m- is selected from any of the organic anions and inorganic anions, wherein the organic anions include benzenesulfonate ions, salicylate ions and 3-hydroxy-2-naphthoic acid ions; and the inorganic anions include chloride ions, sulfate ions and nitrate ions.

[0395] g is selected from positive integers greater than or equal to 2.

[0396] m is selected from positive integers greater than or equal to 1.

[0397] It should be noted that g represents the number of the corresponding group. The value of g is a positive integer greater than or equal to 2, i.e., g can be 2, 3, or 4, and an integer value greater than 4.

[0398] If more carbon atoms are in R 15 Since the number of reaction sites is not present, the value of g can be larger, e.g., a positive integer greater than 6. However, the larger the value of g, the more difficult it is to synthesize and purify the third-category photosensitive material. Theoretically, though, the larger the value of g, the more reaction sites the third-category photosensitive material has, and moreover, an excessive number of reaction sites in the third-category photosensitive material leads to an increase in molecular steric hindrance. Therefore, the value of g can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0399] In some embodiments, any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-A):

[0400] It should be noted that regarding the description of R 14 based on the previous description of R 14 is referred to. Regarding the description of R 15 refers to the previous description of R 15 Reference is made to the previous description of L3. Regarding the description of Y, reference is made to the previous description of Y. Regarding the description of [M] m- refers to the previous description of [M] m-Reference is made to the preceding description of g. Regarding the description of g, reference is made to the preceding description of g. Regarding the description of m, reference is made to the preceding description of m. This will not be repeated here.

[0401] For example, the value of g could be 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of g as a positive integer greater than or equal to 2, each benzophenone group in the third-category photosensitive material can be linked to a molecule of the charge carrier injection material. Therefore, the molecule of the third-category photosensitive material containing a number of g benzophenone groups can link g molecules of the charge carrier injection material (including the first, second, and third charge carrier injection materials) to form a cross-linked charge carrier injection material (including the first, second, and third cross-linked charge carrier injection materials).

[0402] In some embodiments, R B R 16 , and Q is R 17 as well as at least two L4s. The photosensitive material of the third category is selected from any one of the structures shown in the following general formula (VI-B):

[0403] The benzophenone group is a third photosensitive group.

[0404] L4 is selected from any single bond, ester bond, ether bond, and thioether bond.

[0405] R 16 and R 17 are the same or different and are each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40 and a heteroaryl group with C6-C40.

[0406] [N] n+is selected from any of organic cations and inorganic cations, wherein the organic cations include methylamine ions; and the inorganic cations include sodium ions and potassium ions.

[0407] h is selected from positive integers greater than or equal to 2.

[0408] n is selected from positive integers greater than or equal to 1.

[0409] It should be noted that h represents the number of the corresponding group. The value of h is a positive integer greater than or equal to 2, i.e., h can be 2, 3, or 4, and an integer value greater than 4.

[0410] If more carbon atoms are in R 17Since the number of reaction sites is high, the value of h can be larger, e.g., a positive integer greater than 6. However, the larger the value of h, the more difficult it is to synthesize and purify the third-category photosensitive material. Theoretically, though, the larger the value of h, the more reaction sites the third-category photosensitive material has, and an excessive number of reaction sites in the third-category photosensitive material leads to an increase in molecular steric hindrance. Therefore, the value of h can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0411] In some embodiments, any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-B):

[0412] It should be noted that regarding the description of R 16 based on the previous description of R 16 is referred to. Regarding the description of R 17 refers to the previous description of R 17 Reference is made to the previous description of L4. Regarding the description of Y, reference is made to the previous description of Y. Regarding the description of [N] n+ refers to the previous description of [N] n+Reference is made to the preceding description of h. Regarding the description of h, reference is made to the preceding description of h. Regarding the description of n, reference is made to the preceding description of n. This will not be repeated here.

[0413] For example, the value of h could be 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of h as a positive integer greater than or equal to 2, each benzophenone group in the third-category photosensitive material can be linked to a molecule of the charge carrier injection material. Therefore, the molecule of the third-category photosensitive material containing a number of h benzophenone groups can link h molecules of the charge carrier injection material (including the first, second, and third charge carrier injection materials) to form a cross-linked charge carrier injection material (including the first, second, and third cross-linked charge carrier injection materials).

[0414] In some examples, the photosensitive material of the third category is selected from the following structural formula:

[0415] In some embodiments, the third photosensitive group is an azide group. The third-category photosensitive material containing the azide group can be crosslinked with the charge carrier injection material. For example, under light radiation (hv), the azide group is photolyzed, yielding a reactive intermediate free radical, N-carbene. is generated. The N-carbene attacks the nearby CH bond to enable a crosslinking reaction.

[0416] As an example, under light radiation, the third-category photosensitive material containing azide groups (-N3) undergoes a crosslinking reaction with the CH bond in the charge carrier injection material, and this crosslinking reaction is as shown in the following formula. The third-category photosensitive material contains at least two azide groups (-N3), each azide group (-N3) generating an N-carbene, and each N-carbene attacking a molecule of the charge carrier injection material. Through the CH insertion reaction, the third-category photosensitive material and the charge carrier injection material are crosslinked, forming a crosslinked charge carrier injection material (including: a first crosslinked charge carrier injection material, a second crosslinked charge carrier injection material, and a third crosslinked charge carrier injection material).The solubility of the first, second, and third cross-linked charge carrier injection materials in third-category solvents decreases; that is, the first, second, and third cross-linked charge carrier injection materials are insoluble in the developer solution (e.g., the third solvent, the sixth solvent, or the ninth solvent) during development.

[0417] It should be noted that the photosensitive material of the third category and the charge carrier injection material in the formula can be non-ionic organic materials, and also ionic organic materials (with ionic groups and charges, which is not shown in the formula), which is not limited here.

[0418] In some embodiments, R A R 18 The photosensitive material of the third category is selected from any one of the structures shown in the following general formula (VI-C):

[0419] The azide group is a third light-sensitive group.

[0420] R 18 is selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group with C1-C40, cycloalkyl group with C3-C40, heterocycloalkyl group with C3-C40, aryl group with C6-C40 and heteroaryl group with C6-C40.

[0421] [Q] q- is selected from any of the organic anions and inorganic anions, wherein the organic anions include benzenesulfonate ions, salicylate ions and 3-hydroxy-2-naphthoic acid ions; and the inorganic anions include chloride ions, sulfate ions and nitrate ions.

[0422] i is selected from positive integers greater than or equal to 2.

[0423] q is selected from positive integers greater than or equal to 1.

[0424] It should be noted that i represents the number of the corresponding group. The value of i is a positive integer greater than or equal to 2, i.e., i can be 2, 3, or 4, and an integer value greater than 4.

[0425] If more carbon atoms are in R 18Since the number of reaction sites is not specified, the value of i can be larger, e.g., a positive integer greater than 6. However, the larger the value of i, the more difficult it is to synthesize and purify the third-category photosensitive material. Theoretically, though, the larger the value of i, the more reaction sites the third-category photosensitive material has, and an excessive number of reaction sites in the third-category photosensitive material leads to an increase in molecular steric hindrance. Therefore, the value of i can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0426] In some embodiments, any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-C):

[0427] It should be noted that regarding the description of R 18 based on the previous description of R 18 Reference is made to the preceding description of Y. Regarding the description of Y, reference is made to the preceding description of Y. Regarding the description of [Q] q- refers to the previous description of [Q] q- Reference is made to the previous description of i. Regarding the description of i, reference is made to the previous description of i. Regarding the description of q, reference is made to the previous description of q. This will not be repeated here.

