X-ray measurement system and combined semiconductor inspection system

Abstract

X-ray measuring system (1), comprising: - a multi-axis sample carrier (10, 20, 30) used to carry a measurement sample (SP); - an X-ray generator (12, 220, 240, 340) with - an electron beam generator (120) which serves to generate an incident electron beam (EB); - an electromagnetic lens set (122) which serves to focus the incident electron beam (EB) and simultaneously control the focusing position of the incident electron beam (EB); - an X-ray target (124, 124', 124'', 124''') arranged on a target actuation device (123) which receives the focused incident electron beam (EB) at an angle of incidence (θi) and generates a measurement X-ray beam (Lx1, Lx2), wherein the X-ray target (124, 124', 124'', 124''') comprises a heat dissipation substrate (1240, 1240', 1240'', 1240''') and several excitation targets (1242, 1242', 1242'', 1242'''), wherein the excitation targets (1242, 1242', 1242'', 1242''') are distributed in the heat dissipation substrate (1240, 1240', 1240'', 1240'''') are embedded; and - a vacuum chamber (126) which serves to accommodate the electron beam generator (120), the electromagnetic lens set (122), the target actuation device (123) and the X-ray target (124, 124', 124'', 124''') and is equipped with a window for the passage of the measuring X-ray beam (Lx1, Lx2); - an X-ray optic (14, 222, 242, 342) which serves to direct the measuring X-ray beam (Lx1, Lx2) onto the measuring sample (SP); - an X-ray detector (16, 224, 244, 344) which serves to receive a measured X-ray signal (Lx', Lx1', Lx2') generated by irradiating the measurement sample (SP) with the measuring X-ray beam (Lx1, Lx2) and to generate X-ray spectral information associated with the measured X-ray signal (Lx', Lx1', Lx2'); and - a processing device (18, 26, 36) configured to output a measurement result of the measurement sample (SP) based on the X-ray spectral information.

Description

[0001] The present invention relates to a measuring system and an inspection system, in particular an X-ray measuring system and a combined semiconductor inspection system.

[0002] Since the development of conventional X-ray tubes, X-ray generation has required a basic arrangement consisting of a cathode and an anode target, whereby the cathode generates a high-voltage electron beam and bombards the anode with this high-voltage electron beam. Depending on the elemental composition of the anode, its internal atoms are excited by energy and migrate from a high energy level to a low energy level, releasing energy in the form of X-rays.

[0003] The biggest disadvantage of conventional X-ray tubes is the design of their solid anodes. This is because solid anodes are usually formed by thin-film deposition and, under prolonged bombardment with a high-voltage electron beam, tend to cause local to widespread damage to the anode target, which most noticeably affects the generated X-ray flux.

[0004] To overcome this challenge, rotating anode targets and liquid-metal jet targets have been developed as part of current technology, but these still have their respective drawbacks. With rotating anode targets, changing the position at which the electron beam bombards the target extends its lifetime and increases the X-ray flux. However, changing the target's position requires recalibrating the optical path for the X-rays, necessitating a fairly complex mechanism. Liquid-metal jet targets utilize the flow properties of the liquid metal to increase the X-ray flux. The disadvantage, however, is the high consumption of consumables and the associated costs, as the liquid metal must be regularly replaced or replenished.

[0005] Starting from the disadvantages of the prior art, the present invention aims to offer an X-ray measuring system and a combined semiconductor inspection system with which the problem that the X-ray flux is impaired due to damage to the anode by the electron beam can be effectively solved.

[0006] To solve this problem, the present invention proposes an X-ray measuring system comprising a multi-axis sample carrier, an X-ray generator, X-ray optics, an X-ray detector, and a processing device. The multi-axis sample carrier is used to hold a measurement sample. The X-ray generator comprises an electron beam generator, an electromagnetic lens assembly, an X-ray target, and a vacuum chamber. The electron beam generator serves to generate an incident electron beam. The electromagnetic lens assembly serves to focus the incident electron beam. The X-ray target is arranged on a target actuation device, receives the focused incident electron beam at an angle of incidence, and generates a measurement X-ray beam.The X-ray target comprises a heat dissipation substrate and several excitation targets, which are distributed and embedded within the heat dissipation substrate. The vacuum chamber houses the electron beam generator, the electromagnetic lens assembly, the target actuation device, and the X-ray target, and is equipped with a window for the passage of the measuring X-ray beam. The X-ray optics direct the measuring X-ray beam onto the sample. The X-ray detector receives the X-ray signal generated by irradiating the sample with the measuring X-ray beam and generates X-ray spectral information corresponding to the signal. The processing device is configured to output a measurement result for the sample based on this X-ray spectral information.

[0007] To solve this problem, the present invention further proposes a combined semiconductor inspection system comprising a multi-axis sample carrier, at least two X-ray measurement subsystems, and a processing device. The multi-axis sample carrier is used to hold a measurement sample. The at least two X-ray measurement subsystems each comprise an X-ray generator, X-ray optics, and an X-ray detector. The X-ray generator comprises an electron beam generator, an electromagnetic lens assembly, an X-ray target, and a vacuum chamber. The electron beam generator serves to generate an incident electron beam. The electromagnetic lens assembly serves to focus the incident electron beam and simultaneously control the focusing position of the incident electron beam.The X-ray target is arranged on a target actuation device, receives the focused incident electron beam at an angle of incidence, and generates a measurement X-ray beam. The X-ray target comprises a heat dissipation substrate and several excitation targets, which are embedded within the heat dissipation substrate. The vacuum chamber houses the electron beam generator, the electromagnetic lens assembly, the target actuation device, and the X-ray target, and is equipped with a window for the passage of the measurement X-ray beam. The X-ray optics direct the measurement X-ray beam onto the sample. The X-ray detector receives the X-ray signal to be measured, which is generated by irradiating the sample with the measurement X-ray beam, and generates X-ray spectral information corresponding to the measurement signal.The X-ray optics serve to direct the measuring X-ray beam onto the sample. The X-ray detector serves to receive the X-ray signal to be measured, which is generated by irradiating the sample with the measuring X-ray beam, and to generate X-ray spectral information associated with the X-ray signal. The processing device is configured to output a measurement result for the sample based on the X-ray spectral information generated by the at least two X-ray measurement subsystems.

[0008] To solve this problem, the present invention further proposes a combined semiconductor inspection system comprising a multi-axis sample carrier, an optical measurement subsystem, an X-ray measurement subsystem, and a processing device. The multi-axis sample carrier is used to hold a sample. The optical measurement subsystem comprises a light source generator, an incident-side optic, a receiving-side optic, and an optical receiver. The light source generator serves to generate a measurement light beam with a wavelength in an optical wavelength range that includes at least the UV wavelength range up to the near-infrared wavelength range. The incident-side optic serves to direct the measurement light beam onto the sample. The receiving-side optic serves to receive an optical signal to be measured, which is generated by irradiating the sample with the measurement light beam.The optical receiver serves to receive the optical signal to be measured, guided by the receiving optics, and to generate optical spectral information associated with the optical signal to be measured. The X-ray measurement subsystem comprises an X-ray generator, X-ray optics, and an X-ray detector. The X-ray generator includes an electron beam generator, an electromagnetic lens set, an X-ray target, and a vacuum chamber. The electron beam generator serves to generate an incident electron beam. The electromagnetic lens set serves to focus the incident electron beam and simultaneously control the focusing position of the incident electron beam. The X-ray target is arranged on a target actuation device, receives the focused incident electron beam at an angle of incidence, and generates a measurement X-ray beam.The X-ray target comprises a heat dissipation substrate and several excitation targets, which are distributed and embedded within the heat dissipation substrate. The vacuum chamber houses the electron beam generator, the electromagnetic lens set, the target actuation device, and the X-ray target, and is equipped with a window for the passage of the measuring X-ray beam. The X-ray optics direct the measuring X-ray beam onto the sample. The X-ray detector receives the X-ray signal to be measured, which is generated by irradiating the sample with the measuring X-ray beam, and generates X-ray spectral information corresponding to the measured X-ray signal. The X-ray optics direct the measuring X-ray beam onto the sample.The X-ray detector serves to receive a measurement signal generated by irradiating the sample with the measuring X-ray beam and to generate X-ray spectral information corresponding to the measurement signal. The processing device is configured to output a measurement result for the sample based on the optical spectral information and the X-ray spectral information.

