METHOD FOR FORMING HERMETIC SEALS IN MEMS DEVICES
DE602018091621T2Active Publication Date: 2026-06-03ELBIT SYSTEMS OF AMERICA LLC
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- DE602018091621
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2017-12-01
- Filing Date
- 2018-11-22
- Publication Date
- 2026-06-03
- Estimated Expiration
- 2038-11-22
AI Technical Summary
Technical Problem
Conventional wafer construction processes for MEMS devices damage adhesion metals, leading to gaps or scratches that prevent proper hermetic sealing, and require double-sided handling, which complicates the bonding process.
Method used
A method involving resist spinning, pathway formation, depression etching, and selective adhesion metal and indium deposition to create self-aligned depressions for low-temperature bonding, ensuring adhesion metals are not damaged during handling and allowing for a hermetic seal with reduced seal area.
Benefits of technology
Enables double-sided wafer processing without damaging adhesion metals, forming a robust hermetic seal with reduced seal area and multiple shear points, enhancing bond strength and reducing seal line width.
✦ Generated by Eureka AI based on patent content.
Need to check novelty before this filing date? Find Prior Art
No text content released.