[0428] For example, the value of i could be 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of i as a positive integer greater than or equal to 2, each azide group in the third-category photosensitive material can be linked to a molecule of the charge carrier injection material. Therefore, the molecule of the third-category photosensitive material containing a number of i azide groups can link i molecules of the charge carrier injection material (including the first, second, and third charge carrier injection materials) to form a cross-linked charge carrier injection material (including the first, second, and third cross-linked charge carrier injection materials).

[0429] In some embodiments, R B R19 The photosensitive material of the third category is selected from any one of the structures shown in the following general formula (VI-D):

[0430] The azide group is the third light-sensitive group. R 19 is selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group with C1-C40, cycloalkyl group with C3-C40, heterocycloalkyl group with C3-C40, aryl group with C6-C40 and heteroaryl group with C6-C40. [T] t+ is selected from any of organic cations and inorganic cations, wherein the organic cations include methylamine ions, and the inorganic cations include sodium ions and potassium ions; j is selected from positive integers greater than or equal to 2; t is selected from positive integers greater than or equal to 1.

[0431] It should be noted that j represents the number of the corresponding group. The value of j is a positive integer greater than or equal to 2, i.e., j can be 2, 3, or 4, and an integer value greater than 4.

[0432] If there are more carbon atoms in \R 19 Since the number of reaction sites is not present, the value of j can be larger, e.g., a positive integer greater than 6. However, the larger the value of j, the more difficult it is to synthesize and purify the third-category photosensitive material. Theoretically, though, the larger the value of j, the more reaction sites the third-category photosensitive material has, and moreover, an excessive number of reaction sites in the third-category photosensitive material leads to an increase in molecular steric hindrance. Therefore, the value of j can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0433] In some embodiments, any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-D):

[0434] It should be noted that regarding the description of \R 19 based on the previous description of R 19 Reference is made to the preceding description of Y. Regarding the description of Y, reference is made to the preceding description of Y. Regarding the description of [T] t+ refers to the previous description of [T] t+ Reference is made to the preceding description of j. Regarding the description of t, reference is made to the preceding description of t. This will not be repeated here.

[0435] For example, j could be set to 2, 3, 4, 5, or 6, etc., and this is not a limit. By setting j to a positive integer greater than or equal to 2, each azide group in the third-category photosensitive material can be linked to a molecule of the charge carrier injection material. Therefore, the molecule of the third-category photosensitive material containing a number of j azide groups can link j molecules of the charge carrier injection material (including the first, second, and third charge carrier injection materials) to form a cross-linked charge carrier injection material (including the first, second, and third cross-linked charge carrier injection materials).

[0436] In some examples, the photosensitive material of the third category is selected from any one of the following structural formulas: (3E,5E)-3,5-Bis(4-azido-2,5-diisopropyl-3,6-difluorobenzylidene)-1,1-dimethylpiperidin-one trifluorosulfonate; (3E,5E)-3,5-Bis(4-azido-2,3,5,6-tetrafluorobenzylidene)-1,1-dimethylpiperidin-one trifluorosulfonate.

[0437] In some embodiments, the third photosensitive group is a diazirine group. The third-category photosensitive material containing the diazirine group can be crosslinked with the charge carrier injection material. For example, under light radiation (hv), the diazirine group is photolyzed, generating a reactive intermediate free radical, the carbene. is generated. The carbene attacks the nearby CH bond to enable a crosslinking reaction.

[0438] As an example, under light radiation, the third-category photosensitive material containing diazirine groups undergoes a crosslinking reaction with the CH bond in the charge carrier injection material, and this crosslinking reaction is as shown in the following formula. The third-category photosensitive material contains at least two diazirine groups; each diazirine group generates a carbene, and each carbene attacks a molecule of the charge carrier injection material. Through the CH insertion reaction, the third-category photosensitive material and the charge carrier injection material are crosslinked, forming a crosslinked charge carrier injection material (including: a first crosslinked charge carrier injection material, a second crosslinked charge carrier injection material, and a third crosslinked charge carrier injection material).The solubility of the first cross-linked charge carrier injection material, the second cross-linked charge carrier injection material, and the third cross-linked charge carrier injection material in third-category solvents decreases, i.e., the first cross-linked charge carrier injection material, the second cross-linked charge carrier injection material, and the third cross-linked charge carrier injection material are insoluble in the developer solution (e.g., the third solvent, the sixth solvent, or the ninth solvent) during development.

[0439] It should be noted that the photosensitive material of the third category and the charge carrier injection material in the formula can be non-ionic organic materials, and also ionic organic materials (with ionic groups and charges, which is not shown in the formula), which is not limited here.

[0440] In some embodiments, R C R 21 , R D is R 20 , and Q is R 15 as well as at least two L3s. The photosensitive material of the third category is selected from any one of the structures shown in the following general formula (VI-E):

[0441] The diazirine group is a third light-sensitive group.

[0442] R 20 and R 21 are the same or different and are each independently selected from any one of a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40 and a heteroaryl group with C6-C40.

[0443] [U] u-is selected from any of the organic anions and inorganic anions, wherein the organic anions include benzenesulfonate ions, salicylate ions and 3-hydroxy-2-naphthoic acid ions; and the inorganic anions include chloride ions, sulfate ions and nitrate ions.

[0444] k is selected from positive integers greater than or equal to 2.

[0445] u is selected from positive integers greater than or equal to 1.

[0446] It should be noted that k represents the number of the corresponding group. The value of k is a positive integer greater than or equal to 2, i.e., k can be 2, 3, or 4, and an integer value greater than 4.

[0447] If more carbon atoms are in R 21Since the number of reaction sites is not specified, the value of k can be larger, e.g., a positive integer greater than 6. However, the larger the value of k, the more difficult it is to synthesize and purify the third-category photosensitive material. Theoretically, though, the larger the value of k, the more reaction sites the third-category photosensitive material has, and an excessive number of reaction sites in the third-category photosensitive material leads to an increase in molecular steric hindrance. Therefore, the value of k can be a positive integer greater than or equal to 2 and less than or equal to 6.

[0448] In some embodiments, any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-E):

[0449] It should be noted that regarding the description of R 20 based on the previous description of R 20 is referred to. Regarding the description of R 21 refers to the previous description of R 21 Reference is made to the preceding description of Y. Regarding the description of Y, reference is made to the preceding description of Y. Regarding the description of [U] u- refers to the previous description of [U] u-Reference is made to the preceding description of k. Regarding the description of k, reference is made to the preceding description of u. This will not be repeated here.

[0450] For example, k could be set to a value of 2, 3, 4, 5, or 6, etc., which is not limited here. By setting the value of k to a positive integ...