[0009] For a better understanding of the features and technical content of the present invention, reference is made to the following detailed description and the drawings of the X-ray measuring system and semiconductor inspection system according to the invention, which, however, serve only for illustration and are not intended to limit the present invention. Fig. Figure 1 shows a functional block diagram of an X-ray measuring system of a first embodiment of the present invention. Fig. Figure 2 shows a schematic representation of a system architecture of the X-ray measuring system of the first embodiment of the present invention. Fig. Figure 3 shows a schematic representation of the architecture of an X-ray generator of the first embodiment of the present invention. Fig. Figure 4 shows a first top view of an X-ray target of the first embodiment of the present invention. Fig. Figure 5 shows a first sectional view of the X-ray target of the first embodiment of the present invention along section line II. Fig. Figure 6 shows a second top view of the X-ray target of the first embodiment of the present invention. Fig. Figure 7 shows a second sectional view of the X-ray target of the first embodiment of the present invention along section line II-II. Fig. Figure 8 shows a third top view of the X-ray target of the first embodiment of the present invention. Fig. Figure 9 shows a third sectional view of the X-ray target of the first embodiment of the present invention along section line III-III. Fig. Figure 10 shows a fourth top view of the X-ray target of the first embodiment of the present invention. Fig. Figure 11 shows a fourth sectional view of the X-ray target of the first embodiment of the present invention along section line IV-IV. Fig. Figure 12 shows a functional block diagram of a combined semiconductor inspection system of a second embodiment of the present invention. Fig. Figure 13 shows a schematic representation of a first operating mode of the combined semiconductor inspection system of the second embodiment of the present invention. Fig. Figure 14 shows a schematic representation of a second operating mode of the combined semiconductor inspection system of the second embodiment of the present invention. Fig. Figure 15 shows a schematic representation of a third operating mode of the combined semiconductor inspection system of the second embodiment of the present invention. Fig. Figure 16 shows a functional block diagram of a combined semiconductor inspection system of a third embodiment of the present invention and Fig. Figure 17 shows a top view of a measurement architecture of the combined semiconductor inspection system of the third embodiment of the present invention.

[0010] The following describes, with reference to specific embodiments, the embodiments of an X-ray measuring system and a combined semiconductor inspection system disclosed within the scope of the present invention. Those skilled in the art will recognize that the advantages and technical effects of the present invention can be derived from the disclosures in this description. The present invention can be implemented or applied through other specific embodiments, whereby various modifications or alterations can be made to the details disclosed in this description, depending on requirements and application, without departing from the fundamental ideas of the present invention. Furthermore, it should be noted that the individual components of the present invention are not shown in their actual size, but only schematically.The following embodiments serve to further describe the various configurations of the present invention, although the corresponding disclosures do not constitute a limitation of the scope of protection of the present invention. Furthermore, the term "or" used in this description may, if applicable, encompass any of the items listed or a combination of several such items. [First embodiment]

[0011] Fig. Figure 1 shows a functional block diagram of an X-ray measuring system of a first embodiment of the present invention. Fig. Figure 2 shows a schematic representation of a system architecture of the X-ray measuring system of the first embodiment of the present invention.

[0012] With reference to Fig. 1 to 2 the first embodiment of the present invention provides an X-ray measuring system 1 comprising a multi-axis sample carrier 10, an X-ray generator 12, an X-ray optic 14, an X-ray detector 16 and a processing device 18.

[0013] The multi-axis sample carrier 10 is a multi-axis movable support, which can be, for example, a three-axis tilting platform or a ball-bearing tilting platform, for carrying a measurement sample SP. The multi-axis sample carrier 10 can have a carrier movement mechanism and a carrier rotation mechanism. The carrier movement mechanism can, for example, include stepper motors assigned to three axes to move the measurement sample SP along one or more axes of the X-axis, Y-axis, and Z-axis, whereby the measurement sample SP can be moved precisely into different positions by controlling the stepper motors assigned to the individual axes. In the case of a ball-bearing tilting platform, the carrier rotation mechanism can, for example, be a ball joint connected to the actual platform and can rotate the measurement sample SP about one or more axes of the X-axis, Y-axis, and Z-axis.In detail, the rotation mechanism of the multi-axis sample carrier 10 can include the control of an azimuth angle θ around the Y-axis and an azimuth angle ϕ around the Z-axis, thereby enabling all-round scanning of the measurement sample SP.

[0014] In the embodiments of the present invention, the measurement sample SP can be a wafer, a photomask, a photomask film or a semiconductor element with a multilayer film, such as a metal oxide semiconductor field-effect transistor (MOSFET), a planar MOSFET, a complementary field-effect transistor (CFET), a Fin field-effect transistor (FinFET), a gate all-around field-effect transistor (GAAFET), a high electron mobility transistor (HEMT), a heterojunction field-effect transistor (HFET), a dual-gate MOSFET (DG-MOSFET), a fast recovery epitaxial diode field-effect transistor (FREDFET), etc.

[0015] Fig. Figure 3 shows a schematic representation of the architecture of the X-ray generator of the first embodiment of the present invention. As in Fig. As shown in Figure 3, the X-ray generator 12 comprises an electron beam generator 120, an electromagnetic lens set 122, an X-ray target 124 and a vacuum chamber 126.

[0016] The vacuum chamber 126 has a compartment for the electron beam generator 120, the electromagnetic lens set 122, a target actuation device 123, and the X-ray target 124. The vacuum chamber 126 is equipped with a window 1260 for the passage of a measuring X-ray beam. The vacuum chamber 126 is a chamber capable of withstanding a high vacuum. In addition to providing a closed space isolated from the outside world, it is also equipped with a vacuum pump 1262 (which may be present in one or more instances), so that the vacuum chamber 126 can be maintained at a vacuum level of 10 -7Torr or more can be maintained, creating an environment suitable for the presence of an electron beam. An X-ray exit window 3 serves to allow X-rays to escape from the chamber without being absorbed by the vacuum chamber. The electron beam generator 120, for example, may include one or more cathode electron guns and is used to generate an incident electron beam EB that strikes the X-ray target 124 to excite X-ray radiation. The electromagnetic lens set 122, which may include one or more electromagnetic lenses, serves to focus the incident electron beam EB onto the X-ray target 124 and to control the shape and focusing position of the incident electron beam EB as it strikes the X-ray target 124.

[0017] Alternatively, the X-ray target 124 can be arranged on the target actuation device 123. The X-ray target 124 receives the focused incident electron beam EB at a specific angle of incidence θi and generates a measurement X-ray beam Lx. The target actuation device 123 is a device similar to the multi-axis sample carrier 10, which can rotate the X-ray target 124 about one or more specific reference axes, such as the X-axis, Y-axis, and Z-axis. The X-ray target 124 can be made of copper, molybdenum, cobalt, or a high-entropy alloy material (HEAMs), wherein the high-entropy alloy material can, for example, comprise one or more of the following materials: CuZnMnAl, AlCrTiTaZr, AlCoCrFeNiTi, AlCoCrFeNi, AlFeCrNiMo.By selecting different target materials, it is possible to generate measurement X-rays Lx with different energies or different wavelengths (or frequencies).

[0018] Fig. Figure 4 shows a first top view of the X-ray target of the first embodiment of the present invention. Fig. Figure 5 shows a first sectional view of the X-ray target of the first embodiment of the present invention along section line II. As in Fig. 4 and Fig. As shown in Figure 5, the X-ray target 124 serves as the anode in the present embodiment and comprises a heat dissipation substrate 1240 and several excitation targets 1242, wherein the excitation targets 1242 are distributed and embedded in the heat dissipation substrate 1240. The heat dissipation substrate 1240 can, for example, be a plate, which in plan view can be, for instance, a circular plate, while the excitation targets 1242 are several rings arranged sequentially from the inside out around the center C1 of the plate.

[0019] More precisely, the heat dissipation substrate 1240 can, for example, be a plate with several grooves, wherein the excitation targets 1242 can be arranged in the grooves in the form of concentric circles, i.e., embedded in the heat dissipation substrate 1240. As can be seen from the sectional view ( Fig. 5) As can be seen, each ring formed by an excitation target 1242 has a rectangular cross-section and a light-receiving surface Sr that does not touch the plate (i.e., the heat dissipation substrate 1240). In this way, compared to the design of existing X-ray targets, the contact area between the excitation targets 1242 and the heat dissipation substrate 1240 can be increased, so that the X-ray target 1240 can withstand a higher flux of incident electron beams EB, thereby increasing the intensity of the generated incident X-ray radiation Lx. In some embodiments, the heat dissipation substrate 1240 can contain a material with high thermal conductivity, such as diamond, graphite, graphene, silicon carbide, boron nitride, and so on.

