Solar cell, tandem solar cell and photovoltaic module

Abstract

solar cell formed by a segmented solar cell, having a passivation stack (101) formed on at least one segmentation surface (110a) of the segmented solar cell (110); wherein the passivation stack (101) has at least a first passivation layer (111) and a second passivation layer (121) formed above the first passivation layer (111) along a first direction (X) perpendicular to the segmentation surface (110a); wherein the first passivation layer (111) contains a silicon oxide material, wherein the second passivation layer (121) contains a metal oxide material, and wherein a metal in the metal oxide material comprises at least one element of aluminium, titanium, zinc, zirconium, hafnium, molybdenum, tungsten or nickel.

Description

TECHNICAL AREA

[0001] Embodiments of the present disclosure relate to the field of photovoltaics and in particular to a solar cell, a tandem solar cell and a photovoltaic module. GENERAL STATE OF THE ART

[0002] A photovoltaic module consists of several identical solar cells connected in series and / or parallel. The operating current of an original solar cell is relatively high, and this high current typically results in significant resistance loss as it flows through the interconnects between the original solar cells of the photovoltaic module. To address this problem of relatively high power loss in the original solar cells, laser cutting technology is used to divide an original solar cell into half-cells or multiple segmented solar cells. These segmented solar cells are then connected in series using conductive solder strips. In this way, the series current is lower compared to the current in a single original solar cell, and the reduced current across the segmented solar cells can mitigate the power loss of the photovoltaic module.

[0003] During the laser cutting process, an original solar cell is partially melted by a laser along a predetermined path and then segmented along the same path under mechanical force. However, the segmented solar cells are left with cut edges, each exhibiting a laser damage area and a mechanical fracture area. This causes the silicon atoms at the cut edges to be out of their original ordered state, resulting in a large number of free-hanging bonds and defects that become effective charge carrier recombination centers. Consequently, a large number of charge carriers recombine at these recombination centers, significantly reducing the photoelectric conversion efficiency of the segmented solar cells. BRIEF SUMMARY OF THE INVENTION

[0004] Embodiments of the present disclosure provide a solar cell, a tandem solar cell and a photovoltaic module which are at least conducive to improving the efficiency of the photoelectric conversion of solar cells having segmented solar cells.

[0005] According to some embodiments of the present disclosure, in one aspect of the embodiments of the present disclosure, a solar cell formed by a segmented solar cell is provided, the solar cell having a passivation stack formed at least on one segmentation surface of the segmented solar cell; wherein the passivation stack has at least a first passivation layer and a second passivation layer formed above the first passivation layer along a first direction perpendicular to the segmentation surface, wherein the first passivation layer contains a silicon oxide material, wherein the second passivation layer contains a metal oxide material, and wherein a metal in the metal oxide material comprises at least one element of aluminum, titanium, zinc, zirconium, hafnium, molybdenum, tungsten, or nickel.

[0006] In some embodiments, the segmented solar cell is an N-fold divided solar cell formed by segmenting an original solar cell, wherein N is a positive integer greater than or equal to 2, wherein the segmented solar cell has at least one segmentation surface, and the passivation stack is formed on each of the least one segmentation surface.

[0007] In some embodiments, the segmented solar cell has a non-segmented side surface; and the segmented solar cell has a base, wherein the base has a first main surface and a second main surface opposite to each other along a second direction, the second direction being a thickness direction of the segmented solar cell; a first main passivation film formed on the first main surface; a second main passivation film formed on the second main surface; and a side passivation film formed on the side surface, wherein the side passivation film and the first main passivation film contain the same material, or the side passivation film and the second main passivation film contain the same material.

[0008] In some embodiments, the segmented solar cell comprises an interdigitated back contact solar cell (IBC solar cell), a tunnel oxide passivated contact solar cell (TOPCon solar cell), or a passivated emitter and real cell solar cell (PERC solar cell).

[0009] In some embodiments, the passivation stack is further formed on a part of a surface of the first main passivation film facing away from the first main surface and / or the passivation stack is further formed on a part of a surface of the second main passivation film facing away from the second main surface.

[0010] In some embodiments, the area ratio of the portion of the surface of the first main passivation film provided with the passivation stack to the surface of the first main passivation film is not greater than 5%, and / or the area ratio of the portion of the surface provided with the passivation stack to the surface of the second main passivation film is not greater than 5%.

[0011] In some embodiments, the solar cell further comprises an edge solder pad; wherein the edge solder pad is formed at an edge of the first main surface, and a gap is formed between the passivation stack formed on the surface of the first main passivation film and the edge solder pad; and / or the edge solder pad is formed at an edge of the second main surface, and a gap is formed between the passivation stack formed on the surface of the second main passivation film and the edge solder pad.

[0012] In some embodiments, the passivation stack further includes an intermediate passivation layer, wherein the intermediate passivation layer is formed between the first passivation layer and the second passivation layer, wherein both the intermediate passivation layer and the first passivation layer contain silicon, and the intermediate passivation layer and the second passivation layer contain the same metal.

[0013] In some embodiments, the intermediate passivation layer material contains a silicon oxide and an oxide of the metal.

[0014] In some embodiments, the intermediate passivation layer and the first passivation layer have first surfaces that are in contact with each other, and the intermediate passivation layer and the second passivation layer have second surfaces that are in contact with each other; wherein the silicon content on the first surface is higher than that on the second surface, and the metal content on the first surface is lower than that on the second surface.

[0015] In some embodiments, the silicon content in the intermediate passivation layer exhibits a substantially decreasing profile along a direction leading from the first passivation layer to the second passivation layer, while the metal content in the intermediate passivation layer exhibits a substantially increasing profile.

[0016] In some embodiments, the thickness of the first passivation layer is less than the thickness of the intermediate passivation layer, and the thickness of the intermediate passivation layer is less than that of the second passivation layer.

[0017] In some embodiments, the thickness of the first passivation layer is in the range of 1 nm to 10 nm, the thickness of the second passivation layer is in the range of 20 nm to 100 nm, and the thickness of the intermediate passivation layer is in the range of 4 nm to 15 nm.

[0018] In some embodiments, the intermediate passivation layer further contains oxygen, and the intermediate passivation layer contains a silicon content in the range of 2% to 60%, a metal content in the range of 2% to 50%, and an oxygen content in the range of 38% to 50%.

[0019] In some embodiments, the first passivation layer contains a silicon content in the range of 60% to 98%, and an oxygen content in the range of 2% to 40%.

[0020] In some embodiments, the second passivation layer contains a metal content in the range of 45% to 65%, and an oxygen content in the range of 35% to 55%.

[0021] In some embodiments, the first passivation layer has a third surface facing away from the second passivation layer and a first surface adjacent to the second passivation layer; wherein the silicon content on the third surface is higher than that on the first surface, and the oxygen content on the third surface is lower than that on the first surface.

[0022] In some embodiments, the second passivation layer has a fourth surface facing away from the first passivation layer and a second surface adjacent to the first passivation layer; wherein the oxygen content on the second surface is higher than that on the fourth surface, and the metal content on the second surface is lower than that on the fourth surface.

[0023] According to some embodiments of the present disclosure, in another aspect of the embodiments of the present disclosure, a tandem solar cell is further provided, comprising a lower solar cell, wherein the lower solar cell is the solar cell according to one of the above embodiments, and the segmented solar cell has a front surface and a back surface that are opposite to each other along a second direction, wherein the segmentation surface connects the front surface and the back surface along the second direction, the second direction being a thickness direction of the segmented solar cell; and an upper solar cell located on the front surface of the lower solar cell.

[0024] According to some embodiments of the present disclosure, in yet another aspect of the present disclosure, a photovoltaic module is further provided comprising at least one solar cell string formed by connecting several solar cells according to one of the above embodiments, or by connecting several tandem solar cells according to one of the above embodiments; at least one packing adhesive film arranged to cover an area of ​​the at least one solar cell string; and at least one cover plate arranged to cover an area of ​​the packing adhesive film facing away from the at least one solar cell string.

[0025] The technical solutions provided in the embodiments of the present disclosure have at least the following advantages.

[0026] Based on the segmentation of the original solar cell to form segmented solar cells with segmentation surfaces, a passivation stack is placed on each of the segmentation surfaces and the passivation stack is used to perform good chemical passivation and field-effect passivation on the segmentation surface to reduce the probability of charge carrier recombination on the segmentation surface and to extend the lifetime of the charge carriers, thereby improving the efficiency of the photoelectric conversion of the segmented solar cell.

