Optical inspection equipment and optical inspection method using visible and infrared light for semiconductor components

Description

background

[0001] An optical inspection device using visible and infrared light for semiconductor components is described here.

[0002] A semiconductor component, for example, is an electronic component made primarily of silicon, also referred to as a "chip" or "die." Such a component typically has a rectangular or square cross-section with several lateral surfaces, as well as a front surface and a top surface. The lateral surfaces and the two (lower and upper) top surfaces of the component are generally referred to as "surfaces" below. The component can also have a number of lateral surfaces other than four.

[0003] From the applicant's operational practice, so-called pick-and-place devices are known in which components are picked up from a component table using a suction cup or clamp and then placed on a carrier or in a transport container, etc. Before the component is placed, an inspection of the component usually takes place. For this purpose, images of one or more side surfaces of the component are captured with one or more cameras and evaluated using automated image processing. State of the art

[0004] Optical inspection devices for inspecting semiconductor components during or after production are known in the art. DE 10 2010 053 912 B4 by the same applicant discloses an optical inspection device and an optical inspection method for the external inspection of electronic components, including a component conveyor that transports the components to various inspection areas. In the various inspection areas, different surfaces of the component are illuminated, and images of different surfaces are captured using a camera arrangement.

[0005] Document DE 10 2012 010 406 A1 discloses a device for testing a solar cell. The solar cell is successively illuminated with light of different wavelengths or colors. The resulting images are used to check for external damage. In addition, the back of the solar cell is illuminated with infrared light, which partially penetrates the solar cell. An image captured in the infrared range is used to check for internal damage.

[0006] Document DE 11 2008 002 282 T2 discloses a device for inspecting printed circuit boards. A printed circuit board is successively exposed to radiation of different wavelengths. Image captures are created and compared with reference captures to verify that the board is free of damage. The radiation can include light in the infrared or near-infrared wavelength range.

[0007] Document WO 2009 / 124817 A1 describes an optical detection device and a method for detecting the surfaces of components. The surface of a component is illuminated with light from different light sources and at different wavelengths, while a camera device captures images of the component.

[0008] Document US 6 094 263 A shows a device for the optical inspection of semiconductor components. An arrangement of optically active elements enables the recording of a plurality of side surfaces of the component on a common image acquisition system.

[0009] US 2011 / 0025838 A1 discloses a device for testing wafers for defects. The device comprises a holder with which a wafer to be tested is held. The device further comprises a first light source / image recording unit arranged opposite the front side of the wafer. The first light source / image recording unit comprises a first light source for emitting visible light and infrared radiation and a first image recording device for recording an image of the front side of the wafer. The device further comprises a second light source / image recording unit arranged opposite the back side of the wafer. The second light source / image recording unit comprises a second light source for emitting visible light and infrared radiation and a second image recording device for recording an image of the back side of the wafer.Infrared radiation emitted by the first light source onto the front side of the wafer is reflected by the front side of the wafer and captured by the first image recording device as a first reflection image. The same applies to visible light emitted by the first light source. Infrared radiation emitted by the second light source onto the back side of the wafer partially penetrates the wafer and is captured by the first image recording device as a transmission image. Infrared radiation emitted by the second light source onto the back side of the wafer is reflected by the back side of the wafer and captured by the second image recording device as a second reflection image. The same applies to visible light emitted by the second light source. A defect image is generated from the images thus captured and displayed on a monitor.

[0010] US 2008 / 0107509 A1 discloses a robot arm with a fork-like gripper suitable for gripping a wafer using negative pressure. The negative pressure acts via several openings formed along the fork shape of the gripper. The gripper can be rotated about different axes. The gripper is particularly suitable for gripping deformed wafers, for example, bent or twisted wafers. Problem to be solved

[0011] An improved optical inspection device is intended to enable inspection of a semiconductor component for damage or property defects from multiple viewing directions. Solution presented here

[0012] This object is achieved by an optical inspection device, an inspection device as defined in claims 1 or 2, which is suitable and intended for detecting properties of a component, in particular in a component handling device that includes the optical inspection device. The inspection device has at least two differing detection spectra, one of which is assigned to the infrared range. It is particularly suitable and intended for simultaneously detecting property defects on the surface and in the interior of a semiconductor component. The optical inspection device includes an imaging device that is suitable and intended for interacting with radiation sources that are matched to one another with regard to their radiation spectrum and radiation incidence angle.The imaging device is suitable and configured to provide a separate image acquisition for each of the detection spectra of a downstream image evaluation.

