METHOD FOR FORMING HERMETIC SEALS IN MEMS DEVICES
DE602018091621T2Active Publication Date: 2026-06-03ELBIT SYSTEMS OF AMERICA LLC
Patent Information
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- ELBIT SYSTEMS OF AMERICA LLC
- Filing Date
- 2018-11-22
- Publication Date
- 2026-06-03
AI Technical Summary
Technical Problem
Conventional wafer construction processes for MEMS devices damage adhesion metals, leading to gaps or scratches that prevent proper hermetic sealing, and require double-sided handling, which complicates the bonding process.
Method used
A method involving resist spinning, pathway formation, depression etching, and selective adhesion metal and indium deposition to create self-aligned depressions for low-temperature bonding, ensuring adhesion metals are not damaged during handling and allowing for a hermetic seal with reduced seal area.
Benefits of technology
Enables double-sided wafer processing without damaging adhesion metals, forming a robust hermetic seal with reduced seal area and multiple shear points, enhancing bond strength and reducing seal line width.
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