[0027] Specifically, the passivation stack is designed to contain at least a first passivation layer and a second passivation layer. The first passivation layer contains a silicon oxide material, and the segmentation surface is effectively chemically passivated by this silicon oxide material. For example, saturating the free-hanging bonds of the segmentation surface with oxygen atoms reduces the density of defect states on the segmentation surface, and reducing the number of recombination centers on the segmentation surface decreases the probability of charge carrier recombination. The second passivation layer contains a metal oxide material, and the metal in the metal oxide material comprises at least one element from aluminum, titanium, zinc, zirconium, hafnium, molybdenum, tungsten, or nickel.The metal in the second passivation layer results in a high density of solid charges in this layer. These high-density charges generate a stronger electric field, thus achieving effective field-effect passivation at the segmentation surface. For example, a strong band bending effect is created between the second passivation layer and the segmentation surface. This inhibits the migration of minority charge carriers to the segmentation surface and reduces their concentration there, thereby decreasing the probability of recombination between majority and minority charge carriers at the segmentation surface.In this way, the first passivation layer and the second passivation layer work together to significantly improve the efficiency of the photoelectric conversion of the segmented solar cell, thereby improving the efficiency of the photoelectric conversion of the solar cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] With reference to the corresponding accompanying drawing(s), one or more embodiments are explained by way of example, these exemplary representations not constituting any limitations on the embodiments. Unless otherwise stated, the accompanying drawings do not represent any limitations on scale. To more clearly illustrate the technical solutions in related technologies or in the embodiments of this disclosure, the drawings to be used in describing the embodiments are briefly described below. It is clear that the drawings mentioned in the following description are only some embodiments of this disclosure. Persons skilled in the art can derive other drawings from these drawings without any inventive effort. Fig. Figure 1 is a first structural partial sectional view of a solar cell according to an embodiment of the present disclosure; Fig. 2 is a schematic top view of a single original solar cell that has been segmented into two segmented solar cells, according to an embodiment of the present disclosure; Fig. 3 is a schematic top view of a single original solar cell that has been segmented into four segmented solar cells, according to an embodiment of the present disclosure; Fig. 4 is a schematic top view of a single original solar cell that has been segmented into nine segmented solar cells according to an embodiment of the present disclosure; Fig. Figure 5 is a second structural partial sectional view of a solar cell according to an embodiment of the present disclosure; Fig. Figure 6 is a third structural partial sectional view of a solar cell according to an embodiment of the present disclosure; Fig. Figure 7 is a fourth structural partial sectional view of a solar cell according to an embodiment of the present disclosure; Fig. Figure 8 is a fifth structural partial sectional view of a solar cell according to an embodiment of the present disclosure; Fig. Figure 9 is a sixth structural partial sectional view of a solar cell according to an embodiment of the present disclosure; Fig. 10 is a partial top view of a solar cell according to an embodiment of the present disclosure; Fig. Figure 11 is a seventh structural partial sectional view of a solar cell according to an embodiment of the present disclosure; Fig. 12 is a structural partial sectional view of a segmented solar cell and a passivation stack in a solar cell according to an embodiment of the present disclosure; Fig. Figure 13 is a diagram of the ratio of the elements in the segmented solar cell and the passivation stack, which are shown in Fig. 12 are shown; Fig. Figure 14 is a structural partial sectional view of a tandem solar cell according to another embodiment of the present disclosure; Fig. Figure 15 is a schematic, partially perspective view of a photovoltaic module according to yet another embodiment of the present disclosure; and Fig. 16 is a structural sectional view along a section direction MMI in Fig. 15. DETAILED DESCRIPTION OF THE EXECUTION FORMS

[0029] As can be seen from the general state of the art, the efficiency of the photoelectric conversion of the solar cell must be improved after segmentation.

[0030] Embodiments of the present disclosure provide a solar cell, a tandem solar cell, and a photovoltaic module. In the solar cell, based on the segmentation of the original solar cell to form segmented solar cells with segmentation surfaces, a passivation stack is arranged on each of the segmentation surfaces, the passivation stack comprising at least a first passivation layer and a second passivation layer. On the one hand, the first passivation layer contains a silicon oxide material, and the segmentation surface is chemically passivated well by the silicon oxide material. For example, by saturating the free-hanging bonds of the segmentation surface with oxygen atoms, the density of the defect states of the segmentation surface is reduced, and by reducing the recombination centers of the segmentation surface, the probability of charge carrier recombination is reduced.On the other hand, the second passivation layer contains a metal oxide material and includes at least one metal element from aluminum (Al), titanium (Ti), zinc (Zn), zirconium (Zr), hafnium (Hf), molybdenum (Mb), tungsten (W), or nickel (Ni). Due to the metal in the second passivation layer, the second passivation layer has a high density of solid charges to generate a strong electric field, thereby achieving good field-effect passivation at the segmentation surface. For example, strong band bending is generated between the second passivation layer and the segmentation surface, which prevents minority charge carriers from migrating to the segmentation surface and reduces the concentration of minority charge carriers there. This contributes to reducing the probability of majority and minority charge carrier recombination at the segmentation surface.In this way, the first passivation layer and the second passivation layer work together to significantly improve the efficiency of the photoelectric conversion of the segmented solar cell, thereby improving the efficiency of the photoelectric conversion of the solar cell.

[0031] In the description of the embodiments of this disclosure, the technical terms "first," "second," and the like are intended merely to distinguish different objects and cannot be understood as indicating or suggesting a relative importance or implicitly indicating a number, a specific order, or a dominant-subordinate relationship of the specified technical features. Unless expressly stated otherwise, "several" in the description of the embodiments of this disclosure means two or more.

[0032] The term "embodiment" as used here means that certain features, structures, or properties described in combination with the embodiments may be included in at least one embodiment of the present disclosure. Wording appearing at different points in the description does not refer to the same embodiment, nor to separate or alternative embodiments that are mutually exclusive with other embodiments. Those skilled in the art understand, expressly and implicitly, that the embodiments described herein may be combined with other embodiments.

[0033] In the description of the embodiments of the present disclosure, the expression "and / or" merely represents an associative relationship that describes related objects and indicates that three relationships are possible. For example, A and / or B indicates the three cases of A alone, A and B together, and B alone. Furthermore, the symbol " / " generally indicates an "or" relationship between the related objects.

[0034] In the description of the embodiments of the present disclosure, the term "several" means more than two (including two). Likewise, "several groups" means more than two (including two) groups and "several parts" means more than two (including two) parts.

[0035] In the description of the embodiments of the present disclosure, the orientation or position relationships indicated by the technical terms "central", "longitudinal", "transverse", "length", "width", "thickness", "top", "bottom", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like are based on the orientation or position relationships shown in the accompanying drawings and are intended to facilitate the description of the present disclosure and only to simplify the description, rather than to indicate or suggest that the said device or element must have a certain orientation or be constructed and operated in a certain orientation, and are therefore not to be interpreted as limiting the embodiments of the present disclosure.

[0036] Unless expressly stated and defined otherwise, the technical terms "attach," "connect," "join," and "fix" in the description of the embodiments of this disclosure should be understood in a broad sense, encompassing, for example, a permanent connection, a detachable connection, or a one-piece connection; a mechanical connection or an electrical connection; or a direct connection, an indirect connection via an intermediate medium, an internal connection between two elements, or an interaction between two elements. Persons skilled in the art will be able to understand the specific meanings of these terms in the embodiments of this disclosure depending on the specific circumstances.

[0037] In the drawings corresponding to the embodiments of the present disclosure, the thickness and area dimensions of a layer are exaggerated for clarity and to simplify the description. When it is described that a component (such as a layer, a surface, an area, or a base) is located on top of another component or on a surface of another component, the component may be located "directly" on the surface of the other component, or a third component may be present between the two components. Conversely, when it is described that a component is located on the surface of another component, or that another component is formed or provided on a surface of a component, no third component is present between the two components.And when it is described that one component is formed “essentially” on another component, this means that the component is formed neither on the entire surface (or a front surface) of the other component, nor on part of a boundary of the entire surface.

[0038] When, in the description of the embodiments of the present disclosure, a component "has" another component, other components are not excluded and may also be present unless otherwise specified. And when a component such as a layer, film, region, or plate is described as being "on" another component, it may be "directly on" the other component (i.e., on a surface of the other component without any other components in between) or another component may be present between them. And when a component such as a layer, film, region, or plate is "directly on" a surface of another component, this means that no other components are present between them.

[0039] The terms used here in the description of the embodiments are intended to describe only specific embodiments and do not constitute a limitation. The term "component" used in the description of the described embodiments and in the accompanying claims is intended to include the plural form unless the context clearly indicates otherwise. The component comprises a single component such as a layer, a film, a region, or a plate.

[0040] With reference to the accompanying drawings, various embodiments of the present disclosure will be described in detail below. However, those skilled in the art will understand that many technical details are provided in the embodiments of the present disclosure to provide readers with a better understanding of these embodiments. The technical solutions claimed in the embodiments of the present disclosure can, however, also be implemented without these technical details and various modifications and adaptations based on the following embodiments.

[0041] One embodiment of the present disclosure provides a solar cell. The solar cell provided in one embodiment of the present disclosure will be described in detail below with reference to the accompanying drawings.

[0042] With reference to Fig. 1 or Fig. 2. The solar cell is formed by at least one segmented solar cell 110. The segmented solar cells 110 are formed by segmenting a whole solar cell 100. Each segmented solar cell 110 has a segmentation area 110a, which is formed in a segmentation process. The solar cell has a passivation stack 101, which is located at least on the segmentation area 110a. The passivation stack 101 has at least a first passivation layer 111 and a second passivation layer 121 along a first direction X. The first passivation layer 111 contains a silicon oxide material, and the second passivation layer 121 contains a metal oxide material, wherein the metal in the metal oxide material comprises at least one of Al, Ti, Zn, Zr, Hf, Mo, W, or Ni. The first direction X is perpendicular to the segmentation area 110a.

[0043] It should be noted that Fig. 1 a first structural partial sectional view of a solar cell according to an embodiment of the present disclosure, and Fig. 2 is a schematic top view of a single original solar cell that has been segmented into two segmented solar cells according to an embodiment of the present disclosure.

[0044] In some cases, the segmented solar cell 110 may have many free-hanging bonds, mechanical damage caused by the segmentation process, or other surface defects on the segmentation surface 110a formed by the segmentation. Furthermore, various surface defects present on the segmentation surface 110a also readily introduce contaminants. These defects and contaminants easily act as recombination centers for electrode-hole pairs and shorten the lifetime of charge carriers, leading to a reduction in the photoelectric conversion efficiency of the segmented solar cell 110. It should be noted that the segmentation process includes, but is not limited to, laser cutting, and laser cutting also tends to leave laser damage on the segmentation surface.

[0045] Based on the fact that when segmenting the original solar cell 100 to form the segmented solar cell 110, a segmentation area 110a with more surface defects may remain on the segmented solar cell 110, a passivation stack 101 is arranged on the segmentation area 110a and the passivation stack 101 is used to perform good chemical passivation and field-effect passivation on the segmentation area 110a in order to reduce the probability of recombination of charge carriers on the segmentation area 110a and to extend the lifetime of the charge carriers, thereby improving the efficiency of the photoelectric conversion of the segmented solar cell 110.