[0013] The optical inspection device presented here is suitable and intended for detecting properties of a rectangular semiconductor component detached from a substrate. It comprises a first illumination arrangement, a second illumination arrangement, and an imaging device. The first illumination arrangement is suitable and intended for emitting infrared light perpendicularly onto two surfaces of the semiconductor component facing away from the imaging device, wherein the infrared light at least partially penetrates the semiconductor component completely. The second illumination arrangement is suitable and intended for emitting visible light, in particular red light, perpendicularly onto two surfaces of the semiconductor component facing the imaging device. The semiconductor component is illuminated simultaneously by the first and second illumination arrangements.The imaging device is designed and arranged to capture both the light spectrum emitted by the first and the second illumination arrangement and to provide a downstream image analysis system, based on both the visible and the infrared light spectrum, with a separate image acquisition for determining property defects and / or damage to the semiconductor component. The imaging device uses the same optical beam path, at least in sections, to capture the visible light reflected from the surfaces of the component and to capture the infrared light penetrating the component.

[0014] The inspection device comprises a removal device comprising a first receiving unit that receives a single rectangular semiconductor component detached from a substrate, and a second receiving unit that conveys the semiconductor component to an inspection position. Alternatively, the inspection device comprises a turning device that comprises at least one receiver that holds a rectangular semiconductor component by means of negative pressure.

[0015] According to the claimed invention, the optical examination device includes a number of optically effective elements, in particular deflecting mirrors, prisms, color filters and / or lenses, which are suitable for visible and / or infrared light.

[0016] In one variant, the optical inspection device includes at least one half-mirror, wherein the half-mirror is arranged at an angle of approximately 45° to the optical axis of the imaging device and serves to optically couple light from the first and / or second illumination arrangement and direct it onto the component. The half-mirror is suitable and arranged to direct the visible light reflected by the component and the infrared light penetrating the component onto the imaging device.

[0017] According to the claimed invention, the first and / or second illumination arrangement each consists of a plurality of LEDs. The LEDs of the first illumination arrangement are suitable for emitting infrared light (1200 nm plus or minus 100 nm) and / or the LEDs of the second illumination arrangement are suitable for emitting visible light, for example red light.

[0018] to emit light (for example 630 nm plus or minus 30 nm).

[0019] In one variant, the LEDs of the first and / or second illumination arrangement are arranged such that they each illuminate a plurality of surfaces of the semiconductor component. This can also be achieved by using one or more optically active elements to direct the light emitted by the LEDs onto a plurality of surfaces of the semiconductor component.

[0020] The imaging device comprises two imaging sensors, in particular camera sensors. The first and second imaging sensors are directed at two different surfaces of the semiconductor component, either directly or by means of optically active elements. Furthermore, the first and second imaging sensors are each configured and arranged to detect and process both the visible light emitted by the first illumination device and the infrared light emitted by the second illumination device. Furthermore, the two imaging sensors are configured and arranged to provide a separate image acquisition for a downstream image evaluation, based on both the visible and the infrared light.

[0021] In one variant, the first illumination arrangement and / or the second illumination arrangement and / or a single or a plurality of optically active elements are designed and arranged to be aligned and / or adjusted / focused independently of the others.