[0020] On the other hand, the X-ray target 124 can be excited in various ways with the incident electron beam EB. As in Fig. As shown in Figure 5, the X-ray target 124 is tilted, for example, by adjusting the angle of incidence θi with respect to the incident electron beam EB, so that at the same time the repeated absorption of X-rays is reduced, the heat dissipation effect is achieved, and the magnitude of the X-ray radiation can be controlled to the ideal size while simultaneously achieving the line focus principle.

[0021] Alternatively, as in Fig. Figure 4 shows that when the X-ray target 124 receives the focused incident electron beam EB and generates the measurement X-ray beam Lx, the target actuation device 123 rotates the X-ray target 124 such that the point of incidence at which the incident electron beam EB strikes the X-ray target 124 varies over time. For example, the X-ray target 124 can be rotated clockwise or counterclockwise around the center point C1 in the direction of rotation Dr by the target actuation device 123, while the incident electron beam EB can strike the same point to generate a stable measurement X-ray beam Lx, allowing heat to be dissipated from the excitation targets 1242 and the heat dissipation substrate 1240, which are not irradiated by the incident electron beam EB.

[0022] Furthermore, each ring formed by an excitation target 1242 has a width W1 in the radial direction of the circular plate, which can be the same or different. If the widths W1 are the same, there is the advantage of a simple manufacturing process. On the other hand, to average the lifetime of the excitation targets, the width W1 of each of the rings can be designed based on the electron beam morphology at the time of impact of the incident electron beam EB, so that the inner and outer rings can have the same irradiated area when irradiated with the incident electron beam EB, without the situation arising in which the inner and outer rings have a shorter lifetime and the entire X-ray target 124 needs to be replaced.

[0023] Fig. Figure 6 shows a second top view of the X-ray target of the first embodiment of the present invention. Fig. Figure 7 shows a second sectional view of the X-ray target of the first embodiment of the present invention along section line II-II. As in Fig. 6 and Fig. As shown in Figure 7, the first embodiment of the present invention provides a further X-ray target 124'. Similar to the illustrations in Figure 7, the first embodiment of the present invention provides a further X-ray target 124'. Fig. 4 and Fig. The excitation targets 1242' are distributed and embedded in the heat dissipation substrate 1240'. The heat dissipation substrate 1240' can, for example, be a circular plate, while the excitation targets 1242' are several rings arranged sequentially from the inside out around the center C2 of the plate. In contrast to the Fig. 4, Fig. 5 Each of the rings has a triangular cross-section, which may, for example, be a right-angled triangle, and has a chamfered edge corresponding to a light-receiving surface Sr, which is inclined at a predetermined angle θ1 with respect to a first surface S1 of the plate, wherein the predetermined angles θ1 of the rings are different from one another. For example, the predetermined angles θ1 of the rings gradually increase outwards from the center C2 of the plate. In some embodiments, the range of variation of the predetermined angles θ1 may be from 30 degrees to 45 degrees, but the present invention is not limited thereto.

[0024] Specifically, the specified angle θ1 is an inclination angle generated by the morphology of the excitation target 1242'. This angle can reduce the intensity attenuation of the measurement X-rays Lx generated by the multiple excitation targets 1242' at a specific angle of incidence θi, which in turn can result in the measurement X-rays Lx having a higher intensity at a given angle. Since the light-receiving surface Sr of each ring formed by an excitation target 1242' has a different angle with respect to the first surface S1, the measurement X-rays Lx with maximum intensity that can be generated by each excitation target 1242' correspond to different angles. By design, it is possible for the stronger measurement X-rays Lx generated by each excitation target 1242' to converge at the same point.Furthermore, in addition to the property of gradually changing from the center outwards, the given angle θ1 must have an angular range that is greater than 0 degrees.

[0025] This allows the contact area between the excitation targets 1242' and the heat dissipation substrate 1240' to be increased, thus enhancing the heat dissipation effect, since the multiple excitation targets 1242' are distributed and embedded in the heat dissipation substrate 1240'. The special angular design enables the stronger measurement X-ray radiations Lx to converge on the same point, producing an effect similar to the focusing of light. Similar to in Fig. 4 can the X-ray target 124' from Fig. 6 and Fig. 7 can also be rotated by the target actuation device 123, so that the incident position at which the incident electron beam EB hits the X-ray target 124' varies over time, which further improves the heat dissipation effect.

[0026] Fig. Figure 8 shows a third top view of the X-ray target of the first embodiment of the present invention. Fig. Figure 9 shows a third sectional view of the X-ray target of the first embodiment of the present invention along section line III-III. As in Fig. 8 and Fig. As shown in Figure 9, the first embodiment of the present invention provides an even further X-ray target 124". Similar to the Fig. 4 and Fig. The excitation targets 1242" are distributed and embedded in the heat dissipation substrate 1240" and consist of several rings arranged sequentially around the center of the plate, from the inside out. In plan view, the heat dissipation substrate 1240" can be, for example, a circular plate. However, as can be seen from the side view, the circular plate, unlike the Fig. 4 and Fig. 5 essentially around a bowl-shaped plate, wherein each ring formed by an excitation target 1242" is arranged around a lower center C3 of the bowl-shaped plate and has a light-receiving surface Sr" which does not touch the bowl-shaped plate.

[0027] Since the heat dissipation substrate 1240'' is a bowl-shaped plate, the light-receiving surfaces Sr'' of the excitation targets 1242'' can vary with the morphology of the heat dissipation substrate 1240'', so that different light-receiving surfaces Sr'' exhibit different angles with respect to the incident electron beam EB, which corresponds to the in Fig. 6 and Fig. The angle variation design mentioned in section 7 is similar. Similarly, the angle of each of the light-receiving surfaces Sr'' with respect to the incident electron beam EB can be controlled by the arrangement of the excitation targets 1242'', so that the measurement X-ray radiation Lx has a higher intensity in a particular direction.

[0028] Fig. Figure 10 shows a fourth top view of the X-ray target of the first embodiment of the present invention. Fig. Figure 11 shows a fourth sectional view of the X-ray target of the first embodiment of the present invention along section line IV-IV. Here, the heat dissipation substrate 1240''' is designed as a plate (e.g., as a rectangular plate), while the excitation targets 1242''' are several blocks arranged in an array on a first surface S1 of the plate, each of the blocks having a light-receiving surface Sr''' that does not touch the plate.

[0029] In this example, the area of ​​the electron beam cross-section created by the incident electron beam striking the X-ray target 124''' is smaller than the area of ​​the first surface of the plate. For example, the size of the incident electron beam EB striking the X-ray target 124''' can be less than 50 micrometers by 50 micrometers, which in turn produces a smaller X-ray spot size. By very finely dividing the excitation targets 1242''' and distributing them in the heat dissipation substrate 1240''', the contact area between the excitation targets 1242''' and the heat dissipation substrate 1240''' can be effectively increased.

[0030] As can be seen from Fig. 10 and Fig. As shown in Figure 11, the blocks formed by the excitation targets 1242''' are each hexahedral (e.g., cubic) and separated from each other in plan view by a vertical distance Sv and a horizontal distance Sh, with each block having a width Wv and a width Wh in the vertical and horizontal directions, respectively. In a particular embodiment, each block is a rectangle with the same length and width in plan view, i.e., Wv = Wh. The vertical distance Sv and the horizontal distance Sh can, for example, be half the length and width of the target, i.e., Sv = 1 / 2 Wv and Sh = 1 / 2 Wh.Under this condition, the total contact area between all excitation targets 1242''' and the heat dissipation substrate 1240''' can be more than doubled compared to the case where the excitation targets 1242''' are not distributed, thereby effectively improving the heat dissipation effect so that the X-ray target 124''' can withstand a higher flux of the incident electron beam EB. Similarly, while simultaneously achieving the line focus principle, the repeated absorption of X-rays can be reduced, the heat dissipation effect achieved, and the magnitude of the X-ray radiation controlled to the ideal level by tilting the X-ray target 124 by adjusting the angle of incidence θi with respect to the incident electron beam EB.