[0046] Specifically, in the passivation stack 101, the first passivation layer 111 is designed to contain a silicon oxide material, whereby the segmentation surface 110a is chemically passivated by the silicon oxide material. For example, by saturating free-hanging bonds of the segmentation surface 110a with oxygen atoms at the first passivation layer 111, the density of defect states of the segmentation surface 110a is reduced, and by reducing recombination centers of the segmentation surface 110a, the probability of charge carrier combination is reduced. Furthermore, the second passivation layer 121 is designed to contain a metal oxide material, wherein the metal element in the metal oxide material comprises at least one of Al, Ti, Zn, Zr, Hf, Mo, W, and Ni.Due to the metal in the second passivation layer 121, the second passivation layer 121 exhibits high-density solid charges, which can generate a stronger electric field, thus resulting in effective field-effect passivation at the segmentation surface 110a. For example, strong band bending is generated between the second passivation layer 121 and the segmentation surface 110a, which prevents the migration of minority charge carriers to the segmentation surface 110a and reduces the concentration of minority charge carriers at the segmentation surface 110a. This contributes to a reduction in the probability of recombination between majority and minority charge carriers at the segmentation surface 110a.In this way, the first passivation layer 111 and the second passivation layer 121 work together to significantly improve the efficiency of the photoelectric conversion of the segmented solar cell 110, thereby improving the efficiency of the photoelectric conversion of the solar cell 100.

[0047] Furthermore, the high density of the silicon oxide material promotes an increase in the density of the first passivation layer 111, resulting in high film stability for the first passivation layer 111. This contributes to the protection of the segmentation area 110a covered by the first passivation layer 111. For example, the penetration of external contaminants into the segmentation area 110a can be prevented.

[0048] Furthermore, the silicon oxide material also exhibits good anti-PID properties. Since complete isolation from the outside world is difficult to achieve with the packing material of the photovoltaic module, which is subsequently formed based on the solar cell 100, water vapor can penetrate the interior of the solar cell 100 in a humid environment through the packing material or a backplate used for edge sealing. In this case, the glass in the sealing material can generate sodium ions. Under an external electric field, these sodium ions can migrate to a surface of the solar cell and cause PID. As a result, the efficiency of the solar cell's photoelectric conversion is reduced.However, the silicon oxide material has good density and insulation, which has a positive effect on preventing water vapor from penetrating the segmentation area 110a and the segmented solar cell 110, thus exhibiting a good anti-PID effect. In this way, even if complete insulation is difficult to achieve with the packing material of the photovoltaic module and water vapor penetrates the environment in which the solar cell 100 is located through the packing material used for edge sealing, the film layer formed by the silicon oxide material prevents sodium ions in the glass within the packing material from migrating to the segmentation area 110a, thereby preventing PID phenomena and maintaining a higher photoelectric conversion rate of the solar cell 100.

[0049] In some cases, the first passivation layer 111 and the second passivation layer 121 are stacked along the first direction X on the segmentation surface 110a. In this case, the first passivation layer 111 is located closer to the segmentation surface 110a compared to the second passivation layer 121. For example, the first passivation layer 111 may cover the segmentation surface 110a. This facilitates the shortening of the migration path of oxygen atoms in the first passivation layer 111 to the surface defects on the segmentation surface 110a, thereby improving the chemical passivation effect of the oxygen atoms in the first passivation layer 111 on the segmentation surface 110a.Moreover, the grids of the first passivation layer 110, which contains the silicon oxide material, are a better match for the grids of the base in the segmented solar cell 110 compared to the second passivation layer 121, which contains the metal oxide material. This helps to avoid the problem of a large grid mismatch between the segmentation surface 110a and the second passivation layer 121 when the latter is in direct contact with the second passivation layer 121, thereby avoiding the problem of increased surface defects caused by a grid mismatch and thus improving the interfacial passivation effect at the segmentation surface 110a.

[0050] In some embodiments, in contrast to a case where, after segmenting the original solar cell 100, no passivation of the segmentation area 110a of the formed segmented solar cell 110 takes place, the passivation stack 101 is formed on the segmentation area 110a of the solar cell 100 provided in one embodiment, which leads to an increase in the open-circuit voltage V CC The solar cell 100 contributes to an increase of approximately 2.5 mV, an increase in the fill factor (FF) of approximately 0.70%, and an increase in the efficiency of the photoelectric conversion Eff of approximately 0.28%.

[0051] The embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings.

[0052] In some embodiments, the metal in the metal oxide material comprises Al. That is, the second passivation layer 121 contains an aluminum oxide material. On the one hand, the aluminum oxide material enables the second passivation layer 121 to have fixed negative charges with a high density (Q). r is approximately 10 12 cm -2 up to 10 13 cm -2), which contributes to improving the field passivation effect at the segmentation surface 110a, thereby reducing the probability of charge carrier recombination at the segmentation surface 110a and contributing to an improvement in the efficiency of the photoelectric conversion of the segmented solar cell 110. On the other hand, in a technology for forming the second passivation layer 121 that includes the aluminum oxide material, the second passivation layer 121 also contains a suitable amount of hydrogen ions, so that the second passivation layer 121 exhibits good hydrogen passivation at the segmentation surface 110a.For example, a suitable amount of hydrogen ions in the second passivation layer 121 can effectively saturate the free-hanging bonds on the segmentation surface 110a by migration and also prevent recombination with the charge carriers, which helps to ensure that the charge carriers can be brought together to corresponding electrodes in the segmented solar cell 110, thereby further improving the efficiency of the photoelectric conversion of the segmented solar cell 110.

[0053] In some other embodiments, the metal in the metal oxide material contains molybdenum oxide (Mo). That is, the second passivation layer 121 contains a molybdenum oxide material. On the one hand, the molybdenum oxide material enables the second passivation layer 121 to have a high work function and also contributes to good field passivation of the second passivation layer 121a at the segmentation surface 110a. On the other hand, in a technology for forming the second passivation layer 121 that includes the molybdenum oxide material, the second passivation layer 121 also contains a suitable amount of hydrogen ions, so that the second passivation layer 121 exhibits good hydrogen passivation at the segmentation surface 110a.

[0054] It should be noted that the two embodiments above are examples in which the metal oxide material in the second passivation layer 121 exhibits good passivation at the segmentation surface 110a. In practical applications, the metal in the metal oxide material comprises at least one of Al, Ti, Zn, Zr, and Hf, which can ensure that the second passivation layer has solid negative charges with a high density, thereby achieving good field passivation at the segmentation surface 110a. The metal in the metal oxide material comprises at least one of Mo, W, and Ni, which can ensure that the second passivation layer has solid positive charges with a high density or a high work function, thereby achieving good field passivation at the segmentation surface 110a.

[0055] For some embodiments, see Fig. 2, Fig. 3 or Fig. 4. Each segmented solar cell 110 is an N-fold divided solar cell formed by segmenting the original solar cell 100, where N is a positive integer greater than or equal to 2. Each segmented solar cell 110 has at least one segmentation surface 110a, and the passivation stack 101 is located on each segmentation surface 110a.

[0056] Fig. Figure 3 is a schematic top view of a single original solar cell that has been segmented into four segmented solar cells according to one embodiment of the present disclosure. Fig. Figure 4 is a schematic top view of a single original solar cell that has been segmented into nine segmented solar cells according to an embodiment of the present disclosure.

[0057] In some examples, N is, with reference to Fig. 2 two and each segmented solar cell 110 makes up 1 / 2 of the total solar cell 100. In other words, the segmented solar cell 110 is a half-solar cell.

[0058] In some cases, reference is still made to Fig. Bevels 100a are provided at corners where four side surfaces of the original solar cell 100 are sequentially connected. As a result, the bevels 100a are still present at corners where non-segmented side surfaces 100b are sequentially connected in the segmented solar cell 110, but no bevels are provided at corners of the segmented side surfaces 110a that are connected to side surfaces 110b in the segmented solar cell 110.

[0059] In some other examples, N is, with reference to Fig. 3 four and each segmented solar cell makes 110 ¼ of the original solar cell 100, in other words it is a solar cell divided into four parts.

[0060] In some cases, reference is still made to Fig. 3 a segmentation path on the original solar cell 100 a cross shape and the chamfer 100a is preserved at each corner of the segmented solar cell 110.

[0061] In some other cases, the original solar cell 100 can be successively divided along a fixed direction into four segmented solar cells 100, and then only two segmented solar cells 110 each have two corners where the chamfer 100a is preserved.

[0062] In some other examples, N is, with reference to Fig. 4 nine and each segmented solar cell makes 110 1 / 9 of the original solar cell 100, in other words it is a solar cell divided into nine parts.

[0063] It should be noted that the three examples above, which are in Fig. 2 to Fig. Figure 4 shows examples in which the original solar cell 100 has been divided into N segmented solar cells 100. In practical applications, the size of N can be adjusted according to the requirements. For example, N can be 3, 5, 6, 7, 8, 10, or the like. Furthermore, the segmentation path by which the original solar cell 100 is segmented is not limited to the embodiments of the present disclosure but can be flexibly adapted according to the requirements.

[0064] For some embodiments, see Fig. 2 and Fig. 4, the segmented solar cell 110 has non-segmented side surfaces 100b: Referring to Fig. 1 and Fig. 5. The segmented solar cell 110 can have a base 120, wherein the base has a first principal surface 120a and a second principal surface 120b, which are opposite to each other along a second direction Y, wherein the second direction Y is a thickness direction of the segmented solar cell 110 and the second direction intersects the first direction X; a first principal passivation film 130 located on the first principal surface 120a; a second principal passivation film 140 located on the second principal surface 120b; and a side passivation film 150 located on the side surface 110b. The side passivation film 150 and the first principal passivation film 130 contain the same material, or the side passivation film 150 and the second principal passivation film 140 contain the same material.

[0065] Fig. Figure 5 is a second structural partial sectional view of a solar cell according to an embodiment of the present disclosure.