[0022] A method as defined in claim 5 for the optical examination of semiconductor components comprises the following method steps: Illuminating two different surfaces of a semiconductor component with infrared light, each of which at least partially penetrates the semiconductor component completely. Illuminating two different surfaces of the semiconductor component with visible light, wherein the surfaces illuminated with visible light are each opposite the surfaces illuminated with infrared light. Capturing the visible light reflected from the two surfaces of the component illuminated with visible light and the infrared light penetrating the component from the two surfaces illuminated with infrared light with at least one imaging device, in particular a camera, which each uses at least partially the same optical beam path for this purpose. Creating at least one image acquisition, based in each case on the visible light used for illumination and the infrared light used for illumination, by the imaging device.In particular, two image captures are created in the direction of the two surfaces of the component illuminated with visible light, with one of the two image captures being created based on the visible light reflected by the component surface and one based on the infrared light penetrating the component. Examination of the component for defects or damage through subsequent image analysis based on the image captures. Short description of the characters

[0023] Further features, properties, advantages, and possible modifications will become clear to a person skilled in the art from the following description, which refers to the accompanying drawings. The figures schematically show two exemplary embodiments of an optical inspection device for a semiconductor component, without limiting the variants of the described device to these. Fig. 1This schematically shows an inspection device for semiconductor components in which two cameras simultaneously capture two adjacent, rectangular surfaces of a semiconductor component illuminated with red light. At the same time, the inspection device allows the component to be illuminated with infrared light along two orthogonal axes, and the infrared light transmitted through the component to be captured by the two cameras. Fig. 1a shows a schematic side view of a removal device for receiving the semiconductor components detached from a substrate. Fig. 2This schematically shows an inspection device for semiconductor components in which two cameras simultaneously capture two opposing surfaces of a semiconductor component with a rectangular footprint. At the same time, the inspection device allows the component to be illuminated with infrared light and the infrared light transmitted through the component to be captured by the two cameras. Detailed description of the characters

[0024] Fig. 1 . shows an optical examination device 100. Here, a surface a and a surface b of a semiconductor component 2 with a rectangular plan are each illuminated with infrared light (1200 nm) by a first illumination arrangement 4, 6. The illumination arrangement 4, 6 consists of two mutually perpendicularly arranged

[0025] Sub-arrays, each of which is in turn composed of three LEDs. Sub-array 4 is formed by LEDs A, B, and C, and sub-array 6 is formed by LEDs G, H, and I. Both LEDs A, B, and C, as well as LEDs G, H, and I, are suitable and intended to emit infrared light (1200 nm) perpendicularly (90° plus or minus up to 20°) onto the two surfaces a and b of component 2.

[0026] Since semiconductor materials, in particular silicon, have a transparent characteristic with respect to infrared light, especially in the near-infrared range (approximately 780 nm, in particular 1000 nm, up to approximately 3000 nm / English abbreviation: NIR), at least a portion of the infrared light emitted by the illumination arrangement 4, 6 completely penetrates the semiconductor component 2. The infrared light incident perpendicularly on surfaces a and b into the semiconductor component 2 thus exits, at least partially, perpendicularly at surfaces c and d.

[0027] At the same time, the two surfaces c and d of the semiconductor component 2 are illuminated with red light (630 nm) by a second illumination arrangement 8, 10. The illumination arrangement 8, 10 consists of two sub-arrays arranged at right angles to each other, each of which is in turn formed by three LEDs. Sub-array 8 is formed by LEDs D, E, and F, and sub-array 10 is formed by LEDs J, K, and L. Both LEDs D, E, and F as well as LEDs J, K, and L are suitable and intended to emit red light (630 nm) perpendicularly (90° plus or minus up to 20°) onto the surfaces c and d of the component 2.

[0028] The red light emitted by subassemblies 8 and 10 first passes through a focusing lens 30, 32 and then a half-mirror 22, 24 before impinging perpendicularly (90° plus or minus up to 20°) on the component surfaces c, d. A black foil shield 26, 28 prevents the occurrence of unwanted secondary or scattered light.

[0029] The half mirrors 22 and 24 are positioned in the device shown at a 45° angle relative to the emission direction of the sub-arrangements 8 and 10 and are suitable and intended to transmit the light emitted by the second illumination arrangement 8, 10 in the direction of the component 2, but to reflect the light reflected in the opposite direction by the component surfaces c and d at a 90° angle relative to the respective emission direction of the sub-arrangements 8 and 10.