[0031] It is emphasized that the diameter of the incident electron beam EB should preferably be larger than the side lengths (i.e., the width Wv and the width Wh) of each block formed by an excitation target 1242''' and may, for example, be 10, 20, 30, or 50 times the width Wv and the width Wh. On the other hand, the width Wv and the width Wh may each be greater than or equal to the vertical spacing Sv and the horizontal spacing Sh. The ratio of vertical spacing Sv / horizontal spacing Sh to width Wv / width Wh is, for example, 1:1, 1:0.5, 1:0.2, or 1:0.1.

[0032] As in Fig. 1 and Fig. As shown in Figure 2, the X-ray optics 14 are used to direct the measuring X-ray beam Lx onto the sample. The X-ray optics 14 can comprise one or more X-ray optical elements. For example, the X-ray optics 14 can include a set of X-ray mirrors, an X-ray slit, and an X-ray collimator, arranged sequentially between the X-ray generator 12 and the sample SP. The set of X-ray mirrors can have a multi-layered film structure to focus the measuring X-ray beam Lx horizontally and vertically. The X-ray slit can be used to control both the luminous flux and the vertical divergence angle of the measuring X-ray beam Lx incident on the sample SP. The measuring X-ray beam Lx is primarily used in X-ray analysis and can, for example, be a beam with a wavelength range greater than 0.1 nm and may include a hard X-ray, a soft X-ray, or a gamma ray.

[0033] When a measuring X-ray beam Lx is directed onto the sample SP, a measurable X-ray signal Lx' is generated by reflection, diffraction, scattering, or transmission, depending on the angle of incidence. The X-ray detector 16 can be used to receive the measurable X-ray signal Lx' generated by reflection, diffraction, scattering, or transmission, and to generate corresponding X-ray spectral information by being placed at a suitable position. The X-ray detector 16 can be a detector with high spatial resolution in more than one dimension and can receive measurable X-ray signals Lx' with an energy greater than 1 keV.

[0034] During the measurement, the processing device 18 can control the movement and / or rotation of the multi-axis sample carrier 10 so that the X-ray detector 16 receives several X-ray signals Lx' to be measured, generated at several X-ray measurement angles, and generates several X-ray spectral information associated with these X-ray signals Lx' to be measured.

[0035] Furthermore, the X-ray generator 12 and the X-ray detector 16 are arranged on an X-ray rotation mechanism 11, which can include one or more robot arms connected to the X-ray generator 12 and the X-ray detector 16. Each of these arms can have degrees of freedom in multiple directions, allowing the X-ray generator 12 and the X-ray detector 16 to rotate simultaneously or separately around the measurement sample SP. In this architecture, the processing device 18 can simultaneously control the rotation of the X-ray rotation mechanism 11 while controlling the movement and / or rotation of the multi-axis sample carrier 10. This enables the X-ray generator 12 to emit the measurement X-ray beam Lx in multiple directions, and the X-ray detector 16 to receive the multiple X-ray signals Lx' generated from multiple X-ray measurement angles and to generate multiple corresponding X-ray spectral information signals.

[0036] The processing device 18, which may be, for example, a computer system with a processor and memory, can be configured to execute a stored instruction set or program code to control controllable elements in the multi-axis sample carrier 10 and the X-ray measurement subsystem 1. Furthermore, the processing device 18 can be configured to output the X-ray spectral information as a measurement result of the sample SP or to further modify the X-ray spectral information to obtain the structural parameters of the sample SP as a measurement result. These structural parameters include one or more of the following: thickness, roughness, density, critical dimension, line edge roughness, refractive index, and extinction coefficient.

[0037] For example, the processing device 18 can adjust the X-ray spectral information. The X-ray spectral information can include, for example, reflection spectra obtained by striking the measurement X-ray beam Lx onto the measurement sample SP at several different angles of incidence. The adjustment results can include the structural parameters of the measurement sample SP (in the form of, for example, a MOSFET, a planar MOSFET, a CFET, a FinFET, a HEMT, an HFET, a DG-MOSFET, a FREDFET, or another semiconductor device).

[0038] Specifically, the processing device 18 can adapt the X-ray spectral information to reconstruct important structural parameters of the measurement sample SP. The X-ray spectral information can be generated by various interaction mechanisms between the measurement X-ray beam Lx and the measurement sample SP. For example, the X-ray spectral information can include X-ray reflection spectral information, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information. X-ray reflection spectral information can be obtained by controlling the azimuth angles θ and ϕ such that the X-ray detector 16 detects the X-ray signals Lx' generated by reflection and to be measured.Similarly, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information can be obtained by the X-ray detector 16 acquiring the X-ray signals Lx' to be measured, generated by scattering, diffraction, or fluorescence excitation, respectively. Accordingly, the processing device 18 can perform various X-ray analyses of the X-ray reflectivity, X-ray scattering, X-ray diffraction, and X-ray fluorescence spectral information, including X-ray reflectivity (XRR), X-ray diffraction (XRD), small-angle X-ray scattering (SAX), and X-ray fluorescence (XRF) analysis, within a matching analysis process, in order to reconstruct the important structural parameters of the measurement sample SP.

[0039] In the context of, for example, an XRR analysis, when the measuring X-ray beam Lx strikes the sample SP and a spectral signal within a certain angular range is received by the X-ray detector, an XRR spectrum is obtained. The XRR analysis can then determine the structural parameters of the sample SP. If the sample SP comprises, for example, a multilayer structure, the XRR analysis can determine the density, thickness, roughness, etc., of each layer based on the acquired X-ray reflection spectral information. Conversely, if the sample SP contains minute components, the XRR analysis can determine, among other things, the orientation and dimensions of these minute components based on the X-ray reflection spectrum. However, the present invention is not limited to this.The X-ray analysis described above can also be used to analyze the structural parameters of various types of SP samples, such as MOSFETs, planar MOSFETs, CFETs, FinFETs, GAAFETs, HEMTs, HFETs, DG-MOSFETs, FREDFETs and the like. [Second embodiment]

[0040] Fig. Figure 12 shows a functional block diagram of a combined semiconductor inspection system of a second embodiment of the present invention. Fig. Figure 13 shows a schematic representation of a first operating mode of the combined semiconductor inspection system of the second embodiment of the present invention. As in Fig. As shown in Figure 12, the second embodiment of the present invention additionally provides a combined semiconductor inspection system 2 comprising a multi-axis sample carrier 20, X-ray measurement subsystems 22, 24, and a processing device 26. In the present embodiment, elements that are identical or similar to those of the first embodiment are designated with similar reference numerals and are not described again.

[0041] The multi-axis sample carrier 20 is similar to the multi-axis sample carrier 10 of the first embodiment. The X-ray measurement subsystems 22, 24 are essentially similar to the X-ray measurement subsystem 1. The X-ray measurement subsystem 22 comprises an X-ray generator 220, an X-ray optic 222, and an X-ray detector 224. The X-ray measurement subsystem 24 comprises an X-ray generator 240, an X-ray optic 242, and an X-ray detector 244. The X-ray generators 220, 240 each serve to generate a measurement X-ray beam Lx1 and Lx2, respectively, which can be, for example, a beam with a wavelength range greater than 0.1 nm and may include a hard X-ray, a soft X-ray, or a gamma beam.

[0042] It should be noted that the X-ray generator 220 and the X-ray generator 240 are configured identically to the X-ray generator 12 of the first embodiment and also use an X-ray target as the anode, in which several excitation targets are distributed and embedded in a heat dissipation substrate to improve heat dissipation efficiency. Details of the X-ray generator 220 and the X-ray generator 240 can be found in the first embodiment and are not repeated here.

[0043] When the measuring X-ray beam Lx1 or Lx2 is directed onto a measuring sample SP, a measurable X-ray signal Lx1' or Lx2' is generated by reflection, diffraction, scattering or transmission depending on the respective angle of incidence, wherein the X-ray detectors 224, 244 can be used to receive the above-described X-ray signal Lx1' or Lx2' to be measured, generated by reflection, diffraction, scattering or transmission, and to generate corresponding X-ray spectral information by placing them at a suitable position.

[0044] In a first operating mode, the X-ray detectors 224, 244 can be arranged on an X-ray rotary mechanism 226 or 246, wherein the X-ray rotary mechanisms 226, 246 can each comprise one or more robot arms, each of which can have degrees of freedom in several directions, so that the X-ray detectors 224, 244 can rotate around the measurement sample SP simultaneously or separately.