Claims

[1] Light-emitting substrate, comprising: a base substrate; several light-emitting components provided on the base substrate and arranged sequentially along a first direction, the first direction being parallel to a plane in which the base substrate is located, each of the several light-emitting components comprising a first electrode, a second electrode and a light-emitting pattern provided between the first electrode and the second electrode; wherein the multiple light-emitting components comprise at least one first light-emitting component, wherein each of the at least one first light-emitting component comprises a first light-emitting pattern and a first charge carrier transport layer and a first charge carrier injection layer provided between the base substrate and the first light-emitting pattern, wherein the first charge carrier transport layer is located closer to the first light-emitting pattern than the first charge carrier injection layer; wherein the material of the first light-emitting pattern comprises a first cross-linked light-emitting material, the material of the first charge carrier transport layer comprises a first cross-linked charge carrier transport material, and the material of the first charge carrier injection layer comprises a first cross-linked charge carrier injection material. [2] Light-emitting substrate according to claim 1, wherein the multiple light-emitting components further comprise: at least one second light-emitting component, wherein each of the at least one second light-emitting component comprises a second light-emitting pattern and a second sacrificial layer group provided between the base substrate and the second light-emitting pattern, wherein the second sacrificial layer group comprises a second charge carrier transport layer; wherein the material of the second light-emitting pattern comprises a second cross-linked light-emitting material, and the material of the second charge carrier transport layer comprises a second cross-linked charge carrier transport material. [3] Light-emitting substrate according to claim 2, wherein the second sacrificial layer group further comprises a second charge carrier injection layer, wherein the second charge carrier injection layer is located on a side of the second charge carrier transport layer facing the base substrate, and the material of the second charge carrier injection layer comprises a second cross-linked charge carrier injection material. [4] Light-emitting substrate according to claim 2 or 3, wherein the multiple light-emitting components further comprise: at least one third light-emitting component, wherein each of the at least one third light-emitting component comprises a third light-emitting pattern and a third sacrificial layer group provided between the base substrate and the third light-emitting pattern, wherein the third sacrificial layer group comprises a third charge carrier transport layer; wherein the material of the third light-emitting pattern comprises a third cross-linked light-emitting material, and the material of the third charge carrier transport layer comprises a third cross-linked charge carrier transport material. [5] Light-emitting substrate according to claim 4, wherein the third sacrificial layer group further comprises a third charge carrier injection layer; wherein the third charge carrier injection layer is located on a side of the third charge carrier transport layer facing the base substrate, and the material of the third charge carrier injection layer comprises a third cross-linked charge carrier injection material. [6] Light-emitting substrate according to any one of claims 1 to 5, wherein the first crosslinked light-emitting material is generated by crosslinking a first quantum dot material under light radiation, wherein the solubility of the first quantum dot material in a first solvent is greater than the solubility of the first crosslinked light-emitting material in the first solvent; or, wherein the first crosslinked light-emitting material is generated by crosslinking a first quantum dot material and a first photosensitive material under light radiation, wherein the solubility of the first quantum dot material and the first photosensitive material in a first solvent is greater than the solubility of the first crosslinked light-emitting material in the first solvent; wherein the first crosslinked charge carrier transport material is generated by crosslinking a first charge carrier transport material under light radiation, wherein the solubility of the first charge carrier transport material in a second solvent is greater than the solubility of the first crosslinked charge carrier transport material in the second solvent; or, wherein the first crosslinked charge carrier transport material is generated by crosslinking a first charge carrier transport material and a second photosensitive material under light radiation, wherein the solubility of the first charge carrier transport material and the second photosensitive material in a second solvent is greater than the solubility of the first crosslinked charge carrier transport material in the second solvent; wherein the first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material under light radiation, wherein the solubility of the first charge carrier injection material in a third solvent is greater than the solubility of the first crosslinked charge carrier injection material in the third solvent; or, wherein the first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material and a third photosensitive material under light radiation, wherein the solubility of the first charge carrier injection material and the third photosensitive material in a third solvent is greater than the solubility of the first crosslinked charge carrier injection material in the third solvent. [7] Light-emitting substrate according to any one of claims 2 to 6, wherein the second crosslinked light-emitting material is generated by crosslinking a second quantum dot material under light radiation, wherein the solubility of the second quantum dot material in a fourth solvent is greater than the solubility of the second crosslinked light-emitting material in the fourth solvent; or, wherein the second crosslinked light-emitting material is generated by crosslinking a second quantum dot material and a fourth photosensitive material under light radiation, wherein the solubility of the second quantum dot material and the fourth photosensitive material in a fourth solvent is greater than the solubility of the second crosslinked light-emitting material in the fourth solvent; wherein the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material under light radiation, wherein the solubility of the second charge carrier transport material in a fifth solvent is greater than the solubility of the second crosslinked charge carrier transport material in the fifth solvent; or, wherein the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material and a fifth photosensitive material under light radiation, wherein the solubility of the second charge carrier transport material and the fifth photosensitive material in a fifth solvent is greater than the solubility of the second crosslinked charge carrier transport material in the fifth solvent. [8] Light-emitting substrate according to any one of claims 3 to 7, wherein the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material under light radiation, wherein the solubility of the second charge carrier injection material in a sixth solvent is greater than the solubility of the second crosslinked charge carrier injection material in the sixth solvent; or, wherein the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material and a sixth photosensitive material under light radiation, wherein the solubility of the second charge carrier injection material and the sixth photosensitive material in a sixth solvent is greater than the solubility of the second crosslinked charge carrier injection material in the sixth solvent. [9] Light-emitting substrate according to any one of claims 4 to 8, wherein the third crosslinked light-emitting material is generated by crosslinking a third quantum dot material under light radiation, wherein the solubility of the third quantum dot material in a seventh solvent is greater than the solubility of the third crosslinked light-emitting material in the seventh solvent; or, wherein the third crosslinked light-emitting material is generated by crosslinking a third quantum dot material and a seventh photosensitive material under light radiation, wherein the solubility of the third quantum dot material and the seventh photosensitive material in a seventh solvent is greater than the solubility of the third crosslinked light-emitting material in the seventh solvent; wherein the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, wherein a solubility of the third charge carrier transport material in an eighth solvent is greater than a solubility of the third crosslinked charge carrier transport material in the eighth solvent; or, wherein the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, wherein a solubility of the third charge carrier transport material and the eighth photosensitive material in an eighth solvent is greater than a solubility of the third crosslinked charge carrier transport material in the eighth solvent. [10] Light-emitting substrate according to any one of claims 5 to 9, wherein the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, wherein the solubility of the third charge carrier injection material in a ninth solvent is greater than the solubility of the third crosslinked charge carrier injection material in the ninth solvent; or, wherein the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, wherein the solubility of the third charge carrier injection material and the ninth photosensitive material in a ninth solvent is greater than the solubility of the third crosslinked charge carrier injection material in the ninth solvent. [11] Light-emitting substrate according to any one of claims 4 to 10, wherein the at least one first light-emitting component is configured to emit