[0030] Furthermore, the half mirrors 22, 24 are suitable and intended to reflect the infrared light of the illumination arrangement 4, 6 emerging from the component surfaces c and d in the same way as the red light originating from these directions, which was reflected by the component surfaces c and d.

[0031] A mirror 20 serves the Fig. 1 shown device to direct the optical beam path of the red and infrared light reflected by the half mirror 22 parallel to the red and infrared light reflected by the half mirror 24.

[0032] Further shows Fig. 1 two cameras 12 and 14, which are positioned to capture the red and infrared light originally emitted by the subassemblies 4, 8 or 6, 10, respectively. The capture directions of the two cameras 12 and 14 are each directed toward one of the two visible-light illuminated surfaces c, d of the semiconductor component.

[0033] The Fig. 1 The cameras 12 and 14 shown are suitable for creating image captures based on visible red light as well as for creating image captures based on infrared light. The camera lenses 16 and 18 of the cameras 12 and 14 are each optimized for a wavelength range of 450-670 nm and 1100-1200 nm, respectively. Furthermore, the cameras are designed and arranged to provide a downstream image evaluation system with image captures for inspecting the component, in particular for detecting damage and / or property defects, based on red and infrared light.

[0034] In image evaluation, the decision (ejection, forwarding) regarding the currently examined components is made by means of image processing and / or by comparison with image captures of faultless / undamaged components.

[0035] An advantage of this inspection setup is that two surfaces a, b of component 2 can be inspected for external damage and / or property defects (using image acquisition based on red light), while simultaneously inspecting the interior of component 2 for damage and / or property defects (using image acquisition based on infrared light) without changing the position of the camera sensors. Surfaces c, d can be inspected in the same way after rotating the component by 180° in an inspection plane.

[0036] In Fig. 1a a side view of a removal device for receiving the semiconductor components 2 detached from a substrate 40 is shown.

[0037] A detachment unit (ejection needle or laser) is arranged on the side of a substrate 40 facing away from the examination device 100 and is configured to at least partially detach a semiconductor component 2 from the substrate 40.

[0038] In this illustration, a detachment unit for detaching the semiconductor components 2 provided on the substrate 40 is not shown for reasons of clarity. Likewise, the examination device from Fig. 1 not shown.

[0039] The removal device comprises a receiving unit 60 which is configured to receive the released semiconductor components 2 from the substrate 40 and to turn them by 180° by means of a rotational movement about the X-axis and to transport them to a transfer position for a further receiving unit 62.

[0040] For this purpose, the receiving unit 60 is further configured to be moved along the Z-axis. Furthermore, the receiving unit 60 comprises two or more pickups on its periphery. The further receiving unit 62 is configured to receive the semiconductor components 2 at the transfer position from the receiving unit 60 and to transfer them to an examination position (shown in Fig. 1 ) to promote.

[0041] The transfer position is in the examination plane and can be the same as or different from the examination position. The image recording axes of the cameras 12, 14 in Figure 1 are in the investigation plane.

[0042] The receiving unit 62 is further configured to deposit the semiconductor components 2 in the examination position in an intermediate storage unit 64 after the semiconductor components 2 have been examined. Accordingly, the further receiving device 62 is movable along the Y-axis and the Z-axis, as well as rotatable about the Z-axis. The receiving unit 60 and the further receiving unit 62 are provided here as vacuum grippers.

[0043] Fig. 2 . shows an optical examination device 200. Here, a surface a and a surface c of a semiconductor component 2 with a rectangular plan are each illuminated with infrared light (1200 nm) by a first illumination arrangement 4, 6 and simultaneously with red light (630 nm) by a second illumination arrangement 8, 10.