[0066] It should be noted that with reference to Fig. 2 or Fig. 3 Each segmented solar cell 110 has non-segmented side faces 110b. In practical applications, the four side faces of a portion of the segmented solar cells 110 are all segmentation faces 110a formed by the segmentation. For example, the original solar cell 100 was designed with reference to Fig. 4 into nine segmented solar cells 110 in a 3*3 arrangement, and the four side faces of the segmented solar cell 110, which is located in the middle, are all segmentation surfaces 110a.

[0067] In some examples, the side passivation film 150, the first main passivation film 130 and the second main passivation film 140 contain the same material, so that the side passivation film 150, the first main passivation film 130 and the second main passivation film 140 can be formed by the same manufacturing process, which contributes to a simplification of the manufacturing process and reduces the manufacturing costs of the side passivation film 150, the first main passivation film 130 and the second main passivation film 140.

[0068] In some other examples, the first main passivation film 130 and the second main passivation film 140 can alternatively be formed by different manufacturing processes, and the side passivation film 150 can be formed by the same manufacturing process as one made from the first main passivation film 130 and the second main passivation film 140.

[0069] It should be noted that the specific structure of the side passivation film 150 differs from that of the passivation stack 101. For example, the side passivation film 150 has a single-layer structure, which differs from the stacked structure of the passivation stack 101. Alternatively, the side passivation film 150 also has a stacked structure, but the materials of at least some of the film layers in the side passivation film 150 differ from the materials in at least some of the film layers in the passivation stack 101.

[0070] In some cases, the side passivation film 150 and the passivation stack 101 cannot be formed by the same manufacturing process.

[0071] In some embodiments, the side passivation film 150 can have a stacked structure consisting of a first side passivation film, a second side passivation film, and a third side passivation film stacked along the X direction. In one example, the material of the first side passivation film can be silicon, the material of the second side passivation film can be aluminum oxide, and the material of the third side passivation film can be silicon nitride. The thickness of the second side passivation film in the first direction X can be 5 nm.

[0072] In some embodiments, the side passivation film 150 can have a single-layer structure and contains a silicon oxynitride material as one component. In one example, the thickness of the side passivation film 150 in the first direction X can be 70 nm.

[0073] For some embodiments, see Fig. 1 or Fig. 5, the segmented solar cell 110 can have a front surface 110c and a back surface 110d that are opposite to each other along the second direction Y. The segmentation surface 110a and the side surface 110b are both connected to the front surface 110c and the back surface 110d along the second direction Y. With reference to Fig. 5 is a surface of the first main passivation film 130 facing away from the first main surface 120a along the second direction Y, the front surface 110c, and a surface of the second main passivation film 140 facing away from the second main surface 120b along the second direction Y, the back surface 110d.

[0074] It should be noted that the segmentation area 110a and the side surface 110b not only comprise side surfaces of the base 120, but also side surfaces of the first main passivation film 130 and the second main passivation film 140. In other words, both the segmentation area 110a and the side surface 110b are side surfaces of the entire segmented solar cell 110.

[0075] In some embodiments, the segmented solar cell may comprise an interdigitated back contact solar cell (IBC solar cell), a tunnel oxide passivated contact solar cell (TOPCon solar cell), or a passivated emitter and real cell solar cell (PERC solar cell).

[0076] It should be noted that the above three types of solar cells can each have the passivation stack 101, the side passivation film 150, the first main passivation film 130 and the second main passivation film 140 of the above embodiments.

[0077] The following description is based on an example where the segmented solar cell 110 is a TOPCon solar cell.

[0078] For some embodiments, see Fig. 5 and Fig. 6, is Fig. 6. A third structural partial sectional view of a solar cell according to an embodiment of the present disclosure. The base 120 can comprise a substrate 160, wherein the substrate 160 has a third side 160a and a fourth side 160b, which are opposite to each other along the second direction Y, the third side 160b being adjacent to the first principal surface 120 and the fourth side 160b being adjacent to the second principal surface 120b; an emitter 170 located on the third side 160a; a tunneling dielectric layer 180 located on the fourth side 160b; and a doped conductive layer 190 located on a side of the tunneling dielectric layer 180 facing away from the fourth side 160b.The first main passivation film 130 is located on a side of the emitter 170 facing away from the third side 160a, and the second main passivation film 140 is located on a side of the doped conductive layer 190 facing away from the tunneling dielectric layer 180.

[0079] In some cases, the substrate 160 consists of a silicon-based material such as one or more monocrystalline silicon, polycrystalline silicon, amorphous silicon, and microcrystalline silicon. In some examples, the substrate 160 may be an N-type semiconductor base, the substrate 160 may contain an N-type dopant (such as phosphorus, arsenic, or antimony), the emitter may contain a P-type dopant, and the emitter 170 and the substrate 160 may form a PN junction.

[0080] In some cases, the segmented solar cell 110 can still be used with reference to Fig. 6 furthermore, a first electrode 122 is present, and the first electrode 122 is in electrical contact with the emitter 170. In one example, the first electrode 122 runs through the first main passivation film 130 and is in electrical contact with the emitter 170.

[0081] In some cases, the segmented solar cell 110 can still be used with reference to Fig. 6 furthermore, a second electrode 123 is present, and the second electrode 123 is in electrical contact with the doped conductive layer 190. In one example, the second electrode 123 extends through the second main passivation film 140 and is in electrical contact with the doped conductive layer 190.

[0082] In the above embodiments, in some embodiments both the first main passivation film 130 and the second main passivation film 140 have a single-layer structure or a stacked structure, and the materials of the first main passivation film 130 and the second main passivation film 140 can be at least one of silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbonitride, titanium oxide, hafnium oxide and aluminum oxide.

[0083] In some embodiments, the segmented solar cell 110 may further have solder pads located on the first electrode 122 and the second electrode 123 to facilitate the subsequent use of solder strips and solder pads for making electrical connections between adjacent segmented solar cells 110. Some of the solder pads will be described in detail later.

[0084] It should be noted that the fact that "the passivation stack 101 is located on at least the segmentation surface 110a" includes at least the following embodiments.

[0085] For some embodiments, see Fig. 7, is Fig. Figure 7 shows a fourth structural partial sectional view of a solar cell according to an embodiment of the present disclosure. The passivation stack 101 is further located on a portion of an area of ​​the first main passivation film 130 that faces away from the first main surface 120a along the second direction Y. It should be noted that in the step of forming the passivation stack 101, which covers the segmentation surface 110a, raw materials required for the production of the passivation stack 101 can diffuse over a certain distance to an area of ​​the first main passivation film 130 that is connected to the segmentation surface 110a. Therefore, the passivation stack 101 is also formed on a portion of the area of ​​the first passivation film 130 that faces away from the first main surface 120a along the second direction Y.

[0086] In some cases, the area ratio of the area provided with the passivation stack 101 on the surface of the first main passivation film 130, which faces away from the first main surface 120a along the second direction Y, to the total area is not greater than 5%. For example, the area ratio of the area where the passivation stack 101 is provided on the surface of the first main passivation film 130 to the total area may be 4.5%, 4%, 3.5%, 3%, 2.5%, 2%, or the like.In this way, the raw materials required for the production of the passivation stack 101 can diffuse over a short distance to the surface of the first main passivation film 130, which is beneficial to preventing the formation of the passivation stack 101 on the solder pads used to connect adjacent segmented solar cells 110, so that the step to sub-cell connection during the formation of a photovoltaic module is not affected.It should be noted that, particularly in the case of a solar cell where full utilization of the first main surface 120 is required, i.e., an increase in the light-receiving area of ​​the first main surface, controlling the area ratio of the region in which the passivation stack 101 is provided on the surface of the first main passivation film 130 to the total area is more useful for improving the conversion efficiency of the packed photovoltaic module if the conductor tracks on the first main surface 120a, i.e., the electrodes, become thinner or the conductor tracks are located closer to an edge of the first main surface 120a.

[0087] For some other embodiments, see Fig. 8, is Fig. Figure 8 shows a fifth structural partial sectional view of a solar cell according to an embodiment of the present disclosure. The passivation stack 101 is further located on a portion of an area of ​​the second main passivation film 140 that faces away from the second main surface 120b along the second direction Y. It should be noted that in the step of forming the passivation stack 101 covering the segmentation surface 110a, raw materials required for the production of the passivation stack 101 can diffuse over a certain distance to an area of ​​the second main passivation film 140 that is connected to the segmentation surface 110a. Therefore, the passivation stack 101 is also formed on a portion of the area of ​​the second passivation film 140 that faces away from the second main surface 120b along the second direction Y.

[0088] In some cases, the area ratio of the portion of the surface of the second passivation film 140 provided with the passivation stack 101 on the surface of the second main passivation film 140 facing away from the second main surface 120b along the second direction Y, to the total area of ​​the second main passivation film 140, is not greater than 5%. For example, the area ratio of the area where the passivation stack 101 is provided on the surface of the second main passivation film 140 to the total area may be 4.5%, 4%, 3.5%, 3%, 2.5%, 2%, or the like.In this way, the raw materials required for the production of the passivation stack 101 can diffuse over a short distance to the surface of the second main passivation film 140, which helps to prevent the formation of the passivation stack 101 on the solder pads used to connect adjacent segmented solar cells 110, so that the sub-cell connection step during the formation of a photovoltaic module is not affected.

[0089] For some other embodiments, see Fig. 9, is Fig. 9 A sixth structural partial sectional view of a solar cell according to an embodiment of the present disclosure. The passivation stack 101 is further located on a part of a surface of the first main passivation film 130 which faces away from the first main surface 120a along the second direction Y, and the passivation stack 101 is further located on a part of a surface of the second main passivation film 140 which faces away from the second main surface 120b along the second direction Y.