[0045] In the first operating mode, the X-ray measurement subsystems 22, 24 can be arranged in the same plane, with the X-ray generators 220, 240 being stationary in this mode. It should be noted that the X-ray detectors 224, 224 can be varied depending on the position of the X-ray signals Lx1', Lx2' to be measured, which are generated by the measuring X-rays Lx1, Lx2 incident on the measurement sample SP.

[0046] In some embodiments, the X-ray measurement paths formed by the X-ray measurement subsystems 22 and 24 can be perpendicular to each other to enable measurements in different directions. For example, the X-ray measurement subsystem 24 can simultaneously measure at a specific azimuth angle ϕ while the X-ray measurement subsystem 22 is measuring, thus achieving simultaneous measurements in different directions. This can significantly increase the throughput of the measurement data and reduce the time required to generate X-ray spectral information. It is conceivable that a desired measurement in the same direction can be achieved by controlling the X-ray measurement subsystems 22 and 24 so that the measurement conditions are identical.

[0047] In addition to controlling the position of the X-ray detectors 224, 244, the multi-axis sample carrier 20 can be modified depending on the angular range to be measured. If the angular range to be measured is θA to θB, the X-ray measurement subsystem 22 can be responsible for a measurement angular range from θA to (θA+θB) / 2 and the X-ray measurement subsystem 24 for a measurement angular range from (θA+θB) / 2 to θB. To achieve this, the multi-axis sample carrier 20 must be rotated through an angular range from θA to (θA+θB) / 2. By simultaneously using the X-ray measurement subsystems 22, 24 for measurement in combination with the actuation of the multi-axis sample carrier 20, it is possible to perform simultaneous measurements in the angular ranges from θA to (θA+θB) / 2 and (θA+θB) / 2 to θB, so that in the first operating mode data in the angular range from θA to θB can be acquired in half the time.Furthermore, by fixing the X-ray generators 220, 240, changes in the beam path caused by movements of the X-ray generators 220, 240 can be reduced, thereby reducing the time required for recalibrating the beam path.

[0048] Fig. Figure 14 shows a schematic representation of a second operating mode of the combined semiconductor inspection system of the second embodiment of the present invention. As in Fig. As shown in Figure 14, the X-ray generator 220 and the X-ray detector 244 can be arranged in the second operating mode on an X-ray rotary mechanism 226 and 246 respectively, wherein the X-ray rotary mechanisms 226, 246 can each comprise one or more robot arms, each of which can have degrees of freedom in several directions, so that the X-ray generator 220 and the X-ray detector 224 can rotate around the measurement sample SP simultaneously or separately.

[0049] In the second operating mode, the X-ray measurement subsystems 22 and 24 can be arranged in the same plane. In contrast to Fig. However, in 13, the X-ray generator 240 and the X-ray detector 224 are fixed on one side of the sample SP, while the X-ray generator 220 and the X-ray detector 244 are movable on the other side of the sample SP. In other embodiments, the X-ray generator 240 and the X-ray detector 224 can also be attached to the X-ray rotating mechanism 226 and 246, respectively, while the X-ray generator 220 and the X-ray detector 244 are not movable on the other side of the sample SP.

[0050] It should be noted that the X-ray generator 220 and the X-ray detector 244 can be varied depending on the position of the X-ray signals Lx1', Lx2' to be measured, which are generated by the measuring X-rays Lx1, Lx2 incident on the sample SP. If the angular range to be measured is θA to θB, the X-ray measuring subsystem 22 can be responsible for a measuring angular range from θA to (θA+θB) / 2 and the X-ray measuring subsystem 24 for a measuring angular range from (θA+θB) / 2 to θB. To achieve this, the multi-axis sample carrier 20 must be rotated through an angular range from θA to (θA+θB) / 2.By simultaneously using the X-ray measurement subsystems 22 and 24 for measurement in combination with the actuation of the multi-axis sample carrier 20, it is possible to perform simultaneous measurements in the angular ranges from θA to (θA+θB) / 2 and (θA+θB) / 2 to θB, so that even in the second operating mode, data in the angular range from θA to θB can be acquired in half the time. Furthermore, the actuation of the respective mechanism can be simplified, since it is only necessary to move the X-ray generator and the X-ray detector, which are mounted on the same side.

[0051] Fig. Figure 15 shows a schematic representation of a third operating mode of the combined semiconductor inspection system of the second embodiment of the present invention. As in Fig. As shown in Figure 15, in the third operating mode the X-ray generators 220, 240 and the X-ray detectors 224, 244 can each be arranged on an X-ray rotary mechanism 226, 227, 246 or 247, wherein the X-ray rotary mechanisms 226, 227, 246, 247 can each comprise one or more robot arms, each of which can have degrees of freedom in several directions, so that the X-ray generator 220 and the X-ray detector 224 can rotate around the measurement sample SP simultaneously or separately.

[0052] In the third operating mode, the X-ray measurement subsystems 22 and 24 are not restricted to lying in the same plane. However, the multi-axis sample carrier 20 can be fixed, while the X-ray generators 220 and 240 are moved to specific positions relative to each other, depending on the angular range to be measured. The measurement angular ranges of the X-ray measurement subsystems 22 and 24 can differ. For example, if the angular range to be measured is θA to θB, the X-ray measurement subsystem 22 can be responsible for a measurement angular range from θA to (θA+θB) / 2, and the X-ray measurement subsystem 24 for a measurement angular range from (θA+θB) / 2 to θB. If the X-ray measurement subsystems 22, 24 are located in the same plane, simultaneous measurements in the angular ranges θA to (θA+θB) / 2 and (θA+θB) / 2 to θB can be achieved in this way, which means that in this mode data can be acquired for the measurement angles A to B in half the time.If the X-ray measurement subsystems 22, 24 are located in different spatial planes, the effect of simultaneous measurement in different directions can be achieved and the measurement time can be reduced by half.

[0053] Although two X-ray measurement subsystems 22, 24 are used in the present embodiment, the present invention is not limited thereto. The number of X-ray measurement subsystems can be configured according to the user's needs. Furthermore, the number of X-ray generators, X-ray optics, and X-ray detectors is not limited to those shown in the present embodiment. Fig. The number shown is limited to 12 to 15.

[0054] Similar to the first embodiment, the processing device 26 can output the X-ray spectral information generated by the X-ray measurement subsystems 22, 24 as a measurement result of the measurement sample SP or further adapt the X-ray spectral information to obtain the structural parameters of the measurement sample SP as a measurement result. [Third embodiment]

[0055] Fig. Figure 16 shows a functional block diagram of a combined semiconductor inspection system of a third embodiment of the present invention. Fig. Figure 17 shows a top view of a measurement architecture of the combined semiconductor inspection system of the third embodiment of the present invention.

[0056] With reference to Fig. 16 and Fig.17 The third embodiment of the present invention provides a combined semiconductor inspection system 3 comprising a multi-axis sample carrier 30, an optical measurement subsystem 32, an X-ray measurement subsystem 34 and a processing device 36.

[0057] The multi-axis sample carrier 30 is similar to the multi-axis sample carrier 10 of the first embodiment and will not be described in further detail here. The optical measuring subsystem 32 comprises a light source generator 320, an incident-side optic 322, a receiving-side optic 324, and an optical receiver 326. The light source generator 320 serves to generate a measurement light beam Lm with a wavelength in an optical wavelength range that includes at least the UV wavelength range up to the near-infrared wavelength range. More precisely, the light source generator 320 can generate a measurement light beam Lm with a wavelength between 200 nm and 3000 nm. In some embodiments, the light source generator 320 can, for example, include elements such as titanium-tantalum crystal lasers, mercury arc lamps, or halogen lamps to generate measurement light beams Lm with different wavelengths.

[0058] The incident-side optics 322 serve to direct the measuring light beam onto the test specimen. The incident-side optics 322 can comprise one or more optical elements. In the present embodiment, the incident-side optics 322 can, for example, comprise an optical filter, an optical collimator, an optical polarizer, and an optical compensator, which are arranged sequentially between the light source generator 320 and the test specimen SP; however, the present invention is not limited thereto. Rather, suitable optical elements for the incident-side optics 322 can be selected according to the user's needs. The optical filter can be used to filter the measuring light beam Lm generated by the light source generator 320 in order to absorb stray light outside the desired inspection wavelength.The optical collimator can collimate the diverging light generated by the light source generator 320 into a symmetrical and orderly measuring light beam Lm. The optical polarizer can be used to filter the measuring light beam Lm, allowing light from a specific direction to pass through and imparting polarization properties to the measuring light beam Lm. The optical compensator can convert the light source, after it has passed through the optical polarizer, into circularly polarized or elliptically polarized light.