[0044] The first illumination arrangement 4, 6 consists of two sub-arrays 4 and 6, each of which is formed from LEDs and is located opposite one another with respect to the semiconductor component 2. Sub-array 4 is formed by LEDs A and C, and sub-array 6 is formed by LED B. LEDs A, B, and C are each designed and suitable for emitting infrared light (1200 nm) perpendicular to one of the surfaces a and c of the component 2.

[0045] The second illumination arrangement 8, 10 illuminates surfaces a and c with red light (630 nm). The illumination arrangement 8, 10 consists of two sub-arrays 8 and 10, each of which is formed from LEDs and is located opposite one another with respect to the semiconductor component 2. Sub-array 8 is formed by LED D, and sub-array 10 is formed by LEDs E and F, with LEDs D, E, and F each being suitable and intended to emit red light (630 nm) perpendicular to one of the surfaces c and a of the component 2.

[0046] At least a portion of the infrared light emitted by the illumination arrangement 4, 6 completely penetrates the semiconductor component 2. The infrared light entering the semiconductor component 2 perpendicularly (90° plus or minus up to 20°) at the surfaces a and c thus exits, at least partially, at the respective opposite surfaces c and a.

[0047] The red and infrared light emitted by the illumination arrangements 4, 6, 8, 10 passes in Fig. 2 First, it passes through a focusing lens 30, 32 and then a half-mirror 22, 24 before impinging perpendicularly on the component surfaces c, a. A shield 26, 28 made of black foil prevents the occurrence of unwanted secondary or scattered light.

[0048] The half mirrors 22 and 24 are in the Fig. 2 shown device is positioned at a 45° angle relative to the emission direction of the illumination arrangements 4, 6, 8, 10 and is suitable and intended to transmit the light emitted by the illumination arrangements 4, 6, 8, 10 in the direction of the component 2, but to reflect the light reflected in the opposite direction by the component surfaces a and c at a 90° angle relative to the emission direction of the illumination arrangements 4, 6, 8, 10.

[0049] Furthermore, the half mirrors 22, 24 are suitable and intended to reflect the infrared light of the illumination arrangement 4, 6 emerging perpendicularly from the component surfaces a and c in the same way as the red light originating from these directions, which was previously reflected by the component surfaces a and c.

[0050] The device further features two cameras 12 and 14, each positioned to capture the red or infrared light originally emitted by the subassemblies 4, 10 or 6, 8. The capture directions of the two cameras 12 and 14 are each directed toward one of the two surfaces a, c of the semiconductor component illuminated with visible light.

[0051] The cameras 12 and 14 shown in the device are suitable for creating image captures based on both red light and infrared light. The camera lenses 16 and 18 of the cameras 12 and 14 are each optimized for a wavelength range of 450–670 nm and 1100–1200 nm, respectively. Furthermore, the cameras are designed and arranged to provide a downstream image evaluation system with image captures based on red and infrared light for inspecting the component, in particular for detecting damage and / or property defects.

[0052] An advantage of this inspection setup is that two surfaces a, c of component 2 can be inspected for external damage and / or property defects (using image acquisition based on red light), while simultaneously inspecting the interior of the component for damage and / or property defects (using image acquisition based on infrared light) without changing the position of the camera sensors. Surfaces b, d can be inspected in the same way after rotating the component by 90°.

[0053] The Fig. 1 and 2 The optical beam paths shown schematically in dotted lines are used exclusively by red light, the optical beam paths shown by dashed lines are used exclusively by infrared light and the optical beam paths shown by dotted lines are used by both red and infrared light.

[0054] The semiconductor component 2 is held on a holder. The holder is part of a first turning device, which has the shape of a star or wheel. This first turning device has several, for example eight, holders on its circumference and is rotatable about a rotation axis. Each of the holders is designed to hold a semiconductor component by means of negative pressure. The first turning device interacts with a second turning device of essentially the same construction and rotatable about a rotation axis, wherein the semiconductor component 2 can be transferred from the first turning device to the second turning device at a transfer point. The second turning device can also be an optical inspection device, as in Figure 1 shown, include.

[0055] The first and second turning devices can also be arranged orthogonally to each other.