light with a first wavelength; wherein each of the at least one first light-emitting components further comprises a first pattern layer and a second pattern layer, wherein the first pattern layer is arranged on a side of the first light-emitting pattern facing away from the base substrate, and the second pattern layer is arranged on a side of the first pattern layer facing away from the base substrate, wherein the first light-emitting pattern, the first pattern layer and the second pattern layer are contacted sequentially. [12] Light-emitting substrate according to claim 11, wherein in a case where the second sacrificial layer group comprises a second charge carrier transport layer, the thickness of the first pattern layer is less than the thickness of the second charge carrier transport layer; wherein in a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material under light radiation, the material of the first pattern layer comprises the second charge carrier transport material; or, wherein in a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material and a fifth photosensitive material under light radiation, the material of the first pattern layer comprises the second charge carrier transport material and the fifth photosensitive material; or wherein in a case where the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the thickness of the first pattern layer is less than the thickness of the second charge carrier injection layer; wherein in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material under light radiation, the material of the first pattern layer comprises the second charge carrier injection material; or wherein, in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material and a sixth photosensitive material under light radiation, the material of the first pattern layer comprises the second charge carrier injection material and the sixth photosensitive material. [13] Light-emitting substrate according to claim 11 or 12, wherein, in a case where the third sacrificial layer group comprises a third charge carrier transport layer, the thickness of the second pattern layer is less than the thickness of the third charge carrier transport layer; wherein, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, the material of the second pattern layer comprises the third charge carrier transport material; or, wherein, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, the materials of the second pattern layer comprise the third charge carrier transport material and the eighth photosensitive material; or wherein in a case where the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the thickness of the second pattern layer is less than the thickness of the third charge carrier injection layer; wherein in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, the material of the second pattern layer comprises the third charge carrier injection material; or wherein, in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, the materials of the second pattern layer comprise the third charge carrier injection material and the ninth photosensitive material. [14] Light-emitting substrate according to any one of claims 4 to 13, wherein the at least one second light-emitting component is configured to emit light with a second wavelength; wherein the at least one second light-emitting component further comprises a third pattern layer and a fourth pattern layer, wherein the third pattern layer is arranged on a side of the second sacrificial layer group facing the base substrate, and the fourth pattern layer is arranged on a side of the second light-emitting pattern facing away from the base substrate, wherein the third pattern layer, the second sacrificial layer group, the second light-emitting pattern and the fourth pattern layer are contacted sequentially. [15] Light-emitting substrate according to claim 14, wherein the thickness of the third pattern layer is less than the thickness of the first charge carrier injection layer, wherein the material of the third pattern layer comprises the first cross-linked charge carrier injection material; wherein, in a case where the third sacrificial layer group comprises a third charge carrier transport layer, the thickness of the fourth pattern layer is less than the thickness of the third charge carrier transport layer; wherein, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, the material of the fourth pattern layer comprises the third charge carrier transport material; or, wherein, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, the materials of the fourth pattern layer comprise the third charge carrier transport material and the eighth photosensitive material; or, wherein in a case where the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the thickness of the fourth pattern layer is less than the thickness of the third charge carrier injection layer; wherein in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, the material of the fourth pattern layer comprises the third charge carrier injection material; or wherein, in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, the materials of the fourth pattern layer comprise the third charge carrier injection material and the ninth photosensitive material. [16] Light-emitting substrate according to any one of claims 4 to 15, wherein the at least one third light-emitting component is configured to emit light with a third wavelength; wherein the at least one third light-emitting component further comprises a fifth pattern layer and a sixth pattern layer, wherein the sixth pattern layer is arranged on a side of the third sacrificial layer group facing the base substrate, and the fifth pattern layer is arranged on a side of the sixth pattern layer facing the base substrate, wherein the third sacrificial layer group, the sixth pattern layer and the fifth pattern layer are contacted sequentially. [17] Light-emitting substrate according to claim 16, wherein the thickness of the fifth pattern layer is less than the thickness of the first charge carrier injection layer, wherein the material of the fifth pattern layer comprises the first cross-linked charge carrier injection material; wherein, in a case where the second sacrificial layer group comprises a second charge carrier transport layer, the thickness of the sixth pattern layer is less than the thickness of the second charge carrier transport layer, the material of the sixth pattern layer comprising the second crosslinked charge carrier transport material; or wherein in a case where the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the thickness of the sixth pattern layer is less than the thickness of the second charge carrier injection layer, the material of the sixth pattern layer comprising the second crosslinked charge carrier injection material. [18] Light-emitting substrate according to any one of claims 4 to 17, wherein the at least one first light-emitting component is configured to emit light with a first wavelength, wherein the light with the first wavelength is red light; the at least one second light-emitting component is configured to emit light with a second wavelength, wherein the light with the second wavelength is green light; the at least one third light-emitting component is configured to emit light with a third wavelength, where the light with the third wavelength is blue light. [19] Light-emitting substrate according to any one of claims 4 to 18, further comprising a pixel definition layer, wherein the pixel definition layer is provided with multiple openings, wherein the multiple light-emitting components are provided in a one-to-one correspondence in the multiple openings; wherein a seventh pattern layer, an eighth pattern layer and a ninth pattern layer are provided on a side of the pixel definition layer facing away from the base substrate, wherein the seventh pattern layer, the eighth pattern layer and the ninth pattern layer are arranged sequentially in the direction away from the base substrate, and the seventh pattern layer, the eighth pattern layer and the ninth pattern layer are contacted sequentially. [20] Light-emitting substrate according to claim 19, wherein a thickness of the seventh pattern layer is less than a thickness of the first charge carrier injection layer; wherein, in a case where the first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material under light radiation, the material of the seventh pattern layer comprises the first charge carrier injection material; or, wherein, in a case where the first crosslinked charge carrier injection material is generated by crosslinking a first charge carrier injection material and a third photosensitive material under light radiation, the materials of the seventh pattern layer comprise the first charge carrier injection material and the third photosensitive material; wherein, in a case where the second sacrificial layer group comprises a second charge carrier transport layer, the thickness of the eighth pattern layer is less than the thickness of the second charge carrier transport layer; wherein, in a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material under light radiation, the material of the eighth pattern layer comprises the second charge carrier transport material; or, wherein, in a case where the second crosslinked charge carrier transport material is generated by crosslinking a second charge carrier transport material and a fifth photosensitive material under light radiation, the materials of the eighth pattern layer comprise the second charge carrier transport material and the fifth photosensitive material; or wherein in a case where the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the thickness of the eighth pattern layer is less than the thickness of the second charge carrier injection layer; wherein in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material under light radiation, the material of the eighth pattern layer comprises the second charge carrier injection material; or wherein, in a case where the second crosslinked charge carrier injection material is generated by crosslinking a second charge carrier injection material and a sixth