[0090] In some cases, the area ratio of the portion of the surface of the first main passivation film 130 that is provided with the passivation stack 101, on the surface of the first main passivation film 130 facing away from the first main surface 120a along the second direction Y, to the total surface of the first main passivation film 130, is not greater than 5%, and on the surface of the second main passivation film 140 that is facing away from the second main surface 120b along the second direction Y, the area ratio of the portion of the surface of the second main passivation film 140 that is provided with the passivation stack 101 to the total surface of the second main passivation film 140 is not greater than 5%.

[0091] It should be noted that for descriptions of the solder pads in the three embodiments above, reference should be made to the preceding embodiments. No details are described here.

[0092] For some embodiments, see Fig. 7 and Fig. 10. The solar cell may further comprise an edge solder pad 102. The edge solder pad 102 is located at an edge of the first main surface 120a, and a gap is formed between the passivation stack 101, which is located on the surface of the first main passivation film 130, and the edge solder pad 102. In some other embodiments, an edge solder pad (not shown) is located at an edge of the second main surface 120b, and a gap is formed between the passivation stack 101, which is located on the surface of the second main passivation film 140, and the edge solder pad. For some other embodiments, see Fig. 9, edge solder pads (not shown) are located at an edge of the first main surface 120a and an edge of the second main surface 120b, and a gap is formed between the passivation stack 101 and the edge solder pad (not shown).

[0093] This is beneficial to ensure that the passivation stack 101 does not cover the edge solder pad 102 and does not cover a solder pad in a central area of ​​the segmented solar cell 110, and can further help to prevent the passivation stack 101 from interfering with the sub-cell connection step during the formation of the photovoltaic module.

[0094] It should be noted that Fig. Figure 10 shows a structural partial sectional view of a solar cell according to an embodiment of the present disclosure. Furthermore, the edge solder pads 102 can be located on an edge of only one of the first main surface 120a and the second main surface 120, or on an edge of the first main surface 120a and on an edge of the second main surface 120b, based on various types of segmented solar cells 110. Fig. 10 only the edge solder pads 102, which are located on the first electrodes 122 in an edge region. In practical applications, a first electrode located in a central region also has solder pads, and a second electrode also has solder pads.

[0095] For some embodiments, see Fig. 11, is Fig. Figure 11 shows a seventh structural partial sectional view of a solar cell according to an embodiment of the present disclosure. The passivation stack 101 may further comprise an intermediate passivation layer 131. The intermediate passivation layer 131 is located between the first passivation layer 111 and the second passivation layer 121. Both the intermediate passivation layer 131 and the first passivation layer 111 contain silicon, and both the intermediate passivation layer 131 and the second passivation layer 121 contain the same metal.

[0096] It should be noted that the intermediate passivation layer 131 contains the same element as the first passivation layer 111, namely silicon, and also the same element as the second passivation layer 121, namely a metal. In this way, the silicon in the intermediate passivation layer 131 promotes better lattice matching at an interface where the intermediate passivation layer 131 is in contact with the first passivation layer 111, and the metal promotes better lattice matching at an interface where the intermediate passivation layer 131 is in contact with the second passivation layer 121. This helps to prevent the problem of lattice mismatch between the first passivation layer 111 and the second passivation layer 121 when they are in direct contact.so that the problem of increased surface defects caused by a grid mismatch is avoided and thereby an interface passivation effect of the passivation stack 101 on the segmented solar cell 110 is improved, such as an improved passivation effect on the segmentation surface 110a.

[0097] In other words, the intermediate passivation layer 131 fulfills the function of a transition to improve the adaptability of the grids at interfaces where the first passivation layer 111, the intermediate passivation layer 131 and the second passivation layer 121 are successively in contact, thus preventing gaps and displacements at the interfaces where the first passivation layer 111, the intermediate passivation layer 131 and the second passivation layer are successively in contact and improving the uniformity of the film layers in the passivation stack 101, thereby improving the interface passivation effect of the passivation stack 101 on the segmented solar cell 110.Moreover, the intermediate passivation layer 131 is conducive to improving the bond strength between the first passivation layer 111 and the intermediate passivation layer 131 and the bond strength between the intermediate passivation layer 131 and the second passivation layer 121, thereby preventing the problem of mutual slippage or detachment of the first passivation layer 111 and the intermediate passivation layer 131 or the intermediate passivation layer 131 and the second passivation layer 121 and improving the structural stability of the passivation stack 101.

[0098] In some embodiments, the material of the intermediate passivation layer 131 may contain a silicon oxide and a metal oxide.In this way, it can be ensured that the intermediate passivation layer 131 has the same element as the first passivation layer 111 and also the same element as the second passivation layer 121, so that the intermediate passivation layer 131 serves as a transition layer between the first passivation layer 111 and the second passivation layer 121, and oxygen atoms in the intermediate passivation layer 131 can be used to further saturate free-hanging bonds on the segmentation surface 110a due to migration of the oxygen atoms to the segmentation surface 110a, thereby further reducing the density of defect states of the segmentation surface 110a and thus reducing the recombination centers of the segmentation surface 110a, thereby reducing the probability of charge carrier recombination.

[0099] For some embodiments, see Fig. 12 and Fig. 13, the intermediate passivation layer 131 and the first passivation layer 111 have a first contact surface e, and the intermediate passivation layer 131 and the second passivation layer 121 have a second contact surface f. The silicon content at the first surface e is higher than the silicon content at the second surface f, and the metal content at the first surface e is lower than the metal content at the second surface f.

[0100] Fig. Figure 12 is a structural partial sectional view of a segmented solar cell and a passivation stack in a solar cell according to an embodiment of the present disclosure. Fig. Figure 13 is a diagram of the ratio of the elements in the segmented solar cell 110 and the passivation stack 101, which are in Fig. 12 are shown.

[0101] It should be noted that, firstly, the first passivation layer 111 contains a silicon oxide material. This ensures that the silicon content at the first contact surface e of the intermediate passivation layer 131 with the first passivation layer 111 is higher than the content at the second surface f. This results in the first surface e being silicon-rich compared to the second surface f, thereby increasing the silicon content at the first surface e, further improving the degree of lattice matching at the interface where the intermediate passivation layer 131 is in contact with the first passivation layer 111, and further reducing the density of defect states at the first surface e, thus further improving the passivation effect of the passivation stack 101 at the segmentation surface 110a. Secondly, the second passivation layer 121 contains a metal oxide material.This ensures that the metal content at the second contact surface f of the intermediate passivation layer 131 with the second passivation layer 121 is higher than the content at the first surface e, which contributes to the second surface f being rich in metal compared to the first surface e, thereby increasing the metal content at the second surface f, further improving the degree of matching between the grids at the interface where the intermediate passivation layer 131 is in contact with the second passivation layer 121, and further reducing the density of defect states at the second surface f, thereby further improving the passivation effect of the passivation stack 101 at the segmentation surface 110a.

[0102] For some embodiments, see Fig. 12 and Fig. 13, the silicon content in the intermediate passivation layer 131 shows a substantially decreasing profile along a direction leading from the first passivation layer 111 to the second passivation layer 121, while the metal content in the intermediate passivation layer 131 shows a substantially increasing profile.

[0103] It should be noted that the silicon content at the first surface e is higher than that at the second surface f, and the metal content at the first surface e is lower than that at the second surface f. Furthermore, the silicon content in the intermediate passivation layer 131 exhibits a generally decreasing profile along the direction from the first passivation layer 111 to the second passivation layer 121, while the metal content in the intermediate passivation layer 131 exhibits a generally increasing profile. In practice, the silicon and metal content in the intermediate passivation layer 131 can vary with changes in depth in the intermediate passivation layer 131 along the direction from the first passivation layer 111 to the second passivation layer 121; that is, they do not always exhibit a strictly decreasing or a strictly increasing profile.However, with changing depth, the overall trend of silicon content shows a decreasing profile, and the overall trend of metal content shows an increasing profile. Therefore, "essentially" below refers to the overall trend of the change in values. Furthermore, both the silicon and the metal in the intermediate passivation layer 131 exhibit a changing profile; that is, it changes partially, which contributes to an improvement in the stability of the performance of the intermediate passivation layer 131 and prevents sudden changes in performance due to sudden changes in the element content of the intermediate passivation layer.

[0104] For some embodiments, see Fig. 12 and Fig. 13, the intermediate passivation layer 131 may also contain oxygen and exhibits an oxygen content in the intermediate passivation layer 131 along the direction leading from the first passivation layer 111 to the second passivation layer 121, initially a substantially increasing profile and then a substantially decreasing profile.

[0105] It should be noted that, in order to improve the degree of matching between the grids at the interface where the intermediate passivation layer 131 is in contact with the first passivation layer 111, and the degree of matching between the grids at the interface where the intermediate passivation layer 131 is in contact with the second passivation layer 121, it is provided that the first surface e, where the intermediate passivation layer 131 is in contact with the first passivation layer 111, is rich in silicon and the second surface f, where the intermediate passivation layer 131 is in contact with the second passivation layer 121, is rich in metal.Therefore, a peak in the oxygen content in the intermediate passivation layer 131 is located in a central region along the direction leading from the first passivation layer 111 to the second passivation layer 121, to ensure that one end of the intermediate passivation layer 131 is silicon-rich while the other is metal-rich. Based on this, the oxygen content in the intermediate passivation layer 131 is designed to exhibit a predominantly increasing profile initially and a predominantly decreasing profile subsequently, to ensure a high passivation effect of the passivation stack 101 at the segmentation surface 110a.

[0106] It should be noted that in some embodiments, an increasing profile of a particular parameter means that the parameter essentially increases gradually. That is, the parameter has essentially increased gradually during the change. A decreasing profile of a particular parameter means that the parameter essentially decreases gradually. That is, the parameter has essentially decreased gradually during the change. In some other embodiments, an increasing profile means that the parameter essentially increases overall during the change, while the parameter may gradually decrease during a local change. A decreasing profile of a particular parameter means that the parameter essentially decreases overall during the change, while the parameter may gradually increase during a local change.In other embodiments, an increasing profile of a particular parameter means that the parameter increases essentially gradually, and a decreasing profile of a particular parameter means that the parameter decreases overall essentially while increasing essentially gradually during a local change. Alternatively, an increasing profile of a particular parameter means that the parameter increases overall essentially while decreasing essentially gradually during a local change, and a decreasing profile of a particular parameter means that the parameter decreases essentially gradually. The parameters mentioned above include, but are not limited to, the silicon content in the intermediate passivation layer 131, the metal content in the intermediate passivation layer 131, and the oxygen content in the intermediate passivation layer 131.