[0056] The variants of the device described above, as well as their construction and operating aspects, serve only to provide a better understanding of the structure, functionality, and properties; they do not limit the disclosure to the exemplary embodiments. The figures are partly schematic, with essential properties and effects being shown in some cases significantly enlarged in order to better understand the functions, operating principles, technical

[0057] To clarify embodiments and features. The invention is defined by the claims.

Claims

1. An optical examination device (100), suitable and intended for detection of features of a rectangular semiconductor component (2) detached from a substrate (40) and positioned in an examination position by an extraction device, comprising: - an extraction device, which comprises a first receiving unit (60) with two or more pick-ups arranged at their circumference, wherein the first receiving unit (60) is configured to be rotated around an x-axis and moved along a y-axis; and wherein the receiving unit (60) is configured to receive a single rectangular semiconductor component (2) detached from a substrate (40) and turn it by means of a rotational movement by 180° around the x-axis and transport it to a transfer position; wherein a second receiving unit (62) is configured to take over the semiconductor component (2) from the first receiving unit (60) at the transfer position and to convey it into the examination position; - a first illumination arrangement (4, 6), a second illumination arrangement (8, 10) and a first camera (12) and a second camera (14); wherein the both cameras (12, 14) are configured and arranged to provide image indents on the basis of visible or infrared light; and wherein the first camera (12) and the second camera (14) are configured to be pointed at different surfaces respectively of the semiconductor component (2) located in the examination position, and the first illumination arrangement (4, 6) is configured to consist of one or more light emitting diode / diodes, which emit infrared light perpendicularly onto two surfaces respectively facing away from the imaging device (12, 14) and adjoining one another perpendicularly of the semiconductor component (2) located in the examination position, and wherein the infrared light emitted to the surfaces is configured to fully penetrate the semiconductor component (2) at least proportionally, and wherein the second illumination arrangement (8, 10) is configured to emit visible light with multiple light emitting diodes perpendicularly onto two surfaces respectively facing the cameras (12, 14) and adjoining one another perpendicularly of the semiconductor component (2) located in the examination position, which surfaces lie respectively opposite the surfaces onto which infrared light from the first illumination arrangement (4, 6) is directed, and wherein the first illumination arrangement (4, 6) and the second illumination arrangement (8, 10) are configured to illuminate the semiconductor component (2) simultaneously, and wherein the second illumination arrangement (8, 10) is further configured to emit the visible light such that it is guided by optically effective elements (22, 24), the optically effective elements being arranged to have a predetermined degree of transmission of visible light in an emission direction of the second illumination arrangement (8, 10) and a predetermined degree of reflection of visible and infrared light from the respective 180° opposite direction, wherein the optically effective elements (22, 24) are further arranged to reflect the visible light and the infrared light respectively in a direction unequal to the emission directions of the second illumination arrangement (8, 10) and the directions 180° opposite thereto, and wherein the first camera (12) and the second camera (14) are each configured and arranged to detect both the light spectrum emitted by the first illumination arrangement (4, 6) and the light spectrum emitted by the second illumination arrangement (8, 10), and wherein the first camera (12) and the second camera (14) are each configured to provide respectively for downstream evaluation on the basis of both the visible and the infrared light spectrum a separate image capture in each case for determining property defects or damage of the semiconductor component (2), wherein the cameras (12, 14) are each configured to use the same optical beam path, at least in sections, to record the visible light reflected by the component (2) and to record the infrared light penetrating the component (2).