photosensitive material under light radiation, the materials of the eighth pattern layer comprise the second charge carrier injection material and the sixth photosensitive material. [21] Light-emitting substrate according to claim 19 or 20, wherein in a case where the third sacrificial layer group comprises a third charge carrier transport layer, the thickness of the ninth pattern layer is less than the thickness of the third charge carrier transport layer; wherein, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material under light radiation, the material of the ninth pattern layer comprises the third charge carrier transport material; or, wherein, in a case where the third crosslinked charge carrier transport material is generated by crosslinking a third charge carrier transport material and an eighth photosensitive material under light radiation, the materials of the ninth pattern layer comprise the third charge carrier transport material and the eighth photosensitive material; or wherein in a case where the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the thickness of the ninth pattern layer is less than the thickness of the third charge carrier injection layer; wherein in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material under light radiation, the material of the ninth pattern layer comprises the third charge carrier injection material; or wherein, in a case where the third crosslinked charge carrier injection material is generated by crosslinking a third charge carrier injection material and a ninth photosensitive material under light radiation, the materials of the ninth pattern layer comprise the third charge carrier injection material and the ninth photosensitive material. [22] Light-emitting substrate according to any one of claims 4 to 21, wherein any one of the first cross-linked light-emitting material, the second cross-linked light-emitting material and the third cross-linked light-emitting material comprises any one of the structures shown in the following general formula (IA): or wherein any one of the first cross-linked light-emitting material, the second cross-linked light-emitting material and the third cross-linked light-emitting material comprises any one of the structures shown in the following general formula (IB): or wherein any one of the first cross-linked light-emitting material, the second cross-linked light-emitting material and the third cross-linked light-emitting material comprises any one of the structures shown in the following general formula (IC): where L1 is selected from any single bond, ester bond, ether bond and thioether bond; wherein R2, R3, R4, R5, R6, R7 and R8 are each independently selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group with C1-C40, cycloalkyl group with C3-C40, heterocycloalkyl group with C3-C40, aryl group with C6-C40 and heteroaryl group with C6-C40; where QD represents any one of the quantum dot bodies; where the quantum dot body comprises any one of the II-VI quantum dot, III-V quantum dot, IV-VI quantum dot, core-shell quantum dot, and ABX3 perovskite quantum dot; where, in the case of the ABX3 perovskite quantum dot A, one or more of CH3NH3 + , NH2CH=NH2 and Cs + is, B one or two of Pb 2+ and Sn 2+ is, and X one or more of Cl - , Br -and I - is, where the ABX3 perovskite quantum dot comprises CH3NH3PbBr3, CH3NH3PbCl3, CH3NH3PbI3, CsPbBr3, CsPbCl3 and CsPbI3; wherein R1' is selected from any of the remaining structures after removal of a hydrogen in a carboxyl group, an amino group, and a sulfhydryl group of R1; R1 is selected from any of a carboxyl group with a C1-C40 carbon chain, an amino group with a C1-C40 carbon chain, and a sulfhydryl group with a C1-C40 carbon chain; wherein any of the carboxyl group, the amino group, and the sulfhydryl group is coordinated and connected to the quantum dot body; where a, b and c are each independently selected from positive integers greater than or equal to 2. [23] Light-emitting substrate according to any one of claims 4 to 22, wherein any one of the first crosslinked charge carrier transport material, the second crosslinked charge carrier transport material and the third crosslinked charge carrier transport material comprises any one of the structures shown in the following general formula (II-A): or wherein any one of the first networked load carrier transport material, the second networked load carrier transport material and the third networked load carrier transport material comprises any one of the structures shown in the following general formula (II-B): or wherein any of the first networked load carrier transport material, the second networked load carrier transport material and the third networked load carrier transport material comprises any of the structures shown in the following general formula (II-C); where L2 is selected from any one of a single bond, an ester bond, an ether bond and a thioether bond; where R9, R 10 , R 11 , R 12 and R 13 each are independently selected from any one of a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40 and a heteroaryl group with C6-C40; where X represents a remaining structure after removal of a CH bond from any of the first charge carrier transport material, the second charge carrier transport material, and the third charge carrier transport material; where the CH bond is used for crosslinking reaction with a second photosensitive group of photosensitive material of a second category under light radiation; where the photosensitive material of the second category is one of the second photosensitive material, the fifth photosensitive material, and the eighth photosensitive material; where d, e and f are each independently selected from positive integers greater than or equal to 2. [24] Light-emitting substrate according to any one of claims 5 to 23, wherein any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-A): or wherein any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-B): or wherein any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-C): or wherein any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-D): or wherein any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-E): or wherein any one of the first crosslinked charge carrier injection material, the second crosslinked charge carrier injection material and the third crosslinked charge carrier injection material comprises any one of the structures shown in the following general formula (III-F): where L3 and L4 are each independently selected from any single bond, ester bond, ether bond and thioether bond; where R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , R 22 and R 23 each are independently selected from any one of a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40 and a heteroaryl group with C6-C40; where Y represents a remaining structure after removal of a CH bond from any of the first charge carrier injection material, the second charge carrier injection material, and the third charge carrier injection material; where the CH bond is used for crosslinking reaction with a third photosensitive group of photosensitive material of a third category under light radiation; where the photosensitive material of the third category is one of the third photosensitive material, the sixth photosensitive material, and the ninth photosensitive material; where [M] m- , [Q] q- and [U] u- each are independently selected from any one of organic anions and inorganic anions; wherein the organic anions include benzenesulfonate ions, salicylate ions and 3-hydroxy-2-naphthoic acid ions, and the inorganic anions include chloride ions, sulfate ions and nitrate ions; where [N] n+ , [T] t+ and [W] z+ each are independently selected from any one of organic cations and inorganic cations; wherein the organic cations comprise methylamine ions, and the inorganic cations comprise sodium ions and potassium ions; where g, h, i, j, k and v are each independently selected from positive integers greater than or equal to 2; where m, n, q, t, u and z are each independently selected from positive integers greater than or equal to 1. [25] Light-emitting substrate according to any one of claims 10 to 24, wherein the first photosensitive material, the fourth photosensitive material and the seventh photosensitive material are each independently selected from any one of photosensitive materials of a first category; wherein the photosensitive material of the first category comprises a first photosensitive group, wherein the first photosensitive group undergoes a crosslinking reaction with a quantum dot material under light radiation; wherein the quantum dot material is one of the first quantum dot material, the second quantum dot material and the third quantum dot material; wherein the second photosensitive material, the fifth photosensitive material and the eighth photosensitive material are each independently selected from any one of photosensitive materials of a second category; wherein the photosensitive material of the second category comprises a second photosensitive group, wherein the second photosensitive group undergoes a crosslinking reaction with a charge carrier transport material under light radiation; wherein the charge carrier transport material is one of the first charge carrier transport material, the second charge carrier transport material and the third charge carrier transport material; wherein the third photosensitive material, the sixth photosensitive material and the ninth photosensitive material are each independently selected from any one of photosensitive materials of a third category; wherein the photosensitive material of the third category comprises a third photosensitive group, wherein the third photosensitive group undergoes a crosslinking reaction with a charge carrier injection material under light radiation; wherein the charge carrier injection material is one of the first charge carrier injection material, the second charge carrier injection material and the third charge carrier injection material; and wherein any two of the first light-sensitive group, the second light-sensitive group and the third light-sensitive group may be the same or different. [26] Light-emitting