[0059] Similarly, the receiving optics 324 can also comprise one or more optical elements and serves to receive an optical signal Lm' to be measured, which is generated by irradiating the sample SP with the measuring light beam Lm. The receiving optics 324 can include, in sequence, an optical filter, an optical collimator, an optical polarizer, and an optical compensator as optical elements. The use of the optical filter and the optical collimator will not be repeated here. The optical polarizer at the receiving end can be a rotational polarizer, which converts the measuring light beam Lm into a light source with polarization properties after it has passed through the optical compensator of the incident optics 322. Analogously, the optical compensator of the receiving optics 324 can be a rotational compensator, the rotation of which can increase the accuracy during the measurement.

[0060] The optical receiver 326 serves to receive the optical signal Lm' to be measured, which is guided by the receiving optics 324, and to generate optical spectral information associated with the optical signal Lm' to be measured. The optical receiver 326 can, for example, be a spectrometer that receives the optical signal Lm' to be measured after reflection or scattering at the sample SP.

[0061] During the measurement, the processing device 36 can control the multi-axis sample carrier 30 so that it moves and / or rotates, so that the optical receiver 326 of the optical measurement subsystem 32 receives several optical signals Lm' to be measured, which are generated at several optical measurement positions and / or under several optical measurement angles, and generates several optical spectral information associated with the optical signals Lm' to be measured.

[0062] Furthermore, the light source generator 320 and the optical receiver 326 are arranged on an optical rotary mechanism 328, which can include one or more robot arms connected to the light source generator 320 and the optical receiver 326, each of which can have degrees of freedom in several directions, so that the light source generator 320 and the optical receiver 326 can rotate around the measurement sample SP simultaneously or separately.In this architecture, the processing device 36 can simultaneously control the rotation of the optical rotation mechanism 328 while controlling the movement and / or rotation of the multi-axis sample carrier 30, in order to cause the light source generator 320 to emit the measuring light beam Lm in several directions, and to cause the optical receiver 326 to receive the generated multiple optical signals Lm' to be measured from multiple optical measuring angles and to generate multiple corresponding optical spectral information.

[0063] The X-ray measurement subsystem 34 is essentially similar to the X-ray measurement system 1. The X-ray measurement subsystem 34 comprises an X-ray generator 340, an X-ray optic 342, and an X-ray detector 344. It should be noted that the X-ray generator 340 is configured identically to the X-ray generator 12 of the first embodiment and also uses an X-ray target as the anode, in which several excitation targets are distributed and embedded in a heat dissipation substrate to improve heat dissipation efficiency. Details and advantages of the X-ray generator 340 are described in the first embodiment and are not repeated here.

[0064] The X-ray optics 342 serve to direct the measuring X-ray beam Lx onto the sample. The measuring X-ray beam Lx is primarily used in X-ray analysis and can, for example, be a beam with a wavelength range greater than 0.1 nm and include a hard X-ray beam, a soft X-ray beam, or a gamma beam.

[0065] When a measuring X-ray beam Lx is directed onto the sample SP, a measurable X-ray signal Lx' is generated by reflection, diffraction, scattering, or transmission, depending on the angle of incidence. The X-ray detector 344 can be used to receive the measurable X-ray signal Lx' generated by reflection, diffraction, scattering, or transmission, and to generate corresponding X-ray spectral information by being placed in a suitable position. The X-ray detector 344 can be a detector with high spatial resolution in more than one dimension and can receive measurable X-ray signals Lx' with an energy greater than 1 keV.

[0066] During the measurement, the processing device 36 can control the movement and / or rotation of the multi-axis sample carrier 30 so that the X-ray detector 344 receives several X-ray signals Lx' to be measured, generated at several optical measurement positions and / or under several X-ray measurement angles, and generates several X-ray spectral information associated with these X-ray signals Lx' to be measured.

[0067] Furthermore, the X-ray generator 340 and the X-ray detector 344 are arranged on an X-ray rotation mechanism 346, which can include one or more robot arms connected to the X-ray generator 340 and the X-ray detector 344. Each of these robot arms can have degrees of freedom in multiple directions, allowing the X-ray generator 340 and the X-ray detector 344 to rotate simultaneously or separately around the measurement sample SP. In this architecture, the processing device 36 can simultaneously control the rotation of the X-ray rotation mechanism 346 while controlling the movement and / or rotation of the multi-axis sample carrier 30. This enables the X-ray generator 340 to emit the measurement X-ray beam Lx in multiple directions and the X-ray detector 344 to receive the multiple X-ray signals Lx' generated from multiple X-ray measurement angles and to generate multiple corresponding X-ray spectral information signals.

[0068] Furthermore, the combined semiconductor inspection system 3 of the present invention can perform measurements in both different directions and in the same direction. For example, the optical measuring subsystem 32 can simultaneously measure at a specific azimuth angle ϕ during the measurement by the X-ray measuring subsystem 34 in order to achieve simultaneous measurement in different directions.However, if a measurement in the same direction is desired, after completion of the measurement by the X-ray measuring subsystem 34, the measuring sample SP can be rotated by rotating the multi-axis sample carrier 30 along the Z-axis by the corresponding azimuth angle ϕ, so that the X-ray measuring subsystem 34 and the optical measuring subsystem 32 can measure at the same position under the same spatial conditions and thus an accurate measurement of the X-ray signal Lx' to be measured and the optical signal Lm' to be measured from the same orientation and position in one and the same system is achieved.

[0069] The processing device 36, which may be, for example, a computer system with a processor and memory, can be configured to execute a stored instruction set or program code to control controllable elements in the multi-axis sample carrier 30, the optical measurement subsystem 32, and the X-ray measurement subsystem 34. Furthermore, the processing device 36 can output the optical and X-ray spectral information as a measurement result of the sample SP or further process the optical and X-ray spectral information to obtain the structural parameters of the sample SP as a measurement result. These structural parameters include one or more of the following: thickness, roughness, density, critical dimension, line edge roughness, refractive index, and extinction coefficient.

[0070] For example, the processing device 36 can adjust the optical spectral information and the X-ray spectral information. The optical spectral information can include, for example, reflection spectra obtained by striking the measurement light beam Lm on the measurement sample SP at several different angles of incidence, while the X-ray spectral information can include, for example, reflection spectra obtained by striking the measurement X-ray beam Lx on the measurement sample SP at several different angles of incidence. The adjustment result can include structural parameters of the measurement sample SP.

[0071] In particular, the processing device 36 can adapt the optical spectral information and the X-ray spectral information to reconstruct important structural parameters of the measurement sample SP.

[0072] In the present embodiment, the optical spectral information can be generated by various interaction mechanisms between the measuring light beam Lm and the measuring sample SP. For example, the optical spectral information can include optical reflection spectral information and optical scattering spectral information. The optical reflection spectral information can be obtained by controlling the azimuth angles θ and ϕ such that the light source generator 320 directs the measuring light beam Lm at several wavelengths and several angles of incidence, and the optical receiver 326 detects the optical signals Lm' generated by reflection, which are to be measured. Similarly, the optical scattering spectral information can be obtained by the optical receiver 326 detecting the optical signals Lm' generated by scattering, which are to be measured.Accordingly, the processing device 36 can statistically adjust the optical reflection spectral information and the optical scattering spectral information within the framework of an adaptation analysis process in order to reconstruct the important structural parameters of the measurement sample SP.

[0073] Similarly, X-ray spectral information can be generated through various interaction mechanisms between the measuring X-ray beam Lx and the sample SP. This X-ray spectral information can include, for example, X-ray reflection spectral information, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information. X-ray reflection spectral information can be obtained by controlling the azimuth angles θ and ϕ such that the X-ray detector 344 detects the X-ray signals Lx' generated by reflection. Similarly, X-ray scattering spectral information, X-ray diffraction spectral information, and X-ray fluorescence spectral information can be obtained by having the X-ray detector 344 detect the X-ray signals Lx' generated by scattering, diffraction, and fluorescence excitation, respectively.Accordingly, the processing device 36 can perform an analysis of the X-ray reflection spectral information, X-ray scattering spectral information, X-ray diffraction spectral information and X-ray fluorescence spectral information, including X-ray reflection analysis (XRR), X-ray diffraction analysis (XRD), small-angle X-ray scattering analysis (SAX) and X-ray fluorescence analysis (XRF), as part of an adaptation analysis process, in order to reconstruct the important structural parameters of the measurement sample SP.