[0107] Furthermore, it Fig. Figure 13 merely represents an example of a changing profile of the ratios of silicon, metal, and oxygen content in a sub-region of the base 120 and the passivation stack 101 in the segmented solar cell 110. In practical applications, the change profile of the ratios of silicon, metal, and oxygen content in a sub-region of the base 120 and the passivation stack 101 in the segmented solar cell 110 may alternatively differ partially or entirely from the example shown in Figure 13. Fig. Figure 13 shows how to distinguish between them. In one example, the metal can be found in Fig. 13 be aluminum.

[0108] In some embodiments, a material of the intermediate passivation layer 131 can be a common oxide of silicon and aluminum, and a material of the second passivation layer 121 can be an aluminum oxide material.

[0109] For some embodiments, see Fig. 12, is a thickness D1 of the first passivation layer 111 along the first direction X less than a thickness D3 of the intermediate passivation layer 131 and the thickness of the intermediate passivation layer 131 less than a thickness D2 of the second passivation layer 121.

[0110] It should be noted that if the first passivation layer 111 contains a silicon oxide material and the thickness of the film layer containing the silicon oxide material along the first direction X, i.e., D1, is relatively small, it can be ensured that the first passivation layer 111 exhibits good chemical passivation at the segmentation surface 110a. A process for forming the first passivation layer 111 with a smaller thickness is simpler than forming the first passivation layer 111 with a larger thickness. Furthermore, if the thickness D1 of the first passivation layer 111 is smaller and the intermediate passivation layer 131 contains oxygen, this also facilitates the migration of oxygen atoms from the intermediate passivation layer 131 into the segmentation surface 110a, thereby further improving the chemical passivation at the segmentation surface 110a.

[0111] The intermediate passivation layer 131 serves as a transition layer between the first passivation layer 111 and the second passivation layer 121. As long as the thickness D3 of the intermediate passivation layer 131 is suitable along the first direction X, the migration of oxygen atoms in the intermediate passivation layer 131 to the segmentation surface 110a is facilitated. Furthermore, the second passivation layer 121 contains a metal oxide material. Along the first direction X, a greater thickness of the film layer containing the metal oxide material, within a certain thickness range, indicates a better field-effect passivation effect of the second passivation layer 121 at the segmentation surface 110a.Therefore, along the first direction X, it is provided that the thickness D2 of the second passivation layer 121 is greatest, the thickness D1 of the first passivation layer 111 is least, and the thickness D3 of the intermediate passivation layer 131 lies between D1 and D2, which can ensure that the first passivation layer 111 has a good chemical passivation effect at the segmentation surface 110a, can also ensure that the second passivation layer 121 can have a good field-effect passivation effect at the segmentation surface 110a, and is conducive to the migration of oxygen atoms in the intermediate passivation layer 131 to the segmentation surface 110a.

[0112] For some embodiments, see Fig. 12, the thickness D1 of the first passivation layer 111 can range from 1 nm to 10 nm along the first direction X. In some examples, the thickness D1 of the first passivation layer 111 can range from 4 nm to 7 nm and be, for example, 4.5 nm, 5 nm, 5.5 nm, 6 nm, 6.5 nm, or the like.

[0113] For some embodiments, see Fig. 12, the thickness D2 of the second passivation layer 121 can range from 20 nm to 100 nm along the first direction X. In some examples, the thickness D2 of the second passivation layer 121 can range from 40 nm to 60 nm and may be, for example, 45 nm, 48 nm, 50 nm, 53 nm, 55 nm, 58 nm, or the like.

[0114] For some embodiments, see Fig. In example 12, the thickness D3 of the intermediate passivation layer 131 can range from 4 nm to 15 nm along the first direction X. In some examples, the thickness D2 of the second passivation layer 121 can range from 8 nm to 12 nm and may be, for example, 8.5 nm, 9 nm, 50 nm, 9.5 nm, 10 nm, 10.5 nm, 11 nm, 11.5 nm, or the like.

[0115] In some embodiments, the intermediate passivation layer 131 may also contain oxygen, and the silicon content in the intermediate passivation layer 131 ranges from 2% to 60%, the metal content from 2% to 50%, and the oxygen content from 38% to 50%.

[0116] It should be noted that the statement that "the silicon content in the intermediate passivation layer 131 ranges from 2% to 60%" means that the average silicon content in the intermediate passivation layer 131 ranges from 2% to 60%, and that the silicon content in different areas of the intermediate passivation layer 131 may or may not be within the average value. Similarly, the statement that "the metal content in the intermediate passivation layer 131 ranges from 2% to 50%" means that the average metal content in the intermediate passivation layer 131 ranges from 2% to 50%, and that the metal content in different areas of the intermediate passivation layer 131 may or may not be within the average value.The statement that “the oxygen content in the intermediate passivation layer 131 ranges from 38% to 50%” means that an average value of the oxygen content in the intermediate passivation layer 131 ranges from 38% to 50% and that the oxygen content in different areas of the intermediate passivation layer 131 may or may not be within the average value.

[0117] Regarding the area with the highest silicon content in the intermediate passivation layer 131, for example, the area on the first surface e, the silicon content in this area ranges from 40% to 80% in some cases. For example, the silicon content in this area can be 60%. Regarding the area with the lowest silicon content in the intermediate passivation layer 131, for example, the area on the second surface f, the silicon content in this area can range from 2% to 5%. For example, the silicon content in this area can be 3%.

[0118] Regarding the area with the lowest metal content in the intermediate passivation layer 131, for example, the area on the first surface e, the metal content in this area ranges from 2% to 5% in some cases. For example, the metal content in this area can be 3%. Regarding the area with the highest metal content in the intermediate passivation layer 131, for example, the area on the second surface f, the metal content in this area can range from 30% to 70%. For example, the metal content in this area can be 50%.

[0119] Regarding the area with the highest oxygen content in the intermediate passivation layer 131, for example, the central area of ​​the intermediate passivation layer 131, the oxygen content in this area ranges from 45% to 60% in some cases. For example, the oxygen content in this area can be 60%. Regarding the area with the lowest oxygen content in the intermediate passivation layer 131, for example, the area at the first surface e or the second surface f, the oxygen content in this area can range from 20% to 40%. For example, the oxygen content in this area can be 20%.

[0120] It should be noted that in the intermediate passivation layer 131, the sum of the silicon content, the metal content, and the oxygen content may or may not be 100%. If the sum of the silicon content, the metal content, and the oxygen content is not 100%, the intermediate passivation layer 131 may also contain other impurity elements such as hydrogen, so that the intermediate passivation layer 131 also exhibits a hydrogen passivation effect at the segmentation surface 110a. It should be noted that in a technology for forming the second passivation layer 121, the second passivation layer 121 may contain impurity elements in addition to silicon, oxygen, and metal.

[0121] For some embodiments, see Fig. 12 and Fig. 13, the first passivation layer 111 has a third surface g along the first direction X, which faces away from the second passivation layer 121, and a first surface e next to the second passivation layer 121. The silicon content on the third surface g is higher than that on the first surface e, and the oxygen content on the third surface g is lower than that on the first surface e.

[0122] It should be noted that the third surface g is an interface where the first passivation layer 111 is in contact with the segmentation surface 110a. The majority of the segmentation surface 110a is formed by side faces of the substrate 160 in the segmented solar cell 110, and the substrate can consist of a silicon base material.As a result, the silicon content on the third surface g, where the first passivation layer 111 is in contact with the segmentation surface 110a, is designed to be higher than the content on the first surface e, which, compared to the first surface e, helps to make the third surface g rich in silicon, thereby contributing to an increase in the silicon content on the third surface g, which is rich in silicon, further improving the degree of matching between the lattices at the interface where the first passivation layer 111 is in contact with the segmentation surface 110a, and further reducing the density of the defect states on the third surface g, thereby further improving the passivation effect of the first passivation layer 111 on the segmentation surface 110a.In order to make the silicon content on the third surface g higher than the content on the first surface e, the oxygen content on the third surface g is also designed to be lower than the content on the first surface e in order to ensure a higher passivation effect of the first passivation layer 111 on the segmentation surface 110a.

[0123] For some embodiments, see Fig. 12 and Fig. 13. The silicon content in the first passivation layer 111 shows a generally decreasing profile along the direction from the first passivation layer 111 to the second passivation layer 121, while the oxygen content in the first passivation layer 111 shows a generally increasing profile. Thus, both the silicon and oxygen in the first passivation layer 111 exhibit a changing profile, that is, a gradual change, which contributes to an improvement in the stability of the performance of the first passivation layer 111 and prevents sudden changes in performance due to sudden changes in the element content in the first passivation layer 111.

[0124] It should be noted that the “exhibition of an increasing profile,” “certain circumstances associated with the exhibition of an increasing profile,” the “exhibition of a decreasing profile,” and “certain circumstances associated with the exhibition of a decreasing profile” have been described in detail above. The related descriptions, namely that “the silicon content in the first passivation layer 111 exhibits a decreasing profile” and “the oxygen content in the first passivation layer 111 exhibits an increasing profile,” are not described in detail here.

[0125] For some embodiments, see Fig. 12 and Fig. 13, the second passivation layer 121 has a fourth surface h along the first direction X, which faces away from the first passivation layer 111, and a second surface f next to the first passivation layer 111. The oxygen content on the second surface f is higher than that on the fourth surface h, and the metal content on the second surface f is lower than that on the fourth surface h.