device according to claim 25, wherein under ultraviolet light with a wavelength range of 200 nm to 400 nm the photosensitive material of the third category exhibits a molar extinction coefficient of more than 1 cm -1 (minor) -1 exhibits. [27] Light-emitting substrate according to claim 25 or 26, wherein the photosensitive material of the first category is selected from any of the structures shown in the following general formula (IV-A): or wherein the photosensitive material of the first category is selected from any of the structures shown in the following general formula (IV-B): or wherein the photosensitive material of the first category is selected from any of the structures shown in the following general formula (IV-C): wherein in general formula (IV-A) a benzophenone group is the first photosensitive group, in general formula (IV-B) an azide group is the first photosensitive group, and in general formula (IV-C) a diazirine group is the first photosensitive group; where L1 is selected from any single bond, ester bond, ether bond and thioether bond; wherein R2, R3, R4, R5, R6, R7 and R8 are each independently selected from any hydrogen bond, saturated or unsaturated straight-chain or branched alkyl group with C1-C40, cycloalkyl group with C3-C40, heterocycloalkyl group with C3-C40, aryl group with C6-C40 and heteroaryl group with C6-C40; where a, b and c are each independently selected from positive integers greater than or equal to 2. [28] Light-emitting substrate according to any one of claims 25 to 27, wherein the photosensitive material of the second category is selected from any of the structures shown in the following general formula (VA): or wherein the photosensitive material of the second category is selected from any of the structures shown in the following general formula (VB): or wherein the photosensitive material of the second category is selected from any of the structures shown in the following general formula (VC): where in the general formula (VA) a benzophenone group is the second photosensitive group, in the general formula (VB) an azide group is the second photosensitive group, and in the general formula (VC) a diazirine group is the second photosensitive group; where L2 is selected from any one of a single bond, an ester bond, an ether bond and a thioether bond; where R9, R 10 , R 11 , R 12 and R 13 each are independently selected from any one of a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40 and a heteroaryl group with C6-C40; where d, e and f are each independently selected from positive integers greater than or equal to 2. [29] Light-emitting substrate according to any one of claims 25 to 28, wherein the photosensitive material of the third category is selected from any of the structures shown in the following general formula (VI-A): or wherein the photosensitive material of the third category is selected from any of the structures shown in the following general formula (VI-B): or wherein the photosensitive material of the third category is selected from any of the structures shown in the following general formula (VI-C): or wherein the photosensitive material of the third category is selected from any of the structures shown in the following general formula (VI-D): or wherein the photosensitive material of the third category is selected from any of the structures shown in the following general formula (VI-E): or wherein the photosensitive material of the third category is selected from any of the structures shown in the following general formula (VI-F): wherein in general formula (VI-A) and general formula (VI-B) a benzophenone group is the third photosensitive group, in general formula (VI-C) and general formula (VI-D) an azide group is the third photosensitive group, and in general formula (VI-E) and general formula (VI-F) a diazirine group is the third photosensitive group; where L3 and L4 are each independently selected from any single bond, ester bond, ether bond and thioether bond; where R 14 , R 15 , R 16 , R 17 , R 18 , R 19 , R 20 , R 21 , R 22 and R 23each are independently selected from any one of a hydrogen bond, a saturated or unsaturated straight-chain or branched alkyl group with C1-C40, a cycloalkyl group with C3-C40, a heterocycloalkyl group with C3-C40, an aryl group with C6-C40 and a heteroaryl group with C6-C40; where [M] m- , [Q] q- and [U] u- each are independently selected from any one of organic anions and inorganic anions, wherein the organic anions include benzenesulfonate ions, salicylate ions and 3-hydroxy-2-naphthoic acid ions, and the inorganic anions include chloride ions, sulfate ions and nitrate ions; where [N] n+ , [T] t+ and [W] z+each are independently selected from any one of organic cations and inorganic cations, wherein the organic cations include methylamine ions, and the inorganic cations include sodium ions and potassium ions; where g, h, i, j, k and v are each independently selected from positive integers greater than or equal to 2; where m, n, q, t, u and z are each independently selected from positive integers greater than or equal to 1. [30] Light-emitting substrate according to any one of claims 22 to 29, wherein R5, R6 and R7 are each independently selected from any one of a saturated or unsaturated straight-chain or branched alkyl group of C10-C30, a saturated or unsaturated straight-chain or branched alkyl group of C10-C30 in which at least one hydrogen atom is replaced by a fluorine atom, and a saturated or unsaturated straight-chain or branched alkyl group of C10-C30 containing at least one ether bond; and / or where R 10 , R 11 and R 12 each are independently selected from a saturated or unsaturated straight-chain or branched alkyl group from C1-C8; and / or R 15 , R 17 , R 18 , R 19 , R 21 and R 23each are independently selected from any of the following C1-C40 carbon chains: one containing an ester bond, one containing an ether bond, one containing a carbonyl group, one containing an amide group, one containing a carboxyl group, one containing an amino group, one containing an aldehyde group. [31] Light-emitting substrate according to any one of claims 25 to 30, wherein any one of the first quantum dot material, the second quantum dot material and the third quantum dot material comprises a quantum dot body and a first ligand material coordinated to the quantum dot body, wherein the first ligand material contains a hydrocarbon insertion group ZH, wherein the hydrocarbon insertion group ZH is configured to undergo a hydrocarbon insertion reaction with photosensitive groups of a first category upon exposure to light; and / or wherein any one of the first charge carrier transport material, the second charge carrier transport material and the third charge carrier transport material comprises a hydrocarbon insertion group ZH, wherein the hydrocarbon insertion group ZH is configured to undergo a hydrocarbon insertion reaction with photosensitive groups of a second category upon exposure to light; and / or wherein any one of the first charge carrier injection material, the second charge carrier injection material and the third charge carrier injection material comprises a hydrocarbon insertion group ZH, wherein the hydrocarbon insertion group ZH is configured to undergo a hydrocarbon insertion reaction with photosensitive groups of a third category under light radiation; where in the hydrocarbon insertion group ZH Z is any one of a primary carbon, a secondary carbon and a tertiary carbon. [32] Light-emitting device according to any one of claims 10 to 31, wherein the polarity of the third solvent is greater than the polarity of the second solvent, and the polarity of the second solvent is greater than the polarity of the first solvent; and / or where the polarity of the sixth solvent is greater than the polarity of the fifth solvent, and the polarity of the fifth solvent is greater than the polarity of the fourth solvent; and / or where the polarity of the ninth solvent is greater than the polarity of the eighth solvent, and the polarity of the eighth solvent is greater than the polarity of the seventh solvent. [33] Light-emitting substrate according to any one of claims 10 to 32, wherein a solvent of a first category is at least one of octane and propylene glycol methyl ether acetate, wherein the solvent of the first category is any one of the first solvent, the fourth solvent and the seventh solvent; and / or wherein a second-category solvent is at least one of toluene, chlorobenzene, and dichlorotoluene, wherein the second-category solvent is any one of the second solvent, the fifth solvent, and the eighth solvent; and / or wherein a third-category solvent is at least one of water, ethanol, methanol, N,N-dimethylformamide, N-methylformamide and thionyl chloride, wherein the third-category solvent is any one of the third solvent, the sixth solvent and the ninth solvent. [34] Light-emitting substrate according to any one of claims 5 to 33, wherein the first charge carrier injection layer, the second charge carrier injection layer and the third charge carrier injection layer are hole injection layers, wherein the first charge carrier transport layer, the second charge carrier transport layer and the third charge carrier transport layer are hole transport layers. [35] Method for producing a light-emitting substrate, comprising: forming several light-emitting components on a base substrate, wherein the multiple light-emitting components are arranged sequentially along a first direction, the first direction being parallel to a plane in which the base substrate is located, each of the multiple light-emitting components comprising a first electrode, a second electrode and a light-emitting pattern provided between the first electrode and the second electrode; wherein the multiple light-emitting components comprise at least one first light-emitting component, wherein each of the at least one first light-emitting component comprises a first light-emitting pattern and a first charge carrier transport layer and a first charge carrier injection layer provided between the base substrate and the first light-emitting pattern, wherein the first charge