[0074] For example, when the X-ray beam Lx strikes the surface of the sample SP, XRR analysis can determine the structural parameters of the sample SP. If the sample SP comprises a multilayer structure, for instance, the XRR analysis can determine the density, thickness, roughness, etc., of each layer based on the acquired X-ray reflectance spectral information. Conversely, if the sample SP contains minute components (such as a gate-all-around and complementary field-effect transistor (GAA-FET)), the XRR analysis can determine, among other things, the orientation and critical dimensions of the GAA-FET based on the acquired X-ray reflectance spectrum. [Advantageous effects of the exemplary embodiments]

[0075] One of the advantageous effects of the present invention is that, in the X-ray measurement system and the combined semiconductor inspection system according to the present invention, a larger contact area between the excitation targets and the heat dissipation substrate can be provided, and the heat dissipation capacity improved, by adding a high-entropy alloy material (HEAMs) to the X-ray target as the anode and by distributing multiple excitation targets into the heat dissipation substrate. Furthermore, the line focus principle controls the X-ray radiation to the ideal size, effectively solving the problem of X-ray flux being impaired due to damage to the anode by the electron beam.

[0076] Furthermore, the combined semiconductor inspection system according to the present invention provides more than three operating modes, which can simplify the design of the mechanism, reduce the time required for calibrating the optical path and effectively more than double the measurement efficiency.

[0077] The above disclosure merely presents preferred possible embodiments of the present invention and is not intended to limit the scope of protection of the claims of the present disclosure, so that all equivalent technical modifications made by applying the content of the description and the drawings of the present disclosure are included in the scope of protection of the claims of the present invention. Reference symbol list 1 X-ray measuring system 2, 3 Combined semiconductor inspection system 10, 20, 30 Multi-axis sample carrier 12, 220, 240, 340 X-ray generator 120 electron beam generator 122 Electromagnetic lens set 123 Target actuating device 124, 124', 124'', 124''' X-ray target 1240, 1240', 1240'', 1240''' Heat dissipation substrate 1242, 1242', 1242'', 1242'' Stimulation target Sr, Sr'', Sr''' Light-receiving surface W1 width 126 Vacuum chamber 1262 Vacuum pump EB Incident electron beam 14, 222, 242, 342 X-ray optics 16, 224, 244, 344 X-ray detector 11, 226, 227, 246, 247, 346 X-ray rotation mechanism 18, 26, 36 Processing device 22, 24, 34 X-ray measurement subsystem 320 light source generator 322 Incidence-side optics 324 Receiving-side optics 326 Optical Receiver SP sample X, Y, Z axis θ, ϕ Azimuth angle θ1 Given angle θi angle of incidence Lm measuring light beam Lx1, Lx2 Measuring X-ray beam Lm' Optical signal to be measured 328 Optical rotating mechanism Lx, Lx1, Lx2 measuring x-ray Lx', Lx1', Lx2' X-ray signal to be measured OP Optical Measurement Path II, II-II, III-III, IV-IV cutting line Sv Vertical distance Sh Horizontal Distance Wv, Wh width S1 First surface Direction of rotation C1, C2 Middle C3 Lower Center