[0126] It should be noted that regardless of whether the first passivation layer 111 and the second passivation layer 121 are in direct contact with each other or whether an intermediate passivation layer 131 is present between the first passivation layer 111 and the second passivation layer 121, the oxygen content on the second surface f is designed to be higher than the content on the fourth surface h, which, compared to the fourth surface h, contributes to making the second surface f rich in oxygen, which contributes to a migration of more oxygen atoms to the segmentation surface 110a, thereby improving the passivation effect of the passivation stack 101 on the segmentation surface 110a.In order to make the oxygen content on the second surface f higher than the content on the fourth surface h, the metal content on the second surface f is also designed to be lower than the content on the fourth surface h in order to ensure a higher passivation effect of the second passivation layer 121 on the segmentation surface 110a.

[0127] For some embodiments, see Fig. 12 and Fig. 13. The oxygen content in the second passivation layer 121 shows a generally decreasing profile along the direction from the first passivation layer 111 to the second passivation layer 121, while the metal content in the second passivation layer 121 shows a generally increasing profile. Thus, both the oxygen and the metal in the second passivation layer 121 exhibit a changing profile, that is, a gradual change, which contributes to an improvement in the stability of the performance of the second passivation layer 121 and prevents sudden changes in performance due to sudden changes in the element content in the second passivation layer 121.

[0128] It should be noted that the “exhibition of an increasing profile”, “certain circumstances associated with the exhibition of an increasing profile”, the “exhibition of a decreasing profile”, and “certain circumstances associated with the exhibition of a decreasing profile” have been described in detail above. The related descriptions, namely that “the oxygen content in the second passivation layer 121 exhibits a decreasing profile” and that “the metal content in the second passivation layer 121 exhibits an increasing profile”, are not described in detail here.

[0129] In some embodiments, the silicon content in the first passivation layer 111 ranges from 60% to 98% and the oxygen content from 2% to 40%.

[0130] It should be noted that the statement that "the silicon content in the first passivation layer 111 ranges from 60% to 98%" means that the average silicon content in the first passivation layer 111 ranges from 60% to 98%, and that the silicon content in different areas of the first passivation layer 111 may or may not be within the average value. Similarly, the statement that "the oxygen content in the first passivation layer 111 ranges from 2% to 40%" means that the average oxygen content in the first passivation layer 111 ranges from 2% to 40%, and that the oxygen content in different areas of the first passivation layer 111 may or may not be within the average value.

[0131] Regarding the area with the highest silicon content in the first passivation layer 111, for example, the area at the third surface g, the silicon content in this area ranges from 90% to 98% in some cases. For example, the silicon content in this area can be 95%. Regarding the area with the lowest silicon content in the first passivation layer 111, for example, the area at the first surface e, the silicon content in this area can range from 40% to 80%. For example, the silicon content in this area can be 60%.

[0132] Regarding the area with the lowest oxygen content in the first passivation layer 111, for example, the area at the third surface g, the oxygen content in this area ranges from 2% to 5% in some cases. For example, the oxygen content in this area can be 3%. Regarding the area with the highest oxygen content in the first passivation layer 111, for example, the area at the first surface 3, the oxygen content in this area can range from 20% to 60%. For example, the oxygen content in this area can be 40%.

[0133] It should be noted that the sum of the silicon and oxygen content of the first passivation layer 111 may or may not be 100%. If the sum of the silicon and oxygen content is not 100%, the first passivation layer 111 may also contain other impurities such as hydrogen, so that the first passivation layer 111 also exhibits a hydrogen passivation effect at the segmentation surface 110a. It should be noted that in a technology for forming the first passivation layer 111, the first passivation layer 111 may contain impurities other than silicon, oxygen, and metal.

[0134] In some embodiments, the metal content in the second passivation layer 121 ranges from 45% to 65% and the oxygen content from 35% to 55%.

[0135] It should be noted that the statement that "the metal content in the second passivation layer 121 ranges from 45% to 65%" means that the average metal content in the second passivation layer 121 ranges from 45% to 60%, and that the metal content in different areas of the second passivation layer 121 may or may not be within the average value. Similarly, the statement that "the oxygen content in the second passivation layer 121 ranges from 35% to 55%" means that the average oxygen content in the second passivation layer 121 ranges from 35% to 55%, and that the oxygen content in different areas of the second passivation layer 121 may or may not be within the average value.

[0136] Regarding the area with the highest metal content in the second passivation layer 121, for example, the area on the fourth surface h, the metal content in this area ranges from 55% to 75% in some cases. For example, the metal content in this area may be 70%. Regarding the area with the lowest metal content in the second passivation layer 121, the metal content in this area may range from 25% to 50%. For example, the metal content in this area may be 30%.

[0137] Regarding the area with the lowest oxygen content in the second passivation layer 121, the oxygen content in this area ranges from 25% to 45% in some cases. For example, the oxygen content in this area may be 30%. Regarding the area with the highest oxygen content in the second passivation layer 121, the oxygen content in this area may range from 50% to 70%. For example, the oxygen content in this area may be 55%.

[0138] It should be noted that the sum of the silicon and metal content of the second passivation layer 121 may or may not be 100%. If the sum of the silicon and metal content is not 100%, the second passivation layer 121 may also contain other impurities such as hydrogen, so that the second passivation layer 121 also exhibits a hydrogen passivation effect at the segmentation surface 110a. It should be noted that in a technology for forming the second passivation layer 121, the second passivation layer 121 may contain impurities other than silicon, oxygen, and metal.

[0139] In some embodiments, the first passivation layer 111 can consist of a Si a O b-Material, a / b ∈ [1,5, 49], consist of, where a / b represents a ratio of the silicon content to the oxygen content in the first passivation layer 121.

[0140] In some embodiments, the intermediate passivation layer 131 can consist of a SiAl i O j -Material, i / j ∈ [0,04, 1,31], consist of, where i / j represents a ratio of the aluminium content to the oxygen content in the intermediate passivation layer 131.

[0141] In some embodiments, the second passivation layer 121 can consist of an Al m O n -Material, m / n ∈ [1, 1,2], consist of, where m / n represents a ratio of the aluminium content to the oxygen content in the second passivation layer 121.

[0142] It should be noted that the mathematical formula Si a O bThe formula containing "a" and "b" represents the ratio of silicon content to oxygen content in the first passivation layer 111. The mathematical formula is SiAl i O j The formula containing "i" and "j" represents the ratio of the aluminum content to the oxygen content in the intermediate passivation layer 131. The mathematical formula Al m O n The 'm' and 'n' represent the ratio of the aluminum content to the oxygen content in the second passivation layer 121. Si a O b , SiAl i O j and Al m O n These are not strict chemical formulas or structures. Therefore, any combination of Si a O b -Material, which SiAl i O j -material and the Al m O nThe material may comprise one or more stoichiometric compounds and / or one or more non-stoichiometric compounds. Furthermore, “a” and “b” (if any) may be integers or non-integers, “i” and “j” (if any) may also be integers or non-integers, and “m” and “n” (if any) may also be integers or non-integers.

[0143] The term "stoichiometric compound" used here means and encompasses a compound consisting of an element that cannot be represented by a ratio of a clearly defined natural number and does not violate the law of constant proportions. The content of each element in the first passivation layer 111, the second passivation layer 121, and the intermediate passivation layer 131 can be determined by experiments and measurements using an energy-dispersive X-ray spectrometer (EDS), electron energy loss spectroscopy (EELS), or secondary ion mass spectrometry (SIMS). For example, a specific line range or area range can be selected for testing using a measuring device.

[0144] Based on the above, the first passivation layer 111 is designed to contain a silicon oxide material, and the segmentation surface 110a is chemically passivated by the silicon oxide material. The second passivation layer 121 is designed to contain a metal oxide material, and the metal in the metal oxide material comprises at least one of the following: Al, Ti, Zn, Zr, Hf, Mo, W, and Ni. Due to the metal element in the second passivation layer 121, the second passivation layer 121 exhibits high-density solid charges, which can generate a large electric field, thereby achieving effective field-effect passivation at the segmentation surface 110a.In this way, the first passivation layer 111 and the second passivation layer 121 work together to improve the efficiency of the photoelectric conversion of the segmented solar cell 110, thereby improving the efficiency of the photoelectric conversion of the solar cell 100.

[0145] Another embodiment of the present disclosure further provides a tandem solar cell. The tandem solar cell comprises the solar cell provided in the preceding embodiments. The tandem solar cell provided in another embodiment of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that those parts which are the same as or correspond to those in the preceding embodiments are not described again here.

[0146] Fig. Figure 14 is a structural partial sectional view of a tandem solar cell according to another embodiment of the present disclosure.

[0147] With reference to Fig. 1 and Fig. 14 A tandem solar cell 103 comprises a lower solar cell 113, wherein the lower solar cell 113 is the solar cell provided in the above embodiments, wherein the segmented solar cell 110 has a front surface 110c and a rear surface 110d opposite each other along a second direction Y, wherein the segmentation surface 110a connects the front surface 110a and the rear surface 110d along the second direction Y, wherein the second direction Y is a thickness direction of the segmented solar cell 110, and the second direction Y intersects the first direction X; and an upper solar cell 123, wherein the upper solar cell 123 is located on the front surface 110c of the lower solar cell 113.

[0148] In some cases, see Fig. 6. The segmented solar cell 110 can further comprise a base 120, wherein the base has a first principal surface 120a and a second principal surface 120b, which are opposite to each other along the second direction Y; a first principal passivation film 130, which is located on the first principal surface 120a; and a first electrode 122. The first electrode 122 extends through the first principal passivation film 130 and is in electrical contact with the base 120. In other words, the upper solar cell is located on a side of the first principal passivation film 130 facing away from the base 120, and the upper solar cell covers an area of ​​the first principal passivation film 130 and an area of ​​the first electrode 122.