carrier transport layer is located closer to the first light-emitting pattern than the first charge carrier injection layer; wherein the material of the first light-emitting pattern comprises a first cross-linked light-emitting material, the material of the first charge carrier transport layer comprises a first cross-linked charge carrier transport material, and the material of the first charge carrier injection layer comprises a first cross-linked charge carrier injection material. [36] Method for producing a light-emitting substrate according to claim 35, wherein forming the at least one first light-emitting component comprises: Forming a first electrode layer on the base substrate, wherein the first electrode layer comprises a first electrode of the at least one first light-emitting device; Forming a first initial charge carrier injection layer, a first initial charge carrier transport layer, and a first initial light-emitting pattern successively on a side of the first electrode layer facing away from the base substrate, wherein the material of the first initial charge carrier injection layer comprises a first charge carrier injection material, or a first charge carrier injection material and a third photosensitive material; the material of the first initial charge carrier transport layer comprises a first charge carrier transport material, or a first charge carrier transport material and a second photosensitive material; and the material of the first initial light-emitting pattern comprises a first quantum dot material, or a first quantum dot material and a first photosensitive material; Exposure of the first initial charge carrier injection layer, the first initial charge carrier transport layer, and the first initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the first initial charge carrier injection layer into a first crosslinked charge carrier injection material, the material of an exposed section of the first initial charge carrier transport layer into a first crosslinked charge carrier transport material, and the material of an exposed section of the first initial light-emitting pattern into a first crosslinked light-emitting material; Developing the first initial charge carrier injection layer, the first initial charge carrier transport layer, and the first initial light-emitting pattern stacked on top of each other, thereby forming the first charge carrier injection layer, the first charge carrier transport layer, and the first light-emitting pattern stacked on top of each other. [37] Method for producing a light-emitting substrate according to claim 36, wherein forming the at least one first light-emitting component comprises: Forming the first electrode layer on the base substrate, wherein the first electrode layer comprises the first electrode of the at least one first light-emitting device; Forming the first initial charge carrier injection layer on the side of the first electrode layer facing away from the base substrate, wherein the material of the first initial charge carrier injection layer comprises the first charge carrier injection material, or the first charge carrier injection material and the third photosensitive material; Exposure of the first initial charge carrier injection layer, thereby converting the material of the exposed section of the first initial charge carrier injection layer into the first crosslinked charge carrier injection material; Forming the first initial charge carrier transport layer and the first initial light-emitting pattern successively on a side of the first charge carrier injection layer facing away from the base substrate, wherein the material of the first initial charge carrier transport layer comprises the first charge carrier transport material, or the first charge carrier transport material and the second photosensitive material; and the material of the first initial light-emitting pattern comprises the first quantum dot material, or the first quantum dot material and the first photosensitive material; Exposure of the first initial charge carrier transport layer and the first initial light-emitting pattern stacked on top of each other, thereby converting the material of the exposed section of the first initial charge carrier transport layer into the first crosslinked charge carrier transport material, and converting the material of the exposed section of the first initial light-emitting pattern into the first crosslinked light-emitting material; Developing the first initial charge carrier injection layer, the first initial charge carrier transport layer, and the first initial light-emitting pattern stacked on top of each other, thereby forming the first charge carrier injection layer, the first charge carrier transport layer, and the first light-emitting pattern stacked on top of each other. [38] Method for producing a light-emitting substrate according to claim 35 or 36, wherein the method for producing a light-emitting component according to claim 4 is used, wherein the formation of the multiple light-emitting components on the base substrate further comprises the formation of at least one second light-emitting component and the formation of at least one third light-emitting component, wherein the multiple light-emitting components further comprise the at least one second light-emitting component, and wherein each of the at least one second light-emitting component comprises a second sacrificial layer group, wherein, in a case in which the second sacrificial layer group comprises a second charge carrier transport layer, the formation of the at least one second light-emitting component comprises the following: Forming a second initial charge carrier transport layer and a second initial light-emitting pattern successively on a side of the first electrode layer and the at least one first light-emitting device facing away from the base substrate, wherein the material of the second initial charge carrier transport layer comprises a second charge carrier transport material, or a second charge carrier transport material and a fifth photosensitive material; and the material of the second initial light-emitting pattern comprises a second quantum dot material, or a second quantum dot material and a fourth photosensitive material; Exposure of the second initial charge carrier transport layer and the second initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the second initial charge carrier transport layer into a second crosslinked charge carrier transport material, and converting the material of an exposed section of the second initial light-emitting pattern into a second crosslinked light-emitting material; Developing the second initial charge carrier transport layer and the second initial light-emitting pattern stacked on top of each other, thereby forming the second charge carrier transport layer and the second light-emitting pattern stacked on top of each other, wherein the multiple light-emitting devices further comprise the at least one third light-emitting device, and wherein each of the at least one third light-emitting device comprises a third sacrificial layer group, wherein, in a case in which the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the formation of the at least one third light-emitting device comprises the following: Forming a third initial charge carrier transport layer and a third initial light-emitting pattern successively on a side of the first electrode layer, the at least one first light-emitting device, and the at least one second light-emitting device facing away from the base substrate, wherein the material of the third initial charge carrier transport layer comprises a third charge carrier transport material, or a third charge carrier transport material and an eighth photosensitive material; and the material of the third initial light-emitting pattern comprises a third quantum dot material, or a third quantum dot material and a seventh photosensitive material; Exposure of the third initial charge carrier transport layer and the third initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the third initial charge carrier transport layer into a third crosslinked charge carrier transport material, and converting the material of an exposed section of the third initial light-emitting pattern into a third crosslinked light-emitting material; Developing the third initial charge carrier transport layer and the third initial light-emitting pattern stacked on top of each other, forming the third charge carrier transport layer and the third light-emitting pattern stacked on top of each other. [39] Method for producing a light-emitting substrate according to claim 35 or 36, wherein the method for producing a light-emitting component according to claim 5 is used, wherein the formation of the multiple light-emitting components on the base substrate further comprises the formation of at least one second light-emitting component and the formation of at least one third light-emitting component, wherein the multiple light-emitting devices further comprise the at least one second light-emitting device, and wherein each of the at least one second light-emitting device comprises a second sacrificial layer group, wherein, in a case in which the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the formation of the at least one second light-emitting device comprises the following: Forming a second initial charge carrier injection layer, a second initial charge carrier transport layer, and a second initial light-emitting pattern successively on a side of the first electrode layer and the at least one first light-emitting device facing away from the base substrate, wherein the material of the second initial charge carrier injection layer comprises a second charge carrier injection material, or a second charge carrier injection material and a sixth photosensitive material; the material of the second initial charge carrier transport layer comprises a second charge carrier transport material, or a second charge carrier transport material and a fifth photosensitive material; and the material of the second initial light-emitting pattern comprises a second quantum