Claims

[1] X-ray measuring system (1), comprising: - a multi-axis sample carrier (10, 20, 30) used to carry a measurement sample (SP); - an X-ray generator (12, 220, 240, 340) with - an electron beam generator (120) which serves to generate an incident electron beam (EB); - an electromagnetic lens set (122) which serves to focus the incident electron beam (EB) and simultaneously control the focusing position of the incident electron beam (EB); - an X-ray target (124, 124', 124'', 124''') arranged on a target actuation device (123) which receives the focused incident electron beam (EB) at an angle of incidence (θi) and generates a measurement X-ray beam (Lx1, Lx2), wherein the X-ray target (124, 124', 124'', 124''') comprises a heat dissipation substrate (1240, 1240', 1240'', 1240''') and several excitation targets (1242, 1242', 1242'', 1242'''), wherein the excitation targets (1242, 1242', 1242'', 1242''') are distributed in the heat dissipation substrate (1240, 1240', 1240'', 1240'''') are embedded; and - a vacuum chamber (126) which serves to accommodate the electron beam generator (120), the electromagnetic lens set (122), the target actuation device (123) and the X-ray target (124, 124', 124'', 124''') and is equipped with a window for the passage of the measuring X-ray beam (Lx1, Lx2); - an X-ray optic (14, 222, 242, 342) which serves to direct the measuring X-ray beam (Lx1, Lx2) onto the measuring sample (SP); - an X-ray detector (16, 224, 244, 344) which serves to receive a measured X-ray signal (Lx', Lx1', Lx2') generated by irradiating the measurement sample (SP) with the measuring X-ray beam (Lx1, Lx2) and to generate X-ray spectral information associated with the measured X-ray signal (Lx', Lx1', Lx2'); and - a processing device (18, 26, 36) configured to output a measurement result of the measurement sample (SP) based on the X-ray spectral information. [2] X-ray measuring system (1) according to claim 1, wherein the target actuation device (123) then, when the X-ray target (124, 124', 124'', 124''') receives the focused incident electron beam (EB) and generates the measuring X-ray beam (Lx1, Lx2), moves the X-ray target (124, 124', 124'', 124''') such that an incident position at which the incident electron beam (EB) hits the X-ray target (124, 124', 124'', 124''') varies over time. [3] X-ray measuring system (1) according to claim 1 or 2, wherein the heat dissipation substrate (1240, 1240', 1240'', 1240''') is a plate, while the excitation targets (1242, 1242', 1242'', 1242''') are several rings arranged successively from the inside out around the center (C1, C2) of the plate. [4] X-ray measuring system (1) according to claim 3, wherein each of the rings has a rectangular cross-section and a light-receiving surface (Sr, Sr'', Sr''') which does not touch the plate. [5] X-ray measuring system (1) according to claim 3 or 4, wherein each of the rings has a triangular cross-section having a chamfered edge inclined at a predetermined angle (θ1) with respect to a first surface (S1) of the plate, wherein the predetermined angles (θ1) of the rings are different from each other. [6] X-ray measuring system (1) according to claim 5, wherein the predetermined angles (θ1) of the rings gradually increase from the center (C1, C2) of the plate outwards. [7] X-ray measuring system (1) according to claim 3, wherein the plate is a bowl-shaped plate, wherein each of the rings is arranged around a lower center (C3)(C1, C2) of the bowl-shaped plate and has a light-receiving surface (Sr, Sr'', Sr''') which does not touch the bowl-shaped plate. [8] X-ray measuring system (1) according to claim 2, wherein the heat dissipation substrate (1240, 1240', 1240'', 1240''') is designed as a plate, while the excitation targets (1242, 1242', 1242'', 1242''') are multiple blocks arranged in an array on a first surface (S1) of the plate, each of the blocks having a light-receiving surface (Sr, Sr'', Sr''') that does not touch the plate. [9] X-ray measuring system (1) according to claim 3, wherein the area of ​​an electron beam cross-section created by the impact of the incident electron beam (EB) on the X-ray target (124, 124', 124'', 124''') is smaller than the area of ​​a first surface (S1) of the plate. [10] Combined semiconductor inspection system (2, 3), comprising: - a multi-axis sample carrier (10, 20, 30) used to carry a measurement sample (SP); - at least two X-ray measurement subsystems (22, 24, 34), each comprising the following: - an X-ray generator (12, 220, 240, 340) with - an electron beam generator (120) which serves to generate an incident electron beam (EB); - an electromagnetic lens set (122) which serves to focus the incident electron beam (EB) and simultaneously control the focusing position of the incident electron beam (EB); - an X-ray target (124, 124', 124'', 124''') arranged on a target actuation device (123) which receives the focused incident electron beam (EB) at an angle of incidence (θi) and generates a measurement X-ray beam (Lx1, Lx2), wherein the X-ray target (124, 124', 124'', 124''') comprises a heat dissipation substrate (1240, 1240', 1240'', 1240''') and several excitation targets (1242, 1242', 1242'', 1242'''), wherein the excitation targets (1242, 1242', 1242'', 1242''') are distributed in the heat dissipation substrate (1240, 1240', 1240'', 1240'''') are embedded; and - a vacuum chamber (126) which serves to accommodate the electron beam generator (120), the electromagnetic lens set (122), the target actuation device (123) and the X-ray target (124, 124', 124'', 124''') and is equipped with a window for the passage of the measuring X-ray beam (Lx1, Lx2); - an X-ray optic (14, 222, 242, 342) which serves to direct the measuring X-ray beam (Lx1, Lx2) onto the measuring sample (SP); - an X-ray detector (16, 224, 244, 344) which serves to receive a measured X-ray signal (Lx', Lx1', Lx2') generated by irradiating the measurement sample (SP) with the measuring X-ray beam (Lx1, Lx2) and to generate X-ray spectral information associated with the measured X-ray signal (Lx', Lx1', Lx2'); and - a processing device (18, 26, 36) configured to output a measurement result of the measurement sample (SP) based on the X-ray spectral information generated by the at least two X-ray measurement subsystems (22, 24, 34). [11] Combined semiconductor inspection system (2, 3) according to claim 10, wherein the target actuation device (123) then, when the X-ray target (124, 124', 124'', 124''') receives the focused incident electron beam (EB) and generates the measuring X-ray beam (Lx1, Lx2), moves the X-ray target (124, 124', 124'', 124''') such that an incident position at which the incident electron beam (EB) hits the X-ray target (124, 124', 124'', 124''') varies over time. [12] Combined semiconductor inspection system (2, 3) according to claim 10 or 11, wherein the heat dissipation substrate (1240, 1240', 1240'', 1240''') is a plate, while the excitation targets (1242, 1242', 1242'', 1242''') are multiple rings arranged successively from the inside out around the center (C1, C2) of the plate. [13] Combined semiconductor inspection system (2, 3) according to claim 12, wherein each of the rings has a rectangular cross-section and a light-receiving surface (Sr, Sr'', Sr''') that does not touch the plate. [14] Combined semiconductor inspection system (2, 3) according to claim 12 or 13, wherein each of the rings has a triangular cross-section having a chamfered edge inclined at a predetermined angle (θ1) with respect to a first surface (S1) of the plate, wherein the predetermined angles (θ1) of the rings are different from each other. [15] Combined semiconductor inspection system (2, 3) according to claim 14, wherein the predetermined angles (θ1) of the rings gradually increase from the center (C1, C2) of the plate outwards. [16] Combined semiconductor inspection system (2, 3) according to claim 12, wherein the plate is a bowl-shaped plate, wherein each of the rings is arranged around a lower center (C3)(C1, C2) of the bowl-shaped plate and has a light-receiving surface (Sr, Sr'', Sr''') which does not touch the bowl-shaped plate. [17] Combined semiconductor inspection system (2, 3) according to claim 11, wherein the heat dissipation substrate (1240, 1240', 1240'', 1240''') is designed as a plate, while the excitation targets (1242, 1242', 1242'', 1242''') are multiple blocks arranged in an array on a first surface (S1) of the plate, each of the blocks having a light-receiving surface (Sr, Sr'', Si''') that does not touch the plate. [18] Combined semiconductor inspection system (2, 3) according to claim 12, wherein the area of ​​an electron beam cross-section created by the impact of the incident electron beam (EB) on the X-ray target (124, 124', 124'', 124''') is smaller than the area of ​​a first surface (S1) of the plate. [19] Combined semiconductor inspection system (2, 3) according to any one of claims 10 to 18, wherein - the multi-axis sample carrier (10, 20, 30) has a carrier movement mechanism and a carrier rotation mechanism, wherein the carrier movement mechanism is used to move the sample (SP) along one or more axes of a first axis (X, Y, Z), a second axis (X, Y, Z) and a third axis (X, Y, Z) and the carrier rotation mechanism is used to rotate the sample (SP) about one or more axes of the first axis (X, Y, Z), the second axis (X, Y, Z) and the third axis (X, Y, Z), wherein the X-ray detector (16, 224, 244, 344) of each of the X-ray measurement subsystems (22, 24, 34) is arranged on an X-ray rotation mechanism (11, 226, 227, 246, 247, 346) such that the X-ray detector (16, 224, 244, 344) rotates simultaneously or separately about the sample (SP) rotates; - the processing device (18, 26, 36) is further configured to control the movement and / or rotation of the multi-axis sample carrier (10, 20, 30) and the rotation of each of the X-ray rotation mechanisms (11, 226, 227, 246, 247, 346) such that the X-ray detector (16, 224, 244, 344) of each of the X-ray measurement subsystems (22, 24, 34) receives the multiple X-ray signals (Lx', Lx1', Lx2') to be measured and generates the multiple X-ray spectral information associated with the X-ray signals (Lx', Lx1', Lx2') to be measured. [20] Combined semiconductor inspection system (2, 3) according to any one of claims 10 to 18, wherein - the multi-axis sample carrier (10, 20, 30) has a carrier movement mechanism and a carrier rotation mechanism, wherein the carrier movement mechanism is used to move the sample (SP) along one or more axes defined by a first axis (X, Y, Z), a second axis (X, Y, Z) and a third axis (X, Y, Z) and the carrier rotation mechanism is used to rotate the sample (SP) about one or more axes defined by the first axis (X, Y, Z), the second axis (X, Y, Z) and the third axis (X, Y, Z), wherein the X-ray generator (12, 220, 240, 340) of each of the X-ray measurement subsystems (22, 24, 34) is arranged on an X-ray rotation mechanism (11, 226, 227, 246, 247, 346) such that the X-ray generator (12, 220, 240, 340) rotates simultaneously or separately about the sample (SP) rotates; - the processing device (18, 26, 36) is further configured to control the movement and / or rotation of the multi-axis sample carrier (10, 20, 30) and the rotation of each of the X-ray rotation mechanisms (11, 226, 227, 246, 247, 346) such that the X-ray detector (16, 224, 244, 344) of each of the X-ray measurement subsystems (22, 24, 34) receives the multiple X-ray signals (Lx', Lx1', Lx2') to be measured and generates the multiple X-ray spectral information associated with the X-ray signals (Lx', Lx1', Lx2') to be measured. [21] Combined semiconductor inspection system (2, 3) according to any one of claims 10 to 18, wherein - the X-ray generator (12, 220, 240, 340) and the X-ray detector (16, 224, 244, 344) of each of the X-ray measurement subsystems (22, 24, 34) are arranged on an X-ray rotation mechanism (11, 226, 227, 246, 247, 346) such that the X-ray generator (12, 220, 240, 340) and the X-ray detector (16, 224, 244, 344) rotate simultaneously or separately around the measurement sample (SP); - the processing device (18, 26, 36) is further configured to control the rotation of each of the X-ray rotation mechanisms (11, 226, 227, 246, 247, 346) such that the X-ray detector (16, 224, 244, 344) of each of the X-ray measurement subsystems (22, 24, 34) receives the multiple X-ray signals (Lx', Lx1', Lx2') to be measured and generates the multiple X-ray spectral information associated with the X-ray signals (Lx', Lx1', Lx2') to be measured. [22] Combined semiconductor inspection system (2, 3), comprising: - a multi-axis sample carrier (10, 20, 30) used to carry a measurement sample (SP); - an optical measurement subsystem (32) with - a light source generator (320) for generating a measuring light beam (Lm) with a wavelength in an optical wavelength range that includes at least the UV wavelength range up to the near-infrared wavelength range; - an incident-side optic (322) which serves to direct the measuring light beam (Lm) onto the measuring sample (SP); - a receiving optic (324) for receiving an optical signal (Lm') to be measured, which is generated by irradiating the sample (SP) with the measuring light beam (Lm); and - an optical receiver (326) which serves to receive the optical signal (Lm') to be measured from the receiving optics (324) and to generate optical spectral information associated with the optical signal (Lm') to be measured; - an X-ray measurement subsystem (22, 24, 34) with - an X-ray generator (12, 220, 240, 340) according to one of claims 1 to 9; - an X-ray optic (14, 222, 242, 342) which serves to direct the measuring X-ray beam (Lx1, Lx2) onto the measuring sample (SP); and - an X-ray detector (16, 224, 244, 344) which serves to receive a measured X-ray signal (Lx', Lx1', Lx2') generated by irradiating the measurement sample (SP) with the measuring X-ray beam (Lx1, Lx2) and to generate X-ray spectral information associated with the measured X-ray signal (Lx', Lx1', Lx2'); and - a processing device (18, 26, 36) configured to output a measurement result of the measurement sample (SP) based on the optical spectral information and the X-ray spectral information.

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