2. An optical examination device (200), suitable and intended for detection of features of a rectangular semiconductor component (2) detached from a substrate and held by a first turning device, comprising: - a wheel-shaped turning device, rotatable around a rotation axis, which has multiple pick-ups at its circumference, each configured to hold a rectangular semiconductor component (2) by means of a negative pressure and to transfer it at a transfer point to a second turning device that is essentially identical to the first turning device and can also rotate about an axis of rotation; - a first illumination arrangement (4, 6), a second illumination arrangement (8, 10) and a first camera (12) and a second camera (14), wherein both cameras (12, 14) are configured and arranged to provide image captures on the basis of visible or infrared light, and wherein the first illumination arrangement (4, 6) consists of multiple light emitting diodes configured to emit infrared light perpendicularly onto two opposing surfaces respectively facing away from the imaging devices (12, 14) of the semiconductor component (2) held by the pick-up, wherein the infrared light fully penetrates the semiconductor component (2) at least proportionally, and the second illumination arrangement (8, 10) consists of multiple light emitting diodes configured to emit visible light perpendicularly onto two opposing surfaces respectively facing the imaging devices (12, 14) of the semiconductor component (2) held by the pick-up, and wherein the first illumination arrangement (4, 6) and the second illumination arrangement (8, 10) are configured to illuminate the semiconductor component (2) simultaneously, and wherein the illumination arrangements (4, 6, 8, 10) are further configured to emit the visible and the infrared light such that it is guided through optically effective elements (22, 24), the optically effective elements (22, 24) being arranged to have a predetermined degree of transmission of visible and infrared light in a common emission direction in each case of the first and second illumination arrangement (4, 6, 8, 10) and a predetermined degree of reflection of visible and infrared light from the respective 180° opposite direction, the optically effective elements (22, 24) being further arranged to reflect the visible light and the infrared light respectively in a direction unequal to the emission directions of the second illumination arrangement (8, 10) and the directions 180° opposite thereto, and wherein the both cameras (12, 14) are each configured and arranged to be directed towards one of the surfaces of the semiconductor component (2) on which light is emitted through the first and second illumination arrangements (4, 6, 8, 10), and wherein the first camera (12) and the second camera (14) are each configured and arranged to detect both the light spectrum emitted by the first illumination arrangement (4, 6) and the light spectrum emitted by the second illumination arrangement (8, 10), and wherein the first camera (12) and the second camera (14) are each configured and arranged to provide respectively for downstream evaluation on the basis of both the visible and the infrared light spectrum a separate image capture in each case for determining property defects or damage of the semiconductor component (2), and wherein the cameras (12, 14) are each configured and arranged to use the same optical beam path, at least in sections, to record the visible light reflected by the component (2) and to record the infrared light penetrating the component (2).

3. The optical examination device (100, 200) according to one of the previous claims, wherein the optically effective elements (22, 24) comprise at least one half mirror, wherein the half mirror (22, 24) is arranged at an angle of approximately 45° to the optical axis of the imaging device (12, 14) and serves to couple light of the first and / or second illumination arrangement (4, 6, 8, 10) optically and to direct it onto the component (2), and wherein the half mirror (22, 24) is suitable and arranged to direct the visible light reflected by the component (2) and the infrared light penetrating the component (2) onto the imaging devices (12, 14).

4. The optical examination device (100, 200) according to any one of the previous claims, wherein the first illumination arrangement (4, 6) and / or the second illumination arrangement (8, 10) and / or a single or a plurality of optically active elements are configured and arranged to be respectively oriented and / or focused independently of the others.

5. A method for the optical examination of semiconductor components (2) with a device according to claim 1 or a device according to claim 2, comprising the following method steps: - illumination of two different surfaces of a semiconductor component (2) held by a receiving unit or a pick-up with infrared light, which fully penetrates the semiconductor component (2) at least proportionally, - illumination of two different surfaces of the semiconductor component (2) held by the receiving unit or the pick-up with visible light, wherein the surfaces illuminated with visible light lie respectively opposite the surfaces illuminated with infrared light, - detection of the visible light reflected by the two surfaces of the component (2) held by a receiving unit or a pick-up that are illuminated by visible light and of the infrared light penetrating the component (2) from the two surfaces illuminated by infrared light by at least one imaging device (12, 14), which uses at least partially the same optical beam path for this, - production of at least two image captures respectively of the surfaces of the component illuminated by visible light, wherein one of the two image captures is produced on the basis of the visible light reflected by the component surface and one is produced on the basis of the infrared light penetrating the component (2), - examination of the component for defectiveness by downstream image evaluation by means of the image captures.