dot material, or a second quantum dot material and a fourth photosensitive material; Exposure of the second initial charge carrier injection layer, the second initial charge carrier transport layer, and the second initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the second initial charge carrier injection layer into a second crosslinked charge carrier injection material, the material of an exposed section of the second initial charge carrier transport layer into a second crosslinked charge carrier transport material, and the material of an exposed section of the second initial light-emitting pattern into a second crosslinked light-emitting material; Developing the second initial charge carrier injection layer, the second initial charge carrier transport layer, and the second initial light-emitting pattern stacked on top of each other, thereby forming the second charge carrier injection layer, the second charge carrier transport layer, and the second light-emitting pattern stacked on top of each other. wherein the multiple light-emitting devices further comprise the at least one third light-emitting device, and wherein each of the at least one third light-emitting device comprises a third sacrificial layer group, wherein, in a case in which the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the formation of the at least one third light-emitting device comprises the following: Forming a third initial charge carrier injection layer, a third initial charge carrier transport layer, and a third initial light-emitting pattern successively on a side of the first electrode layer, the at least one first light-emitting device, and the at least one second light-emitting device facing away from the base substrate, wherein the material of the third initial charge carrier injection layer comprises a third charge carrier injection material, or a third charge carrier injection material and a ninth photosensitive material; the material of the third initial charge carrier transport layer comprises a third charge carrier transport material, or a third charge carrier transport material and an eighth photosensitive material;as well as the material of the third initial light-emitting pattern comprising a third quantum dot material, or a third quantum dot material and a seventh light-sensitive material; Exposure of the third initial charge carrier injection layer, the third initial charge carrier transport layer, and the third initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the third initial charge carrier injection layer into a third crosslinked charge carrier injection material, the material of an exposed section of the third initial charge carrier transport layer into a third crosslinked charge carrier transport material, and the material of an exposed section of the third initial light-emitting pattern into a third crosslinked light-emitting material; Developing the third initial charge carrier injection layer, the third initial charge carrier transport layer and the third initial light-emitting pattern stacked on top of each other, forming the third charge carrier injection layer, the third charge carrier transport layer and the third light-emitting pattern stacked on top of each other. [40] Method for producing a light-emitting substrate according to claim 35 or 36, wherein the method for producing a light-emitting component according to claim 5 is used, wherein the formation of the multiple light-emitting components on the base substrate further comprises the formation of at least one second light-emitting component and the formation of at least one third light-emitting component, wherein the multiple light-emitting devices further comprise the at least one second light-emitting device, and wherein each of the at least one second light-emitting device comprises a second sacrificial layer group, wherein, in a case in which the second sacrificial layer group comprises a second charge carrier transport layer and a second charge carrier injection layer, the formation of the at least one second light-emitting device comprises the following: Forming a second initial charge carrier injection layer on a side of the first electrode layer and of the at least one first light-emitting device facing away from the base substrate, wherein the material of the second initial charge carrier injection layer comprises a second charge carrier injection material, or a second charge carrier injection material and a sixth photosensitive material; Exposure of the second initial charge carrier injection layer, thereby converting the material of an exposed section of the second initial charge carrier injection layer into a second cross-linked charge carrier injection material; Forming a second initial charge carrier transport layer and a second initial light-emitting pattern successively on a side of the second initial charge carrier injection layer facing away from the base substrate, wherein the material of the second initial charge carrier transport layer comprises a second charge carrier transport material, or a second charge carrier transport material and a fifth photosensitive material; and the material of the second initial light-emitting pattern comprises a second quantum dot material, or a second quantum dot material and a fourth photosensitive material; Exposure of the second initial charge carrier transport layer and the second initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the second initial charge carrier transport layer into a second crosslinked charge carrier transport material, and converting the material of an exposed section of the second initial light-emitting pattern into a second crosslinked light-emitting material; Developing the second initial charge carrier injection layer, the second initial charge carrier transport layer, and the second initial light-emitting pattern stacked on top of each other, thereby forming the second charge carrier injection layer, the second charge carrier transport layer, and the second light-emitting pattern stacked on top of each other. wherein the multiple light-emitting devices further comprise the at least one third light-emitting device, and wherein each of the at least one third light-emitting device comprises a third sacrificial layer group, wherein, in a case in which the third sacrificial layer group comprises a third charge carrier transport layer and a third charge carrier injection layer, the formation of the at least one third light-emitting device comprises the following: Forming a third initial charge carrier injection layer on a side of the first electrode layer, the at least one first light-emitting device and the at least one second light-emitting device facing away from the base substrate, wherein the material of the third initial charge carrier injection layer comprises a third charge carrier injection material, or a third charge carrier injection material and a ninth photosensitive material; Exposure of the third initial charge carrier injection layer, thereby converting the material of an exposed section of the third initial charge carrier injection layer into a third crosslinked charge carrier injection material; Forming a third initial charge carrier transport layer and a third initial light-emitting pattern successively on a side of the third initial charge carrier injection layer facing away from the base substrate, wherein the material of the third initial charge carrier transport layer comprises a third charge carrier transport material, or a third charge carrier transport material and an eighth photosensitive material; and the material of the third initial light-emitting pattern comprises a third quantum dot material, or a third quantum dot material and a seventh photosensitive material; Exposure of the third initial charge carrier transport layer and the third initial light-emitting pattern stacked on top of each other, thereby converting the material of an exposed section of the third initial charge carrier transport layer into a third crosslinked charge carrier transport material, and converting the material of an exposed section of the third initial light-emitting pattern into a third crosslinked light-emitting material; Developing the third initial charge carrier injection layer, the third initial charge carrier transport layer and the third initial light-emitting pattern stacked on top of each other, forming the third charge carrier injection layer, the third charge carrier transport layer and the third light-emitting pattern stacked on top of each other. [41] Method for producing a light-emitting substrate according to claim 39 or 40, wherein the method for producing a light-emitting substrate according to claim 25 is used, wherein in an initial light-emitting pattern there is a ratio of a mass of the photosensitive material of the first category to a mass of the quantum dot material in a range of 0% to 30%, wherein the initial light-emitting pattern is one of the first initial light-emitting pattern, the second initial light-emitting pattern and the third initial light-emitting pattern; and / or wherein in an initial charge carrier transport layer the ratio of a mass of the photosensitive material of the second category to a mass of the charge carrier transport material is in the range of 0% to 30%, wherein the initial charge carrier transport layer is one of the first initial charge carrier transport layer, the second initial charge carrier transport layer and the third initial charge carrier transport layer; and / or wherein in an initial charge carrier injection layer the ratio of a mass of the photosensitive material of the third category to a mass of the charge carrier injection material is in a range of 0% to 30%, wherein the initial charge carrier injection layer is one of the first initial charge carrier injection layer, the second initial charge carrier injection layer and the third initial charge carrier injection layer. [42] Light-emitting device comprising a light-emitting substrate according to any one of claims 1 to 34 and a driver chip for driving the light-emitting substrate to emit light.

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