[0149] For some embodiments, see Fig. 14, the upper solar cell 123 can have a first transport layer, a perovskite base, a second transport layer, a transparent conductive layer, and an antireflection layer, which are stacked. The first transport layer faces directly towards the lower solar cell 113.

[0150] In some embodiments, the first transport layer can be one consisting of an electron transport layer and a hole transport layer, and the second transport layer can be the other consisting of an electron transport layer and a hole transport layer.

[0151] In some embodiments, the tandem solar cell 103 comprises, but is not limited to, a crystalline silicon solar cell mounted on a perovskite solar cell, a crystalline silicon solar cell mounted on a copper indium gallium selenide solar cell, a crystalline silicon solar cell mounted on a thin-film solar cell, or a crystalline silicon solar cell mounted on a III-V group solar cell.

[0152] Yet another embodiment of the present disclosure further provides a photovoltaic module. The photovoltaic module comprises several interconnected solar cells according to any of the preceding embodiments or several interconnected tandem solar cells according to the embodiments above. The photovoltaic module is configured to convert received light energy into electrical energy. Fig. Figure 15 is a schematic, partially perspective view of a photovoltaic module according to yet another embodiment of the present disclosure. Fig. 16 is a structural sectional view along a section direction MMI in Fig. 15. It should be noted that for parts that are identical or equivalent to the preceding embodiments, reference is made to the corresponding descriptions of the above embodiments, which are not described in detail below.

[0153] With reference to Fig. 15 and Fig. 16 The photovoltaic module has at least one solar cell string formed by connecting several solar cells 40 according to one of the above embodiments or by connecting several tandem solar cells 103 (see Fig. 14) is formed according to one of the above embodiments; at least one packing adhesive film 41; which is arranged to cover an area of ​​the at least one solar cell string; and a cover plate 42, which is arranged to cover a side of the packing adhesive film 41 facing away from the at least one solar cell string.

[0154] It should be noted that the solar cells 40 are electrically connected to form multiple solar cell strings, and these multiple solar cell strings are electrically connected in series and / or parallel. The solar cell 40 comprises multiple segmented solar cells 110, and the segmented solar cells 110 are formed by segmenting the original solar cell 100. In this way, a power loss of the photovoltaic module can be mitigated by reducing the current in the segmented cell 110, thus improving the efficiency of the photoelectric conversion of the photovoltaic module.

[0155] For some embodiments, see Fig. 16, the multiple solar cell strings can be electrically connected by conductive strips 402. Fig. Figure 16 shows only one positional relationship between one type of solar cell. That is, the solar cell has electrodes of the same polarity arranged in the same direction, or the electrodes of each solar cell that have a positive polarity are arranged facing the same side, so that the conductive strip connects opposite sides of any two adjacent solar cells. In some embodiments, the solar cells can be arranged with the electrodes of opposite polarity facing the same side alternately. That is, the electrodes of several adjacent solar cells are arranged in the sequence of a first polarity, a second polarity, and a first polarity. Then the conductive strip connects two adjacent solar cells on the same side.

[0156] In some designs, there is no gap between the solar cells. That is, the solar cells overlap each other.

[0157] In some embodiments, the packing adhesive film 41 comprises a first packing layer and a second packing layer. The first packing layer covers one of the front and back surfaces of the solar cell 40, and the second packing layer covers the other of the front and back surfaces of the solar cell 40. Specifically, at least one of the first and second packing layers can be an organic packing adhesive film, such as a polyvinyl butyral adhesive film (a PVB adhesive film), an ethylene vinyl acetate copolymer adhesive film (an EVA adhesive film), a polyethylene octene coelastomer adhesive film (a POE adhesive film), or a polyethylene terephthalate adhesive film (a PET adhesive film).

[0158] In some cases, a separation line exists between the first and second packing layers before lamination, and after lamination the photovoltaic module is formed, and there is no difference between the first and second packing layers. That is, the first and second packing layers have formed a single, continuous packing adhesive film 41.

[0159] In some embodiments, the cover plate 42 can be a cover plate with a light-transmitting function, such as a glass or plastic cover plate. Specifically, a surface of the cover plate 42 facing the packing adhesive film 41 can have an uneven surface, thereby increasing the utilization rate of the incident light. The cover plate 42 comprises a first cover plate and a second cover plate. The first cover plate faces the first packing layer, and the second cover plate faces the second packing layer.

[0160] For some embodiments, see Fig.In the photovoltaic module, the solar cells 40 are arranged along the first direction X in the solar cell string, and the busbars of two adjacent solar cells 40 in the solar cell string are offset in the third direction Z. This allows for testing different potentials of the photovoltaic module, thereby improving the reliability of the test results.

[0161] A person skilled in the art can understand that the above implementations represent specific embodiments of the present disclosure and that, in practical applications, various changes to the form and details can be made without departing from the spirit and scope of the embodiments of the present disclosure. Any person skilled in the art can make various modifications or adaptations without departing from the spirit and scope of the embodiments of the present disclosure. Therefore, the scope of protection of the present disclosure shall be limited to the scope defined by the claims.

[0162] Embodiments of the present disclosure relate to the field of photovoltaics and provide a solar cell, a tandem solar cell, and a photovoltaic module. The solar cell is formed by a segmented solar cell with a segmentation surface formed in a segmentation process and has a passivation stack formed at least on the segmentation surface. The passivation stack has, along a first direction perpendicular to the segmentation surface, at least a first passivation layer and a second passivation layer formed above the first passivation layer, and the first passivation layer contains a silicon oxide material and the second passivation layer contains a metal oxide material, wherein the metal in the metal oxide material comprises at least one element of aluminum, titanium, zinc, zirconium, hafnium, molybdenum, tungsten, or nickel.The embodiments of the present disclosure are at least conducive to improving the efficiency of the photoelectric conversion of solar cells having segmented solar cells.

Claims

[1] Solar cell formed by a segmented solar cell, comprising a passivation stack (101) formed on at least one segmentation surface (110a) of the segmented solar cell (110); wherein the passivation stack (101) has at least a first passivation layer (111) and a second passivation layer (121) formed above the first passivation layer (111) along a first direction (X) perpendicular to the segmentation surface (110a); wherein the first passivation layer (111) contains a silicon oxide material, wherein the second passivation layer (121) contains a metal oxide material, and wherein a metal in the metal oxide material comprises at least one element of aluminium, titanium, zinc, zirconium, hafnium, molybdenum, tungsten or nickel. [2] Solar cell according to claim 1, wherein the segmented solar cell (110) has a non-segmented side surface, and the segmented solar cell (110) a base (120) wherein the base (120) has a first principal surface (120a) and a second principal surface (120b) which are opposite to each other along a second direction (Y), wherein the second direction (Y) is a thickness direction of the segmented solar cell (110); a first main passivation film (130) formed on the first main surface (120a); a second main passivation film (140) formed on the second main surface (120b); and a side passivation film (150) formed on the non-segmented side surface, wherein the side passivation film (150) and the first main passivation film (130) contain the same material, or the side passivation film (150) and the second main passivation film (140) contain the same material. [3] Solar cell according to claim 2, wherein the passivation stack (101) is further formed on a part of a surface of the first main passivation film (130) facing away from the first main surface (120a); and / or the passivation stack (101) is further formed on a part of a surface of the second main passivation film (140) facing away from the second main surface (120b). [4] Solar cell according to claim 3, wherein the area ratio of the portion of the area of ​​the first main passivation film (130) provided with the passivation stack (101) to the area of ​​the first main passivation film (140) is less than or equal to 5%; and / or the area ratio of the portion of the area of ​​the second main passivation film (140) provided with the passivation stack (101) to the area of ​​the second main passivation film (140) is less than or equal to 5%. [5] Solar cell according to one of claims 1 to 4, wherein the passivation stack (101) further comprises an intermediate passivation layer (150) formed between the first passivation layer (130) and the second passivation layer (121), wherein both the intermediate passivation layer (131) and the first passivation layer (111) contain silicon and the intermediate passivation layer (131) and the second passivation layer (121) contain the same metal. [6] Solar cell according to claim 5, wherein the intermediate passivation layer (131) and the first passivation layer (111) have first surfaces (e) that are in contact with each other, and the intermediate passivation layer (131) and the second passivation layer (121) have second surfaces (f) that are in contact with each other; wherein the silicon content on the first surface (e) is higher than the silicon content on the second surface (f), and the metal content on the first surface (e) is lower than the metal content on the second surface (f). [7] Solar cell according to claim 6, wherein the silicon content in the intermediate passivation layer (131) exhibits a substantially decreasing profile along a direction leading from the first passivation layer (111) to the second passivation layer (121), while the metal content in the intermediate passivation layer (131) exhibits a substantially increasing profile. [8] Solar cell according to claim 5, wherein a material of the intermediate passivation layer (131) contains a silicon oxide and an oxide of the metal, wherein the silicon content in the intermediate passivation layer (131) is in a range of 2% to 60%, the metal content is in a range of 2% to 50%, and the oxygen content is in a range of 38% to 50%. [9] tandem solar cell (103), comprising a lower solar cell (113), wherein the lower solar cell (113) is the solar cell according to any one of claims 1 to 8, wherein the segmented solar cell (110) has a front surface (110c) and a rear surface (110d) which are opposite to each other along a second direction (Y), wherein the segmentation surface (110a) connects the front surface (110c) and the rear surface (110d) along the second direction (Y), wherein the second direction (Y) is a thickness direction of the segmented solar cell (110); and an upper solar cell (123) located on the front surface (110c) of the lower solar cell (113). [10] Photovoltaic module comprising at least one solar cell string formed by connecting several solar cells (40) according to one of claims 1 to 8 or by connecting several tandem solar cells according to claim 9; at least one packaging adhesive film (41) arranged to cover an area of ​​the at least one solar cell string; and at least one cover plate (42) which is arranged to cover an area of ​​the at least one packing adhesive film (41) which faces away from the at least one solar cell string.

Images